WO2018072660A1 - Terahertz time-domain reflectometry system - Google Patents

Terahertz time-domain reflectometry system Download PDF

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Publication number
WO2018072660A1
WO2018072660A1 PCT/CN2017/106248 CN2017106248W WO2018072660A1 WO 2018072660 A1 WO2018072660 A1 WO 2018072660A1 CN 2017106248 W CN2017106248 W CN 2017106248W WO 2018072660 A1 WO2018072660 A1 WO 2018072660A1
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signal
chip
time domain
terahertz time
photoconductive antenna
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PCT/CN2017/106248
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French (fr)
Chinese (zh)
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李辰
丁庆
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深圳市太赫兹科技创新研究院
深圳市太赫兹***设备有限公司
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Publication of WO2018072660A1 publication Critical patent/WO2018072660A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2839—Fault-finding or characterising using signal generators, power supplies or circuit analysers
    • G01R31/2841—Signal generators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2896—Testing of IC packages; Test features related to IC packages
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/08—Locating faults in cables, transmission lines, or networks
    • G01R31/11—Locating faults in cables, transmission lines, or networks using pulse reflection methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
    • G01R31/70—Testing of connections between components and printed circuit boards

Definitions

  • the present invention relates to the field of terahertz technology, and in particular to a terahertz time domain reflection system.
  • Failure analysis for semiconductor integrated circuits includes: use of scanning acoustic microscopy imaging techniques for non-destructive detection of cracks and delamination during packaging and assembly stages; inspection of external package damage using X-ray microscopy imaging techniques; use of electrical time domain reflections
  • the instrument performs circuit connection performance detection and the like. Among them, the circuit's on/off, short circuit, and misconnection are common failure consequences.
  • an electrical time domain reflectometer can send electrical pulses into a transmission line and read its return pulse to achieve fault determination and positioning.
  • current time domain reflectometers can achieve maximum millimeter resolution. Not suitable for micron-level fault analysis, failure to detect faults in increasingly small and complex chip packages.
  • a terahertz time domain reflection system for detecting semiconductor integrated circuit failures including:
  • a pulsed laser for emitting a pulsed laser
  • a beam splitting device for splitting the pulsed laser into pump light and excitation light
  • An optical delay line device disposed in a direction in which the excitation light propagates for adjusting a time delay of the pump light and the excitation light;
  • An electrical pulse transceiver device wherein the electrical pulse transceiver device is connected to a chip to be tested, wherein the pump light and the excitation light are both focused on the electrical pulse transceiver device, and the electrical pulse transceiver device is configured to generate a high frequency electrical pulse signal Sending to the chip to be tested, and receiving a high frequency electric pulse signal reflected from the chip to be tested to form a terahertz time domain reflection signal, and analyzing fault information of the chip to be tested.
  • the electrical pulse transceiving device comprises:
  • the pump light is focused on the first photoconductive antenna for generating a high frequency electric pulse signal and sent to the chip to be tested;
  • a probe which is respectively connected to the first photoconductive antenna, the second photoconductive antenna, and the chip to be tested;
  • the signal analysis module is connected to the second photoconductive antenna for collecting and processing the reflected high frequency electric pulse signal, forming the terahertz time domain reflection signal and analyzing the fault information of the chip to be tested.
  • the signal analysis module includes a signal acquisition module and a signal processing module, and the second photoconductive antenna, the signal acquisition module, and the signal processing module are electrically connected in sequence;
  • the signal acquisition module is configured to perform acquisition and amplification processing on the reflected high-frequency electric pulse signal
  • the signal processing module is configured to form the terahertz time domain reflection signal and analyze fault information of the chip to be tested.
  • the electrical pulse transceiver further includes a DC biasing module coupled to the first photoconductive antenna for providing a DC bias to the first photoconductive antenna Voltage.
  • the electrical pulse transceiver further includes a current amplification module coupled to the first photoconductive antenna for amplifying the high frequency electrical pulse signal.
  • the electrical pulse transceiving device further includes a frequency correction module coupled to the first photoconductive antenna for monitoring and correcting the indicated high frequency electrical pulse signal.
  • the electrical pulse transceiver device further includes a transmission line, one end of the transmission line is respectively connected to the first photoconductive antenna and the second photoconductive antenna, and the other end of the transmission line Connected to the probe.
  • an optical fiber is further included, and the optical fiber is sequentially connected to the pulse laser, the beam splitting device, and the optical delay line device for transmitting the pulsed laser light.
  • the beam splitting device is a fiber coupler, an input end of the fiber coupler is connected to the optical fiber, and a first output end of the fiber coupler is used to output the pump light.
  • the second output of the fiber coupler is for outputting the excitation light.
  • the beam splitting device is a beam splitter.
  • the terahertz time domain reflection system can quickly obtain the change of the terahertz time domain reflection signal of the chip to be tested within a certain time delay, that is, the information of the distance of the high frequency electric pulse signal traveling along the lead in the chip to be tested can be obtained. Due to the connectivity failure of the open circuit or short circuit of the chip to be tested, different impedance changes may occur, which in turn may cause the terahertz time domain reflection signal to change. For example, when the lead is open, the terahertz time domain reflection signal will exhibit a positive reflection peak at a corresponding distance, and its peak value is related to the impedance, so that the connectivity fault in the chip to be tested can be located by the change of the terahertz time domain reflection signal.
  • the impedance of the leads in the chip to be tested can also be measured. Since the terahertz time domain reflection system uses ultra-fast laser to excite high-frequency electric pulse signals, the high-frequency electric pulse signal has a very short rise time, and the micro-level detection accuracy can be achieved compared with the electric time domain reflectometer, thereby greatly improving the detection signal. Noise ratio provides high accuracy and high sensitivity fault analysis for complex packages.
  • 1 is an optical path diagram of a terahertz time domain reflection system in an embodiment
  • FIG. 2 is a structural block diagram of an electrical pulse transceiver device in a terahertz time domain reflection system in an embodiment.
  • pulse laser 10 pulse laser 10, beam splitting device 20, optical fiber 30, optical delay line device 40, first photoconductive antenna 51, second photoconductive antenna 52, signal analysis module 53, DC bias module 54, transmission line 55 , probe 56, chip 60 to be tested.
  • Terahertz radiation refers to electromagnetic radiation with a frequency between 0.1 THz and 10 THz.
  • the terahertz time domain reflection system combines photoelectric effect and time domain reflection technology to achieve high resolution fault detection in picosecond (ps) magnitude time sloshing.
  • Time sway is time jitter, which indicates the slight deviation of the signal period of the pulse signal from the ideal period, which shows the degree of pulse hopping to a certain extent.
  • FIG. 1 is an optical path diagram of a terahertz time domain reflection system in an embodiment
  • FIG. 2 is a structural frame diagram of an electrical pulse transceiver device in a terahertz time domain reflection system in an embodiment.
  • the terahertz time domain reflection system is used to detect semiconductor integrated circuit failures, including the pulsed laser 10, the beam splitting device 20, the optical delay line device 40, and the electrical pulse transceiver device 50.
  • the ultrashort pulse laser light emitted from the pulse laser 10 is split by the pulse laser by the beam splitting device 20.
  • One pulsed laser directly forms the pump light, and the other beam forms an excitation light via the optical delay line device 40, wherein the optical delay line device 40 is used to increase the time delay of the pump light and the excitation light.
  • the ultrashort pulse laser excitation electric pulse transceiver device 50 generates and receives a high frequency electric pulse signal, the frequency of the high frequency electric pulse signal is on the order of picoseconds (ps), and the high frequency electric pulse signal is a current signal, and the intensity of the current signal For the Naan (nA) level.
  • the generated high frequency electric pulse signal is sent to the chip to be tested 60 for fault detection.
  • the change of the terahertz time domain reflection signal of the chip under test 60 within a certain time delay can be quickly obtained, that is, the high frequency electric pulse signal can be transmitted along the lead in the chip to be tested 60.
  • Distance information Due to the connectivity failure of the open circuit or short circuit of the chip to be tested 60, different impedance changes may be caused, and then the terahertz time domain reflection signal is changed. For example, when the lead is open, the terahertz time domain reflection signal will exhibit a positive reflection peak at a corresponding distance, and its peak value is related to the impedance. Therefore, the connectivity fault of the chip 60 to be tested can be located by the change of the terahertz time domain reflection signal. And the determination, the impedance of the lead in the chip to be tested 60 can also be measured.
  • the pulsed laser 10 is a femtosecond pulse laser 10 for transmitting ultrashort pulse laser, in which ultrashort
  • the pulsed laser is pulsed light of less than 1 picosecond (ps).
  • the terahertz time domain reflection system further includes an optical fiber 30 that in turn connects the pulsed laser 10, the beam splitting device 20, and the optical delay line device 40 for transmitting the pulsed laser light.
  • the pulse laser 10 and the beam splitting device 20, the beam splitting device 20 and the optical delay line device 40 are both transmitted by the optical fiber 30, and the ultrashort pulse laser is output through the optical fiber 30, which can provide transmission efficiency, reduce energy loss, and improve the whole System stability.
  • the beam splitting device 20 is a fiber coupler 20, the input end of the fiber coupler 20 is connected to the optical fiber 30, and the first output end of the fiber coupler 20 is connected to the optical fiber 30 for outputting the pump light.
  • the second output of the fiber coupler 20 is coupled to the optical fiber 30 for outputting the excitation light.
  • the beam splitting device 20 may also be a beam splitter mirror, which splits the ultrashort pulse laser into two.
  • the electrical pulse transceiver device 50 is connected to the chip to be tested 60.
  • the pump light and the excitation light are both focused on the electrical pulse transceiver device 50.
  • the electrical pulse transceiver device 50 is used to generate Sending a high frequency electric pulse signal to the chip to be tested 60, and receiving a high frequency electric pulse signal reflected from the chip to be tested 60 to form a terahertz time domain reflection signal, and analyzing fault information of the chip to be tested, Wherein, the high frequency electric pulse signal is a nano level current signal.
  • the electrical pulse transceiver device 50 includes a first photoconductive antenna 51, a second photoconductive antenna 52, a signal analysis module 53, a transmission line 55, and a probe 56.
  • the pump light output from the fiber coupler 20 is freely spatially focused onto the first photoconductive antenna 51 (transmitting the photoconductive antenna) and excited to generate a high frequency electrical pulse signal.
  • the excitation light output from the optical delay line device 40 is spatially focused to the second photoconductive antenna 52 (receiving the photoconductive antenna).
  • the high-frequency electric pulse signal is sent to the chip to be tested 60 via the transmission line 55 and the probe 56, and is transmitted in the chip 60 to be tested.
  • the transmission line 55 is a high-frequency high-speed transmission line 55 having low impedance and low loss.
  • the tip of the probe 56 will be placed directly on the pin of the semiconductor chip to be tested to perform fault detection.
  • the high frequency electric pulse signal reflected signal from the chip to be tested 60 is reflected into the second photoconductive antenna 52 via the probe 56 and the transmission line 55, and is converted into a current in the photoconductive body in the second photoconductive antenna 52.
  • the signal is output to the signal analysis module 53, and the reflected high-frequency electric pulse signal is collected and processed by the signal analysis module 53 to form the terahertz time domain reflection signal.
  • the signal analysis module 53 includes a signal acquisition module 531 and a signal processing module 532.
  • the second photoconductive antenna 52, the signal acquisition module 531, and the signal processing module 532 are electrically connected in sequence.
  • the signal acquisition module 531 includes a signal amplifying unit, a phase lock amplifying unit and a signal collecting unit, and can perform acquisition and amplification processing on the reflected high frequency electric pulse signal.
  • the signal processing module 532 and the fault analysis unit can analyze the fault information of the chip under test 60 according to the terahertz time domain reflection signal.
  • the electrical pulse transceiver 50 further includes a DC biasing module 54 coupled to the first photoconductive antenna 51 for providing a DC bias voltage to the first photoconductive antenna 51.
  • the electric pulse transmitting and receiving device 50 further includes a current amplifying module 57.
  • the current amplifying module 57 is connected to the first photoconductive antenna 51 for performing a certain degree of amplification processing on the weak high frequency electric pulse signal in the transmission line 55.
  • the electrical pulse transceiver device 50 further includes a frequency correction module 58 coupled to the first photoconductive antenna 51.
  • the output of the frequency correction module 58 is electrically coupled to the probe 56 via a transmission line 55.
  • Frequency correction module 58 is used to monitor and correct the high frequency electrical pulse signals shown. In an embodiment, if the frequency correction of the weak high frequency electrical pulse signal is difficult, the frequency correction module 58 is disposed between the current amplification module 57 and the transmission line 55.
  • the substrate of the first photoconductive antenna 51 can generate a freely moving electron-hole pair and form a small current under the action of the DC bias module 54.
  • the lead antenna 51 has a characteristic of high resistance and low conductance. Since the pump light is composed of an ultrashort pulse laser, under the action of the ultrashort pulse laser, the first photoconductive antenna 51 generates repeatedly moving carriers and rapidly changing currents, so that the conductivity is greatly increased, thereby forming a picosecond amount. Level high frequency electrical pulse signal.
  • the high-frequency electric pulse signal is sent to the chip to be tested 60, and the high-frequency electric pulse signal forms a picosecond-level reflective high-frequency electric pulse signal at the occurrence of the connection failure, and enters the second photoconductive via the probe 56 and the transmission line 55.
  • the antenna 52 forms a high frequency instantaneous potential difference in the second photoconductive antenna 52. Under the illumination of the excitation light, the substrate of the second photoconductive antenna 52 can also generate freely moving electron-hole pairs, and the second photoconductive antenna 52 is instantaneously guided by the high frequency instantaneous potential difference and the ultrashort pulse of the excitation light.
  • the instantaneous photocurrent is generated and output to the signal analysis module 53 to form a transient terahertz time domain reflection signal.
  • a terahertz time domain reflection signal with different time delays that is, a change in the terahertz time domain reflection signal over a period of time.
  • the time delay of changing the pump light and the excitation light is changed, thereby exciting the first photoconductive antenna 51 to perform non-slosh equivalent sampling of the terahertz time domain reflected signal in different time delays, and realizing the terahertz time domain reflected signal to be delayed for a period of time. Reconstruction of changes within.
  • the terahertz time-domain reflected signal that is, information on the distance traveled by the high-frequency electric pulse signal along the lead in the chip to be tested 60 can be obtained, and the time delay, phase, and electric pulse reflection intensity of the fault can be known. Determine the location, type, and impedance variation of the connected chip leads.
  • the terahertz time domain reflection system is used for fault detection of semiconductor integrated circuits, and the maximum measurement length is up to 150 mm; the highest measurement accuracy is less than 5 micrometers.
  • the maximum measurement length mainly depends on the attenuation of the high-frequency electric pulse signal in the transmission line 55, the chip to be tested 60, and the electrical pulse transceiver module, and the maximum time delay of the optical delay line device 40 for the ultrashort pulse laser.
  • the intensity of the high-frequency electric pulse signal (current) signal is in the nanoampere (nA) level, the signal is relatively weak, and there is attenuation in the transmission line 55 and the lead, and the maximum measurement length is defined as the high-frequency electric pulse signal. The distance traveled in the leads.
  • the highest measurement accuracy is mainly determined by the pulse rise time of the ultrashort laser pulse emitted by the pulse laser 10.
  • the pulse rise time of the ultrashort laser pulse is less than 6 picoseconds (ps), and also with the terahertz time domain reflection.
  • the signal to noise ratio of the signal acquisition is related.
  • the terahertz time domain reflection system uses ultra-fast laser to excite high-frequency electric pulse signals, the high-frequency electric pulse signal has a very short rise time, and the micro-level detection accuracy can be achieved compared with the electric time domain reflectometer, thereby greatly improving the detection signal.
  • Noise ratio provides high accuracy and high sensitivity fault analysis for complex packages.

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Abstract

A terahertz time-domain reflectometry system, for use in detecting a fault in a semiconductor integrator circuit, comprising a pulsed laser (10), a beam splitting device (20), an optical delay line device (40), and an electric pulse transceiver (50). An ultra-short pulsed laser excites the electric pulse transceiver (50) to produce and receive a high-frequency electric pulse signal, the frequency of the high-frequency electric pulse signal being in the picosecond order of magnitude, and the high-frequency electric pulse signal is a current signal. The high-frequency electric pulse signal produced is introduced into a chip to be tested (60) for fault detection. By means of the terahertz time-domain reflectometry system, a change in a terahertz time-domain reflected signal of the test chip (60) within a certain time delay can be acquired rapidly, that is, information on the distance over which the high-frequency electric pulse signal propagated along a lead in the test chip (60) can be acquired, a connectivity fault in the test chip (60) can be located and determined on the basis of the change in the terahertz time-domain reflected signal, and the resistance of the lead in the test chip (60) can also be measured.

Description

太赫兹时域反射***Terahertz time domain reflection system 技术领域Technical field
本发明涉及太赫兹技术领域，特别是涉及太赫兹时域反射***。The present invention relates to the field of terahertz technology, and in particular to a terahertz time domain reflection system.
背景技术Background technique
在半导体集成电路的生产制造中，为保证出厂芯片的功能完整性，需在出厂前进行功能及性能的测试。芯片主要依靠大规模生产，同样也需要大规模的自动化检测。近些年来，由于技术的更新，便携式设备的流行，封装尺寸的小型化，测试半导体芯片的复杂性加大，检测流程需要针对不同封装进行定制，因此，大规模自动化的故障分析面临越来越多的挑战性。In the manufacture of semiconductor integrated circuits, in order to ensure the functional integrity of the factory chip, it is necessary to test the function and performance before leaving the factory. The chip relies mainly on mass production and also requires large-scale automated testing. In recent years, due to the update of technology, the popularity of portable devices, the miniaturization of package sizes, the complexity of testing semiconductor chips, and the need to customize the inspection process for different packages, large-scale automated failure analysis is increasingly faced. More challenging.
针对半导体集成电路的故障分析包括：在封装和组装阶段使用扫描声学显微成像技术进行裂缝和分层的无损探测；使用X-光显微成像技术进行外部封装损坏的检查；使用电时域反射仪进行电路连通性能的检测等。其中，电路的通断、短路、错接是常见的故障后果。在半导体集成电路的封装阶段，电时域反射仪能够将电脉冲送入传输线并读取其返回脉冲，从而实现故障的判断和定位，然而目前电时域反射仪可实现最高毫米级分辨率，不适用于微米级别的故障分析，无法对日益小型复杂化的芯片封装进行故障检测。Failure analysis for semiconductor integrated circuits includes: use of scanning acoustic microscopy imaging techniques for non-destructive detection of cracks and delamination during packaging and assembly stages; inspection of external package damage using X-ray microscopy imaging techniques; use of electrical time domain reflections The instrument performs circuit connection performance detection and the like. Among them, the circuit's on/off, short circuit, and misconnection are common failure consequences. In the packaging stage of a semiconductor integrated circuit, an electrical time domain reflectometer can send electrical pulses into a transmission line and read its return pulse to achieve fault determination and positioning. However, current time domain reflectometers can achieve maximum millimeter resolution. Not suitable for micron-level fault analysis, failure to detect faults in increasingly small and complex chip packages.
发明内容Summary of the invention
基于此，有必要针对上述问题，提供一种可以对半导体集成电路进行高准确率、高灵敏度故障分析的太赫兹时域反射***。Based on this, it is necessary to provide a terahertz time domain reflection system capable of performing high-accuracy and high-sensitivity failure analysis on a semiconductor integrated circuit in response to the above problems.
一种太赫兹时域反射***，用于对半导体集成电路故障进行检测，包括：A terahertz time domain reflection system for detecting semiconductor integrated circuit failures, including:
脉冲激光器，用于发射脉冲激光；a pulsed laser for emitting a pulsed laser;
分束装置，用于将所述脉冲激光分束为泵浦光和激发光；a beam splitting device for splitting the pulsed laser into pump light and excitation light;
光学延迟线装置，设置在所述激发光传播的方向上，用于调节所述泵浦光和所述激发光的时间延时； An optical delay line device disposed in a direction in which the excitation light propagates for adjusting a time delay of the pump light and the excitation light;
电脉冲收发装置，所述电脉冲收发装置与待测芯片连接，所述泵浦光和激发光均聚焦在所述电脉冲收发装置上，所述电脉冲收发装置用于产生高频电脉冲信号发送至所述待测芯片，并接收来自所述待测芯片反射的高频电脉冲信号形成太赫兹时域反射信号，并分析所述待测芯片的故障信息。An electrical pulse transceiver device, wherein the electrical pulse transceiver device is connected to a chip to be tested, wherein the pump light and the excitation light are both focused on the electrical pulse transceiver device, and the electrical pulse transceiver device is configured to generate a high frequency electrical pulse signal Sending to the chip to be tested, and receiving a high frequency electric pulse signal reflected from the chip to be tested to form a terahertz time domain reflection signal, and analyzing fault information of the chip to be tested.
在其中一个实施例中，所述电脉冲收发装置包括：In one embodiment, the electrical pulse transceiving device comprises:
第一光电导天线，所述泵浦光聚焦在所述第一光电导天线上，用于产生高频电脉冲信号并输送至所述待测芯片；a first photoconductive antenna, the pump light is focused on the first photoconductive antenna for generating a high frequency electric pulse signal and sent to the chip to be tested;
第二光电导天线，所述激发光聚焦在所述第二光电导天线上，用于接收来自所述待测芯片反射的高频电脉冲信号；a second photoconductive antenna, wherein the excitation light is focused on the second photoconductive antenna for receiving a high frequency electric pulse signal reflected from the chip to be tested;
探针，分别与所述第一光电导天线、第二光电导天线、待测芯片连接；a probe, which is respectively connected to the first photoconductive antenna, the second photoconductive antenna, and the chip to be tested;
信号分析模组，与所述第二光电导天线连接，用于对反射的高频电脉冲信号进行采集处理，形成所述太赫兹时域反射信号并分析所述待测芯片的故障信息。The signal analysis module is connected to the second photoconductive antenna for collecting and processing the reflected high frequency electric pulse signal, forming the terahertz time domain reflection signal and analyzing the fault information of the chip to be tested.
在其中一个实施例中，所述信号分析模组包括信号采集模块和信号处理模块，所述第二光电导天线、信号采集模块、信号处理模块依次电连接；In one embodiment, the signal analysis module includes a signal acquisition module and a signal processing module, and the second photoconductive antenna, the signal acquisition module, and the signal processing module are electrically connected in sequence;
所述信号采集模块用于对反射的高频电脉冲信号进行采集放大处理；The signal acquisition module is configured to perform acquisition and amplification processing on the reflected high-frequency electric pulse signal;
所述信号处理模块用于形成所述太赫兹时域反射信号并分析所述待测芯片的故障信息。The signal processing module is configured to form the terahertz time domain reflection signal and analyze fault information of the chip to be tested.
在其中一个实施例中，所述电脉冲收发装置还包括直流偏置模块，所述直流偏置模块与所述第一光电导天线连接，用于为所述第一光电导天线提供直流偏置电压。In one embodiment, the electrical pulse transceiver further includes a DC biasing module coupled to the first photoconductive antenna for providing a DC bias to the first photoconductive antenna Voltage.
在其中一个实施例中，所述电脉冲收发装置还包括电流放大模块，所述电流放大模块与所述第一光电导天线连接，用于所述高频电脉冲信号进行放大处理。In one embodiment, the electrical pulse transceiver further includes a current amplification module coupled to the first photoconductive antenna for amplifying the high frequency electrical pulse signal.
在其中一个实施例中，所述电脉冲收发装置还包括频率校正模块，所述频率校正模块与所述第一光电导天线连接，用于监测和校正所示高频电脉冲信号。In one embodiment, the electrical pulse transceiving device further includes a frequency correction module coupled to the first photoconductive antenna for monitoring and correcting the indicated high frequency electrical pulse signal.
在其中一个实施例中，所述电脉冲收发装置还包括传输线，所述传输线的一端分别与所述第一光电导天线、第二光电导天线连接，所述传输线的另一端 与所述探针连接。In one embodiment, the electrical pulse transceiver device further includes a transmission line, one end of the transmission line is respectively connected to the first photoconductive antenna and the second photoconductive antenna, and the other end of the transmission line Connected to the probe.
在其中一个实施例中，还包括光纤，所述光纤依次连接所述脉冲激光器、分束装置、光学延迟线装置，用于传输所述脉冲激光。In one embodiment, an optical fiber is further included, and the optical fiber is sequentially connected to the pulse laser, the beam splitting device, and the optical delay line device for transmitting the pulsed laser light.
在其中一个实施例中，所述分束装置为光纤耦合器，所述光纤耦合器的输入端与所述光纤连接，所述光纤耦合器的第一输出端用于输出所述泵浦光，所述光纤耦合器的第二输出端用于输出所述激发光。In one embodiment, the beam splitting device is a fiber coupler, an input end of the fiber coupler is connected to the optical fiber, and a first output end of the fiber coupler is used to output the pump light. The second output of the fiber coupler is for outputting the excitation light.
在其中一个实施例中，所述分束装置为分束镜。In one of the embodiments, the beam splitting device is a beam splitter.
上述太赫兹时域反射***可以快速获得待测芯片在一定时间延迟内的太赫兹时域反射信号的变化，也即可以获得高频电脉冲信号在待测芯片中沿引线传播的距离的信息。由于待测芯片的引线开路、短路等连通性故障会引起阻抗的不同变化，继而使太赫兹时域反射信号变化。例如引线中开路时，太赫兹时域反射信号会在对应的距离呈现正反射峰，其峰值与阻抗有关，因此可通过太赫兹时域反射信号的变化，对待测芯片中连通性故障进行定位和判定，也可以对待测芯片中引线的阻抗进行测量。由于太赫兹时域反射***使用超快激光激发高频电脉冲信号，该高频电脉冲信号上升时间极短，相比电时域反射仪可达到微米级别的检测精度，大大提升了检测的信噪比，为复杂封装提供高准确率、高灵敏度的故障分析。The terahertz time domain reflection system can quickly obtain the change of the terahertz time domain reflection signal of the chip to be tested within a certain time delay, that is, the information of the distance of the high frequency electric pulse signal traveling along the lead in the chip to be tested can be obtained. Due to the connectivity failure of the open circuit or short circuit of the chip to be tested, different impedance changes may occur, which in turn may cause the terahertz time domain reflection signal to change. For example, when the lead is open, the terahertz time domain reflection signal will exhibit a positive reflection peak at a corresponding distance, and its peak value is related to the impedance, so that the connectivity fault in the chip to be tested can be located by the change of the terahertz time domain reflection signal. It is determined that the impedance of the leads in the chip to be tested can also be measured. Since the terahertz time domain reflection system uses ultra-fast laser to excite high-frequency electric pulse signals, the high-frequency electric pulse signal has a very short rise time, and the micro-level detection accuracy can be achieved compared with the electric time domain reflectometer, thereby greatly improving the detection signal. Noise ratio provides high accuracy and high sensitivity fault analysis for complex packages.
附图说明DRAWINGS
图1为一实施例中太赫兹时域反射***的光路图；1 is an optical path diagram of a terahertz time domain reflection system in an embodiment;
图2为一实施例中太赫兹时域反射***中电脉冲收发装置的结构框架图。2 is a structural block diagram of an electrical pulse transceiver device in a terahertz time domain reflection system in an embodiment.
附图标记：脉冲激光器10、分束装置20、光纤30、光学延迟线装置40、第一光电导天线51、第二光电导天线52、信号分析模组53、直流偏置模块54、传输线55、探针56、待测芯片60。Reference numerals: pulse laser 10, beam splitting device 20, optical fiber 30, optical delay line device 40, first photoconductive antenna 51, second photoconductive antenna 52, signal analysis module 53, DC bias module 54, transmission line 55 , probe 56, chip 60 to be tested.
具体实施方式detailed description
为了便于理解本发明，下面将参照相关附图对发明进行更全面的描述。附图中给出了发明的较佳实施例。但是，本发明可以以许多不同的形式来实现， 并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。In order to facilitate the understanding of the present invention, the invention will be described more fully hereinafter with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention can be implemented in many different forms. It is not limited to the embodiments described herein. Rather, these embodiments are provided so that the understanding of the present disclosure will be more fully understood.
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。All technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. The terminology used herein is for the purpose of describing the particular embodiments, The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
太赫兹辐射是指频率在0.1THz到10THz之间的电磁辐射，太赫兹时域反射***结合光电效应和时域反射技术可实现皮秒(ps)量级时间晃动的高分辨率故障检测，其中，时间晃动就是时间抖动，表示脉冲信号的信号周期与理想周期的微小偏差，从一定程度上表现了脉冲的跳变程度。Terahertz radiation refers to electromagnetic radiation with a frequency between 0.1 THz and 10 THz. The terahertz time domain reflection system combines photoelectric effect and time domain reflection technology to achieve high resolution fault detection in picosecond (ps) magnitude time sloshing. Time sway is time jitter, which indicates the slight deviation of the signal period of the pulse signal from the ideal period, which shows the degree of pulse hopping to a certain extent.
图1为一实施例中太赫兹时域反射***的光路图，图2为一实施例中太赫兹时域反射***中电脉冲收发装置的结构框架图。太赫兹时域反射***用于对半导体集成电路故障进行检测，包括脉冲激光器10、分束装置20、光学延迟线装置40以及电脉冲收发装置50。脉冲激光器10发射的超短脉冲激光通过分束装置20进行脉冲激光的分束。一束脉冲激光直接形成泵浦光，另一束经由光学延迟线装置40后形成激发光，其中，光学延迟线装置40用于增加泵浦光和激发光的时间延迟。超短脉冲激光激发电脉冲收发装置50产生和接收高频电脉冲信号，高频电脉冲信号的频率皮秒(ps)量级，且该高频电脉冲信号为电流信号，其电流信号的强度为纳安(nA)级别。产生的高频电脉冲信号被送入待测芯片60进行故障检测。1 is an optical path diagram of a terahertz time domain reflection system in an embodiment, and FIG. 2 is a structural frame diagram of an electrical pulse transceiver device in a terahertz time domain reflection system in an embodiment. The terahertz time domain reflection system is used to detect semiconductor integrated circuit failures, including the pulsed laser 10, the beam splitting device 20, the optical delay line device 40, and the electrical pulse transceiver device 50. The ultrashort pulse laser light emitted from the pulse laser 10 is split by the pulse laser by the beam splitting device 20. One pulsed laser directly forms the pump light, and the other beam forms an excitation light via the optical delay line device 40, wherein the optical delay line device 40 is used to increase the time delay of the pump light and the excitation light. The ultrashort pulse laser excitation electric pulse transceiver device 50 generates and receives a high frequency electric pulse signal, the frequency of the high frequency electric pulse signal is on the order of picoseconds (ps), and the high frequency electric pulse signal is a current signal, and the intensity of the current signal For the Naan (nA) level. The generated high frequency electric pulse signal is sent to the chip to be tested 60 for fault detection.
通过上述太赫兹时域反射***，可以快速获得待测芯片60在一定时间延迟内的太赫兹时域反射信号的变化，也即可以获得高频电脉冲信号在待测芯片60中沿引线传播的距离的信息。由于待测芯片60的引线开路、短路等连通性故障会引起阻抗的不同变化，继而使太赫兹时域反射信号变化。例如引线中开路时，太赫兹时域反射信号会在对应的距离呈现正反射峰，其峰值与阻抗有关，因此可通过太赫兹时域反射信号的变化，对待测芯片60中连通性故障进行定位和判定，也可以对待测芯片60中引线的阻抗进行测量。Through the above terahertz time domain reflection system, the change of the terahertz time domain reflection signal of the chip under test 60 within a certain time delay can be quickly obtained, that is, the high frequency electric pulse signal can be transmitted along the lead in the chip to be tested 60. Distance information. Due to the connectivity failure of the open circuit or short circuit of the chip to be tested 60, different impedance changes may be caused, and then the terahertz time domain reflection signal is changed. For example, when the lead is open, the terahertz time domain reflection signal will exhibit a positive reflection peak at a corresponding distance, and its peak value is related to the impedance. Therefore, the connectivity fault of the chip 60 to be tested can be located by the change of the terahertz time domain reflection signal. And the determination, the impedance of the lead in the chip to be tested 60 can also be measured.
脉冲激光器10为飞秒脉冲激光器10，用于发射的超短脉冲激光，其中超短 脉冲激光为小于1皮秒(ps)的脉冲光。The pulsed laser 10 is a femtosecond pulse laser 10 for transmitting ultrashort pulse laser, in which ultrashort The pulsed laser is pulsed light of less than 1 picosecond (ps).
太赫兹时域反射***还包括光纤30，所述光纤30依次连接所述脉冲激光器10、分束装置20、光学延迟线装置40，用于传输所述脉冲激光。脉冲激光器10与分束装置20、分束装置20与光学延迟线装置40之间均是光纤30传输，通过光纤30来输出超短脉冲激光，可以提供传输效率，减小能量损耗，同时提高整个***的稳定性。The terahertz time domain reflection system further includes an optical fiber 30 that in turn connects the pulsed laser 10, the beam splitting device 20, and the optical delay line device 40 for transmitting the pulsed laser light. The pulse laser 10 and the beam splitting device 20, the beam splitting device 20 and the optical delay line device 40 are both transmitted by the optical fiber 30, and the ultrashort pulse laser is output through the optical fiber 30, which can provide transmission efficiency, reduce energy loss, and improve the whole System stability.
分束装置20为光纤耦合器20，所述光纤耦合器20的输入端与所述光纤30连接，所述光纤耦合器20的第一输出端连接光纤30用于输出所述泵浦光，所述光纤耦合器20的第二输出端连接光纤30用于输出所述激发光。The beam splitting device 20 is a fiber coupler 20, the input end of the fiber coupler 20 is connected to the optical fiber 30, and the first output end of the fiber coupler 20 is connected to the optical fiber 30 for outputting the pump light. The second output of the fiber coupler 20 is coupled to the optical fiber 30 for outputting the excitation light.
在一实施例中，若从脉冲激光器10发射的超短脉冲激光在自由空间内传输，其分束装置20还可以为分束镜，由分束镜将超短脉冲激光一分为二。In one embodiment, if the ultrashort pulse laser light emitted from the pulsed laser 10 is transmitted in free space, the beam splitting device 20 may also be a beam splitter mirror, which splits the ultrashort pulse laser into two.
电脉冲收发装置50，所述电脉冲收发装置50与待测芯片60连接，所述泵浦光和激发光均聚焦在所述电脉冲收发装置50上，所述电脉冲收发装置50用于产生高频电脉冲信号发送至所述待测芯片60，并接收来自所述待测芯片60反射回的高频电脉冲信号形成太赫兹时域反射信号，并分析所述待测芯片的故障信息，其中，所述高频电脉冲信号为纳安级电流信号。The electrical pulse transceiver device 50 is connected to the chip to be tested 60. The pump light and the excitation light are both focused on the electrical pulse transceiver device 50. The electrical pulse transceiver device 50 is used to generate Sending a high frequency electric pulse signal to the chip to be tested 60, and receiving a high frequency electric pulse signal reflected from the chip to be tested 60 to form a terahertz time domain reflection signal, and analyzing fault information of the chip to be tested, Wherein, the high frequency electric pulse signal is a nano level current signal.
电脉冲收发装置50包括第一光电导天线51、第二光电导天线52、信号分析模组53、传输线55以及探针56。The electrical pulse transceiver device 50 includes a first photoconductive antenna 51, a second photoconductive antenna 52, a signal analysis module 53, a transmission line 55, and a probe 56.
光纤耦合器20输出的泵浦光经自由空间聚焦到第一光电导天线51(发射光电导天线)上并激发产生高频电脉冲信号。光学延迟线装置40输出的激发光经自由空间聚焦至第二光电导天线52(接收光电导天线)。高频电脉冲信号经由传输线55、探针56送入待测芯片60，在待测芯片60中传输。其中，传输线55是具有低阻抗、低损耗的高频高速传输线55。探针56末梢将直接置于待测半导体芯片的引脚，以实施故障的检测。相应的，来自待测芯片60的高频电脉冲信号反射信号在经探针56、传输线55反射至第二光电导天线52中，并在第二光电导天线52中转为为光电导内的电流信号后输出至信号分析模组53，由信号分析模组53对反射的高频电脉冲信号进行采集处理，形成所述太赫兹时域反射信号。 The pump light output from the fiber coupler 20 is freely spatially focused onto the first photoconductive antenna 51 (transmitting the photoconductive antenna) and excited to generate a high frequency electrical pulse signal. The excitation light output from the optical delay line device 40 is spatially focused to the second photoconductive antenna 52 (receiving the photoconductive antenna). The high-frequency electric pulse signal is sent to the chip to be tested 60 via the transmission line 55 and the probe 56, and is transmitted in the chip 60 to be tested. Among them, the transmission line 55 is a high-frequency high-speed transmission line 55 having low impedance and low loss. The tip of the probe 56 will be placed directly on the pin of the semiconductor chip to be tested to perform fault detection. Correspondingly, the high frequency electric pulse signal reflected signal from the chip to be tested 60 is reflected into the second photoconductive antenna 52 via the probe 56 and the transmission line 55, and is converted into a current in the photoconductive body in the second photoconductive antenna 52. The signal is output to the signal analysis module 53, and the reflected high-frequency electric pulse signal is collected and processed by the signal analysis module 53 to form the terahertz time domain reflection signal.
信号分析模组53包括信号采集模块531和信号处理模块532，所述第二光电导天线52、信号采集模块531、信号处理模块532依次电连接。信号采集模块531包括信号放大单元、锁相放大单元和信号采集单元，可以对反射的高频电脉冲信号进行采集放大处理。信号处理模块532信号处理单元和故障分析单元，可以对根据太赫兹时域反射信号分析待测芯片60的故障信息。The signal analysis module 53 includes a signal acquisition module 531 and a signal processing module 532. The second photoconductive antenna 52, the signal acquisition module 531, and the signal processing module 532 are electrically connected in sequence. The signal acquisition module 531 includes a signal amplifying unit, a phase lock amplifying unit and a signal collecting unit, and can perform acquisition and amplification processing on the reflected high frequency electric pulse signal. The signal processing module 532 and the fault analysis unit can analyze the fault information of the chip under test 60 according to the terahertz time domain reflection signal.
电脉冲收发装置50还包括直流偏置模块54，直流偏置模块54与第一光电导天线51连接，用于为第一光电导天线51提供直流偏置电压。The electrical pulse transceiver 50 further includes a DC biasing module 54 coupled to the first photoconductive antenna 51 for providing a DC bias voltage to the first photoconductive antenna 51.
所述电脉冲收发装置50还包括电流放大模块57，所述电流放大模块57与所述第一光电导天线51连接，用于对传输线55内微弱的高频电脉冲信号进行一定程度放大处理。The electric pulse transmitting and receiving device 50 further includes a current amplifying module 57. The current amplifying module 57 is connected to the first photoconductive antenna 51 for performing a certain degree of amplification processing on the weak high frequency electric pulse signal in the transmission line 55.
所述电脉冲收发装置50还包括频率校正模块58，所述频率校正模块58与所述第一光电导天线51连接，频率校正模块58的输出端通过传输线55电性连接至探针56。频率校正模块58用于监测和校正所示高频电脉冲信号。在一实施例中，若对微弱高频电脉冲信号的频率校正较为困难，频率校正模块58设于电流放大模块57与传输线55之间。The electrical pulse transceiver device 50 further includes a frequency correction module 58 coupled to the first photoconductive antenna 51. The output of the frequency correction module 58 is electrically coupled to the probe 56 via a transmission line 55. Frequency correction module 58 is used to monitor and correct the high frequency electrical pulse signals shown. In an embodiment, if the frequency correction of the weak high frequency electrical pulse signal is difficult, the frequency correction module 58 is disposed between the current amplification module 57 and the transmission line 55.
进一步地，在泵浦光的照射下，第一光电导天线51基底可产生自由移动的电子-空穴对，并在直流偏置模块54的作用下形成很小的电流，此时第一光电导天线51具有高阻且低导通率的特性。由于泵浦光是超短脉冲激光组成，在超短脉冲激光的作用下，第一光电导天线51产生反复运动的载流子和迅速变化的电流，使得电导率大大增加，从而形成皮秒量级的高频电脉冲信号。Further, under the illumination of the pump light, the substrate of the first photoconductive antenna 51 can generate a freely moving electron-hole pair and form a small current under the action of the DC bias module 54. The lead antenna 51 has a characteristic of high resistance and low conductance. Since the pump light is composed of an ultrashort pulse laser, under the action of the ultrashort pulse laser, the first photoconductive antenna 51 generates repeatedly moving carriers and rapidly changing currents, so that the conductivity is greatly increased, thereby forming a picosecond amount. Level high frequency electrical pulse signal.
高频电脉冲信号发送至待测芯片60中，高频电脉冲信号在连通故障发生处，将形成皮秒量级反射型高频电脉冲信号，经探针56、传输线55进入第二光电导天线52，在第二光电导天线52内形成高频瞬时电势差。在激发光的照射下，第二光电导天线52基底也可产生自由移动的电子-空穴对，在高频瞬时电势差和激发光的超短脉冲的作用下，第二光电导天线52瞬时导通，产生瞬时光电流，并输出至信号分析模组53，形成瞬时的太赫兹时域反射信号。The high-frequency electric pulse signal is sent to the chip to be tested 60, and the high-frequency electric pulse signal forms a picosecond-level reflective high-frequency electric pulse signal at the occurrence of the connection failure, and enters the second photoconductive via the probe 56 and the transmission line 55. The antenna 52 forms a high frequency instantaneous potential difference in the second photoconductive antenna 52. Under the illumination of the excitation light, the substrate of the second photoconductive antenna 52 can also generate freely moving electron-hole pairs, and the second photoconductive antenna 52 is instantaneously guided by the high frequency instantaneous potential difference and the ultrashort pulse of the excitation light. The instantaneous photocurrent is generated and output to the signal analysis module 53 to form a transient terahertz time domain reflection signal.
为判定待测芯片60连通性故障的位置，需获得不同时间延迟的太赫兹时域反射信号，即太赫兹时域反射信号在一段时间延迟的变化。通过调节延时线装 置改变泵浦光和激发光的时间延迟，从而激发第一光电导天线51在不同时间延迟内对太赫兹时域反射信号的无晃动等效采样，实现太赫兹时域反射信号在一段时间延迟内的变化的重建。通过对太赫兹时域反射信号的分析，也即可以获得高频电脉冲信号在待测芯片60中沿引线传播的距离的信息，即可了解故障的时间延迟、相位及电脉冲反射强度，从而判断连通性故障的位置、类型以及分析芯片引线的阻抗变化。In order to determine the location of the connectivity fault of the chip under test 60, it is necessary to obtain a terahertz time domain reflection signal with different time delays, that is, a change in the terahertz time domain reflection signal over a period of time. By adjusting the delay line The time delay of changing the pump light and the excitation light is changed, thereby exciting the first photoconductive antenna 51 to perform non-slosh equivalent sampling of the terahertz time domain reflected signal in different time delays, and realizing the terahertz time domain reflected signal to be delayed for a period of time. Reconstruction of changes within. By analyzing the terahertz time-domain reflected signal, that is, information on the distance traveled by the high-frequency electric pulse signal along the lead in the chip to be tested 60 can be obtained, and the time delay, phase, and electric pulse reflection intensity of the fault can be known. Determine the location, type, and impedance variation of the connected chip leads.
采用太赫兹时域反射***对半导体集成电路的故障检测，其最大测量长度可达150mm；最高测量精度小于5微米。其中，最大测量长度主要取决于高频电脉冲信号在传输线55、待测芯片60内以及电脉冲收发模块的衰减情况和光学延迟线装置40对超短脉冲激光的最大时间延迟。在本实施例中，高频电脉冲信号(电流)信号的强度在纳安(nA)级别，信号比较微弱，在传输线55和引线中均有衰减，定义最大测量长度为高频电脉冲信号可以在引线中传输的距离。最高测量精度主要由脉冲激光器10发射的超短激光脉冲的脉冲上升时间所决定，在本实施例中，超短激光脉冲的脉冲上升时间小于6皮秒(ps)，还与太赫兹时域反射信号采集的信噪比有关。The terahertz time domain reflection system is used for fault detection of semiconductor integrated circuits, and the maximum measurement length is up to 150 mm; the highest measurement accuracy is less than 5 micrometers. The maximum measurement length mainly depends on the attenuation of the high-frequency electric pulse signal in the transmission line 55, the chip to be tested 60, and the electrical pulse transceiver module, and the maximum time delay of the optical delay line device 40 for the ultrashort pulse laser. In this embodiment, the intensity of the high-frequency electric pulse signal (current) signal is in the nanoampere (nA) level, the signal is relatively weak, and there is attenuation in the transmission line 55 and the lead, and the maximum measurement length is defined as the high-frequency electric pulse signal. The distance traveled in the leads. The highest measurement accuracy is mainly determined by the pulse rise time of the ultrashort laser pulse emitted by the pulse laser 10. In this embodiment, the pulse rise time of the ultrashort laser pulse is less than 6 picoseconds (ps), and also with the terahertz time domain reflection. The signal to noise ratio of the signal acquisition is related.
由于太赫兹时域反射***使用超快激光激发高频电脉冲信号，该高频电脉冲信号上升时间极短，相比电时域反射仪可达到微米级别的检测精度，大大提升了检测的信噪比，为复杂封装提供高准确率、高灵敏度的故障分析。通过使用太赫兹时域反射***，可以检测复杂封装内连通性问题，及时发现生产制造过程中工艺上的漏洞，降低出厂产品的故障发生率，避免芯片的返厂检修，维护企业的形象。这是太赫兹时域反射***用于小型化复杂化芯片封装的重要优势。Since the terahertz time domain reflection system uses ultra-fast laser to excite high-frequency electric pulse signals, the high-frequency electric pulse signal has a very short rise time, and the micro-level detection accuracy can be achieved compared with the electric time domain reflectometer, thereby greatly improving the detection signal. Noise ratio provides high accuracy and high sensitivity fault analysis for complex packages. By using the terahertz time domain reflection system, it is possible to detect connectivity problems in complex packages, timely discover process loopholes in the manufacturing process, reduce the failure rate of manufactured products, avoid chip return maintenance, and maintain the image of the enterprise. This is an important advantage of terahertz time domain reflectometry for miniaturizing complex chip packages.
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above-described embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be considered as the scope of this manual.
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的 普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。 The above-described embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that for the field A person skilled in the art can make several modifications and improvements without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims (8)

  1. 一种太赫兹时域反射***，用于对半导体集成电路故障进行检测，其特征在于，包括：A terahertz time domain reflection system for detecting a failure of a semiconductor integrated circuit, comprising:
    飞秒脉冲激光器，用于发射超短脉冲激光；a femtosecond pulsed laser for emitting ultrashort pulsed lasers;
    分束装置，用于将所述脉冲激光分束为泵浦光和激发光；a beam splitting device for splitting the pulsed laser into pump light and excitation light;
    光学延迟线装置，设置在所述激发光传播的方向上，用于调节所述泵浦光和所述激发光的时间延时；An optical delay line device disposed in a direction in which the excitation light propagates for adjusting a time delay of the pump light and the excitation light;
    电脉冲收发装置，所述电脉冲收发装置与待测芯片连接，所述泵浦光和激发光均聚焦在所述电脉冲收发装置上，所述电脉冲收发装置用于产生高频电脉冲信号发送至所述待测芯片，并接收来自所述待测芯片反射的高频电脉冲信号形成太赫兹时域反射信号，并分析所述待测芯片的故障信息所述电脉冲收发装置包括：An electrical pulse transceiver device, wherein the electrical pulse transceiver device is connected to a chip to be tested, wherein the pump light and the excitation light are both focused on the electrical pulse transceiver device, and the electrical pulse transceiver device is configured to generate a high frequency electrical pulse signal Sending to the chip to be tested, and receiving the high frequency electric pulse signal reflected from the chip to be tested to form a terahertz time domain reflection signal, and analyzing the fault information of the chip to be tested. The electric pulse transceiver device comprises:
    第一光电导天线，所述泵浦光聚焦在所述第一光电导天线上，用于产生高频电脉冲信号并输送至所述待测芯片；a first photoconductive antenna, the pump light is focused on the first photoconductive antenna for generating a high frequency electric pulse signal and sent to the chip to be tested;
    第二光电导天线，所述激发光聚焦在所述第二光电导天线上，用于接收来自所述待测芯片反射的高频电脉冲信号；其中，所述高频电脉冲信号的频率为皮秒量级，且所述高频电脉冲信号为电流信号；a second photoconductive antenna, wherein the excitation light is focused on the second photoconductive antenna for receiving a high frequency electric pulse signal reflected from the chip to be tested; wherein the frequency of the high frequency electric pulse signal is a picosecond order, and the high frequency electrical pulse signal is a current signal;
    探针，分别与所述第一光电导天线、第二光电导天线、待测芯片连接；a probe, which is respectively connected to the first photoconductive antenna, the second photoconductive antenna, and the chip to be tested;
    信号分析模组，与所述第二光电导天线连接，用于对反射的高频电脉冲信号进行采集处理，形成所述太赫兹时域反射信号以获得所述高频电脉冲信号在待测芯片中沿引线传播的距离信息，并分析所述待测芯片的故障信息；a signal analysis module is connected to the second photoconductive antenna for collecting and processing the reflected high frequency electric pulse signal to form the terahertz time domain reflection signal to obtain the high frequency electric pulse signal to be tested Distance information traveling along the lead in the chip, and analyzing fault information of the chip to be tested;
    所述电脉冲收发装置还包括频率校正模块，所述频率校正模块与所述第一光电导天线连接，用于监测和校正所示高频电脉冲信号。The electrical pulse transceiver device further includes a frequency correction module coupled to the first photoconductive antenna for monitoring and correcting the high frequency electrical pulse signal as shown.
  2. 根据权利要求1所述的太赫兹时域反射***，其特征在于，所述信号分析模组包括信号采集模块和信号处理模块，所述第二光电导天线、信号采集模块、信号处理模块依次电连接；The terahertz time domain reflection system according to claim 1, wherein the signal analysis module comprises a signal acquisition module and a signal processing module, and the second photoconductive antenna, the signal acquisition module, and the signal processing module are sequentially powered. connection;
    所述信号采集模块用于对反射的高频电脉冲信号进行采集放大处理；The signal acquisition module is configured to perform acquisition and amplification processing on the reflected high-frequency electric pulse signal;
    所述信号处理模块用于形成所述太赫兹时域反射信号并分析所述待测芯片 的故障信息。The signal processing module is configured to form the terahertz time domain reflection signal and analyze the chip to be tested Fault information.
  3. 根据权利要求1所述的太赫兹时域反射***，其特征在于，所述电脉冲收发装置还包括直流偏置模块，所述直流偏置模块与所述第一光电导天线连接，用于为所述第一光电导天线提供直流偏置电压。The terahertz time domain reflection system of claim 1 , wherein the electrical pulse transceiver further comprises a DC bias module, the DC bias module being coupled to the first photoconductive antenna for The first photoconductive antenna provides a DC bias voltage.
  4. 根据权利要求1所述的太赫兹时域反射***，其特征在于，所述电脉冲收发装置还包括电流放大模块，所述电流放大模块与所述第一光电导天线连接，用于所述高频电脉冲信号进行放大处理。The terahertz time domain reflection system according to claim 1, wherein the electrical pulse transceiver further comprises a current amplification module, the current amplification module being coupled to the first photoconductive antenna for the high The frequency pulse signal is amplified.
  5. 根据权利要求1所述的太赫兹时域反射***，其特征在于，所述电脉冲收发装置还包括传输线，所述传输线的一端分别与所述第一光电导天线、第二光电导天线连接，所述传输线的另一端与所述探针连接。The terahertz time domain reflection system according to claim 1, wherein the electrical pulse transceiver device further comprises a transmission line, and one end of the transmission line is respectively connected to the first photoconductive antenna and the second photoconductive antenna, The other end of the transmission line is connected to the probe.
  6. 根据权利要求1所述的太赫兹时域反射***，其特征在于，还包括光纤，所述光纤依次连接所述脉冲激光器、分束装置、光学延迟线装置，用于传输所述脉冲激光。The terahertz time domain reflection system according to claim 1, further comprising an optical fiber, wherein said optical fiber is sequentially connected to said pulse laser, said beam splitting means, and optical delay line means for transmitting said pulsed laser light.
  7. 根据权利要求6所述的太赫兹时域反射***，其特征在于，所述分束装置为光纤耦合器，所述光纤耦合器的输入端与所述光纤连接，所述光纤耦合器的第一输出端用于输出所述泵浦光，所述光纤耦合器的第二输出端用于输出所述激发光。The terahertz time domain reflection system according to claim 6, wherein the beam splitting device is a fiber coupler, and an input end of the fiber coupler is connected to the optical fiber, and the fiber coupler is first The output is for outputting the pump light, and the second output of the fiber coupler is for outputting the excitation light.
  8. 根据权利要求1所述的太赫兹时域反射***，其特征在于，所述分束装置为分束镜。 The terahertz time domain reflection system of claim 1 wherein said beam splitting means is a beam splitter.
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