WO2017101524A1 - 像素结构及其制作方法、阵列基板及显示装置 - Google Patents

像素结构及其制作方法、阵列基板及显示装置 Download PDF

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WO2017101524A1
WO2017101524A1 PCT/CN2016/098049 CN2016098049W WO2017101524A1 WO 2017101524 A1 WO2017101524 A1 WO 2017101524A1 CN 2016098049 W CN2016098049 W CN 2016098049W WO 2017101524 A1 WO2017101524 A1 WO 2017101524A1
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layer
source
drain
gate
pixel structure
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PCT/CN2016/098049
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English (en)
French (fr)
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郝学光
先建波
李盼
吴新银
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京东方科技集团股份有限公司
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Priority to US15/531,814 priority Critical patent/US10209596B2/en
Publication of WO2017101524A1 publication Critical patent/WO2017101524A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/42312—Gate electrodes for field effect devices
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    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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    • G02F2201/50—Protective arrangements

Definitions

  • the present disclosure relates to the field of display, and in particular, to a pixel structure and a method for fabricating the same, an array substrate, and a display device.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the TFT-LCD is mainly composed of an array substrate of a pair of boxes and a color filter substrate, wherein a gate layer (including a gate and a gate line), a source/drain layer (including a source, a drain, and a data line) and a pixel electrode are formed on the array substrate. .
  • an aspect of the present disclosure provides a pixel structure including a substrate substrate and a gate layer and a source/drain layer disposed on the substrate. There is an overlap region between the gate layer and the source drain layer, and the gate layer and/or the source drain layer includes a hollow structure located at the overlap region.
  • the source drain layer and the gate layer can be effectively reduced by providing a hollow structure at a position overlapping the source/drain layer on the gate layer and/or a position overlapping the gate layer on the source/drain layer.
  • the overlap area between them reduces the coupling capacitance of the gate layer and the source and drain layers.
  • the inclusion of the hollow structure not only enhances the driving capability of the pixel TFT, but also improves the charge and discharge capability of the pixel.
  • the hollow structure includes one or more openings.
  • the shape of the opening of the hollow structure is any one of the following: a triangle, a rectangle, a circle.
  • the gate layer comprises a gate of the thin film transistor
  • the source drain layer comprises a thin The source and drain of the membrane transistor
  • the overlap region includes an overlap region between the source and the gate.
  • the overlap region includes an overlap region between the drain and the gate.
  • the source drain layer further includes a data line connected to the source, wherein the width of the source is less than the width of the data line.
  • the channel length of the thin film transistor is from 2 micrometers to 8 micrometers, and in particular, the channel length of the thin film transistor may be 5 micrometers.
  • the advantage of such a channel length is that the area of the gate can be reduced, thereby not only reducing the overlap region of the source/drain layer and the gate layer, but also avoiding an increase in leakage current of the thin film transistor due to a decrease in the source width.
  • the source drain layer further includes an intermediate electrode disposed between the source and the drain and separated from the source and the drain.
  • the intermediate electrode may constitute a thin film transistor with the source and the drain, respectively, thereby avoiding increasing the leakage current of the thin film transistor by reducing the source width.
  • the base substrate further includes a gate insulating layer, an active layer, a protective layer, and a pixel electrode.
  • the active layer is made of amorphous silicon, polysilicon or an oxide semiconductor material.
  • Another aspect of the present disclosure also provides an array substrate including the above-described pixel structure.
  • a further aspect of the present disclosure also provides a display device comprising the above array substrate.
  • Another aspect of the present disclosure provides a method of fabricating a pixel structure, including forming a gate layer on a base substrate, forming a gate insulating layer, an active layer, and a source/drain layer on the gate layer; forming a source/drain layer a protective layer; a pixel electrode is formed on the protective layer.
  • a method of fabricating a pixel structure including forming a gate layer on a base substrate, forming a gate insulating layer, an active layer, and a source/drain layer on the gate layer; forming a source/drain layer a protective layer; a pixel electrode is formed on the protective layer.
  • the method further includes forming a hollow structure at the overlap region on the gate layer and/or the source drain layer.
  • FIG. 1 is a top plan view of a pixel structure in accordance with an embodiment of the present disclosure
  • Figure 2 is a schematic cross-sectional view taken along line AA' of Figure 1;
  • Figure 3 is a schematic cross-sectional view taken along line BB' of Figure 1;
  • FIG. 4 is a schematic diagram of another pixel structure in accordance with an embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of still another pixel structure in accordance with an embodiment of the present disclosure.
  • FIG. 6 is a flow chart of a method of fabricating a pixel structure in accordance with an embodiment of the present disclosure.
  • Embodiments of the present disclosure provide a pixel structure including a substrate substrate and a gate layer and a source/drain layer disposed on the substrate. There is an overlap region between the gate layer and the source drain layer, and the gate layer and/or the source drain layer includes a hollow structure located in the overlap region.
  • the source and drain layers can be effectively reduced by providing a hollow structure at a position overlapping the source/drain layer on the gate layer and/or a position overlapping the gate layer on the source/drain layer.
  • the overlap area between the gate layers thereby reducing the coupling capacitance of the gate layer and the source and drain layers.
  • the inclusion of the hollow region not only enhances the driving ability of the pixel TFT, but also improves the charge and discharge capability of the pixel.
  • the hollow structure may be located on the gate layer, or may be located on the source and drain layers, or a hollow structure may be disposed on both the gate layer and the source and drain layers.
  • the hollow structure on the gate layer and/or the hollow structure on the source and drain layers may include one or more openings.
  • the shape of the opening may be a triangle, a rectangle (such as a rectangle, a square), a circle, or other irregular shape.
  • FIG. 1 is a top view of a pixel structure in accordance with an embodiment of the present disclosure.
  • the pixel structure generally includes a base substrate on which a gate layer, a gate insulating layer (GI layer), an active layer, a source/drain layer, a protective layer (PL layer), a pixel electrode, and the like are provided.
  • the gate layer 10 includes a gate electrode 12 and a gate line 11 connected to the gate electrode.
  • the source drain layer 20 includes a source 22 of the thin film transistor, a drain 23, and a data line 21 connected to the source 22.
  • the pixel electrode 30 is connected to the drain 23 through a via hole (a region in the dashed frame 1) on the protective layer.
  • the active layer is located in the area within the dashed box 2.
  • the source 22 is provided with a hollow structure at a position overlapping the gate electrode 12, the hollow structure including a plurality of openings 24. As shown, the opening 24 exposes the gate 12.
  • the hollow structure in the source 22 may be disposed at any one of the gate 12, the source 22, and the drain 23 or Multiple on.
  • Figure 2 is a schematic cross-sectional view taken along line AA' of Figure 1.
  • the gate layer 10 the gate insulating layer (GI layer) 40, the active layer 50, the source/drain layer 20, and the protective layer (PL layer) 60
  • the substrate 100 is sequentially disposed.
  • the opening 24 at a position where the source drain layer 20 overlaps the gate layer 10, the overlapping area of the source/drain layer 20 and the gate layer 10 can be effectively reduced, thereby reducing the coupling capacitance of the gate layer and the source/drain layer.
  • Figure 3 is a schematic cross-sectional view taken along line BB' of Figure 1. As shown in FIG. 3, the pixel electrode 30 is connected to the drain 23 in the source/drain layer 20 through a via hole on the protective layer 60.
  • the material of the gate layer 10 may be molybdenum (Mo) or aluminum (Al), and the material of the active layer 50 may be amorphous silicon, polysilicon or an oxide semiconductor material.
  • the manufacturing method thereof may include the steps as shown in FIG. 6.
  • a gate layer is formed on the base substrate.
  • one or more metal thin films may be deposited on the base substrate (which may be a glass substrate), and the material of the metal thin film may be Mo, Al or an alloy thereof or the like.
  • the gate layer is formed by subjecting the metal thin film to a mask exposure, development, etching, or the like.
  • the gate layer may include a gate line (gate metal trace) and a gate pattern of the thin film transistor.
  • a gate insulating layer, an active layer and a source/drain layer are formed on the gate layer.
  • a gate insulating layer GI
  • a semiconductor thin film is formed using a material such as amorphous silicon, polycrystalline silicon, or an oxide semiconductor.
  • An active layer of the thin film transistor is formed by subjecting the semiconductor film to a mask exposure, development, etching, or the like.
  • one or more metal thin films are deposited, and the material of the metal thin film may be Mo, Al or an alloy thereof or the like.
  • the source/drain layer is formed by subjecting the metal thin film to a process such as exposure, development, etching, or the like.
  • a gate insulating layer (GI layer), an active layer, and a source/drain layer are sequentially disposed on the gate layer.
  • the source and drain layers include a source, a drain, and a data line of the thin film transistor.
  • a protective layer is formed on the source/drain layer.
  • a protective layer is formed on the source/drain layer using a resin material or other inorganic material.
  • a via hole may be formed thereon by a process such as exposure, development, or the like as needed.
  • a pixel electrode is formed on the protective layer.
  • a transparent conductive film such as an ITO material
  • a transparent conductive pattern such as a pixel electrode or a common electrode is formed by a process such as exposure, development, etching, or the like.
  • a hollow structure located in the overlap region is formed on the gate layer and/or the source/drain layer.
  • the hollow structure can be formed by processes such as exposure, development, etching, and the like.
  • the width of the source may also be appropriately reduced.
  • the width D of the source 22 may be smaller than that of the source drain layer.
  • the thin film transistor has a channel length L of from 2 microns to 8 microns, such as 5 microns.
  • the advantage of such a channel length is that the area of the gate can be reduced, thereby not only reducing the overlap region of the source/drain layer and the gate layer, but also avoiding an increase in leakage current of the thin film transistor due to a decrease in the source width.
  • an intermediate electrode may be disposed between the source and the drain of the thin film transistor, thereby forming two thin film transistors connected in series.
  • the source/drain layer 20 includes not only the source 22, the drain 23, and the data line 21 connected to the source 22 of the thin film transistor, but also the source 22 and the drain 23.
  • the intermediate electrode 25 is separated from the source 22 and the drain 23. The presence of the intermediate electrode 25 enables two thin film transistors in series (i.e., the source 22 and the intermediate electrode 25 form a thin film transistor, and the intermediate electrode 25 and the drain 23 form another thin film transistor), thereby reducing leakage current.
  • the above-mentioned pixel structure may be a pixel structure in a TN mode display device, or may be a pixel structure in a VA, IPS or ADS mode display device, which is not specifically limited in the present disclosure.
  • the source and drain layers can be effectively reduced by providing a hollow structure at a position overlapping the source/drain layer on the gate layer and/or a position overlapping the gate layer on the source/drain layer.
  • the overlapping area of the gate layers thereby reducing the coupling capacitance of the gate layer and the source and drain layers.
  • the inclusion of the hollow structure not only avoids a large amount of change ( ⁇ Vp) of the pixel voltage, but also does not cause the gray scale displayed at the end of the pixel to seriously deviate from the gray scale desired by the originally written voltage, and also avoids data line writing.
  • the symmetrical voltage of the positive and negative polarity is shifted downward to generate DC residual.
  • an embodiment of the present disclosure further provides an array substrate including the above pixel structure.
  • Embodiments of the present disclosure also provide a display device including the above array substrate.
  • the display device may be any product or component having a display function such as a notebook computer display, a liquid crystal display, a liquid crystal television, a digital photo frame, a mobile phone, a tablet computer, or the like.

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Abstract

一种像素结构、阵列基板及显示装置。该像素结构包括衬底基板（100）以及设置在衬底基板（100）上的栅层（10）和源漏层（20）。栅层（10）与源漏层（20）之间存在交叠区域，并且栅层（10）和/或源漏层（20）包括位于交叠区域的镂空结构。

Description

像素结构及其制作方法、阵列基板及显示装置 技术领域
本公开涉及显示领域，尤其涉及一种像素结构及其制作方法、阵列基板及显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)具有体积小、功耗低、无辐射等特点，在当前平板显示器市场中占据了主导地位。TFT-LCD主要由对盒的阵列基板和彩膜基板构成，其中阵列基板上形成有栅层(包括栅极和栅线)、源漏层(包括源极、漏极和数据线)和像素电极。
然而，在现有的阵列基板中，由于栅层与源漏层存在交叠区域，使栅层与源漏层之间存在较大的耦合电容，造成像素的TFT驱动能力不足，像素充电速度较缓慢。该耦合电容容易造成较大的像素电压变化量(ΔVp)，使得数据线写入的所设定的像素电压在TFT关断后有所变动。这样的变动进而使像素最后所显示的灰阶偏离原来写入电压所希望表现的灰阶，并且使原来数据线写入正负极性大小对称的电压向下偏离而产生直流残留。
发明内容
为了至少部分地缓解或甚至消除现有技术中存在的问题，本公开的一个方面提供了一种像素结构，包括衬底基板以及设置在衬底基板上的栅层和源漏层。栅层与源漏层之间存在交叠区域，并且栅层和/或源漏层包括位于该交叠区域的镂空结构。
在本公开提供的像素结构中，通过在栅层上与源漏层交叠的位置和/或源漏层上与栅层交叠的位置设置镂空结构，可以有效减小源漏层与栅层之间的交叠面积，从而减小栅层与源漏层的耦合电容。镂空结构的包括不仅增强了像素TFT的驱动能力，而且提升了像素的充放电能力。
根据一些实施例，镂空结构包括一个或多个开口。
根据一些实施例，镂空结构的开口的形状为以下的任意一种：三角形、矩形、圆形。
根据一些实施例，栅层包括薄膜晶体管的栅极，并且源漏层包括薄 膜晶体管的源极和漏极。
根据一些实施例，交叠区域包括源极与栅极之间的交叠区域。
根据一些实施例，交叠区域包括漏极与栅极之间的交叠区域。
根据一些实施例，源漏层还包括与源极相连的数据线，其中源极的宽度小于数据线的宽度。通过减小源极的宽度，可以进一步减小源漏层与栅层的交叠面积。
根据一些实施例，薄膜晶体管的沟道长度为2微米～8微米，特别地，薄膜晶体管的沟道长度可以为5微米。这样的沟道长度的优点在于可以减小栅极的面积，进而不仅可以减小源漏层与栅层的交叠区域，而且可以避免由于源极宽度减小导致的薄膜晶体管漏电流增加。
根据一些实施例，源漏层还包括设置在源极与漏极之间且与源极和漏极分离的中间电极。中间电极可以分别与源极和漏极构成薄膜晶体管，从而避免由于减小源极宽度而增加薄膜晶体管的漏电流。
根据一些实施例，衬底基板还包括栅极绝缘层、有源层、保护层和像素电极。
根据一些实施例，有源层由非晶硅、多晶硅或氧化物半导体材料制成。
本公开的另一方面还提供了一种阵列基板，包括上述的像素结构。
本公开另外的方面还提供了一种显示装置，包括上述的阵列基板。
本公开的另一方面提供了一种像素结构的制作方法，包括在衬底基板上形成栅层；在栅层上形成栅极绝缘层，有源层和源漏层；在源漏层上形成保护层；在保护层上形成像素电极。栅层与源漏层之间存在交叠区域，并且方法还包括在栅层和/或源漏层上形成位于交叠区域的镂空结构。
应当指出的是，本公开的各方面具有相同或类似的优点和示例实施例，在此不再赘述。
附图说明
图1是根据本公开实施例的一种像素结构的顶视图；
图2是图1中沿AA’方向的截面示意图；
图3是图1中沿BB’方向的截面示意图；
图4是根据本公开实施例的另一种像素结构的示意图；
图5是根据本公开实施例的又一种像素结构的示意图；
图6是根据本公开实施例的像素结构的制作方法的流程图。
具体实施方式
下面结合附图和实施例，对本公开的具体实施方式作进一步详细描述。以下实施例用于说明本公开，但不用来限制本公开的范围。
本公开实施例提供了一种像素结构，该像素结构包括衬底基板以及设置在衬底基板上的栅层和源漏层。栅层与源漏层之间存在交叠区域，并且栅层和/或源漏层包括位于交叠区域的镂空结构。
在本公开实施例提供的像素结构中，通过在栅层上与源漏层交叠的位置和/或源漏层上与栅层交叠的位置设置镂空结构，可以有效减小源漏层与栅层之间的交叠面积，从而减小栅层与源漏层的耦合电容。镂空区域的包括不仅增强了像素TFT的驱动能力，而且提升了像素的充放电能力。
镂空结构可以位于栅层上，或者可以位于源漏层上，或者也可以在栅层和源漏层上均设置镂空结构。
为了减小栅极与源漏极的耦合电容，栅层上的镂空结构和/或源漏层上的镂空结构可以包括一个或多个开口。开口的形状可以为三角形、矩形(如长方形、正方形)、圆形或者其他不规则形状。
参见图1，图1是根据本公开实施例的一种像素结构的顶视图。像素结构通常包括衬底基板，在衬底基板上设置有栅层、栅极绝缘层(GI层)、有源层、源漏层、保护层(PL层)、像素电极等。如图1所示，栅层10包括栅极12以及与栅极相连的栅线11。源漏层20包括薄膜晶体管的源极22、漏极23以及与源极22相连的数据线21。像素电极30通过保护层上的过孔(虚线框1内的区域)与漏极23相连。有源层位于虚线框2内的区域。
栅层10与源漏层20之间存在交叠区域，其包括源极22与栅极12之间的交叠区域。源极22在与栅极12交叠的位置设置有镂空结构，该镂空结构包括多个开口24。如图所示，开口24暴露栅极12。
应当指出的是，尽管在图1中以镂空结构设置在源极22上为例来说明本公开的概念，但是镂空结构可以设置在栅极12、源极22和漏极23中的任一个或多个上。
图2是图1中沿AA’方向的截面示意图。如图2所示，栅层10、栅极绝缘层(GI层)40、有源层50、源漏层20、保护层(PL层)60 依次设置在衬底基板100上。通过在源漏层20与栅层10交叠的位置处设置开口24，可以有效减小源漏层20与栅层10的交叠面积，从而减小栅层与源漏层的耦合电容。
图3是图1中沿BB’方向的截面示意图。如图3所示，像素电极30通过保护层60上的过孔与源漏层20中的漏极23相连。
栅层10的材料可以为钼(Mo)或铝(Al)，有源层50的材料可以为非晶硅、多晶硅或氧化物半导体材料。
具体地，对于上述的像素结构，其制作方法可以包括如图6所示的步骤。
在步骤S1中，在衬底基板上形成栅层。例如在衬底基板(可以为玻璃基板)上沉积一层或多层金属薄膜，该金属薄膜的材料可以为Mo、Al或其合金等。通过对该金属薄膜进行掩膜板曝光、显影、刻蚀等处理，形成栅层。具体的，栅层可以包括栅线(栅极金属走线)及薄膜晶体管的栅极图形。
在步骤S2中，在栅层上形成栅极绝缘层，有源层和源漏层。例如，在栅层上沉积栅极绝缘层(GI)，然后采用非晶硅、多晶硅、或者氧化物半导体等材料形成半导体薄膜。通过对该半导体薄膜进行掩膜板曝光、显影、刻蚀等工艺处理，形成薄膜晶体管的有源层(Active Layer)。然后沉积一层或多层金属薄膜，该金属薄膜的材料可以为Mo、Al或其合金等。通过对该金属薄膜进行曝光、显影、刻蚀等工艺处理，形成源漏层。具体的，在栅层上依次设置栅极绝缘层(GI层)、有源层、源漏层。源漏层包括薄膜晶体管的源极、漏极、数据线。
在步骤S3中，在源漏层上形成保护层。例如，采用树脂材料或其他无机材料在源漏层上形成保护层。当然，根据需要还可以通过曝光、显影等工艺在其上形成过孔(via hole)。
在步骤S4中，在保护层上形成像素电极。例如，在保护层上沉积一层透明导电薄膜(如ITO材料)，通过曝光、显影、刻蚀等工艺形成像素电极或公共电极等透明导电图案。
在步骤S5中，在栅层和/或源漏层上形成位于交叠区域的镂空结构。镂空结构可以通过曝光、显影、刻蚀等工艺形成。
为了进一步地减小源漏层与栅层的交叠面积，还可以适当减小源极的宽度。例如，可以如图4所示，源极22的宽度D可以小于源漏层在 其他位置处的数据线21的宽度d。
在一些实施例中，薄膜晶体管的沟道长度L为2微米～8微米，例如为5微米。这样的沟道长度的优点在于可以减小栅极的面积，进而不仅可以减小源漏层与栅层的交叠区域，而且可以避免由于源极宽度减小导致的薄膜晶体管漏电流增加。
此外，为避免由于减小源极宽度从而增加薄膜晶体管的漏电流，还可以在薄膜晶体管的源极与漏极之间设置中间电极，从而形成两个串联的薄膜晶体管。如图5所示，在像素结构中，源漏层20不仅包括薄膜晶体管的源极22、漏极23以及与源极22相连的数据线21，还包括设置在源极22与漏极23之间且与源极22和漏极23分离的中间电极25。中间电极25的存在使得能够实现两个串联的薄膜晶体管(即源极22与中间电极25形成一个薄膜晶体管，中间电极25与漏极23形成另一个薄膜晶体管)，进而降低漏电流。
上述的像素结构可以为TN模式显示装置中的像素结构，也可以为VA，IPS或ADS模式显示装置中的像素结构，本公开对此不作具体限定。
在本公开实施例提供的像素结构中，通过在栅层上与源漏层交叠的位置和/或源漏层上与栅层交叠的位置设置镂空结构，可以有效减小源漏层与栅层的交叠面积，从而减小栅层与源漏层的耦合电容。镂空结构的包括不仅避免了像素电压产生较大的变化量(ΔVp)，不会使像素最后所显示的灰阶严重偏离原来写入的电压所希望表现的灰阶，而且也避免了数据线写入的正负极性大小对称的电压向下偏离而产生直流残留。
此外，本公开实施例还提供了一种阵列基板，包括上述的像素结构。
本公开实施例还提供了一种显示装置，包括上述的阵列基板。该显示装置可以是笔记本电脑显示屏、液晶显示器、液晶电视、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
以上实施方式仅用于说明本公开，而并非对本公开的限制，有关技术领域的普通技术人员，在不脱离本公开的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本公开的范畴，本公开的保护范围应由权利要求限定。

Claims (15)

  1. 一种像素结构，包括衬底基板以及设置在所述衬底基板上的栅层和源漏层，所述栅层与所述源漏层之间存在交叠区域，并且所述栅层和/或所述源漏层包括位于所述交叠区域的镂空结构。
  2. 根据权利要求1所述的像素结构，其中，所述镂空结构包括一个或多个开口。
  3. 根据权利要求2所述的像素结构，其中，所述镂空结构中开口的形状为以下的任意一种：三角形、矩形、圆形。
  4. 根据权利要求1所述的像素结构，其中，所述栅层包括薄膜晶体管的栅极，所述源漏层包括所述薄膜晶体管的源极和漏极。
  5. 根据权利要求4所述的像素结构，其中，所述交叠区域包括所述源极与所述栅极之间的交叠区域。
  6. 根据权利要求4所述的像素结构，其中，所述交叠区域包括所述漏极与所述栅极之间的交叠区域。
  7. 根据权利要求4所述的像素结构，其中，所述源漏层还包括与所述源极相连的数据线，所述源极的宽度小于所述数据线的宽度。
  8. 根据权利要求7所述的像素结构，其中，所述薄膜晶体管的沟道长度为2微米～8微米。
  9. 根据权利要求8所述的像素结构，其中，所述薄膜晶体管的沟道长度为5微米。
  10. 根据权利要求7所述的像素结构，其中，所述源漏层还包括设置在所述源极与所述漏极之间且与所述源极和所述漏极分离的中间电极。
  11. 根据权利要求1-10任一所述的像素结构，其中，所述衬底基板还包括栅极绝缘层、有源层、保护层和像素电极。
  12. 根据权利要求11所述的像素结构，其中有源层由非晶硅、多晶硅或氧化物半导体材料制成。
  13. 一种阵列基板，包括权利要求1-12任一所述的像素结构。
  14. 一种显示装置，包括权利要求13所述的阵列基板。
  15. 一种制作权利要求1-12任一项所述的像素结构的方法，包括：
    在衬底基板上形成栅层；
    在所述栅层上形成栅极绝缘层、有源层和源漏层；
    在所述源漏层上形成保护层；
    在所述保护层上形成像素电极，
    其中，所述栅层与所述源漏层之间存在交叠区域，并且所述方法还包括在所述栅层和/或所述源漏层上形成位于所述交叠区域的镂空结构。
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CN205229635U (zh) 2015-12-18 2016-05-11 京东方科技集团股份有限公司 像素结构、阵列基板及显示装置
CN106252418B (zh) * 2016-09-22 2018-05-15 南京华东电子信息科技股份有限公司 一种薄膜晶体管
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