WO2016206050A1 - Photoelectric detector - Google Patents

Photoelectric detector Download PDF

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Publication number
WO2016206050A1
WO2016206050A1 PCT/CN2015/082360 CN2015082360W WO2016206050A1 WO 2016206050 A1 WO2016206050 A1 WO 2016206050A1 CN 2015082360 W CN2015082360 W CN 2015082360W WO 2016206050 A1 WO2016206050 A1 WO 2016206050A1
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Prior art keywords
doped layer
layer
metal electrode
photodetector
type
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PCT/CN2015/082360
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French (fr)
Chinese (zh)
Inventor
李宝霞
薛海韵
曹彤彤
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华为技术有限公司
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Priority to CN201580001263.7A priority Critical patent/CN106688109A/en
Priority to PCT/CN2015/082360 priority patent/WO2016206050A1/en
Publication of WO2016206050A1 publication Critical patent/WO2016206050A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of detectors, and in particular to a photodetector.
  • Photodetector is used to convert optical signals into electrical signals. It is a device that can convert optical radiation energy into a physical quantity that is easy to measure. It is widely used in optical communication, optical interconnection, optical signal processing and other technical fields, especially Highly integrated photodetectors based on semiconductor materials such as silicon and germanium will be indispensable key components for future ultra-small optical interconnect systems.
  • photodetectors have many structures, including commonly used PN-type structures and PIN-type structures.
  • the technical indicators of photodetectors include response bandwidth, sensitivity, power consumption, photoelectric conversion efficiency, etc.
  • photoelectric conversion efficiency is photoelectric
  • the important performance parameters of the detector are used to describe the efficiency of the conversion of incident photons into electrons. Its high and low directly affect the effective reception of the signal. Therefore, the photoelectric conversion efficiency has become one of the important considerations for various manufacturers in the production of photodetectors.
  • Embodiments of the present invention provide a photodetector for improving photoelectric conversion rate.
  • a first aspect of the present invention provides a photodetector comprising: a substrate, a bulk insulating layer, a first doped layer, a second doped layer, a first metal electrode, a second metal electrode, and a clad insulating layer;
  • the bulk insulating layer is disposed above the substrate, the first doped layer is disposed above the bulk insulating layer, and the second doped layer is disposed over the first doped layer, the second doping
  • the cladding insulating layer is disposed above the layer;
  • One end of the first metal electrode is disposed inside the first doped layer, the other end of the first metal electrode passes through the clad insulating layer and constitutes a first electrode lead; and one end of the second metal electrode is disposed at Inside the second doped layer, the other end of the second metal electrode passes through the clad insulating layer and constitutes a second electrode lead;
  • the second doped layer is outwardly extended with at least one extension body, and the at least one extension body is embedded in the first doped layer, and the at least one extension body and the second doped layer are made of the same material;
  • the second doped layer when the first doped layer is a P-type doped layer, the second doped layer is an N-type doped layer; When the first doped layer is an N-type doped layer, the second doped layer is a P-type doped layer.
  • the first metal electrode As a P-type source, the second metal electrode is an N-type drain.
  • the first metal electrode is a P-type source.
  • the photodetector further includes an intrinsic a region, wherein the intrinsic region is disposed between a contact surface of the first doped layer and the second doped layer.
  • a fourth possible implementation in a state in which the extension of the second doped layer is embedded in the first doped layer, the intrinsic region tends to have a concave shape in the corresponding position of the extension body, the concave shape matching the shape of the extension body.
  • the photodetector provided by the embodiment of the present invention includes a stacked substrate 11, a bulk insulating layer 12, a first doped layer 13, a second doped layer 14, and a clad insulating layer 17, due to the second doping.
  • the layer 14 extends outwardly from the at least one extension 18, and the extension 18 is embedded in the first doped layer 13, wherein the at least one extension 18 and the second doped layer 14 are made of the same material, therefore, at the first A PN junction, that is, a first doping layer 13 is formed at a contact surface of the doped layer 13 and the second doped layer 14 and at a contact face of the extension 18 of the first doped layer 13 and the second doped layer 14
  • the PN junction is formed not only on the lateral contact surface but also on the second doped layer 14 , and the second doped layer 14 forms a PN junction with the first doped layer 13 in the vertical direction through the extension 18, thereby effectively increasing the photoelectricity.
  • the reverse bias voltage is applied to the first metal electrode 15 disposed at one end of the first doped layer 13, and the second metal electrode 16 disposed at the second doped layer 14 to one end.
  • the incident light is incident on the PN junction from the cladding insulating layer 17, and the electrons on the PN junction absorb the incident light.
  • the energy a transition occurs to excite the photo-generated carriers, and the light energy is converted into an electrical signal by the electric field formed by the first metal electrode 15 and the second metal electrode 16.
  • the photoelectric conversion rate is increased by increasing the PN junction area.
  • FIG. 1 is a side elevational view of a photodetector according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a working principle of a photodetector according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a working principle of a photodetector according to another embodiment of the present invention.
  • FIG. 4 is a side cross-sectional view of a photodetector of a PIN junction structure according to some embodiments of the present invention.
  • FIG. 5 is a top plan view of a photodetector of a PN junction structure according to some embodiments of the present invention.
  • Embodiments of the present invention provide a photodetector for improving photoelectric conversion rate.
  • the photodetector provided by the embodiment of the invention can be applied to an optical interconnect system, an optical communication system or an optical signal processing system.
  • FIG. 1 is a side view of a photodetector according to an embodiment of the present invention.
  • a photodetector according to some embodiments of the present invention may include:
  • Substrate 11 bulk insulating layer 12, first doped layer 13, second doped layer 14, first metal electrode 15, a second metal electrode 16 and a cladding insulating layer 17;
  • the first insulating layer 12 is disposed above the substrate 11 , and the first doped layer 13 is disposed above the bulk insulating layer 12 , and the second doped layer 14 is disposed above the first doped layer 13 .
  • the cladding insulating layer 17 is disposed above the second doping layer 14;
  • first metal electrode 15 is disposed inside the first doped layer 13, and the other end of the first metal electrode 15 passes through the clad insulating layer 17 and constitutes a first electrode lead;
  • second metal One end of the electrode 16 is disposed inside the second doped layer 14, and the other end of the second metal electrode 16 passes through the clad insulating layer 17 and constitutes a second electrode lead;
  • the second doped layer 14 extends outwardly from the at least one extension 18, the at least one extension 18 is embedded in the first doped layer 13, the at least one extension 18 and the second doping Layer 14 is of the same material;
  • the second doped layer 14 when the first doped layer 13 is a P-type doped layer, the second doped layer 14 is an N-type doped layer; when the first doped layer 13 is an N-type doped layer, The second doping layer 14 is a P-type doped layer.
  • the substrate 11, the bulk insulating layer 12, the first doping layer 13, the second doping layer 14, and the clad insulating layer 17 are stacked design, wherein The second doped layer 14 extends outwardly from the at least one extension 18, the at least one extension 18 is embedded in the first doped layer 13, and the material of the at least one extension 18 is the same as the material of the second doped layer 14.
  • a PN junction is formed at the contact face of the first doped layer 13 and the second doped layer 14, and at the contact face of the first doped layer 13 and the extension 18 of the second doped layer 14, ie
  • the first doped layer 13 and the second doped layer 14 not only form a PN junction on the lateral contact surface, but the second doped layer 14 forms a PN with the first doped layer 13 in the vertical direction by the extension 18
  • the junction effectively increases the effective area of the PN junction in the photodetector, thereby increasing the number of photogenerated carriers generated per unit incident light window area, and therefore, the first metal electrode 15 disposed at the first doping layer 13 at one end Applying a reverse bias voltage and applying a reverse bias to the second metal electrode 16 disposed at one end of the second doped layer 14 After the voltage, the incident light is incident from the cladding insulating layer 17 onto the PN junction in the lateral and vertical directions, and the electrons on the PN junction are excited after absorbing the energy of the incident light, exciting the photo
  • FIG. 2 is a schematic diagram of a working principle of a photodetector according to an embodiment of the present invention
  • 21 is a contact surface between the first doping layer 13 and the second doping layer 14, and a first doping layer.
  • a PN junction formed on a contact surface with the extension 18 of the second doped layer 14 is applied with a reverse bias voltage to the PN junction through the first metal electrode 15 and the second metal electrode 16 during operation of the photodetector, the incident light is from The cladding insulating layer 17 is incident.
  • the incident light is incident on the PN junction, the electrons in the PN junction area undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and converting them into electrical signals under the action of the electric field.
  • the first doping layer 13 and the second doping layer 14 form a PN junction on the lateral contact surface, and the extension layer 18 of the first doping layer 13 and the second doping layer 14 A PN junction is also formed in the vertical contact surface, thereby increasing the total area of the PN junction as a whole, so that the number of photogenerated carriers generated per unit incident light window area is increased, and the photoelectric conversion efficiency is improved.
  • the width of the PN junction is not significantly increased, so the response speed of the photodetector is Has little effect.
  • higher photoelectric conversion efficiency can be obtained due to lower reverse bias voltage, so it can be applied to scenarios with low power consumption requirements.
  • FIG. 3 is a schematic diagram of the working principle of the photodetector according to another embodiment of the present invention
  • FIG. 3 is a schematic diagram of the working principle of the photodetector provided by the embodiment of the present invention.
  • the incident light changes in a periodic refractive index in the vertical PN junction region, and a light diffraction effect of the grating-like grating can be formed.
  • the traveling direction will be diffracted from the vertical direction to the horizontal direction (as indicated by the direction of the arrow in FIG. 3), which is advantageous for further absorption of incident light, achieving higher absorption efficiency, and further improving the photoelectric conversion efficiency of the photodetector.
  • FIG. 1 to FIG. 3 are descriptions of the photodetector of the PN junction structure.
  • the embodiment of the present invention further provides a photodetector with a PIN junction structure.
  • the photodetector of the PIN junction structure further includes an intrinsic region 19, wherein the intrinsic region 19 is disposed in the first doping Between the contact surface of the impurity layer 13 and the second doping layer 14.
  • the intrinsic region 19 is used to isolate the first doping.
  • Layer 13 and second doped layer 14 are used to isolate the first doping.
  • the intrinsic region 19 tends to have a concave shape in the corresponding position of the extension body 18.
  • the recessed shape matches the shape of the extension 18.
  • the intrinsic region 19 is an undoped region or a region with a low doping concentration, and the material used is close to the intrinsic.
  • the entire intrinsic region is a depletion layer. It can be used to absorb incident light to generate photogenerated carriers.
  • the intrinsic region 19 is isolated between the first doped layer 13 and the second doped layer 14, and the entire intrinsic region 19 is used as a depletion layer. It is used to absorb incident light and generate photocarriers. Therefore, in the photodetector of the PIN junction structure, the contact face of the first doped layer 13 with the intrinsic region 19, the contact face of the second doped layer 14 with the intrinsic region 19, and the entire intrinsic region 19 serve as PIN junctions.
  • the PIN junction replaces the PN junction in the PN junction structure.
  • the working principle of the photodetector of the PIN junction structure is as follows: when the photodetector of the PIN junction structure is in operation, a reverse bias voltage is applied to the PIN junction through the first metal electrode 15 and the second metal electrode 16, and the incident light is from the cladding layer. The insulating layer 17 is incident. When the incident light is incident on the PIN junction, the electrons in the PIN junction area undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and converting into electrical signals under the action of the electric field.
  • the extension 18 of the second doped layer 14 is embedded in the first doped layer 13 in the photodetector of the PIN junction structure shown in FIG. 4, the intrinsic region 19 is at the corresponding position of the extension 18
  • the first doped layer 13 is inclined to have a concave shape, and therefore, a PIN junction region is also formed in a direction perpendicular to the first doped layer 13, thereby increasing the total area of the PIN junction as a whole, so that the unit incident light window area The number of photogenerated carriers generated is larger, and the photoelectric conversion efficiency is improved.
  • the incident light changes in the periodic refractive index in the vertical PIN junction region, a light diffraction effect of the grating-like grating can be formed, and the traveling direction of the light is diffracted from the vertical direction to the horizontal direction, which is advantageous for further absorption of the incident light, thereby realizing more
  • the high absorption efficiency further enhances the photoelectric conversion efficiency of the photodetector.
  • the second doping layer 14 and the extension body 18 are doped with the same material, and are an integrally formed structure.
  • the substrate 11 is first formed at the bottom, then the bulk insulating layer 12 is formed over the substrate 11, and the first doping is formed over the bulk insulating layer 12.
  • the first doped layer 13 is completed, at least one region is etched in the first doped layer 13, and then the second doped layer is formed on the surface of the first doped layer 13 by selective growth. 14 and forming an extension 18 in this region.
  • the substrate 11 is first formed at the bottom, followed by lining A bulk insulating layer 12 is formed on the bottom of the bottom 11, and then a layer of semiconductor silicon is formed over the bulk insulating layer 12, and then boron is doped into the semiconductor silicon to form a P-type doped layer, and then, by etching, At least one region is etched on the P-type doped layer, and then a layer of semiconductor silicon is formed over the P-type doped layer and in the region, and the semiconductor silicon is doped with phosphorus to form an N-type doped layer.
  • An extension 18 of the N-type doped layer that expands outward is obtained in the etched region.
  • the substrate 11 in the production of the photodetector, is first formed at the bottom, and then the bulk insulating layer 12 is formed over the substrate 11, and the first doped layer 13 and the second doped layer
  • the hybrid layer 14 and the extended extension 18 can be formed by defining different lithographic regions, then ion implantation separately in the respective lithographic regions, and activation by rapid high temperature annealing.
  • the extension 18 can be any shape of geometry, such as a cylinder, a vertebral body, a pedestal, a cuboid, and the like. Therefore, when the photodetector is produced, if the extension 18 of the second doped layer 14 is formed by etching the region in the first doped layer 13, the shape of the etched region is correspondingly the pillar. Body, vertebral body, table body, cuboid, etc. Similarly, if a different lithographic area is defined first, the lithographic area where the extension 18 is located is also a cylinder, a vertebral body, a pedestal, a rectangular parallelepiped or the like.
  • the first metal electrode 15 in the embodiment of the present invention may be a P-type source or an N-type drain.
  • the second metal electrode 16 may be an N-type drain or a P-type source, and specifically includes the following two cases. :
  • the first metal electrode 15 is a P-type source
  • the second metal electrode 16 is an N-type Drain
  • the first metal electrode 15 is an N-type drain
  • the second metal electrode 16 is a P-type source. pole.
  • the second doped layer 14 in the photodetector has a comb shape.
  • the material of the first doping layer 13 is a semiconductor material
  • the material of the second doping layer 14 is a semiconductor material.
  • the semiconductor material may be a silicon, germanium or tri-five compound material.
  • FIG. 5 is a top view of a photodetector of a PN junction structure according to some embodiments of the present invention; in FIG. 5, an incident window of a photodetector of a PN junction structure according to an embodiment of the present invention is A circular structure, in FIG. 5, the bottom of the photodetector of the PN junction structure is an N-type doped layer, the top is a P-type doped layer, and a ring-shaped N-type drain is formed outside the N-type doped layer, at P An annular P-type source is formed outside the doped layer, and an N-type drain leads the electrode lead outward. Similarly, the P-type drain leads the electrode lead outward.
  • FIG. 5 is used to indicate the P-type doped layer flared extension 18, which is embedded in the N-type doped layer, and in FIG. 5, 12 extensions 18 are taken as an example, incident. After the light is incident from the circular incident window, the electrons at the PN junction are converted into electrical signals after absorbing the energy of the incident light, and then output electrical signals from the P-type source and the N-type drain.
  • FIG. 5 only shows an embodiment of the photodetector of the PN junction structure.
  • the light incident window of the photodetector of the embodiment of the present invention may have other shapes in addition to the circular structure shown in FIG. 5.
  • the projected shape of the top view of the extension 18 changes according to the actual shape of the extension 18.
  • the projection of the top view is circular as shown in FIG.
  • the projection shape of the plan view is a triangle, which is not limited herein.
  • the photodetector of the PN junction structure or the photodetector of the PIN junction structure provided by the above embodiments can be applied in an optical interconnection system, and the photodetector passes through a P-type source and an N-type drain and light. Connected to the light receiving module in the system, the photodetector is also connected to an external circuit through a P-type source and an N-type drain, and a reverse bias voltage is applied to the PN junction or the PIN junction in the photodetector through an external circuit, and photodetection is performed.
  • the device starts to work, the incident light is incident from the insulating layer, and when the incident light is incident on the PN junction or the PIN junction, the photo-generated carriers are excited, and an electric signal is formed under the electric field, and the P-type source and the N-type drain are passed.
  • Output to the light receiving module the light receiving module completes the subsequent operation of the electrical signal.
  • the photodetector provided by the embodiment of the present invention includes a stacked substrate 11, a bulk insulating layer 12, a first doped layer 13, a second doped layer 14, and a clad insulating layer 17, due to the second doping
  • the impurity layer 14 extends outwardly from the at least one extension body 18, and the extension body 18 is embedded in the first doping layer 13, wherein the at least one extension body 18 and the second doping layer 14 are made of the same material, therefore,
  • a PN junction that is, a first doping layer 13 is formed at a contact surface of a doped layer 13 and a second doped layer 14 and at a contact surface of the extension 18 of the first doped layer 13 and the second doped layer 14
  • the second doped layer 14 not only in the lateral direction a PN junction is formed on the contact surface, and the second doped layer 14 forms a PN junction with the first doped layer 13 in the vertical direction through the extension 18, thereby effectively increasing the effective area of the PN junction in the photodet

Abstract

A photoelectric detector comprises a substrate (11); a body insulation layer (12) is arranged above the substrate (11), a first doping layer (13) is arranged above the body insulation layer (12), a second doping layer (14) is arranged above the first doping layer (13), and a cladding insulation layer (17) is arranged above the second doping layer (14); one end of a first metal electrode (15) is arranged inside the first doping layer (13), and the other end of the first metal electrode (15) passes through the cladding insulation layer (17) and constitutes a first electrode lead; one end of a second metal electrode (16) is arranged inside the second doping layer (14), and the other end of the second metal electrode (16) passes through the cladding insulation layer (17) and constitutes a second electrode lead; and the second doping layer (14) extends outward by at least one extension body (18), the at least one extension body (18) is embedded in the first doping layer (13), and the at least one extension body (18) and the second doping layer (14) are of the same material, wherein when the first doping layer (13) is a P-type doping layer, the second doping layer (14) is an N-type doping layer, and when the first doping layer (13) is an N-type doping layer, the second doping layer (14) is a P-type doping layer. The photoelectric detector improves the photoelectric conversion rate.

Description

一种光电探测器Photodetector 技术领域Technical field
本发明涉及探测器技术领域，具体涉及一种光电探测器。The invention relates to the technical field of detectors, and in particular to a photodetector.
背景技术Background technique
光电探测器用于把光信号转换为电信号，即是一种能把光辐射能量转换成一种便于测量的物理量的器件，广泛应用在光通信、光互连、光信号处理等技术领域，尤其是基于硅、锗等半导体材料的高度集成的光电探测器，将是未来超小型光互连***不可缺少的关键器件。目前，光电探测器的结构较多，包括常用的PN型结构和PIN型结构等，衡量光电探测器的技术指标包括响应带宽、灵敏度、功耗、光电转换效率等，其中，光电转换效率是光电探测器的重要性能参数，用于描述入射光子转换成电子的效率，它的高低直接影响到信号的有效接收，因此，光电转换效率成为各个厂商在生产光电探测器时重要考虑的问题之一。Photodetector is used to convert optical signals into electrical signals. It is a device that can convert optical radiation energy into a physical quantity that is easy to measure. It is widely used in optical communication, optical interconnection, optical signal processing and other technical fields, especially Highly integrated photodetectors based on semiconductor materials such as silicon and germanium will be indispensable key components for future ultra-small optical interconnect systems. At present, photodetectors have many structures, including commonly used PN-type structures and PIN-type structures. The technical indicators of photodetectors include response bandwidth, sensitivity, power consumption, photoelectric conversion efficiency, etc. Among them, photoelectric conversion efficiency is photoelectric The important performance parameters of the detector are used to describe the efficiency of the conversion of incident photons into electrons. Its high and low directly affect the effective reception of the signal. Therefore, the photoelectric conversion efficiency has become one of the important considerations for various manufacturers in the production of photodetectors.
发明内容Summary of the invention
本发明实施例提供了一种光电探测器，用于提高光电转换率。Embodiments of the present invention provide a photodetector for improving photoelectric conversion rate.
本发明第一方面提供了一种光电探测器，包括：衬底、体绝缘层、第一掺杂层、第二掺杂层、第一金属电极、第二金属电极以及包层绝缘层；A first aspect of the present invention provides a photodetector comprising: a substrate, a bulk insulating layer, a first doped layer, a second doped layer, a first metal electrode, a second metal electrode, and a clad insulating layer;
所述衬底上方设置所述体绝缘层、所述体绝缘层上方设置所述第一掺杂层，所述第一掺杂层上方设置所述第二掺杂层，所述第二掺杂层上方设置所述包层绝缘层；The bulk insulating layer is disposed above the substrate, the first doped layer is disposed above the bulk insulating layer, and the second doped layer is disposed over the first doped layer, the second doping The cladding insulating layer is disposed above the layer;
所述第一金属电极一端设置在所述第一掺杂层内部，所述第一金属电极另一端穿过所述包层绝缘层并构成第一电极引线；所述第二金属电极一端设置在所述第二掺杂层内部，所述第二金属电极另一端穿过所述包层绝缘层并构成第二电极引线；One end of the first metal electrode is disposed inside the first doped layer, the other end of the first metal electrode passes through the clad insulating layer and constitutes a first electrode lead; and one end of the second metal electrode is disposed at Inside the second doped layer, the other end of the second metal electrode passes through the clad insulating layer and constitutes a second electrode lead;
所述第二掺杂层向外扩展至少一个延伸体，所述至少一个延伸体内嵌于所述第一掺杂层，所述至少一个延伸体和所述第二掺杂层的材质相同；The second doped layer is outwardly extended with at least one extension body, and the at least one extension body is embedded in the first doped layer, and the at least one extension body and the second doped layer are made of the same material;
其中，所述第一掺杂层为P型掺杂层时，所述第二掺杂层为N型掺杂层； 所述第一掺杂层为N型掺杂层时，所述第二掺杂层为P型掺杂层。Wherein, when the first doped layer is a P-type doped layer, the second doped layer is an N-type doped layer; When the first doped layer is an N-type doped layer, the second doped layer is a P-type doped layer.
结合第一方面，在第一种可能的实现方式中，所述第一掺杂层为P型掺杂层且所述第二掺杂层为N型掺杂层时，所述第一金属电极为P型源极，所述第二金属电极为N型漏极。With reference to the first aspect, in a first possible implementation manner, when the first doped layer is a P-type doped layer and the second doped layer is an N-type doped layer, the first metal electrode As a P-type source, the second metal electrode is an N-type drain.
结合第一方面，在第二种可能的实现方式中，所述第一掺杂层为N型掺杂层且所述第二掺杂层为P型掺杂层时，所述第一金属电极为N型漏极，所述第二金属电极为P型源极。With reference to the first aspect, in a second possible implementation manner, when the first doped layer is an N-type doped layer and the second doped layer is a P-type doped layer, the first metal electrode The N-type drain is a P-type source.
结合第一方面，或者第一方面的第一种可能的实现方式，或者第一方面的第二种可能的实现方式，在第三种可能的实现方式中，所述光电探测器还包括本征区，其中，在所述第一掺杂层与第二掺杂层的接触面之间设置所述本征区。With reference to the first aspect, or the first possible implementation of the first aspect, or the second possible implementation of the first aspect, in a third possible implementation, the photodetector further includes an intrinsic a region, wherein the intrinsic region is disposed between a contact surface of the first doped layer and the second doped layer.
结合第一方面的第三种可能的实现方式，在第四种可能的实现方式中，在所述第二掺杂层的延伸体内嵌于所述第一掺杂层的状态下，所述本征区在所述延伸体的对应位置倾向所述第一掺杂层呈凹陷形状，所述凹陷形状匹配所述延伸体的形状。In conjunction with the third possible implementation of the first aspect, in a fourth possible implementation, in a state in which the extension of the second doped layer is embedded in the first doped layer, The intrinsic region tends to have a concave shape in the corresponding position of the extension body, the concave shape matching the shape of the extension body.
可以看出，本发明实施例提供的光电探测器包括层叠的衬底11、体绝缘层12、第一掺杂层13、第二掺杂层14以及包层绝缘层17，由于第二掺杂层14向外扩展了至少一个延伸体18，且该延伸体18内嵌于第一掺杂层13，其中，至少一个延伸体18和第二掺杂层14的材质相同，因此，在第一掺杂层13与第二掺杂层14的接触面处、以及在第一掺杂层13与第二掺杂层14的延伸体18的接触面处形成PN结，即第一掺杂层13与第二掺杂层14不仅在横向的接触面上形成了PN结，而且第二掺杂层14通过延伸体18在垂直方向上与第一掺杂层13形成了PN结，有效增大光电探测器中PN结的有效面积，那么，在向一端设置在第一掺杂层13的第一金属电极15施加反偏电压，以及向一端设置在第二掺杂层14的第二金属电极16施加反偏电压后，入射光从包层绝缘层17入射到PN结上，PN结上的电子在吸收了入射光的能量后发生跃迁，激发出光生载流子，并在第一金属电极15和第二金属电极16形成的电场作用下光能转换成电信号。在本发明实施例中通过增加PN结面积，提高了光电转换率。It can be seen that the photodetector provided by the embodiment of the present invention includes a stacked substrate 11, a bulk insulating layer 12, a first doped layer 13, a second doped layer 14, and a clad insulating layer 17, due to the second doping. The layer 14 extends outwardly from the at least one extension 18, and the extension 18 is embedded in the first doped layer 13, wherein the at least one extension 18 and the second doped layer 14 are made of the same material, therefore, at the first A PN junction, that is, a first doping layer 13 is formed at a contact surface of the doped layer 13 and the second doped layer 14 and at a contact face of the extension 18 of the first doped layer 13 and the second doped layer 14 The PN junction is formed not only on the lateral contact surface but also on the second doped layer 14 , and the second doped layer 14 forms a PN junction with the first doped layer 13 in the vertical direction through the extension 18, thereby effectively increasing the photoelectricity. The effective area of the PN junction in the detector, then the reverse bias voltage is applied to the first metal electrode 15 disposed at one end of the first doped layer 13, and the second metal electrode 16 disposed at the second doped layer 14 to one end. After the reverse bias voltage is applied, the incident light is incident on the PN junction from the cladding insulating layer 17, and the electrons on the PN junction absorb the incident light. After the energy, a transition occurs to excite the photo-generated carriers, and the light energy is converted into an electrical signal by the electric field formed by the first metal electrode 15 and the second metal electrode 16. In the embodiment of the invention, the photoelectric conversion rate is increased by increasing the PN junction area.
附图说明 DRAWINGS
为了更清楚地说明本发明实施例的技术方案，下面将对实施例描述所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description of the embodiments will be briefly described. It is obvious that the drawings in the following description are only some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without paying any creative work.
图1为本发明实施例提供的光电探测器的侧面剖析图；1 is a side elevational view of a photodetector according to an embodiment of the present invention;
图2为本发明实施例提供的光电探测器的工作原理示意图；2 is a schematic diagram of a working principle of a photodetector according to an embodiment of the present invention;
图3为本发明另一实施例提供的光电探测器的工作原理示意图；FIG. 3 is a schematic diagram of a working principle of a photodetector according to another embodiment of the present invention; FIG.
图4为本发明一些实施例提供的PIN结结构的光电探测器的侧面剖析图；4 is a side cross-sectional view of a photodetector of a PIN junction structure according to some embodiments of the present invention;
图5为本发明一些实施例提供的PN结结构的光电探测器的俯视图。FIG. 5 is a top plan view of a photodetector of a PN junction structure according to some embodiments of the present invention.
具体实施方式detailed description
为使得本发明的发明目的、特征、优点能够更加的明显和易懂，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行描述，显然，下面所描述的实施例仅仅是本发明一部分实施例，而非全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。In order to make the object, the features and the advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention. It is only a part of the embodiments of the invention, not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
本发明的说明书和权利要求书及上述附图中的术语“第一”和“第二”等是用于区别不同的对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、***、产品或设备没有限定于已列出的步骤或单元，而是可选地还包括没有列出的步骤或单元，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first" and "second" and the like in the specification and claims of the present invention and the above drawings are used to distinguish different objects, and are not intended to describe a specific order. Furthermore, the terms "comprises" and "comprising" and "comprising" are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or device that comprises a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units not listed, or alternatively Other steps or units inherent to these processes, methods, products or equipment.
本发明实施例提供了一种光电探测器，用于提高光电转换率。其中，本发明实施例提供的光电探测器可应用于光互连***、光通信***或光信号处理***等。Embodiments of the present invention provide a photodetector for improving photoelectric conversion rate. The photodetector provided by the embodiment of the invention can be applied to an optical interconnect system, an optical communication system or an optical signal processing system.
下面将结合图1～图5对本发明实施例提供的光电探测器进行详细的介绍。其中，图1为本发明实施例提供的光电探测器的侧面剖析图，如图1所示，本发明一些实施例提供的光电探测器可包括：The photodetector provided by the embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 5. 1 is a side view of a photodetector according to an embodiment of the present invention. As shown in FIG. 1 , a photodetector according to some embodiments of the present invention may include:
衬底11、体绝缘层12、第一掺杂层13、第二掺杂层14、第一金属电极 15、第二金属电极16以及包层绝缘层17； Substrate 11, bulk insulating layer 12, first doped layer 13, second doped layer 14, first metal electrode 15, a second metal electrode 16 and a cladding insulating layer 17;
所述衬底11上方设置所述体绝缘层12、所述体绝缘层12上方设置所述第一掺杂层13，所述第一掺杂层13上方设置所述第二掺杂层14，所述第二掺杂层14上方设置所述包层绝缘层17；The first insulating layer 12 is disposed above the substrate 11 , and the first doped layer 13 is disposed above the bulk insulating layer 12 , and the second doped layer 14 is disposed above the first doped layer 13 . The cladding insulating layer 17 is disposed above the second doping layer 14;
所述第一金属电极15一端设置在所述第一掺杂层13内部，所述第一金属电极15另一端穿过所述包层绝缘层17并构成第一电极引线；所述第二金属电极16一端设置在所述第二掺杂层14内部，所述第二金属电极16另一端穿过所述包层绝缘层17并构成第二电极引线；One end of the first metal electrode 15 is disposed inside the first doped layer 13, and the other end of the first metal electrode 15 passes through the clad insulating layer 17 and constitutes a first electrode lead; the second metal One end of the electrode 16 is disposed inside the second doped layer 14, and the other end of the second metal electrode 16 passes through the clad insulating layer 17 and constitutes a second electrode lead;
所述第二掺杂层14向外扩展至少一个延伸体18，所述至少一个延伸体18内嵌于所述第一掺杂层13，所述至少一个延伸体18和所述第二掺杂层14的材质相同；The second doped layer 14 extends outwardly from the at least one extension 18, the at least one extension 18 is embedded in the first doped layer 13, the at least one extension 18 and the second doping Layer 14 is of the same material;
其中，所述第一掺杂层13为P型掺杂层时，所述第二掺杂层14为N型掺杂层；所述第一掺杂层13为N型掺杂层时，所述第二掺杂层14为P型掺杂层。Wherein, when the first doped layer 13 is a P-type doped layer, the second doped layer 14 is an N-type doped layer; when the first doped layer 13 is an N-type doped layer, The second doping layer 14 is a P-type doped layer.
可以看出，在本发明实施例提供的光电探测器中，衬底11、体绝缘层12、第一掺杂层13、第二掺杂层14以及包层绝缘层17为层叠设计，其中，第二掺杂层14向外扩展了至少一个延伸体18，该至少一个延伸体18内嵌于第一掺杂层13，且至少一个延伸体18的材质与第二掺杂层14的材质相同，因此，在第一掺杂层13与第二掺杂层14的接触面处、以及在第一掺杂层13与第二掺杂层14的延伸体18的接触面处形成PN结，即第一掺杂层13与第二掺杂层14不仅在横向的接触面上形成了PN结，而且第二掺杂层14通过延伸体18在垂直方向上与第一掺杂层13形成了PN结，有效增大光电探测器中PN结的有效面积，从而增加单位入射光窗口面积所产生的光生载流子数量，因此，在向一端设置在第一掺杂层13的第一金属电极15施加反偏电压，以及向一端设置在第二掺杂层14的第二金属电极16施加反偏电压后，入射光从包层绝缘层17入射到横向和垂直方向上的PN结上，PN结上的电子在吸收了入射光的能量后发生跃迁，激发出光生载流子，并在第一金属电极15和第二金属电极16形成的电场作用下转换成电信号，提高了光电转换率。It can be seen that, in the photodetector provided by the embodiment of the present invention, the substrate 11, the bulk insulating layer 12, the first doping layer 13, the second doping layer 14, and the clad insulating layer 17 are stacked design, wherein The second doped layer 14 extends outwardly from the at least one extension 18, the at least one extension 18 is embedded in the first doped layer 13, and the material of the at least one extension 18 is the same as the material of the second doped layer 14. Therefore, a PN junction is formed at the contact face of the first doped layer 13 and the second doped layer 14, and at the contact face of the first doped layer 13 and the extension 18 of the second doped layer 14, ie The first doped layer 13 and the second doped layer 14 not only form a PN junction on the lateral contact surface, but the second doped layer 14 forms a PN with the first doped layer 13 in the vertical direction by the extension 18 The junction effectively increases the effective area of the PN junction in the photodetector, thereby increasing the number of photogenerated carriers generated per unit incident light window area, and therefore, the first metal electrode 15 disposed at the first doping layer 13 at one end Applying a reverse bias voltage and applying a reverse bias to the second metal electrode 16 disposed at one end of the second doped layer 14 After the voltage, the incident light is incident from the cladding insulating layer 17 onto the PN junction in the lateral and vertical directions, and the electrons on the PN junction are excited after absorbing the energy of the incident light, exciting the photogenerated carriers, and at the first The electric field formed by the metal electrode 15 and the second metal electrode 16 is converted into an electrical signal to increase the photoelectric conversion rate.
下面将对图1所提供的光电探测器的工作原理进行简单介绍。请参阅图2， 图2为本发明实施例提供的光电探测器的工作原理示意图；如图2所示，21为在第一掺杂层13与第二掺杂层14的接触面、以及在第一掺杂层13与第二掺杂层14的延伸体18的接触面形成的PN结，在光电探测器工作时，通过第一金属电极15和第二金属电极16给PN结施加反偏电压，入射光从包层绝缘层17入射，当入射光入射到PN结时，PN结面积中的电子在吸收入射光的能量之后发生跃迁，激发出光生载流子，在电场作用下转换成电信号。The working principle of the photodetector provided in Fig. 1 will be briefly introduced below. Please refer to Figure 2, 2 is a schematic diagram of a working principle of a photodetector according to an embodiment of the present invention; as shown in FIG. 2, 21 is a contact surface between the first doping layer 13 and the second doping layer 14, and a first doping layer. a PN junction formed on a contact surface with the extension 18 of the second doped layer 14 is applied with a reverse bias voltage to the PN junction through the first metal electrode 15 and the second metal electrode 16 during operation of the photodetector, the incident light is from The cladding insulating layer 17 is incident. When the incident light is incident on the PN junction, the electrons in the PN junction area undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and converting them into electrical signals under the action of the electric field.
从图2看出，本发明实施例中第一掺杂层13与第二掺杂层14在横向接触面形成PN结，且第一掺杂层13与第二掺杂层14的延伸体18在垂直方向接触面中也形成PN结，从而总体上增大了PN结的总面积，使得单位入射光窗口面积所产生的光生载流子数量更多，提高光电转换效率。As shown in FIG. 2, in the embodiment of the present invention, the first doping layer 13 and the second doping layer 14 form a PN junction on the lateral contact surface, and the extension layer 18 of the first doping layer 13 and the second doping layer 14 A PN junction is also formed in the vertical contact surface, thereby increasing the total area of the PN junction as a whole, so that the number of photogenerated carriers generated per unit incident light window area is increased, and the photoelectric conversion efficiency is improved.
另外，从响应速率上看，由于光电探测器的响应速率主要与光生载流子的跃迁时间有关，本方面实施例中，PN结的宽度并未明显增加，因此该光电探测器对响应速度的影响不大。从功耗上看，由于较低反偏电压就可以得到较高的光电转换效率，因此可应用于低功耗要求的场景。In addition, in terms of response rate, since the response rate of the photodetector is mainly related to the transition time of the photogenerated carriers, in the embodiment of the present invention, the width of the PN junction is not significantly increased, so the response speed of the photodetector is Has little effect. In terms of power consumption, higher photoelectric conversion efficiency can be obtained due to lower reverse bias voltage, so it can be applied to scenarios with low power consumption requirements.
下面将对图1所提供的光电探测器的工作原理作进一步分析。结合图2，请参阅图3，图3为本发明另一实施例提供的光电探测器的工作原理示意图；图3是在图2基础上进一步介绍本发明实施例提供的光电探测器的工作原理。在图3中可以看出，由于第二掺杂层14的延伸体18内嵌在第一掺杂层13中，进而第一掺杂层13与第二掺杂层14的延伸体18的接触面形成了垂直于第一掺杂层13的PN结区域，在该光电探测器工作时，入射光在该垂直的PN结区域呈周期折射率变化，可以形成类光栅的光衍射效应，光的行进方向会从垂直方向衍射到水平方向(如图3中的箭头方向所示)，有利于入射光的进一步吸收，实现更高的吸收效率，进一步提升该光电探测器的光电转换效率。The working principle of the photodetector provided in Fig. 1 will be further analyzed below. Referring to FIG. 2, FIG. 3 is a schematic diagram of the working principle of the photodetector according to another embodiment of the present invention; FIG. 3 is a schematic diagram of the working principle of the photodetector provided by the embodiment of the present invention. . As can be seen in FIG. 3, since the extension 18 of the second doped layer 14 is embedded in the first doped layer 13, the contact of the first doped layer 13 with the extension 18 of the second doped layer 14 The surface forms a PN junction region perpendicular to the first doped layer 13. When the photodetector operates, the incident light changes in a periodic refractive index in the vertical PN junction region, and a light diffraction effect of the grating-like grating can be formed. The traveling direction will be diffracted from the vertical direction to the horizontal direction (as indicated by the direction of the arrow in FIG. 3), which is advantageous for further absorption of incident light, achieving higher absorption efficiency, and further improving the photoelectric conversion efficiency of the photodetector.
可以理解，上述图1～图3是对PN结结构的光电探测器的说明，在上述PN结结构的光电探测器的基础上，本发明实施例还提供了一种PIN结结构的光电探测器，如图4所示，与图1所示的PN结结构的光电探测器相比，PIN结结构的光电探测器还包括了本征区19，其中，该本征区19设置在第一掺杂层13与第二掺杂层14的接触面之间。It can be understood that FIG. 1 to FIG. 3 are descriptions of the photodetector of the PN junction structure. On the basis of the photodetector of the PN junction structure, the embodiment of the present invention further provides a photodetector with a PIN junction structure. As shown in FIG. 4, compared with the photodetector of the PN junction structure shown in FIG. 1, the photodetector of the PIN junction structure further includes an intrinsic region 19, wherein the intrinsic region 19 is disposed in the first doping Between the contact surface of the impurity layer 13 and the second doping layer 14.
也就是说，在PIN结结构的光电探测器中，采用本征区19隔离第一掺杂 层13和第二掺杂层14。That is to say, in the photodetector of the PIN junction structure, the intrinsic region 19 is used to isolate the first doping. Layer 13 and second doped layer 14.
在所述延伸体18内嵌于第一掺杂层13的状态下，本征区19在延伸体18的对应位置倾向第一掺杂层13呈凹陷形状。其中，该凹陷形状匹配延伸体18的形状。In a state in which the extension body 18 is embedded in the first doping layer 13, the intrinsic region 19 tends to have a concave shape in the corresponding position of the extension body 18. Therein, the recessed shape matches the shape of the extension 18.
可以理解，本征区19为不掺杂区或者掺杂浓度较低的区域，其使用的材料接近于本征，在外加反向偏置电压时，整个本征区都为耗尽层，都可以用于吸收入射光产生光生载流子。It can be understood that the intrinsic region 19 is an undoped region or a region with a low doping concentration, and the material used is close to the intrinsic. When the reverse bias voltage is applied, the entire intrinsic region is a depletion layer. It can be used to absorb incident light to generate photogenerated carriers.
基于上述介绍，图4提供的PIN结结构的光电探测器中，在第一掺杂层13和第二掺杂层14之间采用本征区19隔离，整个本征区19作为耗尽层，用于吸收入射光，产生光载流子。因此，在PIN结结构的光电探测器中，第一掺杂层13与本征区19的接触面、第二掺杂层14与本征区19的接触面以及整个本征区19作为PIN结，该PIN结替代PN结结构中的PN结。其中，PIN结结构的光电探测器的工作原理如下：在PIN结结构的光电探测器工作时，通过第一金属电极15和第二金属电极16给PIN结施加反偏电压，入射光从包层绝缘层17入射，当入射光入射到PIN结时，PIN结面积中的电子在吸收入射光的能量之后发生跃迁，激发出光生载流子，在电场作用下转换成电信号。Based on the above description, in the photodetector of the PIN junction structure provided in FIG. 4, the intrinsic region 19 is isolated between the first doped layer 13 and the second doped layer 14, and the entire intrinsic region 19 is used as a depletion layer. It is used to absorb incident light and generate photocarriers. Therefore, in the photodetector of the PIN junction structure, the contact face of the first doped layer 13 with the intrinsic region 19, the contact face of the second doped layer 14 with the intrinsic region 19, and the entire intrinsic region 19 serve as PIN junctions. The PIN junction replaces the PN junction in the PN junction structure. The working principle of the photodetector of the PIN junction structure is as follows: when the photodetector of the PIN junction structure is in operation, a reverse bias voltage is applied to the PIN junction through the first metal electrode 15 and the second metal electrode 16, and the incident light is from the cladding layer. The insulating layer 17 is incident. When the incident light is incident on the PIN junction, the electrons in the PIN junction area undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and converting into electrical signals under the action of the electric field.
由于在图4所示的PIN结结构的光电探测器中，第二掺杂层14的延伸体18在内嵌于第一掺杂层13时，使得本征区19在延伸体18的对应位置倾向第一掺杂层13呈凹陷形状，因此，在垂直于第一掺杂层13的方向上也形成了PIN结区域，从而总体上增大了PIN结的总面积，使得单位入射光窗口面积所产生的光生载流子数量更多，提高光电转换效率。Since the extension 18 of the second doped layer 14 is embedded in the first doped layer 13 in the photodetector of the PIN junction structure shown in FIG. 4, the intrinsic region 19 is at the corresponding position of the extension 18 The first doped layer 13 is inclined to have a concave shape, and therefore, a PIN junction region is also formed in a direction perpendicular to the first doped layer 13, thereby increasing the total area of the PIN junction as a whole, so that the unit incident light window area The number of photogenerated carriers generated is larger, and the photoelectric conversion efficiency is improved.
另外，由于入射光在该垂直的PIN结区域呈周期折射率变化，可以形成类光栅的光衍射效应，光的行进方向会从垂直方向衍射到水平方向，有利于入射光的进一步吸收，实现更高的吸收效率，进一步提升该光电探测器的光电转换效率。In addition, since the incident light changes in the periodic refractive index in the vertical PIN junction region, a light diffraction effect of the grating-like grating can be formed, and the traveling direction of the light is diffracted from the vertical direction to the horizontal direction, which is advantageous for further absorption of the incident light, thereby realizing more The high absorption efficiency further enhances the photoelectric conversion efficiency of the photodetector.
需要说明，在本发明实施例中，第二掺杂层14和延伸体18由相同的材质掺杂而成，为一体成型结构。It should be noted that, in the embodiment of the present invention, the second doping layer 14 and the extension body 18 are doped with the same material, and are an integrally formed structure.
在本发明一些可实施的方式中，在生产该光电探测器时，先在底部生成衬底11，接着在衬底11上方生成体绝缘层12，在体绝缘层12上方生成第一掺 杂层13，在完成第一掺杂层13后，在第一掺杂层13中刻蚀出至少一个区域，然后在第一掺杂层13表面通过选择性生长的方式形成第二掺杂层14以及在该区域中形成延伸体18。举例来说，若第一掺杂层13为P型掺杂层，第二掺杂层14为N型掺杂层，在生产该光电探测器时，先在底部生成衬底11，接着在衬底11上方生成体绝缘层12，然后在体绝缘层12上方生成一层半导体硅，然后往半导体硅中掺杂入硼元素，生成了P型掺杂层，然后，用刻蚀的方式，在P型掺杂层上刻蚀出至少一个区域，然后在P型掺杂层上方以及该区域中再生成一层半导体硅，往半导体硅中掺杂磷元素，生成了N型掺杂层，在刻蚀的区域中得到N型掺杂层向外扩展的延伸体18。In some embodiments of the present invention, when the photodetector is produced, the substrate 11 is first formed at the bottom, then the bulk insulating layer 12 is formed over the substrate 11, and the first doping is formed over the bulk insulating layer 12. After the first doped layer 13 is completed, at least one region is etched in the first doped layer 13, and then the second doped layer is formed on the surface of the first doped layer 13 by selective growth. 14 and forming an extension 18 in this region. For example, if the first doped layer 13 is a P-type doped layer and the second doped layer 14 is an N-type doped layer, in the production of the photodetector, the substrate 11 is first formed at the bottom, followed by lining A bulk insulating layer 12 is formed on the bottom of the bottom 11, and then a layer of semiconductor silicon is formed over the bulk insulating layer 12, and then boron is doped into the semiconductor silicon to form a P-type doped layer, and then, by etching, At least one region is etched on the P-type doped layer, and then a layer of semiconductor silicon is formed over the P-type doped layer and in the region, and the semiconductor silicon is doped with phosphorus to form an N-type doped layer. An extension 18 of the N-type doped layer that expands outward is obtained in the etched region.
在本发明另一些可实施的方式中，在生产该光电探测器时，先在底部生成衬底11，接着在衬底11上方生成体绝缘层12，而第一掺杂层13、第二掺杂层14以及扩展的延伸体18可以通过定义不同光刻区域、然后在相应的光刻区域分别进行离子注入并通过快速高温退火激活形成。In other embodiments of the present invention, in the production of the photodetector, the substrate 11 is first formed at the bottom, and then the bulk insulating layer 12 is formed over the substrate 11, and the first doped layer 13 and the second doped layer The hybrid layer 14 and the extended extension 18 can be formed by defining different lithographic regions, then ion implantation separately in the respective lithographic regions, and activation by rapid high temperature annealing.
可选地，延伸体18可以为任意形状的几何体，例如柱体、椎体、台体、长方体等。因此，在生产光电探测器时，若通过在第一掺杂层13刻蚀区域的方式来生成第二掺杂层14的延伸体18的方式，那么刻蚀出的区域的形状相应地为柱体、椎体、台体、长方体等。同样，如果采用先定义不同光刻区域的方式，延伸体18所在位置的光刻区域也相应为柱体、椎体、台体、长方体等。Alternatively, the extension 18 can be any shape of geometry, such as a cylinder, a vertebral body, a pedestal, a cuboid, and the like. Therefore, when the photodetector is produced, if the extension 18 of the second doped layer 14 is formed by etching the region in the first doped layer 13, the shape of the etched region is correspondingly the pillar. Body, vertebral body, table body, cuboid, etc. Similarly, if a different lithographic area is defined first, the lithographic area where the extension 18 is located is also a cylinder, a vertebral body, a pedestal, a rectangular parallelepiped or the like.
其中，本发明实施例中第一金属电极15可以为P型源极或者N型漏极，相应地，第二金属电极16可以为N型漏极或者P型源极，具体包括如下两种情况：The first metal electrode 15 in the embodiment of the present invention may be a P-type source or an N-type drain. Correspondingly, the second metal electrode 16 may be an N-type drain or a P-type source, and specifically includes the following two cases. :
A1、当第一掺杂层13为P型掺杂层，且第二掺杂层14为N型掺杂层时，第一金属电极15为P型源极，第二金属电极16为N型漏极；A1, when the first doped layer 13 is a P-type doped layer, and the second doped layer 14 is an N-type doped layer, the first metal electrode 15 is a P-type source, and the second metal electrode 16 is an N-type Drain
A2、当第一掺杂层13为N型掺杂层，第二掺杂层14为P型掺杂层时，第一金属电极15为N型漏极，第二金属电极16为P型源极。A2, when the first doped layer 13 is an N-type doped layer, and the second doped layer 14 is a P-type doped layer, the first metal electrode 15 is an N-type drain, and the second metal electrode 16 is a P-type source. pole.
可选地，在本发明实施例中，该光电探测器中的第二掺杂层14呈梳子形状。Optionally, in the embodiment of the invention, the second doped layer 14 in the photodetector has a comb shape.
其中，第一掺杂层13的材质为半导体材料，上述第二掺杂层14的材质为半导体材料。可选地，该半导体材料可以为硅、锗或者三五族化合物材料。 The material of the first doping layer 13 is a semiconductor material, and the material of the second doping layer 14 is a semiconductor material. Alternatively, the semiconductor material may be a silicon, germanium or tri-five compound material.
举例来说，请参阅图5，图5为本发明一些实施例提供的PN结结构的光电探测器的俯视图；在图5中，本发明实施例的PN结结构的光电探测器的入射窗口为圆形结构，在图5中，该PN结结构的光电探测器的底部为N型掺杂层，顶部为P型掺杂层，在N型掺杂层外形成环形N型漏极，在P型掺杂层外形成环形P型源极，N型漏极向外引出电极引线，同样，P型漏极向外引出电极引线。图5中的小圆圈用以表示P型掺杂层外扩的延伸体18，该延伸体18内嵌在N型掺杂层中，并且在图5中以12个延伸体18为例，入射光从圆形入射窗口入射后，PN结处的电子在吸收入射光的能量之后，转换成电信号，然后从P型源极和N型漏极输出电信号。For example, please refer to FIG. 5. FIG. 5 is a top view of a photodetector of a PN junction structure according to some embodiments of the present invention; in FIG. 5, an incident window of a photodetector of a PN junction structure according to an embodiment of the present invention is A circular structure, in FIG. 5, the bottom of the photodetector of the PN junction structure is an N-type doped layer, the top is a P-type doped layer, and a ring-shaped N-type drain is formed outside the N-type doped layer, at P An annular P-type source is formed outside the doped layer, and an N-type drain leads the electrode lead outward. Similarly, the P-type drain leads the electrode lead outward. The small circle in FIG. 5 is used to indicate the P-type doped layer flared extension 18, which is embedded in the N-type doped layer, and in FIG. 5, 12 extensions 18 are taken as an example, incident. After the light is incident from the circular incident window, the electrons at the PN junction are converted into electrical signals after absorbing the energy of the incident light, and then output electrical signals from the P-type source and the N-type drain.
需要说明，图5仅给出PN结结构的光电探测器的一个实施例，本发明实施例的光电探测器的光入射窗口除了图5所示的圆形结构，还可以是其它形状。在例如图5所示的俯视图中，延伸体18的俯视图的投影形状根据延伸体18的实际形状改变，例如，延伸体18的形状为圆柱时，俯视图的投影如图5所述的圆形，延伸体18的形状为三面柱体时，其俯视图的投影形状为三角形，在此不作限定。It should be noted that FIG. 5 only shows an embodiment of the photodetector of the PN junction structure. The light incident window of the photodetector of the embodiment of the present invention may have other shapes in addition to the circular structure shown in FIG. 5. In a top view such as that shown in FIG. 5, the projected shape of the top view of the extension 18 changes according to the actual shape of the extension 18. For example, when the shape of the extension 18 is a cylinder, the projection of the top view is circular as shown in FIG. When the shape of the extension body 18 is a three-sided cylinder, the projection shape of the plan view is a triangle, which is not limited herein.
举例来说，上述实施例提供的PN结结构的光电探测器或者PIN结结构的光电探测器可应用在光互连***中，该光电探测器通过P型源极和N型漏极与光互连***中的光接收模块连接，该光电探测器还通过P型源极和N型漏极与外部电路连接，通过外部电路给光电探测器中的PN结或者PIN结施加反偏电压，光电探测器开始工作，入射光从绝缘层入射进来，在入射光入射到PN结或者PIN结中时，激发出光生载流子，在电场作用下形成电信号，经过P型源极和N型漏极输出到光接收模块，光接收模块完成对电信号的后续操作。For example, the photodetector of the PN junction structure or the photodetector of the PIN junction structure provided by the above embodiments can be applied in an optical interconnection system, and the photodetector passes through a P-type source and an N-type drain and light. Connected to the light receiving module in the system, the photodetector is also connected to an external circuit through a P-type source and an N-type drain, and a reverse bias voltage is applied to the PN junction or the PIN junction in the photodetector through an external circuit, and photodetection is performed. The device starts to work, the incident light is incident from the insulating layer, and when the incident light is incident on the PN junction or the PIN junction, the photo-generated carriers are excited, and an electric signal is formed under the electric field, and the P-type source and the N-type drain are passed. Output to the light receiving module, the light receiving module completes the subsequent operation of the electrical signal.
综上所述，本发明实施例提供的光电探测器包括层叠的衬底11、体绝缘层12、第一掺杂层13、第二掺杂层14以及包层绝缘层17，由于第二掺杂层14向外扩展了至少一个延伸体18，且该延伸体18内嵌于第一掺杂层13，其中，至少一个延伸体18和第二掺杂层14的材质相同，因此，在第一掺杂层13与第二掺杂层14的接触面处、以及第一掺杂层13与第二掺杂层14的延伸体18的接触面处形成PN结，即第一掺杂层13与第二掺杂层14不仅在横向 的接触面上形成了PN结，而且第二掺杂层14通过延伸体18在垂直方向上与第一掺杂层13形成了PN结，有效增大光电探测器中PN结的有效面积，那么，在向一端设置在第一掺杂层13的第一金属电极15施加反偏电压，以及向一端设置在第二掺杂层14的第二金属电极16施加反偏电压后，入射光从包层绝缘层17入射到PN结上，PN结上的电子在吸收了入射光的能量后发生跃迁，激发出光生载流子，并在第一金属电极15和第二金属电极16形成的电场作用下光能转换成电信号，提高了光电转换率。In summary, the photodetector provided by the embodiment of the present invention includes a stacked substrate 11, a bulk insulating layer 12, a first doped layer 13, a second doped layer 14, and a clad insulating layer 17, due to the second doping The impurity layer 14 extends outwardly from the at least one extension body 18, and the extension body 18 is embedded in the first doping layer 13, wherein the at least one extension body 18 and the second doping layer 14 are made of the same material, therefore, A PN junction, that is, a first doping layer 13 is formed at a contact surface of a doped layer 13 and a second doped layer 14 and at a contact surface of the extension 18 of the first doped layer 13 and the second doped layer 14 And the second doped layer 14 not only in the lateral direction a PN junction is formed on the contact surface, and the second doped layer 14 forms a PN junction with the first doped layer 13 in the vertical direction through the extension 18, thereby effectively increasing the effective area of the PN junction in the photodetector, Applying a reverse bias voltage to the first metal electrode 15 disposed at one end of the first doped layer 13 and applying a reverse bias voltage to the second metal electrode 16 disposed at one end of the second doped layer 14 The layer insulating layer 17 is incident on the PN junction, and electrons on the PN junction undergo a transition after absorbing the energy of the incident light, exciting the photogenerated carriers, and an electric field formed at the first metal electrode 15 and the second metal electrode 16 The lower light energy is converted into an electrical signal, which improves the photoelectric conversion rate.
以上对本发明实施例所提供的一种光电探测器进行了详细介绍，对于本领域的一般技术人员，依据本发明实施例的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明实施例的限制。 The above is a detailed description of a photodetector provided by an embodiment of the present invention. For those skilled in the art, according to the idea of the embodiment of the present invention, there are changes in the specific implementation manner and application range. The description herein is not to be construed as limiting the embodiments of the invention.

Claims (7)

  1. 一种光电探测器，其特征在于，包括：衬底(11)、体绝缘层(12)、第一掺杂层(13)、第二掺杂层(14)、第一金属电极(15)、第二金属电极(16)以及包层绝缘层(17)；A photodetector comprising: a substrate (11), a bulk insulating layer (12), a first doped layer (13), a second doped layer (14), and a first metal electrode (15) a second metal electrode (16) and a cladding insulating layer (17);
    所述衬底(11)上方设置所述体绝缘层(12)、所述体绝缘层(12)上方设置所述第一掺杂层(13)，所述第一掺杂层(13)上方设置所述第二掺杂层(14)，所述第二掺杂层(14)上方设置所述包层绝缘层(17)；The bulk insulating layer (12) is disposed above the substrate (11), and the first doped layer (13) is disposed above the bulk insulating layer (12), above the first doped layer (13) The second doped layer (14) is disposed, and the cladding insulating layer (17) is disposed above the second doped layer (14);
    所述第一金属电极(15)一端设置在所述第一掺杂层(13)内部，所述第一金属电极(15)另一端穿过所述包层绝缘层(17)并构成第一电极引线；所述第二金属电极(16)一端设置在所述第二掺杂层(14)内部，所述第二金属电极(16)另一端穿过所述包层绝缘层(17)并构成第二电极引线；One end of the first metal electrode (15) is disposed inside the first doped layer (13), and the other end of the first metal electrode (15) passes through the clad insulating layer (17) and constitutes a first An electrode lead; one end of the second metal electrode (16) is disposed inside the second doped layer (14), and the other end of the second metal electrode (16) passes through the clad insulating layer (17) Forming a second electrode lead;
    所述第二掺杂层(14)向外扩展至少一个延伸体(18)，所述至少一个延伸体(18)内嵌于所述第一掺杂层(13)，所述至少一个延伸体(18)和所述第二掺杂层(14)的材质相同；The second doped layer (14) extends outwardly at least one extension (18), the at least one extension (18) is embedded in the first doped layer (13), the at least one extension (18) and the second doped layer (14) are of the same material;
    其中，所述第一掺杂层(13)为P型掺杂层时，所述第二掺杂层(14)为N型掺杂层；所述第一掺杂层(13)为N型掺杂层时，所述第二掺杂层(14)为P型掺杂层。Wherein, when the first doped layer (13) is a P-type doped layer, the second doped layer (14) is an N-type doped layer; the first doped layer (13) is an N-type When the layer is doped, the second doped layer (14) is a P-type doped layer.
  2. 根据权利要求1所述的光电探测器，其特征在于，The photodetector of claim 1 wherein:
    所述第一掺杂层(13)为P型掺杂层且所述第二掺杂层(14)为N型掺杂层时，所述第一金属电极(15)为P型源极，所述第二金属电极(16)为N型漏极。When the first doped layer (13) is a P-type doped layer and the second doped layer (14) is an N-type doped layer, the first metal electrode (15) is a P-type source. The second metal electrode (16) is an N-type drain.
  3. 根据权利要求1所述的光电探测器，其特征在于，The photodetector of claim 1 wherein:
    所述第一掺杂层(13)为N型掺杂层且所述第二掺杂层(14)为P型掺杂层时，所述第一金属电极(15)为N型漏极，所述第二金属电极(16)为P型源极。When the first doped layer (13) is an N-type doped layer and the second doped layer (14) is a P-type doped layer, the first metal electrode (15) is an N-type drain. The second metal electrode (16) is a P-type source.
  4. 根据权利要求1～3任一项所述的光电探测器，其特征在于，A photodetector according to any one of claims 1 to 3, characterized in that
    所述光电探测器还包括本征区(19)，其中，在所述第一掺杂层(13)与第二掺杂层(14)的接触面之间设置所述本征区(19)。The photodetector further includes an intrinsic region (19), wherein the intrinsic region (19) is disposed between the contact faces of the first doped layer (13) and the second doped layer (14) .
  5. 根据权利要求4所述的光电探测器，其特征在于， A photodetector according to claim 4, wherein
    在所述第二掺杂层(14)的延伸体(18)内嵌于所述第一掺杂层(13)的状态下，所述本征区(19)在所述延伸体(18)的对应位置倾向所述第一掺杂层(13)呈凹陷形状，所述凹陷形状匹配所述延伸体(18)的形状。In the state in which the extension (18) of the second doped layer (14) is embedded in the first doped layer (13), the intrinsic region (19) is in the extension (18) The corresponding position tends to have the first doped layer (13) in a concave shape that matches the shape of the extension (18).
  6. 根据权利要求1～5任一项所述的光电探测器，其特征在于，The photodetector according to any one of claims 1 to 5, wherein
    所述第二掺杂层(14)呈梳子形状。The second doped layer (14) has a comb shape.
  7. 根据权利要求1～6任一项所述的光电探测器，其特征在于，The photodetector according to any one of claims 1 to 6, wherein
    所述第一掺杂层(13)的材质为半导体材料，所述第二掺杂层(14)的材质为半导体材料，所述半导体材料为硅、锗或者三五族化合物材料。 The material of the first doped layer (13) is a semiconductor material, and the material of the second doped layer (14) is a semiconductor material, and the semiconductor material is a silicon, germanium or a tri-five compound material.
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