CN108353489B - 极紫外光源中的目标扩展速率控制 - Google Patents

极紫外光源中的目标扩展速率控制 Download PDF

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Publication number
CN108353489B
CN108353489B CN201680047368.0A CN201680047368A CN108353489B CN 108353489 B CN108353489 B CN 108353489B CN 201680047368 A CN201680047368 A CN 201680047368A CN 108353489 B CN108353489 B CN 108353489B
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radiation
target material
target
energy
modified
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CN108353489A (zh
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R·J·拉法克
D·J·里格斯
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ASML Holding NV
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ASML Holding NV
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Priority claimed from US14/824,141 external-priority patent/US9820368B2/en
Priority claimed from US14/824,147 external-priority patent/US9713240B2/en
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Priority to CN202111336436.4A priority Critical patent/CN113966061A/zh
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/008X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
CN201680047368.0A 2015-08-12 2016-08-10 极紫外光源中的目标扩展速率控制 Active CN108353489B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111336436.4A CN113966061A (zh) 2015-08-12 2016-08-10 极紫外光源中的目标扩展速率控制

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/824,141 US9820368B2 (en) 2015-08-12 2015-08-12 Target expansion rate control in an extreme ultraviolet light source
US14/824,141 2015-08-12
US14/824,147 US9713240B2 (en) 2015-08-12 2015-08-12 Stabilizing EUV light power in an extreme ultraviolet light source
US14/824,147 2015-08-12
PCT/US2016/046301 WO2017027566A1 (en) 2015-08-12 2016-08-10 Target expansion rate control in an extreme ultraviolet light source

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CN202111336436.4A Division CN113966061A (zh) 2015-08-12 2016-08-10 极紫外光源中的目标扩展速率控制

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CN108353489A CN108353489A (zh) 2018-07-31
CN108353489B true CN108353489B (zh) 2021-11-19

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CN202111336436.4A Pending CN113966061A (zh) 2015-08-12 2016-08-10 极紫外光源中的目标扩展速率控制
CN201680047368.0A Active CN108353489B (zh) 2015-08-12 2016-08-10 极紫外光源中的目标扩展速率控制

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JP (3) JP6744397B2 (ja)
KR (2) KR20240015174A (ja)
CN (2) CN113966061A (ja)
TW (2) TWI739755B (ja)
WO (1) WO2017027566A1 (ja)

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TWI739755B (zh) * 2015-08-12 2021-09-21 荷蘭商Asml荷蘭公司 極紫外線光源中之目標擴張率控制
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
CN111566563A (zh) * 2017-10-26 2020-08-21 Asml荷兰有限公司 用于监测等离子体的***
US10314154B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for extreme ultraviolet source control
TWI821437B (zh) * 2018-10-26 2023-11-11 荷蘭商Asml荷蘭公司 用於監控光發射之系統、euv光源、及控制euv光源之方法
US20210245436A1 (en) * 2018-10-30 2021-08-12 Hewlett-Packard Development Company, L.P. Feedback control of microwave energy emitters
KR20210130901A (ko) 2020-04-22 2021-11-02 삼성디스플레이 주식회사 표시 장치의 제조 장치
CN111999989B (zh) * 2020-09-01 2023-07-14 广东省智能机器人研究院 激光等离子体极紫外光源和极紫外光产生方法

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CN103064260A (zh) * 2012-12-10 2013-04-24 华中科技大学 一种用于极紫外光刻机光源的锡液滴靶产生装置
CN103748968A (zh) * 2011-09-02 2014-04-23 Asml荷兰有限公司 辐射源和光刻设备
WO2014143504A1 (en) * 2013-03-14 2014-09-18 Cymer, Llc Target for laser produced plasma extreme ultraviolet light source

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JP4917014B2 (ja) 2004-03-10 2012-04-18 サイマー インコーポレイテッド Euv光源
US7529281B2 (en) * 2006-07-11 2009-05-05 Mobius Photonics, Inc. Light source with precisely controlled wavelength-converted average power
US7872245B2 (en) 2008-03-17 2011-01-18 Cymer, Inc. Systems and methods for target material delivery in a laser produced plasma EUV light source
JP5368261B2 (ja) * 2008-11-06 2013-12-18 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法
US8436328B2 (en) * 2008-12-16 2013-05-07 Gigaphoton Inc. Extreme ultraviolet light source apparatus
NL2004837A (en) * 2009-07-09 2011-01-10 Asml Netherlands Bv Radiation system and lithographic apparatus.
JP2013004258A (ja) * 2011-06-15 2013-01-07 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光の生成方法
JP5075951B2 (ja) * 2010-07-16 2012-11-21 ギガフォトン株式会社 極端紫外光源装置及びドライバレーザシステム
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JP5881345B2 (ja) * 2011-09-13 2016-03-09 ギガフォトン株式会社 極端紫外光生成装置
JP5932306B2 (ja) * 2011-11-16 2016-06-08 ギガフォトン株式会社 極端紫外光生成装置
DE102011086949A1 (de) * 2011-11-23 2013-05-23 Carl Zeiss Smt Gmbh Beleuchtungs- und Verlagerungsvorrichtung für eine Projektionsbelichtungsanlage
JP2015528994A (ja) * 2012-08-01 2015-10-01 エーエスエムエル ネザーランズ ビー.ブイ. 放射を発生させるための方法及び装置
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JP6646576B2 (ja) * 2013-11-15 2020-02-14 エーエスエムエル ネザーランズ ビー.ブイ. 放射源
US9232623B2 (en) * 2014-01-22 2016-01-05 Asml Netherlands B.V. Extreme ultraviolet light source
TWI739755B (zh) * 2015-08-12 2021-09-21 荷蘭商Asml荷蘭公司 極紫外線光源中之目標擴張率控制

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102971922A (zh) * 2010-06-24 2013-03-13 西默股份有限公司 用于euv光源的具有预脉冲的主振荡器-功率放大器驱动激光器
CN103748968A (zh) * 2011-09-02 2014-04-23 Asml荷兰有限公司 辐射源和光刻设备
CN103064260A (zh) * 2012-12-10 2013-04-24 华中科技大学 一种用于极紫外光刻机光源的锡液滴靶产生装置
WO2014143504A1 (en) * 2013-03-14 2014-09-18 Cymer, Llc Target for laser produced plasma extreme ultraviolet light source

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Publication number Publication date
JP2018532138A (ja) 2018-11-01
KR20180038543A (ko) 2018-04-16
TWI788998B (zh) 2023-01-01
JP6952844B2 (ja) 2021-10-27
JP2020194178A (ja) 2020-12-03
KR102631831B1 (ko) 2024-01-30
JP2022008595A (ja) 2022-01-13
TW202210958A (zh) 2022-03-16
JP7241143B2 (ja) 2023-03-16
CN113966061A (zh) 2022-01-21
TW201729480A (zh) 2017-08-16
WO2017027566A1 (en) 2017-02-16
JP6744397B2 (ja) 2020-08-19
KR20240015174A (ko) 2024-02-02
CN108353489A (zh) 2018-07-31
TWI739755B (zh) 2021-09-21

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