WO2017177631A1 - 影像传感芯片的封装结构及其制作方法 - Google Patents

影像传感芯片的封装结构及其制作方法 Download PDF

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Publication number
WO2017177631A1
WO2017177631A1 PCT/CN2016/101438 CN2016101438W WO2017177631A1 WO 2017177631 A1 WO2017177631 A1 WO 2017177631A1 CN 2016101438 W CN2016101438 W CN 2016101438W WO 2017177631 A1 WO2017177631 A1 WO 2017177631A1
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Prior art keywords
groove
light
image sensing
sensing chip
size
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PCT/CN2016/101438
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English (en)
French (fr)
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肖智轶
豆菲菲
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华天科技（昆山）电子有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

Definitions

  • the present invention relates to the field of chip packaging technologies, and in particular, to a package structure of an image sensing chip and a manufacturing method thereof.
  • An image sensor or image sensor is a device that converts one-dimensional or two-dimensional optical information into an electrical signal.
  • Image sensors can be further divided into two different types: complementary metal oxide semiconductor image sensors and charge coupled device image sensors.
  • Image sensor chips must be packaged to prevent corrosion, mechanical damage, and dust particles.
  • Conventional image sensor chip packaging methods are usually packaged by wire bonding, etc. However, with the rapid development of integrated circuits, longer leads make the product size less than ideal.
  • Wafer-level packaging is a packaging method that directly performs the downstream process after the completion of the wafer front-end process, and then separates and forms a single device.
  • the wafer-level package has a small package size, low process cost, high reliability, and standard surface mount. With the advantages of matching process technology, it has gradually replaced wire bond packaging as an important packaging method.
  • the wafer level packaging method of the existing image sensing chip is to provide a wafer and a carrier board, wherein the front side of the wafer has a plurality of image sensing chips, and the image sensing chip Having a photosensitive structure and a plurality of pads, the image sensing chip has a scribe line; then the wafer and the carrier are fixedly connected from the front side of the wafer, and then the rear side of the wafer is re-wiring and solder bump fabrication The process forms a backside extraction structure such that the pads are connected to the solder bumps on the back side by metal interconnects; the wafer and the carrier are then separated, and the wafer and the support frame are held together to enable image transfer in the wafer
  • the photosensitive surface of the sensing chip corresponds to the window of the supporting frame, and finally the wafer and the support frame are cut along the cutting path to obtain an image sensing chip module.
  • the above packaging method needs to fix and separate the wafer and the carrier board, and then fix the wafer and the support frame, and the whole packaging process is complicated in process and low in process efficiency. Moreover, since the process of fixing and separating from the carrier is experienced, the surface of the wafer is easily contaminated and damaged, that is, the surface of the image sensing chip is easily contaminated and damaged.
  • a new wafer-level package structure of an image sensor chip is needed to solve the conventional wafer-level packaging method of the image sensor chip, which is complicated in process, low in process efficiency, and the surface of the image sensor chip is stained or damaged.
  • the heat dissipation performance of the wafer level package structure of the image sensing chip in the prior art needs to be further improved.
  • the present invention provides a package structure of an image sensing chip and a manufacturing method thereof.
  • the cover plate is separately fabricated, and a dielectric layer is formed on the transparent substrate, and an anti-reflection layer is covered on the sidewall of the light-passing hole. Preventing the surface of the image sensor chip from being contaminated, and reducing the scattering and diffraction of light to achieve high pixels; and the transparent substrate is embedded in the cover plate, which reduces the package size and enables high pixel and work.
  • the art is simple, cost-effective, and effectively improves the reliability of the package and the yield of the product.
  • the package structure of the image sensor chip comprises an image sensor chip, a cover plate, a transparent substrate, a soft board and a heat sink.
  • the functional surface of the image sensor chip comprises a photosensitive area and a plurality of pads located around the photosensitive area
  • the cover plate includes a first surface and a second surface opposite thereto, the first surface is formed with a first groove, and the second surface is formed with a second groove opposite to the first groove a light-passing hole is formed through the first groove and the second groove, and the size of the light-passing hole is not smaller than a size of the photosensitive region of the image sensing chip, and is not larger than the image transmission.
  • a metal interconnect structure comprising a first conductive structure correspondingly bonded to a pad of the image sensor chip, the electrical properties of the metal interconnect structure being led from the first conductive structure a second conductive structure on the second surface;
  • the image sensing chip is placed on In the second recess, the photosensitive region is opposite to the light-passing hole, and the pad is bonded to the corresponding first conductive structure on the metal interconnect structure;
  • the second conductive structure and the second conductive structure One side of the flexible board is bonded, and the other side of the soft board and the non-functional surface of the image sensing chip are coupled to the heat sink.
  • the metal interconnection structure includes an insulating layer, a metal wiring layer and a solder resist layer which are sequentially laid on the second recess and the second surface, and the solder resist layer on the bottom of the second recess Depositing a plurality of first openings corresponding to the plurality of solder pads exposing a metal line, the first openings forming the first conductive a structure; a plurality of second openings exposing the metal lines are reserved on the solder resist layer on the second surface, and the second conductive structures are formed at the second openings.
  • a sealing ring is formed between the second surface of the cover plate and the soft plate.
  • the size of the first groove is larger than the size of the light-passing hole, the transparent substrate is bonded to the bottom of the first groove, and the transparent substrate and the first groove The opening is flush.
  • the size of the first groove is smaller than the size of the light-passing hole, and the transparent substrate is bonded to the junction of the light-passing hole and the first groove.
  • the sidewall of the light-passing hole is covered with an anti-reflection layer, and the height of the light-passing hole is not less than 200 um.
  • the light transmissive substrate is an IR filter glass, and the IR filter glass is covered with a dielectric layer, and the dielectric layer forms a light transmission hole opposite to the position of the light passing hole.
  • a method for manufacturing a package structure of an image sensing chip comprises the following steps:
  • the functional surface of the image sensing chip comprising a photosensitive region and a plurality of pads located around the photosensitive region;
  • the size of the light passing hole is smaller than the size of the first groove, and the size of the light passing hole is not less than
  • the size of the photosensitive region of the image sensing chip is not greater than the size of the sensing sensor chip
  • the image sensing chip is placed in the second recess, and the photosensitive region is opposite to the light-passing hole, and the bonding pad is bonded to the first conductive structure;
  • a method for manufacturing a package structure of an image sensing chip comprises the following steps:
  • solder resist layer on the metal wiring layer, and leaving a plurality of first openings corresponding to the plurality of solder pads exposing the metal lines on the solder resist layer at the bottom of the second recess; Depositing a plurality of second openings on the solder mask on the second surface that expose the metal lines;
  • the size of the light-passing hole is larger than the size of the first groove, and the size of the light-passing hole is not less than
  • the size of the photosensitive region of the image sensing chip is not greater than the size of the sensing sensor chip
  • the image sensing chip is placed in the second recess, and the photosensitive region is opposite to the light-passing hole, and the bonding pad is bonded to the first conductive structure;
  • the transparent substrate is an IR filter glass
  • the IR filter glass is covered with a dielectric layer, and the dielectric layer forms a light transmission hole facing a portion of the light through hole.
  • the sidewall of the light-passing hole is covered with an anti-reflection layer.
  • a sealing ring is formed between the second surface of the cover plate and the soft plate.
  • the present invention provides a package structure of an image sensing chip and a manufacturing method thereof.
  • the package structure includes a cover plate, an image sensing chip, a transparent substrate, a flexible board, and a heat dissipation plate.
  • the cover plate is separately fabricated, it is bonded to the image sensing chip, the transparent substrate is covered with a dielectric layer, a transparent hole is formed on the dielectric layer, the transparent substrate is buried in the cover plate, and the cover plate is through the light hole side.
  • the wall is formed with an anti-reflection layer for reducing the scattering and diffraction of light.
  • the image sensing chip is bonded to the cover plate and then connected to the soft plate and the heat dissipation plate in sequence.
  • the cover plate is separately formed to prevent the image from being formed.
  • the surface of the sensor chip is contaminated, which can realize high pixel, and at the same time solves the damage caused to the chip during the process of etching on the back of the chip after bonding.
  • the transparent substrate is buried or embedded in the cover plate to further reduce The package volume is again covered; again, the transparent substrate is covered with a dielectric layer, a light-transmissive hole is formed on the dielectric layer, and an anti-reflection layer is formed on the sidewall of the light-passing hole of the cover plate to reduce scattering and diffraction of light; finally, the image Sequentially and soft board, the heat dissipation plate connected to the sense die and the cover plate is bonded, so that the package heat dissipation is greatly increased, for certain gas For products with high tightness requirements, the sealing effect of the package can be achieved by dispensing between the soft board and the package.
  • FIG. 1 is a cross-sectional view of a thinned image sensing chip in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view showing a first groove and a second groove formed on a cover plate according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a light-transmitting substrate covered with a dielectric layer according to an embodiment of the present invention
  • FIG. 4 is a schematic structural view showing a light-transmissive substrate placed in a first recess and an insulating layer disposed on a surface of a cover plate where the second recess is located according to an embodiment of the present invention
  • FIG. 5 is a schematic structural view of laying a metal circuit layer on an insulating layer according to an embodiment of the present invention
  • FIG. 6 is a schematic structural view showing a solder resist layer laid on a metal circuit layer and an opening is reserved in an embodiment of the present invention
  • FIG. 7 is a schematic structural view of forming a light-passing hole and forming a solder ball at an opening according to an embodiment of the present invention
  • FIG. 8 is a schematic structural view showing a cover plate and an image sensing chip bonded together with a cover plate and an image sensing chip together with a soft board and a heat dissipation plate according to an embodiment of the present invention
  • FIG. 9 is a schematic structural view of a cover plate according to another embodiment of the present invention.
  • FIG. 10 is a package junction of an image sensing chip formed in another embodiment of the present invention. Schematic diagram of the structure
  • 1-image sensing chip 101-sensing area, 102-pad, 2-cover 201-first groove, 202-second groove, 203-through hole, 3-transparent substrate, 301- Dielectric layer, 4-soft board, 5-heat board, 6-first conductive structure, 7-second conductive structure, 8-insulation layer, 9-metal circuit layer, 10-solder layer, 11-first opening, 12-Second opening, 13-bonded glue or binder.
  • a package structure of an image sensing chip includes an image sensing chip 1, a cover 2, a transparent substrate 3, a flexible board 4, and a heat sink 5.
  • the functional surface of the image sensing chip includes a photosensitive region 101 and a plurality of pads 102 located around the photosensitive region;
  • the cover plate includes a first surface and a second surface opposite thereto, the first surface is formed with a first groove 201, and the second surface is formed a second groove 202 opposite to the first groove, a light-passing hole 203 is formed through the first groove and the second groove, and the size of the light-passing hole is not less than the image
  • the size of the photosensitive area of the sensing chip is not larger than the size of the image sensing chip; the size of the first groove is larger than the size of the light passing hole, and the transparent substrate is bonded to the first a bottom of the groove, and the transparent substrate and the first concave
  • the opening of the slot is flush; a portion of the bottom of the second recess except the light-
  • the cover plate forms a first groove, a second groove and a light passing hole, the first groove is for placing the transparent substrate, and the second The groove is used for bonding the image sensing chip, and the image sensing chip is led out by the metal interconnection structure formed in the second groove to prevent the surface of the image sensing chip from being contaminated, thereby achieving high pixel Solve the damage caused to the chip during the process of etching on the back of the chip after bonding; again, embed the transparent substrate into the cover to further reduce the package volume; finally, the image sensor chip and the cover key After the combination, it is connected with the soft board and the heat sink in order to increase the heat dissipation problem of the package structure in the later use, so that the heat dissipation of the package is greatly increased.
  • the metal interconnect structure comprises an insulating layer 8, a metal circuit layer 9 and a solder resist layer 10 which are sequentially laid on the second recess and the second surface, and the bottom of the second recess is protected.
  • Depositing a plurality of first openings 11 corresponding to the plurality of solder pads exposing a metal line, the first opening forming the first conductive structure; and the solder resist layer on the second surface Reserved for exposed metal A plurality of second openings 12 of the line, the second openings forming the second conductive structure.
  • a seal ring is formed between the solder resist layer on the second surface of the cover plate and the soft plate.
  • the sealing ring is made of one or more of silicon, dry film, metal or insulating resin, and is sealed by glue or solder.
  • a sealing ring can be formed between the soft board and the cover by dispensing to achieve the purpose of sealing the package.
  • the sidewall of the light-passing aperture is covered with an anti-reflection layer.
  • the anti-reflection layer material may be an anti-reflection film capable of absorbing light, for reducing scattering and diffraction of light.
  • the light-passing aperture has a height of not less than 200 um to meet the requirements of a high-pixel image sensing chip.
  • the light transmissive substrate is an IR filter glass
  • the IR filter glass is covered with a dielectric layer 301, and the dielectric layer forms a light transmission hole opposite to the position of the light passing hole.
  • the IR filter glass may be covered with a layer of medium, and the light-transmissive holes may be formed by photolithography or other processes, and the shape of the light-transmitting holes may be circular or other shapes.
  • the first conductive structure and the second conductive structure are solder balls or metal bumps.
  • the first conductive structure may be formed by ball implantation or electroplating, and the second conductive structure is solder ball, which is printed. , ball placement or electroplating.
  • the shape of the first groove or/and the second groove or/and the light-passing hole is rectangular or trapezoidal or circular, but is not limited thereto, and each groove or light on the cover plate
  • the shape of the holes can also be other geometries that are exceptional in this embodiment.
  • the material of the heat dissipation plate may be an iron plate or other substrate for heat dissipation, and an iron plate is used in this embodiment.
  • Step 1 an image sensor chip 1 is provided.
  • the functional surface of the image sensor chip includes a photosensitive region 101 and a plurality of pads 102 around the photosensitive region; the pad is made of aluminum, aluminum alloy, copper. And one of the copper alloys.
  • the back of the image sensor chip is thinned according to actual needs.
  • a cover plate 2 is provided.
  • the cover plate includes a first surface and a second surface opposite thereto, and the first surface is formed with a first groove 201, and the second surface is formed with a second recess 202 opposite to the first recess; wherein the second recess is used for embedding the image sensing chip to achieve bonding between the metal interconnect structure and the image sensor chip pad.
  • a recess is used to embed the bonded transparent substrate.
  • the size of the first recess is not less than the size of the transparent substrate.
  • the order of forming the first groove and the second groove may be arbitrary, and the method of forming the groove may be: first forming a first groove by photolithography and etching; and then forming a plane on the cover plate and the first groove The opposite second surface forms a second groove.
  • a second groove may be formed to form the first groove; the shape of the groove may be rectangular, trapezoidal, circular or other regular geometric shape;
  • Step 3 a soft board 4 and a heat sink 5 are provided; the heat sink material may be an iron board or other substrate for heat dissipation, and an iron board is used in this embodiment.
  • a transparent substrate 3 is provided that is not smaller than the size of the photosensitive region of the image sensing chip.
  • the transparent substrate is an IR filter glass.
  • the IR filter glass is covered with a dielectric layer 301, and the dielectric layer forms a light-transmitting hole facing a portion of the light-passing hole.
  • the dielectric layer may be formed on the first surface of the transparent substrate or on the second surface, and the shape of the transparent hole may be circular or other shape; the size of the transparent substrate is not larger than the size of the first groove; The shape may be the same as or similar to the shape of the first groove.
  • Step 5 referring to FIG. 4, the light-transmissive substrate is embedded in the first groove of the cover plate, and the insulating layer 8 is laid on the second groove and the second surface of the cover plate;
  • the material of the layer may be silicon oxide, silicon nitride, silicon oxynitride or an insulating resin.
  • the transparent substrate may be bonded to the first groove by bonding glue or the adhesive 13, and the bonding glue or the adhesive may be coated on the transparent substrate or coated in the first groove, and Or both.
  • Step 6 referring to FIG. 5, laying a metal circuit layer 9 on the insulating layer; forming at least one metal circuit in the step of forming a metal circuit layer, and forming a metal circuit by sputtering/chemical tin plating or silver;
  • the second metal line may be one or more of copper, nickel, a target, and gold, and is formed by one of electroplating, electroless plating, vacuum evaporation, and chemical vapor deposition.
  • Step 7 referring to FIG. 6, forming a solder resist layer 10 on the metal wiring layer, and preserving a plurality of the solder pads corresponding to the metal lines on the solder resist layer at the bottom of the second recess a first opening 11; a plurality of second openings 12 exposing the metal lines are reserved on the solder resist layer on the second surface;
  • Step 8 referring to FIG. 7, forming a light-passing hole 203 penetrating the first groove and the second groove, the size of the light-passing hole being smaller than the size of the first groove, and the light passing through
  • the size of the hole is not less than the photosensitive area of the image sensing chip
  • the size is not greater than the size of the influencing sensor chip; the specific method is: forming a light passing hole penetrating the first groove and the second groove by etching or cutting or a combination of the two, the light passing hole is exposed a sensing region of the image sensing chip; and forming a first conductive structure 6 for electrically connecting the pads of the image sensing chip at the first opening; forming an external connection at the second opening
  • the second conductive structure 7 preferably, the first conductive structure and the second conductive structure are conductive pastes, solder balls or metal bumps; in this embodiment, solder balls are formed by means of ball implantation.
  • the image sensing chip is placed in the second recess, and the photosensitive region is opposite to the light passing hole, and the bonding pad is bonded to the first conductive structure.
  • the cover is bonded to the image sensing chip by means of gold and gold bonding. Bonding the second conductive structure to one side of the flexible board, and bonding the other side of the flexible board and the non-functional surface of the image sensing chip to the heat dissipation board.
  • the heat dissipation plate may be a copper substrate or an iron substrate, and the substrate having better thermal conductivity can increase the heat dissipation effect.
  • a package structure of an image sensing chip includes an image sensing chip 1, a cover 2, a transparent substrate 3, a flexible board 4, and a heat sink 5.
  • the functional surface of the image sensing chip includes a photosensitive region 101 and a plurality of pads 102 located around the photosensitive region;
  • the cover plate includes a first surface and a second surface opposite thereto, the first surface is formed with a first groove 201, and the second surface is formed a second groove 202 opposite to the first groove, and a light-passing hole 203 is formed through the first groove and the second groove, and the size of the light-passing hole is not less than
  • the size of the photosensitive region of the image sensing chip is not larger than the size of the image sensing chip;
  • the size of the first groove is smaller than the size of the light passing hole, and the transparent substrate is bonded to the through hole a junction of the light hole and the first groove; a portion of the bottom of the second groove except the light-passing hole is formed with a metal interconnection structure, and
  • the cover plate forms a first groove, a second groove and a light passing hole, the first groove is for placing the transparent substrate, and the second The groove is used for bonding the image sensing chip, and the image sensing chip is led out by the metal interconnection structure formed in the second groove to prevent the surface of the image sensing chip from being contaminated, thereby achieving high pixel Solve the damage caused to the chip during the process of etching on the back of the chip after bonding; again, insert the transparent substrate into the cover to further reduce the package volume; finally, the image sensor chip is bonded to the cover After that, it is connected with the soft board and the heat sink in order to increase the heat dissipation problem of the package structure in the later use, so that the heat dissipation of the package is greatly increased.
  • the metal interconnect structure comprises an insulating layer 8, a metal circuit layer 9 and a solder resist layer 10 which are sequentially laid on the second recess and the second surface, and the bottom of the second recess is protected.
  • There are a number of exposed metal lines on the solder layer a plurality of first openings 11 corresponding to the pads, the first openings forming the first conductive structure; and a plurality of second openings 12 exposing the metal lines are reserved on the solder resist layer on the second surface Forming the second conductive structure at the second opening.
  • a seal ring is formed between the solder resist layer on the second surface of the cover plate and the soft plate.
  • the sealing ring is made of one of silicon oxide, silicon nitride, silicon oxynitride or an insulating resin.
  • a sealing ring can be formed between the soft board and the cover by dispensing to achieve the purpose of sealing the package.
  • the sidewall of the light-passing hole is covered with an anti-reflection layer.
  • the anti-reflection layer may be an anti-reflection film capable of absorbing light, for reducing scattering and diffraction of light.
  • the light-passing aperture has a height of not less than 200 um to meet the requirements of a high-pixel image sensing chip.
  • the light transmissive substrate is an IR filter glass
  • the IR filter glass is covered with a dielectric layer, and the dielectric layer forms a light transmission hole opposite to the position of the light passing hole.
  • the IR filter glass may be covered with a layer of medium, and the light-transmissive holes may be formed by photolithography or other processes, and the shape of the light-transmitting holes may be circular or other shapes.
  • the first conductive structure and the second conductive structure are solder balls or metal bumps.
  • the first conductive structure may be formed by ball implantation or electroplating, and the second conductive structure is solder ball, which is printed. , ball placement or electroplating.
  • the first groove or/and the second groove or/and the light passing through is rectangular or trapezoidal or circular, but is not limited thereto, and the shape of each groove or light-passing hole on the cover plate may be other geometric shapes other than the present embodiment.
  • the material of the heat dissipation plate may be an iron plate or other substrate for heat dissipation, and an iron plate is used in this embodiment.
  • Step 1 provides an image sensing chip 1.
  • the functional surface of the image sensing chip includes a photosensitive region 101 and a plurality of pads (102) around the photosensitive region; the pads are made of aluminum, aluminum alloy, copper, and copper. One of the alloys.
  • the back of the image sensor chip is thinned according to actual needs.
  • a cover plate 2 is provided.
  • the cover plate includes a first surface and a second surface opposite thereto, and the first surface is formed with a first groove 201, and the second surface is formed with a second recess 202 opposite to the first recess; wherein the second recess is used for embedding the image sensing chip to achieve bonding between the metal interconnect structure and the image sensor chip pad.
  • a recess is used to embed the bonded transparent substrate.
  • the size of the first recess is not less than the size of the transparent substrate.
  • the order of forming the first groove and the second groove may be arbitrary, and the method of forming the groove may be: first forming a first groove by photolithography and etching; and then forming a plane on the cover plate and the first groove The opposite second surface forms a second groove.
  • a second groove may be formed to form the first groove; the shape of the groove may be rectangular, trapezoidal, circular or other regular geometric shape;
  • Step 3 a soft board 4 and a heat sink 5 are provided; the heat sink material may be an iron board or other substrate for heat dissipation, and an iron board is used in this embodiment.
  • Step 4 laying an insulating layer 8 on the second recess and the second surface of the cover; the material of the insulating layer may be silicon oxide, silicon nitride, silicon oxynitride or insulating resin.
  • the transparent substrate may be bonded to the first groove by bonding glue or an adhesive, and the bonding glue or the adhesive may be coated on the transparent substrate or coated in the first groove, or Both have it.
  • Step 5 laying a metal circuit layer 9 on the insulating layer; forming at least one metal circuit in the step of forming a metal circuit layer, and forming a metal circuit by sputtering or tinning or silver;
  • the circuit may be one or more of copper, nickel, target, and gold, and is formed by one of electroplating, electroless plating, vacuum evaporation, and chemical vapor deposition.
  • Step 6 forming a solder resist layer 10 on the metal circuit layer, and leaving a plurality of first openings 11 corresponding to the plurality of solder pads exposing the metal lines on the solder resist layer at the bottom of the second recess Depositing a plurality of second openings 12 exposing the metal lines on the solder resist layer on the second surface;
  • Step 7 forming a light passing hole 203 penetrating the first groove and the second groove, the size of the light passing hole is larger than the size of the first groove, and the size of the light passing hole is not
  • the size of the photosensitive region smaller than the image sensing chip is not larger than the size of the sensing sensor chip; the specific method is: forming a first through hole and a second groove through etching or cutting or a combination of the two.
  • a light-passing hole the light-receiving hole is exposed to the sensing region of the image sensor chip; and a first conductive structure 6 for electrically connecting the pad of the image sensor chip is formed at the first opening; Forming a second conductive structure 7 for external connection at the second opening; preferably, the first conductive structure and the second conductive structure are conductive pastes, solder balls or metal bumps; In this embodiment, a solder ball is formed by means of a ball.
  • Step 8 providing a transparent substrate 3 not smaller than the size of the photosensitive region of the image sensor chip, and bonding the transparent substrate to the junction of the light-passing hole and the first groove; preferably,
  • the light-transmissive substrate is an IR filter glass, and the IR filter glass is covered with a dielectric layer, and the dielectric layer forms a light-transmitting hole facing a portion of the light-passing hole.
  • the dielectric layer may be formed on the first surface of the transparent substrate or on the second surface, and the shape of the transparent hole may be circular or other shape; the size of the transparent substrate is not larger than the size of the first groove; The shape may be the same as or similar to the shape of the first groove.
  • the image sensing chip is placed in the second recess, and the photosensitive region is opposite to the light passing hole, and the bonding pad is bonded to the first conductive structure.
  • the cover is bonded to the image sensing chip by means of gold and gold bonding. Bonding the second conductive structure to one side of the flexible board, and bonding the other side of the flexible board and the non-functional surface of the image sensing chip to the heat dissipation board.
  • the heat dissipation plate may be a copper substrate or an iron substrate, and the substrate having better thermal conductivity can increase the heat dissipation effect.
  • the present invention provides a package structure of an image sensor chip and a method for fabricating the same, the package structure including a cover, an image sensor chip, a transparent substrate, a flexible board, and a heat sink, wherein the cover After the board is separately fabricated, it is bonded to the image sensing chip.
  • the transparent substrate is covered with a dielectric layer, and a transparent hole is formed on the dielectric layer.
  • the transparent substrate is buried in the cover plate, and the sidewall of the through hole of the cover plate is formed with an anti-reflection.
  • the cover is separately manufactured to prevent the surface of the image sensor chip from being contaminated, and the high pixel can be realized, and the process of etching on the back of the chip after the previous bonding is solved.
  • the transparent substrate is embedded or embedded in the cover plate to further reduce the package volume; again, the transparent substrate is covered with a dielectric layer, the dielectric layer is formed with a light transmission hole, and the cover plate is provided with a light transmission hole side
  • the wall is formed with an anti-reflection layer, which can reduce the scattering and diffraction of light.
  • the image sensing chip is bonded to the cover plate and then connected to the soft plate and the heat dissipation plate in sequence, so that the heat dissipation of the package is greatly increased, for some gases.
  • the sealing effect of the package can be achieved by dispensing between the soft board and the package.

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Abstract

提供一种影像传感芯片的封装结构及其制作方法，该封装结构包含影像传感芯片（1）、盖板（2）、透光基板（3）、软板（4）、散热板（5），盖板（2）上形成有第一凹槽（201）、第二凹槽（202）和贯通第一、二凹槽的通光孔（203）。透光基板（3）埋入第一凹槽（201）中，透光基板（3）上覆盖有介质层（301），第二凹槽（202）所在盖板（2）表面形成有第一和第二导电结构（6，7），影像传感芯片（1）上的焊垫（102）与盖板（2）上的第一导电结构（6）键合，键合后的封装体通过第二导电结构（7）依次与软板（4）、散热板（5）进行连接。盖板（2）单独制作，并在通光孔（203）侧壁覆盖防反射层，能够防止图像传感芯片表面被污染，同时降低光线的散射与衍射能实现高像素；且透光基板（3）嵌入盖板（2）中，减少了封装尺寸，能够实现高像素，工艺简单，节约成本，有效提高了封装的可靠性和产品的良率。

Description

影像传感芯片的封装结构及其制作方法 技术领域
本发明涉及芯片封装技术领域，具体是涉及一种影像传感芯片的封装结构及其制作方法。
背景技术
影像传感器或图像传感器，是一种将一维或者二维光学信息转换为电信号的装置。图像传感器可以被进一步地分为两种不同的类型：互补金属氧化物半导体图像传感器和电荷耦合器件图像传感器。图像传感器芯片必须加以封装才能防止腐蚀、机械损伤和灰尘颗粒等。传统的图像传感器芯片封装方法通常是采用引线键合等方式进行封装，但随着集成电路的飞速发展，较长的引线使得产品尺寸无法达到理想的要求。
晶圆级封装是在晶圆前道工序完成后，直接进行后道工艺，再切割分离形成单个器件的封装方法，晶圆级封装具有封装尺寸小，工艺成本低、可靠性高以及标准表面贴装工艺技术相匹配等优点，因此，其逐渐取代引线键合封装成为一种重要的封装方法。
现有影像传感芯片的晶圆级封装方法为，提供晶圆和载板，其中，晶圆正面具有多个影像传感芯片，而影像传感芯片 具有感光结构和多个焊盘，影像传感芯片之间具有切割道；然后将从晶圆正面将晶圆与载板固定连接在一起，接着对晶圆背面进行再布线工艺和焊料凸点制作工艺形成背面引出结构，从而使焊盘通过金属互连线连接至背面的焊料凸点；之后将晶圆和载板分离，并将晶圆和支撑框架固定在一起，使晶圆中的影像传感芯片的感光面对应于支撑框架的窗口，最后沿所述切割道对晶圆和支撑架进行切割，得到影像传感芯片模组。
上述封装方式需要将晶圆与载板固定再分离，然后再将晶圆与支撑框架固定，整个封装过程工艺复杂，工艺效率低。并且，由于经历了与载板先固定再分离的过程，因此，晶圆表面容易污染和受损，即影像传感芯片表面容易污染和受损。
为此，需要一种新的影像传感芯片的晶圆级封装结构，以解决现有影像传感芯片的晶圆级封装方法工艺复杂，工艺效率低，并且图像传感芯片表面受玷污或损害的问题，此外，现有技术中影像传感芯片的晶圆级封装结构的散热性能有待进一步改善。
发明内容
为了解决上述技术问题，本发明提出一种影像传感芯片的封装结构及其制作方法，盖板单独制作，并在透光基板上形成介质层、在通光孔侧壁覆盖防反射层，能够防止图像传感芯片表面被污染，同时降低光线的散射与衍射能实现高像素；并且，透光基板嵌入盖板中，减少了封装尺寸，能够实现高像素，工 艺简单，节约成本，有效提高了封装的可靠性和产品的良率。
本发明的技术方案是这样实现的：
一种影像传感芯片的封装结构，包括影像传感芯片、盖板、透光基板、软板和散热板，所述影像传感芯片的功能面包含感光区和位于感光区周围的若干焊垫；所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽，所述第二表面形成有与所述第一凹槽相对的第二凹槽，所述第一凹槽与所述第二凹槽之间贯通形成通光孔，所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸，且不大于所述影像传感芯片的尺寸；所述透光基板键合于所述第一凹槽内或所述通光孔靠近所述第一凹槽处；所述第二凹槽底部除通光孔外的部分上形成有金属互连结构，所述金属互连结构包含与所述影像传感芯片的焊垫对应键合的第一导电结构，该金属互连结构的电性自所述第一导电结构引至第二表面上的第二导电结构；所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述金属互连结构上对应的第一导电结构键合连接；所述第二导电结构与所述软板的一面键合，所述软板的另一面及所述影像传感芯片的非功能面结合于所述散热板。
进一步的，所述金属互连结构包括依次铺设于所述第二凹槽及所述第二表面上的绝缘层、金属线路层和防焊层，所述第二凹槽底部的防焊层上预留有暴露出金属线路的与若干所述焊垫对应的若干第一开口，所述第一开口处形成所述第一导电 结构；所述第二表面上的防焊层上预留有暴露出金属线路的若干第二开口，所述第二开口处形成所述第二导电结构。
进一步的，所述盖板第二表面与所述软板之间形成有密封环。
进一步的，所述第一凹槽的尺寸大于所述通光孔的尺寸，所述透光基板键合于所述第一凹槽的底部，且所述透光基板与所述第一凹槽的开口平齐。
进一步的，所述第一凹槽的尺寸小于所述通光孔的尺寸，所述透光基板键合于所述通光孔与所述第一凹槽的结合处。
进一步的，所述通光孔的侧壁上覆盖有防反射层，且所述通光孔高度不小于200um。
进一步的，所述透光基板为IR滤光玻璃，并且IR滤光玻璃上覆盖有介质层，所述介质层正对所述通光孔位置形成透光孔。
一种影像传感芯片的封装结构的制作方法，包括如下步骤：
a.提供一影像传感芯片，所述影像传感芯片的功能面包含感光区和位于感光区周围的若干焊垫；
b.提供一盖板，所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽，所述第二表面形成有与所述第一凹槽相对的第二凹槽；
c.提供一软板和一散热板；
d.提供一不小于所述感光区尺寸的透光基板，将所述透 光基板嵌入键合于所述盖板的第一凹槽内；
e.在所述盖板的第二凹槽及第二表面上铺设绝缘层；
f.在所述绝缘层上铺设金属线路层；
g.在所述金属线路层上形成防焊层，并在所述第二凹槽底部的防焊层上预留暴露出金属线路的与若干所述焊垫对应的若干第一开口；在所述第二表面上的防焊层上预留暴露出金属线路的若干第二开口；
h.形成贯通所述第一凹槽与所述第二凹槽的通光孔，所述通光孔的尺寸小于所述第一凹槽的尺寸，且所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸不大于所述影响传感芯片的尺寸；
i.在所述第一开口处形成用于电性连接所述影像传感芯片的焊垫的第一导电结构；在所述第二开口处形成用于电性连接所述软板的第二导电结构；
j.将所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述第一导电结构键合连接；
k.将所述第二导电结构键合于所述软板的一面，并将所述软板的另一面及所述影像传感芯片的非功能面键合于所述散热板上。
一种影像传感芯片的封装结构的制作方法，包括如下步骤：
a.提供一影像传感芯片，所述影像传感芯片的功能面包 含感光区和位于感光区周围的若干焊垫；
b.提供一盖板，所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽，所述第二表面形成有与所述第一凹槽相对的第二凹槽；
c.提高一软板和一散热板；
d.在所述盖板的第二凹槽及第二表面上铺设绝缘层；
e.在所述绝缘层上铺设金属线路层；
f.在所述金属线路层上形成防焊层，并在所述第二凹槽底部的防焊层上预留暴露出金属线路的与若干所述焊垫对应的若干第一开口；在所述第二表面上的防焊层上预留暴露出金属线路的若干第二开口；
g.形成贯通所述第一凹槽与所述第二凹槽的通光孔，所述通光孔的尺寸大于所述第一凹槽的尺寸，且所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸不大于所述影响传感芯片的尺寸；
h.提供一不小于所述感光区尺寸的透光基板，所述透光基板键合于所述通光孔与所述第一凹槽的结合处；
i.在所述第一开口处形成用于电性连接所述影像传感芯片的焊垫的第一导电结构；在所述第二开口处形成用于电性连接所述软板的第二导电结构；
j.将所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述第一导电结构键合连接；
k.将所述第二导电结构键合于所述软板的一面，并将所述软板的另一面及所述影像传感芯片的非功能面键合于所述散热板上。
进一步的，所述透光基板为IR滤光玻璃，所述IR滤光玻璃上覆盖有介质层，所述介质层正对所述通光孔的部分形成透光孔。
进一步的，所述通光孔侧壁覆盖有防反射层。
进一步的，所述盖板第二表面与所述软板之间形成有密封环。
本发明的有益效果是：本发明提供一种影像传感芯片的封装结构及其制作方法，该封装结构包括一盖板、一影像传感芯片、一透光基板、一软板、一散热板，其中，盖板单独制作好之后再与影像传感芯片键合，透光基板上覆盖有介质层，介质层上形成透光孔，透光基板埋入盖板中，盖板通光孔侧壁形成有防反射层，用于降低光线的散射与衍射，影像传感芯片与盖板键合后依次和软板、散热板连接，这样做的好处是：首先，盖板单独制作可以防止图像传感芯片表面被污染，能实现高像素，同时解决了之前键合之后在芯片背部进行刻蚀等工艺时对芯片造成的损伤；其次，透光基板埋入或嵌入盖板中，进一步减小了封装体积；再次，透光基板上覆盖有介质层，介质层上形成透光孔，盖板通光孔侧壁形成有防反射层，可降低光线的散射与衍射；最后，影像传感芯片与盖板键合后依次和软板、散热板连接，这样使得封装体的散热性大大增加，对于某些气 密性要求较高的产品，还可以在软板与封装体之间通过点胶的方式，实现封装体的密封效果。
附图说明
图1为本发明一实施例中减薄后影像传感芯片的剖面示意图；
图2为本发明一实施例中盖板上形成有第一凹槽、第二凹槽的剖面示意图；
图3为本发明一实施例中覆盖有介质层的透光基板的结构示意图；
图4为本发明一实施例中在第一凹槽中放置透光基板，并在第二凹槽所在的盖板表面整面铺设绝缘层的结构示意图；
图5为本发明一实施例中在绝缘层上铺设金属线路层的结构示意图；
图6为本发明一实施例中在金属线路层上铺设防焊层，并预留出开口的结构示意图；
图7为本发明一实施例中形成通光孔，并在开口处形成焊球的结构示意图；
图8为本发明一实施例中将盖板与影像传感芯片键合，并将键合后的盖板与影像传感芯片一起与软板和散热板结合的结构示意图；
图9为本发明另一实施例中盖板的结构示意图；
图10本发明另一实施例中形成的影像传感芯片的封装结 构的示意图；
结合附图，作以下说明：
1-影像传感芯片，101-感测区，102-焊垫，2-盖板201-第一凹槽，202-第二凹槽，203-通光孔，3-透光基板，301-介质层，4-软板，5-散热板，6-第一导电结构，7-第二导电结构，8-绝缘层，9-金属线路层，10-防焊层，11-第一开口，12-第二开口，13-键合胶水或粘结剂。
具体实施方式
为了能够更清楚地理解本发明的技术内容，特举以下实施例详细说明，其目的仅在于更好理解本发明的内容而非限制本发明的保护范围。
实施例1
如图8所示，一种影像传感芯片的封装结构，包括影像传感芯片1、盖板2、透光基板3、软板4和散热板5，所述影像传感芯片的功能面包含感光区101和位于感光区周围的若干焊垫102；所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽201，所述第二表面形成有与所述第一凹槽相对的第二凹槽202，所述第一凹槽与所述第二凹槽之间贯通形成通光孔203，所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸，且不大于所述影像传感芯片的尺寸；所述第一凹槽的尺寸大于所述通光孔的尺寸，所述透光基板键合于所述第一凹槽的底部，且所述透光基板与所述第一凹 槽的开口平齐；所述第二凹槽底部除通光孔外的部分上形成有金属互连结构，所述金属互连结构包含与所述影像传感芯片的焊垫对应键合的第一导电结构6，该金属互连结构的电性自第一导电结构引至第二表面上的第二导电结构7；所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述金属互连结构上对应的第一导电结构键合连接；所述第二导电结构与所述软板的一面键合，所述软板的另一面及所述影像传感芯片的非功能面结合于所述散热板。这样，首先，通过单独制作盖板之后再与影像传感芯片键合，盖板形成了第一凹槽、第二凹槽及通光孔，第一凹槽用于放置透光基板，第二凹槽用于键合影像传感芯片，影像传感芯片通过第二凹槽内形成的金属互连结构引出之盖板第二表面，可以防止图像传感芯片表面被污染，实现高像素的同时，解决之前键合之后在芯片背部进行刻蚀等工艺时对芯片造成的损伤；再次，将透光基板埋入盖板中，进一步了减小封装体积；最后，影像传感芯片与盖板键合后依次和软板、散热板连接，用于增加封装结构在后期使用中的散热问题，使得封装体的散热性大大增加。
优选的，所述金属互连结构包括依次铺设于所述第二凹槽及所述第二表面上的绝缘层8、金属线路层9和防焊层10，所述第二凹槽底部的防焊层上预留有暴露出金属线路的与若干所述焊垫对应的若干第一开口11，所述第一开口处形成所述第一导电结构；所述第二表面上的防焊层上预留有暴露出金属 线路的若干第二开口12，所述第二开口处形成所述第二导电结构。
优选的，所述盖板第二表面上的防焊层与所述软板之间形成有密封环。优选的，所述密封环的材质为所述密封环的材质为硅、干膜、金属或者绝缘树脂中的一种或几种，通过胶水或者焊料密封。具体实施时，对于某些特定的对密封性有较高要求的影像传感芯片的封装，可以通过点胶的方式在软板与盖板之间形成密封环，达到使封装体密封的目的。
优选的，所述通光孔的侧壁上覆盖有防反射层，具体实施时，防反射层材料可为能够吸收光线的防反射膜，用于降低光线的散射与衍射等。所述通光孔高度不小于200um，以达到高像素影像传感芯片的要求。
优选的，所述透光基板为IR滤光玻璃，并且IR滤光玻璃上覆盖有介质层301，所述介质层正对所述通光孔位置形成透光孔。具体实施时，可在IR滤光玻璃覆盖一层介质，通过光刻或者其它工艺形成透光孔，透光孔的形状可以是圆形或者其它形状。
优选的，所述第一导电结构、所述第二导电结构为焊球或金属凸点，较佳的，第一导电结构可以通过植球或电镀形成，第二导电结构为焊球，通过印刷、植球或电镀形成。
优选的，所述第一凹槽或/和所述第二凹槽或/和所述通光孔的形状为矩形或梯形或圆形，但不限于此，盖板上各凹槽或通光孔的形状还可以是本实施例外的其它几何形状。
优选的，所述散热板的材质可以是铁板也可以是其它用于散热的基板，本实施例中采用铁板。
以下结合附图1-9对该优选实施例一种影像传感芯片的封装结构的制作方法进行详细说明，具体步骤如下：
步骤1、参见图1，提供一影像传感芯片1，所述影像传感芯片的功能面包含感光区101和位于感光区周围的若干焊垫102；焊垫的材质是铝、铝合金、铜和铜合金中的一种。影像传感芯片背部根据实际需要进行减薄。
步骤2、参见图2，提供一盖板2，所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽201，所述第二表面形成有与所述第一凹槽相对的第二凹槽202；其中，第二凹槽用于嵌入结合影像传感芯片，实现其内的金属互连结构与影像传感芯片焊垫的键合，第一凹槽用于嵌入键合透光基板，本实施例中第一凹槽的尺寸不小于透光基板的尺寸。形成第一凹槽与第二凹槽的顺序可以是任意的，形成凹槽的方法可以是：先利用光刻、刻蚀形成第一凹槽；接着在盖板上与第一凹槽所在平面相对的第二表面形成第二凹槽。也可以先形成第二凹槽，在形成第一凹槽；凹槽的形状可以是矩形、梯形、圆形或者其它规则几何形状；
步骤3，提供一软板4和一散热板5；散热板材质可以是铁板，也可以是其它用于散热的基板，本实施例中采用铁板。
步骤4、参见图3，提供一不小于影像传感芯片的感光区尺寸的透光基板3，优选的，所述透光基板为IR滤光玻璃， 所述IR滤光玻璃上覆盖有介质层301，所述介质层正对所述通光孔的部分形成透光孔。介质层可以形成在透光基板第一表面也可以形成在第二表面，透光孔的形状可以是圆形或者其它形状；透光基板的尺寸不大于第一凹槽的尺寸；透光基板的形状与第一凹槽的形状可以相同或者相似。
步骤5、参见图4，将所述透光基板嵌入键合于所述盖板的第一凹槽内，并在所述盖板的第二凹槽及第二表面上铺设绝缘层8；绝缘层的材质可以是氧化硅、氮化硅、氮氧化硅或者绝缘树脂。透光基板可以通过键合胶水或者粘结剂13与第一凹槽键合在一起，键合胶水或者粘结剂可以涂布在透光基板上也可以涂布在第一凹槽中，又或者两者都有。
步骤6、参见图5，在所述绝缘层上铺设金属线路层9；形成金属线路层的步骤中至少形成一层金属线路，形成金属线路的方式可以先采用溅射/化镀锡或银；第二层金属线路可以是铜、镍、靶、金中的一种或多种，形成的方法为电镀、化学镀、真空蒸镀法、化学气相沉积法中的一种。
步骤7、参见图6，在所述金属线路层上形成防焊层10，并在所述第二凹槽底部的防焊层上预留暴露出金属线路的与若干所述焊垫对应的若干第一开口11；在所述第二表面上的防焊层上预留暴露出金属线路的若干第二开口12；
步骤8、参见图7，形成贯通所述第一凹槽与所述第二凹槽的通光孔203，所述通光孔的尺寸小于所述第一凹槽的尺寸，且所述通光孔的尺寸不小于所述影像传感芯片的感光区的 尺寸不大于所述影响传感芯片的尺寸；具体方法为：通过刻蚀或切割或者两者结合的工艺形成贯通第一凹槽和第二凹槽的通光孔，所述通光孔暴露出影像传感芯片的感测区；并在所述第一开口处形成用于电性连接所述影像传感芯片的焊垫的第一导电结构6；在所述第二开口处形成用于外接的第二导电结构7；优选的，第一导电结构和第二导电结构为导电胶、焊球或者金属凸点；本实施例中利用植球的方式形成焊球。
步骤9、参见图8，将所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述第一导电结构键合连接；优选的，本实施例是采用金金键合的方式将盖板与影像传感芯片键合。将所述第二导电结构键合于所述软板的一面，并将所述软板的另一面及所述影像传感芯片的非功能面键合于所述散热板上。优选的，所述散热板可以是铜基板或者是铁基板等，具有较好导热性的基板，可以增加散热效果。
实施例2
如图10所示，一种影像传感芯片的封装结构，包括影像传感芯片1、盖板2、透光基板3、软板4和散热板5，所述影像传感芯片的功能面包含感光区101和位于感光区周围的若干焊垫102；所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽201，所述第二表面形成有与所述第一凹槽相对的第二凹槽202，所述第一凹槽与所述第二凹槽之间贯通形成通光孔203，所述通光孔的尺寸不小于所述 影像传感芯片的感光区的尺寸，且不大于所述影像传感芯片的尺寸；所述第一凹槽的尺寸小于所述通光孔的尺寸，所述透光基板键合于所述通光孔与所述第一凹槽的结合处；所述第二凹槽底部除通光孔外的部分上形成有金属互连结构，所述金属互连结构包含与所述影像传感芯片的焊垫对应键合的第一导电结构6，该金属互连结构的电性自第一导电结构引至第二表面上的第二导电结构7；所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述金属互连结构上对应的第一导电结构键合连接；所述第二导电结构与所述软板的一面键合，所述软板的另一面及所述影像传感芯片的非功能面结合于所述散热板。这样，首先，通过单独制作盖板之后再与影像传感芯片键合，盖板形成了第一凹槽、第二凹槽及通光孔，第一凹槽用于放置透光基板，第二凹槽用于键合影像传感芯片，影像传感芯片通过第二凹槽内形成的金属互连结构引出之盖板第二表面，可以防止图像传感芯片表面被污染，实现高像素的同时，解决之前键合之后在芯片背部进行刻蚀等工艺时对芯片造成的损伤；再次，将透光基板嵌入盖板中，进一步了减小封装体积；最后，影像传感芯片与盖板键合后依次和软板、散热板连接，用于增加封装结构在后期使用中的散热问题，使得封装体的散热性大大增加。
优选的，所述金属互连结构包括依次铺设于所述第二凹槽及所述第二表面上的绝缘层8、金属线路层9和防焊层10，所述第二凹槽底部的防焊层上预留有暴露出金属线路的与若干 所述焊垫对应的若干第一开口11，所述第一开口处形成所述第一导电结构；所述第二表面上的防焊层上预留有暴露出金属线路的若干第二开口12，所述第二开口处形成所述第二导电结构。
优选的，所述盖板第二表面上的防焊层与所述软板之间形成有密封环。优选的，所述密封环的材质为氧化硅、氮化硅、氮氧化硅或者绝缘树脂中的一种。具体实施时，对于某些特定的对密封性有较高要求的影像传感芯片的封装，可以通过点胶的方式在软板与盖板之间形成密封环，达到使封装体密封的目的。
优选的，所述通光孔的侧壁上覆盖有防反射层，具体实施时，防反射层可为材料能够吸收光线的防反射膜，用于降低光线的散射与衍射等。所述通光孔高度不小于200um，以达到高像素影像传感芯片的要求。
优选的，所述透光基板为IR滤光玻璃，并且IR滤光玻璃上覆盖有介质层，所述介质层正对所述通光孔位置形成透光孔。具体实施时，可在IR滤光玻璃覆盖一层介质，通过光刻或者其它工艺形成透光孔，透光孔的形状可以是圆形或者其它形状。
优选的，所述第一导电结构、所述第二导电结构为焊球或金属凸点，较佳的，第一导电结构可以通过植球或电镀形成，第二导电结构为焊球，通过印刷、植球或电镀形成。
优选的，所述第一凹槽或/和所述第二凹槽或/和所述通光 孔的形状为矩形或梯形或圆形，但不限于此，盖板上各凹槽或通光孔的形状还可以是本实施例外的其它几何形状。
优选的，所述散热板的材质可以是铁板也可以是其它用于散热的基板，本实施例中采用铁板。
以下结合附图9-10对该优选实施例一种影像传感芯片的封装结构的制作方法进行详细说明，具体步骤如下：
步骤1、提供一影像传感芯片1，所述影像传感芯片的功能面包含感光区101和位于感光区周围的若干焊垫(102)；焊垫的材质是铝、铝合金、铜和铜合金中的一种。影像传感芯片背部根据实际需要进行减薄。
步骤2、参见图9，提供一盖板2，所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽201，所述第二表面形成有与所述第一凹槽相对的第二凹槽202；其中，第二凹槽用于嵌入结合影像传感芯片，实现其内的金属互连结构与影像传感芯片焊垫的键合，第一凹槽用于嵌入键合透光基板，本实施例中第一凹槽的尺寸不小于透光基板的尺寸。形成第一凹槽与第二凹槽的顺序可以是任意的，形成凹槽的方法可以是：先利用光刻、刻蚀形成第一凹槽；接着在盖板上与第一凹槽所在平面相对的第二表面形成第二凹槽。也可以先形成第二凹槽，在形成第一凹槽；凹槽的形状可以是矩形、梯形、圆形或者其它规则几何形状；
步骤3，提供一软板4和一散热板5；散热板材质可以是铁板，也可以是其它用于散热的基板，本实施例中采用铁板。
步骤4、在所述盖板的第二凹槽及第二表面上铺设绝缘层8；绝缘层的材质可以是氧化硅、氮化硅、氮氧化硅或者绝缘树脂。透光基板可以通过键合胶水或者粘结剂与第一凹槽键合在一起，键合胶水或者粘结剂可以涂布在透光基板上也可以涂布在第一凹槽中，又或者两者都有。
步骤5、在所述绝缘层上铺设金属线路层9；形成金属线路层的步骤中至少形成一层金属线路，形成金属线路的方式可以先采用溅射/化镀锡或银；第二层金属线路可以是铜、镍、靶、金中的一种或多种，形成的方法为电镀、化学镀、真空蒸镀法、化学气相沉积法中的一种。
步骤6、在所述金属线路层上形成防焊层10，并在所述第二凹槽底部的防焊层上预留暴露出金属线路的与若干所述焊垫对应的若干第一开口11；在所述第二表面上的防焊层上预留暴露出金属线路的若干第二开口12；
步骤7、形成贯通所述第一凹槽与所述第二凹槽的通光孔203，所述通光孔的尺寸大于所述第一凹槽的尺寸，且所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸不大于所述影响传感芯片的尺寸；具体方法为：通过刻蚀或切割或者两者结合的工艺形成贯通第一凹槽和第二凹槽的通光孔，所述通光孔暴露出影像传感芯片的感测区；并在所述第一开口处形成用于电性连接所述影像传感芯片的焊垫的第一导电结构6；在所述第二开口处形成用于外接的第二导电结构7；优选的，第一导电结构和第二导电结构为导电胶、焊球或者金属凸点； 本实施例中利用植球的方式形成焊球。
步骤8、提供一不小于影像传感芯片的感光区尺寸的透光基板3，将所述透光基板键合于所述通光孔与所述第一凹槽的结合处；优选的，所述透光基板为IR滤光玻璃，所述IR滤光玻璃上覆盖有介质层，所述介质层正对所述通光孔的部分形成透光孔。介质层可以形成在透光基板第一表面也可以形成在第二表面，透光孔的形状可以是圆形或者其它形状；透光基板的尺寸不大于第一凹槽的尺寸；透光基板的形状与第一凹槽的形状可以相同或者相似。
步骤9、参见图10，将所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述第一导电结构键合连接；优选的，本实施例是采用金金键合的方式将盖板与影像传感芯片键合。将所述第二导电结构键合于所述软板的一面，并将所述软板的另一面及所述影像传感芯片的非功能面键合于所述散热板上。优选的，所述散热板可以是铜基板或者是铁基板等，具有较好导热性的基板，可以增加散热效果。
综上，本发明提供一种影像传感芯片的封装结构及其制作方法，该封装结构包括一盖板、一影像传感芯片、一透光基板、一软板、一散热板，其中，盖板单独制作好之后再与影像传感芯片键合，透光基板上覆盖有介质层，介质层上形成透光孔，透光基板埋入盖板中，盖板通光孔侧壁形成有防反射层，用于降低光线的散射与衍射，影像传感芯片与盖板键合后依次和软 板、散热板连接，这样做的好处是：首先，盖板单独制作可以防止图像传感芯片表面被污染，能实现高像素，同时解决了之前键合之后在芯片背部进行刻蚀等工艺时对芯片造成的损伤；其次，透光基板埋入或嵌入盖板中，进一步减小了封装体积；再次，透光基板上覆盖有介质层，介质层上形成透光孔，盖板通光孔侧壁形成有防反射层，可降低光线的散射与衍射；最后，影像传感芯片与盖板键合后依次和软板、散热板连接，这样使得封装体的散热性大大增加，对于某些气密性要求较高的产品，还可以在软板与封装体之间通过点胶的方式，实现封装体的密封效果。
以上实施例是参照附图，对本发明的优选实施例进行详细说明。本领域的技术人员通过对上述实施例进行各种形式上的修改或变更，但不背离本发明的实质的情况下，都落在本发明的保护范围之内。

Claims (12)

  1. 一种影像传感芯片的封装结构，其特征在于：包括影像传感芯片(1)、盖板(2)、透光基板(3)、软板(4)和散热板(5)，所述影像传感芯片的功能面包含感光区(101)和位于感光区周围的若干焊垫(102)；所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽(201)，所述第二表面形成有与所述第一凹槽相对的第二凹槽(202)，所述第一凹槽与所述第二凹槽之间贯通形成通光孔(203)，所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸，且不大于所述影像传感芯片的尺寸；所述透光基板键合于所述第一凹槽内或所述通光孔靠近所述第一凹槽处；所述第二凹槽底部除通光孔外的部分上形成有金属互连结构，所述金属互连结构包含与所述影像传感芯片的焊垫对应键合的第一导电结构(6)，该金属互连结构的电性自所述第一导电结构引至第二表面上的第二导电结构(7)；所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述金属互连结构上对应的第一导电结构键合连接；所述第二导电结构与所述软板的一面键合，所述软板的另一面及所述影像传感芯片的非功能面结合于所述散热板。
  2. 根据权利要求1所述的影像传感芯片的封装结构，其特征在于：所述金属互连结构包括依次铺设于所述第二凹槽及所述第二表面上的绝缘层(8)、金属线路层(9)和防焊层(10)， 所述第二凹槽底部的防焊层上预留有暴露出金属线路的与若干所述焊垫对应的若干第一开口(11)，所述第一开口处形成所述第一导电结构；所述第二表面上的防焊层上预留有暴露出金属线路的若干第二开口(12)，所述第二开口处形成所述第二导电结构。
  3. 根据权利要求2所述的影像传感芯片的封装结构，其特征在于：所述盖板第二表面与所述软板之间形成有密封环。
  4. 根据权利要求1所述的影像传感芯片的封装结构，其特征在于：所述第一凹槽的尺寸大于所述通光孔的尺寸，所述透光基板键合于所述第一凹槽的底部，且所述透光基板与所述第一凹槽的开口平齐。
  5. 根据权利要求1所述的影像传感芯片的封装结构，其特征在于：所述第一凹槽的尺寸小于所述通光孔的尺寸，所述透光基板键合于所述通光孔与所述第一凹槽的结合处。
  6. 根据权利要求1所述的影像传感芯片的封装结构，其特征在于：所述通光孔的侧壁上覆盖有防反射层，且所述通光孔高度不小于200um。
  7. 根据权利要求1所述的影像传感芯片的封装结构，其特征在于：所述透光基板为IR滤光玻璃，并且IR滤光玻璃上覆盖有介质层(301)，所述介质层正对所述通光孔位置形成透光孔。
  8. 一种影像传感芯片的封装结构的制作方法，其特征在于，包括如下步骤：
    a.提供一影像传感芯片(1)，所述影像传感芯片的功能面包含感光区(101)和位于感光区周围的若干焊垫(102)；
    b.提供一盖板(2)，所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽(201)，所述第二表面形成有与所述第一凹槽相对的第二凹槽(202)；
    c.提供一软板(4)和一散热板(5)；
    d.提供一不小于所述感光区尺寸的透光基板(3)，将所述透光基板嵌入键合于所述盖板的第一凹槽内；
    e.在所述盖板的第二凹槽及第二表面上铺设绝缘层(8)；
    f.在所述绝缘层上铺设金属线路层(9)；
    g.在所述金属线路层上形成防焊层(10)，并在所述第二凹槽底部的防焊层上预留暴露出金属线路的与若干所述焊垫对应的若干第一开口(11)；在所述第二表面上的防焊层上预留暴露出金属线路的若干第二开口(12)；
    h.形成贯通所述第一凹槽与所述第二凹槽的通光孔(203)，所述通光孔的尺寸小于所述第一凹槽的尺寸，且所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸不大于所述影响传感芯片的尺寸；
    i.在所述第一开口处形成用于电性连接所述影像传感 芯片的焊垫的第一导电结构(6)；在所述第二开口处形成用于电性连接所述软板的第二导电结构(7)；
    j.将所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述第一导电结构键合连接；
    k.将所述第二导电结构键合于所述软板的一面，并将所述软板的另一面及所述影像传感芯片的非功能面键合于所述散热板上。
  9. 一种影像传感芯片的封装结构的制作方法，其特征在于，包括如下步骤：
    a.提供一影像传感芯片(1)，所述影像传感芯片的功能面包含感光区(101)和位于感光区周围的若干焊垫(102)；
    b.提供一盖板(2)，所述盖板包含第一表面和与其相对的第二表面，所述第一表面上形成有第一凹槽(201)，所述第二表面形成有与所述第一凹槽相对的第二凹槽(202)；
    c.提高一软板(4)和一散热板(5)；
    d.在所述盖板的第二凹槽及第二表面上铺设绝缘层(8)；
    e.在所述绝缘层上铺设金属线路层(9)；
    f.在所述金属线路层上形成防焊层(10)，并在所述第二凹槽底部的防焊层上预留暴露出金属线路的与若 干所述焊垫对应的若干第一开口(11)；在所述第二表面上的防焊层上预留暴露出金属线路的若干第二开口(12)；
    g.形成贯通所述第一凹槽与所述第二凹槽的通光孔(203)，所述通光孔的尺寸大于所述第一凹槽的尺寸，且所述通光孔的尺寸不小于所述影像传感芯片的感光区的尺寸不大于所述影响传感芯片的尺寸；
    h.提供一不小于所述感光区尺寸的透光基板(3)，所述透光基板键合于所述通光孔与所述第一凹槽的结合处；
    i.在所述第一开口处形成用于电性连接所述影像传感芯片的焊垫的第一导电结构(6)；在所述第二开口处形成用于电性连接所述软板的第二导电结构(7)；
    j.将所述影像传感芯片放置于所述第二凹槽内，并使其感光区正对所述通光孔，使其焊垫与所述第一导电结构键合连接；
    k.将所述第二导电结构键合于所述软板的一面，并将所述软板的另一面及所述影像传感芯片的非功能面键合于所述散热板上。
  10. 根据权利要求8或9所述的影像传感芯片的封装结构的制作方法，其特征在于，所述透光基板为IR滤光玻璃，所述IR滤光玻璃上覆盖有介质层(301)，所述介质层正对所述通光孔的部分形成透光孔。
  11. 根据权利要求8或9所述的影像传感芯片的封装结构的制作方法，其特征在于，所述通光孔侧壁覆盖有防反射层。
  12. 根据权利要求8或9所述的影像传感芯片的封装结构的制作方法，其特征在于，所述盖板第二表面与所述软板之间形成有密封环。
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