WO2016132890A1 - 蛍光体セラミックス、封止光半導体素子、回路基板、光半導体装置および発光装置 - Google Patents
蛍光体セラミックス、封止光半導体素子、回路基板、光半導体装置および発光装置 Download PDFInfo
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- WO2016132890A1 WO2016132890A1 PCT/JP2016/053069 JP2016053069W WO2016132890A1 WO 2016132890 A1 WO2016132890 A1 WO 2016132890A1 JP 2016053069 W JP2016053069 W JP 2016053069W WO 2016132890 A1 WO2016132890 A1 WO 2016132890A1
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- optical semiconductor
- phosphor ceramic
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Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/12—Combinations of only three kinds of elements
- F21V13/14—Combinations of only three kinds of elements the elements being filters or photoluminescent elements, reflectors and refractors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a phosphor ceramic, and a sealed optical semiconductor element, a circuit board, an optical semiconductor device, and a light emitting device including the phosphor ceramic.
- a light emitting device such as an optical semiconductor device generally includes, for example, an LED (light emitting diode element) or LD (laser diode) that emits blue light, and a phosphor that can convert blue light into yellow light and is provided on the LED. With layers.
- the light emitting device emits white light by mixing color of blue light emitted from the LED and transmitted through the phosphor layer and yellow light obtained by wavelength-converting part of the blue light in the phosphor layer.
- a conversion element made of a ceramic material is known as such a phosphor layer (see, for example, Patent Document 1).
- Patent Document 1 discloses a conversion element having a density of 97% or more of the theoretical solid state density of the ceramic material, and the pores in the conversion element having a diameter substantially between 250 nm and 2900 nm. ing.
- Patent Document 1 has improved transparency in a wide viewing angle by having nano-order minute holes.
- An object of the present invention is a phosphor ceramic that has good transparency and scattering properties, excellent productivity, and can reduce speckle noise, and a sealed optical semiconductor element, circuit board, and optical semiconductor including the phosphor ceramic It is to provide a device and a light emitting device.
- the present invention is a phosphor ceramic having pores having a pore diameter of 3.0 ⁇ m or more and 12.0 ⁇ m or less, and the volume ratio of the pores in the phosphor ceramic is 1.5 vol% or more. It contains phosphor ceramic that is 9.5% by volume or less.
- the phosphor ceramic has a plate shape and has the following formula: V ⁇ 1.30 ⁇ ( ⁇ log T) (V represents the volume ratio (%) of pores having a pore diameter of less than 3.0 ⁇ m, and T represents the thickness (mm) of the phosphor ceramic.)
- V represents the volume ratio (%) of pores having a pore diameter of less than 3.0 ⁇ m
- T represents the thickness (mm) of the phosphor ceramic.
- the present invention [3] includes the phosphor ceramic according to [1] or [2] that satisfies at least one of the following requirements (1) to (3).
- the present invention [4] includes the phosphor ceramic according to any one of [1] to [3], wherein the phosphor ceramic has an average pore size of 3.0 ⁇ m or more and 10.0 ⁇ m or less.
- the present invention [5] includes a substrate, an optical semiconductor element mounted on the substrate, an adhesive layer, and a surface of the adhesive layer opposite to the optical semiconductor element, and is disposed opposite to the optical semiconductor element.
- An optical semiconductor device comprising the phosphor ceramic according to any one of [1] to [4].
- the present invention [6] includes a substrate, an optical semiconductor element mounted on the substrate, a sealing layer for sealing the optical semiconductor element, and a surface of the sealing layer opposite to the optical semiconductor element.
- An optical semiconductor device including the phosphor ceramic according to any one of [1] to [4], disposed and opposed to the optical semiconductor element.
- the present invention [7] is an optical semiconductor element, a sealing layer that seals the optical semiconductor element, and a surface of the sealing layer that is opposite to the optical semiconductor element, facing the optical semiconductor element.
- An encapsulating optical semiconductor element including the phosphor ceramic according to any one of [1] to [4] is included.
- the present invention [8] provides the phosphor ceramic according to any one of [1] to [4] for mounting the optical semiconductor element on one side in the thickness direction, and one side in the thickness direction of the phosphor ceramic.
- a circuit board is provided that is stacked and includes electrode wiring for electrically connecting to the optical semiconductor element.
- the present invention [9] includes a light source that irradiates light on one side, a reflecting mirror that is disposed opposite to the light source at a distance from the light source, and has a through-hole through which the light passes, and the light
- the light emitting device includes the phosphor ceramic according to any one of [1] to [4], which is disposed opposite to the reflecting mirror on one side so as to be irradiated.
- the phosphor ceramic of the present invention has good transparency and scattering properties, and can reduce speckle noise. Moreover, it is excellent in productivity.
- the encapsulated optical semiconductor element, circuit board, optical semiconductor device and light emitting device of the present invention comprising the phosphor ceramic of the present invention can suppress a decrease in light emission efficiency and have a good viewing angle.
- speckle noise can be reduced in the case of a sealed optical semiconductor element or device using an LD or the like as a light source as an optical semiconductor element.
- the manufacturing cost can be reduced.
- FIG. 1A and 1B are process diagrams showing a process for manufacturing the first embodiment of the phosphor ceramic of the present invention.
- FIG. 1A shows a green sheet manufacturing process
- FIG. 1B shows a firing process.
- 2A to 2C are process diagrams showing a process for manufacturing the first embodiment of the optical semiconductor device using the phosphor ceramic shown in FIG. 1B.
- FIG. 2A is a process for producing a fluorescent adhesive sheet
- FIG. 2C shows the adhesion process.
- 3A to 3C are process diagrams showing a process for manufacturing the second embodiment of the optical semiconductor device of the present invention using the phosphor ceramic shown in FIG. 1B
- FIG. FIG. 3B shows a sealing sheet arranging step
- FIG. 3C shows a sealing step.
- 4A to 4E show a process of manufacturing a first modification (embodiment for producing a sealed optical semiconductor element) of the second embodiment of the optical semiconductor device of the present invention using the phosphor ceramic shown in FIG. 1B.
- 4A is a sealing sheet manufacturing process
- FIG. 4B is a sealing sheet arrangement process
- FIG. 4C is a sealing process
- FIG. 4D is a peeling process
- FIG. 4E is a mounting process.
- FIG. 5 shows a second modification (embodiment in which the optical semiconductor device includes a housing) of the second embodiment of the optical semiconductor device.
- 6A to 6C are process diagrams showing a process of manufacturing the third embodiment of the optical semiconductor device using the phosphor ceramic shown in FIG.
- FIG. 6A is a circuit board manufacturing process
- FIG. 6B is a circuit diagram.
- the substrate placement process, FIG. 6C shows the mounting process.
- FIG. 7 shows a light-emitting device including the phosphor ceramic shown in FIG. 1B.
- 8A and 8B are diagrams showing a wavelength conversion heat radiating member provided in the light emitting device shown in FIG. 7, in which FIG. 8A shows a side sectional view and FIG. 8B shows a rear view.
- FIG. 9 is a schematic diagram of a method for measuring the pores of the phosphor ceramic plate in the example.
- the vertical direction of the paper surface of FIGS. 1A and 1B is the “vertical direction” (first direction, thickness direction), the upper side of the paper surface is the upper side, and the lower side of the paper surface is the lower side.
- 1A and 1B is the “plane direction” (second direction, a direction orthogonal to the first direction), the right side of the page is the one side of the plane, and the left side of FIG. 1A and FIG. 1B The direction is the other side in the plane direction. 2 to 6 and 9 also refer to the directions of FIGS. 1A and 1B.
- the vertical direction of the paper surface of FIG. 7 is the “vertical direction” (first direction, thickness direction), the upper side of the paper surface is the upper side, and the lower side of the paper surface is the lower side.
- the left-right direction in FIG. 7 is the “front-rear direction” (second direction, width direction, direction orthogonal to the first direction), the right direction on the paper is the front side, and the left direction on the paper in FIG. 1 is the rear side.
- the paper thickness direction in FIG. 7 is the “left-right direction” (the direction orthogonal to the third direction, the first direction, and the second direction), the paper thickness front in FIG. 7 is the left side, and the paper thickness back side in FIG. On the right. 8A and 8B also refer to the direction of FIG.
- Phosphor Ceramics With reference to FIG. 1B, a phosphor ceramic plate 1 according to an embodiment of the phosphor ceramic of the present invention will be described.
- the phosphor ceramic plate 1 is formed in a plate shape from a ceramic (fired body) of phosphor material and contains a phosphor.
- the phosphor contained in the phosphor ceramic plate 1 has a wavelength conversion function, for example, a yellow phosphor capable of converting blue light into yellow light, and can convert blue light into red light. Examples include red phosphors.
- yellow phosphors include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), such as (Y, Gd, Ba, Ca) 3 (Al, Si, Ge, B, P, Ga) 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium) Aluminum garnet): Garnet-type phosphors having a garnet-type crystal structure such as Ce), for example, oxynitride phosphors such as Ca- ⁇ -SiAlON.
- red phosphor include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
- the phosphor ceramic plate 1 has pores inside.
- the phosphor ceramic plate 1 has holes (hereinafter also referred to as “hollow holes”) having a hole diameter of 3.0 ⁇ m or more and 12.0 ⁇ m or less.
- the lower limit of the volume ratio of the hollow holes in the phosphor ceramic plate 1 is 1.5% by volume or more, preferably 2.0% by volume or more, and more preferably 2.5% by volume or more. Moreover, an upper limit is 9.5 volume% or less, Preferably, it is 8.0 volume% or less.
- the transparency and scattering of the phosphor ceramic plate 1 can be improved.
- the hole diameter is the maximum length of the holes, and the cut surface of the phosphor ceramic plate 1 is measured using a laser microscope (device name: Lasertec, VL2000D, objective lens 20 times, magnification 1800 times). It is measured by observing.
- the volume of the hole is calculated by converting the hole diameter of the hole (maximum length of the hole) into a true sphere as the diameter of the hole.
- the phosphor ceramic plate 1 has holes having a hole diameter exceeding 12.0 ⁇ m (hereinafter also referred to as “large holes”) and holes having a hole diameter of less than 3.0 ⁇ m ( Hereinafter, it may also be referred to as a “small hole”.
- the volume ratio of the large pores in the phosphor ceramic plate 1 is, for example, 12.0% by volume or less, preferably 9.0% by volume or less, more preferably 5.0% by volume or less, and still more preferably 2. 0% by volume or less.
- the upper limit of the hole diameter of the large hole is, for example, 30.0 ⁇ m or less.
- the volume ratio of the small holes in the phosphor ceramic plate 1 is, for example, 2.0% by volume or less, preferably 1.2% by volume or less, more preferably 1.0% by volume or less, and still more preferably 0%. .8% by volume or less.
- the minimum of the hole diameter of a small hole is 0.3 micrometer or more, for example.
- the average pore diameter of the pores is, for example, 2.5 ⁇ m or more, preferably 3.0 ⁇ m or more, and for example, 20.0 ⁇ m or less, preferably 15.0 ⁇ m or less, more preferably 10.0 ⁇ m or less, More preferably, it is 5.5 ⁇ m or less.
- the average pore diameter of the pores is in the above range, the transparency and the scattering property of the phosphor ceramic plate 1 are good. Further, from the viewpoint of reducing speckle noise (speckle contrast ratio), it is preferably 10.0 ⁇ m or less.
- the manufacturing method of the phosphor ceramic plate 1 includes, for example, a green sheet manufacturing process (see FIG. 1A) and a firing process (FIG. 1B). Hereinafter, each process is explained in full detail.
- a phosphor composition containing a phosphor material and organic particles is baked.
- the slurry (phosphor composition slurry) containing a phosphor composition is apply
- the phosphor composition slurry contains a phosphor composition containing a phosphor material and organic particles, and a solvent. That is, the phosphor composition slurry contains a phosphor material, organic particles, and a solvent.
- the phosphor material is a raw material that constitutes the phosphor, and is appropriately selected according to the phosphor.
- the phosphor material include a single metal constituting the phosphor, a metal oxide thereof, and a metal nitride.
- examples of the phosphor material include yttrium-containing compounds such as yttrium oxide, aluminum-containing compounds such as aluminum oxide, and cerium oxide. Examples include metal oxides such as cerium-containing compounds.
- the phosphor material is formed, for example, in the form of particles.
- the purity of the phosphor material is, for example, 99.0% by mass or more, and preferably 99.9% by mass or more. Thereby, impurities contained in the phosphor ceramic plate 1 can be reduced.
- Organic particles are contained in the phosphor composition slurry in order to form predetermined pores in the phosphor ceramic plate 1.
- the material of the organic particles may be any material that can be completely pyrolyzed during the firing process, and examples thereof include thermoplastic resins and thermosetting resins.
- thermoplastic resin examples include acrylic resin, styrene resin, acrylic-styrene resin, polycarbonate resin, benzoguanamine resin, polyolefin resin, polyester resin, polyamide resin, and polyimide resin.
- an acrylic resin particularly, polymethyl methacrylate is used from the viewpoint of productivity.
- thermosetting resin examples include an epoxy resin, a silicone resin, and a urethane resin.
- the average particle diameter of the organic particles is, for example, 2.0 ⁇ m or more, preferably 3.4 ⁇ m or more, more preferably 4.0 ⁇ m or more, and for example, 25.0 ⁇ m or less, preferably 15.0 ⁇ m or less. More preferably, it is 8.0 ⁇ m or less. If the average particle size of the organic particles is below the lower limit, when the green sheet 15 is fired and the phosphor ceramic plate 1 is manufactured, the crystals of the phosphor ceramic plate 1 grow excessively toward the inside of the pores, There is a risk of vacancies disappearing.
- the average particle diameter of the organic particles exceeds the above upper limit, a large amount of large pores are formed inside the phosphor ceramic plate 1, and the permeability and strength of the phosphor ceramic plate 1 may be reduced. Moreover, there exists a possibility that the impurity contained in the fluorescent substance ceramic plate 1 may increase.
- the average particle diameter of the organic particles can be measured by a laser diffraction scattering method using, for example, a particle size distribution measuring device (“LS13 320” manufactured by Beckman Coulter, Inc.).
- the content ratio of the organic particles is, for example, 1.5% by volume or more, preferably 2.0% by volume or more, and, for example, 12.0% by volume with respect to the total content of the phosphor material and the organic particles. % Or less, preferably 10.0% by volume or less, and more preferably 8.0% by volume or less.
- the volume ratio of pores formed in the phosphor ceramic plate 1 can be adjusted to an appropriate range by setting the content ratio of the organic particles within the above range.
- the phosphor composition may further contain a binder resin as necessary.
- a known binder resin used for producing the green sheet 15 may be used, and examples thereof include an acrylic polymer, a butyral polymer, a vinyl polymer, and a urethane polymer.
- an acrylic polymer is used.
- the content ratio of the binder resin is, for example, 5 parts by volume or more, preferably 15 parts by volume or more, and, for example, 120 parts by volume or less, preferably 80 parts by volume or less with respect to 100 parts by volume of the phosphor material. More preferably, it is 60 parts by volume or less.
- the phosphor composition may further contain known additives such as a dispersant, a plasticizer, and a sintering aid as necessary.
- Examples of the solvent contained in the phosphor composition slurry include water and organic solvents such as acetone, methyl ethyl ketone, methanol, ethanol, toluene, methyl propionate, and methyl cellosolve.
- the content ratio of the solvent is, for example, 1 to 30% by mass in the phosphor composition slurry.
- the phosphor composition slurry is prepared by blending the above components in the above proportions and wet-mixing with a ball mill or the like. That is, a phosphor composition slurry is prepared.
- the above components may be wet mixed together.
- the phosphor composition slurry may be prepared by wet-mixing components excluding organic particles to prepare a first slurry, and then wet-mixing the organic particles into the first slurry.
- the release substrate 14 examples include a polyester film such as a polyethylene terephthalate (PET) film, a polycarbonate film such as a polyolefin film such as a polyethylene film and a polypropylene film, such as a polystyrene film, such as an acrylic film, such as silicone, and the like.
- the resin film include resin films and fluororesin films.
- metal foils, such as copper foil and stainless steel foil, are also mentioned, for example.
- a resin film is preferable, and a polyester film is more preferable.
- the surface of the peeling substrate 14 is subjected to a peeling treatment as necessary in order to improve the peelability.
- the thickness of the peeling substrate 14 is, for example, 10 to 200 ⁇ m from the viewpoint of handling and cost.
- Examples of the method for applying the phosphor composition slurry to the release substrate 14 include known application methods such as doctor blade coating, gravure coating, fountain coating, cast coating, spin coating, and roll coating.
- the drying temperature is, for example, 20 ° C. or higher, preferably 50 ° C. or higher, and for example, 200 ° C. or lower, preferably 150 ° C. or lower.
- the drying time is, for example, 1 minute or more, preferably 2 minutes or more, and for example, 24 hours or less, preferably 5 hours or less.
- the green sheet 15 obtained in this way is a ceramic before sintering of the phosphor ceramic plate 1 and is formed in a plate shape.
- the peeling substrate 14 is peeled from the green sheet 15 as shown by the phantom line in FIG. 1A.
- the green sheet 15 can also be formed by laminating a plurality (multiple layers) of green sheets 15 by thermal lamination.
- the thickness of the green sheet 15 is, for example, 10 ⁇ m or more, preferably 30 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 200 ⁇ m or less.
- the green sheet 15 is fired as shown in FIG. 1B. Thereby, the phosphor ceramic plate 1 is obtained.
- Calcination temperature is, for example, 1300 ° C. or higher, preferably 1500 ° C. or higher, and for example, 2000 ° C. or lower, preferably 1800 ° C. or lower.
- Calcination time is, for example, 1 hour or more, preferably 2 hours or more, and for example, 24 hours or less, preferably 8 hours or less.
- Calcination may be performed under normal pressure, or may be performed under reduced pressure or under vacuum.
- the rate of temperature increase in the firing is, for example, 0.5 to 20 ° C./min.
- preheating is performed in the air at, for example, 600 to 1300 ° C. using an electric furnace to remove the binder. Processing may be performed.
- the organic particles are baked through baking (when baking is performed, baking and binder processing), and pores are formed in the phosphor ceramic plate 1.
- the phosphor ceramic plate 1 obtained in this way is formed in a plate shape.
- the thickness T of the phosphor ceramic plate 1 is, for example, 10 ⁇ m or more, preferably 30 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 130 ⁇ m or less.
- the phosphor ceramic plate 1 preferably satisfies the following formula.
- V ⁇ 1.30 ⁇ ( ⁇ log T)
- V indicates the volume ratio (%) of pores (small pores) having a pore diameter of less than 3.0 ⁇ m.
- T represents the thickness (mm) of the phosphor ceramic plate 1.
- the phosphor ceramic plate 1 preferably satisfies at least one of the following requirements (1) to (3).
- the sodium element is 67 ppm or less, preferably 50 ppm or less.
- Magnesium element is 23 ppm or less, preferably 20 ppm or less.
- the iron element is 21 ppm or less, preferably 15 ppm or less, more preferably 10 ppm or less.
- the above elements can be measured by, for example, ICP-MS analysis.
- the element is an impurity, and the quantum efficiency is excellent by setting the impurity to the upper limit or less.
- the phosphor ceramic plate 1 has pores having a pore diameter of 3.0 ⁇ m or more and 12.0 ⁇ m or less, and the volume ratio of the pores in the phosphor ceramic plate 1 is 1.5 vol% or more and 9 vol%. .5% by volume or less. Therefore, the light incident from the optical semiconductor element into the phosphor ceramic plate 1 can be scattered while being satisfactorily transmitted. Therefore, it has excellent transparency and scattering properties.
- speckle noise can be reduced particularly for light obtained by wavelength-converting light from the LD using the ceramic plate 1.
- the phosphor ceramic plate 1 has a predetermined amount of relatively large holes (hollow holes). Therefore, when manufacturing the phosphor ceramic plate 1 (green sheet firing), it is not necessary to form minute holes that are difficult to form. Therefore, it is excellent in productivity.
- the phosphor ceramic plate 1 is formed of a phosphor ceramic, it has excellent heat resistance and heat dissipation.
- Such a phosphor ceramic plate 1 is an object of commercial transaction as a part of the optical semiconductor device 8 alone.
- optical semiconductor device 8 including the phosphor ceramic plate 1 will be described below.
- the manufacturing method of the first embodiment of the optical semiconductor device 8 includes, for example, a fluorescent adhesive sheet manufacturing step (see FIG. 2A), a fluorescent adhesive sheet arranging step (see FIG. 2B), and an adhesive step (see FIG. 2C).
- the adhesive layer 2 is laminated on the phosphor ceramic plate 1.
- the adhesive layer 2 is disposed on the entire upper surface (one surface) of the phosphor ceramic plate 1 and is formed into a sheet shape from the adhesive composition.
- an adhesive composition for example, pressure sensitive adhesive compositions such as silicone and acrylic, for example, thermosetting adhesive compositions such as silicone and epoxy, such as glass and ceramic And an inorganic adhesive composition.
- a silicone type composition is mentioned from a viewpoint of mass productivity, durability, and heat resistance.
- the thickness of the adhesive layer 2 is, for example, 5 ⁇ m or more and 200 ⁇ m or less from the viewpoint of pressure-sensitive adhesiveness, preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less from the viewpoint of thermal conductivity.
- the adhesive composition is prepared as a varnish
- the varnish is applied to the entire upper surface of the phosphor ceramic plate 1, such as a bar coater.
- Application is performed by a known application method. Thereby, a film of the adhesive composition is formed. Subsequently, if necessary, the solvent is distilled off.
- a film can be formed by applying varnish to the surface of a release sheet or the like, and the film can be transferred from the release sheet to the phosphor ceramic plate 1 after the solvent is distilled off if necessary.
- the fluorescent adhesive sheet 6 includes the phosphor ceramic plate 1 and the adhesive layer 2, does not include the optical semiconductor element 5, and is an object of commercial transaction as a component of the optical semiconductor device 8.
- the substrate 7 on which the optical semiconductor element 5 is mounted and the fluorescent adhesive sheet 6 are arranged to face each other. That is, the substrate 7 and the fluorescent adhesive sheet 6 are arranged to face each other with an interval so that the optical semiconductor element 5 and the adhesive layer 2 face each other.
- the substrate 7 is formed in a plate shape larger than the optical semiconductor element 5 in plan view.
- the substrate 7 is made of an insulating substrate such as a silicon substrate, a ceramic substrate, a polyimide resin substrate, or a laminated substrate in which an insulating layer is laminated on a metal substrate.
- a conductor pattern (not shown) including electrodes is formed on the upper surface of the substrate 7.
- the optical semiconductor element 5 is, for example, an element that emits blue light (specifically, a blue LED or a blue LD) and is, for example, flip-chip mounted or wire bonded to an electrode (not shown) of the substrate 7. Connected by connection.
- the fluorescent adhesive sheet 6 bonded to the optical semiconductor element 5 is formed in a shape that avoids (bypasses) the wire.
- the fluorescent adhesive sheet 6 is attached to the optical semiconductor element 5.
- the phosphor ceramic plate 1 is bonded onto the optical semiconductor element 5 via the adhesive layer 2.
- the lamination of the fluorescent adhesive sheet 6 and the optical semiconductor element 5 is performed at room temperature (specifically, 20 to 25 ° C.). If necessary, the fluorescent adhesive sheet 6 can be heated to 30 to 150 ° C., for example.
- the optical semiconductor device 8 to which the phosphor ceramic plate 1 is bonded through the bonding layer 2 is obtained.
- the optical semiconductor device 8 includes the substrate 7, the optical semiconductor element 5 mounted on the substrate 7, the adhesive layer 2 formed on the optical semiconductor element 5, and the adhesive layer 2 (the optical semiconductor element 5 and the optical semiconductor element 5). Is disposed on the opposite side), and includes a phosphor ceramic plate 1 disposed opposite to the optical semiconductor element 5.
- the optical semiconductor device 8 is obtained as a white light emitting device.
- the sealing layer 3 can be provided on the optical semiconductor device 8 as indicated by a virtual line in FIG. 2C.
- the sealing layer 3 is disposed on the substrate 7 so as to cover the optical semiconductor element 5 and the fluorescent adhesive sheet 6.
- Sealing layer 3 is formed from a sealing resin composition.
- the sealing resin composition includes a known transparent resin used for embedding and sealing the optical semiconductor element 5, and examples of the transparent resin include thermosetting resins such as silicone resins, epoxy resins, and urethane resins, Examples thereof include thermoplastic resins such as acrylic resin, styrene resin, polycarbonate resin, and polyolefin resin.
- a method of providing the sealing layer 3 in the optical semiconductor device 8 for example, a method of directly forming the sealing layer 3 on the optical semiconductor device 8, or after forming the sealing layer 3 on another release sheet or the like, the sealing is performed. Examples include a method of transferring the layer 3 from the release sheet to the optical semiconductor device 8 by a laminator, thermocompression bonding, or the like.
- the optical semiconductor device 8 of 1st Embodiment is equipped with the fluorescent substance ceramic plate 1, it can improve the permeability
- FIG. Therefore, a decrease in luminous efficiency can be suppressed, and the viewing angle becomes good.
- an LD is used as the optical semiconductor element 5
- speckle noise of light emitted from the optical semiconductor device 8 can be reduced.
- the optical semiconductor device 8 has good productivity, the manufacturing cost can be reduced.
- the optical semiconductor device 8 is excellent in heat resistance and heat dissipation.
- the manufacturing method of 2nd Embodiment of the optical semiconductor device 8 is equipped with the sealing sheet preparation process (refer FIG. 3A), the sealing sheet arrangement
- FIG. 3A the sealing sheet preparation process
- FIG. 3B the sealing sheet arrangement
- FIG. 3C a sealing process
- the sealing layer 3 is laminated on the phosphor ceramic plate 1 as shown in FIG. 3A.
- the sealing layer 3 is disposed on the entire upper surface (one surface) of the phosphor ceramic plate 1 and is formed into a sheet shape from the above-described sealing resin composition.
- a method of laminating the sealing layer 3 on the upper surface of the phosphor ceramic plate for example, a method of directly forming the sealing layer 3 on the phosphor ceramic plate 1, or after forming the sealing layer 3 on another release sheet or the like And a method of transferring the sealing layer 3 from the release sheet to the phosphor ceramic plate 1 by a laminator, thermocompression bonding, or the like.
- the sealing layer 3 is heated to bring the sealing layer 3 made of the sealing resin composition into a B-stage state (semi-cured state).
- the temperature is, for example, 50 ° C. or higher, preferably 80 ° C. or higher, and for example, 150 ° C. or lower, preferably 140 ° C. or lower.
- the heating time is, for example, 1 minute or more, preferably 5 minutes or more, and for example, 100 minutes or less, preferably 15 minutes or less. Note that whether or not the sealing layer 3 is in the B-stage state can be appropriately set according to the type of the thermosetting resin.
- the wavelength conversion sealing sheet 4 includes the phosphor ceramic plate 1 and the encapsulating layer 3, does not include the optical semiconductor element 5, and is an object of commercial transaction as a component of the optical semiconductor device 8 alone.
- the substrate 7 on which the optical semiconductor element 5 is mounted and the wavelength conversion sealing sheet 4 are arranged to face each other. That is, the substrate 7 and the wavelength conversion sealing sheet 4 are arranged to face each other with an interval so that the optical semiconductor element 5 and the sealing layer 3 face each other.
- the optical semiconductor element 5 is connected to an electrode (not shown) of the substrate 7 by wire bonding.
- a terminal (not shown) provided on the upper surface of the optical semiconductor element 5 and an electrode (not shown) provided on the upper surface of the substrate 7 are electrically connected via a wire 16 (see a virtual line). Connected to.
- the optical semiconductor element 5 may be flip-chip mounted on the substrate 7 (see solid line).
- the optical semiconductor element 5 is embedded by the sealing layer 3 of the wavelength conversion sealing sheet 4.
- the optical semiconductor element 5 and the wire 16 are embedded.
- the sealing layer 3 is thermocompression bonded to the substrate 7.
- the wavelength conversion encapsulating sheet 4 and the substrate 7 are pressed flat.
- the temperature is, for example, 80 to 220 ° C.
- the pressure is, for example, 0.01 to 1 MPa
- the press time is, for example, 1 to 10 minutes.
- the upper surface and side surfaces of the optical semiconductor element 5 and the wire are covered with the sealing layer 3 by this thermocompression bonding. That is, the optical semiconductor element 5 and the wire are embedded in the sealing layer 3.
- the upper surface of the substrate 7 exposed from the optical semiconductor element 5 is covered with the sealing layer 3, and the wavelength conversion sealing sheet 4 is bonded to the optical semiconductor element 5 and the substrate 7.
- the sealing layer 3 is in a C stage state (fully cured state).
- the optical semiconductor device 8 includes the substrate 7, the optical semiconductor element 5 mounted on the substrate 7, the sealing layer 3 formed on the substrate 7 and sealing the optical semiconductor element 5, and the sealing layer 3. And a phosphor ceramic plate 1 disposed opposite to the optical semiconductor element 5.
- the optical semiconductor device 8 of the second embodiment can also exhibit the same operational effects as the first embodiment.
- the optical semiconductor element 5 mounted on the substrate 7 is encapsulated by the wavelength conversion encapsulating sheet 4, so that the light
- the semiconductor device 8 is directly manufactured, for example, as shown in FIG. 4C, the optical semiconductor element 5 that is not yet mounted on the substrate 7 and is supported by the support sheet 9 is sealed, and the sealed optical semiconductor element
- the optical semiconductor device 8 can also be manufactured after the 12 is manufactured.
- the manufacturing method of the optical semiconductor device 8 includes, for example, a sealing sheet manufacturing process (see FIG. 4A), a sealing sheet arranging process (see FIG. 4B), a sealing process (see FIG. 4C), and a peeling process. (See FIG. 4D) and a mounting process (see FIG. 4E).
- a sealing sheet manufacturing process see FIG. 4A
- a sealing sheet arranging process see FIG. 4B
- a sealing process see FIG. 4C
- a peeling process See FIG. 4D
- a mounting process see FIG. 4E.
- the sealing sheet preparation process is the same as the sealing sheet preparation process described above with reference to FIG. 3A, as shown in FIG. 4A.
- the supporting sheet 9 and the optical semiconductor element 5 supported by the supporting sheet 9 and the wavelength conversion sealing sheet 4 are arranged to face each other. That is, the support sheet 9 and the wavelength conversion sealing sheet 4 are arranged to face each other with an interval so that the optical semiconductor element 5 and the sealing layer 3 face each other.
- the support sheet 9 includes a support plate 10 and an adhesive layer 11 laminated on the upper surface of the support plate 10.
- the support plate 10 has a plate shape extending in the surface direction, is provided at a lower portion of the support sheet 9, and is formed in substantially the same shape as the support sheet 9 in plan view.
- the support plate 10 is made of a hard material that cannot be stretched in the plane direction. Specifically, as such a material, for example, an oxide such as silicon oxide (quartz or the like), sapphire, or alumina, for example, stainless steel or the like is used. A metal such as silicon can be used.
- the thickness of the support plate 10 is, for example, 0.1 to 2 mm.
- the adhesive layer 11 is formed on the entire upper surface of the support plate 10.
- the pressure-sensitive adhesive material that forms the pressure-sensitive adhesive layer 11 include pressure-sensitive adhesives such as acrylic pressure-sensitive adhesives and silicone-based pressure sensitive adhesives.
- the adhesive layer 11 may be formed by, for example, an active energy ray irradiation release sheet whose adhesive strength is reduced by irradiation with an active energy ray (specifically, an active energy ray irradiation release sheet described in JP 2005-286003 A or the like). ) Or the like.
- the thickness of the adhesive layer 11 is, for example, 0.1 to 1 mm.
- the support plate 10 and the adhesive layer 11 are bonded together.
- the support plate 10 is prepared, and then a varnish prepared from the above-mentioned adhesive material and a solvent blended as necessary is applied to the support plate 10, and then, if necessary, by a coating method of drying the solvent.
- the adhesive layer 11 can also be directly laminated on the support plate 10.
- the thickness of the support sheet 9 is, for example, 0.2 to 6 mm.
- the optical semiconductor element 5 is laminated on the support sheet 9. Specifically, the lower surface of the optical semiconductor element 5 is brought into contact with the upper surface of the adhesive layer 11.
- the optical semiconductor element 5 is arranged (placed) on the support sheet 9. That is, the optical semiconductor element 5 is supported on the support sheet 9.
- the sealing process is the same as the sealing process described above with reference to FIG. 3C, as shown in FIG. 4C.
- the sealed optical semiconductor element 12 is peeled from the upper surface of the adhesive layer 11 as shown by the arrow in FIG. 4D. Specifically, when the adhesive layer 11 is an active energy ray irradiation release sheet, the active energy ray is irradiated to the adhesive layer 11.
- the optical semiconductor element 5, the sealing layer 3 that seals the optical semiconductor element 5, and the phosphor ceramic plate 1 that is disposed on the sealing layer 3 and is disposed to face the optical semiconductor element 5 are provided.
- a sealed optical semiconductor element 12 is obtained.
- the sealed optical semiconductor element 12 includes the optical semiconductor element 5, the sealing layer 3, and the phosphor ceramic plate 1.
- the sealed optical semiconductor element 12 does not include the substrate 7 and is an object of commercial transaction as a part of the optical semiconductor device 8.
- the sealed optical semiconductor element 12 includes the phosphor ceramic plate 1, it is possible to improve the transmission and scattering properties of the light emitted from the optical semiconductor element 5. Therefore, a decrease in luminous efficiency can be suppressed, and the viewing angle becomes good. Further, when an LD is used as the optical semiconductor element 5, speckle noise of light irradiated from the sealed optical semiconductor element 12 can be reduced. Moreover, since the sealing optical semiconductor element 12 has good productivity, the manufacturing cost can be reduced. Furthermore, the sealed optical semiconductor element 12 is excellent in heat resistance and heat dissipation.
- the sealed optical semiconductor element 12 is then mounted on the substrate 7 as shown in FIG. 4E. Specifically, a terminal (not shown) provided on the lower surface of the optical semiconductor element 5 and an electrode (not shown) of the substrate 7 are connected, and the sealed optical semiconductor element 12 is flip-chip mounted on the substrate 7. .
- the optical semiconductor device 8 including the substrate 7, the optical semiconductor element 5, the sealing layer 3, and the phosphor ceramic plate 1 is manufactured.
- the optical semiconductor device 8 of the first modified example can also exhibit the same effects as described above.
- the optical semiconductor device 8 includes a housing disposed on the substrate 7 so as to surround the optical semiconductor element 5.
- the optical semiconductor device 8 may include a housing 13.
- the optical semiconductor device 8 of the second modification example in FIG. 5 seals the substrate 7, the optical semiconductor element 5 mounted on the substrate 7, the housing 13 formed on the substrate 7, and the optical semiconductor element 5.
- a sealing layer 3 and a phosphor ceramic plate 1 formed on the sealing layer 3 are provided.
- the housing 13 has a substantially frame shape in a plan view, and is formed in a substantially trapezoidal cylindrical shape that becomes gradually narrower upward. Further, the housing 13 is disposed so as to surround the optical semiconductor element 5 and spaced from the optical semiconductor element 5.
- the sealing layer 3 is filled in the housing 13.
- the phosphor ceramic plate 1 is also disposed on the entire upper surface of the sealing layer 3 and the inner end of the upper surface of the housing 13.
- the optical semiconductor device 8 shown in the second modification can also exhibit the same effects as described above.
- the manufacturing method of the third embodiment of the optical semiconductor device 8 includes, for example, a circuit board manufacturing process (see FIG. 6A), a circuit board arrangement process (see FIG. 6B), and a mounting process (see FIG. 6C).
- a circuit board manufacturing process see FIG. 6A
- a circuit board arrangement process see FIG. 6B
- a mounting process see FIG. 6C
- the electrode wiring 41 is laminated on the phosphor ceramic plate 1.
- the electrode wiring 41 is formed as a conductor pattern integrally including an electrode 42 for electrical connection with the terminal 44 of the optical semiconductor element 5 and a wiring 43 continuous therewith.
- the electrode wiring 41 is made of a conductor such as gold, copper, silver, or nickel.
- Two (one pair) of electrodes 42 are provided for one optical semiconductor element 5 (see FIG. 6B). Specifically, corresponding to two terminals 44 formed in one optical semiconductor element 5. Is provided.
- a protective film (not shown) can be formed on the surface (upper surface and side surface) of the electrode wiring 41.
- the protective film is formed as a plating layer made of, for example, Ni and / or Au from the viewpoint of oxidation prevention or connectivity.
- the dimensions of the electrode wiring 41 are set as appropriate.
- the maximum length of the electrode 42 is, for example, 0.03 mm or more, preferably 0.05 mm or more, and, for example, 50 mm or less, Preferably, it is 5 mm or less.
- interval between the adjacent electrodes 42 is 0.05 mm or more, for example, Preferably, it is 0.1 mm or more, for example, is 3 mm or less, Preferably, it is 1 mm or less.
- the width of the wiring 43 is, for example, 20 ⁇ m or more, preferably 30 ⁇ m or more, and for example, 400 ⁇ m or less, preferably 200 ⁇ m or less.
- the thickness of the electrode wiring 41 is, for example, 10 ⁇ m or more, preferably 25 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 100 ⁇ m or less.
- the thickness of the protective film (not shown) is, for example, 100 nm or more, preferably 300 nm or more, and, for example, 5 ⁇ m or less, preferably 1 ⁇ m or less.
- the electrode wiring 41 is laminated on the upper surface (one surface) of the phosphor ceramic plate 1.
- Examples of the method of laminating the electrode wiring 41 on the upper surface of the phosphor ceramic plate 1 include a heat bonding method, a printing-heat bonding method, a Mo-Mn method, a copper sulfide method, a copper metallization method, a printing method, a transfer method, and the like.
- a heat bonding method and a printing-heat bonding method are mentioned.
- a conductor sheet for forming the electrode wiring 41 is brought into contact with the entire upper surface of the phosphor ceramic plate 1 and then, for example, 800 to 1200 in an inert atmosphere of Ar, N 2 or the like. Heating is performed at a temperature of ° C. to form a bonded substrate composed of the phosphor ceramic plate 1 and the conductor sheet. Thereafter, the electrode wiring 41 is formed by etching the conductor sheet.
- a paste prepared by mixing a conductive powder, a binder such as an organic compound, and a solvent is printed on the upper surface of the phosphor ceramic plate 1 in the above pattern to form a printed pattern.
- the conductor sheet is disposed by a dispenser along the printed pattern, and bonded by heating at the above-described temperature in an inert atmosphere or vacuum. Thereafter, a conductor pattern is formed on the conductor sheet by etching or the like.
- the circuit board 40 includes the phosphor ceramic plate 1 for mounting the optical semiconductor element 5 thereon and the electrode wiring 41 stacked thereon and electrically connected to the optical semiconductor element 5 is obtained.
- the circuit board 40 includes the phosphor ceramic plate 1 and the electrode wiring 41, does not include the optical semiconductor element 5, and is an object of commercial transaction as a component of the optical semiconductor device 8.
- the circuit board 40 includes the phosphor ceramic plate 1, it is possible to improve the transmission and scattering properties of the light emitted from the optical semiconductor element 5. Therefore, a decrease in luminous efficiency can be suppressed, and the viewing angle becomes good. Further, when the optical semiconductor device 8 is manufactured using the LD as the optical semiconductor element 5 in particular, speckle noise of light emitted from the optical semiconductor device 8 can be reduced. Moreover, since the circuit board 40 has good productivity, the manufacturing cost can be reduced. Furthermore, the circuit board 40 is excellent in heat resistance and heat dissipation.
- the circuit board 40 includes the phosphor ceramic plate 1
- the phosphor ceramic plate 1 can convert the wavelength of light emitted downward without separately providing a phosphor layer on the lower surface of the substrate. it can. Therefore, it is possible to simplify the configuration of the optical semiconductor device 8 by reducing the number of parts in the optical semiconductor device 8 while improving the light flux below the optical semiconductor device 8. As a result, the number of manufacturing steps of the optical semiconductor device 8 can be reduced, the manufacturing method can be simplified, the productivity of the optical semiconductor device 8 can be improved, and the manufacturing cost can be reduced.
- the optical semiconductor element 5 and the circuit board 40 are arranged to face each other as shown in FIG. 6B. That is, the optical semiconductor element 5 and the circuit board 40 are arranged to face each other with an interval so that the terminal 44 provided on the lower surface of the optical semiconductor element 5 and the electrode wiring 41 provided on the upper surface of the circuit board 40 face each other.
- the optical semiconductor element 5 is then mounted on the circuit board 40 as shown in FIG. 6C. Specifically, the terminal 44 of the optical semiconductor element 5 and the electrode 42 of the circuit board 40 are connected, and the optical semiconductor element 5 is flip-chip mounted on the circuit board 40.
- the optical semiconductor device 8 includes the circuit substrate 40 and the optical semiconductor element 5 mounted on the circuit substrate 40 so as to be electrically connected to the electrode wiring 41.
- the sealing layer 3 can be provided on the optical semiconductor device 8 as indicated by a virtual line in FIG. 6C.
- the sealing layer 3 is disposed on the circuit board 40 so as to cover the optical semiconductor element 5.
- the sealing layer 3 can also be made into the fluorescent substance sealing layer formed from the sealing resin composition containing the said fluorescent substance and the said transparent resin.
- the optical semiconductor device 8 of the third embodiment can also exhibit the same operational effects as the first embodiment.
- the circuit board 40 includes the phosphor ceramic plate 1
- an optical semiconductor element is provided without separately providing a phosphor layer below the phosphor ceramic plate 1.
- the wavelength of light emitted downward from 5 can be converted by the phosphor ceramic plate 1. Therefore, it is possible to simplify the configuration of the optical semiconductor device 8 by reducing the number of components while being excellent in the lower light flux. As a result, the productivity of the optical semiconductor device 8 can be improved.
- the sealing layer 3 is a fluorescent sealing layer
- the optical semiconductor element 5 is sealed to improve reliability, and the optical semiconductor element 5 is provided by the fluorescent sealing layer.
- the wavelength of the light emitted upward and laterally from the light can be converted to improve the luminous flux of the light. Therefore, the optical semiconductor device 8 can be a double-sided light emission type that can emit light from both the upper and lower sides.
- an illumination device 20 as an example of a light emitting device including the phosphor ceramic plate 1 will be described with reference to FIGS.
- the illumination device 20 includes an illumination housing 22, a transparent member 23, a light source 24, a reflecting mirror 25, and a wavelength conversion heat radiating member 26.
- the lighting housing 22 is formed in a substantially cylindrical shape extending in the front-rear direction, closed on the rear side, and opened on the front side.
- the illumination housing 22 accommodates a transparent member 23, a light source 24, a reflecting mirror 25, and a wavelength conversion heat radiating member 26 described later.
- the transparent member 23 has a substantially circular shape in a rear view and is formed in a plate shape with a thin thickness in the front-rear direction.
- the outer shape of the transparent member 23 is formed so as to coincide with the inner peripheral edge at the front end of the illumination housing 22 when projected in the front-rear direction.
- the transparent member 23 is provided at the front end of the lighting housing 22. Specifically, the transparent member 23 is accommodated in the illumination housing 22 so that the front end edge of the illumination housing 22 is flush with the front surface (front surface) of the transparent member 23 in the vertical direction.
- Examples of the light source 24 include semiconductor light sources such as a light emitting diode (LED) and a laser diode (LD).
- the light source 24 is provided at a substantially central portion in the up-down direction and the width direction (left-right direction) inside the illumination housing 22 with a space behind the transparent member 23.
- An external wiring 28 routed from the outside of the illumination housing 22 is connected to the light source 24.
- the light source 24 emits light such as monochromatic light toward the front side by the electric power received from the external wiring 28.
- the reflecting mirror 25 is formed in a dome shape having a substantially circular shape in a rear view and a substantially semicircular arc shape in a side sectional view.
- the outer shape of the reflecting mirror 25 is formed so as to coincide with the outer edge of the transparent member 23 when projected in the front-rear direction.
- the reflecting mirror 25 is disposed on the other side (rear side) of the transparent member 23 and on one side (front side) of the light source 24 with a distance from the light source 24.
- the reflecting mirror 25 is accommodated in the illumination housing 22 so that the front end edge thereof is in contact with the rear surface of the transparent member 23.
- a through-hole 27 through which light from the light source 24 passes is formed at the center (vertical and width center) of the reflecting mirror 25.
- the reflecting mirror 25 reflects the diffused light that passes through the through hole 27 toward the front side and is diffused toward the rear side by a wavelength conversion heat radiating member 26 (described later), and reflects the light toward the front side.
- the wavelength conversion heat radiation member 26 is provided on the front side in the illumination housing 22. Specifically, it is disposed to face the front side with a gap from the reflecting mirror 25, and is disposed adjacent to the rear surface (rear surface) of the transparent member 23. As shown in FIGS. 8A and 8B, the wavelength conversion heat radiating member 26 includes a heat diffusion holding member 29 and a wavelength conversion bonding member 30.
- the heat diffusion holding member 29 is formed in a substantially rectangular shape in rear view extending in the vertical direction, and is disposed adjacent to the transparent member 23. Specifically, the heat diffusion holding member 29 is disposed so that the front surface of the heat diffusion holding member 29 is in contact with the rear surface of the transparent member 23.
- the heat diffusion holding member 29 includes a placement part 31 and a fixing part 32. *
- the mounting portion 31 is formed in a substantially rectangular shape in rear view having a thickness in the front-rear direction.
- the placement portion 31 is disposed such that the front surface of the placement portion 31 is in contact with the substantially central portion of the rear surface of the transparent member 23 in the rear view.
- the fixing portion 32 is formed integrally with the placement portion 31 so as to extend downward from the front lower end of the placement portion 31.
- the fixed portion 32 has a substantially rectangular shape in rear view extending in the vertical direction, and is formed in a plate shape whose thickness in the front-rear direction is thinner than that of the placement portion 31.
- the fixed portion 32 is bent rearward so that the upper front surface is in contact with the rear surface of the transparent member 23 and is separated from the transparent member 23 in the middle of the vertical direction.
- One end (lower end) of the fixing portion 32 passes through the reflecting mirror 25 and is fixed to the peripheral surface (inner end edge) of the illumination housing 22.
- the thermal diffusion holding member 29 is made of a material having good thermal conductivity, for example, a thermal conductive metal such as aluminum or copper, or a ceramic material such as AlN.
- the wavelength conversion bonding member 30 is provided on the rear surface of the placement portion 31.
- the wavelength conversion bonding member 30 includes a bonding layer 34 and the phosphor ceramic plate 1.
- the bonding layer 34 has a substantially rectangular shape when viewed from the back, and is formed in a plate shape.
- the bonding layer 34 is provided on the rear surface of the mounting portion 31 and the front surface (one surface) of the phosphor ceramic plate 1. That is, the bonding layer 34 is disposed between the mounting portion 31 and the phosphor ceramic plate 1.
- the bonding layer 34 overlaps with the placement portion 31 when projected in the front-rear direction, and specifically, is formed in the same shape as the placement portion 31 in the rear view.
- the bonding layer 34 preferably has light reflectivity and heat dissipation, and is formed, for example, by curing a light reflective heat dissipation curable composition.
- Examples of the light-reflective heat-dissipating curable composition include a ceramic ink, a curable resin composition containing a curable resin and inorganic particles, and an aqueous silicate solution containing alkali metal silicate and inorganic particles. .
- Ceramic ink Commercially available products can be used as the ceramic ink, and specific examples include ceramic inks (RG type, AN type, UV type, SD type) manufactured by Ein Co., Ltd.
- the curable resin contained in the curable resin composition examples include a curable silicone resin, an epoxy resin, and an acrylic resin.
- a curable silicone resin commercially available products (trade name: KER-2500, manufactured by Shin-Etsu Chemical Co., Ltd., trade name: LR-7665, manufactured by Asahi Kasei Wacker) can be used. *
- inorganic oxides such as silicon dioxide and titanium dioxide
- metals such as silver and aluminum
- titanic acid complex oxides for example, barium titanate and potassium titanate
- the average particle diameter (average maximum length) of the inorganic particles is, for example, 0.1 to 50 ⁇ m.
- the phosphor ceramic plate 1 has a substantially rectangular shape when viewed from the back, and is formed in a plate shape.
- the phosphor ceramic plate 1 is provided on the rear surface of the bonding layer 34.
- the phosphor ceramic plate 1 overlaps with the bonding layer 34 and the mounting portion 31 when projected in the front-rear direction.
- the phosphor ceramic plate 1 has the same shape as the bonding layer 34 and the mounting portion 31 in the rear view. Is formed.
- the phosphor ceramic plate 1 is arranged so as to be collinear with the light source 24 and the through hole 27. Specifically, the light source 24, the through-hole 27, and the phosphor ceramic plate 1 are accommodated in the illumination housing 22 so as to be aligned on a straight line that matches the axis of the illumination housing 22.
- the light h 0 irradiated from the light source 24 passes through the through hole 27 and is converted into white light by the phosphor ceramic plate 1. Diffused in the direction.
- the phosphor ceramic plate 1 is excellent in transmission and scattering properties, white light can be efficiently reflected in a wide range (to the rear side) (light h 1 to light in FIG. 7). h 4 ). That is, it is possible to reflect to the reflecting mirror 25 side in a wide range with high efficiency while reducing the loss of the light amount in the wavelength conversion heat radiating member 26. Therefore, the luminous efficiency emitted to the front side (and hence the outside) by the reflecting mirror 25 is good, and the viewing angle is good. In addition, speckle noise of light emitted from the illumination device 20 can be reduced.
- the lighting device 20 since the lighting device 20 has good productivity, the manufacturing cost can be reduced. Furthermore, the lighting device 20 is excellent in heat resistance and heat dissipation.
- the lighting device 20 can be suitably used for far-field illumination applications such as in-vehicle lamps, high ceiling hanging lamps, road lamps, and entertainment lamps.
- Example 1 Yttrium oxide particles (purity 99.99% by mass, lot: N—YT4CP, manufactured by Japan Yttrium Co.) 11.34 g, aluminum oxide particles (purity 99.99% by mass, product number “AKP-30”, manufactured by Sumitomo Chemical) 8 A raw material powder of a phosphor material consisting of .577 g and cerium oxide particles (purity 99.99 mass%) 0.087 g was prepared.
- organic particles polymethyl methacrylate, average particle size of 3.5 ⁇ m
- wet mixing was performed to obtain a phosphor composition slurry.
- the obtained phosphor composition slurry was tape-cast on a PET film by a doctor blade method and dried at 70 ° C. for 5 minutes to obtain a green sheet having a thickness of 90 ⁇ m. Thereafter, the green sheet was peeled from the PET film.
- the green sheet was cut into a size of 20 mm ⁇ 20 mm. Two cut green sheets were produced, and the two green sheets were thermally laminated using a biaxial hot press to produce a green sheet laminate.
- the produced green sheet laminate was heated to 1200 ° C. in the air at a heating rate of 1 ° C./min in an electric muffle furnace, and a binder removal treatment for decomposing and removing organic components such as a binder resin was performed. . Thereafter, the green sheet laminate is transferred to a high-temperature environment furnace, heated to 1750 ° C. at a rate of temperature increase of 5 ° C./min in a reducing atmosphere, and baked at that temperature for 5 hours. A phosphor ceramic plate made of Y 3 Al 5 O 12 : Ce was manufactured.
- Example 2 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), except for adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 4.0 ⁇ m) Produced a phosphor ceramic plate in the same manner as in Example 1.
- Example 3 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), except for adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 5.0 ⁇ m) Produced a phosphor ceramic plate in the same manner as in Example 1.
- Example 4 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 6.5% by volume of organic particles (polymethyl methacrylate, average particle size 6.5 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Example 5 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 12.0% by volume of organic particles (polymethyl methacrylate, average particle size 12.5 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Example 6 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 9.0% by volume of organic particles (polymethyl methacrylate, average particle size 18.0 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Example 7 A phosphor ceramic plate having a thickness (T) of 150 ⁇ m was manufactured in the same manner as in Example 1 except that the coating amount of the phosphor composition slurry was adjusted and the thickness of the green sheet was adjusted to be thick.
- Example 8 Example 2 and Example 2 except that the yttrium oxide particles (purity 99.99 mass%, lot: N-YT4CP, manufactured by Japan Yttrium Co.) were changed to yttrium oxide particles (purity 99.8 mass%, manufactured by Nanostructured & Amorphous Materials). Similarly, a phosphor ceramic plate was manufactured.
- Comparative Example 1 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 4.0% by volume of organic particles (polymethyl methacrylate, average particle size 2.5 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Comparative Example 2 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 1.5% by volume of organic particles (polymethyl methacrylate, average particle size 4.0 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Comparative Example 3 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 15.0% by volume of organic particles (polymethyl methacrylate, average particle size 4.0 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Comparative Example 4 Instead of adding 3.0% by volume of organic particles (polymethyl methacrylate, average particle size 3.5 ⁇ m), 10.0% by volume of organic particles (polymethyl methacrylate, average particle size 25.0 ⁇ m) was added. Produced a phosphor ceramic plate in the same manner as in Example 1.
- Each hole has a hole diameter of less than 3.0 ⁇ m (small hole), a hole of 3.0 ⁇ m or more and 12.0 ⁇ m or less (hollow hole), and a hole of more than 12.0 ⁇ m (large hole).
- the volume of holes was calculated in terms of a true sphere, and the total volume of the divided holes was calculated. By dividing the calculated total volume by the volume of the phosphor ceramic plate (the portion where the pores were measured, including the pores), the volume ratio (surface direction) of the pore diameter was determined.
- the phosphor ceramic plate is cut in the thickness direction, and the cut surface (thickness direction) is also observed for 15 surfaces in the same manner as described above, and the volume ratio of the pore diameter (thickness direction) in the same manner as described above. Asked.
- the average of the volume ratio of the pore diameter (plane direction) and the volume ratio of the pore diameter (thickness direction) was defined as the volume ratio of the pore diameter of the phosphor ceramic plate of the present invention.
- the results are shown in Table 1.
- Multi-layer ceramic substrate with cavity (Sumitomo Metal Electrodevices, product number “207806”, housing height 0.6mmt, housing material alumina reflectivity 75%)
- Cavity blue light emitting diode chip (Cree, product number “C450EZ1000- 0123 ”) was die-attached with Au-Sn solder, and an optical semiconductor device was prepared by wire bonding with Au wire.
- Each phosphor ceramic plate was placed on the housing of the optical semiconductor device, and the angle dependency of the package at an angle of 45 degrees with the vertical direction was evaluated.
- the results are shown in Table 1.
- a blue LD light source (manufactured by Neoarc, “TCSQ0445-1600”) is used, and as the phosphor ceramic plate 1, the phosphor ceramic plates of the respective examples and comparative examples are used, and the LD excitation shown in FIG. The lighting device was manufactured.
- the speckle contrast ratio of the irradiation light (average value of light at each point of h1 to h4) emitted from the illumination device was measured using a speckle contrast measurement device (manufactured by OXIDE, “Dr. SPECKLE”). .
- the results are shown in Table 1.
- the speckle contrast ratio of the irradiation light (only LD light) at the time of not using a phosphor ceramic plate was 0.45.
- the phosphor ceramics of the present invention can be applied to various industrial products, and can be used for optical applications such as optical semiconductor devices.
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Abstract
Description
V ≦ 1.30×(-log T)
(Vは、孔径が3.0μm未満である空孔の体積割合(%)を示し、Tは、前記蛍光体セラミックスの厚さ(mm)を示す。)
を満たす[1]に記載の蛍光体セラミックスを含んでいる。
(1)ナトリウム元素が、67ppm以下である。
(2)マグネシウム元素が、23ppm以下である。
(3)鉄元素が、21ppm以下である。
図1Bを参照して、本発明の蛍光体セラミックスの一実施形態に係る蛍光体セラミックスプレート1について説明する。
Vは、孔径が3.0μm未満である空孔(小空孔)の体積割合(%)を示す。Tは、蛍光体セラミックスプレート1の厚さ(mm)を示す。
(1)ナトリウム元素が、67ppm以下、好ましくは、50ppm以下である。
(2)マグネシウム元素が、23ppm以下、好ましくは、20ppm以下である。
(3)鉄元素が、21ppm以下、好ましくは、15ppm以下、より好ましくは、10ppm以下である。
蛍光体セラミックスプレート1を備える光半導体装置8について以下に説明する。
光半導体装置8の第1実施形態およびその製造方法について、図2A~図2Cを参照して説明する。
光半導体装置8の第2実施形態の一実施形態およびその製造方法について、図3A~図3Cを参照して説明する。第2実施形態において、上記した第1実施形態と同様の部材には同様の符号を付し、その説明を省略する。
上記した光半導体装置8の第2実施形態の一実施形態では、図3Cに示すように、波長変換用封止シート4によって、基板7に実装された光半導体素子5を封止して、光半導体装置8を直接製造しているが、例えば、図4Cに示すように、基板7にまだ実装されずに支持シート9に支持された光半導体素子5を封止して、封止光半導体素子12を作製した後に、光半導体装置8を製造することもできる。
上記した光半導体装置8の第2実施形態の一実施形態では、図3Cに示すように、光半導体装置8は、基板7の上には光半導体素子5を囲むように配置されるハウジングを備えていないが、例えば、図5に示すように、光半導体装置8は、ハウジング13を備えることもできる。
光半導体装置8の第3実施形態およびその製造方法について、図6A~図6Cを参照して説明する。第3実施形態において、上記した第1実施形態と同様の部材には同様の符号を付し、その説明を省略する。
次に、蛍光体セラミックスプレート1を備える発光装置の一例としての照明装置20について、図7~図8を参照して説明する。
酸化イットリウム粒子(純度99.99質量%、lot:N-YT4CP、日本イットリウム社製)11.34g、酸化アルミニウム粒子(純度99.99質量%、品番「AKP-30」、住友化学社製)8.577g、および、酸化セリウム粒子(純度99.99質量%)0.087gからなる蛍光体材料の原料粉末を調製した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径4.0μm)を3.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径5.0μm)を3.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径6.5μm)を6.5体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径12.5μm)を12.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径18.0μm)を9.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
蛍光体組成物スラリーの塗布量を調製し、グリーンシートの厚みを厚く調整した以外は、実施例1と同様にして、厚み(T)150μmの蛍光体セラミックスプレートを製造した。
酸化イットリウム粒子(純度99.99質量%、lot:N-YT4CP、日本イットリウム社製)を酸化イットリウム粒子(純度99.8質量%、Nanostructured & Amorphous Materials社製)に変更以外は、実施例2と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径2.5μm)を4.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径4.0μm)を1.5体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径4.0μm)を15.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
有機粒子(ポリメタクリル酸メチル、平均粒子径3.5μm)を3.0体積%添加する代わりに、有機粒子(ポリメタクリル酸メチル、平均粒子径25.0μm)を10.0体積%添加した以外は、実施例1と同様にして、蛍光体セラミックスプレートを製造した。
各実施例および各比較例の蛍光体セラミックスプレートを面方向(厚み方向と直交方向、水平方向)に切断し、その切断表面(面方向)を、レーザー顕微鏡(装置名:レーザーテック、VL2000D、対物レンズ20倍、倍率1800倍)を用いて、孔径を観察した。その後、さらに0.5μm間隔で面方向に切断していき、合計15面(厚み方向7.5μm)の切断表面を観察した。このとき、切断表面に観察される各空孔のうち同一空孔においては、15面の切断表面のうちの最大長さを各空孔の孔径(面方向)とした(図9参照。)。
上記で算出した各空孔の孔径から、各空孔の孔径の平均(各空孔の孔径の合計/空孔の数)を求めた。なお、孔径(面方向)の平均と孔径(厚み方向)の平均との平均を、平均孔径とした。結果を表1に示す。
各実施例および各比較例の蛍光体セラミックスプレートについて、分光光度計(紫外可視近赤外分光光度計V-670、日本分光社製)を用いて任意の3点で全光線透過率(波長800nm)を測定し、3点の平均値を透過率とした。結果を表1に示す。
各実施例および各比較例の蛍光体セラミックスプレートの散乱性を下記の光半導体装置の配光性にて評価した。
各実施例および各比較例の蛍光体セラミックスプレートのNa元素、Mg元素およびFe元素の不純物をICP-MS分析により測定した。結果を表1に示す。
各実施例および比較例の蛍光体セラミックプレートの量子効率を、量子効率測定システム(大塚電子社製、「QE2100」)にて測定した。結果を表1に示す。
光源24として、青色LD光源(ネオアーク社製、「TCSQ0445-1600」)を用い、蛍光体セラミックスプレート1として、各実施例および各比較例の蛍光体セラミックスプレートを用いて、図7に示すLD励起の照明装置を作製した。
2 接着層
3 封止層
5 半導体素子
7 基板
20 照明装置
24 光源
25 反射鏡
27 貫通孔
40 回路基板
41 電極配線
Claims (9)
- 孔径が3.0μm以上12.0μm以下である空孔を有する蛍光体セラミックスであって、
前記蛍光体セラミックスに占める前記空孔の体積割合が、1.5体積%以上9.5体積%以下であることを特徴とする、蛍光体セラミックス。 - 前記蛍光体セラミックスが板状を有し、
下記式:
V ≦ 1.30×(-log T)
(Vは、孔径が3.0μm未満である空孔の体積割合(%)を示し、
Tは、前記蛍光体セラミックスの厚さ(mm)を示す。)
を満たすことを特徴とする、請求項1に記載の蛍光体セラミックス。 - 下記(1)~(3)の少なくとも1つの要件を満たすことを特徴とする、請求項1に記載の蛍光体セラミックス。
(1)ナトリウム元素が、67ppm以下である。
(2)マグネシウム元素が、23ppm以下である。
(3)鉄元素が、21ppm以下である。 - 前記蛍光体セラミックスの平均孔径が、3.0μm以上10.0μm以下であることを特徴とする、請求項1に記載の蛍光体セラミックス。
- 基板と、
前記基板に実装される光半導体素子と、
接着層と、
前記接着層の前記光半導体素子とは反対側の面に配置され、前記光半導体素子と対向配置される請求項1に記載の蛍光体セラミックスと
を備えることを特徴とする、光半導体装置。 - 基板と、
前記基板に実装される光半導体素子と、
前記光半導体素子を封止する封止層と、
前記封止層の前記光半導体素子とは反対側の面に配置され、前記光半導体素子と対向配置される請求項1に記載の蛍光体セラミックスと
を備えることを特徴とする、光半導体装置。 - 光半導体素子と、
前記光半導体素子を封止する封止層と、
前記封止層の前記光半導体素子とは反対側の面に配置され、前記光半導体素子と対向配置される請求項1に記載の蛍光体セラミックスと
を備えることを特徴とする、封止光半導体素子。 - 光半導体素子を厚み方向一方側に実装するための請求項1に記載の蛍光体セラミックスと、
前記蛍光体セラミックスの厚み方向一方面に積層され、前記光半導体素子と電気的に接続するための電極配線と
を備えることを特徴とする、回路基板。 - 光を一方側に照射する光源と、
前記光源と間隔を隔てて一方側に対向配置され、前記光が通過するための貫通孔が形成される反射鏡と、
前記光が照射されるように、前記反射鏡と間隔を隔てて一方側に対向配置される請求項1に記載の蛍光体セラミックスと
を備えることを特徴とする、発光装置。
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