WO2016147891A1 - フッ化ランタン単結晶及び光学部品 - Google Patents
フッ化ランタン単結晶及び光学部品 Download PDFInfo
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- WO2016147891A1 WO2016147891A1 PCT/JP2016/056640 JP2016056640W WO2016147891A1 WO 2016147891 A1 WO2016147891 A1 WO 2016147891A1 JP 2016056640 W JP2016056640 W JP 2016056640W WO 2016147891 A1 WO2016147891 A1 WO 2016147891A1
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- lanthanum fluoride
- crystal
- fluoride single
- single crystal
- fluoride
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/406—Cells and probes with solid electrolytes
- G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
- G01N27/4073—Composition or fabrication of the solid electrolyte
- G01N27/4074—Composition or fabrication of the solid electrolyte for detection of gases other than oxygen
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2935—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using ionisation detectors
Definitions
- the present invention relates to a laser phase plate, and a lanthanum fluoride single crystal that can be suitably used for laser processing machines, lenses for gas detectors, flame detectors, infrared cameras, optical window materials, and the like.
- Infrared window materials are materials that support advanced technology, and in recent years, window materials that transmit infrared light having longer wavelengths are being developed.
- infrared lasers such as carbon dioxide lasers are used for processing automobile parts and steel because of their low attenuation in the atmosphere.
- carbon dioxide laser used in the current laser beam machine there is an influence at the time of cutting due to the difference between p-polarized light and s-polarized light.
- a reflector that reflects infrared light is used to control the degree of polarization of the laser beam.
- the laser processing machine is enlarged and the optical axis is difficult to adjust or the beam diameter is deteriorated, and alternative methods and materials are required. It was.
- the lanthanum fluoride single crystal is a trigonal crystal and can be used as an optical component such as a phase plate for laser and an optical window material (Patent Documents 1 to 3).
- the lanthanum fluoride single crystal is prone to decrease in permeability due to white turbidity during production, and the white turbid fluoride single crystal has a problem that it cannot be used as an optical component such as the phase plate for lasers or optical window materials. there were.
- the materials described in Patent Documents 1 to 3 are assumed to be used for applications that transmit light in the ultraviolet region, such as excimer lasers. Absent.
- the present invention is a lanthanum fluoride which has high transparency in the infrared region and can be suitably used for laser phase plates, lenses for laser processing machines, gas detectors, flame detectors, infrared cameras, optical window materials, etc.
- the object is to provide single crystals and optical components.
- the inventors have obtained high transmittance in the infrared region by adding an alkaline earth metal to the lanthanum fluoride single crystal.
- the present inventors have found that a lanthanum fluoride single crystal having the above can be obtained, and that such a lanthanum fluoride single crystal can be suitably used as an optical component, thereby completing the present invention.
- the first aspect of the present invention is a lanthanum fluoride single crystal to which alkaline earth metal is added and the internal transmittance of light having a wavelength of 9.3 ⁇ m is 85% / mm or more. is there.
- the “internal transmittance” means a transmittance excluding surface reflection loss generated on the incident side and outgoing side surfaces of the lanthanum fluoride single crystal when light is transmitted through the lanthanum fluoride single crystal. And expressed as a value per 1 mm of the optical path length.
- the transmittance including the surface reflection loss of each of the pair of lanthanum fluoride single crystals having different thicknesses is measured and substituted into the following formula (1). You can ask for it.
- the second aspect of the present invention is an optical component comprising the lanthanum fluoride single crystal according to the first aspect of the present invention.
- the optical component according to the second aspect of the present invention may have an antireflection film on the surface.
- the optical component according to the second aspect of the present invention is preferably used for the purpose of transmitting an infrared laser.
- lanthanum fluoride single crystal containing an alkaline earth metal of the present invention a crystal having high infrared transmittance and no cloudiness can be obtained.
- a lanthanum fluoride single crystal can be suitably used for a laser phase plate and optical parts such as a laser processing machine, a gas detector, a flame detector, an infrared camera, and an optical window material.
- a first aspect of the present invention is a lanthanum fluoride single crystal to which an alkaline earth metal is added and the internal transmittance of light having a wavelength of 9.3 ⁇ m is 85% / mm or more.
- the alkaline earth metal in the present invention magnesium, calcium, strontium, barium and the like can be used freely. It is preferable to use strontium or barium as the alkaline earth metal because the difference in ionic radius with lanthanum, which is the mother crystal, is small. When the alkaline earth metal used is barium, the difference in ionic radius from lanthanum, which is the mother crystal, is the smallest, and more preferable.
- the amount of the alkaline earth metal added is preferably from 0.1 to 30 mol%, more preferably from 1 to 20 mol%, still more preferably from 3 to 10 mol%, based on a total of 100 mol% with lanthanum. . If the amount of alkaline earth metal added is too small, the effect of suppressing white turbidity during growth is not observed.
- the amount of the alkaline earth metal added is large and about 30 to 50 mol%, the eutectic is composed of lanthanum fluoride and barium fluoride. That is, the crystal is not a lanthanum fluoride single crystal. When the eutectic is formed, the entire crystal becomes white, and the light transmittance is significantly reduced.
- the amount of the alkaline earth metal is further increased and exceeds about 50 mol%, a solid solution having a barium fluoride type crystal structure is obtained. Since the solid solution is isotropic, it is not suitable for use as a phase plate for laser.
- a known apparatus can be used without limitation.
- the device be capable of measurement using a gas that does not absorb in the infrared region such as Ar and nitrogen.
- the lanthanum fluoride single crystal of the present invention has an internal transmittance of 85% / mm or more for light having a wavelength of 9.3 ⁇ m. Preferably it is 90% / mm or more, Most preferably, it is 94% / mm or more.
- the carbon dioxide laser has an emission wavelength of 9.3 ⁇ m and 10.6 ⁇ m, and this crystal having a high transmittance of 9.3 ⁇ m is useful as a phase plate for such a laser.
- the lanthanum fluoride single crystal is a colorless and transparent crystal and belongs to a trigonal crystal.
- the crystals have good chemical stability, and in normal use, no performance deterioration is observed in a short period of time.
- the mechanical strength and workability are also good, and it can be used after being processed into a desired shape.
- the second aspect of the present invention is an optical component comprising the lanthanum fluoride single crystal according to the first aspect of the present invention.
- the lanthanum fluoride single crystal according to the first aspect of the present invention can be used without limitation for various optical components.
- Specific examples of the optical component according to the second aspect of the present invention include a laser phase plate, a laser processing machine, a gas detector, a flame detector, a lens such as an infrared camera, and an optical window material.
- it can be suitably used for an optical component used for the purpose of transmitting an infrared laser by utilizing the good transmittance of light having a wavelength of 9.3 ⁇ m.
- it can be suitably used for an infrared laser phase plate, an optical window material that transmits an infrared laser, and the like.
- a known laser such as a semiconductor laser, a YAG laser, a YVO 4 laser, and a carbon dioxide gas laser
- a carbon dioxide laser is an efficient laser centering on an emission wavelength of 9.3 ⁇ m, and is suitable for the use of the lanthanum fluoride single crystal of the present invention.
- the optical component of the present invention may have an antireflection film on the surface.
- the material of the antireflection film magnesium fluoride, barium fluoride, aluminum fluoride, yttrium fluoride, lanthanum fluoride, ytterbium fluoride, zirconium fluoride, hafnium fluoride, aluminum oxide, yttrium oxide, dioxide dioxide Silicon, tantalum oxide, zinc sulfide, germanium, fluororesin, or the like can be preferably used, and a multilayer film in which films made of the materials are combined is preferably used as the antireflection film.
- a method for forming the antireflection film on the surface of the lanthanum fluoride single crystal is not particularly limited, and the antireflection film can be formed by a known method such as a vacuum deposition method, a sputtering method, or a CVD method.
- a vacuum deposition method such as a vacuum deposition method, a sputtering method, or a CVD method.
- a known crystal growth method can be applied without limitation.
- it can be produced by mixing and melting a lanthanum fluoride raw material and an alkaline earth metal fluoride raw material at a desired ratio and then solidifying them into a single crystal.
- a crucible lowering method in which a crystal is grown in a crucible by cooling the melt of the crystal production raw material in the crucible while gradually lowering the whole crucible, crystal production in the crucible
- a melt pulling method in which a seed crystal composed of a target crystal is brought into contact with the melt interface of the raw material, and then the seed crystal is gradually pulled up from the heating region of the crucible and cooled to grow a crystal below the seed crystal;
- a method such as a micro melting pulling method in which a melt is leached from a hole provided at the bottom of the crucible, and the leached melt is pulled down to grow a crystal.
- the melt pulling method can be used preferably in the present invention because it can grow large crystals compared to the micro melt pulling down method and can grow crystals while suppressing the influence of crystal distortion compared to the crucible lowering method.
- the melt pulling method is a manufacturing method in which a crucible 1 is filled with a raw material and a crystal is pulled up from a seed 3 attached to a seed pulling rod 2 using an apparatus as shown in FIG.
- the material of the heater 4 the heat insulating material 5, the top plate 6, and the cradle 7 to be used, graphite, glassy graphite, silicon carbide-deposited graphite, etc. are usually used, but other materials can be used without any problem. it can.
- the crucible 1 is filled with a predetermined amount of raw material.
- the shape of the crucible is not particularly limited.
- the lanthanum fluoride single crystal of the present invention can be grown in either a single crucible or a double crucible.
- the purity of the raw material is not particularly limited, but the purity is 99.99 vol. % Or more of metal fluoride is preferably used.
- the crucible 1 filled with the metal fluoride, the heater 4, the heat insulating material 5, the top plate 6, and the cradle 7 are set as shown in FIG.
- the furnace is evacuated using a vacuum evacuation device.
- a solid scavenger or a gas scavenger in order to avoid the influence of oxygen and moisture that cannot be removed even by evacuation operation.
- the solid scavenger known solid scavengers such as zinc fluoride and lead fluoride can be used without limitation.
- the gas scavenger methane tetrafluoride, carbonyl fluoride, or the like can be used. It is preferred to use a gas scavenger to avoid crystal quality degradation due to residual scavenger.
- a gas scavenger When a gas scavenger is used, it is introduced into the furnace after being evacuated and mixed with a single substance in the furnace or an inert gas such as high-purity argon. In order to activate the scavenger, it is preferable to heat using the high-frequency coil 8 until the temperature inside the crucible becomes 400K to 1800K. In this step, oxygen and moisture contained in the metal fluoride can be removed. Furthermore, oxygen and moisture remaining in the apparatus for heat-treating the metal fluoride can also be removed.
- an inert gas such as high-purity argon, or a gas scavenger such as carbonyl fluoride or tetrafluoromethane can be used alone, or these can be mixed at an arbitrary ratio. .
- the target lanthanum fluoride single crystal can be obtained by pulling continuously at a constant pulling rate.
- the pulling speed is not particularly limited, but is preferably in the range of 0.5 to 10 mm / hr.
- the obtained lanthanum fluoride single crystal has good processability and can be easily processed into a desired shape and used.
- a known blade saw, wire saw, or other cutting machine, grinding machine, or polishing machine can be used without any limitation.
- the lanthanum fluoride single crystal in the present invention is suitable for producing optical components having all shapes and all orientations.
- processing can be performed while suppressing the generation of cracks, which is effective in reducing manufacturing costs and effective in manufacturing optical window materials and lenses.
- the obtained lanthanum fluoride single crystal can be processed into a desired shape and used for arbitrary applications such as laser phase plate, gas detection, flame detection, infrared camera, optical window material, and the like.
- phase plate When used as a phase plate for a laser, it is preferable to perform processing so that the c-axis is perpendicular to the incident light in order to maximize the birefringence effect of the trigonal crystal.
- Example 1 (Preparation for training) A lanthanum fluoride single crystal to which an alkaline earth metal was added was grown using the crystal production apparatus shown in FIG.
- the raw material has a purity of 99.99 vol. % Barium fluoride and lanthanum fluoride were used.
- the crucible 1, the seed pulling rod 2, the heater 4, the heat insulating material 5, the top plate 6 and the cradle 7 were made of high purity carbon.
- the high frequency heating coil 8 is used to heat and melt the raw material to the melting point of lanthanum fluoride, and while adjusting the high frequency output and changing the temperature of the raw material melt, the seed 3 is pulled down and brought into contact with the melt. It was. While adjusting the output of the high frequency, the pulling was started and crystallization was started. The crystal was continuously pulled up at a speed of 3 mm / hr for 24 hours, and finally a crystal having a diameter of 55 mm and a length of 72 mm was obtained. The obtained crystal was subjected to SEM / EDS analysis, and it was confirmed that 5.08 mol% of barium was contained in the crystal.
- the obtained crystal was cut into a length of about 15 mm by a blade saw equipped with a diamond cutting grindstone, and the side surface was ground to obtain a shape having a length of 15 mm, a width of 2 mm, and a thickness (d 1 ) of 1 mm, and a length of 15 mm, width 2 mm, thickness (d 2 ) processed into a shape of 5 mm, each of the 15 mm length and 2 mm width surfaces as infrared light transmission surfaces, the infrared light transmission surface is subjected to optical polishing, These were used as samples for spectrum measurement.
- a transmittance measurement for light having a wavelength of 9.3 ⁇ m was performed in a nitrogen atmosphere, and for each of the samples having thicknesses d 1 and d 2 , The transmittances T 1 and T 2 including the surface reflection loss were measured.
- the internal transmittance ( ⁇ 1 ) per 1 mm of the optical path length was calculated by substituting the thicknesses d 1 and d 2 and the transmittances T 1 and T 2 into the above formula (1) (Table 1).
- Example 2 In the growth preparation step, crystal growth was performed in the same manner as in Example 1 except that 18 g of barium fluoride and 1982 g of lanthanum fluoride were respectively weighed to prepare a spectrum measurement sample, and a transmittance measurement of 9.3 ⁇ m was performed. (Table 1). The obtained crystal was subjected to SEM / EDS analysis, and it was confirmed that 2.23 mol% of barium was contained in the crystal.
- Example 3 In the growth preparation step, crystal growth was performed in the same manner as in Example 1 except that 181 g of barium fluoride and 1819 g of lanthanum fluoride were respectively weighed to prepare a spectrum measurement sample, and a transmittance measurement of 9.3 ⁇ m was performed. (Table 1). The obtained crystal was subjected to SEM / EDS analysis, and it was confirmed that 8.54 mol% of barium was contained in the crystal.
- Example 4 In the growth preparation step, crystal growth was performed in the same manner as in Example 1 except that 273 g of barium fluoride and 1727 g of lanthanum fluoride were respectively weighed to prepare a sample for spectrum measurement, and a transmittance measurement of 9.3 ⁇ m was performed. (Table 1). The obtained crystal was subjected to SEM / EDS analysis, and it was confirmed that 11.65 mol% of barium was contained in the crystal.
- Example 5 In the growth preparation step, crystal growth was performed in the same manner as in Example 1 except that 366 g of barium fluoride and 1634 g of lanthanum fluoride were respectively weighed, a sample for spectrum measurement was prepared, and a transmittance measurement of 9.3 ⁇ m was performed. (Table 1). The obtained crystal was subjected to SEM / EDS analysis, and it was confirmed that 16.22 mol% of barium was contained in the crystal.
- Comparative Example 1 In the growth preparation step, crystal growth was performed in the same manner as in Example 1 except that only 2000 g of lanthanum fluoride was weighed, a spectrum measurement sample was prepared, and a transmittance measurement of 9.3 ⁇ m was performed (Table 1). .
- crucible 2 seed lifting rod 3: seed 4: heater 5: heat insulating material 6: top plate 7: cradle 8: high frequency coil
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Abstract
Description
(式中、d1及びd2は、一対の上記フッ化ランタン単結晶のmm単位の厚さを示し、d2>d1である。また、T1及びT2は、それぞれ厚さがd1及びd2のフッ化ランタン単結晶の表面反射損失を含む透過率を示す)
本発明におけるフッ化ランタン単結晶は、全ての形状と全ての配向の光学部品を製造するのに適している。中でもc面に沿って加工を行うとき、クラックの発生を抑制しつつ加工を行うことができ、製造コストの削減に有効であり、光学窓材やレンズの製造に有効である。
(育成準備)
図1に示す結晶製造装置を用いて、アルカリ土類金属が添加されたフッ化ランタン単結晶を育成した。原料としては、純度が99.99vol.%のフッ化バリウム、及びフッ化ランタンを用いた。坩堝1、シード引き上げ棒2、ヒーター4、断熱材5、天板6及び受け台7は、高純度カーボン製のものを使用した。
次いで、油回転ポンプ及び油拡散ポンプからなる真空排気装置を用いて、炉内を5.0×10-4Paまで真空排気を行った。同時に、真空排気時の坩堝1内部の温度は570Kとなるよう、高周波コイル8を用いて加熱を行った。
アルゴン95vol.%-四フッ化メタン5vol.%混合ガスを炉内に導入し、高周波コイル8を用いて加熱温度が1270Kとなるよう高周波加熱コイル8の出力を調整した。混合ガス置換後の炉内の圧力は大気圧とし、この状態で2時間加熱を継続した。
次に、高周波加熱コイル8による過熱を継続したまま、真空排気を行い、さらに炉内にアルゴンガスを導入してガス置換を行った。アルゴンガス置換後の炉内の圧力は大気圧とした。
高周波加熱コイル8を用いて、原料をフッ化ランタンの融点まで加熱して溶融せしめ、高周波の出力を調整して原料融液の温度を変化させながら、シード3を引き下げて、融液と接触せしめた。高周波の出力を調整しながら、引き上げを開始して結晶化を開始した。3mm/hrの速度で連続的に24時間引き上げ、最終的に直胴の直径55mm、長さ72mmの結晶を得た。得られた結晶について、SEM/EDS分析を行い、この結晶中にバリウムが5.08モル%含まれていることを確認した。
得られた結晶を、ダイヤモンド切断砥石を備えたブレードソーによって約15mmの長さに切断し、側面を研削して長さ15mm、幅2mm、厚さ(d1)1mmの形状、及び、長さ15mm、幅2mm、厚さ(d2)5mmの形状に加工し、それぞれ長さ15mm、幅2mmの2つの面を赤外光の透過面とし、当該赤外光透過面に光学研磨を施し、これらをスペクトル測定用試料とした。フーリエ変換赤外分光光度計(日本電子製、形式JIR-7000)を用いて、窒素雰囲気下で波長9.3μmの光に対する透過率測定を行い、厚さd1、d2の各試料について、表面反射損失を含む透過率T1、T2を測定した。厚さd1、d2及び透過率T1、T2を上記式(1)に代入することによって該光路長1mm当りの内部透過率(τ1)を算出した(表1)。
育成準備の工程において、フッ化バリウム18g、及びフッ化ランタン1982gをそれぞれ秤量した以外は実施例1と同様にして結晶育成を行い、スペクトル測定用試料を作製し、9.3μmの透過率測定を行った(表1)。得られた結晶について、SEM/EDS分析を行い、この結晶中にバリウムが2.23モル%含まれていることを確認した。
育成準備の工程において、フッ化バリウム181g、及びフッ化ランタン1819gをそれぞれ秤量した以外は実施例1と同様にして結晶育成を行い、スペクトル測定用試料を作製し、9.3μmの透過率測定を行った(表1)。得られた結晶について、SEM/EDS分析を行い、この結晶中にバリウムが8.54モル%含まれていることを確認した。
育成準備の工程において、フッ化バリウム273g、及びフッ化ランタン1727gをそれぞれ秤量した以外は実施例1と同様にして結晶育成を行い、スペクトル測定用試料を作製し、9.3μmの透過率測定を行った(表1)。得られた結晶について、SEM/EDS分析を行い、この結晶中にバリウムが11.65モル%含まれていることを確認した。
育成準備の工程において、フッ化バリウム366g、及びフッ化ランタン1634gをそれぞれ秤量した以外は実施例1と同様にして結晶育成を行い、スペクトル測定用試料を作製し、9.3μmの透過率測定を行った(表1)。得られた結晶について、SEM/EDS分析を行い、この結晶中にバリウムが16.22モル%含まれていることを確認した。
育成準備の工程において、フッ化ランタン2000gのみを秤量した以外は実施例1と同様にして結晶育成を行い、スペクトル測定用試料を作製し、9.3μmの透過率測定を行った(表1)。
2:シード引き上げ棒
3:シード
4:ヒーター
5:断熱材
6:天板
7:受け台
8:高周波コイル
Claims (4)
- アルカリ土類金属が添加されており、波長9.3μmの光の内部透過率が85%/mm以上であることを特徴とするフッ化ランタン単結晶。
- 請求項1記載のフッ化ランタン単結晶からなる光学部品。
- 表面に反射防止膜を備える、請求項2記載の光学部品。
- 赤外レーザーを透過させる用途に用いられる、請求項2又は3記載の光学部品。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/556,989 US20180059288A1 (en) | 2015-03-18 | 2016-03-03 | Lanthanum fluoride single crystal and optical component |
KR1020177029181A KR20170129188A (ko) | 2015-03-18 | 2016-03-03 | 불화란탄 단결정 및 광학 부품 |
EP16764721.3A EP3272914A4 (en) | 2015-03-18 | 2016-03-03 | Lanthanum fluoride single crystal, and optical component |
CN201680014781.7A CN107429424A (zh) | 2015-03-18 | 2016-03-03 | 氟化镧单晶和光学部件 |
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US (1) | US20180059288A1 (ja) |
EP (1) | EP3272914A4 (ja) |
JP (1) | JP6591182B2 (ja) |
KR (1) | KR20170129188A (ja) |
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JPH09315894A (ja) * | 1996-03-22 | 1997-12-09 | Canon Inc | フッ化物結晶及びフッ化物結晶レンズの製造方法 |
JPH1026602A (ja) * | 1996-07-12 | 1998-01-27 | Mitsubishi Electric Corp | ガスセンサ |
US20070199816A1 (en) * | 2006-02-24 | 2007-08-30 | Zhisheng Sun | Fluoride ion selective electrode |
JP2008202977A (ja) * | 2007-02-16 | 2008-09-04 | Tokuyama Corp | 放射線検出装置及び放射線の検出方法 |
WO2012046323A1 (ja) * | 2010-10-07 | 2012-04-12 | 株式会社光学技研 | 位相子 |
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JP4785198B2 (ja) * | 2007-02-16 | 2011-10-05 | 株式会社トクヤマ | フッ化物結晶及び真空紫外発光素子 |
-
2015
- 2015-03-18 JP JP2015054837A patent/JP6591182B2/ja active Active
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2016
- 2016-03-03 KR KR1020177029181A patent/KR20170129188A/ko unknown
- 2016-03-03 CN CN201680014781.7A patent/CN107429424A/zh not_active Withdrawn
- 2016-03-03 US US15/556,989 patent/US20180059288A1/en not_active Abandoned
- 2016-03-03 WO PCT/JP2016/056640 patent/WO2016147891A1/ja active Application Filing
- 2016-03-03 EP EP16764721.3A patent/EP3272914A4/en not_active Withdrawn
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JPH09315894A (ja) * | 1996-03-22 | 1997-12-09 | Canon Inc | フッ化物結晶及びフッ化物結晶レンズの製造方法 |
JPH1026602A (ja) * | 1996-07-12 | 1998-01-27 | Mitsubishi Electric Corp | ガスセンサ |
US20070199816A1 (en) * | 2006-02-24 | 2007-08-30 | Zhisheng Sun | Fluoride ion selective electrode |
JP2008202977A (ja) * | 2007-02-16 | 2008-09-04 | Tokuyama Corp | 放射線検出装置及び放射線の検出方法 |
WO2012046323A1 (ja) * | 2010-10-07 | 2012-04-12 | 株式会社光学技研 | 位相子 |
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GLUSHKOVA T. M. ET AL.: "Refractometry of single crystals of solid solutions of La1-xSrxF3-x(0?x?0.15) with the tisonite structure.", JOURNAL OF OPTICAL TECHNOLOGY, vol. 64, no. 3, 1997, pages 195 - 197, XP009506642, ISSN: 1070-9762 * |
ROOS A.: "Crystal growth of solid solutions La1-xBaxF3-x", MATERIALS RESEARCH BULLETIN, vol. 18, no. 4, 1983, pages 405 - 409, XP024079248, ISSN: 0025-5408 * |
See also references of EP3272914A4 * |
SOROKIN N. I. ET AL.: "Superionic conductivity of the heterovalent solid solutions R1-xMxF3-x (R=REE,M=Ca,Ba) with tysonite-type structure", PHYSICS OF THE SOLID STATE, vol. 41, no. 4, 1999, pages 573 - 575, XP019309517 * |
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KR20170129188A (ko) | 2017-11-24 |
JP6591182B2 (ja) | 2019-10-16 |
EP3272914A4 (en) | 2018-10-31 |
CN107429424A (zh) | 2017-12-01 |
JP2016175780A (ja) | 2016-10-06 |
US20180059288A1 (en) | 2018-03-01 |
EP3272914A1 (en) | 2018-01-24 |
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