WO2017063176A1 - Photovoltaic conversion module - Google Patents

Photovoltaic conversion module Download PDF

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Publication number
WO2017063176A1
WO2017063176A1 PCT/CN2015/092030 CN2015092030W WO2017063176A1 WO 2017063176 A1 WO2017063176 A1 WO 2017063176A1 CN 2015092030 W CN2015092030 W CN 2015092030W WO 2017063176 A1 WO2017063176 A1 WO 2017063176A1
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WO
WIPO (PCT)
Prior art keywords
layer
photovoltaic conversion
electrically insulating
substrate
insulating layer
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PCT/CN2015/092030
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French (fr)
Chinese (zh)
Inventor
陈智勇
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友达光电股份有限公司
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Publication of WO2017063176A1 publication Critical patent/WO2017063176A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a photovoltaic conversion module.
  • the solar module it is mainly composed of a plurality of photovoltaic conversion devices, and is fixed by a packaging material.
  • the manner in which the packaging material is configured or assembled in the solar module is also related to the power generation efficiency of the solar module.
  • packaging materials can have a negative impact on photovoltaic converters.
  • how to reduce the negative impact of packaging materials on photovoltaic converters has become an important issue in related fields.
  • An embodiment of the invention provides a photovoltaic conversion module.
  • the photovoltaic conversion module comprises an isolation structure layer, wherein the isolation structure layer can block the metal ion migration path of the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the photovoltaic conversion element from being generated by the migration of sodium ions (Na + ) to the surface thereof.
  • the carrier (electron-hole pair) composite phenomenon which in turn reduces the power loss of the photovoltaic converter module.
  • An embodiment of the present invention provides a photovoltaic conversion module including a back sheet, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer, and a light transmissive glass.
  • the photovoltaic conversion element is disposed on the backboard.
  • the isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate and a first electrically insulating layer.
  • the first electrically insulating layer is disposed on the substrate.
  • the first encapsulating material layer is disposed on the isolation structure layer.
  • the light transmissive glass is disposed on the first encapsulating material layer.
  • the isolation structure layer further comprises a first buffer layer.
  • the first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer.
  • the refractive index of the first buffer layer is between the refractive index of the substrate and the refractive index of the first electrically insulating layer.
  • the first electrically insulating layer has a refractive index of N1
  • the first buffer layer has a refractive index of N2
  • the substrate has a refractive index of N3, and N1>N2>N3.
  • the photovoltaic conversion module further includes a second encapsulation material layer and a third encapsulation material layer.
  • the second encapsulating material layer is disposed between the backing plate and the photovoltaic conversion element.
  • the third encapsulating material layer is disposed between the photovoltaic conversion element and the isolation structure layer, wherein the photovoltaic conversion element is coated between the second encapsulation material layer and the third encapsulation material layer.
  • the isolation structure layer further includes a first buffer layer, a second electrical insulation layer, and a second buffer layer.
  • the first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer.
  • the second electrically insulating layer is disposed on a side of the substrate opposite to the first electrically insulating layer.
  • the second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between the lattice constant of the substrate and a lattice constant of the second electrically insulating layer.
  • the material of the first electrically insulating layer comprises a ceramic, an oxide, or a combination thereof, wherein the oxide comprises magnesium aluminum oxide (MgAl 2 O 4 ).
  • An embodiment of the present invention provides a photovoltaic conversion module including a back sheet, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer, and a light transmissive glass.
  • the photovoltaic conversion element is disposed on the backboard.
  • the isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate, a first electrically insulating layer and a first buffer layer.
  • the first electrically insulating layer is disposed on the substrate.
  • the first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer.
  • the first encapsulating material layer is disposed on the isolation structure layer.
  • the light transmissive glass is disposed on the first encapsulating material layer.
  • the first electrically insulating layer has a refractive index of N1
  • the first buffer layer has a refractive index of N2
  • the substrate has a refractive index of N3, and N1>N2>N3.
  • the isolation structure layer further comprises:
  • a second electrically insulating layer disposed on a side of the substrate opposite the first electrically insulating layer
  • a second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between a lattice constant of the substrate and a lattice constant of the second electrically insulating layer between.
  • FIG. 1A is a schematic cross-sectional view of a photovoltaic conversion module according to a first embodiment of the present invention.
  • FIG. 1B is an enlarged schematic view of a region A of FIG. 1A.
  • FIG. 2 is a cross-sectional view showing a photovoltaic conversion module according to a second embodiment of the present invention.
  • FIG 3 is a cross-sectional view showing a photovoltaic conversion module according to a third embodiment of the present invention.
  • an embodiment of the present invention provides a photovoltaic conversion module including an isolation structure layer, wherein the isolation structure layer can block the self-transmissive glass to the photovoltaic conversion element through the insulating layer therein
  • the metal ion migration path prevents the photoconductor (electron-hole pair) composite phenomenon of the photovoltaic conversion element due to the migration of sodium ions (Na + ) to its surface, thereby reducing the power loss of the photovoltaic conversion module.
  • FIG. 1A is a schematic cross-sectional view of a photovoltaic conversion module 100 according to a first embodiment of the present invention.
  • FIG. 1B is an enlarged schematic view of a region A of FIG. 1A.
  • the photovoltaic conversion module 100 includes a backing plate 101, a photovoltaic conversion element 108, a solder ribbon 109, an isolation structure layer 110, a first encapsulation material layer 104, a second encapsulation material layer 106, a third encapsulation material layer 107, and a light transmissive glass 102, wherein
  • the photovoltaic conversion element 108 can be a solar cell, a solar power plant, or other device that converts light energy into electrical energy.
  • FIG. 1A shows a broken line L between the second encapsulating material layer 106 and the third encapsulating material layer 107.
  • the photovoltaic conversion elements 108 are disposed on the backplane and electrically coupled to each other. Solder strips 109 are disposed between adjacent photovoltaic conversion elements 108 to connect the plurality of photovoltaic conversion elements 108 in series.
  • the isolation structure layer 110 is disposed over the photovoltaic conversion element 108 and includes a substrate 112 and a first electrically insulating layer 114.
  • the first electrically insulating layer 114 has electrical insulating properties and is disposed on the substrate 112.
  • the first encapsulation material layer 104 is disposed on the isolation structure layer 110.
  • the light transmissive glass 102 is disposed on the first encapsulating material layer 104.
  • the second encapsulating material layer 106 is disposed between the back plate 101 and the photovoltaic conversion element 108.
  • the third encapsulating material layer 107 is disposed between the photovoltaic conversion element 108 and the isolation structure layer 110, wherein the photovoltaic conversion element 108 is coated between the second encapsulation material layer 106 and the third encapsulation material layer 107, that is, coated At the location of the dashed line L, the photovoltaic conversion element 108 is secured within the photovoltaic conversion module 100.
  • the material of the first encapsulating material layer 104, the second encapsulating material layer 106 and the third encapsulating material layer 107 may be composed of ethylene vinyl acetate (EVA) or ethylene vinyl acetate.
  • the isolation structure layer 110 can block or reduce the positive ion migration path between the first encapsulation material layer 104 and the photovoltaic conversion element 108, such as blocking sodium ions, by the electrical insulation properties of the first electrically insulating layer 114 (
  • the migration path of Na + ) is to prevent or reduce the phenomenon of carrier recombination of the photovoltaic conversion element 108 due to sodium ions (Na + ) migrating from the light-transmissive glass 102 to the surface via the first encapsulating material layer 104. For example, as shown in FIG.
  • the first encapsulating material layer 104 when moisture enters the first encapsulating material layer 104, the first encapsulating material layer 104 generates negative ions 124 due to the hydrolysis reaction (eg, the EVA material in the first encapsulating material layer 104).
  • the negatively charged acetate ion group is generated by the hydrolysis reaction, and the negative ions 124 generated by the hydrolysis cause the light-transmitting glass 102 composed of glass to have the possibility of precipitation of the positive ions 122 (for example, the glass material in the light-transmitting glass 102 will Positively charged sodium ions are precipitated due to acetate ion groups).
  • the positive ions 122 are attracted by the negative ions 124, causing the positive ions 122 to travel in the direction of the photovoltaic conversion element 108. Since the isolation structure layer 110 is located between the first encapsulation material layer 104 and the photovoltaic conversion element 108, the isolation structure layer 110 can block the positive ions 122 from traveling to the photovoltaic conversion element 108 to prevent the photovoltaic conversion element 108 from traveling to the positive ions 122. The surface thereof generates a carrier (electron-hole pair) composite phenomenon, whereby the power loss of the photovoltaic conversion module 100 can be effectively reduced.
  • the isolation structure layer 110 can provide an inhibitory effect on the migration of metal ions to effectively prevent the carrier recombination phenomenon of the photovoltaic conversion element 108 due to the migration of sodium ions to the surface thereof.
  • the power loss of the photovoltaic conversion module 100 can be effectively reduced.
  • the first electrically insulating layer 114 can be formed on the substrate 112 by means of physical vapor deposition (PVD), such as sputtering deposition, wherein the material of the first electrically insulating layer 114 It can be inorganic. Further, the material of the first electrically insulating layer 114 may be/contain a ceramic, an oxide or a combination thereof, wherein the oxide may be/contain a highly stable oxide material, such as magnesium aluminum oxide (MgAl 2 O 4 ) ). The material of the substrate 112 may be ethylene tetrafluoroethylene (ETFE).
  • PVD physical vapor deposition
  • sputtering deposition such as sputtering deposition
  • the material of the first electrically insulating layer 114 It can be inorganic.
  • the material of the first electrically insulating layer 114 may be/contain a ceramic, an oxide or a combination thereof, wherein the oxide may be/contain a highly stable oxide
  • the refractive index of the first electrically insulating layer 114 is greater than the refractive index of the substrate 112.
  • the refractive index of the first electrically insulating layer 114 is 1.71
  • the refractive index of the substrate 112 is 1.59.
  • the substrate 112 in the isolation structure layer 110 faces the back plate 101
  • the first electrically insulating layer 114 in the isolation structure layer 110 faces the light transmissive glass 102 .
  • the orientation of the substrate 112 and the first electrically insulating layer 114 in the isolation structure layer 110 depicted in FIG. 1A is merely illustrative, and is not intended to limit the present invention, and may be The orientation of the substrate 112 and the first electrically insulating layer 114 is elastically selected according to actual needs.
  • the substrate 112 in the isolation structure layer 110 may face the light transmissive glass 102
  • the first electrically insulating layer 114 in the isolation structure layer 110 faces the back plate 101.
  • the isolation structure layer 110 of the present embodiment further includes the first buffer layer 116.
  • the first buffer layer 116 is disposed between the substrate 112 and the first electrically insulating layer 114, wherein a lattice constant of the first buffer layer 116 is between the lattice constant of the substrate 112 and the lattice constant of the first electrically insulating layer 114.
  • the first buffer layer 116 can be formed on the substrate 112 by physical vapor deposition, and then the first electrically insulating layer 114 is formed on the first buffer layer 116.
  • the material of the first buffer layer 116 may be, for example, boron nitride (BN).
  • the formed first electrically insulating layer 114 is caused by The lattice matching relationship has a better quality.
  • the first electrically insulating layer 114 formed may have better compactness and adhesion.
  • the stress existing in the first electrically insulating layer 114 can be effectively reduced, thereby reducing the possibility of defects of the first electrically insulating layer 114, so that the manufacturing yield of the isolation structure layer 110 is improved. .
  • the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114. Further, the refractive index of the first electrically insulating layer 114 is N1, the refractive index of the first buffer layer 116 is N2, the refractive index of the substrate 112 is N3, and N1>N2>N3. In other words, the first buffer layer 116 provides a gain effect on optical matching in addition to providing a buffering effect on lattice matching.
  • the refractive index of the first electrically insulating layer 114 is 1.71
  • the material of the first buffer layer 116 is boron nitride
  • the first buffer layer 116 The refractive index of the substrate 112 is 1.65.
  • the material of the substrate 112 is ETFE
  • the refractive index of the substrate 112 is 1.59.
  • the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114, and the refractive index difference between the first buffer layer 116 and the first electrically insulating layer 114
  • the difference between the refractive index of the first buffer layer 116 and the substrate 112 is smaller than the refractive index difference between the substrate 112 and the first electrically insulating layer 114. Therefore, from the outside of the photovoltaic conversion module 200 to the photovoltaic conversion element 108 through the transparent glass 102 The incident light can reduce the likelihood of reflections that occur in the isolation structure layer 110.
  • the isolation structure layer 110 is disposed in the photovoltaic conversion module 200, by the configuration that the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114, Light incident from the outside of the photovoltaic conversion module 200 through the light transmissive glass 102 toward the photovoltaic conversion element 108 can still effectively pass through the isolation structure layer 110 and into the photovoltaic conversion element 108.
  • the isolation structure layer 110 of the present embodiment further includes the second electrically insulating layer 118 and the second buffer layer 120.
  • the second electrically insulating layer 118 is disposed on a side of the substrate 112 opposite to the first electrically insulating layer 114 and has electrical insulating properties.
  • the second buffer layer 120 is disposed between the substrate 112 and the second electrically insulating layer 118, wherein the lattice constant of the second buffer layer 120 is between the lattice constant of the substrate 112 and the lattice constant of the second electrically insulating layer 118.
  • first electrically insulating layer 114 and the second electrically insulating layer 118 may be formed by the same process, and they may also be composed of the same material.
  • first buffer layer 116 and the second buffer layer 120 may be formed by the same process, and they may also be composed of the same material.
  • the first electrically insulating layer 114 and the second electrically insulating layer 118 are respectively disposed on opposite sides of the substrate 112. Therefore, the effect of the barrier structure for protecting the metal ions provided by the isolation structure layer 110 is further enhanced, so that the isolation structure layer 110 can provide better suppression of metal ion migration to more effectively prevent the photovoltaic conversion element 108 from being sodium ions (Na+).
  • the carrier recombination phenomenon caused by migration to its surface, and therefore, the power loss of the photovoltaic conversion module 300 can be effectively reduced.
  • the power loss of the photovoltaic conversion module is greater than 30% and is classified into C in the case where the photovoltaic conversion module is not provided with an isolation structure layer.
  • Level (C class) In the case where the photovoltaic conversion module is provided with an isolation structure layer, the power conversion of the photovoltaic conversion module is less than 5%, and can be classified into the A class.
  • the photovoltaic conversion module of the present invention comprises an isolation structure layer, wherein the isolation structure layer can block the metal ion migration path from the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the photoelectric conversion element from being affected by sodium ions ( Na+) migration phenomenon to the surface caused by the carrier complex phenomenon, thereby reducing the power loss of the photovoltaic conversion module.
  • the isolation structure layer may further comprise a buffer layer.
  • the buffer layer also provides an optical matching effect of the isolation structure layer, so that the photovoltaic conversion module passes through the outside of the photovoltaic conversion module when the isolation structure layer is disposed. The light incident on the photovoltaic conversion element of the light transmissive glass can still effectively pass through the isolation structure layer and enter the photovoltaic conversion element.
  • the invention provides a photovoltaic conversion module comprising a back plate, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer and a light transmissive glass.
  • the photovoltaic conversion element is disposed on the backboard.
  • the isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate and a first electrically insulating layer.
  • the first electrically insulating layer is disposed on the substrate.
  • the first encapsulating material layer is disposed on the isolation structure layer.
  • the light transmissive glass is disposed on the first encapsulating material layer.
  • the isolation structure layer can block the metal ion migration path of the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the carrier (electron-hole pair) composite phenomenon of the photovoltaic conversion element due to the migration of sodium ions to the surface thereof. In turn, the power loss of the photovoltaic conversion module is reduced.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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Abstract

A photovoltaic conversion module comprises a back plate (101), a photovoltaic conversion component (108), an isolation structure layer (110), a first packaging material layer (104), and light-transmitting glass (102). The photovoltaic conversion component (108) is disposed on the back plate (101). The isolation structure layer (110) is disposed on the photovoltaic conversion component (108), and comprises a base plate (112) and a first electrical insulation layer (114). The first electrical insulation layer (114) is disposed on the base plate (112). The first packaging material layer (104) is disposed on the isolation structure layer (110). The light-transmitting glass (102) is disposed on the first packaging material layer (104). The photovoltaic conversion module can reduce the power loss of the photovoltaic conversion module.

Description

光伏转换模块Photovoltaic conversion module 技术领域Technical field
本发明涉及一种光伏转换模块。The invention relates to a photovoltaic conversion module.
背景技术Background technique
近几年来，由于世界各地的原油存量逐年的减少，能源问题已成为全球注目的焦点。为了解决能源耗竭的危机，各种替代能源的发展与利用实为当务之急。随着环保意识抬头，加上太阳能具有零污染、以及取之不尽用之不竭的优点，太阳能已成为相关领域中最受瞩目的焦点。因此，在日照充足的位置，例如建筑物屋顶、广场等等，愈来愈常见到太阳能面板的装设。In recent years, as the stock of crude oil around the world has decreased year by year, the energy issue has become the focus of global attention. In order to solve the crisis of energy exhaustion, the development and utilization of various alternative energy sources is a top priority. With the rising awareness of environmental protection, coupled with the zero pollution of solar energy and the inexhaustible advantages of solar energy, solar energy has become the focus of attention in related fields. Therefore, in places where there is sufficient sunshine, such as building roofs, squares, etc., it is becoming more and more common to install solar panels.
于太阳能模块中，其主要通过多个光伏转换装置组成，并再通过封装材料将其固定。然而，太阳能模块中的封装材料配置或组装方式也会与太阳能模块的发电效率有关。例如，封装材料可能会对光伏转换装置造成负面影响。对此，如何降低封装材料对光伏转换装置所造成的负面影响，已成为相关领域中的一个重要课题。In the solar module, it is mainly composed of a plurality of photovoltaic conversion devices, and is fixed by a packaging material. However, the manner in which the packaging material is configured or assembled in the solar module is also related to the power generation efficiency of the solar module. For example, packaging materials can have a negative impact on photovoltaic converters. In this regard, how to reduce the negative impact of packaging materials on photovoltaic converters has become an important issue in related fields.
发明公开Invention disclosure
本发明的一实施方式提供一种光伏转换模块。光伏转换模块包含隔离结构层，其中隔离结构层可通过其中的绝缘层阻绝透光玻璃至光伏转换元件的金属离子迁移路径，以防止光伏转换元件因钠离子(Na+)迁移至其表面而产生的载子(电子-电洞对)复合现象，进而降低光伏转换模块的功率损失(power loss)。An embodiment of the invention provides a photovoltaic conversion module. The photovoltaic conversion module comprises an isolation structure layer, wherein the isolation structure layer can block the metal ion migration path of the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the photovoltaic conversion element from being generated by the migration of sodium ions (Na + ) to the surface thereof. The carrier (electron-hole pair) composite phenomenon, which in turn reduces the power loss of the photovoltaic converter module.
本发明的一实施方式提供一种光伏转换模块，包含背板、光伏转换元件、隔离结构层、第一封装材料层与透光玻璃。光伏转换元件设置于背板上。隔离结构层设置于光伏转换元件之上，并包含基板与第一电绝缘层。第一电绝缘层设置于基板上。第一封装材料层设置于隔离结构层上。透光玻璃设置于第一封装材料层上。An embodiment of the present invention provides a photovoltaic conversion module including a back sheet, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer, and a light transmissive glass. The photovoltaic conversion element is disposed on the backboard. The isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate and a first electrically insulating layer. The first electrically insulating layer is disposed on the substrate. The first encapsulating material layer is disposed on the isolation structure layer. The light transmissive glass is disposed on the first encapsulating material layer.
于部分实施方式中，隔离结构层更包含第一缓冲层。第一缓冲层设置于基板与第一电绝缘层之间，其中第一缓冲层的晶格常数介于基板的晶格常数与第一电绝缘层的晶格常数之间。 In some embodiments, the isolation structure layer further comprises a first buffer layer. The first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer.
于部分实施方式中，第一缓冲层的折射率介于基板的折射率与第一电绝缘层的折射率之间。In some embodiments, the refractive index of the first buffer layer is between the refractive index of the substrate and the refractive index of the first electrically insulating layer.
于部分实施方式中，第一电绝缘层的折射率为N1，第一缓冲层的折射率为N2，基板的折射率为N3，且N1＞N2＞N3。In some embodiments, the first electrically insulating layer has a refractive index of N1, the first buffer layer has a refractive index of N2, the substrate has a refractive index of N3, and N1>N2>N3.
于部分实施方式中，光伏转换模块更包含第二封装材料层与第三封装材料层。第二封装材料层设置于背板与光伏转换元件之间。第三封装材料层设置于光伏转换元件与隔离结构层之间，其中光伏转换元件被包覆于第二封装材料层与第三封装材料层之间。In some embodiments, the photovoltaic conversion module further includes a second encapsulation material layer and a third encapsulation material layer. The second encapsulating material layer is disposed between the backing plate and the photovoltaic conversion element. The third encapsulating material layer is disposed between the photovoltaic conversion element and the isolation structure layer, wherein the photovoltaic conversion element is coated between the second encapsulation material layer and the third encapsulation material layer.
于部分实施方式中，隔离结构层更包含第一缓冲层、第二电绝缘层与第二缓冲层。第一缓冲层设置于基板与第一电绝缘层之间，其中第一缓冲层的晶格常数介于基板的晶格常数与第一电绝缘层的晶格常数之间。第二电绝缘层设置于基板相对第一电绝缘层的一侧。第二缓冲层设置于基板与第二电绝缘层之间，其中第二缓冲层的晶格常数介于基板的晶格常数与第二电绝缘层的晶格常数之间。In some embodiments, the isolation structure layer further includes a first buffer layer, a second electrical insulation layer, and a second buffer layer. The first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer. The second electrically insulating layer is disposed on a side of the substrate opposite to the first electrically insulating layer. The second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between the lattice constant of the substrate and a lattice constant of the second electrically insulating layer.
于部分实施方式中，第一电绝缘层的材料包含陶瓷、氧化物或其组合，其中氧化物包含四氧化二镁铝(MgAl2O4)。In some embodiments, the material of the first electrically insulating layer comprises a ceramic, an oxide, or a combination thereof, wherein the oxide comprises magnesium aluminum oxide (MgAl 2 O 4 ).
本发明的一实施方式提供一种光伏转换模块，包含背板、光伏转换元件、隔离结构层、第一封装材料层与透光玻璃。光伏转换元件设置于背板上。隔离结构层设置于光伏转换元件上，并包含基板、第一电绝缘层与第一缓冲层。第一电绝缘层，并设置于基板上。第一缓冲层设置于基板与第一电绝缘层之间，其中第一缓冲层的晶格常数介于基板的晶格常数与第一电绝缘层的晶格常数之间。第一封装材料层设置于隔离结构层上。透光玻璃设置于第一封装材料层上。An embodiment of the present invention provides a photovoltaic conversion module including a back sheet, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer, and a light transmissive glass. The photovoltaic conversion element is disposed on the backboard. The isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate, a first electrically insulating layer and a first buffer layer. The first electrically insulating layer is disposed on the substrate. The first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer. The first encapsulating material layer is disposed on the isolation structure layer. The light transmissive glass is disposed on the first encapsulating material layer.
于部分实施方式中，该第一电绝缘层的折射率为N1，该第一缓冲层的折射率为N2，该基板的折射率为N3，且N1＞N2＞N3。In some embodiments, the first electrically insulating layer has a refractive index of N1, the first buffer layer has a refractive index of N2, the substrate has a refractive index of N3, and N1>N2>N3.
于部分实施方式中，该隔离结构层更包含：In some embodiments, the isolation structure layer further comprises:
一第二电绝缘层，设置于该基板相对该第一电绝缘层的一侧；以及a second electrically insulating layer disposed on a side of the substrate opposite the first electrically insulating layer;
一第二缓冲层，设置于该基板与该第二电绝缘层之间，其中该第二缓冲层的晶格常数介于该基板的晶格常数与该第二电绝缘层的晶格常数之间。a second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between a lattice constant of the substrate and a lattice constant of the second electrically insulating layer between.
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的 限定。The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but not limited.
附图简要说明BRIEF DESCRIPTION OF THE DRAWINGS
图1A绘示本发明第一实施方式的光伏转换模块的剖视示意图。FIG. 1A is a schematic cross-sectional view of a photovoltaic conversion module according to a first embodiment of the present invention.
图1B绘示图1A的区域A的放大示意图。FIG. 1B is an enlarged schematic view of a region A of FIG. 1A.
图2绘示本发明第二实施方式的光伏转换模块的剖视示意图。2 is a cross-sectional view showing a photovoltaic conversion module according to a second embodiment of the present invention.
图3绘示本发明第三实施方式的光伏转换模块的剖视示意图。3 is a cross-sectional view showing a photovoltaic conversion module according to a third embodiment of the present invention.
其中，附图标记：Among them, the reference number:
100、200、300 光伏转换模块100, 200, 300 PV conversion module
101 背板101 backplane
102 透光玻璃102 light-transmissive glass
104 第一封装材料层104 first encapsulating material layer
106 第二封装材料层106 second encapsulating material layer
107 第三封装材料层107 third encapsulating material layer
108 光伏转换元件108 photovoltaic converter components
109 焊带109 welding tape
110 隔离结构层110 isolation structure
112 基板112 substrate
114 第一电绝缘层114 first electrical insulation layer
116 第一缓冲层116 first buffer layer
118 第二电绝缘层118 second electrical insulation layer
120 第二缓冲层120 second buffer layer
122 正离子122 positive ions
124 负离子124 negative ions
A 区域A area
L 虚线L dotted line
实现本发明的最佳方式The best way to implement the invention
以下将以图式揭露本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用 以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化图式起见，一些现有惯用的结构与组件在图式中将以简单示意的方式绘示之。In the following, various embodiments of the invention are disclosed in the drawings. However, it should be understood that these practical details are not applied. To limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and components of the prior art are illustrated in a simplified schematic manner in the drawings.
有鉴于封装材料可能会对光伏转换元件造成负面影响，本发明的一实施方式提供一种光伏转换模块包含隔离结构层，其中隔离结构层可通过其中的绝缘层阻绝自透光玻璃至光伏转换元件的金属离子迁移路径，以防止光伏转换元件因钠离子(Na+)迁移至其表面而产生的载子(电子-电洞对)复合现象，进而降低光伏转换模块的功率损失(power loss)。In view of the fact that the packaging material may adversely affect the photovoltaic conversion component, an embodiment of the present invention provides a photovoltaic conversion module including an isolation structure layer, wherein the isolation structure layer can block the self-transmissive glass to the photovoltaic conversion element through the insulating layer therein The metal ion migration path prevents the photoconductor (electron-hole pair) composite phenomenon of the photovoltaic conversion element due to the migration of sodium ions (Na + ) to its surface, thereby reducing the power loss of the photovoltaic conversion module.
请参照图1A与图1B。图1A绘示本发明第一实施方式的光伏转换模块100的剖视示意图。图1B绘示图1A的区域A的放大示意图。光伏转换模块100包含背板101、光伏转换元件108、焊带109、隔离结构层110、第一封装材料层104、第二封装材料层106、第三封装材料层107与透光玻璃102，其中光伏转换元件108可以是太阳能电池、太阳能发电装置或是其它将光能转换为电能的装置。此外，为了方便说明，图1A于第二封装材料层106与第三封装材料层107之间绘示有虚线L。Please refer to FIG. 1A and FIG. 1B. FIG. 1A is a schematic cross-sectional view of a photovoltaic conversion module 100 according to a first embodiment of the present invention. FIG. 1B is an enlarged schematic view of a region A of FIG. 1A. The photovoltaic conversion module 100 includes a backing plate 101, a photovoltaic conversion element 108, a solder ribbon 109, an isolation structure layer 110, a first encapsulation material layer 104, a second encapsulation material layer 106, a third encapsulation material layer 107, and a light transmissive glass 102, wherein The photovoltaic conversion element 108 can be a solar cell, a solar power plant, or other device that converts light energy into electrical energy. In addition, for convenience of description, FIG. 1A shows a broken line L between the second encapsulating material layer 106 and the third encapsulating material layer 107.
光伏转换元件108设置于背板上，并互相电性耦接。焊带109分别设置于相邻的光伏转换元件108之间，以将多个光伏转换元件108串接。隔离结构层110设置于光伏转换元件108之上，并包含基板112与第一电绝缘层114。第一电绝缘层114具有电绝缘特性，并设置于基板112上。第一封装材料层104设置于隔离结构层110上。透光玻璃102设置于第一封装材料层104上。此外，可选用的，第二封装材料层106设置于背板101与光伏转换元件108之间。第三封装材料层107设置于光伏转换元件108与隔离结构层110之间，其中光伏转换元件108被包覆于第二封装材料层106与第三封装材料层107之间，亦即被包覆于虚线L的位置，以将光伏转换元件108固定于光伏转换模块100之中。第一封装材料层104、第二封装材料层106与第三封装材料层107的材料可以是由乙烯-醋酸乙烯酯(EVA)构成或者包含乙烯-醋酸乙烯酯。The photovoltaic conversion elements 108 are disposed on the backplane and electrically coupled to each other. Solder strips 109 are disposed between adjacent photovoltaic conversion elements 108 to connect the plurality of photovoltaic conversion elements 108 in series. The isolation structure layer 110 is disposed over the photovoltaic conversion element 108 and includes a substrate 112 and a first electrically insulating layer 114. The first electrically insulating layer 114 has electrical insulating properties and is disposed on the substrate 112. The first encapsulation material layer 104 is disposed on the isolation structure layer 110. The light transmissive glass 102 is disposed on the first encapsulating material layer 104. In addition, the second encapsulating material layer 106 is disposed between the back plate 101 and the photovoltaic conversion element 108. The third encapsulating material layer 107 is disposed between the photovoltaic conversion element 108 and the isolation structure layer 110, wherein the photovoltaic conversion element 108 is coated between the second encapsulation material layer 106 and the third encapsulation material layer 107, that is, coated At the location of the dashed line L, the photovoltaic conversion element 108 is secured within the photovoltaic conversion module 100. The material of the first encapsulating material layer 104, the second encapsulating material layer 106 and the third encapsulating material layer 107 may be composed of ethylene vinyl acetate (EVA) or ethylene vinyl acetate.
于此配置下，借由第一电绝缘层114的电绝缘特性，隔离结构层110可阻绝或减少第一封装材料层104与光伏转换元件108之间的正离子迁移路径，例如阻绝钠离子(Na+)的迁移路径，借以防止或减少光伏转换元件108因钠离子(Na+)自透光玻璃102经由第一封装材料层104迁移至其表面而产生载子复合 现象。举例而言，如图1B所示，当有水气进入第一封装材料层104时，第一封装材料层104会因水解反应而产生负离子124(例如，第一封装材料层104中的EVA材料因水解反应产生带负电的醋酸根离子团)，其中水解而产生的负离子124会导致由玻璃构成的透光玻璃102有正离子122析出的可能性(例如，透光玻璃102中的玻璃材料会因醋酸根离子团而析出带正电的钠离子)。接着，正离子122会受到负离子124吸引，而使得此正离子122朝光伏转换元件108的方向行进。由于隔离结构层110位于第一封装材料层104与光伏转换元件108之间，因此，隔离结构层110可阻绝正离子122行进至光伏转换元件108，以防止光伏转换元件108因正离子122行进至其表面而产生载子(电子-电洞对)复合现象，借以使光伏转换模块100的功率损失可以有效被降低。换言之，借由第一电绝缘层114的电绝缘特性，隔离结构层110可提供对于金属离子迁移的抑制功效，以有效防止光伏转换元件108因钠离子迁移至其表面而产生的载子复合现象，使得光伏转换模块100的功率损失可以有效被降低。In this configuration, the isolation structure layer 110 can block or reduce the positive ion migration path between the first encapsulation material layer 104 and the photovoltaic conversion element 108, such as blocking sodium ions, by the electrical insulation properties of the first electrically insulating layer 114 ( The migration path of Na + ) is to prevent or reduce the phenomenon of carrier recombination of the photovoltaic conversion element 108 due to sodium ions (Na + ) migrating from the light-transmissive glass 102 to the surface via the first encapsulating material layer 104. For example, as shown in FIG. 1B, when moisture enters the first encapsulating material layer 104, the first encapsulating material layer 104 generates negative ions 124 due to the hydrolysis reaction (eg, the EVA material in the first encapsulating material layer 104). The negatively charged acetate ion group is generated by the hydrolysis reaction, and the negative ions 124 generated by the hydrolysis cause the light-transmitting glass 102 composed of glass to have the possibility of precipitation of the positive ions 122 (for example, the glass material in the light-transmitting glass 102 will Positively charged sodium ions are precipitated due to acetate ion groups). Next, the positive ions 122 are attracted by the negative ions 124, causing the positive ions 122 to travel in the direction of the photovoltaic conversion element 108. Since the isolation structure layer 110 is located between the first encapsulation material layer 104 and the photovoltaic conversion element 108, the isolation structure layer 110 can block the positive ions 122 from traveling to the photovoltaic conversion element 108 to prevent the photovoltaic conversion element 108 from traveling to the positive ions 122. The surface thereof generates a carrier (electron-hole pair) composite phenomenon, whereby the power loss of the photovoltaic conversion module 100 can be effectively reduced. In other words, by the electrical insulating property of the first electrically insulating layer 114, the isolation structure layer 110 can provide an inhibitory effect on the migration of metal ions to effectively prevent the carrier recombination phenomenon of the photovoltaic conversion element 108 due to the migration of sodium ions to the surface thereof. The power loss of the photovoltaic conversion module 100 can be effectively reduced.
本实施方式中，第一电绝缘层114可借由物理气相沉积(physical vapor deposition；PVD)的方式，例如溅镀(sputter deposition)，形成于基板112上，其中第一电绝缘层114的材料可以是无机物。进一步而言，第一电绝缘层114的材料可以是/包含陶瓷、氧化物或其组合，其中氧化物可以是/包含高稳定性的氧化物材料，例如四氧化二镁铝(MgAl2O4)。基板112的材料可以是乙烯-四氟乙烯共聚物(ethylene tetrafluoroethylene；ETFE)。此外，于部分实施方式中，第一电绝缘层114的折射率大于基板112的折射率。例如，当第一电绝缘层114的材料为四氧化二镁铝时，第一电绝缘层114的折射率为1.71，当基板112的材料为ETFE时，基板112的折射率为1.59。In this embodiment, the first electrically insulating layer 114 can be formed on the substrate 112 by means of physical vapor deposition (PVD), such as sputtering deposition, wherein the material of the first electrically insulating layer 114 It can be inorganic. Further, the material of the first electrically insulating layer 114 may be/contain a ceramic, an oxide or a combination thereof, wherein the oxide may be/contain a highly stable oxide material, such as magnesium aluminum oxide (MgAl 2 O 4 ) ). The material of the substrate 112 may be ethylene tetrafluoroethylene (ETFE). Moreover, in some embodiments, the refractive index of the first electrically insulating layer 114 is greater than the refractive index of the substrate 112. For example, when the material of the first electrically insulating layer 114 is magnesium aluminum oxide, the refractive index of the first electrically insulating layer 114 is 1.71, and when the material of the substrate 112 is ETFE, the refractive index of the substrate 112 is 1.59.
此外，本实施方式中，隔离结构层110中的基板112为朝向背板101，而隔离结构层110中的第一电绝缘层114为朝向透光玻璃102。然而，应了解到，图1A所绘的隔离结构层110中的基板112与第一电绝缘层114的朝向仅为例示，而非用以限制本发明，本发明所属技术领域中技术人员，可依实际需要，弹性选择基板112与第一电绝缘层114的朝向。例如，于其它实施方式中，隔离结构层110中的基板112可朝向透光玻璃102，而隔离结构层110中的第一电绝缘层114为朝向背板101。In addition, in the embodiment, the substrate 112 in the isolation structure layer 110 faces the back plate 101 , and the first electrically insulating layer 114 in the isolation structure layer 110 faces the light transmissive glass 102 . However, it should be understood that the orientation of the substrate 112 and the first electrically insulating layer 114 in the isolation structure layer 110 depicted in FIG. 1A is merely illustrative, and is not intended to limit the present invention, and may be The orientation of the substrate 112 and the first electrically insulating layer 114 is elastically selected according to actual needs. For example, in other embodiments, the substrate 112 in the isolation structure layer 110 may face the light transmissive glass 102, and the first electrically insulating layer 114 in the isolation structure layer 110 faces the back plate 101.
图2绘示本发明第二实施方式的光伏转换模块200的剖视示意图。本实施 方式与第一实施方式的差异在于，本实施方式的隔离结构层110更包含第一缓冲层116。第一缓冲层116设置于基板112与第一电绝缘层114之间，其中第一缓冲层116的晶格常数介于基板112的晶格常数与第一电绝缘层114的晶格常数之间。同样地，第一缓冲层116可借由物理气相沉积方式形成于基板112上，接着，第一电绝缘层114再形成于第一缓冲层116上。此外，第一缓冲层116的材料可以例如是氮化硼(boron nitride；BN)。2 is a cross-sectional view showing a photovoltaic conversion module 200 according to a second embodiment of the present invention. This implementation The difference between the mode and the first embodiment is that the isolation structure layer 110 of the present embodiment further includes the first buffer layer 116. The first buffer layer 116 is disposed between the substrate 112 and the first electrically insulating layer 114, wherein a lattice constant of the first buffer layer 116 is between the lattice constant of the substrate 112 and the lattice constant of the first electrically insulating layer 114. . Similarly, the first buffer layer 116 can be formed on the substrate 112 by physical vapor deposition, and then the first electrically insulating layer 114 is formed on the first buffer layer 116. Further, the material of the first buffer layer 116 may be, for example, boron nitride (BN).
于此配置下，由于第一缓冲层116的晶格常数介于基板112的晶格常数与第一电绝缘层114的晶格常数之间，因此，所形成的第一电绝缘层114会因晶格匹配的关系而有较佳的质量。例如，所形成的第一电绝缘层114可具有更佳致密性及附着性。再者，由于晶格匹配的关系，存在于第一电绝缘层114内的应力可以有效被降低，借以降低第一电绝缘层114产生缺陷的可能性，使得隔离结构层110的制造良率提升。In this configuration, since the lattice constant of the first buffer layer 116 is between the lattice constant of the substrate 112 and the lattice constant of the first electrically insulating layer 114, the formed first electrically insulating layer 114 is caused by The lattice matching relationship has a better quality. For example, the first electrically insulating layer 114 formed may have better compactness and adhesion. Moreover, due to the lattice matching relationship, the stress existing in the first electrically insulating layer 114 can be effectively reduced, thereby reducing the possibility of defects of the first electrically insulating layer 114, so that the manufacturing yield of the isolation structure layer 110 is improved. .
此外，本实施方式中，第一缓冲层116的折射率介于基板112的折射率与第一电绝缘层114的折射率之间。进一步而言，第一电绝缘层114的折射率为N1，第一缓冲层116的折射率为N2，基板112的折射率为N3，且N1＞N2＞N3。换言之，第一缓冲层116除了提供晶格匹配上的缓冲效果外，也提供光学匹配上的增益效果。例如，当第一电绝缘层114的材料为四氧化二镁铝时，第一电绝缘层114的折射率为1.71，当第一缓冲层116的材料为氮化硼时，第一缓冲层116的折射率为1.65，当基板112的材料为ETFE时，基板112的折射率为1.59。Further, in the present embodiment, the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114. Further, the refractive index of the first electrically insulating layer 114 is N1, the refractive index of the first buffer layer 116 is N2, the refractive index of the substrate 112 is N3, and N1>N2>N3. In other words, the first buffer layer 116 provides a gain effect on optical matching in addition to providing a buffering effect on lattice matching. For example, when the material of the first electrically insulating layer 114 is magnesium aluminum oxide, the refractive index of the first electrically insulating layer 114 is 1.71, and when the material of the first buffer layer 116 is boron nitride, the first buffer layer 116 The refractive index of the substrate 112 is 1.65. When the material of the substrate 112 is ETFE, the refractive index of the substrate 112 is 1.59.
也就是说，由于第一缓冲层116的折射率介于基板112的折射率与第一电绝缘层114的折射率之间，且第一缓冲层116与第一电绝缘层114的折射率差值、第一缓冲层116与基板112的折射率差值皆小于基板112与第一电绝缘层114的折射率差值，因此，自光伏转换模块200外部通过透光玻璃102朝光伏转换元件108入射的光线可以减少其于隔离结构层110中发生的反射可能性。That is, since the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114, and the refractive index difference between the first buffer layer 116 and the first electrically insulating layer 114 The difference between the refractive index of the first buffer layer 116 and the substrate 112 is smaller than the refractive index difference between the substrate 112 and the first electrically insulating layer 114. Therefore, from the outside of the photovoltaic conversion module 200 to the photovoltaic conversion element 108 through the transparent glass 102 The incident light can reduce the likelihood of reflections that occur in the isolation structure layer 110.
换言之，于光伏转换模块200中设置有隔离结构层110的情况下，借由第一缓冲层116的折射率介于基板112的折射率与第一电绝缘层114的折射率之间的配置，自光伏转换模块200外部通过透光玻璃102朝光伏转换元件108入射的光线仍可有效穿过隔离结构层110并进入光伏转换元件108。In other words, in the case where the isolation structure layer 110 is disposed in the photovoltaic conversion module 200, by the configuration that the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114, Light incident from the outside of the photovoltaic conversion module 200 through the light transmissive glass 102 toward the photovoltaic conversion element 108 can still effectively pass through the isolation structure layer 110 and into the photovoltaic conversion element 108.
图3绘示本发明第三实施方式的光伏转换模块300的剖视示意图。本实施 方式与第一实施方式的差异在于，本实施方式的隔离结构层110更包含第二电绝缘层118与第二缓冲层120。第二电绝缘层118设置于基板112相对第一电绝缘层114的一侧，并具有电绝缘特性。第二缓冲层120设置于基板112与第二电绝缘层118之间，其中第二缓冲层120的晶格常数介于基板112的晶格常数与第二电绝缘层118的晶格常数之间。此外，第一电绝缘层114与第二电绝缘层118可由相同的工艺形成，且其也可由相同的材料构成。同样地，第一缓冲层116与第二缓冲层120可由相同的工艺形成，且其也可由相同的材料构成。3 is a cross-sectional view of a photovoltaic conversion module 300 according to a third embodiment of the present invention. This implementation The difference from the first embodiment is that the isolation structure layer 110 of the present embodiment further includes the second electrically insulating layer 118 and the second buffer layer 120. The second electrically insulating layer 118 is disposed on a side of the substrate 112 opposite to the first electrically insulating layer 114 and has electrical insulating properties. The second buffer layer 120 is disposed between the substrate 112 and the second electrically insulating layer 118, wherein the lattice constant of the second buffer layer 120 is between the lattice constant of the substrate 112 and the lattice constant of the second electrically insulating layer 118. . Further, the first electrically insulating layer 114 and the second electrically insulating layer 118 may be formed by the same process, and they may also be composed of the same material. Likewise, the first buffer layer 116 and the second buffer layer 120 may be formed by the same process, and they may also be composed of the same material.
本实施方式中，于隔离结构层110中，基板112的相对两侧分别设置有第一电绝缘层114与第二电绝缘层118。因此，隔离结构层110所提供的阻绝金属离子迁移路径的效果进一步提升，使得隔离结构层110可提供更佳对于金属离子迁移的抑制功效，以更有效防止光伏转换元件108因钠离子(Na+)迁移至其表面而导致的载子复合现象，也因此，光伏转换模块300的功率损失可以有效被降低。In the embodiment, in the isolation structure layer 110, the first electrically insulating layer 114 and the second electrically insulating layer 118 are respectively disposed on opposite sides of the substrate 112. Therefore, the effect of the barrier structure for protecting the metal ions provided by the isolation structure layer 110 is further enhanced, so that the isolation structure layer 110 can provide better suppression of metal ion migration to more effectively prevent the photovoltaic conversion element 108 from being sodium ions (Na+). The carrier recombination phenomenon caused by migration to its surface, and therefore, the power loss of the photovoltaic conversion module 300 can be effectively reduced.
举例而言，依据IEC62804的规范，于电势诱发功率衰减(PID)的测试中，在光伏转换模块没有设置隔离结构层的情况下，光伏转换模块的功率损失为大于30％，且被分类至C级别(C class)。于光伏转换模块设置有隔离结构层的情况下，光伏转换模块的功率损失为小于5％，且可被分类至A级别(A class)。For example, according to the specification of IEC62804, in the test of potential induced power attenuation (PID), the power loss of the photovoltaic conversion module is greater than 30% and is classified into C in the case where the photovoltaic conversion module is not provided with an isolation structure layer. Level (C class). In the case where the photovoltaic conversion module is provided with an isolation structure layer, the power conversion of the photovoltaic conversion module is less than 5%, and can be classified into the A class.
综上所述，本发明的光伏转换模块包含隔离结构层，其中隔离结构层可通过其中的绝缘层阻绝自透光玻璃至光伏转换元件的金属离子迁移路径，以防止光伏转换元件因钠离子(Na+)迁移至其表面而导致的载子复合现象，进而降低光伏转换模块的功率损失。此外，隔离结构层可以更包含缓冲层。缓冲层除了使隔离结构层中各层之间的晶格常数更接近外，也提供隔离结构层光学匹配的效果，使得光伏转换模块于设置有隔离结构层的情况下，自光伏转换模块外部通过透光玻璃朝光伏转换元件入射的光线仍可有效穿过隔离结构层并进入光伏转换元件。In summary, the photovoltaic conversion module of the present invention comprises an isolation structure layer, wherein the isolation structure layer can block the metal ion migration path from the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the photoelectric conversion element from being affected by sodium ions ( Na+) migration phenomenon to the surface caused by the carrier complex phenomenon, thereby reducing the power loss of the photovoltaic conversion module. Furthermore, the isolation structure layer may further comprise a buffer layer. In addition to making the lattice constant between the layers in the isolation structure layer closer, the buffer layer also provides an optical matching effect of the isolation structure layer, so that the photovoltaic conversion module passes through the outside of the photovoltaic conversion module when the isolation structure layer is disposed. The light incident on the photovoltaic conversion element of the light transmissive glass can still effectively pass through the isolation structure layer and enter the photovoltaic conversion element.
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。The invention may, of course, be embodied in a variety of other embodiments without departing from the spirit and scope of the invention. Changes and modifications are intended to be included within the scope of the appended claims.
工业应用性Industrial applicability
本发明提供的一种光伏转换模块，包含背板、光伏转换元件、隔离结构层、第一封装材料层与透光玻璃。光伏转换元件设置于背板上。隔离结构层设置于光伏转换元件上，并包含基板与第一电绝缘层。第一电绝缘层设置于基板上。第一封装材料层设置于隔离结构层上。透光玻璃设置于第一封装材料层上。隔离结构层可通过其中的绝缘层阻绝透光玻璃至光伏转换元件的金属离子迁移路径，以防止光伏转换元件因钠离子迁移至其表面而产生的载子(电子-电洞对)复合现象，进而降低光伏转换模块的功率损失。 The invention provides a photovoltaic conversion module comprising a back plate, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer and a light transmissive glass. The photovoltaic conversion element is disposed on the backboard. The isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate and a first electrically insulating layer. The first electrically insulating layer is disposed on the substrate. The first encapsulating material layer is disposed on the isolation structure layer. The light transmissive glass is disposed on the first encapsulating material layer. The isolation structure layer can block the metal ion migration path of the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the carrier (electron-hole pair) composite phenomenon of the photovoltaic conversion element due to the migration of sodium ions to the surface thereof. In turn, the power loss of the photovoltaic conversion module is reduced.

Claims (10)

  1. 一种光伏转换模块，其特征在于，包含：A photovoltaic conversion module, comprising:
    一背板；a backboard
    至少一光伏转换元件，设置于该背板上；At least one photovoltaic conversion element disposed on the backplane;
    一隔离结构层，设置于该光伏转换元件之上，并包含：An isolation structure layer disposed on the photovoltaic conversion element and comprising:
    一基板；以及a substrate;
    一第一电绝缘层，设置于该基板上；a first electrically insulating layer disposed on the substrate;
    一第一封装材料层，设置于该隔离结构层上；以及a first encapsulating material layer disposed on the isolation structure layer;
    一透光玻璃，设置于该第一封装材料层上。A light transmissive glass is disposed on the first encapsulating material layer.
  2. 根据权利要求1所述的光伏转换模块，其特征在于，该隔离结构层更包含一第一缓冲层，设置于该基板与该第一电绝缘层之间，其中该第一缓冲层的晶格常数介于该基板的晶格常数与该第一电绝缘层的晶格常数之间。The photovoltaic conversion module according to claim 1, wherein the isolation structure layer further comprises a first buffer layer disposed between the substrate and the first electrically insulating layer, wherein a lattice of the first buffer layer The constant is between the lattice constant of the substrate and the lattice constant of the first electrically insulating layer.
  3. 根据权利要求2所述的光伏转换模块，其特征在于，该第一缓冲层的折射率介于该基板的折射率与该第一电绝缘层的折射率之间。The photovoltaic conversion module according to claim 2, wherein the first buffer layer has a refractive index between a refractive index of the substrate and a refractive index of the first electrically insulating layer.
  4. 根据权利要求3所述的光伏转换模块，其特征在于，该第一电绝缘层的折射率为N1，该第一缓冲层的折射率为N2，该基板的折射率为N3，且N1＞N2＞N3。The photovoltaic conversion module according to claim 3, wherein the first electrically insulating layer has a refractive index of N1, the first buffer layer has a refractive index of N2, the substrate has a refractive index of N3, and N1>N2 >N3.
  5. 根据权利要求1所述的光伏转换模块，其特征在于，更包含：The photovoltaic conversion module according to claim 1, further comprising:
    一第二封装材料层，设置于该背板与该光伏转换元件之间；以及a second encapsulating material layer disposed between the backplane and the photovoltaic conversion element;
    一第三封装材料层，设置于该光伏转换元件与该隔离结构层之间，其中该光伏转换元件被包覆于该第二封装材料层与该第三封装材料层之间。A third encapsulating material layer is disposed between the photovoltaic conversion element and the isolation structure layer, wherein the photovoltaic conversion element is coated between the second encapsulation material layer and the third encapsulation material layer.
  6. 根据权利要求1所述的光伏转换模块，其特征在于，该隔离结构层更包含：The photovoltaic conversion module according to claim 1, wherein the isolation structure layer further comprises:
    一第一缓冲层，设置于该基板与该第一电绝缘层之间，其中该第一缓冲层的晶格常数介于该基板的晶格常数与该第一电绝缘层的晶格常数之间；a first buffer layer disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer between;
    一第二电绝缘层，设置于该基板相对该第一电绝缘层的一侧；以及a second electrically insulating layer disposed on a side of the substrate opposite the first electrically insulating layer;
    一第二缓冲层，设置于该基板与该第二电绝缘层之间，其中该第二缓冲层的晶格常数介于该基板的晶格常数与该第二电绝缘层的晶格常数之间。a second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between a lattice constant of the substrate and a lattice constant of the second electrically insulating layer between.
  7. 根据权利要求1至6任一所述的光伏转换模块，其特征在于，该第一电绝缘层的材料为四氧化二镁铝。 The photovoltaic converter module according to any one of claims 1 to 6, wherein the material of the first electrically insulating layer is magnesium aluminum oxide.
  8. 一种光伏转换模块，其特征在于，包含：A photovoltaic conversion module, comprising:
    一背板；a backboard
    至少一光伏转换元件，设置于该背板上；At least one photovoltaic conversion element disposed on the backplane;
    一隔离结构层，设置于该光伏转换元件上，并包含：An isolation structure layer disposed on the photovoltaic conversion element and comprising:
    一基板；a substrate;
    一第一电绝缘层，设置于该基板上；以及a first electrically insulating layer disposed on the substrate;
    一第一缓冲层，设置于该基板与该第一电绝缘层之间，其中该第一缓冲层的晶格常数介于该基板的晶格常数与该第一电绝缘层的晶格常数之间；a first buffer layer disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer between;
    一第一封装材料层，设置于该隔离结构层上；以及a first encapsulating material layer disposed on the isolation structure layer;
    一透光玻璃，设置于该第一封装材料层上。A light transmissive glass is disposed on the first encapsulating material layer.
  9. 根据权利要求8所述的光伏转换模块，其特征在于，该第一电绝缘层的折射率为N1，该第一缓冲层的折射率为N2，该基板的折射率为N3，且N1＞N2＞N3。The photovoltaic conversion module according to claim 8, wherein the first electrically insulating layer has a refractive index of N1, the first buffer layer has a refractive index of N2, the substrate has a refractive index of N3, and N1>N2 >N3.
  10. 根据权利要求8或9所述的光伏转换模块，其特征在于，该隔离结构层更包含：The photovoltaic conversion module according to claim 8 or 9, wherein the isolation structure layer further comprises:
    一第二电绝缘层，设置于该基板相对该第一电绝缘层的一侧；以及a second electrically insulating layer disposed on a side of the substrate opposite the first electrically insulating layer;
    一第二缓冲层，设置于该基板与该第二电绝缘层之间，其中该第二缓冲层的晶格常数介于该基板的晶格常数与该第二电绝缘层的晶格常数之间。 a second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between a lattice constant of the substrate and a lattice constant of the second electrically insulating layer between.
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