WO2017160081A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2017160081A3
WO2017160081A3 PCT/KR2017/002803 KR2017002803W WO2017160081A3 WO 2017160081 A3 WO2017160081 A3 WO 2017160081A3 KR 2017002803 W KR2017002803 W KR 2017002803W WO 2017160081 A3 WO2017160081 A3 WO 2017160081A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
semiconductor light
conductive part
disposed
Prior art date
Application number
PCT/KR2017/002803
Other languages
English (en)
French (fr)
Other versions
WO2017160081A2 (ko
Inventor
전수근
김경민
김봉환
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2017160081A2 publication Critical patent/WO2017160081A2/ko
Publication of WO2017160081A3 publication Critical patent/WO2017160081A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

본 개시는, 반도체 발광소자에 있어서, 제1 도전부, 제2 도전부 및 제1 도전부와 제2 도전부 사이에 위치하는 절연부를 포함하는 기판; 기판 위에 위치하여 기판과 전기적으로 연결된 반도체 발광소자 칩; 기판 위에 위치하여, 반도체 발광소자 칩을 둘러싸고 있는 벽;으로서, 벽의 하면과 이어진 제1 내측면과 제1 내측면과 이어진 제2 내측면을 포함하는 벽; 그리고, 반사층;으로서, 제1 내측면에는 형성되지 않고 제2 내측면에만 형성된 반사층;을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
PCT/KR2017/002803 2016-03-18 2017-03-15 반도체 발광소자 WO2017160081A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160032787A KR20170109167A (ko) 2016-03-18 2016-03-18 반도체 발광소자
KR10-2016-0032787 2016-03-18

Publications (2)

Publication Number Publication Date
WO2017160081A2 WO2017160081A2 (ko) 2017-09-21
WO2017160081A3 true WO2017160081A3 (ko) 2018-08-02

Family

ID=59850846

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/002803 WO2017160081A2 (ko) 2016-03-18 2017-03-15 반도체 발광소자

Country Status (2)

Country Link
KR (1) KR20170109167A (ko)
WO (1) WO2017160081A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102325808B1 (ko) * 2019-07-17 2021-11-12 주식회사 에스엘바이오닉스 반도체 발광소자 및 이의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152808A (ja) * 2002-10-28 2004-05-27 Matsushita Electric Works Ltd 半導体発光装置
JP2005019688A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2008198782A (ja) * 2007-02-13 2008-08-28 Toyoda Gosei Co Ltd 発光装置
JP2011134926A (ja) * 2009-12-25 2011-07-07 Nichia Corp 半導体発光装置及びその製造方法
JP2012164930A (ja) * 2011-02-09 2012-08-30 Showa Denko Kk 半導体発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152808A (ja) * 2002-10-28 2004-05-27 Matsushita Electric Works Ltd 半導体発光装置
JP2005019688A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2008198782A (ja) * 2007-02-13 2008-08-28 Toyoda Gosei Co Ltd 発光装置
JP2011134926A (ja) * 2009-12-25 2011-07-07 Nichia Corp 半導体発光装置及びその製造方法
JP2012164930A (ja) * 2011-02-09 2012-08-30 Showa Denko Kk 半導体発光素子

Also Published As

Publication number Publication date
WO2017160081A2 (ko) 2017-09-21
KR20170109167A (ko) 2017-09-28

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