WO2016122053A1 - Transparent electric lighting device - Google Patents

Transparent electric lighting device Download PDF

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Publication number
WO2016122053A1
WO2016122053A1 PCT/KR2015/004805 KR2015004805W WO2016122053A1 WO 2016122053 A1 WO2016122053 A1 WO 2016122053A1 KR 2015004805 W KR2015004805 W KR 2015004805W WO 2016122053 A1 WO2016122053 A1 WO 2016122053A1
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WO
WIPO (PCT)
Prior art keywords
transparent
light emitting
emitting device
wiring
buffer layer
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PCT/KR2015/004805
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French (fr)
Korean (ko)
Inventor
김광복
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금호전기 주식회사
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Publication of WO2016122053A1 publication Critical patent/WO2016122053A1/en

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

Definitions

  • the present invention relates to a transparent electroluminescent device using a light emitting element.
  • Such a transparent electroluminescent device forms a transparent wiring on a glass substrate, and an LED (Light Emitting Diode) is connected to the transparent wiring.
  • LED Light Emitting Diode
  • the LED using the LED is used in a variety of fields, such as a large outdoor billboard or a small indoor billboard in view of the low power and long life.
  • ITO indium tin oxide
  • ITO Indium Tin Oxide
  • One embodiment of the present invention provides a transparent light emitting device capable of lowering the thermal resistance.
  • the present invention provides a transparent electroluminescent device in which the manufacturing process is simple and the process cost can be reduced.
  • Transparent electroluminescent device the first transparent substrate; A plurality of light emitting device packages disposed on the first transparent substrate; A plurality of transparent wires electrically connected to the light emitting device package; And a buffer layer electrically connecting the light emitting device package and the transparent wiring.
  • the buffer layer may be formed in a region where the transparent wiring and the electrode of the light emitting device package are in contact with each other.
  • the buffer layer may be formed thicker than the transparent wiring.
  • the width of the buffer layer may be formed to be narrower than the width of the transparent wiring.
  • the transparent wiring and the buffer layer may include a metal.
  • the buffer layer may include a metal mesh.
  • a transparent electroluminescent device includes a first transparent substrate; A plurality of light emitting device packages disposed on the first transparent substrate; And a plurality of transparent wires electrically connected to the light emitting device package, wherein the transparent wires include a metal mesh.
  • the light emitting device package may include a buffer layer electrically connecting the transparent wiring.
  • the pitch of the metal mesh may be 400 ⁇ m or less, and the width of the metal mesh may be 7 ⁇ m or more.
  • the thermal resistance is lowered to enable uniform light output control.
  • the manufacturing cost can be reduced by using a metal mesh instead of ITO.
  • FIG. 1A and 1B are views for explaining a transparent electroluminescent device according to an embodiment of the present invention.
  • FIG. 2 is a plan view of a first transparent substrate according to an embodiment of the present invention
  • FIG. 3 is an enlarged view of a portion A of FIG. 2;
  • FIG. 4 is an enlarged view of a portion B of FIG. 3,
  • FIG. 5 is a cross-sectional view of FIG. 4 viewed in the I-I direction.
  • 6A is a view for explaining a transparent electroluminescent device according to another embodiment of the present invention.
  • FIG. 7 is a view for explaining the coupling relationship between the light emitting device package and the first transparent substrate according to another embodiment of the present invention.
  • FIG. 8 is a modification of FIG.
  • the terms "comprises” or “having” are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.
  • FIG. 1 is a view for explaining a transparent light emitting device according to an embodiment of the present invention
  • Figure 2 is a plan view of a first transparent substrate according to an embodiment of the present invention
  • Figure 3 is an enlarged portion A of FIG. 4 is an enlarged view of a portion B of FIG. 3
  • FIG. 5 is a cross-sectional view of FIG. 4 viewed from II.
  • a transparent electroluminescent device includes a first transparent substrate 30 and a plurality of light emitting device packages 40 disposed on the first transparent substrate 30. And a plurality of transparent wires 50 electrically connected to the plurality of light emitting device packages 40.
  • the first transparent substrate 30 and the second transparent substrate 10 may be applied as long as the substrate is a transparent material.
  • the first transparent substrate 30 and the second transparent substrate 10 may be glass substrates.
  • the first transparent substrate 30 and the second transparent substrate 10 may be manufactured in various ways according to the glass standard of the general building.
  • a transparent filler 20 may be interposed between the first transparent substrate 30 and the second transparent substrate 10 to fix and protect the plurality of light emitting device packages 40.
  • Various resins may be selected as the transparent filler 20.
  • a rectangular frame 22 is disposed in an edge region of the first transparent substrate 30 and the second transparent substrate 10, and a transparent filler 20 is interposed inside the frame 22.
  • the frame 22 may be a double-sided tape having a predetermined thickness.
  • the second transparent substrate 10 may be spaced apart from the first transparent substrate 30 by the thickness of the frame 22.
  • the present invention is not limited thereto, and the frame 22 may include at least one material selected from Si0 2 , Si x O y , Si 3 N 4 , SiN, SiO x N y , Al 2 O 3 , TiO 2 , and AlN. It may be formed by forming in the border region of the transparent substrate 30 or the second transparent substrate 10.
  • An injection hole is formed at one side of the frame 22 so that the transparent filler 20 may be injected. That is, after sealing the edges of the first transparent substrate 30 and the second transparent substrate 10 with the frame 20, the transparent filler 20 can be injected through the injection hole.
  • the transparent filler 20 may include a protrusion 21 filled in the injection hole. That is, the protrusion 21 may protrude outward from the filling region defined by the frame 22.
  • FIG. 1B illustrates one injection hole
  • the injection hole may be formed at each edge. Therefore, the protrusion 21 may be formed for each edge. According to this structure, the flow of the transparent filler 20 may be improved, thereby reducing the unfilled area.
  • a plurality of light emitting device packages 40 are arranged to have rows and columns in a matrix form.
  • the number of light emitting device packages 40 is not limited, and an appropriate number may be disposed to implement a text or an image.
  • the light emitting device package 40 is driven by a power source individually by the controller 1.
  • the light emitting device package 40 may be a device having three driving electrodes 41b, 41c, and 41d and one common electrode 41a.
  • the driving electrodes 41b, 41c, and 41d may be anode electrodes
  • the common electrode 41a may be a cathode electrode.
  • the light emitting device package 40 may be a package in which a blue LED chip, a green LED chip, and a red LED chip are modularized.
  • the first transparent substrate 30 has a transparent wiring 51 (hereinafter referred to as a common transparent wiring) connected to the common electrode 41a of the light emitting device package 40, and a driving electrode 41b of the light emitting device package 40. , 41c and 41d are connected to the transparent wirings 52, 53, and 54 (hereinafter referred to as driving transparent wirings) electrically. Electrode pads 55 are formed at ends of the transparent wiring, respectively. The electrode pad 55 is electrically connected to a circuit board (not shown) to apply external power to the light emitting device package 40.
  • the light emitting device package 40 may output blue light.
  • the light emitting device package 40 may output white light. Therefore, power may be selectively applied to the first to third driving transparent wirings 52, 53, and 54 to output light of various colors.
  • the color temperature may be adjusted by adjusting the current intensity.
  • the common transparent wiring 51 is commonly connected to the common electrodes 41a of the plurality of light emitting device packages 41 and 42 arranged in a row.
  • each of the driving transparent wirings 52, 53, and 54 is connected to the driving electrodes 41b, 41c, and 41d of the light emitting device package.
  • the width of the driving transparent wiring having a relatively long length may be wider.
  • the width of the first driving transparent wiring 52 connected to the second light emitting device package 42 may be wider than the width of the first driving transparent wiring 52 connected to the first light emitting device package 41. Can be.
  • a buffer layer 56 is disposed in an area where the first light emitting device package 41 and the transparent wiring 52 contact each other. That is, when the light emitting device package has one common electrode and three driving electrodes, four buffer layers are connected to one common electrode and three driving electrodes, respectively.
  • the transparent wiring 52 is indium tin oxide (ITO)
  • ITO indium tin oxide
  • soldering (S) is not possible directly with the electrodes 41b and 41d of the light emitting device package 40 and the thermal resistance is high.
  • the light emitting device package 40 and the transparent wiring 52 may be bonded by solder using the buffer layer 56, and the thermal resistance may be lowered.
  • the buffer layer 56 copper (Cu) or the like having excellent thermal conductivity may be selected.
  • the buffer layer 56 may be made of a metal mesh.
  • the line resistance of the wiring should not exceed 1 kW. Since ITO has a high resistance value, it is necessary to make the width W1 relatively wide to reduce the resistance to 1 kW.
  • the width W2 of the electrodes 41b and 41d of the light emitting device package 40 is made smaller than the width W1 of the transparent wiring 52. Therefore, the width W2 of the buffer layer 56 is preferably smaller than the width W1 of the transparent wiring 52 in terms of cost.
  • the buffer layer 56 since the buffer layer 56 is formed by a printing method using a mask pattern, the buffer layer 56 may be manufactured to have the same width as that of the transparent wiring 52, and thus, the width of the buffer layer 56 may be shorter than that of the adjacent wiring.
  • the thickness d1 of the transparent wiring 52 is manufactured to about 0.2-0.3 micrometer.
  • the buffer layer 56 is manufactured by a printing method using a mask pattern as described above, the buffer layer 56 has a thickness d2 of about 5.0 to 10.0 ⁇ m. That is, the buffer layer 56 is formed to a thickness similar to the thickness of the mask pattern.
  • FIG. 6 is a view for explaining a transparent light emitting device according to another embodiment of the present invention
  • Figure 7 is a view for explaining a coupling relationship between a light emitting device package and a first transparent substrate according to another embodiment of the present invention
  • 8 is a modification of FIG.
  • the above-described configuration may be applied as it is except for the material of the transparent wiring.
  • the common transparent wiring 51a and the driving transparent wirings 52a, 53a, and 54a may be metal meshes M.
  • the metal mesh M may be formed on the first light-transmitting substrate 30 and then patterned to form a transparent wiring.
  • the shape of the metal mesh M is not necessarily limited thereto and may be variously modified. As shown in P2 of FIG. 6B, the metal mesh M may be arranged in a regular hexagon shape, or may be arranged in a hexagonal shape as in P3 of FIG. 6B. Although not shown, predetermined polygonal shapes may be continuously arranged.
  • each metal mesh (M) is increased, the resistance can be lowered and the risk of disconnection can be reduced.
  • Table 1 below shows the resistance value of the metal mesh M, the pitch P, and the line width MW2, measured based on a metal mesh having a channel width MW1 of 790 ⁇ m and a length of 250 mm. The result is.
  • the resistance of the wiring should not exceed 1 kW. Looking at Table 1, if the pitch is 400 ⁇ m or less, and the width is 7 ⁇ m or more it can be seen that the resistance value is 1k ⁇ or less even if the thickness is different.
  • the pitch of the metal mesh M is 400 ⁇ m or less and the width is 7 ⁇ m or more, the light output of the plurality of light emitting device packages 40 may be uniformly controlled even if the thickness of the metal mesh is changed.
  • the pitch of the metal mesh M is 300 ⁇ m to 400 ⁇ m and the width is 10 ⁇ m to 30 ⁇ m, even if the length of the wiring is longer, uniform light output may be controlled to the plurality of light emitting device packages 40.
  • soldering may be directly performed with the electrodes 41b and 41d of the light emitting device package 40.
  • an additional buffer layer 56 may be further formed on the transparent wiring 50a as shown in FIG. 8.
  • the buffer layer 56 is formed relatively thicker than the transparent wiring 50a, the soldering S becomes easier. Therefore, electrical reliability of the electrodes 41b and 41d of the light emitting device package 40 and the transparent wiring 52a may be improved.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Disclosed is a transparent electric lighting device comprising: a first transparent substrate; a plurality of light-emitting diode packages arranged on the first transparent substrate; a plurality of transparent wires electrically connected to the light-emitting diode packages; and a buffer layer for electrically connecting the light-emitting diode packages and the transparent wirings.

Description

투명 전광 장치Transparent flashlight
본 발명은 발광소자를 이용한 투명 전광 장치에 관한 것이다.The present invention relates to a transparent electroluminescent device using a light emitting element.
최근, 조명, 실내외 광고판, 간판 등에 투명 전광 장치가 많이 사용되고 있다. 이러한 투명 전광 장치는 유리 기판상에 투명배선을 형성하고, 투명배선에 LED(Light Emitting Diode)가 연결된다. In recent years, transparent lighting devices have been widely used in lighting, indoor and outdoor billboards, signboards, and the like. Such a transparent electroluminescent device forms a transparent wiring on a glass substrate, and an LED (Light Emitting Diode) is connected to the transparent wiring.
LED를 사용하는 전광 장치는 저전력으로 구동되고 그 수명이 길다는 점에서 옥외의 대형 전광판이나 실내의 소형 전광판 등 다양한 분야에서 사용되고 있다.The LED using the LED is used in a variety of fields, such as a large outdoor billboard or a small indoor billboard in view of the low power and long life.
그러나, 투명배선으로 사용되는 ITO(Indium Tin Oxide)는 LED를 직접적으로 솔더링되지 않아 제조 공정이 복잡해지고, 열 저항(Thermal Resistance)이 높은 문제가 있다.However, indium tin oxide (ITO), which is used as a transparent wiring, does not directly solder an LED, which makes the manufacturing process complicated and has a high thermal resistance.
또한, ITO(Indium Tin Oxide)는 비용이 높고, 휨이나 다른 물리적인 스트레스들에 의해 손상되기 쉽다. 그리고, 높은 도전성을 달성하기 위해 높은 증착 온도 및/또는 높은 어닐링(annealing) 온도를 요구하는 문제가 있다.Indium Tin Oxide (ITO) is also expensive and susceptible to warpage and other physical stresses. In addition, there is a problem of requiring a high deposition temperature and / or a high annealing temperature to achieve high conductivity.
본 발명의 일 실시예는 열저항을 낮출 수 있는 투명 전광 장치를 제공한다.One embodiment of the present invention provides a transparent light emitting device capable of lowering the thermal resistance.
또한, 제조 공정이 간단하고 공정 비용을 절감할 수 있는 투명 전광 장치를 제공한다.In addition, the present invention provides a transparent electroluminescent device in which the manufacturing process is simple and the process cost can be reduced.
본 발명의 일 실시예에 따른 투명 전광 장치는, 제1투명기판; 상기 제1투명기판 상에 배치되는 복수 개의 발광소자 패키지; 상기 발광소자 패키지에 전기적으로 연결되는 복수 개의 투명배선; 및 상기 발광소자 패키지와 투명배선을 전기적으로 연결하는 버퍼층을 포함한다.Transparent electroluminescent device according to an embodiment of the present invention, the first transparent substrate; A plurality of light emitting device packages disposed on the first transparent substrate; A plurality of transparent wires electrically connected to the light emitting device package; And a buffer layer electrically connecting the light emitting device package and the transparent wiring.
상기 버퍼층은 상기 투명배선과 상기 발광소자 패키지의 전극이 접촉되는 영역에 형성될 수 있다. The buffer layer may be formed in a region where the transparent wiring and the electrode of the light emitting device package are in contact with each other.
상기 버퍼층은 상기 투명배선보다 두껍게 형성될 수 있다. The buffer layer may be formed thicker than the transparent wiring.
상기 버퍼층의 폭은 상기 투명배선의 폭보다 좁게 형성될 수 있다. The width of the buffer layer may be formed to be narrower than the width of the transparent wiring.
상기 투명배선과 버퍼층은 금속을 포함할 수 있다. The transparent wiring and the buffer layer may include a metal.
상기 버퍼층은 메탈 메쉬를 포함할 수 있다.The buffer layer may include a metal mesh.
본 발명의 다른 실시예에 따른 투명 전광 장치는, 제1투명기판; 상기 제1투명기판 상에 배치되는 복수 개의 발광소자 패키지; 및 상기 발광소자 패키지에 전기적으로 연결되는 복수 개의 투명배선을 포함하고, 상기 투명배선은 메탈 메쉬를 포함한다.According to another embodiment of the present invention, a transparent electroluminescent device includes a first transparent substrate; A plurality of light emitting device packages disposed on the first transparent substrate; And a plurality of transparent wires electrically connected to the light emitting device package, wherein the transparent wires include a metal mesh.
상기 발광소자 패키지와 투명배선을 전기적으로 연결하는 버퍼층을 포함할 수 있다. The light emitting device package may include a buffer layer electrically connecting the transparent wiring.
상기 메탈 메쉬의 피치는 400㎛이하이고, 상기 메탈 메쉬의 폭은 7㎛이상일 수 있다.The pitch of the metal mesh may be 400 μm or less, and the width of the metal mesh may be 7 μm or more.
본 발명의 일 실시예에 따르면, 열저항이 낮아져 균일한 광출력 제어가 가능해진다.According to one embodiment of the present invention, the thermal resistance is lowered to enable uniform light output control.
또한, ITO 대신 메탈 메쉬를 사용하여 제조 비용을 저감할 수 있다.In addition, the manufacturing cost can be reduced by using a metal mesh instead of ITO.
도 1a 및 1b는 본 발명의 일 실시예에 따른 투명 전광 장치를 설명하기 위한 도면이고,1A and 1B are views for explaining a transparent electroluminescent device according to an embodiment of the present invention.
도 2은 본 발명의 일 실시예에 따른 제1투명기판의 평면도이고,2 is a plan view of a first transparent substrate according to an embodiment of the present invention,
도 3은 도 2의 A부분을 확대한 도면이고, 3 is an enlarged view of a portion A of FIG. 2;
도 4는 도 3의 B부분을 확대한 도면이고,4 is an enlarged view of a portion B of FIG. 3,
도 5는 도 4를 I-I 방향에서 본 단면도이고,FIG. 5 is a cross-sectional view of FIG. 4 viewed in the I-I direction.
도 6a는 본 발명의 다른 실시예에 따른 투명 전광 장치를 설명하기 위한 도면이고,6A is a view for explaining a transparent electroluminescent device according to another embodiment of the present invention;
도 6b는 메탈 메쉬의 변형예이고,6B is a modification of the metal mesh,
도 7은 본 발명의 다른 실시예에 따른 발광소자 패키지와 제1투명기판의 결합 관계를 설명하기 위한 도면이고,7 is a view for explaining the coupling relationship between the light emitting device package and the first transparent substrate according to another embodiment of the present invention,
도 8은 도 7의 변형예이다.8 is a modification of FIG.
본 발명은 다양한 변경을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 상세한 설명에 상세하게 설명하고자 한다.As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description.
그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.
본 발명에서, "포함한다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다. In the present invention, the terms "comprises" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.
또한 본 발명에서 첨부된 도면은 설명의 편의를 위하여 확대 또는 축소하여 도시된 것으로 이해되어야 한다. In addition, it is to be understood that the accompanying drawings in the present invention are shown to be enlarged or reduced for convenience of description.
이제 본 발명에 대하여 도면을 참고하여 상세하게 설명하고, 도면 부호에 관계없이 동일하거나 대응하는 구성 요소는 동일한 참조 번호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings. Like reference numerals designate like elements throughout, and duplicate descriptions thereof will be omitted.
도 1은 본 발명의 일 실시예에 따른 투명 전광 장치를 설명하기 위한 도면이고, 도 2은 본 발명의 일 실시예에 따른 제1투명기판의 평면도이고, 도 3은 도 2의 A부분을 확대한 도면이고, 도 4는 도 3의 B부분을 확대한 도면이고, 도 5는 도 4를 I-I 방향에서 본 단면도이다.1 is a view for explaining a transparent light emitting device according to an embodiment of the present invention, Figure 2 is a plan view of a first transparent substrate according to an embodiment of the present invention, Figure 3 is an enlarged portion A of FIG. 4 is an enlarged view of a portion B of FIG. 3, and FIG. 5 is a cross-sectional view of FIG. 4 viewed from II.
도 1과 도 2를 참고하면, 본 발명의 일 실시예에 따른 투명 전광 장치는, 제1투명기판(30)과, 제1투명기판(30) 상에 배치되는 복수 개의 발광소자 패키지(40)와, 복수 개의 발광소자 패키지(40)에 전기적으로 연결되는 복수 개의 투명배선(50)을 포함한다.1 and 2, a transparent electroluminescent device according to an embodiment of the present invention includes a first transparent substrate 30 and a plurality of light emitting device packages 40 disposed on the first transparent substrate 30. And a plurality of transparent wires 50 electrically connected to the plurality of light emitting device packages 40.
제1투명기판(30)과 제2투명기판(10)은 투명한 재질의 기판이면 모두 적용될 수 있다. 일 예로 제1투명기판(30)과 제2투명기판(10)은 유리 기판일 수 있다. 제1투명기판(30)과 제2투명기판(10)은 일반적인 건물의 유리 규격에 따라 다양하게 제작될 수 있다. The first transparent substrate 30 and the second transparent substrate 10 may be applied as long as the substrate is a transparent material. For example, the first transparent substrate 30 and the second transparent substrate 10 may be glass substrates. The first transparent substrate 30 and the second transparent substrate 10 may be manufactured in various ways according to the glass standard of the general building.
제1투명기판(30)과 제2투명기판(10) 사이에는 투명 충진재(20)가 개재되어 복수 개의 발광소자 패키지(40)를 고정 및 보호할 수 있다. 투명 충진재(20)로 다양한 레진(Resin)이 선택될 수 있다. A transparent filler 20 may be interposed between the first transparent substrate 30 and the second transparent substrate 10 to fix and protect the plurality of light emitting device packages 40. Various resins may be selected as the transparent filler 20.
도 1b를 참조하면, 제1투명기판(30)과 제2투명기판(10)의 테두리 영역에는 사각 형상의 프레임(22)이 배치되고, 프레임(22)의 내부에는 투명 충진재(20)가 개재될 수 있다. 프레임(22)은 소정의 두께를 갖는 양면테이프일 수 있다. 프레임(22)의 두께에 의해 제2투명기판(10)은 제1투명기판(30)으로부터 이격 배치될 수 있다.Referring to FIG. 1B, a rectangular frame 22 is disposed in an edge region of the first transparent substrate 30 and the second transparent substrate 10, and a transparent filler 20 is interposed inside the frame 22. Can be. The frame 22 may be a double-sided tape having a predetermined thickness. The second transparent substrate 10 may be spaced apart from the first transparent substrate 30 by the thickness of the frame 22.
그러나 반드시 이에 한정되는 것은 아니고 프레임(22)은 Si02, SixOy, Si3N4, SiN, SiOxNy, Al2O3, TiO2, AlN 중 선택된 어느 하나 이상의 물질을 제1투명기판(30) 또는 제2투명기판(10)의 테두리 영역에 형성하여 제작할 수도 있다. However, the present invention is not limited thereto, and the frame 22 may include at least one material selected from Si0 2 , Si x O y , Si 3 N 4 , SiN, SiO x N y , Al 2 O 3 , TiO 2 , and AlN. It may be formed by forming in the border region of the transparent substrate 30 or the second transparent substrate 10.
프레임(22)의 일측에는 주입홀이 형성되어 투명 충진재(20)가 주입될 수 있다. 즉, 제1투명기판(30)과 제2투명기판(10)의 테두리를 프레임(20)으로 밀폐한 후, 주입홀을 통해 투명 충진재(20)를 주입할 수 있다. An injection hole is formed at one side of the frame 22 so that the transparent filler 20 may be injected. That is, after sealing the edges of the first transparent substrate 30 and the second transparent substrate 10 with the frame 20, the transparent filler 20 can be injected through the injection hole.
투명 충진재(20)는 주입홀에 채워지는 돌출부(21)를 포함할 수 있다. 즉, 돌출부(21)는 프레임(22)에 의해 정의되는 충전영역에서 외측으로 돌출 형성될 수 있다.The transparent filler 20 may include a protrusion 21 filled in the injection hole. That is, the protrusion 21 may protrude outward from the filling region defined by the frame 22.
도 1b에서는 주입홀이 1개인 것으로 도시되었으나 주입홀은 각 테두리마다 형성될 수도 있다. 따라서, 돌출부(21)는 각 테두리마다 형성될 수도 있다. 이러한 구조에 의하면 투명 충진재(20)의 흐름이 개선되어 미충전영역이 감소할 수 있다.Although FIG. 1B illustrates one injection hole, the injection hole may be formed at each edge. Therefore, the protrusion 21 may be formed for each edge. According to this structure, the flow of the transparent filler 20 may be improved, thereby reducing the unfilled area.
제1투명기판(30) 상에는 복수 개의 발광소자 패키지(40)가 매트릭스 형태로 행과 열을 갖도록 배치된다. 발광소자 패키지(40)의 개수는 제한이 없으며, 문자나 영상을 구현할 수 있도록 적절한 개수가 배치될 수 있다. 발광소자 패키지(40)는 제어부(1)에 의해 개별적으로 전원이 인가되어 구동된다.On the first transparent substrate 30, a plurality of light emitting device packages 40 are arranged to have rows and columns in a matrix form. The number of light emitting device packages 40 is not limited, and an appropriate number may be disposed to implement a text or an image. The light emitting device package 40 is driven by a power source individually by the controller 1.
도 3과 도 4를 참고하면, 발광소자 패키지(40)는 3개의 구동전극(41b, 41c, 41d)과 1개의 공통전극(41a)을 갖는 소자일 수도 있다. 구동전극(41b, 41c, 41d)은 어노드 전극일 수 있고, 공통전극(41a)은 캐소드 전극일 수 있다. 발광소자 패키지(40)는 청색 LED칩과 녹색 LED 칩, 및 적색 LED 칩이 모듈화된 패키지일 수 있다.3 and 4, the light emitting device package 40 may be a device having three driving electrodes 41b, 41c, and 41d and one common electrode 41a. The driving electrodes 41b, 41c, and 41d may be anode electrodes, and the common electrode 41a may be a cathode electrode. The light emitting device package 40 may be a package in which a blue LED chip, a green LED chip, and a red LED chip are modularized.
제1투명기판(30)은 발광소자 패키지(40)의 공통전극(41a)과 연결되는 투명배선(51, 이하 공통 투명배선이라 함)이 연결되고, 발광소자 패키지(40)의 구동전극(41b, 41c, 41d)과 연결되는 투명배선(52, 53, 54, 이하 구동 투명배선이라 함)이 전기적으로 연결된다. 투명배선의 끝단에는 전극패드(55)가 각각 형성된다. 전극패드(55)는 회로기판(미도시)과 전기적으로 연결되어 외부 전원을 발광소자 패키지(40)에 인가한다.The first transparent substrate 30 has a transparent wiring 51 (hereinafter referred to as a common transparent wiring) connected to the common electrode 41a of the light emitting device package 40, and a driving electrode 41b of the light emitting device package 40. , 41c and 41d are connected to the transparent wirings 52, 53, and 54 (hereinafter referred to as driving transparent wirings) electrically. Electrode pads 55 are formed at ends of the transparent wiring, respectively. The electrode pad 55 is electrically connected to a circuit board (not shown) to apply external power to the light emitting device package 40.
일 예로, 공통 투명배선(51)에 전원이 인가된 상태에서, 제1구동 투명배선(52)에 전원이 인가되면 발광소자 패키지(40)는 청색광을 출력할 수 있다. 또한, 제1 내지 제3구동 투명배선(52, 53, 54)에 모두 전원이 인가되면 발광소자 패키지(40)는 백색광을 출력할 수 있다. 따라서, 제1 내지 제3구동 투명배선(52, 53, 54)에 선택적으로 전원을 인가하여 다양한 색상의 광을 출력할 수 있다. 또한, 전류 세기를 조절하여 색온도를 조정할 수도 있다.For example, in a state where power is applied to the common transparent wiring 51, when power is applied to the first driving transparent wiring 52, the light emitting device package 40 may output blue light. In addition, when power is applied to all of the first to third driving transparent wirings 52, 53, and 54, the light emitting device package 40 may output white light. Therefore, power may be selectively applied to the first to third driving transparent wirings 52, 53, and 54 to output light of various colors. In addition, the color temperature may be adjusted by adjusting the current intensity.
공통 투명배선(51)은 일렬로 배열된 복수 개의 발광소자 패키지(41, 42)의 공통전극(41a)에 공통적으로 연결된다. 또한, 각각의 구동 투명배선(52, 53, 54)은 발광소자 패키지의 구동전극(41b, 41c, 41d)에 연결된다. The common transparent wiring 51 is commonly connected to the common electrodes 41a of the plurality of light emitting device packages 41 and 42 arranged in a row. In addition, each of the driving transparent wirings 52, 53, and 54 is connected to the driving electrodes 41b, 41c, and 41d of the light emitting device package.
이때, 복수 개의 발광소자 패키지(40)의 광출력을 균일하게 하기 위해, 길이가 상대적으로 긴 구동 투명배선의 폭을 더 넓게 형성할 수 있다. 일 예로, 제2발광소자 패키지(42)에 연결되는 제1구동 투명배선(52)의 폭은 제1발광소자 패키지(41)에 연결되는 제1구동 투명배선(52)의 폭보다 넓게 형성할 수 있다.In this case, in order to make the light output of the plurality of light emitting device packages 40 uniform, the width of the driving transparent wiring having a relatively long length may be wider. For example, the width of the first driving transparent wiring 52 connected to the second light emitting device package 42 may be wider than the width of the first driving transparent wiring 52 connected to the first light emitting device package 41. Can be.
도 5를 참고하면, 제1발광소자 패키지(41)와 투명배선(52)이 접촉하는 영역에는 버퍼층(56)이 배치된다. 즉, 발광소자 패키지가 1개의 공통전극과 3개의 구동전극을 갖는 경우 4개의 버퍼층이 각각 1개의 공통전극과 3개의 구동전극에 연결된다. Referring to FIG. 5, a buffer layer 56 is disposed in an area where the first light emitting device package 41 and the transparent wiring 52 contact each other. That is, when the light emitting device package has one common electrode and three driving electrodes, four buffer layers are connected to one common electrode and three driving electrodes, respectively.
투명배선(52)이 ITO(Indium Tin Oxide)인 경우, 발광소자 패키지(40)의 전극(41b, 41d)과 직접적으로 솔더링(S)이 불가능하고 열저항이 높은 문제가 있다.When the transparent wiring 52 is indium tin oxide (ITO), there is a problem in that soldering (S) is not possible directly with the electrodes 41b and 41d of the light emitting device package 40 and the thermal resistance is high.
본 발명의 일 실시예에서는 버퍼층(56)을 이용하여 발광소자 패키지(40)와 투명배선(52)을 솔더로 결합시킬 수 있고, 열저항을 낮출 수 있는 장점이 있다. 버퍼층(56)은 열전도도가 우수한 구리(Cu) 등이 선택될 수 있다. 또한, 버퍼층(56)은 메탈 메쉬로 제작할 수도 있다.According to the exemplary embodiment of the present invention, the light emitting device package 40 and the transparent wiring 52 may be bonded by solder using the buffer layer 56, and the thermal resistance may be lowered. As the buffer layer 56, copper (Cu) or the like having excellent thermal conductivity may be selected. In addition, the buffer layer 56 may be made of a metal mesh.
구체적으로 복수 개의 발광소자 패키지(40)의 광출력을 균일하게 하기 위해 배선의 선저항은 1㏀을 넘지 않아야 한다. ITO는 높은 저항값을 갖기 때문에 저항을 1㏀로 낮추기 위해 폭(W1)을 상대적으로 넓게 제작할 필요가 있다.Specifically, in order to make the light output of the plurality of light emitting device packages 40 uniform, the line resistance of the wiring should not exceed 1 kW. Since ITO has a high resistance value, it is necessary to make the width W1 relatively wide to reduce the resistance to 1 kW.
그러나, 발광소자 패키지(40)의 전극(41b, 41d)의 폭(W2)은 투명배선(52)의 폭(W1)에 비해 작게 제작된다. 따라서, 버퍼층(56)의 폭(W2)은 투명배선(52)의 폭(W1)에 비해 좁게 형성되는 것이 비용면에서 바람직하다. However, the width W2 of the electrodes 41b and 41d of the light emitting device package 40 is made smaller than the width W1 of the transparent wiring 52. Therefore, the width W2 of the buffer layer 56 is preferably smaller than the width W1 of the transparent wiring 52 in terms of cost.
또한, 버퍼층(56)은 마스크 패턴을 이용한 인쇄방식으로 형성하므로 투명배선(52)의 폭과 동일하게 제작하는 경우, 오히려 투명배선보다 폭이 넓게 제작되어 이웃한 배선과 단락될 위험이 있다.In addition, since the buffer layer 56 is formed by a printing method using a mask pattern, the buffer layer 56 may be manufactured to have the same width as that of the transparent wiring 52, and thus, the width of the buffer layer 56 may be shorter than that of the adjacent wiring.
일반적으로 ITO는 저항을 낮추기 위해 두께가 얇고 폭이 넓게 제작된다. 따라서, 투명배선(52)의 두께(d1)는 약 0.2 내지 0.3㎛로 제작된다. 그러나, 버퍼층(56)은 전술한 바와 같이 마스크 패턴을 이용한 인쇄 방식으로 제작하므로 약 5.0 내지 10.0㎛의 두께(d2)를 갖는다. 즉 버퍼층(56)은 마스크 패턴의 두께와 유사한 두께로 형성된다.In general, ITO is manufactured to be thin and wide to reduce resistance. Therefore, the thickness d1 of the transparent wiring 52 is manufactured to about 0.2-0.3 micrometer. However, since the buffer layer 56 is manufactured by a printing method using a mask pattern as described above, the buffer layer 56 has a thickness d2 of about 5.0 to 10.0 μm. That is, the buffer layer 56 is formed to a thickness similar to the thickness of the mask pattern.
도 6은 본 발명의 다른 실시예에 따른 투명 전광 장치를 설명하기 위한 도면이고, 도 7은 본 발명의 다른 실시예에 따른 발광소자 패키지와 제1투명기판의 결합 관계를 설명하기 위한 도면이고, 도 8은 도 7의 변형예이다.6 is a view for explaining a transparent light emitting device according to another embodiment of the present invention, Figure 7 is a view for explaining a coupling relationship between a light emitting device package and a first transparent substrate according to another embodiment of the present invention, 8 is a modification of FIG.
본 발명의 다른 실시예에 따른 투명 전광 장치는 투명배선의 재질을 제외하고는 전술한 구성이 그대로 적용될 수 있다.In the transparent electroluminescent device according to another embodiment of the present invention, the above-described configuration may be applied as it is except for the material of the transparent wiring.
도 6a를 참고하면, 공통 투명배선(51a) 및 구동 투명배선(52a, 53a, 54a)은 메탈 메쉬(M)일 수 있다. 구체적으로 제1투광기판(30)상에 메탈 메쉬(M)를 형성한 후 패터닝하여 투명배선을 형성할 수 있다.Referring to FIG. 6A, the common transparent wiring 51a and the driving transparent wirings 52a, 53a, and 54a may be metal meshes M. Referring to FIG. In detail, the metal mesh M may be formed on the first light-transmitting substrate 30 and then patterned to form a transparent wiring.
그러나, 메탈 메쉬(M)의 형상은 반드시 이에 한정되는 것은 아니고 다양하게 변형될 수 있다. 도 6b의 P2와 같이 메탈 메쉬(M)는 정육각형 형상이 연속적으로 배열될 수도 있고, 도 6b의 P3와 같이 육각형의 형상이 연속적으로 배열될 수도 있다. 도시되지는 않았으나 소정의 다각형 형상이 연속적으로 배열될 수도 있다.However, the shape of the metal mesh M is not necessarily limited thereto and may be variously modified. As shown in P2 of FIG. 6B, the metal mesh M may be arranged in a regular hexagon shape, or may be arranged in a hexagonal shape as in P3 of FIG. 6B. Although not shown, predetermined polygonal shapes may be continuously arranged.
이러한 구조에 의하면, 각 메탈 메쉬(M)의 접점이 많아져 저항이 낮아지고 단선의 위험이 감소할 수 있다.According to this structure, the contact of each metal mesh (M) is increased, the resistance can be lowered and the risk of disconnection can be reduced.
하기 표 1은 채널 폭(MW1)이 790㎛이고, 길이가 250mm인 메탈 메쉬를 기준으로, 메탈 메쉬(M)의 두께, 피치(P), 및 선폭(MW2)을 달리하여 저항값을 측정한 결과이다.Table 1 below shows the resistance value of the metal mesh M, the pitch P, and the line width MW2, measured based on a metal mesh having a channel width MW1 of 790 μm and a length of 250 mm. The result is.
표 1
두께(Å) 피치(㎛) 폭(㎛) 저항값(Ω)
3000 300 3 2177
5 1303
7 929
400 3 3511
5 2102
7 1499
4000 300 3 1634
5 977
7 696
400 3 2632
5 1575
7 954
5000 300 3 1633
5 781
7 557
400 3 2105
5 1261
7 899
Table 1
Thickness Pitch (μm) Width (㎛) Resistance value (Ω)
3000 300 3 2177
5 1303
7 929
400 3 3511
5 2102
7 1499
4000 300 3 1634
5 977
7 696
400 3 2632
5 1575
7 954
5000 300 3 1633
5 781
7 557
400 3 2105
5 1261
7 899
전술한 바와 같이 복수 개의 발광소자 패키지(40)의 광출력을 균일하게 하기 위해 배선의 저항은 1㏀을 넘지 않아야 한다. 표 1을 살펴보면, 피치가 400㎛이하이고, 폭이 7㎛이상인 경우에는 두께가 달라져도 저항값이 1㏀이하 임을 알 수 있다. As described above, in order to make the light output of the plurality of light emitting device packages 40 uniform, the resistance of the wiring should not exceed 1 kW. Looking at Table 1, if the pitch is 400㎛ or less, and the width is 7㎛ or more it can be seen that the resistance value is 1㏀ or less even if the thickness is different.
따라서, 메탈 메쉬(M)의 피치가 400㎛이하이고 폭이 7㎛이상을 만족하면, 메탈 메쉬의 두께가 달라져도 복수 개의 발광소자 패키지(40)의 광출력을 균일하게 제어할 수 있다. Therefore, when the pitch of the metal mesh M is 400 μm or less and the width is 7 μm or more, the light output of the plurality of light emitting device packages 40 may be uniformly controlled even if the thickness of the metal mesh is changed.
또한, 메탈 메쉬(M)의 피치가 300㎛ 내지 400㎛이고 폭이 10㎛ 내지 30㎛이면 배선의 길이가 더 길어져도 복수 개의 발광소자 패키지(40)에 균일한 광출력을 제어할 수 있다.In addition, when the pitch of the metal mesh M is 300 μm to 400 μm and the width is 10 μm to 30 μm, even if the length of the wiring is longer, uniform light output may be controlled to the plurality of light emitting device packages 40.
도 7을 참고하면, 투명배선(50a)이 메탈 메쉬이므로 발광소자 패키지(40)의 전극(41b, 41d)와 직접적으로 솔더링(S)이 가능해진다. 이때, 도 8과 같이 투명배선(50a)상에 별도의 버퍼층(56)을 더 형성할 수 있다. Referring to FIG. 7, since the transparent wiring 50a is a metal mesh, soldering (S) may be directly performed with the electrodes 41b and 41d of the light emitting device package 40. In this case, an additional buffer layer 56 may be further formed on the transparent wiring 50a as shown in FIG. 8.
버퍼층(56)은 투명배선(50a)에 비해 상대적으로 두껍게 형성되므로 솔더링(S)이 더욱 용이해진다. 따라서, 발광소자 패키지(40)의 전극(41b, 41d)와 투명배선(52a)의 전기적 신뢰성이 향상될 수 있다.Since the buffer layer 56 is formed relatively thicker than the transparent wiring 50a, the soldering S becomes easier. Therefore, electrical reliability of the electrodes 41b and 41d of the light emitting device package 40 and the transparent wiring 52a may be improved.

Claims (11)

  1. 제1투명기판;A first transparent substrate;
    상기 제1투명기판 상에 배치되는 복수 개의 발광소자 패키지;A plurality of light emitting device packages disposed on the first transparent substrate;
    상기 발광소자 패키지에 전기적으로 연결되는 복수 개의 투명배선; 및A plurality of transparent wires electrically connected to the light emitting device package; And
    상기 발광소자 패키지와 투명배선을 전기적으로 연결하는 버퍼층을 포함하는 투명 전광 장치.Transparent light emitting device comprising a buffer layer for electrically connecting the light emitting device package and the transparent wiring.
  2. 제1항에 있어서,The method of claim 1,
    상기 버퍼층은 상기 투명배선과 상기 발광소자 패키지의 전극이 접촉되는 영역에 형성되는 투명 전광 장치.The buffer layer is formed in a region in which the transparent wiring and the electrode of the light emitting device package contact.
  3. 제2항에 있어서,The method of claim 2,
    상기 버퍼층은 상기 투명배선보다 두꺼운 투명 전광 장치.The buffer layer is a transparent light emitting device thicker than the transparent wiring.
  4. 제3항에 있어서, The method of claim 3,
    상기 버퍼층의 폭은 상기 투명배선의 폭보다 좁은 투명 전광 장치.The width of the buffer layer is a transparent light emitting device narrower than the width of the transparent wiring.
  5. 제1항에 있어서, The method of claim 1,
    상기 버퍼층은 금속을 포함하는 투명 전광 장치.The buffer layer is a transparent light emitting device containing a metal.
  6. 제1항에 있어서, The method of claim 1,
    상기 버퍼층은 메탈 메쉬를 포함하는 투명 전광 장치.The buffer layer is a transparent light emitting device comprising a metal mesh.
  7. 제1항에 있어서, The method of claim 1,
    상기 제1투명기판의 테두리 영역에 배치되는 사각 형상의 프레임, 및 상기 프레임에 충진되어 상기 복수 개의 발광소자 패키지를 커버하는 투명 충진재를 포함하는 투명 전광 장치.And a quadrangular frame disposed at an edge region of the first transparent substrate, and a transparent filler filled in the frame to cover the plurality of light emitting device packages.
  8. 제7항에 있어서, The method of claim 7, wherein
    상기 프레임에 의해 제1투명기판과 이격배치되는 제2투명기판을 포함하는 투명 전광 장치.And a second transparent substrate spaced apart from the first transparent substrate by the frame.
  9. 제1투명기판;A first transparent substrate;
    상기 제1투명기판 상에 배치되는 복수 개의 발광소자 패키지; 및A plurality of light emitting device packages disposed on the first transparent substrate; And
    상기 발광소자 패키지에 전기적으로 연결되는 복수 개의 투명배선을 포함하고,A plurality of transparent wiring is electrically connected to the light emitting device package,
    상기 투명배선은 메탈 메쉬를 포함하는 투명 전광 장치.The transparent wiring is a transparent electroluminescent device comprising a metal mesh.
  10. 제9항에 있어서,The method of claim 9,
    상기 발광소자 패키지와 투명배선을 전기적으로 연결하는 버퍼층을 포함하는 투명 전광 장치.Transparent light emitting device comprising a buffer layer for electrically connecting the light emitting device package and the transparent wiring.
  11. 제9항에 있어서,The method of claim 9,
    상기 메탈 메쉬의 피치는 400㎛이하이고, 상기 메탈 메쉬의 폭은 7㎛이상인 투명 전광 장치.The pitch of the metal mesh is 400㎛ or less, the width of the metal mesh is 7㎛ or more transparent light emitting device.
PCT/KR2015/004805 2015-01-30 2015-05-13 Transparent electric lighting device WO2016122053A1 (en)

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