CN112014329B - Imaging system and method for internal structure of semiconductor product - Google Patents
Imaging system and method for internal structure of semiconductor product Download PDFInfo
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Abstract
The invention relates to the technical field of terahertz imaging, and provides a system and a method for imaging an internal structure of a semiconductor product, wherein the system comprises an emitting device for emitting a first terahertz wave; the light modulation device is arranged close to the transmitting end of the transmitting device and used for carrying out spatial coding on the first terahertz wave transmitted by the transmitting device to form second terahertz waves with spatial distribution and penetrating through an object to be detected to obtain third terahertz waves containing internal structure image data of the object to be detected; a receiving device arranged opposite to the light modulation device and used for receiving the third terahertz wave and converting the third terahertz wave into an electric signal; and the remote terminal equipment is electrically connected with the receiving device and is used for receiving the electric signal and extracting the image data to construct an internal structure image of the object to be detected. The invention has the advantages of clearer image outline after imaging and higher imaging precision.
Description
Technical Field
The invention relates to the technical field of terahertz imaging, in particular to a system and a method for imaging an internal structure of a semiconductor product.
Background
The defect detection of semiconductor chips is an important step in the process of manufacturing semiconductor chips, and determines the yield of the semiconductor chips. The main defects of semiconductor chips include non-uniform internal structure of wafer, peeling of internal circuit of chip, breakage of lead wire of chip package, and failure of package material due to stress.
At present, optical detection, ultrasonic detection and X-ray detection are commonly used semiconductor defect detection technologies in industry, but the technologies have certain limitations. The optical inspection cannot observe the inside of the semiconductor product because it cannot penetrate the package material of the chip and the PCB board. Because the acoustic couplant is used in the test process, the ultrasonic technology is time-consuming and can pollute products, and only sampling detection can be realized. The X-ray technique can only detect metals, but not cracks, layers or holes in the chip without metal. In addition, the ionizing properties of the X-rays can damage the internal circuit structures of the wafer and cause personal injury to field workers.
At present, the semiconductor defect detection is also carried out by adopting a terahertz detection technology, but due to the limitation of the terahertz wave limit resolution, the terahertz spectrum imaging still has the phenomenon of relatively low imaging resolution. The difficulty that the terahertz imaging system can not obtain high spatial resolution is also an important technical problem that the terahertz imaging defect detection technology cannot be widely applied to the industrial field. Therefore, how to realize that the image based on the terahertz detection technology is clearer and the precision is higher becomes a technical problem which needs to be solved urgently.
Disclosure of Invention
The invention mainly aims to provide a system and a method for imaging an internal structure of a semiconductor product, and aims to solve the problems of clearer picture and higher precision of an image imaged based on a terahertz detection technology.
In order to achieve the above object, the present invention provides a system for imaging an internal structure of a semiconductor product, the system comprising: a transmitting device for transmitting a first terahertz wave; the light modulation device is arranged close to the transmitting end of the transmitting device and used for carrying out spatial coding on the first terahertz wave transmitted by the transmitting device to form second terahertz waves with spatial distribution and penetrating through an object to be detected to obtain third terahertz waves containing internal structure image data of the object to be detected; a receiving device arranged opposite to the light modulation device and used for receiving the third terahertz wave and converting the third terahertz wave into an electric signal; and the remote terminal equipment is electrically connected with the receiving device and is used for receiving the electric signal and extracting the image data to construct an internal structure image of the object to be detected.
Preferably, the light modulation device includes: the spatial light modulator is arranged between the transmitting device and the object to be detected; a semiconductor laser disposed on the peripheral side of the spatial light modulator; the digital light processor is arranged between the semiconductor laser and the spatial light modulator, and a mask picture consistent with the internal structure outline image of the object to be detected is stored in the digital light processor; and laser emitted by the semiconductor laser is imaged on the spatial light modulator through the digital light processor, and a photo-generated carrier layer corresponding to the mask picture is formed on one side surface of the spatial light modulator facing the emitting device.
Preferably, the system further comprises: and the first lens is arranged between the transmitting device and the spatial light modulator and used for converting the first terahertz wave transmitted by the transmitting device from a divergent light beam into a parallel light beam.
Preferably, a scanning point array is arranged on the spatial light modulator, and the range of the scanning point array on the spatial light modulator covers the projection range of the first terahertz wave after passing through the first lens.
Preferably, the emitting device comprises a femtosecond laser and a photoconductive emitter; the receiving device is a photoconductive detector.
Preferably, the light modulation device further includes: and the second lens is arranged between the semiconductor laser and the digital light processor and is used for focusing the laser emitted by the semiconductor laser on the digital light processor.
Preferably, the system further comprises: and the signal amplifier is arranged between the object to be measured and the receiving device and is used for filtering noise in the third terahertz wave.
In order to achieve the above object, the present invention further provides an imaging method of the imaging system for internal structure of semiconductor product as above, including:
placing an object to be tested between the light modulation device and the receiving device, and starting the transmitting device, the light modulation device, the receiving device and the remote terminal equipment;
the method comprises the steps that a first terahertz wave is sent to a light modulation device through a transmitting device, the first terahertz wave transmitted by the transmitting device is subjected to spatial coding to form a second terahertz wave with spatial distribution, and the second terahertz wave penetrates through an object to be detected to obtain a third terahertz wave containing internal structure image data of the object to be detected;
receiving the third terahertz waves by the receiving device, converting the third terahertz waves into electric signals, and sending the electric signals to the remote terminal equipment;
and extracting image data from the electric signal through the remote terminal equipment and constructing an internal structure image of the object to be detected.
Preferably, after the step of extracting image data from the electrical signal and constructing an image of the internal structure of the object to be measured by the remote terminal device, the method further comprises the processing steps of:
and carrying out smooth denoising processing and gray stretching processing on the internal structure image to obtain a first image with improved definition.
Preferably, the step of performing smoothing denoising and gray stretching processing on the internal structure image to obtain a first image with improved definition further includes:
carrying out smooth denoising processing and gray stretching processing on the internal structure image, and then carrying out binarization processing to obtain a binarization image;
and carrying out edge detection on the binary image to obtain a contour region of the object to be detected, and removing a background region in the binary image to obtain the first image.
The invention provides a system and a method for imaging an internal structure of a semiconductor product, wherein the system for imaging the internal structure of the semiconductor product comprises the following components: a transmitting device for transmitting a first terahertz wave; the light modulation device is arranged close to the transmitting end of the transmitting device and used for carrying out spatial coding on the first terahertz wave transmitted by the transmitting device to form second terahertz waves with spatial distribution and penetrating through an object to be detected to obtain third terahertz waves containing internal structure image data of the object to be detected; a receiving device arranged opposite to the light modulation device and used for receiving the third terahertz wave and converting the third terahertz wave into an electric signal; and the remote terminal equipment is electrically connected with the receiving device and is used for receiving the electric signal and extracting the image data to construct an internal structure image of the object to be detected. The invention has the advantages of clearer image outline after imaging and higher imaging precision.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an imaging system for internal structure of a semiconductor product according to an embodiment of the present invention;
fig. 2 is a flowchart of an imaging method of the imaging system for the internal structure of the semiconductor product in the embodiment of the invention.
Reference numerals: 1. a transmitting device; 11. a femtosecond laser; 12. a photoconductive emitter; 2. a light modulation device; 21. a spatial light modulator; 22. a semiconductor laser; 23. a digital light processor; 3. an object to be measured; 4. a receiving device; 5. a first lens; 6. a second lens; 7. a signal amplifier.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides an imaging system for an internal structure of a semiconductor product.
Referring to fig. 1, a schematic diagram of an overall structure of an imaging system for an internal structure of a semiconductor product according to the present invention is shown. The system comprises: a transmitting device 1 for transmitting a first terahertz wave; the optical modulation device 2 is arranged close to the transmitting end of the transmitting device 1 and used for carrying out spatial coding on the first terahertz wave transmitted by the transmitting device 1 to form second terahertz waves with spatial distribution and penetrating through the object to be detected 3 to obtain third terahertz waves containing internal structure image data of the object to be detected 3; a receiving device 4 disposed opposite to the optical modulation device 2, for receiving the third terahertz wave and converting it into an electrical signal; and the remote terminal equipment is electrically connected with the receiving device 4 and is used for receiving the electric signals and extracting the image data to construct an internal structure image of the object to be detected 3.
In the present embodiment, the semiconductor product internal structure imaging system includes a transmitting device 1, a light modulation device 2, a receiving device 4, and a remote terminal device.
Specifically, the transmitting device 1 includes a femtosecond laser 11 and a photoconductive emitter 12, and the first terahertz wave can be transmitted by activating the photoconductive emitter by the femtosecond laser 11.
The light modulation device 2 is arranged close to the transmitting end of the transmitting device 1, and is used for performing spatial coding on the first terahertz wave transmitted by the transmitting device 1 to form a second terahertz wave with spatial distribution, and the third terahertz wave containing the internal structure image data of the object to be detected 3 can be obtained after penetrating through the object to be detected 3.
The object 3 to be detected can be a semiconductor chip, and terahertz waves penetrate through packaging materials and a PCB of the semiconductor chip, so that a circuit structure image inside the semiconductor chip is obtained, preparation is made for subsequently identifying whether defects exist in the internal structure of a semiconductor product, and meanwhile, the terahertz waves do not cause personal injury to field workers.
The first terahertz wave modulated by the light modulation device 2 is formed into a second terahertz wave with spatial distribution, so that the terahertz wave has complete structural characteristics before penetrating through the object to be detected 3, namely, the second terahertz wave modulated by the light straightening device forms structural light consistent with the internal structure profile of the object to be detected 3, the structural light is more consistent with the internal structure profile of the object to be detected 3 in the process of penetrating through the object to be detected 3, the imaged image profile is clearer, the imaging precision is higher, the problem that the imaging resolution ratio is relatively lower in the existing terahertz spectrum imaging is solved due to the limitation of the terahertz wave limit resolution ratio.
A receiving device 4 is arranged with respect to the light modulation device 2, preferably a photoconductive receiver corresponding to the photoconductive transmitter 12, for receiving the third terahertz wave and converting it into an electrical signal.
A remote terminal device (not shown) is electrically connected to the receiving means 4, preferably a computer with data processing capabilities, for receiving the electrical signals and extracting image data to construct an image of the internal structure of the object 3 to be measured.
In a further preferred embodiment of the present invention, as shown in fig. 1, the light modulation device 2 comprises: the spatial light modulator 21 is arranged between the transmitting device 1 and the object 3 to be detected; a semiconductor laser 22 provided on the peripheral side of the spatial light modulator 21; the digital light processor 23 is arranged between the semiconductor laser 22 and the spatial light modulator 21, and a mask picture consistent with the internal structure outline image of the object to be detected 3 is stored in the digital light processor; the laser emitted by the semiconductor laser is imaged on the spatial light modulator 21 through the digital light processor 23, and a photogenerated carrier layer corresponding to the mask picture is formed on one side surface of the spatial light modulator 21 facing the emitting device 1.
In the present embodiment, the optical modulation device 2 includes a spatial optical modulator 21, a semiconductor laser 22, and a digital light processor 23.
Specifically, the spatial light modulator 21 is disposed between the emitting device 1 and the object 3 to be measured, and the spatial light modulator 21 is configured to modulate a parameter of the light field through liquid crystal molecules under active control, for example, modulate the amplitude of the light field, modulate the phase through a refractive index, modulate the polarization state through rotation of a polarization plane, or implement conversion between incoherent light and coherent light, so as to write a certain information into the light wave, thereby achieving the purpose of modulating the light wave. The method can conveniently load information into a one-dimensional or two-dimensional optical field, and quickly process the loaded information by utilizing the advantages of wide bandwidth of light, multi-channel parallel processing and the like.
The semiconductor laser 22 is provided on the peripheral side of the spatial light modulator 21, for example, above or below the spatial light modulator 21.
The digital light processor 23 (DLP) is arranged between the semiconductor laser 22 and the spatial light modulator 21, a mask picture consistent with the internal structure outline image of the object 3 to be detected is stored in the digital light processor, a scanning point array is arranged on the spatial light modulator 21, the range of the scanning point array on the spatial light modulator 21 covers the projection range of the first terahertz wave after passing through the first lens 5, so that laser emitted by the semiconductor laser is imaged on the spatial light modulator 21 through the digital light processor 23, and a photo-generated carrier layer corresponding to the mask picture is formed on one side surface of the spatial light modulator 21 facing the emitting device 1.
In a further preferred embodiment of the present invention, as shown in fig. 1, the system further comprises: and a first lens 5 arranged between the transmitting device 1 and the spatial light modulator and used for converting the first terahertz wave transmitted by the transmitting device 1 from a divergent light beam into a parallel light beam.
In this embodiment, the system further includes a first lens 5 disposed between the emitting device 1 and the spatial light modulator, and the first lens 5 can convert the first terahertz wave emitted by the emitting device 1 from a diverging light beam to a parallel light beam, so as to facilitate formation of a second terahertz wave with complete spatial distribution after penetrating through the spatial light modulator.
In a further preferred embodiment of the present invention, as shown in fig. 1, the light modulation device 2 further comprises: and the second lens 6 is arranged between the semiconductor laser 22 and the digital light processor 23 and is used for focusing the laser light emitted by the semiconductor laser 22 on the digital light processor 23.
In this embodiment, the optical modulation device 2 further includes a second lens 6 disposed between the semiconductor laser 22 and the digital optical processor 23, and the second lens 6 can focus the laser light emitted from the semiconductor laser 22 on the digital optical processor 23, so as to realize uniform optical path direction of the laser light before irradiating the digital optical processor 23.
In a further preferred embodiment of the present invention, as shown in fig. 1, the system further comprises: and the signal amplifier 7 is arranged between the object to be measured 3 and the receiving device 4 and is used for filtering noise in the third terahertz wave.
The terahertz is easy to have a phenomenon of low signal-to-noise ratio in the semiconductor imaging process. If the data acquisition card is directly adopted to acquire the electric signals of the receiving device, the noise of the electric signals is large, and when the variation of the electric signals is weak, the electric signals can be submerged by the noise and cannot be effectively identified, so that the pixel points become blind points. In order to solve the problem that the weak electric signal is submerged by noise, in the embodiment, the signal amplifier 7 is selected to filter the noise, so as to improve the signal-to-noise ratio of the system. The principle of the signal amplifier 7 is to convert the measured signal into dc by means of frequency conversion using heterodyne oscillation technology. Namely, the signal correlation principle in the signal amplifier 7 is utilized to multiply and integrate two periodic signals mixed with noise, and then the signals are detected from the noise, and the purpose of weakening the noise influence through cross-correlation operation is achieved.
Another aspect of the present invention provides an imaging method of the imaging system for internal structure of semiconductor product as described above, as shown in fig. 2, including:
s1: placing an object to be detected 3 between the light modulation device 2 and the receiving device 4, and starting the transmitting device 1, the light modulation device 2, the receiving device 4 and the remote terminal equipment;
s2: the method comprises the steps that a first terahertz wave is sent to an optical modulation device 2 through a transmitting device 1, the first terahertz wave transmitted by the transmitting device 1 is subjected to spatial coding to form a second terahertz wave with spatial distribution, and the second terahertz wave penetrates through an object to be detected 3 to obtain a third terahertz wave containing internal structure image data of the object to be detected 3;
s3: receiving the third terahertz waves by the receiving device 4, converting the third terahertz waves into electric signals, and sending the electric signals to the remote terminal equipment;
s4: and extracting image data from the electric signal through the remote terminal equipment and constructing an internal structure image of the object to be measured 3.
Further, in order to improve the condition of whether a product defect exists in the internal structure image for subsequent identification, in this embodiment, a first image with higher definition is obtained by processing the internal structure image.
Specifically, the step of processing the internal structure image to obtain a first image includes:
and carrying out smooth denoising processing and gray stretching processing on the internal structure image to obtain a first image with improved definition.
The smooth denoising processing adopts Gaussian filtering, noise points in the image can be removed, and the definition of the image is improved. The contrast of the image can be improved through gray stretching treatment, and the definition of the image is further improved.
In another embodiment, the step of processing the internal structure image to obtain a first image further includes:
carrying out smooth denoising processing and gray stretching processing on the internal structure image, and then carrying out binarization processing to obtain a binarization image;
and carrying out edge detection on the binary image to obtain a contour region of the semiconductor product, and removing a background region in the binary image to obtain the first image.
In the embodiment, the contour region of the semiconductor product is acquired from the binarized image through the edge detection technology, the background region in the binarized image is removed, and the detection region is reduced, so that the accuracy of identifying the internal structure image is improved, and the data processing pressure of the system is reduced.
It should be noted that, for simplicity of description, the above-mentioned embodiments are described as a series of acts, but those skilled in the art will recognize that the present invention is not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the invention. Further, those skilled in the art should also appreciate that the embodiments described in the specification are preferred embodiments and that the acts and modules referred to are not necessarily required by the invention.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus may be implemented in other manners. For example, the above-described embodiments of the apparatus are merely illustrative, and for example, the above-described division of the units is only one type of division of logical functions, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or communication connection may be an indirect coupling or communication connection between devices or units through some interfaces, and may be in a telecommunication or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The above examples are only used to illustrate the technical solutions of the present invention, and do not limit the scope of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from these embodiments without making any inventive step, fall within the scope of the present invention. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art may still make various combinations, additions, deletions or other modifications of the features of the embodiments of the present invention according to the situation without conflict, so as to obtain different technical solutions without substantially departing from the spirit of the present invention, and these technical solutions also fall within the protection scope of the present invention.
Claims (7)
1. A system for imaging internal structures of a semiconductor product, comprising:
a transmitting device for transmitting a first terahertz wave;
the light modulation device is arranged close to the transmitting end of the transmitting device and used for carrying out spatial coding on the first terahertz wave transmitted by the transmitting device to form second terahertz waves with spatial distribution and penetrating through an object to be detected to obtain third terahertz waves containing internal structure image data of the object to be detected;
a receiving device arranged opposite to the light modulation device and used for receiving the third terahertz wave and converting the third terahertz wave into an electric signal; and
the remote terminal equipment is electrically connected with the receiving device and used for receiving the electric signal and extracting the image data to construct an internal structure image of the object to be detected;
the light modulation device includes:
the spatial light modulator is arranged between the transmitting device and the object to be detected;
a semiconductor laser disposed on the peripheral side of the spatial light modulator; and
the digital light processor is arranged between the semiconductor laser and the spatial light modulator, and a mask picture consistent with the internal structure outline image of the object to be detected is stored in the digital light processor;
laser emitted by the semiconductor laser is imaged on the spatial light modulator through the digital light processor, and a photo-generated carrier layer corresponding to the mask picture is formed on one side surface, facing the emitting device, of the spatial light modulator;
the system further comprises:
the first lens is arranged between the transmitting device and the spatial light modulator and used for converting the first terahertz wave transmitted by the transmitting device from a divergent light beam into a parallel light beam, the spatial light modulator is provided with a scanning point array, and the range of the scanning point array on the spatial light modulator covers the projection range of the first terahertz wave after passing through the first lens.
2. The system for imaging internal structure of semiconductor product as claimed in claim 1, wherein said emitting means comprises a femtosecond laser and a photoconductive emitter;
the receiving device is a photoconductive detector.
3. The semiconductor product internal structure imaging system according to claim 2, wherein said light modulation device further comprises: and the second lens is arranged between the semiconductor laser and the digital light processor and is used for focusing the laser emitted by the semiconductor laser on the digital light processor.
4. The system for imaging internal structures of semiconductor products as recited in claim 1, further comprising:
and the signal amplifier is arranged between the object to be measured and the receiving device and is used for filtering noise in the third terahertz wave.
5. An imaging method of an imaging system for an internal structure of a semiconductor product, comprising:
placing an object to be tested between the light modulation device and the receiving device, and starting the transmitting device, the light modulation device, the receiving device and the remote terminal equipment;
the method comprises the steps that a first terahertz wave is sent to a light modulation device through a transmitting device, the first terahertz wave transmitted by the transmitting device is subjected to spatial coding to form a second terahertz wave with spatial distribution, and the second terahertz wave penetrates through an object to be detected to obtain a third terahertz wave containing internal structure image data of the object to be detected;
receiving the third terahertz waves by the receiving device, converting the third terahertz waves into electric signals, and sending the electric signals to the remote terminal equipment;
extracting image data from the electric signal through remote terminal equipment and constructing an internal structure image of the object to be detected;
the light modulation device includes:
the spatial light modulator is arranged between the transmitting device and the object to be detected;
a semiconductor laser disposed on the peripheral side of the spatial light modulator; and
the digital light processor is arranged between the semiconductor laser and the spatial light modulator, and a mask picture consistent with the internal structure outline image of the object to be detected is stored in the digital light processor;
laser emitted by the semiconductor laser is imaged on the spatial light modulator through the digital light processor, and a photo-generated carrier layer corresponding to the mask picture is formed on one side surface, facing the emitting device, of the spatial light modulator;
the method further comprises the following steps:
the first terahertz wave emitted by the emitting device is converted into parallel beams from divergent beams through a first lens arranged between the emitting device and the spatial light modulator, a scanning point array is arranged on the spatial light modulator, and the range of the scanning point array on the spatial light modulator covers the projection range of the first terahertz wave after passing through the first lens.
6. The imaging method of the imaging system of the internal structure of the semiconductor product according to claim 5, wherein after the step of extracting image data from the electrical signal by the remote terminal device and constructing the image of the internal structure of the object to be measured, the method further comprises a processing step of:
and carrying out smooth denoising processing and gray stretching processing on the internal structure image to obtain a first image with improved definition.
7. The imaging method of the imaging system of the internal structure of the semiconductor product as claimed in claim 6, wherein the step of performing the smoothing denoising process and the gray stretching process on the image of the internal structure to obtain the first image with the improved definition comprises:
carrying out smooth denoising processing and gray stretching processing on the internal structure image, and then carrying out binarization processing to obtain a binarization image;
and carrying out edge detection on the binary image to obtain a contour region of the object to be detected, and removing a background region in the binary image to obtain the first image.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011128946.8A CN112014329B (en) | 2020-10-21 | 2020-10-21 | Imaging system and method for internal structure of semiconductor product |
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