WO2017027566A1 - Target expansion rate control in an extreme ultraviolet light source - Google Patents

Target expansion rate control in an extreme ultraviolet light source Download PDF

Info

Publication number: WO2017027566A1
Authority: WO; WIPO (PCT)
Prior art keywords: radiation; target material; target; energy; modified
Prior art date: 2015-08-12

Application number

PCT/US2016/046301

Other languages

English (en)

French (fr)

Inventor

Robert Jay RAFAC

Daniel Jason RIGGS

Original Assignee

Asml Netherlands B.V.

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-08-12

Filing date

2016-08-10

Publication date

2017-02-16

2015-08-12 Priority claimed from US14/824,147 external-priority patent/US9713240B2/en

2015-08-12 Priority claimed from US14/824,141 external-priority patent/US9820368B2/en

2016-08-10 Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.

2016-08-10 Priority to KR1020247003169A priority Critical patent/KR20240015174A/ko

2016-08-10 Priority to JP2018506293A priority patent/JP6744397B2/ja

2016-08-10 Priority to CN201680047368.0A priority patent/CN108353489B/zh

2016-08-10 Priority to KR1020187006976A priority patent/KR102631831B1/ko

2017-02-16 Publication of WO2017027566A1 publication Critical patent/WO2017027566A1/en

Links

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Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Definitions

the disclosed subject matter relates to controlling an expansion rate of a target material for a laser produced plasma extreme ultraviolet light source.
EUV light for example, electromagnetic radiation having wavelengths of around 50 am or less (also sometimes referred to as soft x-rays), and including light at a wavelength of about 13 iini, can be used in photolithography processes to produce extremel small features in substrates, for example, silicon wafers.
electromagnetic radiation having wavelengths of around 50 am or less (also sometimes referred to as soft x-rays), and including light at a wavelength of about 13 iini, can be used in photolithography processes to produce extremel small features in substrates, for example, silicon wafers.
Methods to produce EUV light include, but are not necessarily limited to, converting a material that has an element, for example, xenon, lithium, or tin, with an emission line in the EUV range in a plasma state.
a plasma state often termed laser produced plasma (“LPP")
the required plasma can be produced by irradiating a target material, for example, in the form of a droplet, plate, tape, stream, or cluster of material, with an amplified light beam that can be referred to as a drive laser.
the plasma is typically produced in a sealed vessel, for example, a vacuum chamber, and monitored using various types of metrology equipment.
a method includes providing a target material that comprises a component that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first beam of radiation toward the target material to deliver energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second beam of radiation toward the modified target, the second beam of -radiation converting at least part of the modified target to plasma that emits EUV light; measuring one or more characteristics associ ated with one or more of the target material and the modified target relative to the first beam of radiation; and controlling an amount of radiant exposure deli vered to the target material from the first beam of radiation based on the one or mote measured characteristics to within a predetermined range of energies.
EUV extreme ultraviolet
Implementations can include one or more of the following features.
the one or more character stics associated with one or more of the ta et material and the modified target can be measured by measuring an energy of the first beam of radiation.
the energy of the first beam of radiation can be measured by measuring the energy of the first beam of radiation reflected from an optically reflective surface of the target material.
the energy of the first beam of radiation c an be measured by measuring an energy of the first beam of radiation directed toward the target material.
the energy of the first beam of radiation can be measured by measuring a spatially integrated energy across a direction perpendicular to a direction of propagation of the first beam of radiation.
the first beam of radiation can be directed toward the target material by overlapping the target material with an area of the first beam of radiati on that encompasses its eonfbcal parameter.
the eonfbcal parameter can be greater than 1.5 mm.
the one or more characteristics associated with one or more of the target material and the modified target can be measured by measuring a position of the target material relative to a target position.
The. target position can be coincident with a beam waist of the first beam of radiation.
the first beam of radiation can be directed along a first beam axis , and the position of the target materia! can be measured along a direction that is parallel with the first beam axis.
the target position can be measured relative to a primary focus of a collector device that co l lects the emitted EUV light.
the -position of the target material can be measured by measuring the position of the target material along two or more non-parallel directi ons.
the one or more characteristics associated with one or more of the targe material and the modified target can be measured by detecting a size of the modified target before the second beam of radiation converts at least part of the modified target to plasma.
the one or more characteristics associated with one or more of the target material and the modified target can be measured by estimating an expansion rate of the modified target.
the amount of radiant exposure deli vered to the target material from the first beam of radiation can be controlled by controlling an expansion rate of the modifi ed target,
the amount of radiant exposure delivered to the target materia! from the first beam of radiation cm be controlled by determining whether a feature of t he first beam of radiation should be adjusted based on the one or more measured characteristics. The determination that the feature of the first beam of radiation should be adjusted can be performed, while the one or more characteristics are measured.
one or more of an energy content of a pulse of the first beam of radiation and an area of the first beam of radiation that interacts with the target material can be adjusted.
the energy content of the pulse of the first beam of radiation can he adjusted by adjusting one or more of a pulse width of the first beam of radiation; a duratio of the pulse of the first beam of radiation; and an average power within the poise of the first beam of radiation.
the first beam of radiation can be directed toward the target material by directing pulses of first radiation toward the target material; the one or more characteristics can be measured b measuring the one or more characteristics for each pulse of first radiation; and it can be determining whether the feature of the first beam of radiation should be adjusted by determining for each pulse of first radiation whether the feature should be adj usted.
the radiant exposure delivered to the target material from the first beam of radiation can be controlled by controlling the radiant exposure delivered to the target materia! from the first beam of radiation while at least a portion of the emitted EUV light is exposing a wafer.
the target material can be provided by providing a droplet of target material; and the geometric distribution of the target material can be modified by transfomiing the droplet of the target material into a disk shaped volume of molten metal.
the target material droplet can be transformed into the disk shaped volume in accordance wi th an expansion rate.
the method can also include collecting at least a portion of the emitted EUV light; and directing the collected EUV light toward a wafer to expose the wafer to the EUV light.
the one or more characteristics can be measured by measuring at least one characteristic for each pulse of the first beam of radiation directed toward the target material.
the first beam of radiation ca be directed toward the target material so that a part of the target material is converted to plasma that emits EUV light, and less EUV light is emitted from, the plasma converted from the target material than is emitted from the plasma converted from the modified target, and the pre-dominant action o the target material is the
the geometric distribution of the target material can be modified by transforming a. shape of the target material into the modified target including expanding the modified target along at least one axis according to an expansion rate.
the amount of radiant exposure delivered to the target material can be controlled by controlling the expansion rate of the target material into the modified target.
the modified target can be expanded along the at Least one axis, which is not parallel wi th the optical axis of the second beam of radiation.
the one or more characteristics associ ated with one or more of the tar get, material and die modified target can be measured by measuring a number of photons reflected from the modified target.
the number of photons reflected from the modified target can be measured by measuri ng the number of photons reflected from the modified target as a function of how many photons strike the. targe material.
the first beam of radiation can be directed toward the target material by directing poises of first radiation toward the target material; and the second beam of radiation can be directed toward the modified target by directing pulses of second radiation toward the modified target.
the first beam of radiation can be directed by directing the first beam of radiation through a first set of one or more optical ampli bombs ; and the second beam of radiation can be directed by directing the second beam of radiation through a second set of one or more optical amplifiers; wherein at least one of the optical amplifiers in the first set is in the second set.
the one or more characteristics associated wi th one or more of the target material and the modified target can be measured by measuring an energy of the first beam of radiation directed toward the target material; and the amount of radiant exposure delivered to the target material can be controlled by adjusting an amount of energy directed to the target material from the first beam of radiation based on the measured energy.
the first beam of radiation can be directed toward the target material by overlapping the target material with an area of the first beam of radiation that encompasses its eonfocal parameter; and the eonfocal parameter can be less than or equal to 2 mm.
the amount of en ergy directed to the target material from the first beam of radiati on can be adjusted by adjusting a property of the first beam of radiation.
the amount of radiant exposure delivered to the target material from the first beam of radiation can be controlled by adjusting one or more of: an energy of the first beam of radiation just before the first beam of radiation delivers the energy to the target material; a position of the target material; and a region of the target material that interacts with the first beam of radiation.
the first beam of radiation can be directed by directing the first beam of radiation through a. first set. of optical components including one or more first optical amplifiers; and the second beam of radiation can be directed by directing the second beam of radiation through, a second set of optical components including one or more second optical amplifiers; wherein the first set of optical components are distinct from and separated from the second set of optical components.
an apparatus in other general aspects, includes a chamber thai defines an initial target location that receives a first beam of radiation and a target location that receives a second beam of radiation; a target material delivery system configured to provide target material to the initial target location, the target material comprising a material that emits extreme ultraviolet (EUV) light when converted to plasma; an optical source configured to produce the first beam of radiation and the second beam of radiation; and an optica! steering system.
the optical steering system is configured to: direct the first beam of radiation toward the initial target location to deliver energy to the target material to modify a geometric distribution of the target material to form a modified target and direct the second beam of radiation toward the target location to convert at least part of the modified target to plasma that emits EUV light.
the apparatus includes a measurement system that measures one or more characteristics associated wi t one or more of the target material and the modified target relative to the first beam of radiation; and a control system connected to the target material delivery system, the optical source, the optical steering system, and the measurement system.
the control system is configured to receive the one or more measured characteristics from the measurement, system and to send one or more signals to the optical source to control an amount of radiant exposure delivered to the target material from the first beam of radiation based on the one or more measured characteristics.
the optical steermg system can include a focusing apparatus configured to focus the first beam of radiation at or near the initial target location and to focus the second beam of radiation at or near the target location.
the apparatus can include a beam adjustment system, wherein the beam adjustment system is connected to the optical source and the control system, and the control system is configured to send one or more signals to the optical source to control the amount of energ delivered to the target material by sending one or more signals to the beam adjustment system, the beam adjustment system configured to adjust one or more features of the optical source to ther eby maintain the amount o ener gy delivered to the target ma terial.
the beam adjustment system can include a pulse width adjustment system coupled to the first beam of radiation, the pulse width adjustment system configured to adjust a pulse width of the pulses of the first beam of radiation.
the pulse width adjustment system can include an electro-optic modulator.
the beam adjustment system can include a ptiise power adjustment system coupled to the first beam of radiation, the pulse power adjustment system configured to adjust an average power within pulses of the first beam of radiation.
the pulse power adjustment system can include an acousto-optie modulator.
the beam adjustment system can be configured to send one or more signals to the optical source to control the amount of energy directed to the target material by sending one or more signals to the beam adjustment system, the beam adjustment system configured to adjust one or more features of the optical source to thereby control the amount of energy directed to the target material.
the optical source can include a first set of one or more optical amplifiers through which the first beam of radiation is passed; and. a second set of one or more optical amplifiers through which the second beam of radiation is passed, at least one of the optical amplifiers hi the first set is in the second set.
the measurement system can measure an energy of the first beam of radiation as it is directed toward the initial target location; and the control system can be configured to receive the .measured energy from the measurement system, and to send one or more signals to the optical source to control an amount of energy directed to the target material from the first beam of radiation based on the measured energy.
a. method includes providing a target material that includes a component thai emits extreme ultraviolet (EUV) light when converted to plasma; directing a first beam of radiation toward the target material to deliver energy to the target material to modif a geometric distribution of the target material to form a modified target; directing a second beam of radiation toward the modified target, the second beam of radiation converting at least part of the modified target to plasma that emi ts EUV light; controlling a radiant exposure delivered to the target material from the first beam of radiation to within a
EUV extreme ultraviolet
Implementations can include one or more of the following features.
the first beam of radiation can be directed by directing the first beam of radiation through a first set o optical components including one or more first optica! amplifiers; and the second beam of radiation can be directed by directing the second beam -of radiation through a second set of optical components including one or more second optical amplifiers.
the first set of optical components can be distinct from and separated from the second set of optical components.
the first beam of radiation can be directed by directing the first beam of radiation through a first set of one or more optical amplifiers; and the second beam of radiation can be directed by directing the second beam of radiation through a second set of one or more optical amplifiers; wherein at least one of the optical amplifiers in the first set is in the second set.
the target material can be provided by providing a droplet of target material; and the geometric distribution of the target material car be modifi ed by transforming the droplet of target material into a disk shaped volume of molten metal ha ving a substantially planar surface.
the target material can be provided by providing a droplet of target material; and the geometric distribution of the target material can be modified by transforming the droplet of target material into a mist shaped volume of molten metal particles.
the target material can be transformed into the modified target in accordance with an expansion rate.
the radiant exposure deli vered to the target material from the first beam of radiation can be controlled by measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first beam of radiation; and maintaining an amount of radiant exposure delivered to the target material from the first beam of radi atio based on the one or more measured characteristics to within a
the radiant exposure delivered to the target material from the first beam of radiation can be controlled by estimating an expansio rate of the modified target-
the radiant exposure deli vered to the target material from the first beam of radiation can be controlled by maintaining an expansion rate of the modified target.
the radiant exposure delivered to the target material from the first beam of radiation can be controlled by determining whether a feature of the first beam of radiation should be adjusted.
the radiant exposure delivered to the target material from the first beam of radiation can be controlled by adjusting the feature of the first beam of radiation by adj sting one or more of an energy content of each pulse of the first beam of radiation and an area of the first beam of radiation that interacts with the target material.
the energy content of each pulse of the first beam of radiation can be adjusted by adjusting one or more of: a width of each pulse of the first beam of radiation, a duration of each pulse of the first beam of radiation, and a. power of each pulse of the first beam of radiation.
the power of the EU V light emitted from the plasma can be stabilized by stabilizing the power of the EUV light while at least a portion of the EU V light emitted from the plasma is exposing a wafer.
the method can also include collecting at least a portion of the emitted EUV light; and directing the collected EUV light toward a wafer to expose the wafer to the EUV light.
the geometric distribution of the target material can be modified by transforming a shape of the target material into the modified target including expanding the modified target along at least one axis according to an expansion rate.
the radiant exposure deli vered to the target material from the first beam of radiation can be controlled by adjusting a property of the first beam of radiation.
the property of the first beam of radiation can be adjusted by adjusting an energy of the first beam of radiation.
an apparatus in other genera! aspects, includes a chamber that defines an initial target location that receives a first beam of radiation and a target location that receives a second beam of radiation; a target material delivery system configured to provide target material to the initial target location, the target material comprising a material that emits extreme
EUV ultraviolet
the optical steering system is configured to; direct the first beam of radiation toward the initial target location to deliver energy to the target material to modify a geometric
the apparatus includes a control system connected to the target material delivery system, the optica! source, and the optical steering system, and configured to send one or more signals to the optical source to control an amount of radiant exposure delivered to the target material from the first beam of radiation to within a predetermined range of radiant exposures to thereby stabilize a power of EUV light emitted from the plasma
implementations can include one or more of the following features,
the apparatus can also include a measurement system that measures one or more characteristics associated with one or more of the target material and the modified target relative to the first beam of radiation; wherein the control system is connected to the measurement system.
the apparatus can also include a beam adjustment system, wherein the beam adjustment system is connected to the optical source and the control system, mid the control system is configured to send one or more signals to th optica! source to control the amount of radiant exposure delivered to the target .material by sending one or more signals to the beam adjustment system, the beam adjustment system configured to adjust one or more features of the optical source to thereby control the amount of radiant exposure delivered to the target material
Fig. 1 is a block diagram, of a laser produced plasma extreme ultraviolet light source including an optical source that produces a first beam of radiation directed to a target material and a second beam of radiation directed to a modified target to convert part of the modified target to plasma that emits Eli V light;
Fig. 2 is schematic diagram showing the first beam of radiation directed to a first target location and the second beam of radiation directed to a second target location;
Fig. 3 A is a block diagram of an exemplary optical source for use in the light source of Fig. 1 ;
Figs, 3B and 30 are block diagrams of, respectively, an exemplary beam path combiner and an exemplary beam path separator that can be used i the optical source of Fig. ⁇ ,
Figs. 4 A. and 4B are block diagrams of exemplary optica! amplifier systems that can be used in the optica! source of Fig. 3 A ;
Fig. 5 is a block diagram of exemplary optical amplifier systems that can be used in the optical source of Fig. 3 A;
Fig, 6 is a schematic diagram showing another implementation of the first beam, of radiation directed to the first target location on and the second beam of radiation directed to the second target location;
Figs. 7 A and 7B are schematic diagrams showing implementations of the first beam of radiation directed to the first target location ;
Figs. 8A.-8C and 9A-9C show schematic diagrams of various implementations of a measurement system that measures at least one characteristic associated with any one or more of a target material, a modified target, and the first beam of radiation;
Fig. .10 is a block diagram of an exemplary control system of the light source of Fig. i;
Fig. 1 l is a flow chart of an exemplary procedure performed by the Sight source
Fig. 12 is a flow chart of an exemplary procedure performed by the light source for stabilizing a power of EUV light emitted from the plasma by controlling the radiant exposure delivered to the target material from th first beam of radiation;
Fig. 13 is a block diagram of an exemplary optical source that produces first and second beams of radiation and an exemplary beam delivery system that modifies the first and second beams of radiation and focuses the first and second beams of radiation to respective first and second target locations.
an interaction between a target material 120 and a first beam of radiation 1 10 causes the target material to deform and geometrically expand to thereby form a modified target 121.
the geometric expansion rate of the modified target 121 is controlled in a manner that increases the amount of usable EUV light 30 converted from the plasm due to the interaction between the modified target 121 and a second beam of radiation 1 15.
the amount of usable EUV light 130 is the amount of EUV light 130 that can be harnessed for use at an optical apparatus 145.
the amount of usable EUV light 130 can depend on aspects such as the band width or center wavelength of the optical components that are used to harness the EUV light 130.
the control of the geometric expansion rate of the modified target 121 enab les control of a size or geometric aspect of the modi tied target 21 at the time that the modi tied target 121 interacts with the second beam of radiation 115.
adjustment of the geometric expansion rate of the modi fied target 12.1 adj usts a density of the modified target 121 at the time that it interacts with the second beam of radiation 1 15; because the density of the modified target 121 at the time that the modified target 121 interacts with the second beam of radiation 1 15 impacts a total amount of radiation absorbed by the modified target 121 and a range over which such radiation is absorbed.
the EUV light 130 would not be able to escape from the modified target 121 and thus the amount of usable EUV light 130 can drop.
adjustment of the geometric expansion rate of the modified target 121 adjusts a surface area of the modified target 121 at the time that the modi fied target 121 interacts with the second beam of radiation ! 15.
the overall amount of usable BUY light 130 produced can be increased or controlled by controlling the expansion rate of the modified target 121.
the size of the modi fied target 121 and its rate of expansion are dependent upon a radiant exposure applied to the target material 120 from the first beam of radiation 1 10. the radiant exposure being an amount of energy that is delivered to an area of the target material 120 by the first beam of radiation 110.
the expansion rate of the modified target 121 can be maintained or controlled by maintaining or controlling the amount of energy that is delivered to the target material 120 per unit area.
the amount of energy delivered to the target material 120 depends on the energy of the first beam of radiation 1 1 just before it impinges upo the surface of the target material
the energy of the pulses in the first beam of radiation 110 can he determined by integrating the laser pulse signals measured by a fast photodetector.
the detector can be a photoelectroraagnetic (FEM) detector that is appropriate for long- wavelength infrared
LW IR ultraviolet IR
IR near-infrared
silicon diode for visible or near-IR radiation.
the expa sion rate of the modified target 121 depends, at least in part, on the amount of energy in the pulse of the first beam of radiation 110 that is intercepted by the target material 120,
the target material 120 is assumed to be always the same size and placed in a waist of th focused first beam of radiatio 1 30.
the target material 120 may have a small but. mostly constant axial position offset relative to a beam waist of the first beam of radiation 110. If all of these factors remain constant, then onefactor that controls the expansion rate of the modified target 121 is the pulse energy of the first beam of radiation 110 for pulses of the first beam of radi ation having a duration of a few to TOO ns.
Another factor that can control the expansion rate of the modified target 121 if the pulses of the first beam of radiatio 110 have a duration at or below 100 ns is the instantaneous peak power of the first beam of radiation 1 10.
Other factors can control the expansion rate of the modified target 121 if the pulses of the first beam of radiation 1 10 have a duration that is shorter, for example, on the order of picoseconds (ps). as discussed below.
a optical source 1 5 (also referred to as a drive source or a drive laser) is used to drive a laser produced plasma (LPP) extreme ultraviolet (EUV) light source 100.
the optical source 105 produces a first beam of radiation 1 10 provided to a first target location 1 1.1 and a second beam of radiation i 15 provided to a second target location I 16. Hie first and second beams of radiation 1 10. 1 15 cm be poised amplified light beams.
the first target location 11 1 receives a target material 120, such as tin, from a target material supply system 125.
a target material 120 such as tin
An interaction between the first beam of radiation 1 10 and the target material 120 delivers energy to the targe material 120 to modify or change (for example, deform) its shape so that the geometric distributio of the target material 120 is deformed into a modified target 12.1.
the target material 120 is generally directed from the target material supply system 125 along the -X direction or along a direction that places the target material 120 within the first tar get location 1 1 1 ,
the modified target 121 can continue to move along the -X direction in addition to moving along another direction such as a direction that is parallel with the Z direction.
the modified target 121 moves away from the first target location i l l, its geometric distribistion continues to defonn until the modified target 121 reaches the second target location 116.
An interaction between the second beam of radiation 1 5 and the modified target 121 (at the second target location 1 16) converts at least pari of the modified target 121 into plasma 129 that emits EUV light or radiation 130.
a light collector system (or light collector) 135 collects and directs the EUV light 130 as collected EUV light 140 toward an optical apparatus 145 such as a lithography tool.
the first and second target locations 1 1 1 , 1 6 and the light collector 135 can be housed within a chamber 165 that provided a controlled environment suitable for production of EUV light 140.
the target material 120 it is possible for some of the target material 120 to be converted into plasma when it interacts with the first beam of radiation 1 1.0 and thus it is possible that such plasma can emit EUV radiation. H owever, the properties of the first beam of radiation i 10 are selected and controlled so that the predominant action on the target material 120 by the first beam of radiation 1 10 is the deformation or modificatio of the geometric distribution of the target material 120 to form the modified target 121.
the beam delivery system 150 includes optical steering components 152 arid a focus assembly 156 that focuses the first or second beam of radiation 1 10, 1 15 to respective first and second focal regions.
the first and second focal regions can overlap with the first target location 1 1 and the second target location 116, respectively.
the optical components 152 cart include optical elements, such as lenses and or .mirrors, which direct the beam of radiation 1 1 , 115 by refraction, and/or reflection.
the beam delivery system 150 can also include elements ' that control and/or move the optical components 152.
the beam delivery system 150 can include actuators that ate controllable to cause optical elements within the optical components 1 2 to move.
the focus assembly 156 focuses the first beam of radiation
the focus assembly 156 causes the first beam of radiation 1 10 to converge as it propagates toward the first focal region 210 in a first axial direction 212, which is the general direction of propagation of the first beam of radiation 1.10.
the first axial direction 212 extends along a plane that is defined b the X-Z axes. In this example, the first axial direction 212 is parallel with or nearly parallel with the Z direction, but it can be along an angle relative to the Z. In the absence of a target material 120, the first beam of radiation 110 diverges as it propagates away from the first focal region 210 in the first axial direction 212.
the focus assembly 156 focuses the second beam of radiation 1 15 so that the diameter D2 of the second beam of radiation 115 is at a minimum in the second focal region 215.
the focus assembly causes the second beam of radiation ! 15 to converge as it propagates toward the second focal region 215 in a second axial direction 217, which is the general direction of propagation of the second beam of radiation 1 15.
the second axial direction 217 also extends along a plane that is defined by the X-Z axes, and m this example, the second axial direction 217 is parallel with or nearly parallel with the Z direction.
⁇ the absence of a modified target 121 cur the second beam of radiati on 115 di verges as it propagaies away from the second focal region 215 along the second axial direction 217.
the EUV light source 300 also includes one or more
the measurement system 155 can measure one or more characteristics within the light source 100.
the one or more characteristics can be characteristics associated with the target material 120 or the modified target 121 relative to the first beam of radiation 1 10,
the one or more characteristics can be a pulse energy of the first beam of radiation 110 that is directed toward the target material 120.
the control system .160 is configured to receive the one or more measured characteristics from the measurement system so that it can control how the first beam of radiation 1 10 interacts with the target material 120.
the control system 160 can be configured to maintain an amount of energy delivered to the target material 120 from the first beam of radiation 1 10 to within a predetermined range of energies.
the control system 160 can be configured to control an amount of energy directed to the target material 120 from the first beam of radiation 110.
the beam adjustment system 180 is a system that includes components within or components that adjust components within the optical source 105 to thereby control properties (such as a pulse width, pulse energy, instantaneous power within the pulses, or an a verage power within the pulses) of the first beam of radiation 1 10,
the optical source 105 includes first optical amplifier system 300 that includes a series of one or more optical amplifiers through which the first beam of radiation 110 is passed, and a second optical amplifier system 305 that includes a series of one or more optical amplifiers through which the second beam of radiation 1 15 is passed.
first optical amplifier system 300 that includes a series of one or more optical amplifiers through which the first beam of radiation 110 is passed
second optical amplifier system 305 that includes a series of one or more optical amplifiers through which the second beam of radiation 1 15 is passed.
One or more amplifiers from the first system 300 can be in the second system 305; or one or more amplifiers in the second system 305 can be in the first system 300.
the first optical amplifier system 300 is entirely separate from the second optical amplifier system 305.
the optical source 105 can include a first light generator 310 that produces a first pulsed light beam 31 1 and a second light generator 31 that, produces a second pulsed light beam 316.
the light generators 310, 315 can each be, for example, a laser, a seed laser such as a master oscillator, or a lamp.
An exemplary light generator that can be used as the light generator 310, 315 is a Q-switched, radio frequency (RF) pumped, axial flow, carbon dioxide (CO2) oscillator that can operate at a repetition rate of, for example, 100 kHz.
RF radio frequency
CO2 carbon dioxide
the optical amplifiers within the optical amplifier systems 300, 305 each contain a gain medium on a respective beam path, along which a light beam 3 1 , 3.16 from the respecti ve light generator 310, 315 propagates.
the gain medium of the optical amplifier When the gain medium of the optical amplifier is excited, the gain medium provides photons to the light beam, amplifying the light beam 311, 316 to produce the amplified light beam that forms the first beam of radiation 1 10 or the second beam of radiation 1 15,
the wavelengths of the light beams 31 1, 316 or the beams of radiation 110, 1 15 c an be distinct from each other so that the beams of radiation ! 10, 1 15 can be separated from each other , if they are combined at any point within the optica! source 1 5.
the beams of radiation 1 10, 1 15 are produced by €(3 ⁇ 4 amplifiers, then the First beam of radiation 110 can have a wavelength of 10.26 ' micrometers f.uro) or 10.207 ⁇ , and the second beam of radiation 1 15 can have a wavelength of 10.59 ⁇ .
the wavelengths are chosen to more easily enable separation of the two beams of radiation 1 10, 1 15 using dispersive optics or dichroic mirror or beamspli tter coatings, in the situation in which both beams of radiation 1 10, 1 15 propagate together in the same amplifier chai n (for example, situation in which some of the amplifiers of optical amplifier system 300 are in the optical amplifier system 305), then the distinct wavelengths can be used to adjust a relati ve gain between the two beams of radiation 1 10, 1 15 even though they are traversing through the same amplifiers.
the beams of radiation 1 0, 115 could be steered or focused to two separate locations (such as the first and second target, locations i l l , 116, respectively) within the chamber 165.
the separation of the beams of radiation 110, 115 also enables the modified target 121 to expand after interacting with the first beam of radiation 1 10 while it travels from the first target location 1 1 1 to the second target location 116.
the optical source 105 can include a beam path combiner 325 that overlays the first beam of radiation 110 an d the second beam of radiation 1 15 and places the beams of radiation 1 1.0, 115 on the same optical path for at least some of the distance between the optical source 105 and the beam delivery system 150.
An exemplary beam path combiner 325 is shown in Fig, 3B, The beam path combiner 325 includes a pair of dichroic beam splitters 340, 342 and a pair of mirrors 344, 346.
the dichroic beam splitter 340 enables the first beam of radiation 1 10 to pass through along a first path that leads to the dichroic beam splitte 342,
the dichroic beam splitter 340 reflects the second beam of radiatio i 15 along a second path in which the second beam of radiation 1 15 is reflected from the mirrors 344, 346, which redirect the second beam of radiation 1 15 toward the dichroic beam splitter 342.
the first beam of radiation 1 freely passes through the dichroic beam splitter 342 onto an output path while the second beam of radiation 1 15 is reflected from the dichroic beam splitter 342 onto the output path so that both the first and second beam of radiation 1 10, 1 15 overlay on the output path.
the optical source 105 can include a beam path separator 326 that separates the fi rst beam of radiation 1 10 from the second beam of radiation 1 15 so that the two beams of radiation 110, 1 15 could be separately steered and focused within the chamber 165.
An exemplary beam path separator 326 is shown in Fig. 3C.
the beam path separator 326 includes a pair of dichroic beam splitters 350, 352 and a pair of mirrors 354, 356.
the dichroic beam splitter 350 -receives the overlaid pair of beams of radiation 1 10, 1 15, reflects the second beam of radiation 1 15 along a second path, and transmits the first beam of radiation 1 10 along a first path toward the dichroic beam splitter 352.
the first beam of radiation 1 10 freely passes through the dichroic beam splitter 352 along the first path.
the second beam of radiation 15 reflects from the mirrors 354, 356 and returns to the dichroic beam splitter 352, where it is reflected onto a second path that is distinct from the first path.
the first beam of radiation 1 10 can be configured to have less pulse energy than the poise energy of the second beam of radiation 1 15. This s because the first beam of radiation 1 10 is used to modify the geometry of the target material 120 while the second beam of radiation 3 15 is used to convert the modified targe 121 into plasma 129,
the pulse energy of the f st beam of radiation 1 10 can be 5-100 times less than the pulse energy of the second beam of radiation ⁇ 15.
each of the optical amplifiers 406, 407, 408 includes a gain medium that includes CCK and can amplify light at a wavelength of between about 9.1 and about ⁇ . ⁇ , and in particular, at about 10.6 ⁇ , at a gain greater than 1000. It is possible for the optical ampiifiers 401. 402, 403 to be operated similarly or at different wavelengths.
Suitable amplifiers and lasers for use in the optical amplifier systems 300, 305 can include a pulsed laser device such as a pulsed gas-discharge CO? amplifier producing radiation at about 9.3 ⁇ or about 10.6 pint, tor example, with DC or RF excitation, operating at relatively high power, for example, 10 k W or higher and high pulse repetition rate, for example, 50 kHz or more.
exemplary optical amplifiers 401 , 402, 403 or 406, 407. 408 are axial flow high-power C02 lasers with wear-free gas circulation and eapacitive RF excitation such as the TruFlow COj laser produced b TRU PF inc. of Fatmington, GT.
one or more of the optical amplifier systems 300 and 305 can include a first amplifier that acts as a pre-araplirler 411, 421. respectively.
the pre-amplifier 41 1 , 421 can be a diffiision-cooled CO 2 laser system such as the TruCoax CO? laser system produced by TRUMPF Inc. of Farraington, CT.
the optical amplifier systems 300, 305 can include optical elements that are not shown in Figs. 4 A and 48 for directing and shaping the respective light beams 31 1 , 316.
the optical amplifier systems 300, 305 can include reflective optics such as mirrors. par&aJly-transittissive -optics soch as beam splitters or partially-tt3 ⁇ 4ns.raissive mirrors, and dichroic beam splitters.
the optical source 105 also includes an optical system 320 thai can include one or more optics (such as reflective optics such as mirrors, partially reflective and partially transmissive optics such as beamsplitters, refractive optics such as prisms or lenses, passive optics, active optics, etc.) for directing the light beams 31 1 , 316 through the optical source 105.
optics such as reflective optics such as mirrors, partially reflective and partially transmissive optics such as beamsplitters, refractive optics such as prisms or lenses, passive optics, active optics, etc.
the optical amplifiers 401 , 402, 403 and 406, 407, 408 are shown as separate blocks, it is possible for at least one of the amplifiers 401, 402, 403 to be i the optical amplifier system 305 and for at leas one of the amplifiers 406. 407, 408 to be in the optical amplifier system 300.
the amplifiers 402, 403 correspond to the respective amplifiers 407, 408, and the optical amplifier systems 300, 305 include an additional optical element 500 (such as the beam path combiner 325) for combining the two light beams output from the amplifiers 401 , 406 into a single path thai passes through amplifier 402/407 and amplifier 403/408.
i is possibl e that the first beam of radiation 1 10 and the second beam of radiation 1 15 are coupled together such that changes of one or more characteristics of the first beam of radiation 1 10 can cause changes to one or more characteristics of the second beam of radiation 1 15, and vice versa.
energy such as the energy of the first beam of radiation 1 1 or the energy deli vered to the target material 120, within the system.
the optical amplifier system 300, 305 also include an optical element 505 (such as the beam path separator 326 ⁇ for separating the two light beams 1 10, 35 output from the amplifier 403/408 to enable the two light beams 110, 1 15 to be directed to respecti e target locations 1 1 1, 1 16.
an optical element 505 such as the beam path separator 326 ⁇ for separating the two light beams 1 10, 35 output from the amplifier 403/408 to enable the two light beams 110, 1 15 to be directed to respecti e target locations 1 1 1, 1 16.
the target material 120 ca be any material that includes target material that emits EUV light when converted to plasma.
the target material 120 can be a target mixture that includes a target substance and impurities such as non-target particles.
the target substance is the substance that can be converted to a plasma state that has an emission line in the EUV range.
the target substance can be, for example, a droplet of liquid or molten metal, a portion of a liquid stream, solid particles or clusters, solid particles contained within liquid droplets, a foam of target material, or solid particles contained within a portion of a liquid stream.
the target substance can be, for example, water, tin, lithium, xenon, or any material that, when converted to a plasma state, has an emission line in the EUV range.
the target substance can be the element tin, which can be used as pure tin (Sn); as a tin compound, for example, SnBr4, S.nBr2, SnH4; as a tin alloy, for example, tin-gallium alloys, tin-indium alloys, tin-indiunt-galliuni alloys, or any combination of these alloys.
the target material includes onl the target substance. The discussion below .provides an example in which the target material 320 is a droplet made of molten metal such as tin.
Che target material 120 can take other forms.
the target material 120 can be provided to the first target location 1 1 1 by passing molten target, material through a nozzle of the target material supply apparatus 125, and allowing the target material 120 to drift in to the first target location 1 1 1.
the target material 120 can be directed to the first target location 1 1 1 by force.
the shape of the target material 120 is changed or modified (for example, deformed) before reaching the second target location 1 1 by irradiating the target material 120 with a pulse of radiation f om the first beam of radiation 1 10.
the interaction between the first beam of radiation .1 10 and the target material 120 causes material to ablate from the surface of the target material 120 (and the modified target 121) and this ablation provides a force that deforms the target material 120 into the modified target 121 that has a shape that is different than the shape of the target material 120.
the target material 120 cars have a shape that is similai" to a droplet, while the shape of the modified target 121 deforms so that its shape is closer to the sh ape of a. disk (such as a. pancake shape) when it reaches the second target location 1 16,
the modified target 121 ca be a material that is not ionized (a material that is not a plasma) or that is minimally ionized.
the modified target 121 can be, for example, a disk of liquid or molten metal, a continuous segment of target material that does not have voids or substantial gaps, a mist of micro- or nano-pattkles. or a cloud of atomic vapor.
the modified target 121 expands after about a time T2-T1 (whi ch can be on the order of microseconds (ps)) into a disk shaped piece of molten metal 121 within the second target location l ib.
the interaction between the first beam of radiation i 10 and the target material 120 that causes the material to ablate from the surface of the target material 120 (and modified target 121) can provide a force that can cause the modified target 121 to acquire some propulsion or speed along the Z direction.
the expansion of the modified target 121 in the X direction and the acquired speed in the Z direction depend on an energy of the first beam of radiation 1 10, and in particular, on the energy delivered to (thai is, intercepted by) the target material 120.
the expansion rate is linearly proportional to the energy per unit area (Jonks/c 2 ) of the first beam of radiation. 1 10.
the energy per unit area is al so referred to as the radiant exposure or fluence.
the radiant exposure is the radiant energy received by the surface of the target material 120 per unit area, or equivaierttly irradiaoce of the surface of the target material 120 integrated over the time that the target material 120 is irradiated.
the relationship between the expansion rate and the energy of the first beam of radiation 110 can be different, in this regime, the shorter pulse duration correlates to an increase in intensity of the first beam of radiation 1 10 that interacts with the target material 120 and the first beam of radiation 1 10 behaves like a shock wave. In this regime, the expansion rate depends predominantly on the intensity I of the first beam of radiation 1 10.
the modified target 121 expands so as to form a mist.
the angular orientation (the angle relative to the Z direction or the X direction) of the disk shape of the modified target 121 depends on the position of the first beam of radiation .1 10 as i t strikes the target material 120.
i f the first beam of radiation 1 0 strikes the target material 120 such that the first beam of radiation 1 encompasses the target material and the beam waist of the first beam of radiation 110 is cen tered on the target material 120, then it is more likely that the disk shape of the modified target 121 will be aligned with its long axis 230 parallel with the X direction and its short axis 235 parallel with the Z direction.
the first beam of radiation 1 10 is made up of pulses of radiation, and each pulse can have a duration.
the second beam of radiation 115 is made up of pulses of radiation, and each pulse can have a duration.
the pulse duration can be represented by the full width at a percentage (for example, half) of the maximum, that is, the amount of time that the pulse has an intensity that is at least the percentage of the maximum intensity of the pulse. However, other metrics can be used to determine the pulse duration.
the pulse duration of the pulses within the first beam of radiation 110 can be, for example. 30 nanoseconds (ns). 60 ns, 130 ns , 50-250 ns, 10-200 picoseconds (ps), or less than 1 ns.
the energy of the first beam of radiation 1 10 can he, for example, 1-100 railli Joules (mJ).
the wavelength of the first beam of radiation 1 10 can be, for example, 1.06 gm, 1-10.6 ⁇ , 1039 ⁇ «, or 10.26 ⁇ .
the expansion rate of the modified target 1:21 depends on the radiant exposure (the energy per unit area) of the first beam of radiation 1 10 that intercepts the target material 120.
the actual radi an t exposure depends on how tightly the first beam of radiation 110 is focused at the first focal region 210.
the radiant exposure can be about 400-700 Joules/em 2 at the target material 120.
the radiant exposure is very sensitive to the location of the target material 120 relative to the first beam of radiation 1 10.
the second beam of radiation 1 15 can be referred to as the main beam and it is made up of pulses thai are released at a repeti tion rate.
the second beam of radiation .1 15 has sufficient energy to convert target substance within the modified target 121 into plasma that emits EUV light 130.
the pulses of the first beam of radiation 1 10 and the pulses of the second beam of radiatio 1 15 are separated in time by a delay time such as, for example, 1-3 microseconds ( ⁇ $), 1.3 gs, 1 -2,7 ⁇ $, 3-4 ⁇ $, or any amount of time that allows expansion of the modified target 121 into the disk shape of desired size that is shown in fig. 2.
the modified target 121 undergoes a two-dimensional expansio as the modified target 121 expands and elongates in the X-Y plane.
the second beam of radiation 1 ! 5 can be configured so that it is slightly de foe used as it strikes the modified target 121.
Such a defoeus scheme is shown in Fig. 2.
the second focal region 215 is at a different location along the . Z direction from the long axis 230 of the modified target 121 ; moreover, the second focal region 215 is outside of the second target location 1 16. in this scheme, the second focal region 215 is placed before the modified target 121 along the Z direction. That is, the second beam of radiation .1 15 comes to a focus (or beam waist) before the second beam of radiatio 115 strikes the modified target 1 1.
the second focal region 215 is placed after the modified target 121 along the Z direction.
the second beam of radiation 1 15 comes to a locus (or beam waist) after the second beam of radiation 1 15 strikes the modified target 121.
the rate at which the modified target 12 1 expands as it moves (for example, drifts) from th first target location 1 11 to the second target location 1 16 can be referred to as the expansion rate (ER).
the modified target 121 has an extent (or length) S I taken along the long axis 230.
the modified target 121 As the modified target .121 reaches the second target location 116 at time T2, the modified target 121 has an extent of S2 taken along the long axis 230.
the expansion rate is the difference in the extent (S2-S 1 ) of the modified target 121 taken along the long axis 230 divided by the difference in the time (T2-TI), thus:
modified target 121 expands along the long axis 230, it is also possible for the modified target 12 to compress or thin along the short axis 235.
the conversion efficiency can be defined as the EUV energy produced by the EUV light 130 into 2 ⁇ steradian and 2% bandwidth around the center wavelength of the reflectivit -curves of the multilayer), mirrors used in either or both the light collector system 135 and the illumination and projection optics in the optical apparatus 145 divided by the energy of the irradiating poise of the second beam of radiation ⁇ 5.
the center wavelength of the reflectivity curves is 13.5 nanometers (nm).
One way to increase, maintain, or optimize the conversion efficiency is to control or stabilize the energy of the EtJV light. 130, and to do this, it becomes important to maintain, among other parameters, the expansion rate of the modified target 121 to within an acceptable range of values.
the expansion rate of the modified target 121 is maintained within an acceptable range of values by maintaining the radiant exposure on the target material 120 from the first beam of radiation 110.
the rad iant exposure can be
the radiant exposure is the radiant energy received by the surface of the target material 120 per unit area. ill us, the radiant exposure can be estimated or approximated as the amount of energy directed toward the surface of the target material 120 if the area of the target material 120 remains constant from pulse to pulse.
the method or technique that is used can depend on certain properties assoc iated with the first beam of radiation 1 10.
the conversion efficiency is also impacted by other parameters, such as the size or thickness of the target material 120, the position of the target material 120 relative to the first focal region 21 , or the angle of the target material 120 relative to an x ⁇ y plane.
the confocal parameter of a beam of radiation is twice t he Rayleigh length of the beam of radiation, and the Raleigh length is the distance al ong the propagation direction of the beam of radiation from the waist to the pl ace where the area of the cross section is doubled.
the Rayleigh length is the distance along the propagation direction 212 of the first beam of radiation 10 from its waist (which is D 1/2 ⁇ to a place at which the cross section of the first beam is doubled.
the confocal parameter of the first beam of radiation ! 10 is so long that the beam waist (D! 2) easily encompasses the target material 120 and the area (that is measured across the X direction) of the surface of the target material 120 that is intercepted by the first beam of radiation 11 remains relatively constant even if the position of the target material 120 deviates from the location of the beam waist Dl /2.
the area of the surface of the target material 120 that is intercepted by the first beam of radiation 110 at location LI is within 20% of the area of the surface of the target material 120 that is intercepted by the first beam of radiation .1 10 at location L2.
the radiant exposure and thus the expansion rate can be maintained or controll ed by maintaining an amount of energy that is directed to the target material 120 from the first beam of radiation 110 (without having to factor in the sariace area of the target material 120 exposed by the first beam of radiation 110).
the confocal parameter of the first beam of radiation 1 10 is so short that the beam waist (Dl/2) does not encompass the target material 120 and the area of the surface of the target material 120 intercepted by the first beam of radiation 1 10 deviates from an average value if the position of the target materi al 120 deviates from the location LI. of the beam waist D l/2,
the area of the surface of the target material 120 intercepted by the first beam of radiation 10 at location LI is substantially different from the area of the surface of the target material 120 intercepted by the first beam of radiation 1 .10 at location L2.
the radiant exposure and thus the expansion rate can be maintained or controlled by controlling the amount of energy that delivered to the target material 120 from the first beam of radiation 1 .1 .
the radiant energy of the first beam of radiation 110 that is received by the surface of the target material 120 per unit area is controlled.
it is important to control the energy of the pulses of the first beam of radiati on 110 and the area of the first beam of radiation 1 1.0 where the target material 120 intercepts the first beam of radiation 1 10 The area of the first beam of radiation 110 where the target material 120 intercepts the first beam of radiation !
the first beam of radiation 1 10 correlates to the surface of the target material 120 that is intercepted by the first beam of radiation 110.
Another factor that can impact the area of the first beam of radiation 1 10 where the target material 1:20 intercepts the first beam of radiation 1 10 is the stability of the location and size of the beam waist Dl/2 of the first beam of radiation 1 10. For example, if the waist size and positio of the first beam of radiation 1 10 is constant, the one can control the location of the target material 120 relative to the beam waist. Dl/2. It is possible that the waist size and position of the first beam of radiation 1 change due to. for example, thermal effects in the optical source 105.
the measurement system 155 measures at least one characteristic associated with any one or more of the target .material 120, the modified target 121, and the first beam of radiation 110.
the measurement system 155 could measure an energy of the first beam of radiation 1 10.
an exemplary measurement system 855 A measures the energ of the first beam of radiation 110 that is directed to the target material 120,
an exemplary measurement system 855B measures an energy of radiation 860 that is reflected from the target material 120 after the first beam of radiation 110 interacts with the target material 120.
the reflection of the radiation 860 off the target material 120 can be used to determine the location of the target material 120 relative to the actual position of the first beam of radiation 110.
the exemplary measurement system 855 B can be placed within die optical amplifier system 300 of the optical source 105.
the measurement system 855B can be placed to measure an amount of energy in the reflected radi ation 860 that impinges ' upon or reflects from one of the optical elements (such as a thin film poiarizer) within the optical amplifier system 300, the amount, of radiation 860 reflected from the target materia! 1-20 is- proportional to an amount of energy delivered to the target material 120; thus, by measuring the reflected radiation 860, the amount of ener gy delivered to the target material 120 can b controlled or maintained. Additionally, the amount of energy that is mea sured in either the first beam of radiation 1 10 or the reflected radiation 860 correlates with a number of photons in the beam. Thus, it can be said that the amount of energy that is mea sured in either the first beam of radiation 1 10 or the reflected radiation 860 correlates with a number of photons in the beam. Thus, it can be said that the amount of energy in
the measurement system 855A or 855B measures a number of photons in the respective beam. Additionally, the measurement system 855B can be considered to measure the number of photons that are reflected from the target, material 120 (whic is becomes a modified target 12 ! as soon as it is struck by the first beam of radiation 1 10) as a function of how many photons strike the target material 120,
the measurement system 855 A or 855B can be a photoelectric sensor such as an array of photocells (for example, a 2x2 array or a 3x3 array).
the photocells have a sensitivity for the wavelength of the light to be measured, and they have sufficient speed or bandwidth appropriate to the duration of the ligh t pulses to he measured.
the measurement system 855A or S55B can measure the energy of the beam of radiation 1 10 by measuring a spatially integrated energy across a direction that is perpendicular to a direction of propagation of the first beam of radiation 1 10. Because measurement of the energy of the beam can be performed rapidly, it is possible to take a measurement for each pulse emitted in the first beans of radiation 110, and therefore, the measurement and control can be on a pulse-to-pulse basis.
the measurement system 855A, 855B can he a fast photodetector, such as a
the PEM detector can he a silicon diode for measuring near infrared or visible radiation or an InGaAs diode for measuring near infrared radiation.
the energy of the pulses in the first beam of radiation 110 can be determined by integrating the laser pulse signals measured by the measurement system 855 A, 855 B.
the measurement system 155 can be exemplary measurement system 955A, which measures a position Tpos of the target material 120 relative to a target position.
the target position can be at the beam waist of the first beam of radiation 3 10.
the position of the target .materia] 120 can be measured along a direction that is parallel with a beam axis (such as the first axial directi on 212) of the first beam of radi ation 10.
a measurement system 95 SB cm include lasers and/or cameras reflecting off the target material 1 0 as the target material 120 approaches to measure the position of the target material 120 and the arrival time of the target material 120 relative to a coordinate system within the chamber 165.
the measurement system 155 can be exemplary measurement system 955C, which measures a size of the modified target .121 at a position before the modified target 121 is interacted with the second beam of radiation 115.
the measurement system 955C can be configured to measure a size Suit of the modified target 12 ! while the modified target 121 is within the second target location 1 16 but before the modified target 121 is struck by the second beam of radiation 1 15,
the measurement system 955C can also determine the orientation of the modified target 121.
the measurement system 955C can use a shadowgraph technique of a pulsed backlighting illuminator and a camera (such as a charged-coupled device camera).
the measurement system 155 can.
each sub-system designed to measure particular characteristics and at different speeds or sampling intervals.
Such a set of sub-systems can work together to provide a clear picture of how the first beam of radiation 1 10 interacts with the target material 120 to form the modified target 121.
the measurement system 155 can include a plurality of BUY sensors within the chamber 1 5 for detecting the EUV energy emitted f om the plasma produced by the modified target 121 after it interacts with the second beam of radiation 1 15, By detecting the EUV energy emitted it is possible to obtain information about the angle of the modified target 121 or the transverse offset of the second beam with respec to the second beam of radiation 115.
the beam adjustment system 1 SO is employed under control of the control system 160 to enable the control of the amount of energy delivered to the target material 120 (the radiant exposure).
the radiant exposure can be controlled by controlling the amount of energy within the first beam of radiation 1 10 if it can be assumed that the area of the first beam of radiation 110 at the position at which it interacts with the target material 120 is constant.
the beam adjustment system 180 receives one or more signals from the control system 160.
the beam adjustment system 1.80 is configured to adjust one or more features of the optical source 105 to either maintain the amount of energy delivered to the target material 120 (that is.
the beam adjustment system 180 can include one or more actuators that control features of the optical source 105, the actuators ca be mechanical, electrical, optical, electromagnetic, or any suitable force device for causing the features of the opti cal source 105 to be modified.
the beam adjustment system 180 includes a pulse width adjustment system coupled to the fu st beam of radiation 1 10.
the pulse width adjustment system is configured to adjust a pulse width of the first beam of radiatio ! 10.
the pulse width adjustment system can include an electro-optic modulator such as, for example, a Pockels cell
the Pockels cell is arranged within the light generator 310 and by opening the Pockels cell for sborter or longer periods of time, the pulses that are transmitted by the Pockels cell (and thus the pulses that are emitted from the Sight generator 310 ⁇ can be adjusted to be shorter or longer.
the beam adjustment system 180 includes a pulse power adj ustment system coupled to the first beam of radiation 110.
the pulse power adjustment system is configured to adjust a power of each pulse of the first beam of radiation 1.10, for example, by adjusting an a verage power within each pulse, hi this implementation, the pulse power adjustment system can include an acousto-optic modulator.
the acousto-optic modulator can be arranged so that a change in RF signal applied to a piezoelectric transducer at the edge of the modulator can he varied to thereby change the power of the pulse that is diffracted from the acousto-optic modulator.
the beam .adjustment -system 180 includes an energy adjustment system coupled to the first beam of radiation 1 10.
the energy adjustment system is configured to adjust an energy of the first beam of radiation 1 0.
the energy adjustment system can he an electrically-variable attenuator (such as a Pockets cell varied between 0 V and the. hal f-wave voltage or an external aeousto-optic tnodul tor) .
the position or angle of the target material 120 relative to the beam waist Dl/2 varies so much that the beam adjustment system 180 includes an apparatus that controls the location or angle of the beam waist Dl/2 relative to the first target location 1 1 1 or relative to another location within the chamber 165 in the coordinate system of the chamber 165.
the apparatus can be a part of the focus assembly 156. and it can be used to move the beam waist along the Z direction or along a direction transverse to the Z
the control system 160 analyzes the information received from the measurement system 155, and determines how to adjust one or more properties of the first beam of radiation 1 10 to thereby control and maintain an expansion rate of the modified target 121.
the control system 160 can include one or more sub- controllers 1000, 1005, 1010, 1015 that interface with the other parts of the light source 100 such as a sub-controller 1000 specifically configured to interlace with (receive information from and send information to) the optical source 105, a sub-controller 1005 specifically configured t interface with, the measurement system: 155, a sub-controller 1010 configured to interlace with the beam delivery system 150, and a sub-controller 1015 configured to interface with the target material supply system 125.
the light source 100 can include other components not shown in Figs, 1 and 10 but that can interface with the control system 160.
the light source 100 can include diagnostic systems such as a. droplet position detection feedback system and one or more target or droplet imagers.
the target imagers provide an output indicative of the position of a droplet for example, relative to a specific position (suc as the primary focus 990 of the light collector 135) and provide this output to the droplet position detection feedback system, which can, for example, compute a. droplet position and trajectory from which a droplet position error can be computed ei ther on a droplet by droplet basts or cm average.
the droplet position detection feedback system thus provides the droplet position error as an input to sub-controller of the control system 160.
the control system 160 can provide a laser position, direction, and timin correction signal, for example, to the laser control system within the optical source 105 that can be used, for example, to control the laser timing circuit and/or to the beam control system to control an amplified light beam position aid shaping of the beam transport system to change the location and/or focal power of the focal plane of the first beam of radiation 1 10 or the second beam of radiation 115.
a laser position, direction, and timin correction signal for example, to the laser control system within the optical source 105 that can be used, for example, to control the laser timing circuit and/or to the beam control system to control an amplified light beam position aid shaping of the beam transport system to change the location and/or focal power of the focal plane of the first beam of radiation 1 10 or the second beam of radiation 115.
the target material delivery system 125 includes a target material delivery control system that is operable, in response to a signal from the control system 160, for example, to modi fy the release poi n t of the droplets of target material 120 as rel eased by an interna l delivery mechanism to correct for errors in the droplets arriving at the desired target location 111.
the control system 160 generally includes one or more of digital electronic circuitry, computer hardware, firmware, and software.
the control system 160 can also include appropriate input and output devices 1020, one or more programmable processors 1025, and one or more computer program products 1030 tangibly embodied in a machine-readable storage device for execution by a programmable processor. Moreo ver, each of the sub- controllers such as sub-controllers 1000, 005, 1010. 1015 can include their own appropriate input and output devices, one or more programmable processors, and one or more computer program producis tangibly embodied in machine-readable storage device for execution by a programmable processor
the one or more programmable processors can each execute a program of instructions to perform desired functions by operating on input data and generating appropriate output.
the processor recei es instractions and data from a read-onl memory and/or a random access memory.
Storage devices suitable for tangibly embodying computer program instractions and data include all forms of non-volatile memory, including, by way of example, semiconductor memory devices, such as EP OM, EEPROM. and flash memory devices; magnetic disks such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM disks. Any of the foregoing may be supplemented by, or incorporated in, specially designed ASICs (application-specific integrated circuits).
ASICs application-specific integrated circuits
control system 160 includes an analysis program 1040 that receives measurement data from the one or more measurements systems 155.
analysis program 1040 performs all of the analysis needed to determine how to modify or control an energy delivered to the target materia! 120 from the first beam of radiation 10 or to modify or control an energy of the first beam of radiation 1 10, and such analysis ca be performed on a pulse-to-pulse basis if the measurement data is obtained on a pulse-to-pulse basis.
the light source 100 (under control of the control system 160) perform s a procedure 1100 for maintaining or controlling an expansion rate (ER) of the modified target 121 to thereby improve th conversion efficiency of the light source 100.
the light source 100 provides the target materia! 120 (1 105).
the target material supply system 125 (under control of the control system 160) can deliver the target material 120 to the first target location 1 1 1.
the target material supply system 125 can include its own actuation system (connected to the control system 160) and a nozzle, through which the target material is forced, where the actuation system controls an amount of target material that is directed through the nozzle to produce a stream of droplets directed toward the first target location i l l .
the light source 100 directs the first beam of radiation 1 10 toward the target material 120 to deliver energy to the target material 120 to modify a geometric distribution of the target material 120 to form the modified target 121 (! 1 10).
the first beam of radiation 1 10 is directed through a first set 300 of one or more optical amplifiers toward the target material 120.
the optical source 105 can be acti ated by the control system 160 to generate the first beam of radiation 1 10 (in the form of pulses), which can he directed toward the target material 120 within the target location i l l , as shown in Fig. 2, A focal plane (whi ch is at the beam waist Dl 2) of the first beam of radiation 1 10 can be configured to cross the target location 1 1 1.
the focal plane can overlap the target material 120 or an edge of the target material 1.20 that faces the first beam of radiation 1 10,
the first beam of radiation 1 10 can be directed to the target material 120 (1 1 1 ) fay. for example, directing the first beam of radiation 1 10 through the beam delivery system 150, where various optics can be used to modify a direction or shape or di vergence of the radiation 1 10 so that it can interac with the target, mater ial 120.
the first beam of radiation 1 10 can be directed toward the target material 120 (1 1 0) by overlapping the target material 120 with an area of the first beam of radiation 1 1 that encompasses its confoca! parameter.
the confocal parameter of the first beam of radiation 1 10 can be so long that the beam waist (Dl/2) easily encompasses the target material 120 and the area (that is measured across the X direction) of the surface of the target material 120 that is intercepted by the first beam of radiation 110 remains relatively constant even if the posi tion of the target material 120 deviates from the location of the beam waist Dl/2 (as shown in Fig. 7.4).
the confocal parameter of the first beam of radiation 1 10 can be greater than 1.5.mm.
the confocal parameter of the first beam of radiation 1 10 is so short that the beam waist (Dl/2) does not encompass the target material 120 and the area of the suriace of the target material 120 intercepted by the firs t beam of radiation 1.10 deviates quite a bi t if the position of the target materia! 120 deviates from the locationoa LI of the beam waist Dl 2 (as shown in Fig. 7B),
the confocal parameter can be, for example, less than or equal to 2 mm.
the modified target 121 changes its shape from the shape of the target material 120 just after impact by the first beam of radiation 110 into an expanded shape, and this expanded shape continues to deform as it drifts away from the first target locationoa 111 toward the second target location i 16.
the modified target 121 can have a geometric distribution that deforms from the shape of the target material into a disk shaped volume of molten metal having a substantially planar surface (such as shown in Figs. 1 and 2),
the modified target 121 is transformed into the disk shaped volume in accordance with an expansion rate.
the modified target 121 is transformed by expanding the modified target 121 along at least one axis according to the expansion rate. For example, as shown in Fig.
the modified target 121 is expanded at least along the long axis 230, which is generally parallel with the X direction.
the modified target 121 is expanded along the at least one axis thai is not parallel with the optical axis (which is the second axial direction 217) of the second beam of radiation 115.
the first beam of radiation 1 10 primarily interacts wit the target material 20 by changing the shape of the target materia! 120, it is possible for the first beam of radiatio 1 10 to interact with the target material 120 m other ways; for example, the first beam of radiation 1 10 could convert a part, of the target material .120 to plasma thai emits EUV light.
the predominant action on the target material 120 from the first beam of radiation 110 is the modification of the geometric distribution of the target material 120 to form the modified target 121.
the light source 100 directs the second beam of radiation 115 toward the modified target 121 so that the second beam of radiation converts at least part of the modified target
the light source 100 directs the second beam of radiation 1 5 through a second set 305 of one or more optical amplifiers toward the modified target 121.
the optical source 105 can be activated by the control system 160 to generate the second beam of radiation 115 (in the form o f pulses), which can be directed toward the modified target 121 within the second target location 1 16, as shown in Fig. 2.
At least one of the optical amplifiers in the first set 300 can be in the second set 305, such as the example shown in Fig, 5.
the light source 100 measures one or more characteristics (for example, the energy) associated with one or more of the target material 120.and Che modified target 12 relative to the first beam of radiation 110 (1.120).
the measurement system 155 measures the characteristics under control of the control system 160, and the control system 160 receives the measurement data from the measurement system 155,
the light source 100 controls a radiant exposure at the target materi al 20 from the first beam of radiation 1 10 based on the one or more characteristics (1 125), As discussed above, the radiant exposure is an amount of radiant energy delivered to the target material: 120 from the first beam of radiation 1 10 per unit area. In other words, it is the radiant energy received by the surface of the target material 120 per unit area.
the characteristic that can be measured ( 1 120) is an energy of the first beam of radiation 110.
the characteristic that can be measured ( ! 120) is a position of the target material 120 relative to a position of the first beam of radiation 1 .10 (for example, relative to a beam waist of the first beam of radiation 1 10), such position could be determined in either a longitudinal (Z) direction or a direction transverse (for example, in the X-Y plane) to the longitudinal direction.
the energy of the first beam of radiation 1 1 can be measured by measuri ng the energy of the radiation 860 reflected from a opti cally reflective surface of the target material 1.20 (such as shown in Figs. 8B and 8C).
the energy of the radiation 860 reflected -from the optically reflective surface of the target material 120 can be measured by measuring a total intensity of the radiation 860 across four individual photocells.
the total energ content of the back reflected radiation 860 can be used in
the total energy content of the back reflected radi ation 860 can be used (along with other information) to determine a relative position between the target material 120 and the beam waist of the first beam of radiation along the Z direction.
the energy of the first beam of radiat ion ! 10 can be measured by measuring an energy of the first beam of radiation 1 10 directed toward the target materia! 120 (such as shown in f g. 8 A).
the energy of th First beam of radiation 1 10 can be measured by measuring a spatially integrated energ across a. direction perpendicular to a directio of propagation (the first axial direction 212) of the first beam of radi ation 110.
the characteristic that can be measured (1 120) is a pointing or direction of the first beam of radiation 1 10 as it travels toward the target material 120 (as shown in Fig. 8A). This information about the pointing can be used to determine an overlap error between a position of the target .material 120 and an axis of the first beam of radiation 1 0,
the characteristic that can be measured (1 120) is a position of the target materia! 120 relative to target position.
the target position can be at a beam waist (Dt/2) of the first beam of radiation 1 10 along the Z direction.
the position of the target material 120 can be measured along a direction that is parallel with the first axial direction 212.
the target position can be measured relative to the primary focus 990 of the light collector 135.
the position of the target material 120 can be measured along two or more non-parallel directions.
the characteristic that can be measured ( 120) is a size of the modified target before the second beam of radiatio converts at least part of the modified target to plasma
the characteristic that can be measured (1120) corresponds to an estimate of an expansio rate of the modified target
the characteristic that, can be measured ( 120) corresponds to a spatial characteristic of the radiation 860 that is reflected from the optically reflective surface of the target materi l .120 (such as shown in Figs. SB and SC). Such information can be used to determine the relative position between the target material 120 and the beam waist of th first beam of radiation 1 10 (for example, along the Z direction). This spatial characteristic can be determined or measured by using an astigmatic imaging system placed in the path of the reflected radiation 860.
the characteristic that can be measured. (1120) corresponds to an angle at which the radiation 860 is directed relative to the angle of the first beam of radiation 1 10. This measured angle can be used to determine a distance between the target material 120 and a bea axis of the first beam of radiation 1 10 along a direction transverse to the Z direction.
the characteristic that can be measured (1120) corresponds to a spatial aspect of the modified target 12.1 formed after the first beam of radiation 110 interacts with the tarae material 120.
the anale of the modified target 121 can be measured relative to a direction, for example, a direction m the X-Y plane that is transverse to the Z direction.
Such information about the angle of the modified target 121 can be used to determine a distance between the target material 120 and the axis of the first beam of radiation 1 30 alon g a direction transverse to the Z direction.
the size or expansion rate of the modified target 121 can be measured after a predetermined or set time after it is first formed from the interaction between the target material 1 0 and the first beam of radiation 110.
Such information abou t the size or expansion rate of the modified target 121 cars be used to determine a distance between the target material 120 and the beam wai st of the first beam of radiation 110 along a longitudinal direction (Z direction), if one knows that the energy of the first beam of radiation 1 10 is constant.
the characteri stic can be measured (1 120) as fast as for each pulse of the first beam of radiation 1 10.
the measurement rate could be as fast as pulse to pulse.
a camera can be used for the measurement system 155, but a camera s typically much slower, for exampl e, a camera could measure at a rate of about 1 Hz to about 200 Bz.
the amount of radiant exposure delivered to the target material ⁇ 20 from the first beam of radiation ⁇ 10 can be controlled (1 125) to thereby control or maintain an expansion rate of the modi fied target.
the amount of radiant exposure delivered to the target material 120 from the first, beam of radiation 1 10 can be control led (1 125) by determining whether a feature of the first beam of radiation 110 should be adjusted based on the one or more measured characteristics. Thus, if it is determined that the feature of the first beam of radiation 1 10 should be adjusted, then, for example, the energy content of a pulse of the first beam of radiation 11.0 can be adjusted or an area of the first beam of radiation 1 10 at the position of the target materia! 120 can be adjusted.
the energ content of the pulse of the first beam of radiation 3 10 can be adjusted by adjusting one or more of a pulse width of the first beam of radiation 1 10, a pulse duration of the first beam of radiation 110, and a average or instantaneous power of a pulse of the first beam of radiation 1 10,
the area of the first beam of radiation ⁇ 10 thai interacts with the target material 120 can be adjusted by adjusting a relative axial (along the Z direction) posit ion between the target m ateri al 1:20 and the beam waist of the first beam of radiat ion 1 10.
the one or more characteristics can be measured (1 120 ⁇ for each pulse of the first beam of radiation 1 10. In this way, it can be determined whether the feature of the first beam of radiation 110 should be adjusted for each pulse of the first beam of radiation 1 10.
the radiant exposure delivered to the target materia] .120 from the first beam of radiati on ⁇ 10 can be controlled (for example, to within the acceptable range of radiant exposures) by controlling the radiant exposure while at least a portion of the emitted and collected EUV light 140 is exposing a wafer of a lithography tool .
the procedure 1 100 can also include collecting at least a portion of the EUV light 130 emitted from the plasma (using the light collector 135); and directing the collected EUV light 140 toward wafer to expose the wafer to the EUV light 140.
the one or more measured characteristics (1 120) include a number of photons reflected from the modified target 121 ,
the number of photons reflected from the modified target 1.21 can be measured as a function of how many photons strike the target material ! 20.
the procedure 1100 includes controlling the radiant: exposure at the target material 120 from the first beam of radiation 3 S O (3 125 ) based on the one or more characteristics.
the radiant exposure can be controlled 1125 so thai it is maintained to within a predetermined range of radiant exposures .
the radiant exposure is an amount of radiant energy delivered to the target material 120 from the first beam of radiation 11 per unit area. In other words, it is the radiant energy received by tire surface of the target material 320 per unit area.
this factor of the radiant exposure remains relatively constant and it is possible to control the radiant exposure or to maintain the radiant exposure at the targe material 320 (3 25) by maintaining the energy of the first beam of radiation 1 10 to within an acceptable range of energies.
the radiant .exposure at die target material 120 from the Gist beam of radiation ! 10 (! 125) can be controlled so that an energy of a pulse of the first beam of radiation 1 10 is adjusted (for example, increased or decreased) by a feedback control using the measured characteristics 1120 to compensate for an error in a longitudinal (Z direction) placement of a position of the target material 120 relative to a beam waist of the first beam of radiation 1 10.
Tie first beam of radiation 1 1.0 ca be a pulsed beam of radiation such that pulses of light are directed toward the target material 120 (1 1 10).
the second beam of radiation 1 15 can be a pulsed beam of radiation such that pulses of light are directed toward the modi fied target 121 (1 1 15).
the target material 120 can be a droplet of the target material 120 produced from the target material supply system 125. In this way, the geometric distribution of the target material 120 can be modified into the modified target 121, which is transformed into a disk shaped volume of molten metal having a substantially planar surface. The target material droplet is transformed into the disk shaped volume in accordance with an expansion rate.
a procedure 1200 is performed by the light source 100 (under control of the control system 160) to stabilize the EUV light energy produced by the plasma 129 formed from the interaction between the modified target 121 with the second beam of radiation 1 15.
the light source 100 provides the target material 120 (1205); the light source 100 directs the first beam of radiation 1 10 toward the target material 12 to deli ver energy to the target, material 120 to modify a geometric distribution of the target materia! 120 to form the modified target 121 (1210); and the light source 100 directs the second beam of radiation 1 1.5 tow ard the modifi ed target 1 1 so that the second beam of radiation converts at least part of the modified target 121 to plasma 129 that emits EUV light (1215).
the light source 100 controls the radiant exposure applied to the target material 1 0 from the first beam of radiation 1 10 using the procedure 1 1 10 (1 20).
the power or energy of the EUV light 130 is stabilized by controlling the radiant exposure (1225).
the EUV energy (or power) produced by the plasma 129 is dependent on at least two functions, the first being the conversion efficiency CE and the second being the energy of the second beam of radiation 115.
the conversion efficiency is the percentage of the modified target 121 that is converted to plasma 129 by the second beam of radiation 115.
the conversion efficiency depends on several variables, including, the peak power of the second beam of radiation 1 15. the size of the modified target 121 when it interacts with the second beam of radiation 115, the position of the modified target 121 relative to a desired position, a transverse area or size of the second beam of radiation 1 15 as the moment it interacts with the modified target 121.
the position of the modifie target 121 and the size of the modified target 121 depend on how the target mater ial 20 interacts with the first beam of radiation 1 10, by controlling the radiant exposure applied to the target material 120 from the first beam of radiation 110 » one can control the expansion rate of the modified target 121, and thus, one ca control these two factors, hi this way, the conversion efficiency can be stabilizing or controlled by controlling the radiant exposure (1220), which therefore stabilizes the EUV energy produced by the plasma 129 (1225).
the first beam of radiation 1 10 can be produced by a dedicated sub-systera 1305A within the optical source 305 and the second beam of radiation 115 can be prodoced by dedicated and separate sub-system 1305B within the optica! source 105 so that the beams of radiation 1 10, 1 15 follow two separate paths on the way to the respective first and second target locations 111, 116. in this way, each of the beams of radiation 110, 1 15 travel through respective subsystems of the beam delivery system 150, and thus, they travel through respective and separate optical steering components 1352A, 1352B and focus assemblies 1356 A, 1356B.
the sub-system 1305 A can be a system that is based on solid-state gai media
the sub-system 1305B can be a system that is based on gas gain media such as that produced by C ⁇ 1 ⁇ 4 amplifiers.
Exemplary solid-state gain media that ca be used as the sub-system 1305 A i clude erbium doped fiber lasers and iieody ium-doped yttrium aluminum garnet (I YAG) lasers.
the wavelength of the first ' beam of radiatio 1 10 could be distinct from the wavelength of the second beam of radiation 1 15 ⁇ .
the wavelength of the first beam of radiation 110 that uses a solid-state gain medium can be about 1 ⁇ (for example, about 1 ,06 ⁇ ), and the wavelength of the second beam of radiation 1 15 thai uses a gas medium can. be about 10.6 ⁇

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KR1020187006976A KR102631831B1 (ko)	2015-08-12	2016-08-10	극자외 광원 내에서의 타겟 팽창 속도 제어 방법

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