WO2016021645A1 - 放熱部品及びその製造方法 - Google Patents
放熱部品及びその製造方法 Download PDFInfo
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- WO2016021645A1 WO2016021645A1 PCT/JP2015/072247 JP2015072247W WO2016021645A1 WO 2016021645 A1 WO2016021645 A1 WO 2016021645A1 JP 2015072247 W JP2015072247 W JP 2015072247W WO 2016021645 A1 WO2016021645 A1 WO 2016021645A1
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- Prior art keywords
- warpage
- heat dissipation
- manufacturing
- amount
- heat
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 13
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- 238000003825 pressing Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005304 joining Methods 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a heat dissipation component and a method for manufacturing the same.
- a base plate is bonded to the circuit board on which the semiconductor element is mounted, and a heat radiating component such as a heat radiating fin is bonded to the opposite surface of the base plate.
- a base plate for such applications a composite made of aluminum or aluminum alloy and silicon carbide having high thermal conductivity and a thermal expansion coefficient close to that of a circuit board to be joined is used (Patent Document 1).
- Patent Document 2 As a means for solving this problem, there is a warping technique in which the plate surface of the base plate to be joined to the heat radiating fin or the like is warped in advance to a convex shape.
- the conventional warping process has a problem that the warpage of the base plate fluctuates under an environment such as a heat cycle after mounting.
- the method of applying warp by applying heat treatment while applying stress to the base plate after packaging of the ceramic substrate and the base plate, such as solder bonding and resin sealing, on the side to be in close contact with the intended heat radiation fin
- the surface has a concave warp shape instead of a convex shape, so that the so-called warpage returns greatly, and as a result, the heat dissipation is inferior.
- a method for manufacturing a heat radiating component that has a small return of warpage after joining circuit boards and is excellent in heat dissipation, and a heat radiating component manufactured by the manufacturing method.
- a method of manufacturing a flat plate-shaped heat dissipation component having a warpage including a composite portion made of silicon carbide and an aluminum alloy, having a surface temperature of 450 ° C. or more and having a curvature radius of 7000 mm to 30000 mm.
- a heat dissipating part is sandwiched between a pair of concave and convex molds having opposing spherical surfaces, and the heat dissipating part is pressed at a stress of 10 KPa or more for 30 seconds or more so that the temperature of the heat dissipating part is 450 ° C. or higher.
- a manufacturing method is provided.
- the curvature radius is 20000 mm to 30000 mm.
- the heat dissipating part manufactured by the above-described manufacturing method has X as the amount of warpage per 10 cm before warpage, and (X + Y) as the amount of warpage per 10 cm after warpage. (YZ) ⁇ (Y / 2) between Y and Z, where (X + Z) is the amount of warpage per 10 cm after heat-treating the heat-dissipating part at 320 ° C. or lower for 1 hour or longer. It is characterized by satisfying the following relationship.
- (YZ) is 18 ⁇ m or less.
- (Y / 2)-(YZ) is 1 ⁇ m to 80 ⁇ m.
- a heat dissipating part manufactured by any one of the above manufacturing methods is provided.
- the present invention it is possible to provide a method for manufacturing a heat radiating component that is less likely to return warp after joining circuit boards and has excellent heat dissipation, and a heat radiating component manufactured by the manufacturing method.
- FIG.2 (a) is the state before a press
- FIG.2 (b) is the state at the time of a press
- FIG.2 (c) is FIG. The state after pressing is shown.
- the “warp amount” is the center point of the flat plate-shaped heat radiation component (the central portion of the heat radiation component may be an intersection of diagonal lines on the plate surface of the substantially rectangular flat plate). Assuming a straight line connecting the end points of the long side direction or short side direction of the plate surface of the heat radiating component, the length of the vertical line passing through the center portion of the straight line of this straight line is planned, and this is the amount of warpage. Define. For example, in the example of FIG. 1, the central portion O of the heat dissipation component is a middle point, and P1 and P2 are end points of line segments in the long side direction or the short side direction.
- the length of the straight line connecting P1 and P2 is M
- the value of the length L with respect to the length M is the amount of warpage.
- the converted value of the length L is the amount of warpage per 10 cm.
- the “spherical surface” can be defined as a curved surface formed when a curved line on a plane is rotated around a straight line on the plane.
- the method for manufacturing a heat dissipation component of the present embodiment is a method for manufacturing a flat plate-shaped heat dissipation component having a warp including a composite portion made of silicon carbide and an aluminum alloy, and has a surface temperature of 450 ° C. or higher.
- the heat dissipation component is sandwiched between concave and convex molds having a pair of opposing spherical surfaces with a radius of 7000 mm to 30000 mm, and pressed at a stress of 10 KPa or more for 30 seconds or more so that the temperature of the heat dissipation component becomes 450 ° C or higher.
- the manufacturing method having the above-described configuration provides a heat dissipating component that has low heat return and good adhesion when in contact with another heat dissipating component such as a heat dissipating fin. As a result, a highly reliable module can be stably obtained with high productivity by mounting a semiconductor element or the like.
- a concave mold having a spherical shape with a radius of curvature of 7000 mm to 30000 mm and a convex mold having a spherical shape with the same radius of curvature as the spherical surface are used.
- Two molds hereinafter, this pair of molds is referred to as an uneven mold
- a method is adopted in which a base plate is sandwiched between the spherical surfaces of the concave and convex molds, and heating is performed while applying stress (so-called pressing) in the direction in which the base plate is sandwiched.
- a pair of molds with a base plate sandwiched in advance is heated, and the base plate is put into a pair of molds that are pre-heated to a method of pressing with a press machine, a method of applying a load, or a predetermined temperature.
- a pressing method, a method in which the base plate is heated in advance, and the like are employed.
- the press die is as shown in FIG. 2, and has a press convex die 2 and a press concave die 3 sandwiching the heat dissipating component 1 (FIG. 2 (a)).
- a pair of press convex mold 2 and press concave mold 3 are opposed to each other to sandwich the heat dissipating component 1 (FIG. 2B), and heat pressing is performed under the above conditions, thereby giving a predetermined warp to the heat dissipating component 1 ( FIG. 2 (c)).
- the heat radiating component 1 may be given a warp amount of 5 ⁇ m to 200 ⁇ m per 10 cm in the longitudinal direction and the short direction of the plate surface of the heat radiating component 1.
- heat dissipation components When joining circuit boards, due to the difference in coefficient of thermal expansion, heat dissipation components generally have a force that causes the convex surface to go to the concave surface, and depending on the shape of the heat dissipation components, a part of the concave shape is likely to occur.
- a spherical warp even if the above-mentioned force is applied, it does not deform until a part of the region becomes concave, so that when a module is formed, the joining of the radiation fins and the like is sufficiently maintained. A highly reliable module can be obtained.
- the base plate is as high as possible at a temperature within a range in which the aluminum or aluminum alloy part serving as the matrix does not melt when applying warpage. Specifically, it is preferable to perform the treatment in a temperature range of about 450 ° C. to 550 ° C.
- the stress is preferably 10 KPa or more, and preferably 30 KPa or more and 250 KPa or less.
- the optimum stress may be determined experimentally according to the thickness of the base plate, the temperature at the time of warping, and the like.
- the heat dissipating component is heated by being sandwiched between heated spherical surfaces. Therefore, in order for the composite itself to reach a temperature of 450 ° C. or more, it is affected by the thickness, area, etc. of the composite, but the temperature of the heat dissipation component itself is substantially 30 seconds or more and 300 seconds or less at a temperature of 450 ° C. or more. If pressed, a heat radiating component having the characteristics of the present embodiment can be obtained.
- the press surface of the pair of press dies for pressing the heat radiation component may have a spherical shape with a radius of curvature of 20000 mm to 30000 mm.
- a change in the amount of warp due to heat treatment can be reduced.
- the amount of warpage per 10 cm before warpage is X
- the amount of warpage per 10 cm after warpage is (X + Y)
- the heat dissipation component after warpage is heated at a temperature of 320 ° C. or less for 1 hour or more.
- the amount of warpage per 10 cm after processing is (X + Z)
- the relationship of (Y ⁇ Z) ⁇ (Y / 2) may be satisfied between Y and Z.
- the amount of warpage per 10 cm before application is X ⁇ m and the amount of warpage per 10 cm after application is (X + Y) ⁇ m
- the amount of warpage per 10 cm applied is Y ⁇ m.
- the warp amount per 10 cm was (X + Y) ⁇ m and heat-treated at a temperature of 320 ° C. or lower for 1 hour or longer, and the warp amount per 10 cm was (X + Z) ⁇ m. Is defined as (YZ) ⁇ m.
- a heat dissipation component with less return of warpage and better heat dissipation is provided. can do.
- the warpage amount before and after the heat treatment at the above temperature for 1 hour or more as described above, it is possible to maintain 50% or more of the applied warpage amount.
- the heat radiation fin fixing side of the heat radiation component is maintained in a convex state, and a module having excellent heat radiation can be obtained.
- (YZ) may be 18 ⁇ m or less.
- the shape of the heat dissipation component is kept uniform, and the heat dissipation component can be manufactured with high productivity.
- (Y / 2)-(YZ) may be in the range of 1 ⁇ m to 80 ⁇ m. By setting it as such a range, heat dissipation components with better adhesiveness and heat dissipation can be manufactured.
- a return part of the warp after heating is small, and a heat dissipating component having a warp having a shape close to a spherical surface can be obtained.
- a composite in which both aluminum, aluminum alloy, and silicon carbide have a three-dimensional network structure can be preferably applied.
- a composite body obtained by impregnating aluminum with an aluminum or an alloy containing aluminum is more preferred because it has a high thermal conductivity and a low expansion coefficient.
- a high-pressure forging method can be used.
- the high-pressure forging method the occurrence of abnormalities such as cracks in the process of impregnating aluminum or aluminum alloy (hereinafter simply referred to as aluminum) described later is prevented, and the resulting composite has high thermal conductivity, low expansion coefficient, and high strength.
- silicon carbide can be formed into a molded body (preform) in advance and impregnated with aluminum.
- a mixed powder in which a silicon carbide powder, an organic binder, and an inorganic binder are mixed to maintain strength after firing is press-molded and then fired in air or in an inert atmosphere.
- a known method such as an injection method for firing, or a wet pressure molding method in which a slurry is filled in a mold having a predetermined water-absorbing property and pressure-molded can be employed.
- the silicon carbide content can be appropriately selected according to the application, but it has a high thermal conductivity and an aluminum-silicon carbide base having a thermal expansion coefficient of about 6 to 9 ppm / K.
- the relative density of the preform is 50% or more, more preferably 60% or more, regardless of which method is used to prepare the preform. For this purpose, it is effective to appropriately mix two or more kinds of raw material powders having different particle sizes as the silicon carbide raw material.
- the relative density can be measured by Archimedes method or the like.
- the molten aluminum is put into the mold, and the molten aluminum is pressed into the voids of the preform.
- Aluminum is impregnated and an aluminum-silicon carbide composite is produced through cooling.
- the preform is pre-heated in advance for smooth impregnation.
- the aluminum material to be impregnated includes an aluminum-silicon alloy containing 6 to 18% by mass of silicon and a preform for the purpose of lowering the melting temperature, ease of impregnation, and improving mechanical properties after impregnation.
- an aluminum-silicon-magnesium alloy to which magnesium is added up to 3% by mass is used.
- the aluminum-silicon carbide composite produced by the above-described method is processed as it is or after that its surface and outer periphery are processed into a predetermined shape, and further subjected to surface treatment such as plating, so that Become.
- the heat dissipating part obtained by the above steps is flat or has uncontrolled warping, but by the method of the present embodiment, the heat dissipating part whose spherical warping amount is controlled is obtained. .
- the heat radiating component manufacturing method of the above embodiment provides a heat radiating component having high adhesion to the heat radiating fins even after packaging such as solder bonding with a ceramic circuit board or resin sealing.
- Example 1 A preform having a relative density of 65%, made of silicon carbide, having a dimension of 179 mm ⁇ 129 mm and a thickness of 4.9 mm, and a cavity having a dimension of 182 mm ⁇ 132 mm and a depth of 5.0 mm Set in the mold. After heating this at 600 ° C. for 1 hour, immediately after pouring a molten aluminum alloy containing 12% by mass of silicon and 0.9% by mass of magnesium and performing high-pressure pressing, aluminum was introduced into the voids in the preform. The alloy was impregnated. After cooling, the mold was removed from the mold to obtain an aluminum-silicon carbide composite.
- a base plate having a size of 180 mm (referred to as the long side) ⁇ 130 mm (referred to as the short side) and a thickness of 5 mm was obtained.
- the surface at this time was covered with an aluminum alloy.
- the warpage amount of the base plate was measured.
- the amount of warpage was measured with a laser three-dimensional shape measuring instrument (manufactured by Keyence Co., Ltd .: LK-G500), and the measurement range was 100 mm in the longitudinal direction and 100 mm in the short direction so that the center of the base plate was the middle point. .
- the measurement position was a line passing through the center of the base plate in both the long and short directions.
- the warp shape was shown in which one side was convex in both the longitudinal direction and the lateral direction, and the opposite surface was concave. With respect to this convex surface, when the maximum height in the line when the both ends of the measurement range were converted to zero, that is, the amount of warpage, was examined, it was 16 ⁇ m in the longitudinal direction and 14 ⁇ m in the lateral direction.
- a concavo-convex mold made of SUS and provided with a spherical surface having a curvature radius of 10,000 mm was prepared.
- This concavo-convex mold was mounted on a hot press and heated to bring the mold surface temperature to 460 ° C.
- the base plate was placed between the concave and convex molds and pressed at 40 KPa. At this time, the temperature was measured by bringing a thermocouple into contact with the side surface of the base plate. After maintaining the temperature of the base plate at 450 ° C. for 3 minutes, the base plate was rapidly cooled to release the pressure.
- the longitudinal direction was 135 ⁇ m and the lateral direction was 122 ⁇ m.
- the base plate was further heated at 320 ° C. for 2 hours, and the amount of warpage was measured. As a result, the longitudinal direction was 122 ⁇ m and the lateral direction was 111 ⁇ m. These results are shown in Tables 1 and 2.
- Example 2 The base plate was treated in the same manner as in Example 1 except that a mold having a radius of curvature of 7000 mm was used. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 3 The base plate was processed in the same manner as in Example 1 except that a mold having a radius of curvature of 20000 mm was used. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 4 The base plate was processed in the same manner as in Example 1 except that a mold having a curvature radius of 30000 mm was used. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 1 is the same as Example 1 except that the mold surface temperature was set to 560 ° C., the press pressure was set to 10 KPa, and the base plate temperature was held for 0.5 minutes (30 seconds) from 550 ° C. The base plate was processed in the same way. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 6 Except that the surface temperature of the mold was set to 530 ° C., the press pressure was set to 30 KPa, and the temperature of the base plate was kept for 4 minutes from the time when the temperature of the base plate reached 520 ° C., the base plate was all processed in the same manner as in Example 1. Processed. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 7 Using a mold with a radius of curvature of 15000 mm, setting the mold surface temperature to 560 ° C., setting the press pressure to 10 KPa, holding 0.5 minutes from the time when the temperature of the base plate reached 550 ° C., Further, the base plate was treated in the same manner as in Example 1 except that the heat treatment after warping was set at 270 ° C. for 3 hours. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 8 All examples except that a mold having a radius of curvature of 15000 mm was used, that the press pressure was 40 KPa, that the holding time was 4 minutes, and that the heat treatment after warping was 270 ° C. for 3 hours.
- the base plate was treated in the same way as 2.
- the amount of warpage at each stage is shown in Tables 1 and 2.
- Example 9 The use of a mold with a radius of curvature of 15000 mm, a mold surface temperature of 530 ° C., a press pressure of 30 KPa, a base plate temperature maintained at 520 ° C. for 3 minutes, and further warping The base plate was treated in the same manner as in Example 3 except that the heat treatment after the application was performed at 270 ° C. for 3 hours. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 3 All the same as Example 4 except that the mold temperature was set to 530 ° C., the base plate temperature was set to 520 ° C., the press pressure was set to 30 KPa, and the holding time was set to 0.25 minutes (15 seconds).
- the base plate was processed by the method. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 5 The base plate was processed in the same manner as in Example 1 except that a mold having a radius of curvature of 5000 mm was used and the pressing time was 4 minutes. When the appearance inspection after the warp was applied, cracks were confirmed on the base plate.
- Example 6 The base plate was processed in the same manner as in Example 1 except that a mold having a radius of curvature of 35000 mm was used. The amount of warpage at each stage is shown in Tables 1 and 2.
- Example 7 The base plate obtained by measuring the warpage in advance obtained by the impregnation method and the outer periphery processing of Example 1 was placed on a cavity of 160 mm ⁇ 120 mm and a depth of 5 mm, and the center of the base plate was tightened with a screw to form a cavity. Was bent using the edge of the fulcrum. In this state, it was put into a furnace, heated at 550 ° C. for 30 minutes, and then cooled. After this, the screw tightening was released and the applied warpage was measured, followed by heat treatment at 320 ° C. for 2 hours, and the warpage was measured again. The results are shown in Tables 1 and 2.
- the heat dissipating component manufactured by the manufacturing method of the present invention has an effect that the return of the warp after joining the circuit boards is small and the heat dissipating property is excellent.
- the return of warpage is small at the time of circuit board bonding or the like, and through subsequent packaging, a heat dissipation component having a stable shape that protrudes toward the heat dissipation fin can be manufactured.
- a heat dissipation component having a stable shape that protrudes toward the heat dissipation fin can be manufactured.
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Abstract
Description
また、ベース板に応力をかけつつ加熱処理して反りを付与する方法では、セラミックス基板とベース板との半田接合及び樹脂封止等のパッケージ化後に、本来目的とする放熱フィンと密着させる側の面が凸型ではなく凹型の反り形状となる、いわゆる反りの戻りが大きく、その結果、放熱性に劣ることが問題であった。
例えば、図1の例では、放熱部品の中心部Oが中点となり、P1およびP2が長辺方向又は短辺方向の線分の端点となる。このP1とP2とを結ぶ直線を想定し、この直線から中心部Oへ引いた垂線の長さをLとする。このとき、P1とP2とを結ぶ直線の長さをMとして、長さMに対する長さLの値を反り量とする。例えば、長さMを10cmとしたときの、長さLの換算値を、10cmあたりの反り量とする。
上記の構成を備える製造方法により、反りの戻りが小さく、放熱フィン等の他の放熱部品に接したときの密着性が良いため放熱性に優れる放熱部品が提供される。その結果、半導体素子等を実装して高信頼性のモジュールを安定して生産性良く得ることができる。
上記の方法により、放熱部品1は、放熱部品1の板面の長手方向及び短手方向における10cmあたり5μm~200μmの反り量を付与されてもよい。
上記の製造方法においては、(Y-Z)について、(Y-Z)<(Y/2)となる関係を満足することにより、反りの戻りが小さく、より放熱性に優れた放熱部品を提供することができる。
(実施例1)
相対密度が65%であり、炭化珪素からなる、寸法が179mm×129mmで厚みが4.9mmのプリフォームを、寸法が182mm×132mmの寸法で深さが5.0mmのキャビティーを有する湯口付きの金型内にセットした。
これを600℃で1時間加熱した後、すぐに12質量%の珪素と0.9質量%のマグネシウムを含有する溶融アルミニウム合金を注入し、高圧プレスをすることにより、プリフォーム内の空隙にアルミニウム合金を含浸させた。冷却後、金型から脱型してアルミニウム‐炭化珪素質複合体を得た。
なお、長手方向、短手方向とも測定位置はベース板の中心を通るラインとした。反り量を測定した結果、片面が長手方向、短手方向ともに凸状、反対面が凹状の反り形状を示した。この凸面について、測定範囲の両端をゼロに換算した際のライン中の最高高さ、すなわち反り量を調べたところ、長手方向で16μm、短手方向で14μmであった。
得られたベース板の凸面側の反り量を測定した結果、長手方向が135μm、短手方向は122μmであった。
曲率半径が7000mmの型を使用したこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が20000mmの型を使用したこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が30000mmの型を使用したこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
型の表面温度を560℃にしたこと、プレス圧力を10KPaにしたこと、ベース板の温度が550℃になった時点から0.5分(30秒)保持したこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
型の表面温度を530℃にしたこと、プレス圧力を30KPaにしたこと、ベース板の温度が520℃になった時点から4分保持したこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が15000mmの型を使用したこと、型の表面温度を560℃としたこと、プレス圧力を10KPaにしたこと、ベース板の温度が550℃になった時点から0.5分保持したこと、さらに反り付与後の加熱処理を270℃、3時間としたこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が15000mmの型を使用したこと、プレス圧力を40KPaにしたこと及び保持時間を4分としたこと、さらに反り付与後の加熱処理を270℃、3時間としたこと以外は、すべて実施例2と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が15000mmの型を使用したこと、型の表面温度を530℃としたこと、プレス圧力を30KPaにしたこと、ベース板の温度が520℃になった時点から3分保持したこと、さらに反り付与後の加熱処理を270℃、3時間としたこと以外は、すべて実施例3と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
型の表面温度を560℃としたこと、プレス圧力を8KPaとしたこと、ベース板の温度が550℃になった時点から3分保持したこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
型の温度を440℃としたこと、ベース板温度を430℃にしたこと、プレス圧力を10KPaとしたこと、プレス時間を0.5分(30秒)としたこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
型の温度を530℃としたこと、ベース板温度を520℃にしたこと、プレス圧力を30KPaとしたこと、保持時間を0.25分(15秒)とした以外は、すべて実施例4と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が15000mmの型を使用したこと、型の温度を560℃としたこと、ベース板温度を550℃にしたこと、プレス圧力を10KPaとしたこと、保持時間を0.25分(15秒)としたこと、さらに反り付与後の加熱処理を270℃、3時間としたこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
曲率半径が5000mmの型を使用したこと、プレス時間を4分としたこと、以外は、すべて実施例1と同じ方法でベース板を処理した。反り付与後の外観検査を実施したところ、ベース板にクラックが確認された。
曲率半径が35000mmの型を使用したことしたこと以外は、すべて実施例1と同じ方法でベース板を処理した。各段階での反り量を表1及び2に示した。
実施例1の含浸方法及び外周加工で得られた、予め反りを測定したベース板を、160mm×120mmで深さが5mmのキャビティー上に置き、ベース板のセンターをネジで締め込んでキャビティーの縁を支点として撓ませた。この状態のまま、炉に投入し、550℃で30分間加熱後、冷却した。この後、ネジ締めを解放し、付与された反りを測定したのち、320℃、2時間加熱処理を施し、再度反りを測定した。結果を表1及び2に示した。
ネジで締め込んだままでの状態の加熱を450℃、30分で行ったこと、ネジ締め解放後の加熱処理を320℃、1時間としたこと以外は、すべて比較例7と同じ条件で処理した。結果を表1及び2に示した。
2 プレス凸型
3 プレス凹型
Claims (6)
- 炭化珪素とアルミニウム合金とからなる複合化部を含む、反りを有する平板状の放熱部品の製造方法であって、
450℃以上の表面温度を有する、曲率半径7000mm~30000mmの1対の対向する球面を有する凹凸型で放熱部品を挟み、該放熱部品の温度が450℃以上の温度となるように、10KPa以上の応力で30秒以上プレスすることを特徴とする放熱部品の製造方法。 - 前記曲率半径が20000mm~30000mmであることを特徴とする請求項1に記載の放熱部品の製造方法。
- 請求項1又は2の製造方法により製造した放熱部品が、
反り付与前の10cmあたりの反り量をX、反り付与後の10cmあたりの反り量を(X+Y)とし、反り付与後の放熱部品を320℃以下の温度で1時間以上加熱処理した後の10cmあたりの反り量を(X+Z)としたとき、YとZとの間に
(Y-Z)<(Y/2)
なる関係を満たすことを特徴とする請求項1又は2に記載の放熱部品の製造方法。 - 請求項1から3のいずれかの製造方法により製造した放熱部品が、
反り付与前の10cmあたりの反り量をX、反り付与後の10cmあたりの反り量を(X+Y)とし、反り付与後の放熱部品を320℃以下の温度で1時間以上加熱処理した後の10cmあたりの反り量を(X+Z)としたとき、
(Y-Z)が18μm以下であることを特徴とする請求項1から3のいずれか一項に記載の放熱部品の製造方法。 - 請求項1から4のいずれかの製造方法により製造した放熱部品が、
反り付与前の10cmあたりの反り量をX、反り付与後の10cmあたりの反り量を(X+Y)とし、反り付与後の放熱部品を320℃以下の温度で1時間以上加熱処理した後の10cmあたりの反り量を(X+Z)としたとき、
(Y/2)-(Y-Z)が1μm~80μmであることを特徴とする請求項1から4のいずれか一項に記載の放熱部品の製造方法。 - 請求項1から5のいずれか一項に記載の製造方法により製造される放熱部品。
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