CN203810334U - Large chip for LED (light emitting diode) driving power supply - Google Patents
Large chip for LED (light emitting diode) driving power supply Download PDFInfo
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- CN203810334U CN203810334U CN201420259201.9U CN201420259201U CN203810334U CN 203810334 U CN203810334 U CN 203810334U CN 201420259201 U CN201420259201 U CN 201420259201U CN 203810334 U CN203810334 U CN 203810334U
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- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- 239000004332 silver Substances 0.000 claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002002 slurry Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 230000003245 working effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000011236 particulate material Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000011218 segmentation Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
The utility model discloses a large chip for an LED (light emitting diode) driving power supply. The large chip comprises a second transparent substrate (413) with a fixed width W, silver paste circuits are printed on the second transparent substrate (413), and interface wires provided with input ends and output ends are formed on the silver paste circuits; the silver paste circuits at the output ends are provided with N+1 interface wires in parallel, and a space WJG between each two interface wires is equal to W minus the width of the interface wires and then divided by N [WJG= (W-the width of the interface wires)/N]; a rectifier bridge wafer chip (412) and a power supply driving wafer chip (411) which are unpackaged are adhered to the second transparent substrate (413) by soldering.
Description
Technical field
The utility model relates to a kind of LED driving power large chip, belongs to LED lighting technical field.
Background technology
The Chinese patent application such as application number 201310140124.5,201310140138.7,201310140150.8,201310140105.2,201310140134.9,201310140106.7,201310140151.2,201310140136.8 disclose a plurality of ray machine module technical schemes that can use on LED bulb general and that exchange.These technology are for setting up the Lighting Industry framework centered by LED bulb, and the basic concept that makes LED bulb (lighting source), light fixture, illumination control the end product that becomes independent production, application is laid a good foundation.But above-mentioned patent not yet solves the problem of the built-in driving power of ray machine module.
Existing LED driving power mostly is Switching Power Supply, and volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, is then welded on PCB circuit board, its volume is still not enough to little of being placed into ray machine module internal.This thinking is difficult to make the microminiaturization of LED driving power, lightweight and transparence, cannot be placed in ray machine module, finally cannot realize civil power at LED bulb general and that exchange and directly access.
Utility model content
The purpose of this utility model is, a kind of LED driving power large chip is provided.It can be advantageously used in the LED ray machine module of different capacity requirement, and that volume can be done is less, to such an extent as to driving power can be put into even ray machine module internal of bulb inside, is conducive to the standardization of LED illumination, promotes on a large scale.
The technical solution of the utility model: LED driving power large chip, is characterized in: comprise that width is fixed as the second transparency carrier of W, the second transparency carrier is printed with silver slurry circuit, is formed with interface lead on silver slurry circuit, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template wire incoming end
gidentical or have a pad being connected with electric connector; On the silver slurry circuit of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); The power drives wafer stage chip and the rectifier bridge wafer stage chip that on the second transparency carrier, are pasted with un-encapsulated, the power drives wafer stage chip of un-encapsulated and rectifier bridge wafer stage chip are welded on the second transparency carrier; Also rectifier bridge wafer stage chip can be incorporated in power drives wafer stage chip; The second transparency carrier has the width W of width and LED illumination large chip of interface lead end of output identical, is highly H2; On LED driving power large chip, the purposes of the interface lead of output is for connecting chip array on described LED illumination large chip.N is the integer between 3 to 7.
Compared with prior art; LED illumination large chip of the present utility model can meet LED illumination application as the various primary demands of driving, light modulation, overvoltage and surge protection, overload etc.; and that volume can be done is less, to such an extent as to driving power can be put into even ray machine module internal of bulb inside.This is low-cost to LED illumination, miniaturization has very important significance.Thereby can promote LED chip towards integrated future development, the appearance of the large chip that makes to throw light on becomes a reality.The common use of the two will further promote the fast development of LED Lighting Industry.
Accompanying drawing explanation
Fig. 1 is the utility model high-power LED driving power source large chip front view;
Fig. 2 is the utility model low-power LED driving power large chip front view;
Fig. 3 is the high-power LED driving power source large chip front view of the utility model strip resistance;
Fig. 4 is the large-scale ray machine module of the utility model embodiment;
Fig. 5 is the medium-sized ray machine module of the utility model embodiment;
Fig. 6 is the structural representation of the utility model embodiment LED illumination large chip;
Fig. 7 is the structural representation of the ray machine core component of the utility model embodiment;
Fig. 8 is the LED voltage and current waveform of the utility model embodiment;
Fig. 9 is the extra-high pressure operate power oscillogram of the utility model embodiment;
The light modulation operate power oscillogram of Figure 10 the utility model embodiment;
The circuit connection diagram of Figure 11 the utility model embodiment;
The driving power chip internal circuit diagram of Figure 12 the utility model embodiment;
The LED voltage and current waveform of 3 sections of loads of Figure 13 the utility model embodiment;
Figure 14: the LED chip array module power of the utility model embodiment DC52V series connection loads distribution map;
Figure 15: the utility model embodiment LED chip array carrying voltage tentative calculation figure;
Figure 16: mono-DC52V chip bearing power tentative calculation figure of the utility model embodiment;
Figure 17: the LED chip array module power of the utility model embodiment 2*52V+4*35V series connection loads distribution map.
Being labeled as in accompanying drawing: 41-LED chip, 43-ray machine template, 43.1-ray machine template fixing hole, 44.1-solder joint, 61-is with the inner cover of fluorescent material, 410-LED driving power large chip, 411-LED power drives wafer stage chip, 412-rectifier bridge wafer stage chip, 413-the second transparency carrier, 414-silver slurry circuit, 414.1-pad, 416-resistance, the 420-LED large chip that throws light on, 421-the first transparency carrier.
The specific embodiment
Below in conjunction with drawings and Examples, the utility model is further described, but not as the foundation to the utility model restriction.
Embodiment.LED driving power large chip, is characterized in that: comprise that the second transparency carrier 413, the second transparency carriers 413 that width is fixed as W are printed with silver slurry circuit, on silver slurry circuit, be formed with interface lead, interface lead has incoming end and output; The width W of the width of incoming end and ray machine template 43 wire incoming ends
gidentical or have a pad being connected with electric connector; On the silver slurry circuit of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); On the second transparency carrier 413, first paste power drives wafer stage chip 411 and the rectifier bridge wafer stage chip 412 of un-encapsulated, then the power drives wafer stage chip 411 of un-encapsulated and rectifier bridge wafer stage chip 412 are welded on the second transparency carrier 413; Rectifier bridge wafer stage chip 412 can be incorporated in power drives wafer stage chip 411; The second transparency carrier 413 has the width W of width and LED illumination large chip of interface lead end of output identical, is highly H2; On LED driving power large chip, the purposes of the interface lead of output is for connecting chip array on described LED illumination large chip.
Its typical sizes is L=12.4mm, h4=5mm (large-scale) or L=12.4mm, and h4=97mm (medium and small), gross thickness is less than 1mm, referring to Fig. 1 and Tu D2.For anti-oxidation and damage wafer stage chip, at wafer stage chip surface local point glue, protect.
LED driving power large chip 410 has with LED illumination large chip 420 inputs the identical width W in road and interface lead spacing W
jG; Width W and interface lead spacing W
jGthe LED illumination large chip 420 of different manufacturers and the general connecting interface between the LED driving power large chip 410 of different manufacturers.The width W of output circuit is LED series connection length * interface lead spacing W
jG+ conductor width.
Because LED driving power large chip 410 can directly adopt mains-supplied, the ray machine module 4 that adopts LED driving power large chip 410 to build has the feature of little, the ultra-thin and whole clearing of volume, referring to Fig. 1 and Fig. 2.
For LED power drives chip 411 provides a more stable working power, can be provided with resistance 416 at LED driving power large chip 410 backs, be convenient to regulate internal reference voltage, referring to Fig. 3.
Use LED driving power large chip can set up LED ray machine module, it is set up by the following method: printed silver slurry circuit 414 in ray machine template 43, silver slurry circuit 414 in ray machine template 43 is also formed with interface lead, and number is all identical with the interface lead of LED driving power large chip 410 with spacing, the one side that the one side of LED driving power large chip 410 band silver slurry circuit is attached to ray machine template 43 band silver slurry circuit 414 is carried out butt welding; The one side of large chip 420 microarray strips of simultaneously LED being thrown light on is attached to the one side of ray machine template 43 band silver slurry circuit 414 and carries out butt welding, and both interface lead are corresponding welding mutually; Thereby throw light on large chip 420 of LED is connected with LED driving power large chip 410; Finally with transparent adhesive tape encapsulation LED illumination large chip 420 and driving power large chip 410 gap around.Referring to Fig. 4 and Fig. 5; Ray machine template 43 can adopt transparent template, and in the time of can making LED luminous, light upward can reduce blocking of light through LED driving power large chip 410 when reflecting smoothly.
Described LED illumination large chip 420, as shown in Figure 6, comprise that a width is also fixed as the first transparency carrier 421 of W, transparent substrates is provided with the parallel interface lead of N+1 bar, the first transparency carrier 421 is provided with N LEDs chip 41 and forms LED chip series connection group, every LEDs chip 41 is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jGand the both positive and negative polarity of every LEDs chip 41 is connected in two adjacent interface lead respectively=(W-interface lead is wide)/N); And a plurality of LED series connection groups in parallel simultaneously, make to form on the first transparency carrier 421 the LED chip array of the N row multirow that can extend on the first transparency carrier 421 length directions; N is the integer between 3 to 7; When setting up LED ray machine module, according to power needs, LED illumination large chip 420 to be cut out, the LED illumination large chip 420 that is cut into different length has different power
Described LED chip array and the interface lead formation method on the first transparency carrier 421 is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial layer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then through cutting, form the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire that is connected the connection chip of LED chip and interface lead, and substrate is as the first transparency carrier; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is: adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier 421 that produces silver slurry circuit 414, and be connected with the silver slurry circuit 414 on the first transparency carrier 421 by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit 414 comprises interface lead and the wire that is connected chip.
LED driving method on described LED ray machine module is: the rectifier bridge on rectifier bridge wafer stage chip 412 is converted into Rectified alternating current by civil power AC, and the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, a plurality of LED load series block groups form described LED chip array, when the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip 411 is controlled LED load series connection increases step by step, when the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
The hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the voltage change of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
Set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize the overvoltage of LED and surge protection; By adjusting the maximum of Rectified alternating current, allow pulsating dc voltage V
wmaxsize, thereby realize the luminosity adjustment to LED.
By being set, current sensor records effective operating current I in circuit
w, work as I
wsurpass design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
Described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
Each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can make the LED load series block group of working under switch is controlled obtain the operating current curve that approaches ideal sine wave.
The method of adjustment of the maximum carrying of described each section of LED load voltage is: 1. take pulsating dc voltage as ordinate, pulsating direct current cycle be abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
The material of described ray machine template 43 is thin slice transparent non-metallic material, as SiO
2, Al
2o
3deng, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.Because material is easily crisp and hardness is higher, while therefore can only cutting mode being processed into ray machine shape of template, cost is higher.
Use aforesaid LED ray machine module to set up the method for LED illumination core component, as shown in Figure 7, pack the inner cover 61 with fluorescent material into after flexible circuit 44 being set on LED ray machine module; Inner cover 61 with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
Below to take the operation principle of the present utility model that 6 groups of LED loads are example.Be that n value is 6.
First, alternating current AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, referring to Fig. 8, voltage is the wavy curve of half period (180 degree), and cycle pulsating dc voltage when 0 spends is zero, and when 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
The job requirement of this circuit, pulsating dc voltage be greater than zero be less than or equal to V
wRbetween, 3～7 sections of loads are set altogether, between each section of load, form series system, with voltage, raise, load (being LED load) series connection hop count increases step by step, and load voltage is by switch controlled loading, and referring to Fig. 8 and Figure 11, voltage switch node is voltage segmentation boundary.
Power supply management operational mode: the utility model is design current control device not, V is only depended in the keying of switches at different levels
wvariation, referring to Fig. 8, Figure 11 and Figure 12.
Cycle 0～90 is when spend:
The 1st section: work original state, the cycle is from 0 initial, K switch in circuit
1～K
6in opening (ON), electric current is mainly through node J
1pass through K switch
1form path, load is 1V by rated voltage
wRthe LED of/6 tandem workings forms;
The 2nd section: work as V
wbe more than or equal to 1V
wR/ 6 o'clock, K switch 1 was closed (OFF), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED of/6 tandem workings forms;
The 3rd section: work as V
wbe more than or equal to 2V
wR/ 6 o'clock, K switch 1 was in OFF, and K switch 2 is closed (OFF), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED of/6 tandem workings forms;
The 4th section: work as V
wbe more than or equal to 3V
wR/ 6 o'clock, K switch 1～K2 was in OFF, and K switch 3 is closed (OFF), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED of/6 tandem workings forms;
The 5th section: work as V
wbe more than or equal to 4V
wR/ 6 o'clock, K switch 1～K3 was in OFF, and K switch 4 is closed (OFF), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED of/6 tandem workings forms;
The 6th section: work as V
wbe more than or equal to 5V
wR/ 6 o'clock, K switch 1～K4 was in OFF, and K switch 5 is closed (OFF), and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED of/6 tandem workings forms;
When K switch 1～K6 closes, the method for closing of time delay 0.1ms can be adopted, electric current relatively stably can be obtained.
Cycle 90～180 is when spend:
The 6th section: work original state, voltage is reduced downwards by maximum, and in circuit, K switch 1～K5 is in closed condition (OFF), and K switch 6 is in opening, and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED of/6 tandem workings forms;
The 5th section: work as V
wbe less than or equal to 5V
wR/ 6 o'clock, K switch 5～K6 opened (ON), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED of/6 tandem workings forms;
The 4th section: work as V
wbe less than or equal to 4V
wR/ 6 o'clock, K switch 4～K6 opened (ON), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED of/6 tandem workings forms;
The 3rd section: work as V
wbe less than or equal to 3V
wR/ 6 o'clock, K switch 3～K6 opened (ON), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED of/6 tandem workings forms;
The 2nd section: work as V
wbe less than or equal to 2V
wR/ 6 o'clock, K switch 2～K6 opened (ON), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED of/6 tandem workings forms;
The 1st section: work as V
wbe less than or equal to 1V
wR/ 6 o'clock, K switch 1～K6 opened (ON), and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED of/6 tandem workings forms.
When K switch 1～K6 opens, the open method of 0.1ms in advance can be adopted, electric current relatively stably can be obtained.
Light modulation operational mode: during the given voltage VT=0 of outer setting one, V
wmaxcorresponding CV
wR, during the given VT=5V of external voltage, V
wmaxcorresponding 0V, arranges 0≤V
wmax≤ CV
wR, C adjusts coefficient, for the multiple of rated voltage, as C=1.12.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.It act as a kind of light modulation scheme.Referring to Figure 10, Figure 11 and Figure 12, regulate V
wmaxlower than V
wR, in figure, yl moiety will increase, and the power that is input to load will reduce, thereby reach the object of light modulation.Example: when LED in the normal work of AC220V civil power is, while adjusting alternating current voltage to the voltage of AC180V, the dash area in figure is V
wformation power perspective view part higher than 254V, from cycles approximately 55.5 degree to 124.5 degree, because corresponding K switch x in this period is in closing (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 57.0%) by disallowable, this part power consumption is not loaded in load, and the brightness of load is reduced.Work as V
wmaxequal at 0 o'clock, all switches will cut out (OFF), and load supplying amount is zero.Can accomplish stepless dimming, and energy consumption can not occur.
Voltage protection operational mode: V is set
wmax=CV
wR.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.Referring to Fig. 9, Figure 11 and Figure 12, example: when civil power reaches the high voltage of 270V, the dash area in figure is V
wformation power perspective view part higher than 348V, from cycles approximately 66 degree to 114 degree, because K1～K6 switch in this period is in cutting out (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 50.2%) by disallowable, this part power consumption is not loaded in load, and load can not burnt because of overvoltage.
Overcurrent protection operational mode: this circuit has overcurrent protection, referring to Figure 12, current sensor records effective operating current I in circuit
wsurpass design load KI
wR, K is for adjusting coefficient, example: set I
wR=275mA, K=1.2, logic switch controller will cut out all K switch 1～K6 (OFF), and opening switch (ON) K1～K6 need reload after power supply is pressed and recover in next time.
According to principle same as described above, mode of loading can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger, easily at electrical network, produces low-order harmonic, referring to Figure 13; Segmentation is many, and circuit structure is complicated.Generally get 4～6 sections for good.
Note: V
w-pulsating direct current operating voltage (1.4142* alternating voltage); V
wRthe specified maximum working voltage of-pulsating direct current (1.4142* alternating voltage); V
wmax-maximum the pulsating dc voltage (1.4142* alternating voltage) that allows; I
w-effective operating current.I
wR-specified effective operating current.
If civil power is AC220, the voltage after rectification is DC311V, take every group of LED load as single chips be example, every chips bears DC52V; As AC110, chip bears DC26V.If the loading power area of pulsating direct current half-wave is 1, referring to Figure 14, it is larger that each LED load in figure (LED module 1 to 6) is loaded power difference, LED module 1 reach pulsating direct current half-wave loading power area 20.68% (for chip nominal output 84.4%); And LED module 6 only have 5.11% (for chip nominal output 19.2%), be about 1/4th power of module 1, through actual measurement checking, the intrinsic brilliance of module 6 is very low; The power being on average loaded of whole chipset is 52.4% of chip nominal output, and the utilization rate of chip is lower; And the nominal output of chipset (dotted line frame area) is the loading power area of pulsating direct current half-wave 159%.Because chip amount of redundancy is excessive, not only chip waste, also causes driving power excessive and waste, and has increased the difficulty that cloth is set up simultaneously.Therefore, under Constant Direct Current state, select the method for chip voltage to have some problems under pulsating direct current state, how to guarantee that, under the prerequisite of chip trouble free service, the utilization rate that improves chip becomes a problem to be solved.
The nominal output of setting the LED chip array of 6 series connection loads 1.59 times of power by pulsating direct current half-wave and turns down to 1.2 times (consider small grids civil power there will be not less than 1.2 times of fluctuations), referring to Figure 15, when if LED chip array chip load power (dash area area in figure) is that pulsating direct current half-wave loads 1.2 times of power (pulsating direct current half-wave part area), in the time of can being extrapolated civil power and be AC220V by Figure 15 mapping, the carrying voltage of chip array be DC236V;
Referring to Figure 16, LED module 1 is arranged respectively to different magnitudes of voltage to module 6, the chip that can obtain under different bearer magnitude of voltage loads power area (dash area in figure);
Adopt 2*52V+4*35V high voltage chip (model of module 1 and module 2 is that VES-AADBHV45, module 3 are ES-AADBHF40 to module 6) to form serial array, the carrying voltage of chip array is adjusted into DC244V; Make Figure 17, it is 96.67% of pulsating direct current half-wave power area that the chip array of acquisition is loaded power area, and the power that chip array is loaded approaches 1 for perfect condition; The power that now LED chip array is loaded is chip array nominal output 77.6%; Experimental verification and estimated value are close.
The module of each voltage section loads power checking: the loading power area of establishing pulsating direct current half-wave is 1, and when voltage is ordinate, easily by Figure 16, calculating DC52V chip nominal output is 26.52%, and in like manner, the nominal output of DC35V chip is 17.89%; Figure 17 is civil power while being AC220V, the power situation being loaded of each module of LED chip array; Table 1 is that power that chip array is loaded is while being pulsating direct current half-wave power area 1, line voltage is respectively AC220V, AV246V, each module of AC270V is loaded the situation of power, in table, can find out, only module 3 slightly transships at DC311V and DC348V, but because module 1 and module 2 have margin of power, experimental results show that module 3 can pass through.
When civil power is 110V, optimal way is with reference to above-mentioned carrying out.
Under perfect condition, the checking computations of chip bearing power are as shown in the table:
Claims (1)
1.LED driving power large chip, it is characterized in that: comprise that width is fixed as the second transparency carrier (413) of W, the second transparency carrier (413) is printed with silver slurry circuit (414), on silver slurry circuit (414), be formed with interface lead, interface lead has incoming end and output; On the silver slurry circuit (414) of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N; The power drives wafer stage chip (411) and the rectifier bridge wafer stage chip (412) that on the second transparency carrier (413), are pasted with un-encapsulated, the power drives wafer stage chip (411) of un-encapsulated and rectifier bridge wafer stage chip (412) are welded on the second transparency carrier (413); The second transparency carrier (413) has the width of the interface lead end of output to be all W; N is the integer between 3 to 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420259201.9U CN203810334U (en) | 2014-05-20 | 2014-05-20 | Large chip for LED (light emitting diode) driving power supply |
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| CN201420259201.9U CN203810334U (en) | 2014-05-20 | 2014-05-20 | Large chip for LED (light emitting diode) driving power supply |
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| CN203810334U true CN203810334U (en) | 2014-09-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104279529A (en) * | 2014-09-24 | 2015-01-14 | 惠州市英吉尔光电科技有限公司 | LED miniature power supply |
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
-
2014
- 2014-05-20 CN CN201420259201.9U patent/CN203810334U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN104279529A (en) * | 2014-09-24 | 2015-01-14 | 惠州市英吉尔光电科技有限公司 | LED miniature power supply |
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Granted publication date: 20140903 |