WO2018079494A1 - Fluid treatment method and fluid treatment device - Google Patents

Fluid treatment method and fluid treatment device Download PDF

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Publication number
WO2018079494A1
WO2018079494A1 PCT/JP2017/038207 JP2017038207W WO2018079494A1 WO 2018079494 A1 WO2018079494 A1 WO 2018079494A1 JP 2017038207 W JP2017038207 W JP 2017038207W WO 2018079494 A1 WO2018079494 A1 WO 2018079494A1
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WO
WIPO (PCT)
Prior art keywords
liquid
substrate
etching
film
wafer
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PCT/JP2017/038207
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French (fr)
Japanese (ja)
Inventor
誠也 藤本
一樹 小佐井
Original Assignee
東京エレクトロン株式会社
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Priority to JP2018547659A priority Critical patent/JP6755962B2/en
Publication of WO2018079494A1 publication Critical patent/WO2018079494A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a liquid processing method and a liquid processing apparatus for flattening a film formed on a substrate.
  • a thin film such as an oxide film or a nitride film is formed as an insulating film on the surface of a semiconductor wafer to be processed (hereinafter simply referred to as “wafer”).
  • Chemical vapor deposition (CVD) or the like is widely used as a method for forming this thin film.
  • the thickness of the thin film at the peripheral edge of the wafer may be larger than the thickness of the thin film at the central portion, and the thin film may be formed in a bowl shape as a whole.
  • Such a thin film having a non-uniform film thickness causes various problems. For example, when a contact hole is formed in the thin film, the diameter of the contact hole varies and the product yield may decrease.
  • Patent Document 1 discloses a technique of supplying a treatment liquid to a bowl-shaped film and etching the film flatly.
  • Patent Document 1 it is not easy to etch the outer peripheral portion of the mortar-shaped film by a desired amount with the treatment liquid and flatten the entire film with high accuracy. Thus, further improvement has been required in order to accurately form a flat film over the entire substrate.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a liquid processing method and a liquid processing apparatus capable of forming a flat film on a substrate with high accuracy.
  • One embodiment of the present invention is a liquid processing method for etching an etchant by supplying an etchant to a substrate having a thicker outer peripheral film than the central film, and is formed on the outer peripheral part while rotating the substrate.
  • the etching solution is supplied to a film thicker than the central portion, and an etching inhibitor solution that inhibits etching of the film by the etching solution is supplied to the center side of the substrate from the position where the etching solution is supplied to etch the outer peripheral portion film.
  • the present invention relates to a liquid processing method comprising: a first step; and a second step of supplying an etching solution to a rotating substrate and etching to a preset film thickness after the first step.
  • Another aspect of the present invention is a liquid processing apparatus that etches a film by supplying an etching liquid to a substrate having a thicker outer peripheral film than the central film, and a substrate holding unit that rotatably holds the substrate
  • a rotation mechanism that rotates the substrate holding unit, a liquid supply mechanism that supplies a liquid to a film formed on the substrate held by the substrate holding unit, and a controller that controls at least the liquid supply mechanism.
  • a first step of etching the film after the first step, a second step of etching a rotating substrate to a thickness that is set in advance by supplying an etching liquid to a liquid processing apparatus for performing.
  • a flat film can be accurately formed on a substrate.
  • FIG. 1 is a conceptual diagram showing an outline of a configuration of a liquid processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a graph conceptually showing an example of the relationship between the horizontal position and the thickness of the wafer to be processed.
  • FIG. 3 is a flowchart showing an example of the liquid processing method.
  • FIG. 4 is a conceptual diagram showing an example of the arrangement relationship when the first liquid discharge nozzle and the wafer are viewed from the side.
  • FIG. 5 is a conceptual diagram showing an example of the arrangement relationship when the first liquid discharge nozzle and the wafer are viewed from above.
  • FIG. 1 is a conceptual diagram showing an outline of a configuration of a liquid processing apparatus 100 according to an embodiment of the present invention.
  • the liquid processing apparatus 100 includes a substrate holding unit 1 that horizontally and rotatably holds a wafer W on which an oxide film 50 is formed, a rotation mechanism 2 that includes a motor that rotates the substrate holding unit 1, and a substrate.
  • a cup 3 provided so as to surround.
  • the substrate holding unit 1 is connected to a rotating shaft 2a of the rotating mechanism 2 and rotates together with the rotating shaft 2a, three support pins 12a and three holding pins 12b attached to the peripheral portion of the rotating plate 11, and Have Each holding pin 12b has a retracted position outside the rotating plate 11 and a holding position for holding the wafer W so as not to hinder delivery of the wafer W between the transfer arm (not shown) and the substrate holding unit 1. It is possible to rotate between. After each support pin 12b receives the wafer W with each holding pin 12b placed in the retracted position, the holding pin 12b is rotated and placed in the holding position, so that the wafer W is placed in the holding position. It is held by the holding pin 12b.
  • maintenance part 1 is raised / lowered by the raising / lowering mechanism which is not shown in figure.
  • the liquid supply mechanism 4 has a first liquid discharge nozzle 21 and a second liquid discharge nozzle 22 that are movable in the horizontal direction.
  • the first liquid discharge nozzle 21 can discharge a processing liquid (for example, dilute hydrofluoric acid (DHF)) for dissolving the oxide film 50 and performing an etching process.
  • the second liquid discharge nozzle 22 can selectively discharge a treatment liquid (for example, dilute hydrofluoric acid) and a rinse liquid (for example, pure water (DIW)).
  • a processing liquid for example, dilute hydrofluoric acid (DHF)
  • DIW pure water
  • a first liquid supply line 23 is connected to the first liquid discharge nozzle 21, and a second liquid supply line 28 is connected to the second liquid discharge nozzle 22.
  • a processing liquid supply line 26 is connected to the first liquid supply line 23 via a valve 24.
  • a treatment liquid supply line 31 is connected to the second liquid supply line 28 via a valve 29, and a rinse liquid supply line 32 is connected via a valve 30.
  • each of the processing liquid supply line 26, the processing liquid supply line 31, and the rinsing liquid supply line 32 is provided with a pump, a flow rate control device, and the like for sending out the liquid.
  • the first liquid discharge nozzle 21 provided in this way discharges the processing liquid toward the oxide film 50 on the outer peripheral portion of the wafer W in a first process (see reference numeral “S1” in FIG. 3) described later.
  • a first processing liquid discharge nozzle Used as a first processing liquid discharge nozzle.
  • the second liquid discharge nozzle 22 is used as a rinse liquid discharge nozzle that discharges a rinsing liquid toward the oxide film 50 at the center of the wafer W in the first process described later.
  • 3 is used as a second processing liquid discharge nozzle that discharges the processing liquid toward the oxide film 50 at the center of the wafer W.
  • the first liquid discharge nozzle 21 is relatively disposed on the outer peripheral side of the wafer W, while the second liquid discharge nozzle 22 is relatively disposed on the inner side of the wafer W.
  • the inside here refers to the rotation axis side of the wafer W, and means the side close to the rotation axis 2a in the liquid processing apparatus 100 shown in FIG.
  • the outer peripheral side means a side away from the rotation axis of the wafer W.
  • the first liquid discharge nozzle 21 has a smaller diameter than the second liquid discharge nozzle 22 and is designed to have a relatively small discharge flow rate.
  • the diameter of the second liquid discharge nozzle 22 is set to about 1/4 inch
  • the diameter of the first liquid discharge nozzle 21 is set to 1 ⁇ 2 of the diameter of the second liquid discharge nozzle 22 (that is, 1 / It can also be set to about 8 inches. Since the first liquid discharge nozzle 21 having a small diameter discharges a small flow rate of the processing liquid, it is possible to accurately supply a desired amount of the processing liquid to the oxide film 50 of the wafer W and to consume the processing liquid. Can be suppressed.
  • the first liquid discharge nozzle 21 is provided to be inclined with respect to the extending direction of the wafer W.
  • the processing liquid discharged from the first liquid discharge nozzle 21 is discharged toward the outer peripheral side of the wafer W. Thereby, when the processing liquid lands on the oxide film 50 of the wafer W, the rebound of the processing liquid to the inner side of the wafer W can be suppressed.
  • the processing liquid discharged from the first liquid discharge nozzle 21 is discharged in a direction that is non-perpendicular to the rotation direction of the wafer W and is the same as the rotation direction of the wafer W with respect to the rotation direction of the wafer W.
  • the second liquid discharge nozzle 22 is arranged perpendicularly to the extending direction of the wafer W, and the processing liquid and the rinse liquid discharged from the second liquid discharge nozzle 22 are the oxide film 50 of the wafer W. Fly vertically toward However, the second liquid discharge nozzle 22 may be provided to be inclined with respect to the extending direction of the wafer W, and even if the processing liquid and the rinse liquid are discharged from the second liquid discharge nozzle 22 in the non-vertical direction. Good.
  • the first liquid discharge nozzle 21 is held by the first nozzle holder 21a, and the second liquid discharge nozzle 22 is held by the second nozzle holder 22a.
  • a driving mechanism 48 is connected to the first nozzle holder 21a, and a driving mechanism 52 is connected to the second nozzle holder 22a.
  • the first liquid discharge nozzle 21 and the first nozzle holder 21 a are moved by the drive mechanism 48, and the second liquid discharge nozzle 22 and the second nozzle holder 22 a are moved by the drive mechanism 52.
  • the liquid supply mechanism 4 described above is merely an example.
  • the liquid discharge nozzle 22 described above is commonly used as a rinse liquid discharge nozzle and a treatment liquid discharge nozzle, but instead of the second liquid discharge nozzle 22, a process connected to the process liquid supply line 31 via a valve 29.
  • the liquid discharge nozzle and the rinse liquid discharge nozzle connected to the rinse liquid supply line 32 via the valve 30 may be provided separately.
  • the cup 3 receives the processing liquid and the rinsing liquid flying from the rotating wafer W under the influence of the centrifugal force and discharges it to the outside.
  • An exhaust passage 3a and drain pipes 3b and 3c are provided at the bottom of the cup 3, and the exhaust passage 3a communicates with a suction side of an exhaust pump (not shown).
  • Each component of the liquid processing apparatus 100 is connected to a controller 101 including a computer (computer) such as a CPU and a memory, and is controlled by the controller 101.
  • a computer such as a CPU and a memory
  • the valve 24, the valve 29, the valve 30, the drive mechanism 48, the drive mechanism 52, and the rotation mechanism 2 are controlled by the controller 101.
  • the controller 101 is also connected with a user interface 102 and a storage unit 103.
  • the user interface 102 includes a keyboard for an administrator to input a command to manage each component of the liquid processing apparatus 100, a display for displaying the operating status of each component of the liquid processing apparatus 100, and the like. Is included.
  • the storage unit 103 is configured by an arbitrary non-transitory recording medium readable by a computer, and can be configured by, for example, a CD-ROM, a hard disk, a flexible disk, or a nonvolatile memory.
  • This storage unit 103 is necessary for control of each component and a recipe in which a control program and processing condition data for realizing various processes executed by the liquid processing apparatus 100 are realized by the control of the controller 101. Other information is stored. Accordingly, for example, the controller 101 can call and execute a corresponding recipe from the storage unit 103 in response to an instruction from the administrator via the user interface 102.
  • the storage unit 103 of the present embodiment also stores a program for causing the controller 101 to execute various procedures of the liquid processing method described later.
  • FIG. 2 is a graph conceptually showing an example of the relationship between the horizontal position and thickness of the wafer W to be processed.
  • FIG. 2 is based on a cross section of the wafer W, the horizontal axis indicates the “horizontal position” indicating the distance in the horizontal direction from the rotation axis of the wafer W, and the vertical axis indicates the height from the reference horizontal plane. “Wafer thickness” representing the distance in the direction is shown. Therefore, the position of the wafer W on the rotation axis is indicated by “0” on the horizontal axis of FIG.
  • the thickness of the wafer W is linearly changed, but FIG. 2 is only a simplified graph for ease of understanding, and the actual thickness of the wafer W is Can change more irregularly.
  • the wafer W to be processed by the liquid processing method and the liquid processing apparatus 100 of the present embodiment has a relatively larger thickness at the outer peripheral portion than at the central portion. More specifically, the thickness of the oxide film 50 formed on the wafer W is larger at the outer peripheral portion than at the central portion. Therefore, as shown in FIG. 2, the wafer W has substantially the same thickness within a certain range in the horizontal direction from the position (see “0” on the horizontal axis in FIG. 2) through which the rotation axis that is the center of the wafer W passes. On the other hand, at the position near the outermost peripheral portion of the wafer W (see the vicinity of the left and right end portions of the horizontal axis in FIG. 2), the thickness of the wafer W increases rapidly.
  • the oxide film 50 of the wafer W In order to flatten the oxide film 50 of the wafer W, in the liquid processing method described below, first, a portion of the outer peripheral portion of the oxide film 50 that rises from the inner side (see reference sign “Q” in FIG. 2). ) Is etched by the treatment liquid, and the difference in thickness between the outer peripheral portion and the central portion of the oxide film 50 is reduced. Thereafter, the entire oxide film 50 including the inner portion and the outer peripheral portion is etched by the processing liquid, and an etching process is performed so that the entire oxide film 50 has a desired thickness. By performing the etching process in two stages as described above, the thickness difference between the outer peripheral portion and the central portion can be effectively reduced, and the entire oxide film 50 can be flattened with high accuracy.
  • the liquid processing method including the following first step and second step is performed by the controller 101 controlling each part as appropriate.
  • the controller 101 acquires data related to the surface profile of the oxide film 50 of the wafer W (hereinafter also referred to as “surface profile data”), and controls the opening / closing of the valve 24, the valve 29, and the valve 30 based on the data.
  • the controller 101 can acquire surface profile data by an arbitrary method.
  • the controller 101 may acquire from the external device the surface profile data acquired by measuring the surface profile of the oxide film 50 before the wafer W is loaded into the liquid processing apparatus 100.
  • the controller 101 may acquire the surface profile data from the measurement device by measuring the surface profile of the oxide film 50 of the wafer W held on the substrate holding unit 1 using a measurement device (not shown).
  • FIG. 3 is a flowchart showing an example of a liquid processing method.
  • the processing liquid is supplied to a substrate in which the thickness of the oxide film 50 formed in the outer peripheral portion is larger than the thickness of the oxide film 50 formed in the central portion. Etching is performed.
  • a first step S ⁇ b> 1 for adjusting the thickness of the oxide film 50 on the outer peripheral portion of the wafer W is performed, and thereafter, the first thickness for adjusting the entire thickness of the oxide film 50 on the wafer W is adjusted.
  • Step S2 of 2 is performed.
  • the processing liquid is supplied to the oxide film 50 thicker than the central portion formed on the outer peripheral portion, and the center of the wafer W is more than the position where the processing liquid is supplied.
  • the rinsing liquid that inhibits the etching of the oxide film 50 by the treatment liquid is supplied to etch the outer peripheral oxide film 50.
  • the processing liquid is supplied to the rotating wafer W, and etching is performed to a preset film thickness.
  • the rinsing liquid is supplied from the second liquid discharge nozzle 22.
  • the first liquid discharge nozzle 21 is positioned at a position on the oxide film 50 on the center side of the wafer W, rather than on the oxide film 50 on the outer peripheral side of the wafer W to which the processing liquid discharged from the first liquid discharge nozzle 21 is supplied.
  • the rinse liquid discharged from the second liquid discharge nozzle 22 is supplied. That is, in the first step S1, the landing position of the rinse liquid is closer to the center side of the wafer W than the landing position of the processing liquid.
  • the etching of the oxide film 50 on the outer peripheral side of the wafer W can be advanced by the processing liquid.
  • the first step S1 only the oxide film 50 on the outer peripheral side of the wafer W is intensively etched.
  • the oxide film 50 inside the wafer W can be protected by the rinse liquid. That is, when supplying the processing liquid to the outer peripheral portion of the wafer W (particularly the position in the vicinity of the outermost peripheral portion), if the rinsing liquid is not supplied to the center side of the processing liquid supply position on the wafer W, it will land on the wafer W.
  • the processed liquid spreads to the center side, and the center side portion of the wafer W which is not originally desired to be etched may be etched.
  • the central side portion of the wafer W is covered with the rinsing liquid and protected from the processing liquid. be able to.
  • the first step S1 is performed by starting the supply of the treatment liquid to the oxide film 50 after the supply of the rinse liquid to the oxide film 50 is started. That is, when the liquid processing method shown in FIG. 3 starts, the supply of the rinsing liquid from the second liquid discharge nozzle 22 to the oxide film 50 is started (see S11 in FIG. 3), and then the first liquid discharge nozzle 21 is started. The supply of the processing liquid from is started (S12). Specifically, before the above-described step S11, all of the valve 24, the valve 29, and the valve 30 shown in FIG. 1 are closed.
  • step S ⁇ b> 11 is started, and the rinse liquid is discharged from the second liquid discharge nozzle 22 toward the oxide film 50 at the center of the wafer W.
  • the rinse liquid supplied onto the oxide film 50 spreads on the outer peripheral side as the wafer W rotates, and covers the entire surface of the oxide film 50.
  • step S12 is started by opening the valve 24 under the control of the controller 101, and the processing liquid is discharged from the first liquid discharge nozzle 21 toward the oxide film 50 on the outer peripheral side of the wafer W.
  • the supply of the processing liquid in step S12 is started after the rinse liquid discharged from the second liquid discharge nozzle 22 covers a sufficient range on the oxide film 50 (more preferably, at least from the first liquid discharge nozzle 21). It is preferably performed after the rinsing liquid covers the area inside the landing point of the discharged processing liquid. Thereby, since the processing liquid is supplied in a state where the oxide film 50 inside the wafer W is protected by the rinse liquid, it is possible to suppress the influence of the rebound of the processing liquid.
  • the treatment liquid supplied to the oxide film 50 in the first step S1 is discharged from the first liquid discharge nozzle 21 so as to satisfy the following conditions 1 and 2.
  • FIG. 4 is a conceptual diagram showing an example of an arrangement relationship when the first liquid discharge nozzle 21 and the wafer W are viewed from the side.
  • the processing liquid discharged from the first liquid discharge nozzle 21 in the first step S1 flies toward the outer peripheral side of the wafer W along the discharge direction indicated by the reference numeral “D1”, and in the outer peripheral portion of the wafer W. Land on the oxide film 50 (condition 1).
  • the acute angle ⁇ formed by the discharge direction D1 of the processing liquid from the first liquid discharge nozzle 21 in the first step S1 with respect to the direction D2 in which the wafer W extends is “20 ° ⁇ ⁇ ⁇ 70. It is preferable to satisfy “°”. When the angle ⁇ is within the range, it is possible to suppress the splash of the processing liquid to the inside of the wafer W particularly effectively.
  • FIG. 5 is a conceptual diagram showing an arrangement relation example when the first liquid discharge nozzle 21 and the wafer W are viewed from above.
  • the processing liquid supplied from the first liquid discharge nozzle 21 to the oxide film 50 in the first step S ⁇ b> 1 flies in the same direction as the rotation direction R of the wafer W with respect to the rotation direction R of the wafer W, and the oxide film 50. Land on top (condition 2).
  • the direction of the projection traveling path P formed by projecting the path of the processing liquid onto the wafer W and the intersection of the extension line PE of the projection traveling path P and the outermost peripheral portion of the wafer W.
  • the acute angle ⁇ formed by the tangential direction T of the wafer W in C preferably satisfies “40 ° ⁇ ⁇ ⁇ 80 °”.
  • the angle ⁇ is within the range, it is possible to particularly effectively suppress the rebound of the treatment liquid on the oxide film 50 and the spread of the treatment liquid on the oxide film 50 in an unintended direction.
  • the supply of the processing liquid and the rinsing liquid in the first step S1 shown in FIG. 3 is continued until the thickness of the oxide film 50 on the outer peripheral portion of the wafer W becomes the same as that of the central portion. Then, when the thickness of the oxide film 50 on the outer peripheral portion of the wafer W reaches the same thickness as the central portion, the supply of the processing liquid from the first liquid discharge nozzle 21 is stopped (S13), and then the second liquid The supply of the rinse liquid from the discharge nozzle 22 is stopped (S14). Specifically, the valve 24 and the valve 30 are closed under the control of the controller 101, whereby the treatment liquid is discharged from the first liquid discharge nozzle 21 and the rinse liquid is discharged from the second liquid discharge nozzle 22. It can be stopped.
  • the processing liquid is supplied from the second liquid discharge nozzle 22 to the oxide film 50 of the rotating wafer W. That is, immediately after the above-described step S14, the valve 29 is opened under the control of the controller 101, and supply of the processing liquid from the second liquid discharge nozzle 22 to the oxide film 50 is started (S15). Then, the supply of the processing liquid from the second liquid discharge nozzle 22 is continued until the thickness of the oxide film 50 over the entire surface side F1 of the wafer W reaches a preset thickness.
  • the etching of the oxide film 50 is performed over the entire wafer W, so that the processing liquid covers the entire surface of the oxide film 50 from the second liquid discharge nozzle 22 onto the oxide film 50.
  • Treatment liquid is supplied. Therefore, the second liquid discharge nozzle 22 and the second nozzle holder 22a are disposed on or near the rotation axis A of the wafer W with respect to the horizontal direction, and the process discharged from the second liquid discharge nozzle 22 is performed. The liquid is landed at a position on the rotation axis A or in the vicinity of the rotation axis A in the oxide film 50.
  • the second liquid discharge nozzle 22 is positioned at a position on the oxide film 50 slightly away from the rotation axis A in consideration of the spread when the processing liquid is landed. It is preferable to land the treatment liquid. Note that when the processing liquid from the second liquid discharge nozzle 22 is landed on the center of the wafer W through which the rotation axis A passes, fresh processing liquid is always supplied to a place where the centrifugal force does not act, and at the center of the wafer W. Since this etching advances more than the etching of other portions, it is not preferable from the viewpoint of uniformly etching the entire oxide film 50.
  • the processing liquid is not supplied to the position of the wafer W where the processing liquid is supplied in the first step S1, and the processing liquid is supplied in the first step S1.
  • the processing liquid is supplied to the center side of the wafer W from the above position.
  • the supply amount per unit time of the processing liquid from the second liquid discharge nozzle 22 in the second step S2 to the oxide film 50 is the amount of the processing liquid from the first liquid discharge nozzle 21 in the first step S1. It is larger than the supply amount per unit time to the oxide film 50. Further, the rotational speed of the wafer W in the second step S2 is faster than the rotational speed of the wafer W in the first step S1.
  • the first supply amount that is relatively large with respect to the wafer W that rotates at a relatively low first rotation speed for example, 200 rpm (revolution per minute)
  • a relatively low first rotation speed for example, 200 rpm (revolution per minute)
  • a relatively small second supply amount for example, 500 ml / min
  • a relatively low second rotation speed for example, 200 rpm
  • the rinsing liquid can be supplied from the second liquid discharge nozzle 22, and a relatively small third supply amount (for example, 400 ml / min) can be supplied from the first liquid discharge nozzle 21. .
  • a relatively large amount of the fourth supply is supplied to the wafer W rotating at a third rotation speed (for example, 750 rpm) which is higher than the above-described second rotation speed.
  • the specific rotation speed of the wafer W between the above-described steps S12 to S13 is preferably set according to the profile of the oxide film 50 on the outer peripheral portion of the wafer W. That is, in step S12 to step S13, the rinsing liquid supplied onto the wafer W receives a centrifugal force and spreads toward the outer peripheral portion of the wafer W. The magnitude of the centrifugal force acting on the rinsing liquid is the rotation of the wafer W. Varies with speed.
  • the state of the boundary between the rinsing liquid and the processing liquid on the wafer W changes depending on the magnitude of the centrifugal force received by the rinsing liquid, and as the rinsing liquid receives a larger centrifugal force, the boundary liquid is supplied to the outer peripheral portion of the wafer W.
  • the etching action of the treatment liquid is hindered by the rinse liquid. Therefore, as the rotational speed of the wafer W increases, the influence of the rinsing liquid on the outer periphery of the wafer W increases, and the change in the etching amount in the vicinity of the boundary between the processing liquid and the rinsing liquid becomes gradual.
  • the etching profile for forms a gentle angle.
  • the slower the rotation speed of the wafer W the smaller the influence of the rinsing liquid on the outer periphery of the wafer W, and the change in the etching amount in the vicinity of the boundary between the processing liquid and the rinsing liquid becomes abrupt.
  • the etching profile for forms a steep angle. Therefore, in the process between step S12 and step S13, considering such etching characteristics, a rotation speed suitable for etching the oxide film 50 on the outer peripheral portion of the wafer W to the same thickness as the oxide film 50 in the central portion. Thus, it is preferable that the wafer W is rotated.
  • step S14 and step S15 described above almost simultaneously, the liquid discharged from the second liquid discharge nozzle 22 can be switched from the rinse liquid to the processing liquid without interruption.
  • steps S15 to S16 the rotational speed of the wafer W is gradually decreased from the third speed to the fourth speed (for example, 500 rpm), and the fifth supply amount (for example, a relatively large amount) (for example, By supplying a processing liquid of 1500 ml / min) from the second liquid discharge nozzle 22 to the wafer W, the entire surface of the oxide film 50 can be covered with the processing liquid.
  • the valve 29 is closed under the control of the controller 101, and the supply of the processing liquid from the second liquid discharge nozzle 22 is stopped ( S16). Thereafter, the valve 30 is opened under the control of the controller 101, and the rinse liquid is supplied from the second liquid discharge nozzle 22 to the oxide film 50 (S17). Then, after the processing liquid remaining on the oxide film 50 is washed away by the rinse liquid, the valve 30 is closed under the control of the controller 101, and the rinse liquid is supplied from the second liquid discharge nozzle 22 to the oxide film 50. Stopped (S18).
  • the sixth supply amount (relatively large amount) is supplied to the wafer W rotating at the fifth speed (for example, 1500 rpm) higher than the fourth speed.
  • the entire surface of the oxide film 50 can be covered with the rinse liquid by supplying the rinse liquid of 1500 ml / min) from the second liquid discharge nozzle 22.
  • the wafer W is rotated at a relatively high speed (for example, 1500 ml / min) in a state where the liquid discharge from the first liquid discharge nozzle 21 and the second liquid discharge nozzle 22 is stopped.
  • a relatively high speed for example, 1500 ml / min
  • the spin drying of the wafer W is performed.
  • the oxide film 50 of the wafer W is planarized.
  • the flat oxide film 50 is formed on the wafer W by sequentially performing the first step S1 and the second step S2 described above. It can be formed with high accuracy.
  • the oxide film 50 is etched at an unintended location. Can be effectively prevented, and the rebound and spread of the processing liquid can be suppressed.
  • the inventor measures the etching amount of the oxide film 50 in association with the horizontal position while changing the discharge angle of the processing liquid from the first liquid discharge nozzle 21, and determines the etching amount of the oxide film 50 and the horizontal position.
  • the relationship was evaluated. Specifically, verification 1 in which measurement is performed a plurality of times while changing the discharge angle of the processing liquid within a range that satisfies the above-described condition 1 and condition 2, and a process that does not satisfy the above-described condition 1 and / or condition 2 Verification 2 was performed in which the liquid discharge angle was changed and measurement was performed a plurality of times.
  • processing liquid shift amount The difference from the “position where the liquid landed on the oxide film 50” (hereinafter referred to as “processing liquid shift amount”) was generally within a range of 10 mm (millimeters).
  • the amount of displacement of the processing liquid exceeds 10 mm. In many cases, the displacement of the processing liquid exceeded 20 mm.
  • the surface of the wafer W etched with the processing liquid is hydrophobized.
  • a large amount of processing liquid is supplied, or the rotation speed of the wafer W is set to a high speed. Difficult to do. Therefore, the method of first performing the second step S2 and then performing the first step S1 is not preferable because the etching process in the first step S1 becomes unstable.
  • the method shown in FIG. 3 in which the first step S1 is performed prior to the second step S2 is preferable because the first step S1 and the second step S2 can be performed stably.
  • the wafer W is supplied together with the supply of the processing liquid and / or the rinsing liquid to the front surface side F1 of the wafer W.
  • the processing liquid and / or the rinsing liquid may be supplied to the back surface side F2.
  • the supply of the liquid to the rear surface side F2 of the wafer W is performed in a state where the liquid is already supplied to the front surface side F1 of the wafer W. Thereby, it can prevent effectively that the liquid supplied to the back surface side F2 of the wafer W wraps around to the surface side F1.
  • the rinsing liquid and the processing liquid are supplied to the oxide film 50 on the front surface side F1 of the wafer W, and in the second process, the processing liquid is supplied to the oxide film 50 on the front surface side F1 of the wafer W.
  • the processing liquid and / or the rinsing liquid may be supplied also to the back surface side F2 of the wafer W. In this case, in the state in which the processing liquid in at least one of the first process S1 and the second process S2 is supplied to the front surface side F1 of the wafer W, and / or The supply of the rinse liquid is started.
  • a relatively large amount (for example, 1000 ml / min) of rinsing liquid may be supplied to the back surface side F2 of the wafer W in the first step S1, and a relatively large amount (for example, 1000 ml / min) in the second step S2. ) May be supplied to the oxide film formed on the back surface side F2 of the wafer W.
  • the supply of the processing liquid and / or the rinsing liquid to the back surface side F2 of the wafer W is performed using the nozzles and valves having the same configuration as the nozzles 21 and 22 and the valves 24, 29, and 30 provided on the front surface side F1. And the processing liquid and / or the rinsing liquid can be discharged from the nozzle toward the back surface side F2 of the wafer W.
  • the specific composition of the processing liquid and the rinsing liquid described above is not particularly limited, and a liquid that can remove the film such as the oxide film 50 formed on the substrate such as the wafer W is used as the processing liquid. It is possible to use as the rinsing liquid a liquid that can properly wash away such a processing liquid.
  • the processing liquid discharged from the first liquid discharge nozzle 21 and the processing liquid discharged from the second liquid discharge nozzle 22 may be liquids having the same composition, or liquids having different compositions. It may be.
  • the processing liquid supplied to the back surface side of the wafer W may have the same composition as the processing liquid discharged from the first liquid discharge nozzle 21 and / or the second liquid discharge nozzle 22, or a different composition. There may be.
  • the rinsing liquid supplied to the back side of the wafer W may have the same composition as the rinsing liquid discharged from the second liquid discharge nozzle 22 or a different composition.

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Abstract

Provided are a fluid treatment method and a fluid treatment device with which it is possible to form a flat film on a substrate with good precision. The fluid treatment method includes a first step S1 and a second step S2. In the first step S1, while a substrate (wafer) is rotated, an etching fluid is supplied to a film that is formed at the outer peripheral section and is thicker than at the center part. In the first step S1, an etching prevention fluid for preventing etching of the film by the etching fluid is supplied nearer to the center side of the substrate than the position at which the etching fluid is supplied, and the film in the outer peripheral section is etched. The second step S2 is performed after the first step S1, and in the second step S2, the etching fluid is supplied to the rotating substrate and etching is performed to a preset film thickness.

Description

液処理方法及び液処理装置Liquid processing method and liquid processing apparatus
　本発明は、基板に形成された膜を平坦化する液処理方法及び液処理装置に関する。 The present invention relates to a liquid processing method and a liquid processing apparatus for flattening a film formed on a substrate.
　一般に、半導体デバイスの製造工程では、処理対象の半導体ウエハ（以下、単に「ウエハ」と称する）の表面において酸化膜や窒化膜等の薄膜が絶縁膜として形成されている。この薄膜を形成する方法として化学蒸着法（ＣＶＤ）等が広く用いられている。ウエハの周縁部における薄膜の厚さが中心部における薄膜の厚さよりも大きくなって、薄膜が全体として擂り鉢状に形成されることがある。このような不均一な膜厚を有する薄膜は種々の不具合を招き、例えば薄膜にコンタクトホールを形成する場合には、コンタクトホールの径がばらついて製品歩留まりが低下することがある。 Generally, in a semiconductor device manufacturing process, a thin film such as an oxide film or a nitride film is formed as an insulating film on the surface of a semiconductor wafer to be processed (hereinafter simply referred to as “wafer”). Chemical vapor deposition (CVD) or the like is widely used as a method for forming this thin film. The thickness of the thin film at the peripheral edge of the wafer may be larger than the thickness of the thin film at the central portion, and the thin film may be formed in a bowl shape as a whole. Such a thin film having a non-uniform film thickness causes various problems. For example, when a contact hole is formed in the thin film, the diameter of the contact hole varies and the product yield may decrease.
　特許文献１は、擂り鉢状の膜に対して処理液を供給し、当該膜を平坦にエッチングする技術を開示する。 Patent Document 1 discloses a technique of supplying a treatment liquid to a bowl-shaped film and etching the film flatly.
　しかしながら特許文献１に開示された技術では、擂り鉢状の膜の外周部を処理液により所望量だけエッチングして、膜全体を精度良く平坦にすることは容易ではなかった。このように、基板の全体にわたって平坦な膜を精度良く形成するためには更なる改善が求められていた。 However, with the technique disclosed in Patent Document 1, it is not easy to etch the outer peripheral portion of the mortar-shaped film by a desired amount with the treatment liquid and flatten the entire film with high accuracy. Thus, further improvement has been required in order to accurately form a flat film over the entire substrate.
特開２００７－２６６３０２号公報JP 2007-266302 A
　本発明は上述の事情に鑑みてなされたものであり、平坦な膜を基板に精度良く形成することができる液処理方法及び液処理装置を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a liquid processing method and a liquid processing apparatus capable of forming a flat film on a substrate with high accuracy.
　本発明の一態様は、中心部の膜より外周部の膜が厚い基板に対してエッチング液を供給して当該膜をエッチングする液処理方法であって、基板を回転させながら外周部に形成された中心部より厚い膜にエッチング液を供給するとともにエッチング液が供給される位置よりも基板の中心側にエッチング液による膜のエッチングを阻害するエッチング阻害液を供給して外周部の膜をエッチングする第１の工程と、第１の工程の後に、回転する基板にエッチング液を供給して予め設定された膜厚までエッチングする第２の工程と、を備える液処理方法に関する。 One embodiment of the present invention is a liquid processing method for etching an etchant by supplying an etchant to a substrate having a thicker outer peripheral film than the central film, and is formed on the outer peripheral part while rotating the substrate. The etching solution is supplied to a film thicker than the central portion, and an etching inhibitor solution that inhibits etching of the film by the etching solution is supplied to the center side of the substrate from the position where the etching solution is supplied to etch the outer peripheral portion film. The present invention relates to a liquid processing method comprising: a first step; and a second step of supplying an etching solution to a rotating substrate and etching to a preset film thickness after the first step.
　本発明の他の態様は、中心部の膜より外周部の膜が厚い基板に対してエッチング液を供給して膜をエッチングする液処理装置であって、基板を回転可能に保持する基板保持部と、基板保持部を回転させる回転機構と、基板保持部に保持される基板に形成された膜に液を供給する液供給機構と、少なくとも液供給機構を制御するコントローラと、を備え、コントローラは、基板保持部により保持されて回転する基板の膜に対して液供給機構からエッチング液及びエッチング阻害液を供給する第１の工程であって、基板を回転させながら外周部に形成された中心部より厚い膜にエッチング液を供給するとともにエッチング液が供給される位置よりも基板の中心側にエッチング液による膜のエッチングを阻害するエッチング阻害液を供給して外周部の膜をエッチングする第１の工程と、第１の工程の後に、回転する基板にエッチング液を供給して予め設定された膜厚までエッチングする第２の工程と、を行う液処理装置に関する。 Another aspect of the present invention is a liquid processing apparatus that etches a film by supplying an etching liquid to a substrate having a thicker outer peripheral film than the central film, and a substrate holding unit that rotatably holds the substrate A rotation mechanism that rotates the substrate holding unit, a liquid supply mechanism that supplies a liquid to a film formed on the substrate held by the substrate holding unit, and a controller that controls at least the liquid supply mechanism. A first step of supplying an etching solution and an etching inhibiting solution from a liquid supply mechanism to a film of the substrate held and rotated by the substrate holding unit, and a central portion formed on the outer peripheral portion while rotating the substrate Etching solution is supplied to a thicker film, and an etching inhibitor solution that inhibits etching of the film by the etching solution is supplied to the center side of the substrate from the position where the etching solution is supplied. A first step of etching the film, after the first step, a second step of etching a rotating substrate to a thickness that is set in advance by supplying an etching liquid to a liquid processing apparatus for performing.
　本発明によれば、平坦な膜を基板に精度良く形成することができる。 According to the present invention, a flat film can be accurately formed on a substrate.
図１は、本発明の一実施形態に係る液処理装置の構成の概略を示す概念図である。FIG. 1 is a conceptual diagram showing an outline of a configuration of a liquid processing apparatus according to an embodiment of the present invention. 図２は、処理対象のウエハの水平方向位置と厚みとの関係例を概念的に示すグラフである。FIG. 2 is a graph conceptually showing an example of the relationship between the horizontal position and the thickness of the wafer to be processed. 図３は、液処理方法の一例を示すフローチャートである。FIG. 3 is a flowchart showing an example of the liquid processing method. 図４は、第１の液吐出ノズル及びウエハを側方から見た場合の配置関係例を示す概念図である。FIG. 4 is a conceptual diagram showing an example of the arrangement relationship when the first liquid discharge nozzle and the wafer are viewed from the side. 図５は、第１の液吐出ノズル及びウエハを上方から見た場合の配置関係例を示す概念図である。FIG. 5 is a conceptual diagram showing an example of the arrangement relationship when the first liquid discharge nozzle and the wafer are viewed from above.
　図面を参照して本発明の実施形態について説明する。 Embodiments of the present invention will be described with reference to the drawings.
　以下では、基板としてウエハを使用し、ウエハに形成された酸化膜を処理液により平坦化する液処理方法及び液処理装置に対して本発明を適用する場合を例示する。 Hereinafter, a case where the present invention is applied to a liquid processing method and a liquid processing apparatus in which a wafer is used as a substrate and an oxide film formed on the wafer is planarized with a processing liquid will be exemplified.
［液処理装置の構成］
　図１は、本発明の一実施形態に係る液処理装置１００の構成の概略を示す概念図である。液処理装置１００は、表面に酸化膜５０が形成されたウエハＷを水平に且つ回転可能に保持する基板保持部１と、基板保持部１を回転させるモータによって構成される回転機構２と、基板保持部１に保持されるウエハＷの酸化膜５０に処理液（特にエッチング液）及びリンス液（すなわちエッチング阻害液）を供給する液供給機構４と、基板保持部１に保持されたウエハＷを囲繞するように設けられたカップ３とを備える。 [Configuration of liquid processing equipment]
FIG. 1 is a conceptual diagram showing an outline of a configuration of a liquid processing apparatus 100 according to an embodiment of the present invention. The liquid processing apparatus 100 includes a substrate holding unit 1 that horizontally and rotatably holds a wafer W on which an oxide film 50 is formed, a rotation mechanism 2 that includes a motor that rotates the substrate holding unit 1, and a substrate. A liquid supply mechanism 4 for supplying a processing liquid (particularly an etching liquid) and a rinsing liquid (that is, an etching inhibitor) to the oxide film 50 of the wafer W held by the holding unit 1, and the wafer W held by the substrate holding unit 1 And a cup 3 provided so as to surround.
　基板保持部１は、回転機構２の回転軸２ａに連結されて回転軸２ａとともに回転する回転プレート１１と、回転プレート１１の周縁部に取り付けられた３つの支持ピン１２ａ及び３つの保持ピン１２ｂとを有する。各保持ピン１２ｂは、搬送アーム（図示せず）と基板保持部１との間でのウエハＷの受け渡しを妨げないように、回転プレート１１の外側の退避位置とウエハＷを保持する保持位置との間で回動可能となっている。各保持ピン１２ｂを退避位置に配置した状態で各支持ピン１２ａがウエハＷを受け取った後、各保持ピン１２ｂを回動させて保持位置に配置することで、ウエハＷが各支持ピン１２ａ及び各保持ピン１２ｂによって保持される。なお、基板保持部１は図示しない昇降機構によって昇降させられる。 The substrate holding unit 1 is connected to a rotating shaft 2a of the rotating mechanism 2 and rotates together with the rotating shaft 2a, three support pins 12a and three holding pins 12b attached to the peripheral portion of the rotating plate 11, and Have Each holding pin 12b has a retracted position outside the rotating plate 11 and a holding position for holding the wafer W so as not to hinder delivery of the wafer W between the transfer arm (not shown) and the substrate holding unit 1. It is possible to rotate between. After each support pin 12b receives the wafer W with each holding pin 12b placed in the retracted position, the holding pin 12b is rotated and placed in the holding position, so that the wafer W is placed in the holding position. It is held by the holding pin 12b. In addition, the board | substrate holding | maintenance part 1 is raised / lowered by the raising / lowering mechanism which is not shown in figure.
　液供給機構４は、水平方向へ移動可能な第１の液吐出ノズル２１及び第２の液吐出ノズル２２を有する。第１の液吐出ノズル２１は、酸化膜５０を溶解してエッチング処理を行うための処理液（例えば希フッ酸（ＤＨＦ））を吐出することができる。第２の液吐出ノズル２２は、処理液（例えば希フッ酸）及びリンス液（例えば純水（ＤＩＷ））を選択的に吐出することができる。 The liquid supply mechanism 4 has a first liquid discharge nozzle 21 and a second liquid discharge nozzle 22 that are movable in the horizontal direction. The first liquid discharge nozzle 21 can discharge a processing liquid (for example, dilute hydrofluoric acid (DHF)) for dissolving the oxide film 50 and performing an etching process. The second liquid discharge nozzle 22 can selectively discharge a treatment liquid (for example, dilute hydrofluoric acid) and a rinse liquid (for example, pure water (DIW)).
　第１の液吐出ノズル２１には第１の液供給ライン２３が接続され、第２の液吐出ノズル２２には第２の液供給ライン２８が接続されている。第１の液供給ライン２３には、バルブ２４を介して処理液供給ライン２６が接続されている。第２の液供給ライン２８には、バルブ２９を介して処理液供給ライン３１が接続されるとともに、バルブ３０を介してリンス液供給ライン３２が接続されている。バルブ２４の開閉を切り換えることで、処理液供給ライン２６から第１の液供給ライン２３への処理液の供給の有無、及び第１の液吐出ノズル２１からの処理液の吐出の有無を切り換えることができる。同様に、バルブ２９及びバルブ３０の開閉を切り換えることで、処理液供給ライン３１から第２の液供給ライン２８への処理液の供給の有無、リンス液供給ライン３２から第２の液供給ライン２８へのリンス液の供給の有無、及び第２の液吐出ノズル２２からの処理液又はリンス液の吐出の有無を切り換えることができる。なお、液供給機構４に含まれるこれらのバルブ２４、バルブ２９及びバルブ３０は、コントローラ１０１によって制御される。また図示は省略しているが、処理液供給ライン２６、処理液供給ライン３１及びリンス液供給ライン３２の各々には、液を送り出すためのポンプ及び流量制御装置等が設けられている。 A first liquid supply line 23 is connected to the first liquid discharge nozzle 21, and a second liquid supply line 28 is connected to the second liquid discharge nozzle 22. A processing liquid supply line 26 is connected to the first liquid supply line 23 via a valve 24. A treatment liquid supply line 31 is connected to the second liquid supply line 28 via a valve 29, and a rinse liquid supply line 32 is connected via a valve 30. By switching the opening / closing of the valve 24, the presence / absence of supply of the treatment liquid from the treatment liquid supply line 26 to the first liquid supply line 23 and the presence / absence of discharge of the treatment liquid from the first liquid discharge nozzle 21 are switched. Can do. Similarly, by switching between opening and closing of the valve 29 and the valve 30, whether or not the processing liquid is supplied from the processing liquid supply line 31 to the second liquid supply line 28, and whether the rinsing liquid supply line 32 is connected to the second liquid supply line 28. The presence or absence of the supply of the rinsing liquid to the liquid and the presence or absence of the discharge of the treatment liquid or the rinsing liquid from the second liquid discharge nozzle 22 can be switched. Note that the valve 24, the valve 29, and the valve 30 included in the liquid supply mechanism 4 are controlled by the controller 101. Although not shown, each of the processing liquid supply line 26, the processing liquid supply line 31, and the rinsing liquid supply line 32 is provided with a pump, a flow rate control device, and the like for sending out the liquid.
　このようにして設けられる第１の液吐出ノズル２１は、後述の第１の工程（図３の符合「Ｓ１」参照）において、ウエハＷの外周部の酸化膜５０に向けて処理液を吐出する第１処理液吐出ノズルとして使われる。一方、第２の液吐出ノズル２２は、後述の第１の工程ではウエハＷの中央部の酸化膜５０に向けてリンス液を吐出するリンス液吐出ノズルとして使われ、後述の第２の工程（図３の符合「Ｓ２」参照）ではウエハＷの中央部の酸化膜５０に向けて処理液を吐出する第２処理液吐出ノズルとして使われる。したがって、第１の液吐出ノズル２１は相対的にウエハＷの外周側に配置される一方で、第２の液吐出ノズル２２は相対的にウエハＷの内側に配置される。ここでいう内側とは、ウエハＷの回転軸線側を指し、図１に示す液処理装置１００では回転軸２ａに近い側を意味する。また外周側とは、ウエハＷの回転軸線から遠ざかる側を意味する。 The first liquid discharge nozzle 21 provided in this way discharges the processing liquid toward the oxide film 50 on the outer peripheral portion of the wafer W in a first process (see reference numeral “S1” in FIG. 3) described later. Used as a first processing liquid discharge nozzle. On the other hand, the second liquid discharge nozzle 22 is used as a rinse liquid discharge nozzle that discharges a rinsing liquid toward the oxide film 50 at the center of the wafer W in the first process described later. 3 is used as a second processing liquid discharge nozzle that discharges the processing liquid toward the oxide film 50 at the center of the wafer W. Accordingly, the first liquid discharge nozzle 21 is relatively disposed on the outer peripheral side of the wafer W, while the second liquid discharge nozzle 22 is relatively disposed on the inner side of the wafer W. The inside here refers to the rotation axis side of the wafer W, and means the side close to the rotation axis 2a in the liquid processing apparatus 100 shown in FIG. The outer peripheral side means a side away from the rotation axis of the wafer W.
　第１の液吐出ノズル２１は、第２の液吐出ノズル２２よりも小径で相対的に吐出流量が少なくなるように設計されている。例えば、第２の液吐出ノズル２２の径を１／４インチ程度に設定する一方で、第１の液吐出ノズル２１の径を第２の液吐出ノズル２２の径の１／２（すなわち１／８インチ）程度に設定することも可能である。小径の第１の液吐出ノズル２１は、小流量の処理液を吐出するため、ウエハＷの酸化膜５０に対して所望量の処理液を精度良く供給することができるとともに、処理液の消費量を抑えることができる。 The first liquid discharge nozzle 21 has a smaller diameter than the second liquid discharge nozzle 22 and is designed to have a relatively small discharge flow rate. For example, while the diameter of the second liquid discharge nozzle 22 is set to about 1/4 inch, the diameter of the first liquid discharge nozzle 21 is set to ½ of the diameter of the second liquid discharge nozzle 22 (that is, 1 / It can also be set to about 8 inches. Since the first liquid discharge nozzle 21 having a small diameter discharges a small flow rate of the processing liquid, it is possible to accurately supply a desired amount of the processing liquid to the oxide film 50 of the wafer W and to consume the processing liquid. Can be suppressed.
　また第１の液吐出ノズル２１は、ウエハＷの延在方向に対して傾斜して設けられている。第１の液吐出ノズル２１から吐出される処理液は、ウエハＷの外周側に向かって吐出される。これにより、処理液がウエハＷの酸化膜５０上に着地した際の、ウエハＷの内側への処理液の跳ね返りを抑えることができる。また第１の液吐出ノズル２１から吐出される処理液は、ウエハＷの回転方向に対して非垂直な方向であって、ウエハＷの回転方向に関してはウエハＷの回転方向と同方向に吐出される。これにより、第１の液吐出ノズル２１からの処理液のウエハＷに対する相対速度が小さくなり、酸化膜５０上における処理液の跳ね返りや、酸化膜５０上での処理液の意図しない方向への広がりを抑えることができる。なお、第１の液吐出ノズル２１からの処理液の吐出方向の詳細については、後述する（図４及び図５参照）。 Further, the first liquid discharge nozzle 21 is provided to be inclined with respect to the extending direction of the wafer W. The processing liquid discharged from the first liquid discharge nozzle 21 is discharged toward the outer peripheral side of the wafer W. Thereby, when the processing liquid lands on the oxide film 50 of the wafer W, the rebound of the processing liquid to the inner side of the wafer W can be suppressed. The processing liquid discharged from the first liquid discharge nozzle 21 is discharged in a direction that is non-perpendicular to the rotation direction of the wafer W and is the same as the rotation direction of the wafer W with respect to the rotation direction of the wafer W. The As a result, the relative speed of the processing liquid from the first liquid discharge nozzle 21 with respect to the wafer W decreases, and the processing liquid rebounds on the oxide film 50 and spreads in an unintended direction on the oxide film 50. Can be suppressed. Details of the discharge direction of the processing liquid from the first liquid discharge nozzle 21 will be described later (see FIGS. 4 and 5).
　一方、第２の液吐出ノズル２２はウエハＷの延在方向に対して垂直に配置されており、第２の液吐出ノズル２２から吐出された処理液及びリンス液は、ウエハＷの酸化膜５０に向かって鉛直方向に飛翔する。ただし、第２の液吐出ノズル２２はウエハＷの延在方向に対して傾斜して設けられてもよく、第２の液吐出ノズル２２から非鉛直方向へ処理液及びリンス液が吐出されてもよい。 On the other hand, the second liquid discharge nozzle 22 is arranged perpendicularly to the extending direction of the wafer W, and the processing liquid and the rinse liquid discharged from the second liquid discharge nozzle 22 are the oxide film 50 of the wafer W. Fly vertically toward However, the second liquid discharge nozzle 22 may be provided to be inclined with respect to the extending direction of the wafer W, and even if the processing liquid and the rinse liquid are discharged from the second liquid discharge nozzle 22 in the non-vertical direction. Good.
　第１の液吐出ノズル２１は第１のノズルホルダー２１ａに保持され、第２の液吐出ノズル２２は第２のノズルホルダー２２ａにより保持されている。第１のノズルホルダー２１ａには駆動機構４８が接続され、第２のノズルホルダー２２ａには駆動機構５２が接続されている。第１の液吐出ノズル２１及び第１のノズルホルダー２１ａは駆動機構４８によって移動させられ、第２の液吐出ノズル２２及び第２のノズルホルダー２２ａは駆動機構５２によって移動させられる。 The first liquid discharge nozzle 21 is held by the first nozzle holder 21a, and the second liquid discharge nozzle 22 is held by the second nozzle holder 22a. A driving mechanism 48 is connected to the first nozzle holder 21a, and a driving mechanism 52 is connected to the second nozzle holder 22a. The first liquid discharge nozzle 21 and the first nozzle holder 21 a are moved by the drive mechanism 48, and the second liquid discharge nozzle 22 and the second nozzle holder 22 a are moved by the drive mechanism 52.
　なお、上述の液供給機構４は一例にすぎない。例えば、上述の液吐出ノズル２２はリンス液吐出ノズル及び処理液吐出ノズルとして共用されるが、第２の液吐出ノズル２２の代わりに、バルブ２９を介して処理液供給ライン３１に接続される処理液吐出ノズルと、バルブ３０を介してリンス液供給ライン３２に接続されるリンス液吐出ノズルとが別個に設けられてもよい。 The liquid supply mechanism 4 described above is merely an example. For example, the liquid discharge nozzle 22 described above is commonly used as a rinse liquid discharge nozzle and a treatment liquid discharge nozzle, but instead of the second liquid discharge nozzle 22, a process connected to the process liquid supply line 31 via a valve 29. The liquid discharge nozzle and the rinse liquid discharge nozzle connected to the rinse liquid supply line 32 via the valve 30 may be provided separately.
　カップ３は、遠心力の影響を受けて回転するウエハＷから飛翔する処理液やリンス液を受け止め、外部へ排出する。カップ３の底部には排気通路３ａ及びドレイン管３ｂ、３ｃが設けられており、排気通路３ａは排気ポンプ（図示せず）の吸い込み側に連通する。 The cup 3 receives the processing liquid and the rinsing liquid flying from the rotating wafer W under the influence of the centrifugal force and discharges it to the outside. An exhaust passage 3a and drain pipes 3b and 3c are provided at the bottom of the cup 3, and the exhaust passage 3a communicates with a suction side of an exhaust pump (not shown).
　液処理装置１００の各構成部は、ＣＰＵ等の計算機（コンピュータ）及びメモリを含むコントローラ１０１に接続され、当該コントローラ１０１によって制御される。図１に示す液処理装置１００では、バルブ２４、バルブ２９、バルブ３０、駆動機構４８、駆動機構５２及び回転機構２が、コントローラ１０１によって制御される。またコントローラ１０１には、ユーザインターフェース１０２及び記憶部１０３も接続されている。ユーザインターフェース１０２には、液処理装置１００の各構成部を管理するために管理者がコマンドの入力操作等を行うためのキーボード、及び液処理装置１００の各構成部の稼働状況を表示するディスプレイ等が含まれる。記憶部１０３は、コンピュータによって読み取り可能な任意の非一時的な記録媒体によって構成され、例えばＣＤ－ＲＯＭ、ハードディスク、フレキシブルディスク、或いは不揮発性メモリなどによって構成可能である。この記憶部１０３には、液処理装置１００で実行される各種処理をコントローラ１０１の制御にて実現するための制御プログラムや処理条件データ等が記録されたレシピ、及び各構成部の制御に必要な他の情報が格納されている。したがってコントローラ１０１は、例えば、ユーザインターフェース１０２を介して管理者からの指示等を受けて、対応のレシピを記憶部１０３から呼び出して実行することができる。本実施形態の記憶部１０３には、後述の液処理方法の各種手順をコントローラ１０１に実行させるためのプログラムも記録されている。 Each component of the liquid processing apparatus 100 is connected to a controller 101 including a computer (computer) such as a CPU and a memory, and is controlled by the controller 101. In the liquid processing apparatus 100 illustrated in FIG. 1, the valve 24, the valve 29, the valve 30, the drive mechanism 48, the drive mechanism 52, and the rotation mechanism 2 are controlled by the controller 101. The controller 101 is also connected with a user interface 102 and a storage unit 103. The user interface 102 includes a keyboard for an administrator to input a command to manage each component of the liquid processing apparatus 100, a display for displaying the operating status of each component of the liquid processing apparatus 100, and the like. Is included. The storage unit 103 is configured by an arbitrary non-transitory recording medium readable by a computer, and can be configured by, for example, a CD-ROM, a hard disk, a flexible disk, or a nonvolatile memory. This storage unit 103 is necessary for control of each component and a recipe in which a control program and processing condition data for realizing various processes executed by the liquid processing apparatus 100 are realized by the control of the controller 101. Other information is stored. Accordingly, for example, the controller 101 can call and execute a corresponding recipe from the storage unit 103 in response to an instruction from the administrator via the user interface 102. The storage unit 103 of the present embodiment also stores a program for causing the controller 101 to execute various procedures of the liquid processing method described later.
［基板の表面プロファイル］
　図２は、処理対象のウエハＷの水平方向位置と厚みとの関係例を概念的に示すグラフである。図２は、ウエハＷのある断面を基準としており、横軸は、ウエハＷの回転軸線からの水平方向への距離を表す「水平方向位置」を示し、縦軸は、基準水平面からの高さ方向への距離を表す「ウエハの厚み」を示す。したがってウエハＷの回転軸線上の位置は、図２の横軸の「０」によって示される。なお、図２ではウエハＷの厚さが線形的に変化しているが、図２は理解を容易にするために簡略的に示されたグラフに過ぎず、実際のウエハＷの厚さは、より不規則的に変化しうる。 [Surface profile of substrate]
FIG. 2 is a graph conceptually showing an example of the relationship between the horizontal position and thickness of the wafer W to be processed. FIG. 2 is based on a cross section of the wafer W, the horizontal axis indicates the “horizontal position” indicating the distance in the horizontal direction from the rotation axis of the wafer W, and the vertical axis indicates the height from the reference horizontal plane. “Wafer thickness” representing the distance in the direction is shown. Therefore, the position of the wafer W on the rotation axis is indicated by “0” on the horizontal axis of FIG. In FIG. 2, the thickness of the wafer W is linearly changed, but FIG. 2 is only a simplified graph for ease of understanding, and the actual thickness of the wafer W is Can change more irregularly.
　本実施形態の液処理方法及び液処理装置１００の処理対象のウエハＷは、中心部よりも外周部の方が相対的に大きな厚みを有する。より具体的には、ウエハＷに形成された酸化膜５０の厚みが、中心部よりも外周部の方が大きい。したがって図２に示すように、ウエハＷの中心部である回転軸線が通過する位置（図２の横軸の「０」参照）から水平方向に一定の範囲ではウエハＷはほぼ同じ厚みを有するのに対し、ウエハＷの最外周部近傍の位置（図２の横軸の左右両端部近傍参照）ではウエハＷの厚みが急激に増大している。 The wafer W to be processed by the liquid processing method and the liquid processing apparatus 100 of the present embodiment has a relatively larger thickness at the outer peripheral portion than at the central portion. More specifically, the thickness of the oxide film 50 formed on the wafer W is larger at the outer peripheral portion than at the central portion. Therefore, as shown in FIG. 2, the wafer W has substantially the same thickness within a certain range in the horizontal direction from the position (see “0” on the horizontal axis in FIG. 2) through which the rotation axis that is the center of the wafer W passes. On the other hand, at the position near the outermost peripheral portion of the wafer W (see the vicinity of the left and right end portions of the horizontal axis in FIG. 2), the thickness of the wafer W increases rapidly.
　このようなウエハＷの酸化膜５０を平坦にするため、以下に説明する液処理方法では、まず、酸化膜５０の外周部のうち内側部から盛り上がっている部分（図２の符合「Ｑ」参照）が処理液によりエッチングされ、酸化膜５０の外周部と中心部との厚み差が低減される。その後、内側部及び外周部を含む酸化膜５０の全体が処理液によりエッチングされ、酸化膜５０の全体が所望の厚さになるようにエッチング処理が行われる。このように２段階に分けてエッチング処理を行うことによって、外周部と中心部との厚み差を効果的に低減して、酸化膜５０の全体を精度良く平坦化することができる。 In order to flatten the oxide film 50 of the wafer W, in the liquid processing method described below, first, a portion of the outer peripheral portion of the oxide film 50 that rises from the inner side (see reference sign “Q” in FIG. 2). ) Is etched by the treatment liquid, and the difference in thickness between the outer peripheral portion and the central portion of the oxide film 50 is reduced. Thereafter, the entire oxide film 50 including the inner portion and the outer peripheral portion is etched by the processing liquid, and an etching process is performed so that the entire oxide film 50 has a desired thickness. By performing the etching process in two stages as described above, the thickness difference between the outer peripheral portion and the central portion can be effectively reduced, and the entire oxide film 50 can be flattened with high accuracy.
［液処理方法のフロー］
　次に、上述の液処理装置１００を使って行われる液処理方法について説明する。 [Flow of liquid processing method]
Next, a liquid processing method performed using the above-described liquid processing apparatus 100 will be described.
　以下の第１の工程及び第２の工程を含む液処理方法は、コントローラ１０１が各部を適宜制御することによって行われる。コントローラ１０１は、ウエハＷの酸化膜５０の表面プロファイルに関するデータ（以下、「表面プロファイルデータ」とも称する）を取得し、当該データに基づいてバルブ２４、バルブ２９及びバルブ３０の開閉を制御する。コントローラ１０１は、表面プロファイルデータを任意の方法で取得することができる。例えば、ウエハＷが液処理装置１００に搬入される前に酸化膜５０の表面プロファイルが測定されることにより取得された表面プロファイルデータを、コントローラ１０１は外部装置から取得してもよい。またコントローラ１０１は、基板保持部１に保持されたウエハＷの酸化膜５０の表面プロファイルを図示しない計測装置により測定させて、当該計測装置から表面プロファイルデータを取得してもよい。 The liquid processing method including the following first step and second step is performed by the controller 101 controlling each part as appropriate. The controller 101 acquires data related to the surface profile of the oxide film 50 of the wafer W (hereinafter also referred to as “surface profile data”), and controls the opening / closing of the valve 24, the valve 29, and the valve 30 based on the data. The controller 101 can acquire surface profile data by an arbitrary method. For example, the controller 101 may acquire from the external device the surface profile data acquired by measuring the surface profile of the oxide film 50 before the wafer W is loaded into the liquid processing apparatus 100. The controller 101 may acquire the surface profile data from the measurement device by measuring the surface profile of the oxide film 50 of the wafer W held on the substrate holding unit 1 using a measurement device (not shown).
　図３は、液処理方法の一例を示すフローチャートである。以下に説明する液処理方法では、中心部に形成された酸化膜５０の厚みよりも外周部に形成された酸化膜５０の厚みの方が大きい基板に対して処理液が供給され、酸化膜５０のエッチングが行われる。 FIG. 3 is a flowchart showing an example of a liquid processing method. In the liquid processing method described below, the processing liquid is supplied to a substrate in which the thickness of the oxide film 50 formed in the outer peripheral portion is larger than the thickness of the oxide film 50 formed in the central portion. Etching is performed.
　図３に示す液処理方法では、まず、ウエハＷの外周部における酸化膜５０の厚みを調整する第１の工程Ｓ１が行われ、その後、ウエハＷの酸化膜５０の全体の厚みを調整する第２の工程Ｓ２が行われる。第１の工程Ｓ１では、ウエハＷを回転させながら、外周部に形成された中心部より厚い酸化膜５０に処理液が供給されるとともに、当該処理液が供給される位置よりもウエハＷの中心側に、処理液による酸化膜５０のエッチングを阻害するリンス液を供給して外周部の酸化膜５０のエッチングが行われる。そして、第１の工程Ｓ１の後に行われる第２の工程Ｓ２では、回転するウエハＷに処理液を供給し、予め設定された膜厚までエッチングが行われる。 In the liquid processing method shown in FIG. 3, first, a first step S <b> 1 for adjusting the thickness of the oxide film 50 on the outer peripheral portion of the wafer W is performed, and thereafter, the first thickness for adjusting the entire thickness of the oxide film 50 on the wafer W is adjusted. Step S2 of 2 is performed. In the first step S1, while the wafer W is rotated, the processing liquid is supplied to the oxide film 50 thicker than the central portion formed on the outer peripheral portion, and the center of the wafer W is more than the position where the processing liquid is supplied. On the side, the rinsing liquid that inhibits the etching of the oxide film 50 by the treatment liquid is supplied to etch the outer peripheral oxide film 50. Then, in the second step S2 performed after the first step S1, the processing liquid is supplied to the rotating wafer W, and etching is performed to a preset film thickness.
　すなわち第１の工程Ｓ１では、回転するウエハＷに形成された酸化膜５０に対し、第１の液吐出ノズル２１から処理液を供給する一方で、第２の液吐出ノズル２２からリンス液を供給する。この際、第１の液吐出ノズル２１から吐出された処理液が供給されるウエハＷの外周側の酸化膜５０上の位置よりも、ウエハＷの中心側の酸化膜５０上の位置に、第２の液吐出ノズル２２から吐出されたリンス液が供給される。すなわち第１の工程Ｓ１では、処理液の着地位置よりもリンス液の着地位置の方がウエハＷの中心側となる。これにより、処理液によってウエハＷの外周側の酸化膜５０のエッチングを進行させることができる。このように第１の工程Ｓ１では、ウエハＷの外周側の酸化膜５０のみが重点的にエッチングされる。さらに、ウエハＷの内側の酸化膜５０をリンス液によって保護することができる。すなわち、ウエハＷの外周部（特に最外周部近傍の位置）に処理液を供給する場合に、ウエハＷ上において処理液の供給位置よりも中心側にリンス液を供給しないと、ウエハＷに着地した処理液が中心側にも広がって、本来であればエッチングが望まれていないウエハＷの中心側部分もエッチングされる可能性がある。一方、本実施形態のように、中心側にリンス液を供給した状態でウエハＷの外周部に処理液を供給することで、ウエハＷの中心側部分をリンス液で覆って処理液から保護することができる。 That is, in the first step S1, while supplying the processing liquid from the first liquid discharge nozzle 21 to the oxide film 50 formed on the rotating wafer W, the rinsing liquid is supplied from the second liquid discharge nozzle 22. To do. At this time, the first liquid discharge nozzle 21 is positioned at a position on the oxide film 50 on the center side of the wafer W, rather than on the oxide film 50 on the outer peripheral side of the wafer W to which the processing liquid discharged from the first liquid discharge nozzle 21 is supplied. The rinse liquid discharged from the second liquid discharge nozzle 22 is supplied. That is, in the first step S1, the landing position of the rinse liquid is closer to the center side of the wafer W than the landing position of the processing liquid. Thereby, the etching of the oxide film 50 on the outer peripheral side of the wafer W can be advanced by the processing liquid. Thus, in the first step S1, only the oxide film 50 on the outer peripheral side of the wafer W is intensively etched. Furthermore, the oxide film 50 inside the wafer W can be protected by the rinse liquid. That is, when supplying the processing liquid to the outer peripheral portion of the wafer W (particularly the position in the vicinity of the outermost peripheral portion), if the rinsing liquid is not supplied to the center side of the processing liquid supply position on the wafer W, it will land on the wafer W. The processed liquid spreads to the center side, and the center side portion of the wafer W which is not originally desired to be etched may be etched. On the other hand, as in this embodiment, by supplying the processing liquid to the outer peripheral portion of the wafer W with the rinsing liquid supplied to the center side, the central side portion of the wafer W is covered with the rinsing liquid and protected from the processing liquid. be able to.
　なお第１の工程Ｓ１は、酸化膜５０に対するリンス液の供給が開始された後に、酸化膜５０に対する処理液の供給が開始されることで行われる。すなわち、図３に示す液処理方法がスタートすると、第２の液吐出ノズル２２から酸化膜５０へのリンス液の供給が開始され（図３のＳ１１参照）、その後、第１の液吐出ノズル２１からの処理液の供給が開始される（Ｓ１２）。具体的には、上述のステップＳ１１の前は、図１に示すバルブ２４、バルブ２９及びバルブ３０の全てが閉状態である。そして、コントローラ１０１の制御下でバルブ３０が開かれることによってステップＳ１１が開始され、ウエハＷの中央部の酸化膜５０に向けて第２の液吐出ノズル２２からリンス液が吐出される。酸化膜５０上に供給されたリンス液は、ウエハＷの回転に伴って外周側に広がり、酸化膜５０の表面全体を被覆する。続いて、コントローラ１０１の制御下でバルブ２４が開かれることによってステップＳ１２が開始され、ウエハＷの外周側の酸化膜５０に向けて第１の液吐出ノズル２１から処理液が吐出される。 The first step S1 is performed by starting the supply of the treatment liquid to the oxide film 50 after the supply of the rinse liquid to the oxide film 50 is started. That is, when the liquid processing method shown in FIG. 3 starts, the supply of the rinsing liquid from the second liquid discharge nozzle 22 to the oxide film 50 is started (see S11 in FIG. 3), and then the first liquid discharge nozzle 21 is started. The supply of the processing liquid from is started (S12). Specifically, before the above-described step S11, all of the valve 24, the valve 29, and the valve 30 shown in FIG. 1 are closed. Then, when the valve 30 is opened under the control of the controller 101, step S <b> 11 is started, and the rinse liquid is discharged from the second liquid discharge nozzle 22 toward the oxide film 50 at the center of the wafer W. The rinse liquid supplied onto the oxide film 50 spreads on the outer peripheral side as the wafer W rotates, and covers the entire surface of the oxide film 50. Subsequently, step S12 is started by opening the valve 24 under the control of the controller 101, and the processing liquid is discharged from the first liquid discharge nozzle 21 toward the oxide film 50 on the outer peripheral side of the wafer W.
　ステップＳ１２における処理液の供給開始は、第２の液吐出ノズル２２から吐出されたリンス液が酸化膜５０上の十分な範囲を被覆した後（より好ましくは、少なくとも第１の液吐出ノズル２１から吐出される処理液の着地地点よりも内側の範囲をリンス液が被覆した後）に行われることが好ましい。これにより、ウエハＷの内側における酸化膜５０がリンス液によって保護された状態で処理液が供給されるため、処理液の跳ね返りの影響を抑制することができる。 The supply of the processing liquid in step S12 is started after the rinse liquid discharged from the second liquid discharge nozzle 22 covers a sufficient range on the oxide film 50 (more preferably, at least from the first liquid discharge nozzle 21). It is preferably performed after the rinsing liquid covers the area inside the landing point of the discharged processing liquid. Thereby, since the processing liquid is supplied in a state where the oxide film 50 inside the wafer W is protected by the rinse liquid, it is possible to suppress the influence of the rebound of the processing liquid.
　また特に、第１の工程Ｓ１において酸化膜５０に供給される処理液は、以下の条件１及び条件２を満たすように、第１の液吐出ノズル２１から吐出される。 In particular, the treatment liquid supplied to the oxide film 50 in the first step S1 is discharged from the first liquid discharge nozzle 21 so as to satisfy the following conditions 1 and 2.
　図４は、第１の液吐出ノズル２１及びウエハＷを側方から見た場合の配置関係例を示す概念図である。第１の工程Ｓ１において第１の液吐出ノズル２１から吐出された処理液は、符合「Ｄ１」によって示される吐出方向に沿ってウエハＷの外周側に向かって飛翔し、ウエハＷの外周部における酸化膜５０上に着地する（条件１）。とりわけ、第１の工程Ｓ１における第１の液吐出ノズル２１からの処理液の吐出方向Ｄ１が、ウエハＷが延在する方向Ｄ２に対して成す鋭角の角度αは、「２０°≦α≦７０°」を満たすことが好ましい。この角度αが当該範囲にある場合、特に効果的に、ウエハＷの内側への処理液の跳ね返りを抑えることができる。 FIG. 4 is a conceptual diagram showing an example of an arrangement relationship when the first liquid discharge nozzle 21 and the wafer W are viewed from the side. The processing liquid discharged from the first liquid discharge nozzle 21 in the first step S1 flies toward the outer peripheral side of the wafer W along the discharge direction indicated by the reference numeral “D1”, and in the outer peripheral portion of the wafer W. Land on the oxide film 50 (condition 1). In particular, the acute angle α formed by the discharge direction D1 of the processing liquid from the first liquid discharge nozzle 21 in the first step S1 with respect to the direction D2 in which the wafer W extends is “20 ° ≦ α ≦ 70. It is preferable to satisfy “°”. When the angle α is within the range, it is possible to suppress the splash of the processing liquid to the inside of the wafer W particularly effectively.
　図５は、第１の液吐出ノズル２１及びウエハＷを上方から見た場合の配置関係例を示す概念図である。第１の工程Ｓ１において第１の液吐出ノズル２１から酸化膜５０に供給される処理液は、ウエハＷの回転方向Ｒに関しては、ウエハＷの回転方向Ｒと同じ方向へ飛翔して酸化膜５０上に着地する（条件２）。とりわけ、第１の工程Ｓ１において、処理液の進路がウエハＷに投影されて形成される投影進行路Ｐの方向と、当該投影進行路Ｐの延長線ＰＥとウエハＷの最外周部との交点ＣにおけるウエハＷの接線の方向Ｔとによって形成される鋭角の角度βは、「４０°≦β≦８０°」を満たすことが好ましい。この角度βが当該範囲にある場合、酸化膜５０上における処理液の跳ね返りや、酸化膜５０上での処理液の意図しない方向への広がりを、特に効果的に抑えることができる。 FIG. 5 is a conceptual diagram showing an arrangement relation example when the first liquid discharge nozzle 21 and the wafer W are viewed from above. The processing liquid supplied from the first liquid discharge nozzle 21 to the oxide film 50 in the first step S <b> 1 flies in the same direction as the rotation direction R of the wafer W with respect to the rotation direction R of the wafer W, and the oxide film 50. Land on top (condition 2). In particular, in the first step S1, the direction of the projection traveling path P formed by projecting the path of the processing liquid onto the wafer W and the intersection of the extension line PE of the projection traveling path P and the outermost peripheral portion of the wafer W. The acute angle β formed by the tangential direction T of the wafer W in C preferably satisfies “40 ° ≦ β ≦ 80 °”. When the angle β is within the range, it is possible to particularly effectively suppress the rebound of the treatment liquid on the oxide film 50 and the spread of the treatment liquid on the oxide film 50 in an unintended direction.
　そして、図３に示す第１の工程Ｓ１における処理液及びリンス液の供給は、ウエハＷの外周部における酸化膜５０の厚みが中心部と同じ厚さになるまで続けられる。そして、ウエハＷの外周部における酸化膜５０の厚みが中心部と同じ厚さに達したら、第１の液吐出ノズル２１からの処理液の供給が停止され（Ｓ１３）、その後、第２の液吐出ノズル２２からのリンス液の供給が停止される（Ｓ１４）。具体的には、コントローラ１０１の制御下でバルブ２４及びバルブ３０が閉じられることで、第１の液吐出ノズル２１からの処理液の吐出及び第２の液吐出ノズル２２からのリンス液の吐出が止められる。 Then, the supply of the processing liquid and the rinsing liquid in the first step S1 shown in FIG. 3 is continued until the thickness of the oxide film 50 on the outer peripheral portion of the wafer W becomes the same as that of the central portion. Then, when the thickness of the oxide film 50 on the outer peripheral portion of the wafer W reaches the same thickness as the central portion, the supply of the processing liquid from the first liquid discharge nozzle 21 is stopped (S13), and then the second liquid The supply of the rinse liquid from the discharge nozzle 22 is stopped (S14). Specifically, the valve 24 and the valve 30 are closed under the control of the controller 101, whereby the treatment liquid is discharged from the first liquid discharge nozzle 21 and the rinse liquid is discharged from the second liquid discharge nozzle 22. It can be stopped.
　そして、この第１の工程Ｓ１の後に行われる第２の工程Ｓ２では、回転するウエハＷの酸化膜５０に対し、第２の液吐出ノズル２２から処理液が供給される。すなわち、上述のステップＳ１４の直後に、コントローラ１０１の制御下でバルブ２９が開かれ、第２の液吐出ノズル２２から酸化膜５０に対する処理液の供給が開始される（Ｓ１５）。そして、ウエハＷの表面側Ｆ１の全体にわたる酸化膜５０の厚みが予め設定された厚さになるまで、第２の液吐出ノズル２２からの処理液の供給は続けられる。 In the second step S2 performed after the first step S1, the processing liquid is supplied from the second liquid discharge nozzle 22 to the oxide film 50 of the rotating wafer W. That is, immediately after the above-described step S14, the valve 29 is opened under the control of the controller 101, and supply of the processing liquid from the second liquid discharge nozzle 22 to the oxide film 50 is started (S15). Then, the supply of the processing liquid from the second liquid discharge nozzle 22 is continued until the thickness of the oxide film 50 over the entire surface side F1 of the wafer W reaches a preset thickness.
　なお第２の工程Ｓ２では、酸化膜５０のエッチングをウエハＷの全体にわたって行うため、処理液が酸化膜５０の表面の全体を覆うように、第２の液吐出ノズル２２から酸化膜５０上に処理液が供給される。そのため、第２の液吐出ノズル２２及び第２のノズルホルダー２２ａは水平方向に関してウエハＷの回転軸線Ａ上に又は回転軸線Ａの近傍に配置され、第２の液吐出ノズル２２から吐出された処理液は、酸化膜５０のうちの回転軸線Ａ上の位置又は回転軸線Ａの近傍位置に着地させられる。特に、酸化膜５０の全体を均一にエッチングするには、処理液の着地した際の広がりを考慮し、回転軸線Ａから少し離れた酸化膜５０上の位置に、第２の液吐出ノズル２２からの処理液を着地させることが好ましい。なお、回転軸線Ａが通過するウエハＷの中心に第２の液吐出ノズル２２からの処理液を着地させると、遠心力が作用しない場所に常に新鮮な処理液が供給され、ウエハＷの中心でのエッチングが他の部分のエッチングよりも進んでしまうため、酸化膜５０の全体を均一にエッチングする観点からは好ましくない。このように第２の工程Ｓ２では、ウエハＷのうち、第１の工程Ｓ１で処理液が供給されていた位置には処理液は供給されず、第１の工程Ｓ１で処理液が供給されていた位置よりもウエハＷの中心側に処理液が供給される。 In the second step S2, the etching of the oxide film 50 is performed over the entire wafer W, so that the processing liquid covers the entire surface of the oxide film 50 from the second liquid discharge nozzle 22 onto the oxide film 50. Treatment liquid is supplied. Therefore, the second liquid discharge nozzle 22 and the second nozzle holder 22a are disposed on or near the rotation axis A of the wafer W with respect to the horizontal direction, and the process discharged from the second liquid discharge nozzle 22 is performed. The liquid is landed at a position on the rotation axis A or in the vicinity of the rotation axis A in the oxide film 50. In particular, in order to uniformly etch the entire oxide film 50, the second liquid discharge nozzle 22 is positioned at a position on the oxide film 50 slightly away from the rotation axis A in consideration of the spread when the processing liquid is landed. It is preferable to land the treatment liquid. Note that when the processing liquid from the second liquid discharge nozzle 22 is landed on the center of the wafer W through which the rotation axis A passes, fresh processing liquid is always supplied to a place where the centrifugal force does not act, and at the center of the wafer W. Since this etching advances more than the etching of other portions, it is not preferable from the viewpoint of uniformly etching the entire oxide film 50. Thus, in the second step S2, the processing liquid is not supplied to the position of the wafer W where the processing liquid is supplied in the first step S1, and the processing liquid is supplied in the first step S1. The processing liquid is supplied to the center side of the wafer W from the above position.
　また酸化膜５０の十分な範囲を処理液によって覆うためには、第２の液吐出ノズル２２からの処理液の吐出量を十分に大きくするとともに、ウエハＷの回転数を十分に大きくすることが好ましい。したがって、第２の工程Ｓ２における第２の液吐出ノズル２２からの処理液の酸化膜５０に対する単位時間当たりの供給量は、第１の工程Ｓ１における第１の液吐出ノズル２１からの処理液の酸化膜５０に対する単位時間当たりの供給量よりも大きい。また、第２の工程Ｓ２におけるウエハＷの回転数は、第１の工程Ｓ１におけるウエハＷの回転数よりも速い。 Further, in order to cover a sufficient range of the oxide film 50 with the processing liquid, it is necessary to sufficiently increase the discharge amount of the processing liquid from the second liquid discharge nozzle 22 and sufficiently increase the rotation speed of the wafer W. preferable. Therefore, the supply amount per unit time of the processing liquid from the second liquid discharge nozzle 22 in the second step S2 to the oxide film 50 is the amount of the processing liquid from the first liquid discharge nozzle 21 in the first step S1. It is larger than the supply amount per unit time to the oxide film 50. Further, the rotational speed of the wafer W in the second step S2 is faster than the rotational speed of the wafer W in the first step S1.
　例えば、上述のステップＳ１１～ステップＳ１２の間は、比較的低速である第１の回転速度（例えば２００ｒｐｍ（revolution per minute））で回転するウエハＷに対し、比較的多量である第１の供給量（例えば１５００ｍｌ／ｍｉｎ（ミリリットル／分））のリンス液を第２の液吐出ノズル２２から供給することで、酸化膜５０の表面全体をリンス液で覆うことができる。そして上述のステップＳ１２～ステップＳ１３の間は、比較的低速である第２の回転速度（例えば２００ｒｐｍ）で回転するウエハＷに対し、比較的少量である第２の供給量（例えば５００ｍｌ／ｍｉｎ）のリンス液を第２の液吐出ノズル２２から供給し、且つ、比較的少量である第３の供給量（例えば４００ｍｌ／ｍｉｎ）の処理液を第１の液吐出ノズル２１から供給することができる。そして上述のステップＳ１３～ステップＳ１４の間は、上述の第２の回転速度よりも高速である第３の回転速度（例えば７５０ｒｐｍ）で回転するウエハＷに対し、比較的多量である第４の供給量（例えば１５００ｍｌ／ｍｉｎ）のリンス液を第２の液吐出ノズル２２から供給することで、酸化膜５０の表面全体をリンス液で覆うことができる。 For example, during the above-described steps S11 to S12, the first supply amount that is relatively large with respect to the wafer W that rotates at a relatively low first rotation speed (for example, 200 rpm (revolution per minute)). By supplying a rinse liquid (for example, 1500 ml / min (milliliter / min)) from the second liquid discharge nozzle 22, the entire surface of the oxide film 50 can be covered with the rinse liquid. Then, during the above-described steps S12 to S13, a relatively small second supply amount (for example, 500 ml / min) is applied to the wafer W rotating at a relatively low second rotation speed (for example, 200 rpm). The rinsing liquid can be supplied from the second liquid discharge nozzle 22, and a relatively small third supply amount (for example, 400 ml / min) can be supplied from the first liquid discharge nozzle 21. . During the above-described step S13 to step S14, a relatively large amount of the fourth supply is supplied to the wafer W rotating at a third rotation speed (for example, 750 rpm) which is higher than the above-described second rotation speed. By supplying an amount of rinse liquid (for example, 1500 ml / min) from the second liquid discharge nozzle 22, the entire surface of the oxide film 50 can be covered with the rinse liquid.
　なお、上述のステップＳ１２～ステップＳ１３の間におけるウエハＷの具体的な回転速度は、ウエハＷの外周部の酸化膜５０のプロファイルに応じて設定されることが好ましい。すなわちステップＳ１２～ステップＳ１３において、ウエハＷ上に供給されたリンス液は、遠心力を受けてウエハＷの外周部に向かって広がるが、リンス液に作用する遠心力の大きさはウエハＷの回転速度に応じて変わる。その一方で、ウエハＷ上におけるリンス液と処理液との境界の状態は、リンス液が受ける遠心力の大きさによって変わり、リンス液が大きな遠心力を受けるほど、ウエハＷの外周部に供給される処理液のエッチング作用がリンス液によって阻害される。そのため、ウエハＷの回転速度が速くなるほど、ウエハＷの外周部におけるリンス液の影響が大きくなり、処理液とリンス液との境界近傍におけるエッチング量の変化が緩やかになって、ウエハＷの径方向に関するエッチングプロファイルは緩やかな角度を形成する。一方、ウエハＷの回転速度が遅くなるほど、ウエハＷの外周部におけるリンス液の影響が小さくなり、処理液とリンス液との境界近傍におけるエッチング量の変化が急激になって、ウエハＷの径方向に関するエッチングプロファイルは急な角度を形成する。したがってステップＳ１２～ステップＳ１３の間の工程は、このようなエッチング特性を考慮し、ウエハＷの外周部における酸化膜５０を中心部の酸化膜５０と同じ厚さにエッチングするのに適した回転速度で、ウエハＷが回転されることが好ましい。 Note that the specific rotation speed of the wafer W between the above-described steps S12 to S13 is preferably set according to the profile of the oxide film 50 on the outer peripheral portion of the wafer W. That is, in step S12 to step S13, the rinsing liquid supplied onto the wafer W receives a centrifugal force and spreads toward the outer peripheral portion of the wafer W. The magnitude of the centrifugal force acting on the rinsing liquid is the rotation of the wafer W. Varies with speed. On the other hand, the state of the boundary between the rinsing liquid and the processing liquid on the wafer W changes depending on the magnitude of the centrifugal force received by the rinsing liquid, and as the rinsing liquid receives a larger centrifugal force, the boundary liquid is supplied to the outer peripheral portion of the wafer W. The etching action of the treatment liquid is hindered by the rinse liquid. Therefore, as the rotational speed of the wafer W increases, the influence of the rinsing liquid on the outer periphery of the wafer W increases, and the change in the etching amount in the vicinity of the boundary between the processing liquid and the rinsing liquid becomes gradual. The etching profile for forms a gentle angle. On the other hand, the slower the rotation speed of the wafer W, the smaller the influence of the rinsing liquid on the outer periphery of the wafer W, and the change in the etching amount in the vicinity of the boundary between the processing liquid and the rinsing liquid becomes abrupt. The etching profile for forms a steep angle. Therefore, in the process between step S12 and step S13, considering such etching characteristics, a rotation speed suitable for etching the oxide film 50 on the outer peripheral portion of the wafer W to the same thickness as the oxide film 50 in the central portion. Thus, it is preferable that the wafer W is rotated.
　そして上述のステップＳ１４とステップＳ１５とをほぼ同時に行うことで、第２の液吐出ノズル２２から吐出される液体を、間断なく、リンス液から処理液に切り換えることができる。そしてステップＳ１５～ステップＳ１６の間は、ウエハＷの回転速度を上記の第３の速度から第４の速度（例えば５００ｒｐｍ）に徐々に低下させつつ、比較的多量である第５の供給量（例えば１５００ｍｌ／ｍｉｎ）の処理液を第２の液吐出ノズル２２からウエハＷに供給することで、酸化膜５０の表面全体を処理液で覆うことができる。 And by performing step S14 and step S15 described above almost simultaneously, the liquid discharged from the second liquid discharge nozzle 22 can be switched from the rinse liquid to the processing liquid without interruption. During steps S15 to S16, the rotational speed of the wafer W is gradually decreased from the third speed to the fourth speed (for example, 500 rpm), and the fifth supply amount (for example, a relatively large amount) (for example, By supplying a processing liquid of 1500 ml / min) from the second liquid discharge nozzle 22 to the wafer W, the entire surface of the oxide film 50 can be covered with the processing liquid.
　そして、ウエハＷの全体にわたる酸化膜５０の厚みが所望厚に達したら、コントローラ１０１の制御下でバルブ２９が閉じられて、第２の液吐出ノズル２２からの処理液の供給が停止される（Ｓ１６）。その後、コントローラ１０１の制御下でバルブ３０が開かれて、第２の液吐出ノズル２２から酸化膜５０にリンス液が供給される（Ｓ１７）。そして、酸化膜５０上に残存する処理液がリンス液によって洗い流された後に、コントローラ１０１の制御下でバルブ３０が閉じられて、第２の液吐出ノズル２２から酸化膜５０に対するリンス液の供給が停止される（Ｓ１８）。なお、上述のステップＳ１７～ステップＳ１８の間は、上述の第４の速度よりも高速な第５の速度（例えば１５００ｒｐｍ）で回転するウエハＷに対し、比較的多量である第６の供給量（例えば１５００ｍｌ／ｍｉｎ）のリンス液を第２の液吐出ノズル２２から供給することで、酸化膜５０の表面全体をリンス液で覆うことができる。 When the thickness of the oxide film 50 over the entire wafer W reaches a desired thickness, the valve 29 is closed under the control of the controller 101, and the supply of the processing liquid from the second liquid discharge nozzle 22 is stopped ( S16). Thereafter, the valve 30 is opened under the control of the controller 101, and the rinse liquid is supplied from the second liquid discharge nozzle 22 to the oxide film 50 (S17). Then, after the processing liquid remaining on the oxide film 50 is washed away by the rinse liquid, the valve 30 is closed under the control of the controller 101, and the rinse liquid is supplied from the second liquid discharge nozzle 22 to the oxide film 50. Stopped (S18). Note that, during the above-described steps S17 to S18, the sixth supply amount (relatively large amount) is supplied to the wafer W rotating at the fifth speed (for example, 1500 rpm) higher than the fourth speed. For example, the entire surface of the oxide film 50 can be covered with the rinse liquid by supplying the rinse liquid of 1500 ml / min) from the second liquid discharge nozzle 22.
　そして上述のステップＳ１８の後は、第１の液吐出ノズル２１及び第２の液吐出ノズル２２からの液体の吐出を停止させた状態で比較的高速（例えば１５００ｍｌ／ｍｉｎ）でウエハＷを回転させることで、ウエハＷのスピンドライが行われる。上述の一連の処理ステップを経ることによって、ウエハＷの酸化膜５０は平坦化される。 After step S18 described above, the wafer W is rotated at a relatively high speed (for example, 1500 ml / min) in a state where the liquid discharge from the first liquid discharge nozzle 21 and the second liquid discharge nozzle 22 is stopped. Thus, the spin drying of the wafer W is performed. Through the above-described series of processing steps, the oxide film 50 of the wafer W is planarized.
　以上説明したように本実施形態の液処理装置１００及び液処理方法によれば、上述の第１の工程Ｓ１及び第２の工程Ｓ２が順次行われることによって、平坦な酸化膜５０をウエハＷに精度良く形成することができる。 As described above, according to the liquid processing apparatus 100 and the liquid processing method of the present embodiment, the flat oxide film 50 is formed on the wafer W by sequentially performing the first step S1 and the second step S2 described above. It can be formed with high accuracy.
　特に、上述の条件１（図４参照）及び条件２（図５参照）を満たすように第１の液吐出ノズル２１から処理液を吐出させることによって、意図しない箇所で酸化膜５０がエッチングされてしまうことを効果的に防ぐことができるとともに処理液の跳ね返りや広がりを抑えることができる。 In particular, by discharging the processing liquid from the first liquid discharge nozzle 21 so as to satisfy the above-described condition 1 (see FIG. 4) and condition 2 (see FIG. 5), the oxide film 50 is etched at an unintended location. Can be effectively prevented, and the rebound and spread of the processing liquid can be suppressed.
　本件発明者は、第１の液吐出ノズル２１からの処理液の吐出角度を変えながら酸化膜５０のエッチング量を水平方向位置と関連づけて測定し、酸化膜５０のエッチング量と水平方向位置との関係を評価した。具体的には、上述の条件１及び条件２を満たす範囲で処理液の吐出角度を変えて複数回の測定を行った検証１と、上述の条件１及び／又は条件２を満たさない範囲で処理液の吐出角度を変えて複数回の測定を行った検証２とを行った。その結果、上述の条件１及び条件２が満たされる検証１では、いずれの場合においても、「処理液によって酸化膜５０の除去が観察された酸化膜５０上の最も内側の位置」と「当該処理液が酸化膜５０上に着地した位置」との差（以下、「処理液ずれ量」と称する）は、概ね１０ｍｍ（ミリメートル）以内の範囲に収まっていた。一方、上述の条件１及び条件２以外の条件は上記の検証１とほぼ同じにして且つ上述の条件１及び条件２が満たされない検証２では、殆どの場合で処理液ずれ量が１０ｍｍを超えており、多くの場合で処理液ずれ量が２０ｍｍを超えていた。これらの検証１及び検証２の結果からも、上述の条件１及び条件２を満たすように第１の液吐出ノズル２１から処理液を吐出させることによって、処理液の跳ね返りや広がりを抑えることができ、酸化膜５０のうち狙った箇所を精度良くエッチングすることができることが分かる。 The inventor measures the etching amount of the oxide film 50 in association with the horizontal position while changing the discharge angle of the processing liquid from the first liquid discharge nozzle 21, and determines the etching amount of the oxide film 50 and the horizontal position. The relationship was evaluated. Specifically, verification 1 in which measurement is performed a plurality of times while changing the discharge angle of the processing liquid within a range that satisfies the above-described condition 1 and condition 2, and a process that does not satisfy the above-described condition 1 and / or condition 2 Verification 2 was performed in which the liquid discharge angle was changed and measurement was performed a plurality of times. As a result, in the verification 1 in which the above condition 1 and condition 2 are satisfied, in any case, “the innermost position on the oxide film 50 where the removal of the oxide film 50 was observed by the treatment liquid” and “the process concerned” The difference from the “position where the liquid landed on the oxide film 50” (hereinafter referred to as “processing liquid shift amount”) was generally within a range of 10 mm (millimeters). On the other hand, in the verification 2 in which the conditions other than the above-described conditions 1 and 2 are substantially the same as the above-described verification 1 and the above-described conditions 1 and 2 are not satisfied, in most cases, the amount of displacement of the processing liquid exceeds 10 mm. In many cases, the displacement of the processing liquid exceeded 20 mm. From the results of these verifications 1 and 2, it is possible to suppress the rebound and spread of the processing liquid by discharging the processing liquid from the first liquid discharge nozzle 21 so as to satisfy the above conditions 1 and 2. It can be seen that the targeted portion of the oxide film 50 can be etched with high accuracy.
　なお、処理液によりエッチングされたウエハＷの面は疎水化される。疎水化された面上に処理液膜を適切に形成するには、多量の処理液を供給したり、ウエハＷを高速に回転させたりすることが必要である。その一方で、上述の第１の工程Ｓ１では、ウエハＷの内側への処理液の液跳ねを防止する観点から、多量の処理液を供給したり、ウエハＷの回転速度を高速に設定したりすることが難しい。したがって、まず上述の第２の工程Ｓ２を行って、その後に上述の第１の工程Ｓ１を行う手法は、第１の工程Ｓ１のエッチング処理が不安定になるため、好ましくない。一方、第２の工程Ｓ２に先立って第１の工程Ｓ１が行われる図３に示す手法は、第１の工程Ｓ１及び第２の工程Ｓ２を安定的に行うことができるため、好ましい。 Note that the surface of the wafer W etched with the processing liquid is hydrophobized. In order to appropriately form the processing liquid film on the hydrophobic surface, it is necessary to supply a large amount of processing liquid or to rotate the wafer W at a high speed. On the other hand, in the first step S1 described above, from the viewpoint of preventing the processing liquid from splashing inside the wafer W, a large amount of processing liquid is supplied, or the rotation speed of the wafer W is set to a high speed. Difficult to do. Therefore, the method of first performing the second step S2 and then performing the first step S1 is not preferable because the etching process in the first step S1 becomes unstable. On the other hand, the method shown in FIG. 3 in which the first step S1 is performed prior to the second step S2 is preferable because the first step S1 and the second step S2 can be performed stably.
［変形例］
　本発明は、上述の実施形態及び変形例に限定されるものではなく、当業者が想到しうる種々の変形が加えられた各種態様も含みうるものであり、本発明によって奏される効果も上述の事項に限定されない。したがって、本発明の技術的思想及び趣旨を逸脱しない範囲で、特許請求の範囲及び明細書に記載される各要素に対して種々の追加、変更及び部分的削除が可能である。 [Modification]
The present invention is not limited to the above-described embodiments and modifications, and can include various aspects to which various modifications that can be conceived by those skilled in the art can be included. The effects achieved by the present invention are also described above. It is not limited to the matter of. Therefore, various additions, modifications, and partial deletions can be made to each element described in the claims and the specification without departing from the technical idea and spirit of the present invention.
　例えば、上述の実施形態ではウエハＷの表面側Ｆ１の酸化膜５０のみが処理液によるエッチングの対象となっていたが、ウエハＷの表面側Ｆ１に対する処理液及び／又はリンス液の供給とともにウエハＷの裏面側Ｆ２に対する処理液及び／又はリンス液の供給が行われてもよい。この場合、ウエハＷの裏面側Ｆ２に対する液の供給開始は、ウエハＷの表面側Ｆ１に対して液が既に供給されている状態で行われることが好ましい。これにより、ウエハＷの裏面側Ｆ２に供給された液が、表面側Ｆ１に回り込んでしまうことを、効果的に防ぐことができる。 For example, in the above-described embodiment, only the oxide film 50 on the front surface side F1 of the wafer W is an object to be etched by the processing liquid, but the wafer W is supplied together with the supply of the processing liquid and / or the rinsing liquid to the front surface side F1 of the wafer W. The processing liquid and / or the rinsing liquid may be supplied to the back surface side F2. In this case, it is preferable that the supply of the liquid to the rear surface side F2 of the wafer W is performed in a state where the liquid is already supplied to the front surface side F1 of the wafer W. Thereby, it can prevent effectively that the liquid supplied to the back surface side F2 of the wafer W wraps around to the surface side F1.
　例えば上述の第１の工程Ｓ１ではリンス液及び処理液がウエハＷの表面側Ｆ１の酸化膜５０に供給され、第２の工程では処理液がウエハＷの表面側Ｆ１の酸化膜５０に供給される。これらの第１の工程Ｓ１及び第２の工程Ｓ２のうち少なくともいずれか一方において、ウエハＷの裏面側Ｆ２にも処理液及び／又はリンス液が供給されてもよい。この場合、第１の工程Ｓ１及び第２の工程Ｓ２のうち少なくともいずれか一方における処理液がウエハＷの表面側Ｆ１に供給されている状態で、ウエハＷの裏面側Ｆ２に対する処理液及び／又はリンス液の供給が開始される。一例として、第１の工程Ｓ１では比較的多量（例えば１０００ｍｌ／ｍｉｎ）のリンス液をウエハＷの裏面側Ｆ２に供給してもよく、また第２の工程Ｓ２では比較的多量（例えば１０００ｍｌ／ｍｉｎ）の処理液をウエハＷの裏面側Ｆ２に形成された酸化膜に供給してもよい。なおウエハＷの裏面側Ｆ２に対する処理液及び／又はリンス液の供給は、表面側Ｆ１に設けられたノズル２１、２２及びバルブ２４、２９、３０と同様の構成を有するノズル及びバルブを裏面側Ｆ２に設けて、当該ノズルからウエハＷの裏面側Ｆ２に向けて処理液及び／又はリンス液を吐出させることで行うことができる。 For example, in the first step S1, the rinsing liquid and the processing liquid are supplied to the oxide film 50 on the front surface side F1 of the wafer W, and in the second process, the processing liquid is supplied to the oxide film 50 on the front surface side F1 of the wafer W. The In at least one of the first step S1 and the second step S2, the processing liquid and / or the rinsing liquid may be supplied also to the back surface side F2 of the wafer W. In this case, in the state in which the processing liquid in at least one of the first process S1 and the second process S2 is supplied to the front surface side F1 of the wafer W, and / or The supply of the rinse liquid is started. As an example, a relatively large amount (for example, 1000 ml / min) of rinsing liquid may be supplied to the back surface side F2 of the wafer W in the first step S1, and a relatively large amount (for example, 1000 ml / min) in the second step S2. ) May be supplied to the oxide film formed on the back surface side F2 of the wafer W. The supply of the processing liquid and / or the rinsing liquid to the back surface side F2 of the wafer W is performed using the nozzles and valves having the same configuration as the nozzles 21 and 22 and the valves 24, 29, and 30 provided on the front surface side F1. And the processing liquid and / or the rinsing liquid can be discharged from the nozzle toward the back surface side F2 of the wafer W.
　また、上述の処理液及びリンス液の具体的な組成も特に限定されず、ウエハＷ等の基板に形成された酸化膜５０等の膜を除去することができる液体を処理液として使用することが可能であり、そのような処理液を適切に洗い流すことができる液体をリンス液として使用することが可能である。また第１の液吐出ノズル２１から吐出される処理液と第２の液吐出ノズル２２から吐出される処理液とは、相互に同じ組成の液体であってもよいし、相互に異なる組成の液体であってもよい。またウエハＷの裏面側に供給される処理液は、第１の液吐出ノズル２１及び／又は第２の液吐出ノズル２２から吐出される処理液と同じ組成であってもよいし、異なる組成であってもよい。またウエハＷの裏面側に供給されるリンス液は、第２の液吐出ノズル２２から吐出されるリンス液と同じ組成であってもよいし、異なる組成であってもよい。 In addition, the specific composition of the processing liquid and the rinsing liquid described above is not particularly limited, and a liquid that can remove the film such as the oxide film 50 formed on the substrate such as the wafer W is used as the processing liquid. It is possible to use as the rinsing liquid a liquid that can properly wash away such a processing liquid. Further, the processing liquid discharged from the first liquid discharge nozzle 21 and the processing liquid discharged from the second liquid discharge nozzle 22 may be liquids having the same composition, or liquids having different compositions. It may be. Further, the processing liquid supplied to the back surface side of the wafer W may have the same composition as the processing liquid discharged from the first liquid discharge nozzle 21 and / or the second liquid discharge nozzle 22, or a different composition. There may be. Further, the rinsing liquid supplied to the back side of the wafer W may have the same composition as the rinsing liquid discharged from the second liquid discharge nozzle 22 or a different composition.
１　基板保持部
２　回転機構
４　液供給機構
５０　酸化膜
１００　液処理装置
１０１　コントローラ
Ｗ　ウエハ
Ｓ１　第１の工程
Ｓ２　第２の工程 DESCRIPTION OF SYMBOLS 1 Substrate holding | maintenance part 2 Rotation mechanism 4 Liquid supply mechanism 50 Oxide film 100 Liquid processing apparatus 101 Controller W Wafer S1 1st process S2 2nd process

Claims (10)

  1. 　中心部の膜より外周部の膜が厚い基板に対してエッチング液を供給して当該膜をエッチングする液処理方法であって、
    　基板を回転させながら外周部に形成された中心部より厚い膜にエッチング液を供給するとともに前記エッチング液が供給される位置よりも前記基板の中心側に前記エッチング液による前記膜のエッチングを阻害するエッチング阻害液を供給して前記外周部の膜をエッチングする第１の工程と、
    　前記第１の工程の後に、回転する前記基板にエッチング液を供給して予め設定された膜厚までエッチングする第２の工程と、を備える液処理方法。     A liquid processing method for etching a film by supplying an etchant to a substrate having a thicker outer peripheral film than a central film,
    While rotating the substrate, the etching solution is supplied to a film thicker than the central portion formed on the outer peripheral portion, and the etching of the film by the etching solution is hindered toward the center side of the substrate from the position where the etching solution is supplied. A first step of supplying an etching inhibitor to etch the outer peripheral film;
    And a second step of supplying an etching solution to the rotating substrate and etching to a preset film thickness after the first step.
  2. 　前記第２の工程では、前記基板のうち、前記第１の工程で前記エッチング液が供給されていた位置には前記エッチング液を供給せず、前記第１の工程で前記エッチング液が供給されていた位置よりも前記基板の中心側に前記エッチング液を供給する請求項１に記載の液処理方法。 In the second step, the etching solution is not supplied to the position of the substrate where the etching solution is supplied in the first step, and the etching solution is supplied in the first step. The liquid processing method according to claim 1, wherein the etching liquid is supplied to a center side of the substrate with respect to a position.
  3. 　前記第１の工程において、前記エッチング液の第１処理液吐出ノズルからの吐出方向が、前記基板が延在する方向に対して成す鋭角の角度αは、２０°≦α≦７０°を満たす請求項１又は２に記載の液処理方法。 In the first step, an acute angle α formed by a discharge direction of the etching liquid from the first treatment liquid discharge nozzle with respect to a direction in which the substrate extends satisfies 20 ° ≦ α ≦ 70 °. Item 3. The liquid treatment method according to Item 1 or 2.
  4. 　前記第１の工程において、前記エッチング液の進路が前記基板上に投影されて形成される投影進行路の方向と、当該投影進行路の延長線と前記基板の最外周部との交点における前記基板の接線の方向とによって形成される鋭角の角度βは、４０°≦β≦８０°を満たす請求項１～３のいずれか一項に記載の液処理方法。 In the first step, the substrate at the intersection of the direction of the projection path formed by projecting the path of the etching solution onto the substrate, and the extension line of the projection path and the outermost periphery of the substrate The liquid processing method according to any one of claims 1 to 3, wherein an acute angle β formed by the direction of the tangent line satisfies 40 ° ≦ β ≦ 80 °.
  5. 　前記第１の工程は、前記エッチング阻害液の供給が開始された後に、前記エッチング液の供給が開始される請求項１～４のいずれか一項に記載の液処理方法。 The liquid processing method according to any one of claims 1 to 4, wherein in the first step, the supply of the etching solution is started after the supply of the etching inhibitor is started.
  6. 　前記第１の工程において、前記エッチング阻害液及び前記エッチング液は、前記基板の表面側に供給され、
    　前記第２の工程において、前記エッチング液は、前記基板の前記表面側に供給され、
    　前記第１の工程及び前記第２の工程のうち少なくともいずれか一方において、前記基板の裏面側に第２の液が供給され、
    　前記第２の液は、前記第１の工程及び前記第２の工程のうち少なくともいずれか一方における前記エッチング液が前記基板の前記表面側に供給されている状態で、前記基板の前記裏面側に供給される請求項１～５のいずれか一項に記載の液処理方法。     In the first step, the etching inhibitor and the etchant are supplied to the surface side of the substrate,
    In the second step, the etching solution is supplied to the surface side of the substrate,
    In at least one of the first step and the second step, a second liquid is supplied to the back side of the substrate,
    The second liquid is applied to the back surface side of the substrate in a state where the etching liquid in at least one of the first step and the second step is supplied to the front surface side of the substrate. The liquid treatment method according to any one of claims 1 to 5, which is supplied.
  7. 　前記第２の工程における前記エッチング液の単位時間当たりの供給量は、前記第１の工程における前記エッチング液の単位時間当たりの供給量よりも大きい請求項１～６のいずれか一項に記載の液処理方法。 The supply amount of the etching solution per unit time in the second step is larger than the supply amount of the etching solution per unit time in the first step. Liquid processing method.
  8. 　前記第２の工程における前記基板の回転数は、前記第１の工程における前記基板の回転数よりも速い請求項１～７のいずれか一項に記載の液処理方法。 The liquid processing method according to any one of claims 1 to 7, wherein the number of rotations of the substrate in the second step is faster than the number of rotations of the substrate in the first step.
  9. 　前記エッチング阻害液は純水である請求項１～８のいずれか一項に記載の液処理方法。 The liquid processing method according to any one of claims 1 to 8, wherein the etching inhibitor is pure water.
  10. 　中心部の膜より外周部の膜が厚い基板に対してエッチング液を供給して膜をエッチングする液処理装置であって、
    　基板を回転可能に保持する基板保持部と、
    　前記基板保持部を回転させる回転機構と、
    　前記基板保持部に保持される前記基板に形成された膜に液を供給する液供給機構と、
    　少なくとも前記液供給機構を制御するコントローラと、を備え、
    　前記コントローラは、
    　前記基板保持部により保持されて回転する前記基板の前記膜に対して前記液供給機構からエッチング液及びエッチング阻害液を供給する第１の工程であって、前記基板を回転させながら外周部に形成された中心部より厚い膜にエッチング液を供給するとともに前記エッチング液が供給される位置よりも前記基板の中心側に前記エッチング液による前記膜のエッチングを阻害するエッチング阻害液を供給して前記外周部の膜をエッチングする第１の工程と、
    　前記第１の工程の後に、回転する前記基板にエッチング液を供給して予め設定された膜厚までエッチングする第２の工程と、を行う液処理装置。     A liquid processing apparatus that etches a film by supplying an etchant to a substrate having a thicker outer peripheral film than a central film,
    A substrate holder for rotatably holding the substrate;
    A rotation mechanism for rotating the substrate holder;
    A liquid supply mechanism for supplying a liquid to a film formed on the substrate held by the substrate holding unit;
    A controller for controlling at least the liquid supply mechanism,
    The controller is
    A first step of supplying an etchant and an etch inhibitor from the liquid supply mechanism to the film of the substrate that is held and rotated by the substrate holder, and is formed on the outer periphery while rotating the substrate. Supplying an etchant to a film thicker than the central portion and supplying an etchant inhibiting the etching of the film by the etchant toward the center of the substrate from the position where the etchant is supplied. A first step of etching part of the film;
    A liquid processing apparatus for performing, after the first step, a second step of supplying an etching liquid to the rotating substrate and etching to a preset film thickness.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020038888A (en) * 2018-09-03 2020-03-12 株式会社プレテック Etching device and etching method
WO2020158210A1 (en) * 2019-01-30 2020-08-06 信越半導体株式会社 Etching method
JP2021012915A (en) * 2019-07-04 2021-02-04 東京エレクトロン株式会社 Etching apparatus and etching method
JPWO2021124900A1 (en) * 2019-12-16 2021-06-24
JP2021106237A (en) * 2019-12-27 2021-07-26 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269178A (en) * 1999-03-15 2000-09-29 Nec Corp Method and apparatus for etching removal as well as method and apparatus for cleaning
JP2002170808A (en) * 2000-12-04 2002-06-14 Dainippon Screen Mfg Co Ltd Bevel etching apparatus
JP2003318154A (en) * 2002-04-25 2003-11-07 Dainippon Screen Mfg Co Ltd Method and device for etching substrate
JP2004335923A (en) * 2003-05-12 2004-11-25 Sony Corp Etching method and etching device
JP2007266302A (en) * 2006-03-28 2007-10-11 Tokyo Electron Ltd Liquid processing apparatus, and liquid processing method, as well as computer-readable storage medium
JP2010010679A (en) * 2008-06-24 2010-01-14 Semes Co Ltd Substrate processing device and method for selectively etching substrate surface
JP2010040729A (en) * 2008-08-05 2010-02-18 Sumco Corp Method for manufacturing soi wafer
JP2016066740A (en) * 2014-09-25 2016-04-28 東京エレクトロン株式会社 Substrate liquid processing method, substrate liquid processing apparatus, and storage medium

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269178A (en) * 1999-03-15 2000-09-29 Nec Corp Method and apparatus for etching removal as well as method and apparatus for cleaning
JP2002170808A (en) * 2000-12-04 2002-06-14 Dainippon Screen Mfg Co Ltd Bevel etching apparatus
JP2003318154A (en) * 2002-04-25 2003-11-07 Dainippon Screen Mfg Co Ltd Method and device for etching substrate
JP2004335923A (en) * 2003-05-12 2004-11-25 Sony Corp Etching method and etching device
JP2007266302A (en) * 2006-03-28 2007-10-11 Tokyo Electron Ltd Liquid processing apparatus, and liquid processing method, as well as computer-readable storage medium
JP2010010679A (en) * 2008-06-24 2010-01-14 Semes Co Ltd Substrate processing device and method for selectively etching substrate surface
JP2010040729A (en) * 2008-08-05 2010-02-18 Sumco Corp Method for manufacturing soi wafer
JP2016066740A (en) * 2014-09-25 2016-04-28 東京エレクトロン株式会社 Substrate liquid processing method, substrate liquid processing apparatus, and storage medium

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020038888A (en) * 2018-09-03 2020-03-12 株式会社プレテック Etching device and etching method
JP7141892B2 (en) 2018-09-03 2022-09-26 株式会社プレテック Etching apparatus and etching method
WO2020158210A1 (en) * 2019-01-30 2020-08-06 信越半導体株式会社 Etching method
JP2021012915A (en) * 2019-07-04 2021-02-04 東京エレクトロン株式会社 Etching apparatus and etching method
JP7309485B2 (en) 2019-07-04 2023-07-18 東京エレクトロン株式会社 Etching apparatus and etching method
JPWO2021124900A1 (en) * 2019-12-16 2021-06-24
WO2021124900A1 (en) * 2019-12-16 2021-06-24 東京エレクトロン株式会社 Substrate processing method
KR20220115980A (en) 2019-12-16 2022-08-19 도쿄엘렉트론가부시키가이샤 Substrate processing method
JP7357693B2 (en) 2019-12-16 2023-10-06 東京エレクトロン株式会社 Substrate processing method
JP2021106237A (en) * 2019-12-27 2021-07-26 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method
JP7386700B2 (en) 2019-12-27 2023-11-27 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method

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