WO2018014568A1 - 一种用于蓝宝石晶片铜抛加工的新工艺 - Google Patents

一种用于蓝宝石晶片铜抛加工的新工艺 Download PDF

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WO2018014568A1
WO2018014568A1 PCT/CN2017/076570 CN2017076570W WO2018014568A1 WO 2018014568 A1 WO2018014568 A1 WO 2018014568A1 CN 2017076570 W CN2017076570 W CN 2017076570W WO 2018014568 A1 WO2018014568 A1 WO 2018014568A1
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polishing
copper
spraying
liquid
polishing liquid
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PCT/CN2017/076570
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French (fr)
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赵能伟
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常州亿晶光电科技有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B39/00—Burnishing machines or devices, i.e. requiring pressure members for compacting the surface zone; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the invention relates to a new technology of copper throwing processing of sapphire wafers, belonging to the field of LED substrate processing.
  • Sapphire is the main substrate material for making blue LEDs today. It is made of high purity alumina through crystal pulling, slicing, grinding, chamfering, annealing, copper polishing, polishing and cleaning.
  • the copper throw is to remove the defects caused by the previous process to the wafer, and the removal amount is generally 20 ⁇ m.
  • Sapphire polishing methods generally have mechanical, chemical and mechanochemical polishing methods.
  • Mechanical polishing is to polish the wafer with hard abrasive, but the Mohs hardness of sapphire is 9 second only to diamond, so it is difficult to polish the surface by mechanical grinding, and the mechanical polishing method makes the surface quality of the substrate not High, and deep subsurface damage, resulting in reduced product performance and processing yield; chemical polishing with low polishing speed and reduced surface topography accuracy; chemical mechanical polishing combines the advantages of mechanical and chemical polishing, There are obvious improvements in polishing rate, polishing precision, and surface damage.
  • the above-mentioned sapphire polishing methods have their own characteristics, but there are problems such as corrosion pits and micro-cracks on the surface after polishing.
  • the present invention proposes a process for improving the scratching of the sapphire surface, and discloses a new process for copper sapphire wafer copper polishing.
  • the subsequent polishing process lays the foundation.
  • the sapphire wafer is usually polished by using a diamond polishing solution. Due to the high hardness of the diamond polishing solution, defects such as scratches on the sapphire wafer are easily formed, so that the subsequent processes cannot be removed; the present invention selects three different hardnesses from high to low.
  • the polishing liquid, the spraying sequence of the fixed polishing liquid, and the spraying time of the polishing liquid are controlled to gradually remove the scratches caused by the previous process, thereby forming a small damage layer on the surface of the final product, so as to reduce the scratching of the surface of the sapphire. .
  • the polishing liquid for sapphire wafer copper polishing as described above includes a diamond polishing liquid, a boron carbide (BC) polishing liquid, and a silicon dioxide (SiO 2 ) polishing liquid.
  • the specific process for copper sapphire wafer copper polishing is:
  • the diamond polishing liquid is sprayed on the polishing liquid machine which sprays the diamond polishing liquid, and is polished for a few minutes to reach a certain amount of removal. Then, the machine is sprayed with a boron carbide polishing liquid to spray the boron carbide polishing liquid, and finally the sprayed dioxide is used.
  • the machine for the silicon polishing liquid sprays the silica polishing liquid, and the ejection time of each polishing liquid in the above-described spraying process is different.
  • the injection time of the diamond polishing liquid is: spraying 2s off for 3s; the injection time of the boron carbide polishing liquid is: spraying 2s off 2s; the spraying time of the silica polishing liquid is: spraying 3s off 1s.
  • the flow rate of the diamond polishing solution, the boron carbide polishing liquid, and the silica polishing liquid is controlled by a constant pressure arc surface injection method, and the flow rate and distribution of the polishing liquid are controlled by controlling the injection time and the spray shape.
  • the sapphire wafer is subjected to copper throwing by the method of the invention, and the hardness of the three polishing liquids is different, so that the removal amount can be improved and the surface scratches can be improved.
  • the arc surface jetting technique is adopted for the polishing liquid.
  • the jet is on the surface of the copper plate.
  • the present invention fixes the spraying order of three kinds of polishing liquids by selecting a polishing liquid having different hardnesses of diamond/carboconium carbide/silica in order from the highest to the bottom, and controls the spraying time of the polishing liquid,
  • the sapphire wafer is subjected to copper polishing, and the previous process is gradually removed to the sapphire wafer.
  • the resulting scratches which in turn cause a small damage layer on the surface of the final product; this method can significantly improve the surface scratches of the sapphire wafer and achieve the required removal, in addition, shorten the production process and reduce production.
  • the cost and the effect achieved are obvious.
  • the copper polishing process of the present invention is carried out according to the following steps:
  • the wafer After the wafer is annealed and cleaned, it is sent to a copper polishing workshop, and a copper blasting machine is provided with a machine for spraying different polishing liquids to perform copper polishing (a. diamond polishing liquid, b. boron carbide polishing liquid, c. silica polishing liquid).
  • a. diamond polishing liquid, b. boron carbide polishing liquid, c. silica polishing liquid a. diamond polishing liquid, b. boron carbide polishing liquid, c. silica polishing liquid.
  • step a the surface having the defect is inspected as a copper throwing surface, and the marking is performed.
  • step b wafers of different thicknesses are distinguished for waxing.
  • step c waxing is performed according to a normal process, and the thickness thereof is measured, and data is recorded.
  • step d copper throwing is performed on a machine equipped with a diamond polishing liquid, and the spraying time of the diamond polishing liquid is: spraying for 2 s for 3 s.
  • step e copper throwing is performed on a machine equipped with a boron carbide polishing liquid, and the injection time of the boron carbide polishing liquid is: spraying for 2 s for 2 s.
  • Step f copper throwing is performed on a machine equipped with a silica polishing liquid, and the injection time of the boron carbide polishing liquid is: spraying for 3 s for 1 s.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

一种蓝宝石晶片铜抛加工的新工艺，属于LED衬底加工领域。通过选择硬度由高到低三种不同的抛光液，并固定抛光液的喷射顺序，控制抛光液的喷射时间，逐步去除前一道工序造成的划痕，使得最终产品表面形成较小的损伤层，来达到减小蓝宝石表面划痕的目的，该工艺操作方法简单，效果明显。

Description

一种用于蓝宝石晶片铜抛加工的新工艺 技术领域
本发明涉及一种蓝宝石晶片铜抛加工的新技术，属于LED衬底加工领域。
背景技术
蓝宝石是当今制作蓝光LED的主要衬底材料。它是由高纯氧化铝经过拉晶、切片、研磨、倒角、退火、铜抛、抛光和清洗工艺制作而成。其中铜抛是为了去除前期制程对晶片产生的缺陷，移除量一般为20μm。
目前，人们提出了很多技术方案来改进蓝宝石的抛光。蓝宝石的抛光方法一般有机械、化学和机械化学的抛光方法。机械抛光是用硬质磨料对晶片抛光，但是蓝宝石的莫氏硬度为9仅次于金刚石，故机械研磨很难将其表面抛光，而且这种靠机械力抛光的加工方法使衬底表面质量不高，而且存在较深的亚表面损伤，导致产品性能和加工成品率降低；化学抛光其抛光速度低而且抛光的表面形貌的精度也会降低；化学机械抛光综合了机械和化学抛光的优势，在抛光速率、抛光精度、表面损伤方面有着明显的提高，以上所述蓝宝石的抛光方法都有其各自的特点，但抛光后表面会出现腐蚀坑和亚表面有微裂缝等问题。
随着LED产品对发光性能的要求越来越高，其对衬底材料—蓝宝石整个制程要求也越来越高。每个制程都会影响后面的制程，尤其是铜抛不好则会影响抛光效果。
发明内容
为了解决现有技术中存在蓝宝石抛光过程中表面划痕明显的技术问题，本发明提出了一种改进蓝宝石表面划痕的工艺方法，公开了一种用于蓝宝石晶片铜抛加工的新工艺，为后续抛光工艺奠定基础。
本发明采用的技术方案为：
现有技术通常采用金刚石抛光液对蓝宝石晶片进行抛光，由于金刚石抛光液的硬度很高，容易对蓝宝石晶片产生划痕等缺陷，以至后续工序无法去除；本发明选用硬度由高到低三种不同的抛光液，固定抛光液的喷射顺序，控制抛光液的喷射时间逐步去除前一道工序造成的划痕，进而使得最终产品表面形成较小的损伤层，以达到减小蓝宝石表面划痕明显的目的。
如上所述用于蓝宝石晶片铜抛的抛光液，包括金刚石抛光液、碳化硼(BC)抛光液、二氧化硅(SiO2)抛光液。
用于蓝宝石晶片铜抛加工的具体工艺过程为：
先在喷射金刚石抛光液的抛光液机台上喷射金刚石抛光液，抛光几分钟达到一定的移除量，随后改用喷射碳化硼抛光液的机台喷射碳化硼抛光液，最后改用喷射二氧化硅抛光液的机台喷射二氧化硅抛光液，上述喷射过程中各抛光液的喷射时间不同。
如上所述金刚石抛光液的喷射时间为：喷2s休3s；碳化硼抛光液的喷射时间为：喷2s休2s；二氧化硅抛光液的喷射时间为：喷3s休1s。
金刚石抛光液、碳化硼抛光液、二氧化硅抛光液的流量采用定压弧面喷射方式控制，通过控制喷射时间和喷射形状控制抛光液流量大小及其分布。
采用本发明方法对蓝宝石晶片进行铜抛，利用三种抛光液的硬度不同，即可达到移除量又可改善其表面划痕，同时，采用弧面喷射技术，是为了抛光液能较为均为的喷射在铜盘表面。
本发明的有益效果：本发明通过选择硬度从高到底依次为金刚石/碳化硼/二氧化硅三种硬度不同的抛光液，固定三种抛光液的喷洒顺序，并控制抛光液的喷洒时间，对蓝宝石晶片进行铜抛加工，逐步去除前一道工序对蓝宝石晶片 造成的划痕，进而使得最终产品表面形成较小的损伤层；该方法可以显著的改善蓝宝石晶片的表面划痕，并且能够达到所需的移除量，此外，还缩短了生产工序，降低生产成本，取得的作用效果明显。
具体实施方式
下面结合实施例作进一步详述：
实施例1：
本发明铜抛加工工序按照如下工序进行：
晶片退火清洗后，送入铜抛车间，在铜抛车间设有喷射不同抛光液的机台进行铜抛(a.金刚石抛光液、b.碳化硼抛光液、c.二氧化硅抛光液)。
具体步骤如下：
a、目检；
b、区分厚度；
c、上蜡；
d、在配备金刚石抛光液的机台铜抛；
e、在配备碳化硼抛光液的机台铜抛；
f、在配备二氧化硅抛光液的机台铜抛。
其中，步骤a，检查出具有缺陷的面作为铜抛面，做好标记。
步骤b，区分出不同厚度的晶片，以便上蜡。
步骤c，按照正常工艺上蜡，并测量其厚度，记录数据。
步骤d，在配备金刚石抛光液的机台进行铜抛，金刚石抛光液的喷射时间为：喷洒2s休3s。
步骤e，在配备碳化硼抛光液的机台进行铜抛，碳化硼抛光液的喷射时间是为：喷洒2s休2s。
步骤f，在配备二氧化硅抛光液的机台进行铜抛，碳化硼抛光液的喷射时间是为：喷洒3s休1s。
表1常规方法与本发明方法抛光后粗糙度和划痕对照表
Figure PCTCN2017076570-appb-000001

Claims (6)

  1. 一种用于蓝宝石晶片铜抛加工的新工艺，其特征在于：所述工艺为：选用硬度由高到低三种不同的抛光液，固定三种抛光液的喷射顺序，喷射过程中控制不同抛光液的喷射时间对蓝宝石晶片进行铜抛加工。
  2. 如权利要求1所述的用于蓝宝石晶片铜抛加工的新工艺，其特征在于：所述硬度由高到低的三种抛光液依次为：金刚石抛光液、碳化硼抛光液、二氧化硅抛光液。
  3. 如权利要求1所述的用于蓝宝石晶片铜抛加工的新工艺，其特征在于：所述抛光液的喷射顺序为：先喷射金刚石抛光液，随后喷射碳化硼抛光液，最后喷射二氧化硅抛光液。
  4. 如权利要求1所述的用于蓝宝石晶片铜抛加工的新工艺，其特征在于：所述每种抛光液的喷射分别在各自的抛光液机台上进行。
  5. 如权利要求1所述的用于蓝宝石晶片铜抛加工的新工艺，其特征在于：所述金刚石抛光液的喷射时间为：喷2s休3s；碳化硼抛光液的喷射时间为：喷2s休2s；二氧化硅抛光液的喷射时间为：喷3s休1s。
  6. 如权利要求1所述的用于蓝宝石晶片铜抛加工的新工艺，其特征在于：所述金刚石抛光液、碳化硼抛光液、二氧化硅抛光液的流量采用定压弧面喷射方式控制。
PCT/CN2017/076570 2016-07-19 2017-03-14 一种用于蓝宝石晶片铜抛加工的新工艺 WO2018014568A1 (zh)

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