WO2016047685A1 - 被覆工具 - Google Patents
被覆工具 Download PDFInfo
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- WO2016047685A1 WO2016047685A1 PCT/JP2015/076921 JP2015076921W WO2016047685A1 WO 2016047685 A1 WO2016047685 A1 WO 2016047685A1 JP 2015076921 W JP2015076921 W JP 2015076921W WO 2016047685 A1 WO2016047685 A1 WO 2016047685A1
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- aluminum oxide
- oxide layer
- layer
- hkl
- orientation coefficient
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
Definitions
- the present invention relates to a coated tool having a coating layer on the surface of a substrate.
- coating layers such as a titanium carbide layer, a titanium nitride layer, a titanium carbonitride layer, an aluminum oxide layer, and a titanium aluminum nitride layer have been formed in a single layer or multiple layers on the surface of a substrate such as cemented carbide, cermet, or ceramic.
- Coated tools such as cutting tools are known.
- Such a cutting tool has been increasingly used for heavy interrupted cutting in which a large impact is applied to the cutting edge as the efficiency of recent cutting increases. Under such severe cutting conditions, a large impact is applied to the coating layer, and chipping and peeling of the coating layer are likely to occur. Therefore, it is required to improve chipping resistance of the coating layer and suppress chipping and peeling of the coating layer.
- Patent Document 1 As a technique for improving the fracture resistance, in Patent Document 1, the grain size and layer thickness of the aluminum oxide layer are optimized, and the organization coefficient (Texture Coefficient: orientation coefficient) on the (012) plane is set. A technique capable of forming an aluminum oxide layer having a high density and high fracture resistance by setting it to 1.3 or more is disclosed. Further, in Patent Document 2, by setting the organization coefficient in the (012) plane of the aluminum oxide layer to 2.5 or more, the residual stress in the aluminum oxide layer is easily released, and the fracture resistance of the aluminum oxide layer is improved. Techniques that can be improved are disclosed.
- Patent Document 3 as a technique for improving wear resistance in the above cutting tool, an aluminum oxide layer positioned immediately above an intermediate layer is formed by laminating two or more unit layers exhibiting different X-ray diffraction patterns. The technique which can improve the intensity
- Patent Document 4 the (006) plane orientation coefficient of the aluminum oxide layer is increased to 1.8 or more, and the peak intensity ratio I (104) / I (110) between the (104) plane and the (110) plane is a predetermined value.
- a range-controlled cutting tool is disclosed.
- the peak intensity ratio I (104) / I (012) between the (104) plane and the (012) plane of the aluminum oxide layer is set to be higher than that of the first plane below the aluminum oxide layer.
- a cutting tool that is larger in surface is disclosed.
- Japanese Patent No. 6-316758 Japanese Patent Laid-Open No. 2003-025114 Japanese Patent Laid-Open No. 10-204639 JP 2013-132717 A JP 2009-202264 A
- the coated tool of this embodiment includes a base and a coating layer provided on the surface of the base. Having a cutting edge and a flank on the coating layer;
- the coating layer includes at least a portion in which a titanium carbonitride layer and an aluminum oxide layer are sequentially laminated, Based on the peak of the aluminum oxide layer analyzed by X-ray diffraction analysis, when the value represented by the following formula is the orientation coefficient Tc (hkl), An orientation coefficient Tc1 (4_0_10) detected by measurement from the surface side of the aluminum oxide layer on the flank is 0.6 or more.
- Orientation coefficient Tc (hkl) ⁇ I (hkl) / I 0 (hkl) ⁇ / [(1/9) ⁇ ⁇ ⁇ I (HKL) / I 0 (HKL) ⁇ ]
- (HKL) is the crystal plane I (HKL) of (012), (104), (110), (113), (024), (116), (214), (146), (4_0_10).
- I (hkl) are the peak intensities I 0 (HKL) and I 0 (hkl) of the peaks attributed to each crystal plane detected in the X-ray diffraction analysis of the aluminum oxide layer. Standard diffraction intensity of each crystal plane described in 00-010-0173
- the intersecting ridge portion formed by the rake face 2 and the flank face 3 forms a cutting edge 4.
- the tool 1 includes a base 5 and a coating layer 6 provided on the surface of the base 5.
- the coating layer 6 is formed by laminating a base layer 7, a titanium carbonitride layer 8, an intermediate layer 9, an aluminum oxide layer 10, and a surface layer 11 in this order from the substrate 5 side.
- the aluminum oxide layer 10 has an ⁇ -type crystal structure.
- the value represented by the following formula is defined as the orientation coefficient Tc (hkl) at the peak of the aluminum oxide layer 10 by X-ray diffraction analysis.
- Orientation coefficient Tc (hkl) ⁇ I (hkl) / I 0 (hkl) ⁇ / [(1/9) ⁇ ⁇ ⁇ I (HKL) / I 0 (HKL) ⁇ ]
- (HKL) is the crystal plane I (HKL) of (012), (104), (110), (113), (024), (116), (214), (146), (4_0_10).
- I (hkl) are the peak intensities I 0 (HKL) and I 0 (hkl) of the peaks attributed to each crystal plane detected in the X-ray diffraction analysis of the aluminum oxide layer.
- the standard diffraction intensity of each crystal plane described in 00-010-0173, and the orientation coefficient of the surface side peak measured from the surface side of the aluminum oxide layer 10 on the flank 3 is Tc1
- the aluminum oxide layer on the flank 3 is 10 is polished from the surface side of the aluminum oxide layer 10 on the rake face 2, and the orientation coefficient at the substrate side peak detected by measurement in a state where only the substrate side portion of the aluminum oxide layer 10 is left. It is defined as the orientation coefficient Tc3 of the surface side peak to be measured.
- the orientation coefficient Tc1 (4_0_10) is 0.6 or more.
- the wear resistance of the aluminum oxide layer 10 is improved.
- the tool 1 becomes a tool 1 that can be used for a long period of time. That is, when the orientation coefficient Tc (4_0_10) increases, that is, when the ratio of the peak intensity I (4_0_10) of the (4_0_10) plane increases, the toughness of the aluminum oxide particles constituting the aluminum oxide layer 10 increases, and the aluminum oxide layer It is considered that the aluminum oxide crystal constituting the aluminum oxide layer 10 is easily broken against an impact applied from the surface side of the film 10 in the film forming direction (direction perpendicular to the surface), and resistance to destruction is increased.
- Tc1 (4_0_10) the degree of orientation coefficient Tc1 (4_0_10), the minute chipping generated on the surface of the aluminum oxide layer 10 is suppressed, and the progress of wear due to the minute chipping is suppressed. Seems to be able to do.
- a desirable range of Tc1 (4_0_10) is 1.0 to 2.3, and a particularly desirable range is 1.1 to 1.9.
- Tc1 (4_0_10) and Tc2 (4_0_10) are compared, Tc1 (4_0_10) is larger than Tc2 (4_0_10). That is, Tc2 (4_0_10) is smaller than Tc1 (4_0_10).
- Tc1 (4_0_10) increases, the coefficient of thermal expansion in the direction parallel to the surface of the aluminum oxide layer 10 increases, so that the intermediate layer 9 of the substrate-side base layer and the titanium carbonitride layer 8 are more than the aluminum oxide layer 10. There is a tendency that the difference from the coefficient of thermal expansion increases, and the aluminum oxide layer 10 tends to peel off.
- Tc2 (4_0_10) peeling of the aluminum oxide layer 10 can be suppressed by making Tc2 (4_0_10) smaller than Tc1 (4_0_10).
- a desirable range of Tc2 (4_0_10) is 0.3 to 1.5.
- Tc1 (4_0_10) and Tc2 (4_0_10) of the aluminum oxide layer 10 will be described.
- the X-ray diffraction analysis of the aluminum oxide layer 10 is measured using an X-ray diffraction analysis apparatus using a general CuK ⁇ ray.
- the JCPDS card No In obtaining the peak intensity of each crystal plane of the aluminum oxide layer 10 from the X-ray diffraction chart, the JCPDS card No.
- the diffraction angle of each crystal plane described in 00-010-0173 is confirmed, the crystal plane of the detected peak is identified, and the peak intensity is measured.
- the peak detected by the X-ray diffraction analysis is identified using a JCPDS card, the peak position may be shifted due to residual stress or the like existing in the coating layer 6. Therefore, in order to confirm whether or not the detected peak is the peak of the aluminum oxide layer 10, X-ray diffraction analysis is performed in a state where the aluminum oxide layer 10 is polished, and the peak detected before and after polishing is detected. Compare. From this difference, it can be confirmed that the peak is in the aluminum oxide layer 10.
- the surface side peak measured from the surface side of the aluminum oxide layer 10 on the flank 3 is measured. Specifically, the peak intensity of the aluminum oxide layer 10 is measured from the surface side of the aluminum oxide layer 10 to the base 5 side of the aluminum oxide layer 10. More specifically, the X-ray diffraction analysis is performed on the coating layer 6 with the surface layer 11 removed by polishing or without the surface layer 11 being polished. The peak intensity of each peak obtained is measured to calculate the orientation coefficient Tc1 (hkl). When the surface layer 11 is polished and removed, a thickness of 20% or less of the thickness of the aluminum oxide layer 10 may be removed.
- the peak intensity is measured in a state where a part of the aluminum oxide layer 10 on the flank 3 is polished and only the substrate side portion of the aluminum oxide layer 10 is left.
- the aluminum oxide layer 10 of the coating layer 6 is polished to a thickness of 10 to 40% with respect to the thickness of the aluminum oxide layer 10 before polishing. Polishing is performed by brush processing using diamond abrasive grains, processing by an elastic grindstone, or blast processing. Thereafter, the polished portion of the aluminum oxide layer 10 is subjected to X-ray diffraction analysis under the same conditions as those in the surface side portion of the aluminum oxide layer 10, the peak of the aluminum oxide layer 10 is measured, and the orientation coefficient Tc2 ( hkl) is calculated.
- orientation coefficient Tc is an index representing the degree of orientation of each crystal plane because it is determined by the ratio to the non-oriented standard data defined by the JCPDS card. Further, “(hkl)” of Tc (hkl) indicates a crystal plane for calculating the orientation coefficient.
- I (116) and I (104) are the first and second strongest in the surface side peak measured from the surface side of the aluminum oxide layer 10 on the flank 3. . This tends to suppress flank wear caused by minute chipping on the flank 3.
- I (4_0_10) is the peak intensity within the fifteenth, and particularly preferably the eighth to twelfth peak intensity.
- the orientation coefficient Tc3 (4_0_10) is larger than Tc1 (4_0_10).
- orientation coefficient Tc3 (104) is smaller than Tc1 (104).
- the titanium carbonitride layer 8 is a laminate in which a so-called MT (Moderate Temperature) -titanium carbonitride layer 8a and HT-titanium carbonitride layer 8b are present in this order from the substrate side.
- the MT-titanium carbonitride layer 8a is made of columnar crystals containing acetonitrile (CH 3 CN) gas as a raw material and formed at a relatively low film formation temperature of 780 to 900 ° C.
- the HT (High Temperature) -titanium carbonitride layer 8b is made of granular crystals formed at a high film formation temperature of 950 to 1100.degree.
- the surface of the HT-titanium carbonitride layer 8b is formed with triangular projections in a cross-sectional view that tapers toward the aluminum oxide layer 10, thereby increasing the adhesion of the aluminum oxide layer 10. Further, peeling and chipping of the coating layer 6 can be suppressed.
- the intermediate layer 9 is provided on the surface of the HT-titanium carbonitride layer 8b.
- the intermediate layer 9 contains titanium and oxygen, and is made of, for example, TiCO, TiNO, TiCNO, TiAlCO, TiAlCNO, and the like.
- FIG. 2 includes a lower intermediate layer 9a and an upper intermediate layer 9b in which these are stacked.
- the aluminum oxide particles constituting the aluminum oxide layer 10 have an ⁇ -type crystal structure.
- the aluminum oxide layer 10 having an ⁇ -type crystal structure has high hardness, and can improve the wear resistance of the coating layer 6.
- Tc1 (4_0_10) and Tc2 (4_0_10) can be increased.
- the titanium carbonitride layer 8 is provided with a thickness of 6.0 to 13.0 ⁇ m
- the intermediate layer 9 is provided with a thickness of 0.05 to 1.0 ⁇ m.
- the base layer 7 and the surface layer 11 are made of titanium nitride.
- the underlayer 7 and the surface layer 11 may be other materials such as titanium carbonitride, titanium carbonitride, chromium nitride other than titanium nitride, The base layer 7 or the surface layer 11 may not be provided.
- the underlayer 7 is provided with a thickness of 0.1 to 1.0 ⁇ m
- the surface layer 11 is provided with a thickness of 0.1 to 3.0 ⁇ m.
- each layer and the properties of the crystals constituting each layer should be measured by observing an electron microscope photograph (scanning electron microscope (SEM) photograph or transmission electron microscope (TEM) photograph) in the cross section of the tool 1. Is possible.
- the crystal form of the crystals constituting each layer of the coating layer 6 is columnar.
- the average ratio of the average crystal width to the length in the thickness direction of the coating layer 6 of each crystal is 0 on average. .3 or less states.
- the crystal form is defined as granular.
- the base 5 of the tool 1 is a hard material composed of tungsten carbide (WC) and, if desired, at least one selected from the group consisting of carbides, nitrides, and carbonitrides of Group 4, 5, and 6 metals of the periodic table.
- Cemented carbide, Ti-based cermet, or Si 3 N 4 , Al 2 O 3 , diamond, cubic nitridation in which phases are bonded with a binder phase composed of an iron group metal such as cobalt (Co) or nickel (Ni) Ceramics such as boron (cBN) can be used.
- substrate 5 may consist of a cemented carbide or a cermet from the point of a fracture resistance and abrasion resistance. Further, depending on the application, the base 5 may be made of a metal such as carbon steel, high-speed steel, or alloy steel.
- the said cutting tool applies the cutting edge 4 formed in the cross
- the coated tool of the present embodiment can be applied to various uses such as an excavation tool and a blade, and in this case also has excellent mechanical reliability.
- metal powder, carbon powder, etc. are appropriately added to and mixed with inorganic powder such as metal carbide, nitride, carbonitride, oxide, etc. that can form a hard alloy to be the base 5 by firing, press molding, casting
- inorganic powder such as metal carbide, nitride, carbonitride, oxide, etc. that can form a hard alloy to be the base 5 by firing, press molding, casting
- the substrate 5 made of the hard alloy described above is fired in a vacuum or non-oxidizing atmosphere. Make it. Then, the surface of the substrate 5 is subjected to polishing or honing of the cutting edge as desired.
- CVD chemical vapor deposition
- a mixed gas composed of 0.5 to 10% by volume of titanium tetrachloride (TiCl 4 ) gas, 10 to 60% by volume of nitrogen (N 2 ) gas, and the balance of hydrogen (H 2 ) gas is prepared as a reaction gas composition. Then, it is introduced into the chamber, and a TiN layer as the underlayer 7 is formed at a film forming temperature of 800 to 940 ° C. and a pressure in the chamber of 8 to 50 kPa.
- the reaction gas composition is 0.5 to 10% by volume of titanium tetrachloride (TiCl 4 ) gas, 5 to 60% by volume of nitrogen (N 2 ) gas, and 0.1% of acetonitrile (CH 3 CN) gas as the reaction gas composition.
- TiCl 4 titanium tetrachloride
- N 2 nitrogen
- CH 3 CN acetonitrile
- a mixed gas consisting of 1 to 3.0% by volume and the remainder consisting of hydrogen (H 2 ) gas is prepared and introduced into the chamber, the film forming temperature is 780 to 880 ° C., the pressure in the chamber is 5 to 25 kPa, and MT -Deposit a titanium carbonitride layer.
- the average crystal width of the titanium carbonitride columnar crystals constituting the titanium carbonitride layer is more on the surface side than on the substrate side. This can be a larger configuration.
- an HT-titanium carbonitride layer constituting the upper portion of the titanium carbonitride layer 8 is formed.
- the specific film forming conditions of the HT-titanium carbonitride layer are as follows: titanium tetrachloride (TiCl 4 ) gas is 1 to 4% by volume, nitrogen (N 2 ) gas is 5 to 20% by volume, A mixed gas composed of 0.1 to 10% by volume of methane (CH 4 ) gas and the remaining hydrogen (H 2 ) gas is adjusted and introduced into the chamber, the film forming temperature is 900 to 1050 ° C., and the pressure in the chamber The film is formed at 5 to 40 kPa.
- the intermediate layer 9 is produced.
- the specific film formation conditions for this embodiment are 3 to 15% by volume of titanium tetrachloride (TiCl 4 ) gas, 3 to 10% by volume of methane (CH 4 ) gas, and 10 to 10% of nitrogen (N 2 ) gas. 25% by volume, carbon monoxide (CO) gas 0.5-2.0% by volume, aluminum trichloride (AlCl 3 ) gas 0-3.0% by volume, the remainder consisting of hydrogen (H 2 ) gas Adjust the gas. These mixed gases are adjusted and introduced into the chamber to form a film at a film forming temperature of 900 to 1050 ° C. and a pressure in the chamber of 5 to 40 kPa.
- the intermediate layer may be a multilayer of two or more layers.
- the nitrogen (N 2 ) gas may be changed to argon (Ar) gas.
- an aluminum oxide layer 10 is formed.
- nuclei of aluminum oxide crystals are formed. 5 to 10% by volume of aluminum trichloride (AlCl 3 ) gas, 0.1 to 1.0% by volume of hydrogen chloride (HCl) gas, 0.1 to 5.0% by volume of carbon dioxide (CO 2 ) gas, The remaining gas mixture is hydrogen (H 2 ) gas, the film forming temperature is 950 to 1100 ° C., and the pressure in the chamber is 5 to 10 kPa.
- the growth state of the aluminum oxide crystal to be formed is changed, and Tc2 (4_0_10) of the aluminum oxide layer 10 is controlled.
- the second stage and the third stage in the film forming process of the aluminum oxide layer 10 are not independent processes, and the composition of the mixed gas may be continuously changed. At this time, the relationship between Tc1 (4_0_10) and Tc3 (4_0_10) can be adjusted by polishing only the flank.
- TiN layer 11 a surface layer (TiN layer) 11 is formed as desired.
- Specific film forming conditions are as follows: titanium tetrachloride (TiCl 4 ) gas is 0.1 to 10% by volume, nitrogen (N 2 ) gas is 10 to 60% by volume, and the remainder is hydrogen (H 2 ) gas.
- a mixed gas consisting of the above is adjusted and introduced into the chamber, and the film is formed at a film forming temperature of 960 to 1100 ° C. and a pressure in the chamber of 10 to 85 kPa.
- the cutting edge portion on the surface of the formed coating layer 6 is polished.
- the cutting edge portion is processed smoothly, the welding of the work material is suppressed, and the tool is further excellent in fracture resistance.
- a coating layer was formed on the cemented carbide substrate by the chemical vapor deposition (CVD) method under the film formation conditions shown in Table 1.
- CVD chemical vapor deposition
- cutting tools were produced by polishing the flank after forming an aluminum oxide layer.
- Tables 1 and 2 each compound is represented by a chemical symbol.
- the sample was first subjected to X-ray diffraction analysis with CuK ⁇ rays on the rake face without being polished on the coating layer.
- the orientation coefficient Tc3 (hkl) of each crystal plane of (4_0_10) plane, (104) plane, and (116) plane of Al 2 O 3 having an ⁇ -type crystal structure of 00-010-0173 was calculated.
- the surface side peak measured from the surface side of the aluminum oxide layer by performing X-ray diffraction analysis using CuK ⁇ rays without polishing the coating layer (in the table, the surface side or the surface) (Identified as side peak) and the peak intensity of each peak was measured.
- the surface side peak the highest intensity peak and the second highest intensity peak were confirmed, and the orientation coefficients of the crystal planes of the (4_0_10) plane, (104) plane, and (116) plane of the JCPDS card Tc1 (hkl) was calculated.
- the flank is polished until it becomes 10 to 40% of the thickness of the aluminum oxide layer.
- a part of the aluminum oxide layer is polished to leave only the substrate side portion.
- the substrate-side peak (denoted as the substrate side in the table) measured in step 1 and the peak intensity of each peak were measured.
- the flank wear width was smaller and the number of impacts increased.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
前記被覆層上に切刃と逃げ面とを有し、
前記被覆層は、少なくとも炭窒化チタン層と酸化アルミニウム層とを順に積層した部位を含み、
X線回折分析にて分析される前記酸化アルミニウム層のピークを基に、下記式で表される値を配向係数Tc(hkl)としたとき、
前記逃げ面における前記酸化アルミニウム層の表面側からの測定で検出される配向係数Tc1(4_0_10)が0.6以上である。
配向係数Tc(hkl)={I(hkl)/I0(hkl)}/〔(1/9)×Σ{I(HKL)/I0(HKL)}〕
ここで、(HKL)は、(012)、(104)、(110)、(113)、(024)、(116)、(214)、(146)、(4_0_10)の結晶面
I(HKL)およびI(hkl)は、前記酸化アルミニウム層のX線回折分析において検出される各結晶面に帰属されるピークのピーク強度
I0(HKL)およびI0(hkl)は、JCPDSカードNo.00-010-0173に記載された各結晶面の標準回折強度
配向係数Tc(hkl)={I(hkl)/I0(hkl)}/〔(1/9)×Σ{I(HKL)/I0(HKL)}〕
ここで、(HKL)は、(012)、(104)、(110)、(113)、(024)、(116)、(214)、(146)、(4_0_10)の結晶面
I(HKL)およびI(hkl)は、前記酸化アルミニウム層のX線回折分析において検出される各結晶面に帰属されるピークのピーク強度
I0(HKL)およびI0(hkl)は、JCPDSカードNo.00-010-0173に記載された各結晶面の標準回折強度
そして、逃げ面3における酸化アルミニウム層10の表面側から測定される表面側ピークの配向係数をTc1、逃げ面3において、酸化アルミニウム層10の一部を研磨して、酸化アルミニウム層10の基体側部分のみを残した状態での測定で検出される基体側ピークにおける配向係数をTc2、すくい面2における酸化アルミニウム層10の表面側から測定される表面側ピークの配向係数Tc3と定義する。
(連続切削条件)
被削材 :クロムモリブデン鋼材(SCM435)
工具形状:CNMG120408
切削速度:300m/分
送り速度:0.3mm/rev
切り込み:1.5mm
切削時間:25分
その他 :水溶性切削液使用
評価項目:走査型電子顕微鏡にて刃先ホーニング部分を観察し、実際に摩耗している部分において、逃げ面におけるフランク摩耗幅と、すくい面におけるクレータ摩耗幅を測定。
(断続切削条件)
被削材 :クロムモリブデン鋼 4本溝入り鋼材(SCM440)
工具形状:CNMG120408
切削速度:300m/分
送り速度:0.3mm/rev
切り込み:1.5mm
その他 :水溶性切削液使用
評価項目:欠損に至る衝撃回数を測定。
2・・・すくい面
3・・・逃げ面
4・・・切刃
5・・・基体
6・・・被覆層
7・・・下地層
8・・・炭窒化チタン層
8a・・・MT-炭窒化チタン層
8b・・・HT-炭窒化チタン層
9・・・中間層
9a・・・下部中間層
9b・・・上部中間層
10・・酸化アルミニウム層
11・・・表層
Claims (5)
- 基体と、該基体の表面に設けられた被覆層とを備え、
前記被覆層上に切刃と逃げ面とを有し、
前記被覆層は、少なくとも炭窒化チタン層と酸化アルミニウム層とを順に積層した部位を含み、
X線回折分析にて分析される前記酸化アルミニウム層のピークを基に、下記式で表される値を配向係数Tc(hkl)としたとき、
前記逃げ面における前記酸化アルミニウム層の表面側からの測定で検出される配向係数Tc1(4_0_10)が0.6以上である被覆工具。
配向係数Tc(hkl)={I(hkl)/I0(hkl)}/〔(1/9)×Σ{I(HKL)/I0(HKL)}〕
ここで、(HKL)は、(012)、(104)、(110)、(113)、(024)、(116)、(214)、(146)、(4_0_10)の結晶面
I(HKL)およびI(hkl)は、前記酸化アルミニウム層のX線回折分析において検出される各結晶面に帰属されるピークのピーク強度
I0(HKL)およびI0(hkl)は、JCPDSカードNo.00-010-0173に記載された各結晶面の標準回折強度 - 前記逃げ面の前記酸化アルミニウム層の一部を研磨して、前記酸化アルミニウム層の基体側部分のみを残した状態での測定で検出される配向係数Tc2(4_0_10)が、前記Tc1(4_0_10)よりも小さい請求項1に記載の被覆工具。
- 前記逃げ面における前記酸化アルミニウム層の表面側からの測定で検出される前記表面側ピークにおいて、I(116)およびI(104)が一番目と二番目に強い請求項1または2に記載の被覆工具。
- 前記被覆層上にさらにすくい面を有し、該すくい面における前記酸化アルミニウム層の表面側から測定される配向係数Tc3(4_0_10)が、前記逃げ面における前記酸化アルミニウム層の表面側から測定される配向係数Tc1(4_0_10)よりも大きい請求項1乃至3のいずれかに記載の被覆工具。
- 前記すくい面における前記酸化アルミニウム層の表面側から測定される配向係数Tc3(104)が、前記逃げ面における前記酸化アルミニウム層の表面側から測定される配向係数Tc1(104)よりも小さい請求項1乃至4のいずれかに記載の被覆工具。
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US15/511,723 US10370758B2 (en) | 2014-09-24 | 2015-09-24 | Coated tool |
CN201580050008.1A CN106715012B (zh) | 2014-09-24 | 2015-09-24 | 被覆工具 |
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EP3312303A1 (en) * | 2016-10-21 | 2018-04-25 | Tungaloy Corporation | Coated cutting tool |
CN110023011A (zh) * | 2016-10-25 | 2019-07-16 | 株式会社泰珂洛 | 被覆切削工具 |
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JP5898394B1 (ja) | 2014-08-28 | 2016-04-06 | 京セラ株式会社 | 被覆工具 |
JP6210346B1 (ja) | 2016-11-02 | 2017-10-11 | 株式会社タンガロイ | 被覆切削工具 |
JP6519936B1 (ja) | 2018-03-16 | 2019-05-29 | 住友電工ハードメタル株式会社 | 表面被覆切削工具及びその製造方法 |
JP6519935B1 (ja) | 2018-03-16 | 2019-05-29 | 住友電工ハードメタル株式会社 | 表面被覆切削工具及びその製造方法 |
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US10370758B2 (en) | 2019-08-06 |
KR101894310B1 (ko) | 2018-09-04 |
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US20170275751A1 (en) | 2017-09-28 |
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KR20170042323A (ko) | 2017-04-18 |
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