WO2018032621A1 - Micro component transfer method and apparatus, and electronic device - Google Patents

Micro component transfer method and apparatus, and electronic device Download PDF

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Publication number
WO2018032621A1
WO2018032621A1 PCT/CN2016/104866 CN2016104866W WO2018032621A1 WO 2018032621 A1 WO2018032621 A1 WO 2018032621A1 CN 2016104866 W CN2016104866 W CN 2016104866W WO 2018032621 A1 WO2018032621 A1 WO 2018032621A1
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WIPO (PCT)
Prior art keywords
micro
substrate
transferring
component
components
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PCT/CN2016/104866
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French (fr)
Chinese (zh)
Inventor
徐宸科
郑建森
邵小娟
林科闯
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厦门市三安光电科技有限公司
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Publication of WO2018032621A1 publication Critical patent/WO2018032621A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present invention relates to a micro-component for display, and more particularly to a transfer method for a micro-element, a micro-component device, and an electronic device including the micro-component device.
  • Micro-element technology refers to an array of minute-sized components that are integrated at a high density on a substrate.
  • micro-light-emitting diode (Micro LED) technology is becoming a hot research topic, and the industry expects high-quality micro-component products to enter the market.
  • High-quality micro-pitch LED products can have a profound impact on traditional display products such as LCD/OL ED that are already on the market.
  • a micro-element is first formed on a donor substrate, and then the micro-element is transferred onto a receiving substrate.
  • the receiving substrate is, for example, a display screen.
  • One difficulty in the fabrication of microcomponents is how to transfer the microcomponents from the donor substrate to the receiving substrate.
  • the transposition head faces a second substrate, and the micro-element is desorbed by the desorption ability of the bionic gecko material to release the desired micro-element on the second substrate.
  • the number of the micro-components is plural, wherein step (2) only adsorbs some of the micro-components
  • the number of the micro-components is plural, wherein step (3) only desorbs part of the micro-components
  • the angle between the rigid pile structure and the micro-component exceeds a minimum critical angle at which desorption is performed.
  • the transposition head has a protrusion density on its surface ranging from 1 x 10 5 to 1 x 10 14 protrusions per cm 2 .
  • the bionic gecko material is selected from silicone rubber or polyurethane or polyester resin or polyimide or artificial rubber or epoxy resin or polydimethylsiloxane or polyurethane and terephthalic acid. Ethylene diester or polymethyl methacrylate or multi-walled carbon nanotubes or any combination of the foregoing.
  • the first substrate is a growth substrate or a carrier substrate.
  • the micro-element is a wafer or a light-emitting diode or a laser diode that has not undergone a wafer dicing process.
  • an electronic device comprising a microcomponent device according to the invention
  • FIG. 1 is a flow chart of a method of fabricating a micro-component device in accordance with an embodiment of the present invention.
  • FIG. 5 is an SEM image of the rigid pile structure 301 of FIG.
  • FIG. 9 is a schematic diagram showing an intermediate step of another method of fabricating a micro-component device according to Embodiment 2 of the present invention.
  • FIG. 10 to 12 are schematic diagrams of a display screen having a two-dimensional array type micro-pitch RGB LED chip according to Embodiment 3 of the present invention, wherein FIG. 11 is an enlarged schematic view of the partial LED chip of FIG. 10, and FIG. 12 is an LED chip of FIG. A schematic cross-sectional view.
  • FIGS. 13 to 15 are schematic diagrams showing the process steps of fabricating a display screen having a two-dimensional array type micropitch RGB LED chip according to Embodiment 3 of the present invention.
  • FIG. 1 shows a method of transferring a micro-element, which mainly includes process steps S100 to S300, which will be described below in conjunction with FIGS. 2-8.
  • a first substrate 100 is provided, which may be a growth substrate or a carrier substrate.
  • a carrier substrate is preferred.
  • the material of the carrier substrate may be glass, silicon, or polycarbonate (Polycarbonate, PC). ), Acrylonitrile Butadiene Styrene (ABS) or any combination thereof.
  • PC Polycarbonate
  • ABS Acrylonitrile Butadiene Styrene
  • the micro-components may be wafers or light-emitting diodes or laser diodes that have not been subjected to a wafer dicing process.
  • the micro-components are thin light-emitting diodes (Thin Light-emitting Diodes).
  • the thickness can range from about 0.5 ⁇ to about 100 ⁇ .
  • the shape of the micro-element 200 may be a cylinder, and the radius of the cylinder may be about 0.5 ⁇ m to about 500 ⁇ m.
  • the micro-element 200 may also be a triangular cylinder, a cube, a rectangular parallelepiped, a hexagonal cylinder, and an octagonal cylinder. Or other polygonal cylinders.
  • a transposition head 300 is provided that is fabricated from a bionic gecko material that faces the micro-element 200 on the first substrate.
  • Bionic gecko materials can be made of silicone rubber or polyurethane or polyester resin or polyimide or synthetic rubber or epoxy resin or polydimethylsiloxane or polyurethane with ethylene terephthalate or polymethyl Methyl acrylate or multi-walled carbon nanotubes or any combination of the foregoing.
  • the transposition head 300 contacts the micro-element 200 on the first substrate and is applied to a pre-pressure such as 80 to 100 ⁇ .
  • the surface of the transposition head 300 includes a micro/nano composited fluff structure 301 (shown in Figure 5), such as a protrusion density having a range of lxlO 5 to 1 x 10 14 protrusions per cm 2 .
  • the rigid pile structure made of the bionic gecko material contacts the surface of the micro-component to generate van der Waals force, and has an adhesion function, thereby adsorbing the micro-element to extract the desired micro-element 200, as shown in FIG.
  • the surface of the fluff structure is preferably hydrophobic, which prevents the formation of a water layer on the contact surface and minimizes the possible effect of capillary forces. Reducing the gap and providing van der Waals forces play an important role.
  • the micro-elements can be extracted all at once or only partially as needed. Further, the qualified micro-component transfer can be partially extracted, leaving the remaining unqualified micro-components; the unqualified micro-components can also be extracted, and the qualified micro-components are left on the first substrate, thereby improving the goodness of the micro-component transfer process. rate.
  • a second substrate 400 is provided, and the transposition head 300 faces the second substrate 400.
  • the second substrate serves as a receiving substrate, and may be selected from automotive glass, glass sheets, flexible electronic substrates such as flexible films with circuits, display back sheets, solar glass, metals, polymers, polymer composites, and glass fibers.
  • the micro-element 200 is desorbed by the desorption ability of the bionic gecko material to release the desired micro-element on the second substrate 400.
  • the desorption process of the transposition head 300 releasing the micro-element 200 can be achieved by sliding a certain distance (for example, 5 ⁇ 10 ⁇ ), changing the angle between the rigid pile structure and the micro-component, and preferably the angle a exceeds the minimum critical angle for desorption. (The threshold values of different materials are different, and this embodiment takes 30° as an example) It is easy to cause desorption.
  • the second substrate 400 may be an active device array substrate or a passive device array substrate.
  • the active device array substrate is preferred, and thus the second substrate 400 and the micro device 200 will form an active display panel, but is not limited thereto.
  • the second substrate 400 and the micro-element 200 may also form a light-emitting device.
  • the micro-components can be released all at once or partially as needed. Further, the qualified micro-components may be partially released, leaving the remaining unqualified micro-components; the unqualified micro-components may also be released, and the qualified micro-components are left on the first substrate, thereby improving the yield during the transfer of the micro-components. .
  • the device fabricated by the micro-component transfer method of the present embodiment can be widely used in an electronic device, which can be a mobile phone, a tablet computer or the like.
  • the micro-element described in the first embodiment is a light-emitting diode that has been subjected to a wafer dicing process, and the micro-element 200 of the embodiment is not yet subjected to a wafer dicing process.
  • the wafer includes a chip region 210 and a scribe region 220. Since the transposed head rigid structure made of the bionic gecko material has a strong adsorption function on the micro-component, the transposition head does not need to be formed in a size or shape matching the wafer, so that the transposition head 300 can be fully utilized. Adaptability without special processing.
  • LED chip lateral dimension (X) + lateral spacing (X); LED chip lateral line width (Y) LED chip lateral dimension (Y) + lateral spacing (Y).
  • the upper surface of the two-dimensional array type micro-pitch RGB three-primary color LED chip is electrically connected through a transparent electrode (such as ITO) to avoid light absorption or shading;
  • a transparent electrode such as ITO
  • the lower surface of the trichromatic LED chip can be provided with ITO or sapphire (A1 2 0 3 ) or metal (Metal)
  • the method for fabricating the above array type micro-pitch LED display screen comprises the following process steps:
  • a blue film having R-LED, G-LED, and B-LED chips respectively is provided, and the blue film does not need to be expanded, and is used as a first substrate for carrying an LED chip;
  • a receiving substrate is provided as the second substrate.
  • steps (a) to (c) are repeated several times until the LED chip string is covered with the second substrate (receiving substrate); R-LED, G-LED, B-LED chip string sequentially Arranged adjacent to each other, and through an transparent electrode (ITO) as an electrical connection wire, thereby producing an array type micro-pitch light emitting diode (Micro LED) display device
  • the number of LED chip strings that are captured each time can be adjusted according to the size of the display device and the size of the LED chip. In this embodiment, it is preferable to capture 50 to 60 pieces at a time.
  • This embodiment adopts a high-resolution chip sorting device and uses selective area transfer technology (Selective
  • the micro-component transfer method provided by the present invention in the process for fabricating a device, taking a light-emitting diode as a micro-element as an example, can be transferred only once to produce a monochromatic light-emitting diode, or can be transferred multiple times, for example, making RGB three.
  • the base color is mixed with a white light emitting diode suitable for electronic devices such as display components (such as Embodiment 3).

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Dicing (AREA)

Abstract

A micro component transfer method and apparatus, and an electronic device. The transfer method comprises steps of: placing at least one micro component (200) on a first substrate (100); enabling a transfer head (300) made of a biomimetic gecko material to face and contact with the micro component, and absorbing the micro component by means of the adhesive capability of the biomimetic gecko material, so as to extract a required micro component; and enabling the transfer head to face a second substrate (400), and desorbing the micro component by means of the desorption capability of the biomimetic gecko material, so as to release the required micro component on the second substrate.

Description

微元件的转移方法、 装置及电子设备  Micro component transfer method, device and electronic device
技术领域  Technical field
[0001] 本发明涉及用于显示的微元件， 更具体地， 涉及一种用于微元件的转移方法、 一种微元件装置以及一种包含微元件装置的电子设备。  [0001] The present invention relates to a micro-component for display, and more particularly to a transfer method for a micro-element, a micro-component device, and an electronic device including the micro-component device.
背景技术  Background technique
[0002] 微元件技术是指在衬底上以高密度集成的微小尺寸的元件阵列。 目前， 微间距 发光二极管 （Micro LED) 技术逐渐成为研究热门， 工业界期待有高品质的微元 件产品进入市场。 高品质微间距发光二极管产品会对市场上已有的诸如 LCD/OL ED的传统显示产品产生深刻影响。  [0002] Micro-element technology refers to an array of minute-sized components that are integrated at a high density on a substrate. At present, micro-light-emitting diode (Micro LED) technology is becoming a hot research topic, and the industry expects high-quality micro-component products to enter the market. High-quality micro-pitch LED products can have a profound impact on traditional display products such as LCD/OL ED that are already on the market.
[0003] 在制造微元件的过程中， 首先在施体基板上形成微元件， 接着将微元件转移到 接收基板上。 接收基板例如是显示屏。 在制造微元件过程中的一个困难在于： 如何将微元件从施体基板上转移到接收基板上。  [0003] In the process of fabricating a micro-element, a micro-element is first formed on a donor substrate, and then the micro-element is transferred onto a receiving substrate. The receiving substrate is, for example, a display screen. One difficulty in the fabrication of microcomponents is how to transfer the microcomponents from the donor substrate to the receiving substrate.
技术问题  technical problem
[0004] 传统转移微元件的方法为借由基板接合 （Wafer Bonding) 将微元件自转移基板 转移至接收基板。 转移方法的其中一种实施方法为直接转移， 也就是直接将微 元件阵列自转移基板接合至接收基板， 之后再将转移基板移除。 另一种实施方 法为间接转移。 此方法包含两次接合 /剥离的步骤， 首先， 转移基板自施体基板 提取微元件阵列， 接着转移基板再将微元件阵列接合至接收基板， 最后再把转 移基板移除。 其中， 提取微元件阵列一般通过静电拾取的方式来执行。 在静电 拾取的过程中需要使用转移头阵列。 转移头阵列的结构相对复杂， 并需要考虑 它的可靠性。 制造转移头阵列需要额外的成本。 在利用转移头阵列的拾取之前 需要产生相位改变。 另外， 在使用转移头阵列的制造过程中， 微元件用于相位 改变的热预算受到限制， 通常小于 350°C， 或者更具体地， 小于 200°C; 否则， 微 元件的性能会劣化。  [0004] A conventional method of transferring micro-elements is to transfer micro-elements from a transfer substrate to a receiving substrate by wafer bonding. One of the implementation methods of the transfer method is direct transfer, that is, directly bonding the micro-element array from the transfer substrate to the receiving substrate, and then removing the transfer substrate. Another method of implementation is indirect transfer. The method comprises two steps of joining/stripping. First, the transfer substrate extracts the array of microelements from the donor substrate, then transfers the substrate and then bonds the array of microelements to the receiving substrate, and finally removes the transferred substrate. Among them, the extraction micro-element array is generally performed by means of electrostatic pickup. An array of transfer heads is required during electrostatic pickup. The structure of the transfer head array is relatively complex and needs to be considered for its reliability. Manufacturing transfer head arrays requires additional cost. A phase change needs to be generated before picking up the transfer head array. In addition, in the manufacturing process using the transfer head array, the thermal budget of the micro-component for phase change is limited, usually less than 350 ° C, or, more specifically, less than 200 ° C; otherwise, the performance of the micro-component may deteriorate.
问题的解决方案  Problem solution
技术解决方案 [0005] 针对上述问题， 本发明提出了一种微元件的转移方法、 装置及电子设备。 Technical solution In view of the above problems, the present invention provides a method, device, and electronic device for transferring a micro component.
[0006] 根据本发明的第一个方面， 一种微元件的转移方法， 其特征在于： 所述微元件 的转移方法包含步骤： According to a first aspect of the present invention, a method for transferring a micro-component, characterized in that: the method for transferring the micro-component comprises the steps of:
[0007] (1) 在第一基板上放置至少一个微元件；  [0007] (1) placing at least one micro-component on the first substrate;
[0008] (2) 采用仿生壁虎材料制作而成的转置头， 朝向并接触所述微元件， 藉由仿 生壁虎材料的粘附能力吸附所述微元件， 以提取所需的微元件； 以及 [0008] (2) a transposition head made of a bionic gecko material, facing and contacting the micro-component, adsorbing the micro-element by the adhesion ability of the bionic gecko material to extract the desired micro-component;
[0009] (3) 转置头朝向一第二基板， 藉由仿生壁虎材料的脱附能力脱附所述微元件 ， 以释放所需的微元件于所述第二基板上。  [0009] (3) The transposition head faces a second substrate, and the micro-element is desorbed by the desorption ability of the bionic gecko material to release the desired micro-element on the second substrate.
[0010] 优选地， 所述微元件的数量为多个， 其中步骤 （2) 仅将部分所述微元件吸附 [0010] Preferably, the number of the micro-components is plural, wherein step (2) only adsorbs some of the micro-components
， 以提取所需的微元件。 To extract the required micro-components.
[0011] 优选地， 所述微元件的数量为多个， 其中步骤 （3) 仅将部分所述微元件脱附 [0011] Preferably, the number of the micro-components is plural, wherein step (3) only desorbs part of the micro-components
， 以释放所需的微元件。 To release the required micro-components.
[0012] 优选地， 所述转置头表面包括微纳米复合的刚绒毛结构。  [0012] Preferably, the surface of the transposition head comprises a micro-nano composite rigid pile structure.
[0013] 优选地， 所述脱附通过改变刚绒毛结构与微元件的夹角实现。 [0013] Preferably, the desorption is achieved by changing the angle between the rigid pile structure and the microcomponent.
[0014] 优选地， 所述刚绒毛结构与微元件的夹角超过得以脱附的最小临界角。 [0014] Preferably, the angle between the rigid pile structure and the micro-component exceeds a minimum critical angle at which desorption is performed.
[0015] 优选地， 所述转置头在其表面上具有范围为 1x10 5至 1x10 14个突起每 cm 2的突 起密度。 [0015] Preferably, the transposition head has a protrusion density on its surface ranging from 1 x 10 5 to 1 x 10 14 protrusions per cm 2 .
[0016] 优选地， 所述仿生壁虎材料选用硅橡胶或聚亚胺酯或聚酯树脂或聚酰亚胺或人 造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基丙 烯酸甲酯或多壁碳纳米管或前述任意组合。  [0016] Preferably, the bionic gecko material is selected from silicone rubber or polyurethane or polyester resin or polyimide or artificial rubber or epoxy resin or polydimethylsiloxane or polyurethane and terephthalic acid. Ethylene diester or polymethyl methacrylate or multi-walled carbon nanotubes or any combination of the foregoing.
[0017] 优选地， 所述第一基板为生长基板或者承载基板。  [0017] Preferably, the first substrate is a growth substrate or a carrier substrate.
[0018] 优选地， 所述微元件为尚未进行晶片切割工艺的晶圆或者发光二极管或者激光 二极管。 [0018] Preferably, the micro-element is a wafer or a light-emitting diode or a laser diode that has not undergone a wafer dicing process.
[0019] 优选地， 所述第二基板为主动元件阵列基板或被动元件阵列基板。  [0019] Preferably, the second substrate is an active device array substrate or a passive device array substrate.
[0020] 根据本发明的第二个方面， 提供了一种使用根据本发明的转移方法制造的微元 [0020] According to a second aspect of the invention, there is provided a micro-component manufactured using the transfer method according to the invention
[0021] 根据本发明的第三个方面， 提供了一种电子设备， 包含根据本发明的微元件装 [0022] 另外， 本领域技术人员应当理解， 尽管现有技术中存在许多问题， 但是， 本发 明的每个实施例或权利要求的技术方案可以仅在一个或几个方面进行改进， 而 不必同吋解决现有技术中或者背景技术中列出的全部技术问题。 本领域技术人 员应当理解， 对于一个权利要求中没有提到的内容不应当作为对于该权利要求 的限制。 [0021] According to a third aspect of the invention there is provided an electronic device comprising a microcomponent device according to the invention [0022] In addition, those skilled in the art should understand that although there are many problems in the prior art, the technical solutions of each embodiment or the claims of the present invention may be improved in only one or several aspects, and need not be the same.吋Resolve all technical problems listed in the prior art or in the background art. It should be understood by those skilled in the art that what is not mentioned in a claim should not be construed as a limitation.
发明的有益效果  Advantageous effects of the invention
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0023] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。  The drawings are intended to provide a further understanding of the invention, and are intended to be a part of the description of the invention. In addition, the drawing figures are a summary of the description and are not drawn to scale.
[0024] 图 1为根据本发明实施的一种微元件装置制作方法的流程图。 1 is a flow chart of a method of fabricating a micro-component device in accordance with an embodiment of the present invention.
[0025] 图 2~图8为根据本发明实施例 1的一种微元件装置制作方法的过程示意图， 其中 图 5为图 4刚绒毛结构 301的 SEM图。 2 to FIG. 8 are schematic diagrams showing the process of fabricating a micro-component device according to Embodiment 1 of the present invention, wherein FIG. 5 is an SEM image of the rigid pile structure 301 of FIG.
[0026] 图 9为根据本发明实施例 2的另一种微元件装置制作方法的中间步骤示意图。 9 is a schematic diagram showing an intermediate step of another method of fabricating a micro-component device according to Embodiment 2 of the present invention.
[0027] 图 10~12为根据本发明实施例 3的具有二维阵列式微间距 RGB LED芯片的显示 屏示意图， 其中图 11为图 10的局部 LED芯片放大示意图， 图 12为图 11的 LED芯片 剖视示意图。 10 to 12 are schematic diagrams of a display screen having a two-dimensional array type micro-pitch RGB LED chip according to Embodiment 3 of the present invention, wherein FIG. 11 is an enlarged schematic view of the partial LED chip of FIG. 10, and FIG. 12 is an LED chip of FIG. A schematic cross-sectional view.
[0028] 图 13~15为根据本发明实施例 3的制作具有二维阵列式微间距 RGB LED芯片的 显示屏的工艺步骤示意图。  13 to 15 are schematic diagrams showing the process steps of fabricating a display screen having a two-dimensional array type micropitch RGB LED chip according to Embodiment 3 of the present invention.
[0029] 图中标示： 100: 第一基板； 200: 微元件； 201 : 芯片区； 220: 切割道区； 30[0029] In the figure: 100: first substrate; 200: micro-component; 201: chip area; 220: dicing area; 30
0： 转置头； 301： 刚绒毛结构； 400: 第二基板。 0: transposition head; 301: rigid pile structure; 400: second substrate.
本发明的实施方式 Embodiments of the invention
[0030] 现在将参照附图来详细描述本发明的各种示例性实施例。 应注意到： 除非另外 具体说明， 否则在这些实施例中阐述的部件和步骤的相对布置、 数字表达式和 数值不限制本发明的范围。 [0031] 以下对至少一个示例性实施例的描述实际上仅仅是说明性的， 决不作为对本发 明及其应用或使用的任何限制。 [0030] Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, numerical expressions and numerical values set forth in the embodiments are not intended to limit the scope of the invention unless otherwise specified. [0031] The following description of the at least one exemplary embodiment is merely illustrative and is in no way
[0032] 对于相关领域普通技术人员已知的技术、 方法和设备可能不作详细讨论， 但在 适当情况下， 所述技术、 方法和设备应当被视为说明书的一部分。 Techniques, methods and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but the techniques, methods and apparatus should be considered as part of the specification, where appropriate.
[0033] 实施例 1 Embodiment 1
[0034] 图 1显示了一种微元件的转移方法， 其主要包括了工艺步骤 S100~S300， 下面结 合图 2~8进行说明。  1 shows a method of transferring a micro-element, which mainly includes process steps S100 to S300, which will be described below in conjunction with FIGS. 2-8.
[0035] 如图 2所示， 提供一第一基板 100， 该基板可以是生长基板或者承载基板， 本实 施例优选承载基板， 承载基板的材质可为玻璃、 硅、 聚碳酸酯 （Polycarbonate, PC) 、 丙烯腈-丁二烯-苯乙烯 （Acrylonitrile Butadiene Styrene, ABS) 或其任意 组合。 应该了解到， 以上所举的承载基板的具体实施方式仅为例示， 并非用以 限制本发明， 本发明所属技术领域中具有通常知识者， 应视实际需要， 灵活选 择第一基板 100的具体实施方式。 在第一基板 100上放置若干个微元件 200， 微元 件可以是尚未进行晶片切割工艺的晶圆或者发光二极管或者激光二极管， 本实 施例优选微元件为薄膜发光二极管 （Thin Light-emitting Diode) ， 厚度可为约 0.5 μηι至约 100μηι。 微元件 200的形状可为圆柱体， 且圆柱体的半径可为约 0.5μηι至 约 500μηι， 但并不限于此， 微元件 200还可以为三角柱体、 立方体、 长方体、 六 角柱体、 八角柱体或者其他多角柱体。  [0035] As shown in FIG. 2, a first substrate 100 is provided, which may be a growth substrate or a carrier substrate. In this embodiment, a carrier substrate is preferred. The material of the carrier substrate may be glass, silicon, or polycarbonate (Polycarbonate, PC). ), Acrylonitrile Butadiene Styrene (ABS) or any combination thereof. It should be understood that the specific embodiments of the above-mentioned carrier substrate are merely illustrative and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains, the specific implementation of the first substrate 100 should be flexibly selected according to actual needs. the way. A plurality of micro-elements 200 are disposed on the first substrate 100. The micro-components may be wafers or light-emitting diodes or laser diodes that have not been subjected to a wafer dicing process. In this embodiment, the micro-components are thin light-emitting diodes (Thin Light-emitting Diodes). The thickness can range from about 0.5 μηι to about 100 μηι. The shape of the micro-element 200 may be a cylinder, and the radius of the cylinder may be about 0.5 μm to about 500 μm. However, the micro-element 200 may also be a triangular cylinder, a cube, a rectangular parallelepiped, a hexagonal cylinder, and an octagonal cylinder. Or other polygonal cylinders.
[0036] 如图 3所示， 提供一转置头 300， 采用仿生壁虎材料制作而成， 朝向位于第一基 板上的微元件 200。 仿生壁虎材料可以选用硅橡胶或聚亚胺酯或聚酯树脂或聚酰 亚胺或人造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或 聚甲基丙烯酸甲酯或多壁碳纳米管或前述任意组合。  [0036] As shown in FIG. 3, a transposition head 300 is provided that is fabricated from a bionic gecko material that faces the micro-element 200 on the first substrate. Bionic gecko materials can be made of silicone rubber or polyurethane or polyester resin or polyimide or synthetic rubber or epoxy resin or polydimethylsiloxane or polyurethane with ethylene terephthalate or polymethyl Methyl acrylate or multi-walled carbon nanotubes or any combination of the foregoing.
[0037] 如图 4所示， 转置头 300接触位于第一基板上的微元件 200， 施加于预压力， 比 如 80~100ηΝ。 转置头 300的表面包括微纳米复合的刚绒毛结构 301 (如图 5所示） ， 比如是具有范围为 lxlO 5至 1x10 14个突起每 cm 2的突起密度。 藉由仿生壁虎材 料制作而成的刚绒毛结构接触微元件表面产生范德华力， 具有粘附作用， 从而 吸附微元件， 以提取所需微元件 200， 如图 6所示。 刚绒毛结构的表面优选具有 憎水性， 可以阻止接触面上水层的形成， 尽可能地减小毛细力的可能作用， 对 减小间隙， 提供范德华力起着重要的作用。 微元件可以一次性全部提取， 也可 以根据需要仅部分提取。 进一步地， 可以部分提取合格微元件转移， 留下剩余 的不合格微元件； 也可以提取不合格微元件， 而在第一基板上留下合格微元件 ， 如此可以提升微元件转移过程中的良率。 As shown in FIG. 4, the transposition head 300 contacts the micro-element 200 on the first substrate and is applied to a pre-pressure such as 80 to 100 η. The surface of the transposition head 300 includes a micro/nano composited fluff structure 301 (shown in Figure 5), such as a protrusion density having a range of lxlO 5 to 1 x 10 14 protrusions per cm 2 . The rigid pile structure made of the bionic gecko material contacts the surface of the micro-component to generate van der Waals force, and has an adhesion function, thereby adsorbing the micro-element to extract the desired micro-element 200, as shown in FIG. The surface of the fluff structure is preferably hydrophobic, which prevents the formation of a water layer on the contact surface and minimizes the possible effect of capillary forces. Reducing the gap and providing van der Waals forces play an important role. The micro-elements can be extracted all at once or only partially as needed. Further, the qualified micro-component transfer can be partially extracted, leaving the remaining unqualified micro-components; the unqualified micro-components can also be extracted, and the qualified micro-components are left on the first substrate, thereby improving the goodness of the micro-component transfer process. rate.
[0038] 如图 7所示， 提供一第二基板 400， 转置头 300朝向该第二基板 400。 第二基板作 为接收基板， 可以选用汽车玻璃、 玻璃片、 柔性电子基底诸如有电路的柔性膜 、 显示器背板、 太阳能玻璃、 金属、 聚合物、 聚合物复合物， 以及玻璃纤维。  As shown in FIG. 7, a second substrate 400 is provided, and the transposition head 300 faces the second substrate 400. The second substrate serves as a receiving substrate, and may be selected from automotive glass, glass sheets, flexible electronic substrates such as flexible films with circuits, display back sheets, solar glass, metals, polymers, polymer composites, and glass fibers.
[0039] 如图 8所示， 藉由仿生壁虎材料的脱附能力脱附微元件 200， 以释放所需微元件 于第二基板 400上。 转置头 300释放微元件 200的脱附过程可以通过一定距离的滑 移 （如 5~10μηι) ， 改变刚绒毛结构与微元件的夹角实现， 优选夹角 a超过得以脱 附的最小临界角 （不同材料临界值不一样， 本实施例以 30°为例） 容易产生脱附 。 第二基板 400可以是主动元件阵列基板或被动元件阵列基板， 在本实施方式中 ， 优选主动元件阵列基板， 因此第二基板 400与微元件 200将形成主动显示面板 ， 但并不限于此。 第二基板 400与微元件 200也可以形成发光装置。 微元件可以 一次性全部释放， 也可以根据需要部分释放。 进一步地， 可以部分释放合格微 元件， 留下剩余的不合格微元件； 也可以释放不合格微元件， 而在第一基板上 留下合格微元件， 如此可以提升微元件转移过程中的良率。  As shown in FIG. 8, the micro-element 200 is desorbed by the desorption ability of the bionic gecko material to release the desired micro-element on the second substrate 400. The desorption process of the transposition head 300 releasing the micro-element 200 can be achieved by sliding a certain distance (for example, 5~10μηι), changing the angle between the rigid pile structure and the micro-component, and preferably the angle a exceeds the minimum critical angle for desorption. (The threshold values of different materials are different, and this embodiment takes 30° as an example) It is easy to cause desorption. The second substrate 400 may be an active device array substrate or a passive device array substrate. In the present embodiment, the active device array substrate is preferred, and thus the second substrate 400 and the micro device 200 will form an active display panel, but is not limited thereto. The second substrate 400 and the micro-element 200 may also form a light-emitting device. The micro-components can be released all at once or partially as needed. Further, the qualified micro-components may be partially released, leaving the remaining unqualified micro-components; the unqualified micro-components may also be released, and the qualified micro-components are left on the first substrate, thereby improving the yield during the transfer of the micro-components. .
[0040] 采用本实施例的微元件转移方法制作的装置， 可以广泛用于电子设备中， 该电 子设备可以是手机、 平板电脑等。  [0040] The device fabricated by the micro-component transfer method of the present embodiment can be widely used in an electronic device, which can be a mobile phone, a tablet computer or the like.
[0041] 实施例 2  Embodiment 2
[0042] 如图 9所示， 与实施例 1不同的是， 实施例 1所述的微元件为已经进行晶片切割 工艺得到的发光二极管， 而本实施例的微元件 200为尚未进行晶片切割工艺的晶 圆， 该晶圆包括芯片区 210和切割道区 220。 由于藉由仿生壁虎材料制作而成的 转置头刚绒毛结构对于微元件具有强吸附作用， 因此转置头无需制作成与晶圆 相匹配的尺寸大小或者形状， 从而可以充分发挥转置头 300的适应性， 而不需要 特别加工制作。  [0042] As shown in FIG. 9, different from the first embodiment, the micro-element described in the first embodiment is a light-emitting diode that has been subjected to a wafer dicing process, and the micro-element 200 of the embodiment is not yet subjected to a wafer dicing process. The wafer includes a chip region 210 and a scribe region 220. Since the transposed head rigid structure made of the bionic gecko material has a strong adsorption function on the micro-component, the transposition head does not need to be formed in a size or shape matching the wafer, so that the transposition head 300 can be fully utilized. Adaptability without special processing.
[0043] 实施例 3  Embodiment 3
[0044] 如图 10所示， 以制作尺寸为 138.1mm*67mm的显示屏为例， 其具有 1334x750颗 二维阵列式微间距 RGB三基色 LED芯片， 其中 LED芯片的横向线宽 (X) 为 103μ m， 纵向线宽 （Y) 为 89μηι， LED芯片的横向尺寸 （X) 为 93μηι， 纵向尺寸 （Υ ) 为 80μηι， 横向间距 （X) 为 10μηι， 纵向间距 （Υ) 为 9μηι; LED芯片的横向线 宽 (X) = [0044] As shown in FIG. 10, taking a display screen having a size of 138.1 mm*67 mm as an example, it has 1334×750 Two-dimensional array type micro-pitch RGB three-primary color LED chip, wherein the lateral width (X) of the LED chip is 103 μm, the longitudinal line width (Y) is 89 μm, and the lateral dimension (X) of the LED chip is 93 μm, and the longitudinal dimension (Υ) 80μηι, the lateral spacing (X) is 10μηι, the longitudinal spacing (Υ) is 9μηι; the lateral line width (X) of the LED chip =
LED芯片的横向尺寸 （X) +横向间距 (X) ； LED芯片的横向线宽 （Y) = LED 芯片的横向尺寸 （Y) +横向间距 （Y) 。  LED chip lateral dimension (X) + lateral spacing (X); LED chip lateral line width (Y) = LED chip lateral dimension (Y) + lateral spacing (Y).
[0045] 如图 1 1~ 12所示， 二维阵列式微间距 RGB三基色 LED芯片的上表面通过透明电 极 （如 ITO) 作为导线， 实现各 LED芯片电性连接， 避免吸光或遮光现象； RGB 三基色 LED芯片的下表面可以设置 ITO或者蓝宝石 （A1 20 3) 或金属 （Metal) [0045] As shown in FIG. 11 to 12, the upper surface of the two-dimensional array type micro-pitch RGB three-primary color LED chip is electrically connected through a transparent electrode (such as ITO) to avoid light absorption or shading; RGB The lower surface of the trichromatic LED chip can be provided with ITO or sapphire (A1 2 0 3 ) or metal (Metal)
[0046] 上述阵列式微间距 LED显示屏的制作方法， 包括以下工艺步骤： [0046] The method for fabricating the above array type micro-pitch LED display screen comprises the following process steps:
[0047] 如图 13所示， 提供分别具有 R-LED、 G-LED、 B-LED芯片的蓝膜片， 该蓝膜片 不需扩膜， 作为第一基板， 用于承载 LED芯片； 并提供一接收基板， 作为第二基 板。  [0047] As shown in FIG. 13, a blue film having R-LED, G-LED, and B-LED chips respectively is provided, and the blue film does not need to be expanded, and is used as a first substrate for carrying an LED chip; A receiving substrate is provided as the second substrate.
[0048] 如图 14所示， 步骤 (a) : 通过高分辨的芯片分选装置， 采用仿生壁虎材料制作而 成的转置头， 朝向并接触具有 R-LED芯片的蓝膜片， 藉由仿生壁虎材料的粘附能 力吸附 R-LED芯片， 从而抓取一连续的 R-LED芯片串， 并藉由仿生壁虎材料的脱 附能力脱附 R-LED芯片串， 从而将 R-LED芯片串释放至第二基板 （接收基板） ， 即实现所需的 R-LED芯片串从第一基板转移至第二基板上， 如遇具有缺陷的芯片 则跳过， 直至抓取符合连续的光电参数合格的 R-LED芯片串； 步骤 (b) : 通过高 分辨的芯片分选装置， 采用仿生壁虎材料制作而成的转置头， 朝向并接触具有 G -LED芯片的蓝膜片， 藉由仿生壁虎材料的粘附能力吸附 G-LED芯片， 从而抓取 一连续的 G-LED芯片串， 并藉由仿生壁虎材料的脱附能力脱附 G-LED芯片串， 从而将 G-LED芯片串释放至第二基板 （接收基板） ， 即实现所需的 G-LED芯片 串从第一基板转移至第二基板上， 如遇具有缺陷的芯片则跳过， 直至抓取符合 连续的光电参数合格的 G-LED芯片串； 步骤 (c) : 通过高分辨的芯片分选装置， 采用仿生壁虎材料制作而成的转置头， 朝向并接触具有 B-LED芯片的蓝膜片， 藉 由仿生壁虎材料的粘附能力吸附 B-LED芯片， 从而抓取一连续的 B-LED芯片串， 并藉由仿生壁虎材料的脱附能力脱附 B-LED芯片串， 从而将 B-LED芯片串释放至 第二基板 （接收基板） ， 即实现所需的 B-LED芯片串从第一基板转移至第二基板 上， 如遇具有缺陷的芯片则跳过， 直至抓取符合连续的光电参数合格的 B-LED芯 片串。 [0048] As shown in FIG. 14, step (a): a high-resolution chip sorting device, a transposition head made of bionic gecko material, facing and contacting a blue film having an R-LED chip, by The adhesion ability of the bionic gecko material adsorbs the R-LED chip, thereby grabbing a continuous R-LED chip string, and desorbing the R-LED chip string by the desorption ability of the bionic gecko material, thereby arranging the R-LED chip string Release to the second substrate (receiving substrate), that is, to realize the transfer of the required R-LED chip string from the first substrate to the second substrate, skipping if there is a defective chip, until the grab conforms to the continuous photoelectric parameter R-LED chip string; Step (b): Using a high-resolution chip sorting device, a transposition head made of bionic gecko material, facing and contacting the blue diaphragm with the G-LED chip, by bionic gecko The adhesion ability of the material adsorbs the G-LED chip, thereby grabbing a continuous G-LED chip string, and desorbing the G-LED chip string by the desorption ability of the bionic gecko material, thereby releasing the G-LED chip string to Second substrate (receiving substrate), that is, to achieve the required G - the LED chip string is transferred from the first substrate to the second substrate, and skipped in the case of a defective chip until the G-LED chip string conforming to the continuous photoelectric parameter is captured; step (c): by high resolution The chip sorting device adopts a transposition head made of bionic gecko material, faces and contacts the blue diaphragm with the B-LED chip, and absorbs the B-LED chip by the adhesion ability of the bionic gecko material, thereby grasping a continuous B-LED chip string, And desorbing the B-LED chip string by the desorption ability of the bionic gecko material, thereby releasing the B-LED chip string to the second substrate (receiving substrate), that is, realizing the transfer of the required B-LED chip string from the first substrate On the second substrate, if there is a chip with defects, it is skipped until the B-LED chip string that meets the continuous photoelectric parameters is picked up.
[0049] 如图 15所示， 重复步骤 (a)~(c)若干次， 直至 LED芯片串布满第二基板 （接收基 板） ； R-LED、 G-LED、 B-LED芯片串依次相邻排列， 并通过透明电极 （ITO) 作为电性连接导线， 从而制得阵列式微间距发光二极管 （Micro LED) 显示器件  [0049] As shown in FIG. 15, steps (a) to (c) are repeated several times until the LED chip string is covered with the second substrate (receiving substrate); R-LED, G-LED, B-LED chip string sequentially Arranged adjacent to each other, and through an transparent electrode (ITO) as an electrical connection wire, thereby producing an array type micro-pitch light emitting diode (Micro LED) display device
[0050] 进一步地， 每次抓取的 LED芯片串颗的数目可以视显示装置的尺寸、 LED芯片 尺寸大小进行调整， 本实施例以每次抓取 50~60颗为佳。 [0050] Further, the number of LED chip strings that are captured each time can be adjusted according to the size of the display device and the size of the LED chip. In this embodiment, it is preferable to capture 50 to 60 pieces at a time.
[0051] 本实施例通过高分辨的芯片分选装置， 并采用选择性区域转印技术 （Selective[0051] This embodiment adopts a high-resolution chip sorting device and uses selective area transfer technology (Selective
Area Bonding) ， 将第一基板 （蓝膜片） 上的芯片以整串形式转移至第二基板 （ 接收基板） ， 速度快， 成本低， 精度高 （误差≤2μηι) ； 此外由于第一基板 （蓝 膜片） 不需要扩膜， 转移效率高。 Area Bonding), transferring the chip on the first substrate (blue film) to the second substrate (receiving substrate) in a whole series, with high speed, low cost and high precision (error ≤ 2μηι); Blue diaphragm) does not require film expansion and has high transfer efficiency.
[0052] 本发明提供的微元件转移方法， 在用于制作装置过程中， 以发光二极管作为微 元件为例， 可以仅转移一次， 制作单色发光二极管， 也可以转移多次， 比如制 作 RGB三基色混合发出白光的发光二极管， 适用于显示屏组件等电子设备 （如 实施例 3) 。 [0052] The micro-component transfer method provided by the present invention, in the process for fabricating a device, taking a light-emitting diode as a micro-element as an example, can be transferred only once to produce a monochromatic light-emitting diode, or can be transferred multiple times, for example, making RGB three. The base color is mixed with a white light emitting diode suitable for electronic devices such as display components (such as Embodiment 3).
尽管已经描述本发明的示例性实施例， 但是理解的是， 本发明不应限于这些示 例性实施例而是本领域的技术人员能够在如下文的权利要求所要求的本发明的 精神和范围内进行各种变化和修改。  Although the exemplary embodiments of the present invention have been described, it is understood that the invention is not to be construed as being limited to the exemplary embodiments. Make various changes and modifications.

Claims

权利要求书 Claim
一种微元件的转移方法， 其特征在于： 所述微元件的转移方法包含步 骤：  A method for transferring a micro-element, characterized in that: the method for transferring the micro-element comprises the steps of:
( 1) 在第一基板上放置至少一个微元件；  (1) placing at least one micro-component on the first substrate;
(2) 采用仿生壁虎材料制作而成的转置头， 朝向并接触所述微元件 (2) A transposition head made of bionic gecko material, facing and contacting the micro-component
， 藉由仿生壁虎材料的粘附能力吸附所述微元件， 以提取所需的微元 件； 以及 Adsorbing the micro-elements by the adhesion of the bionic gecko material to extract the desired micro-components;
(3) 转置头朝向一第二基板， 藉由仿生壁虎材料的脱附能力脱附所 述微元件， 以释放所需的微元件于所述第二基板上。  (3) The transposition head faces a second substrate, and the micro-element is desorbed by the desorption ability of the bionic gecko material to release the desired micro-element on the second substrate.
根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述微 元件的数量为多个， 其中步骤 （2) 仅将部分所述微元件吸附， 以提 取所需的微元件。  The method for transferring a micro-element according to claim 1, wherein: the number of the micro-elements is plural, wherein step (2) only adsorbs part of the micro-components to extract desired micro-components. .
根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述微 元件的数量为多个， 其中步骤 （3) 仅将部分所述微元件脱附， 以释 放所需的微元件。  A method for transferring a micro-element according to claim 1, wherein: the number of the micro-elements is plural, wherein step (3) only desorbs part of the micro-elements to release desired micro-components element.
根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述转 置头表面包括微纳米复合的刚绒毛结构。  A method of transferring a micro-component according to claim 1, wherein: said surface of said transfer head comprises a micro-nano composite rigid pile structure.
根据权利要求 4所述的一种微元件的转移方法， 其特征在于： 所述脱 附通过改变刚绒毛结构与微元件的夹角实现。  A method of transferring a microcomponent according to claim 4, wherein: said desorption is achieved by changing an angle between the structure of the fluff and the microcomponent.
根据权利要求 5所述的一种微元件的转移方法， 其特征在于： 所述刚 绒毛结构与微元件的夹角超过得以脱附的最小临界角。  A method of transferring a microcomponent according to claim 5, wherein: the angle between the rigid pile structure and the microcomponent exceeds a minimum critical angle at which desorption is performed.
根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述转 置头在其表面上具有范围为 1x10 5至 1x10 14个突起每 cm 2的突起密度 A method of transferring a micro-component according to claim 1, wherein: said transposition head has a protrusion density on a surface thereof ranging from 1 x 10 5 to 1 x 10 14 protrusions per cm 2
[权利要求 8] 根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述仿 生壁虎材料选用硅橡胶或聚亚胺酯或聚酯树脂或聚酰亚胺或人造橡胶 或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基 丙烯酸甲酯或多壁碳纳米管或前述任意组合。 根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述第 一基板为生长基板或者承载基板。 [Claim 8] A method for transferring a micro-component according to claim 1, wherein: the bionic gecko material is selected from silicone rubber or polyurethane or polyester resin or polyimide or synthetic rubber or Epoxy resin or polydimethylsiloxane or polyurethane with ethylene terephthalate or polymethyl methacrylate or multi-walled carbon nanotubes or any combination of the foregoing. The method of transferring a micro component according to claim 1, wherein the first substrate is a growth substrate or a carrier substrate.
根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述微 元件为尚未进行晶片切割工艺的晶圆或者发光二极管或者激光二极管 根据权利要求 1所述的一种微元件的转移方法， 其特征在于： 所述第 二基板为主动元件阵列基板或被动元件阵列基板。 The method for transferring a micro-component according to claim 1, wherein: the micro-element is a wafer or a light-emitting diode or a laser diode that has not undergone a wafer dicing process, and a micro-element according to claim 1. The transfer method is characterized in that: the second substrate is an active device array substrate or a passive device array substrate.
一种使用根据权利要求 1~11所述的转移方法制造的微元件装置。 一种电子设备， 包含根据权利要求 12所述的微元件装置。 A micro-component device manufactured using the transfer method according to any one of claims 1 to 11. An electronic device comprising the micro-component device of claim 12.
PCT/CN2016/104866 2016-08-16 2016-11-07 Micro component transfer method and apparatus, and electronic device WO2018032621A1 (en)

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