WO2017195674A1 - Apparatus for manufacturing organic thin film, and method for manufacturing organic thin film - Google Patents
Apparatus for manufacturing organic thin film, and method for manufacturing organic thin film Download PDFInfo
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- WO2017195674A1 WO2017195674A1 PCT/JP2017/017045 JP2017017045W WO2017195674A1 WO 2017195674 A1 WO2017195674 A1 WO 2017195674A1 JP 2017017045 W JP2017017045 W JP 2017017045W WO 2017195674 A1 WO2017195674 A1 WO 2017195674A1
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- Prior art keywords
- temperature
- thin film
- organic thin
- value
- growth rate
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- 239000010409 thin film Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 101
- 230000008020 evaporation Effects 0.000 claims abstract description 99
- 239000011368 organic material Substances 0.000 claims abstract description 63
- 238000013459 approach Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 139
- 238000010438 heat treatment Methods 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 52
- 230000000903 blocking effect Effects 0.000 claims description 26
- 238000005259 measurement Methods 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 description 11
- 230000003247 decreasing effect Effects 0.000 description 6
- 230000003111 delayed effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- the present invention relates to a technique for forming an organic thin film, and more particularly, to a technique for forming an organic thin film by controlling the growth rate of the organic thin film.
- Reference numeral 100 in FIG. 4 is a conventional organic thin film manufacturing apparatus, and has a vacuum chamber 113.
- An evaporation source 112 is disposed inside the vacuum chamber 113.
- the evaporation source 112 has an evaporation container 133, and the film formation target substrate 115 carried into the vacuum chamber 113 passes or is disposed above the evaporation container 133. Yes.
- the evaporation container 133 is hollow, and an organic material 137 made of a powdery organic compound is arranged inside the hollow.
- the evaporation container 133 is provided with a heating device 134, and the heating device 134 is connected to a heating power source 145.
- the inside of the vacuum chamber 113 is evacuated by the evacuation device 128 to form a vacuum atmosphere, and the heating device 134 is energized by the heating power source 145 to generate heat, and the heated heating device 134 heats the evaporation container 133 to rise.
- the organic material 137 that is heated and disposed inside the evaporation container 133 is heated by the evaporation container 133 that has been heated.
- the organic material 137 evaporates (including sublimation), and a large amount of vapor of the organic material 137 is released into the evaporation container 133.
- a discharge hole 138 is provided at a position of the evaporation container 133 facing the film formation target substrate 115, and the generated vapor is discharged from the discharge hole 138 into the vacuum chamber 113 and reaches the surface of the film formation target substrate 115. Then, a thin film of the organic material 137 grows in that portion.
- a growth rate control circuit 114 that controls the growth rate of the thin film of the organic material 137 is disposed outside the vacuum chamber 113. The procedure by which the growth rate control circuit 114 controls the growth rate will be described.
- a film thickness sensor 131 is provided in the vacuum chamber 113, and the film thickness sensor 131 is provided in the growth rate control circuit 114.
- the film thickness measuring device 141 is connected.
- the film thickness sensor 131 is disposed at a side position of the film formation target substrate 115, and the vapor of the organic material 137 released from the evaporation source 112 reaches the film formation target substrate 115 and the film thickness sensor 131.
- a thin film grows on the film formation target substrate 115 and the film thickness sensor 131, and a signal indicating the film thickness detected by the film thickness sensor 131 is output to the film thickness measuring device 141. Finds the growth rate of the thin film according to the input film thickness.
- a signal indicating the obtained growth rate is output to the speed deviation detector 142 as a measurement signal.
- the desired growth rate of the thin film grown on the surface of the film formation target substrate 115 is obtained in advance, converted into the growth rate of the film thickness sensor 131 surface, and stored in the storage device 143 as a reference value.
- a reference signal indicating the reference value is output and input to the speed deviation detector 142.
- the speed deviation detector 142 obtains a magnitude relationship and a difference value between the value (positive and negative signs and absolute value) indicated by the input reference signal and the value indicated by the input measurement signal, and the signed absolute value.
- a deviation signal indicating the deviation is output from the speed deviation detector 142 to the heating power source 145.
- the heating power source 145 decreases the current output to the heating device 134 and the organic material inside the evaporation source 112 The vapor generation amount of 137 is reduced, and the growth rate of the film formation target substrate 115 and the film thickness sensor 131 is decreased.
- the current output to the heating device 134 is increased, and the amount of vapor generated in the organic material 137 inside the evaporation source 112 is increased.
- the growth rate of the film formation target substrate 115 and the film thickness sensor 131 is increased.
- the value of the current supplied to the heating device 134 by adjusting the value of the current supplied to the heating device 134, the variation in the amount of steam generated from the organic material 137 is reduced, and the amount of steam generated is maintained at a constant value. Maintained at the value.
- the amount of current to be increased and the amount of current to be decreased are proportional to the value of the deviation. When the absolute value of the deviation is large, the deviation is controlled so as to approach zero quickly.
- the present invention was created to solve the above-mentioned disadvantages of the prior art, and an object of the present invention is to provide an organic thin film manufacturing apparatus capable of obtaining a stable evaporation rate.
- the present invention provides a vacuum chamber, an organic material disposed therein, an evaporation container that is heated to release vapor of the organic material into the vacuum chamber, and heat is supplied to the evaporation container. And a growth rate controller that controls the release of the vapor, and the growth rate controller controls the amount of heat that the heating device supplies to the evaporation vessel, and A growth rate measuring device for measuring a growth rate of an organic thin film grown on the film formation target by vapor of the organic material released from the evaporation vessel and outputting the measured growth rate; and measuring a temperature of the evaporation vessel.
- a temperature measuring device that outputs the measured temperature; a speed deviation detector that obtains a speed deviation that is a deviation between the input measurement growth rate and a preset reference speed; and the speed deviation is the temperature of the organic material.
- Calculated temperature indicating A converter provided with a conversion relationship for conversion, a temperature deviation that is a deviation between the inputted calculated temperature and the measured temperature is obtained, and the measured temperature approaches the calculated temperature from the value of the temperature deviation.
- a temperature deviation detector that changes the amount of heat supplied to the evaporation container by the heating device, and the conversion relationship is based on the value of the temperature deviation according to the change rate of the amount of heat supplied to the evaporation container. It is an organic thin film manufacturing apparatus set to be changed.
- a reference temperature and a change temperature are set in advance in the growth rate controller, and a proportional temperature obtained by adding a value obtained by multiplying the speed deviation by a proportional coefficient to the reference temperature by the growth rate controller.
- the proportional temperature value is closer to the reference temperature value than the changed temperature value
- the calculated temperature is set closer to the reference temperature than the proportional temperature. It is the organic thin film manufacturing apparatus set up as follows. Further, in the present invention, when the proportional temperature value is farther from the reference temperature value than the changed temperature value, the calculated temperature is a temperature farther from the reference temperature than the proportional temperature. It is an organic thin film manufacturing apparatus set to be.
- a reference temperature and a change temperature are set in advance in the growth rate controller, and a proportional temperature obtained by adding a value obtained by multiplying the speed deviation by a proportional coefficient to the reference temperature by the growth rate controller.
- the proportional temperature value is farther from the reference temperature value than the changed temperature value
- the calculated temperature is set to a temperature farther from the reference temperature than the proportional temperature.
- This invention is an organic thin-film manufacturing apparatus which heats the said organic material by heating the said evaporation container with the heat supplied to the said evaporation container, and heating up the said organic material.
- this invention is an organic thin-film manufacturing apparatus with which the said evaporation container is arrange
- the present invention includes a discharge hole that is disposed in the vacuum chamber and from which the vapor is discharged, and a film thickness sensor in which the organic thin film is formed by the vapor, and the organic thin film on the film thickness sensor
- An organic thin film manufacturing apparatus in which the measured growth rate is required based on a film thickness, wherein the shutter moves between a blocking location between the discharge hole and the film thickness sensor and a reaching location different from the blocking location. And when the shutter is located at the blocking location, the vapor can reach the film formation target, cannot reach the film thickness sensor, and the shutter is located at the arrival location. Is an organic thin film manufacturing apparatus in which the vapor can reach the film formation target and the film thickness sensor.
- a period in which the measured temperature is set to a constant value is provided in one cycle including a shut-off period in which the shutter is located at the shut-off location and an arrival period in which the shutter is located at the reach location.
- It is an organic thin film manufacturing apparatus.
- an evaporation container heated by supplying heat heats an organic material disposed in the evaporation container to generate vapor from the organic material, and the vapor is applied to the surface of a film formation target.
- An organic thin film manufacturing method for forming an organic thin film by reaching a measurement growth rate that is a growth rate of the organic thin film on the film formation target and a measurement temperature that is a temperature of the evaporation container, A speed deviation that is a difference between a preset reference speed and the measured growth speed measured is obtained, and the speed deviation is converted into a calculated temperature by a conversion relationship that associates the value of the speed deviation with a temperature.
- An organic thin film manufacturing method that changes an amount of heat supplied to the evaporation container so that a measured temperature approaches the calculated temperature, wherein the change rate of the amount of heat supplied to the evaporation container is determined by the calculated temperature and the measured evaporation Container temperature An organic thin film manufacturing method of the value corresponding to the value of the temperature deviation between one measured temperature.
- the present invention sets a reference temperature and a change temperature in advance, calculates a proportional temperature that is a temperature obtained by multiplying the speed deviation by a proportional coefficient and adds the result to the reference temperature, and the value of the proportional temperature is the change
- the conversion relationship is an organic thin film manufacturing method that converts the speed deviation into the calculated temperature that is closer to the reference temperature than the proportional temperature.
- the conversion relationship is the calculated temperature that is a temperature farther from the reference temperature than the proportional temperature. It is an organic thin-film manufacturing method which converts into.
- the present invention sets a reference temperature and a change temperature in advance, calculates a proportional temperature that is a temperature obtained by multiplying the speed deviation by a proportional coefficient and adds the result to the reference temperature, and the value of the proportional temperature is the change
- the conversion relationship is the organic thin film manufacturing method that converts the speed deviation into the calculated temperature that is farther from the reference temperature than the proportional temperature.
- the temperature of the evaporation container in which the organic material for generating the vapor is disposed is measured to obtain the measurement temperature, and the measured growth rate is obtained from the growth rate of the organic thin film grown on the film thickness sensor. It is a thin film manufacturing method.
- the present invention provides an organic thin film manufacturing method that changes the rate of change in the amount of heat supplied to the evaporation vessel by heating the evaporation vessel and changing the rate of change in the power supplied to the heating device that heats the organic material. It is.
- the present invention is a location between the discharge hole through which the vapor is discharged and the film thickness sensor, the vapor can reach the film formation target, and a blocking location where the film thickness sensor cannot be reached, Provided with a shutter that moves between the film formation target and the arrival position where the vapor reaches the film thickness sensor, the vapor being provided at a position different from the blocking location, and the shutter is positioned at the blocking location.
- this invention is an organic thin-film manufacturing method which provides the period which makes the said measurement temperature a fixed value in one period which consists of the said interruption
- the amount of heat that the heating device supplies to the evaporation container by comparing the measured temperature of the evaporation container that raises the temperature of the organic material by heat conduction and the calculated temperature that indicates the temperature of the organic material obtained from the measured growth rate. Therefore, the rate of change in the amount of heat does not become too large or too small, and vapor is stably released from the organic material. Further, although it has been difficult to control the growth rate with respect to a specific material or disturbance by the control method based on the conventional technique, according to the present invention, it is possible to perform control independent of the material and the disturbance.
- the block diagram for demonstrating the organic thin film manufacturing apparatus of this invention Graph for explaining the difference between calculated temperature and proportional temperature Graph showing the relationship between time and measured temperature Block diagram for explaining a conventional organic thin film manufacturing apparatus Block diagram for explaining an organic thin film manufacturing apparatus with intermittent control
- the graph which shows an example of the relationship with respect to the time passage of the growth rate on the film-forming target of an organic thin film manufacturing apparatus, and measurement temperature
- symbol 10 of FIG. 1 has shown the organic thin film manufacturing apparatus of this invention.
- the organic thin film manufacturing apparatus 10 includes a vacuum chamber 13, and an evaporation source 12 is disposed inside the vacuum chamber 13.
- the evaporation source 12 has a hollow evaporation container 33, and an organic material 37 made of a powdery organic compound is disposed in the hollow portion.
- the organic thin film manufacturing apparatus 10 includes a main controller 30 and a growth rate controller 14.
- the main controller 30 controls the growth rate controller 14 so that the growth rate controller 14 releases the vapor released from the evaporation vessel 33 into the vacuum chamber 13 (the amount of vapor released per unit time). Control).
- the evaporation source 12 is provided with a heating device 34.
- the growth rate controller 14 has a calorie controller 16, and the heating device 34 heats the evaporation container 33 to raise the temperature when electric power is supplied from the heating power supply 46 arranged in the calorie controller 16.
- the internal organic material 37 is heated by heat conduction by the evaporation container 33 whose temperature has been increased.
- the heating device 34 generates heat when energized by the heating power supply 46, and heats the evaporation container 33 by heat conduction to raise the temperature.
- a vacuum evacuation device 28 is connected to the vacuum chamber 13.
- the vacuum evacuation device 28 operates and the inside of the vacuum chamber 13 is evacuated, a vacuum atmosphere is formed inside the vacuum chamber 13.
- the inside of the evaporation container 33 is evacuated by the evacuation device 28 or another evacuation device to form a vacuum atmosphere.
- the organic material 37 is placed in a vacuum atmosphere and heated to a temperature equal to or higher than the evaporation temperature of the organic material 37 (here, the evaporation temperature includes a sublimation temperature) by the heating device 34, the organic material 37 Steam is generated.
- the vacuum atmosphere inside the vacuum chamber 13 and the vacuum atmosphere inside the evaporation vessel 33 are connected, the vapor of the organic material 37 generated by the evaporation vessel 33 is transferred from the evaporation vessel 33 to the vacuum vessel 13. Is released inside.
- a vapor discharge hole 38 is formed in the ceiling of the evaporation vessel 33, and the evaporation vessel 33 is disposed inside the vacuum chamber 13.
- the vacuum atmosphere inside the vacuum vessel 13 and the inside of the evaporation vessel 33 are Since it is connected to the vacuum atmosphere, the vapor generated from the organic material 37 passes through the vapor discharge hole 38 and is discharged from the inside of the evaporation container 33 into the vacuum chamber 13.
- a device for placing the film formation target is disposed at the film formation position where the vapor discharged from the evaporation container 33 reaches, or the film formation target is placed at the film formation position.
- a device for passing is arranged.
- a substrate holder 39 is provided as a device in which a film formation target is disposed at a film formation position where the vapor reaches, and the film formation target indicated by reference numeral 15 is held by the substrate holder 39.
- a film thickness sensor 31 for measuring the film thickness of the thin film formed on the surface is connected to the growth rate controller 14.
- the film thickness sensor 31 is disposed at a position where the vapor released from the vapor discharge hole 38 can reach the film thickness sensor 31 without blocking the arrival of the vapor to the film formation target 15 inside the vacuum chamber 13. . Therefore, the vapor
- release source here evaporation container 33
- a shutter 35 is provided inside the vacuum chamber 13.
- the shutter 35 is connected to a motor 36, and the motor 36 is controlled by a motor control device 51.
- the motor control device 51 is connected to the main control device 30.
- the shutter 35 moves in the vacuum chamber 13.
- the position can be changed.
- the shutter 35 can be positioned at a blocking location between the film thickness sensor 31 and the vapor discharge hole 38 and at a location different from the blocking location by moving from the blocking location. ing.
- the vapor released from the vapor discharge hole 38 does not reach the film thickness sensor 31 but reaches the film formation target 15 even if it reaches the film formation target 15. Even if the organic thin film grows, the organic thin film does not grow on the film thickness sensor 31.
- the vapor released from the vapor discharge hole 38 reaches the film formation target 15 and the film thickness sensor 31, and An organic thin film grows on the surface and the surface of the film thickness sensor 31.
- the place of the shutter 35 where the organic thin film grows on the surface of the film formation target 15 and the surface of the film thickness sensor 31 is referred to as an “arrival place”.
- the growth rate of the organic thin film formed on the film thickness sensor 31 ("growth rate" is a unit time). And the growth rate of the organic thin film formed on the film formation target 15 are in a proportional relationship, and the value of the proportional constant is a measured thickness value measured in advance. And the measurement time.
- the film thickness and growth rate of the organic thin film formed on the film formation target 15 are calculated from the film thickness and growth rate of the organic thin film formed on the film thickness sensor 31. can do. In the following description, it is assumed that the shutter 35 is not located at the blocking location.
- the growth rate controller 14 has a film thickness measuring device 41, and the film thickness sensor 31 is connected to the film thickness measuring device 41.
- the film thickness sensor 31 outputs a signal corresponding to the film thickness of the attached organic thin film to the film thickness measuring device 41.
- the film thickness measuring device 41 calculates the film thickness from the signal indicating the input film thickness and the measurement time. The growth rate of the film thickness on the thickness sensor 31 is obtained, a signal indicating the value is output as the growth rate of the film thickness sensor 31, and the film thickness measuring device 41 measures the growth rate of the film formation target 15. Film speed is required.
- the film thickness sensor 31 and the film thickness measuring device 41 constitute a growth rate measuring device that measures the growth rate on the film formation target 15 and outputs the measured value as the measured growth rate.
- Reference numeral 40 in FIG. 1 denotes a growth rate measuring device.
- the growth rate controller 14 has a temperature calculator 17.
- the temperature calculator 17 has a speed deviation detector 42, and a signal indicating the measured growth rate is input to the speed deviation detector 42.
- a storage device 49 is preset with a reference speed indicating a reference value for the growth speed of the film formation target 15, and the speed deviation detector 42 determines the measured growth speed and the reference speed.
- a speed deviation that is the difference between the speed and the speed (here, the value of "deviation" consists of an absolute value and a sign indicating positive or negative) is obtained, and a signal indicating the obtained speed deviation is output.
- the temperature calculator 17 is provided with a storage device 49, and the reference speed is stored in the storage device 49 and output from the storage device 49 to the speed deviation detector 42.
- the reference value of the growth rate of the film thickness sensor 31 is set as the reference speed in the speed deviation detector 42. You can also keep it.
- the temperature calculator 17 has a converter 44, and the growth rate controller 14 has a heat quantity controller 16.
- a signal indicating the speed deviation is output to the converter 44.
- the relationship between the speed deviation and the temperature of the organic material is obtained in advance, and is provided in the converter 44 as a conversion relation for converting the speed deviation into a calculated temperature indicating the temperature of the organic material 37.
- the converter 44 converts the speed deviation indicated by the input signal into a calculated temperature indicating the temperature of the organic material 37 according to the conversion relationship, and outputs a signal indicating the calculated temperature to the heat quantity controller 16. Since the calculated temperature is obtained from the measured growth rate, the calculated temperature indicates the temperature of the organic material.
- the heat quantity controller 16 is provided with a temperature deviation detector 45, and a signal indicating the calculated temperature is input to the temperature deviation detector 45.
- the evaporation container 33 is provided with a temperature measuring device 32.
- the temperature measuring device 32 measures the temperature of the evaporation container 33, and a signal indicating the measured temperature is output from the temperature measuring device 32 to the heat quantity controller 16.
- a signal indicating the measured temperature is input to the temperature deviation detector 45.
- the temperature deviation detector 45 calculates a temperature deviation including a difference between the input calculated temperature and the measured temperature, and a positive / negative sign indicating a magnitude relationship between the calculated temperature and the measured temperature.
- the temperature measuring device 32 is a thermocouple.
- the calorific value controller 16 supplies electric power to the heating device 34, supplies heat from the heating device 34 to the organic material 37, and raises the temperature of the organic material 37, and the calorific value controller 16 detects the calculated temperature deviation.
- the rate of change in the amount of heat (the rate of change) supplied to the organic material 37 by the heating device 34 is adjusted so that the power supplied to the heating device 34 is increased or decreased so that the growth rate of the organic thin film formed on the film formation target 15 becomes the reference rate. Is controlling the magnitude of change in heat supplied / time).
- the change rate Q having different values is set so that the growth rate becomes the reference rate. 2 (cal / sec) is changed (Q 1 ⁇ Q 2 ).
- a signal indicating the temperature deviation is input to the heating power source 46, and the heating device 34 for the electric power output from the heating power source 46 based on the value of the temperature deviation and the magnitude relationship between the calculated temperature and the measured temperature.
- the change rate of the heat amount that the heating device 34 supplies to the organic material 37 is changed.
- the calculated temperature calculated by the converter 44 and the measured temperature measured by the temperature measuring device 32 are compared by the calorific value controller 16 and supplied to the heating device 34 according to the obtained temperature deviation. Since the calculated change rate of the electric power is changed and the calculated temperature changes to a value corresponding to the value of the measured growth rate, the calorific value controller 16 uses the calculated temperature at which the value changes as a variable comparison target temperature. The temperature variation, which is the difference between the comparison target temperature and the measured temperature, is obtained to control the power change rate.
- the reference speed input to the speed deviation detector 42 is at a reference temperature that is an ideal temperature at which the organic material 37 in the evaporation container 33 evaporates at a desired evaporation speed. This is the growth rate of the organic thin film grown on the surface of the film formation target 15.
- a velocity deviation indicating a value of zero is output from the velocity deviation detector 42, and the velocity deviation is equal to the reference temperature by the converter 44.
- the value is converted into a calculated temperature and input to the heat quantity controller 16.
- the temperature of the evaporation container 33 is also the reference temperature. Becomes the reference temperature, and the temperature deviation between the calculated temperature and the measured temperature becomes zero. In contrast, when the temperature of the evaporation container 33 and the temperature of the organic material 37 inside the evaporation container 33 are not equal, even when the value of the speed deviation is zero, the temperature deviation between the calculated temperature and the measured temperature does not become zero. . If the measured temperature is higher than the calculated temperature, change the rate of change of heat so that the measured temperature decreases.If the measured temperature is lower than the calculated temperature, change the rate of change of heat so that the measured temperature increases. To do.
- the heating power supply 46 changes the power supplied to the heating device 34 at a change speed corresponding to the sign and magnitude of the temperature deviation.
- the change speed is It becomes zero and the magnitude of the supplied power is not changed and is maintained.
- Each deviation is made up of a sign and an absolute value, and the speed deviation can be determined as to which of the measured growth rate and the reference speed is greater.
- the conversion relationship provided in the converter 44 converts the speed deviation to a calculated temperature that reduces the rate of change in the amount of heat supplied by the heating device 34.
- the conversion relationship is set to convert the speed deviation to a calculated temperature that increases the rate of change of the amount of heat supplied by the heating device 34. As a result, the temperature change increases.
- the change temperature is set in advance in the growth rate controller 14, and if the value obtained by multiplying the speed deviation by a preset proportionality coefficient is added to the reference temperature, the conversion temperature is converted.
- the proportional temperature calculated from the input speed deviation is closer to the reference temperature than the set change temperature
- the calculated temperature for converting the input speed deviation is set to be higher than the proportional temperature calculated from the speed deviation.
- the temperature change becomes small.
- the proportional temperature calculated from the input speed deviation is the same temperature as the set change temperature
- the calculated temperature is set to the reference temperature.
- the change temperature is set to a temperature higher than the reference temperature and a temperature lower than the reference temperature.
- the proportional temperature higher than the reference temperature is compared with the change temperature higher than the reference temperature.
- the proportional temperature lower than the temperature is compared with the change temperature lower than the reference temperature.
- the proportional temperature calculated from the input speed deviation is a temperature that is farther from the reference temperature than the set change temperature
- the calculated temperature for converting the input speed deviation is converted to the speed deviation.
- the temperature is set so as to be farther from the reference temperature than the proportional temperature calculated from the above.
- the horizontal axis of the graph of FIG. 2 indicates the speed deviation, and the value of the origin on the horizontal axis indicates the proportional temperature and the calculated temperature when the speed deviation is zero, that is, the reference temperature. Therefore, the vertical axis indicates the temperature that is the difference between the proportional temperature and the reference temperature, or the difference between the change temperature and the reference temperature.
- the symbol S in FIG. 2 is a curve showing the relationship between the speed deviation and the temperature obtained by subtracting the reference temperature from the proportional temperature obtained from the speed deviation, and the symbol H is a straight line showing the relationship between the speed deviations.
- Reference symbol T 1 is a difference temperature between the change temperature on the higher temperature side than the reference temperature and the reference temperature
- reference symbol T 2 is a difference temperature between the change temperature on the lower temperature side than the reference temperature and the reference temperature.
- Symbols E 1 and E 2 are speed deviations in which the proportional temperature obtained by multiplying the proportional coefficient and the calculated temperature obtained from the conversion relation give the same change temperature
- the curve S and the straight line H are points ( E 1 , T 1 ) and the point (E 2 , T 2 ) intersect.
- the range of the vertical axis where the calculated proportional temperature is closer to the origin (reference temperature) than the change temperature is the temperature range closer to the origin than temperatures T 1 and T 2 , and the speed deviation that gives the temperature range is changed It is in a range closer to the origin than the speed deviations E 1 and E 2 giving the temperature.
- the speed deviation in that range when the difference between the calculated temperature and the reference temperature and the difference between the proportional temperature and the reference temperature are calculated from the same speed deviation, the calculated temperature is closer to the origin than the proportional temperature. It has become.
- the change in the amount of heat supplied to the heating device 34 is smaller than when the change is proportional to the speed deviation, and the organic material 37 does not change beyond the temperature at which the speed deviation is zero.
- the range of the vertical axis where the calculated proportional temperature is farther from the origin (reference temperature) than the change temperature is the temperature range farther from the origin than the temperatures T 1 and T 2 , and the speed deviation giving that temperature range Is a range farther from the origin than the speed deviations E 1 and E 2 giving the change temperature.
- the speed deviation in that range when the difference between the calculated temperature and the reference temperature and the difference between the proportional temperature and the reference temperature are obtained from the same speed deviation, the calculated temperature is more from the origin than the proportional temperature. Have been far away.
- the amount of change in the amount of heat supplied to the heating device 34 is larger than when the amount of heat is changed in proportion to the speed deviation. Since the temperature quickly approaches the temperature at which the deviation becomes zero, the temperature of the organic material 37 is quickly stabilized.
- the graph of FIG. 3A shows a case where the measured temperature approaches the reference temperature from a state lower than the reference temperature
- the graph of FIG. 3B shows the case where the measured temperature is higher than the reference temperature.
- the case where the temperature approaches the reference temperature is shown, and the curve indicating the relationship between the time and the measured temperature finally matches the straight line indicating the reference temperature.
- the signal indicating the measured growth rate output from the growth rate measuring device 40 is input to the velocity deviation detector 42 in the temperature calculator 17 after the high frequency component is removed by the filter 48.
- the value of the speed deviation does not fluctuate unnecessarily.
- the power output from the heating power source 46 may be controlled intermittently, or the growth rate on the film thickness sensor 31 is measured at a constant time interval and the measured growth rate is output. May be. In that case, since it is not necessary for the organic thin film to grow on the surface of the film thickness sensor 31 during the time during which the growth rate is not measured, the time during which the growth rate is not measured is determined when the shutter 35 is positioned at the blocking location. It is only necessary to grow the thin film on the film thickness sensor 31, and the time for the organic thin film to grow on the film thickness sensor 31 is shortened.
- This organic thin film manufacturing apparatus 10A is an apparatus in which an opening / closing controller 43 is provided in the organic thin film manufacturing apparatus 10 of FIG. While the steam reaches the film formation target 15, the shutter 35 is opened and closed. When the shutter 35 is in the closed state, the steam does not reach the film thickness sensor 31. The time required for the vapor to reach the film thickness sensor 31 is shorter than that of the film formation target 15 located within the same vacuum chamber 13.
- the storage device 49 stores the arrival period time during which the shutter 35 is opened and the shut-off period time during which the shutter 35 is closed, and is output to the open / close controller 43 as a set time.
- a control signal is output to the motor control device 51 via the main control device 30, and the opening and closing of the shutter 35 is controlled.
- the shutter 35 is opened, and when the vapor reaches and the organic thin film grows on the surface of the film thickness sensor 31, the arrival period time and the film thickness of the thin film formed between the arrival periods are reached. From these, the measured growth rate of the film thickness sensor 31 and the film formation target 15 can be obtained. The obtained measured growth rate is compared with the reference rate, the velocity deviation and the calculated temperature are obtained, the temperature deviation is output to the heating power supply 46, and the power supplied to the heating device 34 is changed. Therefore, the electric power supplied to the heating device 34 is changed during the arrival period, and the changed value is maintained during the interruption period.
- the growth of the thin film is started at the start time of the arrival period, and the growth of the thin film is stopped at the end time of the arrival period.
- the measured growth rate may be measured between the start time and end time of one arrival period, or the measured growth rate may be obtained by averaging the film thickness measurement values of a plurality of arrival periods.
- the organic thin film manufacturing apparatus 10A calculates the measured growth rate at the end time of the arrival period based on the film thickness increase amount during the arrival period, and reaches the value of the measured growth rate input to the growth rate controller 14. It shall be comprised so that it may change for every end time of a period.
- the graph of FIG. 6 shows an example of the relationship between the growth rate on the film formation target and the measurement temperature over time of the organic thin film manufacturing apparatus 10A.
- one period is defined as the arrival period and the next cutoff period adjacent to the arrival period.
- the film thickness at the first time t 1 that is the start time of the arrival period in one period.
- start the measurement by the measurement ends of the film thickness a second time t 2 is the ending time of the arrival period, and obtains the measurement the growth rate from the grown film thickness measurement time
- measurement growth obtained speed values are output to the second time t 2 the temperature calculator 17 in and compared with the reference speed, the speed deviation between the calculated temperature is determined in this order, it is compared calculated temperature and the measured temperature, the temperature difference Is required.
- the change rate of the electric power supplied to the heating device 34 at the second time t 2 when the measured growth rate is obtained is large. Will be changed.
- the calculated temperature value increases at the second time t 2 , Since the measured temperature is lower than the calculated temperature, the supplied power increases and the measured temperature rises.
- the heating device 34 since the power of the same value are supplied, the measured temperature and elapsed a certain time that is kept at a constant value Become so. That, is provided with a holding period during which the Atsushi Nobori measured temperature is stopped is maintained at a constant value is in the cut-off period, a predetermined time before the third time t 3 when the next arrival period of the blocking period starts Alternatively, the holding period starts at a predetermined time before the fifth time t 5 . Thereafter, in the arrival period from the third time t 3 when the next one cycle starts to the fourth time t 4 , the measured temperature is maintained with the value held at the end of the previous one cycle.
- the measurement growth rate continues to increase even if the measurement temperature is held at a certain value. For this reason, the measured growth rate obtained at the fourth time t 4 becomes larger than the reference rate, and the power supplied to the heating device 34 is decreased and the measured temperature is decreased, contrary to the previous one cycle.
- the measured temperature is changed for a certain time (here, during the interruption period excluding the holding period), and at the other time, the measured temperature is maintained at a constant temperature.
- the measured growth rate is obtained in the period, the difference between the measured growth rate and the reference rate is made small.
- the evaporation container 33 is disposed inside the vacuum chamber 13, but may be disposed outside the vacuum chamber 13.
- the resistance heater is used for the heating apparatus 34, the evaporation container 33 is heated by heat conduction, and also the organic material 37 is heated by the evaporation container 33 heated by heat conduction.
- the temperature of the organic material 37 was controlled by controlling the amount of heat generated by the heating device 34, but the evaporation vessel 33 was heated by heat radiation using an infrared lamp as the heating device 34, An induced current may be passed through the evaporation container 33 to heat the evaporation container 33 directly.
- the “evaporation speed” in the above description means the amount of steam released per unit time, and does not mean the steam flight speed.
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Abstract
Description
蒸発源112は、蒸発容器133を有しており、蒸発容器133の上方位置には、真空槽113の内部に搬入された成膜対象基板115が通過し、又は、配置されるようになっている。
The
蒸発容器133には、加熱装置134が設けられており、加熱装置134は、加熱電源145に接続されている。 The
The
有機材料137が蒸発温度以上に昇温されると、蒸発(昇華を含む)して多量の有機材料137の蒸気が蒸発容器133内に放出される。 The inside of the
When the temperature of the
成長速度制御回路114が、成長速度を制御する手順を説明すると、真空槽113の内部には、膜厚センサ131が設けられており、膜厚センサ131は、成長速度制御回路114内に設けられた膜厚測定器141に接続されている。 In the organic thin
The procedure by which the growth
増加させる電流量と減少させる電流量は、偏差の値に比例しており、偏差の絶対値が大きい場合は、偏差が早くゼロに近づくように制御される。 In this way, by adjusting the value of the current supplied to the
The amount of current to be increased and the amount of current to be decreased are proportional to the value of the deviation. When the absolute value of the deviation is large, the deviation is controlled so as to approach zero quickly.
本発明は、前記成長速度制御器には予め基準温度と変更温度とが設定され、前記成長速度制御器により、前記速度偏差に比例係数が乗算された値が前記基準温度に加えられた比例温度が求められ、前記変換関係は、前記比例温度の値が前記変更温度の値よりも前記基準温度の値に近いときは、前記算出温度を、前記比例温度よりも前記基準温度に近い温度にするように設定された有機薄膜製造装置である。
また、本発明は、前記変換関係は、前記比例温度の値が前記変更温度の値よりも前記基準温度の値から遠いときは、前記算出温度を、前記比例温度よりも前記基準温度から遠い温度にするように設定された有機薄膜製造装置である。
本発明は、前記成長速度制御器には予め基準温度と変更温度とが設定され、前記成長速度制御器により、前記速度偏差に比例係数が乗算された値が前記基準温度に加えられた比例温度が求められ、前記変換関係は、前記比例温度の値が前記変更温度の値よりも前記基準温度の値から遠いときは、前記算出温度を、前記比例温度よりも前記基準温度から遠い温度にするように設定された有機薄膜製造装置である。
本発明は、前記加熱装置は、前記蒸発容器に供給する熱で前記蒸発容器を加熱して昇温させることで、前記有機材料を加熱する有機薄膜製造装置である。
また、本発明は、前記蒸発容器は、前記真空槽の内部に配置された有機薄膜製造装置である。
本発明は、前記真空槽内に配置され、前記蒸気が放出される放出孔と、前記蒸気によって前記有機薄膜が形成される膜厚センサとを有し、前記膜厚センサ上の前記有機薄膜の膜厚から、前記測定成長速度が求められる有機薄膜製造装置であって、前記放出孔と前記膜厚センサとの間の遮断場所と、前記遮断場所とは異なる到達場所との間を移動するシャッタとを有し、前記シャッタが前記遮断場所に位置するときは、前記蒸気は、前記成膜対象物に到達でき、前記膜厚センサには到達できず、前記シャッタが前記到達場所に位置するときは、前記蒸気は、前記成膜対象物と前記膜厚センサとに到達できるようにされた有機薄膜製造装置である。
本発明は、前記シャッタが前記遮断場所に位置する遮断期間と、前記シャッタが前記到達場所に位置する到達期間とから成る一周期中に、前記測定温度が一定値にされる期間が設けられた有機薄膜製造装置である。
本発明は、熱が供給されて加熱された蒸発容器が、前記蒸発容器の中に配置された有機材料を加熱して前記有機材料から蒸気を発生させ、前記蒸気を成膜対象物の表面に到達させて有機薄膜を形成する有機薄膜製造方法であって、前記成膜対象物上の前記有機薄膜の成長速度である測定成長速度と、前記蒸発容器の温度である測定温度とを測定し、予め設定された基準速度と、測定した前記測定成長速度との間の差である速度偏差を求め、前記速度偏差の値を温度に関連付ける変換関係によって、前記速度偏差を算出温度に変換し、前記測定温度が前記算出温度に近づくように、前記蒸発容器に供給する熱量を変化させる有機薄膜の製造方法であり、前記蒸発容器に供給する熱量の変化速度を、前記算出温度と、測定した前記蒸発容器の温度である測定温度との間の温度偏差の値に応じた値にする有機薄膜製造方法である。
本発明は、予め基準温度と変更温度を設定しておき、前記速度偏差に比例係数を乗算した結果を前記基準温度に加えた温度である比例温度を算出し、前記比例温度の値が前記変更温度の値よりも前記基準温度に近いときには、前記変換関係は、前記速度偏差を、前記比例温度よりも前記基準温度に近い温度である前記算出温度に変換する有機薄膜製造方法である。
本発明は、前記比例温度の値が前記変更温度の値よりも前記基準温度から遠いときには、前記変換関係は、前記速度偏差を、前記比例温度よりも前記基準温度から遠い温度である前記算出温度に変換する有機薄膜製造方法である。
本発明は、予め基準温度と変更温度を設定しておき、前記速度偏差に比例係数を乗算した結果を前記基準温度に加えた温度である比例温度を算出し、前記比例温度の値が前記変更温度の値よりも前記基準温度から遠いときには、前記変換関係は、前記速度偏差を、前記比例温度よりも前記基準温度から遠い温度である前記算出温度に変換する有機薄膜製造方法である。
本発明は、前記蒸気を発生させる前記有機材料が配置された前記蒸発容器の温度を測定して前記測定温度とし、膜厚センサに成長する前記有機薄膜の成長速度から前記測定成長速度を求める有機薄膜製造方法である。
本発明は、前記蒸発容器を加熱して、前記有機材料を加熱する加熱装置に供給する電力の変化速度を変更することで、前記蒸発容器に供給する熱量の変化速度を変更する有機薄膜製造方法である。
本発明は、前記蒸気が放出される放出孔と前記膜厚センサとの間の場所であって、前記蒸気は前記成膜対象物に到達でき、前記膜厚センサには到達できない遮断場所と、前記遮断場所とは異なる場所であって、前記蒸気は前記成膜対象物と前記膜厚センサには到達できる到達場所との間を移動するシャッタを設け、前記シャッタを前記遮断場所に位置させて、前記蒸気を前記成膜対象物に到達させ、前記膜厚センサには到達させない遮断期間と、前記シャッタを前記到達場所に位置させて、前記蒸気を前記成膜対象物と前記膜厚センサとに到達させる到達期間とを、交互に設ける有機薄膜製造方法である。
また、本発明は、前記遮断期間と、前記遮断期間に隣接する前記到達期間とから成る一周期中に、前記測定温度を一定値にする期間を設ける有機薄膜製造方法である。 In order to solve the above-described problems, the present invention provides a vacuum chamber, an organic material disposed therein, an evaporation container that is heated to release vapor of the organic material into the vacuum chamber, and heat is supplied to the evaporation container. And a growth rate controller that controls the release of the vapor, and the growth rate controller controls the amount of heat that the heating device supplies to the evaporation vessel, and A growth rate measuring device for measuring a growth rate of an organic thin film grown on the film formation target by vapor of the organic material released from the evaporation vessel and outputting the measured growth rate; and measuring a temperature of the evaporation vessel. A temperature measuring device that outputs the measured temperature; a speed deviation detector that obtains a speed deviation that is a deviation between the input measurement growth rate and a preset reference speed; and the speed deviation is the temperature of the organic material. Calculated temperature indicating A converter provided with a conversion relationship for conversion, a temperature deviation that is a deviation between the inputted calculated temperature and the measured temperature is obtained, and the measured temperature approaches the calculated temperature from the value of the temperature deviation. And a temperature deviation detector that changes the amount of heat supplied to the evaporation container by the heating device, and the conversion relationship is based on the value of the temperature deviation according to the change rate of the amount of heat supplied to the evaporation container. It is an organic thin film manufacturing apparatus set to be changed.
In the present invention, a reference temperature and a change temperature are set in advance in the growth rate controller, and a proportional temperature obtained by adding a value obtained by multiplying the speed deviation by a proportional coefficient to the reference temperature by the growth rate controller. When the proportional temperature value is closer to the reference temperature value than the changed temperature value, the calculated temperature is set closer to the reference temperature than the proportional temperature. It is the organic thin film manufacturing apparatus set up as follows.
Further, in the present invention, when the proportional temperature value is farther from the reference temperature value than the changed temperature value, the calculated temperature is a temperature farther from the reference temperature than the proportional temperature. It is an organic thin film manufacturing apparatus set to be.
In the present invention, a reference temperature and a change temperature are set in advance in the growth rate controller, and a proportional temperature obtained by adding a value obtained by multiplying the speed deviation by a proportional coefficient to the reference temperature by the growth rate controller. When the proportional temperature value is farther from the reference temperature value than the changed temperature value, the calculated temperature is set to a temperature farther from the reference temperature than the proportional temperature. It is the organic thin film manufacturing apparatus set up as follows.
This invention is an organic thin-film manufacturing apparatus which heats the said organic material by heating the said evaporation container with the heat supplied to the said evaporation container, and heating up the said organic material.
Moreover, this invention is an organic thin-film manufacturing apparatus with which the said evaporation container is arrange | positioned inside the said vacuum chamber.
The present invention includes a discharge hole that is disposed in the vacuum chamber and from which the vapor is discharged, and a film thickness sensor in which the organic thin film is formed by the vapor, and the organic thin film on the film thickness sensor An organic thin film manufacturing apparatus in which the measured growth rate is required based on a film thickness, wherein the shutter moves between a blocking location between the discharge hole and the film thickness sensor and a reaching location different from the blocking location. And when the shutter is located at the blocking location, the vapor can reach the film formation target, cannot reach the film thickness sensor, and the shutter is located at the arrival location. Is an organic thin film manufacturing apparatus in which the vapor can reach the film formation target and the film thickness sensor.
In the present invention, a period in which the measured temperature is set to a constant value is provided in one cycle including a shut-off period in which the shutter is located at the shut-off location and an arrival period in which the shutter is located at the reach location. It is an organic thin film manufacturing apparatus.
In the present invention, an evaporation container heated by supplying heat heats an organic material disposed in the evaporation container to generate vapor from the organic material, and the vapor is applied to the surface of a film formation target. An organic thin film manufacturing method for forming an organic thin film by reaching a measurement growth rate that is a growth rate of the organic thin film on the film formation target and a measurement temperature that is a temperature of the evaporation container, A speed deviation that is a difference between a preset reference speed and the measured growth speed measured is obtained, and the speed deviation is converted into a calculated temperature by a conversion relationship that associates the value of the speed deviation with a temperature. An organic thin film manufacturing method that changes an amount of heat supplied to the evaporation container so that a measured temperature approaches the calculated temperature, wherein the change rate of the amount of heat supplied to the evaporation container is determined by the calculated temperature and the measured evaporation Container temperature An organic thin film manufacturing method of the value corresponding to the value of the temperature deviation between one measured temperature.
The present invention sets a reference temperature and a change temperature in advance, calculates a proportional temperature that is a temperature obtained by multiplying the speed deviation by a proportional coefficient and adds the result to the reference temperature, and the value of the proportional temperature is the change When the temperature is closer to the reference temperature than the value of the temperature, the conversion relationship is an organic thin film manufacturing method that converts the speed deviation into the calculated temperature that is closer to the reference temperature than the proportional temperature.
According to the present invention, when the value of the proportional temperature is farther from the reference temperature than the value of the change temperature, the conversion relationship is the calculated temperature that is a temperature farther from the reference temperature than the proportional temperature. It is an organic thin-film manufacturing method which converts into.
The present invention sets a reference temperature and a change temperature in advance, calculates a proportional temperature that is a temperature obtained by multiplying the speed deviation by a proportional coefficient and adds the result to the reference temperature, and the value of the proportional temperature is the change When the temperature is farther from the reference temperature than the temperature value, the conversion relationship is the organic thin film manufacturing method that converts the speed deviation into the calculated temperature that is farther from the reference temperature than the proportional temperature.
In the present invention, the temperature of the evaporation container in which the organic material for generating the vapor is disposed is measured to obtain the measurement temperature, and the measured growth rate is obtained from the growth rate of the organic thin film grown on the film thickness sensor. It is a thin film manufacturing method.
The present invention provides an organic thin film manufacturing method that changes the rate of change in the amount of heat supplied to the evaporation vessel by heating the evaporation vessel and changing the rate of change in the power supplied to the heating device that heats the organic material. It is.
The present invention is a location between the discharge hole through which the vapor is discharged and the film thickness sensor, the vapor can reach the film formation target, and a blocking location where the film thickness sensor cannot be reached, Provided with a shutter that moves between the film formation target and the arrival position where the vapor reaches the film thickness sensor, the vapor being provided at a position different from the blocking location, and the shutter is positioned at the blocking location. The vapor is allowed to reach the film formation target and not to reach the film thickness sensor, the shutter is positioned at the arrival position, and the vapor is supplied to the film formation target and the film thickness sensor. This is an organic thin film manufacturing method in which the reaching periods for reaching to are alternately provided.
Moreover, this invention is an organic thin-film manufacturing method which provides the period which makes the said measurement temperature a fixed value in one period which consists of the said interruption | blocking period and the said arrival period adjacent to the said interruption | blocking period.
また、従来技術に基づく制御方法では特定の材料や外乱に対して成長速度を制御することは困難であったが、本発明によれば材料や外乱に左右されない制御が可能となる。 According to the present invention, the amount of heat that the heating device supplies to the evaporation container by comparing the measured temperature of the evaporation container that raises the temperature of the organic material by heat conduction and the calculated temperature that indicates the temperature of the organic material obtained from the measured growth rate. Therefore, the rate of change in the amount of heat does not become too large or too small, and vapor is stably released from the organic material.
Further, although it has been difficult to control the growth rate with respect to a specific material or disturbance by the control method based on the conventional technique, according to the present invention, it is possible to perform control independent of the material and the disturbance.
この有機薄膜製造装置10は、真空槽13を有しており、真空槽13の内部には、蒸発源12が配置されている。
蒸発源12は、中空の蒸発容器33を有しており、その中空の部分には、粉体状の有機化合物から成る有機材料37が配置されている。 The code |
The organic thin
The
主制御装置30は、成長速度制御器14を制御して、成長速度制御器14が、蒸発容器33から真空槽13の内部に放出される蒸気の放出速度(単位時間当たりに放出される蒸気の量)を制御する。 The organic thin
The
ここでは、加熱装置34は、加熱電源46によって通電されると発熱し、熱伝導によって蒸発容器33を加熱し、昇温させている。 The
Here, the
蒸発容器33の内部は、この真空排気装置28又は別の真空排気装置によって真空排気されて真空雰囲気が形成される。有機材料37は真空雰囲気に置かれた状態で、加熱装置34によって有機材料37の蒸発温度(ここでは、蒸発温度には昇華温度も含む)以上の温度に昇温されると、有機材料37から蒸気が発生する。 A
The inside of the
膜厚センサ31は、真空槽13内部の、成膜対象物15への蒸気の到達を遮らないで、蒸気放出孔38から放出された蒸気が膜厚センサ31に到達できる位置に配置されている。従って、成膜対象物15と膜厚センサ31には、真空槽内に配置された同じ蒸気放出源(ここでは、蒸発容器33)から放出された蒸気が到達する。 A film thickness sensor 31 for measuring the film thickness of the thin film formed on the surface is connected to the growth rate controller 14.
The film thickness sensor 31 is disposed at a position where the vapor released from the
シャッタ35は、モータ36に接続されており、モータ36は、モータ制御装置51によって制御されている。 A
The
膜厚センサ31は、付着した有機薄膜の膜厚に応じた信号を膜厚測定器41に出力しており、膜厚測定器41は入力された膜厚を示す信号と測定時間とから、膜厚センサ31上の膜厚の成長速度を求め、その値を示す信号を、膜厚センサ31の成長速度として出力し、膜厚測定器41によって、成膜対象物15の成長速度である測定成膜速度が求められる。 The growth rate controller 14 has a film thickness measuring device 41, and the film thickness sensor 31 is connected to the film thickness measuring device 41.
The film thickness sensor 31 outputs a signal corresponding to the film thickness of the attached organic thin film to the film thickness measuring device 41. The film thickness measuring device 41 calculates the film thickness from the signal indicating the input film thickness and the measurement time. The growth rate of the film thickness on the thickness sensor 31 is obtained, a signal indicating the value is output as the growth rate of the film thickness sensor 31, and the film thickness measuring device 41 measures the growth rate of the
速度偏差を示す信号は変換器44に出力されている。
速度偏差と有機材料の温度との関係は予め求められており、速度偏差を有機材料37の温度を示す算出温度に変換する変換関係として変換器44に設けられている。
変換器44は入力された信号が示す速度偏差を変換関係によって有機材料37の温度を示す算出温度に変換し、算出温度を示す信号を熱量制御器16に出力する。算出温度は測定成長速度から求められているので、算出温度は有機材料の温度を示している。 The temperature calculator 17 has a
A signal indicating the speed deviation is output to the
The relationship between the speed deviation and the temperature of the organic material is obtained in advance, and is provided in the
The
蒸発容器33には温度測定器32が設けられており、温度測定器32によって、蒸発容器33の温度が測定され、測定温度を示す信号が温度測定器32から熱量制御器16に出力されており、測定温度を示す信号は温度偏差検出器45に入力されている。温度偏差検出器45は、入力された算出温度と測定温度の差と、算出温度と測定温度との間の大小関係を示す正負の符号とから成る温度偏差を算出する。ここでは、温度測定器32は熱電対である。 The heat quantity controller 16 is provided with a
The
その制御の内容を説明すると、先ず、速度偏差検出器42に入力される基準速度は、蒸発容器33内の有機材料37が望ましい蒸発速度で蒸発する理想的な温度である基準温度にあるときに成膜対象物15の表面に成長する有機薄膜の成長速度である。 It is also possible to change the change rate of the amount of heat supplied by speed deviation instead of control based on temperature deviation.
The contents of the control will be explained. First, the reference speed input to the
それとは異なり、蒸発容器33の温度と蒸発容器33の内部の有機材料37の温度とが等しくない場合は、速度偏差の値がゼロのときでも、算出温度と測定温度の温度偏差はゼロにならない。測定温度が算出温度よりも高い場合は、測定温度が低下するように熱量の変化速度を変更し、測定温度が算出温度よりも低い場合は、測定温度が上昇するように熱量の変化速度を変更する。 Assuming that the temperature of the
In contrast, when the temperature of the
各偏差は符号と絶対値とで構成されており、速度偏差についても、その符号によって測定成長速度と基準速度のいずれが大きいかが分かるようになっている。 In this way, the
Each deviation is made up of a sign and an absolute value, and the speed deviation can be determined as to which of the measured growth rate and the reference speed is greater.
速度偏差が測定成長速度は基準速度よりも小さいことを示したときには、変換関係は、加熱装置34が供給する熱量の変化速度を大きくさせる算出温度に速度偏差を変換するように設定されている。その結果、温度変化は大きくなる。 When the speed deviation indicates that the measured growth speed is greater than the reference speed, the conversion relationship provided in the
When the speed deviation indicates that the measured growth speed is smaller than the reference speed, the conversion relationship is set to convert the speed deviation to a calculated temperature that increases the rate of change of the amount of heat supplied by the
入力された速度偏差から算出した比例温度が設定された変更温度と同じ温度である場合は、算出温度は基準温度にされる。
変更温度は、基準温度よりも高温の温度と、基準温度よりも低温の温度とにそれぞれ設定されており、基準温度よりも高温の比例温度は基準温度よりも高温の変更温度と比較され、基準温度よりも低温の比例温度は基準温度よりも低温の変更温度と比較される。 More specifically, the change temperature is set in advance in the growth rate controller 14, and if the value obtained by multiplying the speed deviation by a preset proportionality coefficient is added to the reference temperature, the conversion temperature is converted. When the proportional temperature calculated from the input speed deviation is closer to the reference temperature than the set change temperature, the calculated temperature for converting the input speed deviation is set to be higher than the proportional temperature calculated from the speed deviation. Set the temperature close to the reference temperature. As a result, the temperature change becomes small.
When the proportional temperature calculated from the input speed deviation is the same temperature as the set change temperature, the calculated temperature is set to the reference temperature.
The change temperature is set to a temperature higher than the reference temperature and a temperature lower than the reference temperature. The proportional temperature higher than the reference temperature is compared with the change temperature higher than the reference temperature. The proportional temperature lower than the temperature is compared with the change temperature lower than the reference temperature.
求められた測定成長速度は、基準速度と比較され、速度偏差と算出温度とが求められ、温度偏差が加熱電源46に出力され、加熱装置34に供給される電力が変更される。
従って、加熱装置34に供給される電力は、到達期間中に変更され、遮断期間中は変更した値が維持されるようになっている。 During the arrival period, the
The obtained measured growth rate is compared with the reference rate, the velocity deviation and the calculated temperature are obtained, the temperature deviation is output to the
Therefore, the electric power supplied to the
測定成長速度は、一個の到達期間の開始時刻から終了時刻の間に測定されていてもよいし、複数の到達期間の膜厚測定値を平均して測定成長速度を求めるようにしてもよい。 On the surface of the film thickness sensor 31, the growth of the thin film is started at the start time of the arrival period, and the growth of the thin film is stopped at the end time of the arrival period.
The measured growth rate may be measured between the start time and end time of one arrival period, or the measured growth rate may be obtained by averaging the film thickness measurement values of a plurality of arrival periods.
この図6のグラフでは、到達期間と、その到達期間に隣接した次の遮断期間とで一周期としており、例えば、一周期中の到達期間の開始時刻である第一の時刻t1で膜厚の測定を開始し、到達期間の終了時刻である第二の時刻t2で膜厚の測定を終了して、成長した膜厚と測定時間とから測定成長速度を求めており、求めた測定成長速度の値は、第二の時刻t2で温度算出器17に出力され、基準速度と比較され、速度偏差と算出温度がこの順序で求められ、算出温度が測定温度と比較されて、温度偏差が求められる。 The graph of FIG. 6 shows an example of the relationship between the growth rate on the film formation target and the measurement temperature over time of the organic thin
In the graph of FIG. 6, one period is defined as the arrival period and the next cutoff period adjacent to the arrival period. For example, the film thickness at the first time t 1 that is the start time of the arrival period in one period. start the measurement by the measurement ends of the film thickness a second time t 2 is the ending time of the arrival period, and obtains the measurement the growth rate from the grown film thickness measurement time, measurement growth obtained speed values are output to the second time t 2 the temperature calculator 17 in and compared with the reference speed, the speed deviation between the calculated temperature is determined in this order, it is compared calculated temperature and the measured temperature, the temperature difference Is required.
その後、次の一周期の始まる第三の時刻t3から第四の時刻t4までの到達期間では、先の一周期の最後で保持された値のまま、測定温度が維持される。 Until the fourth time t 4 when determining the next measurement the growth rate in one cycle, the
Thereafter, in the arrival period from the third time t 3 when the next one cycle starts to the fourth time t 4 , the measured temperature is maintained with the value held at the end of the previous one cycle.
このため、第四の時刻t4で求める測定成長速度は、基準速度よりも大きくなり、先の一周期とは逆に、加熱装置34に供給される電力は減少し、測定温度は低下する。 On the other hand, since the temperature change of the organic material is delayed with respect to the temperature change of the evaporation container, the measurement growth rate continues to increase even if the measurement temperature is held at a certain value.
For this reason, the measured growth rate obtained at the fourth time t 4 becomes larger than the reference rate, and the power supplied to the
また、上記実施例では、抵抗加熱ヒータが加熱装置34に用いられており、熱伝導によって、蒸発容器33が加熱され、更に、有機材料37は熱伝導によって昇温した蒸発容器33によって加熱されて昇温しており、加熱装置34の発熱量を制御することで、有機材料37の温度を制御していたが、赤外線ランプを加熱装置34に用いて熱輻射によって蒸発容器33を加熱したり、誘導電流を蒸発容器33に流して蒸発容器33を直接加熱するようにしてもよい。
なお、上記説明中の「蒸発速度」は、蒸気の単位時間当たりの放出量を意味しており、蒸気の飛行速度を意味するものでは無い。 In each of the above embodiments, the
Moreover, in the said Example, the resistance heater is used for the
The “evaporation speed” in the above description means the amount of steam released per unit time, and does not mean the steam flight speed.
13……真空槽
14……成長速度制御器
15……成膜対象物
16……熱量制御器
17……温度算出器
31……膜厚センサ
32……温度測定器
33……蒸発容器
35……シャッタ
37……有機材料
40……成長速度測定器
41……膜厚測定器
42……速度偏差検出器
44……変換器
45……温度偏差検出器
46……加熱電源
49……記憶装置
DESCRIPTION OF
Claims (16)
- 真空槽と、
有機材料が配置され、加熱されて前記真空槽内に前記有機材料の蒸気を放出させる蒸発容器と、
前記蒸発容器に熱を供給して加熱する加熱装置と、
前記蒸気の放出を制御する成長速度制御器と、
を有し、
前記成長速度制御器は、
前記加熱装置が前記蒸発容器に供給する熱量を制御する熱量制御器と、
前記蒸発容器から放出される前記有機材料の蒸気が成膜対象物上に成長させる有機薄膜の成長速度を測定して測定成長速度として出力する成長速度測定器と、
前記蒸発容器の温度を測定し、測定温度として出力する温度測定器と、
入力された前記測定成長速度と、予め設定された基準速度との偏差である速度偏差を求める速度偏差検出器と、
前記速度偏差を前記有機材料の温度を示す算出温度に変換する変換関係が設けられた変換器と、
入力された前記算出温度と、前記測定温度との偏差である温度偏差を求め、前記温度偏差の値から、前記測定温度が前記算出温度に近づくように、前記加熱装置が前記蒸発容器に供給する熱量を変化させる温度偏差検出器と、
を有し、
前記変換関係は、前記蒸発容器に供給する熱量の変化速度を前記温度偏差の値に応じて変更するように設定された有機薄膜製造装置。 A vacuum chamber;
An evaporation vessel in which an organic material is disposed and heated to release vapor of the organic material into the vacuum chamber;
A heating device for supplying heat to the evaporating vessel and heating;
A growth rate controller for controlling the release of the vapor;
Have
The growth rate controller is
A calorific value controller for controlling the amount of heat supplied to the evaporation container by the heating device;
A growth rate measuring device that measures the growth rate of the organic thin film that the vapor of the organic material released from the evaporation container grows on the film formation target and outputs it as a measured growth rate;
A temperature measuring device for measuring the temperature of the evaporation container and outputting the measured temperature;
A speed deviation detector for obtaining a speed deviation which is a deviation between the input measured growth speed and a preset reference speed;
A converter provided with a conversion relationship for converting the speed deviation into a calculated temperature indicating the temperature of the organic material;
A temperature deviation which is a deviation between the inputted calculated temperature and the measured temperature is obtained, and the heating device supplies the evaporation container so that the measured temperature approaches the calculated temperature from the value of the temperature deviation. A temperature deviation detector that changes the amount of heat;
Have
The said conversion relationship is an organic thin film manufacturing apparatus set so that the change rate of the calorie | heat amount supplied to the said evaporation container may be changed according to the value of the said temperature deviation. - 前記成長速度制御器には予め基準温度と変更温度とが設定され、
前記成長速度制御器により、前記速度偏差に比例係数が乗算された値が前記基準温度に加えられた比例温度が求められ、
前記変換関係は、前記比例温度の値が前記変更温度の値よりも前記基準温度の値に近いときは、前記算出温度を、前記比例温度よりも前記基準温度に近い温度にするように設定された請求項1記載の有機薄膜製造装置。 The growth rate controller is preset with a reference temperature and a change temperature,
The growth rate controller obtains a proportional temperature obtained by adding a value obtained by multiplying the rate deviation by a proportionality factor to the reference temperature,
The conversion relationship is set so that when the proportional temperature value is closer to the reference temperature value than the changed temperature value, the calculated temperature is closer to the reference temperature than the proportional temperature. The organic thin film manufacturing apparatus according to claim 1. - 前記変換関係は、前記比例温度の値が前記変更温度の値よりも前記基準温度の値から遠いときは、前記算出温度を、前記比例温度よりも前記基準温度から遠い温度にするように設定された請求項2記載の有機薄膜製造装置。 The conversion relationship is set so that, when the proportional temperature value is farther from the reference temperature value than the changed temperature value, the calculated temperature is set to a temperature farther from the reference temperature than the proportional temperature. The organic thin film manufacturing apparatus according to claim 2.
- 前記成長速度制御器には予め基準温度と変更温度とが設定され、
前記成長速度制御器により、前記速度偏差に比例係数が乗算された値が前記基準温度に加えられた比例温度が求められ、
前記変換関係は、前記比例温度の値が前記変更温度の値よりも前記基準温度の値から遠いときは、前記算出温度を、前記比例温度よりも前記基準温度から遠い温度にするように設定された請求項1記載の有機薄膜製造装置。 The growth rate controller is preset with a reference temperature and a change temperature,
The growth rate controller obtains a proportional temperature obtained by adding a value obtained by multiplying the rate deviation by a proportionality factor to the reference temperature,
The conversion relationship is set so that, when the proportional temperature value is farther from the reference temperature value than the changed temperature value, the calculated temperature is set to a temperature farther from the reference temperature than the proportional temperature. The organic thin film manufacturing apparatus according to claim 1. - 前記加熱装置は、前記蒸発容器に供給する熱で前記蒸発容器を加熱して昇温させることで、前記有機材料を加熱する請求項1記載の有機薄膜製造装置。 2. The organic thin film manufacturing apparatus according to claim 1, wherein the heating device heats the organic material by heating the evaporation vessel with heat supplied to the evaporation vessel and raising the temperature.
- 前記蒸発容器は、前記真空槽の内部に配置された請求項1記載の有機薄膜製造装置。 The organic thin film manufacturing apparatus according to claim 1, wherein the evaporation container is disposed inside the vacuum chamber.
- 前記真空槽内に配置され、前記蒸気が放出される放出孔と、
前記蒸気によって前記有機薄膜が形成される膜厚センサとを有し、
前記膜厚センサ上の前記有機薄膜の膜厚から、前記測定成長速度が求められる有機薄膜製造装置であって、
前記放出孔と前記膜厚センサとの間の遮断場所と、前記遮断場所とは異なる到達場所との間を移動するシャッタとを有し、
前記シャッタが前記遮断場所に位置するときは、前記蒸気は、前記成膜対象物に到達でき、前記膜厚センサには到達できず、前記シャッタが前記到達場所に位置するときは、前記蒸気は、前記成膜対象物と前記膜厚センサとに到達できるようにされた請求項1乃至請求項6のいずれか1項記載の有機薄膜製造装置。 A discharge hole disposed in the vacuum chamber and from which the vapor is discharged;
A film thickness sensor on which the organic thin film is formed by the vapor;
From the film thickness of the organic thin film on the film thickness sensor, an organic thin film manufacturing apparatus in which the measurement growth rate is required,
A shutter that moves between a blocking location between the discharge hole and the film thickness sensor and a reaching location different from the blocking location;
When the shutter is located at the blocking location, the vapor can reach the film formation target, cannot reach the film thickness sensor, and when the shutter is located at the arrival location, the vapor is The organic thin film manufacturing apparatus according to any one of claims 1 to 6, wherein the apparatus can reach the film formation target and the film thickness sensor. - 前記シャッタが前記遮断場所に位置する遮断期間と、前記シャッタが前記到達場所に位置する到達期間とから成る一周期中に、前記測定温度が一定値にされる期間が設けられた請求項7記載の有機薄膜製造装置。 The period during which the measured temperature is set to a constant value is provided in one cycle consisting of a blocking period in which the shutter is positioned at the blocking position and an arrival period in which the shutter is positioned at the reaching position. Organic thin film manufacturing equipment.
- 熱が供給されて加熱された蒸発容器が、前記蒸発容器の中に配置された有機材料を加熱して前記有機材料から蒸気を発生させ、前記蒸気を成膜対象物の表面に到達させて有機薄膜を形成する有機薄膜製造方法であって、
前記成膜対象物上の前記有機薄膜の成長速度である測定成長速度と、前記蒸発容器の温度である測定温度とを測定し、
予め設定された基準速度と、測定した前記測定成長速度との間の差である速度偏差を求め、
前記速度偏差の値を温度に関連付ける変換関係によって、前記速度偏差を算出温度に変換し、
前記測定温度が前記算出温度に近づくように、前記蒸発容器に供給する熱量を変化させる有機薄膜の製造方法であり、
前記蒸発容器に供給する熱量の変化速度を、前記算出温度と、測定した前記蒸発容器の温度である測定温度との間の温度偏差の値に応じた値にする有機薄膜製造方法。 An evaporation container heated and supplied with heat heats an organic material disposed in the evaporation container to generate vapor from the organic material, and causes the vapor to reach the surface of a film formation target to form an organic material. An organic thin film manufacturing method for forming a thin film,
Measuring a measurement growth rate that is a growth rate of the organic thin film on the film formation target and a measurement temperature that is a temperature of the evaporation container;
Determining a speed deviation which is a difference between a preset reference speed and the measured growth speed measured;
The speed deviation is converted into a calculated temperature by a conversion relationship that associates the value of the speed deviation with temperature,
An organic thin film manufacturing method that changes the amount of heat supplied to the evaporation container so that the measured temperature approaches the calculated temperature,
The organic thin film manufacturing method which makes the change rate of the calorie | heat amount supplied to the said evaporation container the value according to the value of the temperature deviation between the said calculated temperature and the measured temperature which is the measured temperature of the said evaporation container. - 予め基準温度と変更温度を設定しておき、
前記速度偏差に比例係数を乗算した結果を前記基準温度に加えた温度である比例温度を算出し、
前記比例温度の値が前記変更温度の値よりも前記基準温度に近いときには、前記変換関係は、前記速度偏差を、前記比例温度よりも前記基準温度に近い温度である前記算出温度に変換する請求項9記載の有機薄膜製造方法。 Set the reference temperature and change temperature in advance,
Calculating a proportional temperature, which is a temperature obtained by multiplying the speed deviation by a proportional coefficient to the reference temperature,
When the value of the proportional temperature is closer to the reference temperature than the value of the changed temperature, the conversion relationship converts the speed deviation to the calculated temperature that is closer to the reference temperature than the proportional temperature. Item 10. The method for producing an organic thin film according to Item 9. - 前記比例温度の値が前記変更温度の値よりも前記基準温度から遠いときには、前記変換関係は、前記速度偏差を、前記比例温度よりも前記基準温度から遠い温度である前記算出温度に変換する請求項10記載の有機薄膜製造方法。 When the value of the proportional temperature is farther from the reference temperature than the value of the changed temperature, the conversion relationship converts the speed deviation to the calculated temperature that is a temperature farther from the reference temperature than the proportional temperature. Item 11. A method for producing an organic thin film according to Item 10.
- 予め基準温度と変更温度を設定しておき、
前記速度偏差に比例係数を乗算した結果を前記基準温度に加えた温度である比例温度を算出し、
前記比例温度の値が前記変更温度の値よりも前記基準温度から遠いときには、前記変換関係は、前記速度偏差を、前記比例温度よりも前記基準温度から遠い温度である前記算出温度に変換する請求項9記載の有機薄膜製造方法。 Set the reference temperature and change temperature in advance,
Calculating a proportional temperature, which is a temperature obtained by multiplying the speed deviation by a proportional coefficient to the reference temperature,
When the value of the proportional temperature is farther from the reference temperature than the value of the changed temperature, the conversion relationship converts the speed deviation to the calculated temperature that is a temperature farther from the reference temperature than the proportional temperature. Item 10. The method for producing an organic thin film according to Item 9. - 前記蒸気を発生させる前記有機材料が配置された前記蒸発容器の温度を測定して前記測定温度とし、
膜厚センサに成長する前記有機薄膜の成長速度から前記測定成長速度を求める請求項9乃至請求項12のいずれか1項記載の有機薄膜製造方法。 Measuring the temperature of the evaporating vessel in which the organic material for generating the vapor is disposed as the measuring temperature;
The organic thin film manufacturing method according to any one of claims 9 to 12, wherein the measured growth rate is obtained from a growth rate of the organic thin film grown on the film thickness sensor. - 前記蒸発容器を加熱して、前記有機材料を加熱する加熱装置に供給する電力の変化速度を変更することで、前記蒸発容器に供給する熱量の変化速度を変更する請求項9乃至請求項12のいずれか1項記載の有機薄膜製造方法。 13. The change rate of the amount of heat supplied to the evaporation vessel is changed by changing the change rate of the electric power supplied to the heating device for heating the organic material by heating the evaporation vessel. The organic thin-film manufacturing method of any one of Claims.
- 前記蒸気が放出される放出孔と前記膜厚センサとの間の場所であって、前記蒸気は前記成膜対象物に到達でき、前記膜厚センサには到達できない遮断場所と、前記遮断場所とは異なる場所であって、前記蒸気は前記成膜対象物と前記膜厚センサには到達できる到達場所との間を移動するシャッタを設け、
前記シャッタを前記遮断場所に位置させて、前記蒸気を前記成膜対象物に到達させ、前記膜厚センサには到達させない遮断期間と、
前記シャッタを前記到達場所に位置させて、前記蒸気を前記成膜対象物と前記膜厚センサとに到達させる到達期間とを、交互に設ける請求項9乃至請求項12のいずれか1項記載の有機薄膜製造方法。 A location between the discharge hole through which the vapor is released and the film thickness sensor, wherein the vapor can reach the film formation target and cannot reach the film thickness sensor; and Are provided in different locations, and the steam is provided with a shutter that moves between the film formation target and the arrival location where the film thickness sensor can reach,
A blocking period in which the shutter is positioned at the blocking location, the vapor reaches the film formation target, and does not reach the film thickness sensor;
13. The arrival period in which the shutter is positioned at the arrival position and the vapor reaches the film formation target and the film thickness sensor alternately is provided. Organic thin film manufacturing method. - 前記遮断期間と、前記遮断期間に隣接する前記到達期間とから成る一周期中に、前記測定温度を一定値にする期間を設ける請求項15記載の有機薄膜製造方法。
The organic thin film manufacturing method according to claim 15, wherein a period in which the measured temperature is set to a constant value is provided in one cycle including the cutoff period and the arrival period adjacent to the cutoff period.
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