WO2015186661A1 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- WO2015186661A1 WO2015186661A1 PCT/JP2015/065770 JP2015065770W WO2015186661A1 WO 2015186661 A1 WO2015186661 A1 WO 2015186661A1 JP 2015065770 W JP2015065770 W JP 2015065770W WO 2015186661 A1 WO2015186661 A1 WO 2015186661A1
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02881—Means for compensation or elimination of undesirable effects of diffraction of wave beam
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Definitions
- the present invention relates to an acoustic wave device having a structure in which a low acoustic velocity film and a high acoustic velocity film are laminated on a piezoelectric film.
- Patent Document 1 discloses an acoustic wave device in which a high sound velocity film, a low sound velocity film, and a piezoelectric film are laminated in this order on a support substrate.
- the Q value can be increased.
- Patent Document 1 when manufacturing an acoustic wave device, a support substrate is bonded to a laminate in which a piezoelectric film, a low acoustic velocity film, and a high acoustic velocity film are laminated.
- this bonding various methods such as hydrophilic bonding, activation bonding, atomic diffusion bonding, and metal diffusion bonding can be used.
- An object of the present invention is to provide an elastic wave device that is unlikely to be deteriorated in characteristics due to warpage and is less likely to crack during transportation.
- the acoustic wave device includes a piezoelectric film, a low-velocity film laminated on the piezoelectric film, and having a sound velocity of a propagating bulk wave lower than that of a bulk wave propagating through the piezoelectric film, and the low-sonic velocity
- the film is laminated on the surface of the film opposite to the piezoelectric film, and the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric film, and the low sound velocity of the high sound velocity film.
- the bonding layer includes the interface between the high-sonic film and the low-sonic film, the low-sonic film, or the low-sonic film in the high-sonic film. It exists at any position on the interface with the piezoelectric film.
- the acoustic velocity of the bulk wave propagating through the piezoelectric film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric film.
- the sound velocity of the bulk acoustic wave propagating through the piezoelectric film is higher than the acoustic velocity of the acoustic wave propagating through the piezoelectric film.
- a high sound velocity substrate and a bonding layer located in the low sound velocity film or at an interface between the piezoelectric film and the low sound velocity film.
- the bonding layer includes the high-sonic substrate, the interface between the high-sonic substrate and the low-sonic film, the low-sonic film, or the low-sonic film. And at any position on the interface between the piezoelectric film and the piezoelectric film.
- the bonding layer includes a metal oxide layer or a metal nitride.
- the bonding layer includes a Ti layer, and the thickness of the Ti layer is not less than 0.4 nm and not more than 2.0 nm.
- the thickness of the Ti layer is 0.4 nm or more and 1.2 nm or less.
- the piezoelectric film is made of LiTaO 3 .
- the low sound velocity film is made of silicon oxide.
- the low sound velocity film is made of silicon oxide
- the bonding layer is present at a position in the low sound velocity film
- the low sound velocity film is the bonding material.
- a first low acoustic velocity film layer positioned on the piezoelectric film side of the layer and a second low acoustic velocity film layer positioned on the opposite side of the bonding layer from the piezoelectric film, and the elastic layer
- the film thickness of the first low acoustic velocity film layer is 0.12 ⁇ or more.
- the film thickness of the first low sound velocity film layer is 0.22 ⁇ or more.
- the high-sonic velocity film is made of aluminum nitride or silicon nitride.
- an intermediate layer is further provided between the high acoustic velocity film and the substrate.
- the bonding layer is either in the high sound speed film to the interface between the low sound speed film and the piezoelectric film, or in the low sound speed film or between the piezoelectric film and the low sound speed film. Since it is located at the interface, warpage due to the formation of the bonding layer hardly occurs. Therefore, it is difficult for electrical characteristics to deteriorate and cracks during transportation and the like hardly occur.
- FIG. 1A is a schematic front sectional view of an acoustic wave device according to the first embodiment of the present invention
- FIG. 1B is a schematic plan view showing an electrode structure thereof.
- FIG. 2 is a diagram showing the resonance characteristics of the elastic wave device of the example of the first embodiment of the present invention and the conventional example.
- FIG. 3 is a schematic front sectional view of an acoustic wave device according to a second embodiment of the present invention.
- FIG. 4 is a schematic front sectional view of an acoustic wave device according to a third embodiment of the present invention.
- FIG. 5 is a schematic front sectional view of an acoustic wave device according to a fourth embodiment of the present invention.
- FIG. 1A is a schematic front sectional view of an acoustic wave device according to the first embodiment of the present invention
- FIG. 1B is a schematic plan view showing an electrode structure thereof.
- FIG. 2 is a diagram showing the resonance characteristics of the elastic wave device of the example of the
- FIG. 6 is a schematic front sectional view of an acoustic wave device according to a fifth embodiment of the present invention.
- FIG. 7 is a schematic front sectional view of an acoustic wave device according to a sixth embodiment of the present invention.
- FIG. 8 is a diagram showing the relationship between the film thickness of the SiO 2 film and the Q value.
- FIG. 9 is a diagram showing the relationship between the film thickness of the Ti layer of the bonding layer and the Q value.
- FIG. 1A is a schematic front sectional view of an acoustic wave device according to a first embodiment of the present invention.
- the elastic wave device 1 has a support substrate 2.
- a first silicon oxide film 3 is laminated on the support substrate 2.
- a high acoustic velocity film 4 is laminated on the first silicon oxide film 3.
- a second silicon oxide film is laminated on the high acoustic velocity film 4 as the low acoustic velocity film 5.
- the low acoustic velocity film 5 has a structure in which a low acoustic velocity film layer 5 a and a low acoustic velocity film layer 5 b are joined by a joining layer 7.
- a piezoelectric film 6 is laminated on the low acoustic velocity film 5.
- the low sound velocity film 5 means a film whose propagating bulk wave velocity is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric film 6.
- the high sound velocity film 4 means a film in which the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric film 6.
- the elastic wave propagating through the piezoelectric film 6 is a specific mode used to obtain characteristics as a filter or a resonator.
- the elastic wave is shown.
- the support substrate 2 can be made of an appropriate material as long as the structure above the support substrate 2 can be maintained. Such materials include sapphire, LiTaO 3 , LiNbO 3 , piezoelectric materials such as quartz, various ceramics such as alumina, magnesia, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, steatite, forsterite. Alternatively, a dielectric such as glass, a semiconductor such as silicon or gallium nitride, or a resin can be given. In the present embodiment, the support substrate 2 is made of Si.
- the first silicon oxide film 3 may not be provided. That is, the high acoustic velocity film 4 may be laminated directly on the support substrate 2. However, as in the present embodiment, the high acoustic velocity film 4 may be laminated on the support substrate 2 indirectly, that is, via the first silicon oxide film 3.
- the high sound velocity film 4 functions so that the elastic wave is confined in the portion where the piezoelectric film 6 and the low sound velocity film 5 are laminated, and does not leak into the structure below the high sound velocity film 4.
- the high acoustic velocity film 4 is made of aluminum nitride.
- materials such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon oxynitride, DLC film, or diamond can be used as long as the elastic wave can be confined.
- various composite materials such as a medium mainly composed of the above materials and a medium mainly composed of a mixture of the above materials may be used.
- the high acoustic velocity film 4 is thicker, more than 0.5 times the wavelength ⁇ of the surface acoustic wave, It is desirable that it is 1.5 times or more.
- an appropriate dielectric material having a bulk acoustic velocity lower than the bulk wave propagating through the piezoelectric membrane 6 can be used.
- silicon oxide, glass, silicon oxynitride, tantalum oxide, a compound obtained by adding fluorine, carbon, or boron to silicon oxide, or a medium containing the above material as a main component can be used.
- the bonding layer 7 is a portion formed by metal diffusion bonding, as will be apparent from the manufacturing method described later, and is made of a Ti oxide in this embodiment.
- the bonding layer 7 may be formed of a metal such as Ti or Al instead of the metal oxide.
- metal oxide or metal nitride is preferable because it can achieve electrical insulation. In particular, since the bonding strength is high, an oxide or nitride of Ti is desirable.
- the piezoelectric film 6 is made of LiTaO 3 .
- the piezoelectric film 6 may be made of a piezoelectric single crystal other than LiTaO 3 .
- the IDT electrode 8 is made of Al in this embodiment.
- the IDT electrode 8 can be formed of an appropriate metal material such as Al, Cu, Pt, Au, Ag, Ti, Ni, Cr, Mo, W, or an alloy mainly composed of any of these metals.
- the IDT electrode 8 may have a structure in which a plurality of metal films made of these metals or alloys are laminated.
- the electrode structure shown in FIG. 1B is formed on the piezoelectric film 6. That is, the IDT electrode 8 and the reflectors 9 and 10 disposed on both sides of the IDT electrode 8 in the elastic wave propagation direction are formed. Thereby, a 1-port elastic wave resonator is configured.
- the electrode structure including the IDT electrode in the present invention is not particularly limited.
- the electrode structure can be modified to constitute an appropriate resonator, a ladder filter combining the resonators, a longitudinally coupled resonator type filter, a lattice type filter, or a transversal type filter.
- the low acoustic velocity film 5 is laminated on the high acoustic velocity film 4 and the piezoelectric film 6 is laminated on the low acoustic velocity membrane 5.
- the Q value can be increased.
- since the bonding layer 7 formed by metal diffusion is located in the low acoustic velocity film 5, it is difficult to cause warpage at the mother wafer stage during manufacturing. Therefore, warping of the piezoelectric film 6 and the like is unlikely to occur in the finally obtained acoustic wave device 1. Therefore, it is difficult for the characteristics to deteriorate.
- cracks in the piezoelectric film 6 and the support substrate 2 are less likely to occur during the wafer transfer process during manufacture, product transfer, and the like. This will be described more specifically by explaining the following manufacturing method.
- the first silicon oxide film 3 and the high acoustic velocity film 4 are laminated on a mother support substrate. Thereafter, in order to form the low acoustic velocity film 5 on the high acoustic velocity film 4, a second silicon oxide film is laminated to obtain a first laminated body. Separately, a second laminate is prepared in which an IDT electrode is formed on one surface of a piezoelectric film and a silicon oxide film is formed on the opposite surface.
- the Ti layers are laminated on the silicon oxide film surface of the first laminate and the silicon oxide film surface of the second laminate, respectively.
- the Ti layers of the first and second laminates are brought into contact with each other and bonded under heating.
- Ti on both sides that are joined diffuses to each other.
- the bonding layer 7 is formed by metal diffusion bonding.
- oxygen is supplied to the Ti layer from the silicon oxide film side. Therefore, the bonding layer 7 is made of Ti oxide. Therefore, sufficient electrical insulation is achieved and the first and second laminates are firmly joined.
- the mother laminate obtained in this way is cut into individual elastic wave devices. Thereby, the elastic wave device 1 can be obtained.
- the bonding layer 7 is located in the low acoustic velocity film 5, it is difficult for warpage to occur when the mother laminate is obtained.
- the inventors of the present application have found that when the acoustic wave device described in Patent Document 1 is bonded using metal diffusion bonding, the piezoelectric film is warped in the mother laminate.
- ripples may appear in electrical characteristics such as resonance characteristics.
- the warp can be eliminated after the joining by press molding under heating.
- the deterioration of the electrical characteristics was not recovered. Therefore, it is considered that micro cracks or the like are generated in the piezoelectric thin film due to warpage.
- the inventors of the present application have selected the configuration of the first and second laminated bodies so that the bonding layer 7 is provided in the low sound velocity film 5 as in the present embodiment. It has been found that the warpage can be effectively suppressed.
- Patent Document 1 a laminated structure composed of a piezoelectric film, a low acoustic velocity film, and a high acoustic velocity film and a laminated structure composed of a medium layer and a support substrate are bonded. Therefore, a large film stress is applied to the piezoelectric film before bonding. Accordingly, a relatively large warp tends to occur in the piezoelectric film at the mother laminate stage.
- the silicon oxide film is only laminated on the piezoelectric film, no large film stress is applied to the piezoelectric film. For this reason, even in the laminated body obtained by bonding, the stress applied to the piezoelectric film 6 is small, so that the warpage hardly occurs. Therefore, it is difficult for the electrical characteristics to deteriorate as described above. Moreover, it is hard to produce a crack. This point will be described based on a specific experimental example.
- the 1-port type acoustic wave resonator was manufactured as the acoustic wave device 1.
- the number of electrode fingers of the IDT electrode was 100 pairs, the cross width of the electrode fingers was 20 ⁇ , and the wavelength determined by the electrode finger pitch was 2.0 ⁇ m.
- the number of electrode fingers was 20.
- the IDT electrode 8 and the reflectors 9 and 10 are made of a metal made of Al and have a thickness of 160 nm.
- FIG. 2 shows the resonance characteristics of the example of the above embodiment with a solid line.
- an acoustic wave device was manufactured in the same manner as in the example of the above embodiment except that the bonding layer 7 was provided in the first silicon oxide film 3.
- the resonance characteristics of this conventional acoustic wave device are shown by broken lines in FIG.
- ripple appears between the resonance point and the anti-resonance point.
- the waveform at the resonance point is sharper according to the embodiment than in the conventional example, and the ratio of the valley of the impedance characteristic is also increased.
- the reason why the resonance characteristics of the example are enhanced as compared with the resonance characteristics of the conventional example is considered to be because the above-described micro-crack based on the warp does not occur.
- FIG. 3 is a schematic front sectional view of an acoustic wave device according to a second embodiment of the present invention.
- the first silicon oxide film 3, the high acoustic velocity film 4, the low acoustic velocity film 5, the piezoelectric film 6, and the IDT electrode 8 are laminated on the support substrate 2.
- the bonding layer 7 exists in the high acoustic velocity film 4. That is, the high sound velocity film 4 has high sound velocity film layers 4a and 4b, and the bonding layer 7 is formed between the high sound velocity film layer 4a and the high sound velocity film layer 4b.
- a second laminated body in which a low sound velocity film and a high sound velocity film layer are provided on the piezoelectric film may be prepared during the production. Therefore, warpage hardly occurs in the piezoelectric film. Therefore, as in the first embodiment, the electrical characteristics hardly deteriorate in the acoustic wave device 21 as well. In addition, the piezoelectric film is hardly cracked in the wafer stage or the finally obtained elastic wave device 21.
- FIG. 4 is a schematic front sectional view of an acoustic wave device according to a third embodiment of the present invention.
- the first silicon oxide film 3, the high acoustic velocity film 4, the second silicon oxide film 5B, the bonding layer 7, and the third silicon oxide film 5A are formed on the support substrate 2.
- the piezoelectric film 6 and the IDT electrode 8 are laminated in this order.
- both the second silicon oxide film 5B and the third silicon oxide film 5A are low-speed films.
- the bonding layer 7 is located at the interface between the second silicon oxide film 5B as the low sound velocity film and the third silicon oxide film 5A.
- the second laminated body may be prepared on the piezoelectric film at the time of manufacturing. Therefore, warpage hardly occurs in the piezoelectric film. Accordingly, the electrical characteristics of the acoustic wave device 31 are hardly deteriorated. In addition, the piezoelectric film is hardly cracked in the wafer stage or the finally obtained elastic wave device 31.
- FIG. 5 is a schematic front sectional view of an acoustic wave device according to a fourth embodiment of the present invention.
- the first silicon oxide film 3, the high acoustic velocity film 4, the low acoustic velocity film 5, the piezoelectric film 6, and the IDT electrode 8 are laminated on the support substrate 2.
- the bonding layer 7 is located at the interface between the low acoustic velocity film 5 and the piezoelectric film 6.
- a second laminated body made of a piezoelectric film may be prepared during manufacturing. Therefore, warpage hardly occurs in the piezoelectric film. Accordingly, the electrical characteristics of the acoustic wave device 41 are not easily deteriorated. Further, the piezoelectric film is not easily cracked in the wafer stage or the finally obtained elastic wave device 41.
- the bonding layer 7 may be provided at any position from the high sound velocity film 4 to the interface between the low sound velocity film 5 and the piezoelectric film 6. .
- FIG. 6 is a schematic front sectional view of an acoustic wave device according to a fifth embodiment of the present invention.
- a low acoustic velocity film 55 is laminated on a high acoustic velocity substrate 52.
- a piezoelectric film 56 is laminated on the low acoustic velocity film 55.
- An IDT electrode 58 is formed on the piezoelectric film 56.
- reflectors are provided on both sides of the IDT electrode 58 in the elastic wave propagation direction, thereby forming a one-port type elastic wave resonator.
- the high sonic substrate 52 is used, and the high sonic film is not separately provided. Since the low acoustic velocity film 55 and the high acoustic velocity substrate 52 are laminated below the piezoelectric film 56, the Q value can be increased also in this embodiment. As described above, the high sound velocity substrate 52 and the support substrate may be used together.
- the high sound velocity substrate 52 is made of an appropriate material in which the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric film 56.
- the high sonic substrate 52 is made of Si.
- the high sound velocity substrate 52 can be formed of an appropriate material that satisfies the above conditions.
- the bonding layer 7 is located in the low acoustic velocity film 55 made of silicon oxide. That is, the bonding layer 7 is provided at the interface between the first low sound velocity film layer 55a and the second low sound velocity film layer 55b. Therefore, at the time of manufacture, a second laminated body obtained by laminating the IDT electrode 58 and the first low acoustic velocity film layer 55a on the piezoelectric film 56 may be prepared. Therefore, it is difficult for a large film stress to be applied to the piezoelectric film 56 in the second stacked body. Therefore, warpage hardly occurs in the piezoelectric film.
- a metal such as Ti or Al is formed on the exposed surface of the low-velocity film layer of the second laminate.
- a first laminated body is prepared in which a low acoustic velocity film layer is laminated on a mother high acoustic velocity substrate.
- a metal layer such as Ti is formed on the low acoustic velocity film layer of the first laminate.
- the first and second laminated bodies are joined under heating while bringing the metal layers into contact with each other. In this manner, the bonding layer 7 can be formed in the same manner as the elastic wave device 1 of the first embodiment.
- the mother laminate obtained is cut to obtain individual elastic wave devices 51.
- the bonding layer 7 is provided at the above-described position, warping is unlikely to occur at the mother piezoelectric film stage during manufacture. Therefore, electrical characteristics are unlikely to deteriorate. In addition, cracks and microcracks are unlikely to occur in the piezoelectric film 56 at the mother laminate stage and during product transportation.
- FIG. 7 is a schematic front sectional view of an acoustic wave device according to a sixth embodiment of the present invention.
- the bonding layer 7 is located at the interface between the piezoelectric film 56 and the low acoustic velocity film 55. Otherwise, the elastic wave device 61 is the same as the elastic wave device 51.
- the bonding layer 7 is located at a position close to the piezoelectric film 56 side. Therefore, the piezoelectric film 56 is unlikely to warp in the second laminated body stage before bonding. Therefore, as in the case of the elastic wave device 51 of the fifth embodiment, it is difficult for electrical characteristics to deteriorate. In addition, since the piezoelectric film 56 is unlikely to be warped in the manufacturing process, cracks and microcracks are hardly generated. In addition, since the piezoelectric film 56 is unlikely to warp during product transportation or the like, cracks and microcracks are unlikely to occur.
- the bonding layer 7 may be positioned either in the low sound velocity film 55 or in the interface between the piezoelectric film 56 and the low sound velocity film 55.
- various elastic wave devices were produced by changing the film thickness of the first low-sonic film layer 55a. More specifically, a high sonic substrate 52 made of Si was used. As the second low acoustic velocity film layer 55b, a SiO 2 film having a thickness of 55 nm was used. A Ti film was used as the bonding layer 7 and the thickness was 0.5 nm. A 600 nm LiTaO 3 film was used as the piezoelectric film 56. The wavelength ⁇ determined by the electrode finger pitch in the ITD electrode was 2 ⁇ m. A first low sound speed film layer 55a in contact with the piezoelectric film 56, is formed by SiO 2 as silicon oxide, with different thickness.
- FIG. 8 shows the relationship between the film thickness of the SiO 2 film as the low acoustic velocity film layer 55a and the Q value.
- the Q value increases as the film thickness of the SiO 2 film as the low acoustic velocity film layer 55a increases.
- the thickness of the SiO 2 film is 240 nm or more, that is, 0.12 ⁇ or more
- a high Q value exceeding 1000 is obtained.
- the film thickness of the SiO 2 film is 440 nm or more, that is, 0.22 ⁇ or more
- the variation of the Q value becomes small and is almost constant. Therefore, it can be seen that the Q value can be further increased and the variation can be reduced by setting the thickness of the SiO 2 film to 0.22 ⁇ or more.
- the film thickness of the SiO 2 film is preferably 0.12 ⁇ or more. More preferably, the thickness of the SiO 2 film is 0.22 ⁇ or more.
- the film thickness of the SiO 2 film as the low acoustic velocity film layer 55a is preferably 2 ⁇ or less. Thereby, the film stress can be reduced.
- the elastic wave device 31 of the third embodiment shown in FIG. 4 was produced by varying the thickness of the Ti layer of the bonding layer 7. More specifically, the high sound velocity film 5 is formed of Si.
- the bonding layer 7 was formed of a Ti layer and a Ti oxide layer. The bonding layer 7 was formed so that the Ti oxide layer was located on the high sound velocity film 4 side and the Ti layer was located on the low sound velocity film 5 side.
- the thickness of the Ti oxide layer was 50 nm.
- the low acoustic velocity film was formed of SiO 2 and had a thickness of 700 nm.
- the piezoelectric film 6 is made of LiTaO 3 and has a thickness of 600 nm.
- the wavelength ⁇ of the surface acoustic wave as the elastic wave used by the elastic wave device 31 was 2 ⁇ m.
- FIG. 9 is a diagram showing the relationship between the film thickness of the Ti layer as the bonding layer and the Q value.
- the Q value increases as the thickness of the Ti layer of the bonding layer decreases.
- the thickness of the Ti layer is 2.0 nm or less, that is, 1 ⁇ 10 ⁇ 3 ⁇ or less
- a high Q value exceeding 1000 is obtained.
- the thickness of the Ti layer is 1.2 nm or less, that is, 0.6 ⁇ 10 ⁇ 3 ⁇ or less
- the variation of the Q value is small and almost constant. Therefore, it can be seen that the Q value can be further increased and the variation can be reduced by setting the thickness of the Ti layer of the bonding layer to 1.2 nm or less, or 0.6 ⁇ 10 ⁇ 3 ⁇ or less.
- the thickness of the Ti layer is 2.0 nm or less, and more preferably, the thickness of the Ti layer is 1.2 nm or less.
- the thickness of the Ti layer is preferably 0.4 nm or more.
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Abstract
Description
2…支持基板
3…第1の酸化ケイ素膜
4…高音速膜
4a,4b…高音速膜層
5…低音速膜
5a,5b…低音速膜層
6…圧電膜
7…接合層
8…IDT電極
9,10…反射器
21,31,41,51,61…弾性波装置
52…高音速基板
55…低音速膜
55a,55b…低音速膜層
56…圧電膜
58…IDT電極
Claims (13)
- 圧電膜と、
前記圧電膜に積層されており、伝搬するバルク波の音速が前記圧電膜を伝搬するバルク波の音速よりも低い低音速膜と、
前記低音速膜の前記圧電膜とは反対側の面に積層されており、伝搬するバルク波の音速が、前記圧電膜を伝搬する弾性波の音速よりも高い高音速膜と、
前記高音速膜の前記低音速膜とは反対側の面に直接または間接に積層された基板と、
前記高音速膜中から、前記低音速膜と前記圧電膜との界面までのいずれかの位置に設けられている接合層とを備える、弾性波装置。 - 前記接合層は、前記高音速膜中、前記高音速膜と前記低音速膜との界面、前記低音速膜中、または前記低音速膜と前記圧電膜との界面のいずれかの位置に存在する、請求項1に記載の弾性波装置。
- 圧電膜と、前記圧電膜に積層されており、伝搬するバルク波の音速が、前記圧電膜を伝搬するバルク波の音速よりも低い低音速膜と、
前記低音速膜の前記圧電膜とは反対側の面に直接または間接に積層されており、伝搬するバルク波の音速が、前記圧電膜を伝搬する弾性波の音速よりも高い高音速基板と、
前記低音速膜中、または前記圧電膜と前記低音速膜との界面に位置している接合層とを備える、弾性波装置。 - 前記接合層は、前記高音速基板中、前記高音基板と前記低音速膜との界面、前記低音速膜中、または前記低音速膜と前記圧電膜との界面のいずれかの位置に存在する、請求項3に記載の弾性波装置。
- 前記接合層が、金属酸化物層または金属窒化物層を含む、請求項1~4のいずれか1項に記載の弾性波装置。
- 前記接合層がTi層を含み、前記Ti層の膜厚が0.4nm以上であり、かつ2.0nm以下である、請求項1~5のいずれか1項に記載の弾性波装置。
- 前記Ti層の膜厚が0.4nm以上であり、かつ1.2nm以下である、請求項6項に記載の弾性波装置。
- 前記圧電膜が、LiTaO3からなる、請求項1~7のいずれか1項に記載の弾性波装置。
- 前記低音速膜が酸化ケイ素からなる、請求項1~8のいずれか1項に記載の弾性波装置。
- 前記低音速膜が酸化ケイ素からなり、
前記接合層は、前記低音速膜中の位置に存在し、前記低音速膜が、前記接合層の前記圧電膜側に位置している第1の低音速膜層と、前記接合層の前記圧電膜とは反対側に位置している第2の低音速膜層とを有し、前記弾性波装置が利用する弾性波の波長をλとしたときに、前記第1の低音速膜層の膜厚が0.12λ以上である、請求項2又は4に記載の弾性波装置。 - 前記第1の低音速膜層の膜厚が0.22λ以上である、請求項10項に記載の弾性波装置。
- 前記高音速膜が、窒化アルミニウムまたは窒化ケイ素からなる、請求項1~11のいずれか1項に記載の弾性波装置。
- 前記高音速膜と前記基板との間に積層された中間層をさらに備える、請求項1~12のいずれか1項に記載の弾性波装置。
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