WO2018014568A1 - Nouveau procédé de traitement de polissage au cuivre d'une galette en saphir - Google Patents

Nouveau procédé de traitement de polissage au cuivre d'une galette en saphir Download PDF

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Publication number
WO2018014568A1
WO2018014568A1 PCT/CN2017/076570 CN2017076570W WO2018014568A1 WO 2018014568 A1 WO2018014568 A1 WO 2018014568A1 CN 2017076570 W CN2017076570 W CN 2017076570W WO 2018014568 A1 WO2018014568 A1 WO 2018014568A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
copper
spraying
liquid
polishing liquid
Prior art date
Application number
PCT/CN2017/076570
Other languages
English (en)
Chinese (zh)
Inventor
赵能伟
Original Assignee
常州亿晶光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州亿晶光电科技有限公司 filed Critical 常州亿晶光电科技有限公司
Publication of WO2018014568A1 publication Critical patent/WO2018014568A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B39/00—Burnishing machines or devices, i.e. requiring pressure members for compacting the surface zone; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the invention relates to a new technology of copper throwing processing of sapphire wafers, belonging to the field of LED substrate processing.
  • Sapphire is the main substrate material for making blue LEDs today. It is made of high purity alumina through crystal pulling, slicing, grinding, chamfering, annealing, copper polishing, polishing and cleaning.
  • the copper throw is to remove the defects caused by the previous process to the wafer, and the removal amount is generally 20 ⁇ m.
  • Sapphire polishing methods generally have mechanical, chemical and mechanochemical polishing methods.
  • Mechanical polishing is to polish the wafer with hard abrasive, but the Mohs hardness of sapphire is 9 second only to diamond, so it is difficult to polish the surface by mechanical grinding, and the mechanical polishing method makes the surface quality of the substrate not High, and deep subsurface damage, resulting in reduced product performance and processing yield; chemical polishing with low polishing speed and reduced surface topography accuracy; chemical mechanical polishing combines the advantages of mechanical and chemical polishing, There are obvious improvements in polishing rate, polishing precision, and surface damage.
  • the above-mentioned sapphire polishing methods have their own characteristics, but there are problems such as corrosion pits and micro-cracks on the surface after polishing.
  • the present invention proposes a process for improving the scratching of the sapphire surface, and discloses a new process for copper sapphire wafer copper polishing.
  • the subsequent polishing process lays the foundation.
  • the sapphire wafer is usually polished by using a diamond polishing solution. Due to the high hardness of the diamond polishing solution, defects such as scratches on the sapphire wafer are easily formed, so that the subsequent processes cannot be removed; the present invention selects three different hardnesses from high to low.
  • the polishing liquid, the spraying sequence of the fixed polishing liquid, and the spraying time of the polishing liquid are controlled to gradually remove the scratches caused by the previous process, thereby forming a small damage layer on the surface of the final product, so as to reduce the scratching of the surface of the sapphire. .
  • the polishing liquid for sapphire wafer copper polishing as described above includes a diamond polishing liquid, a boron carbide (BC) polishing liquid, and a silicon dioxide (SiO 2 ) polishing liquid.
  • the specific process for copper sapphire wafer copper polishing is:
  • the diamond polishing liquid is sprayed on the polishing liquid machine which sprays the diamond polishing liquid, and is polished for a few minutes to reach a certain amount of removal. Then, the machine is sprayed with a boron carbide polishing liquid to spray the boron carbide polishing liquid, and finally the sprayed dioxide is used.
  • the machine for the silicon polishing liquid sprays the silica polishing liquid, and the ejection time of each polishing liquid in the above-described spraying process is different.
  • the injection time of the diamond polishing liquid is: spraying 2s off for 3s; the injection time of the boron carbide polishing liquid is: spraying 2s off 2s; the spraying time of the silica polishing liquid is: spraying 3s off 1s.
  • the flow rate of the diamond polishing solution, the boron carbide polishing liquid, and the silica polishing liquid is controlled by a constant pressure arc surface injection method, and the flow rate and distribution of the polishing liquid are controlled by controlling the injection time and the spray shape.
  • the sapphire wafer is subjected to copper throwing by the method of the invention, and the hardness of the three polishing liquids is different, so that the removal amount can be improved and the surface scratches can be improved.
  • the arc surface jetting technique is adopted for the polishing liquid.
  • the jet is on the surface of the copper plate.
  • the present invention fixes the spraying order of three kinds of polishing liquids by selecting a polishing liquid having different hardnesses of diamond/carboconium carbide/silica in order from the highest to the bottom, and controls the spraying time of the polishing liquid,
  • the sapphire wafer is subjected to copper polishing, and the previous process is gradually removed to the sapphire wafer.
  • the resulting scratches which in turn cause a small damage layer on the surface of the final product; this method can significantly improve the surface scratches of the sapphire wafer and achieve the required removal, in addition, shorten the production process and reduce production.
  • the cost and the effect achieved are obvious.
  • the copper polishing process of the present invention is carried out according to the following steps:
  • the wafer After the wafer is annealed and cleaned, it is sent to a copper polishing workshop, and a copper blasting machine is provided with a machine for spraying different polishing liquids to perform copper polishing (a. diamond polishing liquid, b. boron carbide polishing liquid, c. silica polishing liquid).
  • a. diamond polishing liquid, b. boron carbide polishing liquid, c. silica polishing liquid a. diamond polishing liquid, b. boron carbide polishing liquid, c. silica polishing liquid.
  • step a the surface having the defect is inspected as a copper throwing surface, and the marking is performed.
  • step b wafers of different thicknesses are distinguished for waxing.
  • step c waxing is performed according to a normal process, and the thickness thereof is measured, and data is recorded.
  • step d copper throwing is performed on a machine equipped with a diamond polishing liquid, and the spraying time of the diamond polishing liquid is: spraying for 2 s for 3 s.
  • step e copper throwing is performed on a machine equipped with a boron carbide polishing liquid, and the injection time of the boron carbide polishing liquid is: spraying for 2 s for 2 s.
  • Step f copper throwing is performed on a machine equipped with a silica polishing liquid, and the injection time of the boron carbide polishing liquid is: spraying for 3 s for 1 s.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un nouveau procédé de traitement de polissage au cuivre d'une tranche en saphir, faisant partie du domaine du traitement des substrats de LED. Les rayures provoquées dans la procédure précédente sont éliminées progressivement en choisissant trois solutions de polissage différentes ayant des duretés allant d'élevée à faible, en fixant l'ordre d'injection des solutions de polissage et en commandant les temps d'injection des solutions de polissage, de sorte qu'une couche endommagée relativement petite est formée sur la surface d'un produit final, ce qui permet de réaliser l'objectif de réduction des rayures sur la surface du saphir. Le procédé est simple à mettre en œuvre et a un effet évident.
PCT/CN2017/076570 2016-07-19 2017-03-14 Nouveau procédé de traitement de polissage au cuivre d'une galette en saphir WO2018014568A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610570690.3A CN106217190A (zh) 2016-07-19 2016-07-19 一种用于蓝宝石晶片铜抛加工的新工艺
CN201610570690.3 2016-07-19

Publications (1)

Publication Number Publication Date
WO2018014568A1 true WO2018014568A1 (fr) 2018-01-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/076570 WO2018014568A1 (fr) 2016-07-19 2017-03-14 Nouveau procédé de traitement de polissage au cuivre d'une galette en saphir

Country Status (2)

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CN (1) CN106217190A (fr)
WO (1) WO2018014568A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106217190A (zh) * 2016-07-19 2016-12-14 常州亿晶光电科技有限公司 一种用于蓝宝石晶片铜抛加工的新工艺
CN114619298B (zh) * 2022-04-22 2023-03-14 中国有色桂林矿产地质研究院有限公司 一种立方氮化硼复合片的抛光方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190890A (ja) * 2005-01-07 2006-07-20 Fuji Photo Film Co Ltd 研磨液及びそれを用いた研磨方法
CN101016438A (zh) * 2007-02-09 2007-08-15 孙韬 碱性计算机硬盘抛光液及其生产方法
CN103506928A (zh) * 2012-06-19 2014-01-15 上海硅酸盐研究所中试基地 超硬半导体材料抛光方法
CN106217190A (zh) * 2016-07-19 2016-12-14 常州亿晶光电科技有限公司 一种用于蓝宝石晶片铜抛加工的新工艺

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6019663A (en) * 1998-02-20 2000-02-01 Micron Technology Inc System for cleaning semiconductor device probe
CN101602185B (zh) * 2009-06-22 2011-04-06 中国科学院上海硅酸盐研究所 碳化硅单晶表面多级化学机械抛光方法
CN103286672B (zh) * 2012-02-29 2015-11-04 上海硅酸盐研究所中试基地 快速获得具有原子台阶表面的SiC晶片抛光方法
CN104907895B (zh) * 2015-06-16 2017-09-29 哈尔滨秋冠光电科技有限公司 蓝宝石双抛片的快速加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190890A (ja) * 2005-01-07 2006-07-20 Fuji Photo Film Co Ltd 研磨液及びそれを用いた研磨方法
CN101016438A (zh) * 2007-02-09 2007-08-15 孙韬 碱性计算机硬盘抛光液及其生产方法
CN103506928A (zh) * 2012-06-19 2014-01-15 上海硅酸盐研究所中试基地 超硬半导体材料抛光方法
CN106217190A (zh) * 2016-07-19 2016-12-14 常州亿晶光电科技有限公司 一种用于蓝宝石晶片铜抛加工的新工艺

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