WO2016010120A1

WO2016010120A1 - Magnetic sensor

Info

Publication number: WO2016010120A1
Application number: PCT/JP2015/070430
Authority: WO
Inventors: 石田　一裕; 佳彦渡邉
Original assignee: 旭化成エレクトロニクス株式会社
Priority date: 2014-07-16
Filing date: 2015-07-16
Publication date: 2016-01-21
Also published as: JPWO2016010120A1; JP6378338B2

Abstract

Disclosed is a magnetic sensor that accurately detects a magnetic field in three orthogonal directions by employing a GMR element or a TMR element. Provided is a magnetic sensor comprising: a first magnetic convergence part that extends in a first direction; a second magnetic convergence part that extends in the first direction, and that extends further in the first direction than a first end part of the first magnetic convergence part; a first magnetoresistive element that extends in the first direction between the first magnetic convergence part and the second magnetic convergence part in a planar view; and a first magnetic convergence member that is connected to the first end part side of the first magnetic convergence part, and that projects from the first end part toward the first magnetoresistive element side in a planar view or as viewed from the first direction.

Description

磁気センサMagnetic sensor

　本発明は、磁気センサに関する。 The present invention relates to a magnetic sensor.

　従来、予め定められた一方向の磁気の有無を検出する巨大磁気抵抗（ＧＭＲ：Ｇｉａｎｔ　Ｍａｇｎｅｔｏ－Ｒｅｓｉｓｔａｎｃｅ）素子およびトンネル磁気抵抗（ＴＭＲ：Ｔｕｎｎｅｌ　Ｍａｇｎｅｔｏ－Ｒｅｓｉｓｔａｎｃｅ）素子が知られていた。また、これらの磁気抵抗素子と、磁気収束部とを組み合わせた磁気センサが知られていた。（例えば、特許文献１～７参照）。
　特許文献１　特開２００６－３１１６号公報
　特許文献２　特開２００６－１０４６１号公報
　特許文献３　特開平７－１６９０２６号公報
　特許文献４　特開２００２－７１３８１号公報
　特許文献５　特開２００４－６７５２号公報
　特許文献６　特開２００３－２８２９９６号公報
　特許文献７　国際公開第２０１１／０６８１４６号 Conventionally, giant magneto-resistance (GMR) elements and tunnel magneto-resistance (TMR) elements that detect the presence or absence of magnetism in a predetermined direction have been known. In addition, a magnetic sensor in which these magnetoresistive elements and a magnetic converging unit are combined is known. (For example, see Patent Documents 1 to 7).
Patent Document 1 Japanese Patent Application Laid-Open No. 2006-3116 Patent Document 2 Japanese Patent Application Laid-Open No. 2006-10461 Patent Document 3 Japanese Patent Application Laid-Open No. Hei 7-169026 Patent Document 4 Japanese Patent Application Laid-Open No. 2002-71381 Patent Document 6 JP 2003-282996 A Patent Document 7 International Publication No. 2011-068146

　しかしながら、このような磁気センサを用いて例えばＸＹＺ方向といった直交する３方向の磁場を検出する場合、複数の磁気センサを検出すべき方向に対応して一方向毎に配置していたので、実装面積等が増加していた。また、このような磁気センサは、例えば、磁気抵抗素子の配置を固定して、検出すべき磁場の方向に応じて磁気収束部を配置することで、意図した方向の磁場を検出することができる。しかしながら、この場合、磁場の感度が入力磁場の方向に応じて変化してしまい、十分なリニアリティの範囲で磁気抵抗素子を動作させることが困難であった。 However, when detecting magnetic fields in three orthogonal directions such as XYZ directions using such a magnetic sensor, a plurality of magnetic sensors are arranged in each direction corresponding to the direction to be detected. Etc. increased. In addition, such a magnetic sensor can detect a magnetic field in an intended direction by, for example, fixing the arrangement of magnetoresistive elements and arranging a magnetic convergence portion according to the direction of the magnetic field to be detected. . However, in this case, the sensitivity of the magnetic field changes according to the direction of the input magnetic field, and it is difficult to operate the magnetoresistive element within a sufficient linearity range.

　本発明の第１の態様においては、第１方向に延伸する第１磁気収束部と、第１方向に延伸し、第１磁気収束部の第１端部側よりも第１方向に延伸する第２磁気収束部と、平面視で、第１磁気収束部および第２磁気収束部の間で第１方向に延伸する第１磁気抵抗素子と、第１磁気収束部の第１端部側に接続され、第１方向から見て、または平面視で、第１端部から第１磁気抵抗素子側に突出した第１磁気収束部材と、を備える磁気センサを提供する。 In the first aspect of the present invention, the first magnetic converging part extending in the first direction and the first magnetic converging part extending in the first direction and extending in the first direction from the first end side of the first magnetic converging part. A first magnetic resistance element extending in a first direction between the first magnetic converging unit and the second magnetic converging unit in a plan view, and a first end of the first magnetic converging unit And a first magnetic flux concentrating member that protrudes from the first end toward the first magnetoresistive element in a first direction or in a plan view.

　本発明の第２の態様においては、第１方向に延伸する第１磁気収束部と、第１方向に延伸し、第１磁気収束部の第１端部側よりも第１方向に延伸する第２磁気収束部と、平面視で、第１磁気収束部および第２磁気収束部の間で第１方向に延伸する第１磁気抵抗素子と、第１磁気収束部の第１端部に接続され、第１磁気抵抗素子の第１方向側から第１磁気抵抗素子の端部へと入力される磁界を低減する第１磁気収束部材と、を備える磁気センサを提供する。 In the second aspect of the present invention, the first magnetic converging part extending in the first direction and the first magnetic converging part extending in the first direction and extending in the first direction from the first end side of the first magnetic converging part. A first magnetic resistance element extending in a first direction between the first magnetic converging part and the second magnetic converging part in a plan view, and a first end of the first magnetic converging part. And a first magnetic flux concentrating member that reduces a magnetic field input from the first direction side of the first magnetoresistive element to the end of the first magnetoresistive element.

（一般的開示）
　磁気センサは、第１方向に延伸する第１磁気収束部を備えてよい。
　磁気センサは、第１方向に延伸し、第１磁気収束部の第１端部よりも第１方向に延伸する第２磁気収束部を備えてよい。
　磁気センサは、平面視で、第１磁気収束部および第２磁気収束部の間で第１方向に延伸する第１磁気抵抗素子を備えてよい。
　磁気センサは、第１磁気収束部の第１端部に接続され、第１方向から見て、または平面視で、第１端部から第１磁気抵抗素子側に突出した第１磁気収束部材を備えてよい。
　第１磁気収束部材は、第１方向から見て、第１端部から第２磁気収束部側へと延伸してよい。
　第１磁気収束部材は、第１方向と垂直な断面が第１磁気収束部の第１方向と垂直な断面よりも大きくてよい。
　第１磁気抵抗素子は、第２磁気収束部よりも第１磁気収束部までの距離が小さくてよい。
　磁気センサは、平面視で、第１磁気収束部および第２磁気収束部の間で第１方向に延伸し、第１磁気収束部よりも第２磁気収束部に近い第２磁気抵抗素子を備えてよい。
　第１磁気収束部の第１方向とは反対側の端部は、第２磁気収束部の第１方向とは反対側の第２端部よりも第１方向とは反対方向に延伸してよい。
　磁気センサは、第２磁気収束部の第１方向とは反対側の第２端部に接続され、第１方向から見て、または平面視で、第２端部から第１磁気抵抗素子側に突出した第２磁気収束部材を備えてよい。
　第２磁気収束部材は、平面視で、多角形の形状を有してよい。
　磁気センサは、第１磁気収束部の第１方向と垂直な第２方向の側部に接続され、第１方向から見て、または平面視で、第１磁気抵抗素子側に突出した第１補助磁気収束部材を備えてよい。
　磁気センサは、第２磁気収束部の第２方向の側部に接続され、第１方向から見て、または平面視で、第２磁気抵抗素子側に突出した第２補助磁気収束部材を備えてよい。
　磁気センサは、第１方向に延伸し、第１磁気収束部の第１端部よりも第１方向に延伸され、第１磁気収束部に対し第２磁気収束部とは反対側に設けられた第３磁気収束部を備えてよい。
　磁気センサは、平面視で、第１磁気収束部および第３磁気収束部の間で第１方向に延伸する第３磁気抵抗素子を備えてよい。
　第１磁気収束部の第１端部とは反対側の端部は、第３磁気収束部の第１方向とは反対側の第３端部よりも第１方向とは反対方向に延伸されてよい。
　磁気センサは、第３磁気収束部の第３端部に接続され、第１方向から見て、または平面視で、第３端部から第３磁気抵抗素子側に突出した第３磁気収束部材を備えてよい。
　第３磁気収束部材は、平面視で、多角形の形状を有してよい。
　第３磁気抵抗素子は、第３磁気収束部よりも第１磁気収束部との距離が小さくてよい。
　磁気センサは、平面視で、第１磁気収束部および第３磁気収束部の間で第１方向に延伸し、第１磁気収束部よりも第３磁気収束部との距離が小さい第４磁気抵抗素子を備えてよい。
　磁気センサは、第１磁気収束部の第２方向の側部に接続され、第１方向から見て、または平面視で、第３磁気抵抗素子側に突出した第３補助磁気収束部材を備えてよい。
　磁気センサは、第３磁気収束部の第２方向の側部に接続され、第１方向から見て、または平面視で、第４磁気抵抗素子側に突出した第４補助磁気収束部材を備えてよい。
　第１から第４磁気抵抗素子は、平面視で、第１磁気収束部に対して対称な配置に設けられてよい。
　第１から第４磁気抵抗素子は、略同一方向の感磁性を有してよい。
　第２磁気収束部および第３磁気収束部は、平面視で、第１磁気収束部に対して対称な配置に設けられてよい。
　第１磁気収束部材は、第１方向から見て、または平面視で、第１端部から第３磁気抵抗素子側に突出してよい。
　磁気センサは、第１磁気収束部の第１端部とは反対側の端部に接続され、第１方向から見て、または平面視で、第１端部とは反対側の端部から第１磁気抵抗素子側に突出した第４磁気収束部材を備えてよい。
　磁気センサは、第２磁気収束部の第１方向に延伸された端部に接続され、第１方向から見て、または平面視で、第１方向に延伸された端部から第１磁気抵抗素子側に突出した第５磁気収束部材を備えてよい。
　磁気センサは、第３磁気収束部の第１方向とは反対側の端部に接続され、第１方向から見て、または平面視で、第１方向とは反対側の端部から第３磁気抵抗素子側に突出した第６磁気収束部材を備えてよい。
　磁気センサは、第１磁気収束部の第１端部とは反対側の端部に接続され、第１方向から見て、または平面視で、第１端部とは反対側の端部から第１磁気抵抗素子側および／または第３磁気抵抗素子側に突出した第４磁気収束部材を備えてよい。
　第１磁気収束部材は、平面視で、多角形の形状を有してよい。
　第１磁気収束部材は、平面視で、第１方向において第１磁気抵抗素子と重なる位置まで延伸してよい。
　磁気センサは、第１から第４磁気抵抗素子のそれぞれの磁気抵抗の変化に基づき、入力された磁場の方向および大きさを算出する算出部を備えてよい。
　磁気センサは、第１磁気収束部の第１端部に接続され、第１磁気抵抗素子の第１方向側から第１磁気抵抗素子の端部へと入力される磁界を低減する第１磁気収束部材を備えてよい。
　なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。 (General disclosure)
The magnetic sensor may include a first magnetic focusing portion that extends in the first direction.
The magnetic sensor may include a second magnetic focusing portion that extends in the first direction and extends in the first direction rather than the first end of the first magnetic focusing portion.
The magnetic sensor may include a first magnetoresistive element that extends in a first direction between the first magnetic converging unit and the second magnetic converging unit in plan view.
The magnetic sensor is connected to the first end of the first magnetic converging unit, and includes a first magnetic converging member that protrudes from the first end toward the first magnetoresistive element when viewed from the first direction or in plan view. You may be prepared.
The first magnetic flux concentrator member may extend from the first end portion to the second magnetic flux convergent portion side when viewed from the first direction.
The first magnetic flux concentrator member may have a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction of the first magnetic flux concentrator.
The first magnetoresistive element may have a smaller distance to the first magnetic converging part than the second magnetic converging part.
The magnetic sensor includes a second magnetoresistive element that extends in a first direction between the first magnetic converging unit and the second magnetic converging unit in a plan view and is closer to the second magnetic converging unit than the first magnetic converging unit. It's okay.
The end of the first magnetic flux concentrator opposite to the first direction may extend in the direction opposite to the first direction than the second end of the second magnetic flux concentrator opposite to the first direction. .
The magnetic sensor is connected to the second end of the second magnetic converging part opposite to the first direction and viewed from the first direction or in plan view from the second end to the first magnetoresistive element side. A protruding second magnetic flux concentrating member may be provided.
The second magnetic flux concentrator member may have a polygonal shape in plan view.
The magnetic sensor is connected to a side portion in a second direction perpendicular to the first direction of the first magnetic converging portion, and is viewed from the first direction or in a plan view and protrudes toward the first magnetoresistive element side. A magnetic focusing member may be provided.
The magnetic sensor includes a second auxiliary magnetic converging member that is connected to a side portion in the second direction of the second magnetic converging unit and protrudes toward the second magnetoresistive element when viewed from the first direction or in plan view. Good.
The magnetic sensor extends in the first direction, extends in the first direction from the first end of the first magnetic converging unit, and is provided on the opposite side of the second magnetic converging unit with respect to the first magnetic converging unit. A third magnetic convergence unit may be provided.
The magnetic sensor may include a third magnetoresistive element extending in the first direction between the first magnetic converging unit and the third magnetic converging unit in plan view.
The end of the first magnetic flux concentrator opposite to the first end is extended in a direction opposite to the first direction than the third end of the third magnetic flux concentrator opposite to the first direction. Good.
The magnetic sensor is connected to the third end of the third magnetic converging part, and has a third magnetic converging member protruding from the third end toward the third magnetoresistive element when viewed from the first direction or in plan view. You may be prepared.
The third magnetic flux concentrator member may have a polygonal shape in plan view.
The third magnetoresistive element may have a smaller distance from the first magnetic converging unit than the third magnetic converging unit.
The magnetic sensor extends in the first direction between the first magnetic converging unit and the third magnetic converging unit in a plan view, and has a fourth magnetoresistance having a smaller distance from the third magnetic converging unit than the first magnetic converging unit. An element may be provided.
The magnetic sensor includes a third auxiliary magnetic converging member that is connected to a side portion in the second direction of the first magnetic converging unit and protrudes toward the third magnetoresistive element when viewed from the first direction or in plan view. Good.
The magnetic sensor includes a fourth auxiliary magnetic converging member that is connected to a side portion in the second direction of the third magnetic converging unit and protrudes toward the fourth magnetoresistive element when viewed from the first direction or in plan view. Good.
The first to fourth magnetoresistive elements may be provided in a symmetrical arrangement with respect to the first magnetic converging part in plan view.
The first to fourth magnetoresistive elements may have magnetism in substantially the same direction.
The second magnetic converging part and the third magnetic converging part may be provided in a symmetrical arrangement with respect to the first magnetic converging part in plan view.
The first magnetic flux concentrator may protrude from the first end toward the third magnetoresistive element when viewed from the first direction or in plan view.
The magnetic sensor is connected to an end opposite to the first end of the first magnetic converging portion, and is viewed from the end opposite to the first end in the first direction or in plan view. A fourth magnetic flux concentrating member protruding toward the one magnetoresistive element may be provided.
The magnetic sensor is connected to an end portion extended in the first direction of the second magnetic converging portion, and viewed from the first direction or from the end portion extended in the first direction in plan view, the first magnetoresistive element. A fifth magnetic flux concentrating member protruding to the side may be provided.
The magnetic sensor is connected to an end portion of the third magnetic converging portion opposite to the first direction, and is viewed from the first direction or from the end opposite to the first direction in a plan view. A sixth magnetic flux concentrating member protruding toward the resistance element side may be provided.
The magnetic sensor is connected to an end opposite to the first end of the first magnetic converging portion, and is viewed from the end opposite to the first end in the first direction or in plan view. A fourth magnetic flux concentrating member protruding toward the first magnetoresistive element side and / or the third magnetoresistive element side may be provided.
The first magnetic flux concentrator member may have a polygonal shape in plan view.
The first magnetic flux concentrator member may extend to a position overlapping the first magnetoresistive element in the first direction in plan view.
The magnetic sensor may include a calculation unit that calculates the direction and magnitude of the input magnetic field based on changes in the respective magnetoresistances of the first to fourth magnetoresistive elements.
The magnetic sensor is connected to the first end of the first magnetic converging unit and reduces the magnetic field input from the first direction side of the first magnetoresistive element to the end of the first magnetoresistive element. A member may be provided.
It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

磁気センサ１００の構成例を示す。The structural example of the magnetic sensor 100 is shown. 磁気センサ１００を＋Ｙ方向に見た構成例を示す。The structural example which looked at the magnetic sensor 100 to + Y direction is shown. 第１磁気抵抗素子１２１のＹ方向の位置に対する磁場変換率α、β、およびγの変化の概略構成例を示す。A schematic configuration example of changes in the magnetic field conversion rates α, β, and γ with respect to the position of the first magnetoresistive element 121 in the Y direction is shown. 第１磁気収束部１１１のＹ方向の断面の構成例を示す。The structural example of the cross section of the Y direction of the 1st magnetic converging part 111 is shown. 本実施形態に係る磁気センサ１００の構成例を示す。The structural example of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る磁気センサ１００を＋Ｙ方向に見た構成例を示す。The structural example which looked at the magnetic sensor 100 which concerns on this embodiment to + Y direction is shown. 本実施形態に係る第１磁気抵抗素子１２１のＹ方向の位置に対する磁場変換率α、β、およびγの変化の概略構成例を示す。A schematic configuration example of changes in the magnetic field conversion rates α, β, and γ with respect to the position in the Y direction of the first magnetoresistive element 121 according to the present embodiment is shown. 本実施形態に係る第１磁気収束部１１１および第１磁気収束部材１３１を＋Ｘ方向に見た構成例を示す。The structural example which looked at the 1st magnetic converging part 111 and the 1st magnetic converging member 131 which concern on this embodiment in the + X direction is shown. 本実施形態に係る磁気センサ１００の第１の変形例を示す。The 1st modification of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る磁気センサ１００の第１の変形例を＋Ｙ方向に見た構成例を示す。The structural example which looked at the 1st modification of the magnetic sensor 100 which concerns on this embodiment in + Y direction is shown. 本実施形態に係る磁気センサ１００の第２の変形例を示す。The 2nd modification of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る磁気センサ１００の第３の変形例を示す。The 3rd modification of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る磁気センサ１００の第４の変形例を示す。The 4th modification of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る磁気センサ１００の第５の変形例を示す。The 5th modification of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る磁気センサ１００の第６の変形例を示す。The 6th modification of the magnetic sensor 100 which concerns on this embodiment is shown. 本実施形態に係る第１磁気抵抗素子１２１のＹ方向の位置に対する磁場変換率α、β、およびγの変化の概略構成例を示す。A schematic configuration example of changes in the magnetic field conversion rates α, β, and γ with respect to the position in the Y direction of the first magnetoresistive element 121 according to the present embodiment is shown. 本実施形態に係る磁気センサ１００の第７の変形例を示す。The 7th modification of the magnetic sensor 100 which concerns on this embodiment is shown.

　以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。 Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

　図１は、磁気センサ１００の構成例を示す。磁気センサ１００は、直交する３方向をそれぞれ向く磁場が混合した（合成された）３軸混成磁場を検出する。図１は、直交する３方向をＸ、Ｙ、Ｚ軸で示し、磁気センサ１００のＸＹ平面の平面視を示す。即ち、図１は、基板等の一方の面に磁気センサ１００が形成された場合の上面図の一例を示す。 FIG. 1 shows a configuration example of the magnetic sensor 100. The magnetic sensor 100 detects a three-axis hybrid magnetic field in which magnetic fields facing in three orthogonal directions are mixed (synthesized). FIG. 1 shows three orthogonal directions by X, Y, and Z axes, and shows a plan view of the XY plane of the magnetic sensor 100. That is, FIG. 1 shows an example of a top view when the magnetic sensor 100 is formed on one surface of a substrate or the like.

　磁気センサ１００は、磁気収束部１１０と、磁気抵抗素子１２０とを備える。図１の磁気センサ１００は、磁気収束部１１０が第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３を有し、磁気抵抗素子１２０が第１磁気抵抗素子１２１から第５磁気抵抗素子１２５までの５つの素子を有する例を示す。ここで、第１方向を図１の－Ｙ方向とする。 The magnetic sensor 100 includes a magnetic convergence unit 110 and a magnetoresistive element 120. In the magnetic sensor 100 of FIG. 1, the magnetic converging unit 110 includes a first magnetic converging unit 111, a second magnetic converging unit 112, and a third magnetic converging unit 113, and the magnetoresistive element 120 is changed from the first magnetoresistive element 121. The example which has five elements to the 5th magnetoresistive element 125 is shown. Here, the first direction is the −Y direction in FIG.

　磁気収束部１１０は、第１方向に延伸し、ＸＹ面に平行な面に形成される。磁気収束部１１０は、パーマロイ等の磁性材料で形成され、当該磁気収束部１１０近傍の磁力線の向きを変化させる。図１において、第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３は、略同一形状に形成され、Ｘ方向に等間隔に配列される例を示す。 The magnetic convergence part 110 extends in the first direction and is formed on a plane parallel to the XY plane. The magnetic converging part 110 is made of a magnetic material such as permalloy, and changes the direction of the lines of magnetic force near the magnetic converging part 110. In FIG. 1, the 1st magnetic converging part 111, the 2nd magnetic converging part 112, and the 3rd magnetic converging part 113 are formed in the substantially identical shape, and the example arrange | positioned at equal intervals in a X direction is shown.

　また、第１磁気収束部１１１は、第２磁気収束部１１２および第３磁気収束部１１３に対して、＋Ｙ方向にΔＹずらして形成される例を示す。また、第２磁気収束部１１２および第３磁気収束部１１３は、第１磁気収束部１１１に対して対称に配置されてよい。 Further, an example is shown in which the first magnetic converging part 111 is formed by being shifted by ΔY in the + Y direction with respect to the second magnetic converging part 112 and the third magnetic converging part 113. Further, the second magnetic converging unit 112 and the third magnetic converging unit 113 may be disposed symmetrically with respect to the first magnetic converging unit 111.

　図１の点線は、磁束の経路の一例を示す。このように、磁気収束部１１０は、例えば、Ｙ方向に入力する磁場Ｂ_Ｙを曲げてＸ方向の磁場成分を発生させ、当該Ｘ方向の磁場成分を磁気抵抗素子１２０に供給する。 A dotted line in FIG. 1 shows an example of a magnetic flux path. Thus, the magnetic converging unit 110 generates a magnetic field component in the X direction by bending the magnetic field _BY input in the Y direction, and supplies the magnetic field component in the X direction to the magnetoresistive element 120, for example.

　第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、第１方向に延伸し、第１方向と垂直な第２方向の磁場を検知する。図１の例において、磁気抵抗素子１２０は、第１方向に垂直な＋Ｘ方向および－Ｘ方向の磁場を検知する。即ち、第２方向は、＋Ｘ方向および－Ｘ方向を含むものとする。 The first to fifth magnetoresistive elements 121 to 125 extend in the first direction and detect a magnetic field in the second direction perpendicular to the first direction. In the example of FIG. 1, the magnetoresistive element 120 detects magnetic fields in the + X direction and the −X direction perpendicular to the first direction. That is, the second direction includes the + X direction and the −X direction.

　図１において、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、略同一形状にそれぞれ形成され、Ｘ方向に等間隔にそれぞれ配列される例を示す。また、第１磁気抵抗素子１２１から第４磁気抵抗素子１２４は、第５磁気抵抗素子１２５に対して対称に配置されてよい。図１は、第１磁気収束部１１１のＹ方向の中心軸と第５磁気抵抗素子１２５のＹ方向の中心軸とが平面視で一致するように配置され、磁気センサ１００が当該２つの中心軸を含むＹＺ面に対して面対称に形成された例を示す。ここで、対称面であるＹＺ面を第１面とし、図１においては当該第１面を一点鎖線Ａ－Ａ'で示す。 1 shows an example in which the first magnetoresistive element 121 to the fifth magnetoresistive element 125 are formed in substantially the same shape and are arranged at equal intervals in the X direction. Further, the first magnetoresistive element 121 to the fourth magnetoresistive element 124 may be arranged symmetrically with respect to the fifth magnetoresistive element 125. In FIG. 1, the Y-direction central axis of the first magnetic converging unit 111 and the Y-direction central axis of the fifth magnetoresistive element 125 are arranged so as to coincide with each other in plan view, and the magnetic sensor 100 includes the two central axes. The example formed symmetrically with respect to the YZ plane including Here, the YZ plane which is a symmetry plane is defined as a first plane, and in FIG. 1, the first plane is indicated by an alternate long and short dash line AA ′.

　例えば、磁気収束部１１０は、図１の点線で示すように、＋Ｙ方向に平行に入力される磁場Ｂ_Ｙを曲げて＋Ｘ方向の磁場成分を発生させ、第１磁気抵抗素子１２１に供給する。ここで、磁束の経路が第１磁気抵抗素子１２１に入力する場合に、当該経路のＸ成分が、第１磁気抵抗素子１２１に供給される第２方向の磁場の成分に対応する。したがって、磁束の経路がＹ方向と平行になっている場合は、第１磁気抵抗素子１２１に供給される第２方向の磁場の成分は零である。 For example, the magnetic converging unit 110 generates a magnetic field component in the + X direction by bending the magnetic field _BY input in parallel to the + Y direction and supplies the magnetic field component to the first magnetoresistive element 121 as indicated by a dotted line in FIG. Here, when the path of the magnetic flux is input to the first magnetoresistive element 121, the X component of the path corresponds to the magnetic field component in the second direction supplied to the first magnetoresistive element 121. Therefore, when the magnetic flux path is parallel to the Y direction, the magnetic field component in the second direction supplied to the first magnetoresistive element 121 is zero.

　第１磁気抵抗素子１２１は、発生したＸ方向の磁場成分を＋β・Ｂ_Ｙとすると、＋δＲ・β・Ｂ_Ｙの抵抗値変化を生じさせる。このように、磁気センサ１００の磁気抵抗素子１２０は、Ｙ方向に入力する磁場Ｂ_Ｙの大きさに応じて、抵抗値を変化させることができる。ここで、βは、磁気収束部１１０がＹ方向に入力する磁場Ｂ_Ｙを第２方向の磁場の成分に変換する磁場変換率を示し、言い換えると、Ｙ方向に入力する磁場Ｂ_Ｙの大きさに対して、第１磁気抵抗素子１２１に入力するＸ方向の磁場の大きさの割合を示す。βは、０以上の値をとる。δＲは、磁気抵抗素子の磁気感度に相当し、Ｘ方向の磁場に対する第１磁気抵抗素子１２１の抵抗変化量を示す。同様に、第２磁気抵抗素子１２２は、磁場Ｂ_Ｙによって＋δＲ・β・Ｂ_Ｙの抵抗値変化を生じさせる。 The first magnetoresistive element 121 causes a change in resistance value of + δR · β · _BY , assuming that the generated magnetic field component in the X direction is + β · _BY . Thus, the magnetoresistive element 120 of the magnetic sensor 100 can change the resistance value in accordance with the magnitude of the magnetic field _BY input in the Y direction. Here, β indicates a magnetic field conversion rate for converting the magnetic field _BY input in the Y direction by the magnetic converging unit 110 into a magnetic field component in the second direction, in other words, the magnitude of the magnetic field _BY input in the Y direction. , The ratio of the magnitude of the magnetic field in the X direction input to the first magnetoresistive element 121 is shown. β takes a value of 0 or more. δR corresponds to the magnetic sensitivity of the magnetoresistive element, and indicates the resistance change amount of the first magnetoresistive element 121 with respect to the magnetic field in the X direction. Similarly, the second magnetoresistive element 122 causes a resistance value change of + δR · β · _BY due to the magnetic field _BY .

　また、磁気センサ１００は、第１面に対して面対称に形成されているので、第１磁気抵抗素子１２１と対称な配置の第３磁気抵抗素子１２３、および第２磁気抵抗素子１２２と対称な配置の第４磁気抵抗素子１２４は、磁場Ｂ_Ｙによって磁気収束部１１０から逆方向（即ち、－Ｘ方向）の磁場成分が供給される。磁気収束部１１０は、例えば、磁場Ｂ_Ｙの入力に応じて、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４にＸ方向の磁場成分－β・Ｂ_Ｙをそれぞれ供給する。そして、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４は、－δＲ・β・Ｂ_Ｙの抵抗値変化をそれぞれ生じさせる。ここで、磁場Ｂ_Ｙによって生じるＸ方向の磁場成分－β・Ｂ_Ｙは、＋Ｘ方向とは逆向きの－Ｘ方向なので、抵抗値変化もマイナスとなる。 Further, since the magnetic sensor 100 is formed symmetrically with respect to the first surface, the magnetic sensor 100 is symmetrical with the third magnetoresistive element 123 and the second magnetoresistive element 122 arranged symmetrically with the first magnetoresistive element 121. The arranged fourth magnetoresistive element 124 is supplied with a magnetic field component in the reverse direction (ie, −X direction) from the magnetic converging unit 110 by the magnetic field _BY . The magnetic flux concentrator 110, for example, in response to an input of the magnetic field _{B Y,} and supplies each X-direction magnetic field component-beta · _{B Y} to third magnetoresistive element 123 and the fourth magnetoresistive element 124. The third magnetoresistive element 123 and the fourth magnetoresistive element 124 cause a change in resistance value of −δR · β · _BY , respectively. Here, the magnetic field component-beta · B _Y in the X direction caused by the magnetic field B _Y is + since the X-direction -X direction opposite the resistance value change becomes negative.

　また、第１磁気収束部１１１は、第５磁気抵抗素子１２５を覆うように形成されるので、当該第５磁気抵抗素子１２５が配置される位置には、磁場Ｂ_Ｙから変換される第２方向の磁場成分はほとんど発生しない。また、磁気収束部１１０は、第１面に対して面対称に形成されるので、磁場Ｂ_Ｙの入力に応じて第５磁気抵抗素子１２５に第２方向の磁場の成分が入力しても、入力した第２方向の磁場の成分も第１面に対して面対称となって総和がほぼ零となる。したがって、第５磁気抵抗素子１２５は、磁場Ｂ_Ｙの入力があっても、抵抗値変化がほとんど生じない。 Moreover, since the 1st magnetic converging part 111 is formed so that the 5th magnetoresistive element 125 may be covered, it is the 2nd direction converted from the magnetic field _BY in the position where the said 5th magnetoresistive element 125 is arrange | positioned. The magnetic field component of is hardly generated. Further, since the magnetic converging unit 110 is formed symmetrically with respect to the first surface, even if a magnetic field component in the second direction is input to the fifth magnetoresistive element 125 in response to the input of the magnetic field _BY , The input magnetic field component in the second direction is also plane-symmetric with respect to the first surface, and the sum is almost zero. Therefore, the fifth magnetoresistive element 125 hardly changes in resistance value even when the magnetic field _BY is input.

　図２は、磁気センサ１００を＋Ｙ方向に見た構成例を示す。図２は、図１に対応して、紙面の横方向をＸ方向、縦方向をＺ方向、垂直方向をＹ方向とする。図２は、基板２０の一方の面に形成された磁気センサ１００の一例を示す。 FIG. 2 shows a configuration example when the magnetic sensor 100 is viewed in the + Y direction. 2, corresponding to FIG. 1, the horizontal direction of the paper is the X direction, the vertical direction is the Z direction, and the vertical direction is the Y direction. FIG. 2 shows an example of the magnetic sensor 100 formed on one surface of the substrate 20.

　磁気抵抗素子１２０は、例えば、基板２０の一方の面に形成された絶縁層３０の内部に形成される。即ち、磁気抵抗素子１２０は、基板２０および磁気収束部１１０とはそれぞれ電気的に絶縁されて形成される。また、磁気収束部１１０は、絶縁層３０の上面に形成される。 The magnetoresistive element 120 is formed, for example, inside the insulating layer 30 formed on one surface of the substrate 20. That is, the magnetoresistive element 120 is formed so as to be electrically insulated from the substrate 20 and the magnetic converging unit 110. Further, the magnetic flux concentrator 110 is formed on the upper surface of the insulating layer 30.

　磁気収束部１１０は、例えば、＋Ｘ方向に平行に入力される磁場Ｂ_Ｘを、図２の点線で示すように変化させる。即ち、磁気収束部１１０は、＋α・Ｂ_Ｘの磁場を第１磁気抵抗素子１２１から第４磁気抵抗素子１２４に供給し、＋δＲ・α・Ｂ_Ｘの抵抗値変化をそれぞれ生じさせる。ここで、αは、磁気収束部１１０がＸ方向に入力する磁場Ｂ_Ｘをそれぞれの磁気抵抗素子が検出する第２方向の磁場の成分に変換する磁場変換率を示し、言い換えると、Ｘ方向に入力する磁場Ｂ_Ｘの大きさに対して、それぞれの磁気抵抗素子に入力するＸ方向の磁場の大きさの割合を示す。αは、０以上の値をとる。 The magnetic flux concentrator 110, for example, + X direction in a magnetic field B _X input in parallel, changing as indicated by the dotted lines in FIG. That is, the magnetic converging unit 110 supplies a magnetic field of + α · B _X from the first magnetoresistive element 121 to the fourth magnetoresistive element 124 to cause a change in resistance value of + δR · α · B _X , respectively. Here, alpha denotes a magnetic field conversion to convert a magnetic field B _X of the magnetic flux concentrator 110 is input to the X direction component of the second direction of the magnetic field, each magnetoresistive element detects, in other words, in the X-direction The ratio of the magnitude of the magnetic field in the X direction inputted to each magnetoresistive element with respect to the magnitude of the input magnetic field B _X is shown. α takes a value of 0 or more.

　ここで、第１磁気収束部１１１は、第５磁気抵抗素子１２５を覆うように形成されるので、当該第５磁気抵抗素子１２５が配置される位置には、磁場Ｂ_Ｘの第２方向の磁場のほとんどが第１磁気収束部１１１に収束される磁束の経路が形成される。即ち、入力磁場Ｂ_Ｘに対して変換される第２方向の磁場の成分がほとんど発生しないので、第５磁気抵抗素子１２５は、磁場Ｂ_Ｙの入力と同様に、磁場Ｂ_Ｘの入力があっても、抵抗値変化はほとんど生じない。 Here, the first magnetic flux concentrator 111, since it is formed so as to cover the fifth magnetoresistance device 125, the the position of the fifth magnetoresistance device 125 is disposed, in the second direction of the magnetic field B _X field A magnetic flux path is formed so that most of the magnetic flux is converged to the first magnetic converging unit 111. That is, since the component of the second direction of the magnetic field to be converted to the input magnetic field B _X is hardly generated, the fifth magnetoresistance device 125 is similar to the input of the magnetic field B _Y, there is an input of the magnetic field B _X However, the resistance value hardly changes.

　また、磁気収束部１１０は、例えば、＋Ｚ方向に平行に入力される磁場Ｂ_Ｚを、図２の実線に示すように変化させる。また、第１面に平行で、かつ、第１磁気抵抗素子１２１および第２磁気抵抗素子１２２に挟まれる面を第２面とし、第１磁気抵抗素子１２１、第２磁気抵抗素子１２２、第１磁気収束部１１１、および第２磁気収束部１１２が、Ｙ方向から見た平面視で、当該第２面に対して対称に形成されている場合、磁場Ｂ_Ｚ１およびＢ_Ｚ２は、当該第２面に対して面対称となる。ここで、図２において、第２面を一点鎖線Ｂ－Ｂ'で示す。 Further, the magnetic flux concentrator 110, for example, + Z magnetic field B _Z which is input in parallel to the direction to change as shown by the solid line in FIG. The surface parallel to the first surface and sandwiched between the first magnetoresistive element 121 and the second magnetoresistive element 122 is the second surface, and the first magnetoresistive element 121, the second magnetoresistive element 122, the first When the magnetic converging unit 111 and the second magnetic converging unit 112 are formed symmetrically with respect to the second surface in a plan view viewed from the Y direction, the magnetic fields B _Z1 and B _Z2 are related to the second surface. Is plane-symmetric. Here, in FIG. 2, the second surface is indicated by a one-dot chain line BB ′.

　この場合、磁気収束部１１０は、例えば、磁場Ｂ_Ｚの入力に応じて、第１磁気抵抗素子１２１に＋Ｘ方向の磁場成分を発生させる。即ち、第１磁気抵抗素子１２１は、発生した＋Ｘ方向の磁場成分を＋γ・Ｂ_Ｚとすると、＋δＲ・γ・Ｂ_Ｚの抵抗値変化を生じさせる。ここで、γは、磁気収束部１１０がＺ方向に入力する磁場Ｂ_Ｚを第２方向の磁場の成分に変換する磁場変換率を示し、言い換えると、Ｚ方向に入力する磁場Ｂ_Ｚの大きさに対して、第１磁気抵抗素子１２１に入力するＸ方向の磁場の大きさの割合を示す。γは、０以上の値をとる。また、磁気収束部１１０は、磁場Ｂ_Ｚの入力に応じて、第１磁気抵抗素子１２１とは面対称な配置の第２磁気抵抗素子１２２にＸ方向の磁場成分－γ・Ｂ_Ｚを発生させ、第２磁気抵抗素子１２２は、－δＲ・γ・Ｂ_Ｚの抵抗値変化を生じさせる。 In this case, the magnetic flux concentrator 110, for example, in response to an input of the magnetic field B _Z, generates a + X direction of the magnetic field component in the first magnetoresistive element 121. That is, the first magneto resistive element 121, when generated + X direction magnetic field components and + γ · B _Z, causing a change in resistance + δR · γ · B _Z. Here, gamma indicates the magnetic field conversion for converting the magnetic field B _Z which the magnetic flux concentrator 110 is input to the Z direction component of the second direction of the magnetic field, in other words, the magnetic field B _Z to enter in the Z direction size , The ratio of the magnitude of the magnetic field in the X direction input to the first magnetoresistive element 121 is shown. γ takes a value of 0 or more. Further, the magnetic flux concentrator 110, in response to the input of the magnetic field B _Z, generates a magnetic field component-gamma · B _Z in the X direction to the second magnetoresistive element 122 disposed surfaces symmetrical to the first magneto-resistive element 121 , second magnetoresistance element 122 causes a change in resistance -δR · γ · _{B Z.}

　同様に、磁気収束部１１０は、磁場Ｂ_Ｚの入力に応じて、第３磁気抵抗素子１２３にＸ方向の磁場成分－γ・Ｂ_Ｚを発生させ、第３磁気抵抗素子１２３は、－δＲ・γ・Ｂ_Ｚの抵抗値変化を生じさせる。また、磁気収束部１１０は、磁場Ｂ_Ｚの入力に応じて、第４磁気抵抗素子１２４にＸ方向の磁場成分＋γ・Ｂ_Ｚを発生させ、第４磁気抵抗素子１２４は、＋δＲ・γ・Ｂ_Ｚの抵抗値変化を生じさせる。 Similarly, the magnetic flux concentrator 110, in response to the input of the magnetic field _{B Z,} generates a magnetic field component-gamma · _{B Z} in the X direction to the third magnetoresistance device 123, a third magnetoresistive element 123, - [Delta] R · causing a change in resistance γ · B _Z. Further, the magnetic flux concentrator 110, in response to the input of the magnetic field _{B Z,} the fourth magneto-resistive element 124 to generate a magnetic field component + γ · _{B Z} of the X-direction, the fourth magneto-resistive element 124, + δR · γ · B The resistance value of _Z is changed.

　ここで、第１磁気収束部１１１は、第５磁気抵抗素子１２５を覆うように形成されるので、当該第５磁気抵抗素子１２５が配置される位置には、磁場Ｂ_Ｚから変換される第２方向の磁場の成分はほとんど発生しない。また、磁気収束部１１０は、第１面に対して面対称に形成されるので、磁場Ｂ_Ｚの入力に応じて第５磁気抵抗素子１２５に第２方向の磁場の成分が入力しても、入力した当該磁場成分も第１面に対して面対称となってほとんどが相殺される。したがって、第５磁気抵抗素子１２５は、磁場Ｂ_Ｙの入力と同様に、磁場Ｂ_Ｚの入力があっても、抵抗値変化はほとんど生じない。 Here, since the first magnetic converging part 111 is formed so as to cover the fifth magnetoresistive element 125, the second magnetic field _BZ converted from the magnetic field BZ is disposed at the position where the fifth magnetoresistive element 125 is disposed. Almost no magnetic field component is generated. Further, the magnetic flux concentrator 110, since it is formed in plane symmetry with respect to the first surface, even if components of the second direction of the magnetic field to the fifth magnetoresistance device 125 according to the input of the magnetic field B _Z inputs, The input magnetic field component is also plane-symmetric with respect to the first surface and is almost cancelled. Therefore, in the fifth magnetoresistance element 125, as with the input of the magnetic field _BY , the resistance value hardly changes even when the magnetic field _BZ is input.

　以上のように、磁気センサ１００は、Ｘ、Ｙ、およびＺ方向に入力する磁場を磁気収束部１１０を用いて第５磁気抵抗素子１２５を除く磁気抵抗素子にＸ方向の磁場成分が発生するようにそれぞれ曲げ、それぞれの抵抗値に変化を生じさせる。したがって、磁気抵抗素子１２０は、任意の方向の磁場が入力した場合（即ち、磁場のＸ、Ｙ、およびＺ軸成分の合成で表される入力磁場に対して）、各方向の磁場に応じた抵抗値変化の総和を、抵抗値の変化として生じさせる。 As described above, the magnetic sensor 100 generates a magnetic field component in the X direction in the magnetoresistive elements excluding the fifth magnetoresistive element 125 by using the magnetic converging unit 110 for the magnetic fields input in the X, Y, and Z directions. Each is bent to cause a change in the resistance value. Therefore, when a magnetic field in an arbitrary direction is input to the magnetoresistive element 120 (that is, with respect to an input magnetic field expressed by a combination of X, Y, and Z axis components of the magnetic field), the magnetoresistive element 120 corresponds to the magnetic field in each direction The sum of the resistance value changes is generated as the resistance value change.

　磁気センサ１００は、一例として、任意の方向の磁場Ｂ（Ｂ_Ｘ，Ｂ_Ｙ，Ｂ_Ｚ）の入力に応じて、磁気抵抗素子１２０のそれぞれに次式で示すような抵抗値変化を生じさせる。ここで、Ｒ_０は、磁場の入力が零の場合のそれぞれの磁気抵抗素子の抵抗値を示す。また、Ｒ_１からＲ_５は、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５の抵抗値をそれぞれ示す。
　（数１）
　Ｒ_１＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ＋β・Ｂ_Ｙ＋γ・Ｂ_Ｚ）
　Ｒ_２＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ＋β・Ｂ_Ｙ－γ・Ｂ_Ｚ）
　Ｒ_３＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ－β・Ｂ_Ｙ－γ・Ｂ_Ｚ）
　Ｒ_４＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ－β・Ｂ_Ｙ＋γ・Ｂ_Ｚ）
　Ｒ_５＝Ｒ_０ As an example, the magnetic sensor 100 causes a resistance value change as shown by the following expression in each of the magnetoresistive elements 120 in response to an input of a magnetic field B (B _X , B _Y , B _Z ) in an arbitrary direction. Here, R ₀ indicates the resistance value of each magnetoresistive element when the input of the magnetic field is zero. R ₁ to R ₅ indicate the resistance values of the first magnetoresistance element 121 to the fifth magnetoresistance element 125, respectively.
(Equation 1)
R ₁ = R ₀ + δR · (α · B _X + β · B _Y + γ · B _Z )
R ₂ = R ₀ + δR · (α · B _X + β · B _Y −γ · B _Z )
R ₃ = R ₀ + δR · (α · B _X −β · B _Y −γ · B _Z )
R ₄ = R ₀ + δR · (α · B _X −β · B _Y + γ · B _Z )
R ₅ = R ₀

　磁気センサ１００は、磁気抵抗素子１２０にこのような抵抗値の変化が生じたことで、任意の方向の磁場Ｂを検出したと判断してもよい。また、磁気センサ１００は、それぞれの磁気抵抗素子の抵抗値から、入力された任意の方向の磁場ＢのＸＹＺ成分のそれぞれを算出してもよい。例えば、（数１）式を用いて次式の右辺を計算することで、左辺のＸ方向の磁場Ｂ_Ｘに関する式を取得することができる。
　（数２）
　４δＲ・α・Ｂ_Ｘ＝（Ｒ_１－Ｒ_５）＋（Ｒ_２－Ｒ_５）＋（Ｒ_３－Ｒ_５）＋（Ｒ_４－Ｒ_５） The magnetic sensor 100 may determine that the magnetic field B in an arbitrary direction has been detected due to such a change in the resistance value of the magnetoresistive element 120. Further, the magnetic sensor 100 may calculate each of the XYZ components of the input magnetic field B in any direction from the resistance value of each magnetoresistive element. For example, by calculating the right side of the following equation using Equation (1), an equation regarding the magnetic field B _{X in} the X direction on the left side can be obtained.
(Equation 2)
4δR · α · B _X = (R ₁ −R ₅ ) + (R ₂ −R ₅ ) + (R ₃ −R ₅ ) + (R ₄ −R ₅ )

　即ち、磁気センサ１００は、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５のそれぞれの抵抗値、およびδＲ・αの値を（数２）式に代入することで、磁場Ｂ_Ｘを算出することができる。同様に、次式のＹ方向の磁場Ｂ_Ｙに関する式を取得することができる。
　（数３）
　４δＲ・β・Ｂ_Ｙ＝（Ｒ_１－Ｒ_５）＋（Ｒ_２－Ｒ_５）－（Ｒ_３－Ｒ_５）－（Ｒ_４－Ｒ_５） That is, the magnetic sensor 100, by substituting the first magnetoresistive element 121 each resistance value of the fifth magneto resistance element 125, and the value of &Dgr; R · alpha in equation 2, and calculates the magnetic field B _X be able to. Similarly, the following equation regarding the Y-direction magnetic field _BY can be obtained.
(Equation 3)
4δR · β · B _Y = (R ₁ −R ₅ ) + (R ₂ −R ₅ ) − (R ₃ −R ₅ ) − (R ₄ −R ₅ )

　また、同様に、次式のＺ方向の磁場Ｂ_Ｚに関する式を取得することができる。
　（数４）
　４δＲ・γ・Ｂ_Ｚ＝（Ｒ_１－Ｒ_５）－（Ｒ_２－Ｒ_５）－（Ｒ_３－Ｒ_５）＋（Ｒ_４－Ｒ_５） Similarly, it is possible to obtain the expression for the magnetic field B _Z in the Z direction follows.
(Equation 4)
4δR · γ · B _Z = (R ₁ −R ₅ ) − (R ₂ −R ₅ ) − (R ₃ −R ₅ ) + (R ₄ −R ₅ )

　以上の説明において、任意の方向の磁場Ｂは、＋Ｘ方向、＋Ｙ方向、および＋Ｚ方向の磁場入力を例として説明したが、これに代えて、磁場入力が－Ｘ方向、－Ｙ方向、および－Ｚ方向となると、磁束の経路が反転して抵抗値の変化の方向も反転するが、（数２）から（数４）式の関係は保たれる。したがって、磁気センサ１００は、（数２）から（数４）までの式を用いることで、任意の方向の磁場Ｂのそれぞれの磁気抵抗素子の検出結果に基づき、磁場の各方向の成分を算出することができる。 In the above description, the magnetic field B in any direction has been described by taking the magnetic field input in the + X direction, the + Y direction, and the + Z direction as an example, but instead, the magnetic field input is in the −X direction, the −Y direction, and the − In the Z direction, the path of the magnetic flux is reversed and the direction of change in the resistance value is also reversed, but the relationship of Equations (2) to (4) is maintained. Therefore, the magnetic sensor 100 calculates the component of each direction of the magnetic field based on the detection result of each magnetoresistive element of the magnetic field B in an arbitrary direction by using the equations from (Equation 2) to (Equation 4). can do.

　なお、磁気収束部１１０が任意の方向の磁場Ｂの各成分を曲げて磁気抵抗素子１２０の第２方向に供給することを説明した。この場合、磁気抵抗素子１２０に入力する第２方向の磁場の成分は、Ｙ方向の位置に応じて大きさが異なることがあり、α、β、およびγは当該位置に応じて値が異なることがある。そこで、磁気センサ１００は、磁気抵抗素子１２０の使用領域におけるそれぞれの値の平均値を、α、β、およびγとして便宜的に用いてよい。 Note that it has been described that the magnetic converging unit 110 bends each component of the magnetic field B in an arbitrary direction and supplies it in the second direction of the magnetoresistive element 120. In this case, the magnitude of the magnetic field component in the second direction input to the magnetoresistive element 120 may vary depending on the position in the Y direction, and α, β, and γ may differ in value depending on the position. There is. Therefore, the magnetic sensor 100 may conveniently use the average value of each value in the usage region of the magnetoresistive element 120 as α, β, and γ.

　図３は、第１磁気抵抗素子１２１のＹ方向の位置に対する磁場変換率α、β、およびγの変化の概略構成例を示す。図３の横軸は、図１に示す第１磁気抵抗素子１２１のＹ方向の位置と対応している。より具体的には、第１磁気抵抗素子１２１の長さをＹ_０とすると、当該Ｙ方向の位置を０からＹ_０と示す。つまり、図１において、第１磁気抵抗素子１２１の－Ｙ方向側の端の位置が０で、第１磁気抵抗素子１２１の＋Ｙ方向側の端の位置がＹ_０である。また、図３の縦軸は、磁場変換率α、β、およびγを示す。理想的には、磁気収束部１１０は、磁気抵抗素子１２０に第２方向の均一の磁場を供給することが望ましく、この場合、磁場変換率α、β、およびγは略一定の値となる。図３は、磁場変換率α、β、およびγを、積分要素法による磁場数値解析にて求めた例を示す。 FIG. 3 shows a schematic configuration example of changes in the magnetic field conversion rates α, β, and γ with respect to the position of the first magnetoresistive element 121 in the Y direction. The horizontal axis in FIG. 3 corresponds to the position in the Y direction of the first magnetoresistive element 121 shown in FIG. More specifically, assuming that the length of the first magnetoresistive element 121 is Y ₀ , the position in the Y direction is indicated as 0 to Y ₀ . That is, in FIG. 1, at the position of the -Y direction end of the first magnetoresistive element 121 is 0, the position of the + Y direction side of the end of the first magnetoresistive element 121 is Y _0. The vertical axis in FIG. 3 indicates the magnetic field conversion rates α, β, and γ. Ideally, the magnetic converging unit 110 desirably supplies a uniform magnetic field in the second direction to the magnetoresistive element 120. In this case, the magnetic field conversion rates α, β, and γ are substantially constant values. FIG. 3 shows an example in which the magnetic field conversion rates α, β, and γ are obtained by magnetic field numerical analysis by the integral element method.

　ここで、磁場Ｂ_ＸおよびＢ_Ｚが磁気センサ１００に入力する方向は、第１磁気抵抗素子１２１の延伸方向と略垂直な方向なので、磁気収束部１１０が第１磁気抵抗素子１２１よりも十分に長ければ、第１磁気抵抗素子１２１のＹ方向の位置のほとんどで、略一定の面積密度の磁場を供給することができる。したがって、磁場変換率αおよびγは、位置０からＹ_０の間において、略一定の値となることがわかる。 Here, since the direction in which the magnetic fields B _X and B _Z are input to the magnetic sensor 100 is a direction substantially perpendicular to the extending direction of the first magnetoresistive element 121, the magnetic converging unit 110 is sufficiently more than the first magnetoresistive element 121. If the length is long, a magnetic field having a substantially constant area density can be supplied at most of the positions in the Y direction of the first magnetoresistive element 121. Therefore, it can be seen that the magnetic field conversion rates α and γ are substantially constant values between the positions 0 and Y ₀ .

　その一方、磁場Ｂ_Ｙが入力する方向は、第１磁気抵抗素子１２１の延伸方向と略同一なので、磁気収束部１１０が磁場Ｂ_Ｙを曲げて収束させ、かつ、磁気収束部１１０の外部に放出する過程における第２方向の磁場の成分が、第１磁気抵抗素子１２１に検知されることになる。例えば、図１に示す磁束の経路の一例のように、磁気収束部１１０は、磁束の経路を蛇行させるように変化させる。 On the other hand, since the direction in which the magnetic field _BY is input is substantially the same as the extending direction of the first magnetoresistive element 121, the magnetic converging unit 110 bends and converges the magnetic field _BY and emits it to the outside of the magnetic converging unit 110. In this process, the first magnetoresistive element 121 detects the magnetic field component in the second direction. For example, as in the example of the magnetic flux path shown in FIG. 1, the magnetic converging unit 110 changes the magnetic flux path to meander.

　図４は、第１磁気収束部１１１のＹ方向の断面の構成例を示す。図４は、図１に対応して、紙面の横方向をＹ方向、縦方向をＺ方向、垂直方向をＸ方向とする。図４の点線は、磁束の経路の一例を示す。第１磁気収束部１１１は、Ｙ方向の磁場Ｂ_Ｙを曲げて収束させ、収束させた磁場を外部へと放出する。図１および図４に示した磁束の経路の一例のように、第１磁気収束部１１１は、Ｙ方向に入力する磁場がある場合、端部においてその近傍の空間に存在する磁場を収束させ（即ち、曲げ）るので、当該端部における第２方向の磁場の成分がより大きくなる。 FIG. 4 shows a configuration example of a cross section in the Y direction of the first magnetic flux concentrator 111. 4, corresponding to FIG. 1, the horizontal direction of the paper is the Y direction, the vertical direction is the Z direction, and the vertical direction is the X direction. A dotted line in FIG. 4 shows an example of a magnetic flux path. The first magnetic flux concentrator 111, is converged by bending the magnetic field B _Y of the Y-direction, to release the was allowed to focusing magnetic externally. As an example of the magnetic flux path shown in FIG. 1 and FIG. 4, when there is a magnetic field input in the Y direction, the first magnetic converging unit 111 converges the magnetic field existing in the space near it at the end ( In other words, the magnetic field component in the second direction at the end portion becomes larger.

　このように、第１磁気収束部１１１は、第１磁気抵抗素子１２１に供給する第２方向の磁場の成分を一定に保持することはできない。即ち、第１磁気収束部１１１は、第１磁気抵抗素子１２１のＹ方向の位置に応じて変化する第２方向の磁場の成分を、当該第１磁気抵抗素子１２１に供給する。特に、感度を増加する目的でよりＹ方向の長さの長い第１磁気抵抗素子１２１を形成した場合、磁場変換率βは、第１磁気抵抗素子１２１の位置０からＹ_０の間において、略一定の値にはならない。 As described above, the first magnetic flux concentrator 111 cannot keep the magnetic field component in the second direction supplied to the first magnetoresistive element 121 constant. That is, the first magnetic flux concentrator 111 supplies the first magnetoresistive element 121 with a magnetic field component in the second direction that changes according to the position of the first magnetoresistive element 121 in the Y direction. In particular, when the first magnetoresistive element 121 having a longer length in the Y direction is formed for the purpose of increasing sensitivity, the magnetic field conversion rate β is approximately between the position 0 and Y ₀ of the first magnetoresistive element 121. It is not a constant value.

　また、磁気収束部１１０は、磁場を収束させる端部において第２方向の磁場の成分をより多く発生させるので、第１磁気抵抗素子１２１のＹ方向の位置が０近辺に対応する磁場変換率βの値がより大きくなる。磁場変換率βの増加に応じて、第１磁気抵抗素子１２１が検出できる磁場の成分が増加するので、磁場変換率βが大きいことは望ましい。しかしながら、磁場変換率βは、ある上限値を超えると、磁気抵抗素子の抵抗値がリニアな領域から外れさせてしまうことがある。 In addition, the magnetic converging unit 110 generates more magnetic field components in the second direction at the end for converging the magnetic field, so that the magnetic field conversion rate β corresponding to the position of the first magnetoresistive element 121 in the Y direction near zero. The value of becomes larger. Since the magnetic field component that can be detected by the first magnetoresistive element 121 increases as the magnetic field conversion rate β increases, it is desirable that the magnetic field conversion rate β is large. However, if the magnetic field conversion rate β exceeds a certain upper limit value, the resistance value of the magnetoresistive element may deviate from the linear region.

　特に、ＧＭＲおよびＴＭＲといった磁気抵抗素子は、入力磁場に対するダイナミックレンジがホール素子等の磁気センサに比べて狭い。即ち、このような磁気抵抗素子は、入力磁場に対して抵抗値が略線形に変化するリニアな領域が狭い。磁気センサの用途の中には、ある特定範囲の入力磁場に対して、リニアに出力しなければならない用途がある。磁気センサ１００のＹ方向の入力磁場に対する磁場変換率βは、図３に示すように、第１磁気抵抗素子１２１のＹ方向の位置０からＹ_０の範囲で、一様ではなく、特に、第１磁気抵抗素子１２１の位置が０の近辺で、磁場変換率βが急峻に増加している。即ち、第１磁気抵抗素子１２１の位置が０の近辺で、磁気センサ１００がＹ方向の入力磁場を第２方向に変換して第１磁気抵抗素子１２１に入力する磁場は、急峻に増加している。例えば、ある特定範囲の最大の磁場が磁気センサ１００のＹ方向に入力する場合、Ｙ方向の入力磁場を第２方向に変換して第１磁気抵抗素子１２１に入力する磁場が第１磁気抵抗素子１２１のもつリニアな領域から外れてしまう第１磁気抵抗素子１２１の一部分が生じてしまうことがあった。このとき、第１磁気抵抗素子１２１の一部分はリニアでない抵抗変化を示すため、磁気センサ１００はリニアリティを損なうことがあった。 In particular, magnetoresistive elements such as GMR and TMR have a narrow dynamic range with respect to an input magnetic field compared to a magnetic sensor such as a Hall element. That is, such a magnetoresistive element has a narrow linear region in which the resistance value changes substantially linearly with respect to the input magnetic field. Among the applications of magnetic sensors, there are applications that must output linearly for a certain range of input magnetic fields. The magnetic field conversion rate β with respect to the input magnetic field in the Y direction of the magnetic sensor 100 is not uniform in the range from the position 0 to Y ₀ of the first magnetoresistive element 121 in the Y direction, as shown in FIG. In the vicinity of the position of 1 magnetoresistive element 121 being 0, the magnetic field conversion rate β increases sharply. That is, when the position of the first magnetoresistive element 121 is in the vicinity of 0, the magnetic field input to the first magnetoresistive element 121 by the magnetic sensor 100 converting the input magnetic field in the Y direction to the second direction increases sharply. Yes. For example, when the maximum magnetic field in a specific range is input in the Y direction of the magnetic sensor 100, the magnetic field input to the first magnetoresistive element 121 by converting the input magnetic field in the Y direction into the second direction is the first magnetoresistive element. In some cases, a part of the first magnetoresistive element 121 deviates from the linear region of 121. At this time, since a part of the first magnetoresistive element 121 exhibits a non-linear resistance change, the magnetic sensor 100 may lose linearity.

　したがって、第１磁気抵抗素子１２１は、例えば図３の点線で示すように、磁場変換率βが予め定められた上限値を超えない範囲で用いることが望ましく、当該範囲を使用可能領域としていた。即ち、磁気センサ１００は、第１磁気抵抗素子１２１のうち、使用可能領域に対応する一部の領域の抵抗変化を、検出結果として用いていた。このように、磁気センサ１００は、長さＹ_０の第１磁気抵抗素子１２１を形成しても、全ての長さを用いて磁場Ｂ_Ｙを検出することが困難であった。 Therefore, it is desirable to use the first magnetoresistive element 121 in a range where the magnetic field conversion rate β does not exceed a predetermined upper limit value, for example, as indicated by a dotted line in FIG. That is, the magnetic sensor 100 uses the resistance change in a part of the first magnetoresistive element 121 corresponding to the usable area as a detection result. Thus, the magnetic sensor 100 also forms a first magnetoresistive element 121 of length Y _0, it is difficult to detect the magnetic field B _Y with all lengths.

　この場合、第１磁気抵抗素子１２１の使用可能領域に対応する一部の長さの間の抵抗値を取得すべく、一例として、第１磁気抵抗素子１２１が延伸する途中に電極を形成していた。図３は、第１磁気抵抗素子１２１の延伸方向の途中と当該素子のＹ_０側の端部との間（即ち、当該素子の使用可能領域）の抵抗を、抵抗測定器で測定して当該素子の一部の抵抗変化を取得する例を示す。以上において、第１磁気抵抗素子１２１を例に説明したが、他の磁気抵抗素子についても同様である。よって、このように使用することは磁気抵抗素子の実効長が短くなることから、それぞれの磁気抵抗素子のノイズが増大し、磁気センサ１００のノイズ増大を招いていた。 In this case, in order to obtain a resistance value between a part of the length corresponding to the usable area of the first magnetoresistive element 121, as an example, an electrode is formed while the first magnetoresistive element 121 is extended. It was. 3, between the middle and the Y ₀ side end of the element in the extending direction of the first magneto resistive element 121 (i.e., the available area of the element) resistance, was measured with a resistance measuring instrument in the The example which acquires the resistance change of a part of element is shown. The first magnetoresistive element 121 has been described above as an example, but the same applies to other magnetoresistive elements. Therefore, since the effective length of a magnetoresistive element becomes short by using in this way, the noise of each magnetoresistive element increased and the noise of the magnetic sensor 100 was increased.

　また、磁場変換率βが急峻に増加する位置（即ち、図３におけるＹ方向の位置が０近辺）において、磁場変換率βが上限値を超えないように調整することもできる。しかし、このような調整は、磁気抵抗素子の全ての領域を使用可能として用いることができるが、従来、平均化された磁場変換率βは、例えばαおよびγ等と比較して小さなものになり、検出感度の低下を招くことがあった。 Also, it is possible to adjust the magnetic field conversion rate β so that it does not exceed the upper limit at the position where the magnetic field conversion rate β sharply increases (that is, the position in the Y direction in FIG. 3 is near 0). However, such adjustment can be used with all regions of the magnetoresistive element usable, but conventionally, the averaged magnetic field conversion rate β is smaller than, for example, α and γ. The detection sensitivity may be reduced.

　そこで、本実施形態の磁気センサ１００は、磁気収束部１１０に磁気収束部材を加え、磁場変換率αおよびγの傾向を保ったまま、磁場変換率βの極端な増加を抑制して磁気抵抗素子の使用可能領域を増加させる。図５は、本実施形態に係る磁気センサ１００の第１の構成例を示す。図５は、磁気センサ１００のＺ方向から見た平面視の構成例を示す。磁気センサ１００は、第１磁気収束部１１１および第２磁気収束部１１２で構成される磁気収束部１１０と、第１磁気抵抗素子１２１と、第１磁気収束部材１３１とを備える。即ち、図５に示す本実施形態の磁気センサ１００は、磁気抵抗素子１２０として１つの第１磁気抵抗素子１２１を備える例を示す。 Therefore, the magnetic sensor 100 according to the present embodiment adds a magnetic converging member to the magnetic converging unit 110 and suppresses an extreme increase in the magnetic field conversion rate β while maintaining the tendency of the magnetic field conversion rates α and γ. Increase the usable area of FIG. 5 shows a first configuration example of the magnetic sensor 100 according to the present embodiment. FIG. 5 shows a configuration example of the magnetic sensor 100 in plan view as viewed from the Z direction. The magnetic sensor 100 includes a magnetic converging unit 110 composed of a first magnetic converging unit 111 and a second magnetic converging unit 112, a first magnetoresistive element 121, and a first magnetic converging member 131. That is, the magnetic sensor 100 of this embodiment shown in FIG. 5 shows an example in which one first magnetoresistive element 121 is provided as the magnetoresistive element 120.

　第１磁気収束部１１１は、第１方向に延伸する。第２磁気収束部１１２は、第１方向に延伸し、第１磁気収束部１１１の第１端部側よりも第１方向に延伸する。ここで、第１方向を図５の－Ｙ方向とする。即ち、第１磁気収束部１１１の－Ｙ方向側の端部を第１端部とする。また、第１磁気収束部１１１と第２磁気収束部１１２とは略同一形状であって、第１磁気収束部１１１が、第２磁気収束部１１２に対して、＋Ｙ方向にΔＹずらして形成される例を示す。 The first magnetic flux concentrator 111 extends in the first direction. The second magnetic flux concentrator 112 extends in the first direction and extends in the first direction relative to the first end side of the first magnetic concentrator 111. Here, the first direction is taken as the -Y direction in FIG. That is, the end on the −Y direction side of the first magnetic flux concentrator 111 is defined as the first end. Further, the first magnetic converging part 111 and the second magnetic converging part 112 have substantially the same shape, and the first magnetic converging part 111 is formed by being shifted by ΔY in the + Y direction with respect to the second magnetic converging part 112. An example is shown.

　図５において、第１磁気収束部１１１と第２磁気収束部１１２は、Ｚ方向から見た平面視で、それぞれ形状が長方形である例を示したが、これに代えて、第１方向に略平行な向きに長手方向をもつ四角形、平行四辺形、台形のいずれであってもよい。また、Ｚ方向から見た平面視で、磁気収束部の４つの角が直角になっているが、少なくとも１つの角が丸まっていたり、面取されていたりしてもよい。また、第１磁気収束部１１１と第２磁気収束部１１２は、各々が第１方向に平行であり、かつ、第１方向に平行な各々の長辺が略同一の長さを有しているが、各々の長辺が異なる長さであってもよい。また、第１磁気収束部１１１と第２磁気収束部１１２は、第２方向（Ｘ方向）に平行な各々の短辺が略同一の長さを有しているが、各々の短辺が異なる長さであってもよい。 In FIG. 5, the first magnetic converging unit 111 and the second magnetic converging unit 112 are each shown to have a rectangular shape in plan view as viewed from the Z direction. It may be any of a quadrilateral having a longitudinal direction in a parallel direction, a parallelogram, and a trapezoid. In addition, in the plan view viewed from the Z direction, the four corners of the magnetic converging portion are perpendicular, but at least one corner may be rounded or chamfered. Further, each of the first magnetic converging part 111 and the second magnetic converging part 112 is parallel to the first direction, and each long side parallel to the first direction has substantially the same length. However, each of the long sides may have a different length. Moreover, although the 1st magnetic focusing part 111 and the 2nd magnetic focusing part 112 have the short length of each short side parallel to a 2nd direction (X direction), each short side differs. It may be a length.

　第１磁気収束部１１１および第２磁気収束部１１２は、ＸＹ面に平行な面に形成される。第１磁気収束部１１１および第２磁気収束部１１２は、パーマロイ等の磁性材料で形成され、当該磁気収束部１１０近傍の磁力線の向きを変化させる。第１磁気収束部１１１および第２磁気収束部１１２は、例えば、Ｙ方向に入力する磁場Ｂ_Ｙを曲げてＸ方向の磁場成分を発生させ、当該Ｘ方向の磁場成分を第１磁気抵抗素子１２１に供給する。 The first magnetic converging part 111 and the second magnetic converging part 112 are formed on a plane parallel to the XY plane. The first magnetic converging part 111 and the second magnetic converging part 112 are made of a magnetic material such as permalloy, and change the direction of the lines of magnetic force in the vicinity of the magnetic converging part 110. For example, the first magnetic converging unit 111 and the second magnetic converging unit 112 generate a magnetic field component in the X direction by bending the magnetic field _BY input in the Y direction, and the first magnetic resistance element 121 converts the magnetic field component in the X direction. To supply.

　第１磁気抵抗素子１２１は、Ｚ方向から見た平面視で、第１磁気収束部１１１および第２磁気収束部１１２の間で第１方向に延伸し、第１方向と垂直な第２方向の磁場を検知する。即ち、第１磁気抵抗素子１２１は、＋Ｘ方向および－Ｘ方向を含む第２方向の磁場を検知する。第１磁気抵抗素子１２１は、当該第２方向の磁場によって、例えば電気抵抗率が十％から数十％程度変化する磁気抵抗比を有する（巨大磁気抵抗）。第１磁気抵抗素子１２１は、一例として、非磁性層、反強磁性体層および強磁性体層を含む多層薄膜で形成される。 The first magnetoresistive element 121 extends in the first direction between the first magnetic converging unit 111 and the second magnetic converging unit 112 in a plan view as viewed from the Z direction, and extends in the second direction perpendicular to the first direction. Detect magnetic field. That is, the first magnetoresistive element 121 detects a magnetic field in the second direction including the + X direction and the −X direction. The first magnetoresistive element 121 has a magnetoresistive ratio in which, for example, the electrical resistivity changes by about 10% to several tens% by the magnetic field in the second direction (giant magnetoresistance). For example, the first magnetoresistive element 121 is formed of a multilayer thin film including a nonmagnetic layer, an antiferromagnetic layer, and a ferromagnetic layer.

　第１磁気抵抗素子１２１は、第２磁気収束部１１２よりも第１磁気収束部１１１までの距離が小さい。つまり、第１磁気抵抗素子１２１は、第１磁気収束部１１１に近接して配置される。本実施例において、第１磁気抵抗素子１２１は、Ｚ方向から見た平面視では長方形で示される直方体の形状で形成された例を示す。また、本実施例では、各磁気抵抗素子が巨大磁気抵抗（ＧＭＲ：Ｇｉａｎｔ　Ｍａｇｎｅｔｏ－Ｒｅｓｉｓｔａｎｃｅ）素子である場合について示すが、ＧＭＲ素子に限らず、異方向性磁気抵抗（ＡＭＲ：Ａｎｉｓｏｔｒｏｐｉｃ　Ｍａｇｎｅｔｏ－Ｒｅｓｉｓｔａｎｃｅ）素子やトンネル磁気抵抗（ＴＭＲ：Ｔｕｎｎｅｌ　Ｍａｇｎｅｔｏ－Ｒｅｓｉｓｔａｎｃｅ）素子で構成してもよい。 The first magnetoresistive element 121 has a smaller distance to the first magnetic converging unit 111 than the second magnetic converging unit 112. That is, the first magnetoresistive element 121 is disposed in the vicinity of the first magnetic converging unit 111. In this embodiment, the first magnetoresistive element 121 is formed in the shape of a rectangular parallelepiped that is rectangular when viewed in the Z direction. In the present embodiment, each magnetoresistive element is a giant magnetoresistive (GMR) element. However, the magnetoresistive element is not limited to a GMR element, and an anisotropic magnetoresistive (AMR) element is used. You may comprise with an element and a tunnel magnetoresistive (TMR: Tunnel Magneto-Resistance) element.

　また、図５において、第１磁気抵抗素子１２１は、第１磁気収束部１１１と第２磁気収束部１１２とが第２方向において重なる第１方向の範囲で、第１磁気収束部１１１と第２磁気収束部１１２との間に配置される例を示す。この場合、Ｘ方向に入力する磁場Ｂ_Ｘと、Ｙ方向に入力する磁場Ｂ_Ｙと、Ｚ方向に入力する磁場Ｂ_Ｚと、が第２方向（Ｘ方向）に変換され、第２方向（Ｘ方向）に変換された磁場が第１磁気抵抗素子１２１により効果的に入力することができる。図５において、第１磁気抵抗素子１２１は、第１磁気収束部１１１と第２磁気収束部１１２とが第２方向においてちょうど重なる第１方向の長さをもち、第１磁気収束部１１１と第２磁気収束部１１２との間に配置される例を示す。 In FIG. 5, the first magnetoresistive element 121 includes a first magnetic concentrator 111 and a second magnetic concentrator 111 in a first direction range in which the first magnetic concentrator 111 and the second magnetic concentrator 112 overlap in the second direction. The example arrange | positioned between the magnetic convergence parts 112 is shown. In this case, the magnetic field B _X input to the X-direction, and the magnetic field B _Y to be input to the Y-direction, and the magnetic field B _Z to enter in the Z direction, but is converted in a second direction (X-direction), second direction (X The first magnetic resistance element 121 can effectively input the magnetic field converted into (direction). In FIG. 5, the first magnetoresistive element 121 has a length in the first direction in which the first magnetic converging part 111 and the second magnetic converging part 112 overlap in the second direction. The example arrange | positioned between 2 magnetic convergence parts 112 is shown.

　さらに、第１磁気抵抗素子１２１は、平板状であることが好ましい。第１磁気抵抗素子１２１の形状は、Ｚ方向から見た平面視で、矩形に限らず、例えば、四角形、正方形、平行四辺形、台形、三角形、多角形、円形、および楕円形のいずれであってもよい。また、第１方向に磁気抵抗素子を小分けに分割区分してそれらをメタル配線とで交互に接続した一連の複数の磁気抵抗素子は、１かたまりの磁気抵抗素子として見做すことができる。言い換えると、例えば、第１磁気抵抗素子１２１は、１つの磁気抵抗素子に限らず、２つ以上の磁気抵抗素子をメタル配線で接続して形成されてもよい。 Furthermore, the first magnetoresistive element 121 is preferably flat. The shape of the first magnetoresistive element 121 is not limited to a rectangle in a plan view as viewed from the Z direction, and may be any of a square, a square, a parallelogram, a trapezoid, a triangle, a polygon, a circle, and an ellipse, for example. May be. Further, a series of a plurality of magnetoresistive elements in which the magnetoresistive elements are subdivided in the first direction and are alternately connected by metal wirings can be regarded as a single magnetoresistive element. In other words, for example, the first magnetoresistive element 121 is not limited to one magnetoresistive element, and may be formed by connecting two or more magnetoresistive elements with metal wiring.

　第１磁気収束部材１３１は、第１磁気収束部１１１の第１方向側（－Ｙ方向側）の第１端部に接続され、第１方向から見て、または平面視で、第１端部から第１磁気抵抗素子１２１側に突出して形成される。第１磁気収束部材１３１は、例えば、第１磁気収束部１１１の最大幅（第２方向の長さの最大値）よりも第１磁気抵抗素子側に突出するように形成される。また、第１磁気収束部材１３１は、第１方向から見て、第１端部から第２磁気収束部１１２側（－Ｘ方向側）および／または第２磁気収束部１１２とは反対側（＋Ｘ方向側）へと延伸する。この場合、第１磁気収束部材１３１は、Ｚ方向から見た平面視で、第１方向において第１磁気抵抗素子１２１と重なる位置まで延伸してよい。 The first magnetic flux concentrator member 131 is connected to the first end of the first magnetic flux concentrator 111 on the first direction side (−Y direction side), and viewed from the first direction or in plan view, To the first magnetoresistive element 121 side. For example, the first magnetic flux concentrator member 131 is formed to protrude to the first magnetoresistive element side with respect to the maximum width (maximum value of the length in the second direction) of the first magnetic flux concentrator 111. Further, the first magnetic flux concentrator 131 is viewed from the first end with respect to the second magnetic flux concentrator 112 side (−X direction side) and / or the side opposite to the second magnetic concentrator 112 (+ X). (Direction side). In this case, the first magnetic flux concentrator member 131 may extend to a position where it overlaps with the first magnetoresistive element 121 in the first direction in a plan view as viewed from the Z direction.

　また、第１磁気収束部材１３１は、第１方向と垂直な断面が第１磁気収束部１１１の第１端部における第１方向と垂直な断面よりも大きい。また、第１磁気収束部材１３１は、Ｚ方向から見た平面視で、多角形の形状を有してもよい。図５において、第１磁気収束部材１３１は、Ｚ方向から見た平面視では第２方向に長辺が延伸する長方形で示される、直方体の形状で形成された例を示す。第１磁気収束部材１３１は、第１磁気収束部１１１と略同一の磁性材料で形成されてよい。 Further, the first magnetic flux concentrator member 131 has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction at the first end of the first magnetic flux concentrator 111. Further, the first magnetic flux concentrator member 131 may have a polygonal shape in a plan view viewed from the Z direction. In FIG. 5, the 1st magnetic flux concentrator member 131 shows the example formed in the shape of the rectangular parallelepiped shown by the rectangle which a long side extends | stretches in a 2nd direction in the planar view seen from the Z direction. The first magnetic flux concentrator member 131 may be formed of substantially the same magnetic material as the first magnetic flux concentrator 111.

　図５において、第２磁気収束部１１２の第１方向側（－Ｙ方向側）の端部は、第１磁気収束部１１１の第１端部に接続する第１磁気収束部材１３１の第１方向側（－Ｙ方向側）の端部よりも延伸している。また、第１磁気収束部１１１の第１方向とは反対側（＋Ｙ方向側）の端部は、第２磁気収束部１１２の第１方向とは反対側（＋Ｙ方向側）の端部よりも延伸している。こうすることで、磁気センサ１００に＋Ｙ方向に入力する磁場Ｂ_Ｙは、図５の点線で示すように、第２磁気収束部１１２に収束され、第１磁気抵抗素子１２１を横切り、第１磁気収束部１１１を通る磁路を形成する。 In FIG. 5, the end portion on the first direction side (−Y direction side) of the second magnetic focusing portion 112 is the first direction of the first magnetic focusing member 131 connected to the first end portion of the first magnetic focusing portion 111. It extends beyond the end on the side (−Y direction side). Further, the end of the first magnetic converging part 111 opposite to the first direction (+ Y direction side) is more than the end of the second magnetic converging part 112 opposite to the first direction (+ Y direction side). Stretched. As a result, the magnetic field _BY input to the magnetic sensor 100 in the + Y direction is converged to the second magnetic converging unit 112 as shown by the dotted line in FIG. A magnetic path passing through the converging part 111 is formed.

　以上のような磁気センサ１００は、＋Ｙ方向に平行に入力される磁場Ｂ_Ｙに応じて、第１磁気抵抗素子１２１にＸ方向の磁場成分を発生させる。第１磁気抵抗素子１２１は、発生したＸ方向の磁場成分を＋β・Ｂ_Ｙとすると、＋δＲ・β・Ｂ_Ｙの抵抗値変化を生じさせる。即ち、磁気センサ１００の磁気抵抗素子１２０は、磁場Ｂ_Ｙの大きさに応じて、抵抗値を変化させることができる。ここで、βは、磁気収束部１１０がＹ方向に入力する磁場Ｂ_Ｙを第２方向の磁場の成分に変換する磁場変換率を示し、言い換えると、Ｙ方向に入力する磁場Ｂ_Ｙの大きさに対して、第１磁気抵抗素子１２１に入力するＸ方向の磁場の大きさの割合を示す。βは、０以上の値をとる。δＲは、磁気抵抗素子の磁気感度に相当し、Ｘ方向の磁場に対する第１磁気抵抗素子１２１の抵抗変化量を示す。 The magnetic sensor 100 as described above causes the first magnetoresistive element 121 to generate a magnetic field component in the X direction according to the magnetic field _BY input in parallel to the + Y direction. The first magnetoresistive element 121 causes a change in resistance value of + δR · β · _BY , assuming that the generated magnetic field component in the X direction is + β · _BY . That is, the resistance value of the magnetoresistive element 120 of the magnetic sensor 100 can be changed according to the magnitude of the magnetic field _BY . Here, β indicates a magnetic field conversion rate for converting the magnetic field _BY input in the Y direction by the magnetic converging unit 110 into a magnetic field component in the second direction, in other words, the magnitude of the magnetic field _BY input in the Y direction. , The ratio of the magnitude of the magnetic field in the X direction input to the first magnetoresistive element 121 is shown. β takes a value of 0 or more. δR corresponds to the magnetic sensitivity of the magnetoresistive element, and indicates the resistance change amount of the first magnetoresistive element 121 with respect to the magnetic field in the X direction.

　図６は、本実施形態に係る磁気センサ１００を＋Ｙ方向に見た構成例を示す。図６は、図５に対して、紙面の横方向をＸ方向、縦方向をＺ方向、垂直方向をＹ方向とする。図６は、基板２０の一方の面に形成された磁気センサ１００の一例を示す。 FIG. 6 shows a configuration example when the magnetic sensor 100 according to the present embodiment is viewed in the + Y direction. 6, with respect to FIG. 5, the horizontal direction of the drawing is the X direction, the vertical direction is the Z direction, and the vertical direction is the Y direction. FIG. 6 shows an example of the magnetic sensor 100 formed on one surface of the substrate 20.

　第１磁気抵抗素子１２１は、例えば、基板２０の一方の面に形成された絶縁層３０の内部に形成される。即ち、第１磁気抵抗素子１２１は、基板２０および磁気収束部１１０とはそれぞれ電気的に絶縁されて形成される。 The first magnetoresistive element 121 is formed, for example, inside the insulating layer 30 formed on one surface of the substrate 20. That is, the first magnetoresistive element 121 is formed so as to be electrically insulated from the substrate 20 and the magnetic converging unit 110.

　このような第１磁気抵抗素子１２１を内部に有する絶縁層３０は、一例として、基板２０の一方の面に絶縁膜を形成し、当該絶縁膜の上面に第１磁気抵抗素子１２１を形成し、第１磁気抵抗素子１２１が形成された絶縁膜の上面に更に絶縁膜を形成することで形成される。絶縁層３０は、このように、複数の絶縁膜等によって形成されてよい。第１磁気収束部１１１および第２磁気収束部１１２は、絶縁層３０の上面に形成される。このように、第１磁気収束部１１１および第２磁気収束部１１２は、一例として、第１磁気抵抗素子１２１が形成される面と平行で、かつ、異なる面に形成される。また、図６では、第１磁気収束部１１１と第２磁気収束部１１２のＺ方向の厚みが揃っているが、各々の厚みが不揃いであってもよい。 As an example, the insulating layer 30 having the first magnetoresistive element 121 therein includes an insulating film formed on one surface of the substrate 20, and the first magnetoresistive element 121 is formed on the upper surface of the insulating film. The first magnetoresistive element 121 is formed by further forming an insulating film on the upper surface of the insulating film. As described above, the insulating layer 30 may be formed of a plurality of insulating films or the like. The first magnetic converging part 111 and the second magnetic converging part 112 are formed on the upper surface of the insulating layer 30. Thus, the 1st magnetic converging part 111 and the 2nd magnetic converging part 112 are formed in a different surface in parallel with the surface in which the 1st magnetoresistive element 121 is formed as an example. Moreover, in FIG. 6, although the thickness of the 1st magnetic converging part 111 and the 2nd magnetic converging part 112 is equal in the Z direction, each thickness may be uneven.

　磁気センサ１００は、例えば、＋Ｘ方向に平行に入力される磁場Ｂ_Ｘを、図６の点線で示すように変化させる。即ち、第１磁気抵抗素子１２１は、＋δＲ・α・Ｂ_Ｘの抵抗値変化をそれぞれ生じさせる。ここで、αは、磁気収束部１１０がＸ方向に入力する磁場Ｂ_Ｘを第１磁気抵抗素子１２１が検出する第２方向の磁場の成分に変換する磁場変換率を示し、言い換えると、Ｘ方向に入力する磁場Ｂ_Ｘの大きさに対して、第１磁気抵抗素子１２１に入力するＸ方向の磁場の大きさの割合を示す。αは、０以上の値をとる。 The magnetic sensor 100 is, for example, + a magnetic field B _X input in parallel to the X-direction, is changed as shown by a dotted line in FIG. That is, the first magneto resistive element 121 produces + δR · α · _{B X} change in resistance, respectively. Here, alpha denotes a magnetic field conversion to convert a magnetic field B _X of the magnetic flux concentrator 110 is input to the X direction component of the second direction of the magnetic field which the first magnetoresistive element 121 is detected, in other words, X direction shown with respect to the size of the magnetic field B _X to enter, the ratio of the size of the X-direction of the magnetic field to be input to the first magneto resistive element 121. α takes a value of 0 or more.

　また、磁気センサ１００は、例えば、＋Ｚ方向に平行に入力される磁場Ｂ_Ｚを、図６の実線に示すように変化させる。即ち、磁気収束部１１０は、磁場Ｂ_Ｚの入力に応じて、第１磁気抵抗素子１２１にＸ方向の磁場成分を発生させる。第１磁気抵抗素子１２１は、発生したＸ方向の磁場成分を＋γ・Ｂ_Ｚとすると、＋δＲ・γ・Ｂ_Ｚの抵抗値変化を生じさせる。ここで、γは、磁気収束部１１０がＺ方向に入力する磁場Ｂ_Ｚを２方向の磁場の成分に変換する磁場変換率を示し、言い換えると、Ｚ方向に入力する磁場Ｂ_Ｚの大きさに対して、第１磁気抵抗素子１２１に入力するＸ方向の磁場の大きさの割合を示す。γは、０以上の値をとる。 The magnetic sensor 100 is, for example, + Z direction of the magnetic field B _Z which is input in parallel, changing as shown in solid line in FIG. That is, the magnetic flux concentrator 110, in response to the input of the magnetic field B _Z, generating X-direction magnetic field component in the first magnetoresistive element 121. The first magnetoresistive element 121, when the generated X-direction magnetic field component and + γ · B _Z, causing a change in resistance + δR · γ · B _Z. Here, γ represents a magnetic field conversion rate for converting the magnetic field B _Z input by the magnetic converging unit 110 in the Z direction into a magnetic field component in two directions, in other words, the magnitude of the magnetic field B _Z input in the Z direction. On the other hand, the ratio of the magnitude of the magnetic field in the X direction input to the first magnetoresistive element 121 is shown. γ takes a value of 0 or more.

　以上のように、磁気センサ１００は、Ｘ、Ｙ、およびＺ方向に入力する磁場を、第１磁気収束部１１１、第２磁気収束部１１２、および第１磁気収束部材１３１を用いて第１磁気抵抗素子１２１に第２方向の磁場成分が発生するようにそれぞれ曲げ、第１磁気抵抗素子１２１に抵抗値の変化を生じさせる。磁気センサ１００は、任意の方向の磁場が入力した場合、各方向の磁場に応じた抵抗値変化の総和を、抵抗値の変化として生じさせる。 As described above, the magnetic sensor 100 uses the first magnetic converging unit 111, the second magnetic converging unit 112, and the first magnetic converging member 131 to apply the first magnetic field to the magnetic fields input in the X, Y, and Z directions. The resistance element 121 is bent so that a magnetic field component in the second direction is generated, and the resistance value of the first magnetoresistance element 121 is changed. When a magnetic field in an arbitrary direction is input, the magnetic sensor 100 generates a total resistance value change corresponding to the magnetic field in each direction as a resistance value change.

　磁気センサ１００は、一例として、任意の方向の磁場Ｂ（Ｂ_Ｘ，Ｂ_Ｙ，Ｂ_Ｚ）に対して、第１磁気抵抗素子１２１に次式で示すような抵抗値変化を生じさせる。ここで、Ｒ_０は、磁場の入力が零の場合のそれぞれの磁気抵抗素子の抵抗値を示す。
　（数５）
　Ｒ_１＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ＋β・Ｂ_Ｙ＋γ・Ｂ_Ｚ） As an example, the magnetic sensor 100 causes the first magnetoresistive element 121 to change a resistance value as represented by the following equation with respect to a magnetic field B (B _X , B _Y , B _Z ) in an arbitrary direction. Here, R ₀ indicates the resistance value of each magnetoresistive element when the input of the magnetic field is zero.
(Equation 5)
R ₁ = R ₀ + δR · (α · B _X + β · B _Y + γ · B _Z )

　本実施形態の磁気センサ１００は、第１磁気抵抗素子１２１にこのような抵抗値の変化が生じたことで、任意の方向の磁場Ｂを検出したと判断することができる。即ち、磁気センサ１００は、検出すべき磁場の方向に対応して配置することなく、任意の方向の磁場Ｂの有無を検出することができる。このように、磁気センサ１００は、小型で、かつ、配置方向の制限がほとんどないので、機器に容易に組み込むことができる。 The magnetic sensor 100 of the present embodiment can determine that the magnetic field B in any direction has been detected due to such a change in the resistance value of the first magnetoresistive element 121. That is, the magnetic sensor 100 can detect the presence or absence of the magnetic field B in an arbitrary direction without being arranged corresponding to the direction of the magnetic field to be detected. As described above, the magnetic sensor 100 is small in size and has almost no restriction on the arrangement direction, and can be easily incorporated into a device.

　図７は、本実施形態に係る第１磁気抵抗素子１２１のＹ方向の位置に対する磁場変換率α、β、およびγの変化の概略構成例を示す。図７の横軸は、図５に示す第１磁気抵抗素子１２１のＹ方向の位置と対応している。より具体的には、第１磁気抵抗素子１２１の長さをＹ_０とすると、当該Ｙ方向の位置を０からＹ_０と示す。つまり、図５において、第１磁気抵抗素子１２１の－Ｙ方向側の端の位置が０で、第１磁気抵抗素子１２１の＋Ｙ方向側の端の位置がＹ_０である。また、図７の縦軸は、磁場変換率α、β、およびγを示す。磁場変換率α、β、およびγは、積分要素法による磁場数値解析にて求めた。 FIG. 7 shows a schematic configuration example of changes in the magnetic field conversion rates α, β, and γ with respect to the position in the Y direction of the first magnetoresistive element 121 according to the present embodiment. The horizontal axis in FIG. 7 corresponds to the position in the Y direction of the first magnetoresistive element 121 shown in FIG. More specifically, assuming that the length of the first magnetoresistive element 121 is Y ₀ , the position in the Y direction is indicated as 0 to Y ₀ . That is, in FIG. 5, at the position of the -Y direction end of the first magnetoresistive element 121 is 0, the position of the + Y direction side of the end of the first magnetoresistive element 121 is Y _0. Moreover, the vertical axis | shaft of FIG. 7 shows magnetic field conversion rate (alpha), (beta), and (gamma). The magnetic field conversion rates α, β, and γ were determined by magnetic field numerical analysis by the integral element method.

　磁場Ｂ_ＸおよびＢ_Ｚが磁気センサ１００に入力する方向は、第１磁気抵抗素子１２１の延伸方向と略垂直な方向なので、磁気収束部１１０が第１磁気抵抗素子１２１よりも十分に長ければ、第１磁気抵抗素子１２１のＹ方向の位置のほとんどで、略一定の面積密度の磁場を供給することができる。したがって、磁場変換率αおよびγは、位置０からＹ_０の間において、略一定の値となる。 The direction in which the magnetic fields B _X and B _Z are input to the magnetic sensor 100 is a direction that is substantially perpendicular to the extending direction of the first magnetoresistive element 121. Therefore, if the magnetic converging unit 110 is sufficiently longer than the first magnetoresistive element 121, A magnetic field having a substantially constant area density can be supplied at almost the position in the Y direction of the first magnetoresistive element 121. Therefore, the magnetic field conversion rates α and γ are substantially constant values between the positions 0 and Y ₀ .

　なお、横軸Ｙ＝０近傍で磁場変換率αおよびγが減少しているのは、第１磁気収束部材１３１によるものである。すなわち、第１磁気収束部材１３１が＋Ｘ方向に入力する磁場Ｂｘと、＋Ｚ方向に入力する磁場Ｂｚを収束して、第１磁気抵抗素子１２１の第１方向側の端部（－Ｙ方向側）へ供給される＋Ｘ方向の磁場成分を減少させていることによるものである。しかしながらこの影響は磁場変換率βの変動に比べて小さく、磁場変換率αおよびγは第１磁気抵抗素子１２１において略一定の値となる。 Note that the magnetic field conversion ratios α and γ are reduced near the horizontal axis Y = 0 because of the first magnetic converging member 131. That is, the first magnetic converging member 131 converges the magnetic field Bx input in the + X direction and the magnetic field Bz input in the + Z direction, and ends the first magnetoresistive element 121 on the first direction side (−Y direction side). This is because the magnetic field component in the + X direction supplied to is reduced. However, this influence is small compared to the fluctuation of the magnetic field conversion rate β, and the magnetic field conversion rates α and γ become substantially constant values in the first magnetoresistive element 121.

　磁場Ｂ_Ｙが入力する方向は、第１磁気抵抗素子１２１の延伸方向と略同一なので、第１磁気収束部１１１が磁場Ｂ_Ｙを曲げて収束させ、かつ、第１磁気収束部１１１の外部に放出する過程における第２方向の磁場の成分が、第１磁気抵抗素子１２１に検知されることになる。 Since the direction in which the magnetic field _BY is input is substantially the same as the extending direction of the first magnetoresistive element 121, the first magnetic converging unit 111 bends and converges the magnetic field _BY , and is outside the first magnetic converging unit 111. The component of the magnetic field in the second direction in the process of emission is detected by the first magnetoresistive element 121.

　図８は、本実施形態に係る第１磁気収束部１１１のＹ方向の断面の構成例を示す。図８の点線は、磁束の経路の一例を示す。第１磁気収束部材１３１が無い場合、Ｙ方向に入力する磁場があると、第１磁気収束部１１１の第１端部に、その近傍の空間に存在する磁場が収束（集中）する。これによって、第１磁気収束部１１１の第１端部に近い第１磁気抵抗素子１２１のＹ方向の位置が０の近辺では、第１磁気抵抗素子１２１に第２方向で入力する磁場が増大し、磁場変換率βが急峻に増大していた。これに対し、第１磁気収束部１１１の第１端部に第１磁気収束部材１３１を接続する場合、図８に示すように、Ｙ方向に入力する磁場があっても、第１磁気収束部材１３１に、その近傍の空間に存在する磁場が収束（集中）するので、第１磁気収束部１１１の第１端部に近い第１磁気抵抗素子１２１のＹ方向の位置が０の近辺では、第１磁気抵抗素子１２１に第２方向で入力する磁場が減少し、磁場変換率βが低減することができる。図８は、ＹＺ平面で見た、第１磁気収束部材１３１に、その近傍に存在する磁場が収束（集中）する様子を示したものであるが、図示にはないが、図５のようなＸＹ平面で見ても、第１磁気収束部１１１の第１端部ではなく、第１磁気抵抗素子１２１側に突出した第１磁気収束部材１３１に、その近傍に存在する磁場が収束（集中）することが分かっている。 FIG. 8 shows a configuration example of a cross section in the Y direction of the first magnetic flux concentrator 111 according to the present embodiment. A dotted line in FIG. 8 shows an example of a magnetic flux path. If there is no first magnetic flux concentrator member 131 and there is a magnetic field input in the Y direction, the magnetic field existing in the space near the first magnetic flux convergent portion 111 converges (concentrates) at the first end of the first magnetic flux convergent portion 111. As a result, the magnetic field input to the first magnetoresistive element 121 in the second direction increases when the position of the first magnetoresistive element 121 near the first end of the first magnetic flux concentrator 111 is near zero in the Y direction. The magnetic field conversion rate β increased sharply. In contrast, when the first magnetic flux concentrator member 131 is connected to the first end of the first magnetic flux concentrator 111, the first magnetic flux concentrator member is present even if there is a magnetic field input in the Y direction, as shown in FIG. Since the magnetic field existing in the space in the vicinity of 131 converges (concentrates) on 131, the first magnetoresistive element 121 close to the first end of the first magnetic converging part 111 has a position near 0 in the Y direction. The magnetic field input to the 1 magnetoresistive element 121 in the second direction is reduced, and the magnetic field conversion rate β can be reduced. FIG. 8 shows a state in which the magnetic field existing in the vicinity of the first magnetic focusing member 131 converges (concentrates) on the first magnetic focusing member 131 as seen in the YZ plane. Even in the XY plane, the magnetic field existing in the vicinity of the first magnetic converging member 131 protruding toward the first magnetoresistive element 121 is converged (concentrated) instead of the first end of the first magnetic converging unit 111. I know you will.

　以上のように、第１磁気収束部材１３１は、第１磁気収束部１１１と並走する第１磁気抵抗素子１２１に、急峻に増大した磁場の第２方向成分が入力することを防止して、第１磁気抵抗素子１２１の磁場変換率βが予め定められた上限値を超えない範囲とすることができる。したがって、磁気センサ１００は、形成した長さＹ_０の第１磁気抵抗素子１２１の全部の長さを用いて磁場Ｂ_Ｙを検出することができ、検出感度を向上させることができる。図７は、第１磁気抵抗素子１２１の一方の端と他方の端との間（即ち、当該素子の使用可能領域）の抵抗を、抵抗測定器で測定して当該素子の一部の抵抗変化を取得する例を示す。 As described above, the first magnetic flux concentrator 131 prevents the steeply increased second direction component of the magnetic field from being input to the first magnetoresistive element 121 running in parallel with the first magnetic flux concentrator 111. The magnetic field conversion rate β of the first magnetoresistive element 121 can be set in a range that does not exceed a predetermined upper limit value. Therefore, the magnetic sensor 100 can detect a magnetic field B _Y using the entire length of the first magnetoresistive element 121 of length Y ₀ formed, it is possible to improve the detection sensitivity. FIG. 7 shows the resistance change of a part of the first magnetoresistive element 121 by measuring the resistance between one end and the other end (that is, the usable area of the element) with a resistance measuring instrument. An example of acquiring

　図９は、本実施形態に係る磁気センサ１００の第１の変形例を示す。図９は、第１の変形例の磁気センサ１００のＺ方向から見た平面視の構成例であり、本変形例の磁気センサ１００において、図５に示された本実施形態に係る磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。また、図１０は、本実施形態に係る磁気センサ１００の第１の変形例の＋Ｙ方向にみた構成例を示す。図１０は、図９に対応して、紙面の横方向をＸ方向、縦方向をＺ方向、垂直方向をＹ方向とした図であり、図６に示された本実施形態に係る磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。 FIG. 9 shows a first modification of the magnetic sensor 100 according to this embodiment. FIG. 9 is a configuration example in plan view of the magnetic sensor 100 of the first modification viewed from the Z direction. In the magnetic sensor 100 of the present modification, the magnetic sensor 100 according to the present embodiment illustrated in FIG. 5 is illustrated. Components that are substantially the same as those in FIG. FIG. 10 shows a configuration example of the first modified example of the magnetic sensor 100 according to the present embodiment viewed in the + Y direction. FIG. 10 is a diagram corresponding to FIG. 9 in which the horizontal direction of the paper is the X direction, the vertical direction is the Z direction, and the vertical direction is the Y direction. The magnetic sensor 100 according to the present embodiment shown in FIG. Components that are substantially the same as those in FIG.

　本変形例の磁気センサ１００は、磁気収束部１１０が第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３を有し、磁気抵抗素子１２０が第１磁気抵抗素子１２１から第５磁気抵抗素子１２５までの５つの素子を有し、第１磁気収束部材１３１と、第２磁気収束部材１３２と、第３磁気収束部材１３３とを備える例を示す。 In the magnetic sensor 100 of this modification, the magnetic converging unit 110 includes a first magnetic converging unit 111, a second magnetic converging unit 112, and a third magnetic converging unit 113, and the magnetoresistive element 120 is the first magnetoresistive element 121. To 5th magnetoresistive element 125, an example including a first magnetic flux concentrator member 131, a second magnetic flux concentrator member 132, and a third magnetic flux concentrator member 133 is shown.

　第１磁気収束部１１１は、第１方向に延伸する。第２磁気収束部１１２は、第１方向に延伸し、第１磁気収束部１１１の第１端部側よりも第１方向に延伸する。ここで、第１方向を図９の－Ｙ方向とする。即ち、第１磁気収束部１１１の－Ｙ方向側の端部を第１端部とする。 The first magnetic flux concentrator 111 extends in the first direction. The second magnetic flux concentrator 112 extends in the first direction and extends in the first direction relative to the first end side of the first magnetic concentrator 111. Here, the first direction is taken as the −Y direction in FIG. That is, the end on the −Y direction side of the first magnetic flux concentrator 111 is defined as the first end.

　第３磁気収束部１１３は、第１方向に延伸し、第１磁気収束部１１１の第１端部側よりも第１方向に延伸され、第１磁気収束部１１１に対し第２磁気収束部１１２とは反対側に設けられる。即ち、第３磁気収束部１１３は、第１方向に延伸し、ＸＹ面に平行な、第１磁気収束部１１１および第２磁気収束部１１２が形成される面に形成される。図９において、第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３は、略同一形状に形成され、Ｘ方向に等間隔に配列される例を示す。 The third magnetic focusing unit 113 extends in the first direction, extends in the first direction from the first end side of the first magnetic focusing unit 111, and the second magnetic focusing unit 112 with respect to the first magnetic focusing unit 111. It is provided on the opposite side. That is, the third magnetic flux concentrator 113 is formed on a surface extending in the first direction and parallel to the XY plane on which the first magnetic flux concentrator 111 and the second magnetic convergent 112 are formed. In FIG. 9, the 1st magnetic converging part 111, the 2nd magnetic converging part 112, and the 3rd magnetic converging part 113 are formed in substantially the same shape, and the example arrange | positioned at equal intervals in a X direction is shown.

　図９において、第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３は、Ｚ方向から見た平面視で、それぞれ形状が長方形である例を示したが、これに代えて、第１方向に略平行な向きに長手方向をもつ四角形、平行四辺形、台形のいずれであってもよい。また、Ｚ方向から見た平面視で、磁気収束部の４つの角が直角になっているが、少なくとも１つの角が丸まっていたり、面取されていたりしてもよい。また、第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３は、各々が第１方向に平行であり、かつ、第１方向に平行な各々の長辺が略同一の長さを有しているが、各々の長辺が異なる長さであってもよい。また、第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３は、第２方向（Ｘ方向）に平行な各々の短辺が略同一の長さを有しているが、各々の短辺が異なる長さであってもよい。第１磁気収束部１１１、第２磁気収束部１１２、および第３磁気収束部１１３は、パーマロイ等の磁性材料で形成される。 In FIG. 9, the first magnetic converging unit 111, the second magnetic converging unit 112, and the third magnetic converging unit 113 have been shown as examples in which the shapes are rectangular in a plan view viewed from the Z direction. Instead, it may be any of a quadrilateral having a longitudinal direction in a direction substantially parallel to the first direction, a parallelogram, and a trapezoid. In addition, in the plan view viewed from the Z direction, the four corners of the magnetic converging portion are perpendicular, but at least one corner may be rounded or chamfered. In addition, the first magnetic converging unit 111, the second magnetic converging unit 112, and the third magnetic converging unit 113 are each parallel to the first direction and each long side parallel to the first direction is substantially the same. However, each of the long sides may have a different length. In addition, the first magnetic converging unit 111, the second magnetic converging unit 112, and the third magnetic converging unit 113 have substantially the same length in each short side parallel to the second direction (X direction). However, each short side may have a different length. The 1st magnetic converging part 111, the 2nd magnetic converging part 112, and the 3rd magnetic converging part 113 are formed with magnetic materials, such as a permalloy.

　第１磁気収束部１１１の第１端部とは反対側（＋Ｙ方向側）の端部は、第２磁気収束部１１２の第１方向とは反対側（＋Ｙ方向側）の第２端部よりも第１方向とは反対方向（＋Ｙ方向）に延伸される。また、第１磁気収束部１１１の第１端部とは反対側（＋Ｙ方向側）の端部は、第３磁気収束部１１３の第１方向とは反対側（＋Ｙ方向側）の第３端部よりも第１方向とは反対方向（＋Ｙ方向）に延伸される。即ち、第１磁気収束部１１１は、第２磁気収束部１１２および第３磁気収束部１１３に対して、＋Ｙ方向にΔＹずらして形成される。また、第２磁気収束部１１２および第３磁気収束部１１３は、Ｚ方向から見た平面視で、第１磁気収束部１１１に対して対称な配置に設けられてよい。 The end of the first magnetic converging part 111 opposite to the first end (+ Y direction side) is more than the second end of the second magnetic converging part 112 opposite to the first direction (+ Y direction side). Is also stretched in the direction opposite to the first direction (+ Y direction). Further, the end of the first magnetic converging part 111 opposite to the first end (+ Y direction side) is the third end of the third magnetic converging part 113 opposite to the first direction (+ Y direction side). It is extended | stretched in the direction (+ Y direction) opposite to a 1st direction rather than a part. That is, the first magnetic converging part 111 is formed with a shift of ΔY in the + Y direction with respect to the second magnetic converging part 112 and the third magnetic converging part 113. Further, the second magnetic converging unit 112 and the third magnetic converging unit 113 may be provided in a symmetrical arrangement with respect to the first magnetic converging unit 111 in a plan view viewed from the Z direction.

　第１磁気抵抗素子１２１は、Ｚ方向から見た平面視で、第１磁気収束部１１１および第２磁気収束部１１２の間で第１方向に延伸し、第２磁気収束部１１２よりも第１磁気収束部１１１までの距離が小さい。つまり、第１磁気抵抗素子１２１は、第２磁気収束部１１２よりも第１磁気収束部１１１の近くに配置される。また、第２磁気抵抗素子１２２は、Ｚ方向から見た平面視で、第１磁気収束部１１１および第２磁気収束部１１２の間で第１方向に延伸し、第１磁気収束部１１１よりも第２磁気収束部１１２に近くに配置される。また、第３磁気抵抗素子１２３は、Ｚ方向から見た平面視で、第１磁気収束部１１１および第３磁気収束部１１３の間で第１方向に延伸し、第３磁気収束部１１３よりも第１磁気収束部１１１に近くに配置される。また、第４磁気抵抗素子１２４は、Ｚ方向から見た平面視で、第１磁気収束部１１１および第３磁気収束部１１３の間で第１方向に延伸し、第１磁気収束部１１１よりも第３磁気収束部１１３に近くに配置される。 The first magnetoresistive element 121 extends in the first direction between the first magnetic converging part 111 and the second magnetic converging part 112 in a plan view as viewed from the Z direction, and is more first than the second magnetic converging part 112. The distance to the magnetic convergence unit 111 is small. That is, the first magnetoresistive element 121 is disposed closer to the first magnetic converging unit 111 than the second magnetic converging unit 112. Further, the second magnetoresistive element 122 extends in the first direction between the first magnetic converging part 111 and the second magnetic converging part 112 in a plan view as viewed from the Z direction, and is more than the first magnetic converging part 111. It is arranged close to the second magnetic convergence unit 112. The third magnetoresistive element 123 extends in the first direction between the first magnetic converging part 111 and the third magnetic converging part 113 in a plan view as viewed from the Z direction, and is more than the third magnetic converging part 113. It arrange | positions near the 1st magnetic convergence part 111. FIG. Further, the fourth magnetoresistive element 124 extends in the first direction between the first magnetic converging part 111 and the third magnetic converging part 113 in a plan view as viewed from the Z direction, and is larger than the first magnetic converging part 111. It arrange | positions close to the 3rd magnetic convergence part 113. FIG.

　第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、第１方向と垂直な第２方向の磁場をそれぞれ検知する。即ち、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、＋Ｘ方向および－Ｘ方向を含む第２方向の磁場をそれぞれ検知する。第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、当該第２方向の磁場によって、それぞれ例えば電気抵抗率が十％から数十％程度変化する磁気抵抗比を有する（巨大磁気抵抗）。第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、一例として、非磁性層、反強磁性体層および強磁性体層を含む多層薄膜でそれぞれ形成される。 The first magnetoresistive element 121 to the fifth magnetoresistive element 125 detect the magnetic field in the second direction perpendicular to the first direction, respectively. That is, the first to fifth magnetoresistive elements 121 to 125 detect the magnetic fields in the second direction including the + X direction and the −X direction, respectively. The first magnetoresistive element 121 to the fifth magnetoresistive element 125 have a magnetoresistive ratio in which, for example, the electrical resistivity changes by about 10% to several tens% by the magnetic field in the second direction (giant magnetoresistance). As an example, the first magnetoresistance element 121 to the fifth magnetoresistance element 125 are each formed of a multilayer thin film including a nonmagnetic layer, an antiferromagnetic material layer, and a ferromagnetic material layer.

　以上の第１磁気抵抗素子１２１から第４磁気抵抗素子１２４は、一例として、Ｚ方向から見た平面視で、第１磁気収束部１１１に対して対称な配置に設けられる。また、第１から第４磁気抵抗素子は、一例として、略同一方向の感磁性を有する。また、第１磁気抵抗素子１２１および第３磁気抵抗素子１２３の間に、第５磁気抵抗素子１２５を更に設けてもよい。第５磁気抵抗素子１２５は、一例として、第１から第４磁気抵抗素子と略同一方向の感磁性を有する。図９は、第１磁気収束部１１１のＹ方向の中心軸と第５磁気抵抗素子１２５のＹ方向の中心軸とが平面視で一致するように配置され、磁気センサ１００が当該２つの中心軸を含むＹＺ面に対して面対称に形成された例を示す。ここで、対称面であるＹＺ面を第１面とする。 The first magnetoresistive element 121 to the fourth magnetoresistive element 124 described above are provided, for example, in a symmetrical arrangement with respect to the first magnetic converging part 111 in a plan view viewed from the Z direction. In addition, the first to fourth magnetoresistive elements have magnetism in substantially the same direction as an example. Further, a fifth magnetoresistive element 125 may be further provided between the first magnetoresistive element 121 and the third magnetoresistive element 123. For example, the fifth magnetoresistive element 125 has magnetism in substantially the same direction as the first to fourth magnetoresistive elements. In FIG. 9, the Y-direction central axis of the first magnetic converging unit 111 and the Y-direction central axis of the fifth magnetoresistive element 125 are arranged so as to coincide with each other in plan view, and the magnetic sensor 100 includes the two central axes. The example formed symmetrically with respect to the YZ plane including Here, the YZ plane which is a symmetry plane is defined as the first plane.

　図９において、第１磁気抵抗素子１２１および第２磁気抵抗素子１２２は、第１磁気収束部１１１と第２磁気収束部１１２とが第２方向において重なる第１方向の範囲で、第１磁気収束部１１１と第２磁気収束部１１２との間に配置される例を示す。この場合、Ｘ方向に入力する磁場Ｂ_Ｘと、Ｙ方向に入力する磁場Ｂ_Ｙと、Ｚ方向に入力する磁場Ｂ_Ｚと、が第２方向（Ｘ方向）に変換され、第２方向（Ｘ方向）に変換された磁場が第１磁気抵抗素子１２１および第２磁気抵抗素子１２２により効果的に入力することができる。図９において、第１磁気抵抗素子１２１および第２磁気抵抗素子１２２は、第１磁気収束部１１１と第２磁気収束部１１２とが第２方向においてちょうど重なる第１方向の長さをもち、第１磁気収束部１１１と第２磁気収束部１１２との間に配置される例を示す。 In FIG. 9, the first magnetoresistive element 121 and the second magnetoresistive element 122 are within the first direction in which the first magnetic converging part 111 and the second magnetic converging part 112 overlap in the second direction. The example arrange | positioned between the part 111 and the 2nd magnetic convergence part 112 is shown. In this case, the magnetic field B _X input to the X-direction, and the magnetic field B _Y to be input to the Y-direction, and the magnetic field B _Z to enter in the Z direction, but is converted in a second direction (X-direction), second direction (X Direction), the first magnetoresistive element 121 and the second magnetoresistive element 122 can be effectively input. In FIG. 9, the first magnetoresistive element 121 and the second magnetoresistive element 122 have a length in the first direction in which the first magnetic converging part 111 and the second magnetic converging part 112 overlap each other in the second direction. The example arrange | positioned between the 1 magnetic convergence part 111 and the 2nd magnetic convergence part 112 is shown.

　同様に、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４は、第１磁気収束部１１１と第３磁気収束部１１３とが第２方向において重なる第１方向の範囲で、第１磁気収束部１１１と第３磁気収束部１１３との間に配置される例を示す。この場合、Ｘ方向に入力する磁場Ｂ_Ｘと、Ｙ方向に入力する磁場Ｂ_Ｙと、Ｚ方向に入力する磁場Ｂ_Ｚと、が第２方向（Ｘ方向）に変換され、第２方向（Ｘ方向）に変換された磁場が第３磁気抵抗素子１２３および第４磁気抵抗素子１２４により効果的に入力することができる。図９において、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４は、第１磁気収束部１１１と第３磁気収束部１１３とが第２方向においてちょうど重なる第１方向の長さをもって、第１磁気収束部１１１と第３磁気収束部１１３との間に配置される例を示す。 Similarly, the third magnetoresistive element 123 and the fourth magnetoresistive element 124 are within the first direction in which the first magnetic converging part 111 and the third magnetic converging part 113 overlap in the second direction. The example arrange | positioned between 111 and the 3rd magnetic convergence part 113 is shown. In this case, the magnetic field B _X input to the X-direction, and the magnetic field B _Y to be input to the Y-direction, and the magnetic field B _Z to enter in the Z direction, but is converted in a second direction (X-direction), second direction (X Direction), the third magnetoresistive element 123 and the fourth magnetoresistive element 124 can be effectively input. In FIG. 9, the third magnetoresistive element 123 and the fourth magnetoresistive element 124 have a length in the first direction in which the first magnetic converging part 111 and the third magnetic converging part 113 just overlap in the second direction. The example arrange | positioned between the magnetic convergence part 111 and the 3rd magnetic convergence part 113 is shown.

　第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、それぞれ平板状であることが好ましい。第１磁気抵抗素子１２１から第５磁気抵抗素子１２５のそれぞれの形状は、Ｚ方向から見た平面視で、矩形に限らず、例えば、四角形、正方形、平行四辺形、台形、三角形、多角形、円形、楕円形のいずれであってもよい。第１方向に磁気抵抗素子を小分けに分割区分してそれらをメタル配線とで交互に接続した一連の複数の磁気抵抗素子は、１かたまりの磁気抵抗素子として見做すことができる。言い換えると、例えば、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５は、１つの磁気抵抗素子に限らず、２つ以上の磁気抵抗素子をメタル配線で接続して形成されてもよい。 The first magnetoresistive element 121 to the fifth magnetoresistive element 125 are each preferably flat. The shape of each of the first magnetoresistive element 121 to the fifth magnetoresistive element 125 is not limited to a rectangle in a plan view as viewed from the Z direction, for example, a square, a square, a parallelogram, a trapezoid, a triangle, a polygon, It may be either circular or elliptical. A series of a plurality of magnetoresistive elements in which the magnetoresistive elements are subdivided in the first direction and are alternately connected by metal wirings can be regarded as a single magnetoresistive element. In other words, for example, the first to fifth magnetoresistive elements 121 to 125 are not limited to one magnetoresistive element, and may be formed by connecting two or more magnetoresistive elements by metal wiring.

　第１磁気収束部材１３１は、第１磁気収束部１１１の第１方向側（－Ｙ方向側）の第１端部に接続され、第１方向から見て、または平面視で、第１端部から第１磁気抵抗素子１２１側および／または第３磁気抵抗素子１２３側に突出して形成される。第１磁気収束部材１３１は、例えば、第１磁気収束部１１１の最大幅（第２方向の長さの最大値）よりも第１磁気抵抗素子側に突出するように形成される。また、第１磁気収束部材１３１は、第１方向から見て、第１端部から第２磁気収束部１１２側（－Ｘ方向側）および／または第３磁気収束部１１３側（＋Ｘ方向側）へと延伸する。この場合、第１磁気収束部材１３１は、Ｚ方向から見た平面視で、第１方向において第１磁気抵抗素子１２１および／または第３磁気抵抗素子１２３と重なる位置まで延伸してよい。 The first magnetic flux concentrator member 131 is connected to the first end of the first magnetic flux concentrator 111 on the first direction side (−Y direction side), and viewed from the first direction or in plan view, To the first magnetoresistive element 121 side and / or the third magnetoresistive element 123 side. For example, the first magnetic flux concentrator member 131 is formed to protrude to the first magnetoresistive element side with respect to the maximum width (maximum value of the length in the second direction) of the first magnetic flux concentrator 111. Further, the first magnetic flux concentrator member 131 is viewed from the first direction, from the first end to the second magnetic flux concentrator 112 side (−X direction side) and / or the third magnetic flux concentrator 113 side (+ X direction side). Stretch to. In this case, the first magnetic flux concentrator member 131 may extend to a position where it overlaps with the first magnetoresistive element 121 and / or the third magnetoresistive element 123 in the first direction in a plan view as viewed from the Z direction.

　また、第１磁気収束部材１３１は、第１方向と垂直な断面が第１磁気収束部１１１の第１端部における第１方向と垂直な断面よりも大きい。また、第１磁気収束部材１３１は、Ｚ方向から見た平面視で、多角形の形状を有してもよい。図９において、第１磁気収束部材１３１は、Ｚ方向から見た平面視では第２方向に長辺が延伸する長方形で示される、直方体の形状で形成された例を示す。第１磁気収束部材１３１は、第１磁気収束部１１１と略同一の磁性材料で形成されてよい。 Further, the first magnetic flux concentrator member 131 has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction at the first end of the first magnetic flux concentrator 111. Further, the first magnetic flux concentrator member 131 may have a polygonal shape in a plan view viewed from the Z direction. In FIG. 9, the 1st magnetic flux concentrator member 131 shows the example formed in the shape of the rectangular parallelepiped shown by the rectangle which a long side extends | stretches in a 2nd direction in the planar view seen from the Z direction. The first magnetic flux concentrator member 131 may be formed of substantially the same magnetic material as the first magnetic flux concentrator 111.

　第２磁気収束部材１３２は、第２磁気収束部１１２の第１方向とは反対側（＋Ｙ方向側）の第２端部に接続され、第１方向から見て、または平面視で、第２端部から第１磁気抵抗素子１２１側または第２磁気抵抗素子１２２側に突出して形成される。第２磁気収束部材１３２は、例えば、第２磁気収束部１１２の最大幅（第２方向の長さの最大値）よりも第１磁気抵抗素子１２１側または第２磁気抵抗素子１２２側に突出するように形成される。また、第２磁気収束部材１３２は、第１方向から見て、第２端部から第１磁気収束部１１１側（＋Ｘ方向側）および／または第１磁気収束部１１１とは反対側（－Ｘ方向側）へと延伸する。この場合、第１磁気収束部材１３１は、Ｚ方向から見た平面視で、第１方向において第２磁気抵抗素子１２２と重なる位置まで延伸してよい。 The second magnetic flux concentrator member 132 is connected to the second end of the second magnetic flux concentrator 112 on the side opposite to the first direction (+ Y direction side), and is second when viewed from the first direction or in plan view. It is formed to protrude from the end toward the first magnetoresistive element 121 or the second magnetoresistive element 122. For example, the second magnetic flux concentrator member 132 protrudes closer to the first magnetoresistive element 121 or the second magnetoresistive element 122 than the maximum width (the maximum value of the length in the second direction) of the second magnetic flux concentrator 112. Formed as follows. Further, the second magnetic flux concentrator member 132 is viewed from the first direction from the second end to the first magnetic flux concentrator 111 side (+ X direction side) and / or the opposite side of the first magnetic concentrator 111 (−X (Direction side). In this case, the first magnetic flux concentrator member 131 may extend to a position where it overlaps with the second magnetoresistive element 122 in the first direction in a plan view as viewed from the Z direction.

　また、第２磁気収束部材１３２は、第１方向と垂直な断面が第２磁気収束部１１２の第２端部における第１方向と垂直な断面よりも大きい。また、第２磁気収束部材１３２は、Ｚ方向から見た平面視で、多角形の形状を有してもよい。図９において、第２磁気収束部材１３２は、Ｚ方向から見た平面視では第２方向に長辺が延伸する長方形で示される、直方体の形状で形成された例を示す。第２磁気収束部材１３２は、第１磁気収束部１１１と略同一の磁性材料で形成されてよい。 Further, the second magnetic flux concentrator member 132 has a cross section perpendicular to the first direction larger than the cross section perpendicular to the first direction at the second end of the second magnetic flux concentrator 112. Further, the second magnetic flux concentrator member 132 may have a polygonal shape in plan view as viewed from the Z direction. In FIG. 9, the 2nd magnetic flux concentrator member 132 shows the example formed in the shape of the rectangular parallelepiped shown by the rectangle which a long side extends | stretches in a 2nd direction in the planar view seen from the Z direction. The second magnetic focusing member 132 may be formed of substantially the same magnetic material as the first magnetic focusing portion 111.

　第３磁気収束部材１３３は、第３磁気収束部１１３の第１方向とは反対側（＋Ｙ方向側）の第３端部に接続され、第１方向から見て、または平面視で、第３端部から第３磁気抵抗素子１２３側または第４磁気抵抗素子１２４側に突出して形成される。第３磁気収束部材１３３は、例えば、第３磁気収束部１１３の最大幅（第２方向の長さの最大値）よりも第３磁気抵抗素子１２３側または第４磁気抵抗素子１２４側に突出するように形成される。また、第３磁気収束部材１３３は、第１方向から見て、第３端部から第１磁気収束部１１１側（－Ｘ方向側）および／または第１磁気収束部１１１とは反対側（＋Ｘ方向側）へと延伸する。この場合、第３磁気収束部材１３３は、Ｚ方向から見た平面視で、第１方向において第４磁気抵抗素子１２４と重なる位置まで延伸してよい。 The third magnetic flux concentrator member 133 is connected to the third end of the third magnetic flux concentrator 113 opposite to the first direction (+ Y direction side), and is third as viewed from the first direction or in plan view. It is formed protruding from the end toward the third magnetoresistive element 123 or the fourth magnetoresistive element 124. For example, the third magnetic flux concentrator 133 protrudes toward the third magnetoresistive element 123 or the fourth magnetoresistive element 124 with respect to the maximum width (the maximum value of the length in the second direction) of the third magnetic flux concentrator 113. Formed as follows. In addition, the third magnetic flux concentrator 133 is viewed from the first direction from the third end to the first magnetic flux concentrator 111 side (−X direction side) and / or the opposite side of the first magnetic flux concentrator 111 (+ X (Direction side). In this case, the third magnetic flux concentrator member 133 may extend to a position where it overlaps with the fourth magnetoresistive element 124 in the first direction in a plan view viewed from the Z direction.

　また、第３磁気収束部材１３３は、第１方向と垂直な断面が第３磁気収束部１１３の第３端部における第１方向と垂直な断面よりも大きい。また、第３磁気収束部材１３３は、Ｚ方向から見た平面視で、多角形の形状を有してもよい。図９において、第３磁気収束部材１３３は、Ｚ方向から見た平面視では第２方向に長辺が延伸する長方形で示される、直方体の形状で形成された例を示す。第３磁気収束部材１３３は、第３磁気収束部１１３と略同一の磁性材料で形成されてよい。 Further, the third magnetic flux concentrator member 133 has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction at the third end of the third magnetic flux concentrator 113. Further, the third magnetic flux concentrator member 133 may have a polygonal shape in a plan view viewed from the Z direction. In FIG. 9, the 3rd magnetic flux concentrator member 133 shows the example formed in the shape of a rectangular parallelepiped shown by the rectangle which a long side extends in a 2nd direction in the planar view seen from the Z direction. The third magnetic flux concentrator member 133 may be formed of substantially the same magnetic material as the third magnetic flux concentrator 113.

　第２磁気収束部１１２の第２端部とは反対側（－Ｙ方向側）の端部は、第１磁気収束部１１１の第１端部に接続する第１磁気収束部材１３１の第１方向側（－Ｙ方向側）の端部よりも延伸している。また、第１磁気収束部１１１の第１方向とは反対側（＋Ｙ方向側）の端部は、第２磁気収束部１１２の第２端部に接続する第２磁気収束部材１３２の第１方向とは反対側（＋Ｙ方向側）の端部よりも延伸している。こうすることで、磁気センサ１００に＋Ｙ方向に入力する磁場Ｂ_Ｙは、図９の点線で示すように、第２磁気収束部１１２に収束され、第１磁気抵抗素子１２１および第２磁気抵抗素子１２２を横切り、第１磁気収束部１１１を通る磁路を形成する。 The end of the second magnetic concentrator 112 opposite to the second end (the −Y direction) is the first direction of the first magnetic concentrator member 131 connected to the first end of the first magnetic concentrator 111. It extends beyond the end on the side (−Y direction side). Further, the end of the first magnetic flux concentrator 111 opposite to the first direction (+ Y direction side) is the first direction of the second magnetic concentrator member 132 connected to the second end of the second magnetic concentrator 112. It has extended | stretched rather than the edge part on the opposite side (+ Y direction side). As a result, the magnetic field _BY input to the magnetic sensor 100 in the + Y direction is converged to the second magnetic converging unit 112 as shown by the dotted line in FIG. 9, and the first magnetoresistive element 121 and the second magnetoresistive element are converged. A magnetic path passing through the first magnetic flux concentrator 111 is formed across 122.

　また、第３磁気収束部１１３の第３端部とは反対側（－Ｙ方向側）の端部は、第１磁気収束部１１１の第１端部に接続する第１磁気収束部材１３１の第１方向側（－Ｙ方向側）の端部よりも延伸している。また、第１磁気収束部１１１の第１方向とは反対側（＋Ｙ方向側）の端部は、第３磁気収束部１１３の第３端部に接続する第３磁気収束部材１３３の第１方向とは反対側（＋Ｙ方向側）の端部よりも延伸している。こうすることで、磁気センサ１００に＋Ｙ方向に入力する磁場Ｂ_Ｙは、図９の点線で示すように、第３磁気収束部１１３に収束され、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４を横切り、第１磁気収束部１１１を通る磁路を形成する。 In addition, the end of the third magnetic concentrator 113 opposite to the third end (the −Y direction side) is the first magnetic concentrator member 131 connected to the first end of the first magnetic concentrator 111. It extends beyond the end on one direction side (−Y direction side). Further, the end of the first magnetic flux concentrator 111 opposite to the first direction (+ Y direction side) is the first direction of the third magnetic concentrator member 133 connected to the third end of the third magnetic concentrator 113. It has extended | stretched rather than the edge part on the opposite side (+ Y direction side). By doing so, the magnetic field _BY input to the magnetic sensor 100 in the + Y direction is converged to the third magnetic converging unit 113 as shown by the dotted line in FIG. 9, and the third magnetoresistive element 123 and the fourth magnetoresistive element A magnetic path that crosses 124 and passes through the first magnetic flux concentrator 111 is formed.

　以上のような磁気センサ１００は、＋Ｙ方向に平行に入力される磁場Ｂ_Ｙに応じて、第１磁気抵抗素子１２１および第２磁気抵抗素子１２２に、Ｘ方向の磁場成分＋β・Ｂ_Ｙをそれぞれ供給して、＋δＲ・β・Ｂ_Ｙの抵抗値変化をそれぞれ生じさせる。また、磁気センサ１００は、磁気収束部１１０が第１面に対して面対称に形成されるので、磁場Ｂ_Ｙの入力に応じて、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４に、Ｘ方向の磁場成分－β・Ｂ_Ｙをそれぞれ供給して、－δＲ・β・Ｂ_Ｙの抵抗値変化をそれぞれ生じさせる。ここで、磁場Ｂ_Ｙによって生じるＸ方向の磁場成分－β・Ｂ_Ｙは、Ｘ方向とは逆向きの－Ｘ方向なので、抵抗値変化もマイナスとなる。 In the magnetic sensor 100 as described above, the first magnetic resistance element 121 and the second magnetoresistive element 122 are each _supplied with the magnetic field component + β · _BY in the X direction according to the magnetic field _BY input in parallel to the + Y direction. Then, a resistance value change of + δR · β · _BY is generated. Further, in the magnetic sensor 100, since the magnetic converging unit 110 is formed in plane symmetry with respect to the first surface, the third magnetoresistive element 123 and the fourth magnetoresistive element 124 are changed according to the input of the magnetic field _BY . The magnetic field components -β · _BY in the X direction are respectively supplied to cause resistance value changes of -δR · β · _BY . Here, the magnetic field component-beta · B _Y in the X direction caused by the magnetic field B _Y, since the X-direction -X direction opposite the resistance value change becomes negative.

　また、第１磁気収束部１１１は、第５磁気抵抗素子１２５を覆うように形成されるので、当該第５磁気抵抗素子１２５が配置される位置には、磁場Ｂ_Ｙから変換される第２方向の磁場の成分はほとんど発生しない。また、磁気収束部１１０は、第１面に対して面対称に形成されるので、磁場Ｂ_Ｙの入力に応じて第５磁気抵抗素子１２５に第２方向の磁場の成分が入力しても、当該入力磁場成分も第１面に対して面対称となって総和がほぼ零となる。したがって、第５磁気抵抗素子１２５は、磁場Ｂ_Ｙの入力があっても、抵抗値変化がほとんど生じない。 Moreover, since the 1st magnetic converging part 111 is formed so that the 5th magnetoresistive element 125 may be covered, it is the 2nd direction converted from the magnetic field _BY in the position where the said 5th magnetoresistive element 125 is arrange | positioned. Almost no magnetic field component is generated. Further, since the magnetic converging unit 110 is formed symmetrically with respect to the first surface, even if a magnetic field component in the second direction is input to the fifth magnetoresistive element 125 in response to the input of the magnetic field _BY , The input magnetic field component is also plane-symmetric with respect to the first surface, and the sum is almost zero. Therefore, the fifth magnetoresistive element 125 hardly changes in resistance value even when the magnetic field _BY is input.

　また、磁気センサ１００は、＋Ｘ方向に平行に入力される磁場Ｂ_Ｘに応じて、第１磁気抵抗素子１２１から第４磁気抵抗素子１２４に、Ｘ方向の磁場成分＋α・Ｂ_Ｘをそれぞれ供給して、＋δＲ・α・Ｂ_Ｘの抵抗値変化をそれぞれ生じさせる。 The magnetic sensor 100, + X direction according to the magnetic field _{B X} input in parallel to, the fourth magnetoresistive element 124 from the first magneto-resistive element 121, X-direction magnetic field component + α · _{B X} were supplied Te causes each change in resistance + δR · α · B _X.

　また、磁気センサ１００は、磁場Ｂ_Ｚの入力に応じて、第１磁気抵抗素子１２１および第４磁気抵抗素子１２４にＸ方向の磁場成分＋γ・Ｂ_Ｚをそれぞれ発生させ、第１磁気抵抗素子１２１および第４磁気抵抗素子１２４は、＋δＲ・γ・Ｂ_Ｚの抵抗値変化をそれぞれ生じさせる。また、磁気収束部１１０は、磁場Ｂ_Ｚの入力に応じて、第２磁気抵抗素子１２２および第３磁気抵抗素子１２３にＸ方向の磁場の成分－γ・Ｂ_Ｚをそれぞれ発生させ、第２磁気抵抗素子１２２および第３磁気抵抗素子１２３は、－δＲ・γ・Ｂ_Ｚの抵抗値変化をそれぞれ生じさせる。 The magnetic sensor 100 in accordance with an input of the magnetic field _{B Z,} respectively to generate the X-direction magnetic field component + γ · _{B Z} to the first magneto-resistive element 121 and the fourth magnetoresistive element 124, the first magnetoresistive element 121 and the fourth magnetoresistive element 124 causes each of the resistance value change of + δR · γ · _{B Z.} Further, the magnetic flux concentrator 110, in response to the input of the magnetic field _{B Z,} respectively to generate the X-direction magnetic field component-gamma · _{B Z} of the second magnetoresistive element 122 and the third magnetoresistive element 123, the second magnetic resistance element 122 and the third magnetoresistive element 123 causes each of the change in resistance -δR · γ · _{B Z.}

　同様に、当該第５磁気抵抗素子１２５が配置される位置には、磁場Ｂ_Ｚから変換される第２方向の磁場の成分はほとんど発生しない。また、磁気収束部１１０は、第１面に対して面対称に形成されるので、磁場Ｂ_Ｚの入力に応じて第５磁気抵抗素子１２５に第２方向の磁場の成分が入力しても、入力した当該磁場成分も第１面に対して面対称となってほとんどが相殺される。したがって、第５磁気抵抗素子１２５は、磁場Ｂ_Ｙの入力と同様に、磁場Ｂ_Ｚの入力があっても、抵抗値変化はほとんど生じない。 Similarly, the the fifth position where the magnetic resistance element 125 is disposed, the component of the magnetic field in a second direction which is converted from the magnetic field B _Z hardly occurs. Further, the magnetic flux concentrator 110, since it is formed in plane symmetry with respect to the first surface, even if components of the second direction of the magnetic field to the fifth magnetoresistance device 125 according to the input of the magnetic field B _Z inputs, The input magnetic field component is also plane-symmetric with respect to the first surface and is almost cancelled. Therefore, in the fifth magnetoresistance element 125, as with the input of the magnetic field _BY , the resistance value hardly changes even when the magnetic field _BZ is input.

　第５磁気抵抗素子１２５は、図５において、第１磁気収束部１１１に覆われるように配置されているが、これには限定せず、第２磁気収束部１１２または第３磁気収束部１１３に覆われるように配置されてよく、この場合でも上記と同様な結果が得られる。 In FIG. 5, the fifth magnetoresistive element 125 is disposed so as to be covered by the first magnetic converging unit 111, but the present invention is not limited to this, and the second magnetic converging unit 112 or the third magnetic converging unit 113 is not limited thereto. In this case, the same result as described above can be obtained.

　以上のように、本変形例の磁気センサ１００は、Ｘ、Ｙ、およびＺ方向に入力する磁場を、磁気収束部１１０と第１磁気収束部材１３１から第３磁気収束部材１３３を用いて、第５磁気抵抗素子１２５を除く磁気抵抗素子に第２方向の磁場成分が発生するようにそれぞれ曲げ、抵抗値の変化を生じさせる。磁気センサ１００は、任意の方向の磁場が入力した場合、各方向の磁場に応じた抵抗値変化の総和を、抵抗値の変化として生じさせる。 As described above, the magnetic sensor 100 of the present modified example uses the third magnetic converging member 133 from the magnetic converging unit 110 and the first magnetic converging member 131 to input magnetic fields input in the X, Y, and Z directions. The magnetoresistive elements other than the five magnetoresistive elements 125 are bent so that a magnetic field component in the second direction is generated, thereby causing a change in resistance value. When a magnetic field in an arbitrary direction is input, the magnetic sensor 100 generates a total resistance value change corresponding to the magnetic field in each direction as a resistance value change.

　磁気センサ１００は、一例として、任意の方向の磁場Ｂ（Ｂ_Ｘ，Ｂ_Ｙ，Ｂ_Ｚ）に対して、磁気抵抗素子１２０のそれぞれに次式で示すような抵抗値変化を生じさせる。ここで、Ｒ_０は、磁場の入力が零の場合のそれぞれの磁気抵抗素子の抵抗値を示す。また、Ｒ_１からＲ_５は、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５の抵抗値をそれぞれ示す。
　（数６）
　Ｒ_１＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ＋β・Ｂ_Ｙ＋γ・Ｂ_Ｚ）
　Ｒ_２＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ＋β・Ｂ_Ｙ－γ・Ｂ_Ｚ）
　Ｒ_３＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ－β・Ｂ_Ｙ－γ・Ｂ_Ｚ）
　Ｒ_４＝Ｒ_０＋δＲ・（α・Ｂ_Ｘ－β・Ｂ_Ｙ＋γ・Ｂ_Ｚ）
　Ｒ_５＝Ｒ_０ As an example, the magnetic sensor 100 causes a resistance value change as shown by the following equation in each of the magnetoresistive elements 120 with respect to a magnetic field B (B _X , B _Y , B _Z ) in an arbitrary direction. Here, R ₀ indicates the resistance value of each magnetoresistive element when the input of the magnetic field is zero. R ₁ to R ₅ indicate the resistance values of the first magnetoresistance element 121 to the fifth magnetoresistance element 125, respectively.
(Equation 6)
R ₁ = R ₀ + δR · (α · B _X + β · B _Y + γ · B _Z )
R ₂ = R ₀ + δR · (α · B _X + β · B _Y −γ · B _Z )
R ₃ = R ₀ + δR · (α · B _X −β · B _Y −γ · B _Z )
R ₄ = R ₀ + δR · (α · B _X −β · B _Y + γ · B _Z )
R ₅ = R ₀

　また、（数６）式より、次式を得ることができる。
　（数７）
　４δＲ・α・Ｂ_Ｘ＝（Ｒ_１－Ｒ_５）＋（Ｒ_２－Ｒ_５）＋（Ｒ_３－Ｒ_５）＋（Ｒ_４－Ｒ_５）
　４δＲ・β・Ｂ_Ｙ＝（Ｒ_１－Ｒ_５）＋（Ｒ_２－Ｒ_５）－（Ｒ_３－Ｒ_５）－（Ｒ_４－Ｒ_５）
　４δＲ・γ・Ｂ_Ｚ＝（Ｒ_１－Ｒ_５）－（Ｒ_２－Ｒ_５）－（Ｒ_３－Ｒ_５）＋（Ｒ_４－Ｒ_５） Further, the following equation can be obtained from the equation (6).
(Equation 7)
4δR · α · B _X = (R ₁ −R ₅ ) + (R ₂ −R ₅ ) + (R ₃ −R ₅ ) + (R ₄ −R ₅ )
4δR · β · B _Y = (R ₁ −R ₅ ) + (R ₂ −R ₅ ) − (R ₃ −R ₅ ) − (R ₄ −R ₅ )
4δR · γ · B _Z = (R ₁ −R ₅ ) − (R ₂ −R ₅ ) − (R ₃ −R ₅ ) + (R ₄ −R ₅ )

　磁気センサ１００は、磁気抵抗素子１２０にこのような抵抗値の変化が生じたことで、任意の方向の磁場Ｂを検出したと判断してもよい。また、磁気センサ１００は、任意の方向の磁場Ｂの入力に応じた磁気抵抗素子１２０のそれぞれの値から、入力磁場成分Ｂ_Ｘ、Ｂ_Ｙ、およびＢ_Ｚを算出してもよい。以上の説明において、任意の方向の磁場Ｂは、＋Ｘ方向、＋Ｙ方向、および＋Ｚ方向の磁場入力を例として説明したが、－Ｘ方向、－Ｙ方向、および－Ｚ方向の磁場入力に対しても同様である。 The magnetic sensor 100 may determine that the magnetic field B in an arbitrary direction has been detected due to such a change in the resistance value of the magnetoresistive element 120. In addition, the magnetic sensor 100 may calculate the input magnetic field components B _X , B _Y , and B _Z from the respective values of the magnetoresistive element 120 according to the input of the magnetic field B in an arbitrary direction. In the above description, the magnetic field B in any direction has been described by taking the magnetic field input in the + X direction, the + Y direction, and the + Z direction as an example, but the magnetic field input in the −X direction, the −Y direction, and the −Z direction. Is the same.

　例えば、磁気収束部１１０は、第１面に対して面対称に形成されるので、＋Ｘ方向、＋Ｙ方向および／または＋Ｚ方向の入力磁場の正負の向きが反転した場合、図９および図１０の磁束の経路の向きが反転することになる。この場合、磁気抵抗素子１２０のそれぞれの値の変化の向きが反転することになる。即ち、入力磁場の反転に応じて、対応する磁気抵抗素子１２０のそれぞれの抵抗値の変化の向きが反転するので、（数７）式の関係式は入力磁場の正負に関わらず成立することになる。 For example, since the magnetic converging unit 110 is formed to be plane-symmetric with respect to the first surface, when the positive and negative directions of the input magnetic field in the + X direction, the + Y direction, and / or the + Z direction are reversed, FIG. 9 and FIG. The direction of the magnetic flux path is reversed. In this case, the direction of change of each value of the magnetoresistive element 120 is reversed. That is, since the direction of change in the resistance value of each corresponding magnetoresistive element 120 is reversed in accordance with the reversal of the input magnetic field, the relational expression of Equation (7) holds regardless of whether the input magnetic field is positive or negative. Become.

　以上のように、本変形例の磁気センサ１００は、検出すべき磁場の方向に対応して配置することなく、任意の方向の磁場Ｂを検出することができる。また、磁気センサ１００は、それぞれの磁気抵抗素子の検出結果に基づき、任意の方向の磁場Ｂの各方向の磁場成分を算出することもできる。このように、磁気センサ１００は、小型で、かつ、配置方向の制限がほとんどないので、機器に容易に組み込むことができる。 As described above, the magnetic sensor 100 of the present modification can detect the magnetic field B in an arbitrary direction without being arranged corresponding to the direction of the magnetic field to be detected. Moreover, the magnetic sensor 100 can also calculate the magnetic field component of each direction of the magnetic field B of arbitrary directions based on the detection result of each magnetoresistive element. As described above, the magnetic sensor 100 is small in size and has almost no restriction on the arrangement direction, and can be easily incorporated into a device.

　また、本変形例の磁気センサ１００は、入力する磁場を第１磁気収束部材１３１、第２磁気収束部材１３２、および第３磁気収束部材１３３でそれぞれ収束させてから、対応する磁気収束部１１０を介して、対応する磁気抵抗素子１２０に供給する。これによって、磁場変換率αおよびγの傾向を保ったまま、磁場変換率βの極端な増加を抑制して磁気抵抗素子の使用可能領域を増加させることができる。 In addition, the magnetic sensor 100 according to the present modified example converges the input magnetic field by the first magnetic converging member 131, the second magnetic converging member 132, and the third magnetic converging member 133, and then sets the corresponding magnetic converging unit 110. To the corresponding magnetoresistive element 120. Accordingly, it is possible to increase the usable area of the magnetoresistive element by suppressing the extreme increase of the magnetic field conversion rate β while maintaining the tendency of the magnetic field conversion rates α and γ.

　図１１は、本実施形態に係る磁気センサ１００の第２の変形例を示す。図１１は、第２の変形例の磁気センサ１００のＺ方向から見た平面視の構成例であり、本変形例の磁気センサ１００において、図９に示された第１の変形例の磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。第２の変形例の磁気センサ１００は、第１の変形例の磁気センサ１００の構成例に、第４磁気収束部材１３４と、第５磁気収束部材１３５と、第６磁気収束部材１３６とを更に備える例を説明する。 FIG. 11 shows a second modification of the magnetic sensor 100 according to this embodiment. FIG. 11 is a configuration example in plan view of the magnetic sensor 100 according to the second modification as viewed from the Z direction. In the magnetic sensor 100 according to this modification, the magnetic sensor according to the first modification shown in FIG. Components that are substantially the same as those in operation 100 are denoted by the same reference numerals, and description thereof is omitted. The magnetic sensor 100 of the second modified example further includes a fourth magnetic focusing member 134, a fifth magnetic focusing member 135, and a sixth magnetic focusing member 136 in addition to the configuration example of the magnetic sensor 100 of the first modified example. An example provided will be described.

　第４磁気収束部材１３４は、第１磁気収束部１１１の第１端部とは反対側（＋Ｙ方向側）の第４端部に接続され、第１方向から見て、または平面視で、第４端部から第１磁気抵抗素子１２１側および／または第３磁気抵抗素子１２３側に突出して形成される。第４磁気収束部材１３４は、第１方向から見て、第４端部から第２磁気収束部１１２側（－Ｘ方向側）および／または第３磁気収束部１１３側（＋Ｘ方向側）へと延伸する。図１１において、第４磁気収束部材１３４は、Ｚ方向から見た平面視で、第１方向において第１磁気抵抗素子１２１および／または第３磁気抵抗素子１２３と重なる位置まで延伸する例を示す。 The fourth magnetic flux concentrator member 134 is connected to the fourth end of the first magnetic flux concentrator 111 opposite to the first end (+ Y direction side), and viewed from the first direction or in plan view. It is formed so as to protrude from the four end portions to the first magnetoresistive element 121 side and / or the third magnetoresistive element 123 side. When viewed from the first direction, the fourth magnetic flux concentrator member 134 extends from the fourth end to the second magnetic flux concentrator 112 side (−X direction side) and / or the third magnetic flux concentrator 113 side (+ X direction side). Stretch. 11 shows an example in which the fourth magnetic flux concentrating member 134 extends to a position where it overlaps with the first magnetoresistive element 121 and / or the third magnetoresistive element 123 in the first direction in a plan view seen from the Z direction.

　また、第４磁気収束部材１３４は、第１方向と垂直な断面が第１磁気収束部１１１の第４端部における第１方向と垂直な断面よりも大きい。第１磁気収束部１１１、第１磁気収束部材１３１、および第４磁気収束部材１３４で形成される形状は、Ｚ方向から見た平面視で、第１方向および／または第２方向と略平行な線と線対称であってよい。図１１において、第１磁気収束部１１１、第１磁気収束部材１３１、および第４磁気収束部材１３４は、第１面に対して面対称な形状の例を示す。第４磁気収束部材１３４は、第１磁気収束部１１１および第１磁気収束部材１３１と略同一の磁性材料で形成されてよい。 Further, the fourth magnetic flux concentrator member 134 has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction at the fourth end of the first magnetic flux concentrator 111. The shape formed by the first magnetic flux concentrator 111, the first magnetic flux concentrator member 131, and the fourth magnetic flux convergent member 134 is substantially parallel to the first direction and / or the second direction in a plan view viewed from the Z direction. It may be symmetrical with the line. In FIG. 11, the first magnetic flux concentrator 111, the first magnetic flux concentrator member 131, and the fourth magnetic flux concentrator member 134 show examples of shapes that are plane-symmetric with respect to the first surface. The fourth magnetic flux concentrator member 134 may be formed of substantially the same magnetic material as the first magnetic flux concentrator 111 and the first magnetic flux convergent member 131.

　第５磁気収束部材１３５は、第２磁気収束部１１２の第２端部とは反対側（－Ｙ方向側）の第５端部に接続され、第１方向から見て、または平面視で、第５端部から第１磁気抵抗素子１２１側または第２磁気抵抗素子１２２側に突出して形成される。第５磁気収束部材１３５は、第１方向から見て、第５端部から第１磁気収束部１１１側（＋Ｘ方向側）および／または第１磁気収束部１１１とは反対側（－Ｘ方向側）へと延伸する。図１１において、第５磁気収束部材１３５は、Ｚ方向から見た平面視で、第１方向において第２磁気抵抗素子１２２と重なる位置まで延伸する例を示す。 The fifth magnetic flux concentrator member 135 is connected to the fifth end of the second magnetic flux concentrator 112 opposite to the second end (−Y direction side), and viewed from the first direction or in plan view, It is formed to protrude from the fifth end to the first magnetoresistive element 121 side or the second magnetoresistive element 122 side. The fifth magnetic flux concentrator member 135 is viewed from the first direction, from the fifth end to the first magnetic flux concentrator 111 side (+ X direction side) and / or the opposite side of the first magnetic flux concentrator 111 (−X direction side) ). FIG. 11 shows an example in which the fifth magnetic flux concentrating member 135 extends to a position overlapping the second magnetoresistive element 122 in the first direction in a plan view as viewed from the Z direction.

　また、第５磁気収束部材１３５は、第１方向と垂直な断面が第２磁気収束部１１２の第５端部における第１方向と垂直な断面よりも大きい。第２磁気収束部１１２、第２磁気収束部材１３２、および第５磁気収束部材１３５で形成される形状は、Ｚ方向から見た平面視で、第１方向および／または第２方向と略平行な線と線対称であってよい。第５磁気収束部材１３５は、第２磁気収束部１１２および第２磁気収束部材１３２と略同一の磁性材料で形成されてよい。 Further, the fifth magnetic flux concentrator member 135 has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction at the fifth end of the second magnetic flux concentrator 112. The shape formed by the second magnetic flux concentrator 112, the second magnetic flux concentrator member 132, and the fifth magnetic flux concentrator member 135 is substantially parallel to the first direction and / or the second direction in a plan view viewed from the Z direction. It may be symmetrical with the line. The fifth magnetic flux concentrator member 135 may be formed of substantially the same magnetic material as the second magnetic flux concentrator 112 and the second magnetic flux concentrator member 132.

　第６磁気収束部材１３６は、第３磁気収束部１１３の第３端部とは反対側（－Ｙ方向側）の第６端部に接続され、第１方向から見て、または平面視で、第６端部から第３磁気抵抗素子１２３側または第４磁気抵抗素子１２４側に突出して形成される。第６磁気収束部材１３６は、第１方向から見て、第６端部から第１磁気収束部１１１側（－Ｘ方向側）および／または第１磁気収束部１１１とは反対側（＋Ｘ方向側）へと延伸する。図１１において、第６磁気収束部材１３６は、Ｚ方向から見た平面視で、第１方向において第４磁気抵抗素子１２４と重なる位置まで延伸する例を示す。 The sixth magnetic flux concentrator member 136 is connected to the sixth end of the third magnetic flux concentrator 113 opposite to the third end (−Y direction side), and viewed from the first direction or in plan view, It is formed to project from the sixth end to the third magnetoresistive element 123 side or the fourth magnetoresistive element 124 side. The sixth magnetic flux concentrator member 136 is viewed from the first direction, from the sixth end to the first magnetic flux concentrator 111 side (−X direction side) and / or the opposite side of the first magnetic flux concentrator 111 (+ X direction side) ). 11 shows an example in which the sixth magnetic flux concentrator member 136 extends to a position overlapping with the fourth magnetoresistive element 124 in the first direction when seen in a plan view from the Z direction.

　また、第６磁気収束部材１３６は、第１方向と垂直な断面が第３磁気収束部１１３の第６端部における第１方向と垂直な断面よりも大きい。第３磁気収束部１１３、第３磁気収束部材１３３、および第６磁気収束部材１３６で形成される形状は、Ｚ方向から見た平面視で、第１方向および／または第２方向と略平行な線と線対称であってよい。第６磁気収束部材１３６は、第３磁気収束部１１３および第３磁気収束部材１３３と略同一の磁性材料で形成されてよい。第３磁気収束部１１３、第３磁気収束部材１３３、および第６磁気収束部材１３６で形成される形状は、第１面に対して、第２磁気収束部１１２、第２磁気収束部材１３２、および第５磁気収束部材１３５で形成される形状と面対称に形成されてよい。 Further, the sixth magnetic flux concentrator member 136 has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction at the sixth end of the third magnetic flux concentrator 113. The shape formed by the third magnetic focusing portion 113, the third magnetic focusing member 133, and the sixth magnetic focusing member 136 is substantially parallel to the first direction and / or the second direction in a plan view viewed from the Z direction. It may be symmetrical with the line. The sixth magnetic flux concentrator member 136 may be formed of substantially the same magnetic material as the third magnetic flux concentrator 113 and the third magnetic flux convergent member 133. The shape formed by the third magnetic converging part 113, the third magnetic converging member 133, and the sixth magnetic converging member 136 is such that the second magnetic converging part 112, the second magnetic converging member 132, and It may be formed symmetrically with the shape formed by the fifth magnetic flux concentrator member 135.

　第２磁気収束部１１２の第５端部に接続する第５磁気収束部材１３５の第１方向側（－Ｙ方向側）の端部は、第１磁気収束部１１１の第１端部に接続する第１磁気収束部材１３１の第１方向側（－Ｙ方向側）の端部よりも延伸している。また、第１磁気収束部１１１の第４端部に接続する第４磁気収束部材１３４の第１方向とは反対側（＋Ｙ方向側）の端部は、第２磁気収束部１１２の第２端部に接続する第２磁気収束部材１３２の第１方向とは反対側（＋Ｙ方向側）の端部よりも延伸している。こうすることで、磁気センサ１００に＋Ｙ方向に入力する磁場Ｂ_Ｙは、第５磁気収束部材１３５に収束され、第２磁気収束部１１２を通り、第１磁気抵抗素子１２１および第２磁気抵抗素子１２２を横切り、第１磁気収束部１１１および第４磁気収束部材１３４を通る磁路を形成する。 An end portion on the first direction side (−Y direction side) of the fifth magnetic focusing member 135 connected to the fifth end portion of the second magnetic focusing portion 112 is connected to the first end portion of the first magnetic focusing portion 111. The first magnetic flux concentrator member 131 extends beyond the end portion on the first direction side (−Y direction side). Further, the end of the fourth magnetic flux concentrator member 134 connected to the fourth end of the first magnetic flux concentrator 111 opposite to the first direction (+ Y direction side) is the second end of the second magnetic flux concentrator 112. The second magnetic flux concentrator member 132 connected to the portion extends beyond the end on the side opposite to the first direction (+ Y direction side). By doing so, the magnetic field _BY input to the magnetic sensor 100 in the + Y direction is converged on the fifth magnetic converging member 135, passes through the second magnetic converging unit 112, and the first magnetoresistive element 121 and the second magnetoresistive element. A magnetic path passing through the first magnetic flux concentrator 111 and the fourth magnetic flux concentrator member 134 is formed across 122.

　また、第３磁気収束部１１３の第６端部に接続する第６磁気収束部材１３６の第１方向側（－Ｙ方向側）の端部は、第１磁気収束部１１１の第１端部に接続する第１磁気収束部材１３１の第１方向側（－Ｙ方向側）の端部よりも延伸している。また、第１磁気収束部１１１の第４端部に接続する第４磁気収束部材１３４の第１方向とは反対側（＋Ｙ方向側）の端部は、第３磁気収束部１１３の第３端部に接続する第３磁気収束部材１３３の第１方向とは反対側（＋Ｙ方向側）の端部よりも延伸している。こうすることで、磁気センサ１００に＋Ｙ方向に入力する磁場Ｂ_Ｙは、第６磁気収束部材１３６に収束され、第３磁気収束部１１３を通り、第３磁気抵抗素子１２３および第４磁気抵抗素子１２４を横切り、第１磁気収束部１１１および第４磁気収束部材１３４を通る磁路を形成する。 The end of the sixth magnetic concentrating member 136 connected to the sixth end of the third magnetic concentrating portion 113 on the first direction side (−Y direction side) is connected to the first end of the first magnetic converging portion 111. The first magnetic flux concentrator 131 to be connected extends from the end portion on the first direction side (−Y direction side). The end of the fourth magnetic flux concentrator member 134 connected to the fourth end of the first magnetic flux concentrator 111 opposite to the first direction (+ Y direction side) is the third end of the third magnetic flux concentrator 113. The third magnetic flux concentrator member 133 connected to the portion extends beyond the end on the side opposite to the first direction (+ Y direction side). By doing so, the magnetic field _BY input to the magnetic sensor 100 in the + Y direction is converged on the sixth magnetic converging member 136, passes through the third magnetic converging unit 113, and the third magnetoresistive element 123 and the fourth magnetoresistive element. A magnetic path passing through the first magnetic flux concentrator 111 and the fourth magnetic flux concentrator member 134 is formed across 124.

　以上の第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、接続される磁気収束部の端部の面積を拡大するように形成されるので、磁気収束部１１０に収束する磁場を増加させる。例えば、第５磁気収束部材１３５および第６磁気収束部材１３６は、＋Ｙ方向に入力する磁場Ｂ_Ｙが入力する断面積を拡大させるので、対応する第２磁気収束部１１２および第３磁気収束部１１３に収束する磁場を増加させる。また、第４磁気収束部材１３４は、－Ｙ方向に入力する磁場Ｂ_Ｙが入力する断面積を拡大させるので、対応する第１磁気収束部１１１に収束する磁場を増加させる。 The fourth magnetic flux concentrator member 134, the fifth magnetic flux concentrator member 135, and the sixth magnetic flux concentrator member 136 are formed so as to enlarge the area of the end portion of the magnetic flux concentrator to be connected. Increase the magnetic field to converge to. For example, the fifth magnetic focusing member 135 and the sixth magnetic focusing member 136 enlarge the cross-sectional area input by the magnetic field _BY input in the + Y direction, and thus the corresponding second magnetic focusing unit 112 and third magnetic focusing unit 113. Increase the magnetic field to converge to. Further, since the fourth magnetic flux concentrator member 134 enlarges the cross-sectional area input by the magnetic field _BY input in the -Y direction, the magnetic field converged on the corresponding first magnetic flux concentrator 111 is increased.

　したがって、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、磁気収束部１１０が磁気抵抗素子１２０に供給する第２方向の磁場の成分を増加させることができる。即ち、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、磁場変換率βを増加させることができる。この場合において、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、磁場Ｂ_Ｙが入力するそれぞれの面と、磁気抵抗素子１２０との間を予め定められた距離を隔てて形成することができる。 Therefore, the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 can increase the magnetic field component in the second direction supplied from the magnetic focusing unit 110 to the magnetoresistive element 120. . That is, the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 can increase the magnetic field conversion rate β. In this case, the fourth magnetic flux concentrating member 134, the fifth magnetic flux concentrating member 135, and the sixth magnetic flux concentrating member 136 are predetermined between the respective surfaces to which the magnetic field _BY is input and the magnetoresistive element 120. They can be formed at a distance.

　また、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、Ｘ方向またはＺ方向から入力される磁場に対しては、第２方向の磁場の成分の磁気抵抗素子１２０への供給量をほとんど変化させない。したがって、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、磁場変換率αおよびγの傾向を保ちつつ、磁場変換率βの値を全体的に増加させることができる。 Further, the fourth magnetic flux concentrator member 134, the fifth magnetic flux convergent member 135, and the sixth magnetic flux convergent member 136 have a magnetic resistance of a component of the magnetic field in the second direction with respect to the magnetic field input from the X direction or the Z direction. The supply amount to the element 120 is hardly changed. Therefore, the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 increase the value of the magnetic field conversion rate β overall while maintaining the tendency of the magnetic field conversion rates α and γ. Can do.

　即ち、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、例えば、図７の磁場変換率βの特性を、Ｙ軸方向に略平行に移動させることができる。第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、例えば、図７において、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６のない第１の変形例の磁気センサ１００の磁場変換率βよりも、点線で示すような磁場変換率βを増加させることができる。即ち、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６は、磁気センサ１００のＹ方向の検出感度を向上させることができる。 That is, the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 can move, for example, the characteristics of the magnetic field conversion rate β in FIG. 7 substantially parallel to the Y-axis direction. . The fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 are, for example, the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 in FIG. It is possible to increase the magnetic field conversion rate β as shown by the dotted line rather than the magnetic field conversion rate β of the magnetic sensor 100 of the first modified example without the magnetic field. That is, the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136 can improve the detection sensitivity of the magnetic sensor 100 in the Y direction.

　なお、図７において点線で示されるように、横軸Ｙ＝Ｙ_０近傍で磁場変換率αが増大し、磁場変換率γが減少しているのは、第２磁気収束部材１３２によるものである。すなわち、第２磁気収束部材１３２が、＋Ｘ方向に入力する磁場Ｂｘを第１磁気抵抗素子１２１の第１方向と反対側（＋Ｙ方向側）に＋Ｘ方向の磁場成分を増幅して供給し、第２磁気収束部材１３２が、＋Ｚ方向に入力する磁場Ｂｚを収束して第１磁気抵抗素子１２１の第１方向と反対側（＋Ｙ方向側）へ供給される＋Ｘ方向の磁場成分を減少させていることによるものである。しかしながらこの影響は磁場変換率βの変動に比べて小さく、磁場変換率αおよびγは第１磁気抵抗素子１２１において略一定の値である。 As indicated by the dotted line in FIG. 7, the magnetic field conversion rate α increases and the magnetic field conversion rate γ decreases near the horizontal axis Y = Y ₀ because of the second magnetic convergence member 132. . That is, the second magnetic flux concentrator member 132 amplifies and supplies the magnetic field component in the + X direction to the opposite side (+ Y direction side) of the first magnetoresistive element 121 to the magnetic field Bx input in the + X direction. 2 The magnetic converging member 132 converges the magnetic field Bz input in the + Z direction and reduces the magnetic field component in the + X direction supplied to the first magnetoresistive element 121 on the side opposite to the first direction (+ Y direction side). It is because. However, this influence is small compared to the fluctuation of the magnetic field conversion rate β, and the magnetic field conversion rates α and γ are substantially constant values in the first magnetoresistive element 121.

　なお、第２の変形例において、磁気センサ１００は、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６を備えることを説明した。これに代えて、磁気センサ１００は、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６のうち、少なくとも１つを備える構成であってもよい。 In the second modification, it has been described that the magnetic sensor 100 includes the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136. Instead, the magnetic sensor 100 may be configured to include at least one of the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136.

　図１２は、本実施形態に係る磁気センサ１００の第３の変形例を示す。図１２は、第３の変形例の磁気センサ１００のＺ方向から見た平面視の構成例であり、本変形例の磁気センサ１００において、図１１に示された第２の変形例の磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。第３の変形例の磁気センサ１００は、第２の変形例の磁気センサ１００の構成例の第１磁気収束部材１３１と、第２磁気収束部材１３２と、第３磁気収束部材１３３の形状を、Ｚ方向から見た平面視で三角形にした構成例である。 FIG. 12 shows a third modification of the magnetic sensor 100 according to this embodiment. FIG. 12 is a configuration example of the magnetic sensor 100 according to the third modification as viewed from the Z direction, and the magnetic sensor 100 according to the second modification illustrated in FIG. 11 in the magnetic sensor 100 according to the present modification. Components that are substantially the same as those in operation 100 are denoted by the same reference numerals, and description thereof is omitted. The magnetic sensor 100 of the third modified example has the shapes of the first magnetic focusing member 131, the second magnetic focusing member 132, and the third magnetic focusing member 133 of the configuration example of the magnetic sensor 100 of the second modified example. It is the structural example made into the triangle by planar view seen from the Z direction.

　磁気センサ１００は、第１磁気収束部材１３１、第２磁気収束部材１３２、および第３磁気収束部材１３３をこのような形状に変更しても、図７の点線で示すような第２の変形例の磁気センサ１００の磁場変換率βの特性とほぼ同等の特性を得ることができる。また、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６を変更する形状によっては、磁場変換率βの特性に変化を与えることもできる。つまり、第４磁気収束部材１３４、第５磁気収束部材１３５、および第６磁気収束部材１３６を変更する形状によっては、磁場変換率βの振る舞いの概形を変化させず、磁気変換率βの全体的な増減を調整することができる。そこで、磁気センサ１００は、磁気収束部材の形状をそれぞれ変更して、磁場変換率βの特性を微調整してよい。このような磁気収束部材の形状の変更は、磁場変換率αおよびγにはほとんど影響を及ぼさないので、磁気センサ１００に入力する磁場の分布、磁気センサ１００の配置等に応じて、適切な形状を選択してよい。 Even if the first magnetic flux concentrator member 131, the second magnetic flux concentrator member 132, and the third magnetic flux concentrator member 133 are changed to such shapes, the magnetic sensor 100 is a second modification as shown by the dotted line in FIG. It is possible to obtain characteristics substantially equivalent to the characteristics of the magnetic field conversion rate β of the magnetic sensor 100. Further, depending on the shape of changing the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136, it is possible to change the characteristics of the magnetic field conversion rate β. That is, depending on the shape of changing the fourth magnetic focusing member 134, the fifth magnetic focusing member 135, and the sixth magnetic focusing member 136, the overall shape of the magnetic conversion rate β is not changed without changing the outline of the behavior of the magnetic field conversion rate β. General increase and decrease can be adjusted. Therefore, the magnetic sensor 100 may finely adjust the characteristics of the magnetic field conversion rate β by changing the shape of the magnetic converging member. Such a change in the shape of the magnetic flux concentrating member has little effect on the magnetic field conversion rates α and γ, so that an appropriate shape is obtained according to the distribution of the magnetic field input to the magnetic sensor 100, the arrangement of the magnetic sensor 100, and the like. May be selected.

　図１３は、本実施形態に係る磁気センサ１００の第４の変形例を示す。図１３は、第４の変形例の磁気センサ１００のＺ方向から見た平面視の構成例である。本変形例の磁気センサ１００において、図５に示された本実施形態に係る磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。第４の変形例の磁気センサ１００は、図５に示す磁気センサ１００の構成例において、第２磁気抵抗素子１２２と、第２磁気収束部材１３２と、第１補助磁気収束部材１６１と、第２補助磁気収束部材１６２と、第３補助磁気収束部材１６３と、第５補助磁気収束部材１６５と、を更に備える例を説明する。なお、第２磁気抵抗素子１２２および第２磁気収束部材１３２は、図９で説明した第２磁気抵抗素子１２２および第２磁気収束部材１３２と略同一であるので、ここでは説明を省略する。 FIG. 13 shows a fourth modification of the magnetic sensor 100 according to this embodiment. FIG. 13 is a configuration example of a plan view of the magnetic sensor 100 according to the fourth modification viewed from the Z direction. In the magnetic sensor 100 of the present modification, the same reference numerals are given to substantially the same operations as those of the magnetic sensor 100 according to the present embodiment shown in FIG. The magnetic sensor 100 of the fourth modified example is the same as the configuration of the magnetic sensor 100 shown in FIG. 5 except that the second magnetoresistive element 122, the second magnetic focusing member 132, the first auxiliary magnetic focusing member 161, and the second An example in which the auxiliary magnetic focusing member 162, the third auxiliary magnetic focusing member 163, and the fifth auxiliary magnetic focusing member 165 are further provided will be described. The second magnetoresistive element 122 and the second magnetic converging member 132 are substantially the same as the second magnetoresistive element 122 and the second magnetic converging member 132 described with reference to FIG.

　第１補助磁気収束部材１６１は、第１磁気収束部１１１の第１方向と垂直な第２方向の側部に接続され、第１方向から見て、または平面視で、第１磁気抵抗素子１２１側に突出する。第１補助磁気収束部材１６１が第１磁気抵抗素子１２１側に突出する距離は、第１方向から見て、第１磁気収束部材１３１が第１磁気収束部１１１から第２方向の第１磁気抵抗素子１２１側に突出する距離と略同一でよい。 The first auxiliary magnetic flux concentrator member 161 is connected to a side portion of the first magnetic flux concentrator 111 in the second direction perpendicular to the first direction, and viewed from the first direction or in plan view, the first magnetoresistive element 121. Protrudes to the side. The distance from which the first auxiliary magnetic concentrating member 161 protrudes toward the first magnetoresistive element 121 is the first magnetic resistance of the first magnetic concentrating member 131 from the first magnetic converging portion 111 in the second direction when viewed from the first direction. The distance protruding toward the element 121 may be substantially the same.

　また、第１補助磁気収束部材１６１の第１方向の幅は、第２磁気収束部材１３２の第１方向の幅と略同一でよい。また、第１補助磁気収束部材１６１のＺ方向の高さは、第１磁気収束部１１１および第１磁気収束部材１３１のＺ方向の高さと略同一でよい。第１補助磁気収束部材１６１は、第２方向から見て、第２磁気収束部材１３２と重なるように形成されてよい。第１補助磁気収束部材１６１は、第１磁気収束部１１１および第１磁気収束部材１３１と略同一の磁性材料で形成されてよい。 Further, the width of the first auxiliary magnetic flux concentrator member 161 in the first direction may be substantially the same as the width of the second magnetic flux concentrator member 132 in the first direction. Further, the height of the first auxiliary magnetic flux concentrator member 161 in the Z direction may be substantially the same as the height of the first magnetic flux concentrator 111 and the first magnetic flux concentrator member 131 in the Z direction. The first auxiliary magnetic flux concentrator member 161 may be formed so as to overlap the second magnetic flux concentrator member 132 when viewed from the second direction. The first auxiliary magnetic flux concentrator member 161 may be formed of substantially the same magnetic material as the first magnetic flux concentrator 111 and the first magnetic flux concentrator member 131.

　第２補助磁気収束部材１６２は、第２磁気収束部１１２の第２方向の側部に接続され、第１方向から見て、または平面視で、第２磁気抵抗素子１２２側に突出する。第２補助磁気収束部材１６２が第２磁気抵抗素子１２２側に突出する距離は、第１方向から見て、第２磁気収束部材１３２が第２磁気収束部１１２から第２方向の第２磁気抵抗素子１２２側に突出する距離と略同一でよい。 The second auxiliary magnetic flux concentrator member 162 is connected to the side of the second magnetic flux concentrator 112 in the second direction and protrudes toward the second magnetoresistive element 122 when viewed from the first direction or in plan view. The distance by which the second auxiliary magnetic flux concentrator member 162 protrudes toward the second magnetoresistive element 122 is the second magnetoresistive member 132 in the second direction from the second magnetic flux concentrator 112 when viewed from the first direction. The distance protruding to the element 122 side may be substantially the same.

　また、第２補助磁気収束部材１６２の第１方向の幅は、第１磁気収束部材１３１の第１方向の幅と略同一でよい。また、第２補助磁気収束部材１６２のＺ方向の高さは、第２磁気収束部１１２および第２磁気収束部材１３２のＺ方向の高さと略同一でよい。第２補助磁気収束部材１６２は、第２方向から見て、第１磁気収束部材１３１と重なるように形成されてよい。第２補助磁気収束部材１６２は、第２磁気収束部１１２および第２磁気収束部材１３２と略同一の磁性材料で形成されてよい。 Also, the width of the second auxiliary magnetic flux concentrator member 162 in the first direction may be substantially the same as the width of the first magnetic flux concentrator member 131 in the first direction. The height of the second auxiliary magnetic flux concentrator member 162 in the Z direction may be substantially the same as the height of the second magnetic flux concentrator 112 and the second magnetic flux concentrator member 132 in the Z direction. The second auxiliary magnetic flux concentrator member 162 may be formed so as to overlap the first magnetic flux convergent member 131 when viewed from the second direction. The second auxiliary magnetic flux concentrator member 162 may be formed of substantially the same magnetic material as the second magnetic flux concentrator 112 and the second magnetic flux concentrator member 132.

　第３補助磁気収束部材１６３は、第１磁気収束部１１１の第１方向と垂直な第２方向の側部に接続され、第１方向から見て、または平面視で、第１磁気抵抗素子１２１とは反対側に突出する。第３補助磁気収束部材１６３が第１磁気抵抗素子１２１の反対側に突出する距離は、第１補助磁気収束部材１６１が第１磁気収束部１１１から第２方向の第１磁気抵抗素子１２１側に突出する距離と略同一でよい。 The third auxiliary magnetic flux concentrator member 163 is connected to the side of the first magnetic flux concentrator 111 in the second direction perpendicular to the first direction, and viewed from the first direction or in plan view, the first magnetoresistive element 121. Projects to the opposite side. The distance by which the third auxiliary magnetic concentrating member 163 protrudes to the opposite side of the first magnetoresistive element 121 is such that the first auxiliary magnetic concentrating member 161 moves from the first magnetic converging part 111 toward the first magnetoresistive element 121 in the second direction. It may be substantially the same as the protruding distance.

　また、第３補助磁気収束部材１６３の第１方向の幅は、第１補助磁気収束部材１６１の第１方向の幅と略同一でよい。また、第３補助磁気収束部材１６３のＺ方向の高さは、第１補助磁気収束部材１６１のＺ方向の高さと略同一でよい。即ち、第３補助磁気収束部材１６３は、第１補助磁気収束部材１６１と略同一形状で形成されてよい。また、第３補助磁気収束部材１６３は、第２方向から見て、第２磁気収束部材１３２および／または第１補助磁気収束部材１６１と重なるように形成されてよい。第３補助磁気収束部材１６３は、第１補助磁気収束部材１６１と略同一の磁性材料で形成されてよい。 Also, the width of the third auxiliary magnetic flux concentrator member 163 in the first direction may be substantially the same as the width of the first auxiliary magnetic flux concentrator member 161 in the first direction. The height of the third auxiliary magnetic flux concentrator member 163 in the Z direction may be substantially the same as the height of the first auxiliary magnetic flux concentrator member 161 in the Z direction. That is, the third auxiliary magnetic focusing member 163 may be formed in substantially the same shape as the first auxiliary magnetic focusing member 161. The third auxiliary magnetic flux concentrator member 163 may be formed so as to overlap the second magnetic flux concentrator member 132 and / or the first auxiliary magnetic flux convergent member 161 when viewed from the second direction. The third auxiliary magnetic flux concentrator member 163 may be formed of substantially the same magnetic material as the first auxiliary magnetic flux convergent member 161.

　第５補助磁気収束部材１６５は、第２磁気収束部１１２の第１方向と垂直な第２方向の側部に接続され、第１方向から見て、または平面視で、第２磁気抵抗素子１２２とは反対側に突出する。第５補助磁気収束部材１６５が第２磁気抵抗素子１２２の反対側に突出する距離は、第２補助磁気収束部材１６２が第２磁気収束部１１２から第２方向の第２磁気抵抗素子１２２側に突出する距離と略同一でよい。 The fifth auxiliary magnetic flux concentrator 165 is connected to the side of the second magnetic flux concentrator 112 in the second direction perpendicular to the first direction, and viewed from the first direction or in plan view, the second magnetoresistive element 122. Projects to the opposite side. The distance by which the fifth auxiliary magnetic converging member 165 protrudes to the opposite side of the second magnetoresistive element 122 is such that the second auxiliary magnetic converging member 162 moves from the second magnetic converging part 112 toward the second magnetoresistive element 122 in the second direction. It may be substantially the same as the protruding distance.

　また、第５補助磁気収束部材１６５の第１方向の幅は、第２補助磁気収束部材１６２の第１方向の幅と略同一でよい。また、第５補助磁気収束部材１６５のＺ方向の高さは、第２補助磁気収束部材１６２のＺ方向の高さと略同一でよい。即ち、第５補助磁気収束部材１６５は、第２補助磁気収束部材１６２と略同一形状で形成されてよい。また、第５補助磁気収束部材１６５は、第２方向から見て、第１磁気収束部材１３１および／または第２補助磁気収束部材１６２と重なるように形成されてよい。第５補助磁気収束部材１６５は、第２補助磁気収束部材１６２と略同一の磁性材料で形成されてよい。 Further, the width of the fifth auxiliary magnetic flux concentrator member 165 in the first direction may be substantially the same as the width of the second auxiliary magnetic flux concentrator member 162 in the first direction. Further, the height of the fifth auxiliary magnetic flux concentrator member 165 in the Z direction may be substantially the same as the height of the second auxiliary magnetic flux convergent member 162 in the Z direction. In other words, the fifth auxiliary magnetic focusing member 165 may be formed in substantially the same shape as the second auxiliary magnetic focusing member 162. Further, the fifth auxiliary magnetic focusing member 165 may be formed so as to overlap the first magnetic focusing member 131 and / or the second auxiliary magnetic focusing member 162 when viewed from the second direction. The fifth auxiliary magnetic flux concentrator member 165 may be formed of substantially the same magnetic material as the second auxiliary magnetic flux convergent member 162.

　以上の本変形例の磁気センサ１００は、図５で説明した磁気センサ１００と同様に、Ｘ方向に入力する磁場Ｂ_Ｘと、Ｙ方向に入力する磁場Ｂ_Ｙと、Ｚ方向に入力する磁場Ｂ_Ｚと、を第２方向に変換し、第２方向に変換した磁場を第１磁気抵抗素子１２１および第２磁気抵抗素子１２２に効果的に入力させることができる。また、本変形例の磁気センサ１００は、第１磁気収束部材１３１と、当該第１磁気収束部材１３１と略同一形状に形成された第１補助磁気収束部材１６１および第３補助磁気収束部材１６３とが、第１磁気抵抗素子１２１を挟むように配置されてよい。また、第２磁気収束部材１３２と、当該第２磁気収束部材１３２と略同一形状に形成された第２補助磁気収束部材１６２および第５補助磁気収束部材１６５とが、第２磁気抵抗素子１２２を挟むように配置されてよい。 The magnetic sensor 100 described above according to this modification, similarly to the magnetic sensor 100 described in FIG. 5, and the magnetic field B _X input to the X-direction, and the magnetic field B _Y to be input in the Y direction, a magnetic field input to the Z direction B _Z can be converted into the second direction, and the magnetic field converted in the second direction can be effectively input to the first magnetoresistive element 121 and the second magnetoresistive element 122. In addition, the magnetic sensor 100 according to the present modification includes a first magnetic flux concentrator member 131, a first auxiliary magnetic flux concentrator member 161 and a third auxiliary magnetic flux convergent member 163 that are formed in substantially the same shape as the first magnetic flux convergent member 131. However, they may be arranged so as to sandwich the first magnetoresistive element 121. Further, the second magnetic focusing member 132 and the second auxiliary magnetic focusing member 162 and the fifth auxiliary magnetic focusing member 165 formed in substantially the same shape as the second magnetic focusing member 132 form the second magnetoresistive element 122. You may arrange | position so that it may pinch | interpose.

　これにより、本変形例の磁気センサ１００は、Ｘ方向に入力する磁場Ｂ_Ｘが、磁気抵抗素子の両端に配置された磁気収束部材にそれぞれ収束されるので、磁気抵抗素子の端部に入力する磁場Ｂ_Ｘの増大を抑制することができる。すなわち、例えば第１磁気抵抗素子１２１の＋Ｙ方向側の端＋Ｙ_０近傍の磁場変換率αの値の増大を抑制することができ、位置０からＹ_０の間において、略一定の磁場変換率αにできる。なお、図１３に示す第４の変形例の磁気センサ１００は、第１補助磁気収束部材１６１、第２補助磁気収束部材１６２、第３補助磁気収束部材１６３、および第５補助磁気収束部材１６５を備える例を説明したが、これに限定されるものではない。例えば、磁気センサ１００は、第１補助磁気収束部材１６１、第２補助磁気収束部材１６２、第３補助磁気収束部材１６３、および第５補助磁気収束部材１６５のうち、いずれか１つを有する構成であってもよい。 Accordingly, the magnetic sensor 100 of the present modification, the magnetic field B _X input to the X direction, because it is focused respectively on the magnetic flux concentrator member disposed at both ends of the magnetoresistive element, and inputs to the ends of the magnetoresistive element it is possible to suppress the increase of the magnetic field B _X. That is, for example, an increase in the value of the magnetic field conversion rate α in the vicinity of the + Y direction side end + Y _{0 of} the first magnetoresistive element 121 can be suppressed, and the substantially constant magnetic field conversion rate α between the positions 0 and Y ₀ can be suppressed. Can be. Note that the magnetic sensor 100 of the fourth modified example shown in FIG. 13 includes a first auxiliary magnetic focusing member 161, a second auxiliary magnetic focusing member 162, a third auxiliary magnetic focusing member 163, and a fifth auxiliary magnetic focusing member 165. Although the example provided is demonstrated, it is not limited to this. For example, the magnetic sensor 100 has a configuration including any one of a first auxiliary magnetic focusing member 161, a second auxiliary magnetic focusing member 162, a third auxiliary magnetic focusing member 163, and a fifth auxiliary magnetic focusing member 165. There may be.

　図１４は、本実施形態に係る磁気センサ１００の第５の変形例を示す。図１４は、第５の変形例の磁気センサ１００のＺ方向から見た平面視の構成例である。本変形例の磁気センサ１００において、図９に示された第１の変形例の磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。第５の変形例の磁気センサ１００は、図９に示す磁気センサ１００の構成例において、第１補助磁気収束部材１６１と、第２補助磁気収束部材１６２と、第３補助磁気収束部材１６３と、第４補助磁気収束部材１６４と、第５補助磁気収束部材１６５と、第６補助磁気収束部材１６６と、を更に備える例を説明する。なお、第１補助磁気収束部材１６１、第２補助磁気収束部材１６２、第３補助磁気収束部材１６３、および第５補助磁気収束部材１６５は、図１３で説明した補助磁気収束部材と略同一であるので、ここでは説明を省略する。 FIG. 14 shows a fifth modification of the magnetic sensor 100 according to this embodiment. FIG. 14 is a configuration example of a plan view of the magnetic sensor 100 according to the fifth modification viewed from the Z direction. In the magnetic sensor 100 of this modification, the same reference numerals are given to the substantially same operations as those of the magnetic sensor 100 of the first modification shown in FIG. 9, and the description thereof is omitted. The magnetic sensor 100 of the fifth modified example includes a first auxiliary magnetic focusing member 161, a second auxiliary magnetic focusing member 162, a third auxiliary magnetic focusing member 163 in the configuration example of the magnetic sensor 100 shown in FIG. An example in which the fourth auxiliary magnetic flux concentrator member 164, the fifth auxiliary magnetic flux convergent member 165, and the sixth auxiliary magnetic flux convergent member 166 are further provided will be described. Note that the first auxiliary magnetic focusing member 161, the second auxiliary magnetic focusing member 162, the third auxiliary magnetic focusing member 163, and the fifth auxiliary magnetic focusing member 165 are substantially the same as the auxiliary magnetic focusing member described in FIG. Therefore, explanation is omitted here.

　即ち、第３補助磁気収束部材１６３は、第１磁気収束部１１１の第２方向の側部に接続され、第１方向から見て、または平面視で、第３磁気抵抗素子１２３側に突出する。また、第４補助磁気収束部材１６４は、第３磁気収束部１１３の第２方向の側部に接続され、第１方向から見て、または平面視で、第４磁気抵抗素子１２４側に突出する。第４補助磁気収束部材１６４が第４磁気抵抗素子１２４側に突出する距離は、第１方向から見て、第３磁気収束部材１３３が第３磁気収束部１１３から第２方向の第４磁気抵抗素子１２４側に突出する距離と略同一でよい。 That is, the third auxiliary magnetic flux concentrator member 163 is connected to the side portion in the second direction of the first magnetic flux concentrator 111 and protrudes toward the third magnetoresistive element 123 when viewed from the first direction or in plan view. . The fourth auxiliary magnetic flux concentrator member 164 is connected to a side portion in the second direction of the third magnetic flux concentrator 113 and protrudes toward the fourth magnetoresistive element 124 when viewed from the first direction or in plan view. . The distance by which the fourth auxiliary magnetic flux concentrator member 164 protrudes toward the fourth magnetoresistive element 124 is the fourth magnetic resistance of the third magnetic flux concentrator member 133 from the third magnetic flux concentrator 113 in the second direction when viewed from the first direction. The distance protruding to the element 124 side may be substantially the same.

　また、第４補助磁気収束部材１６４の第１方向の幅は、第３磁気収束部材１３３の第１方向の幅と略同一でよい。また、第４補助磁気収束部材１６４のＺ方向の高さは、第３磁気収束部１１３および第３磁気収束部材１３３のＺ方向の高さと略同一でよい。第４補助磁気収束部材１６４は、第２方向から見て、第１磁気収束部材１３１と重なるように形成されてよい。第４補助磁気収束部材１６４は、第３磁気収束部１１３および第３磁気収束部材１３３と略同一の磁性材料で形成されてよい。 Also, the width of the fourth auxiliary magnetic flux concentrator member 164 in the first direction may be substantially the same as the width of the third magnetic flux concentrator member 133 in the first direction. Further, the height of the fourth auxiliary magnetic flux concentrator member 164 in the Z direction may be substantially the same as the height of the third magnetic flux concentrator 113 and the third magnetic flux concentrator member 133 in the Z direction. The fourth auxiliary magnetic flux concentrator member 164 may be formed to overlap the first magnetic flux convergent member 131 when viewed from the second direction. The fourth auxiliary magnetic flux concentrator member 164 may be formed of substantially the same magnetic material as the third magnetic flux concentrator 113 and the third magnetic flux concentrator member 133.

　第６補助磁気収束部材１６６は、第３磁気収束部１１３の第２方向の側部に接続され、第１方向から見て、または平面視で、第４磁気抵抗素子１２４とは反対側に突出する。第６補助磁気収束部材１６６が第４磁気抵抗素子１２４の反対側に突出する距離は、第１方向から見て、第４補助磁気収束部材１６４が第３磁気収束部１１３から第２方向の第４磁気抵抗素子１２４側に突出する距離と略同一でよい。 The sixth auxiliary magnetic flux concentrator member 166 is connected to the side portion of the third magnetic flux concentrator 113 in the second direction, and protrudes to the opposite side of the fourth magnetoresistive element 124 when viewed from the first direction or in plan view. To do. The distance by which the sixth auxiliary magnetic focusing member 166 protrudes to the opposite side of the fourth magnetoresistive element 124 is the fourth auxiliary magnetic focusing member 164 from the third magnetic focusing portion 113 in the second direction when viewed from the first direction. It may be substantially the same as the distance protruding to the 4 magnetoresistive element 124 side.

　また、第６補助磁気収束部材１６６の第１方向の幅は、第４補助磁気収束部材１６４の第１方向の幅と略同一でよい。また、第６補助磁気収束部材１６６のＺ方向の高さは、第４補助磁気収束部材１６４のＺ方向の高さと略同一でよい。即ち、第６補助磁気収束部材１６６は、第４補助磁気収束部材１６４と略同一形状で形成されてよい。また、第６補助磁気収束部材１６６は、第２方向から見て、第１磁気収束部材１３１および／または第４補助磁気収束部材１６４と重なるように形成されてよい。第６補助磁気収束部材１６６は、第４補助磁気収束部材１６４と略同一の磁性材料で形成されてよい。 The width of the sixth auxiliary magnetic flux concentrator 166 in the first direction may be substantially the same as the width of the fourth auxiliary magnetic flux concentrator 164 in the first direction. Further, the height of the sixth auxiliary magnetic flux concentrator 166 in the Z direction may be substantially the same as the height of the fourth auxiliary magnetic flux concentrator 164 in the Z direction. That is, the sixth auxiliary magnetic focusing member 166 may be formed in substantially the same shape as the fourth auxiliary magnetic focusing member 164. Further, the sixth auxiliary magnetic focusing member 166 may be formed so as to overlap the first magnetic focusing member 131 and / or the fourth auxiliary magnetic focusing member 164 when viewed from the second direction. The sixth auxiliary magnetic focusing member 166 may be formed of substantially the same magnetic material as the fourth auxiliary magnetic focusing member 164.

　図１４の磁気センサ１００は、図９で示した磁気センサ１００と同様に、第１磁気収束部１１１のＹ方向の中心軸と第５磁気抵抗素子１２５のＹ方向の中心軸とが平面視で一致するように配置され、磁気センサ１００が当該２つの中心軸を含むＹＺ面に対して面対称に形成された例を示す。また、磁気センサ１００は、Ｘ方向に入力する磁場Ｂ_Ｘと、Ｙ方向に入力する磁場Ｂ_Ｙと、Ｚ方向に入力する磁場Ｂ_Ｚと、を第２方向に変換させ、第２方向に変換した磁場を第１磁気抵抗素子１２１から第４磁気抵抗素子１２４により効果的に入力させることができる。 As in the magnetic sensor 100 shown in FIG. 9, the magnetic sensor 100 of FIG. 14 has a central axis in the Y direction of the first magnetic converging part 111 and a central axis in the Y direction of the fifth magnetoresistive element 125 in plan view. An example is shown in which the magnetic sensors 100 are arranged so as to coincide with each other and are symmetrical with respect to a YZ plane including the two central axes. The magnetic sensor 100 includes a magnetic field B _X input to the X-direction, and the magnetic field B _Y to be input in the Y direction, to convert the magnetic field B _Z to enter in the Z direction, the second direction, into a second direction The applied magnetic field can be effectively input from the first magnetoresistive element 121 to the fourth magnetoresistive element 124.

　また、本変形例の磁気センサ１００は、第１磁気収束部材１３１と、当該第１磁気収束部材１３１と略同一形状に形成された第１補助磁気収束部材１６１および第３補助磁気収束部材１６３とが、第１磁気抵抗素子１２１および第３磁気抵抗素子１２３を挟むように配置されてよい。また、本変形例の磁気センサ１００は、第３磁気収束部材１３３と、当該第３磁気収束部材１３３と略同一形状に形成された第４補助磁気収束部材１６４および第６補助磁気収束部材１６６とが、第４磁気抵抗素子１２４を挟むように配置されてよい。 In addition, the magnetic sensor 100 according to the present modification includes a first magnetic flux concentrator member 131, a first auxiliary magnetic flux concentrator member 161 and a third auxiliary magnetic flux convergent member 163 that are formed in substantially the same shape as the first magnetic flux convergent member 131. However, they may be arranged so as to sandwich the first magnetoresistive element 121 and the third magnetoresistive element 123. In addition, the magnetic sensor 100 of the present modification includes a third magnetic focusing member 133, a fourth auxiliary magnetic focusing member 164 and a sixth auxiliary magnetic focusing member 166 formed in substantially the same shape as the third magnetic focusing member 133. However, they may be arranged so as to sandwich the fourth magnetoresistive element 124.

　これにより、本変形例の磁気センサ１００は、Ｘ方向に入力する磁場Ｂ_Ｘが、磁気抵抗素子の両端に配置された磁気収束部材にそれぞれ収束されるので、磁気抵抗素子の端部に入力する磁場Ｂ_Ｘの増大を抑制することができる。すなわち、例えば第１磁気抵抗素子１２１の＋Ｙ方向側の端＋Ｙ_０近傍の磁場変換率αの値の増大を抑制することができ、位置０からＹ_０の間において、略一定の磁場変換率αにできる。なお、図１４に示す第５の変形例の磁気センサ１００は、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６を備える例を説明したが、これに限定されるものではない。例えば、磁気センサ１００は、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６のうち、いずれか１つを有する構成であってもよい。 Accordingly, the magnetic sensor 100 of the present modification, the magnetic field B _X input to the X direction, because it is focused respectively on the magnetic flux concentrator member disposed at both ends of the magnetoresistive element, and inputs to the ends of the magnetoresistive element it is possible to suppress the increase of the magnetic field B _X. That is, for example, an increase in the value of the magnetic field conversion rate α in the vicinity of the + Y direction side end + Y _{0 of} the first magnetoresistive element 121 can be suppressed, and the substantially constant magnetic field conversion rate α between the positions 0 and Y ₀ can be suppressed. Can be. In addition, although the magnetic sensor 100 of the 5th modification shown in FIG. 14 demonstrated the example provided with the 6th auxiliary | assistant magnetic converging member 166 from the 1st auxiliary | assistant magnetic converging member 161, it is not limited to this. For example, the magnetic sensor 100 may have a configuration including any one of the first auxiliary magnetic focusing member 161 to the sixth auxiliary magnetic focusing member 166.

　図１５は、本実施形態に係る磁気センサ１００の第６の変形例を示す。図１５は、第６の変形例の磁気センサ１００のＺ方向から見た平面視の構成例である。本変形例の磁気センサ１００において、図１１に示された第２の変形例の磁気センサ１００の動作と略同一のものには同一の符号を付け、説明を省略する。第６の変形例の磁気センサ１００は、図１１に示す磁気センサ１００の構成例において、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６を更に備える例を説明する。なお、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６は、図１４で説明した補助磁気収束部材と略同一であるので、ここでは説明を省略する。 FIG. 15 shows a sixth modification of the magnetic sensor 100 according to this embodiment. FIG. 15 is a configuration example in plan view of the magnetic sensor 100 according to the sixth modification viewed from the Z direction. In the magnetic sensor 100 of this modification, the same reference numerals are given to the substantially same operations as those of the magnetic sensor 100 of the second modification shown in FIG. The magnetic sensor 100 of the sixth modification will be described with an example in which the first auxiliary magnetic focusing member 161 to the sixth auxiliary magnetic focusing member 166 are further provided in the configuration example of the magnetic sensor 100 shown in FIG. The first auxiliary magnetic focusing member 161 to the sixth auxiliary magnetic focusing member 166 are substantially the same as the auxiliary magnetic focusing member described with reference to FIG.

　本変形例の磁気センサ１００は、図１４に示す磁気センサ１００と同様に、略同一形状の磁気収束部材が、磁気抵抗素子を挟むように配置されてよい。これにより、本変形例の磁気センサ１００は、Ｘ方向に入力する磁場Ｂ_Ｘが、磁気抵抗素子の両端に配置された磁気収束部材にそれぞれ収束されるので、磁気抵抗素子の端部に入力する磁場Ｂ_Ｘの増大を抑制することができる。すなわち、例えば第１磁気抵抗素子１２１の＋Ｙ方向側の端＋Ｙ_０近傍の磁場変換率αの値の増大を抑制することができ、位置０からＹ_０の間において、略一定の磁場変換率αにできる。なお、図１５に示す第６の変形例の磁気センサ１００は、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６を備える例を説明したが、これに限定されるものではない。例えば、磁気センサ１００は、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６のうち、いずれか１つを有する構成であってもよい。 In the magnetic sensor 100 of this modification, similarly to the magnetic sensor 100 shown in FIG. 14, magnetic converging members having substantially the same shape may be arranged so as to sandwich the magnetoresistive element. Accordingly, the magnetic sensor 100 of the present modification, the magnetic field B _X input to the X direction, because it is focused respectively on the magnetic flux concentrator member disposed at both ends of the magnetoresistive element, and inputs to the ends of the magnetoresistive element it is possible to suppress the increase of the magnetic field B _X. That is, for example, an increase in the value of the magnetic field conversion rate α in the vicinity of the + Y direction side end + Y _{0 of} the first magnetoresistive element 121 can be suppressed, and the substantially constant magnetic field conversion rate α between the positions 0 and Y ₀ can be suppressed. Can be. In addition, although the magnetic sensor 100 of the 6th modification shown in FIG. 15 demonstrated the example provided with the 6th auxiliary | assistant magnetic converging member 166 from the 1st auxiliary | assistant magnetic converging member 161, it is not limited to this. For example, the magnetic sensor 100 may have a configuration including any one of the first auxiliary magnetic focusing member 161 to the sixth auxiliary magnetic focusing member 166.

　図１６は、本実施形態に係る第１磁気抵抗素子１２１のＹ方向の位置に対する磁場変換率α、β、およびγの変化の概略構成例を示す。図１６の横軸は、図１５に示す第１磁気抵抗素子１２１のＹ方向の位置に対応する。より具体的には、第１磁気抵抗素子１２１の長さをＹ_０とすると、当該Ｙ方向の位置を０からＹ_０と示す。即ち、図１６の横軸において、第１磁気抵抗素子１２１の－Ｙ方向側の端の位置が０で、第１磁気抵抗素子１２１の＋Ｙ方向側の端の位置がＹ_０を示す。 FIG. 16 shows a schematic configuration example of changes in the magnetic field conversion rates α, β, and γ with respect to the position in the Y direction of the first magnetoresistive element 121 according to the present embodiment. The horizontal axis in FIG. 16 corresponds to the position in the Y direction of the first magnetoresistive element 121 shown in FIG. More specifically, assuming that the length of the first magnetoresistive element 121 is Y ₀ , the position in the Y direction is indicated as 0 to Y ₀ . That is, in the horizontal axis of FIG. 16, at the position of the -Y direction end of the first magnetoresistive element 121 is 0, the position of the + Y direction side of the end of the first magnetoresistive element 121 indicates Y _0.

　また、図１６の縦軸は、磁場変換率α、β、およびγを示す。磁場変換率α、β、およびγは、積分要素法による磁場数値解析にて求めた値の例である。そして、図１６は、図７において点線で示した第２の変形例の磁気センサ１００が有する第１磁気抵抗素子１２１の磁場変換率α、β、およびγを、同様に点線で示す。また、図１６は、図１５で説明した第６の変形例の磁気センサ１００が有する第１磁気抵抗素子１２１の磁場変換率α、β、およびγを、実線で示す。 Also, the vertical axis in FIG. 16 indicates the magnetic field conversion rates α, β, and γ. The magnetic field conversion rates α, β, and γ are examples of values obtained by magnetic field numerical analysis by the integral element method. 16 similarly shows the magnetic field conversion rates α, β, and γ of the first magnetoresistive element 121 included in the magnetic sensor 100 of the second modification shown by the dotted line in FIG. 7 by the dotted line. FIG. 16 shows the magnetic field conversion rates α, β, and γ of the first magnetoresistive element 121 included in the magnetic sensor 100 of the sixth modification described in FIG. 15 by solid lines.

　即ち、図１６は、図１１で説明した第２の変形例の磁気センサ１００と、当該第２の変形例の磁気センサ１００に第１補助磁気収束部材１６１から第６補助磁気収束部材１６６が設けられた第６の変形例の磁気センサ１００との、比較結果の一例を示す。これより、第６の変形例の磁気センサ１００は、第２の変形例の磁気センサ１００と同様に、図７の磁場変換率βの特性を、Ｙ軸方向に略平行に移動させ、Ｙ方向の検出感度を向上させることができる。また、第６の変形例の磁気センサ１００は、第１補助磁気収束部材１６１から第６補助磁気収束部材１６６を有するので、磁場変換率βおよびγの特性を維持したままで、例えば、第１磁気抵抗素子１２１の＋Ｙ方向側の端Ｙ_０近傍の磁場変換率αの増大を抑制することができ、位置０からＹ_０の間において、略一定の磁場変換率αを提供できる。 That is, FIG. 16 shows that the magnetic sensor 100 of the second modification described in FIG. 11 and the first auxiliary magnetic focusing member 161 to the sixth auxiliary magnetic focusing member 166 are provided in the magnetic sensor 100 of the second modification. An example of a comparison result with the magnetic sensor 100 of the sixth modified example is shown. Thus, similarly to the magnetic sensor 100 of the second modified example, the magnetic sensor 100 of the sixth modified example moves the characteristics of the magnetic field conversion rate β in FIG. Detection sensitivity can be improved. In addition, since the magnetic sensor 100 of the sixth modified example includes the first auxiliary magnetic focusing member 161 to the sixth auxiliary magnetic focusing member 166, for example, the first auxiliary magnetic focusing member 161 maintains the characteristics of the magnetic field conversion rates β and γ. An increase in the magnetic field conversion rate α in the vicinity of the end Y ₀ on the + Y direction side of the magnetoresistive element 121 can be suppressed, and a substantially constant magnetic field conversion rate α can be provided between the position 0 and Y ₀ .

　以上の本実施形態の磁気センサ１００は、小型で、リニアリティがよく、感度の高いセンサを提供できることを説明した。これに加えて、磁気センサ１００の実装面積がより広い場合は、磁気収束部、磁気抵抗素子、および磁気収束部材の数を増加させてよい。例えば、図５、図９、図１１、図１２、図１３、図１４、および図１５で示す磁気センサ１００を、Ｘ方向に複数配置してよい。この場合、さらに高感度なセンサを形成することができる。 It has been described that the magnetic sensor 100 of the present embodiment as described above can provide a sensor having a small size, good linearity, and high sensitivity. In addition to this, when the mounting area of the magnetic sensor 100 is larger, the number of magnetic converging portions, magnetoresistive elements, and magnetic converging members may be increased. For example, a plurality of magnetic sensors 100 shown in FIGS. 5, 9, 11, 12, 13, 14, and 15 may be arranged in the X direction. In this case, a sensor with higher sensitivity can be formed.

　図１７は、本実施形態に係る磁気センサ１００の第７の変形例を示す。図１７は、一例として、図９、図１１、図１２、図１４、および図１５で示す磁気センサ１００から、抵抗値の変化を取得して入力磁場の成分を算出する算出部を更に備える構成例を示す。図１７において、磁気収束部、磁気収束部材、および補助磁気収束部材の記載は省略する。第７の変形例の磁気センサ１００は、定電流源１４０と、算出部１５０とを更に備える。 FIG. 17 shows a seventh modification of the magnetic sensor 100 according to this embodiment. FIG. 17 shows, as an example, a configuration further including a calculation unit that obtains a change in resistance value and calculates a component of the input magnetic field from the magnetic sensor 100 shown in FIGS. 9, 11, 12, 14, and 15. An example is shown. In FIG. 17, the description of the magnetic flux concentrator, the magnetic flux concentrator member, and the auxiliary magnetic flux concentrator member is omitted. The magnetic sensor 100 of the seventh modified example further includes a constant current source 140 and a calculation unit 150.

　定電流源１４０は、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５に対応してそれぞれ設けられ、一定の電流をそれぞれ流す。ここで、図９、図１１、図１２、図１４、および図１５で示す磁気センサ１００は、磁気抵抗素子の全領域を用いてリニアな領域の範囲内で磁場を検出することができるので、定電流源１４０は、磁気抵抗素子の一方の端に接続されてよく、当該一方の端から他の端へと一定の電流をそれぞれ流してよい。 The constant current source 140 is provided corresponding to each of the first magnetoresistive element 121 to the fifth magnetoresistive element 125 and allows a constant current to flow. Here, the magnetic sensor 100 shown in FIG. 9, FIG. 11, FIG. 12, FIG. 14, and FIG. 15 can detect the magnetic field within the linear region using the entire region of the magnetoresistive element. The constant current source 140 may be connected to one end of the magnetoresistive element, and a constant current may flow from the one end to the other end.

　算出部１５０は、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５のそれぞれの磁気抵抗の変化に基づき、入力された磁場の方向および大きさを算出する。第７の変形例の算出部１５０は、第１磁気抵抗素子１２１から第５磁気抵抗素子１２５のそれぞれの磁気抵抗の変化に基づき、入力された磁場の方向および大きさを算出する例を示す。この場合、算出部１５０は、各磁気抵抗素子に接続され、（数６）式に示された抵抗値の変化を取得して、（数７）式に基づき、入力磁場の各成分を算出する。（数７）式は、乗算と加算の単純な式なので、算出部１５０は、電子回路等で簡便に構成することができる。 The calculation unit 150 calculates the direction and magnitude of the input magnetic field based on the change in the magnetic resistance of each of the first magnetoresistance element 121 to the fifth magnetoresistance element 125. The calculation unit 150 of the seventh modification shows an example in which the direction and magnitude of the input magnetic field are calculated based on changes in the respective magnetoresistances of the first magnetoresistance element 121 to the fifth magnetoresistance element 125. In this case, the calculation unit 150 is connected to each magnetoresistive element, obtains the change in resistance value shown in Equation (6), and calculates each component of the input magnetic field based on Equation (7). . Since Expression (7) is a simple expression of multiplication and addition, the calculation unit 150 can be easily configured with an electronic circuit or the like.

　以上の第７の変形例の磁気センサ１００は、５つの磁気抵抗素子を備える磁気センサ１００について説明した。これに代えて、磁気センサ１００は、４つの磁気抵抗素子に接続されてもよい。この場合、算出部１５０は、第１磁気抵抗素子１２１から第４磁気抵抗素子１２４に接続され、それぞれの磁気抵抗の変化に基づいて入力磁場の各成分を算出してよい。 The magnetic sensor 100 of the seventh modified example has been described for the magnetic sensor 100 including five magnetoresistive elements. Instead of this, the magnetic sensor 100 may be connected to four magnetoresistive elements. In this case, the calculating unit 150 may be connected to the first magnetoresistive element 121 to the fourth magnetoresistive element 124 and calculate each component of the input magnetic field based on the change in the respective magnetoresistance.

　この場合、算出部１５０は、磁場の入力が零の場合のそれぞれの磁気抵抗素子の抵抗値Ｒ_０を、予め取得し、メモリ等に記憶してよい。これによって、算出部１５０は、（数７）式を用いることができ、入力磁場の各成分を算出することができる。また、この場合、磁気センサ１００は、第５磁気抵抗素子１２５を設けなくてもよい。 In this case, the calculation unit 150 may acquire in advance the resistance value _R0 of each magnetoresistive element when the input of the magnetic field is zero and store it in a memory or the like. Thereby, the calculation unit 150 can use the equation (7) and can calculate each component of the input magnetic field. In this case, the magnetic sensor 100 may not include the fifth magnetoresistive element 125.

　また、以上の第７の変形例の磁気センサ１００は、定電流源１４０が磁気抵抗素子に対応して複数設けられることを説明した。これに代えて、磁気センサ１００は、定電流源１４０の出力をスイッチ等で切り替える切替部を有し、測定に用いる磁気抵抗素子に定電流を流すように切り替えてもよい。これによって、磁気センサ１００は、定電流源１４０の数を低減することができる。 Also, in the magnetic sensor 100 of the seventh modified example described above, it has been described that a plurality of constant current sources 140 are provided corresponding to the magnetoresistive elements. Instead, the magnetic sensor 100 may include a switching unit that switches the output of the constant current source 140 with a switch or the like, and may switch so that a constant current flows through the magnetoresistive element used for measurement. Thereby, the magnetic sensor 100 can reduce the number of the constant current sources 140.

　以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、請求の範囲の記載から明らかである。 As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

　請求の範囲、明細書、および図面中において示した装置、システム、プログラム、および方法における動作、手順、ステップ、および段階等の各処理の実行順序は、特段「より前に」、「先立って」等と明示しておらず、また、前の処理の出力を後の処理で用いるのでない限り、任意の順序で実現しうることに留意すべきである。請求の範囲、明細書、および図面中の動作フローに関して、便宜上「まず、」、「次に、」等を用いて説明したとしても、この順で実施することが必須であることを意味するものではない。 The execution order of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior”. It should be noted that they can be implemented in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for the sake of convenience, it means that it is essential to carry out in this order. is not.

２０　基板、３０　絶縁層、１００　磁気センサ、１１０　磁気収束部、１１１　第１磁気収束部、１１２　第２磁気収束部、１１３　第３磁気収束部、１２０　磁気抵抗素子、１２１　第１磁気抵抗素子、１２２　第２磁気抵抗素子、１２３　第３磁気抵抗素子、１２４　第４磁気抵抗素子、１２５　第５磁気抵抗素子、１３１　第１磁気収束部材、１３２　第２磁気収束部材、１３３　第３磁気収束部材、１３４　第４磁気収束部材、１３５　第５磁気収束部材、１３６　第６磁気収束部材、１４０　定電流源、１５０　算出部、１６１　第１補助磁気収束部材、１６２　第２補助磁気収束部材、１６３　第３補助磁気収束部材、１６４　第４補助磁気収束部材、１６５　第５補助磁気収束部材、１６６　第６補助磁気収束部材 20 substrate, 30 insulating layer, 100 magnetic sensor, 110 magnetic converging unit, 111 first magnetic converging unit, 112 second magnetic converging unit, 113 third magnetic converging unit, 120 magnetic resistance element, 121 first magnetic resistance element, 122 2nd magnetoresistive element, 123 3rd magnetoresistive element, 124 4th magnetoresistive element, 125 5th magnetoresistive element, 131 1st magnetic converging member, 132 2nd magnetic converging member, 133 3rd magnetic converging member, 134 th 4 magnetic focusing member, 135 fifth magnetic focusing member, 136 sixth magnetic focusing member, 140 constant current source, 150 calculation unit, 161 first auxiliary magnetic focusing member, 162 second auxiliary magnetic focusing member, 163 third auxiliary magnetic convergence Member, 164 fourth auxiliary magnetic focusing member, 165 fifth auxiliary magnetic focusing member, 166 sixth auxiliary magnetic focusing member

Claims

　第１方向に延伸する第１磁気収束部と、
　前記第１方向に延伸し、前記第１磁気収束部の第１端部よりも前記第１方向に延伸する第２磁気収束部と、
　平面視で、前記第１磁気収束部および前記第２磁気収束部の間で前記第１方向に延伸する第１磁気抵抗素子と、
　前記第１磁気収束部の前記第１端部に接続され、前記第１方向から見て、または平面視で、前記第１端部から前記第１磁気抵抗素子側に突出した第１磁気収束部材と、
　を備える磁気センサ。 A first magnetic converging portion extending in a first direction;
A second magnetic flux concentrator extending in the first direction and extending in the first direction than the first end of the first magnetic flux concentrator;
A first magnetoresistive element extending in the first direction between the first magnetic converging portion and the second magnetic converging portion in plan view;
A first magnetic flux concentrator member connected to the first end portion of the first magnetic flux concentrator and projecting from the first end portion toward the first magnetoresistive element when viewed from the first direction or in plan view. When,
A magnetic sensor comprising:
　前記第１磁気収束部材は、前記第１方向から見て、前記第１端部から前記第２磁気収束部側へと延伸する請求項１に記載の磁気センサ。 The magnetic sensor according to claim 1, wherein the first magnetic flux concentrator member extends from the first end portion to the second magnetic flux convergent portion side when viewed from the first direction.
　前記第１磁気収束部材は、前記第１方向と垂直な断面が前記第１磁気収束部の前記第１方向と垂直な断面よりも大きい請求項１または２に記載の磁気センサ。 The magnetic sensor according to claim 1 or 2, wherein the first magnetic flux concentrator member has a cross section perpendicular to the first direction larger than a cross section perpendicular to the first direction of the first magnetic flux concentrator.
　前記第１磁気抵抗素子は、前記第２磁気収束部よりも前記第１磁気収束部までの距離が小さい請求項１から３のいずれか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 3, wherein the first magnetoresistive element has a smaller distance to the first magnetic converging part than the second magnetic converging part.
　平面視で、前記第１磁気収束部および前記第２磁気収束部の間で前記第１方向に延伸し、前記第１磁気収束部よりも前記第２磁気収束部に近い第２磁気抵抗素子を備える請求項１から４のいずれか一項に記載の磁気センサ。 In plan view, a second magnetoresistive element that extends in the first direction between the first magnetic converging part and the second magnetic converging part and is closer to the second magnetic converging part than the first magnetic converging part The magnetic sensor as described in any one of Claim 1 to 4 provided.
　前記第１磁気収束部の前記第１方向とは反対側の端部は、前記第２磁気収束部の前記第１方向とは反対側の第２端部よりも前記第１方向とは反対方向に延伸し、
　前記第２磁気収束部の前記第２端部に接続され、前記第１方向から見て、または平面視で、前記第２端部から前記第１磁気抵抗素子側に突出した第２磁気収束部材を備える請求項５に記載の磁気センサ。 The end of the first magnetic flux concentrator opposite to the first direction is opposite to the first direction than the second end of the second magnetic concentrator opposite to the first direction. Stretched to
A second magnetic flux concentrator member connected to the second end portion of the second magnetic flux concentrating portion and projecting from the second end portion toward the first magnetoresistive element when viewed from the first direction or in plan view. A magnetic sensor according to claim 5.
　前記第２磁気収束部材は、平面視で、多角形の形状を有する請求項６に記載の磁気センサ。 The magnetic sensor according to claim 6, wherein the second magnetic flux concentrating member has a polygonal shape in plan view.
　前記第１磁気収束部の第１方向と垂直な第２方向の側部に接続され、前記第１方向から見て、または平面視で、前記第１磁気抵抗素子側に突出した第１補助磁気収束部材と、
　前記第２磁気収束部の前記第２方向の側部に接続され、前記第１方向から見て、または平面視で、前記第２磁気抵抗素子側に突出した第２補助磁気収束部材と、
を備える請求項６または７に記載の磁気センサ。 A first auxiliary magnet which is connected to a side portion in a second direction perpendicular to the first direction of the first magnetic converging portion and protrudes toward the first magnetoresistive element when viewed from the first direction or in plan view. A converging member;
A second auxiliary magnetic flux concentrator member connected to a side portion of the second magnetic flux concentrator in the second direction and protruding toward the second magnetoresistive element in a plan view when viewed from the first direction;
A magnetic sensor according to claim 6 or 7.
　第１方向に延伸し、前記第１磁気収束部の第１端部よりも前記第１方向に延伸され、前記第１磁気収束部に対し前記第２磁気収束部とは反対側に設けられた第３磁気収束部と、
　平面視で、前記第１磁気収束部および前記第３磁気収束部の間で前記第１方向に延伸する第３磁気抵抗素子と、
　を更に備える請求項７または８に記載の磁気センサ。 Extending in the first direction, extending in the first direction from the first end of the first magnetic converging part, and provided on the opposite side of the second magnetic converging part with respect to the first magnetic converging part A third magnetic convergence part;
A third magnetoresistive element extending in the first direction between the first magnetic converging part and the third magnetic converging part in plan view;
The magnetic sensor according to claim 7 or 8, further comprising:
　前記第１磁気収束部の前記第１端部とは反対側の端部は、前記第３磁気収束部の前記第１方向とは反対側の第３端部よりも前記第１方向とは反対方向に延伸され、
　前記第３磁気収束部の前記第３端部に接続され、前記第１方向から見て、または平面視で、前記第３端部から前記第３磁気抵抗素子側に突出した第３磁気収束部材を備える請求項９に記載の磁気センサ。 The end of the first magnetic converging part opposite to the first end is opposite to the first direction than the third end of the third magnetic converging part opposite to the first direction. Stretched in the direction,
A third magnetic flux concentrator member connected to the third end portion of the third magnetic flux concentrating portion and projecting from the third end portion toward the third magnetoresistive element when viewed from the first direction or in plan view. A magnetic sensor according to claim 9.
　前記第３磁気収束部材は、平面視で、多角形の形状を有する請求項１０に記載の磁気センサ。 The magnetic sensor according to claim 10, wherein the third magnetic flux concentrating member has a polygonal shape in plan view.
　前記第３磁気抵抗素子は、前記第３磁気収束部よりも前記第１磁気収束部との距離が小さく、
　平面視で、前記第１磁気収束部および前記第３磁気収束部の間で前記第１方向に延伸し、前記第１磁気収束部よりも前記第３磁気収束部との距離が小さい第４磁気抵抗素子を備える請求項９から１１のいずれか一項に記載の磁気センサ。 The third magnetoresistive element has a smaller distance from the first magnetic converging part than the third magnetic converging part,
A fourth magnet that extends in the first direction between the first magnetic converging part and the third magnetic converging part in a plan view and has a smaller distance from the third magnetic converging part than the first magnetic converging part. The magnetic sensor according to claim 9, further comprising a resistance element.
　前記第１磁気収束部の前記第２方向の側部に接続され、前記第１方向から見て、または平面視で、前記第３磁気抵抗素子側に突出した第３補助磁気収束部材と、
　前記第３磁気収束部の前記第２方向の側部に接続され、前記第１方向から見て、または平面視で、前記第４磁気抵抗素子側に突出した第４補助磁気収束部材と、
　を備える請求項１２に記載の磁気センサ。 A third auxiliary magnetic flux concentrator member connected to a side portion of the first magnetic flux concentrator in the second direction and protruding toward the third magnetoresistive element in a plan view as viewed from the first direction;
A fourth auxiliary magnetic flux concentrator member connected to a side portion of the third magnetic flux concentrator in the second direction and projecting toward the fourth magnetoresistive element in a plan view as viewed from the first direction;
A magnetic sensor according to claim 12.
　前記第１から第４磁気抵抗素子は、平面視で、前記第１磁気収束部に対して対称な配置に設けられる請求項１２または１３に記載の磁気センサ。 The magnetic sensor according to claim 12 or 13, wherein the first to fourth magnetoresistive elements are provided in a symmetrical arrangement with respect to the first magnetic converging part in plan view.
　前記第１から第４磁気抵抗素子は、略同一方向の感磁性を有する請求項１２から１４のいずれか一項に記載の磁気センサ。 15. The magnetic sensor according to claim 12, wherein the first to fourth magnetoresistive elements have magnetism in substantially the same direction.
　前記第２磁気収束部および前記第３磁気収束部は、平面視で、前記第１磁気収束部に対して対称な配置に設けられる請求項９から１５のいずれか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 9 to 15, wherein the second magnetic converging unit and the third magnetic converging unit are provided in a symmetrical arrangement with respect to the first magnetic converging unit in plan view.
　前記第１磁気収束部材は、前記第１方向から見て、または平面視で、前記第１端部から前記第３磁気抵抗素子側に突出した請求項９から１６のいずれか一項に記載の磁気センサ。 17. The first magnetic flux concentrating member according to claim 9, wherein the first magnetic flux concentrating member protrudes from the first end portion toward the third magnetoresistive element when viewed from the first direction or in plan view. Magnetic sensor.
　前記第１磁気収束部の前記第１端部とは反対側の端部に接続され、前記第１方向から見て、または平面視で、前記第１端部とは反対側の端部から前記第１磁気抵抗素子側に突出した第４磁気収束部材を備える請求項１から１７のいずれか一項に記載の磁気センサ。 The first magnetic flux concentrator is connected to an end opposite to the first end, and viewed from the first direction or in plan view, from an end opposite to the first end. The magnetic sensor as described in any one of Claim 1 to 17 provided with the 4th magnetic concentrating member protruded to the 1st magnetoresistive element side.
　前記第２磁気収束部の前記第１方向に延伸された端部に接続され、前記第１方向から見て、または平面視で、前記第１方向に延伸された端部から前記第１磁気抵抗素子側に突出した第５磁気収束部材を備える請求項１から１８のいずれか一項に記載の磁気センサ。 The first magnetic resistance is connected to an end portion of the second magnetic flux concentrating portion that extends in the first direction and viewed from the first direction or from an end portion that extends in the first direction in plan view. The magnetic sensor according to claim 1, further comprising a fifth magnetic flux concentrating member protruding toward the element side.
　前記第３磁気収束部の前記第１方向とは反対側の端部に接続され、前記第１方向から見て、または平面視で、前記第１方向とは反対側の端部から前記第３磁気抵抗素子側に突出した第６磁気収束部材を備える請求項９から１７のいずれか一項に記載の磁気センサ。 The third magnetic flux concentrator is connected to the end opposite to the first direction, and viewed from the first direction or in plan view, from the end opposite to the first direction, the third direction. The magnetic sensor as described in any one of Claim 9 to 17 provided with the 6th magnetic concentrating member protruded to the magnetoresistive element side.
　前記第１磁気収束部の前記第１端部とは反対側の端部に接続され、前記第１方向から見て、または平面視で、前記第１端部とは反対側の端部から前記第１磁気抵抗素子側および／または前記第３磁気抵抗素子側に突出した第４磁気収束部材を備える請求項２０に記載の磁気センサ。 The first magnetic flux concentrator is connected to an end opposite to the first end, and viewed from the first direction or in plan view, from an end opposite to the first end. The magnetic sensor according to claim 20, further comprising a fourth magnetic flux concentrating member protruding toward the first magnetoresistive element side and / or the third magnetoresistive element side.
　前記第２磁気収束部の前記第１方向に延伸された端部に接続され、前記第１方向から見て、または平面視で、前記第１方向に延伸された端部から前記第１磁気抵抗素子側に突出した第５磁気収束部材を備える請求項２０または２１に記載の磁気センサ。 The first magnetic resistance is connected to an end portion of the second magnetic flux concentrating portion that extends in the first direction and viewed from the first direction or from an end portion that extends in the first direction in plan view. The magnetic sensor according to claim 20, further comprising a fifth magnetic flux concentrating member protruding toward the element side.
　前記第１磁気収束部材は、平面視で、多角形の形状を有する請求項１から２２のいずれか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 22, wherein the first magnetic flux concentrating member has a polygonal shape in plan view.
　前記第１磁気収束部材は、平面視で、前記第１方向において前記第１磁気抵抗素子と重なる位置まで延伸する請求項１から２３のいずれか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 23, wherein the first magnetic flux concentrating member extends to a position overlapping with the first magnetoresistive element in the first direction in a plan view.
　前記第１から第４磁気抵抗素子のそれぞれの磁気抵抗の変化に基づき、入力された磁場の方向および大きさを算出する算出部を更に備える請求項１２から１５のいずれか一項に記載の磁気センサ。 The magnetism according to any one of claims 12 to 15, further comprising a calculator that calculates a direction and a magnitude of an input magnetic field based on a change in magnetoresistance of each of the first to fourth magnetoresistive elements. Sensor.
　第１方向に延伸する第１磁気収束部と、
　第１方向に延伸し、前記第１磁気収束部の第１端部側よりも前記第１方向に延伸する第２磁気収束部と、
　平面視で、前記第１磁気収束部および前記第２磁気収束部の間で前記第１方向に延伸する第１磁気抵抗素子と、
　前記第１磁気収束部の前記第１端部に接続され、前記第１磁気抵抗素子の前記第１方向側から前記第１磁気抵抗素子の端部へと入力される磁界を低減する第１磁気収束部材と、
　を備える磁気センサ。 A first magnetic converging portion extending in a first direction;
A second magnetic converging part that extends in the first direction and extends in the first direction from the first end side of the first magnetic converging part;
A first magnetoresistive element extending in the first direction between the first magnetic converging portion and the second magnetic converging portion in plan view;
A first magnet that is connected to the first end of the first magnetic converging unit and reduces a magnetic field input from the first direction side of the first magnetoresistive element to the end of the first magnetoresistive element. A converging member;
A magnetic sensor comprising:
　第１方向に延伸する第１磁気収束部と、
　前記第１方向に延伸し、前記第１磁気収束部の第１方向側の第１端部よりも前記第１方向に延伸する第２磁気収束部と、
　平面視で、前記第１磁気収束部および前記第２磁気収束部の間で前記第１方向に延伸する第１磁気抵抗素子と、
　平面視で、前記第１磁気収束部および前記第２磁気収束部の間で前記第１方向に延伸し、前記第１磁気収束部よりも前記第２磁気収束部に近い第２磁気抵抗素子と、
　前記第１磁気収束部の前記第１端部に接続され、前記第１方向から見て、または平面視で、前記第１端部から前記第１磁気抵抗素子側に突出した第１磁気収束部材と、
　前記第１磁気収束部の前記第１端部とは反対側の端部に接続され、前記第１方向から見て、または平面視で、前記第１端部とは反対側の端部から前記第１磁気抵抗素子側に突出した第４磁気収束部材と、
　前記第２磁気収束部の前記第１方向とは反対側の第２端部に接続され、前記第１方向から見て、または平面視で、前記第２端部から前記第１磁気抵抗素子側に突出した第２磁気収束部材と、
　前記第２磁気収束部の前記第１方向に延伸された端部に接続され、前記第１方向から見て、または平面視で、前記第１方向に延伸された端部から前記第１磁気抵抗素子側に突出した第５磁気収束部材と、
　前記第１磁気収束部の第１方向と垂直な第２方向の側部に接続され、前記第１方向から見て、または平面視で、前記第１磁気抵抗素子側に突出した第１補助磁気収束部材と、
　前記第２磁気収束部の前記第２方向の側部に接続され、前記第１方向から見て、または平面視で、前記第２磁気抵抗素子側に突出した第２補助磁気収束部材と、
　を備え、
　前記第１磁気収束部の前記第１方向とは反対側の端部は、前記第２磁気収束部の前記第２端部よりも前記第１方向とは反対方向に延伸する磁気センサ。 A first magnetic converging portion extending in a first direction;
A second magnetic flux concentrator extending in the first direction and extending in the first direction from a first end on the first direction side of the first magnetic flux concentrator,
A first magnetoresistive element extending in the first direction between the first magnetic converging portion and the second magnetic converging portion in plan view;
A second magnetoresistive element extending in the first direction between the first magnetic converging part and the second magnetic converging part in a plan view and closer to the second magnetic converging part than the first magnetic converging part; ,
A first magnetic flux concentrator member connected to the first end portion of the first magnetic flux concentrator and projecting from the first end portion toward the first magnetoresistive element when viewed from the first direction or in plan view. When,
The first magnetic flux concentrator is connected to an end opposite to the first end, and viewed from the first direction or in plan view, from an end opposite to the first end. A fourth magnetic flux concentrating member protruding toward the first magnetoresistive element;
Connected to the second end of the second magnetic flux concentrator opposite to the first direction, and viewed from the first direction or in plan view, from the second end to the first magnetoresistive element side A second magnetic flux concentrating member protruding into
The first magnetic resistance is connected to an end portion of the second magnetic flux concentrating portion that extends in the first direction and viewed from the first direction or from an end portion that extends in the first direction in plan view. A fifth magnetic flux concentrating member protruding toward the element side;
A first auxiliary magnet which is connected to a side portion in a second direction perpendicular to the first direction of the first magnetic converging portion and protrudes toward the first magnetoresistive element when viewed from the first direction or in plan view. A converging member;
A second auxiliary magnetic flux concentrator member connected to a side portion of the second magnetic flux concentrator in the second direction and protruding toward the second magnetoresistive element in a plan view when viewed from the first direction;
With
An end of the first magnetic flux concentrator opposite to the first direction extends in a direction opposite to the first direction than the second end of the second magnetic flux concentrator.