WO2016078113A1 - 掩膜板的清洗方法及清洗装置 - Google Patents

掩膜板的清洗方法及清洗装置 Download PDF

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Publication number
WO2016078113A1
WO2016078113A1 PCT/CN2014/092507 CN2014092507W WO2016078113A1 WO 2016078113 A1 WO2016078113 A1 WO 2016078113A1 CN 2014092507 W CN2014092507 W CN 2014092507W WO 2016078113 A1 WO2016078113 A1 WO 2016078113A1
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Prior art keywords
mask
power source
conductive solution
cleaning method
alkaline conductive
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PCT/CN2014/092507
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English (en)
French (fr)
Inventor
李金川
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深圳市华星光电技术有限公司
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Priority to US14/407,941 priority Critical patent/US20160348266A1/en
Publication of WO2016078113A1 publication Critical patent/WO2016078113A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a cleaning method and a cleaning device for a mask for manufacturing an organic light emitting display panel.
  • OLED Organic Light-Emitting Diode
  • the organic light-emitting layer of an organic light-emitting display panel is generally deposited by vapor deposition using a shadow mask.
  • organic materials such as organic light-emitting layers and other particulate matter such as dust are gradually accumulated on the surface of the mask and the vapor-deposited holes, blocking the vapor-deposited holes, and even causing the mask to occur.
  • the deformation causes the organic material to be accurately vapor-deposited onto the substrate to form a desired organic light-emitting layer, thereby affecting the production yield and increasing the production cost.
  • the phenomenon of photoresist residue may occur during the manufacturing process of the mask.
  • the cleaning agents and chemicals currently used to clean the mask can only remove organic materials, and the cleaning effect on other particles such as dust is extremely poor or even impossible to clean, so that the photoresist residue on the mask cannot be effectively removed and Particles such as dust cannot improve the production yield of the organic light-emitting display panel.
  • the technical problem to be solved by the embodiments of the present invention is to provide a mask cleaning method and a cleaning device, which can effectively remove photoresist residues and dust particles on the mask, and improve the production of the organic light-emitting display panel. Yield.
  • a technical solution adopted by the present invention is to provide a mask cleaning method comprising: cleaning a mask plate with an organic solvent to remove organic materials on the mask plate; and providing an alkaline conductive solution; And immersing the mask in an alkaline conductive solution, wherein the alkaline conductive solution comprises any combination of a potassium hydroxide solution and a sodium hydroxide solution, and the alkaline conductive solution
  • the pH value is greater than or equal to 11; the mask is connected to one of the anode and the cathode of the power source, and the other of the anode and the cathode is immersed in the alkaline conductive solution; and the power source is turned on to ionize the alkaline conductive solution
  • the gas is generated, and the mask is oscillated at a predetermined frequency, so that the contaminants on the mask are carried away from the mask by the gas.
  • the mask is connected to the cathode of the power source, and the anode is immersed in the alkaline conductive solution.
  • the mask plate is provided with an evaporation plate hole
  • the anode and the cathode of the power source are respectively connected with a metal plate
  • connecting the mask plate to one of the anode and the cathode of the power source comprises: setting between the mask plate and the metal plate A predetermined distance such that the gas generated by the gas in the alkaline conductive solution moves to the mask plate has a diameter less than or equal to the diameter of the vapor deposition hole.
  • the anode and the cathode of the power source are connected with a metal plate of the same material, and the metal plate is made of copper.
  • the cleaning method further includes: gradually increasing the discharge current of the power source at a predetermined interval, and the discharge current ranges from 100 amps to 1000 amps. between.
  • a technical solution adopted by the present invention is to provide a mask cleaning method comprising: providing an alkaline conductive solution, and immersing the mask in the alkaline conductive solution; connecting the mask One of the anode and the cathode of the power source, and the other of the anode and the cathode is immersed in the alkaline conductive solution; the power is turned on, the alkaline conductive solution is ionized and a gas is generated, thereby passing the mask on the gas The contaminants are carried away from the mask.
  • the alkaline conductive solution comprises any combination of a potassium hydroxide solution and a sodium hydroxide solution, and the pH of the alkaline conductive solution is greater than or equal to 11.
  • the mask is connected to the cathode of the power source, and the anode is immersed in the alkaline conductive solution.
  • the cleaning method comprises: cleaning the mask with an organic solvent to remove the organic material on the mask.
  • the cleaning method further includes: oscillating the mask plate with ultrasonic waves at a predetermined frequency.
  • the mask plate is provided with an evaporation plate hole
  • the anode and the cathode of the power source are respectively connected with a metal plate
  • connecting the mask plate to one of the anode and the cathode of the power source comprises: setting between the mask plate and the metal plate A predetermined distance such that the gas generated by the gas in the alkaline conductive solution moves to the mask plate has a diameter less than or equal to the diameter of the vapor deposition hole.
  • the anode and the cathode of the power source are connected with a metal plate of the same material, and the metal plate is made of copper.
  • the cleaning method further includes: gradually increasing the discharge current of the power source at a predetermined interval, and the discharge current ranges from 100 amps to 1000 amps. between.
  • another technical solution adopted by the present invention is to provide a mask cleaning device comprising a power source and an alkaline conductive solution contained in the electrolytic cell, and one of the anode and the cathode of the power source is used for Connecting the mask, the other and the mask are immersed in the alkaline conductive solution, and after the power is turned on, the alkaline conductive solution undergoes an ionization reaction and generates a gas, thereby removing the contaminants on the mask by the gas.
  • Mask plate comprising a power source and an alkaline conductive solution contained in the electrolytic cell, and one of the anode and the cathode of the power source is used for Connecting the mask, the other and the mask are immersed in the alkaline conductive solution, and after the power is turned on, the alkaline conductive solution undergoes an ionization reaction and generates a gas, thereby removing the contaminants on the mask by the gas.
  • the alkaline conductive solution comprises any combination of a potassium hydroxide solution and a sodium hydroxide solution, and the pH of the alkaline conductive solution is greater than or equal to 11, the cathode of the power source is used for connecting the mask, and the anode of the power source is immersed in the alkaline In a conductive solution.
  • the embodiment of the invention has the beneficial effects that the embodiment of the invention is designed to connect the mask to one of the anode and the cathode of the power source and immerse in the alkaline conductive solution, and pass the power source when the power is turned on.
  • the anode and cathode discharges cause an ionization reaction of the alkaline conductive solution to generate a gas, thereby using the gas to carry the contaminants on the mask plate away from the mask plate, compared to the prior art cleaning method using an organic solvent, the present invention is implemented
  • the gas generated in the example can effectively remove the photoresist residue on the mask plate and the particles such as dust, thereby improving the production yield of the organic light-emitting display panel and reducing the production cost.
  • FIG. 1 is a schematic flow chart of a cleaning method of a mask according to a first embodiment of the present invention
  • Figure 2 is a side view showing the structure of a cleaning device for a mask according to a preferred embodiment of the present invention
  • FIG. 3 is a flow chart showing a cleaning method of a mask according to a second embodiment of the present invention.
  • the embodiment of the invention provides a cleaning method as shown in FIG. 1 , which is based on the cleaning device shown in FIG. 2 .
  • the cleaning method of this embodiment includes:
  • Step S11 providing an alkaline conductive solution, and immersing the mask in the alkaline conductive solution.
  • the cleaning device 20 includes a power source 21 and an alkaline conductive solution 23 contained in the electrolytic cell 22.
  • the pH of the alkaline conductive solution 23 is preferably greater than or equal to 11, and the alkaline conductive solution 23 may be any combination of a potassium hydroxide KOH solution, a sodium hydroxide NaOH solution, and other alkaline solutions.
  • the anode of the power source 21 is connected with a metal plate 24 to which a metal plate 25 is connected, that is, the metal plate 24 and the metal plate 25 are respectively connected to the positive electrode + the negative electrode of the power source 21 to constitute the anode and the cathode of the electrolytic cell 22.
  • the metal plate 24 and the metal plate 25 have the same material and are all copper plates.
  • the embodiment of the present invention is described as an example of a mask for manufacturing an organic light-emitting layer of an organic light-emitting display panel.
  • the mask can also be used for manufacturing other devices.
  • the mask for fabricating the organic light-emitting layer is provided with a plurality of vapor deposition holes
  • at least the region of the plurality of vapor deposition holes of the mask plate is immersed in the alkaline conductive solution 23, and of course, the mask may be used. All are immersed in the alkaline conductive solution 23.
  • Step S12 The mask plate is connected to one of the anode and the cathode of the power source, and the other of the anode and the cathode of the power source is immersed in the alkaline conductive solution.
  • Step S13 Turn on the power source to cause the alkaline conductive solution to undergo ionization reaction and generate a gas, thereby removing the contaminants on the mask plate from the mask by the gas.
  • the embodiment can effectively remove the photoresist on the surface of the mask and the vapor-deposited hole. Residues and particulate matter such as dust, thereby increasing the production yield of the organic light-emitting display panel and reducing the production cost.
  • the composition of the gas generated by the ionization reaction of the alkaline conductive solution 23 is not limited in the embodiment of the present invention.
  • the alkaline conductive solution 23 obtained by mixing an electronic grade potassium hydroxide KOH solution with deionized water or a conductive solvent when the power source 21 is discharged, the water in the alkaline conductive solution 23 is ionized into hydrogen ions H + and hydrogen.
  • the oxygen ion OH - , KOH ionization is potassium ion K + , hydroxide ion OH - .
  • the hydroxide electrode OH - occurs at the first electrode to generate oxygen O 2 :
  • the hydrogen ion H + undergoes a second electrode reaction to generate hydrogen H 2
  • the potassium ion K + undergoes a third electrode reaction to generate hydrogen H 2 :
  • the embodiment of the present invention preferably connects the mask to the power source 21. cathode.
  • Fig. 3 is a view showing a cleaning method of a mask according to a second embodiment of the present invention, which is further described based on the cleaning method of the first embodiment shown in Fig. 1.
  • This embodiment considers how to better remove dust photoresist residues and dust and the like without damaging the fragile mask.
  • the cleaning method of this embodiment includes:
  • Step S31 cleaning the mask with an organic solvent to remove the organic material on the mask.
  • Contaminants on the mask include organic materials, photoresist residues, and dust.
  • the organic material on the mask is removed by a conventional organic solvent, and after the rinse is performed, step S32 is performed to reduce the pollution by gas removal. The amount of matter.
  • Step S32 providing an alkaline conductive solution, and immersing the mask in the alkaline conductive solution.
  • Step S33 setting a mask plate to have a predetermined distance between one of the anode and the cathode connected thereto, so that the diameter of the gas generated in the alkaline conductive solution when moving to the mask is less than or equal to the mask.
  • the diameter of the vapor deposition hole of the diaphragm is less than or equal to the mask.
  • the predetermined distance between the mask and the metal plate 24 is provided. If the mask is connected to the cathode shown in FIG. 2, the mask is The predetermined distance is between the metal plates 25. Since the bubbles generated by the gas in the alkaline conductive solution 23 become larger as the ascending process increases, and the diameter of the bubble is larger than the diameter of the vapor deposition hole of the mask plate through which it is to pass, the band remains away from the photoresist and The stronger the force of particles such as dust, the better the cleaning effect.
  • Step S34 Turn on the power source to cause the alkaline conductive solution to ionize and generate a gas, thereby removing the contaminants on the mask plate from the mask by the gas.
  • Step S35 The mask is oscillated by ultrasonic waves of a predetermined frequency.
  • Step S34 may be performed first and then step S35 may be performed.
  • Step S35 may be performed first and then step S34 may be performed.
  • Steps S34 and S35 may be performed simultaneously.
  • step S34 is performed after the power source 21 is preferably used, and the alkaline conductive solution 23 undergoes an ionization reaction to generate a gas.
  • Step S36 gradually increase the discharge current of the power supply according to a predetermined interval, and the discharge current ranges from 100 amps to 1000 amps.
  • the setting range of the above-mentioned discharge current is ingeniously designed by the inventors based on the structural characteristics of the mask and the impact velocity of the gas on the residual effect of the photoresist residue and dust, and the like.
  • the setting of the above-described range of the discharge current is not easily conceivable by those skilled in the art.
  • the cleaning device for the mask provided by the embodiment of the present invention is not limited to the cleaning device 20 shown in FIG. 2, and includes the power source and the alkaline conductive solution contained in the electrolytic cell, wherein the anode and the cathode of the power source are provided. One of them is used to connect the mask, the other of the anode and the cathode of the power source, and the mask are immersed in the alkaline conductive solution, and after the power is turned on, the alkaline conductive solution is ionized and generates gas. .
  • the embodiment of the present invention causes the alkaline conductive solution to undergo ionization reaction and generates a gas by discharging the anode and the cathode of the power source, and the gas on the surface of the mask plate and the vapor deposition hole are removed from the mask by using the gas.
  • the embodiment of the present invention It can effectively remove the photoresist residue on the mask and particles such as dust, thereby improving the production yield of the organic light-emitting display panel and reducing the production cost.

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Abstract

一种掩膜板的清洗方法及清洗装置。掩膜板的清洗方法包括：提供碱性导电溶液（23），并将掩膜板浸没于碱性导电溶液（23）中；将掩膜板连接于电源的阳极和阴极中的一个，且阳极和阴极中的另一个浸没于碱性导电溶液（23）中；接通电源，使碱性导电溶液（23）发生电离反应并生成气体，从而通过气体将掩膜板上的污染物带离掩膜板。通过上述清洗方式，能够有效去除掩膜板上的灰尘等颗粒物以及光阻残留，提高有机发光显示面板的生产良率，降低生产成本。

Description

掩膜板的清洗方法及清洗装置 【技术领域】
本发明涉及显示技术领域，特别是涉及一种制造有机发光显示面板的掩膜板的清洗方法及清洗装置。
【背景技术】
有机发光显示面板(Organic Light-Emitting Diode，OLED)作为一种自主发光的显示面板，因其具备结构简单、响应速度快、可弯曲以及省电等优点，已经越来越被业界生产商所推崇。
目前，业界普遍使用掩膜板(Shadow Mask)蒸镀形成有机发光显示面板的有机发光层。随着使用时间和蒸镀次数的增加，制造有机发光层的有机材料和灰尘等其他颗粒物会于掩膜板的表面及其蒸镀孔内逐渐累积，堵塞蒸镀孔，甚至导致掩膜板发生形变，致使有机材料无法准确蒸镀至基板上形成所需的有机发光层，从而影响生产良率并增加生产成本。另外，掩膜板的制造过程中也会出现光阻残留的现象，如果不能有效清除掩膜板表面及其蒸镀孔内的光阻残留，亦会影响生产良率并增加生产成本。然而，当前用于清洗掩膜板的清洁剂和化学药剂仅能够清除有机材料，对于灰尘等其他颗粒物的清洗效果极差甚至无法清洗，因此也就无法有效去除掩膜板上的光阻残留以及灰尘等颗粒物，无法提高有机发光显示面板的生产良率。
【发明内容】
有鉴于此，本发明实施例所要解决的技术问题是提供一种掩膜板的清洗方法及清洗装置，能够有效去除掩膜板上的光阻残留以及灰尘等颗粒物，提高有机发光显示面板的生产良率。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种掩膜板的清洗方法包括：利用有机溶剂清洗掩膜板，以清除掩膜板上的有机材料；提供碱性导电溶液，并将掩膜板浸没于碱性导电溶液中，其中碱性导电溶液包括氢氧化钾溶液和氢氧化钠溶液的任意组合，且碱性导电溶液的 pH值大于或等于11；将掩膜板连接于电源的阳极和阴极中的一个，且阳极和阴极中的另一个浸没于碱性导电溶液中；接通电源，使碱性导电溶液发生电离反应并生成气体，同时以预定频率的超声波震荡掩膜板，从而通过气体将掩膜板上的污染物带离掩膜板。
其中，掩膜板连接于电源的阴极，阳极浸没于碱性导电溶液中。
其中，掩膜板设置有蒸镀孔，电源的阳极和阴极分别连接有金属板，将所述掩膜板连接于电源的阳极和阴极中的一个包括：设置掩膜板与金属板之间具有一预定距离，使得气体在碱性导电溶液中产生的气泡运动至掩膜板时具有的直径，小于或等于蒸镀孔的直径。
其中，电源的阳极和阴极连接有相同材质的金属板，金属板的制造材质包括铜。
其中，接通电源之后，且碱性导电溶液发生电离反应并生成气体的同时，清洗方法进一步包括：按照预定间隔逐渐增大电源的放电电流，且放电电流的取值范围为100安培至1000安培之间。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种掩膜板的清洗方法包括：提供碱性导电溶液，并将掩膜板浸没于碱性导电溶液中；将掩膜板连接于电源的阳极和阴极中的一个，且阳极和阴极中的另一个浸没于碱性导电溶液中；接通电源，使碱性导电溶液发生电离反应并生成气体，从而通过气体将掩膜板上的污染物带离掩膜板。
其中，碱性导电溶液包括氢氧化钾溶液和氢氧化钠溶液的任意组合，且碱性导电溶液的pH值大于或等于11。
其中，掩膜板连接于电源的阴极，阳极浸没于碱性导电溶液中。
其中，将掩膜板浸没于碱性导电溶液中之前，清洗方法包括：利用有机溶剂清洗掩膜板，以清除掩膜板上的有机材料。
其中，接通电源之后，且碱性导电溶液发生电离反应并生成气体的同时，清洗方法进一步包括：以预定频率的超声波震荡掩膜板。
其中，掩膜板设置有蒸镀孔，电源的阳极和阴极分别连接有金属板，将所述掩膜板连接于电源的阳极和阴极中的一个包括：设置掩膜板与金属板之间具有一预定距离，使得气体在碱性导电溶液中产生的气泡运动至掩膜板时具有的直径，小于或等于蒸镀孔的直径。
其中，电源的阳极和阴极连接有相同材质的金属板，金属板的制造材质包括铜。
其中，接通电源之后，且碱性导电溶液发生电离反应并生成气体的同时，清洗方法进一步包括：按照预定间隔逐渐增大电源的放电电流，且放电电流的取值范围为100安培至1000安培之间。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种掩膜板的清洗装置，包括电源以及盛装于电解池中的碱性导电溶液，电源的阳极和阴极中的一个用于连接掩膜板，另一个以及掩膜板浸没于碱性导电溶液中，且在电源接通后，碱性导电溶液发生电离反应并生成气体，从而通过气体将掩膜板上的污染物带离掩膜板。
其中，碱性导电溶液包括氢氧化钾溶液和氢氧化钠溶液的任意组合，且碱性导电溶液的pH值大于或等于11，电源的阴极用于连接掩膜板，电源的阳极浸没于碱性导电溶液中。
通过上述技术方案，本发明实施例产生的有益效果是：本发明实施例设计将掩膜板连接于电源的阳极和阴极中的一个且浸没于碱性导电溶液中，在电源接通时通过电源的阳极和阴极放电使得碱性导电溶液发生电离反应并生成气体，从而利用气体将掩膜板上的污染物带离掩膜板，相比较于现有技术利用有机溶剂的清洗方法，本发明实施例产生的气体能够有效去除掩膜板上的光阻残留以及灰尘等颗粒物，从而提高有机发光显示面板的生产良率，降低生产成本。
【附图说明】
图1是本发明第一实施例的掩膜板的清洗方法的流程示意图；
图2是本发明优选实施例的掩膜板的清洗装置的结构侧视图；
图3是本发明第二实施例的掩膜板的清洗方法的流程示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，本发明以下所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普 通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
本发明实施例提供一种如图1所示的清洗方法，其基于图2所示的清洗装置。请结合图1和图2所示，本实施例的清洗方法包括：
步骤S11：提供碱性导电溶液，并将掩膜板浸没于碱性导电溶液中。
如图2所示，清洗装置20包括电源21以及盛装于电解池22中的碱性导电溶液23。其中，优选碱性导电溶液23的pH值大于或等于11，且碱性导电溶液23可以为氢氧化钾KOH溶液、氢氧化钠NaOH溶液以及其他碱性溶液的任意组合。电源21的阳极连接有金属板24，阴极连接有金属板25，即金属板24和金属板25分别对应与电源21的正极+和负极-连接，以构成电解池22的阳极和阴极。本实施例优选金属板24和金属板25的材质相同，均为铜板。
本发明实施例全文以用于制造有机发光显示面板的有机发光层的掩膜板为例进行描述，当然掩膜板还可以用于制造其他装置。鉴于制造有机发光层的掩膜板设置有多个蒸镀孔，本实施例优选至少将掩膜板的多个蒸镀孔所在区域浸没于碱性导电溶液23中，当然也可将掩膜板全部浸没于碱性导电溶液23中。
步骤S12：将掩膜板连接于电源的阳极和阴极中的一个，且电源的阳极和阴极中的另一个浸没于碱性导电溶液中。
步骤S13：接通电源，使碱性导电溶液发生电离反应并生成气体，从而通过气体将掩膜板上的污染物带离掩膜板。
请再次参阅图2所示，在电源21接通时，电源21的阳极和阴极放电使得碱性导电溶液23发生电离反应并生成气体，气体在上升至碱性导电溶液23的液面的过程中将掩膜板表面和蒸镀孔内的污染物带离掩膜板，相比较于现有技术的有机溶剂的清洗方法，本实施例能够有效去除掩膜板表面和蒸镀孔内的光阻残留以及灰尘等颗粒物，从而提高有机发光显示面板的生产良率，降低生产成本。
需要指出的是，对于碱性导电溶液23发生电离反应生成的气体的成分，本发明实施例不予以限制。例如，对于由电子级的氢氧化钾KOH溶液与去离子水、导电溶剂混合而成的碱性导电溶液23，电源21放电时，碱性导电 溶液23中的水电离为氢离子H+、氢氧根离子OH-，KOH电离为钾离子K+、氢氧根离子OH-。并且，
在阳极，氢氧根离子OH-发生第一电极反应生成氧气O2：
4OH-→4e-+O2↑+2H2O
在阴极，氢离子H+发生第二电极反应生成氢气H2，且钾离子K+发生第三电极反应生成氢气H2：
2H++2e-→H2↑
2K++2e-+2H2O→2KOH+H2↑。
基于第一电极反应、第二电极反应以及第三电极反应，可知在阴极所在区域产生的气体是阳极所在区域产生的气体的两倍，故此本发明实施例优选将掩膜板连接于电源21的阴极。
图3是本发明第二实施例的掩膜板的清洗方法，其在图1所示的第一实施例的清洗方法的基础上进行进一步描述。与第一实施例的不同之处在于，本实施例考虑到在不损坏脆弱的掩膜板的前提下，如何更好的清除灰尘光阻残留以及灰尘等颗粒物。
请参阅图3并结合图2所示，本实施例的清洗方法包括：
步骤S31：利用有机溶剂清洗掩膜板，以清除掩膜板上的有机材料。
掩膜板上的污染物包括有机材料、光阻残留以及灰尘等颗粒物，本步骤利用传统的有机溶剂清除掩膜板上的有机材料，并在冲洗干净后执行步骤S32，可降低通过气体清除污染物的量。
步骤S32：提供碱性导电溶液，并将掩膜板浸没于碱性导电溶液中。
步骤S33：设置掩膜板与其连接的阳极和阴极中的一个金属板之间具有一预定距离，使得气体在碱性导电溶液中产生的气泡运动至掩膜板时具有的直径，小于或等于掩膜板的蒸镀孔的直径。
具体而言，若将掩膜板连接于图2所示阳极，则掩膜板与金属板24之间具有该预定距离，若将掩膜板连接于图2所示阴极，则掩膜板与金属板25之间具有该预定距离。由于气体在碱性导电溶液23中产生的气泡会随着上升过程不断变大，并且气泡的直径越是大于其所要穿过的掩膜板的蒸镀孔的直径，则带离光阻残留以及灰尘等颗粒物的作用力越强，清洗效果也就越佳。
步骤S34：接通电源，使碱性导电溶液发生电离反应并生成气体，从而通过气体将掩膜板上的污染物带离掩膜板。
步骤S35：以预定频率的超声波震荡掩膜板。
本步骤与步骤S34没有必然的先后顺序，可以先执行步骤S34再执行步骤S35，也可以先执行步骤S35再执行步骤S34，还可以同时执行步骤S34和步骤S35。本实施例优选电源21之后，且碱性导电溶液23发生电离反应并生成气体的同时，执行步骤S34。
在电离反应生成气体的同时，保持掩膜板的震荡可更好的清除灰尘光阻残留以及灰尘等颗粒物。
步骤S36：按照预定间隔逐渐增大电源的放电电流，且放电电流的取值范围为100安培至1000安培之间。
由于电流的增大会加快碱性导电溶液23的电离反应，快速产生大量气泡，利用气泡的冲击速度可更好的清除光阻残留以及灰尘等颗粒物。逐步增大电流可避免大量气泡的快速产生冲击掩膜板，从而防止脆弱的掩膜板由于受到冲击力而发生形变。
值得注意的是，上述放电电流的取值范围的设定是本发明人根据掩膜板的结构特性以及气体的冲击速度对光阻残留以及灰尘等颗粒物的清除效果而独创性设计出来的，因此上述放电电流的取值范围的设定并不是本领域技术人员能够轻易想到的。
另外，需要说明的是，本实施例的清洗方法相比较于图1所示第一实施例的清洗方法，多出的步骤可分别与第一实施例相结合以构成其他实施例，并不限于图3所示实施例。
同理，本发明实施例提供的掩膜板的清洗装置，也不限于图2所示的清洗装置20，只要包括电源以及盛装于电解池中的碱性导电溶液，其中，电源的阳极和阴极中的一个用于连接掩膜板，电源的阳极和阴极中的另一个以及掩膜板浸没于碱性导电溶液中，且在电源接通后，碱性导电溶液发生电离反应并生成气体即可。
综上所述，本发明实施例通过电源的阳极和阴极放电使得碱性导电溶液发生电离反应并生成气体，利用气体将掩膜板表面以及蒸镀孔内的污染物带离掩膜板，相比较于现有技术的有机溶剂的清洗方法，本发明实施例 能够有效去除掩膜板上的光阻残留以及灰尘等颗粒物，从而提高有机发光显示面板的生产良率，降低生产成本。
再次说明，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种掩膜板的清洗方法，其特征在于，所述清洗方法包括：
    利用有机溶剂清洗所述掩膜板，以清除所述掩膜板上的有机材料；
    提供碱性导电溶液，并将所述掩膜板浸没于所述碱性导电溶液中，其中所述碱性导电溶液包括氢氧化钾溶液和氢氧化钠溶液的任意组合，且所述碱性导电溶液的pH值大于或等于11；
    将所述掩膜板连接于电源的阳极和阴极中的一个，且所述电源的阳极和阴极中的另一个浸没于所述碱性导电溶液中；
    接通所述电源，使所述碱性导电溶液发生电离反应并生成气体，同时以预定频率的超声波震荡所述掩膜板，从而通过所述气体将所述掩膜板上的污染物带离所述掩膜板。
  2. 根据权利要求1所述的清洗方法，其特征在于，所述掩膜板连接于所述电源的阴极，所述电源的阳极浸没于所述碱性导电溶液中。
  3. 根据权利要求1所述的清洗方法，其特征在于，所述掩膜板设置有蒸镀孔，所述电源的阳极和阴极分别连接有金属板，所述将所述掩膜板连接于电源的阳极和阴极中的一个包括：
    设置所述掩膜板与所述金属板之间具有一预定距离，使得所述气体在所述碱性导电溶液中产生的气泡运动至所述掩膜板时具有的直径，小于或等于所述蒸镀孔的直径。
  4. 根据权利要求3所述的清洗方法，其特征在于，所述电源的阳极和阴极连接有相同材质的金属板，所述金属板的制造材质包括铜。
  5. 根据权利要求1所述的清洗方法，其特征在于，所述接通所述电源之后，且所述碱性导电溶液发生电离反应并生成气体的同时，所述清洗方法进一步包括：
    按照预定间隔逐渐增大所述电源的放电电流，且所述放电电流的取值范围为100安培至1000安培之间。
  6. 一种掩膜板的清洗方法，其特征在于，所述清洗方法包括：
    提供碱性导电溶液，并将所述掩膜板浸没于所述碱性导电溶液中；
    将所述掩膜板连接于电源的阳极和阴极中的一个，且所述电源的阳极 和阴极中的另一个浸没于所述碱性导电溶液中；
    接通所述电源，使所述碱性导电溶液发生电离反应并生成气体，从而通过所述气体将所述掩膜板上的污染物带离所述掩膜板。
  7. 根据权利要求6所述的清洗方法，其特征在于，所述碱性导电溶液包括氢氧化钾溶液和氢氧化钠溶液的任意组合，且所述碱性导电溶液的pH值大于或等于11。
  8. 根据权利要求7所述的清洗方法，其特征在于，所述掩膜板连接于所述电源的阴极，所述电源的阳极浸没于所述碱性导电溶液中。
  9. 根据权利要求6所述的清洗方法，其特征在于，所述将所述掩膜板浸没于所述碱性导电溶液中之前，所述清洗方法包括：
    利用有机溶剂清洗所述掩膜板，以清除所述掩膜板上的有机材料。
  10. 根据权利要求6所述的清洗方法，其特征在于，所述接通所述电源之后，且所述碱性导电溶液发生电离反应并生成气体的同时，所述清洗方法进一步包括：
    以预定频率的超声波震荡所述掩膜板。
  11. 根据权利要求6所述的清洗方法，其特征在于，所述掩膜板设置有蒸镀孔，所述电源的阳极和阴极分别连接有金属板，所述将所述掩膜板连接于电源的阳极和阴极中的一个包括：
    设置所述掩膜板与所述金属板之间具有一预定距离，使得所述气体在所述碱性导电溶液中产生的气泡运动至所述掩膜板时具有的直径，小于或等于所述蒸镀孔的直径。
  12. 根据权利要求11所述的清洗方法，其特征在于，所述电源的阳极和阴极连接有相同材质的金属板，所述金属板的制造材质包括铜。
  13. 根据权利要求6所述的清洗方法，其特征在于，所述接通所述电源之后，且所述碱性导电溶液发生电离反应并生成气体的同时，所述清洗方法进一步包括：
    按照预定间隔逐渐增大所述电源的放电电流，且所述放电电流的取值范围为100安培至1000安培之间。
  14. 一种掩膜板的清洗装置，其特征在于，所述清洗装置包括电源以及盛装于电解池中的碱性导电溶液，其中，所述电源的阳极和阴极中的一个 用于连接所述掩膜板，所述电源的阳极和阴极中的另一个以及所述掩膜板浸没于所述碱性导电溶液中，且在所述电源接通后，所述碱性导电溶液发生电离反应并生成气体，从而通过所述气体将所述掩膜板上的污染物带离所述掩膜板。
  15. 根据权利要求9所述的清洗装置，其特征在于，所述碱性导电溶液包括氢氧化钾溶液和氢氧化钠溶液的任意组合，且所述碱性导电溶液的pH值大于或等于11，所述电源的阴极用于连接所述掩膜板，所述电源的阳极浸没于所述碱性导电溶液中。
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KR102224705B1 (ko) * 2019-03-26 2021-03-08 풍원화학(주) 유기전계발광표시장치용 금속마스크 세정방법 및 이를 이용한 금속마스크
CN112387693A (zh) * 2019-08-19 2021-02-23 深圳市海博源光电科技有限公司 一种掩膜板的清洗方法及清洗装置
CN114273343A (zh) * 2022-01-18 2022-04-05 中国石油大学(华东) 一种原位电致气泡除污方法及应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101271121B1 (ko) * 2011-11-24 2013-06-04 주식회사 케이씨텍 유기발광 표시소자 증착용 마스크의 세정장치
CN103451712A (zh) * 2013-08-11 2013-12-18 唐军 掩模板清洗设备
CN103469152A (zh) * 2013-08-11 2013-12-25 唐军 掩模板清洗***

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251536A (ja) * 1988-03-31 1989-10-06 Toshiba Corp シャドウマスクの製造方法
EP0337342A1 (de) * 1988-04-13 1989-10-18 Siemens Aktiengesellschaft Verfahren zum Entschichten von Photolack
JP4393164B2 (ja) * 2003-12-02 2010-01-06 シャープ株式会社 フォトマスクとその製造方法、および、それを用いた露光方法
US20050167284A1 (en) * 2004-01-30 2005-08-04 International Business Machines Corporation Electrolytic method for photoresist stripping
US20080261120A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with integrally formed protective capping layer
KR20090050736A (ko) * 2007-11-16 2009-05-20 주식회사 하이닉스반도체 포토마스크의 세정 방법
CN101984142A (zh) * 2010-11-23 2011-03-09 浙江大学 用微纳探针电解生成单一尺寸微纳气泡的装置
CN102899609B (zh) * 2012-10-17 2014-08-20 深圳市华星光电技术有限公司 掩膜板、制造有机发光显示面板的蒸镀装置及其方法
CN104157546A (zh) * 2013-05-13 2014-11-19 上海鸿辉光通科技股份有限公司 一种掩膜板的清洗方法
US20150144502A1 (en) * 2013-11-27 2015-05-28 The Arizona Board Of Regents On Behalf Of The University Of Arizona Electrochemically-assisted megasonic cleaning systems and methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101271121B1 (ko) * 2011-11-24 2013-06-04 주식회사 케이씨텍 유기발광 표시소자 증착용 마스크의 세정장치
CN103451712A (zh) * 2013-08-11 2013-12-18 唐军 掩模板清洗设备
CN103469152A (zh) * 2013-08-11 2013-12-25 唐军 掩模板清洗***

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880449A (zh) * 2019-09-30 2020-03-13 王偲偲 一种硅片清洗方法

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