WO2017074047A1 - Substrat de transmission de lumière et procédé de fabrication associé - Google Patents

Substrat de transmission de lumière et procédé de fabrication associé Download PDF

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Publication number
WO2017074047A1
WO2017074047A1 PCT/KR2016/012136 KR2016012136W WO2017074047A1 WO 2017074047 A1 WO2017074047 A1 WO 2017074047A1 KR 2016012136 W KR2016012136 W KR 2016012136W WO 2017074047 A1 WO2017074047 A1 WO 2017074047A1
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Prior art keywords
transparent conductive
conductive layer
light
layer
substrate
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PCT/KR2016/012136
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English (en)
Korean (ko)
Inventor
유영조
손윤상
최윤수
박태헌
김다은
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덕산하이메탈(주)
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices

Definitions

  • the present invention relates to a light transmissive substrate and a method of manufacturing the same.
  • the present invention also relates to a display device, a lighting device, and the like to which a translucent substrate is applied.
  • the light transmissive substrate is a substrate including a transparent conductive layer having both electrical conductivity and light transparency.
  • the light transmissive substrate provided in the light emitting device is configured to minimize the loss of generated light.
  • an organic light-emitting diode OLED
  • Such translucent substrates include liquid crystal displays, electrochromic displays (ECDs), organic electroluminescent devices, solar cells, plasma display panels, flexible displays, electronic papers, It can be applied to display devices such as touch panels, lighting devices, or solar cells.
  • the light transmissive substrate includes a base substrate and a light transmissive electrode that performs an electrode function of a light emitting element attached to the substrate.
  • the translucent electrode is mainly formed in a thin film form using a conductive material such as tin-doped indium oxide (ITO) on a base substrate made of plastic, but recently, carbon that can replace ITO containing indium, which is an unstable supply and demand, is used.
  • ITO tin-doped indium oxide
  • CNT nanotubes
  • metal nanostructures etc.
  • the present invention provides a light extraction substrate including a transparent conductive layer having a structure that improves the light extraction efficiency, and an organic light emitting device using the same, without affecting the transmittance and electrical conductivity, and the light extraction substrate with improved light extraction efficiency It is to provide an organic light emitting device.
  • the present invention is a light transmissive substrate comprising a transparent conductive layer, the light transmissive substrate comprising: a base polymer layer made of a light transmissive material; And a first transparent conductive layer provided on the base polymer layer, wherein the first transparent conductive layer is formed with a plurality of zones which are divided by a crack, thereby forming a light-transmissive substrate having refraction of light incident from the crack. to provide.
  • the thickness (t) of the crack measured in the horizontal direction of the first transparent conductive layer provides a light transmissive substrate having a thickness of 100 nm to 20 ⁇ m.
  • the shortest length l of the area fractionated by the crack measured in the horizontal direction of the first transparent conductive layer provides a light transmissive substrate having a thickness of 100 ⁇ m to 2 mm.
  • the first transparent conductive layer has a thickness of 5nm to 100nm to provide a transparent substrate.
  • the first transparent conductive layer has an inclination to the side, the inclination angle between the horizontal surface of the first transparent conductive layer side and the base polymer layer provides a transparent substrate of 45 ° ⁇ 20 °.
  • the first transparent conductive layer provides a transparent substrate formed of any one or more layers selected from the group consisting of a transparent conductive oxide layer, a transparent conductive nitride layer, a transparent conductive sulfide layer, and a mixed layer thereof.
  • the light transmissive substrate further includes a second transparent conductive layer provided on the base polymer layer, the second transparent conductive layer including a conductor and a coating polymer covering the conductor, wherein the first transparent conductive layer is the second transparent layer.
  • a light transmissive substrate provided on a conductive layer.
  • the conductor of the second transparent conductive layer provides a light transmissive substrate including a metal nanowire, a metal mesh pattern or a conductive polymer.
  • the conductor is 60% or more in the A region. It provides a translucent substrate.
  • the metal nanowires are silver (Ag), gold (Au), copper (Cu), platinum (Pt), iron (Fe), nickel (Ni), cobalt (Co), zinc (Zn), titanium (Ti)
  • a light transmissive substrate formed of any one material selected from the group consisting of chromium (Cr), aluminum (Al), palladium (Pd), and combinations thereof is provided.
  • the metal mesh pattern provides a light-transmissive substrate that is a pattern formed in a cross shape using silver (Ag), copper (Cu), aluminum (Al), or an alloy thereof.
  • the conductor of the second transparent conductive layer further includes a metal particle, the metal particle provides a light-transmitting substrate that is distributed at least 50% in the A region.
  • the present invention also provides a light-transmissive substrate manufacturing step of manufacturing a light-transmissive substrate comprising a base polymer layer, a second transparent conductive layer and a first transparent conductive layer; It provides a method of manufacturing a light-transmitting substrate comprising a; crack forming step of forming a crack by applying a physical external force to the light-transmitting substrate.
  • the crack forming step provides a method of manufacturing a light transmissive substrate which is a step of forming a crack by applying a physical external force by bending the manufactured light transmissive substrate.
  • the crack forming step is to adjust the strength and position of the bending to provide a method of manufacturing a light-transmitting substrate that is formed so that the crack (crack) increases as the distribution toward the edge (edge) region of the first transparent conductive layer. do.
  • the light-transmissive substrate manufacturing step the first step of preparing a release layer; Forming a first transparent conductive layer on the release layer; Forming a second transparent conductive layer on the first transparent conductive layer; Forming a base polymer layer on the second transparent conductive layer; And a fourth step of separating the release layer and the first transparent conductive layer; preparing a light-transmissive substrate comprising a base polymer layer, a second transparent conductive layer, and a first transparent conductive layer. It provides a manufacturing method.
  • the present invention provides a lighting device comprising the light-transmitting substrate.
  • the present invention in another aspect, the present invention.
  • an organic light emitting layer provided between the light transmissive substrate and the reflective electrode.
  • the light transmissive substrate of the present invention comprises a plurality of zones fractionated by cracks, and includes a first transparent conductive layer in which refraction of light incident from the cracks is generated, without affecting the transmittance and electrical conductivity,
  • the improved light-transmissive substrate and an organic light emitting device including the same can be provided.
  • the light emitted to the side of the translucent substrate including the same or absorbed by the inner material and disappears hits the inclined surface of the edge and then causes total reflection to proceed toward the side or the top of the substrate to extract light. It can provide the effect that the efficiency is improved.
  • the light extraction efficiency can be increased.
  • the metal nanowires and the metal particles as the conductor of the second transparent conductive layer, the light extraction efficiency can be further increased by scattering the light.
  • the metal particles are provided with protrusions on the outer surface to have a wider range of wavelengths. It can scatter light.
  • FIG. 1 is a structural diagram of a first transparent conductive layer according to an embodiment of the present invention.
  • Figure 2 shows the schematic structure of the light extraction by the crack according to an embodiment of the present invention.
  • FIG 3 is a structural diagram of a second transparent conductive layer according to an embodiment of the present invention.
  • FIG. 4 shows a light transmissive substrate according to an embodiment of the present invention.
  • Figure 5 shows a light-transmissive substrate manufacturing step according to an embodiment of the present invention.
  • FIG. 6 shows a light extraction simulation structure of a crack structure according to an embodiment of the present invention.
  • FIG. 7 shows a light extraction efficiency measurement region of the organic light emitting device according to the embodiment of the present invention.
  • Figure 8 shows the light extraction simulation results of the crack structure according to an embodiment of the present invention.
  • FIG 9 shows the inclined structure of the first transparent conductive layer according to the embodiment of the present invention.
  • FIG. 10 shows a light extraction simulation result by the inclined structure according to an embodiment of the present invention.
  • Example 11 shows an optical microscope image of a light transmissive substrate prepared according to Example 1 of the present invention.
  • FIG. 12 shows a graph of sheet resistance measurement of the light transmissive substrate according to the embodiment of the present invention.
  • FIG. 13 shows transmittance measurement data and haze measurement data according to generation time of the light extraction layer of the light-transmissive substrate prepared in Example 1.
  • the light transmissive substrate 100 includes a base polymer layer 50 and a first transparent conductive layer 20 provided on the base polymer layer 50, and the first transparent material of the present invention.
  • the conductive layer 20 is divided into a plurality of zones 22 with the crack 21 as an interface, and when the generated light is incident on the light transmissive substrate, the crack 21 of the first transparent conductive layer 20 is caused.
  • a substrate in which refraction occurs it is a translucent substrate 100 which improves light extraction efficiency without affecting the transmittance and electrical conductivity.
  • a crack 21 present in at least one region of the first transparent conductive layer 20 is continuously or discontinuously empty in the first transparent conductive layer 20 as shown in FIG. 1. It means a gap, the first transparent conductive layer 20 is divided into a plurality of zones 22 with the crack 21 as an interface, the gap caused by the crack in the thickness direction of the first transparent conductive layer 20 It may or may not penetrate. That is, the first transparent conductive layer 20 is divided into several zones by the crack 21, and the size of each zone 22 is the shortest length l measured in the horizontal direction of the first transparent conductive layer 20. You can indicate the size through.
  • Figure 2 shows the schematic structure of the light extraction enhancement structure due to cracks.
  • the internal light loss reaches 60%, while in the transparent conductive layer containing cracks according to the present invention shown in FIG. Due to this has the effect of increasing the internal light extraction efficiency.
  • the translucent substrate 100 has a crack having a low refractive index (1 to 1.4) while the generated light passes through the first transparent conductive layer 20 having a relatively high refractive index (1.5 to 2.5). 21) to be totally reflected when contacted at an angle of more than the critical angle, and to increase the light extraction efficiency by forming a path through which the light can escape through the crack (21).
  • the thickness t of the crack 21 of the first transparent conductive layer 20 is 100 nm or more and 20 ⁇ m or less.
  • the thickness t of the crack 21 means the width of the crack space measured in the horizontal direction of the first transparent conductive layer 20. If the thickness t of the crack 21 is less than 100 nm, there is a problem in that the effect of light extraction is inferior, and if it is more than 20 ⁇ m, the contact point between the nanowires is reduced, thereby reducing the conductivity. More preferably, they are 100 nm or more and 5 micrometers or less.
  • the size of the plurality of zones 22 divided by the crack 21 of the first transparent conductive layer 20 may be measured as the shortest length l, and the first transparent conductive layer
  • the shortest length l of each zone 22 measured in the horizontal direction of 20 is the length of one side of the first transparent conductive layer 20, preferably 100 ⁇ m or more and 2 mm or less. If the shortest length (l) is less than 100 ⁇ m, there is a problem of deterioration of conductivity due to excessive cracking and driving of the device, and if it exceeds 2 mm, there is a problem of deterioration of light extraction function due to light extraction and cracking.
  • the crack 21 of the first transparent conductive layer 20 may be included in a form in which the distribution increases toward the edge region of the first transparent conductive layer 20.
  • the first transparent conductive layer 20 may have an edge region in which the shortest length l of the divided zone 22 is 100 ⁇ m or more and 2 mm or less.
  • the edge area refers to an area including a side including a circumference or an edge of the first transparent conductive layer 20. In the case where a large number of cracks 21 are present in the edge region, it is possible to prevent light from escaping to the edge region of the first transparent conductive layer 20 while preventing transmittance and electrical conductivity from deteriorating, thereby improving light extraction efficiency.
  • the first transparent conductive layer 20 may be formed to be inclined side. That is, the angle formed between the horizontal surface of the base polymer layer 50 and the side surface of the first transparent conductive layer 20 has an inclination angle ⁇ other than 90 °.
  • the side surface of the first transparent conductive layer 20 Since the side surface of the first transparent conductive layer 20 has an inclination, the light emitted to the side or absorbed by the inner material is totally reflected when it enters the inclined surface, thereby advancing the light toward the upper side of the substrate, thereby improving light extraction efficiency. It is effective to let.
  • the inclination angle between the side surfaces of the first transparent conductive layer 20 and the base polymer layer 50 is 45 ° ⁇ 20 °. Total reflection occurs with respect to the light incident on the side surface at an angle parallel to the horizontal plane of the transparent conductive layer within the above range, thereby resulting in the light extraction efficiency is the most excellent effect.
  • the first transparent conductive layer 20 is not limited as long as it is a transparent and conductive material.
  • the transparent conductive oxide layer, the transparent conductive nitride layer, and the transparent layer have excellent transparency, conductivity, and heat resistance. It is preferable to use a conductive sulfide layer and a mixed layer thereof. It is preferable to form using ITO (Indium Tin Oxide), ZnO (Zinc Oxide), SnO 2 (Tin Oxide) and the like, more preferably doped with F, Al, Ga, In, Si, etc. It is good to form.
  • the thickness of the first transparent conductive layer 20 according to an embodiment of the present invention is 5nm to 100nm. If it is less than 5nm, there is a problem of low electrical conductivity, if it exceeds 100nm there is a problem that the flexibility is lowered.
  • the translucent substrate 100 may further include a second transparent conductive layer 30 provided between the base polymer layer 50 and the first transparent conductive layer 20. That is, the base polymer layer 50, the second transparent conductive layer 30 provided on the base polymer layer 50, and the first transparent conductive layer 20 provided on the second transparent conductive layer 30 are included. do.
  • the second transparent conductive layer 30 includes a conductor 31 connected to the first transparent conductive layer 20 and a coating polymer 32 covering the conductor 31.
  • the second transparent conductive layer 30 has a half adjacent to the first transparent conductive layer 20 is referred to as an A region, and a half adjacent to the base polymer layer 50 is referred to as a B region. 60% or more of the conductors 31 are formed in the A region.
  • the region B means a half adjacent to the light extraction layer 40. More preferably, it may be formed to be distributed in 70% or 80% or more according to the manufacturing characteristics of the second transparent conductive layer 30.
  • the second transparent conductive layer 30 is a layer that can compensate for the permeability and electrical conductivity that may be degraded by the crack 21 of the first transparent conductive layer 20, and the conductor 31 is made of metal.
  • the nanowire 311 may be a metal mesh pattern 312 or the conductive polymer 313.
  • FIG. 4 illustrates a light transmissive substrate 100 including a light extraction enhancement structure due to the crack 21 and a second transparent conductive layer 30 (including metal nanowires and metal particles).
  • the crack 21 may be formed to degrade the electrical conductivity of the first transparent conductive layer 20, but the metal of the second transparent conductive layer 30 formed on the first transparent conductive layer 20 may be reduced.
  • the electrical connection through the nanowire 311 it is possible to maintain the electrical conductivity of the light-transmissive substrate 100.
  • the metal nanowire 311 refers to a nano-sized structure having electrical conductivity.
  • the light extraction efficiency may be improved by the surface magnetic field due to the surface plasmon effect of the metal nanowires.
  • Metal nanowires have an average diameter of 20 nm to 80 nm and a length of 10 ⁇ m to 80 ⁇ m. If it is less than the size range there is a problem that the electrical conductivity is lowered, if it is exceeded there is a problem that the yield is lowered.
  • the second transparent conductive layer 30 may further include, as the conductor 31, metal particles 314 in addition to the metal nanowires 311.
  • the metal particles 314 may further include protrusions on an outer surface thereof.
  • the metal particles 314 have a size of 100 to 1000 nm. If it is less than 100nm, there is a problem that the scattering characteristics are lowered, if it exceeds 1000nm there is a problem of transmittance loss.
  • the metal particles 314 are not limited in shape, such as spherical, elliptical, and amorphous, and have protrusions on their outer surfaces. A plurality of particles may overlap each other and be formed in a multilayer.
  • the size of the protrusion provided on the outer surface of the metal particle 314 is 10 to 300nm. If it is less than 10nm there is a problem of light scattering degradation, if it exceeds 300nm there is a problem of transmittance loss.
  • the metal particles 314 are formed to be distributed at least 50% in the A region of the second transparent conductive layer 30. More preferably, it may be formed to be distributed in 60% or 70% or more according to the manufacturing characteristics of the second transparent conductive layer 30.
  • the metal of the metal nanowires 311 and the metal particles 314 may be any conductive material. More typically, silver (Ag), gold (Au), copper (Cu), platinum (Pt), iron (Fe), nickel (Ni), cobalt (Co), zinc (Zn), titanium (Ti), chromium And those selected from the group consisting of (Cr), aluminum (Al), palladium (Pd), and combinations thereof.
  • silver (Ag) is used.
  • Silver (Ag) reflects light as a metal and has a low transmittance but reflects light to each other in correspondence with the reflective electrode 300 (for example, aluminum (Al) metal electrode) in the organic light emitting diode 1000. This is because the optical loss inside the device is reduced.
  • the thickness of the second transparent conductive layer 30 including metal nanowires and metal particles having protrusions on the outer surface thereof is 100 nm to 10 ⁇ m. If it is less than 100nm, there is a problem of lowering the conductivity, and if it exceeds 10 ⁇ m, there is a problem of loss of transmittance.
  • the metal particles may have projections on the outer surface to scatter light having a wider band.
  • the metal mesh pattern 312 is formed of a pattern having various line widths and various cross shapes using metal, and the metal mesh pattern 312 is formed of silver (Ag). ), But may be a layer formed in a pattern orthogonal form using copper (Cu), aluminum (Al), alloys, etc., but is not limited thereto, and various line widths and patterns according to the requirements of the appropriate haze value and permeability of the device used It can be formed as.
  • the metal mesh pattern 312 is formed to have a line width of 100 nm to 10 ⁇ m to exhibit a haze value of about 30 to 80% and a transmittance of about 70 to 90%. It is preferable.
  • the conductive polymer 313 is made of polyethylene dioxythiophene / polystyrene sulfonic acid (Poly Ethylene Di Oxy Thiophene / Poly Styrene Sulfonate, PEDOT / PSS), polyimide (Polyimide, PI), polyethylene terephthalate (PET), polytetrafluoroethylene (Poly Tetra Fluoro Ethylene, PTFE) or a layer formed using a UV resin (UV resin) using a polymer or the like.
  • the thickness of the conductive polymer 313 layer is preferably 300nm to 5 ⁇ m. If less than 300nm, there is a problem of lowering device life due to poor moisture permeability, and if it exceeds 5 ⁇ m, there is a problem of lowering light transmittance.
  • the light transmissive substrate 100 may further include a light extraction layer 40 provided between the second transparent conductive layer 30 and the base polymer layer 50.
  • the light extraction layer 40 is capable of light extraction, and can complement the second transparent conductive layer 30 having a function of a conductor mainly in terms of function, and the metal nanowires included in the second transparent conductive layer 30 or Since the metal particles are impregnated or coated by the light extraction layer 40, the problem of deterioration in reliability caused by sulfation and oxidation between the metal nanowires or the metal particles may be solved.
  • the light extraction layer 40 may be a layer coated with an oxide, nitride, or sulfide of a metal, and may be a layer in which scattering particles 41 having an average diameter of 50 to 300 nm are inserted. In addition, they may be a layer coated with oxides, nitrides, sulfides, etc. of the metals in which they are complex, and also scattering particles inserted therein.
  • the light extraction layer 40 may have a protrusion shape or a pattern shape, the thickness is 100nm to 600nm. If it is less than 100nm there is a problem of low light scattering effect, if it is more than 600nm there is a problem of light transmittance reduction. More preferably, it is 100-300 nm.
  • An organic light emitting device 1000 according to an embodiment of the present invention, the light-transmitting substrate 100 according to an embodiment of the present invention; A reflective electrode 300 facing the light transmissive substrate 100; And an organic light emitting layer 200 provided between the light transmissive substrate 100 and the reflective electrode 300.
  • the organic light emitting layer 200 is provided between the transparent substrate 100 and the reflective electrode 300 serving as a transparent electrode, and emits light by electric driving of the transparent substrate 100 and the reflective electrode 300.
  • the organic light emitting layer 200 may include a light emitting layer, and may have a stacked structure further including at least one selected from a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
  • a material capable of forming the light emitting layer a material capable of emitting light in the visible region by transporting and combining holes and electrons from the hole transporting layer and the electron transporting layer, respectively, is preferably a material having good quantum efficiency for fluorescence or phosphorescence.
  • the reflective electrode 300 may be formed of an alkali metal, an alkaline earth metal and a metal of the third genus of the periodic table, ie, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or an alloy thereof. It may be formed as, but is not limited thereto.
  • the organic light emitting device used for the illumination is more important, the light extraction efficiency is more important, using the light-transmitting substrate according to the present invention as a transparent electrode can improve the light extraction efficiency without affecting the transmittance and electrical conductivity, cracks It is to provide an organic light emitting device that can prevent a decrease in electrical conductivity that can be caused by having.
  • the organic light emitting device may include a plurality of mesa structures in a stacked form including cracks in the organic light emitting layer and the reflective electrode layer as well as the transparent conductive layer.
  • Each mesa structure may have a form in which a transparent conductive layer, an organic light emitting layer, and a reflective electrode layer are stacked.
  • Method for manufacturing a light transmissive substrate 100 is a light transmissive substrate 100 including a base polymer layer 50, a second transparent conductive layer 30 and a first transparent conductive layer 20 ) Is a light-transmitting substrate manufacturing step (S10) and a crack forming step (S20) to form a crack (41) by applying a physical external force to the prepared light-transmissive substrate (100).
  • Translucent substrate manufacturing step (S10) is a first step of preparing the release layer 10, step 2-1 to form the first transparent conductive layer 20 on the prepared release layer 10, the first transparent conductive formed Step 2-2 of forming the second transparent conductive layer 30 on the layer 40, the third step of forming the base polymer layer 50 on the formed second transparent conductive layer 30 and the release layer ( 10) and a fourth step of separating the first transparent conductive layer 20.
  • the first transparent conductive layer 20 is formed on the release layer (substrate or buffer layer) 10 and the second transparent conductive layer 30 is formed through the light-transmissive substrate manufacturing step (S10). While forming the conductive layer 20, it is easy to separate from the substrate, and the flexible light-transmissive substrate 100 can be manufactured that can be simplified and reduced in cost.
  • the first step is to prepare a release layer 10 that can be easily separated from the first transparent conductive layer 20, the release layer 10 is composed of the substrate 11 or the buffer layer 12 on the substrate It can be configured as.
  • the substrate may be a Teflon (polytetrafluoroetylene) substrate, Bulk PMMA (Polymethyl methacrylate), etc.
  • Teflon polytetrafluoroetylene
  • Bulk PMMA Polymethyl methacrylate
  • each step is roll-to-roll to Roll) to improve productivity, reliability and economics.
  • Teflon polytetrafluoroetylene
  • the substrate itself may be used as the release layer 10 without having a separate buffer layer 12.
  • the buffer layer 12 is a layer formed using various kinds of carbon compounds and metal oxides, and may be formed using any one or more selected from the group consisting of a first carbon compound, a second carbon compound, and a metal oxide.
  • the first carbon compound includes a carbon compound having a glass transition temperature (Tg) of 200 ° C. or less
  • the second carbon compound includes a carbon compound decomposed by ultraviolet rays
  • the metal oxide includes a metal oxide having low surface tack.
  • the first carbon compound is composed of PC (Polycarbonate), PMMA (Polymethyl methacrylate) PTFE (Polytetrafluoroethylene), Polyvinylchloride (PVC), Polystyrene (PS) and Polyethyl methacrylate (PEMA) among carbon compounds having a glass transition temperature (Tg) of 200 ° C or less. It is preferable to include any one or more selected from the group to be. More preferably, the use of a carbon compound having a glass transition temperature (Tg) of 100 to 150 ° C., PMMA (polymethylmethacrylate), or PTFE (polytetrafluoroethylene) may lower the surface adhesion at the interface forming the buffer layer 12.
  • PC Polycarbonate
  • PMMA Polymethyl methacrylate
  • PTFE Polytetrafluoroethylene
  • PVC Polyvinylchloride
  • PS Polystyrene
  • PEMA Polyethyl methacrylate
  • the buffer layer 12 includes a first carbon compound having a glass transition temperature (Tg) of 200 ° C. or less. It is good to change the nature and shape of the buffer layer 12. If the glass transition temperature exceeds 200 °C there is a problem that a relatively high temperature and time is required during curing. In addition, materials with low glass transition temperature are suitable for process price and yield during roll-to-roll and continuous process.
  • Tg glass transition temperature
  • the second carbon compound preferably includes any one or more selected from the group consisting of metal ion polymers, vinyl-ketone copolymers, and Ethylene-CO copolymers among carbon compounds decomposed by ultraviolet rays.
  • the buffer layer 12 includes a second carbon compound decomposed by ultraviolet light, and thus, the first layer can be easily processed by a simple process. There is an advantage in that the transparent conductive layer 20 can be separated.
  • Metal oxides have the advantage of easy control of surface tension and surface energy by atoms substituted at the interface, and easy control by UV / ozone and plasma treatment methods. Thereby, the adhesiveness and adhesiveness of an interface can be adjusted and the characteristic which can transfer easily a different material is shown.
  • Metal oxides are thermodynamically very stable materials up to 2000 ° C in almost all low-adhesive atmospheres.
  • the buffer layer 12 may form a concave or convex surface pattern on a surface of the buffer layer 12 in contact with the first transparent conductive layer 20.
  • the first transparent conductive layer 20 of the light transmissive substrate 100 finally transferred through the fourth step of the method for manufacturing a light transmissive substrate S10 according to an embodiment of the present invention by adjusting the surface shape when the buffer layer 12 is formed.
  • the surface shape of can be controlled. For example, when a wave pattern is formed in the buffer layer to stack and separate the first transparent conductive layer 20 or the like, the wave pattern is transferred to the first transparent conductive layer 20.
  • the organic light emitting device When the organic light emitting device is manufactured by stacking a light emitting layer and a reflective electrode on a light transmissive substrate 100 including a transparent conductive layer having a concave or convex surface pattern on its surface, the surface roughness is increased to increase the light emitting area. In addition, it can provide an effect of increasing the luminous efficiency by acting as a light extraction. In addition, in the case of manufacturing an organic solar cell by stacking a photoactive layer and a metal electrode on the light-transmissive substrate 100, it is possible to increase the light receiving area of the sunlight and also provide a light collecting role to increase the power generation efficiency. .
  • the thickness of the buffer layer 12 is preferably formed to 100nm to 10 ⁇ m.
  • the buffer layer 12 is formed below 100 nm, chemical corrosion resistance and surface uniformity are unstable, and when the buffer layer 12 is formed above 10 ⁇ m, the surface pattern and curing time are prolonged, thereby causing a process problem. More preferably, it is 400 nm-600 nm.
  • the first step of the light-transmissive substrate manufacturing step (S10) is to spin-coating using a buffer solution or to form a separate sheet of the buffer layer 12 to adhere to form a hydrophilic buffer layer on the substrate
  • the buffer layer 12 may be formed by coating and heat treatment using a buffer solution in a roll-to-roll process, and the surface shape may be adjusted.
  • Step 2-1 of the step of manufacturing a light-transmissive substrate according to an embodiment of the present invention is a step of forming a first transparent conductive layer 20 on the release layer 10, ITO (Indium Tin Oxide), It may be formed using one or more selected from ZnO (Zinc Oxide) and SnO 2 (Tin Oxide) and a solid solution thereof, and using the doped with F, Al, Ga, In, Si, etc.
  • the transparent conductive layer 20 can be formed.
  • the thickness of the first transparent conductive layer 20 is preferably formed in 5nm to 100nm. If the thickness is less than 5nm, there is a problem in that the crystallinity of the thin film is inferior, and if the thickness is formed over 100nm, there is a problem in that surface cracks occur when folding or bending due to a decrease in flexibility. More preferably, it is 5 nm-20 nm.
  • the first transparent conductive layer 20 is formed on the buffer layer 12 by using spin coating
  • the flexible substrate may be formed through deposition on a roll-to-roll process, but is not limited thereto.
  • Transmissive substrate manufacturing step (S10) includes a step 2-2 to form a second transparent conductive layer 30 on the first transparent conductive layer 20 as shown in FIG.
  • the flexible light-transmissive substrate 100 including the first transparent conductive layer 20, the second transparent conductive layer 30, and the base polymer layer 50 may be manufactured.
  • Transmissive substrate manufacturing step (S10) after forming the first transparent conductive layer 20 on the buffer layer 12 by forming a second transparent conductive layer 30, the first transparent conductive layer Since the conductor 31 is connected to the 20, a process of manufacturing the light transmissive substrate 100 having excellent electric conductivity and light scattering effect can be provided.
  • the second to second step of the light-transmissive substrate manufacturing step (S10) is an ink composition comprising a metal nanowire 311 or metal particles 314 on a roll-to-roll process when using a flexible substrate Coating and drying to form a metal nanowire layer, or using a spin coating to form a second transparent conductive layer 30 on the first transparent conductive layer 40, photolithography, etc.
  • the second transparent conductive layer 30 may be formed using, but is not limited thereto.
  • the first transparent conductive layer 20 is formed on the release layer 10 and the second transparent conductive layer 20 is sequentially formed on the light-transmissive substrate manufacturing step S10 according to an embodiment of the present invention.
  • the transparent conductive layer 30 since the metal nanowires 311 and the metal particles 314 of the second transparent conductive layer 30 are located closer to the first transparent conductive layer 20 by gravity. It is possible to provide a light transmissive substrate having improved electrical conductivity and excellent light extraction efficiency.
  • the thickness of the second transparent conductive layer 30 is 40 nm to 150 nm. If it is less than 40nm, there is a problem of lowering the conductivity, and if it exceeds 150nm, there is a problem of loss of transmittance.
  • the metal particles 314 may have projections on the outer surface to scatter light having a wider band.
  • the adhesion to the transparent conductive oxide layer on which the second transparent conductive layer 30 is formed can be improved.
  • Transmissive substrate manufacturing step (S10) further comprises a second to third step of forming a light extraction layer on the second transparent conductive layer, the first transparent conductive layer 20, the second
  • the light transmissive substrate 100 including the transparent conductive layer 30, the light extraction layer 40, and the base polymer layer 50 may be manufactured.
  • the light extraction layer 40 is formed on the second transparent conductive layer 30 by using spin coating.
  • an ink composition including an oxide, a nitride, a sulfide, or a mixture of metals may be applied and heat treated in a roll-to-roll process, but is not limited thereto.
  • the third step of the light-transmissive substrate manufacturing step (S10) is the step of forming a base polymer layer 50 on the first transparent conductive layer 20, the second transparent conductive layer 30
  • a flexible and transparent substrate may be manufactured through a roll to roll process that is more simplified and lower in cost.
  • the base polymer layer 50 may be formed of polyimide (PI), polyethylene terephthalate (PET), polycarbonate (PC), polyether sulfone (PES), polyethylene naphthalate (PEN), poly acrylate (PA), polyurethane acrylate (PUA), and PDMS (PDMS). polydimethyl siloxane) and a metal thin film. It is preferable to form using PI which is excellent in chemical resistance, heat resistance, etc.
  • the base polymer layer 50 may have a thickness of 50 ⁇ m to 3 mm. In the case of forming less than 0.7mm, there is a problem in that the bearing capacity is low as the mother substrate, and in the case of forming more than 3mm, flexibility is reduced. More preferably, it is 200 micrometers-1.5 mm.
  • the third step of the light-transmitting substrate manufacturing step (S10) is the laminating (laminating) using a polymer solution or after applying the polymer composition, drying and curing or screen printing (screen printing) To form the base polymer layer 50, or when using a flexible substrate can be formed by applying the polymer composition and heat treatment in a roll-to-roll process, but is not limited thereto.
  • a fourth step of manufacturing a transparent substrate according to an embodiment of the present invention is a step of detaching the release layer 10, between the release layer 10 and the first transparent conductive layer 20. Separating (transferring) to provide a flexible light-transmitting substrate 100 including the first transparent conductive layer 20, the second transparent conductive layer 30 and the base polymer layer (50).
  • the buffer layer 12 when the buffer layer 12 is formed to have a shape on the surface and the first transparent conductive layer 20 is transferred, the buffer layer 12 may be formed on the surface of the first transparent conductive layer 20 like the surface of the buffer layer 12. Since the shape is transferred, the shape of the surface of the manufactured flexible light-transmitting substrate 100 may be controlled.
  • the first transparent conductive layer 20 by selectively changing the properties of the release layer 10 (buffer layer) by irradiation with light through a light source.
  • the buffer layer 12 is a material such as the first carbon compound, the second carbon compound, and the metal oxide mentioned above, that is, the carbon compound having a glass transition temperature of 200 ° C. or less, and the carbon compound decomposed by ultraviolet rays. Because it is formed using a metal oxide, there is an advantage that it can be easily separated (transferred) without undergoing a complicated process or using a lot of energy.
  • a xenon lamp As a light source that can be used for the light irradiation treatment, a xenon lamp, a halogen lamp, a HID lamp, a fluorescent lamp, a gas discharge lamp including a mercury lamp, and the like may be used. Any heat source that can change the temperature can be used without limitation.
  • the use of xenon lamps is good for local energy transfer to form the light extraction layer without damaging the transparent conductive oxide layer and other materials.
  • a fifth step of removing the release layer 10 components remaining in the separated first transparent conductive layer 20 may further include.
  • the buffer layer 12 remaining on the surface of the transparent substrate including the separated first transparent conductive layer 20 may be removed by washing or plasma treatment using chemicals such as acetone and ethanol.
  • a crack 21 is formed in the first transparent conductive layer 20 by applying a physical external force to the transparent substrate 100.
  • the crack forming step S20 may form a crack 21 according to the bending strength and the bending position by applying a physical external force by bending the light transmissive substrate 100.
  • the size of the cracks 21 for each region of the first transparent conductive layer 40 may be differently adjusted by adjusting the bending position and the bending strength.
  • the crack forming step (S20) may be formed such that the distribution increases as the cracks 21 (crack) toward the edge region of the transparent conductive layer by adjusting the bending position and the bending strength. More specifically, the shortest length l of the section fractionated by the crack 21 in the central region formed by increasing the bending strength from the central region to the edge region of the transparent conductive layer is 40 to 300 nm. The cracks 21 can be formed such that the shortest length l of the section fractionated by the cracks 21 is 40 to 100 nm.
  • the crack forming step S20 may be performed after the organic light emitting layer 200 and the reflective electrode layer 300 are formed on the light transmitting substrate 100 manufactured through the light transmitting substrate manufacturing step S10. That is, when the organic light emitting device 1000 is formed by forming the organic light emitting layer 200 and the reflective electrode layer 300 on the transparent conductive layer of the light transmissive substrate 100 and then forming a crack 21 by applying a physical external force, According to the strength of the external force, not only the transparent conductive layer but also the organic light emitting layer 200 or the reflective electrode layer 300 may form a crack 21.
  • the light extraction efficiency of the organic light emitting device having an inclination angle of 45 ° as shown in FIG. 9 is shown to improve the light extraction efficiency of the structure having the inclination at the edge of the organic light emitting device including the first transparent conductive layer. Calculated.
  • the simulation results indicate that the light emitted from the side of the organic light emitting device or absorbed by the internal material disappears after hitting the inclined surface of the edge, causing total reflection to proceed toward the side or the top of the substrate, thereby improving light extraction efficiency.
  • an organic light emitting layer having a light emitting area of 2 ⁇ 2 mm 2 was manufactured by sequentially stacking an organic light emitting layer and a reflective electrode on a light transmissive substrate including a first transparent conductive layer, a second transparent conductive layer, and a base polymer layer. It was.
  • the reflective electrode was formed using aluminum (Al), and the organic light emitting layer was formed of a material commonly used in the field of manufacturing white organic electronic devices, and a method of forming the organic light emitting layer was also used.
  • FIG. 11 shows an optical microscope image of a light transmissive substrate prepared according to Example 1.
  • the electrical conductivity was measured by measuring the surface resistance of the organic light emitting diodes manufactured in Examples and Comparative Examples, using a 4-point probe (device name: MCP-T610, manufacturer: MITSUBISHI CHEMICAL) which is commonly used in measuring surface resistance. It was measured using an ESP type probe having an interval between pins of 5 mm.
  • Example 12 is a light transmissive substrate (Comparative Example 1) containing only the first transparent conductive layer without cracks, a light transmissive substrate (Example 8) containing AgNW as the first transparent conductive layer without cracks and the second transparent conductive layer, and a cracked agent
  • a transparent substrate comprising AgNW as a transparent conductive layer and a second transparent conductive layer (Example 1), a first transparent conductive layer with cracks, and a transparent substrate including an AgNW layer as a second transparent conductive layer and a ZnO light extracting layer ( The sheet resistance measurement graph of Example 9) is shown.
  • the sheet resistance was measured to be about 240 ( ⁇ / ⁇ ), and in Example 8 coated with AgNW, the sheet resistance was reduced to 17 ( ⁇ / ⁇ ), and the crack-containing agent 1 It can be seen that in the case of Example 1 and Example 9 using a transparent conductive layer, the sheet resistance is maintained at a similar level.
  • Transmittance of the organic light emitting diodes manufactured in Examples and Comparative Examples was measured using a UV / Vis spectrometer.
  • FIG. 13 shows transmittance measurement data and haze measurement data according to generation time of the light extraction layer of the light-transmissive substrate prepared in Example 1.
  • FIG. The haze value tends to increase with the generation time of the light extraction layer, and the light extraction efficiency shows the combined effect of the light extraction layer and the crack.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Electroluminescent Light Sources (AREA)
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Abstract

La présente invention concerne un substrat de transmission de lumière comprenant : une couche de polymère de base constituée d'un matériau de transmission de lumière ; et une première couche conductrice transparente disposée sur la couche de polymère de base, la première couche conductrice transparente comportant une pluralité de partitions séparées par des fissures, de sorte que de la lumière incidente soit réfractée au niveau des fissures, et la présente invention permet d'obtenir un substrat de transmission de lumière et une diode électroluminescente organique ayant une efficacité d'extraction de lumière améliorée sans affecter la transmissivité ni la conductivité électrique.
PCT/KR2016/012136 2015-10-28 2016-10-27 Substrat de transmission de lumière et procédé de fabrication associé WO2017074047A1 (fr)

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