WO2017110834A1 - スピントロニクス素子 - Google Patents
スピントロニクス素子 Download PDFInfo
- Publication number
- WO2017110834A1 WO2017110834A1 PCT/JP2016/087999 JP2016087999W WO2017110834A1 WO 2017110834 A1 WO2017110834 A1 WO 2017110834A1 JP 2016087999 W JP2016087999 W JP 2016087999W WO 2017110834 A1 WO2017110834 A1 WO 2017110834A1
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- WIPO (PCT)
- Prior art keywords
- layer
- boron
- diffusion
- recording layer
- spintronic device
- Prior art date
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- 238000009792 diffusion process Methods 0.000 claims abstract description 82
- 230000005291 magnetic effect Effects 0.000 claims abstract description 81
- 229910052796 boron Inorganic materials 0.000 claims abstract description 79
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 78
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 20
- 230000002265 prevention Effects 0.000 claims description 36
- 230000005355 Hall effect Effects 0.000 claims description 6
- 230000006866 deterioration Effects 0.000 abstract description 19
- 230000009545 invasion Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 229910019236 CoFeB Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- -1 FeB Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Definitions
- the present invention relates to a spintronic device.
- a spintronic device including a boron (B) in a ferromagnetic layer, such as a magnetic tunnel junction device (MTJ) using a ferromagnetic material for a recording layer and a reference layer
- a ferromagnetic layer such as a magnetic tunnel junction device (MTJ) using a ferromagnetic material for a recording layer and a reference layer
- MTJ magnetic tunnel junction device
- the outward diffusion of boron after the dry etching process has a greater influence on the boron profile inside the device.
- the spintronic device 50 when the spintronic device 50 is miniaturized and the pattern size is reduced (d ⁇ d ′; d> d ′), the layer whose magnetic characteristics are deteriorated due to the outward diffusion of boron (the hatched line in the drawing) The range of 51) in the entire device increases. For this reason, the deterioration of the magnetic characteristics of the entire element becomes more remarkable as the size is reduced.
- FIG. 4 also shows that variations in the dimensions of the spintronic device 50 cause variations in the boron profile inside the device, causing variations in magnetic properties.
- the present invention has been made paying attention to such problems, and can prevent deterioration of magnetic characteristics due to outdiffusion of boron, has excellent magnetic characteristics, and magnetic characteristics due to dimensional variations accompanying miniaturization.
- An object of the present invention is to provide a spintronic device capable of preventing variations in the above.
- an object of the present invention is to provide a spintronic device capable of preventing deterioration of magnetic characteristics due to redistribution of nitrogen from the outside and variation in magnetic characteristics due to dimensional variations accompanying miniaturization.
- a spintronic device has a ferromagnetic layer containing boron and a diffusion prevention film provided to prevent outward diffusion of boron contained in the ferromagnetic layer. It is characterized by that.
- the spintronic device according to the present invention can prevent boron contained in the ferromagnetic layer from diffusing outward by the diffusion preventing film. For this reason, the concentration distribution of boron along the horizontal direction with respect to the film surface of the ferromagnetic layer inside the element can be maintained uniformly in the optimum state at the time of formation, and deterioration of magnetic characteristics can be prevented. .
- the spintronic device according to the present invention has excellent magnetic properties. Even if the dimensions of the element vary, the boron concentration distribution along the horizontal direction with respect to the film surface of the ferromagnetic layer inside the element does not vary within the element, and is maintained uniformly in an optimum state. Therefore, variations in magnetic characteristics can be prevented.
- the spintronic device according to the present invention can prevent variations in magnetic characteristics even with variations accompanying the progress of miniaturization.
- the diffusion prevention film include BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), Al 2 O 3 , Y 2 O 3 , ZrO 2 , MoO 2 , HfO 2 , Ta 2 O 5 , WO 3 , WO 3 , It consists of an oxide film in which CeO 2 , MgO or Gd 2 O 3 is doped with B, or a boron oxide film.
- the diffusion prevention film is preferably provided so as to cover the entire side surface of the ferromagnetic layer, but may cover a part of the side surface of the ferromagnetic layer.
- the anti-diffusion film covers the entire side surface of the ferromagnetic layer, boron out-diffusion from the side surface of the ferromagnetic layer can be prevented, and deterioration of magnetic properties due to boron out-diffusion is largely prevented. can do.
- the diffusion prevention film covers a part of the side surface of the ferromagnetic layer, the outward diffusion of boron from the side surface of the ferromagnetic layer can be prevented to some extent, and the deterioration of magnetic properties can be prevented.
- the diffusion prevention film preferably contains boron at a concentration higher than the concentration of boron contained in the ferromagnetic layer, and is particularly contained in a side edge portion of the ferromagnetic layer. It is preferable that boron is contained at a concentration higher than that of boron. In this case, the boron concentration gradient can prevent boron from diffusing from the side edge portion of the ferromagnetic layer toward the diffusion prevention film. Even when an oxidation treatment or a heat treatment is performed, boron contained in the diffusion preventing film may diffuse outward, but the outward diffusion of boron from the ferromagnetic layer can be suppressed.
- the diffusion prevention film is preferably configured to prevent nitrogen from entering the spintronic device from the outside.
- the diffusion preventing film can prevent nitrogen from being redistributed inside the element from a film formed outside the element, such as a SiN film. For this reason, it is possible to prevent deterioration of magnetic characteristics due to redistribution of nitrogen.
- the diffusion preventing film does not contain nitrogen. In this case, it is possible to prevent the magnetic properties from being deteriorated due to redistribution of nitrogen from the diffusion preventing film to the inside of the ferromagnetic layer or the like. In addition, it is possible to prevent the magnetic characteristics from being varied due to dimensional variations accompanying miniaturization.
- the spintronic device includes a magnetic tunnel junction device having a recording layer and a reference layer each having the ferromagnetic layer, and an insulating layer disposed between the recording layer and the reference layer,
- the diffusion prevention film may be provided so as to cover the side surface of the magnetic tunnel junction element. In this case, deterioration of the magnetic characteristics of the magnetic tunnel junction element can be prevented.
- the spintronic device may include, for example, a tunnel magnetoresistive device, a tunnel magnetoresistive memory device, a spin Hall effect device, an inverse spin Hall effect device, a domain wall motion memory device, or a spin torque high frequency device.
- the diffusion preventing film can prevent the magnetic characteristics of each element from deteriorating.
- a spintronic device that can prevent deterioration of magnetic properties due to out-diffusion of boron, has excellent magnetic properties, and can prevent variations in magnetic properties due to dimensional variations associated with miniaturization. can do.
- a spintronic device capable of preventing the deterioration of magnetic characteristics due to redistribution of nitrogen from the outside and the variation of magnetic characteristics due to dimensional variations accompanying miniaturization.
- FIG. 6A is a cross-sectional view showing a first modification example in which the recording layer has a multilayer structure
- FIG. 5B is a cross-sectional view showing a second modification example in which the recording layer has a multilayer structure. is there.
- the spintronic device 10 includes a magnetic tunnel junction device 11 and a diffusion prevention film 12.
- the magnetic tunnel junction element (MTJ) 11 includes a recording layer 21 and a reference layer 22 made of a ferromagnetic layer, and an insulating layer 23 disposed between the recording layer 21 and the reference layer 22.
- the recording layer 21 and the reference layer 22 are made of a ferromagnetic material and contain boron (B).
- the recording layer 21 and the reference layer 22 are made of, for example, a magnetic layer made of an alloy such as CoB, FeB, or CoFeB, or a magnetic layer containing one or more of these alloys.
- the insulating layer 23 is made of an insulating material, for example, MgO.
- the magnetic tunnel junction element 11 is formed by depositing each layer by sputtering, which is physical vapor deposition, molecular beam epitaxy (MBE), or the like.
- the diffusion preventing film 12 is provided so as to cover the side surface of the magnetic tunnel junction element 11.
- the diffusion preventing film 12 is boron contained in the side edge of the recording layer 21, that is, the portion where the recording layer 21 is in contact with the diffusion preventing film 12 and the vicinity thereof (for example, within 5 nm from the portion in contact with the diffusion preventing film 12).
- concentration of boron contained in the side edge of the reference layer 22, that is, the portion where the reference layer 22 is in contact with the diffusion prevention film 12 and the vicinity thereof for example, within 5 nm from the portion in contact with the diffusion prevention film 12).
- the diffusion preventing film 12 prevents the outward diffusion of boron contained in the recording layer 21 and the reference layer 22.
- the diffusion prevention film 12 contains boron at a concentration higher than the concentration of boron contained in the entire recording layer 21 and the entire reference layer 22, and prevents outward diffusion of boron contained in the recording layer 21 and the reference layer 22. You may come to do.
- the diffusion preventing film 12 is made of, for example, BSG (boron silicate glass) or BPSG (boron phosphorus silicate glass).
- the diffusion preventing film 12 is formed by, for example, a CVD method.
- the recording layer 21 and reference layer 22 is made of (Co 25 Fe 75) 70 B 30, (Co 25 Fe 75) 70 molar mass of B 30 is 42.877 g / mol, density 8.2 g / Since it is cm 3 , the boron number concentration in the recording layer 21 and the reference layer 22 is 3.45 ⁇ 10 22 cm ⁇ 3 .
- the diffusion preventing film 12 is formed so as to contain boron at a concentration higher than the number concentration.
- the spintronic device 10 prevents boron contained in the recording layer 21 and the reference layer 22 from diffusing from the side edge portions of the recording layer 21 and the reference layer 22 toward the diffusion preventing film 12 due to the boron concentration gradient. And out diffusion of boron contained in the recording layer 21 and the reference layer 22 can be prevented. For this reason, the concentration distribution of boron along the horizontal direction with respect to the film surfaces of the recording layer 21 and the reference layer 22 inside the magnetic tunnel junction element 11 can be maintained uniformly in the optimum state at the time of formation. .
- the boron profile along the direction perpendicular to the film surfaces of the recording layer 21 and the reference layer 22 that are ferromagnetic films can be maintained in an optimum state, and therefore the magnetic characteristics of the magnetic tunnel junction element 11 are deteriorated. Can be prevented. Even if the dimensions of the element vary, the boron concentration distribution along the horizontal direction with respect to the film surfaces of the recording layer 21 and the reference layer 22 inside the magnetic tunnel junction element 11 does not vary within the element, and the optimum. Therefore, the boron profile along the direction perpendicular to the film surfaces of the recording layer 21 and the reference layer 22 that are ferromagnetic films can be maintained in an optimal state, and variations in magnetic characteristics can be achieved. It can also be prevented.
- the spintronic device 10 has excellent magnetic properties.
- the spintronic device 10 can prevent variations in magnetic characteristics against variations due to progress in miniaturization.
- the spintronic device 10 can prevent nitrogen from entering the inside of the magnetic tunnel junction device 11 such as the recording layer 21 and the reference layer 22 by the diffusion preventing film 12. For this reason, it is possible to prevent nitrogen from being redistributed inside the device from a film formed outside the device, such as a SiN film. For this reason, it is possible to prevent deterioration of magnetic characteristics due to redistribution of nitrogen. In addition, it is possible to prevent the magnetic characteristics from being varied due to a variation in the element due to nitrogen due to dimensional variations accompanying miniaturization.
- the diffusion prevention film 12 does not contain nitrogen. In this case, it is possible to prevent the magnetic characteristics from deteriorating due to redistribution of nitrogen from the diffusion prevention film 12 to the inside of the magnetic tunnel junction element 11 as well as from the outside of the element.
- the diffusion prevention film 12 is provided so as to cover the entire side surfaces of the recording layer 21 and the reference layer 22, but covers a part of each of the side surfaces of the recording layer 21 and the reference layer 22. It may be provided. Even in this case, the outward diffusion of boron from the side surfaces of the recording layer 21 and the reference layer 22 can be prevented to some extent, and the deterioration of magnetic characteristics can be prevented.
- the side surfaces of the recording layer 21 and the reference layer 22 are integrally covered with one diffusion prevention film 12, but the side surfaces of the recording layer 21 and the reference layer 22 are respectively separate diffusion prevention films. 12 may be covered.
- the diffusion prevention film 12 covering the side surface of the recording layer 21 contains boron at a concentration higher than the concentration of boron contained in the side edge of the recording layer 21, and the diffusion prevention film 12 covering the side surface of the reference layer 22.
- it is sufficient that boron is contained at a concentration higher than the concentration of boron contained in the side edge portion of the reference layer 22.
- boron contained in the recording layer 21 and the reference layer 22 can be prevented from diffusing outward, and deterioration of magnetic characteristics can be prevented.
- the diffusion prevention film 12 is formed outside the magnetic tunnel junction element 11, but boron ions are formed on the side edges of the recording layer 21 and the reference layer 22 using an ion implantation method or a plasma doping method. May be formed to form portions containing boron at a higher concentration than the central portions of the recording layer 21 and the reference layer 22, respectively.
- the side edge portions of the recording layer 21 and the reference layer 22 into which boron has been introduced serve as the diffusion preventing film 12, and outward diffusion of boron contained in the central portions of the recording layer 21 and the reference layer 22 can be prevented.
- each of the recording layer 21 and the reference layer 22 is not limited to a single ferromagnetic layer, and a plurality of ferromagnetic layers and layers other than ferromagnetic layers such as a non-ferromagnetic layer and a cap layer are stacked. It may be formed.
- the recording layer 21 may have a structure in which a nonmagnetic coupling layer 33 made of Ta is sandwiched between a pair of ferromagnetic layers 31 and 32 made of CoFeB. Good.
- an insulating layer 34 made of MgO is formed on the surface of the recording layer 21 opposite to the insulating layer 23.
- the nonmagnetic coupling layer 33 is made of Ta, but is not limited to Ta, and is made of W, Hf, Zr, Nb, Mo, Ti, Mg, MgO, or the like. May be.
- the recording layer 21 may have a structure in which thin CoFe layers 36 and 37 are formed on both sides of the CoFeB layer 35, respectively.
- insulating layers 38 and 39 made of MgO are formed on the surface of the CoFe layers 36 and 37 opposite to the CoFeB layer 36. These insulating layers 38 and 39 can constitute the insulating layer 23 and the insulating layer 34.
- the recording layer 21 has a multilayer structure, but the reference layer 22 may have a similar multilayer structure.
- the spintronic device 10 includes the magnetic tunnel junction device 11.
- the spintronic device 10 is not limited to the magnetic tunnel junction device 11, and any device can be used as long as it has a ferromagnetic layer containing boron. You may have.
- it may be composed of a tunnel magnetoresistive element, a tunnel magnetoresistive memory element, a spin Hall effect element, an inverse spin Hall effect element, a domain wall motion memory element, or a spin torque high frequency element.
- a magnetic tunnel junction element (MTJ) 11 shown in FIG. 1 was manufactured, and a tunnel magnetoresistance ratio (TMR ratio) was measured.
- TMR ratio tunnel magnetoresistance ratio
- an MTJ without the diffusion prevention film 12 was also prepared and the TMR ratio was measured.
- Both the MTJ of FIG. 1 having the diffusion prevention film 12 and the MTJ not having the diffusion prevention film 12 are formed in a columnar shape, and the configuration of the recording layer, the reference layer, and the insulating layer other than the diffusion prevention film 12 Were the same.
- the actual MTJ is not a true cylinder due to processing variations, but the MTJ diameter is assumed to be a cylinder from the resistance value of the element. Calculated.
- Table 1 shows the measurement results of the TMR ratio of each MTJ.
- the TMR ratio in Table 1 is expressed as a ratio (percentage) to the TMR ratio before the heat treatment (after the dry etching process) in each MTJ manufacturing process.
- the TMR ratio was lowered by the heat treatment because the magnetic properties deteriorated due to the outward diffusion of boron by the heat treatment. Further, in the MTJ that does not have the diffusion prevention film 12, as the diameter becomes smaller, the ratio of the layer having deteriorated magnetic characteristics to the entire element increases as the diameter becomes smaller, so that the decrease rate of the TMR ratio also increases. It was confirmed that In contrast, in the MTJ of FIG. 1 having the diffusion prevention film 12, the diffusion prevention film 12 can prevent the outward diffusion of boron, so that the TMR ratio does not decrease after heat treatment but rather increases. Was confirmed.
- the spintronic device includes, for example, a magnetoresistive change memory (MRAM) using spin injection magnetization reversal (STT), that is, a general-purpose memory product equipped with STT-MRAM and a mixed SoC (System-on-a-chip). ) It can be suitably used for products.
- MRAM magnetoresistive change memory
- STT spin injection magnetization reversal
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Abstract
Description
図1乃至図3は、本発明の実施の形態のスピントロニクス素子10を示している。
図1に示すように、スピントロニクス素子10は、磁気トンネル接合素子11と拡散防止膜12とを有している。
スピントロニクス素子10は、ホウ素の濃度勾配により、記録層21および参照層22に含まれるホウ素が、記録層21および参照層22の側縁部からそれぞれ拡散防止膜12に向かって拡散するのを防ぐことができ、記録層21および参照層22に含まれるホウ素の外方拡散を防ぐことができる。このため、磁気トンネル接合素子11の内部の、記録層21および参照層22の膜面に対して水平方向に沿ったホウ素の濃度分布を、形成時の最適な状態で均一に維持することができる。これにより、強磁性膜である記録層21および参照層22の膜面に垂直な方向に沿ったホウ素のプロファイルを最適な状態に保つことができるため、磁気トンネル接合素子11の磁気特性の劣化を防ぐことができる。また、素子の寸法がばらついても、磁気トンネル接合素子11の内部の、記録層21および参照層22の膜面に対して水平方向に沿ったホウ素の濃度分布が素子内においてばらつかず、最適な状態で均一に維持されるため、強磁性膜である記録層21および参照層22の膜面に垂直な方向に沿ったホウ素のプロファイルを最適な状態に保つことができ、磁気特性のばらつきを防止することもできる。
11 磁気トンネル接合素子
21 記録層
22 参照層
23 絶縁層
12 拡散防止膜
31,32 強磁性層
33 非磁性結合層
34 絶縁層
35 CoFeB層
36,37 CoFe層
38,39 絶縁層
50 スピントロニクス素子
51 磁気特性が劣化した層
Claims (8)
- ホウ素を含む強磁性層と、
前記強磁性層に含まれるホウ素の外方拡散を防止するよう設けられた拡散防止膜とを、
有することを特徴とするスピントロニクス素子。 - 前記拡散防止膜は、外部から前記スピントロニクス素子の内部に窒素が侵入するのを防止するよう構成されていることを特徴とする請求項1記載のスピントロニクス素子。
- 前記拡散防止膜は、前記強磁性層の側面の一部または全体を覆うよう設けられていることを特徴とする請求項1または2記載のスピントロニクス素子。
- 前記拡散防止膜は、前記強磁性層の側縁部に含まれるホウ素の濃度より高い濃度でホウ素を含んでいることを特徴とする請求項1乃至3のいずれか1項に記載のスピントロニクス素子。
- 前記拡散防止膜は、前記強磁性層に含まれるホウ素の濃度より高い濃度でホウ素を含んでいることを特徴とする請求項1乃至3のいずれか1項に記載のスピントロニクス素子。
- 前記拡散防止膜は、窒素を含んでいないことを特徴とする請求項1乃至5のいずれか1項に記載のスピントロニクス素子。
- それぞれ前記強磁性層を有する記録層および参照層と、前記記録層と前記参照層との間に配置された絶縁層とを有する磁気トンネル接合素子を有し、
前記拡散防止膜は、前記磁気トンネル接合素子の側面を覆うよう設けられていることを
特徴とする請求項1乃至6のいずれか1項に記載のスピントロニクス素子。 - トンネル磁気抵抗素子、トンネル磁気抵抗メモリ素子、スピンホール効果素子、逆スピンホール効果素子、磁壁移動メモリ素子またはスピントルク高周波素子を有することを特徴とする請求項1乃至7のいずれか1項に記載のスピントロニクス素子。
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