TW201714320A - Photovoltaic conversion module - Google Patents
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- TW201714320A TW201714320A TW104138756A TW104138756A TW201714320A TW 201714320 A TW201714320 A TW 201714320A TW 104138756 A TW104138756 A TW 104138756A TW 104138756 A TW104138756 A TW 104138756A TW 201714320 A TW201714320 A TW 201714320A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 61
- 238000002955 isolation Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 3
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 14
- 230000005012 migration Effects 0.000 description 13
- 238000013508 migration Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 11
- 229910001415 sodium ion Inorganic materials 0.000 description 8
- 239000005022 packaging material Substances 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 5
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical group CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- BRPQIVQUARXQNF-UHFFFAOYSA-M [O-2].[O-2].[OH-].O.O.[Mg+2].[Al+3] Chemical compound [O-2].[O-2].[OH-].O.O.[Mg+2].[Al+3] BRPQIVQUARXQNF-UHFFFAOYSA-M 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- GSWGDDYIUCWADU-UHFFFAOYSA-N aluminum magnesium oxygen(2-) Chemical compound [O--].[Mg++].[Al+3] GSWGDDYIUCWADU-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000010779 crude oil Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本發明是有關於一種光伏轉換模組。 The invention relates to a photovoltaic conversion module.
近幾年來，由於世界各地的原油存量逐年的減少，能源問題已成為全球注目的焦點。為了解決能源耗竭的危機，各種替代能源的發展與利用實為當務之急。隨著環保意識抬頭，加上太陽能具有零污染、以及取之不盡用之不竭的優點，太陽能已成為相關領域中最受矚目的焦點。因此，在日照充足的位置，例如建築物屋頂、廣場等等，愈來愈常見到太陽能面板的裝設。 In recent years, as the stock of crude oil around the world has decreased year by year, the energy issue has become the focus of global attention. In order to solve the crisis of energy exhaustion, the development and utilization of various alternative energy sources is a top priority. With the rising awareness of environmental protection, coupled with the zero pollution of solar energy and the inexhaustible advantages of solar energy, solar energy has become the focus of attention in related fields. Therefore, in places where there is sufficient sunshine, such as building roofs, squares, etc., it is becoming more and more common to install solar panels.
於太陽能模組中，其主要透過多個光伏轉換裝置組成，並再透過封裝材料將其固定。然而，太陽能模組中的封裝材料配置或組裝方式也會與太陽能模組的發電效率有關。例如，封裝材料可能會對光伏轉換裝置造成負面影響。對此，如何降低封裝材料對光伏轉換裝置所造成的負面影響，已成為相關領域中的一個重要課題。 In a solar module, it is mainly composed of a plurality of photovoltaic conversion devices and is fixed by a packaging material. However, the arrangement or assembly of the packaging materials in the solar module is also related to the power generation efficiency of the solar module. For example, packaging materials can have a negative impact on photovoltaic converters. In this regard, how to reduce the negative impact of packaging materials on photovoltaic converters has become an important issue in related fields.
本發明之一實施方式提供一種光伏轉換模組。光伏轉換模組包含隔離結構層，其中隔離結構層可透過其中的絕緣層阻絕透光玻璃至光伏轉換元件的金屬離子遷移路徑，以防止光伏轉換元件因鈉離子(Na+)遷移至其表面而產生的載子(電子-電洞對)複合現象，進而降低光伏轉換模組的功率損失(power loss)。 One embodiment of the present invention provides a photovoltaic conversion module. The photovoltaic conversion module comprises an isolation structure layer, wherein the isolation structure layer can block the metal ion migration path of the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the photovoltaic conversion element from migrating to the surface due to sodium ion (Na + ) The generated carrier (electron-hole pair) composite phenomenon, thereby reducing the power loss of the photovoltaic conversion module.
本發明之一實施方式提供一種光伏轉換模組，包含背板、光伏轉換元件、隔離結構層、第一封裝材料層與透光玻璃。光伏轉換元件設置於背板上。隔離結構層設置於光伏轉換元件之上，並包含基板與第一電絕緣層。第一電絕緣層設置於基板上。第一封裝材料層設置於隔離結構層上。透光玻璃設置於第一封裝材料層上。 One embodiment of the present invention provides a photovoltaic conversion module including a back sheet, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer, and a light transmissive glass. The photovoltaic conversion element is disposed on the backboard. The isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate and a first electrically insulating layer. The first electrically insulating layer is disposed on the substrate. The first encapsulating material layer is disposed on the isolation structure layer. The light transmissive glass is disposed on the first encapsulating material layer.
於部分實施方式中，隔離結構層更包含第一緩衝層。第一緩衝層設置於基板與第一電絕緣層之間，其中第一緩衝層之晶格常數介於基板之晶格常數與第一電絕緣層之晶格常數之間。 In some embodiments, the isolation structure layer further comprises a first buffer layer. The first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer.
於部分實施方式中，第一緩衝層之折射率介於基板之折射率與第一電絕緣層之折射率之間。 In some embodiments, the refractive index of the first buffer layer is between the refractive index of the substrate and the refractive index of the first electrically insulating layer.
於部分實施方式中，第一電絕緣層之折射率為N1，第一緩衝層之折射率為N2，基板之折射率為N3，且N1>N2>N3。 In some embodiments, the first electrically insulating layer has a refractive index of N1, the first buffer layer has a refractive index of N2, the substrate has a refractive index of N3, and N1>N2>N3.
於部分實施方式中，光伏轉換模組更包含第二封裝材料層與第三封裝材料層。第二封裝材料層設置於背板與光伏轉換元件之間。第三封裝材料層設置於光伏轉換元件與隔離 結構層之間，其中光伏轉換元件被包覆於第二封裝材料層與第三封裝材料層之間。 In some embodiments, the photovoltaic conversion module further includes a second encapsulation material layer and a third encapsulation material layer. The second encapsulating material layer is disposed between the backing plate and the photovoltaic conversion element. The third encapsulating material layer is disposed on the photovoltaic conversion element and isolated Between the structural layers, wherein the photovoltaic conversion element is coated between the second encapsulation material layer and the third encapsulation material layer.
於部分實施方式中，隔離結構層更包含第一緩衝層、第二電絕緣層與第二緩衝層。第一緩衝層設置於基板與第一電絕緣層之間，其中第一緩衝層之晶格常數介於基板之晶格常數與第一電絕緣層之晶格常數之間。第二電絕緣層設置於基板相對第一電絕緣層之一側。第二緩衝層設置於基板與第二電絕緣層之間，其中第二緩衝層之晶格常數介於基板之晶格常數與第二電絕緣層之晶格常數之間。 In some embodiments, the isolation structure layer further includes a first buffer layer, a second electrical insulation layer, and a second buffer layer. The first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer. The second electrically insulating layer is disposed on a side of the substrate opposite to the first electrically insulating layer. The second buffer layer is disposed between the substrate and the second electrically insulating layer, wherein a lattice constant of the second buffer layer is between a lattice constant of the substrate and a lattice constant of the second electrically insulating layer.
於部分實施方式中，第一電絕緣層之材料包含陶瓷、氧化物或其組合，其中氧化物包含四氧化二鎂鋁(MgAl2O4)。 In some embodiments, the material of the first electrically insulating layer comprises a ceramic, an oxide, or a combination thereof, wherein the oxide comprises magnesium aluminum pentoxide (MgAl 2 O 4 ).
本發明之一實施方式提供一種光伏轉換模組，包含背板、光伏轉換元件、隔離結構層、第一封裝材料層與透光玻璃。光伏轉換元件設置於背板上。隔離結構層設置於光伏轉換元件上，並包含基板、第一電絕緣層與第一緩衝層。第一電絕緣層，並設置於基板上。第一緩衝層設置於基板與第一電絕緣層之間，其中第一緩衝層之晶格常數介於基板之晶格常數與第一電絕緣層之晶格常數之間。第一封裝材料層設置於隔離結構層上。透光玻璃設置於第一封裝材料層上。 One embodiment of the present invention provides a photovoltaic conversion module including a back sheet, a photovoltaic conversion element, an isolation structure layer, a first encapsulation material layer, and a light transmissive glass. The photovoltaic conversion element is disposed on the backboard. The isolation structure layer is disposed on the photovoltaic conversion element and includes a substrate, a first electrically insulating layer and a first buffer layer. The first electrically insulating layer is disposed on the substrate. The first buffer layer is disposed between the substrate and the first electrically insulating layer, wherein a lattice constant of the first buffer layer is between a lattice constant of the substrate and a lattice constant of the first electrically insulating layer. The first encapsulating material layer is disposed on the isolation structure layer. The light transmissive glass is disposed on the first encapsulating material layer.
100、200、300‧‧‧光伏轉換模組 100, 200, 300‧‧‧PV conversion module
101‧‧‧背板 101‧‧‧ Backplane
102‧‧‧透光玻璃 102‧‧‧Light glass
104‧‧‧第一封裝材料層 104‧‧‧First encapsulating material layer
106‧‧‧第二封裝材料層 106‧‧‧Second packaging material layer
107‧‧‧第三封裝材料層 107‧‧‧ Third encapsulating material layer
108‧‧‧光伏轉換元件 108‧‧‧Photovoltaic conversion elements
109‧‧‧焊帶 109‧‧‧ soldering tape
110‧‧‧隔離結構層 110‧‧‧Isolated structural layer
112‧‧‧基板 112‧‧‧Substrate
114‧‧‧第一電絕緣層 114‧‧‧First electrical insulation
116‧‧‧第一緩衝層 116‧‧‧First buffer layer
118‧‧‧第二電絕緣層 118‧‧‧Second electrical insulation
120‧‧‧第二緩衝層 120‧‧‧Second buffer layer
122‧‧‧正離子 122‧‧‧ positive ions
124‧‧‧負離子 124‧‧‧negative ions
A‧‧‧區域 A‧‧‧ area
L‧‧‧虛線 L‧‧‧ dotted line
第1A圖繪示本發明第一實施方式之光伏轉換模組的剖視 示意圖。 1A is a cross-sectional view showing a photovoltaic conversion module according to a first embodiment of the present invention schematic diagram.
第1B圖繪示第1A圖之區域A的放大示意圖。 FIG. 1B is an enlarged schematic view showing a region A of FIG. 1A.
第2圖繪示本發明第二實施方式之光伏轉換模組的剖視示意圖。 2 is a cross-sectional view showing a photovoltaic conversion module according to a second embodiment of the present invention.
第3圖繪示本發明第三實施方式之光伏轉換模組的剖視示意圖。 3 is a cross-sectional view showing a photovoltaic conversion module according to a third embodiment of the present invention.
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.
有鑑於封裝材料可能會對光伏轉換元件造成負面影響，本發明之一實施方式提供一種光伏轉換模組包含隔離結構層，其中隔離結構層可透過其中的絕緣層阻絕自透光玻璃至光伏轉換元件的金屬離子遷移路徑，以防止光伏轉換元件因鈉離子(Na+)遷移至其表面而產生的載子(電子-電洞對)複合現象，進而降低光伏轉換模組的功率損失(power loss)。 In view of the fact that the packaging material may have a negative impact on the photovoltaic conversion element, an embodiment of the present invention provides a photovoltaic conversion module including an isolation structure layer, wherein the isolation structure layer can block the self-transmission glass to the photovoltaic conversion element through the insulation layer therein The metal ion migration path prevents the photoconductor (electron-hole pair) composite phenomenon of the photovoltaic conversion element due to the migration of sodium ions (Na + ) to its surface, thereby reducing the power loss of the photovoltaic conversion module. .
請參照第1A圖與第1B圖。第1A圖繪示本發明第一實施方式之光伏轉換模組100的剖視示意圖。第1B圖繪示第1A圖之區域A的放大示意圖。光伏轉換模組100包含背板101、光伏轉換元件108、焊帶109、隔離結構層110、第一封 裝材料層104、第二封裝材料層106、第三封裝材料層107與透光玻璃102，其中光伏轉換元件108可以是太陽能電池、太陽能發電裝置或是其他將光能轉換為電能之裝置。此外，為了方便說明，第1A圖於第二封裝材料層106與第三封裝材料層107之間繪示有虛線L。 Please refer to Figure 1A and Figure 1B. FIG. 1A is a cross-sectional view showing the photovoltaic conversion module 100 according to the first embodiment of the present invention. FIG. 1B is an enlarged schematic view showing a region A of FIG. 1A. The photovoltaic conversion module 100 includes a back plate 101, a photovoltaic conversion element 108, a solder ribbon 109, an isolation structure layer 110, and a first seal. The material layer 104, the second encapsulating material layer 106, the third encapsulating material layer 107 and the light transmissive glass 102, wherein the photovoltaic conversion element 108 can be a solar cell, a solar power generating device or other device for converting light energy into electrical energy. In addition, for convenience of description, FIG. 1A shows a broken line L between the second encapsulating material layer 106 and the third encapsulating material layer 107.
光伏轉換元件108設置於背板上，並互相電性耦接。焊帶109分別設置於相鄰的光伏轉換元件108之間，以將多個光伏轉換元件108串接。隔離結構層110設置於光伏轉換元件108之上，並包含基板112與第一電絕緣層114。第一電絕緣層114具有電絕緣特性，並設置於基板112上。第一封裝材料層104設置於隔離結構層110上。透光玻璃102設置於第一封裝材料層104上。此外，可選用的，第二封裝材料層106設置於背板101與光伏轉換元件108之間。第三封裝材料層107設置於光伏轉換元件108與隔離結構層110之間，其中光伏轉換元件108被包覆於第二封裝材料層106與第三封裝材料層107之間，亦即被包覆於虛線L的位置，以將光伏轉換元件108固定於光伏轉換模組100之中。第一封裝材料層104、第二封裝材料層106與第三封裝材料層107的材料可以是由乙烯-醋酸乙烯酯(EVA)構成或者包含乙烯-醋酸乙烯酯。 The photovoltaic conversion elements 108 are disposed on the backplane and electrically coupled to each other. Solder strips 109 are disposed between adjacent photovoltaic conversion elements 108 to connect the plurality of photovoltaic conversion elements 108 in series. The isolation structure layer 110 is disposed over the photovoltaic conversion element 108 and includes a substrate 112 and a first electrically insulating layer 114. The first electrically insulating layer 114 has electrical insulating properties and is disposed on the substrate 112. The first encapsulation material layer 104 is disposed on the isolation structure layer 110. The light transmissive glass 102 is disposed on the first encapsulating material layer 104. In addition, the second encapsulating material layer 106 is disposed between the back plate 101 and the photovoltaic conversion element 108. The third encapsulating material layer 107 is disposed between the photovoltaic conversion element 108 and the isolation structure layer 110, wherein the photovoltaic conversion element 108 is coated between the second encapsulation material layer 106 and the third encapsulation material layer 107, that is, coated At the position of the broken line L, the photovoltaic conversion element 108 is fixed in the photovoltaic conversion module 100. The material of the first encapsulating material layer 104, the second encapsulating material layer 106 and the third encapsulating material layer 107 may be composed of ethylene vinyl acetate (EVA) or ethylene vinyl acetate.
於此配置下，藉由第一電絕緣層114的電絕緣特性，隔離結構層110可阻絕或減少第一封裝材料層104與光伏轉換元件108之間的正離子遷移路徑，例如阻絕鈉離子(Na+)的遷移路徑，藉以防止或減少光伏轉換元件108因鈉離子(Na+)自透光玻璃102經由第一封裝材料層104遷移至其表面 而產生載子複合現象。舉例而言，如第1B圖所示，當有水氣進入第一封裝材料層104時，第一封裝材料層104會因水解反應而產生負離子124(例如，第一封裝材料層104中的EVA材料因水解反應產生帶負電的醋酸根離子團)，其中水解而產生的負離子124會導致由玻璃構成的透光玻璃102有正離子122析出的可能性(例如，透光玻璃102中的玻璃材料會因醋酸根離子團而析出帶正電的鈉離子)。接著，正離子122會受到負離子124吸引，而使得此正離子122朝光伏轉換元件108的方向行進。由於隔離結構層110位於第一封裝材料層104與光伏轉換元件108之間，因此，隔離結構層110可阻絕正離子122行進至光伏轉換元件108，以防止光伏轉換元件108因正離子122行進至其表面而產生載子(電子-電洞對)複合現象，藉以使光伏轉換模組100的功率損失可以有效被降低。換言之，藉由第一電絕緣層114的電絕緣特性，隔離結構層110可提供對於金屬離子遷移的抑制功效，以有效防止光伏轉換元件108因鈉離子遷移至其表面而產生的載子複合現象，使得光伏轉換模組100的功率損失可以有效被降低。 In this configuration, the isolation structure layer 110 can block or reduce the positive ion migration path between the first encapsulation material layer 104 and the photovoltaic conversion element 108, such as blocking sodium ions, by the electrical insulation properties of the first electrically insulating layer 114 ( The migration path of Na + ) is to prevent or reduce the phenomenon of carrier recombination of the photovoltaic conversion element 108 due to the migration of sodium ions (Na + ) from the transparent glass 102 to the surface via the first encapsulating material layer 104 . For example, as shown in FIG. 1B, when moisture enters the first encapsulating material layer 104, the first encapsulating material layer 104 generates negative ions 124 due to the hydrolysis reaction (eg, EVA in the first encapsulating material layer 104). The material generates a negatively charged acetate ion group due to the hydrolysis reaction, and the negative ions 124 generated by the hydrolysis cause the light-transmitting glass 102 composed of glass to have a possibility of precipitation of positive ions 122 (for example, the glass material in the light-transmitting glass 102). Positively charged sodium ions are precipitated due to acetate ion groups). Next, the positive ions 122 are attracted by the negative ions 124, causing the positive ions 122 to travel in the direction of the photovoltaic conversion element 108. Since the isolation structure layer 110 is located between the first encapsulation material layer 104 and the photovoltaic conversion element 108, the isolation structure layer 110 can block the positive ions 122 from traveling to the photovoltaic conversion element 108 to prevent the photovoltaic conversion element 108 from traveling to the positive ions 122. The surface thereof generates a carrier (electron-hole pair) composite phenomenon, so that the power loss of the photovoltaic conversion module 100 can be effectively reduced. In other words, by the electrical insulating property of the first electrically insulating layer 114, the isolation structure layer 110 can provide an inhibitory effect on the migration of metal ions to effectively prevent the carrier recombination phenomenon of the photovoltaic conversion element 108 due to the migration of sodium ions to the surface thereof. Therefore, the power loss of the photovoltaic conversion module 100 can be effectively reduced.
本實施方式中，第一電絕緣層114可藉由物理氣相沉積(physical vapor deposition；PVD)的方式，例如濺鍍(sputter deposition)，形成於基板112上，其中第一電絕緣層114之材料可以是無機物。進一步而言，第一電絕緣層114之材料可以是/包含陶瓷、氧化物或其組合，其中氧化物可以是/包含高穩定性之氧化物材料，例如四氧化二鎂鋁(MgAl2O4)。基板112之材料可以是乙烯-四氟乙烯共聚物(ethylene tetrafluoroethylene；ETFE)。此外，於部分實施方式中，第一電絕緣層114之折射率大於基板112之折射率。例如，當第一電絕緣層114之材料為四氧化二鎂鋁時，第一電絕緣層114之折射率為1.71，當基板112之材料為ETFE時，基板112之折射率為1.59。 In this embodiment, the first electrically insulating layer 114 can be formed on the substrate 112 by physical vapor deposition (PVD), such as sputtering deposition, wherein the first electrically insulating layer 114 The material can be inorganic. Further, the material of the first electrically insulating layer 114 may be/contain a ceramic, an oxide or a combination thereof, wherein the oxide may be/contain a highly stable oxide material, such as magnesium aluminum oxide (MgAl 2 O 4 ) ). The material of the substrate 112 may be ethylene tetrafluoroethylene (ETFE). Moreover, in some embodiments, the refractive index of the first electrically insulating layer 114 is greater than the refractive index of the substrate 112. For example, when the material of the first electrically insulating layer 114 is magnesium aluminum oxide, the refractive index of the first electrically insulating layer 114 is 1.71, and when the material of the substrate 112 is ETFE, the refractive index of the substrate 112 is 1.59.
此外，本實施方式中，隔離結構層110中的基板112為朝向背板101，而隔離結構層110中的第一電絕緣層114為朝向透光玻璃102。然而，應了解到，第1A圖所繪之隔離結構層110中的基板112與第一電絕緣層114之朝向僅為例示，而非用以限制本發明，本發明所屬技術領域中具有通常知識者，可依實際需要，彈性選擇基板112與第一電絕緣層114之朝向。例如，於其他實施方式中，隔離結構層110中的基板112可朝向透光玻璃102，而隔離結構層110中的第一電絕緣層114為朝向背板101。 In addition, in the embodiment, the substrate 112 in the isolation structure layer 110 faces the back plate 101 , and the first electrically insulating layer 114 in the isolation structure layer 110 faces the light transmissive glass 102 . However, it should be understood that the orientation of the substrate 112 and the first electrically insulating layer 114 in the isolation structure layer 110 depicted in FIG. 1A is merely illustrative, and is not intended to limit the present invention, and the general knowledge in the technical field to which the present invention pertains. The orientation of the substrate 112 and the first electrically insulating layer 114 can be flexibly selected according to actual needs. For example, in other embodiments, the substrate 112 in the isolation structure layer 110 may face the light transmissive glass 102 , and the first electrically insulating layer 114 in the isolation structure layer 110 faces the back plate 101 .
第2圖繪示本發明第二實施方式之光伏轉換模組200的剖視示意圖。本實施方式與第一實施方式的差異在於，本實施方式的隔離結構層110更包含第一緩衝層116。第一緩衝層116設置於基板112與第一電絕緣層114之間，其中第一緩衝層116之晶格常數介於基板112之晶格常數與第一電絕緣層114之晶格常數之間。同樣地，第一緩衝層116可藉由物理氣相沉積方式形成於基板112上，接著，第一電絕緣層114再形成於第一緩衝層116上。此外，第一緩衝層116之材料可以例如是氮化硼(boron nitride；BN)。 FIG. 2 is a cross-sectional view showing a photovoltaic conversion module 200 according to a second embodiment of the present invention. The difference between this embodiment and the first embodiment is that the isolation structure layer 110 of the present embodiment further includes the first buffer layer 116. The first buffer layer 116 is disposed between the substrate 112 and the first electrically insulating layer 114, wherein the lattice constant of the first buffer layer 116 is between the lattice constant of the substrate 112 and the lattice constant of the first electrically insulating layer 114. . Similarly, the first buffer layer 116 can be formed on the substrate 112 by physical vapor deposition, and then the first electrically insulating layer 114 is formed on the first buffer layer 116. Further, the material of the first buffer layer 116 may be, for example, boron nitride (BN).
於此配置下，由於第一緩衝層116之晶格常數介 於基板112之晶格常數與第一電絕緣層114之晶格常數之間，因此，所形成的第一電絕緣層114會因晶格匹配的關係而有較佳的品質。例如，所形成的第一電絕緣層114可具有更佳緻密性及附著性。再者，由於晶格匹配的關係，存在於第一電絕緣層114內的應力可以有效被降低，藉以降低第一電絕緣層114產生缺陷的可能性，使得隔離結構層110的製造良率提升。 In this configuration, due to the lattice constant of the first buffer layer 116 Between the lattice constant of the substrate 112 and the lattice constant of the first electrically insulating layer 114, the formed first electrically insulating layer 114 has a better quality due to the lattice matching relationship. For example, the first electrically insulating layer 114 formed may have better compactness and adhesion. Moreover, due to the lattice matching relationship, the stress existing in the first electrically insulating layer 114 can be effectively reduced, thereby reducing the possibility of defects of the first electrically insulating layer 114, so that the manufacturing yield of the isolation structure layer 110 is improved. .
此外，本實施方式中，第一緩衝層116之折射率介於基板112之折射率與第一電絕緣層114之折射率之間。進一步而言，第一電絕緣層114之折射率為N1，第一緩衝層116之折射率為N2，基板112之折射率為N3，且N1>N2>N3。換言之，第一緩衝層116除了提供晶格匹配上的緩衝效果外，也提供光學匹配上的增益效果。例如，當第一電絕緣層114之材料為四氧化二鎂鋁時，第一電絕緣層114之折射率為1.71，當第一緩衝層116之材料為氮化硼時，第一緩衝層116之折射率為1.65，當基板112之材料為ETFE時，基板112之折射率為1.59。 In addition, in the present embodiment, the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114. Further, the first electrically insulating layer 114 has a refractive index of N1, the first buffer layer 116 has a refractive index of N2, the substrate 112 has a refractive index of N3, and N1 > N2 > N3. In other words, the first buffer layer 116 provides a gain effect on optical matching in addition to providing a buffering effect on lattice matching. For example, when the material of the first electrically insulating layer 114 is magnesium aluminum pentoxide, the refractive index of the first electrically insulating layer 114 is 1.71, and when the material of the first buffer layer 116 is boron nitride, the first buffer layer 116 The refractive index is 1.65. When the material of the substrate 112 is ETFE, the refractive index of the substrate 112 is 1.59.
也就是說，由於第一緩衝層116之折射率介於基板112之折射率與第一電絕緣層114之折射率之間，且第一緩衝層116與第一電絕緣層114的折射率差值、第一緩衝層116與基板112的折射率差值皆小於基板112與第一電絕緣層114的折射率差值，因此，自光伏轉換模組200外部透過透光玻璃102朝光伏轉換元件108入射的光線可以減少其於隔離結構層110中發生的反射可能性。 That is, since the refractive index of the first buffer layer 116 is between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114, and the refractive index difference between the first buffer layer 116 and the first electrically insulating layer 114 The difference in refractive index between the first buffer layer 116 and the substrate 112 is smaller than the refractive index difference between the substrate 112 and the first electrically insulating layer 114. Therefore, the photovoltaic conversion element is transmitted from the outside of the photovoltaic conversion module 200 to the photovoltaic conversion element. The incident light 108 can reduce the likelihood of reflection occurring in the isolation structure layer 110.
換言之，於光伏轉換模組200中設置有隔離結構 層110的情況下，藉由第一緩衝層116之折射率介於基板112之折射率與第一電絕緣層114之折射率之間的配置，自光伏轉換模組200外部透過透光玻璃102朝光伏轉換元件108入射的光線仍可有效穿過隔離結構層110並進入光伏轉換元件108。 In other words, an isolation structure is disposed in the photovoltaic conversion module 200. In the case of the layer 110, the transparent filter glass 102 is transmitted from the outside of the photovoltaic conversion module 200 by the arrangement of the refractive index of the first buffer layer 116 between the refractive index of the substrate 112 and the refractive index of the first electrically insulating layer 114. Light incident on the photovoltaic conversion element 108 can still effectively pass through the isolation structure layer 110 and into the photovoltaic conversion element 108.
第3圖繪示本發明第三實施方式之光伏轉換模組300的剖視示意圖。本實施方式與第一實施方式的差異在於，本實施方式的隔離結構層110更包含第二電絕緣層118與第二緩衝層120。第二電絕緣層118設置於基板112相對第一電絕緣層114之一側，並具有電絕緣特性。第二緩衝層120設置於基板112與第二電絕緣層118之間，其中第二緩衝層120之晶格常數介於基板112之晶格常數與第二電絕緣層118之晶格常數之間。此外，第一電絕緣層114與第二電絕緣層118可由相同之製程形成，且其也可由相同之材料構成。同樣地，第一緩衝層116與第二緩衝層120可由相同之製程形成，且其也可由相同之材料構成。 FIG. 3 is a cross-sectional view showing the photovoltaic conversion module 300 according to the third embodiment of the present invention. The difference between the present embodiment and the first embodiment is that the isolation structure layer 110 of the present embodiment further includes the second electrically insulating layer 118 and the second buffer layer 120. The second electrically insulating layer 118 is disposed on one side of the substrate 112 opposite to the first electrically insulating layer 114 and has electrical insulating properties. The second buffer layer 120 is disposed between the substrate 112 and the second electrically insulating layer 118, wherein the lattice constant of the second buffer layer 120 is between the lattice constant of the substrate 112 and the lattice constant of the second electrically insulating layer 118. . In addition, the first electrically insulating layer 114 and the second electrically insulating layer 118 may be formed by the same process, and they may also be composed of the same material. Similarly, the first buffer layer 116 and the second buffer layer 120 may be formed by the same process, and they may also be composed of the same material.
本實施方式中，於隔離結構層110中，基板112的相對兩側分別設置有第一電絕緣層114與第二電絕緣層118。因此，隔離結構層110所提供之阻絕金屬離子遷移路徑的效果進一步提升，使得隔離結構層110可提供更佳對於金屬離子遷移的抑制功效，以更有效防止光伏轉換元件108因鈉離子(Na+)遷移至其表面而導致的載子複合現象，也因此，光伏轉換模組300的功率損失可以有效被降低。 In the embodiment, in the isolation structure layer 110, the first electrically insulating layer 114 and the second electrically insulating layer 118 are respectively disposed on opposite sides of the substrate 112. Therefore, the effect of the barrier structure layer 110 providing a barrier to metal ion migration is further enhanced, so that the isolation structure layer 110 can provide better suppression of metal ion migration to more effectively prevent the photovoltaic conversion element 108 from being sodium ions (Na + The phenomenon of carrier recombination caused by migration to its surface, and therefore, the power loss of the photovoltaic conversion module 300 can be effectively reduced.
舉例而言，依據IEC62804之規範，於電勢誘發功率衰減(PID)的測試中，在光伏轉換模組沒有設置隔離結構 層的情況下，光伏轉換模組的功率損失為大於30%，且被分類至C級別(C class)。於光伏轉換模組設置有隔離結構層的情況下，光伏轉換模組的功率損失為小於5%，且可被分類至A級別(A class)。 For example, according to the specification of IEC62804, in the test of potential induced power attenuation (PID), no isolation structure is provided in the photovoltaic conversion module. In the case of layers, the power loss of the photovoltaic converter module is greater than 30% and is classified to the C class. In the case where the photovoltaic conversion module is provided with an isolation structure layer, the power loss of the photovoltaic conversion module is less than 5%, and can be classified into the A class.
綜上所述，本發明之光伏轉換模組包含隔離結構層，其中隔離結構層可透過其中的絕緣層阻絕自透光玻璃至光伏轉換元件的金屬離子遷移路徑，以防止光伏轉換元件因鈉離子(Na+)遷移至其表面而導致的載子複合現象，進而降低光伏轉換模組的功率損失。此外，隔離結構層可以更包含緩衝層。緩衝層除了使隔離結構層中各層之間的晶格常數更接近外，也提供隔離結構層光學匹配的效果，使得光伏轉換模組於設置有隔離結構層的情況下，自光伏轉換模組外部透過透光玻璃朝光伏轉換元件入射的光線仍可有效穿過隔離結構層並進入光伏轉換元件。 In summary, the photovoltaic conversion module of the present invention comprises an isolation structure layer, wherein the isolation structure layer can block the metal ion migration path from the transparent glass to the photovoltaic conversion element through the insulating layer therein to prevent the photoelectric conversion element from being affected by sodium ions. The (Na + ) migration phenomenon to the surface causes the carrier recombination phenomenon, thereby reducing the power loss of the photovoltaic conversion module. Furthermore, the isolation structure layer may further comprise a buffer layer. In addition to making the lattice constant between the layers in the isolation structure layer closer, the buffer layer also provides an optical matching effect of the isolation structure layer, so that the photovoltaic conversion module is provided with an isolation structure layer, and is external to the photovoltaic conversion module. Light incident through the light transmissive glass towards the photovoltaic conversion element can still effectively pass through the isolation structure layer and into the photovoltaic conversion element.
雖然本發明已以多種實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described above in terms of various embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.
100‧‧‧光伏轉換模組 100‧‧‧PV conversion module
101‧‧‧背板 101‧‧‧ Backplane
102‧‧‧透光玻璃 102‧‧‧Light glass
104‧‧‧第一封裝材料層 104‧‧‧First encapsulating material layer
106‧‧‧第二封裝材料層 106‧‧‧Second packaging material layer
107‧‧‧第三封裝材料層 107‧‧‧ Third encapsulating material layer
108‧‧‧光伏轉換元件 108‧‧‧Photovoltaic conversion elements
109‧‧‧焊帶 109‧‧‧ soldering tape
110‧‧‧隔離結構層 110‧‧‧Isolated structural layer
112‧‧‧基板 112‧‧‧Substrate
114‧‧‧第一電絕緣層 114‧‧‧First electrical insulation
A‧‧‧區域 A‧‧‧ area
L‧‧‧虛線 L‧‧‧ dotted line
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| JP3267738B2 (en) * | 1993-05-07 | 2002-03-25 | キヤノン株式会社 | Solar cell module |
| US7230269B2 (en) * | 2005-06-13 | 2007-06-12 | The Trustees Of Princeton University | Organic photosensitive cells having a reciprocal-carrier exciton blocking layer |
| JP2007266095A (en) * | 2006-03-27 | 2007-10-11 | Mitsubishi Heavy Ind Ltd | Photoelectric conversion cell, photoelectric conversion module, photoelectric conversion panel and photoelectric conversion system |
| TWI398959B (en) * | 2008-11-14 | 2013-06-11 | Hon Hai Prec Ind Co Ltd | Solar cell |
| US8252624B2 (en) * | 2010-01-18 | 2012-08-28 | Applied Materials, Inc. | Method of manufacturing thin film solar cells having a high conversion efficiency |
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| CN102339872B (en) * | 2011-09-28 | 2013-06-05 | 湖南红太阳新能源科技有限公司 | Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film |
| CN202678353U (en) * | 2012-04-28 | 2013-01-16 | 法国圣戈班玻璃公司 | Cover plate, solar glass and photovoltaic device |
| JP2014067869A (en) * | 2012-09-26 | 2014-04-17 | Nobuyuki Akiyama | Manufacturing method of hetero-epitaxial single crystal, manufacturing method of heterojunction solar cell, hetero-epitaxial single crystal, and heterojunction solar cell |
| GB2509760B (en) * | 2013-01-14 | 2015-07-15 | Dyson Technology Ltd | A Fan |
| JP2014157874A (en) * | 2013-02-14 | 2014-08-28 | Mitsubishi Electric Corp | Solar battery module and method of manufacturing the same |
| CN103254802B (en) * | 2013-03-19 | 2015-06-03 | 江苏鹿山光伏科技有限公司 | EVA packaging adhesive film for resisting potential-induced degradation of photovoltaic module |
| CN103296094A (en) * | 2013-05-22 | 2013-09-11 | 吴江市德佐日用化学品有限公司 | Polycrystalline silicon solar cell antireflection film and manufacturing method thereof |
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| CN103633159B (en) * | 2013-12-18 | 2018-02-16 | 上饶光电高科技有限公司 | A kind of preparation method of solar battery antireflective film |
| CN204067387U (en) * | 2014-09-04 | 2014-12-31 | 西安普瑞新特能源有限公司 | A kind of photovoltaic module of anti-PID effect |
| CN104465828A (en) * | 2014-11-13 | 2015-03-25 | 常熟阿特斯阳光电力科技有限公司 | Solar cell module and manufacturing method of solar cell module |
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