WO2015176626A1 - Led large chip and optical machine module group - Google Patents

Led large chip and optical machine module group Download PDF

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Publication number
WO2015176626A1
WO2015176626A1 PCT/CN2015/079152 CN2015079152W WO2015176626A1 WO 2015176626 A1 WO2015176626 A1 WO 2015176626A1 CN 2015079152 W CN2015079152 W CN 2015079152W WO 2015176626 A1 WO2015176626 A1 WO 2015176626A1
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WIPO (PCT)
Prior art keywords
led
chip
transparent
circuit
silver paste
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PCT/CN2015/079152
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French (fr)
Chinese (zh)
Inventor
张继强
张哲源
朱晓冬
Original Assignee
贵州光浦森光电有限公司
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Priority claimed from CN201410213295.0A external-priority patent/CN103968286B/en
Priority claimed from CN201410211945.8A external-priority patent/CN103957649B/en
Priority claimed from CN201410214077.9A external-priority patent/CN103985809B/en
Priority claimed from CN201410213282.3A external-priority patent/CN103953901B/en
Priority claimed from CN201410213349.3A external-priority patent/CN103968287B/en
Priority claimed from CN201410213615.2A external-priority patent/CN103968342B/en
Priority claimed from CN201410214074.5A external-priority patent/CN103953902B/en
Application filed by 贵州光浦森光电有限公司 filed Critical 贵州光浦森光电有限公司
Publication of WO2015176626A1 publication Critical patent/WO2015176626A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H05B47/17—Operational modes, e.g. switching from manual to automatic mode or prohibiting specific operations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices

Definitions

  • the current LED driver power supply is mostly a switching power supply, which is too large; there is also a slightly smaller linear power supply, but its driver chip is mostly in DIP dual in-line or SMD chip package type and auxiliary components, and its volume is still insufficient. Small enough to fit inside the optomechanical module.
  • the transition circuit integrated transparent block is used to connect an external power source or signal to more than one LED driving power large chip, and then output the large chip to the LED lighting large chip through the LED driving power. It solves the circuit requirements of the LED light machine module, so that the external power supply or signal should be connected to the LED drive power large chip or the LED drive power large chip output to the LED lighting large chip circuit needs to be involved on the optical machine template on both sides
  • the printed circuit can be realized.
  • the back of the optomechanical template will be used close to the heat sink, and the heat sink is mostly made of metal.
  • the back of the optomechanical template needs to be insulated, and the problem of the double-sided printed circuit cannot be realized.
  • the arrangement method of the large chip on the non-insulating heat-conducting substrate is characterized in that: the non-insulating heat-conducting substrate is included, the E-type transparent transition circuit is integrated with the transparent block, and one side of the silver paste circuit is closely attached to the non-insulating heat-conducting substrate; the LED driving power source is One side of the large chip with the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block with the silver paste circuit for conducting butt welding; the side of the LED illumination large chip facing the silver paste circuit closely fits the non-insulated thermal conductive substrate arrangement, The interface wire end is aligned with the E-type transparent transition circuit integrated transparent block output end interface wire end; the LED illumination large chip with the chip side is further provided with an F-type transparent transition circuit integrated transparent block; the F-type transparent transition circuit One end of the integrated transparent block with the silver paste circuit surface and the side of the LED illumination large chip with the silver paste circuit are butt welded according to the interface wire, and the other end is integrated with the E-type transparent transition circuit
  • the segment in which the LED load is connected in series is controlled by a switch, and the control node of the switch is a segmentation limit of the voltage, the number of segments of the voltage and the LED
  • the number of segments in the load series corresponds.
  • the LED load can be divided into 3 to 7 segments, with few segments and simple circuit, but the current varies greatly, and it is easy to generate low-order harmonics in the power grid; if there are many segments, the circuit structure is complicated. Generally, 4 to 6 segments are preferred.
  • the power source driving wafer level chip, the rectifier bridge wafer level chip and the LED chip are filled with a transparent sealant for leveling, and then, in addition to the reserved installation and soldering position, Type and size of the same transparent cover plate with the templating template to form a seal thereon; or directly drive the wafer level chip, the rectifier bridge wafer level chip and the LED chip to form a layer to drive the wafer level chip, Rectifier bridge wafer level chip and LED chip sealed transparent sealant.
  • the LED lighting large chip of the invention can be conveniently used for LED light machine modules with different power requirements, and can be driven by a large power chip, and the LED lighting large chip is designed to have a fixed width W.
  • the length is determined according to the specifications of the manufacturing equipment, and is divided into different lengths when used. In this way, the LED lighting large chip does not need to be cut into a millimeter size for a single LED chip, and the mechanical characteristics of the substrate are reduced when the chip is fabricated, so that the selection range of the polycrystalline high-purity alumina and the like enters the substrate is greatly increased.
  • FIG. 2 is an external view of a LED lighting large chip of the present invention
  • FIG. 10 is a schematic circuit diagram of a small optical machine template of the present invention.
  • FIG. 13 is a schematic view of a medium-sized optical machine module with a horizontal arrangement of a large chip according to the present invention
  • FIG. 24 is a schematic structural view of a C-type transition circuit integrated transparent block of the present invention.
  • 26 is a schematic view showing a layout method of a large chip on a non-insulating heat-conductive substrate
  • FIG. 29 is a schematic structural view of a bulb with a heat conducting bracket as a substrate using the method shown in FIG. 26 according to the present invention.
  • Figure 30 is a schematic view showing the structure of a small-sized optical machine module using the method shown in Figure 26;
  • 38 is a circuit diagram of an internal circuit of a driving power supply chip according to an embodiment of the present invention.
  • FIG. 40 is a power loading distribution diagram of an LED chip array module in a DC52V series according to an embodiment of the present invention.
  • the LED illumination chip as shown in FIG. 1 to FIG. 3, includes a first transparent substrate 421 having a width W, and the first transparent substrate 421 is provided with N+1 parallel interface wires, and the first transparent substrate 421 is disposed.
  • LED driving power large chip comprising a second transparent substrate 413 having a width fixed by W, the second transparent substrate 413 is printed with a silver paste circuit, an interface wire is formed on the silver paste circuit, and the interface wire has an access end and an output end;
  • the width of the inlet end is the same as the width W G of the wire access end of the optomechanical template 43 or has a pad connected to the electrical connector;
  • the silver paste circuit at the output end has N+1 parallel interface wires, and the adjacent two interface wires
  • the second transparent substrate 413 is pasted with an unpackaged power source to drive the wafer level chip 411 and the rectifier bridge
  • the wafer level chip 412 then solders the unpackaged power source driving wafer level chip 411 and the rectifier bridge wafer level chip 412 on the second transparent substrate 413;
  • the rectifier bridge wafer level chip 412 can
  • a resistor 416 can be disposed on the back of the LED driving power large chip 410 to facilitate adjustment of the internal reference voltage, see FIG.
  • the side of the LED illumination chip 420 with the chip is attached to the side of the optomechanical template 43 with the silver paste circuit 414 for butt welding, and the interface wires of the two are soldered correspondingly; at the same time, the LED drive power chip 410 with the silver paste circuit One side is attached to the side of the optomechanical template 43 with the silver paste circuit 414 for butt welding; thereby, the LED illumination large chip 420 is connected to the LED driving power large chip 410; finally, the transparent LED is used to package the LED illumination large chip and the driving power supply around the large chip.
  • the LED chip carrying voltage is ⁇ DC3.2V or greater than DC10V High voltage.
  • the large-chip horizontally arranged LED light machine module comprises a transparent light machine template 43 printed with a silver paste circuit 414.
  • the silver paste circuit 414 forms an interface wire on the light machine template 43, the width and spacing of the interface wires and the LED
  • the width W and the width W JG of the large LED chip 420 and the LED driving power chip 410 are the same; for a large power module, or a transition circuit integrated transparent block 430, the optical template 43 and one are required.
  • the above LED driving power large chip 410 is connected; then the LED driving power large chip 410 and the LED lighting large chip 420 with a silver paste circuit 414 on one side of the transparent optical template 43 with the silver paste circuit 414 are soldered to the LED by the interface wire.
  • Light machine module is connected to then the LED driving power large chip 410 and the LED lighting large chip 420 with a silver paste circuit 414 on one side of the transparent optical template 43 with the silver paste circuit 414 are soldered to the LED by the interface wire.
  • Block 450 connects one or more LED lighting large chips 420 perpendicular to the optical template 43 to the optical template 43; and then the LED driving power large chip 410 with the silver paste circuit side and the transparent optical template 43 with the silver paste circuit One side is welded to the product by the interface wire.
  • the external power source or signal is directly connected through the connector 11 from the LED driving power large chip 410 soldered on the optomechanical template 43; As shown in FIG. 21 and FIG. 22, the optical template 43 is also soldered with a flexible circuit 44. The external power supply or signal is connected to the flexible circuit 44 through the connector 11 for soldering to the optical template 43.
  • the transparent block 460 is sealed with a transparent glue 45 to obtain an LED light machine module.
  • the F-type transparent transition circuit integrates one end of the transparent block 480 with the silver paste circuit surface and the side of the LED illumination large chip 420 with the silver paste circuit is butt welded according to the interface wire, and the other end is further transparent with the E-type transition
  • the side of the circuit integrated transparent block 470 with the silver paste circuit is butt welded to the product by the interface wire.
  • the non-insulating heat-conducting substrate is made of a metal or non-metal heat-conducting material, and the surface of the LED-illuminated large chip 420 is a mirror surface; the non-insulating heat-conducting substrate may be of a type of the light machine template 43; or the type of the heat-conducting bracket 3 of the light bulb, As shown in FIG. 29, it is a schematic diagram of the structure of the bulb in which the large chip is directly arranged on the heat conducting bracket according to the method of the present invention; or other heat sink-like type, as shown in FIG. 49; for the medium and small LED light machine template 43
  • the external power supply or signal is directly connected to the LED driving power large chip 410 attached to the optical template 43 through the connector 11 as shown in FIG.
  • the transition circuit integrated transparent block of the present invention comprises two kinds of transition circuit integrated transparent blocks: Type 1E: external power source and signal are respectively connected to the LED driving power large chip 410, as shown in FIG. 26 and FIG. 32, wherein the flexible circuit 44 is connected.
  • 2F type LED driving power large chip 410 output to LED lighting large chip 420, see Fig. 33, wherein LED driving power large chip 410 wire output width is W, wire spacing is W JG , height is H8; typical size is: width 12.4 mm, height: H8 is determined by the power of the LED illumination large chip 420.
  • the power of the sinusoidal pattern formed by the pulsating DC half-wave is 1 (Fig. 41); 3 is set to 120% of the load-carrying power of the LED load series segment.
  • a rectangular shadow map with an area of 1.2, the ordinate value of the rectangular shadow is the total maximum carrying voltage value of the series segment group; 4
  • the graphic area of the chipset can be obtained by drawing (See Figure 42), verify that the sum of the area of the chipset is greater than the pulsating DC sine wave area under the control node of the switch; 5 select the load voltage value of the chipset on the serial segment group by commodity, add up to or greater than the serial
  • the total maximum carrying voltage value of the segment group may be; wherein the LED chip set with a higher carrying voltage value is close to the positive terminal (the initial segment), and the LED chip group with a lower carrying voltage value is close to the negative terminal (the last segment).
  • Section 4 When V W is less than or equal to 4V WR /6, the switches K4 to K6 are turned ON (ON), the current is mainly formed by the node J4 through the switch K4, and the load is composed of LEDs with a rated voltage of 4V WR /6 in series;
  • the load voltage of the chip array is adjusted to DC244V; as shown in Fig. 43, the obtained chip array is loaded with a power area of 96.67% of the pulsating DC half-wave power area, and the power of the chip array is close to 1 is ideal; at this time, the power of the LED chip array is the chip array rating.
  • the output is 77.6%; the experimental verification is similar to the estimated value.
  • the optimization method is referred to above.

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  • General Engineering & Computer Science (AREA)
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Abstract

An LED lighting large chip, an LED driving power supply large chip and multiple types of optical machine module groups are disclosed in the present invention. The present invention makes it easier to standardize LED lighting, and is beneficial to standardization of LED lighting and large-scale extension in structure.

Description

LED大芯片及光机模组LED chip and optomechanical module 技术领域Technical field
本发明涉及一种LED照明大芯片、LED驱动电源大芯片及光机模组，属于LED照明技术领域。The invention relates to a LED lighting large chip, an LED driving power large chip and a light machine module, and belongs to the technical field of LED lighting.
背景技术Background technique
申请号201310140124.5、201310140138.7、201310140150.8、201310140105.2、201310140134.9、201310140106.7、201310140151.2、201310140136.8等中国专利申请公开了多个能在通用和互换的LED灯泡上使用的光机模组技术方案。这些技术为建立以LED灯泡为中心的照明产业架构，使LED灯泡(照明光源)、灯具、照明控制成为独立生产、应用的终端产品的基本理念奠定了基础。但上述专利尚未解决光机模组内置驱动电源的问题。Chinese Patent Application No. 201310140124.5, 201310140138.7, 201310140150.8, 201310140105.2, 201310140134.9, 201310140106.7, 201310140151.2, 201310140136.8, etc. disclose a plurality of optical module technical solutions that can be used on general-purpose and interchangeable LED bulbs. These technologies have laid the foundation for the establishment of LED lighting-centered lighting industry architecture, which has made LED bulbs (lighting sources), lamps and lighting control the basic concept of independent production and application of end products. However, the above patent has not solved the problem of the built-in driving power of the optomechanical module.
现行的LED驱动电源多为开关电源，体积太大；也有体积稍小的线性电源，但其驱动芯片多以DIP双列直插或SMD贴片封装型式再配合辅助元器件，其体积仍不足以小到能放置到光机模组内部。The current LED driver power supply is mostly a switching power supply, which is too large; there is also a slightly smaller linear power supply, but its driver chip is mostly in DIP dual in-line or SMD chip package type and auxiliary components, and its volume is still insufficient. Small enough to fit inside the optomechanical module.
LED照明从芯片厂提供LED芯片开始到照明灯需要经一系列的诸如贴片、固晶、焊接、封装、分光分色、驱动设计、散热设计、灯具设计等复杂而冗长的生产设计过程，由于存在芯片布置设计、导热设计和电源驱动设计等诸多不确定性，这种以LED芯片为中心的产业架构难以在可更换光源的模式下实现光源(灯泡)标准化，最终导致终端市场上的LED灯多以不可更换光源的整体结构灯为主体，增加了照明产品的产业复杂度和降低了照明产品的产业集中度。LED lighting from the chip factory to provide LED chips to the lighting needs a series of complex and lengthy production design processes such as patching, die bonding, soldering, packaging, spectral separation, drive design, thermal design, luminaire design, etc. There are many uncertainties such as chip layout design, thermal design and power drive design. This LED chip-centric industrial architecture is difficult to standardize the light source (light bulb) in the mode of replaceable light source, and ultimately leads to LED lights on the terminal market. Most of the overall structure lights with non-replaceable light sources are the mainstay, which increases the industrial complexity of lighting products and reduces the industrial concentration of lighting products.
进一步创造理念先进、更易标准化的LED灯泡光机模组内置驱动电源和LED照明芯片结构方案对于大规模推广LED照明意义深远。Further creating an advanced and more standardized LED bulb optomechanical module with built-in driving power supply and LED lighting chip structure scheme has far-reaching significance for large-scale promotion of LED lighting.
申请号为201310140106.7、201310140105.2、201310140134.9等中国专利申请公开了多个能在外延片制作光机模组的技术方案。把光机模板当作外延片直接生长芯片存在的问题是由于光机模板有7个规格，每个规格上都有多种功率的要求，生产者会面临品种太多批 量较小的尴尬问题；其次LED芯片及相关电路所占面积相对于光机模板面积较小，生产成本高居不下；再有是光机模板较衬底更厚，也相对地增加了成本。Chinese Patent Application Nos. 201310140106.7, 201310140105.2, 201310140134.9 and the like disclose a plurality of technical solutions capable of fabricating a optomechanical module in an epitaxial wafer. The problem of using a optomechanical template as an epitaxial wafer to directly grow a chip is that there are seven specifications for the optomechanical template, and each specification has multiple power requirements. The producer will face too many varieties. The problem of the smaller amount of defects is that the area occupied by the LED chip and the related circuit is smaller than that of the template of the optical machine, and the production cost is high; and the template of the optical machine is thicker than the substrate, and the cost is relatively increased.
发明内容Summary of the invention
本发明的目的在于，提供一种LED照明大芯片、LED驱动电源大芯片及多种光机模组。且该LED光机模组是一种更易标准化的，内置驱动电源和LED照明芯片的结构，它在结构上有利于LED照明的标准化、大规模的推广。The object of the present invention is to provide a LE D lighting large chip, an LED driving power large chip and a plurality of optical machine modules. And the LED light machine module is a more standardized, built-in drive power and LED lighting chip structure, which is structurally conducive to the standardization and large-scale promotion of LED lighting.
本发明的技术方案：LED照明大芯片，其特点是：包括一个宽度固定为W的第一透明基板，第一透明基板上设有N+1条平行的接口导线，第一透明基板上设有N颗LED芯片构成LED芯片串联组，每颗LED芯片均位于两条相邻的接口导线之间，两条相邻的接口导线的间距为WJG等于W减接口导线宽再除以N(WJG＝(W-接口导线宽)/N)，且每颗LED芯片的正负极均分别连接在两条相邻的接口导线上；且同时并联多个LED串联组，使得第一透明基板上形成可在第一透明基板长度方向上延伸的N列多行的LED芯片阵列，N为3至7之间的整数。The technical solution of the present invention is: a LED illumination large chip, which is characterized in that: a first transparent substrate having a width W is fixed, and the first transparent substrate is provided with N+1 parallel interface wires, and the first transparent substrate is provided with N LED chips form a series connection of LED chips, each LED chip is located between two adjacent interface wires, the spacing between two adjacent interface wires is W JG is equal to W minus interface wire width and then divided by N (W) JG = (W-interface wire width) / N), and the positive and negative poles of each LED chip are respectively connected to two adjacent interface wires; and a plurality of LED series groups are connected in parallel at the same time, so that the first transparent substrate N rows of rows of LED chip arrays are formed which extend in the longitudinal direction of the first transparent substrate, and N is an integer between 3 and 7.
上述的LED照明大芯片中，所述LED芯片阵列和接口导线在第一透明基板上的形成方法是：采用透明的衬底做过渡外延层形成的薄型外延片，外延片采用成熟芯片制造技术分层生长电路和LED芯片，然后经切割形成宽度为W的LED照明大芯片，其中生长出的电路包括接口导线和连接LED芯片和接口导线的连接芯片的导线，透明基板作为衬底；所述的芯片二极由于不需要焊接，可采用透明电极，如氧化铟锡(ITO)，以增加芯片的发光面积；所述的芯片成熟制造技术是，采用有机金属化学气相沉积设备分层进行覆硅、上胶、光刻、蚀刻、镀膜、合金和磨片等工艺；或者采用传统技术将LED芯片阵列贴装在印制好银浆电路的第一透明基板上，并通过倒装焊接或金丝正装焊接与第一透明基板上的银浆电路连接，获得LED照明大芯片，银浆刷电路包括接口导线和连接LED芯片和接口导线的连接芯片的导线。In the above LED lighting large chip, the LED chip array and the interface wire are formed on the first transparent substrate by using a transparent substrate as a thin epitaxial wafer formed by a transition epitaxial layer, and the epitaxial wafer adopts a mature chip manufacturing technology. a layer growth circuit and an LED chip, and then being cut to form an LED illumination large chip having a width W, wherein the grown circuit comprises an interface wire and a wire connecting the chip of the LED chip and the interface wire, and the transparent substrate is used as a substrate; Since the chip diode does not need to be soldered, a transparent electrode, such as indium tin oxide (ITO), can be used to increase the light-emitting area of the chip; the mature manufacturing technology of the chip is to layer the silicon by using an organometallic chemical vapor deposition device. Gluing, photolithography, etching, coating, alloying, and grinding, etc.; or conventionally mounting an array of LED chips on a first transparent substrate printed with a silver paste circuit, and flip-chip bonding or gold wire assembly Welding is connected with the silver paste circuit on the first transparent substrate to obtain a large LED illumination chip, and the silver paste brush circuit includes an interface wire and a connection LED chip and connection Wires connecting die wire.
LED驱动电源大芯片,其特点是：包括宽度固定为W的第二透明基板，第二透明基板印制有银浆电路，银浆电路上形成有接口导线，接口导线有接入端和输出端；接入端的宽度与光机模板(43)导线接入端的宽度WG相同或有与电气接插件相连的焊盘；输出端的银浆电路上有N+1条平行的接口导线，相邻两条接口导线的间距WJG等于W减接口导线宽再除以N(WJG＝(W-接口导线宽)/N)；第二透明基板上先 粘贴未经封装的电源驱动晶圆级芯片和整流桥晶圆级芯片，然后将未经封装的电源驱动晶圆级芯片和整流桥晶圆级芯片焊接在第二透明基板上；可将整流桥晶圆级芯片合并在电源驱动晶圆级芯片中；第二透明基板有输出端的接口导线端的宽度与LED照明大芯片的宽度W相同，高度为H2；LED驱动电源大芯片上输出端的接口导线的用途是用来连接所述的LED照明大芯片上的芯片阵列的。N为3至7之间的整数。The LED driving power large chip is characterized in that: a second transparent substrate having a width fixed to W is included, a second transparent substrate is printed with a silver paste circuit, an interface wire is formed on the silver paste circuit, and the interface wire has an access end and an output end. The width of the access end is the same as the width W G of the optical module (43) wire access end or has a pad connected to the electrical connector; the output of the silver paste circuit has N+1 parallel interface wires, adjacent to the two The spacing of the strips of the interface wires W JG is equal to the width of the W minus the interface wires and then divided by N (W JG = (W - interface wire width) / N); the second transparent substrate is pasted with an unpackaged power supply to drive the wafer level chip and Rectifier bridge wafer level chip, then soldering the unpackaged power supply wafer level chip and rectifier bridge wafer level chip on the second transparent substrate; the rectifier bridge wafer level chip can be combined in the power drive wafer level chip The width of the interface wire end of the second transparent substrate having the output end is the same as the width W of the LED illumination large chip, and the height is H2; the purpose of the interface wire on the output end of the LED driving power supply chip is to connect the LED lighting large chip. Chip array of. N is an integer between 3 and 7.
使用前述的LED照明大芯片和LED驱动电源大芯片组建的LED光机模组，它是按以下方法组建的：根据功率需要，对LED照明大芯片进行剪裁，剪裁成不同长度的LED照明大芯片具有不同的功率，在光机模板上印刷银浆电路，光机模板上银浆电路也具有接口导线，且数目和间距均与LED照明大芯片的接口导线相同；将LED照明大芯片带芯片的一面贴在光机模板带银浆电路的一面进行对焊，两者的接口导线相互对应焊接；同时将LED驱动电源大芯片带银浆电路的一面贴在光机模板带银浆电路的一面进行对焊；从而将LED照明大芯片与LED驱动电源大芯片接通；最后用透明胶封装LED照明大芯片和驱动电源大芯片周围的缝隙。所述的LED芯片承载电压约为DC3.2V(根据实际情况适当调整)或大于DC10V的高电压。The LED light machine module formed by using the above-mentioned LED lighting large chip and LED driving power large chip is formed according to the following method: according to the power requirement, the LED lighting large chip is cut and cut into LED lighting large chips of different lengths. With different power, the silver paste circuit is printed on the optomechanical template, and the silver paste circuit on the optomechanical template also has the interface wires, and the number and spacing are the same as the interface wires of the LED illumination large chip; the LED illumination large chip with the chip One side is attached to the side of the optical template with the silver paste circuit for butt welding, and the interface wires of the two are soldered correspondingly; at the same time, the side of the LED driving power large chip with the silver paste circuit is attached to the side of the optical template with the silver paste circuit. Butt welding; thus, the LED lighting large chip is connected with the LED driving power large chip; finally, the transparent light is used to encapsulate the gap between the LED lighting large chip and the driving power large chip. The LED chip carries a voltage of about DC3.2V (adjusted according to actual conditions) or a high voltage greater than DC10V.
大芯片水平布置的LED光机模组，其特点是：包括印有银浆电路的透明的光机模板，银浆电路在光机模板上形成有接口导线，其接口导线的宽度和间距与LED照明大芯片和LED驱动电源大芯片的宽度W和间距WJG相同；对于大型光机模组中功率较大的，或还需通过过渡电路集成透明块将光机模板与1个以上的LED驱动电源大芯片连接；再将前述的LED驱动电源大芯片和LED照明大芯片带银浆电路的一面透明光机模板带银浆电路的一面按接口导线对焊得大芯片水平布置的LED光机模组。The large-chip horizontally arranged LED light machine module is characterized in that it comprises a transparent light machine template printed with a silver paste circuit, the silver paste circuit forms an interface wire on the light machine template, and the width and spacing of the interface wire and the LED The width of the large chip and the LED driver power supply are the same as the width W JG ; for large power modules, it is necessary to drive the optical template and more than one LED through the transition circuit integrated transparent block. Power supply large chip connection; then the above-mentioned LED drive power large chip and LED illumination large chip with a silver paste circuit on one side of the transparent light machine template with a silver paste circuit side by the interface wire butt welded to the large chip horizontally arranged LED light machine mode group.
前述的大芯片水平布置LED光机模组中，对于中、小型的LED光机模组，外部电源或信号直接通过接插件从焊接在光机模板的LED驱动电源大芯片上接入；对于大型的LED光机模组，光机模板上还焊接有柔性电路，外部电源或信号通过接插件连接柔性电路接入到焊接在光机模板上的LED驱动电源大芯片上；对于大型LED光机模组中功率较大的，光机模板上焊接有一个及以上的LED驱动电源大芯片和一个及以上的LED照明大芯片；还可沿LED驱动电源大芯片、LED照明大芯片和或过渡电路集成透明块周边封透明胶得LED光机模组。 In the above-mentioned large chip horizontal arrangement LED light machine module, for medium and small LED light machine modules, an external power source or signal is directly connected through a connector from a large LED driving power source chip soldered to the light template; The LED light machine module has a flexible circuit soldered on the light machine template, and the external power source or signal is connected to the flexible circuit through the connector to the LED driving power large chip soldered on the light machine template; for the large LED light machine mode The power of the group is large, and one or more LED driving power large chips and one or more LED lighting large chips are soldered on the optical template; the LED driving power large chip, the LED lighting large chip and the transition circuit can also be integrated. The transparent block is sealed with a transparent glue to obtain an LED light machine module.
前述的大芯片水平布置LED光机模组中，所述的透明过渡电路集成透明块包括第三透明基板，第三透明基板上印刷有银浆电路，银浆电路有接口导线，接口导线有1组接入端和1组以上的输出端；接入端的宽度与光机模板导线接入端的宽度WG相同；输出端的接口导线宽度与LED驱动电源大芯片的接入端宽度WG相同；将过渡电路集成透明块上印刷有银浆电路的一面与光机模板的带银浆电路的一面按接口导线对焊。过渡电路集成透明块用于将外部电源或信号接入一个以上的LED驱动电源大芯片，再通过LED驱动电源大芯片输出到LED照明大芯片上。它解决了由于LED光机模组的电路要求，要使外部电源或信号接入LED驱动电源大芯片或LED驱动电源大芯片输出到LED照明大芯片的电路需涉及到光机模板上双面的印刷电路方能实现，由于一般情况下光机模板的背部将紧贴散热器使用，而散热器大多由金属制成，光机模板的背部需要绝缘，无法实现双面印刷电路的问题。In the foregoing large chip horizontal arrangement LED light machine module, the transparent transition circuit integrated transparent block comprises a third transparent substrate, the third transparent substrate is printed with a silver paste circuit, the silver paste circuit has an interface wire, and the interface wire has 1 and at least one set of access terminal sets an output terminal; the same width as the access terminal ray templates access end wire width W G; the same as the width of the interface wires to the LED driving power output of the access end of the large chip width W G; the The side of the transition circuit integrated transparent block printed with the silver paste circuit is butt welded to the side of the optical template with the silver paste circuit by the interface wire. The transition circuit integrated transparent block is used to connect an external power source or signal to more than one LED driving power large chip, and then output the large chip to the LED lighting large chip through the LED driving power. It solves the circuit requirements of the LED light machine module, so that the external power supply or signal should be connected to the LED drive power large chip or the LED drive power large chip output to the LED lighting large chip circuit needs to be involved on the optical machine template on both sides The printed circuit can be realized. Generally, the back of the optomechanical template will be used close to the heat sink, and the heat sink is mostly made of metal. The back of the optomechanical template needs to be insulated, and the problem of the double-sided printed circuit cannot be realized.
大芯片垂直布置的LED光机模组，其特点是：包括印有银浆电路的透明的光机模板，银浆电路在光机模板上形成有接口导线，其接口导线的宽度和间距与LED照明大芯片及LED驱动电源大芯片的宽度W和间距WJG相同；通过1个及以上的呈L状的D型透明过渡电路集成透明块将LED照明大芯片垂直于光机模板连接到光机模板上；或对于大型光机模板，通过B型透明过渡电路集成透明块将LED驱动电源大芯片与1个及以上的呈L状的C型透明过渡电路集成透明块将1个及以上LED照明大芯片垂直于光机模板连接到光机模板上；再将LED驱动电源大芯片带银浆电路的一面与透明光机模板带银浆电路的一面按接口导线对焊得光机模组。A large-chip vertically arranged LED light machine module is characterized in that it comprises a transparent light machine template printed with a silver paste circuit, and the silver paste circuit forms an interface wire on the light machine template, the width and spacing of the interface wires and the LED The large width of the large chip and the LED driver power supply chip have the same width W and the spacing W JG ; the LED illumination large chip is connected to the optical machine template perpendicularly to the optical machine template through one or more L-shaped transparent transition circuit integrated transparent blocks. On the stencil; or for a large optomechanical template, the transparent drive block of the B-type transparent transition circuit integrates the LED drive power chip with one or more L-shaped C-type transparent transition circuits. The transparent block will illuminate one or more LEDs. The large chip is connected to the optomechanical template perpendicular to the templating template; then the side of the LED driving power large chip with the silver paste circuit and the side of the transparent tempering template with the silver paste circuit are soldered to the optical module by the interface wire.
前述的大芯片垂直布置LED光机模组中，对于中、小型的LED光机模组，外部电源或信号直接通过接插件从焊接在光机模板上的LED驱动电源大芯片上接入；对于大型的LED光机模组，光机模板上还焊接有柔性电路，外部电源或信号通过接插件连接柔性电路接入到焊接在光机模板上的LED驱动电源大芯片上；最后沿LED驱动电源大芯片、LED照明大芯片和B型透明过渡电路集成透明块(或C型透明过渡电路集成透明块，或D型透明过渡电路集成透明块)周边封透明胶得封装完整的LED光机模组。In the above-mentioned large chip vertically arranged LED light machine module, for the medium and small LED light machine module, the external power source or signal is directly connected through the connector from the LED driving power large chip soldered on the light machine template; Large LED light machine module, the optical machine template is also welded with a flexible circuit, the external power supply or signal is connected to the flexible circuit through the connector to the LED driving power large chip soldered on the optical template; the last along the LED driving power supply Large chip, LED lighting chip and B-type transparent transition circuit integrated transparent block (or C-type transparent transition circuit integrated transparent block, or D-type transparent transition circuit integrated transparent block) peripheral sealed transparent plastic packaged complete LED light machine module .
前述的大芯片垂直布置LED光机模组中，所述D型透明过渡电路集成透明块包括L型的透明基板，透明基板上印刷有银浆电路，银浆电路为L型的接口导线，其接口导线的宽度、数量和间距与LED照 明大芯片及LED驱动电源大芯片的宽度W、数量N+1和间距WJG相同；所述C型透明过渡电路集成透明块包括L型的透明基板，透明基板上印刷有银浆电路，银浆电路为空间上呈L型的2组接口导线，每1组的接口导线的宽度、数量和间距与LED照明大芯片和LED驱动电源大芯片的宽度W、数量N+1和间距WJG相同；所述的LED照明大芯片带银浆电路的一面与呈L型的透明过渡电路集成透明块带银浆电路的一面按接口导线对焊；L型的透明过渡电路集成透明块的带银浆电路另一面与光机模板的带银浆电路的一面按接口导线对焊；所述的B型透明过渡电路集成透明块的接口导线有1组接入端和1组以上的输出端，其接口导线的宽度、数量和间距与LED驱动电源大芯片的宽度W、数量N+1和间距WJG相同。In the foregoing large chip vertically arranged LED light machine module, the D-type transparent transition circuit integrated transparent block comprises an L-shaped transparent substrate, a silver paste circuit is printed on the transparent substrate, and the silver paste circuit is an L-shaped interface wire, The width, the number and the spacing of the interface wires are the same as the width W, the number N+1 and the spacing W JG of the LED lighting large chip and the LED driving power large chip; the C-type transparent transition circuit integrated transparent block comprises an L-shaped transparent substrate, A silver paste circuit is printed on the transparent substrate, and the silver paste circuit is a pair of interface wires of L-shaped space, the width, number and spacing of the interface wires of each group and the width of the large chip of the LED illumination large chip and the LED driving power source W The number of N+1 and the spacing W JG are the same; the side of the LED illumination large chip with the silver paste circuit and the transparent transition circuit of the L-shaped transparent block with the silver paste circuit are butt welded by the interface wire; The transparent transition circuit integrates the transparent block with the silver paste circuit on the other side and the side of the optical template with the silver paste circuit is butt welded according to the interface wire; the B-type transparent transition circuit has a set of access terminals for the interface wire of the transparent block integrated transparent block And 1 group The output terminal, the width, number and spacing of the LED drive interface wires width W large chip power, N + the number 1 and the same pitch W JG.
大芯片在非绝缘导热基板上的布置方法，其特点是：包括非绝缘导热基板，E型透明过渡电路集成透明块背对银浆电路的一面紧密贴合非绝缘导热基板布置；将LED驱动电源大芯片带接口导线电路的一面贴合在E型透明过渡电路集成透明块带银浆电路的一面进行对焊；LED照明大芯片背对银浆电路的一面紧密贴合非绝缘导热基板布置，其接口导线端与E型透明过渡电路集成透明块输出端接口导线端对齐；所述的LED照明大芯片带芯片的一面还设有F型透明过渡电路集成透明块；所述的F型透明过渡电路集成透明块带银浆电路面的一端与LED照明大芯片带银浆电路的一面按接口导线进行对焊，另一端再与E型透明过渡电路集成透明块带银浆电路的一面按接口导线进行对焊得LED光机模组。The arrangement method of the large chip on the non-insulating heat-conducting substrate is characterized in that: the non-insulating heat-conducting substrate is included, the E-type transparent transition circuit is integrated with the transparent block, and one side of the silver paste circuit is closely attached to the non-insulating heat-conducting substrate; the LED driving power source is One side of the large chip with the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block with the silver paste circuit for conducting butt welding; the side of the LED illumination large chip facing the silver paste circuit closely fits the non-insulated thermal conductive substrate arrangement, The interface wire end is aligned with the E-type transparent transition circuit integrated transparent block output end interface wire end; the LED illumination large chip with the chip side is further provided with an F-type transparent transition circuit integrated transparent block; the F-type transparent transition circuit One end of the integrated transparent block with the silver paste circuit surface and the side of the LED illumination large chip with the silver paste circuit are butt welded according to the interface wire, and the other end is integrated with the E-type transparent transition circuit, and the transparent block with the silver paste circuit is connected by the interface wire. Soldering the LED light machine module.
上述的大芯片在非绝缘导热基板上的布置方法中，非绝缘导热基板为金属或非金属导热材料制作，与LED照明大芯片贴合面为镜面；所述的非绝缘导热基板可以采用光机模板(的型式，或灯泡的导热支架的型式，或其他似散热器的型式；对于采用中、小型的LED光机模板，外部电源或信号直接通过接插件焊接在贴合于光机模板上的LED驱动电源大芯片上接入；对于采用大型的LED光机模组，外部电源或信号通过接插件连接柔性电路接入到透明过渡电路集成透明块上再导入LED驱动电源大芯片；所述的LED驱动电源大芯片上或还设置有透明盖板；所述的LED光机模组沿LED驱动电源大芯片、LED照明大芯片、E型透明过渡电路集成透明块和F型透明过渡电路集成透明块周边封透明胶得到封装完整的LED光机模组。In the method for arranging the large chip on the non-insulating heat-conducting substrate, the non-insulating heat-conducting substrate is made of a metal or non-metal heat-conducting material, and the bonding surface of the large chip with the LED illumination is a mirror surface; the non-insulating heat-conducting substrate may be a light machine. The type of template, or the type of heat-conducting bracket of the bulb, or other type of radiator-like type; for medium and small LED templating templates, the external power supply or signal is directly soldered to the templating template by the connector. The LED driving power supply is connected on a large chip; for the large-sized LED optical machine module, the external power supply or signal is connected to the flexible circuit through the connector to the transparent transparent circuit integrated transparent block and then the LED driving power large chip is introduced; The LED driving power supply chip is also provided with a transparent cover plate; the LED light machine module is integrated and transparent along the LED driving power large chip, the LED lighting large chip, the E-type transparent transition circuit integrated transparent block and the F-type transparent transition circuit. A transparent LED is mounted on the block to obtain a packaged LED light machine module.
前述的大芯片在非绝缘导热基板上的布置方法中，所述的E型透 明过渡电路集成透明块包括第三透明基板，第三透明基板上印刷有银浆电路，银浆电路为接口导线，接口导线有接入端和输出端。接入端接口导线的宽度与柔性电路接入端的宽度WG1相同或有与电气接插件相连的焊盘，输出端的接口导线的宽度、数量和间距与LED照明大芯片的宽度W、数量N+1和间距WJG相同，接口导线或还与LED驱动电源大芯片的输入端连接，其宽度为WG；所述的F型透明过渡电路集成透明块包括第四透明基板，第四透明基板上印刷有银浆电路，银浆电路为接口导线，接口导线的宽度、数量和间距与LED照明大芯片的宽度W、数量N+1和间距WJG相同。过渡电路集成透明块用于将外部电源或信号接入一个以上的LED驱动电源大芯片，再通过LED驱动电源大芯片输出到LED照明大芯片上。它解决了外部电源或信号接入LED驱动电源大芯片或LED驱动电源大芯片输出到LED照明大芯片的电路需涉及电路转换问题。In the method for arranging the large chip on the non-insulating heat-conducting substrate, the E-type transparent transition circuit integrated transparent block comprises a third transparent substrate, the third transparent substrate is printed with a silver paste circuit, and the silver paste circuit is an interface wire. The interface wires have an access terminal and an output terminal. The width of the access terminal wire is the same as the width W G1 of the flexible circuit access end or the pad connected to the electrical connector, the width, number and spacing of the interface wires at the output end and the width of the LED illumination chip W, the number N+ 1 and the spacing W JG is the same, the interface wire is also connected to the input end of the LED driving power large chip, and its width is W G ; the F-type transparent transition circuit integrated transparent block includes a fourth transparent substrate, and the fourth transparent substrate The silver paste circuit is printed, and the silver paste circuit is an interface wire. The width, number and spacing of the interface wires are the same as the width W, the number N+1 and the spacing W JG of the LED illumination large chip. The transition circuit integrated transparent block is used to connect an external power source or signal to more than one LED driving power large chip, and then output the large chip to the LED lighting large chip through the LED driving power. It solves the circuit conversion problem of the external power supply or signal input LED drive power large chip or LED drive power large chip output to the LED illumination large chip circuit.
前述的其他似散热器型式的非绝缘导热基板包含散热器，散热器上设有内卡环和内罩的固定槽，内卡环和内罩的固定槽粘接固定在固定槽中，内卡环由螺钉二次固定；所述的带荧光粉的内罩或可用在LED照明大芯片表面设置带荧光粉的透明胶的方案替代；或可设置内环罩粘接在内卡环和内罩之间；透镜粘接固定在内卡环上，并通过透镜卡环二次固定，透镜卡环由卡环固定螺钉固定在内卡环上；所述的散热器上还设有接插件，柔性电路与接插件和透明过渡电路集成透明块连接。The other non-insulating heat-conducting substrate of the heat sink type comprises a heat sink, and the heat sink is provided with an inner snap ring and a fixing groove of the inner cover, and the inner snap ring and the fixing groove of the inner cover are fixed and fixed in the fixing groove, the inner card The ring is fixed by screws twice; the inner cover with phosphor or the transparent glue with phosphor on the surface of the LED illumination large chip can be replaced; or the inner ring cover can be bonded to the inner snap ring and the inner cover The lens is fixedly fixed on the inner snap ring and fixed by the lens retaining ring twice, and the lens retaining ring is fixed on the inner snap ring by the snap ring fixing screw; the heat sink is further provided with a connector, and the flexible The circuit is connected to the connector and the transparent transition circuit with an integrated transparent block.
前述的LED的驱动方法，其特点是：将市电AC通过整流桥转化为脉动直流电，脉动直流电的电压大于零，小于等于脉动直流电额定最大工作电压VWR，在脉动直流电上设置3～7段LED负载，各段LED负载串联在一起形成LED负载串联段组，在脉动直流电的电压升高时，LED负载串联的段数逐级增加，在脉动直流电的电压下降时，LED负载串联的段数逐级减小，LED负载串联的段数为实际连入脉动直流电的LED负载串联的段数。市电AC经过整流桥后变成脉动直流电，例：AC220V，50Hz交流电经整流桥整流后，电压为半个周期(180度)的波形曲线，周期在0度时脉动直流电压为零，在90度时脉动直流电压达到最大值VWR为最高DC311V，180度时，电压又降为零，周而复始。The foregoing driving method of the LED is characterized in that: the mains AC is converted into a pulsating direct current through a rectifier bridge, the voltage of the pulsating direct current is greater than zero, less than or equal to the rated maximum working voltage V WR of the pulsating direct current, and the third to seventh segments are set on the pulsating direct current. LED load, each segment of LED load is connected in series to form an LED load series segment group. When the voltage of the pulsating direct current increases, the number of segments of the LED load series increases step by step. When the voltage of the pulsating direct current decreases, the number of segments of the LED load connected in series is stepwise. Decrease, the number of segments in which the LED load is connected in series is the number of segments in which the LED load actually connected to the pulsating direct current is connected in series. After the mains AC passes through the rectifier bridge, it becomes a pulsating DC power. For example: AC220V, 50Hz AC is rectified by the rectifier bridge, and the voltage is a half-period (180 degree) waveform. When the period is 0 degrees, the pulsating DC voltage is zero. When the pulsating DC voltage reaches the maximum value, V WR is the highest DC 311V. At 180 degrees, the voltage drops to zero again and again.
前述的LED驱动方法中，所述LED负载串联的段通过开关进行控制，开关的控制节点为电压的分段界限，所述电压的分段数量与LED 负载串联的段数相对应。LED负载可分为3～7段，分段少，电路简单，但电流变化较大，容易在电网产生低次谐波；分段多，则电路结构复杂。一般取4～6段为佳。In the foregoing LED driving method, the segment in which the LED load is connected in series is controlled by a switch, and the control node of the switch is a segmentation limit of the voltage, the number of segments of the voltage and the LED The number of segments in the load series corresponds. The LED load can be divided into 3 to 7 segments, with few segments and simple circuit, but the current varies greatly, and it is easy to generate low-order harmonics in the power grid; if there are many segments, the circuit structure is complicated. Generally, 4 to 6 segments are preferred.
前述的LED驱动方法中，所述LED负载串联的段数的控制方法是：将每段LED负载的负极方向分别通过开关连接脉动直流电的负极，然后根据脉动直流电的电压变化对各个开关的通断进行控制，使用将某几段开关断路(从而LED负载也断路)的方式实现LED负载串联的段数的改变。In the foregoing LED driving method, the method for controlling the number of segments of the LED load in series is: connecting the negative direction of each LED load to the negative pole of the pulsating direct current through a switch, and then performing on/off of each switch according to the voltage change of the pulsating direct current. Control, using a way to open some segments of the switch (and thus the LED load is also open) to achieve the change in the number of segments of the LED load series.
前述的LED驱动方法中，设定脉动直流电的脉动直流工作电压VW大于VWmax的时段，控制所有开关断开，停止向所有LED负载供电，实现对LED的过电压及浪涌保护；通过外部设置一给定电压VT来调整脉动直流电的最大允许脉动直流电压VWmax的大小，从而实现对LED的发光亮度调整。In the foregoing LED driving method, when the pulsating direct current working voltage V W of the pulsating direct current is set to be longer than V Wmax , all the switches are controlled to be disconnected, power supply to all the LED loads is stopped, and overvoltage and surge protection for the LED are realized; A given voltage V T is set to adjust the maximum allowable pulsating DC voltage V Wmax of the pulsating direct current, thereby achieving adjustment of the illuminance of the LED.
前述的LED驱动方法中，所述的开关在脉动直流电压上升阶段延时tm(如tm＝0.1ms)毫秒动作；在脉动直流电压下降阶段提前tm(如tm＝0.1ms)毫秒动作；以获得相对较平稳的LED工作电流。In the foregoing LED driving method, the switch operates in a pulsating DC voltage rising phase delay time t m (eg, t m =0.1 ms) milliseconds; in the pulsating DC voltage falling phase, an advance t m (eg, t m =0.1 ms) milliseconds Action; to obtain a relatively smooth LED operating current.
前述的LED驱动方法中，通过设置电流传感器测得电路中有效工作电流IW，当IW超过设计值KIWR时，关闭所有开关以实现电流保护，开关的开启需在下次重新加载电压后恢复，其中K为调整系数，IWR为额定有效工作电流。In the foregoing LED driving method, the effective working current I W in the circuit is measured by setting a current sensor. When I W exceeds the design value KI WR , all switches are turned off to achieve current protection, and the opening of the switch needs to be restored after the next reloading of the voltage. Where K is the adjustment factor and I WR is the rated effective operating current.
前述的LED驱动方法中，设置2组带驱动和LED负载的完整电路同时一起工作，其中：1组LED负载具有较高的色温，当所述的给定电压VT值趋于低时，所述的最大允许脉动直流电压VWmax趋于高值；而另1组LED负载具有较低的色温，当所述的给定电压VT值趋于低时，所述的最大允许脉动直流电压VWmax趋于低值。调节所述的给定电压VT值可实现LED照明色温的调整。In the foregoing LED driving method, two sets of complete circuits of the belt driving and the LED load are set to work together at the same time, wherein: one group of LED loads has a higher color temperature, and when the given voltage V T value tends to be low, The maximum allowable pulsating DC voltage V Wmax tends to be high; while the other set of LED loads have a lower color temperature, the maximum allowable pulsating DC voltage V when the given voltage V T value tends to be low Wmax tends to be low. Adjusting the given voltage V T value can achieve adjustment of the LED illumination color temperature.
前述的LED驱动方法中，设置串联在一起的每一段LED负载为具有不同的最大承载电压值的LED芯片组；可使在开关控制下工作的LED负载串联段组获得接近理想正弦波的工作电流曲线。In the foregoing LED driving method, each LED load connected in series is set as an LED chip set having different maximum carrying voltage values; the LED load series segment group working under the switch control can obtain an operating current close to an ideal sine wave. curve.
前述的LED驱动方法中，所述每一段LED负载的LED芯片组的最大承载电压的调整方法是：(关键在于计算出串联段组总的最大承载电压值)①以脉动直流电压为纵坐标、脉动直流周期(180度)为横坐标作图；②假定一个纯电阻负载，其功率在脉动直流半波形成的正弦图形面积为1，作图；③由于LED电压增加电流大增，实质为功率 性损坏。设定LED负载串联段组的承载功率为纯电阻负载的120％，作一面积为1.2的矩形阴影图，矩形阴影的纵坐标值即为串联段组总的最大承载电压值；④同理，已知LED芯片组承载电压情况下，可作图得出芯片组的图形面积，逐段验证芯片组的面积之和大于开关的控制节点下的脉动直流正弦波面积；⑤按商品来选取串联段组上芯片组的承载电压值，相加大于等于串联段组总的最大承载电压值即可；其中，承载电压值较高的LED芯片组靠近正极端(始段)，承载电压值较低的LED芯片组靠近负极端(末段)。In the foregoing LED driving method, the method for adjusting the maximum carrying voltage of the LED chip set of each segment of the LED load is: (the key is to calculate the total maximum carrying voltage value of the series segment group) 1 with the pulsating DC voltage as the ordinate, The pulsating DC period (180 degrees) is plotted on the abscissa; 2 assuming a purely resistive load, the power of the sinusoidal pattern formed by the pulsating DC half-wave is 1 and plotted; 3 due to the increase in the LED voltage, the current is substantially increased. Sexual damage. Set the carrying capacity of the LED load series segment group to 120% of the pure resistive load, and make a rectangular shadow map with an area of 1.2. The ordinate value of the rectangular shadow is the total maximum carrying voltage value of the series segment group; 4 Similarly, Knowing that the LED chipset bears the voltage, the graph area of the chipset can be drawn, and the sum of the area of the chipset is verified to be larger than the pulsating DC sine wave area under the control node of the switch; 5 The carrying voltage values of the chipset on the group may be greater than or equal to the total maximum carrying voltage value of the series segment group; wherein the LED chip set with a higher carrying voltage value is close to the positive terminal (the initial segment), and the carrying voltage value is lower. The LED chipset is close to the negative terminal (the last segment).
实现前述方法的LED照明电路，其特点是：包括输入端连接市电的整流桥，整流桥的输出端的正极连接在3～7段串接的LED负载的正极，每段LED负载的负极均分别连接在驱动电源芯片的连接节点上，整流桥的输出端的负极连接在驱动电源芯片的接地端,所述驱动电源芯片上还设有连接在所有LED负载的最前端的工作电压检测端,所述驱动电源芯片上还设有最大允许脉动直流电压调节端。The LED lighting circuit for realizing the foregoing method is characterized in that: the rectifier bridge including the input end connected to the main power, the anode of the output end of the rectifier bridge is connected to the positive pole of the LED load connected in series of 3 to 7 segments, and the negative pole of each LED load is respectively Connected to the connection node of the driving power chip, the negative end of the output end of the rectifier bridge is connected to the ground end of the driving power chip, and the driving power chip further has an operating voltage detecting end connected to the front end of all the LED loads, The maximum allowable pulsating DC voltage regulation terminal is also provided on the driving power chip.
前述的LED照明电路中，所述驱动电源芯片包括电压检测及逻辑开关控制器、电压检测及逻辑开关控制器上设有工作电压检测端和最大允许脉动直流电压调节端；还包括连接节点，每个连接节点均分别通过开关管连接至接地端,且每个开关管的控制端均连接在电压检测及逻辑开关控制器上。In the foregoing LED lighting circuit, the driving power chip comprises a voltage detecting and logic switch controller, a voltage detecting and a logic switch controller, and a working voltage detecting end and a maximum allowable pulsating DC voltage adjusting end; and a connection node, each Each of the connection nodes is connected to the ground through a switch, and the control terminals of each switch are connected to the voltage detection and logic switch controller.
前述的LED照明电路中，所述每个连接节点均分别通过开关管连接在同一条合并连接线上，再通过合并连接线连接到接地端，合并连接线上设有电流检测电路，电流检测电路的输出端连接在电压检测及逻辑开关控制器上。In the foregoing LED lighting circuit, each of the connection nodes is respectively connected to the same merged connection line through the switch tube, and then connected to the ground end through the merged connection line, and the current detection circuit is provided on the merged connection line, and the current detection circuit is provided. The output is connected to the voltage detection and logic switch controller.
前述的LED光机模组中，所述光机模板的材质为薄片非金属透明材料(如SiO2，Al2O3等)，它是将薄型板材加温到近材料软化点，利用模具采用冲压设备冲压成型的。(材料易脆且硬度较高。这样只能切割方式进行加工成光机模板形状时，成本较高。)In the foregoing LED light machine module, the material of the light machine template is a sheet non-metallic transparent material (such as SiO 2 , Al 2 O 3 , etc.), which is to heat the thin plate to a softening point of the near material, and adopts a mold. Stamping equipment is stamped and formed. (The material is brittle and has a high hardness. This can only be processed when it is cut into a stencil form shape, and the cost is high.)
使用前述的LED光机模组组建LED照明核心构件的方法：在LED光机模组上设置柔性电路后装入带荧光粉的内罩即可；带荧光粉的内罩是将含荧光粉的注塑颗粒料与不含荧光粉的透明注塑颗粒料混匀；混合比例根据需要配置，然后通过注塑成型即得；其中所述含荧光粉的注塑颗粒料是将20～30％荧光粉体与70～80％透明注塑颗粒料混匀，热熔后重新制成注塑颗粒料；荧光粉选用余辉时间大于8ms的荧光粉。The method for constructing the LED lighting core component by using the foregoing LED light machine module: the flexible circuit is arranged on the LED light machine module, and the inner cover with the phosphor is loaded; the inner cover with the phosphor is phosphor-containing The injection molding granules are mixed with the transparent injection-molded granules containing no phosphor; the mixing ratio is configured as needed, and then obtained by injection molding; wherein the phosphor-containing injection granules are 20 to 30% phosphor powder and 70 ~80% transparent injection granules are mixed, and then re-formed into injection-molded pellets after hot-melting; phosphors with phosphors with afterglow time greater than 8ms are used.
另一种LED光机模组，其特点是：包括透明的光机模板，光机 模板上印制有银浆印刷电路，光机模板上粘贴有电源驱动晶圆级芯片和整流桥晶圆级芯片，电源驱动晶圆级芯片和整流桥晶圆级芯片为未封装的晶圆级器件；电源驱动晶圆级芯片和整流桥晶圆级芯片通过倒装焊接或正装焊接金线与银浆印刷电路焊接；光机模板上还可设有与银浆印刷电路相互焊接的柔性转接电路；所述光机模板上还粘结有LED芯片阵列；LED芯片阵列由多个并联在一起的串联段组成，且每个串联段由3～7颗(能承受高电压的)LED芯片串联组成的，每个LED芯片通过倒装焊接或正装焊接金线与银浆印刷电路焊接。Another LED light machine module is characterized by: including a transparent light machine template, a light machine A silver paste printed circuit is printed on the template, and a power source driving wafer level chip and a rectifier bridge wafer level chip are pasted on the optical template, and the power driving wafer level chip and the rectifier bridge wafer level chip are unpackaged wafer level. The device; the power-driven wafer-level chip and the rectifier bridge wafer-level chip are soldered to the silver paste printed circuit by flip-chip bonding or dress-welding gold wire; the optical template can also be provided with a flexible transfer soldered to the silver paste printed circuit. a circuit chip; the LED chip array is also bonded with an array of LED chips; the LED chip array is composed of a plurality of series segments connected in parallel, and each series segment is composed of 3 to 7 LED chips capable of withstanding high voltage. Composed, each LED chip is soldered to the silver paste printed circuit by flip chip bonding or dressing solder gold wire.
上述的LED光机模组中，所述电源驱动晶圆级芯片、整流桥晶圆级芯片和LED芯片之间填充有用于找平的透明封胶，然后再采用除预留安装和焊接位置外，型式和尺寸与光机模板的相同的透明盖板加盖其上形成密封；或者直接在电源驱动晶圆级芯片、整流桥晶圆级芯片和LED芯片形成一层将电源驱动晶圆级芯片、整流桥晶圆级芯片和LED芯片密封的透明封胶。In the above LED light machine module, the power source driving wafer level chip, the rectifier bridge wafer level chip and the LED chip are filled with a transparent sealant for leveling, and then, in addition to the reserved installation and soldering position, Type and size of the same transparent cover plate with the templating template to form a seal thereon; or directly drive the wafer level chip, the rectifier bridge wafer level chip and the LED chip to form a layer to drive the wafer level chip, Rectifier bridge wafer level chip and LED chip sealed transparent sealant.
与现有技术相比，本发明的LED照明大芯片可以方便地用于不同功率要求的LED光机模组，它可以在电源大芯片的驱动下，LED照明大芯片被设计成固定的宽度W，长度则根据制造设备的规格来确定，使用时来分割成不同的长度。这样LED照明大芯片不需针对单个LED芯片来切割成毫米级尺寸，芯片制作时将降低对衬底的机械特性要求，使类似多晶的高纯氧化铝等进入衬底的选择范围，大幅度地降低了LED照明芯片的制造成本；照明大芯片中的每颗LED芯片两极无需焊接，电极可做的较小同时并可采用透明电极的方案，会有效地增加芯片的发光面积和提高发光效率；从芯片厂开始，照明大芯片只需结合电源大芯片即可直接贴装焊接在光机模板上、或灯泡导热支架上，LED照明生产流程短而简单。同时，大芯片按使用功率分段切割，设计、生产到产品整个过程中容易确定的因数较多，便于对其控制来实现标准化作业；按使用功率来分割的照明大芯片可满足大多数照明应用要求，这样非切割的、数量有限的照明大芯片容易实现高度的产业集中度，将大幅度减少照明产品的制造成本；改变了LED现有的封装产业概念，照明大芯片采用倒装后只需简单封装大芯片周边即可，或采用正装时可采用盖板封装等工艺，绕开了国外的专利壁垒。Compared with the prior art, the LED lighting large chip of the invention can be conveniently used for LED light machine modules with different power requirements, and can be driven by a large power chip, and the LED lighting large chip is designed to have a fixed width W. The length is determined according to the specifications of the manufacturing equipment, and is divided into different lengths when used. In this way, the LED lighting large chip does not need to be cut into a millimeter size for a single LED chip, and the mechanical characteristics of the substrate are reduced when the chip is fabricated, so that the selection range of the polycrystalline high-purity alumina and the like enters the substrate is greatly increased. The manufacturing cost of the LED lighting chip is reduced; the LEDs of each LED chip in the large chip do not need to be soldered, and the electrode can be made smaller and the transparent electrode can be used, which can effectively increase the light emitting area of the chip and improve the luminous efficiency. Starting from the chip factory, the large-scale lighting chip can be directly mounted on the light machine template or the heat-conducting bracket of the light bulb in combination with the large power chip. The LED lighting production process is short and simple. At the same time, the large chip is cut according to the power use. The factors that are easy to determine during the whole process of design and production to the product are easy to control and realize the standardization operation. The large-scale lighting chip divided by the power can satisfy most lighting applications. It is required that such a non-cutting and limited number of large-scale lighting chips can easily achieve a high degree of industrial concentration, which will greatly reduce the manufacturing cost of lighting products; change the existing packaging industry concept of LEDs, and only need to flip the large chips after lighting It can be simply packaged around the large chip, or it can be covered by a cover plate when using a formal package, bypassing the patent barriers of foreign countries.
本发明的LED照明大芯片可以满足LED照明应用如驱动、调光、过电压及浪涌保护、过载等的各种基本需求，且可以把体积做的较小，以至于可以将驱动电源放到灯泡内部甚至光机模组内部。这对LED照 明低成本、小型化具有非常重要的意义。从而可以推动了LED芯片的朝集成化的方向发展，使照明大芯片的出现成为现实。二者的共同使用将进一步推动LED照明产业的快速发展。The LED lighting large chip of the invention can meet various basic requirements of LED lighting applications such as driving, dimming, over voltage and surge protection, overload, etc., and can be made smaller in size, so that the driving power can be put The inside of the bulb is even inside the optomechanical module. This pair of LED photos Low cost and miniaturization are very important. Therefore, the development of the LED chip in the direction of integration can be promoted, and the emergence of the large-scale illumination chip becomes a reality. The joint use of the two will further promote the rapid development of the LED lighting industry.
本发明的光机模组可以适用于本发明人在先申请的各类灯泡专利，替代灯泡中原有的光机模组。本发明的光机模组在结构上可以内置电源和LED照明芯片，而且体积小，易于实现标准化。本发明可以改变现有的以LED芯片为中心的产业架构，本发明的LED光机模组可以在可更换光源的模式下实现光源(灯泡)标准化，从而可以降低照明产品的产业复杂度和提高照明产品的产业集中度。The optomechanical module of the present invention can be applied to various types of bulb patents previously applied by the inventors, replacing the original optomechanical modules in the bulb. The optomechanical module of the invention can be built with a power source and an LED illumination chip, and has a small size and is easy to standardize. The invention can change the existing industrial structure centered on the LED chip, and the LED light machine module of the invention can realize the standardization of the light source (light bulb) in the mode of the replaceable light source, thereby reducing the industrial complexity and improvement of the lighting product. Industrial concentration of lighting products.
本发明的LED大芯片可以采用外接驱动电源直接驱动。The LED large chip of the present invention can be directly driven by an external driving power source.
另外，本发明通过整流桥将市电转化为脉动直流电，同时将每个周期内的电压按相位分割为多段，且利用多段内电压不同的特性，使用开关对串接入工作状态的LED负载的段数进行调节，从而使LED负载进入控制化的运行模式，该运行模式可以满足LED芯片供电，而且本发明的这种LED驱动方式可以极大地减少LED驱动电源的复杂性，从而使得LED光机模组内置驱动电源成为可能，这对于LED灯泡实现更大的通用性和互换性意义重大。In addition, the present invention converts the commercial power into the pulsating direct current through the rectifier bridge, and simultaneously divides the voltage in each cycle into multiple segments according to the phase, and utilizes the characteristics of different voltages in the plurality of segments, and uses the switch pair to connect the LED load of the working state. The number of segments is adjusted so that the LED load enters a controlled operation mode, which can satisfy the power supply of the LED chip, and the LED driving method of the present invention can greatly reduce the complexity of the LED driving power supply, thereby making the LED optical mode A built-in drive power supply is possible, which is significant for achieving greater versatility and interchangeability of LED bulbs.
附图说明DRAWINGS
图1为本发明LED芯片外观主视图；Figure 1 is a front elevational view showing the appearance of an LED chip of the present invention;
图2为本发明LED照明大芯片外观图；2 is an external view of a LED lighting large chip of the present invention;
图3为本发明采用金丝焊结的LED照明大芯片外观图；3 is an external view of a large LED illumination chip using gold wire bonding according to the present invention;
图4为本发明大功率LED驱动电源大芯片主视图；4 is a front view of a large chip of a high power LED driving power supply according to the present invention;
图5为本发明小功率LED驱动电源大芯片主视图；Figure 5 is a front view of the large chip of the low power LED driving power supply of the present invention;
图6为本发明带电阻的大功率LED驱动电源大芯片主视图；6 is a front view of a large chip of a high power LED driving power source with a resistor according to the present invention;
图7为本发明印制有银浆电路的大型光机模板；Figure 7 is a large optomechanical template printed with a silver paste circuit of the present invention;
图8为本发明未封胶的大型光机模组；Figure 8 is a large optomechanical module of the present invention;
图9为本发明已封胶的大型光机模组；Figure 9 is a large optomechanical module of the invention;
图10为本发明的小型光机模板上的电路示意图；10 is a schematic circuit diagram of a small optical machine template of the present invention;
图11为本发明的中型光机模板上的电路示意图；Figure 11 is a schematic circuit diagram of a medium-sized optomechanical template of the present invention;
图12为本发明大芯片水平布置的小型光机模组示意图；12 is a schematic diagram of a small optical machine module with a horizontal arrangement of a large chip according to the present invention;
图13为本发明大芯片水平布置的中型光机模组示意图；13 is a schematic view of a medium-sized optical machine module with a horizontal arrangement of a large chip according to the present invention;
图14为本发明大芯片水平布置的大型光机模板上的电路示意图；14 is a schematic circuit diagram of a large-scale optical machine template in which a large chip is horizontally arranged according to the present invention;
图15为本发明大芯片水平布置的大功率的大型光机模板上的电路示意图； 15 is a schematic circuit diagram of a high-power large-scale optical machine template in which a large chip is horizontally arranged according to the present invention;
图16为本发明大芯片水平布置的大型光机模组示意图；16 is a schematic diagram of a large-scale optical machine module with a horizontal arrangement of a large chip according to the present invention;
图17为本发明大芯片水平布置的大功率的大型光机模组示意图；17 is a schematic diagram of a high-power large-scale optical machine module with a horizontal arrangement of a large chip according to the present invention;
图18为本发明过渡电路集成透明块结构示意图；18 is a schematic structural diagram of an integrated transparent block of a transition circuit according to the present invention;
图19为本发明大芯片水平垂直的小型光机模组结构示意图；19 is a schematic structural view of a small-scale optical module of a horizontal chip of a large chip according to the present invention;
图20为本发明大芯片水平垂直的中型光机模组结构示意图；20 is a schematic structural view of a medium-sized optical module of a horizontal chip of a large chip according to the present invention;
图21为本发明大芯片水平垂直的大型光机模板上的电路示意图；21 is a schematic circuit diagram of a large-scale horizontal illuminator template of a large chip of the present invention;
图22为本发明大芯片水平垂直的大型光机模组结构示意图；22 is a schematic structural view of a large-scale horizontal illuminating module of a large chip according to the present invention;
图23为本发明的B型过渡电路集成透明块结构示意图；23 is a schematic structural view of a B-type transition circuit integrated transparent block of the present invention;
图24为本发明的C型过渡电路集成透明块结构示意图；24 is a schematic structural view of a C-type transition circuit integrated transparent block of the present invention;
图25为本发明的D型过渡电路集成透明块结构示意图；25 is a schematic structural view of a D-type transition circuit integrated transparent block of the present invention;
图26为大芯片在非绝缘导热基板上的布置方法示意图；26 is a schematic view showing a layout method of a large chip on a non-insulating heat-conductive substrate;
图27为本发明使用图26所示方法的大型光机模组成品结构示意图；Figure 27 is a schematic view showing the structure of a finished product of a large optomechanical module using the method shown in Figure 26;
图28为本发明使用图26所示方法的大型光机模组结构分解示意图；28 is a schematic exploded view showing the structure of a large optomechanical module using the method shown in FIG. 26 according to the present invention;
图29为本发明使用图26所示方法的以导热支架为基板的灯泡结构示意图；29 is a schematic structural view of a bulb with a heat conducting bracket as a substrate using the method shown in FIG. 26 according to the present invention;
图30为本发明使用图26所示方法的小型光机模组成品结构示意图；Figure 30 is a schematic view showing the structure of a small-sized optical machine module using the method shown in Figure 26;
图31为本发明使用图26所示方法的中型光机模组成品结构示意图；Figure 31 is a schematic view showing the structure of a finished product of a medium-sized optomechanical module using the method shown in Figure 26;
图32为本发明的E型过渡电路集成透明块结构示意图；32 is a schematic structural view of an integrated transparent block of an E-type transition circuit according to the present invention;
图33为本发明的F型过渡电路集成透明块结构示意图；33 is a schematic structural view of an integrated transparent block of an F-type transition circuit according to the present invention;
图34为本发明实施例的LED电压电流波形图；FIG. 34 is a waveform diagram of LED voltage and current according to an embodiment of the present invention; FIG.
图35为本发明实施例的超高电压运行功率波形图；FIG. 35 is a waveform diagram of an ultra high voltage operation power according to an embodiment of the present invention; FIG.
图36本发明实施例的调光运行功率波形图；36 is a waveform diagram of a dimming operation power according to an embodiment of the present invention;
图37本发明实施例的电路连接图；Figure 37 is a circuit connection diagram of an embodiment of the present invention;
图38本发明实施例的驱动电源芯片内部电路图；38 is a circuit diagram of an internal circuit of a driving power supply chip according to an embodiment of the present invention;
图39本发明实施例的LED电压电流波形图；39 is a waveform diagram of LED voltage and current according to an embodiment of the present invention;
图40：本发明实施例DC52V串联的LED芯片阵列模组功率加载分布图；FIG. 40 is a power loading distribution diagram of an LED chip array module in a DC52V series according to an embodiment of the present invention; FIG.
图41：本发明实施例LED芯片阵列承载电压试算图；FIG. 41 is a schematic diagram of voltage carrying of an LED chip array according to an embodiment of the present invention; FIG.
图42：本发明实施例单颗DC52V芯片承载功率试算图；FIG. 42 is a schematic diagram of carrying power of a single DC52V chip according to an embodiment of the present invention; FIG.
图43：本发明实施例2*52V+4*35V串联的LED芯片阵列模组功 率加载分布图；Figure 43: LED chip array module in series 2*52V+4*35V in the embodiment of the present invention Rate loading profile;
图44为本发明实施例印制了银浆电路的光机模板示意图；44 is a schematic view showing a template of a optomechanical printed with a silver paste circuit according to an embodiment of the present invention;
图45本发明实施例LED芯片为正装金线焊结的光机模组图；45 is a diagram of a light module of a gold chip soldering joint of an embodiment of the present invention;
图46为本发明实施例LED芯片为倒装焊结的光机模组图；FIG. 46 is a schematic diagram of a light machine module in which an LED chip is flip-chip bonded according to an embodiment of the present invention; FIG.
图47为本发明实施例封装透明盖板后的光机模组图；47 is a diagram of a optomechanical module after encapsulating a transparent cover according to an embodiment of the present invention;
图48为本发明实施例封胶完成后的光机模组图.Figure 48 is a view of the optomechanical module after the sealing is completed in the embodiment of the present invention.
具体实施方式detailed description
下面结合附图和实施例对本发明作进一步的说明，但并不作为对本发明限制的依据。The invention is further illustrated by the following figures and embodiments, but is not to be construed as limiting the invention.
实施例。LED照明大芯片，如图1至3所示：包括一个宽度固定为W的第一透明基板421，第一透明基板421上设有N+1条平行的接口导线，第一透明基板421上设有N颗LED芯片41构成LED芯片串联组，每颗LED芯片41均位于两条相邻的接口导线之间，两条相邻的接口导线的间距为WJG等于W减接口导线宽再除以N(WJG＝(W-接口导线宽)/N)，且每颗LED芯片41的正负极均分别连接在两条相邻的接口导线上；且同时并联多个LED串联组，使得第一透明基板421上形成可在第一透明基板421长度方向上延伸的N列多行的LED芯片阵列，N为3至7之间的整数。Example. The LED illumination chip, as shown in FIG. 1 to FIG. 3, includes a first transparent substrate 421 having a width W, and the first transparent substrate 421 is provided with N+1 parallel interface wires, and the first transparent substrate 421 is disposed. There are N LED chips 41 to form a series of LED chips, each LED chip 41 is located between two adjacent interface wires, the spacing between two adjacent interface wires is W JG is equal to W minus the width of the interface wire and then divided by N (W JG = (W-interface wire width) / N), and the positive and negative poles of each LED chip 41 are respectively connected to two adjacent interface wires; and simultaneously parallel multiple LED series groups, so that An N-row multi-row LED chip array which can extend in the longitudinal direction of the first transparent substrate 421 is formed on a transparent substrate 421, and N is an integer between 3 and 7.
所述LED芯片阵列和接口导线在第一透明基板421上的形成方法是：采用透明的衬底做过渡外延层形成的薄型外延片，外延片采用成熟芯片制造技术分层生长电路和LED芯片，然后经切割形成宽度为W的LED照明大芯片，其中生长出的电路包括接口导线和连接LED芯片和接口导线的连接芯片的导线，透明基板作为衬底；所述的芯片二极由于不需要焊接，可采用透明电极，如氧化铟锡(ITO)，以增加芯片的发光面积；所述的芯片成熟制造技术是，采用有机金属化学气相沉积设备分层进行覆硅、上胶、光刻、蚀刻、镀膜、合金和磨片等工艺；或者采用传统技术将LED芯片阵列贴装在印制好银浆电路414的第一透明基板421上，并通过倒装焊接或金丝正装焊接与第一透明基板421上的银浆电路414连接，获得LED照明大芯片，银浆刷电路414包括接口导线和连接LED芯片和接口导线的连接芯片的导线。The LED chip array and the interface wire are formed on the first transparent substrate 421 by using a transparent substrate as a thin epitaxial wafer formed by a transition epitaxial layer, and the epitaxial wafer adopts a mature chip manufacturing technology to form a layered growth circuit and an LED chip. And then cutting to form a large LED chip with a width W, wherein the grown circuit comprises an interface wire and a wire connecting the chip of the LED chip and the interface wire, the transparent substrate is used as a substrate; the chip diode does not need to be soldered A transparent electrode, such as indium tin oxide (ITO), may be used to increase the light-emitting area of the chip; the mature manufacturing technology of the chip is a layered silicon, sizing, photolithography, and etching using an organometallic chemical vapor deposition apparatus. , plating, alloying, and grinding, etc.; or conventionally mounting the LED chip array on the first transparent substrate 421 of the printed silver paste circuit 414, and by flip chip bonding or gold wire assembly soldering with the first transparent The silver paste circuit 414 on the substrate 421 is connected to obtain a large LED illumination chip, and the silver paste brush circuit 414 includes an interface wire and a connection between the LED chip and the interface wire. Conductor chip.
LED驱动电源大芯片：包括宽度固定为W的第二透明基板413，第二透明基板413印制有银浆电路，银浆电路上形成有接口导线，接口导线有接入端和输出端；接入端的宽度与光机模板43导线接入端的宽度WG相同或有与电气接插件相连的焊盘；输出端的银浆电路上有 N+1条平行的接口导线，相邻两条接口导线的间距WJG等于W减接口导线宽再除以N(WJG＝(W-接口导线宽)/N)；第二透明基板413上先粘贴未经封装的电源驱动晶圆级芯片411和整流桥晶圆级芯片412，然后将未经封装的电源驱动晶圆级芯片411和整流桥晶圆级芯片412焊接在第二透明基板413上；可将整流桥晶圆级芯片412合并在电源驱动晶圆级芯片411中；第二透明基板413有输出端的接口导线端的宽度与LED照明大芯片的宽度W相同，高度为H2；LED驱动电源大芯片上输出端的接口导线的用途是用来连接所述的LED照明大芯片上的芯片阵列的。LED driving power large chip: comprising a second transparent substrate 413 having a width fixed by W, the second transparent substrate 413 is printed with a silver paste circuit, an interface wire is formed on the silver paste circuit, and the interface wire has an access end and an output end; The width of the inlet end is the same as the width W G of the wire access end of the optomechanical template 43 or has a pad connected to the electrical connector; the silver paste circuit at the output end has N+1 parallel interface wires, and the adjacent two interface wires The pitch W JG is equal to W minus the interface wire width and then divided by N (W JG = (W - interface wire width) / N); the second transparent substrate 413 is pasted with an unpackaged power source to drive the wafer level chip 411 and the rectifier bridge The wafer level chip 412 then solders the unpackaged power source driving wafer level chip 411 and the rectifier bridge wafer level chip 412 on the second transparent substrate 413; the rectifier bridge wafer level chip 412 can be combined in the power driving crystal In the circular chip 411; the width of the interface wire end of the second transparent substrate 413 having the output end is the same as the width W of the LED illumination chip, and the height is H2; the purpose of the interface wire on the output end of the LED driving power chip is to connect the LED lighting core Array on the chip.
其典型尺寸为L＝12.4mm，h2＝8mm(大型)或L＝12.4mm，h2＝9.7mm(中、小型)，总厚度小于1mm，参见图4和图5。为防止氧化和损伤晶圆级芯片，在晶圆级芯片表面局部点胶保护。Its typical size is L = 12.4 mm, h2 = 8 mm (large) or L = 12.4 mm, h2 = 9.7 mm (medium and small), and the total thickness is less than 1 mm, see Figures 4 and 5. To prevent oxidation and damage to the wafer level chip, localized dot protection on the wafer level chip surface.
LED驱动电源大芯片410具有与LED照明大芯片420中输入路相同的宽度W和接口导线间距WJG；宽度W和接口导线间距WJG是不同厂家的LED照明大芯片420与不同厂家的LED驱动电源大芯片410之间的通用连接接口。输出电路的宽度W为LED串联长度*接口导线间距WJG+导线宽度。The LED driving power large chip 410 has the same width W and interface wire spacing W JG as the input path of the LED lighting large chip 420; the width W and the interface wire spacing W JG are LED lighting large chips 420 of different manufacturers and LED drivers of different manufacturers A universal connection interface between the power large chips 410. The width W of the output circuit is the LED series length * interface wire pitch W JG + wire width.
由于LED驱动电源大芯片410能直接采用市电供电，采用LED驱动电源大芯片410构建的光机模组4具有体积小、超薄和整体透明的特点，参见图4和图5。Since the LED driving power large chip 410 can directly use the commercial power supply, the optical module 4 constructed by using the LED driving power large chip 410 has the characteristics of small size, ultra-thin and overall transparency, see FIG. 4 and FIG.
为了LED电源驱动芯片411提供一个更稳定的工作电源，可在LED驱动电源大芯片410背部设置了电阻416，便于调节内部参考电压，参见图6。In order to provide a more stable working power for the LED power driving chip 411, a resistor 416 can be disposed on the back of the LED driving power large chip 410 to facilitate adjustment of the internal reference voltage, see FIG.
使用前述的LED照明大芯片组建的LED光机模组，如图7至9所示，它是按以下方法组建的：根据功率需要，对LED照明大芯片420进行剪裁，剪裁成不同长度的LED照明大芯片420具有不同的功率，在光机模板43上印刷银浆电路414，光机模板43上银浆电路414也具有接口导线，且数目和间距均与LED照明大芯片420的接口导线相同；将LED照明大芯片420带芯片的一面贴在光机模板43带银浆电路414的一面进行对焊，两者的接口导线相互对应焊接；同时将LED驱动电源大芯片410带银浆电路的一面贴在光机模板43带银浆电路414的一面进行对焊；从而将LED照明大芯片420与LED驱动电源大芯片410接通；最后用透明胶封装LED照明大芯片和驱动电源大芯片周围的缝隙。所述的LED芯片承载电压为～DC3.2V或大于DC10V 的高电压。The LED light machine module formed by using the aforementioned LED lighting large chip, as shown in FIGS. 7 to 9, is formed by the following method: according to the power requirement, the LED lighting large chip 420 is cut and cut into LEDs of different lengths. The illumination chip 420 has different powers, and the silver paste circuit 414 is printed on the optomechanical template 43, and the silver paste circuit 414 on the optomechanical template 43 also has interface wires, and the number and spacing are the same as those of the LED illumination chip 420. The side of the LED illumination chip 420 with the chip is attached to the side of the optomechanical template 43 with the silver paste circuit 414 for butt welding, and the interface wires of the two are soldered correspondingly; at the same time, the LED drive power chip 410 with the silver paste circuit One side is attached to the side of the optomechanical template 43 with the silver paste circuit 414 for butt welding; thereby, the LED illumination large chip 420 is connected to the LED driving power large chip 410; finally, the transparent LED is used to package the LED illumination large chip and the driving power supply around the large chip. The gap. The LED chip carrying voltage is ~DC3.2V or greater than DC10V High voltage.
大芯片水平布置的LED光机模组，包括印有银浆电路414的透明的光机模板43，银浆电路414在光机模板43上形成有接口导线，其接口导线的宽度和间距与LED照明大芯片420和LED驱动电源大芯片410的宽度W和间距WJG相同；对于大型光机模组中功率较大的，或还需通过过渡电路集成透明块430将光机模板43与1个以上的LED驱动电源大芯片410连接；再将LED驱动电源大芯片410和LED照明大芯片420带银浆电路414的一面透明光机模板43带银浆电路414的一面按接口导线对焊得LED光机模组。The large-chip horizontally arranged LED light machine module comprises a transparent light machine template 43 printed with a silver paste circuit 414. The silver paste circuit 414 forms an interface wire on the light machine template 43, the width and spacing of the interface wires and the LED The width W and the width W JG of the large LED chip 420 and the LED driving power chip 410 are the same; for a large power module, or a transition circuit integrated transparent block 430, the optical template 43 and one are required. The above LED driving power large chip 410 is connected; then the LED driving power large chip 410 and the LED lighting large chip 420 with a silver paste circuit 414 on one side of the transparent optical template 43 with the silver paste circuit 414 are soldered to the LED by the interface wire. Light machine module.
对于中、小型的LED光机模组(光机模板分别如图11和图10所示)，外部电源或信号直接通过接插件11从焊接在光机模板43上的LED驱动电源大芯片410上接入，如图12和图13所示；对于大型的LED光机模组，光机模板43如图14所示，光机模板43上上还焊接有柔性电路44，外部电源或信号通过接插件11连接柔性电路44接入到焊接在光机模板43上的LED驱动电源大芯片410上；对于大型LED光机模组中功率较大的，光机模板43如图15所示，光机模板43上焊接有一个及以上的LED驱动电源大芯片410和一个及以上的LED照明大芯片420，如图16和图17所示；最后沿LED驱动电源大芯片410、LED照明大芯片420和或过渡电路集成透明块430周边封透明胶45得LED光机模组。For medium and small LED illuminator modules (the optomechanical templates are shown in Figures 11 and 10, respectively), an external power source or signal is directly passed through the connector 11 from the LED driving power supply large chip 410 soldered on the optomechanical template 43. Accessing, as shown in FIG. 12 and FIG. 13; for a large-scale LED optical module, the optical template 43 is as shown in FIG. 14, and the optical template 43 is also soldered with a flexible circuit 44, and an external power source or signal is connected. The plug-in 11 is connected to the flexible circuit 44 to be connected to the LED driving power large chip 410 soldered on the optomechanical template 43; for the larger power of the large LED illuminating module, the optomechanical template 43 is as shown in FIG. One or more LED driving power large chips 410 and one or more LED lighting large chips 420 are soldered on the template 43, as shown in FIG. 16 and FIG. 17; finally, the LED driving power large chip 410, the LED lighting large chip 420 and Or the transition circuit integrated transparent block 430 is sealed with a transparent glue 45 to obtain an LED light machine module.
所述的透明过渡电路集成透明块430图18所示，包括第三透明基板431，第三透明基板431上印刷有银浆电路414，银浆电路414有接口导线，接口导线有1组接入端和1组以上的输出端；接入端的宽度与光机模板43导线接入端的宽度WG相同；输出端的接口导线与LED驱动电源大芯片410的接入端宽度WG相同；将过渡电路集成透明块430上印刷有银浆电路414的一面与光机模板43的带银浆电路414的一面按接口导线对焊；过渡电路集成透明块430用于将外部电源或信号接入一个及以上的LED驱动电源大芯片410，再通过LED驱动电源大芯片410输出到LED照明大芯片420上。解决了由于LED光机模组的电路要求，要使外部电源或信号接入LED驱动电源大芯片410或LED驱动电源大芯片输出到LED照明大芯片420的电路需涉及到光机模板上双面的印刷电路方能实现，由于一般情况下光机模板的背部将紧贴散热器使用，而散热器大多由金属制成，光机模板的背部需要绝缘，无法实现双面印刷电路的问题。本发明的过渡电路集成透明块包 含1种过渡电路集成透明块：A型：外部电源和信号分别接入到双LED驱动电源大芯片410上，参见图18，其中外部导线接入的宽度为WG；LED驱动电源大芯片410导线接入宽度为WG。其总宽度为2*W+1mm、高度为H2；典型尺寸为：宽度25.8mm、高度：H2＝6mm。The transparent transition circuit integrated transparent block 430 is shown in FIG. 18, and includes a third transparent substrate 431. The third transparent substrate 431 is printed with a silver paste circuit 414. The silver paste circuit 414 has an interface wire, and the interface wire has one set of access. end and at least one group of output terminals; same access end 43 of the wire access points the width of the ray pattern width W G; the output of the interface wires to the LED driver access terminal power large chip 410 width W G the same; transition circuit One side of the integrated transparent block 430 printed with the silver paste circuit 414 is butt welded to the side of the optical template 43 with the silver paste circuit 414 by an interface wire; the transition circuit integrated transparent block 430 is used to connect an external power supply or signal to one or more The LED driving power large chip 410 is output to the LED lighting large chip 420 through the LED driving power large chip 410. Solved the circuit requirements of the LED light machine module, to make the external power supply or signal into the LED drive power large chip 410 or the LED drive power large chip output to the LED lighting large chip 420 circuit needs to involve the optical machine template on both sides The printed circuit can be realized. Generally, the back of the optomechanical template will be used close to the heat sink, and the heat sink is mostly made of metal. The back of the optomechanical template needs to be insulated, and the problem of the double-sided printed circuit cannot be realized. The transition circuit integrated transparent block of the present invention comprises a transition circuit integrated transparent block: Type A: the external power supply and the signal are respectively connected to the dual LED driving power large chip 410, see FIG. 18, wherein the width of the external wire access is W. G ; LED drive power large chip 410 wire access width is W G . Its total width is 2*W+1mm and height is H2; typical dimensions are: width 25.8mm, height: H2=6mm.
大芯片垂直布置的LED光机模组，包括印有银浆电路的透明的光机模板43，银浆电路在光机模板43上形成有接口导线，其接口导线的宽度和间距与LED照明大芯片420及LED驱动电源大芯片410的宽度W和间距WJG相同；通过1个及以上的呈L状的D型透明过渡电路集成透明块460将LED照明大芯片420垂直于光机模板43连接到光机模板43上；或对于大型光机模板，通过B型透明过渡电路集成透明块(440)将LED驱动电源大芯片410与1个及以上的呈L状的C型透明过渡电路集成透明块450将1个及以上LED照明大芯片420垂直于光机模板43连接到光机模板43上；再将LED驱动电源大芯片410带银浆电路的一面与透明光机模板43带银浆电路的一面按接口导线对焊得A品。The LED light machine module vertically arranged on the large chip comprises a transparent light machine template 43 printed with a silver paste circuit, and the silver paste circuit forms an interface wire on the light machine template 43, the width and spacing of the interface wires and the LED illumination are large. The width W and the pitch W JG of the chip 420 and the LED driving power large chip 410 are the same; the LED lighting large chip 420 is connected to the optical template 43 by one or more L-shaped transparent transition circuit integrated transparent blocks 460. On the templating template 43; or for the large optomechanical template, the LED driving power large chip 410 is integrated with one or more L-shaped C-type transparent transition circuits through the B-type transparent transition circuit integrated transparent block (440). Block 450 connects one or more LED lighting large chips 420 perpendicular to the optical template 43 to the optical template 43; and then the LED driving power large chip 410 with the silver paste circuit side and the transparent optical template 43 with the silver paste circuit One side is welded to the product by the interface wire.
对于中、小型的LED光机模组，如图19、图20所示，外部电源或信号直接通过接插件11从焊接在光机模板43上的LED驱动电源大芯片410上接入；对于大型的LED光机模组，如图21和图22所示，光机模板43上还焊接有柔性电路44，外部电源或信号通过接插件11连接柔性电路44接入到焊接在光机模板43上的LED驱动电源大芯片410上；最后沿LED驱动电源大芯片410、LED照明大芯片420和B型透明过渡电路集成透明块440、C型透明过渡电路集成透明块450或D型透明过渡电路集成透明块460周边封透明胶45得LED光机模组。For the small and medium-sized LED illuminator modules, as shown in FIG. 19 and FIG. 20, the external power source or signal is directly connected through the connector 11 from the LED driving power large chip 410 soldered on the optomechanical template 43; As shown in FIG. 21 and FIG. 22, the optical template 43 is also soldered with a flexible circuit 44. The external power supply or signal is connected to the flexible circuit 44 through the connector 11 for soldering to the optical template 43. LED driver power supply on the large chip 410; finally along the LED drive power large chip 410, LED lighting large chip 420 and B-type transparent transition circuit integrated transparent block 440, C-type transparent transition circuit integrated transparent block 450 or D-type transparent transition circuit integration The transparent block 460 is sealed with a transparent glue 45 to obtain an LED light machine module.
所述的D型透明过渡电路集成透明块460，如图25所示，包括L型的透明基板，透明基板上印刷有银浆电路，银浆电路为L型的接口导线，其接口导线的宽度、数量和间距与LED照明大芯片420及LED驱动电源大芯片410的宽度W、数量N+1和间距WJG相同；所述的C型透明过渡电路集成透明块450如图24所示，包括L型的透明基板，透明基板上印刷有银浆电路，银浆电路为空间上呈L型的2组接口导线，每1组的接口导线的宽度、数量和间距与LED照明大芯片420和LED驱动电源大芯片410的宽度W、数量N+1和间距WJG相同；所述的LED照明大芯片420带银浆电路的一面与呈L型的透明过渡电路集成透明块带银浆电路的一面按接口导线对焊；L型的透明过渡电路集成 透明块的带银浆电路另一面与光机模板43的带银浆电路的一面按接口导线对焊；所述的B型透明过渡电路集成透明块440如图23所示，它的接口导线有1组接入端和1组以上的输出端，其接口导线的宽度、数量和间距与LED驱动电源大芯片410的宽度W、数量N+1和间距WJG相同。图中B、C和D型透明过渡电路集成透明块中的透明基板也标记为413。The D-type transparent transition circuit integrates a transparent block 460, as shown in FIG. 25, comprising an L-shaped transparent substrate, a silver paste circuit printed on the transparent substrate, an L-shaped interface wire, and a width of the interface wire. The number and the spacing are the same as the width W, the number N+1 and the spacing W JG of the LED lighting large chip 420 and the LED driving power large chip 410; the C-type transparent transition circuit integrated transparent block 450 is as shown in FIG. 24, including L-shaped transparent substrate, printed on the transparent substrate with a silver paste circuit, the silver paste circuit is a spatially L-shaped two sets of interface wires, the width, number and spacing of each set of interface wires and the LED illumination large chip 420 and LED The width W, the number N+1 of the driving power large chip 410 and the spacing W JG are the same; the side of the LED lighting large chip 420 with the silver paste circuit and the transparent transition circuit of the L-type integrated transparent block with the silver paste circuit side Butt welding according to interface wire; L-shaped transparent transition circuit integrated with transparent block with silver paste circuit on the other side and the side of the optical template 43 with the silver paste circuit are butt welded according to the interface wire; the B-type transparent transition circuit is transparent Block 440 is shown in Figure 23, which Interface wires 1 and at least one set of access terminal sets the output terminal, the width, number and spacing of the LED drive interface wires which supply a large width W of the chip 410, N + the number 1 and the same pitch W JG. The transparent substrate in the integrated transparent block of Types B, C and D transparent transition circuits is also labeled 413.
大芯片在非绝缘导热基板上的布置方法，包括非绝缘导热基板，E型透明过渡电路集成透明块470背对银浆电路的一面紧密贴合非绝缘导热基板布置；将LED驱动电源大芯片410带接口导线电路的一面贴合在E型透明过渡电路集成透明块470带银浆电路的一面进行对焊；LED照明大芯片420背对银浆电路的一面紧密贴合非绝缘导热基板布置，其接口导线端与E型透明过渡电路集成透明块470输出端接口导线端对齐；所述的LED照明大芯片420带芯片的一面还设有F型透明过渡电路集成透明块480，如图26和图28所示；所述的F型透明过渡电路集成透明块480带银浆电路面的一端与LED照明大芯片420带银浆电路的一面按接口导线进行对焊，另一端再与E型透明过渡电路集成透明块470带银浆电路的一面按接口导线进行对焊得A品。A method for arranging a large chip on a non-insulating heat-conducting substrate, comprising a non-insulating heat-conducting substrate, an E-type transparent transition circuit integrated transparent block 470 facing away from the side of the silver paste circuit and closely aligning with the non-insulating heat-conductive substrate; and the LED driving power large chip 410 One side of the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block 470 with the silver paste circuit for butt welding; the side of the LED illumination large chip 420 facing the silver paste circuit closely fits the non-insulated thermal conductive substrate arrangement, The interface wire end is aligned with the E-type transparent transition circuit integrated transparent block 470 output end interface wire end; the LED illumination large chip 420 with the chip side also has an F-type transparent transition circuit integrated transparent block 480, as shown in FIG. 26 and 28; the F-type transparent transition circuit integrates one end of the transparent block 480 with the silver paste circuit surface and the side of the LED illumination large chip 420 with the silver paste circuit is butt welded according to the interface wire, and the other end is further transparent with the E-type transition The side of the circuit integrated transparent block 470 with the silver paste circuit is butt welded to the product by the interface wire.
非绝缘导热基板为金属或非金属导热材料制作，与LED照明大芯片420贴合面为镜面；所述的非绝缘导热基板可以采用光机模板43的型式；或灯泡的导热支架3的型式，如图29所示，是本发明的方法将大芯片直接在导热支架上布置的灯泡结构示意图；或其他似散热器的型式，如图49所示；对于采用中、小型的LED光机模板43，外部电源或信号直接通过接插件11焊接在贴合于光机模板43上的LED驱动电源大芯片410上接入，如图30和图31所示；对于采用大型的LED光机模组，外部电源或信号通过接插件11连接柔性电路44接入到透明过渡电路集成透明块470上再导入LED驱动电源大芯片410，如图27所示；所述的LED驱动电源大芯片410或可设置透明盖板410.1；所述的A品沿LED驱动电源大芯片410、LED照明大芯片420、E型透明过渡电路集成透明块470和F型透明过渡电路集成透明块480周边封透明胶45完成大芯片非绝缘导热基板布置。The non-insulating heat-conducting substrate is made of a metal or non-metal heat-conducting material, and the surface of the LED-illuminated large chip 420 is a mirror surface; the non-insulating heat-conducting substrate may be of a type of the light machine template 43; or the type of the heat-conducting bracket 3 of the light bulb, As shown in FIG. 29, it is a schematic diagram of the structure of the bulb in which the large chip is directly arranged on the heat conducting bracket according to the method of the present invention; or other heat sink-like type, as shown in FIG. 49; for the medium and small LED light machine template 43 The external power supply or signal is directly connected to the LED driving power large chip 410 attached to the optical template 43 through the connector 11 as shown in FIG. 30 and FIG. 31; for the large-sized LED optical module, The external power supply or signal is connected to the transparent transition circuit integrated transparent block 470 through the connector 11 and connected to the transparent circuit 470, and then introduced into the LED driving power large chip 410, as shown in FIG. 27; the LED driving power large chip 410 can be set Transparent cover 410.1; the A product along the LED drive power large chip 410, LED illumination large chip 420, E-type transparent transition circuit integrated transparent block 470 and F-type transparent transition circuit integrated transparent block 480 peripheral seal transparent The glue 45 completes the arrangement of the large chip non-insulated thermally conductive substrate.
所述的E型透明过渡电路集成透明块470包括第三透明基板470.1，第三透明基板470.1上印刷有银浆电路，银浆电路为接口导线，接口导线有接入端和输出端。接入端接口导线的宽度与柔性电路接入端的宽度WG1相同或有与电气接插件11相连的焊盘414.1，输出 端的接口导线的宽度、数量和间距与LED照明大芯片420的宽度W、数量N+1和间距WJG相同，接口导线或还与LED驱动电源大芯片410的输入端连接，其宽度为WG，如图32所示；所述的F型透明过渡电路集成透明块480包括第四透明基板480.1，第四透明基板上480.1印刷有银浆电路，银浆电路为接口导线，接口导线的宽度、数量和间距与LED照明大芯片420的宽度W、数量N+1和间距WJG相同，如图33所示。采用透明过渡电路集成透明块解决了外部电源或信号接入LED驱动电源大芯片410或LED驱动电源大芯片输出到LED照明大芯片420的电路连接问题。本发明的过渡电路集成透明块包含2种过渡电路集成透明块：①E型：外部电源和信号分别接入到LED驱动电源大芯片410上，如图26和图32，其中柔性电路44接入的宽度为WG1；LED驱动电源大芯片410导线接入宽度为WG、高度为H7；典型尺寸为：宽度12.4mm、高度：H7＝11.4mm。②F型：LED驱动电源大芯片410输出到LED照明大芯片420上，参见图33，其中LED驱动电源大芯片410导线输出宽度为W、导线间隔为WJG、高度为H8；典型尺寸为：宽度12.4mm、高度：H8由LED照明大芯片420的功率决定。The E-type transparent transition circuit integrated transparent block 470 includes a third transparent substrate 470.1. The third transparent substrate 470.1 is printed with a silver paste circuit, the silver paste circuit is an interface wire, and the interface wire has an access end and an output end. The width of the access terminal wire is the same as the width W G1 of the flexible circuit access end or the pad 414.1 connected to the electrical connector 11, the width, the number and the spacing of the interface wires at the output end and the width W of the LED illumination chip 420, The number N+1 is the same as the pitch W JG , and the interface wire is also connected to the input end of the LED driving power large chip 410, and its width is W G , as shown in FIG. 32; the F-type transparent transition circuit integrates the transparent block 480 The fourth transparent substrate 480.1 is included. The fourth transparent substrate is printed with a silver paste circuit on the 480.1, the silver paste circuit is an interface wire, the width, the number and the spacing of the interface wires and the width W, the number N+1 and the spacing of the LED illumination large chip 420. W JG is the same, as shown in Figure 33. The transparent transition circuit is integrated with the transparent block to solve the circuit connection problem of the external power source or the signal input LED driving power large chip 410 or the LED driving power large chip output to the LED lighting large chip 420. The transition circuit integrated transparent block of the present invention comprises two kinds of transition circuit integrated transparent blocks: Type 1E: external power source and signal are respectively connected to the LED driving power large chip 410, as shown in FIG. 26 and FIG. 32, wherein the flexible circuit 44 is connected. The width is W G1 ; the LED driving power large chip 410 wire has a width of W G and a height of H7; the typical size is: width 12.4 mm, height: H7 = 11.4 mm. 2F type: LED driving power large chip 410 output to LED lighting large chip 420, see Fig. 33, wherein LED driving power large chip 410 wire output width is W, wire spacing is W JG , height is H8; typical size is: width 12.4 mm, height: H8 is determined by the power of the LED illumination large chip 420.
所述的其他似散热器型式的非绝缘导热基板，如图49所示，包含散热器103，散热器103上设有内卡环81和内罩61的固定槽，内卡环81和内罩61的固定槽粘接固定在固定槽中，内卡环81由螺钉12二次固定；所述的带荧光粉的内罩61或可用在LED照明大芯片410表面设置带荧光粉的透明胶的方案替代；或可设置内环罩62粘接在内卡环81和内罩61之间；透镜7粘接固定在内卡环81上，并通过透镜卡环8二次固定，透镜卡环8由卡环固定螺钉14固定在内卡环81上；所述的散热器上还设有接插件11，柔性电路44与接插件11和透明过渡电路集成透明块470连接。带电缆的接插件母头10由电缆固定架112固定，并与接插件公头11连接。The other non-insulated heat-conducting substrate of the heat sink type, as shown in FIG. 49, includes a heat sink 103. The heat sink 103 is provided with a fixing groove of the inner snap ring 81 and the inner cover 61, the inner snap ring 81 and the inner cover. The fixing groove of the 61 is fixedly fixed in the fixing groove, and the inner snap ring 81 is secondarily fixed by the screw 12; the inner cover 61 with the phosphor or the transparent plastic with phosphor powder disposed on the surface of the LED illumination large chip 410 Alternatively, the inner ring cover 62 may be disposed between the inner snap ring 81 and the inner cover 61; the lens 7 is adhesively fixed to the inner snap ring 81, and is fixed by the lens retaining ring 8 twice, and the lens retaining ring 8 is attached. The inner ring 63 is fixed by a snap ring fixing screw 14; the heat sink 44 is further connected with the connector 11 and the transparent transition circuit integrated transparent block 470. The connector female connector 10 with a cable is fixed by a cable holder 112 and connected to the connector male end 11.
LED驱动方法：市电AC通过整流桥转化为脉动直流电，脉动直流电的电压大于零，小于等于脉动直流电额定最大工作电压VWR，在脉动直流电上设置3～7段LED负载，各段LED负载间形成串联方式，在脉动直流电的电压升高时，LED负载串联的段数逐级增加，在脉动直流电的电压下降时，LED负载串联的段数逐级减小，LED负载串联的段数为实际连入脉动直流电的LED负载段数。所述LED负载串联的段通过开关进行控制，开关的控制节点为电压的分段界限，所述电压的分段数量与LED负载的段数相对应。将每段LED负载的负极方向分 别通过开关连接脉动直流电的负极，然后根据脉动直流电的电压变化对各个开关的通断进行控制，使用将某几段LED负载断路的方式实现LED负载串联的段数的改变。设定整脉动直流电的脉动直流工作电压VW大于VWmax的时段，控制所有开关断开，停止向所有LED负载供电，然后通过外部设置一给定电压VT来调整脉动直流电的最大允许脉动直流电压VWmax的大小，从而实现对LED的调光；并且可以用相同的方式实现LED的电压保护。所述的开关在脉动直流电压上升阶段延时tm(如tm＝0.1ms)毫秒动作；在脉动直流电压下降阶段提前tm(如tm＝0.1ms)毫秒动作；以获得相对较平稳的LED工作电流。通过设置电流传感器测得电路中有效工作电流IW，当IW超过设计值KIWR时，关闭所有开关以实现电流保护，开关的开启需在下次重新加载电压后恢复，其中K为调整系数，IWR为额定有效工作电流；设置2组带驱动和LED负载的完整电路同时一起工作，其中：1组LED负载具有较高的色温，当所述的给定电压VT值趋于低时，所述的最大允许脉动直流电压VWmax趋于高值；而另1组LED负载具有较低的色温，当所述的给定电压VT值趋于低时，所述的最大允许脉动直流电压VWmax趋于低值。调节所述的给定电压VT值可实现LED照明色温的调整；设置串联在一起的每一段LED负载为具有不同的最大承载电压值的LED芯片组；其中，在LED负载串联的段数较高时才进入工作状态的LED负载设置为具有相对较低的最大承载电压值的LED芯片组，从而解决了LED芯片利用率低的缺点。所述每一段LED负载最大承载电压的调整方关键在于计算出串联段组总的最大承载电压值：①以脉动直流电压为纵坐标、脉动直流周期(180度)为横坐标作图；②由于LED电压增加电流大增，实质为功率性损坏。假定一个纯电阻负载，其功率在脉动直流半波形成的正弦图形面积为1，作图(参见图41)；③设定LED负载串联段组的承载功率为纯电阻负载的120％，作一面积为1.2的矩形阴影图，矩形阴影的纵坐标值即为串联段组总的最大承载电压值；④同理，已知LED芯片组承载电压情况下，可作图得出芯片组的图形面积，(参见图42)，逐段验证芯片组的面积之和大于开关的控制节点下的脉动直流正弦波面积；⑤按商品来选取串联段组上芯片组的承载电压值，相加大于等于串联段组总的最大承载电压值即可；其中，承载电压值较高的LED芯片组靠近正极端(始段)，承载电压值较低的LED芯片组靠近负极端(末段)。LED driving method: The mains AC is converted into pulsating direct current through the rectifier bridge. The voltage of the pulsating direct current is greater than zero, less than or equal to the rated maximum working voltage V WR of the pulsating direct current, and the 3 to 7 segment LED load is set on the pulsating direct current. In the series mode, when the voltage of the pulsating direct current increases, the number of segments of the LED load connected in series increases step by step. When the voltage of the pulsating direct current decreases, the number of segments of the LED load connected in series decreases step by step, and the number of segments of the LED load connected in series is the actual connected pulsation. The number of DC LED load segments. The segment in which the LED load is connected in series is controlled by a switch, and the control node of the switch is a segmentation limit of the voltage, and the number of segments of the voltage corresponds to the number of segments of the LED load. The negative direction of each segment of the LED load is respectively connected to the negative pole of the pulsating direct current through a switch, and then the on/off of each switch is controlled according to the voltage change of the pulsating direct current, and the number of segments of the LED load connected in series is determined by disconnecting some segments of the LED load. change. Set the period of the pulsating DC working voltage V W of the whole pulsating direct current to be greater than V Wmax , control all switches to open, stop supplying power to all LED loads, and then adjust the maximum allowable pulsating DC of the pulsating DC by externally setting a given voltage V T The magnitude of the voltage V Wmax , thereby enabling dimming of the LEDs; and the voltage protection of the LEDs can be achieved in the same way. The switch operates in a pulsating DC voltage rise phase delay time t m (eg, t m =0.1 ms) milliseconds; in the pulsating DC voltage drop phase, an advance t m (eg, t m =0.1 ms) milliseconds; to obtain a relatively stable LED operating current. By setting the current sensor to measure the effective working current I W in the circuit, when I W exceeds the design value KI WR , all switches are turned off to achieve current protection, and the opening of the switch needs to be restored after the next reloading voltage, where K is the adjustment factor. I WR is the rated effective working current; two sets of complete circuits with drive and LED load are set to work together at the same time, wherein: 1 set of LED loads have a higher color temperature, when the given voltage V T value tends to be low, The maximum allowable pulsating DC voltage V Wmax tends to a high value; and the other set of LED loads have a lower color temperature, and the maximum allowable pulsating DC voltage when the given voltage V T value tends to be low V Wmax tends to be low. Adjusting the given voltage V T value can realize the adjustment of the LED illumination color temperature; setting each segment of the LED load connected in series to be an LED chip set having different maximum carrying voltage values; wherein the number of segments connected in series with the LED load is higher The LED load that enters the active state is set to an LED chipset having a relatively low maximum carrying voltage value, thereby solving the disadvantage of low utilization of the LED chip. The key to the adjustment of the maximum load voltage of each segment of the LED load is to calculate the total maximum load voltage value of the series segment group: 1 with the pulsating DC voltage as the ordinate and the pulsating DC period (180 degrees) as the abscissa; The LED voltage increases the current greatly, which is essentially power damage. Assuming a purely resistive load, the power of the sinusoidal pattern formed by the pulsating DC half-wave is 1 (Fig. 41); 3 is set to 120% of the load-carrying power of the LED load series segment. A rectangular shadow map with an area of 1.2, the ordinate value of the rectangular shadow is the total maximum carrying voltage value of the series segment group; 4 Similarly, when the LED chipset is known to bear the voltage, the graphic area of the chipset can be obtained by drawing (See Figure 42), verify that the sum of the area of the chipset is greater than the pulsating DC sine wave area under the control node of the switch; 5 select the load voltage value of the chipset on the serial segment group by commodity, add up to or greater than the serial The total maximum carrying voltage value of the segment group may be; wherein the LED chip set with a higher carrying voltage value is close to the positive terminal (the initial segment), and the LED chip group with a lower carrying voltage value is close to the negative terminal (the last segment).
实现前方法的LED照明电路：包括输入端连接市电的整流桥B1， 整流桥B1的输出端的正极连接在多段串接的LED负载的正极，每段LED负载的负极均分别连接在驱动电源芯片U1的连接节点J1、J2…Jn上，整流桥B1的输出端的负极连接在驱动电源芯片U1的接地端GND,所述驱动电源芯片U1上还设有连接在所有LED负载的最前端的工作电压检测端VW,所述驱动电源芯片U1上还设有最大允许脉动直流电压调节端VWmax。所述驱动电源芯片U1包括电压检测及逻辑开关控制器U2、电压检测及逻辑开关控制器U2上设有工作电压检测端VW和最大允许脉动直流电压调节端VWmax；还包括连接节点J1、J2…Jn，每个连接节点J1、J2…Jn均分别通过开关管K1、K2…Kn连接至接地端GND,且每个开关管K1、K2…Kn的控制端均连接在电压检测及逻辑开关控制器U2上。所述每个连接节点J1、J2…Jn均分别通过开关管K1、K2…Kn连接在同一条合并连接线上，再通过合并连接线连接到接地端GND，合并连接线上设有电流检测电路，电流检测电路的输出端连接在电压检测及逻辑开关控制器U2上。Achieve the first method of the LED lighting circuit: LED load anode of a rectifier bridge B input connected to the mains 1, positive output terminal of the rectifier bridge B 1 is connected to the multi-stage connected in series, each negative electrode of the LED load are respectively connected to the drive power chip connection node U 1 J 1, J 2 ... on the J n, the negative output of the rectifier bridge B 1 is connected to the driving power chip U ground terminal GND 1, the driving power chip 1 is also provided on the U coupled All the operating voltage of the LED load detecting foremost end V W, the driving power chip 1 is also provided on the U the maximum allowable pulsating DC voltage regulator terminal V Wmax. The driving power supply chip U 1 includes a voltage detection and logic switch controller U 2 , a voltage detection and logic switch controller U 2 is provided with an operating voltage detecting terminal V W and a maximum allowable ripple DC voltage regulating terminal V Wmax ; Nodes J 1 , J 2 ... J n , each of the connection nodes J 1 , J 2 ... J n are respectively connected to the ground GND through the switch tubes K 1 , K 2 ... K n , and each of the switch tubes K 1 , K The control terminals of 2 ... K n are connected to the voltage detection and logic switch controller U 2 . Each of the connection nodes J 1 , J 2 ... J n are respectively connected to the same merged connection line through the switch tubes K 1 , K 2 ... K n , and then connected to the ground GND through the merged connection line, and merge the connection lines A current detecting circuit is disposed thereon, and an output end of the current detecting circuit is connected to the voltage detecting and logic switch controller U 2 .
下文是以6组LED负载为例的本发明的工作原理。即n取值为6。The following is an operation principle of the present invention taking 6 sets of LED loads as an example. That is, n takes a value of 6.
首先，交流电AC经过整流桥后变成脉动直流电，例：AC220V，50Hz交流电经整流桥整流后，参见图34，电压为半个周期(180度)的波形曲线，周期在0度时脉动直流电压为零，在90度时脉动直流电压达到最大值VWR为最高DC311V，180度时，电压又降为零，周而复始。First, the AC AC turns into a pulsating DC after passing through the rectifier bridge. For example: AC220V, 50Hz AC is rectified by the rectifier bridge, see Figure 34, the voltage is half a cycle (180 degrees), and the pulsating DC voltage is 0°. Zero, at 90 degrees, the pulsating DC voltage reaches the maximum value. V WR is the highest DC 311V. At 180 degrees, the voltage drops to zero again and again.
在脉动直流电压大于零与小于等于VWR之间，共设置6段负载，各段负载间形成串联方式，随电压升高，负载(即LED负载)串联段数逐级增加，负载电压由开关控制加载，参见图34和图37，电压开关节点为电压分段界限。Between the pulsating DC voltage greater than zero and less than or equal to V WR , a total of 6 segments of load are set, and a series connection is formed between the segments. As the voltage increases, the number of series (ie, LED load) series increases step by step, and the load voltage is controlled by the switch. Load, see Figure 34 and Figure 37, the voltage switch node is the voltage segmentation limit.
供电管理运行模式：本发明不设计电流控制器件，各级开关的启闭仅取决于VW的变化，参见图34、图37和图38。Power Management Operation Mode: The present invention does not design a current control device. The opening and closing of each level of switches depends only on the variation of V W , see Figures 34, 37 and 38.
周期0～90度时：When the period is 0 to 90 degrees:
第1段：工作初始状态，即周期从0起始，电路中开关K1～K6处于开启状态(ON)，电流主要经节点J1通过开关K1形成通路，负载由额定电压为1VWR/6串联工作的LED组成；Paragraph 1: the initial working state, ie, the period from the start 0, the switching circuit K 1 ~ K 6 is on (the ON), the main current path through the node formed by the switch J 1 K 1, the rated voltage of the load 1V WR /6 LED working in series;
第2段：当VW大于等于1VWR/6时，开关K1关闭(OFF)，电流主要经节点J2通过开关K2形成通路，负载由额定电压为2VWR/6串联工作的LED组成；Paragraph 2: When V W is greater than or equal to 1V WR /6, switch K1 is turned off (OFF), the current mainly forms a path through node J2 through switch K2, and the load is composed of LEDs with rated voltage of 2V WR /6 in series;
第3段：当VW大于等于2VWR/6时，开关K1处于OFF，开关K2 关闭(OFF)，电流主要经节点J3通过开关K3形成通路，负载由额定电压为3VWR/6串联工作的LED组成；Paragraph 3: When V W is greater than or equal to 2V WR /6, switch K1 is OFF, switch K2 is OFF (OFF), current is mainly formed through node J3 through switch K3, and the load is operated in series by rated voltage of 3V WR /6. LED composition;
第4段：当VW大于等于3VWR/6时，开关K1～K2处于OFF，开关K3关闭(OFF)，电流主要经节点J4通过开关K4形成通路，负载由额定电压为4VWR/6串联工作的LED组成；Section 4: When V W is greater than or equal to 3V WR /6, switches K1 ~ K2 are OFF, switch K3 is OFF (OFF), current is mainly formed through node J4 through switch K4, the load is connected by the rated voltage of 4V WR /6 series Working LED composition;
第5段：当VW大于等于4VWR/6时，开关K1～K3处于OFF，开关K4关闭(OFF)，电流主要经节点J5通过开关K5形成通路，负载由额定电压为5VWR/6串联工作的LED组成；Paragraph 5: When V W is greater than or equal to 4V WR /6, switches K1 ~ K3 are OFF, switch K4 is OFF (OFF), current is mainly formed through node J5 through switch K5, the load is connected by the rated voltage of 5V WR /6 series Working LED composition;
第6段：当VW大于等于5VWR/6时，开关K1～K4处于OFF，开关K5关闭(OFF)，电流经节点J6通过开关K6形成通路，负载由额定电压为6VWR/6串联工作的LED组成；Section 6: When V W is greater than or equal to 5V WR /6, switches K1 to K4 are OFF, switch K5 is OFF (OFF), current is formed through node J6 through switch K6, and the load is operated in series by rated voltage of 6V WR /6. LED composition;
开关K1～K6关闭时，可采用延时0.1ms的关闭方法，可获得相对较平稳的电流。When the switches K1 to K6 are turned off, a shutdown method with a delay of 0.1 ms can be used to obtain a relatively smooth current.
周期90～180度时：When the cycle is 90 to 180 degrees:
第6段：工作初始状态，电压由最大值向下减少，电路中开关K1～K5处于关闭状态(OFF)，开关K6处于开启状态，电流经节点J6通过开关K6形成通路，负载由额定电压为6VWR/6串联工作的LED组成；Section 6: In the initial state of operation, the voltage decreases from the maximum value. The switches K1 to K5 in the circuit are in the off state (OFF), the switch K6 is in the on state, and the current is formed through the switch J6 through the node J6. The load is rated by the rated voltage. LED composition of 6V WR /6 series operation;
第5段：当VW小于等于5VWR/6时，开关K5～K6开启(ON)，电流主要经节点J5通过开关K5形成通路，负载由额定电压为5VWR/6串联工作的LED组成；Paragraph 5: When V W is less than or equal to 5V WR /6, switch K5~K6 is turned ON (ON), current mainly forms a path through node J5 through switch K5, and the load is composed of LEDs with rated voltage of 5V WR /6 working in series;
第4段：当VW小于等于4VWR/6时，开关K4～K6开启(ON)，电流主要经节点J4通过开关K4形成通路，负载由额定电压为4VWR/6串联工作的LED组成；Section 4: When V W is less than or equal to 4V WR /6, the switches K4 to K6 are turned ON (ON), the current is mainly formed by the node J4 through the switch K4, and the load is composed of LEDs with a rated voltage of 4V WR /6 in series;
第3段：当VW小于等于3VWR/6时，开关K3～K6开启(ON)，电流主要经节点J3通过开关K3形成通路，负载由额定电压为3VWR/6串联工作的LED组成；Section 3: When V W is less than or equal to 3V WR /6, the switches K3 to K6 are turned ON (ON), the current is mainly formed through the switch J3 through the node J3, and the load is composed of LEDs with a rated voltage of 3V WR /6 in series;
第2段：当VW小于等于2VWR/6时，开关K2～K6开启(ON)，电流主要经节点J2通过开关K2形成通路，负载由额定电压为2VWR/6串联工作的LED组成；Section 2: When V W is less than or equal to 2V WR /6, the switches K2 to K6 are turned ON (ON), the current mainly forms a path through the switch J2 through the node J2, and the load is composed of LEDs with a rated voltage of 2V WR /6 in series;
第1段：当VW小于等于1VWR/6时，开关K1～K6开启(ON)，电流主要经节点J1通过开关K1形成通路，负载由额定电压为1VWR/6串联工作的LED组成。Phase 1: When V W is less than or equal to 1V WR /6, the switches K1 to K6 are turned ON. The current is mainly formed by the node J1 through the switch K1. The load is composed of LEDs with a rated voltage of 1V WR /6 in series.
开关K1～K6开启时，可采用提前0.1ms的开启方法，可获得相 对较平稳的电流。When the switches K1 to K6 are turned on, the opening method of 0.1 ms in advance can be used to obtain the phase. For a smoother current.
调光运行模式：外部设置一给定电压VT＝0时，VWmax对应C VWR，外部电压给定VT＝5V时，VWmax对应0V，设置0≤VWmax≤CVWR，C调整系数，为额定电压的倍数，如C＝1.12。VW大于VWmax的时段，对应各段的开关将关闭(OFF)，停止向负载供电。其作用为一种调光方案。参见图36、图37和图38，调节VWmax低于VWR，图中阴影部分将增加，输入到负载的功率将降低，从而达到调光的目的。例：当LED在AC220V市电正常工作是，调整交流电电压至AC180V的电压时，图中的阴影部分为VW高于254V的形成功率投影图部分，从周期约55.5度到124.5度之间，由于此段时间内相应的开关Kx处于关闭(OFF)，阴影部分的功耗(相当于正常市电下脉动直流半波的加载功率的57.0％)将被剔除，这部分功耗未被加载到负载上，使负载的亮度降低。当VWmax等于0时，所有开关将关闭(OFF)，负载供电量为零。可以做到无级调光，而不会发生能量消耗。Dimming operation mode: When externally set a given voltage V T =0, V Wmax corresponds to C V WR , when external voltage is given V T =5V, V Wmax corresponds to 0V, and 0≤V Wmax ≤CV WR is set , C adjustment coefficient , is a multiple of the rated voltage, such as C = 1.12. When V W is greater than V Wmax , the switches corresponding to each segment will be turned off (OFF) to stop supplying power to the load. Its role is a dimming scheme. Referring to Figures 36, 37 and 38, the adjustment V Wmax is lower than V WR , the shaded portion of the figure will increase, and the power input to the load will be reduced to achieve the purpose of dimming. Example: When the LED works normally in AC220V mains, when the AC voltage is adjusted to the voltage of AC180V, the shaded part in the figure is the part of the power projection of V W higher than 254V, from the period of about 55.5 degrees to 124.5 degrees. Since the corresponding switch Kx is off (OFF) during this period, the power consumption of the shaded part (equivalent to 57.0% of the load power of the pulsating DC half-wave under normal mains) will be removed, and this part of the power consumption is not loaded. On the load, the brightness of the load is reduced. When V Wmax is equal to 0, all switches will be turned off (OFF) and the load supply is zero. Stepless dimming can be achieved without energy consumption.
电压保护运行模式：设置VWmax＝CVWR。VW大于VWmax的时段，对应各段的开关将关闭(OFF)，停止向负载供电。参见图35、图37和图38，例：当市电达到270V的高电压时，图中的阴影部分为VW高于348V的形成功率阴影图部分，从周期约66度到114度之间，由于此段时间内K1～K6开关处于关闭(OFF)，阴影部分的功耗(相当于正常市电下脉动直流半波的加载功率的50.2％)将被剔除，这部分功耗未被加载到负载上，使负载不会因过电压烧毁；电网发生涌浪的时候，会发生瞬时的尖峰电压大大地高于VWmax，此刻各段开关处于关闭状态，实现了涌浪保护的目的。Voltage protection operation mode: Set V Wmax =CV WR . When V W is greater than V Wmax , the switches corresponding to each segment will be turned off (OFF) to stop supplying power to the load. Referring to FIG. 35, FIG. 37 and FIG. 38, for example, when the commercial power reaches a high voltage of 270V, the shaded portion in the figure is a part of the power generation shadow map in which V W is higher than 348V, and the period is between about 66 degrees and 114 degrees. Since the K1~K6 switch is off (OFF) during this period, the power consumption of the shaded part (equivalent to 50.2% of the load power of the pulsating DC half-wave under normal mains) will be removed, and this part of the power consumption is not loaded. When the load is applied, the load will not be burnt due to overvoltage; when the grid is swelled, the instantaneous spike voltage will be greatly higher than V Wmax . At this moment, each segment of the switch is in the off state, achieving the purpose of surge protection.
过流保护运行模式：本发明具有过流保护，参见图38，电流传感器测得电路中有效工作电流IW超过设计值KIWR，K为调整系数，例：设定IWR＝275mA，K＝1.2，逻辑开关控制器将关闭所有开关K1～K6(OFF)，开启开关(ON)K1～K6需在下次重新加载电源压后恢复。Overcurrent protection operation mode: The present invention has overcurrent protection. Referring to Fig. 38, the current working current I W measured in the current sensor exceeds the design value KI WR , K is an adjustment coefficient, for example: setting I WR = 275 mA, K = 1.2, the logic switch controller will turn off all switches K1 ~ K6 (OFF), open the switch (ON) K1 ~ K6 need to be restored after the next reload power supply.
色温调节运行模式：设置2组带驱动和LED负载的完整电路同时一起工作，其中：1组LED负载具有较高的色温，当外部设置的给定电压VT＝0时，最大允许脉动直流电压VWmax＝CVWR，给定电压VT＝5时，最大允许脉动直流电压VWmax＝0；而另1组LED负载具有较低的色温，当外部设置的给定电压VT＝0时，最大允许脉动直流电压VWmax＝0，给定电压VT＝5时，最大允许脉动直流电压VWmax＝CVWR。调节外部设置的给定电压VT值可实现LED照明色温的调整,色温调节的原理与调光运行 模式接近，可参见图38，但在本模式下只能调色温不能调整亮度。Color temperature adjustment operation mode: Set 2 sets of complete circuits with drive and LED load to work together at the same time, wherein: 1 set of LED load has higher color temperature, when the externally set given voltage V T =0, the maximum allowable pulsating DC voltage V Wmax = CV WR , the maximum allowable ripple DC voltage V Wmax =0 when the given voltage V T = 5; and the other group of LED loads have a lower color temperature, when the externally set given voltage V T =0, The maximum allowable pulsating DC voltage V Wmax =0, and the maximum allowable pulsating DC voltage V Wmax =CV WR when the given voltage V T =5. Adjusting the externally set voltage V T value can realize the adjustment of the LED illumination color temperature. The principle of color temperature adjustment is close to the dimming operation mode. See Figure 38, but in this mode, only the color temperature can not be adjusted.
依据与上述相同的原理，负载方式可分为3～7段，分段少，电路简单，但电流变化较大，容易在电网中产生低次谐波，参见图39；分段多，则电路结构复杂。一般取4～6段为佳。According to the same principle as above, the load mode can be divided into 3 to 7 segments, the segmentation is small, the circuit is simple, but the current changes greatly, and it is easy to generate low-order harmonics in the power grid, see Fig. 39; complex structure. Generally, 4 to 6 segments are preferred.
注：VW—脉动直流工作电压(1.4142*交流电压)；VWR—脉动直流额定最大工作电压(1.4142*交流电压)；VWmax—最大允许脉动直流电压(1.4142*交流电压)；IW—有效工作电流。IWR—额定有效工作电流。Note: V W - pulsating DC operating voltage (1.4142 * ac voltage); V WR - pulsating DC rated maximum operating voltage (1.4142 * ac voltage); V Wmax - maximum allowable pulsating DC voltage (1.4142 * ac voltage); I W - Effective operating current. I WR — rated effective operating current.
如市电为AC220，整流后的电压为DC311V，以每组LED负载为单颗芯片为例，则每颗芯片承受DC52V；如AC110，则芯片承受DC26V。设脉动直流半波的加载功率面积为1，参见图40，图中每个LED负载(LED模组1至6)被加载功率相差比较大，LED模组1达到脉动直流半波的加载功率面积的20.68％(为芯片额定出力的84.4％)；而LED模组6只有5.11％(为芯片额定出力的19.2％)，约为模组1的四分之一功率，经过实测验证，模组6的实际亮度很低；整个芯片组的平均被加载的功率为芯片额定出力的52.4％，芯片的利用率较低；而芯片组的额定出力(虚线框面积)为脉动直流半波的加载功率面积的159％。由于芯片冗余量过大，不仅芯片浪费，还造成驱动电源过大而浪费，同时增加了布置上的难度。因此，恒定直流状态下选择芯片电压的方法在脉动直流状态下存在一定问题，如何在保证芯片安全工作的前提下，提高芯片的利用率成为一个待解决的问题。For example, if the commercial power is AC220, the rectified voltage is DC311V. Taking each group of LED loads as a single chip, each chip is subjected to DC52V; if AC110, the chip is DC26V. Set the load power area of the pulsating DC half-wave to 1, as shown in Figure 40, each LED load (LED modules 1 to 6) is loaded with a large difference in power, and the LED module 1 reaches the pulsating DC half-wave loading power area. 20.68% (84.4% of the rated output of the chip); while the LED module 6 is only 5.11% (19.2% of the rated output of the chip), which is about a quarter of the power of the module 1. After testing, the module 6 The actual brightness is very low; the average power of the entire chipset is 52.4% of the rated output of the chip, and the utilization rate of the chip is low; and the rated output of the chipset (the area of the dotted line) is the loading power area of the pulsating DC half wave. 159%. Due to the excessive amount of chip redundancy, not only the chip is wasted, but also the driving power source is too large and wasted, and the difficulty in arrangement is increased. Therefore, the method of selecting the chip voltage under the constant DC state has certain problems in the pulsating DC state. How to improve the utilization rate of the chip becomes a problem to be solved under the premise of ensuring the safe operation of the chip.
设定6颗串联的LED芯片阵列的额定出力由脉动直流半波加载功率的1.59倍调低至1.2倍(由于LED电压增加电流大增，实质为功率性损坏。设置1.2倍功率余量足够保证LED不被烧毁)，参见图41，设LED芯片阵列芯片承载功率(图中矩形阴影部分面积)为脉动直流半波加载功率(脉动直流半波部分面积)的1.2倍时，可以由图41作图推算出市电为AC220V时芯片阵列的承载电压为DC236V；The rated output of the 6 series LED chip arrays is adjusted down to 1.2 times by 1.59 times of the pulsating DC half-wave loading power (the power is greatly increased due to the increase of the LED voltage, which is substantially power-damaged. Setting 1.2 times the power head is sufficient to ensure The LED is not burned. See Figure 41. If the LED chip array chip carrying power (the area of the rectangular shaded area in the figure) is 1.2 times the pulsating DC half-wave loading power (the area of the pulsating DC half-wave area), it can be made from Figure 41. The figure shows that the load voltage of the chip array when the mains is AC220V is DC236V;
参见图42，对LED模组1到模组6分别设置不同的电压值，可以得到不同承载电压值下的芯片加载功率面积(图中阴影部分)；Referring to FIG. 42, different voltage values are set for the LED module 1 to the module 6, respectively, and the chip loading power area (shaded portion in the figure) under different load voltage values can be obtained;
采用2*52V+4*35V高电压芯片(模组1和模组2的型号为VES-AADBHV45、模组3到模组6为ES-AADBHF40)组成串联阵列，则芯片阵列的承载电压调整为DC244V；作图43，获得的芯片阵列被加载功率面积为脉动直流半波功率面积的96.67％，芯片阵列被加载的功率接近1为理想状态；此时LED芯片阵列被加载的功率为芯片阵列额定出力77.6％；实验验证与推算值相近。 Using a 2*52V+4*35V high-voltage chip (module 1 and module 2 is VES-AADBHV45, module 3 to module 6 is ES-AADBHF40) to form a series array, the load voltage of the chip array is adjusted to DC244V; as shown in Fig. 43, the obtained chip array is loaded with a power area of 96.67% of the pulsating DC half-wave power area, and the power of the chip array is close to 1 is ideal; at this time, the power of the LED chip array is the chip array rating. The output is 77.6%; the experimental verification is similar to the estimated value.
各电压段的模组加载功率验证：设脉动直流半波的加载功率面积为1，电压为纵坐标时，容易通过图42计算DC52V芯片额定出力为26.52％，同理，DC35V芯片的额定出力为17.89％；图43则是市电为AC220V时，LED芯片阵列各模组的被加载的功率情况；表1是芯片阵列被加载的功率为脉动直流半波功率面积1时，市电电压分别为AC220V，AV246V，AC270V各个模组被加载功率的情况，表中可以看出，仅模组3在DC311V和DC348V略有过载，但由于模组1和模组2有功率裕量，实验证明模组3可通过。The module loading power verification of each voltage segment: set the loading power area of the pulsating DC half wave to be 1, and when the voltage is the ordinate, it is easy to calculate the rated output of the DC52V chip by 26.52%. Similarly, the rated output of the DC35V chip is 17.89%; Figure 43 shows the loaded power of each module of the LED chip array when the mains is AC220V; Table 1 shows that the power of the chip array is pulsating DC half-wave power area 1 when the power is loaded, and the mains voltage is The AC220V, AV246V, AC270V modules are loaded with power. It can be seen from the table that only module 3 is slightly overloaded in DC311V and DC348V, but because module 1 and module 2 have power margin, the experimental proof module 3 can pass.
在其他市电电压等级时，优化方式参照上述进行。At other mains voltage levels, the optimization method is referred to above.
理想状态下芯片承载功率验算如下表所示：The chip load power check under ideal conditions is shown in the following table:
Figure PCTCN2015079152-appb-000001
Figure PCTCN2015079152-appb-000001
另一种LED光机模组包括透明的光机模板43(如图44所示)，光机模板43上印制有银浆印刷电路414，光机模板43上粘贴有电源驱动晶圆级芯片411和整流桥晶圆级芯片412，电源驱动晶圆级芯片411和整流桥晶圆级芯片412为未封装的晶圆级器件；电源驱动晶圆级芯片411和整流桥晶圆级芯片412通过倒装焊接(如图46所示)或正装焊接(如图45所示)金线417与银浆印刷电路414焊接；光机模板43上还设有与银浆印刷电路414相互焊接的柔性转接电路44；所述光机模板43上还粘结有LED芯片阵列；LED芯片阵列由多个并联在一起的串联段组成，且每个串联段由3～7颗(能承受高电压的)LED芯片41串联组成的，每个LED芯片41通过倒装焊接或正装焊接金线417与银浆印刷电路414焊接。Another LED light machine module includes a transparent light machine template 43 (shown in FIG. 44). The light machine template 43 is printed with a silver paste printed circuit 414, and the light machine template 43 is pasted with a power source driven wafer level chip. 411 and rectifier bridge wafer level chip 412, power drive wafer level chip 411 and rectifier bridge wafer level chip 412 are unpackaged wafer level devices; power drive wafer level chip 411 and rectifier bridge wafer level chip 412 pass Flip-chip soldering (as shown in FIG. 46) or dressing soldering (as shown in FIG. 45) gold wire 417 is soldered to the silver paste printing circuit 414; the optomechanical template 43 is further provided with a flexible turn soldered to the silver paste printing circuit 414. The circuit board 43 is also bonded with an LED chip array; the LED chip array is composed of a plurality of series segments connected in parallel, and each series segment is composed of 3 to 7 (can withstand high voltage) The LED chips 41 are formed in series, and each of the LED chips 41 is soldered to the silver paste printed circuit 414 by flip chip bonding or dressing solder gold wires 417.
所述电源驱动晶圆级芯片411、整流桥晶圆级芯片412和LED芯片41之间填充有用于找平的透明封胶45，然后再采用除预留安装和焊接位置外，型式和尺寸与光机模板43的相同的透明盖板42加盖其上形成密封，如图47所示；或者直接在电源驱动晶圆级芯片411、整流桥晶圆级芯片412和LED芯片41形成一层将电源驱动晶圆级芯 片411、整流桥晶圆级芯片412和LED芯片41密封的透明封胶45，如图48所示。The power driving wafer level chip 411, the rectifier bridge wafer level chip 412 and the LED chip 41 are filled with a transparent encapsulant 45 for leveling, and then the type and size and light are used except for the reserved mounting and soldering positions. The same transparent cover 42 of the die plate 43 is capped to form a seal thereon, as shown in FIG. 47; or a power source is driven directly to the wafer level chip 411, the rectifier bridge wafer level chip 412 and the LED chip 41 to form a layer of power. Driving wafer level core The sheet 411, the rectifier bridge wafer level chip 412, and the transparent encapsulant 45 sealed by the LED chip 41 are as shown in FIG.
使用前述的LED光机模组组建LED照明核心构件的方法是在LED光机模组上设置柔性电路44后装入带荧光粉的内罩61即可；带荧光粉的内罩61是将含荧光粉的注塑颗粒料与不含荧光粉的透明注塑颗粒料混匀；混合比例根据需要配置，然后通过注塑成型即得；其中所述含荧光粉的注塑颗粒料是将20～30％荧光粉体与70～80％透明注塑颗粒料混匀，热熔后重新制成注塑颗粒料；荧光粉选用余辉时间大于8ms的荧光粉。 The method for forming the LED lighting core component by using the foregoing LED light machine module is to install the flexible circuit 44 on the LED light machine module and then insert the inner cover 61 with the phosphor; the inner cover 61 with the phosphor is included The injection molding granule of the phosphor is mixed with the transparent injection granule containing no phosphor; the mixing ratio is configured as needed, and then obtained by injection molding; wherein the phosphor-containing injection granule is 20 to 30% phosphor The body is mixed with 70-80% transparent injection-molded pellets, and is re-formed into an injection-molded pellet after hot-melting; the phosphor is selected from a phosphor having an afterglow time of more than 8 ms.

Claims (28)

  1. LED照明大芯片，其特征在于：包括一个宽度固定为W的第一透明基板(421)，第一透明基板(421)上设有N+1条平行的接口导线，第一透明基板(421)上设有N颗LED芯片(41)构成LED芯片串联组，每颗LED芯片(41)均位于两条相邻的接口导线之间，两条相邻的接口导线的间距为WJG等于W减接口导线宽再除以N，且每颗LED芯片(41)的正负极均分别连接在两条相邻的接口导线上；且同时并联多个LED串联组，使得第一透明基板(421)上形成可在第一透明基板(421)长度方向上延伸的N列多行的LED芯片阵列，N为3至7之间的整数。The LED lighting large chip is characterized in that: a first transparent substrate (421) having a width W is fixed, and the first transparent substrate (421) is provided with N+1 parallel interface wires, and the first transparent substrate (421) There are N LED chips (41) to form a series of LED chips, each LED chip (41) is located between two adjacent interface wires, and the spacing between two adjacent interface wires is W JG equals W minus The interface wire width is divided by N, and the positive and negative poles of each LED chip (41) are respectively connected to two adjacent interface wires; and a plurality of LED series groups are connected in parallel at the same time, so that the first transparent substrate (421) An N-row multi-row LED chip array which can extend in the longitudinal direction of the first transparent substrate (421) is formed, and N is an integer between 3 and 7.
  2. 根据权利要求1所述的LED照明大芯片，其特征在于：所述LED芯片阵列和接口导线在第一透明基板(421)上的形成方法是：采用透明的衬底做过渡外延层形成的薄型外延片，外延片采用成熟芯片制造技术分层生长电路和LED芯片，然后经切割形成宽度为W的LED照明大芯片，其中生长出的电路包括接口导线和连接LED芯片和接口导线的连接芯片的导线，透明基板作为衬底；所述的芯片二极由于不需要焊接，可采用透明电极，以增加芯片的发光面积；所述的芯片成熟制造技术是，采用有机金属化学气相沉积设备分层进行覆硅、上胶、光刻、蚀刻、镀膜、合金和磨片等工艺；或者采用传统技术将LED芯片阵列贴装在印制好银浆电路(414)的第一透明基板(421)上，并通过倒装焊接或金丝正装焊接与第一透明基板(421)上的银浆电路(414)连接，获得LED照明大芯片，银浆刷电路(414)包括接口导线和连接LED芯片和接口导线的连接芯片的导线。The LED lighting large chip according to claim 1, wherein the LED chip array and the interface wire are formed on the first transparent substrate (421) by using a transparent substrate as a thin epitaxial layer. Epitaxial wafer, epitaxial wafer adopts mature chip manufacturing technology, layered growth circuit and LED chip, and then cut to form LED illumination large chip with width W, wherein the grown circuit includes interface wire and connection chip connecting LED chip and interface wire a wire, a transparent substrate as a substrate; the chip diode may be a transparent electrode to increase the light-emitting area of the chip because it does not need to be soldered; the mature manufacturing technology of the chip is layered by using an organometallic chemical vapor deposition device. a process of coating silicon, sizing, lithography, etching, coating, alloying, and grinding; or mounting the LED chip array on the first transparent substrate (421) of the silver paste circuit (414) by conventional techniques. And connected to the silver paste circuit (414) on the first transparent substrate (421) by flip chip soldering or gold wire assembly soldering to obtain a large LED illumination chip, a silver paste brush circuit (414) And an interface connector including a wire connecting the LED chip and the chip lead wire interfaces.
  3. LED驱动电源大芯片,其特征在于：包括宽度固定为W的第二透明基板(413)，第二透明基板(413)印制有银浆电路(414)，银浆电路(414)上形成有接口导线，接口导线有接入端和输出端；接入端的宽度与光机模板(43)导线接入端的宽度WG相同或有与电气接插件相连的焊盘；输出端的银浆电路(414)上有N+1条平行的接口导线，相邻两条接口导线的间距WJG等于W减接口导线宽再除以N；第二透明基板(413)上先粘贴未经封装的电源驱动晶圆级芯片(411)和整流桥晶圆级芯片(412)，然后将未经封装的电源驱动晶圆级芯片(411)和整流桥晶圆级芯片(412)焊接在第二透明基板(413)上； 第二透明基板(413)有输出端的接口导线端的宽度与LED照明大芯片的宽度W相同，高度为H2；LED驱动电源大芯片上输出端的接口导线的用途是用来连接所述的LED照明大芯片上的芯片阵列的；N为3至7之间的整数。The LED driving power large chip is characterized in that: a second transparent substrate (413) having a width W is fixed, a second transparent substrate (413) is printed with a silver paste circuit (414), and a silver paste circuit (414) is formed thereon. The interface wire has an access end and an output end; the width of the access end is the same as the width W G of the optical template (43) wire access end or has a pad connected to the electrical connector; the silver paste circuit at the output end (414 There are N+1 parallel interface wires, the spacing between adjacent two interface wires W JG is equal to W minus the width of the interface wires and then divided by N; the second transparent substrate (413) is pasted with unencapsulated power supply crystal A circular chip (411) and a rectifier bridge wafer level chip (412), and then soldering the unpackaged power source driving wafer level chip (411) and the rectifier bridge wafer level chip (412) to the second transparent substrate (413) The width of the interface wire end of the second transparent substrate (413) having the output end is the same as the width W of the LED illumination large chip, and the height is H2; the purpose of the interface wire on the output end of the LED driving power supply chip is to connect the above The LED illuminates the chip array on the large chip; N is an integer between 3 and 7.
  4. 一种LED光机模组，其特征在于,它是按以下方法组建的：根据功率需要，对LED照明大芯片(420)进行剪裁，剪裁成不同长度的LED照明大芯片(420)具有不同的功率，在光机模板(43)上印刷银浆电路(414)，光机模板(43)上银浆电路(414)也具有接口导线，且数目和间距均与LED照明大芯片(420)的接口导线相同；将LED照明大芯片(420)带芯片的一面贴在光机模板(43)带银浆电路(414)的一面进行对焊，两者的接口导线相互对应焊接；同时将LED驱动电源大芯片(410)带银浆电路(414)的一面贴在光机模板(43)带银浆电路(414)的一面进行对焊；从而将LED照明大芯片(420)与LED驱动电源大芯片(410)接通；最后用透明胶封装LED照明大芯片和驱动电源大芯片周围的缝隙；所述的LED芯片承载电压为DC3.2V或大于DC10V的高电压。An LED light machine module is characterized in that it is assembled according to the following method: according to the power requirement, the LED lighting large chip (420) is cut, and the LED lighting large chip (420) cut into different lengths has different Power, the silver paste circuit (414) is printed on the optomechanical template (43), and the silver paste circuit (414) on the optomechanical template (43) also has interface wires, and the number and spacing are matched with the LED illumination large chip (420). The interface wires are the same; the side of the LED illumination chip (420) with the chip is attached to the side of the optical template (43) with the silver paste circuit (414) for butt welding, and the interface wires of the two are soldered correspondingly; The side of the power large chip (410) with the silver paste circuit (414) is attached to the side of the optical template (43) with the silver paste circuit (414) for butt welding; thereby, the LED illumination large chip (420) and the LED driving power source are large. The chip (410) is turned on; finally, the gap between the LED illumination large chip and the driving power large chip is encapsulated by the transparent glue; the LED chip carries a high voltage of DC3.2V or greater than DC10V.
  5. 大芯片水平布置的LED光机模组，其特征在于：包括印有银浆电路(414)的透明的光机模板(43)，银浆电路(414)在光机模板(43)上形成有接口导线，其接口导线的宽度和间距与LED照明大芯片(420)和LED驱动电源大芯片(410)的宽度W和间距WJG相同；对于大型光机模组中功率较大的，或还需通过过渡电路集成透明块(430)将光机模板(43)与1个以上的LED驱动电源大芯片(410)连接；再将LED驱动电源大芯片(410)和LED照明大芯片(420)带银浆电路(414)的一面透明光机模板(43)带银浆电路(414)的一面按接口导线对焊得LED光机模组。The large-chip horizontally arranged LED light machine module is characterized in that it comprises a transparent light machine template (43) printed with a silver paste circuit (414), and a silver paste circuit (414) is formed on the light machine template (43). The width and spacing of the interface wires are the same as the width W and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); for a large optomechanical module, the power is larger, or The optical module (43) needs to be connected to more than one LED driving power large chip (410) through the transition circuit integrated transparent block (430); the LED driving power large chip (410) and the LED lighting large chip (420) are further connected. A side of the transparent optomechanical template (43) with the silver paste circuit (414) with the silver paste circuit (414) is soldered to the LED illuminator module by the interface wires.
  6. 根据权利要求5所述的大芯片水平布置LED光机模组，其特征在于：对于中、小型的LED光机模组，外部电源或信号直接通过接插件(11)从焊接在光机模板(43)上的LED驱动电源大芯片(410)上接入；对于大型的LED光机模组，光机模板(43)上还焊接有柔性电路(44)，外部电源或信号通过接插件(11)连接柔性电路(44)接入到焊接在光机模板(43)上的LED驱动电源大芯片(410)上；对于大型LED光机模组中功率较大的，光机模板(43)上焊接有一个及以上的LED驱动电源大芯片(410)和一个及以上的LED照明大芯片(420)；最后沿LED驱动电源大芯片(410)、LED照明大芯片(420) 和/或过渡电路集成透明块(430)周边封透明胶(45)得LED光机模组。The large chip horizontal arrangement LED light machine module according to claim 5, wherein: for the medium and small LED light machine modules, the external power source or signal is directly soldered to the light machine template through the connector (11) ( 43) The LED driver power supply chip (410) is connected; for the large LED light machine module, the optical machine template (43) is also soldered with a flexible circuit (44), an external power source or signal through the connector (11) The connection flexible circuit (44) is connected to the LED driving power large chip (410) soldered on the optical template (43); for the large power of the large LED optical module, the optical template (43) Solder one or more LED driver power chip (410) and one or more LED lighting chip (420); last LED driver power chip (410), LED lighting chip (420) And/or the transition circuit integrates the transparent block (430) to seal the transparent glue (45) to obtain the LED light machine module.
  7. 根据权利要求5所述的大芯片水平布置LED光机模组，其特征在于：所述的透明过渡电路集成透明块(430)包括第三透明基板(431)，第三透明基板(431)上印刷有银浆电路(414)，银浆电路(414)有接口导线，接口导线有1组接入端和1组以上的输出端；接入端的宽度与光机模板(43)导线接入端的宽度WG相同；输出端的接口导线宽度与LED驱动电源大芯片(410)的接入端宽度WG相同；将过渡电路集成透明块(430)上印刷有银浆电路(414)的一面与光机模板(43)的带银浆电路(414)的一面按接口导线对焊；过渡电路集成透明块(430)用于将外部电源或信号接入一个及以上的LED驱动电源大芯片(410)，再通过LED驱动电源大芯片(410)输出到LED照明大芯片(420)上。The large chip horizontal arrangement LED light machine module according to claim 5, wherein the transparent transition circuit integrated transparent block (430) comprises a third transparent substrate (431), and a third transparent substrate (431) Printed with a silver paste circuit (414), the silver paste circuit (414) has an interface wire, the interface wire has a set of access terminals and more than one set of output terminals; the width of the access end and the optical machine template (43) wire access end the same as the width W G; the width of the interface wires to the LED driving power output of the large chip (410) access the same end of the width W G; the silver paste printed circuit (414) integrated circuit transparent to the transition block (430) on one side of the light The side of the machine template (43) with the silver paste circuit (414) is butt welded according to the interface wire; the transition circuit integrated transparent block (430) is used to connect an external power source or signal to one or more LED drive power large chips (410) Then, the LED driving power large chip (410) is output to the LED lighting large chip (420).
  8. 大芯片垂直布置的LED光机模组，其特征在于：包括印有银浆电路的透明的光机模板(43)，银浆电路在光机模板(43)上形成有接口导线，其接口导线的宽度和间距与LED照明大芯片(420)及LED驱动电源大芯片(410)的宽度W和间距WJG相同；通过1个及以上的呈L状的D型透明过渡电路集成透明块(460)将LED照明大芯片(420)垂直于光机模板(43)连接到光机模板(43)上；或对于大型光机模板，通过B型透明过渡电路集成透明块(440)将LED驱动电源大芯片(410)与1个及以上的呈L状的C型透明过渡电路集成透明块(450)将1个及以上LED照明大芯片(420)垂直于光机模板(43)连接到光机模板(43)上；再将LED驱动电源大芯片(410)带银浆电路的一面与透明光机模板(43)带银浆电路的一面按接口导线对焊得光机模组。The LED light machine module vertically arranged on the large chip is characterized in that it comprises a transparent light machine template (43) printed with a silver paste circuit, and the silver paste circuit forms an interface wire on the light machine template (43), and the interface wire thereof The width and spacing are the same as the width W and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); the transparent block is integrated by one or more L-shaped transparent transition circuits (460) The LED lighting large chip (420) is connected to the optomechanical template (43) perpendicular to the optomechanical template (43); or for the large optomechanical template, the LED driving power is integrated by the transparent transparent block (440) of the B-type transparent transition circuit Large chip (410) and one or more L-shaped C-type transparent transition circuit integrated transparent block (450) connect one or more LED lighting large chips (420) perpendicular to the optical template (43) to the optical machine On the template (43); the side of the LED driver power chip (410) with the silver paste circuit and the side of the transparent machine template (43) with the silver paste circuit are soldered to the optical module by the interface wire.
  9. 根据权利要求8所述的大芯片垂直布置LED光机模组，其特征在于：对于中、小型的LED光机模组，外部电源或信号直接通过接插件(11)从焊接在光机模板43上的LED驱动电源大芯片(410)上接入；对于大型的LED光机模组，光机模板(43)上还焊接有柔性电路44，外部电源或信号通过接插件(11)连接柔性电路(44)接入到焊接在光机模板43上的LED驱动电源大芯片(410)上；最后沿LED驱动电源大芯片(410)、LED照明大芯片(420)和B型透明过渡电路集成透明块(440)、C型透明过渡电路集成透明块(450)或D型透明过渡电路集成透明块(460)周边封透明胶(45)得封装完整 的LED光机模组。The large chip vertical arrangement LED light machine module according to claim 8, wherein: for medium and small LED light machine modules, an external power source or signal is directly soldered to the light machine template 43 through the connector (11). The upper LED driving power supply chip (410) is connected; for the large LED optical machine module, the optical machine template (43) is also soldered with a flexible circuit 44, and the external power supply or signal is connected to the flexible circuit through the connector (11). (44) is connected to the LED driving power large chip (410) soldered on the optomechanical template 43; finally, the LED driving power large chip (410), the LED lighting large chip (420) and the B-type transparent transition circuit are integrated and transparent. Block (440), C-type transparent transition circuit integrated transparent block (450) or D-type transparent transition circuit integrated transparent block (460) peripheral seal transparent adhesive (45) package complete LED light machine module.
  10. 根据权利要求8所述的大芯片垂直布置LED光机模组，其特征在于：所述D型透明过渡电路集成透明块(460)包括L型的透明基板，透明基板上印刷有银浆电路，银浆电路为L型的接口导线，其接口导线的宽度、数量和间距与LED照明大芯片(420)及LED驱动电源大芯片(410)的宽度W、数量N+1和间距WJG相同；所述C型透明过渡电路集成透明块(450)包括L型的透明基板，透明基板上印刷有银浆电路，银浆电路为空间上呈L型的2组接口导线，每1组的接口导线的宽度、数量和间距与LED照明大芯片(420)和LED驱动电源大芯片(410)的宽度W、数量N+1和间距WJG相同；所述的LED照明大芯片(420)带银浆电路的一面与呈L型的透明过渡电路集成透明块带银浆电路的一面按接口导线对焊；L型的透明过渡电路集成透明块的带银浆电路另一面与光机模板(43)的带银浆电路的一面按接口导线对焊；所述B型透明过渡电路集成透明块(440)的接口导线有1组接入端和1组以上的输出端，其接口导线的宽度、数量和间距与LED驱动电源大芯片(410)的宽度W、数量N+1和间距WJG相同。The large-chip vertical arrangement LED light machine module according to claim 8, wherein the D-type transparent transition circuit integrated transparent block (460) comprises an L-shaped transparent substrate, and a silver paste circuit is printed on the transparent substrate. The silver paste circuit is an L-shaped interface wire, and the width, the number and the spacing of the interface wires are the same as the width W, the number N+1 and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); The C-type transparent transition circuit integrated transparent block (450) comprises an L-shaped transparent substrate, and a silver paste circuit is printed on the transparent substrate, and the silver paste circuit is a pair of interface wires of L-shaped space, and the interface wires of each group The width, number and spacing are the same as the width W, the number N+1 and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); the LED lighting large chip (420) with silver paste One side of the circuit is integrated with the L-shaped transparent transition circuit. The transparent block with the silver paste circuit is butt welded by the interface wire; the L-shaped transparent transition circuit is integrated with the transparent block with the other side of the silver paste circuit and the optomechanical template (43). The side with the silver paste circuit is butt welded according to the interface wire; The interface wire of the integrated transparent block (440) has a set of access terminals and more than one set of output terminals, and the width, the number and the spacing of the interface wires and the width W and the number N of the LED driving power large chip (410) +1 is the same as the spacing W JG .
  11. 大芯片在非绝缘导热基板上的布置方法，其特征在于：将E型透明过渡电路集成透明块(470)背对银浆电路(414)的一面紧密贴合非绝缘导热基板布置；将LED驱动电源大芯片(410)带接口导线电路的一面贴合在E型透明过渡电路集成透明块(470)带银浆电路的一面进行对焊；LED照明大芯片(420)背对银浆电路(414)的一面紧密贴合非绝缘导热基板布置；LED照明大芯片(420)的接口导线端与透明过渡电路集成透明块(470)输出端接口导线端对齐；所述的LED照明大芯片(420)带芯片的一面还设有F型透明过渡电路集成透明块(480)；所述的F型透明过渡电路集成透明块(480)带银浆电路(414)面的一端与LED照明大芯片(420)带银浆电路(414)的一面按接口导线进行对焊，另一端再与E型透明过渡电路集成透明块(470)带银浆电路(414)的一面按接口导线进行对焊得光机模组。A method for arranging a large chip on a non-insulating thermally conductive substrate, characterized in that: a side of the E-type transparent transition circuit integrated transparent block (470) facing away from the silver paste circuit (414) is closely attached to the non-insulated thermally conductive substrate; One side of the power large chip (410) with the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block (470) with the silver paste circuit; the LED illumination large chip (420) is facing away from the silver paste circuit (414) One side closely conforms to the non-insulated thermal conductive substrate arrangement; the interface wire end of the LED illumination large chip (420) is aligned with the transparent transition circuit integrated transparent block (470) output end interface wire end; the LED illumination large chip (420) The side with the chip is further provided with an F-type transparent transition circuit integrated transparent block (480); the F-type transparent transition circuit integrates the transparent block (480) with one end of the silver paste circuit (414) surface and the LED illumination large chip (420) The side with the silver paste circuit (414) is butt welded according to the interface wire, and the other end is integrated with the E-type transparent transition circuit. The transparent block (470) with the silver paste circuit (414) is soldered to the interface by the interface wire. Module.
  12. 根据权利要求11所述的大芯片在非绝缘导热基板上的布置方法，其特征在于：非绝缘导热基板为金属或非金属导热材料制作，与LED照明大芯片(420)贴合面设为镜面；所述的非绝缘导热基板采用光机模板(43)的型式，或灯泡的导热支架(3)的型式，或散热器的型式；对于采用中、小型的LED光机模组，外部电源或信号直接通过接插件(11)焊接在贴合于光机模板(43)上的LED驱动电源 大芯片(410)上接入；对于大型的LED光机模组，外部电源或信号通过接插件(11)连接柔性电路(44)接入到E型透明过渡电路集成透明块(470)上再导入LED驱动电源大芯片(410)；所述的LED驱动电源大芯片(410)上或还设置有透明盖板(410.1)；所述的光机模组沿LED驱动电源大芯片(410)、LED照明大芯片(420)、E型透明过渡电路集成透明块(470)和F型透明过渡电路集成透明块(480)周边封透明胶(45)得到封装完整的LED光机模组。The method for arranging a large chip on a non-insulating heat-conducting substrate according to claim 11, wherein the non-insulating heat-conducting substrate is made of a metal or non-metal heat-conductive material, and the bonding surface of the LED illumination chip (420) is mirror-finished. The non-insulating heat-conducting substrate adopts the type of the light machine template (43), or the type of the heat-conducting bracket (3) of the bulb, or the type of the heat sink; for the medium-sized and small-sized LED light machine module, the external power source or The signal is directly soldered to the LED driving power source attached to the optomechanical template (43) through the connector (11). The large chip (410) is connected; for the large LED light machine module, the external power source or signal is connected to the flexible circuit (44) through the connector (11) to the E-transparent transition circuit integrated transparent block (470). Introducing an LED driving power large chip (410); the LED driving power large chip (410) is also provided with a transparent cover (410.1); the optical module is along the LED driving power large chip (410), LED lighting large chip (420), E-type transparent transition circuit integrated transparent block (470) and F-type transparent transition circuit integrated transparent block (480) peripheral sealing transparent adhesive (45) to obtain a complete package of LED light machine module.
  13. 根据权利要求11所述的大芯片在非绝缘导热基板上的布置方法，其特征在于：所述的E型透明过渡电路集成透明块(470)包括第三透明基板(470.1)，第三透明基板(470.1)上印刷有银浆电路(414)，银浆电路(414)形成接口导线，接口导线有接入端和输出端；接入端接口导线的宽度与柔性电路接入端的宽度WG1相同或有与电气接插件(11)相连的焊盘(414.1)，输出端的接口导线的宽度、数量和间距与LED照明大芯片(420)的宽度W、数量N+1和间距WJG相同，接口导线或还与LED驱动电源大芯片(410)的输入端连接，其宽度为WG；所述的F型透明过渡电路集成透明块(480)包括第四透明基板(480.1)，第四透明基板上(480.1)印刷有银浆电路，银浆电路为接口导线，接口导线的宽度、数量和间距与LED照明大芯片(420)的宽度W、数量N+1和间距WJG相同。The method for arranging a large chip on a non-insulating thermally conductive substrate according to claim 11, wherein the E-type transparent transition circuit integrated transparent block (470) comprises a third transparent substrate (470.1), and the third transparent substrate (470.1) printed with a silver paste circuit (414), the silver paste circuit (414) forms an interface wire, the interface wire has an access end and an output end; the width of the access end interface wire is the same as the width W G1 of the flexible circuit access end Or there is a pad (414.1) connected to the electrical connector (11), the width, number and spacing of the interface wires at the output are the same as the width W, the number N+1 and the spacing W JG of the LED illumination chip (420), the interface The wire is also connected to the input end of the LED driving power large chip (410), and has a width W G ; the F-type transparent transition circuit integrated transparent block (480) includes a fourth transparent substrate (480.1), and a fourth transparent substrate The upper (480.1) is printed with a silver paste circuit, and the silver paste circuit is an interface wire. The width, number and spacing of the interface wires are the same as the width W, the number N+1 and the pitch W JG of the LED illumination large chip (420).
  14. 根据权利要求11所述的大芯片在非绝缘导热基板上的布置方法，其特征在于：所述的非绝缘导热基板采用散热器型式时，非绝缘导热基板包含散热器(103)，散热器(103)上设有内卡环(81)和带荧光粉的内罩(61)的固定槽，内卡环(81)和内罩(61)的固定槽粘接固定在固定槽中，内卡环(81)由螺钉(12)二次固定；或设置内环罩(62)粘接在内卡环(81)和内罩(61)之间；透镜(7)粘接固定在内卡环(81)上，并通过透镜卡环(8)二次固定，透镜卡环(8)由卡环固定螺钉(14)固定在内卡环(81)上；所述的散热器上还设有接插件(11)，柔性电路(44)与接插件(11)和透明过渡电路集成透明块(470)连接。The method for arranging a large chip on a non-insulating thermally conductive substrate according to claim 11, wherein when the non-insulating thermally conductive substrate is in the form of a heat sink, the non-insulating thermally conductive substrate comprises a heat sink (103), a heat sink ( 103) a fixing groove is provided on the inner snap ring (81) and the inner cover (61) with the phosphor, and the fixing groove of the inner snap ring (81) and the inner cover (61) is fixedly fixed in the fixing groove, the inner card The ring (81) is secondarily fixed by a screw (12); or an inner ring cover (62) is provided between the inner snap ring (81) and the inner cover (61); the lens (7) is adhesively fixed to the inner snap ring (81) upper and fixed by the lens retaining ring (8), the lens retaining ring (8) is fixed to the inner snap ring (81) by a snap ring fixing screw (14); the heat sink is further provided The connector (11), the flexible circuit (44) is connected to the connector (11) and the transparent transition circuit integrated transparent block (470).
  15. 一种LED的驱动方法，其特征在于：将市电AC通过整流桥转化为脉动直流电，脉动直流电的电压大于零，小于等于脉动直流电额定最大工作电压VWR，在脉动直流电上设置3～7段LED负载，各段LED负载串联在一起形成LED负载串联段组，在脉动直流电的电压升高时，LED负载串联的段数逐级增加，在脉动直流电的电压下降时， LED负载串联的段数逐级减小，LED负载串联的段数为实际连入脉动直流电的LED负载段数。The driving method of the LED is characterized in that: the mains AC is converted into a pulsating direct current through a rectifier bridge, the voltage of the pulsating direct current is greater than zero, less than or equal to the rated maximum working voltage VWR of the pulsating direct current, and 3 to 7 segments of LEDs are set on the pulsating direct current. Load, each segment of LED load is connected in series to form an LED load series segment group. When the voltage of the pulsating direct current increases, the number of segments of the LED load connected in series increases stepwise, when the voltage of the pulsating direct current decreases, The number of segments in which the LED load is connected in series is gradually reduced, and the number of segments in which the LED load is connected in series is the number of LED load segments actually connected to the pulsating direct current.
  16. 根据权利要求15所述的LED驱动方法，其特征在于：所述LED负载串联的段数通过开关进行控制，开关的控制节点为电压的分段界限，所述电压的分段数量与LED负载串联的段数相对应；所述LED负载串联的段数的控制方法是，将每段LED负载的负极方向分别通过开关连接脉动直流电的负极，然后根据脉动直流电的电压变化对各个开关的通断进行控制，使用将某几段开关断路的方式实现LED负载串联的段数的改变。The LED driving method according to claim 15, wherein the number of segments of the LED load connected in series is controlled by a switch, the control node of the switch is a segmentation limit of the voltage, and the number of segments of the voltage is in series with the LED load. The number of segments corresponds to the number of segments of the LED load connected in series. The negative direction of each LED load is respectively connected to the negative pole of the pulsating direct current through a switch, and then the on/off of each switch is controlled according to the voltage change of the pulsating direct current. The number of segments of the LED load series is changed by breaking a certain number of switches.
  17. 根据权利要求16所述的LED驱动方法，其特征在于：设定脉动直流电的脉动直流工作电压VW大于VWmax的时段，控制所有开关断开，停止向所有LED负载供电，实现对LED的过电压及浪涌保护；通过外部设置一给定电压VT来调整脉动直流电的最大允许脉动直流电压VWmax的大小，从而实现对LED的发光亮度调整。The LED driving method according to claim 16, wherein the setting of the pulsating DC operating voltage V W of the pulsating direct current is greater than the V Wmax period, controlling all the switches to be turned off, stopping supplying power to all the LED loads, and realizing the LEDs. Voltage and surge protection; adjusting the maximum allowable pulsating DC voltage V Wmax of the pulsating direct current by externally setting a given voltage V T , thereby realizing the adjustment of the illumination brightness of the LED.
  18. 根据权利要求16所述的LED驱动方法，其特征在于：所述的开关在脉动直流电压上升阶段延时tm毫秒动作；在脉动直流电压下降阶段提前tm毫秒动作；以获得相对较平稳的LED工作电流。The LED driving method according to claim 16, wherein the switch operates at a delay of t m milliseconds in a pulsating DC voltage rising phase; in the pulsating DC voltage falling phase, an action of t m milliseconds is advanced; to obtain a relatively stable LED operating current.
  19. 根据权利要求16所述的LED驱动方法，其特征在于：通过设置电流传感器测得电路中有效工作电流IW，当IW超过设计值KIWR时，关闭所有开关以实现电流保护，开关的开启需在下次重新加载电压后恢复，其中K为调整系数，IWR为额定有效工作电流。The LED driving method according to claim 16, characterized in that the effective working current I W in the circuit is measured by setting a current sensor. When I W exceeds the design value KI WR , all switches are turned off to achieve current protection, and the switch is turned on. It needs to be restored after the next reload of the voltage, where K is the adjustment factor and I WR is the rated effective operating current.
  20. 根据权利要求16所述的LED驱动方法，其特征在于：设置2组带驱动和LED负载的完整电路同时一起工作，其中：1组LED负载具有较高的色温，当所述的给定电压VT值趋于低时，所述的最大允许脉动直流电压VWmax趋于高值；而另1组LED负载具有较低的色温，当所述的给定电压VT值趋于低时，所述的最大允许脉动直流电压VWmax趋于低值。调节所述的给定电压VT值可实现LED照明色温的调整。The LED driving method according to claim 16, wherein two sets of complete circuits of the belt drive and the LED load are simultaneously operated together, wherein: one set of LED loads has a higher color temperature when said given voltage V When the T value tends to be low, the maximum allowable pulsating DC voltage V Wmax tends to be high; and the other group of LED loads have a lower color temperature, when the given voltage V T value tends to be low, The maximum allowable pulsating DC voltage V Wmax tends to be low. Adjusting the given voltage V T value can achieve adjustment of the LED illumination color temperature.
  21. 根据权利要求15所述的LED驱动方法，其特征在于：设置串联在一起的每一段LED负载为具有不同的最大承载电压值的LED芯片组，可使在开关控制下工作的LED负载串联段组获得接近理想正弦波的工作电流曲线。The LED driving method according to claim 15, wherein each of the LED loads connected in series is an LED chip set having different maximum carrying voltage values, and the LED load serial segment group capable of operating under the switch control Obtain an operating current curve close to the ideal sine wave.
  22. 根据权利要求21所述的LED驱动方法，其特征在于，所述每一段LED负载最大承载电压的调整方法是：①以脉动直流电压为纵坐标、脉动直流周期为横坐标作图；②假定一个纯电阻负载，其功率 在脉动直流半波形成的正弦图形面积为1，作图；③设定LED负载串联段组的承载功率为纯电阻负载的120％，作一面积为1.2的矩形阴影图，矩形阴影的纵坐标值即为串联段组总的最大承载电压值；④同理，已知LED负载承载电压情况下，可作图得出LED负载的图形面积，逐段验证LED负载的面积之和大于开关的控制节点下的脉动直流正弦波面积；⑤选取LED负载串联段组上各段LED负载的承载电压值，相加大于等于串联段组总的最大承载电压值即可；其中，承载电压值较高的LED负载靠近正极端，承载电压值较低的LED负载靠近负极端。The LED driving method according to claim 21, wherein the method for adjusting the maximum load voltage of each segment of the LED load is: 1 using a pulsating DC voltage as an ordinate and a pulsating DC period as an abscissa; 2 assuming Pure resistive load, its power The sinusoidal pattern formed by the pulsating DC half-wave has an area of 1, and is plotted; 3 sets the carrying capacity of the LED load series segment group to be 120% of the pure resistive load, and makes a rectangular shadow map with an area of 1.2, and the ordinate of the rectangular shadow. The value is the total maximum carrying voltage value of the series segment group; 4 Similarly, when the LED load carrying voltage is known, the graph area of the LED load can be plotted, and the sum of the area of the LED load is verified step by step. The pulsating DC sine wave area under the node; 5 the load voltage value of each LED load on the LED load series segment group is selected, and the sum is greater than or equal to the total maximum carrying voltage value of the series segment group; wherein, the carrying voltage value is higher The LED load is close to the positive terminal, and the LED load carrying the lower voltage value is close to the negative terminal.
  23. 实现权利要求15至22任一权利要求所述方法的LED照明电路，其特征在于：包括输入端连接市电的整流桥(B1)，整流桥(B1)的输出端的正极连接在3～7段串接的LED负载的正极，每段LED负载的负极均分别连接在驱动电源芯片(U1)的连接节点(J1、J2…Jn)上，整流桥(B1)的输出端的负极连接在驱动电源芯片(U1)的接地端(GND),所述驱动电源芯片(U1)上还设有连接在所有LED负载的最前端的工作电压检测端(VW),所述驱动电源芯片(U1)上还设有最大允许脉动直流电压调节端(VWmax)。An LED lighting circuit for implementing the method according to any one of claims 15 to 22, characterized in that it comprises a rectifier bridge (B 1 ) connected to the mains at the input end, and the anode of the output end of the rectifier bridge (B 1 ) is connected at 3 to The positive pole of the 7-segment LED load, the negative pole of each LED load is respectively connected to the connection node (J 1 , J 2 ... J n ) of the driving power chip (U 1 ), and the output of the rectifier bridge (B 1 ) the negative terminal is connected to the chip driving power source (U 1) a ground terminal (GND), said driving power chip (U 1) is also provided on the foremost end all connected to the LED load operating voltage detection terminal (V W), the The maximum allowable ripple DC voltage regulation terminal (V Wmax ) is also provided on the driving power supply chip (U 1 ).
  24. 根据权利要求23所述的LED照明电路，其特征在于：所述驱动电源芯片(U1)包括电压检测及逻辑开关控制器(U2)、电压检测及逻辑开关控制器(U2)上设有工作电压检测端(VW)和最大允许脉动直流电压调节端(VWmax)；还包括连接节点(J1、J2…Jn)，每个连接节点(J1、J2…Jn)均分别通过开关管(K1、K2…Kn)连接至接地端(GND),且每个开关管(K1、K2…Kn)的控制端均连接在电压检测及逻辑开关控制器(U2)上。The LED lighting circuit according to claim 23, wherein said driving power supply chip (U 1 ) comprises a voltage detecting and logic switching controller (U 2 ), a voltage detecting and a logic switching controller (U 2 ) There are working voltage detection terminal (V W ) and maximum allowable ripple DC voltage regulation terminal (V Wmax ); also includes connection nodes (J 1 , J 2 ... J n ), each connection node (J 1 , J 2 ... J n ) are respectively connected to the ground (GND) through the switch tube (K 1 , K 2 ... K n ), and the control terminals of each switch tube (K 1 , K 2 ... K n ) are connected to the voltage detection and logic switch On the controller (U 2 ).
  25. 根据权利要求24所述的LED照明电路，其特征在于：所述每个连接节点(J1、J2…Jn)均分别通过开关管(K1、K2…Kn)连接在同一条合并连接线上，再通过合并连接线连接到接地端(GND)，合并连接线上设有电流检测电路，电流检测电路的输出端连接在电压检测及逻辑开关控制器(U2)上。12、根据权利要求3所述的LED光机模组，其特征在于：所述光机模板(43)的材质为薄片非金属透明材料，它是将薄型板材加温到近材料软化点，利用模具采用冲压设备冲压成型的。The LED lighting circuit according to claim 24, wherein each of said connection nodes (J 1 , J 2 ... J n ) are respectively connected to the same strip through switch tubes (K 1 , K 2 ... K n ) The merged connection line is connected to the ground terminal (GND) through the merged connection line, and the current detection circuit is provided on the merged connection line, and the output end of the current detection circuit is connected to the voltage detection and logic switch controller (U 2 ). The LED optomechanical module according to claim 3, wherein the templating template (43) is made of a sheet of non-metallic transparent material, which is used to warm the thin sheet to a softening point of the near material. The mold is stamped and formed by stamping equipment.
  26. 使用权利要求4至25任一权利要求所述的LED光机模组组建LED照明核心构件的方法：在LED光机模组上设置柔性电路(44)后装入带荧光粉的内罩(61)即可；带荧光粉的内罩(61)是将含荧光 粉的注塑颗粒料与不含荧光粉的透明注塑颗粒料混匀；混合比例根据需要配置，然后通过注塑成型即得；其中所述含荧光粉的注塑颗粒料是将20～30％荧光粉体与70～80％透明注塑颗粒料混匀，热熔后重新制成注塑颗粒料；荧光粉选用余辉时间大于8ms的荧光粉。A method for assembling an LED lighting core component using the LED light machine module according to any one of claims 4 to 25: a flexible circuit (44) is disposed on the LED light machine module, and the inner cover with phosphor is mounted (61) ); the inner cover (61) with phosphor is fluorescent The powdered injection granules are mixed with the transparent injection-molded granules without phosphor; the mixing ratio is configured as needed, and then obtained by injection molding; wherein the phosphor-containing injection granules are 20 to 30% phosphor powder It is mixed with 70-80% transparent injection-molded pellets, and is re-formed into injection-molded pellets after hot-melting; phosphors with phosphors with an afterglow time greater than 8ms are selected.
  27. LED光机模组，其特征在于：包括透明的光机模板(43)，光机模板(43)上印制有银浆印刷电路(414)，光机模板(43)上粘贴有电源驱动晶圆级芯片(411)和整流桥晶圆级芯片(412)，电源驱动晶圆级芯片(411)和整流桥晶圆级芯片(412)为未封装的晶圆级器件；电源驱动晶圆级芯片(411)和整流桥晶圆级芯片(412)通过倒装焊接或正装焊接金线(417)与银浆印刷电路(414)焊接；所述光机模板(43)上还粘结有LED芯片阵列；LED芯片阵列由多个并联在一起的串联段组成，且每个串联段由3～7颗LED芯片(41)串联组成的，每个LED芯片(41)通过倒装焊接或正装焊接金线(417)与银浆印刷电路(414)焊接。The LED light machine module is characterized in that it comprises a transparent light machine template (43), a silver paste printing circuit (414) is printed on the light machine template (43), and a power driving crystal is pasted on the light machine template (43). Circular chip (411) and rectifier bridge wafer level chip (412), power drive wafer level chip (411) and rectifier bridge wafer level chip (412) are unpackaged wafer level devices; power drive wafer level The chip (411) and the rectifier bridge wafer level chip (412) are soldered to the silver paste printed circuit (414) by flip chip bonding or dressing solder gold wires (417); the illuminating template (43) is also bonded with LEDs The chip array is composed of a plurality of series segments connected in parallel, and each series segment is composed of 3 to 7 LED chips (41) connected in series, and each LED chip (41) is flip-chip welded or assembled. The gold wire (417) is soldered to the silver paste printed circuit (414).
  28. 根据权利要求27所述的LED光机模组，其特征在于：所述电源驱动晶圆级芯片(411)、整流桥晶圆级芯片(412)和LED芯片(41)之间填充有用于找平的透明封胶(45)，然后再采用除预留安装和焊接位置外，型式和尺寸与光机模板(43)的相同的透明盖板(42)加盖其上形成密封；或者直接在电源驱动晶圆级芯片(411)、整流桥晶圆级芯片(412)和LED芯片(41)形成有一层将电源驱动晶圆级芯片(411)、整流桥晶圆级芯片(412)和LED芯片(41)密封的透明封胶(45)。 The LED light machine module according to claim 27, wherein said power source driving wafer level chip (411), rectifier bridge wafer level chip (412) and LED chip (41) are filled with a leveling device for leveling The transparent encapsulant (45) is then sealed with the same transparent cover (42) of the type and size of the optomechanical template (43) except for the reserved mounting and soldering locations; or directly on the power supply The driving wafer level chip (411), the rectifier bridge wafer level chip (412) and the LED chip (41) form a layer to drive the wafer level chip (411), the rectifier bridge wafer level chip (412) and the LED chip. (41) Sealed transparent sealant (45).
PCT/CN2015/079152 2014-05-20 2015-05-18 Led large chip and optical machine module group WO2015176626A1 (en)

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CN201410213295.0A CN103968286B (en) 2014-05-20 2014-05-20 The LED light machine module that large chip is horizontally disposed
CN201410213295.0 2014-05-20
CN201410214074.5 2014-05-20
CN201410211945.8A CN103957649B (en) 2014-05-20 2014-05-20 LED driving methods and LED illumination circuit
CN201410214077.9A CN103985809B (en) 2014-05-20 2014-05-20 Large chip for LED lighting
CN201410213282.3A CN103953901B (en) 2014-05-20 2014-05-20 Arrangement method of large chip on uninsulated heat conducting base plate
CN201410213615.2 2014-05-20
CN201410214077.9 2014-05-20
CN201410213349.3A CN103968287B (en) 2014-05-20 2014-05-20 LED light machine module with vertically arranged big chips
CN201410213282.3 2014-05-20
CN201410211945.8 2014-05-20
CN201410213615.2A CN103968342B (en) 2014-05-20 2014-05-20 LED ray machine module
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CN201410214074.5A CN103953902B (en) 2014-05-20 2014-05-20 LED drive power large chip

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