WO2016121838A1 - 抵抗器及び抵抗器の製造方法 - Google Patents
抵抗器及び抵抗器の製造方法 Download PDFInfo
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- WO2016121838A1 WO2016121838A1 PCT/JP2016/052393 JP2016052393W WO2016121838A1 WO 2016121838 A1 WO2016121838 A1 WO 2016121838A1 JP 2016052393 W JP2016052393 W JP 2016052393W WO 2016121838 A1 WO2016121838 A1 WO 2016121838A1
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- resistor
- ceramic substrate
- heat sink
- curvature
- correction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/01—Mounting; Supporting
- H01C1/012—Mounting; Supporting the base extending along and imparting rigidity or reinforcement to the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/08—Cooling, heating or ventilating arrangements
- H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/028—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
Definitions
- the present invention relates to a resistor including a resistor formed on one surface of a ceramic substrate and a chip resistor having a metal electrode, a metal terminal joined to the metal electrode, and an Al member made of Al or an Al alloy. And a method of manufacturing the resistor.
- a resistor including a resistor formed on one surface of a ceramic substrate and a metal terminal bonded to the resistor is widely used.
- the resistor generates Joule heat according to the applied current value, and the resistor generates heat.
- a device provided with a heat sink (heat sink) has been proposed.
- Patent Document 1 proposes a resistor in which a silicon substrate provided with an insulating layer and a heat sink (heat sink) made of Al are soldered together.
- the present invention has been made in view of the circumstances described above, and includes a resistor in which a ceramic substrate and an Al member are bonded without being bent, and a bonded portion is not damaged, and a method for manufacturing the resistor.
- the purpose is to provide.
- a resistor according to the present invention includes a resistor formed on one surface of a ceramic substrate and a chip resistor including a metal electrode, and a metal terminal electrically connected to the metal electrode.
- An Al member formed on the other surface side of the ceramic substrate, the ceramic substrate and the Al member are joined by an Al-Si brazing material, and the metal electrode and the metal terminal are The Al member is joined by soldering, and the degree of curvature of the facing surface facing the surface on the ceramic substrate side is in the range of ⁇ 30 ⁇ m / 50 mm to 700 ⁇ m / 50 mm.
- the degree of curvature indicates the flatness of the facing surface, and is expressed as a difference between the highest point and the lowest point on the least square surface.
- a state in which the central area of the facing surface protrudes outward from the peripheral area is a positive value
- a state in which the peripheral area of the opposing surface protrudes outward from the central area is a negative numerical value.
- Such warpage of the facing surface is not limited to a shape in which the arbitrary cross section of the facing surface along the surface spreading direction is necessarily symmetric, and the cross section of the facing surface is asymmetric. Even if the warp shape has a shape, the warp amount may be in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the warping amount of the facing surface of the Al member is formed in a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface. It is possible to suppress the occurrence of excessive bending stress on the joint surface with the ceramic substrate, and to prevent peeling of the ceramic substrate and deformation of the ceramic substrate. Also, when another member is joined to the facing surface of the Al member, the adhesion between the Al member and another member can be ensured.
- the Al member is a laminated body of a buffer layer and a heat sink made of Al having a purity of 99.98 mass% or more, and the other surface of the buffer layer and the ceramic substrate are joined by an Al—Si based brazing material. Preferably it is.
- the Al member By constituting the Al member from a laminated body of a buffer layer made of Al with a purity of 99.98 mass% or more and a heat sink, the heat generated in the chip resistor is efficiently propagated to the heat sink, and the heat is quickly dissipated. be able to.
- the buffer layer with high purity Al having a purity of 99.98 mass% or more, the deformation resistance is reduced, and the thermal stress generated in the ceramic substrate when a cooling cycle is loaded can be absorbed by this buffer layer, It is possible to suppress the occurrence of cracks due to thermal stress applied to the ceramic substrate.
- the thickness of the buffer layer is preferably in the range of 0.4 mm or more and 2.5 mm or less.
- transformation by a thermal stress cannot fully be buffered as the thickness of a buffer layer is less than 0.4 mm.
- the thickness of the buffer layer exceeds 2.5 mm, there is a concern that it is difficult to efficiently propagate heat to the Al member.
- the sealing resin has a thermal expansion coefficient of 8 ppm / ° C. or more and 20 ppm.
- the resin is preferably in the range of / ° C or less.
- the volume change due to the thermal expansion of the sealing resin accompanying the heat generation of the resistor can be achieved. It can be minimized. As a result, it is possible to prevent the joint portion from being damaged due to excessive stress applied to the chip resistor or the metal terminal covered with the sealing resin and causing problems such as poor conduction.
- the thickness of the ceramic substrate is preferably in the range of 0.3 mm to 1.0 mm
- the thickness of the Al member is preferably in the range of 2.0 mm to 10.0 mm.
- a method for manufacturing a resistor according to the present invention is a method for manufacturing a resistor according to each of the above items, wherein an Al—Si based brazing material is disposed between the ceramic substrate and the Al member. Then, these are heated while being pressed in the laminating direction to join the ceramic substrate and the Al member with the brazing material to form a joined body, and a curve for correcting the curvature of the Al member. And a straightening process.
- the degree of curvature of the facing surface of the Al member is formed in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface by the correction process. be able to.
- the degree of curvature of the facing surface of the Al member is formed in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface by the correction process.
- the curvature correction step is a step of performing cold correction in which a correction jig having a predetermined curvature is brought into contact with the Al member side of the bonded body, and the bonded body is pressed from the ceramic substrate side.
- the degree of curvature of the facing surface of the Al member can be in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the curving straightening step includes pressure-cooling straightening in which the joined body is sandwiched by flat straightening jigs respectively disposed on the Al member side and the ceramic substrate side, cooled to at least 0 ° C. or lower, and returned to room temperature. It is preferable that it is a process to perform. As a result, the degree of curvature of the facing surface of the Al member can be in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the curvature correction step is preferably a step of arranging a correction jig having a predetermined curvature on the Al member side prior to the joining step.
- the degree of curvature of the facing surface of the Al member can be in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the method for manufacturing a resistor according to the present invention further includes a sealing resin forming step in which a mold is disposed so as to surround the chip resistor and a softened sealing resin is filled in the mold. It is preferable. In this case, since the chip resistor and the metal terminal are molded with an insulating sealing resin, current leakage can be prevented, and a resistor having high withstand voltage can be manufactured. In addition, by covering the chip resistor and metal terminal with sealing resin, it prevents the joint part from being damaged due to excessive stress applied to the chip resistor and metal terminal and causing problems such as poor conduction. Resistor can be manufactured.
- the present invention it is possible to provide a resistor that is excellent in heat resistance and can suppress deterioration of a resistor and a joint during manufacture, and a method for manufacturing the resistor.
- FIG. 1 is a cross-sectional view showing a cross section along the stacking direction of the resistor of the first embodiment.
- the resistor 10 according to the first embodiment includes a ceramic substrate 11 and a chip resistor 16 formed so as to overlap one surface 11 a of the ceramic substrate 11.
- the chip resistor 16 includes a resistor 12 and metal electrodes 13 a and 13 b for applying a voltage to the resistor 12.
- metal terminals 14a and 14b are disposed so as to overlap the metal electrodes 13a and 13b, respectively.
- the metal electrode 13a and the metal terminal 14a, and the metal electrode 13b and the metal terminal 14b are joined by solder.
- a mold 19 surrounding the chip resistor 16 so as to be separated from the chip resistor 16 is disposed around the chip resistor 16.
- the mold 19 is filled with a sealing resin 21.
- a sealing resin 21 is formed so as to cover part of the chip resistor 16 and the metal terminals 14a and 14b.
- a heat sink (Al member) 23 which is an Al member, is disposed so as to overlap.
- Al member 23 is an Al member.
- a plurality of screw holes 24 are formed near the periphery of the heat sink 23.
- a cooler 25 is further attached to the opposite surface of the bonding surface where the heat sink 23 is bonded to the ceramic substrate 11.
- the cooler 25 is fastened to the heat sink 23 by screws 26 that pass through the screw holes 24 of the heat sink 23.
- a highly heat-conductive grease layer 27 is further formed between the cooler 25 and the heat sink 23.
- the ceramic substrate 11 prevents electrical connection between the resistor 12 and the metal electrode 13 and the conductive heat sink 23.
- the ceramic substrate 11 is made of ceramics such as Si 3 N 4 (silicon nitride), AlN (aluminum nitride), and Al 2 O 3 (alumina) that are excellent in insulation and heat resistance. In this embodiment, it is made of highly insulating AlN.
- the thickness of the ceramic substrate 11 made of AlN may be, for example, in the range of 0.3 mm to 1.0 mm, and more preferably in the range of 0.5 mm to 0.83 mm. In the present embodiment, the thickness of the ceramic substrate 11 is set to 0.635 mm.
- the thickness of the ceramic substrate 11 is less than 0.3 mm, there is a concern that sufficient strength against the stress applied to the ceramic substrate 11 cannot be secured. Moreover, when the thickness of the ceramic substrate 11 exceeds 1.0 mm, there is a concern that the thickness of the resistor 10 as a whole increases and it is difficult to reduce the thickness. Therefore, by making the thickness of the ceramic substrate 11 in the range of 0.3 mm or more and 1.0 mm or less, for example, both the strength of the ceramic substrate 11 and the thinning of the entire resistor 10 can be achieved.
- the resistor 12 serves to function as an electric resistance when a current flows through the resistor 10, and examples of the constituent material include a Ta—Si thin film resistor and a RuO 2 thick film resistor.
- the resistor 12 is composed of a Ta—Si-based thin film resistor and has a thickness of, for example, 0.5 ⁇ m.
- the metal electrodes 13a and 13b are electrodes provided on the resistor 12, and are composed of Cu in the present embodiment. Further, the thickness of the metal electrodes 13a and 13b is, for example, 2 ⁇ m or more and 3 ⁇ m or less, and in the present embodiment, the thickness is 1.6 ⁇ m. In the present embodiment, Cu constituting the metal electrodes 13a and 13b includes pure Cu or a Cu alloy. In addition, the metal electrodes 13a and 13b are not limited to Cu, and various metals having high conductivity such as Al and Ag can be employed.
- the metal terminals 14a and 14b are electric terminals whose outer shapes are bent in an approximately L shape, and one end sides thereof are joined to the surfaces of the metal electrodes 13a and 13b by solder. Thereby, the metal terminals 14a and 14b are electrically connected to the metal electrodes 13a and 13b. The other end sides of the metal electrodes 13a and 13b protrude from the sealing resin 21 and are exposed to the outside.
- the metal terminals 14a and 14b are made of Cu as with the metal electrode 13.
- the thickness of the metal terminal 14 is 0.1 mm or more and 0.5 mm or less, and is 0.3 mm in this embodiment.
- solder for joining the metal terminals 14a, 14b and the metal electrodes 13a, 13b examples include Sn—Ag, Sn—In, or Sn—Ag—Cu solder.
- the resistor 10 is connected to an external electronic circuit or the like through the metal terminals 14a and 14b.
- the metal terminal 14 a is a terminal with one polarity of the resistor 10
- the metal terminal 14 b is a terminal with the other polarity of the resistor 10.
- the mold 19 is made of, for example, a heat resistant resin plate.
- the sealing resin 21 filling the inside of the mold 19 is, for example, an insulating resin having a thermal expansion coefficient (linear expansion coefficient) in the temperature range of 30 ° C. to 120 ° C. in the range of 8 ppm / ° C. to 20 ppm / ° C. Used.
- the thermal expansion coefficient in the temperature range of 30 ° C. to 120 ° C. is more preferably 12 ppm / ° C. to 18 ppm / ° C.
- an insulating resin having such a thermal expansion coefficient for example, an epoxy resin containing a SiO 2 filler can be exemplified.
- the sealing resin 21 preferably has a composition of 72 mass% to 84 mass% of SiO 2 filler and 16 mass% to 28 mass% of epoxy resin, 75 mass% to 80 mass% of SiO 2 filler, It is more desirable that the epoxy resin has a composition of 20% by mass to 25% by mass.
- the thermal expansion coefficient of the sealing resin 21 is measured and calculated using DL-7000 manufactured by Alpac Riko Co., Ltd.
- the heat of the sealing resin 21 accompanying the heat generation of the resistor 12 Volume change due to expansion can be minimized. And it can prevent that a junction part is damaged by causing excessive stress with respect to the chip resistor 16 and metal terminal 14a, 14b covered with the sealing resin 21, and causing malfunctions, such as a conduction defect.
- the heat sink (Al member) 23 and the other surface 11b of the ceramic substrate 11 are joined by an Al—Si brazing material.
- the Al—Si brazing material has a melting point of about 600 to 630 ° C.
- the melting point of the solder is low (about 200 to 250 ° C.), so that when the resistor 12 becomes high temperature, the heat sink and the ceramic are There is a concern that the substrate may peel off. Also, since solder is relatively large in expansion and contraction due to temperature changes, cracks are likely to occur, and there is a concern that the heat sink and the ceramic substrate may be separated.
- the heat resistance is greatly enhanced as compared with solder joining, and due to temperature changes. It is possible to reliably prevent the occurrence of cracks at the joint between the heat sink and the ceramic substrate and the peeling between the heat sink and the ceramic substrate.
- the heat sink (Al member) 23 is for releasing the heat generated from the resistor 12, and is made of Al or Al alloy having good thermal conductivity.
- the heat sink 23 is made of an A6063 alloy (Al alloy).
- the heat sink 23 is preferably formed to have a thickness in the range of 2.0 mm to 10.0 mm, for example, in the range of 2.0 mm to 5.0 mm. preferable. If the thickness of the heat sink 23 is less than 2.0 mm, the heat sink 23 may be deformed when stress is applied to the heat sink 23. Moreover, since the heat capacity is too small, there is a concern that heat generated from the resistor 12 cannot be sufficiently absorbed and radiated. On the other hand, if the thickness of the heat sink 23 exceeds 10.0 mm, it is difficult to reduce the thickness of the entire resistor 10 due to the thickness of the heat sink 23, and there is a concern that the entire weight of the resistor 10 becomes too large.
- the heat sink (Al member) 23 is formed such that the degree of curvature of the facing surface 23b facing the surface 23a on the ceramic substrate 11 side is in the range of ⁇ 30 ⁇ m / 50 mm to 700 ⁇ m / 50 mm.
- the degree of curvature of the facing surface 23b indicates the flatness of the facing surface 23b of the heat sink 23, and is expressed as a difference between the highest point and the lowest point on the least square surface.
- the state where the central region of the opposing surface 23b of the heat sink 23 protrudes outward from the peripheral region is a positive value
- the state where the peripheral region of the opposing surface 23b protrudes outward from the central region is a negative numerical value.
- the warpage of the facing surface 23b of the heat sink 23 is not limited to a shape in which an arbitrary cross section of the facing surface along the surface spreading direction has a warped shape that is not necessarily symmetrical.
- the amount of warpage may be in the range of ⁇ 30 ⁇ m / 50 mm to 700 ⁇ m / 50 mm with respect to the flat surface.
- the warpage amount is more preferably in the range of ⁇ 20 ⁇ m / 50 mm to 400 ⁇ m / 50 mm.
- the highest point and the lowest point on the least-squares plane are the points indicating the maximum height in the height direction of the least-squares plane (maximum point) and the positions showing the maximum height in the range of the reference length (50 mm). On the other hand, it is a point indicating the lowest position (lowest point).
- the amount of warpage is calculated by dividing the height difference ( ⁇ m) between the highest point and the lowest point by the reference length (50 mm). Such warpage can be measured using a laser displacement meter.
- the warpage amount of the opposing surface 23b of the heat sink 23 is formed to be in a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface, whereby the ceramic substrate 11 due to the curvature of the heat sink (Al member) 23. Peeling and deformation of the ceramic substrate 11 can be prevented.
- the opposing surface 23 b of the heat sink 23, that is, the surface in contact with the cooler 25 may be slightly curved by joining the heat sink 23 and the ceramic substrate 11. This is because the thermal expansion coefficient of Al constituting the heat sink 23 is larger than the thermal expansion coefficient of the ceramic substrate 11. Thereby, when it is cooled to about room temperature after bonding at a high temperature, the facing surface 23b of the heat sink 23 (the surface in contact with the cooler 25) protrudes in the direction opposite to the ceramic substrate 11 with the central region as the top. To curve.
- the cooler 25 is further provided in the heat sink 23 by keeping the degree of curvature of the facing surface 23b of the heat sink 23 in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less, the heat sink 23 and the cooler Adhesion with 25 can be ensured. Further, it is possible to suppress the occurrence of excessive bending stress on the joint surface between the heat sink 23 and the ceramic substrate 11 and to prevent the heat sink 23 and the ceramic substrate 11 from peeling off.
- a specific method for controlling the amount of warpage of the facing surface 23b of the heat sink 23 to be in a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface is described in detail in the method of manufacturing a resistor. To do.
- the cooler 25 cools the heat sink 23 and prevents the heat sink 23 from rising in temperature as well as the heat dissipation function of the heat sink 23 itself.
- the cooler 25 may be an air-cooled or water-cooled cooler, for example.
- the cooler 25 is fastened to the heat sink 23 by a screw 26 that passes through a screw hole 24 formed in the heat sink 23.
- a highly heat-conductive grease layer 27 is further formed between the cooler 25 and the heat sink 23.
- the grease layer 27 improves the adhesion between the cooler 25 and the heat sink 23, and smoothly propagates the heat of the heat sink 23 toward the cooler 25.
- high heat resistant grease having excellent heat conductivity and heat resistance is used.
- FIG. 2 is a cross-sectional view showing a second embodiment of the resistor of the present invention.
- symbol is provided about the structure same as the resistor of 1st embodiment, The detailed description is abbreviate
- an Al member is constituted by a laminate of a buffer layer 29 made of Al having a purity of 99.98 mass% or more and a heat sink 23. That is, a buffer layer 29 made of Al having a purity of 99.98 mass% or more is formed between the heat sink 23 and the other surface 11 b side of the ceramic substrate 11.
- the heat sink 23 and the ceramic substrate 11 are bonded to the buffer layer 29 by an Al—Si brazing material.
- the buffer layer 29 is a thin plate-like member made of high-purity Al having a purity of 99.98 mass% or more, for example.
- the thickness of this buffer layer 29 should just be 0.4 mm or more and 2.5 mm or less, for example.
- the thickness of the buffer layer 29 is more preferably 0.6 mm or more and 2.0 mm or less.
- the buffer layer 29 by forming the buffer layer 29 with high-purity Al having a purity of 99.98 mass% or more, the deformation resistance is reduced, and the thermal stress generated in the ceramic substrate 11 when the cooling cycle is applied is caused by the buffer layer 29. It can absorb, and it can control that thermal stress is added to ceramic substrate 11, and a crack occurs.
- buffer layer 29 is also preferably formed between the chip resistor 16 and the one surface 11 a side of the ceramic substrate 11.
- the heat sink 23 is curved on the opposing surface 23b. It is formed so that the degree falls within a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less. Thereby, it is possible to suppress the occurrence of excessive bending stress on the joint surface between the heat sink 23 and the ceramic substrate 11 and to prevent the heat sink 23 and the ceramic substrate 11 from being separated.
- FIG. 3 is a cross-sectional view showing a third embodiment of the resistor of the present invention.
- symbol is provided about the structure same as the resistor of 1st embodiment, The detailed description is abbreviate
- the chip resistor 46 has a resistor 42 and metal electrodes 13a and 13b for applying a voltage to the resistor 42.
- a RuO 2 thick film resistor is used as the resistor 42.
- the thickness of the resistor 42 made of a RuO 2 thick film resistor may be, for example, 5 ⁇ m or more and 10 ⁇ m or less, and is 7 ⁇ m in this embodiment.
- the resistor 42 using the RuO 2 thick film resistor is formed by printing a RuO 2 paste on the one surface 11a of the ceramic substrate 11 using a thick film printing method, drying it, and then firing it.
- the resistor 12 made of RuO 2 is obtained.
- the resistor 42 is formed so as to cover one surface 11a of the ceramic substrate 11 and part of the upper surface side of the metal electrodes 13a and 13b.
- the heat sink 23 has a curvature degree of the facing surface 23b of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less. It is formed to fit in the range. Thereby, it is possible to suppress the occurrence of excessive bending stress on the joint surface between the heat sink 23 and the ceramic substrate 11 and to prevent the heat sink 23 and the ceramic substrate 11 from being separated.
- FIGS. 4, 5, and 6. 4 and 5 are cross-sectional views showing the method of manufacturing the resistor according to the first embodiment step by step.
- FIG. 6 is a flowchart showing each step in the method for manufacturing a resistor according to the first embodiment.
- a ceramic substrate 11 made of AlN having a thickness of 0.3 mm to 1.0 mm is prepared.
- a resistor 12 made of a Ta—Si thin film having a thickness of about 0.5 ⁇ m is formed on one surface 11a of the ceramic substrate 11 by using, for example, a sputtering method (resistor Formation process: S01).
- metal electrodes 13a and 13b made of Cu having a thickness of, for example, about 2 to 3 ⁇ m are formed at predetermined positions of the resistor 12 by using, for example, a sputtering method or a plating method.
- Metal electrode forming step: S02 Metal electrode forming step: S02.
- the chip resistor 16 is formed on the one surface 11 a of the ceramic substrate 11. It is also preferable to form a base layer made of Cr in advance under the Cu layer so that the adhesion between the resistor 12 and the metal electrodes 13a and 13b is improved.
- the heat sink 23 is joined to the other surface 11b of the ceramic substrate 11 (joining process: S03).
- an Al—Si based brazing material foil is sandwiched between the other surface 11 b of the ceramic substrate 11 and the heat sink 23.
- a pressing force of 0.5 kgf / cm 2 or more and 10 kgf / cm 2 or less is applied in the stacking direction, and the heating temperature of the vacuum heating furnace is set to 640 ° C. or more and 650 ° C. or less. Hold for 60 minutes or less.
- the heat resistance is greatly improved as compared with joining by soldering, and a high temperature of 800 ° C. is applied at the time of joining. Since it is not necessary, it can prevent that the resistor 12 already formed causes thermal degradation.
- the Al—Si brazing material is less likely to expand and contract due to temperature changes like solder, it is certain that cracks will occur at the joint between the ceramic substrate 11 and the heat sink 23 due to temperature changes, or they will peel off from each other. Can be prevented.
- the ceramic substrate 11 of the heat sink 23 is caused by the difference in thermal expansion coefficient between the heat sink 23 and the ceramic substrate 11.
- the opposing surface 23b with respect to the side surface 23a may be curved so as to protrude in a direction opposite to the ceramic substrate 11 with the central region as a top portion. This is due to a difference in thermal expansion coefficient and a difference in thickness between Al constituting the heat sink 23 and ceramics constituting the ceramic substrate 11.
- the cooler 25 When the cooler 25 is provided on the heat sink 23 in a later step by keeping the degree of curvature of the facing surface 23b (the surface in contact with the cooler 25) of the heat sink 23 within a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less. Adhesion between the heat sink 23 and the cooler 25 can be ensured. Further, excessive bending stress is suppressed from occurring at the joint between the heat sink 23 and the ceramic substrate 11.
- the curved state of the facing surface 23b of the heat sink 23 is measured or confirmed. That is, it is a downward convex curve in which the central region of the opposing surface 23b protrudes outward from the peripheral region, or an upward convex shape in which the peripheral region of the opposing surface 23b protrudes outward from the central region. Check if it is curved.
- a lower pressure plate 32 having a correction surface 32a curved with a predetermined curvature is brought into contact with the opposite surface 23b of the heat sink 23.
- a lower pressure plate 32 having a correction surface 32 a opposite to the curve direction of the facing surface 23 b of the heat sink 23 is used.
- the lower pressure plate 32 having a correction surface 32a made of an upward convex curved surface is used.
- a lower pressure plate 32 having a correction surface 32a made of a downward convex curved surface is used.
- the curvature of the correction surface 32a of the correction jig 32 is formed to be about 2000 mm to 3000 mm, for example.
- the lower pressure plate 32 is brought into contact with the opposing surface 23b of the heat sink 23, and the upper pressure plate 33 is brought into contact with the metal electrodes 13a and 13b, and the pressure spring 38 is used, for example, 0.5 kg / cm 2 to 5 kg. Apply a load of about / cm 2 and perform cold correction at room temperature.
- the facing surface 23b of the heat sink 23 is pressed against the correction surface 32a made of a curved surface having a shape opposite to that of the facing surface 23b, the degree of bending is reduced, and the surface is corrected to a shape close to a flat surface.
- the facing surface 23b of the heat sink 23 after correction obtained in this way is in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the degree of curvature can be corrected stepwise with a plurality of lower pressure plates 32. That is, when the degree of curvature of the facing surface 23b of the heat sink 23 is very large, there is a concern that wrinkles and cracks may occur on the facing surface 23b of the heat sink 23 when correction is performed at once with one lower pressure plate 32. For this reason, a method of performing cold correction in a plurality of times using a plurality of lower pressure plates 32 whose degree of curvature changes step by step and bringing the facing surface 23b of the heat sink 23 closer to a flat surface step by step. Can also be adopted.
- the degree of curvature of the facing surface 23b of the heat sink 23 is corrected so as to be in a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the metal terminals 14a and 14b are joined to the metal electrodes 13a and 13b by soldering (terminal joining step: S05).
- the metal terminals 14a and 14b may be formed by bending a plate material made of Cu having a thickness of about 0.3 mm into a substantially L-shaped cross section.
- the solder for joining the metal electrodes 13a, 13 and the metal terminals 14a, 14b include Sn—Ag, Sn—In, or Sn—Ag—Cu solder. Thereby, the metal electrodes 13a and 13b and the metal terminals 14a and 14b are electrically connected.
- a mold 19 is disposed on one surface 11 a of the ceramic substrate 11 so as to surround the periphery of the chip resistor 16. Then, the inside of the mold 19 is filled with a softened insulating resin to form a sealing resin 21 that seals part of the chip resistor 16 and the metal terminals 14a and 14b (sealing resin forming step: S06).
- the degree of curvature of the facing surface 23b of the heat sink (Al member) 23 is ⁇ 30 ⁇ m / 50 mm or more with respect to the flat surface, By setting the thickness in the range of 700 ⁇ m / 50 mm or less, it is possible to suppress the occurrence of excessive bending stress on the joint surface between the heat sink 23 and the ceramic substrate 11 and to surely prevent the heat sink 23 and the ceramic substrate 11 from peeling off.
- the cooler 25 when the cooler 25 is provided on the heat sink 23, the adhesion between the heat sink 23 and the cooler 25 can be ensured.
- a plurality of screw holes 24 are formed in the vicinity of the periphery of the heat sink 23, and the heat sink 23 and the cooler 25 are fastened by screws 26 passing through the screw holes 24. Adhesiveness with the cooler 25 can be improved. Further, it is possible to suppress an excessive bending stress from being generated on the joint surface between the heat sink 23 and the ceramic substrate 11.
- the ceramic substrate 11 and the heat sink 23 are joined using an Al—Si brazing material, even if the resistor 12 generates heat and becomes high temperature, for example, using solder as in the prior art. Compared to the case of bonding, the bonding strength can be sufficiently maintained and the heat resistance is excellent.
- the joining temperature can be lowered as compared with the case of joining using an Ag—Cu—Ti brazing material as in the prior art, the thermal deterioration of the resistor 12 at the time of joining is ensured. It becomes possible to prevent. And while being able to reduce the thermal load of the ceramic substrate 11 and the resistor 12, a manufacturing process can be simplified and manufacturing cost can be reduced.
- the thickness of the ceramic substrate 11 by setting the thickness of the ceramic substrate 11 to 0.3 mm or more and 1.0 mm or less, it is possible to prevent the ceramic substrate 11 from cracking even if the resistor 12 generates a large number of heats. Furthermore, by setting the thickness of the metal terminals 14a and 14b made of Cu to be 0.1 mm or more, it is possible to ensure a sufficient strength as a terminal and to flow a relatively large current. In addition, by setting the thickness of the metal terminals 14a and 14b to 0.3 mm or less, it is possible to prevent the ceramic substrate 11 from cracking even if the resistor 12 generates a large number of heats.
- the thermal expansion of the sealing resin 21 accompanying the heat generation of the resistor 12 is used. Volume change can be minimized. With such a configuration, it is possible to prevent the joint portion from being damaged due to excessive stress applied to the chip resistor 16 and the metal terminals 14a and 14b covered with the sealing resin 21 and causing problems such as poor conduction. .
- FIG. 7 is sectional drawing which shows 2nd embodiment of the manufacturing method of the resistor of this invention.
- symbol is provided about the structure same as the manufacturing method of the resistor of 1st embodiment, The detailed description is abbreviate
- pressure / cooling correction is performed as a curvature correction step.
- the curvature correction step shown in FIG. 7A first, the curved state of the facing surface 23b of the heat sink 23 is a downward convex curve in which the central region of the facing surface 23b protrudes outward from the peripheral region. Or it is confirmed whether the peripheral area
- the surfaces of the joined body 31 are flat on the facing surface 23b side of the heat sink 23 and the ceramic substrate 11 side (metal electrodes 13a and 13b).
- the correction jigs 34a and 34b are brought into contact with each other. Then, the correction jig 34a and the correction jig 34b are tightened with the fastening screws 35 so that the joined body 31 is clamped with a predetermined load, for example, a load of about 0.5 kg / cm 2 to 5 kg / cm 2 .
- the joined body 31 sandwiched between the correction jigs 34a and 34b is introduced into, for example, the cooling device C, cooled to ⁇ 40 ° C., held in that state for 10 minutes, and then returned to room temperature.
- the degree of curvature of the facing surface 23b of the heat sink 23 is relaxed and corrected to a shape close to a flat surface.
- the facing surface 23b of the heat sink 23 after correction obtained in this manner is stored in a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the correction jigs 34a and 34b used in the curvature correction process as described above are made of metal or ceramic having high hardness.
- it is composed of SUS.
- FIG. 8 is sectional drawing which shows 3rd embodiment of the manufacturing method of the resistor of this invention.
- symbol is provided about the structure same as the manufacturing method of the resistor of 1st embodiment, The detailed description is abbreviate
- the bending correction process is performed simultaneously with the bonding process as pressure correction during bonding. 8A, first, an Al—Si brazing material foil is sandwiched between the other surface 11b of the ceramic substrate 11 and the heat sink 23 using the correction jig 37.
- the lower pressure plate 32 having the correction surface 32a curved with a predetermined curvature is brought into contact with the opposite surface 23b of the heat sink 23, and the upper pressure plate 33 is brought into contact with the metal electrodes 13a and 13b.
- the curvature of the correction surface 32a of the lower pressure plate 32 is formed to be about 2000 mm to 3000 mm, for example.
- the correction jig 37 is pressurized by a pressure spring 38.
- the ceramic substrate 11 and the heat sink 23 sandwiched between the correction jigs are introduced into the vacuum heating furnace, and the heating temperature of the vacuum heating furnace is set to 640 ° C. or higher and 650 ° C. or lower and held for 10 minutes or longer and 60 minutes or shorter.
- the Al—Si brazing material foil disposed between the other surface 11 b of the ceramic substrate 11 and the heat sink 23 is melted, and the ceramic substrate 11 and the heat sink 23 are joined by the brazing material.
- the curvature of the facing surface 23b of the heat sink 23 generated during the joining is corrected by the lower pressure plate 32 provided with the correcting surface 32a, and the facing surface 23b of the heat sink 23 after the correction has a flat surface.
- the curvature of the facing surface 23b of the heat sink 23 generated during the joining is corrected by the lower pressure plate 32 provided with the correcting surface 32a, and the facing surface 23b of the heat sink 23 after the correction has a flat surface.
- FIG. 9 is sectional drawing which shows 4th embodiment of the manufacturing method of the resistor of this invention.
- symbol is provided about the structure same as the manufacturing method of the resistor of 1st embodiment, The detailed description is abbreviate
- an Ag—Pd paste is printed on a predetermined position of one surface 11a of the ceramic substrate 11 by using, for example, a thick film printing method, dried, and then fired.
- Metal electrodes 13a and 13b made of an Ag—Pd thick film of about 7 to 13 ⁇ m are formed (metal electrode forming step).
- a resistor made of a RuO 2 thick film resistor having a thickness of, for example, about 7 ⁇ m so as to contact one surface 11a of the ceramic substrate 11 and the metal electrodes 13a and 13b. 42 is formed (resistor forming step).
- a method for forming the resistor 42 made of a RuO 2 thick film resistor is, for example, a method in which a RuO 2 paste is printed on one surface 11a of the ceramic substrate 11 using a thick film printing method, dried, and then fired. Can be mentioned.
- the heat sink 23 is joined to the other surface 11b of the ceramic substrate 11 (joining process).
- an Al—Si based brazing material foil is sandwiched between the other surface 11 b of the ceramic substrate 11 and the heat sink 23.
- a pressing force of 0.5 kgf / cm 2 or more and 10 kgf / cm 2 or less is applied in the stacking direction, and the heating temperature of the vacuum heating furnace is set to 640 ° C. or more and 650 ° C. or less. Hold for 60 minutes or less.
- the ceramic substrate 11 of the heat sink 23 is caused by the difference in thermal expansion coefficient between the heat sink 23 and the ceramic substrate 11.
- the opposing surface 23b with respect to the side surface 23a may be curved so as to protrude in a direction opposite to the ceramic substrate 11 with the central region as a top portion. This is due to a difference in thermal expansion coefficient and a difference in thickness between Al constituting the heat sink 23 and ceramics constituting the ceramic substrate 11.
- the cooler 25 When the cooler 25 is provided on the heat sink 23 in a later step by keeping the degree of curvature of the facing surface 23b (the surface in contact with the cooler 25) of the heat sink 23 within a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less. Adhesion between the heat sink 23 and the cooler 25 can be ensured. Further, excessive bending stress is suppressed from occurring at the joint between the heat sink 23 and the ceramic substrate 11.
- the curved state of the facing surface 23b of the heat sink 23 is measured or confirmed. That is, it is a downward convex curve in which the central region of the opposing surface 23b protrudes outward from the peripheral region, or an upward convex shape in which the peripheral region of the opposing surface 23b protrudes outward from the central region. Check if it is curved.
- the jig 37 is used to provide a correction surface 32a curved at a predetermined curvature on the facing surface 23b side of the heat sink 23.
- the lower pressure plate 32 is brought into contact.
- a lower pressure plate 32 having a correction surface 32 a opposite to the curve direction of the facing surface 23 b of the heat sink 23 is used.
- the lower pressure plate 32 having a correction surface 32a made of an upward convex curved surface is used.
- a lower pressure plate 32 having a correction surface 32a made of a downward convex curved surface is used.
- the curvature of the correction surface 32a of the correction jig 32 is formed to be about 2000 mm to 3000 mm, for example.
- the lower pressure plate 32 is brought into contact with the opposing surface 23b of the heat sink 23, and the upper pressure plate 33 is brought into contact with the resistor 42, and the pressure spring 38 is used, for example, 0.5 kg / cm 2 to 5 kg / cm.
- the facing surface 23b of the heat sink 23 is pressed against the correction surface 32a made of a curved surface having a shape opposite to that of the facing surface 23b, the degree of bending is reduced, and the surface is corrected to a shape close to a flat surface.
- the facing surface 23b of the heat sink 23 after correction obtained in this way is in the range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the degree of curvature can be corrected stepwise with a plurality of lower pressure plates 32. That is, when the degree of curvature of the facing surface 23b of the heat sink 23 is very large, there is a concern that wrinkles and cracks may occur on the facing surface 23b of the heat sink 23 when correction is performed at once with one lower pressure plate 32. For this reason, a method of performing cold correction in a plurality of times using a plurality of lower pressure plates 32 whose degree of curvature changes step by step and bringing the facing surface 23b of the heat sink 23 closer to a flat surface step by step. Can also be adopted.
- the degree of curvature of the facing surface 23b of the heat sink 23 is corrected so as to be in a range of ⁇ 30 ⁇ m / 50 mm or more and 700 ⁇ m / 50 mm or less with respect to the flat surface.
- the metal terminals 14a and 14b are joined to the metal electrodes 13a and 13b by soldering, the mold frame 19 is disposed on one surface 11a of the ceramic substrate 11, the sealing resin 21 is formed, and the heat sink is further formed.
- a resistor 40 including a resistor 42 made of a RuO 2 thick film resistor as shown in FIG. 3 can be manufactured.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) is laminated on the other surface of the ceramic substrate via an Al—Si based brazing foil, and applied to 3 kgf / cm 2 in the laminating direction. Pressure was applied, and the ceramic substrate and the heat sink were joined with an Al—Si brazing material by holding at 645 ° C. for 30 minutes in a vacuum atmosphere. Then, the opposing surface of the heat sink was corrected to a predetermined degree of curvature (warping amount) by cold correction, which is the correction process shown in the first embodiment of the resistor manufacturing method.
- warping amount predetermined degree of curvature
- the warpage amount of Invention Example 1 is -30 ⁇ m
- the warpage amount of Invention Example 2 is 0 ⁇ m (flat surface)
- the warpage amount of Invention Example 3 is 100 ⁇ m
- the warpage amount of Invention Example 4 is 350 ⁇ m
- the invention example The amount of warping of 5 was 700 ⁇ m.
- Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) is laminated on the other surface of the ceramic substrate via an Al—Si based brazing foil, and applied to 3 kgf / cm 2 in the laminating direction. Pressure was applied, and the ceramic substrate and the heat sink were joined with an Al—Si brazing material by holding at 645 ° C. for 30 minutes in a vacuum atmosphere. Then, the opposing surface of the heat sink was corrected to a predetermined degree of curvature (warping amount) by pressure cooling correction, which is the correction process shown in the second embodiment of the resistor manufacturing method. That is, the amount of warpage of Invention Example 6 was set to 100 ⁇ m. And Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) was laminated on the other surface of the ceramic substrate via an Al—Si brazing material foil.
- a pressing force was applied to 3 kgf / cm 2 in the stacking direction, and the ceramic substrate and the heat sink were bonded to each other with an Al—Si brazing material in a vacuum atmosphere at 645 ° C. for 30 minutes.
- the facing surface of the heat sink was corrected to a predetermined degree of curvature (amount of warpage) at the same time as joining by pressurizing correction at joining, which is the correcting process shown in the third embodiment of the resistor manufacturing method.
- the amount of warpage of Invention Example 7 was 100 ⁇ m.
- Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) is laminated on the other surface of the ceramic substrate via an Al—Si based brazing foil, and applied to 3 kgf / cm 2 in the laminating direction. Pressure was applied, and the ceramic substrate and the heat sink were joined with an Al—Si brazing material by holding at 645 ° C. for 30 minutes in a vacuum atmosphere. Then, the opposing surface of the heat sink was corrected to a predetermined degree of curvature (warping amount) by cold correction, which is the correction process shown in the first embodiment of the resistor manufacturing method. That is, the warping amount of Comparative Example 1 was 800 ⁇ m, and Comparative Example 2 was ⁇ 60 ⁇ m. And Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- Cu was formed on the other surface of the ceramic by sputtering, and then a Cu layer (10 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by plating.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) was joined to the other surface of the ceramic substrate via Sn—Ag solder.
- the straightening process was not performed after joining by solder.
- the amount of warpage of the opposite surface of the heat sink was ⁇ 60 ⁇ m.
- Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- Cu was formed on the other surface of the ceramic by sputtering, and then a Cu layer (10 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by plating.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) was joined to the other surface of the ceramic substrate via Sn—Ag solder.
- the curvature of the opposing surface of the heat sink was corrected by cold correction, which is the correction process shown in the first embodiment of the resistor manufacturing method.
- Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- Cu was formed on the other surface of the ceramic by sputtering, and then a Cu layer (10 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by plating.
- a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) was joined to the other surface of the ceramic substrate via Sn—Ag solder.
- the curvature was correct
- Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- a Ta—Si resistor (10 mm ⁇ 10 mm ⁇ 0.5 ⁇ m) was formed on one surface of a ceramic substrate made of AlN (15 mm ⁇ 11 mm ⁇ 0.635 mmt) by sputtering.
- Cu was formed on both ends of the resistor by a sputtering method, and then a Cu electrode (2 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by a plating method.
- Cu was formed on the other surface of the ceramic by sputtering, and then a Cu layer (10 mm ⁇ 10 mm) having a thickness of 1.6 ⁇ m was formed by plating.
- the other surface of the ceramic substrate and a heat sink (20 mm ⁇ 13 mm ⁇ 3 mmt) made of an Al alloy (A1050) were joined with Sn—Ag solder.
- the curvature of the opposing surface of the heat sink was corrected by pressure correction during bonding, which is the correction process shown in the third embodiment of the resistor manufacturing method.
- Cu terminal was joined on the Cu electrode using Sn-Ag solder.
- the inventive examples 1 to 7 and comparative examples 1 to 6 were respectively subjected to a cooling / heating cycle test, a high temperature standing test, and an energization test.
- a thermal cycle test each sample was repeatedly subjected to a thermal cycle between ⁇ 40 ° C. and 125 ° C. The number of repetitions was 3000 cycles. And after the test, the crack of the joining part of a ceramic substrate and a heat sink, the condition of peeling, and the crack of the ceramic substrate were observed.
- the high temperature standing test each sample was allowed to stand at 125 ° C. for 1000 hours, and the state of cracks and peeling at the joint between the ceramic substrate and the heat sink was observed.
- energization test energization was performed at 200 W for 5 minutes between the Cu terminals of each sample, and the energization state was confirmed.
- Table 1 shows the results of the thermal cycle test, the high temperature storage test, and the energization test performed for each of these samples.
- Table 1 shows the results of the thermal cycle test, the high temperature storage test, and the energization test performed for each of these samples.
- the thermal cycle test the case where cracking, peeling or cracking occurred was indicated as B, and the case where there was no change in the joined state was indicated as A.
- the high temperature standing test the case where cracks or peeling occurred was indicated as B, and the case where the joined state was not changed was indicated as A.
- the current flowed was indicated as A, and the non-conducting current as B.
- Comparative Example 1 the ceramic substrate was cracked after the thermal cycle test. Further, in Comparative Example 2 and Comparative Example 3 in the past, a conduction failure occurred between the terminals in the energization test.
- the degree of curvature is as large as ⁇ 60 ⁇ m, and since heat is not smoothly dissipated, the solder joining the metal electrode and the metal terminal is melted, and the metal electrode and the metal terminal are This is because of electrical disconnection.
- 50% or more of the bonding area was peeled off between the ceramic substrate and the heat sink in the thermal cycle test. Further, in the high temperature storage test, the bonding strength decreased by 30% or more between the ceramic substrate and the heat sink.
- conduction failure occurred between the terminals.
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Abstract
Description
本願は、2015年1月28日に、日本に出願された特願2015-014405号に基づき優先権を主張し、その内容をここに援用する。
しかしながら、従来の接合方法、例えば特許文献1のように、基板と放熱板とをはんだによって接合している場合、後工程で押圧によって湾曲を矯正すると、はんだからクラックが生じやすく、基板と放熱板とが剥離する懸念があった。
また、Al部材の対向面に更に別な部材を接合する際にも、Al部材と、別な部材との密着性を確保することができる。
Al部材を純度が99.98mass%以上のAlからなる緩衝層とヒートシンクとの積層体から構成することによって、チップ抵抗体で発生した熱を効率的にヒートシンクに伝搬させ、熱を速やかに放散することができる。また、緩衝層を純度99.98mass%以上の高純度Alによって形成することで、変形抵抗が小さくなり、冷熱サイクルが負荷された際にセラミックス基板に発生する熱応力をこの緩衝層によって吸収でき、セラミックス基板に熱応力が加わって割れが発生することを抑制することが可能になる。
緩衝層の厚みが0.4mm未満であると、熱応力による変形を充分に緩衝できない懸念がある。また、緩衝層の厚みが2.5mmを超えると、熱を効率的にAl部材に伝搬させることが難しくなる懸念がある。
この場合、チップ抵抗体および金属端子が絶縁性の封止樹脂によってモールドされるので、電流リークを防止でき、抵抗器の高耐圧性を実現できる。また、封止樹脂として熱膨張係数(線膨張率)が8ppm/℃以上、20ppm/℃以下の範囲内の樹脂を用いることによって、抵抗体の発熱に伴う封止樹脂の熱膨張による体積変化を最小に抑えることができる。これによって、封止樹脂に覆われたチップ抵抗体や金属端子に対して過剰な応力が加わることで接合部分がダメージを受け、導通不良等の不具合を起こすことを防止できる。
セラミックス基板の厚みを0.3mm以上1.0mm以下の範囲内にすることによって、セラミックス基板の強度と、抵抗器全体の薄厚化とを両立することができる。また、Al部材の厚みを2.0mm以上、10.0mm以下の範囲内とすることで、充分な熱容量を確保できると共に抵抗器全体の薄厚化も図ることができる。
また、Al部材の対向面に更に別な部材を接合する際にも、Al部材と、別な部材との密着性を確保することが可能になる。
これによって、Al部材の対向面の湾曲の度合いが、平坦面に対して-30μm/50mm以上、700μm/50mm以下の範囲にすることが可能になる。
これによって、Al部材の対向面の湾曲の度合いが、平坦面に対して-30μm/50mm以上、700μm/50mm以下の範囲にすることが可能になる。
これによって、Al部材の対向面の湾曲の度合いが、平坦面に対して-30μm/50mm以上、700μm/50mm以下の範囲にすることが可能になる。
この場合、チップ抵抗体および金属端子が絶縁性の封止樹脂によってモールドされるので、電流リークを防止でき、高耐圧性を備えた抵抗器を製造することができる。また、チップ抵抗体および金属端子を封止樹脂で覆うことによって、チップ抵抗体や金属端子に対して過剰な応力が加わることで接合部分がダメージを受け、導通不良等の不具合を起こすことを防止した抵抗器を製造することができる。
なお、以下に示す各実施形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。また、以下の説明で用いる図面は、本発明の特徴をわかりやすくするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。
本発明の抵抗器の第一実施形態について、添付した図1を参照して説明する。
図1は、第一実施形態の抵抗器の積層方向に沿った断面を示す断面図である。第一実施形態に係る抵抗器10は、セラミックス基板11と、このセラミックス基板11の一方の面11aに重ねて形成されたチップ抵抗体16と、を備えている。このチップ抵抗体16は、抵抗体12及びこの抵抗体12に電圧を印加するための金属電極13a,13bとを有している。また、金属電極13a,13bのそれぞれに重ねて、金属端子14a,14bが配置されている。金属電極13aと金属端子14aとの間、および金属電極13bと金属端子14bとは、それぞれ、はんだによって接合されている。
こうしたセラミックス基板11とヒートシンク23との接合構造は後ほど詳述する。
このヒートシンク23の周縁付近には、複数のネジ穴24が形成されている。
金属端子14aは、抵抗器10の一方の極性の端子とされ、また、金属端子14bは、抵抗器10の他方の極性の端子とされる。
封止樹脂21の熱膨張係数は、アルパック理工(株)製 DL-7000を用いて測定、算出される。
最小二乗面における最高点と最低点とは、基準長さ(50mm)の範囲において、最小二乗面の高さ方向における最大高さを示す位置の点(最高点)と最大高さを示す位置に対して最も低い位置を示す点(最低点)である。反り量は最高点と最低点の高さの差分(μm)を基準長さ(50mm)で除して算出する。
このような反り量はレーザー変位計を用いて測定することが可能である。
図2は、本発明の抵抗器の第二実施形態を示す断面図である。
なお、以下の説明において、第一実施形態の抵抗器と同一の構成に関しては同一の符号を付与し、その詳細な説明は略す。
この第二実施形態の抵抗器30では、純度が99.98mass%以上のAlからなる緩衝層29と、ヒートシンク23との積層体からAl部材を構成している。即ち、ヒートシンク23とセラミックス基板11の他方の面11b側との間に、純度が99.98mass%以上のAlからなる緩衝層29が形成されている。ヒートシンク23およびセラミックス基板11は、この緩衝層29に対して、それぞれAl-Si系のろう材によって接合されている。
図3は、本発明の抵抗器の第三実施形態を示す断面図である。
なお、以下の説明において、第一実施形態の抵抗器と同一の構成に関しては同一の符号を付与し、その詳細な説明は略す。
この第三実施形態の抵抗器40では、チップ抵抗体46は、抵抗体42及びこの抵抗体42に電圧を印加するための金属電極13a,13bとを有している。そして、本実施形態では、抵抗体42として、RuO2系厚膜抵抗体を用いている。
本実施形態では、抵抗体42は、セラミックス基板11の一方の面11aと、金属電極13a,13bの上面側の一部を覆うように形成されている。
次に、第一実施形態に係る抵抗器10の製造方法について、図4、図5、図6を参照して説明する。
図4、図5は、第一実施形態の抵抗器の製造方法を段階的に示した断面図である。また、図6は、第一実施形態の抵抗器の製造方法における各工程を示したフローチャートである。
セラミックス基板11の他方の面11bとヒートシンク23との接合にあたっては、Al-Si系のろう材箔をセラミックス基板11の他方の面11bとヒートシンク23との間に挟み込む。そして、真空加熱炉においては、例えば積層方向に0.5kgf/cm2以上10kgf/cm2以下の加圧力を負荷し、真空加熱炉の加熱温度を640℃以上650℃以下に設定し、10分以上60分以下保持する。これによって、セラミックス基板11の他方の面11bとヒートシンク23との間に配したAl-Si系のろう材箔が溶融し、Al-Si系のろう材によってセラミックス基板11とヒートシンク23とが接合される。これによって、セラミックス基板11とヒートシンク23とからなる接合体31が得られる。
このため、段階的に湾曲の度合いが変化した複数の下部加圧板32を用いて、複数回に分けて冷間矯正を行い、ヒートシンク23の対向面23bを段階的に平坦面に近づけていく方法を採用することもできる。
以上の工程を経て、第一実施形態に係る抵抗器10を製造することができる。
さらに、Cuからなる金属端子14a,14bの厚さを0.1mm以上とすることで、端子としての強度を十分に確保するとともに比較的大きな電流を流すことができる。また、金属端子14a,14bの厚さを0.3mm以下とすることで、抵抗体12の発熱回数が多くてもセラミックス基板11に割れが発生することを抑制できる。
図7は、本発明の抵抗器の製造方法の第二実施形態を示す断面図である。
なお、以下の説明において、第一実施形態の抵抗器の製造方法と同一の構成に関しては同一の符号を付与し、その詳細な説明は略す。
本実施形態の抵抗器の製造方法では、湾曲矯正工程として加圧冷却矯正を行う。
図7(a)に示す湾曲矯正工程では、まず、ヒートシンク23の対向面23bの湾曲状態が対向面23bの中心領域が周縁領域よりも外側に向けて突出した状態である下凸型湾曲であるか、対向面23bの周縁領域が中心領域よりも外側に向けて突出した上凸型湾曲であるかを確認する。
図8は、本発明の抵抗器の製造方法の第三実施形態を示す断面図である。
なお、以下の説明において、第一実施形態の抵抗器の製造方法と同一の構成に関しては同一の符号を付与し、その詳細な説明は略す。
本実施形態の抵抗器の製造方法では、接合時加圧矯正として、湾曲矯正工程を接合工程と同時に行う。
図8(a)に示す接合工程、湾曲矯正工程では、まず、矯正治具37を用いて、セラミックス基板11の他方の面11bとヒートシンク23との間にAl-Si系のろう材箔を挟み込むとともに、ヒートシンク23の対向面23b側に、所定の曲率で湾曲した矯正面32aを備えた下部加圧板32を当接させ、また金属電極13a,13bに上部加圧板33を当接させる。下部加圧板32の矯正面32aの曲率は、例えば、2000mm~3000mm程度となるように形成されている。そして、矯正治具37を加圧バネ38によって加圧する。
図9は、本発明の抵抗器の製造方法の第四実施形態を示す断面図である。
なお、以下の説明において、第一実施形態の抵抗器の製造方法と同一の構成に関しては同一の符号を付与し、その詳細な説明は略す。
図3に示すような、RuO2系厚膜抵抗体からなる抵抗体42を備えた抵抗器40を製造する際には、例えば、厚みが0.3mm以上1.0mm以下のAlNからなるセラミックス基板11を用意する。そして、図9(a)に示すように、セラミックス基板11の一方の面11aの所定位置に、例えば厚膜印刷法を用いてAg-Pdペーストを印刷、乾燥し、その後焼成し、例えば厚みが7~13μm程度のAg-Pd厚膜からなる金属電極13a,13bを形成する(金属電極形成工程)。
このため、段階的に湾曲の度合いが変化した複数の下部加圧板32を用いて、複数回に分けて冷間矯正を行い、ヒートシンク23の対向面23bを段階的に平坦面に近づけていく方法を採用することもできる。
(本発明例1~5)
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Al-Si系ろう材箔を介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を積層し、積層方向に3kgf/cm2に加圧力を付加し、真空雰囲気において、645℃で30分保持して、セラミックス基板とヒートシンクとをAl-Si系ろう材によって接合した。そして、ヒートシンクの対向面を、抵抗器の製造方法における第一実施形態で示した矯正工程である冷間矯正によって、所定の湾曲度合(反り量)に矯正した。即ち、本発明例1の反り量は-30μm、本発明例2の反り量は0μm(平坦面)、本発明例3の反り量は100μm、本発明例4の反り量は350μm、本発明例5の反り量は700μmとした。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Al-Si系ろう材箔を介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を積層し、積層方向に3kgf/cm2に加圧力を付加し、真空雰囲気において、645℃で30分保持して、セラミックス基板とヒートシンクとをAl-Si系ろう材によって接合した。そして、ヒートシンクの対向面を、抵抗器の製造方法における第二実施形態で示した矯正工程である加圧冷却矯正によって、所定の湾曲度合(反り量)に矯正した。即ち、本発明例6の反り量は100μmとした。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Al-Si系ろう材箔を介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を積層した。積層方向に3kgf/cm2に加圧力を付加し、真空雰囲気において、645℃で30分保持して、セラミックス基板とヒートシンクとをAl-Si系ろう材によって接合した。この接合時に、ヒートシンクの対向面を、抵抗器の製造方法における第三実施形態で示した矯正工程である接合時加圧矯正によって、接合と同時に所定の湾曲度合(反り量)に矯正した。本発明例7の反り量は100μmとした。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Al-Si系ろう材箔を介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を積層し、積層方向に3kgf/cm2に加圧力を付加し、真空雰囲気において、645℃で30分保持して、セラミックス基板とヒートシンクとをAl-Si系ろう材によって接合した。そして、ヒートシンクの対向面を、抵抗器の製造方法における第一実施形態で示した矯正工程である冷間矯正によって、所定の湾曲度合(反り量)に矯正した。即ち、比較例1の反り量は800μm、比較例2は-60μmとした。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。さらにセラミックスの他方の面にもCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu層(10mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Sn-Ag系のはんだを介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を接合した。なお、はんだによる接合後に矯正工程は行わなかった。ヒートシンクの対向面の反り量は-60μmとした。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。さらにセラミックスの他方の面にもCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu層(10mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Sn-Ag系のはんだを介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を接合した。そして、ヒートシンクの対向面を、抵抗器の製造方法における第一実施形態で示した矯正工程である冷間矯正によって湾曲を矯正した。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。さらにセラミックスの他方の面にもCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu層(10mm×10mm)を形成した。次いで、セラミックス基板の他方の面には、Sn-Ag系のはんだを介して、Al合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)を接合した。そして、ヒートシンクの対向面を、抵抗器の製造方法における第二実施形態で示した矯正工程である加圧冷却矯正によって湾曲を矯正した。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
AlNからなるセラミックス基板(15mm×11mm×0.635mmt)の一方の面に、スパッタリング法を用いてTa-Si系の抵抗体(10mm×10mm×0.5μm)を形成した。次いで抵抗体の上の両端にCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu電極(2mm×10mm)を形成した。さらにセラミックスの他方の面にもCuをスパッタリング法で形成した後、めっき法で1.6μmの厚さのCu層(10mm×10mm)を形成した。次いで、セラミックス基板の他方の面とAl合金(A1050)からなるヒートシンク(20mm×13mm×3mmt)とをSn-Ag系のはんだによって接合した。この接合時に、ヒートシンクの対向面を、抵抗器の製造方法における第三実施形態で示した矯正工程である接合時加圧矯正によって湾曲を矯正した。そして、Cu電極上にSn-Agはんだを用いて、Cu端子を接合した。
冷熱サイクル試験は、それぞれのサンプルを-40℃~125℃の間で冷熱サイクルを繰り返し行った。繰り返し回数は3000サイクルとした。そして、試験後に、セラミックス基板とヒートシンクとの接合部分のクラックや剥がれの状況及びセラミックス基板の割れを観察した。
高温放置試験は、それぞれのサンプルを125℃で1000時間放置し、セラミックス基板とヒートシンクとの接合部分のクラックや剥がれの状況を観察した。
通電試験は、それぞれのサンプルのCu端子間に、200Wで5分間の通電を行い、通電状況を確認した。
また、高温放置試験では、クラックや剥がれが生じたものはB、接合状態に変化が無かったものはAと表記した。また、通電試験では、電流が流れたものをA、導通しないものをBと表記した。
また、従来の比較例2および比較例3は、通電試験において、端子間に導通不良が生じた。これら比較例2および比較例3は、湾曲度合いが-60μmと大きく、放熱が円滑に行われなくなるために金属電極と金属端子とを接合しているはんだが溶融し、金属電極と金属端子とが電気的に断線したためである。また、比較例3では、冷熱サイクル試験において、セラミックス基板とヒートシンクとの間で、接合面積の50%以上が剥がれる結果となった。また、高温放置試験において、セラミックス基板とヒートシンクとの間で、接合強度が30%以上低下した。また、通電試験において、端子間に導通不良が生じた。
11 セラミックス基板
12 抵抗体
13a,13b 金属電極
14a,14b 金属端子
23 ヒートシンク(Al部材)
29 緩衝層
32 矯正治具
Claims (10)
- セラミックス基板の一方の面に形成された抵抗体及び金属電極を含むチップ抵抗体と、前記金属電極に電気的に接続された金属端子と、前記セラミックス基板の他方の面側に形成されたAl部材と、を備え、
前記セラミックス基板と前記Al部材とが、Al-Si系のろう材によって接合され、
前記金属電極と前記金属端子とがはんだによって接合され、
前記Al部材は、前記セラミックス基板側の面に対向する対向面の湾曲の度合いが、-30μm/50mm以上、700μm/50mm以下の範囲であることを特徴とする抵抗器。 - 前記Al部材は、純度が99.98mass%以上のAlからなる緩衝層とヒートシンクとの積層体であり、該緩衝層と前記セラミックス基板の他方の面がAl-Si系のろう材によって接合されている請求項1に記載の抵抗器。
- 前記緩衝層の厚みが0.4mm以上、2.5mm以下の範囲である請求項2に記載の抵抗器。
- 前記チップ抵抗体、前記金属電極、および前記金属端子は、少なくともその一部が絶縁性の封止樹脂によって覆われ、該封止樹脂は、熱膨張係数が8ppm/℃以上、20ppm/℃以下の範囲の樹脂である請求項1ないし3のいずれか一項に記載の抵抗器。
- 前記セラミックス基板の厚みは0.3mm以上、1.0mm以下の範囲であり、かつ、前記Al部材の厚みは2.0mm以上、10.0mm以下の範囲である請求項1ないし4のいずれか一項に記載の抵抗器。
- 請求項1ないし5いずれか一項に記載された抵抗器を製造する抵抗器の製造方法であって、
前記セラミックス基板と前記Al部材との間に、Al-Si系のろう材を配し、これらを積層方向に沿って加圧しつつ加熱して、前記セラミックス基板と前記Al部材とを前記ろう材によって接合して接合体を形成する接合工程と、
前記Al部材の湾曲を矯正する湾曲矯正工程と、
を備えたことを特徴とする抵抗器の製造方法。 - 前記湾曲矯正工程は、前記接合体の前記Al部材側に所定の曲率をもつ矯正治具を当接させ、前記セラミックス基板側から前記接合体を押圧する、冷間矯正を行う工程である請求項6に記載の抵抗器の製造方法。
- 前記湾曲矯正工程は、前記Al部材側および前記セラミックス基板側にそれぞれ配した平坦な矯正治具で前記接合体を挟持し、少なくとも0℃以下に冷却してから室温に戻す、加圧冷却矯正を行う工程である請求項6に記載の抵抗器の製造方法。
- 前記湾曲矯正工程は、前記接合工程に先だって、前記Al部材側に所定の曲率をもつ矯正治具を配する工程である請求項6に記載の抵抗器の製造方法。
- 前記チップ抵抗体の周囲を取り囲むように型枠を配置し、軟化させた封止樹脂を前記型枠の内部に充填する封止樹脂形成工程を、更に備える請求項6ないし9のいずれか一項に記載の抵抗器の製造方法。
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EP (1) | EP3252781B1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US11790453B2 (en) | 2018-05-04 | 2023-10-17 | Assurant, Inc. | Systems and methods for generating contextually relevant device protections |
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JP2018157201A (ja) * | 2017-03-16 | 2018-10-04 | 三菱マテリアル株式会社 | 抵抗装置、及び、抵抗装置の製造方法 |
EP3404675A1 (de) | 2017-05-15 | 2018-11-21 | EBG Elektronische Bauelemente GmbH | Leistungswiderstand |
US10438729B2 (en) * | 2017-11-10 | 2019-10-08 | Vishay Dale Electronics, Llc | Resistor with upper surface heat dissipation |
DE102018101419A1 (de) * | 2018-01-23 | 2019-07-25 | Biotronik Se & Co. Kg | Elektrischer Widerstand, insbesondere für medizinische Implantate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10247763A (ja) * | 1997-03-05 | 1998-09-14 | Denki Kagaku Kogyo Kk | 回路基板及びその製造方法 |
JP2002503026A (ja) * | 1998-02-06 | 2002-01-29 | カドック・エレクトロニクス・インコーポレーテッド | 接点への回路接続の相違に拘らず、厳密な抵抗許容公差を有する低抵抗、高電力の抵抗器 |
JP2007273661A (ja) * | 2006-03-31 | 2007-10-18 | Neomax Material:Kk | 半導体装置 |
JP2009200258A (ja) * | 2008-02-21 | 2009-09-03 | Toyota Motor Corp | 半導体モジュール |
JP2010287842A (ja) * | 2009-06-15 | 2010-12-24 | Pioneer Trading Co Ltd | 大電力無誘導抵抗器 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4339551C1 (de) * | 1993-11-19 | 1994-10-13 | Heusler Isabellenhuette | Widerstand in SMD-Bauweise und Verfahren zu seiner Herstellung sowie Leiterplatte mit solchem Widerstand |
JPH08306861A (ja) | 1995-04-27 | 1996-11-22 | Sanyo Electric Co Ltd | チップ抵抗体 |
JP3180677B2 (ja) | 1996-08-22 | 2001-06-25 | 三菱マテリアル株式会社 | ヒートシンク付セラミック回路基板 |
JP4692708B2 (ja) * | 2002-03-15 | 2011-06-01 | Dowaメタルテック株式会社 | セラミックス回路基板およびパワーモジュール |
JP4452196B2 (ja) * | 2004-05-20 | 2010-04-21 | コーア株式会社 | 金属板抵抗器 |
US7310036B2 (en) * | 2005-01-10 | 2007-12-18 | International Business Machines Corporation | Heat sink for integrated circuit devices |
US7190252B2 (en) * | 2005-02-25 | 2007-03-13 | Vishay Dale Electronics, Inc. | Surface mount electrical resistor with thermally conductive, electrically insulative filler and method for using same |
JP4641229B2 (ja) * | 2005-08-18 | 2011-03-02 | ローム株式会社 | チップ抵抗器 |
US7982582B2 (en) * | 2007-03-01 | 2011-07-19 | Vishay Intertechnology Inc. | Sulfuration resistant chip resistor and method for making same |
TW200901235A (en) * | 2007-06-29 | 2009-01-01 | Feel Cherng Entpr Co Ltd | Apertured fixed chip resistor and method for fabricating the same |
JP5056340B2 (ja) | 2007-10-22 | 2012-10-24 | トヨタ自動車株式会社 | 半導体モジュールの冷却装置 |
US8325007B2 (en) * | 2009-12-28 | 2012-12-04 | Vishay Dale Electronics, Inc. | Surface mount resistor with terminals for high-power dissipation and method for making same |
JP2012197496A (ja) * | 2011-03-22 | 2012-10-18 | Sumitomo Electric Ind Ltd | 複合部材 |
US8823483B2 (en) * | 2012-12-21 | 2014-09-02 | Vishay Dale Electronics, Inc. | Power resistor with integrated heat spreader |
JP6413230B2 (ja) * | 2013-11-14 | 2018-10-31 | 三菱マテリアル株式会社 | 抵抗器及び抵抗器の製造方法 |
JP6413229B2 (ja) * | 2013-11-14 | 2018-10-31 | 三菱マテリアル株式会社 | 抵抗器及び抵抗器の製造方法 |
-
2015
- 2015-01-28 JP JP2015014405A patent/JP6398749B2/ja active Active
-
2016
- 2016-01-27 KR KR1020177016216A patent/KR102359146B1/ko active IP Right Grant
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- 2016-01-27 EP EP16743441.4A patent/EP3252781B1/en active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10247763A (ja) * | 1997-03-05 | 1998-09-14 | Denki Kagaku Kogyo Kk | 回路基板及びその製造方法 |
JP2002503026A (ja) * | 1998-02-06 | 2002-01-29 | カドック・エレクトロニクス・インコーポレーテッド | 接点への回路接続の相違に拘らず、厳密な抵抗許容公差を有する低抵抗、高電力の抵抗器 |
JP2007273661A (ja) * | 2006-03-31 | 2007-10-18 | Neomax Material:Kk | 半導体装置 |
JP2009200258A (ja) * | 2008-02-21 | 2009-09-03 | Toyota Motor Corp | 半導体モジュール |
JP2010287842A (ja) * | 2009-06-15 | 2010-12-24 | Pioneer Trading Co Ltd | 大電力無誘導抵抗器 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3252781A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11790453B2 (en) | 2018-05-04 | 2023-10-17 | Assurant, Inc. | Systems and methods for generating contextually relevant device protections |
US11790455B2 (en) | 2018-05-04 | 2023-10-17 | Assurant, Inc. | Systems and methods for generating contextually relevant device protections |
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Publication number | Publication date |
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EP3252781B1 (en) | 2021-12-08 |
TWI695390B (zh) | 2020-06-01 |
KR102359146B1 (ko) | 2022-02-04 |
CN107112100B (zh) | 2019-04-12 |
TW201703063A (zh) | 2017-01-16 |
US10121574B2 (en) | 2018-11-06 |
EP3252781A4 (en) | 2018-10-24 |
CN107112100A (zh) | 2017-08-29 |
US20180012685A1 (en) | 2018-01-11 |
KR20170104994A (ko) | 2017-09-18 |
EP3252781A1 (en) | 2017-12-06 |
JP6398749B2 (ja) | 2018-10-03 |
JP2016139732A (ja) | 2016-08-04 |
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