WO2016038269A1 - Procédé de recuit par lampes flash - Google Patents
Procédé de recuit par lampes flash Download PDFInfo
- Publication number
- WO2016038269A1 WO2016038269A1 PCT/FR2015/052238 FR2015052238W WO2016038269A1 WO 2016038269 A1 WO2016038269 A1 WO 2016038269A1 FR 2015052238 W FR2015052238 W FR 2015052238W WO 2016038269 A1 WO2016038269 A1 WO 2016038269A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coating
- annealed
- substrate
- flash lamp
- mask
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000000137 annealing Methods 0.000 title claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 91
- 239000011248 coating agent Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
- C03C2217/251—Al, Cu, Mg or noble metals
- C03C2217/254—Noble metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
- C03C2217/251—Al, Cu, Mg or noble metals
- C03C2217/254—Noble metals
- C03C2217/256—Ag
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a method and apparatus for rapid annealing of thin layers deposited on flat substrates by means of flash lamps.
- Laser annealing is used to heat thin coatings at high temperatures, on the order of several hundred degrees, while preserving the underlying substrate.
- FIG. 1 shows a Planitherm ONE ® coating after annealing with flash lamps under the following conditions: Intensity of each light pulse: 35 J / cm 2
- Periodic streaks about 2.6 cm apart, were observed which were absent from the coating directly after the Planitherme ® ONE stack was deposited.
- This solution consists in interposing between the flash lamp and the coating to anneal an opaque mask having an irradiation slot.
- an opaque mask having an irradiation slot.
- the mask and the irradiation slot must have a fixed position with respect to the flash lamp
- the frequency of the flash lamp and the speed of travel of the substrate shall be such that each point of the coating receives at least one light pulse
- the mask must be positioned as close as possible to the surface of the coating to be annealed, at most within a few millimeters of it,
- the shape and extent of the irradiation slit should be such that the mask intercepts the light of the lamp, that is, obscures the substrate, in all areas where the light intensity is less than an intensity luminous threshold, hereinafter referred to as nominal luminous intensity.
- nominal luminous intensity is the intensity of a light pulse, of a given duration, beyond which a second pulse of intensity greater than or equal to that of the first pulse and of same duration as this, does not cause a change of color in reflection of the coating.
- L ⁇ ai and bi are the coordinates in the CIELab color space of the first color and L 2 , 32 and t> 2 those of the second.
- the second pulse when the second pulse causes a significant color change ( ⁇ * 2 - ⁇ * ⁇ > 1), it is considered that the second pulse affects the color of the coating and that the light intensity is considered to be less than the nominal luminous intensity.
- the light intensities to be considered are of course those measured at the level of the work plane, that is to say at the level of the coating to be annealed.
- the light emitted by the flash lamp has, at the level of the work plane, a light intensity profile, also called a power density profile, at least one zone where the luminous intensity is greater than or equal to the nominal intensity. as defined above, and other zones, generally on the periphery of the irradiated zone, where the luminous intensity is lower than the nominal luminous intensity.
- the irradiation mask must be positioned between the lamp and the coating so as to intercept all of the light which, at the level of the coating to be annealed, has a luminous intensity lower than the nominal intensity.
- the mask may possibly intercept a small portion of the light having an intensity greater than or equal to the nominal intensity.
- the present invention relates to a surface annealing process of a coated substrate, said method comprising
- the distance between the lower face of the mask and the surface of the coating to be annealed is at most equal to 1 mm, preferably at most equal to 500 ⁇ , ideally at most equal to 100 ⁇ ,
- the shape and extent of the slot are such that the mask obscures the coating to be annealed in all areas where the light intensity which, in the absence of a mask, would reach the level of the coating to be annealed is less than a threshold light intensity, hereinafter called the nominal luminous intensity.
- flashlamp designates a single flashlamp or a set of flashlamps, for example 5 to 20 lamps, or 8 to 15 lamps, arranged preferably parallel to each other, and associated with one or more mirrors.
- a set of flash lamps and mirrors is used for example in the method disclosed in WO 2013/026817.
- the function of the mirrors is to direct all the light emitted by the lamps in the direction of the substrate and to give the luminous intensity profile a desired shape in a truncated bell with a central plateau of approximately constant intensity (less than 5%) and lateral flanks where the intensity gradually decreases.
- These mirrors can be flat mirrors or focusing mirrors.
- Flash lamps used in the present invention are generally in the form of sealed glass tubes or quartz tubes filled with a rare gas, provided with electrodes at their ends. Under the effect of a short-term electrical pulse, obtained by discharging a capacitor, the gas ionizes and produces a particularly intense incoherent light.
- the emission spectrum comprises generally at least two emission lines; it is preferably a continuous spectrum having a maximum emission in the near ultraviolet.
- the lamp is preferably a xenon lamp. It can also be a lamp with argon, helium or krypton.
- the emission spectrum preferably comprises several lines, especially at wavelengths ranging from 160 to 1000 nm.
- the duration of the light pulse is preferably in a range from 0.05 to 20 milliseconds, in particular from 0.1 to 5 milliseconds.
- the repetition rate (frequency) is preferably in a range from 0.1 to 5 Hz, in particular from 0.2 to 2 Hz.
- the lamp, or lamps is preferably disposed transversely to the longer sides of the substrate. It has a length preferably of at least 1 m, especially at least 2 m and even at least 3 m, so as to allow the treatment of large substrates.
- the capacitor is typically charged at a voltage of 500 V to 500 kV.
- the current density is preferably at least 4000 A / cm 2 .
- the total energy density emitted by the flash lamps, relative to the surface of the coating, is preferably between 1 and 100 J / cm 2 , preferably between 2 and 30 J / cm 2 , in particular between 5 and 20 J / cm 2 .
- the substrate bearing the coating to be annealed is preferably glass or glass ceramic. It is preferably transparent, colorless (clear or extra-clear glass) or colored, for example blue, gray, green or bronze.
- the glass is preferably of the silico-soda-lime type, but it may also be of borosilicate or alumino-borosilicate type glass.
- the substrate advantageously has at least one dimension greater than or equal to 1 m, or even 2 m and even 3 m.
- the thickness of the substrate generally varies between 0.1 mm and 19 mm, preferably between 0.7 and 9 mm, especially between 1 and 6 mm, or even between 2 and 4 mm.
- the material of the coating to be annealed can in principle be any material, organic or mineral, which is not destroyed by the superficial annealing treatment whose physical properties, and in particular the color, are modified following this treatment.
- the coating to be annealed preferably comprises at least one layer of a transparent conductive oxide (TCO).
- TCO transparent conductive oxide
- This oxide is preferably chosen from indium tin oxide (ITO), indium zinc oxide (IZO) and antimony or fluorine doped tin oxide (ATO). and FTO), zinc oxide doped with aluminum (AZO) and / or gallium (GZO) and / or titanium, titanium oxide doped with niobium and / or tantalum, cadmium stannate or of zinc.
- a particularly preferred oxide is tin and indium oxide, frequently referred to as "ITO".
- the atomic percentage of Sn is preferably in a range from 5 to 70%, especially from 6 to 60%, advantageously from 8 to 12%.
- ⁇ is appreciated for its high electrical conductivity, allowing the use of small thicknesses to obtain a good emissivity or resistivity level.
- the coating to be annealed comprises one or more thin layers of a metal, in particular of a noble metal, typically layers based on silver or gold, preferably at least one layer of metal. 'money.
- the physical thickness of the coating to be annealed is advantageously at least equal to 30 nm and at most equal to 5000 nm, preferably between 50 nm and 2000 nm.
- the substrate carrying the annealing coating under or before the flashlamps partially obscured by the irradiation mask is rotated.
- the flash lamps are preferably close to the coating to be annealed, advantageously located less than 20 cm, preferably less than 10 cm and in particular less than 5 cm.
- This distance the higher the luminous intensity at the level of the work surface (coating to anneal) is important for a given operating power.
- the irradiation mask comprises a slot whose longitudinal axis is perpendicular to the direction of travel of the substrate.
- the simplest form of the slot guaranteeing a homogeneous irradiation of the coating to be annealed is the rectangle.
- the slot therefore preferably has a substantially rectangular shape. More complex shapes, less preferred, are however also possible and the invention is not limited to the embodiment where the slot is a rectangle.
- An arc-like, zigzag or wavy slot would be equivalent to a rectangular slot provided that the upstream and downstream edges of the slot are parallel, allowing for the perfect juxtaposition (without vacuum) of the corresponding irradiation zones. successive light pulses.
- the substrate carrying the coating to be annealed can be set in scrolling motion using any suitable mechanical conveyor means, for example using strips, rollers, translational trays.
- the conveyor system controls and controls the speed of travel.
- the rate of travel of the substrate should be adjusted according to the frequency of the pulses and the slit width of the mask so that each point of the coating receives at least one light pulse, ie the scroll speed must be lower or equal to the L / P ratio of the width of the slot (L) to the period (P) separating two pulses.
- the running speed of the substrate For an irradiation frequency of 1 Hz and a width of the slot of 10 cm, the running speed of the substrate must thus be at most 10 cm / second.
- the running speed of the substrate is less than L / P, a certain number of points receive two light pulses (overlap area), which is not very favorable from the point of view of the energy efficiency of the process.
- overlap area The existence of a zone of recovery, relatively narrow, however ensures the continuity of the irradiated area in case of small changes in the speed of travel.
- the frequency of the flashlamp, the width of the slot and the speed of travel of the substrate are such that at least 90%, preferably at least 95%, more preferably at least 98% of the points of the coating to be annealed receive a single light pulse. In other words, at most 10%, preferably at most 5%, and more preferably at most 2% of the points of the coating receive two light pulses.
- the speed of travel of the substrate is therefore preferably between L / P and 0.9 L / P.
- the rate of travel of the substrate carrying the coating to be annealed is advantageously between 0.1 and 30 m / minute, preferably between 1 and 20 m / minute, and in particular between 2 and 10 m / minute.
- the width of the irradiation slot is advantageously between 1 and 50 cm, preferably between 5 and 20 cm.
- the length of the slot is substantially equal to the width of the coating to be annealed, namely generally at least 1 m, preferably at least 2 m, in particular at least 3 m.
- the irradiation mask must be as close as possible to the coating to be annealed, that is to say the distance between its underside and the surface of the coating to be annealed must not exceed 1 mm, preferably does not exceed 500 ⁇ , and ideally is at most equal to 100 ⁇ .
- the present invention also relates to an apparatus for the surface annealing of a substrate bearing a coating to be annealed, particularly suitable for the implementation of the method of the present application.
- the apparatus of the present invention comprises
- a mask located, in a fixed position relative to the flash lamp, between the flash lamp and the transport means, said mask comprising a slot whose longitudinal axis is perpendicular to the direction of travel of the substrate and which is positioned from whereby the light emitted by the flash lamp is projected through the slot towards the flat substrate carrying a coating to be annealed,
- the mask will preferably be made of a metallic material, typically aluminum or copper.
- the body of the mask will preferably be in contact with a cooling circuit, so as to maintain its temperature below 100 ° C., preferably below 50 ° C.
- a diffusing reflective layer for the mask, so that the intercepted light is not absorbed but diffused in order to lower the reflected light intensity and thus its dangerousness.
- the thickness of the mask at the edges of the slot must be as small as possible, preferably less than 500 ⁇ , or even less than 200 ⁇ or less than ⁇ ⁇ .
- the parts thereof that are farthest from the slot may be thicker.
- the edges of the slot can then be made bevel, so that the light is intercepted by the thinnest part.
- Figure 1 shows a photograph of a substrate bearing a Planitherme ® ONE coating irradiated under the conditions as indicated above in the absence of a mask. There are periodic horizontal streaks spaced about 2.6 cm apart.
- Figure 2 is a photograph of a Planitherme ® ONE substrate treated according to the method of the invention. The streaks visible in FIG. 1 have completely disappeared thanks to the interposition of a mask under the conditions according to the invention.
- FIG. 3 is an explanatory diagram showing the operation of the method of the present invention and, more particularly, the appropriate positioning of the irradiation mask in relation to the luminous intensity profile of the lamps.
- the annealing coating 2 is irradiated with light emitted by a set of lamps 4 and directed downwards by means of a set of mirrors 5, through a mask 3.
- the distance between the two parts of the mask 3 corresponds to the width of the longitudinal slot.
- the distance between the lower face of the mask 3 and the upper face of the annealing coating 2 is less than 1 mm.
- the intensity profile of a light pulse as it exists at the level of the coating to be annealed 2 in the absence of the mask 3.
- the mask 3 is positioned such that the light having a intensity below the nominal intensity is intercepted by the opaque areas of the mask.
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Abstract
Description
Claims
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15767209.8A EP3192095A1 (fr) | 2014-09-11 | 2015-08-20 | Procédé de recuit par lampes flash |
MX2017002996A MX2017002996A (es) | 2014-09-11 | 2015-08-20 | Método de fijacion termica utilizando lamparas de destello. |
CN201580048670.3A CN106605290A (zh) | 2014-09-11 | 2015-08-20 | 使用闪光灯的退火方法 |
BR112017002958A BR112017002958A2 (pt) | 2014-09-11 | 2015-08-20 | processo de recozimento por lâmpadas flash |
JP2017513808A JP2017536689A (ja) | 2014-09-11 | 2015-08-20 | フラッシュランプを使用するアニーリング方法 |
CA2957845A CA2957845A1 (fr) | 2014-09-11 | 2015-08-20 | Procede de recuit par lampes flash |
EA201790593A EA201790593A1 (ru) | 2014-09-11 | 2015-08-20 | Способ отжига при помощи ламп-вспышек |
AU2015314079A AU2015314079A1 (en) | 2014-09-11 | 2015-08-20 | Annealing method using flash lamps |
KR1020177006735A KR20170051447A (ko) | 2014-09-11 | 2015-08-20 | 플래시 램프를 이용한 어닐링 방법 |
US15/507,883 US20170291848A1 (en) | 2014-09-11 | 2015-08-20 | Annealing method using flash lamps |
CONC2017/0002325A CO2017002325A2 (es) | 2014-09-11 | 2017-03-09 | Procedimiento de recocción por lámparas flash |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1458520 | 2014-09-11 | ||
FR1458520A FR3025936B1 (fr) | 2014-09-11 | 2014-09-11 | Procede de recuit par lampes flash |
Publications (1)
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WO2016038269A1 true WO2016038269A1 (fr) | 2016-03-17 |
Family
ID=51866184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/FR2015/052238 WO2016038269A1 (fr) | 2014-09-11 | 2015-08-20 | Procédé de recuit par lampes flash |
Country Status (14)
Country | Link |
---|---|
US (1) | US20170291848A1 (fr) |
EP (1) | EP3192095A1 (fr) |
JP (1) | JP2017536689A (fr) |
KR (1) | KR20170051447A (fr) |
CN (1) | CN106605290A (fr) |
AU (1) | AU2015314079A1 (fr) |
BR (1) | BR112017002958A2 (fr) |
CA (1) | CA2957845A1 (fr) |
CO (1) | CO2017002325A2 (fr) |
EA (1) | EA201790593A1 (fr) |
FR (1) | FR3025936B1 (fr) |
MX (1) | MX2017002996A (fr) |
TW (1) | TWI663637B (fr) |
WO (1) | WO2016038269A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200039709A (ko) * | 2017-08-04 | 2020-04-16 | 비트로 플랫 글래스 엘엘씨 | 은 코팅의 플래쉬-어닐링 |
CN111149230A (zh) * | 2017-08-04 | 2020-05-12 | 维特罗平板玻璃有限责任公司 | 透明导电氧化物和半导体涂层的闪光退火 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3042492B1 (fr) * | 2015-10-16 | 2018-01-19 | Saint-Gobain Glass France | Procede de recuit rapide d'un empilement de couches minces contenant une surcouche a base d'indium |
KR102118365B1 (ko) | 2017-04-21 | 2020-06-04 | 주식회사 엘지화학 | 유기전자소자 봉지용 조성물 |
US11384425B2 (en) * | 2017-07-13 | 2022-07-12 | Purdue Research Foundation | Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom |
DE102019134818A1 (de) * | 2019-02-16 | 2020-08-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zum Erhöhen der Festigkeit eines Glassubstrates |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997045827A1 (fr) * | 1996-05-28 | 1997-12-04 | The Trustees Of Columbia University In The City Of New York | Procede de cristallisation de regions d'une couche de semi-conducteur sur un substrat, et dispositifs realises selon ce procede |
WO2001018854A1 (fr) * | 1999-09-03 | 2001-03-15 | The Trustees Of Columbia University In The City Of New York | Procedes de production de semi-conducteurs a couches minces polycristallins a gros grains uniformes et a emplacements de joints de grains diriges par utilisation de solidification laterale sequentielle |
CN101041209A (zh) * | 2002-08-30 | 2007-09-26 | 住友重机械工业株式会社 | 激光加工方法及加工装置 |
WO2008096089A2 (fr) | 2007-01-05 | 2008-08-14 | Saint-Gobain Glass France | Procede de depot de couche mince et produit obtenu |
US20080299496A1 (en) * | 2007-06-01 | 2008-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus and Manufacturing Method of Light-Emitting Device |
WO2013026817A1 (fr) | 2011-08-19 | 2013-02-28 | Von Ardenne Anlagentechnik Gmbh | Procédé et dispositif de production d'un système de couches à faible émissivité |
WO2013156721A1 (fr) | 2012-04-17 | 2013-10-24 | Saint-Gobain Glass France | Procede d'obtention d'un substrat revetu |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100906964B1 (ko) * | 2002-09-25 | 2009-07-08 | 삼성전자주식회사 | 유기 전계발광 구동 소자와 이를 갖는 유기 전계발광 표시패널 |
JP2004303792A (ja) * | 2003-03-28 | 2004-10-28 | Seiko Epson Corp | フラッシュランプの照射装置 |
KR101500929B1 (ko) * | 2004-11-24 | 2015-03-11 | 엔씨씨 나노, 엘엘씨 | 나노 물질 합성물의 전기적, 도금적, 및 촉매적 이용 |
JP5209237B2 (ja) * | 2007-06-19 | 2013-06-12 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US8569155B2 (en) * | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
JP5640890B2 (ja) * | 2011-05-23 | 2014-12-17 | ウシオ電機株式会社 | 光照射装置および光照射方法 |
JP2014027252A (ja) * | 2012-06-19 | 2014-02-06 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2014011256A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
-
2014
- 2014-09-11 FR FR1458520A patent/FR3025936B1/fr not_active Expired - Fee Related
-
2015
- 2015-08-17 TW TW104126704A patent/TWI663637B/zh not_active IP Right Cessation
- 2015-08-20 EP EP15767209.8A patent/EP3192095A1/fr not_active Withdrawn
- 2015-08-20 WO PCT/FR2015/052238 patent/WO2016038269A1/fr active Application Filing
- 2015-08-20 CA CA2957845A patent/CA2957845A1/fr not_active Abandoned
- 2015-08-20 KR KR1020177006735A patent/KR20170051447A/ko unknown
- 2015-08-20 BR BR112017002958A patent/BR112017002958A2/pt not_active Application Discontinuation
- 2015-08-20 AU AU2015314079A patent/AU2015314079A1/en not_active Abandoned
- 2015-08-20 MX MX2017002996A patent/MX2017002996A/es unknown
- 2015-08-20 CN CN201580048670.3A patent/CN106605290A/zh active Pending
- 2015-08-20 JP JP2017513808A patent/JP2017536689A/ja not_active Ceased
- 2015-08-20 EA EA201790593A patent/EA201790593A1/ru unknown
- 2015-08-20 US US15/507,883 patent/US20170291848A1/en not_active Abandoned
-
2017
- 2017-03-09 CO CONC2017/0002325A patent/CO2017002325A2/es unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997045827A1 (fr) * | 1996-05-28 | 1997-12-04 | The Trustees Of Columbia University In The City Of New York | Procede de cristallisation de regions d'une couche de semi-conducteur sur un substrat, et dispositifs realises selon ce procede |
WO2001018854A1 (fr) * | 1999-09-03 | 2001-03-15 | The Trustees Of Columbia University In The City Of New York | Procedes de production de semi-conducteurs a couches minces polycristallins a gros grains uniformes et a emplacements de joints de grains diriges par utilisation de solidification laterale sequentielle |
CN101041209A (zh) * | 2002-08-30 | 2007-09-26 | 住友重机械工业株式会社 | 激光加工方法及加工装置 |
WO2008096089A2 (fr) | 2007-01-05 | 2008-08-14 | Saint-Gobain Glass France | Procede de depot de couche mince et produit obtenu |
US20080299496A1 (en) * | 2007-06-01 | 2008-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus and Manufacturing Method of Light-Emitting Device |
WO2013026817A1 (fr) | 2011-08-19 | 2013-02-28 | Von Ardenne Anlagentechnik Gmbh | Procédé et dispositif de production d'un système de couches à faible émissivité |
WO2013156721A1 (fr) | 2012-04-17 | 2013-10-24 | Saint-Gobain Glass France | Procede d'obtention d'un substrat revetu |
Non-Patent Citations (1)
Title |
---|
SATO TAKESHI ET AL: "High throughput ELA process with a long proximity stripe phase shift mask", IDW, AMDP - 35L (LATE-NEWS PAPER), LONDON UK, 1 January 2004 (2004-01-01), pages 503 - 504, XP007013750 * |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20200039709A (ko) * | 2017-08-04 | 2020-04-16 | 비트로 플랫 글래스 엘엘씨 | 은 코팅의 플래쉬-어닐링 |
CN111149230A (zh) * | 2017-08-04 | 2020-05-12 | 维特罗平板玻璃有限责任公司 | 透明导电氧化物和半导体涂层的闪光退火 |
JP2020529387A (ja) * | 2017-08-04 | 2020-10-08 | ビトロ フラット グラス エルエルシー | 透明導電性酸化物及び半導体被覆のフラッシュ・アニーリング |
JP2020529384A (ja) * | 2017-08-04 | 2020-10-08 | ビトロ フラット グラス エルエルシー | 銀コーティングのフラッシュアニール |
US11220455B2 (en) | 2017-08-04 | 2022-01-11 | Vitro Flat Glass Llc | Flash annealing of silver coatings |
JP7187535B2 (ja) | 2017-08-04 | 2022-12-12 | ビトロ フラット グラス エルエルシー | 透明導電性酸化物及び半導体被覆のフラッシュ・アニーリング |
JP7221933B2 (ja) | 2017-08-04 | 2023-02-14 | ビトロ フラット グラス エルエルシー | 銀コーティングのフラッシュアニール |
CN111149230B (zh) * | 2017-08-04 | 2023-09-19 | 维特罗平板玻璃有限责任公司 | 透明导电氧化物和半导体涂层的闪光退火 |
KR102638081B1 (ko) * | 2017-08-04 | 2024-02-19 | 비트로 플랫 글래스 엘엘씨 | 은 코팅의 플래쉬-어닐링 |
Also Published As
Publication number | Publication date |
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CN106605290A (zh) | 2017-04-26 |
CA2957845A1 (fr) | 2016-03-17 |
BR112017002958A2 (pt) | 2017-12-05 |
JP2017536689A (ja) | 2017-12-07 |
EP3192095A1 (fr) | 2017-07-19 |
FR3025936B1 (fr) | 2016-12-02 |
FR3025936A1 (fr) | 2016-03-18 |
MX2017002996A (es) | 2017-06-19 |
US20170291848A1 (en) | 2017-10-12 |
EA201790593A1 (ru) | 2017-06-30 |
TW201616555A (zh) | 2016-05-01 |
TWI663637B (zh) | 2019-06-21 |
KR20170051447A (ko) | 2017-05-11 |
AU2015314079A1 (en) | 2017-04-13 |
CO2017002325A2 (es) | 2017-06-20 |
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