WO2015145974A1 - Dispositif de traitement thermique - Google Patents

Dispositif de traitement thermique Download PDF

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Publication number
WO2015145974A1
WO2015145974A1 PCT/JP2015/000981 JP2015000981W WO2015145974A1 WO 2015145974 A1 WO2015145974 A1 WO 2015145974A1 JP 2015000981 W JP2015000981 W JP 2015000981W WO 2015145974 A1 WO2015145974 A1 WO 2015145974A1
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WIPO (PCT)
Prior art keywords
susceptor
induction coil
heat treatment
planar induction
treatment apparatus
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PCT/JP2015/000981
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English (en)
Japanese (ja)
Inventor
富廣 米永
河野　有美子
義人 鈴木
Original Assignee
東京エレクトロン株式会社
鈴木工業株式会社
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Application filed by 東京エレクトロン株式会社, 鈴木工業株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2015145974A1 publication Critical patent/WO2015145974A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention relates to a heat treatment apparatus that collectively heat-treats a plurality of semiconductor substrates arranged in multiple stages in the vertical direction using electromagnetic induction heating.
  • a vertical heat treatment apparatus that performs heat treatment in batch (batch) on a large number of semiconductor substrates (hereinafter referred to as “substrates” or “wafers”).
  • a heating method is known.
  • a susceptor having a function of an induction heating element is provided in a shelf shape inside the processing container, and an electromagnetic induction source is provided outside the processing container.
  • the electromagnetic induction source generates an oscillating (alternating) magnetic field in the processing container, and the susceptor disposed in the oscillating magnetic field generates heat by electromagnetic induction, and heats the wafer placed on the susceptor by heat transfer.
  • Patent Document 1 proposes an apparatus in which such a method is adopted and a spiral induction coil is provided in a processing container as an electromagnetic induction source.
  • the induction coil is wound around the outside of the processing vessel made of a quartz tube, the apparatus is enlarged and the distance between the induction coil and the susceptor of the induction heating element is increased and supplied to the induction coil.
  • the amount of heat generated by the susceptor (heating efficiency) with respect to the generated power is significantly deteriorated.
  • Patent Document 2 proposes an apparatus that includes an electromagnetic induction source on the outside of a processing container and forms a horizontal oscillating magnetic field in the processing container.
  • the electromagnetic induction source is an electromagnet in which a coil is wound around a U-shaped magnetic core, and the magnetic pole surface of the electromagnet is opposed to the outer peripheral end surface of the susceptor arranged in a shelf shape.
  • the oscillating magnetic field is formed.
  • a technique has been proposed in which a plurality of electromagnets are provided in a processing container to form an oscillating magnetic field that extends over the entire susceptor so that the entire susceptor generates heat uniformly.
  • the electromagnet having such a magnetic core is large in size, and the apparatus becomes large when a plurality of electromagnets are mounted on the processing container.
  • Patent Document 3 proposes a configuration in which a planar induction heating element is disposed so that the planar induction coil and each other face each other.
  • Patent Document 4 proposes a technique for uniformly heating the entire susceptor serving as an induction heating element by dividing a planar induction coil into a plurality of zones and controlling the current supplied to each zone. .
  • FIG. JP 2010-59490 A paragraphs 0041-0053
  • FIG. JP 2007-158123 A Paragraph 0017, FIG. 1, etc.
  • the susceptor serving as an induction heating element in both Patent Documents 3 and 4 is planarly guided so that the entire susceptor is within the oscillating magnetic field.
  • the coil and the mutual surface are arranged to face each other.
  • the present invention has been made in view of such circumstances, and its purpose is to collectively heat-treat a plurality of substrates arranged in multiple stages in the longitudinal (height) direction using electromagnetic induction heating. It is an object of the present invention to provide a technique capable of reducing the size of a heat treatment apparatus for applying heat treatment.
  • the present invention relates to a heat treatment apparatus for performing a heat treatment on a plurality of substrates arranged in a processing container.
  • a substrate holding portion in which at least a peripheral region thereof includes a conductive material, and a plurality of susceptors for mounting and heating the substrate are arranged in a shelf shape; Outside the processing container, a conductor is wound along a surface facing the side of the substrate holding unit, and a planar induction coil for heating the susceptor by electromagnetic induction, And a power supply unit that supplies high-frequency power to the planar induction coil.
  • the heat treatment apparatus of the present invention includes a substrate holding portion in which a susceptor for placing and heating a substrate is held in a shelf shape, and a planar induction coil that heats the susceptor by electromagnetic induction.
  • a planar induction coil that heats the susceptor by electromagnetic induction.
  • FIG. 1 is an exploded perspective view schematically showing a first embodiment of a heat treatment apparatus according to the present invention. It is a vertical side view which shows 1st Embodiment of heat processing apparatus. It is a top view which shows the shape of a susceptor and a conveyance mechanism. It is a side view which shows the shape of a susceptor. It is a perspective view which shows a rectangular planar induction coil. It is a schematic side view which shows the positional relationship of a planar induction coil and a susceptor. It is a schematic plan view which shows the magnetic flux from a planar induction coil, and the heat-generation area
  • FIG. 1 is an exploded perspective view schematically showing a heat treatment apparatus
  • FIG. 2 is a longitudinal side view of the heat treatment apparatus.
  • reference numeral 1 denotes a cylindrical processing container having a rectangular shape in plan view, and is formed of a metal material such as aluminum.
  • One of the side walls of the processing container 1 is formed with an opening as a loading / unloading port 11 for loading / unloading the wafer W, and the loading / unloading port 11 is configured to be opened and closed by a gate valve 12.
  • the susceptor Sn is formed in a circular shape having a diameter larger than that of the wafer.
  • the annular portion 21 forming the peripheral region of the susceptor Sn is thicker than the inner region 22 inside thereof. Is formed.
  • the susceptor Sn has a thermal conductivity of 70 W / m. K to 140 W / m. K isotropic graphite and a thermal conductivity of 160 W / m. It is formed of a conductive material having high thermal conductivity such as K silicon carbide (SiC).
  • the high thermal conductivity in the present invention is 70 W / m. K or higher is indicated.
  • the susceptor Sn and the three columns 331 to 333 constitute a part of the substrate holding unit 3.
  • the substrate holding part 3 includes a circular top plate 31 and a bottom plate 32 made of a highly heat-insulating material such as quartz, alumina fiber, porous ceramics, etc., and these have inner surfaces facing each other. Is provided.
  • the three support columns 331 to 333 are provided along the peripheral edge portions of the top plate 31 and the bottom plate 32, and hold the three peripheral portions of the susceptor Sn that are separated from each other. .
  • the support columns 331 and 333 at both ends are respectively provided at positions that do not hinder the transfer operation when the wafer W is transferred between the transfer mechanism 5 and the susceptor Sn.
  • the support columns 331 to 333 are arranged on the inner side of the periphery of the susceptor Sn as shown in FIG.
  • the susceptor Sn is held by the columns 331 to 333.
  • the arrangement interval A in the peripheral region (annular portion 21) of the susceptor Sn is set to 15 mm or less, for example.
  • the substrate holding unit 3 is connected to a rotation mechanism 35 through a cylindrical rotation shaft 34, and the rotation of the rotation mechanism 35 causes the substrate holding unit 3 to rotate around the vertical axis.
  • the rotation mechanism 35 may be provided outside the processing container 1. In this case, in order to maintain the airtightness in the processing container 1, the rotation mechanism 35 is provided between the rotation shaft 34 and the bottom wall of the processing container 1.
  • a sealing mechanism such as a magnetic fluid seal is provided.
  • the coil unit 4 is provided through a partition window 13 made of an insulating material.
  • the coil unit 4 includes a planar induction coil 42, a frame 41 that fixes the planar induction coil 42 inside, and a shielding plate 44 that covers the planar induction coil 42.
  • One surface of the planar induction coil 42 faces the partition window 13, and a shielding plate 44 is provided on the other surface (back surface).
  • the whole or a part of the shielding plate 44 is made of a soft magnetic material such as ferrite or powder magnetic material, and converges a magnetic flux to be radiated from the planar induction coil 42 to the back side thereof, thereby allowing the outer side of the coil unit 4 to be converged. It has the function of shielding the magnetic flux leaking to the surface.
  • the planar induction coil 42 is formed in a planar shape by winding a conductor, which is a coil wire 43, along a plane, for example, in a square spiral shape.
  • a conductor which is a coil wire 43
  • the coil wire 43 a litz wire bundled with very fine wires or a rectangular wire having a rectangular cross section is used.
  • the coil wire 43 may be made of a conductive tube material such as a copper tube, and the sheet induction coil 42 itself may be cooled by flowing a cooling medium through the hollow portion.
  • the planar induction coil 42 of this example is formed in a long and narrow rectangular shape along a predetermined plane, and the vertical length (long side) is L1.
  • the horizontal length (short side) is L2.
  • the coil wire 43 constituting the coil 42 is separated from the outer peripheral end surface of the susceptor Sn, and the amount of heat generated by the susceptor Sn is reduced by this amount. For this reason, the short side L2 is set to a size not more than half the diameter of the susceptor Sn.
  • the magnetic field generated by the strands 43a and 43c constituting the long side is reduced.
  • a space can be formed on the opposite side of the planar induction coil 42 such that the direction of the magnetic field is horizontal and the strength is uniform in the vertical direction.
  • the magnetic field (magnetic flux density) formed on the opposite side of the planar induction coil 42 is schematically shown by a horizontal magnetic flux 46 and a vertical magnetic flux 47.
  • the horizontal magnetic flux 46 is formed with the magnetic field by the strands 43a and 43c constituting the long side of the planar induction coil 42, and the vertical magnetic flux 47 is formed with the magnetic field by the strands 43b and 43d constituting the short side. Is done. Since the short side L2 is sufficiently smaller than the long side L1, the range covered by the vertical magnetic flux 47 due to the magnetic field generated by the strands 43b and 43d is limited to the vicinity of the upper and lower short sides of the planar coil 42. In this example, as shown in FIG. 6, in the space of the magnetic field (magnetic flux density) formed by the planar induction coil 42, the horizontal magnetic flux 46 extends to avoid the upper and lower ranges covered by the vertical magnetic flux 47.
  • the horizontal magnetic flux 46 passes through the peripheral region (annular portion 21) of the susceptor Sn, a uniform induced current flows through each susceptor Sn.
  • An opening 14 larger than the planar induction coil 42 is formed on the side wall of the processing container 1, and a partition window 13 is provided so as to close the opening 14.
  • the coil unit 4 is provided outside the partition window 13 so that the planar induction coil 42 faces the partition window 13 and forms a slight gap.
  • the coil unit 4 is provided with a blower fan or the like (not shown). By blowing air into the gap, the planar induction coil 42 and the partition window 13 facing the coil can be cooled.
  • One end side and the other end side of the planar induction coil 42 are connected to a high frequency power supply unit 45 (see FIG. 2) that outputs high frequency power of 20 kHz to 90 kHz, for example, and high frequency power is supplied to the planar induction coil 42.
  • an exhaust path 15 for exhausting the atmosphere in the processing container 1 and a gas supply path 16 for supplying a predetermined processing gas to the processing container 1 are connected to, for example, the lower side of the processing container 1.
  • the gas supply paths are drawn together as one, but a plurality of gas supply paths are actually provided.
  • a transfer mechanism 23 used when transferring the wafer W between the susceptor Sn of the substrate holding unit 3 and the transfer mechanism 5 is provided below the processing container 1.
  • the delivery mechanism 23 includes a plurality of, for example, three delivery pins 231 and a lifting mechanism 232 that raises and lowers the delivery pins 231.
  • Through holes 10, 30, and 20 are formed in regions corresponding to the delivery pins 231 in the bottom wall of the processing container 1, the bottom plate 32 of the substrate holding unit 3, and the susceptor Sn, respectively.
  • a sealing mechanism (not shown) such as a bellows seal is provided between the through hole 10 and the delivery pin 231 in order to ensure airtightness in the processing container 1.
  • the transfer mechanism 5 includes a holding member 51 that holds the central portion on the back surface side of the wafer W.
  • the holding member 51 can move forward and backward along the base 52 and can move up and down. It is configured.
  • the delivery pin 231 is protruded above the susceptor Sn to which the wafer W is to be delivered, and the holding member 51 that holds the wafer W is advanced above the delivery pin 231.
  • the holding member 51 is lowered to deliver the wafer W to the delivery pins 231.
  • the shape and size of the delivery pin 231 and the holding member 51 are set so that the holding member 51 can be lowered without colliding with the delivery pin 231. Then, after the holding member 51 is retracted, the transfer pins 231 are lowered to transfer the wafer W to the susceptor Sn. Similarly, the wafers W are sequentially transferred from the transfer mechanism 5 to the lower susceptor Sn one by one.
  • the transfer pins 231 are raised to lift the wafer W to the upper side of the susceptor Sn
  • the holding member 51 is advanced between the front surface of the susceptor Sn and the back surface of the wafer W.
  • the delivery pin 231 is lowered to deliver the wafer W to the holding member 51, and then the holding member 51 is retracted.
  • the heat treatment apparatus having the above-described configuration is connected to the control unit 6 as shown in FIG.
  • the control unit 6 includes a computer including a CPU and a storage unit (not shown), and a control program for performing heat treatment on the wafer W in the processing container 1 is recorded in the storage unit.
  • the control program is stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card, and installed from there.
  • the heat treatment apparatus first opens the loading / unloading port 11, and as described above, a plurality of the substrate holding units 3 are transferred from the transfer mechanism 5 by the cooperative operation of the delivery pins 231 and the transfer mechanism 5.
  • the loading / unloading port 11 is closed, the inside of the processing container 1 is evacuated and set to a predetermined pressure, high frequency power is supplied to the planar induction coil 42, and an oscillating magnetic field is formed in the processing container 1.
  • the magnetic flux formed with this magnetic field penetrates the peripheral area (annular part 21) of the susceptor Sn of the substrate holding part 3 to cause the susceptor Sn to generate heat.
  • the planar induction coil 42 is formed in a long and narrow rectangular shape, and if the long side L1 is sufficiently longer than the short side L2, the inside of the processing container 1 facing the planar induction coil 42 is A space in which the direction of the magnetic field is horizontal and the strength is uniform in the vertical direction can be formed.
  • the magnetic flux 46 diverges from the central portion of the coil-shaped induction coil 42, passes through the partition window provided in the processing container 1, and penetrates the annular portion 21 forming the peripheral region of the susceptor Sn in the horizontal direction.
  • the annular portion 21 forming the peripheral region of the susceptor Sn is formed so as to be thicker than the inner region 22 on the inner side.
  • the amount of heat generated by the susceptor Sn depends on the shape of the annular portion 21, and the greater the thickness t1 and the width B (see FIG. 4), the larger the magnetic flux penetrating the annular portion 21, thereby increasing the induced current.
  • the calorific value at 21 increases. Therefore, the thickness t1 and the width B of the annular portion 21 are set to appropriate dimensions so that the magnetic flux from the planar induction coil 42 penetrates the annular portion 21 and obtains a predetermined heat generation amount.
  • the susceptor Sn is made of a conductive material having a high thermal conductivity, and the amount of heat generated in the annular portion 21 of the susceptor Sn quickly moves in the inner region 22 toward the central portion of the susceptor Sn.
  • the amount of heat supplied from the annular portion 21 to the central portion of the susceptor Sn is determined by the thermal conductivity ⁇ and the thickness t2 of the inner region 22, and the higher the thermal conductivity ⁇ , the smaller the thickness t2.
  • the thickness t1 and the width of the annular portion 21 are taken into consideration. B and the thickness t2 of the inner region 22 are respectively determined.
  • the wafer W has a diameter of 300 mm
  • the susceptor Sn has a thermal conductivity ⁇ of 100 W / m.
  • the diameter of the susceptor Sn is 310 mm
  • the arrangement interval A in the annular portion 21 is 15 mm
  • the thickness t1 of the annular portion 21 is 15 mm
  • the width B of the annular portion 21 is 15 mm
  • the thickness t2 of the inner region 22 is 5 mm.
  • the amount of heat supplied from the annular portion 21 to the central portion of the susceptor Sn depends on the thermal conductivity ⁇ and the thickness t2 of the inner region 22, and ⁇ ⁇ t2 can be used as the index. Therefore, even when the material of the susceptor Sn is changed, an optimum dimension can be set by this index ⁇ ⁇ t2.
  • the susceptor Sn When the magnetic flux from the planar induction coil 42 penetrates the peripheral region (annular portion 21) of the susceptor Sn, the susceptor Sn generates heat, and the wafer W placed thereon transfers heat (transfers heat) from the susceptor Sn. ). From the susceptor S (n + 1) adjacent to the upper side of the susceptor Sn, there is heat transfer to the wafer W due to thermal radiation.
  • the susceptor Sn and the susceptor S ( The space between n + 1) is almost thermally closed.
  • the temperature distribution in the surface of the wafer W is naturally made uniform by the phenomenon of scattering of thermal radiation, and the temperature uniformity is remarkably improved.
  • the diameter of the susceptor Sn is larger than the diameter of the wafer W and the ratio of (arrangement interval of the peripheral region of the susceptor Sn) / (diameter of the susceptor Sn) is smaller, that is, the diameter of the susceptor Sn is larger.
  • the arrangement interval A is set to 15 mm or less so that the temperature in the plane of the wafer W is uniform. The sex can be improved sufficiently.
  • the wafer W placed on the susceptor Sn is heated in a state where the temperature uniformity in the surface is sufficiently good, and a predetermined heat treatment is performed. After the heat treatment is completed, the supply of the processing gas is stopped, and the loading / unloading port 11 is opened after returning the inside of the processing container 1 to the atmospheric pressure. Next, as described above, the wafer W is transferred from the susceptor Sn of the substrate holding unit 3 to the transfer mechanism 5 by the cooperative operation of the transfer pins 231 and the transfer mechanism 5.
  • an oscillating magnetic field is formed in the processing container 1 by applying high-frequency power to the planar induction coil 42, and the magnetic flux formed along with this magnetic field passes through the partition window 13 and is processed. It enters the container 1 and penetrates the annular portion 21 of the susceptor Sn of the substrate holding portion 3, and the annular portion 21 generates heat. Since the planar induction coil 42 configured by spirally winding the coil wire 43 along the surface facing the side of the substrate holding unit 3 is provided, the space occupied by this is reduced, and the heat treatment apparatus is reduced. The size can be greatly reduced.
  • the shape of the planar induction coil 42 is not limited to a rectangular shape that is elongated in the vertical direction.
  • the shape of the planar induction coil 42 may be a square.
  • FIG. 8 schematically shows a horizontal magnetic flux 46 and a vertical magnetic flux 47 associated with a magnetic field (magnetic flux density) formed by supplying high-frequency power to the square planar induction coil 42.
  • the planar induction coil 42 is square, the magnetic field formed on the facing side is not uniform in the vertical direction, and the magnetic flux formed along with the magnetic field radiates from the center of the planar induction coil 42 and radiates. It extends and obliquely penetrates the annular portion 21 that forms the peripheral region of the susceptor Sn.
  • the magnetic flux incident on the predetermined surface is (area of the incident surface) ⁇ (normal component of the magnetic flux density), and the magnetic flux penetrating the annular portion 21 is the horizontal magnetic flux 46 incident on the outer peripheral end surface of the annular portion 21. This is the sum of the vertical magnetic flux 47 incident on the horizontal surface of the annular portion 21.
  • the magnetic flux penetrating through the peripheral region (annular portion 21) of the susceptor Sn changes depending on the relative positional relationship with the coil 42.
  • the amount of heat generated is not uniform.
  • High frequency power was supplied to form an oscillating magnetic field in the processing container.
  • the magnetic flux accompanying this magnetic field penetrates the peripheral region (annular portion 21) of the susceptor Sn, so that the susceptor Sn generates heat.
  • a thermocouple was inserted from the outer peripheral end face of the susceptor Sn toward the inside thereof, the temperature of the susceptor Sn itself was measured, and the output of the high-frequency power source was controlled so as to keep the temperature constant.
  • the processing vessel has a pentagonal shape in plan view, and the temperature of the processing vessel was adjusted by flowing cooling water at 25 ° C. over the wall of the processing vessel.
  • a susceptor Sn having a diameter of 310 mm, a width B of the annular portion 21 of 15 mm, a thickness t1 of the annular portion 21 of 15 mm, an arrangement interval A of 15 mm, and a thickness t2 of the inner region 22 of 5 mm was used.
  • thermocouples were fixed at predetermined positions on the surface of the wafer, a temperature measurement wafer was prepared, and this was placed on the susceptor Sn, whereby the temperature distribution in the surface of the wafer W was measured.
  • the set temperature of the susceptor Sn was set to 300 ° C., 400 ° C., and 500 ° C., and the pressure in the processing container was changed to obtain the temperature distribution in the surface of the wafer W.
  • the pressure in the processing container was set to 50 mTorr or less (6.7 Pa or less, cutting), 2 Torr (0.27 kPa), and 10 Torr (1.33 kPa), respectively.
  • the results are shown in FIGS.
  • the vertical axis represents the temperature at a predetermined position of the wafer
  • the horizontal axis represents the distance from the center of the wafer
  • the pressure in the processing container is plotted by ⁇ for slash, ⁇ for 2 Torr, and ⁇ for 10 Torr. It is the peripheral region (annular portion 21) of the susceptor Sn that generates heat due to the magnetic flux from the planar induction coil 97, but the wafer W placed on the susceptor Sn has a temperature at the center approximately the same as the temperature near the periphery. Be the same.
  • the processing vessel is formed in a cylindrical body and the planar induction coil is configured in a curved shape.
  • the side wall 80 of the processing vessel 8 is formed in, for example, a cylindrical shape, and the curved induction coil 811 of the coil unit 81 is formed by winding an element wire in an elongated rectangular shape along the cylindrical peripheral surface.
  • the element wire to be provided is provided at an equal distance from the outer peripheral end face of the susceptor Sn facing the element wire. That is, it can be said that the curved induction coil 811 is a flat induction coil wound in an elongated rectangular shape and formed into a curved shape along the peripheral surface of the processing vessel 83.
  • 82 is a wafer W loading / unloading port
  • 83 is a gate valve
  • 84 is a partition window.
  • FIG. 14 shows a magnetic flux that is formed along with the oscillating magnetic field by the curved induction coil 811 and penetrates the annular portion 21 that forms the peripheral region of the susceptor Sn.
  • the curved induction coil 811 configured along the circumferential surface of the cylindrical shape is a long and narrow rectangular shape, the direction of the magnetic field is horizontal inside the processing container 8 on the opposite side, In addition, it is possible to form a space whose strength is uniform in the vertical direction. With this magnetic field, a magnetic flux that penetrates the annular portion 21 of the susceptor Sn horizontally is formed.
  • the hatched portion in FIG. 14 schematically shows a region where the magnetic flux from the curved induction coil 811 passes through the susceptor Sn and generates heat, but in the case of a planar induction coil (see FIG. 7). It can be seen that this area is expanded compared to.
  • the amount of heat generated by the susceptor Sn increases, and the heating efficiency of the wafer placed thereon increases. Further, when the coil width is increased, the heat generation area of the susceptor Sn is expanded along the outer periphery, and the heating efficiency of the wafer can be further increased.
  • the oscillating magnetic field formed by the curved induction coil 811 is not uniform in the vertical direction, and the peripheral region of the susceptor Sn ( The magnetic flux passing through the annular portion 21) is the sum of the horizontal magnetic flux and the vertical magnetic flux at the position where the susceptor Sn is disposed.
  • the amount of heat generated by each of the susceptors Sn is not uniform because the magnetic flux penetrating the peripheral region differs depending on the vertical position where the susceptor Sn is arranged, but the strands constituting the curved induction coil 811 are the outer periphery of each susceptor Sn. Since it is arranged at the same distance from the end face, the region through which the vertical magnetic flux passes along with the horizontal magnetic flux also extends along the outer periphery of the susceptor Sn, and the amount of heat generated by the susceptor Sn increases.
  • a coil unit 85 is provided so as to be movable up and down along the side wall 80 of the processing vessel 8 as shown in FIG.
  • the coil unit 85 includes a curved induction coil 851.
  • the curved induction coil 851 is formed by forming a planar induction coil wound in a square shape into a curved shape along the peripheral surface of the processing vessel. It is a thing.
  • a curved induction coil 851 provided on the frame 852 is drawn as the coil unit 85.
  • a shielding plate 80 that covers the curved induction coil 851 may be provided on the back side of the coil unit 85. The same applies to FIGS. 17 and 18 described later.
  • the coil unit 85 is supported by support members 86 on both sides of the frame 852, for example, and the support member 86 is configured to be movable up and down along a ball screw 87 extending in the vertical direction.
  • a motor 871 which is a rotation mechanism of the ball screw 87 and a ball screw bearing 872 are shown.
  • the two motors 871 are configured to be driven synchronously, and the coil unit 85 is moved up and down by rotating the ball screw 87.
  • the lifting mechanism includes a support member 86, a ball screw 87, and a motor 871.
  • the heat generated by the susceptor Sn is generated by the sum of the horizontal magnetic flux incident on the outer peripheral end surface of the susceptor Sn and the vertical magnetic flux incident on the horizontal surface of the peripheral region.
  • the amount changes. For example, if the susceptor Sn has a flat shape as shown in FIG. 16, the horizontal magnetic flux incident on the outer peripheral end face of the susceptor Sn is reduced, and the heat generation amount is generated by the vertical magnetic flux incident on the horizontal plane of the peripheral region of the susceptor Sn. Will be decided.
  • the annular portion 21 cannot be defined due to the flat shape of the susceptor Sn, and the region where the vertical magnetic flux is incident in the peripheral region of the susceptor Sn is a substantial annular portion.
  • the vertical magnetic flux is maximized at a position facing the middle between the center portion and the upper and lower ends of the planar induction coil 851 and decreases at a position facing the center portion and the vicinity of the end portion.
  • the calorific value distribution can be adjusted more precisely.
  • the curved induction coil 851 is not limited to a square shape, but may be a rectangular shape or a circular shape formed along a cylindrical peripheral surface. Alternatively, a planar view processing container may be used, and a planar induction coil may be provided along the flat side wall of the processing container.
  • FIG. 17 shows an example in which two coil units 88 and 89 each having square planar induction coils 881 and 891 are arranged vertically along the surface of one side wall of the processing vessel 1. Reference numerals 881 and 891 are connected to the high-frequency power supply units 882 and 892, respectively. In this example, another coil unit is provided on the other side wall of the processing container 1 facing the planar induction coils 881 and 891, and a high frequency power supply unit is connected to the square planar induction coil 100 of the coil unit. Has been.
  • the planar induction coil 100 is disposed such that its vertical position is, for example, between the planar induction coils 881 and 891.
  • two planar induction coils 881 and 891 are arranged in the vertical direction along the surface of the side wall of the processing container 1 having a square shape in plan view, but three or more planar induction coils are arranged in the vertical direction. May be arranged.
  • a plurality of planar induction coils may be arranged along the surface of the other side wall of the processing container 1.
  • the present invention is not limited to the arrangement of the planar induction coils on the opposite side walls of the processing container 1, and the coil units 91 and 92 are arranged on the side walls adjacent to each other as shown in FIG. You may provide so that orientation may mutually differ.
  • the susceptor used in the present invention only needs to have at least a part of its peripheral region made of a conductive material.
  • the annular portion 90 may be configured by embedding an annular member 94 made of a conductive material in the peripheral region of the susceptor body 93 formed in a disk shape with K aluminum nitride (AlN).
  • the annular member 94 is formed by annularly forming a thin plate made of a conductive material having a thickness of 0.1 mm or less, for example, and the annular member 94 is divided and embedded in a groove formed along the outer peripheral end surface of the susceptor body 93.
  • the annular portion 90 can be configured.
  • the annular portion 90 is not limited to the configuration in which the annular member 94 is embedded, and the annular member 94 may be configured to be fitted into the upper surface or the lower surface of the peripheral region of the susceptor body 93.
  • FIG. 20 shows a configuration in which the annular member 94 is fitted in an annular groove 93 a formed on the upper surface of the peripheral region of the susceptor body 93.
  • the annular member 94 is not limited to a thin plate, and may be formed by spiraling a strand made of a conductive material. Further, by using a ferromagnetic material made of iron (Fe), nickel (Ni), cobalt (Co), or alloys thereof as the annular member 94, the amount of heat generated in the annular portion 90 can be dramatically increased. .
  • the peripheral region of the susceptor Sn is evenly distributed along the outer periphery thereof. Can generate heat. Then, the amount of heat quickly moves from the peripheral region of the susceptor Sn toward the center thereof, and the temperature distribution in the surface of the susceptor Sn is made uniform.
  • a planar induction coil a configuration in which a plurality of spiral coils 95 as shown in FIG. 22 are connected to each other, a configuration in which a coil wire 96 as shown in FIG. 23 is wound in a ring shape, or as shown in FIG.
  • a configuration in which a simple coil wire 96 is wound in a double ring shape can be used. Furthermore, when the inside of the processing container 1 is in a reduced pressure environment, the susceptor is interposed between the top plate 31 of the substrate holding unit 3 and the uppermost susceptor SN, or between the bottom plate 32 and the lowermost susceptor S1. You may make it arrange

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Abstract

La présente invention vise à réaliser une réduction dans la taille d'un dispositif de traitement thermique qui effectue un traitement thermique sur une pluralité de substrats en un lot au moyen de chauffage par induction électromagnétique. A cet effet, l'invention concerne un dispositif de traitement thermique pour effectuer un traitement thermique sur une pluralité de substrats disposés à l'intérieur d'un récipient de traitement (1) équipé d'une partie de maintien de substrat (3) pour la disposition et le chauffage des substrats à l'intérieur du récipient de traitement (1) et sur laquelle une pluralité de suscepteurs (Sn), chacun comportant chacun par exemple du graphite isotrope ayant une conductivité thermique égale ou supérieure à 70 W/m·K, sont disposés et maintenus en forme d'étagère. En outre, à l'extérieur du récipient de traitement (1) et sur le côté de la partie de maintien de substrats (3), une bobine d'induction planaire (42) est prévue pour la formation d'un champ magnétique oscillant à l'intérieur du récipient de traitement (1) et le chauffage des suscepteurs (Sn). La bobine d'induction planaire (42) est constituée de fil à bobiner (43) qui est enroulé le long d'une surface en face du côté de la partie de maintien de substrats (3), de sorte que l'espace occupé par la bobine d'induction planaire(42) soit réduit et, par conséquent, le dispositif de traitement thermique peut être de taille réduite par rapport aux dispositifs de l'art antérieur.
PCT/JP2015/000981 2014-03-28 2015-02-26 Dispositif de traitement thermique WO2015145974A1 (fr)

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Cited By (1)

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WO2017144212A1 (fr) * 2016-02-24 2017-08-31 Ev Group E. Thallner Gmbh Dispositif et procédé pour supporter, faire tourner et chauffer et/ou refroidir un substrat

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Publication number Priority date Publication date Assignee Title
JP6584355B2 (ja) * 2016-03-29 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11935766B2 (en) 2018-03-06 2024-03-19 Tokyo Electron Limited Liquid processing apparatus and liquid processing method
WO2019171948A1 (fr) * 2018-03-06 2019-09-12 東京エレクトロン株式会社 Dispositif de traitement de liquide et procédé de traitement de liquide

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JP2003068443A (ja) * 2001-08-29 2003-03-07 Meidensha Corp 流体加熱用の誘導加熱ユニット
JP2004319845A (ja) * 2003-04-17 2004-11-11 Denso Corp 炭化珪素半導体装置の製造装置及び当該製造装置を用いた炭化珪素半導体装置の製造方法
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JP2012038622A (ja) * 2010-08-09 2012-02-23 Mitsui Eng & Shipbuild Co Ltd 誘導加熱装置および誘導加熱方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017144212A1 (fr) * 2016-02-24 2017-08-31 Ev Group E. Thallner Gmbh Dispositif et procédé pour supporter, faire tourner et chauffer et/ou refroidir un substrat

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