WO2017188029A1 - Appareil de traitement par plasma - Google Patents

Appareil de traitement par plasma Download PDF

Info

Publication number
WO2017188029A1
WO2017188029A1 PCT/JP2017/015298 JP2017015298W WO2017188029A1 WO 2017188029 A1 WO2017188029 A1 WO 2017188029A1 JP 2017015298 W JP2017015298 W JP 2017015298W WO 2017188029 A1 WO2017188029 A1 WO 2017188029A1
Authority
WO
WIPO (PCT)
Prior art keywords
high frequency
frequency power
power supply
simulation
wave
Prior art date
Application number
PCT/JP2017/015298
Other languages
English (en)
Japanese (ja)
Inventor
永関　一也
辰郎 大下
幸一 永海
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016132685A external-priority patent/JP6670697B2/ja
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to US16/096,759 priority Critical patent/US20190122863A1/en
Priority to KR1020187030818A priority patent/KR20190002477A/ko
Priority to CN201780026498.0A priority patent/CN109075065A/zh
Priority to KR1020217042169A priority patent/KR20220000909A/ko
Publication of WO2017188029A1 publication Critical patent/WO2017188029A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the embodiment of the present disclosure relates to a plasma processing apparatus.
  • a plasma processing apparatus generally includes a chamber body, a mounting table, and a high-frequency power source.
  • the chamber body provides its internal space as a chamber.
  • the chamber body is grounded.
  • the mounting table is provided in the chamber, and is configured to hold a workpiece mounted thereon.
  • the mounting table includes a lower electrode.
  • the high frequency power source is connected to the lower electrode.
  • plasma of a processing gas is generated in the chamber, and a high frequency for bias from a high frequency power supply is supplied to the lower electrode.
  • ions are accelerated by the potential difference between the potential of the lower electrode based on the high frequency for bias and the potential of the plasma, and the workpiece is irradiated with the accelerated ions.
  • Patent Document 1 proposes a technique using an adjustment mechanism that adjusts the ground capacity of the chamber.
  • the adjustment mechanism described in Patent Document 1 is configured to adjust the area ratio of the anode and the cathode facing the chamber, that is, the A / C ratio.
  • Etching which is a kind of plasma treatment for a workpiece, is required to form a shape with a higher aspect ratio on the workpiece.
  • Lowering the frequency of the high-frequency bias is one way to increase the energy of ions irradiated to the workpiece.
  • the frequency of the high frequency bias is lowered, the plasma potential is increased.
  • the plasma potential increases, the potential difference between the plasma and the chamber body increases, and the energy of ions irradiated to the chamber body increases. From this background, it is necessary to reduce the energy of ions irradiated to the chamber body.
  • a plasma processing apparatus in one aspect, includes a chamber main body, a mounting table, and a high frequency power supply unit.
  • the chamber body provides a chamber.
  • the chamber body is connected to ground potential.
  • the mounting table has a lower electrode and is provided in the chamber.
  • the high frequency power supply unit is electrically connected to the lower electrode.
  • the high frequency power supply unit generates an output wave for bias supplied to the lower electrode.
  • the high frequency power supply unit is configured to generate an output wave in which a high frequency positive voltage component of the fundamental frequency is reduced.
  • the plasma processing apparatus since the output wave with the positive voltage component lowered is supplied to the lower electrode, the plasma potential is lowered. Therefore, the potential difference between the plasma and the chamber body is reduced. As a result, the energy of ions irradiated to the chamber body is lowered. Therefore, the generation of particles from the chamber body is suppressed. Further, by reducing the frequency (fundamental frequency) of the output wave, it is possible to increase the energy of ions irradiated to the workpiece while reducing the energy of ions irradiated to the chamber body.
  • the high frequency power supply unit may include a plurality of high frequency power supplies and a combiner.
  • the plurality of high frequency power supplies are configured to generate a plurality of high frequencies having different frequencies that are n times or 2n times the fundamental frequency, respectively.
  • n is an integer of 1 or more.
  • the synthesizer is configured to synthesize a plurality of high frequencies to generate an output wave. According to this embodiment, it is possible to generate an output wave while suppressing loss of high-frequency power from a plurality of high-frequency power sources.
  • the high frequency power supply unit may include a high frequency power source that generates a high frequency of a fundamental frequency, and a half-wave rectifier configured to remove a high frequency positive voltage component from the high frequency power source. According to this embodiment, the positive voltage component is almost completely removed.
  • the plasma processing apparatus is a capacitively coupled plasma processing apparatus.
  • the plasma processing apparatus of this embodiment further includes an upper electrode and a first high frequency power source.
  • the upper electrode is provided above the lower electrode.
  • the first high frequency power source is connected to the upper electrode and is configured to generate a high frequency for plasma generation.
  • the area of the anode electrode is small and the A / C ratio is small. Therefore, in the plasma processing apparatus of this embodiment, the output wave can be used more advantageously.
  • the fundamental frequency is 1.4 MHz or less.
  • the plasma processing apparatus may further include a second high-frequency power source connected to the lower electrode.
  • the second high-frequency power source is configured to generate a high frequency for bias having a frequency higher than the fundamental frequency. According to the plasma processing apparatus of this embodiment, the above-described output wave or the high frequency for bias from the second high frequency power supply is selectively supplied to the lower electrode according to the process.
  • FIG. 3 is a diagram illustrating an output wave that can be generated by the high frequency power supply unit illustrated in FIG. 2. It is a figure which shows the high frequency power supply part which concerns on another embodiment. It is a figure which illustrates the output wave produced
  • generated by the high frequency power supply part shown in FIG. 6A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 1, and FIG. 6B is an irradiation of the chamber body 12 calculated in the simulation # 1. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 6A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 1
  • FIG. 6B is an irradiation of the chamber body 12 calculated in the simulation # 1. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 6A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 1
  • FIG. 6B
  • FIG. 7A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 2, and FIG. 7B shows the irradiation of the chamber body 12 calculated in the simulation # 2. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 8A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 3, and FIG. 8B is an irradiation on the chamber body 12 calculated in the simulation # 3. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 9A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 4, and FIG.
  • FIG. 9B is an irradiation on the chamber body 12 calculated in the simulation # 4. It is a figure which shows the energy distribution of ion to be performed. It is a figure which shows the incident angle of the ion calculated
  • FIG. 11A shows the energy distribution of ions irradiated on the workpiece calculated in simulation # 7, and FIG. 11B shows the irradiation of the chamber body 12 calculated in simulation # 7. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 12A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in simulation # 8, and FIG. 12B shows irradiation on the chamber body 12 calculated in simulation # 8.
  • FIG. 10 is a table showing the results of simulations # 9 to # 14.
  • 6 is a graph showing Eh / Ef calculated based on the results of simulations # 15 to # 30.
  • FIG. 15A is a diagram showing the energy distribution of ions irradiated to the workpiece calculated in simulation # 31, and FIG. 15B is an irradiation of the chamber body 12 calculated in simulation # 31.
  • FIG. 16A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 32, and FIG. 16B is an irradiation of the chamber body 12 calculated in the simulation # 32.
  • FIG. 21A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 33
  • FIG. 21B is an irradiation of the chamber body 12 calculated in the simulation # 33. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 22A is a diagram showing the energy distribution of ions irradiated on the workpiece calculated in the simulation # 34
  • FIG. 22B is an irradiation on the chamber body 12 calculated in the simulation # 34. It is a figure which shows the energy distribution of ion to be performed.
  • FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an embodiment.
  • FIG. 1 schematically shows the structure of a longitudinal section of a plasma processing apparatus according to an embodiment.
  • a plasma processing apparatus 10 shown in FIG. 1 is a capacitively coupled plasma processing apparatus.
  • the plasma processing apparatus 10 can be used for plasma etching, for example.
  • the plasma processing apparatus 10 includes a chamber body 12.
  • the chamber body 12 has a substantially cylindrical shape.
  • the chamber body 12 provides its internal space as a chamber 12c.
  • the chamber body 12 is made of, for example, aluminum.
  • a film having plasma resistance is formed on the inner wall surface of the chamber body 12, that is, the wall surface defining the chamber 12c. This film may be a ceramic film such as a film formed by anodization or a film formed from yttrium oxide.
  • an opening 12g for conveying the workpiece W is provided on the side wall 12s of the chamber body 12.
  • the opening 12g can be opened and closed by a gate valve 14.
  • the chamber body 12 is connected to the ground potential.
  • the support portion 15 extends upward from the bottom of the chamber body 12.
  • the support portion 15 has a substantially cylindrical shape and is made of an insulating material such as quartz.
  • a mounting table 16 is provided in the chamber 12c.
  • the mounting table 16 is configured to hold the workpiece W on the upper surface thereof.
  • the workpiece W may have a disk shape like a wafer.
  • the mounting table 16 includes a lower electrode 18 and an electrostatic chuck 20. The mounting table 16 is supported by the support unit 15.
  • the lower electrode 18 includes a first plate 18a and a second plate 18b.
  • the first plate 18a and the second plate 18b are made of a metal such as aluminum, for example, and have a substantially disk shape.
  • the second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.
  • An electrostatic chuck 20 is provided on the second plate 18b.
  • the electrostatic chuck 20 has an insulating layer and an electrode built in the insulating layer.
  • a DC power source 22 is electrically connected to the electrode of the electrostatic chuck 20 via a switch 23.
  • the electrostatic chuck 20 When a DC voltage from the DC power supply 22 is applied to the electrode of the electrostatic chuck 20, the electrostatic chuck 20 generates an electrostatic force such as a Coulomb force.
  • the electrostatic chuck 20 attracts the workpiece W by the electrostatic force and holds the workpiece W.
  • a focus ring 24 is disposed on the periphery of the second plate 18b so as to surround the edge of the workpiece W and the electrostatic chuck 20.
  • the focus ring 24 is provided to improve the uniformity of plasma processing.
  • the focus ring 24 is made of a material appropriately selected according to the plasma processing, and can be made of, for example, quartz.
  • a flow path 18f is provided inside the second plate 18b. Refrigerant is supplied to the flow path 18f through a pipe 26a from a chiller unit provided outside the chamber body 12. The refrigerant supplied to the flow path 18f is returned to the chiller unit via the pipe 26b. Thus, the refrigerant is supplied to the flow path 18f so as to circulate in the flow path 18f.
  • the temperature of the refrigerant By controlling the temperature of the refrigerant, the temperature of the workpiece W supported by the electrostatic chuck 20 is controlled.
  • the plasma processing apparatus 10 is provided with a gas supply line 28.
  • the gas supply line 28 supplies the heat transfer gas from the heat transfer gas supply mechanism, for example, He gas, between the upper surface of the electrostatic chuck 20 and the back surface of the workpiece W.
  • the plasma processing apparatus 10 further includes an upper electrode 30.
  • the upper electrode 30 is provided above the mounting table 16 and is provided substantially parallel to the lower electrode 18.
  • the upper electrode 30 closes the upper opening of the chamber body 12 together with the member 32.
  • the member 32 has an insulating property.
  • the upper electrode 30 is supported on the upper portion of the chamber body 12 through the member 32.
  • the upper electrode 30 includes a top plate 34 and a support 36.
  • the top plate 34 faces the chamber 12c.
  • the top plate 34 is provided with a plurality of gas discharge holes 34a.
  • this top plate 34 is not limited, For example, it is comprised from the silicon
  • the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum base material. This film may be a ceramic film such as a film formed by anodization or a film formed from yttrium oxide.
  • the support 36 supports the top plate 34 in a detachable manner, and may be made of a conductive material such as aluminum.
  • a gas diffusion chamber 36 a is provided inside the support 36.
  • a plurality of gas holes 36b extend downward from the gas diffusion chamber 36a, and the plurality of gas holes 36b communicate with the plurality of gas discharge holes 34a, respectively.
  • the support 36 is formed with a gas introduction port 36c that guides the processing gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas introduction port 36c.
  • a gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow rate controller group 44.
  • the gas source group 40 has a plurality of gas sources.
  • the valve group 42 includes a plurality of valves
  • the flow rate controller group 44 includes a plurality of flow rate controllers such as a mass flow controller.
  • the plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via the corresponding valve of the valve group 42 and the corresponding flow rate controller of the flow rate controller group 44, respectively.
  • the plasma processing apparatus 10 can supply gas from one or more gas sources selected from among a plurality of gas sources of the gas source group 40 into the chamber body 12 at individually adjusted flow rates. is there.
  • a baffle plate 48 is provided in the chamber 12 c and between the support portion 15 and the side wall 12 s of the chamber body 12.
  • the baffle plate 48 can be configured by, for example, coating a base material made of aluminum with ceramics such as yttrium oxide.
  • a number of through holes are formed in the baffle plate 48.
  • An exhaust device 50 is connected to the exhaust pipe 52.
  • the exhaust device 50 includes a vacuum pump such as a turbo molecular pump, and can depressurize the chamber 12c.
  • the plasma processing apparatus 10 further includes a high frequency power supply unit 60.
  • the high frequency power supply unit 60 is electrically connected to the lower electrode 18.
  • the high frequency power supply unit 60 generates a bias output wave supplied to the lower electrode 18.
  • the output wave generated by the high frequency power supply unit 60 is an output wave obtained by reducing the high frequency positive voltage component of the fundamental frequency.
  • the fundamental frequency may be 1.4 MHz or less in one embodiment. Details of the high-frequency power supply unit 60 will be described later.
  • the plasma processing apparatus 10 further includes a first high-frequency power source 62.
  • the first high frequency power supply 62 is a power supply that generates a first high frequency for plasma generation, and generates a high frequency having a frequency within a range of 27 to 100 MHz.
  • the first high frequency power supply 62 is connected to the upper electrode 30 via the matching unit 63.
  • the matching unit 63 has a circuit for matching the output impedance of the first high-frequency power source 62 with the input impedance on the load side (upper electrode 30 side in this embodiment).
  • the first high frequency power supply 62 may be connected to the lower electrode 18 via the matching unit 63. When the first high frequency power source 62 is connected to the lower electrode 18, the upper electrode 30 is connected to the ground potential.
  • the plasma processing apparatus 10 may further include a second high frequency power supply 64.
  • the second high frequency power supply 64 is a power supply that generates a second high frequency for bias for drawing ions into the workpiece W.
  • the frequency of the second high frequency is lower than the frequency of the first high frequency and higher than the fundamental frequency of the output wave generated by the high frequency power supply unit 60.
  • the second high frequency may be a frequency in the range of 3.2 kHz to 13.56 MHz.
  • the second high frequency power supply 64 is connected to the lower electrode 18 via the matching unit 65.
  • the matching unit 65 has a circuit for matching the output impedance of the second high-frequency power supply 64 with the input impedance on the load side (lower electrode 18 side).
  • an output wave from the high-frequency power supply unit 60 or a bias high frequency from the second high-frequency power supply 64 is applied to the lower electrode 18 depending on the process. It becomes possible to selectively supply to.
  • the plasma processing apparatus 10 may further include a control unit Cnt.
  • the control unit Cnt is a computer including a processor, a storage device, an input device, a display device, and the like, and controls each unit of the plasma processing apparatus 10. Specifically, the control unit Cnt executes a control program stored in the storage device, and controls each unit of the plasma processing apparatus 10 based on recipe data stored in the storage device. Thereby, the plasma processing apparatus 10 performs the process designated by the recipe data.
  • gas from a gas source selected from the plurality of gas sources in the gas source group 40 is supplied to the chamber 12c. Further, the exhaust device 50 depressurizes the chamber 12c. Then, the gas supplied to the chamber 12 c is excited by a high frequency electric field generated by a high frequency from the first high frequency power supply 62. Thereby, plasma is generated in the chamber 12c. Further, the bias output wave or the second high frequency is selectively supplied to the lower electrode 18. Thereby, the ions in the plasma are accelerated toward the workpiece W. The workpiece W is processed by the ions and / or radicals thus accelerated.
  • FIG. 2 is a diagram illustrating a high-frequency power supply unit according to an embodiment.
  • the high frequency power supply unit 60 ⁇ / b> A illustrated in FIG. 2 can be employed as the high frequency power supply unit 60 of the plasma processing apparatus 10.
  • the high frequency power supply unit 60 ⁇ / b> A includes a plurality of high frequency power supplies 70, a plurality of matching units 72, and a combiner 74.
  • the plurality of high frequency power supplies 70 respectively generate a plurality of high frequencies having different frequencies that are n times or 2n times the fundamental frequency.
  • n is an integer of 1 or more.
  • the plurality of high-frequency power sources 70 includes at least a high-frequency power source that generates a high frequency of the fundamental frequency and a high-frequency power source that generates a high frequency having twice the fundamental frequency. Note that the number of the plurality of high-frequency power supplies 70 may be an arbitrary number of two or more.
  • the plurality of high frequency power supplies 70 are connected to the synthesizer 74 via the plurality of matching units 72.
  • Each of the plurality of matching units 72 has a circuit for matching the output impedance of the corresponding high-frequency power source among the plurality of high-frequency power sources 70 and the impedance on the load side.
  • the combiner 74 combines (that is, adds) a plurality of high frequencies transmitted from the plurality of high frequency power sources 70 via the plurality of matching units 72.
  • the synthesizer 74 supplies an output wave (synthetic wave) generated by synthesizing a plurality of high frequencies to the lower electrode 18.
  • the high frequency power supply unit 60A may further include a plurality of phase detectors 76 and a power supply control unit 78.
  • the plurality of phase detectors 76 are provided between the plurality of matching units 72 and the combiner 74. Each of the plurality of phase detectors 76 is configured to detect a phase of a high frequency transmitted from a corresponding high frequency power source through a corresponding matching unit 72 among the plurality of high frequency power sources 70.
  • the power supply control unit 78 controls the plurality of high frequency power supplies 70 so as to output a high frequency with a preset phase.
  • the power supply controller 78 also sets the high-frequency phases output from the plurality of high-frequency power supplies 70 to preset phases based on the phases detected by the plurality of phase detectors 76. To control.
  • This high frequency power supply unit 60A generates a pseudo half wave rectified wave as the output wave described above. That is, the high frequency power supply unit 60A generates an output wave (synthetic wave) in which a high frequency positive voltage component of the fundamental frequency is reduced by combining a plurality of high frequencies. Thereby, the high frequency power supply unit 60A generates an output wave (synthetic wave) having a waveform similar to the half-wave rectified waveform.
  • the high frequency power supply unit 60 ⁇ / b> A can generate an output wave (synthetic wave) while suppressing loss of high frequency power from the plurality of high frequency power supplies 70.
  • FIG. 3 is a diagram illustrating output waves that can be generated by the high-frequency power supply unit shown in FIG.
  • FIG. 3 shows the voltage of the output wave (synthetic wave) generated by synthesizing the high frequency RF1 having the fundamental frequency and the high frequency RF2 having a frequency twice the fundamental frequency.
  • the high frequency RF1 and the high frequency RF2 are both sine waves, the peak value (peak-to-peak voltage) of the high frequency RF2 is A times the peak value Vpp of the high frequency RF1, and the phase difference between the high frequency RF1 and the high frequency RF2 is 270 °.
  • the horizontal axis indicates time, and the vertical axis indicates the voltage of the output wave.
  • the voltage above 0V is a positive voltage
  • the voltage below 0V is a negative voltage
  • the fundamental wave indicates the high frequency RF1, that is, the high frequency of the fundamental frequency.
  • two high-frequency power sources that is, a high-frequency power source that generates a high-frequency RF1 having a fundamental frequency and a frequency that is twice the fundamental frequency are included.
  • a high-frequency power source that generates the high-frequency RF2 it is possible to generate an output wave (synthetic wave) that imitates the half-wave rectified waveform relatively well.
  • FIG. 4 is a diagram showing a high-frequency power supply unit according to another embodiment. 4 may be employed as the high frequency power supply unit 60 of the plasma processing apparatus 10.
  • the high frequency power supply unit 60B includes a high frequency power supply 80, a matching unit 82, and a half-wave rectifier 84.
  • the high frequency power supply 80 generates a high frequency of the fundamental frequency.
  • a matching unit 82 is connected to the high-frequency power source 80.
  • the matching unit 82 has a circuit for matching the output impedance of the high-frequency power supply 80 with the impedance on the load side.
  • a half-wave rectifier 84 is connected between the node between the matching unit 82 and the lower electrode 18 and the ground.
  • the half-wave rectifier 84 is composed of a diode, for example.
  • the anode of the diode is connected to a node between the matching unit 82 and the lower electrode 18, and the cathode of the diode is connected to the ground.
  • a dummy load 86 may be provided between the cathode of the diode and the ground.
  • the dummy load 86 may be an element that converts high frequency into heat.
  • FIG. 5 is a diagram illustrating an output wave generated by the high frequency power supply unit.
  • the horizontal axis indicates time, and the vertical axis indicates the voltage of the output wave.
  • the voltage above 0V is a positive voltage
  • the voltage below 0V is a negative voltage.
  • the fundamental wave is a high frequency output from the high frequency power supply 80.
  • the high frequency power supply unit 60B when the high frequency voltage generated by the high frequency power supply 80 is a positive voltage, the high frequency is guided to the ground by the rectifying action of the half-wave rectifier 84.
  • the high frequency voltage generated by the high frequency power supply 80 is a negative voltage, the high frequency is supplied to the lower electrode 18. Therefore, according to the high-frequency power supply unit 60B, it is possible to generate an output wave having the half-wave rectified waveform shown in FIG. 5, that is, an output wave (half-wave) from which the positive voltage component is substantially completely removed. .
  • the output wave with the positive voltage component lowered is supplied to the lower electrode 18, the potential of the plasma generated in the chamber 12c is lowered. Therefore, the potential difference between the plasma and the chamber body 12 is reduced. As a result, the energy of ions irradiated onto the chamber body 12 is lowered. Therefore, generation of particles from the chamber body 12 is suppressed.
  • the frequency (fundamental frequency) of the output wave of the high frequency power supply unit 60 it is possible to increase the energy of ions irradiated to the workpiece while reducing the energy of ions irradiated to the chamber body. It is.
  • simulation # 1 and simulation # 2 will be described.
  • the energy distribution (IED: Ion Energy Distribution) of ions irradiated onto the workpiece W and the energy distribution (IED) of ions irradiated onto the chamber body 12 were obtained.
  • the calculation was performed with the setting in which the output wave LF1 (half wave) having a fundamental frequency of 400 kHz is supplied from the high frequency power supply unit 60 to the lower electrode.
  • the calculation was performed with a setting in which a high frequency LF2 (sine wave) having a frequency of 400 kHz was supplied to the lower electrode.
  • the maximum energy of ions irradiated on the workpiece W in both simulations is equal between Vpp of the output wave LF1 (half wave) in simulation # 1 and Vpp of high frequency LF2 (sine wave) in simulation # 2.
  • Vpp of the output wave LF1 (half wave) in simulation # 1 was set as follows.
  • the other settings of simulation # 1 and simulation # 2 were common settings shown below.
  • the A / C ratio is a value obtained by dividing the area of the anode in contact with the chamber by the area of the cathode in contact with the chamber.
  • FIG. 6A shows the energy distribution of ions irradiated on the workpiece W calculated in the simulation # 1
  • FIG. 6B shows the ions irradiated on the chamber body 12 calculated in the simulation # 1.
  • the energy distribution of is shown.
  • FIG. 7A shows the energy distribution of ions irradiated on the workpiece W calculated in the simulation # 2
  • FIG. 7B shows the ions irradiated on the chamber main body 12 calculated in the simulation # 2.
  • the energy distribution of is shown.
  • the maximum value of the energy of ions irradiated to the chamber body 12 in the simulation # 1 is the ion irradiated to the chamber body 12 in the simulation # 2. It was considerably lower than the maximum value of energy. Accordingly, by supplying the output wave LF1 (half wave) from the high frequency power supply unit 60 to the lower electrode 18 as a biasing high frequency, a high frequency that is a sine wave having the same frequency as the fundamental frequency of the output wave LF1 (half wave). It was confirmed that the energy of ions irradiated to the chamber body 12 can be greatly reduced as compared with the case where LF2 is supplied to the lower electrode 18.
  • simulation # 3 and simulation # 4 will be described.
  • the frequency distribution of plasma generated by the first high-frequency power source 62 is changed to 50 MHz from the setting of simulation # 1, and the energy distribution (IED) of ions irradiated on the workpiece W, and The energy distribution (IED) of ions irradiated on the chamber body 12 was determined.
  • the energy distribution (IED) of ions irradiated to the workpiece W is changed by changing the high frequency frequency for plasma generation of the first high frequency power supply 62 from the setting of simulation # 2 to 50 MHz.
  • the energy distribution (IED) of the ion irradiated to the chamber main body 12 was calculated
  • FIG. 8A shows the energy distribution of ions irradiated on the workpiece W calculated in the simulation # 3, and FIG. 8B shows the ions irradiated on the chamber body 12 calculated in the simulation # 3.
  • the energy distribution of is shown.
  • FIG. 9A shows the energy distribution of the ions irradiated on the workpiece W calculated in the simulation # 4, and FIG. 9B shows the ions irradiated on the chamber main body 12 calculated in the simulation # 4.
  • the energy distribution of is shown.
  • the maximum value of the energy of ions irradiated to the workpiece W in the simulation # 3 is irradiated to the workpiece W in the simulation # 4. It was equivalent to the maximum value of ion energy.
  • the maximum value of the energy of ions irradiated to the chamber main body 12 in the simulation # 3 is the ion irradiated to the chamber main body 12 in the simulation # 4. It was considerably lower than the maximum value of energy.
  • the effect of the high-frequency power source 60 that is, the reduction of the energy of ions irradiated to the workpiece W is suppressed, and the energy of ions irradiated to the chamber body 12 is suppressed. It has been confirmed that the effect of lowering is substantially independent of the high-frequency frequency for plasma generation of the first high-frequency power source 62.
  • simulation # 5 the incident angle of ions incident on the workpiece W was determined with the same settings as in simulation # 1.
  • simulation # 6 the incident angle of ions incident on the workpiece W was determined with the same settings as in simulation # 2.
  • FIG. 10 shows the incident angles of ions obtained in simulation # 5 and simulation # 6.
  • the horizontal axis indicates the period of the output wave LF1 (half wave) and the frequency of the high frequency LF2 (sine wave) of the high frequency power supply unit 60
  • the vertical axis indicates the incident angle of ions.
  • the incident angle of ions incident perpendicularly to the workpiece W is 0 °.
  • the same frequency as the fundamental frequency of the output wave LF1 (half wave) is obtained. It was confirmed that the incident angle of ions with respect to the workpiece W can be made closer to the vertical compared with the case where the high frequency LF2 which is a sine wave is supplied to the lower electrode 18.
  • simulation # 7 and simulation # 8 will be described.
  • the molecular weight of the gas supplied to the chamber 12c is changed to 160 from the setting of the simulation # 1, and the energy distribution (IED) of ions irradiated to the workpiece W and the chamber main body 12 are irradiated.
  • the ion energy distribution (IED) was determined.
  • the molecular weight of the gas supplied to the chamber 12c is changed to 160 from the setting of the simulation # 2, and the energy distribution (IED) of ions irradiated to the workpiece W and the chamber body 12 are irradiated.
  • the ion energy distribution (IED) was determined.
  • FIG. 11A shows the energy distribution of the ions irradiated on the workpiece W calculated in the simulation # 7
  • FIG. 11B shows the ions irradiated on the chamber body 12 calculated in the simulation # 7.
  • the energy distribution of is shown.
  • 12 (a) shows the energy distribution of the ions irradiated to the workpiece W calculated in the simulation # 8
  • FIG. 12 (b) shows the ions irradiated to the chamber body 12 calculated in the simulation # 8.
  • the energy distribution of is shown.
  • the maximum value of the energy of ions irradiated to the workpiece W in the simulation # 7 is irradiated to the workpiece W in the simulation # 8. It was almost the same as the maximum value of ion energy.
  • 11B and FIG. 12B are compared, the maximum value of the energy of ions irradiated to the chamber body 12 in simulation # 7 is the ion irradiated to the chamber body 12 in simulation # 8. It was considerably lower than the maximum value of energy.
  • the effect of the high-frequency power source 60 that is, the reduction of the energy of ions irradiated to the workpiece W is suppressed, and the chamber body 12 It has been confirmed that the effect of lowering the energy of ions irradiated on the substrate is substantially independent of the molecular weight of the gas.
  • simulations # 9 to # 14 will be described.
  • the energy distribution (IED) of ions irradiated to the workpiece W is changed by changing the A / C ratio to 3.5, 7, 10 from the setting of simulation # 1, and Then, the energy distribution (IED) of ions irradiated onto the chamber body 12 was determined.
  • the energy distribution (IED) of ions irradiated to the workpiece W is changed by changing the A / C ratio to 3.5, 7, and 10 from the setting of simulation # 2, and The energy distribution (IED) of ions irradiated on the chamber body 12 was determined.
  • E1 / E2 obtained in simulations # 9 to # 11 is considerably larger than E1 / E2 obtained in simulations # 12 to # 14. That is, in simulations # 9 to # 11 using the output wave LF1 (half wave) from the high frequency power supply unit 60 as the bias high frequency supplied to the lower electrode 18, the same as the fundamental frequency of the output wave LF1 (half wave). E1 / E2 was considerably larger than when high frequency LF2 which is a sine wave of frequency was supplied to lower electrode 18 (simulations # 12 to # 14).
  • the effect of the high-frequency power source 60 that is, the effect of suppressing the reduction of the energy of ions irradiated to the workpiece W and the energy of the ions irradiated to the chamber body 12 is A / C. It was confirmed that even if the ratio was considerably small, it was exhibited. For this reason, the effect of the high frequency power supply unit 60 is also exhibited in a plasma processing apparatus in which it is difficult to increase the A / C ratio, for example, in a plasma processing apparatus in which a high frequency for plasma generation is supplied to the upper electrode 30. It was confirmed.
  • simulation # 15 to simulation # 30 will be described.
  • the fundamental frequency of the output wave LF1 (half wave) of the high frequency power supply unit 60 is changed to 0.4 MHz, 0.8 MHz, 1.6 MHz, and 3.2 MHz from the setting of simulation # 1, respectively.
  • the maximum value Eh of the energy of ions irradiated on the chamber body 12 was obtained.
  • the molecular weight of the gas is changed to 160 from the setting of the simulation # 1, and the fundamental frequency of the output wave LF1 (half wave) of the high frequency power supply unit 60 is 0.4 MHz, 0.8 MHz, and 1.6 MHz.
  • the maximum value Eh of the energy of ions irradiated on the chamber body 12 was determined by changing the frequency to 3.2 MHz.
  • the frequency of the high frequency LF2 (sine wave) is changed to 0.4 MHz, 0.8 MHz, 1.6 MHz, and 3.2 MHz from the setting of simulation # 2, and the chamber body 12 is irradiated.
  • the maximum value Ef of the energy of ions to be obtained was determined.
  • the molecular weight of the gas is changed to 160 from the setting of simulation # 2
  • the frequency of the high frequency LF2 (sine wave) is set to 0.4 MHz, 0.8 MHz, 1.6 MHz, and 3.2 MHz, respectively.
  • Fig. 14 shows the results.
  • the horizontal axis represents the fundamental frequency of the output wave LF1 (half wave) and the frequency of the high frequency LF2 (sine wave), and the vertical axis represents Eh / Ef. If Eh / Ef is smaller than 1, the effect of the high frequency power supply unit 60 is exhibited. That is, if Eh / Ef is smaller than 1, the output wave LF1 (half wave) from the high frequency power supply unit 60 is supplied to the lower electrode 18 as a high frequency for biasing, so that a sine having the same frequency as the fundamental frequency of the output wave is obtained.
  • the energy of ions irradiated to the chamber body 12 is lowered.
  • the effect of the high frequency power supply unit 60 is advantageously exhibited when the fundamental frequency of the bias output wave is 1.4 MHz or less.
  • simulation # 31 and simulation # 32 performed for evaluation of the plasma processing apparatus of the embodiment will be described.
  • the high frequency power supply unit 60 and the first high frequency power supply 62 are connected to the lower electrode 18, and the calculation related to the plasma processing apparatus having the high frequency power supply unit 60A as the high frequency power supply unit 60 was performed.
  • the output wave from the high frequency power supply unit 60 has a high frequency RF1 having a fundamental frequency (400 kHz) and a peak value of the high frequency RF1 having a frequency (800 kHz) twice the fundamental frequency.
  • An output wave (synthetic wave) generated by synthesizing with the high-frequency RF 2 having a peak value A times that of A is used.
  • the phase of the high frequency RF1 and the high frequency RF2 was 270 °.
  • the peak value of high frequency RF2 was 0.23 times the peak value of high frequency RF1
  • the peak value of high frequency RF2 was 0.4 times the peak value of high frequency RF1.
  • the energy distribution (IED) of ions irradiated to the workpiece W and the energy distribution (IED) of ions irradiated to the chamber body 12 were obtained.
  • the other settings for simulation # 31 and simulation # 32 were the common settings shown below.
  • FIG. 15A shows the energy distribution of the ions irradiated on the workpiece W calculated in the simulation # 31, and FIG. 15B shows the ions irradiated on the chamber main body 12 calculated in the simulation # 31. The energy distribution of is shown.
  • FIG. 16A shows the energy distribution of ions irradiated on the workpiece W calculated in the simulation # 32, and FIG. 16B shows the ions irradiated on the chamber body 12 calculated in the simulation # 32. The energy distribution of is shown.
  • the maximum value of the energy of ions irradiated on the workpiece W in simulation # 31 and in simulation # 32 The maximum value of the energy of ions irradiated onto the workpiece W was equal to the maximum value of the energy of ions irradiated onto the workpiece W in simulation # 2. Further, comparing (b) of FIG. 7, (b) of FIG. 15, and (b) of FIG. 16, the maximum value of the energy of ions irradiated to the chamber body 12 in simulation # 31 and the simulation # 32 The maximum value of the energy of ions irradiated to the chamber body 12 was considerably lower than the maximum value of the energy of ions irradiated to the chamber body 12 in simulation # 2.
  • the effect of the high frequency power supply unit 60 that is, the reduction of the energy of ions irradiated to the workpiece W is suppressed, and the ions irradiated to the chamber body 12 are also suppressed. It has been confirmed that the effect of lowering the energy is exhibited.
  • the first output wave is an output wave in which a high-frequency positive voltage component having a fundamental frequency is reduced.
  • the second output wave is an output wave in which a high-frequency negative voltage component of the fundamental frequency is reduced.
  • FIG. 17 is a diagram showing a high-frequency power supply unit according to still another embodiment.
  • a high frequency power supply unit 60 ⁇ / b> C illustrated in FIG. 17 can be employed as the high frequency power supply unit 60 of the plasma processing apparatus 10.
  • the high frequency power supply unit 60C is different from the high frequency power supply unit 60A in that a power supply control unit 78C is provided instead of the power supply control unit 78.
  • the high frequency power supply unit 60C is configured to selectively output the first output wave or the second output wave.
  • the first output wave is the same output wave as the above-described output wave generated by the high frequency power supply unit 60A, that is, an output wave (synthetic wave) generated by combining a plurality of high frequencies output from the plurality of high frequency power supplies 70. This is an output wave in which the positive voltage component of the high frequency of the fundamental frequency is reduced.
  • the second output wave is an output wave (combined wave) generated by combining a plurality of high frequencies output from a plurality of high frequency power supplies 70, and is an output wave in which the negative voltage component of the high frequency of the fundamental frequency is reduced. is there.
  • the power control unit 78C is controlled by the control unit Cnt.
  • the power controller 78C is preset for the first output wave to generate the first output wave.
  • a plurality of high frequency power supplies 70 are controlled so as to output a high frequency in phase. Further, the power supply control unit 78C sets the phase of the high frequency output from the plurality of high frequency power supplies 70 to a phase preset for the first output wave based on the phases detected by the plurality of phase detectors 76. The plurality of high frequency power supplies 70 are controlled.
  • the phase difference between the high frequency RF1 and the high frequency RF2 is 270 °.
  • the peak value of the high frequency RF2 is set to a peak value that is A times the peak value of the high frequency RF1. “A” is set to 0.23 or more and 0.4 or less.
  • the power supply control unit 78C when the power supply control unit 78C is controlled to generate the second output wave from the control unit Cnt, the power supply control unit 78C is preset for the second output wave in order to generate the second output wave.
  • the plurality of high-frequency power sources 70 are controlled so that a high frequency is output with the phase thus set. Further, the power supply controller 78C sets the phase of the high frequency output from the plurality of high frequency power supplies 70 to a phase preset for the second output wave based on the phases detected by the plurality of phase detectors 76.
  • the plurality of high frequency power supplies 70 are controlled.
  • FIG. 18 is a diagram illustrating output waves that can be generated by the high-frequency power supply unit shown in FIG. FIG. 18 shows the voltage of the second output wave (synthetic wave) generated by synthesizing the high frequency RF1 having the fundamental frequency and the high frequency RF2 having a frequency twice the fundamental frequency.
  • the high frequency RF1 and the high frequency RF2 are both sine waves, the peak value (peak-to-peak voltage) of the high frequency RF2 is A times the peak value Vpp of the high frequency RF1, and the phase difference between the high frequency RF1 and the high frequency RF2 is 90 °.
  • the horizontal axis indicates time, and the vertical axis indicates the voltage of the second output wave.
  • FIG. 18 shows the voltage of the second output wave.
  • the voltage above 0V is a positive voltage
  • the voltage below 0V is a negative voltage
  • the fundamental wave indicates the high frequency RF1, that is, the high frequency of the fundamental frequency.
  • the high frequency power supply unit 60C has two high frequency power supplies, that is, a high frequency power supply that generates a high frequency RF1 having a basic frequency and a basic frequency.
  • a high-frequency power source that generates a high-frequency RF2 having a double frequency, it is possible to generate a second output wave (synthetic wave) that imitates the half-wave rectified waveform from which the negative voltage component is removed relatively well. Is possible.
  • FIG. 19 is a diagram showing a high-frequency power supply unit according to still another embodiment.
  • a high frequency power supply unit 60 ⁇ / b> D illustrated in FIG. 19 may be employed as the high frequency power supply unit 60 of the plasma processing apparatus 10.
  • the high frequency power supply unit 60D is different from the high frequency power supply unit 60B in that it further includes a half-wave rectifier 85, a switch 88, and a switch 89.
  • the high frequency power supply unit 60D is configured to selectively output the first output wave or the second output wave.
  • the first output wave is the same output wave as the above-described output wave generated by the high frequency power supply unit 60B, that is, an output wave (half wave) from which the high frequency positive voltage component output from the high frequency power supply 80 is substantially removed. It is.
  • the second output wave is an output wave (half wave) from which a high-frequency negative voltage component output from the high-frequency power supply 80 is substantially removed.
  • a switch 88 is provided between the node N1 between the matching unit 82 and the lower electrode 18 and the half-wave rectifier 84.
  • the switch 88 is composed of, for example, a field effect transistor (FET).
  • FET field effect transistor
  • a half-wave rectifier 85 is connected between another node N2 between the matching unit 82 and the lower electrode 18 and the ground.
  • the half-wave rectifier 85 is composed of a diode, for example.
  • the anode of the diode is connected to the ground, and the cathode of the diode is connected to the node N2 via the switch 89.
  • the switch 89 is composed of, for example, a field effect transistor (FET).
  • a dummy load 87 may be provided between the anode of the diode of the half-wave rectifier 85 and the ground.
  • the dummy load 87 may be an element that converts high frequency into heat.
  • the switch 88 and the switch 89 are controlled by the control unit Cnt. Specifically, when the first output wave is to be output to the high frequency power supply unit 60D, the switch is made so that the node N1 and the half-wave rectifier 84 are made conductive and the connection between the node N2 and the half-wave rectifier 85 is disconnected. 88 and switch 89 are controlled. When the second output wave is output to the high-frequency power supply unit 60D, the switch 88 and the switch are connected so that the connection between the node N1 and the half-wave rectifier 84 is disconnected and the node N2 and the half-wave rectifier 85 are made conductive. 89 is controlled.
  • FIG. 20 is a diagram illustrating a second output wave generated by the high frequency power supply unit shown in FIG.
  • the horizontal axis indicates time, and the vertical axis indicates the voltage of the second output wave.
  • the voltage above 0V is a positive voltage
  • the voltage below 0V is a negative voltage.
  • the fundamental wave is a high frequency output from the high frequency power supply 80.
  • the high frequency power supply unit 60D controlled to generate the second output wave when the high frequency voltage generated by the high frequency power supply 80 is a negative voltage, the high frequency is grounded by the rectifying action of the half-wave rectifier 85. Led.
  • the high frequency power supply 80 when the high frequency voltage generated by the high frequency power supply 80 is a positive voltage, the high frequency is supplied to the lower electrode 18. Therefore, according to the high frequency power supply unit 60D, the second output wave having the half-wave rectified waveform shown in FIG. 20, that is, the output wave (half-wave) from which the negative voltage component is substantially completely removed can be generated. Is possible.
  • simulation # 33 and simulation # 34 performed for evaluation of the plasma processing apparatus of the embodiment will be described.
  • the high frequency power supply unit 60 and the first high frequency power supply 62 are connected to the lower electrode 18, and calculations related to the plasma processing apparatus having the high frequency power supply unit 60D as the high frequency power supply unit 60 were performed.
  • the calculation was performed with the setting in which the second output wave (half wave) having a fundamental frequency of 400 kHz is supplied from the high frequency power supply unit 60 to the lower electrode.
  • simulation # 33 Vpp (wave of the second output wave is applied so that the workpiece W is irradiated with ions having substantially the same energy as the maximum energy of the ions irradiated on the workpiece W in simulation # 2. High value) was set.
  • Vpp of the second output wave is set to Vpp lower than Vpp of the second output wave of simulation # 33.
  • simulation # 33 and simulation # 34 the energy distribution (IED) of ions irradiated on the workpiece W and the energy distribution (IED) of ions irradiated on the chamber body 12 were obtained.
  • the other settings of simulation # 33 and simulation # 34 were common settings shown below.
  • 21 (a) shows the energy distribution of ions irradiated to the workpiece W calculated in simulation # 33
  • FIG. 21 (b) shows the ions irradiated to the chamber body 12 calculated in simulation # 33.
  • the energy distribution of is shown.
  • 22 (a) shows the energy distribution of the ions irradiated on the workpiece W calculated in the simulation # 34
  • FIG. 22 (b) shows the ions irradiated on the chamber body 12 calculated in the simulation # 34.
  • the energy distribution of is shown.
  • the Vpp (peak value) of the second output wave is set as described above. Therefore, as shown in FIGS. 7A and 21A, the workpiece is processed in the simulation # 33.
  • the maximum energy of ions irradiated to W was substantially equal to the maximum energy of ions irradiated to the workpiece W in simulation # 2.
  • FIG. 7B and FIG. 21B are compared, the energy of ions irradiated to the chamber body 12 in the simulation # 33 is the energy of ions irradiated to the chamber body 12 in the simulation # 2. It was considerably larger than.
  • the maximum energy of ions irradiated to the workpiece W in the simulation # 34 is the ion irradiated to the workpiece W in the simulation # 2. It was considerably smaller than the maximum energy.
  • the energy of ions irradiated to the chamber body 12 in the simulation # 34 is the energy of ions irradiated to the chamber body 12 in the simulation # 2. It was considerably larger than. Therefore, by supplying the second output wave from the high-frequency power supply unit 60 to the lower electrode 18 as a high frequency for biasing, the energy of ions irradiated to the workpiece W is reduced and the chamber body 12 is irradiated. It was confirmed that it is possible to increase the energy of generated ions.
  • the second output wave can be used for, for example, waferless dry cleaning, that is, cleaning of the inner wall surface of the chamber body 12 that is performed without placing a dummy wafer on the mounting table 16.
  • the plasma processing apparatus 10 is a capacitively coupled plasma processing apparatus
  • the high frequency power supply unit 60 can also be used in an inductively coupled plasma processing apparatus or a plasma processing apparatus using surface waves such as microwaves. Is possible.
  • the high frequency power supply unit 60C and the high frequency power supply unit 60D are configured to selectively output the first output wave or the second output wave, they are configured to output only the second output wave. May be.
  • the half-wave rectifier 84, the dummy load 86, the switch 88, and the switch 89 are removed from the high-frequency power supply unit 60D, and the half-wave rectifier 85 is a node. Connected directly to N2.
  • DESCRIPTION OF SYMBOLS 10 ... Plasma processing apparatus, 12 ... Chamber main body, 12c ... Chamber, 16 ... Mounting stand, 18 ... Lower electrode, 20 ... Electrostatic chuck, 30 ... Upper electrode, 50 ... Exhaust device, 60 ... High frequency power supply part, 62 ... First 1 high frequency power supply, 64... Second high frequency power supply, 60 A... High frequency power supply unit, 70... High frequency power supply, 72. 80: high frequency power supply, 82: matching unit, 84: half-wave rectifier.

Abstract

La présente invention permet de réduire l'énergie d'ions devant être appliqués à un corps principal de chambre. Selon un mode de réalisation, un appareil de traitement par plasma est pourvu d'un corps principal de chambre, d'une table de placement et d'une unité d'alimentation électrique haute fréquence. Le corps principal de chambre constitue une chambre et est relié à un potentiel de masse. La table de placement possède une électrode inférieure et est disposée dans la chambre. L'unité d'alimentation électrique haute fréquence est connectée électriquement à l'électrode inférieure, émet des ondes de sortie en vue de la polarisation, lesdites ondes de sortie devant être fournies à l'électrode inférieure, et est configurée de façon à émettre lesdites ondes de sortie, les composantes de tension positive de la forme d'onde de tension d'ondes haute fréquence à une fréquence fondamentale étant réduites.
PCT/JP2017/015298 2016-04-28 2017-04-14 Appareil de traitement par plasma WO2017188029A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16/096,759 US20190122863A1 (en) 2016-04-28 2017-04-14 Plasma processing apparatus
KR1020187030818A KR20190002477A (ko) 2016-04-28 2017-04-14 플라즈마 처리 장치
CN201780026498.0A CN109075065A (zh) 2016-04-28 2017-04-14 等离子体处理装置
KR1020217042169A KR20220000909A (ko) 2016-04-28 2017-04-14 플라즈마 처리 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016090810 2016-04-28
JP2016-090810 2016-04-28
JP2016132685A JP6670697B2 (ja) 2016-04-28 2016-07-04 プラズマ処理装置
JP2016-132685 2016-07-04

Publications (1)

Publication Number Publication Date
WO2017188029A1 true WO2017188029A1 (fr) 2017-11-02

Family

ID=60160361

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/015298 WO2017188029A1 (fr) 2016-04-28 2017-04-14 Appareil de traitement par plasma

Country Status (2)

Country Link
KR (1) KR20220000909A (fr)
WO (1) WO2017188029A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022158307A1 (fr) * 2021-01-19 2022-07-28 東京エレクトロン株式会社 Procédé de traitement au plasma et dispositif de traitement au plasma
WO2022158305A1 (fr) * 2021-01-19 2022-07-28 東京エレクトロン株式会社 Procédé de traitement au plasma et dispositif de traitement au plasma

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04148534A (ja) * 1990-10-12 1992-05-21 Sony Corp ドライエッチング方法
JPH10241895A (ja) * 1996-11-04 1998-09-11 Applied Materials Inc プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善
JP2000269198A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP2001267296A (ja) * 2000-03-14 2001-09-28 Hitachi Ltd プラズマ処理装置
JP2005116187A (ja) * 2003-10-02 2005-04-28 Matsushita Electric Ind Co Ltd プラズマ発生方法及び装置並びにオゾン発生方法及び装置
JP2006165390A (ja) * 2004-12-09 2006-06-22 Hitachi High-Technologies Corp 半導体製造装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5781808B2 (ja) 2010-03-31 2015-09-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04148534A (ja) * 1990-10-12 1992-05-21 Sony Corp ドライエッチング方法
JPH10241895A (ja) * 1996-11-04 1998-09-11 Applied Materials Inc プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善
JP2000269198A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP2001267296A (ja) * 2000-03-14 2001-09-28 Hitachi Ltd プラズマ処理装置
JP2005116187A (ja) * 2003-10-02 2005-04-28 Matsushita Electric Ind Co Ltd プラズマ発生方法及び装置並びにオゾン発生方法及び装置
JP2006165390A (ja) * 2004-12-09 2006-06-22 Hitachi High-Technologies Corp 半導体製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022158307A1 (fr) * 2021-01-19 2022-07-28 東京エレクトロン株式会社 Procédé de traitement au plasma et dispositif de traitement au plasma
WO2022158305A1 (fr) * 2021-01-19 2022-07-28 東京エレクトロン株式会社 Procédé de traitement au plasma et dispositif de traitement au plasma

Also Published As

Publication number Publication date
KR20220000909A (ko) 2022-01-04

Similar Documents

Publication Publication Date Title
JP6670697B2 (ja) プラズマ処理装置
CN109411322B (zh) 等离子体处理方法和等离子体处理装置
JP6449674B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP7061922B2 (ja) プラズマ処理方法及びプラズマ処理装置
TWI553729B (zh) Plasma processing method
JP6423706B2 (ja) プラズマ処理装置
KR20210020134A (ko) 기판 처리 방법
WO2013088677A1 (fr) Appareil de traitement par plasma
JP6715129B2 (ja) プラズマ処理装置
KR102302313B1 (ko) 재치대에 피흡착물을 흡착시키는 방법 및 플라즈마 처리 장치
JP7154119B2 (ja) 制御方法及びプラズマ処理装置
US20160086773A1 (en) Plasma processing apparatus
WO2017188029A1 (fr) Appareil de traitement par plasma
TW202306441A (zh) 電漿處理裝置
KR20210097027A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20210045927A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP7433271B2 (ja) 基板処理装置および基板処理装置の制御方法
JP2021068880A (ja) 吸着方法、載置台及びプラズマ処理装置
JP7412620B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP2014075281A (ja) プラズマ処理装置及び温度制御方法
JP2022087334A (ja) プラズマ処理方法及びプラズマ処理装置
JP2021015930A (ja) プラズマ処理方法及びプラズマ処理装置
JP2021158264A (ja) 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法
JP2023013666A (ja) プラズマ処理装置及び処理方法

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 20187030818

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17789314

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17789314

Country of ref document: EP

Kind code of ref document: A1