WO2015125779A1 - 接続構造体の製造方法 - Google Patents
接続構造体の製造方法 Download PDFInfo
- Publication number
- WO2015125779A1 WO2015125779A1 PCT/JP2015/054299 JP2015054299W WO2015125779A1 WO 2015125779 A1 WO2015125779 A1 WO 2015125779A1 JP 2015054299 W JP2015054299 W JP 2015054299W WO 2015125779 A1 WO2015125779 A1 WO 2015125779A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- connection
- conductive paste
- target member
- solder
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Definitions
- the present invention relates to a method for manufacturing a connection structure in which electrodes are electrically connected by solder particles.
- Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
- anisotropic conductive material conductive particles are dispersed in a binder resin.
- the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
- FOG Glass
- COF Chip on Film
- an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
- a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
- Patent Document 1 includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent include the resin layer.
- An adhesive tape present therein is disclosed. This adhesive tape is in the form of a film, not a paste.
- Patent Document 1 discloses a bonding method using the above-mentioned adhesive tape. Specifically, a first substrate, an adhesive tape, a second substrate, an adhesive tape, and a third substrate are laminated in this order from the bottom to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate is opposed to the second electrode provided on the surface of the second substrate. Moreover, the 2nd electrode provided in the surface of the 2nd board
- Patent Document 1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the surface of the electrode, and the pressurizing pressure further ensures the solder area.
- the pressure is set to 0 MPa or more, preferably 1 MPa or more. Further, even if the pressure intentionally applied to the adhesive tape is 0 MPa, the member disposed on the adhesive tape It is described that a predetermined pressure may be applied to the adhesive tape by its own weight.
- the adhesive tape described in Patent Document 1 is a film, not a paste. For this reason, it is difficult to efficiently arrange the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, a part of the solder powder is easily placed in a region (space) where no electrode is formed. Solder powder disposed in a region where no electrode is formed does not contribute to conduction between the electrodes.
- Patent Document 1 describes that the pressure applied intentionally to the adhesive tape may be 0 MPa, but the difference in effect between the case where a pressure exceeding 0 MPa is applied and the case where the pressure is 0 MPa is described. None is described.
- An object of the present invention is to provide a method for manufacturing a connection structure in which solder particles can be efficiently arranged on electrodes and conduction reliability between the electrodes can be improved.
- thermosetting component using a conductive paste containing a plurality of solder particles and a thermosetting component, on the surface of the first connection target member having at least one first electrode on the surface, A step of disposing the conductive paste; and a second connection target member having at least one second electrode on a surface opposite to the first connection target member side of the conductive paste; The step of disposing the first electrode and the second electrode so as to face each other, and heating the conductive paste to a temperature equal to or higher than a melting point of the solder particles and a temperature equal to or higher than a curing temperature of the thermosetting component.
- connection portion connecting the connection target member and the second connection target member with the conductive paste, and forming the step of arranging the second connection target member and the connection portion.
- the manufacturing method of the connecting structure is provided.
- the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
- the distance between the connection portions at a position where the first electrode and the second electrode face each other is set to 3 ⁇ m or more and 40 ⁇ m or less.
- a size of a portion of the connection portion where the first electrode and the second electrode are opposed to each other is defined as the first electrode. 2 times or more and 40 times or less the size of the portion where the second electrode is not opposed to the second electrode.
- the viscosity at 25 ° C. is 10 Pa ⁇ s or more and 800 Pa ⁇ s or less.
- the minimum value of the viscosity in the temperature region below the melting point of the solder particles is 0.1 Pa ⁇ s or more and 10 Pa ⁇ s or less.
- the said connection part has a corner
- the said 1st connection object member is located inside the said corner
- a first electrode for alignment, and the second connection target member has a second electrode for alignment inside the corner as the second electrode, and
- the shortest distance between the first electrode and the second electrode for alignment and the tip of the corner is 75 ⁇ m or more and 3000 ⁇ m or less.
- the first connection target member includes a plurality of first main electrodes having a length direction and a width direction as the first electrode.
- the second connection target member has a plurality of second main electrodes having a length direction and a width direction as the second electrode, and the length direction of the first main electrode and
- the difference between the linear expansion coefficient of the first connection target member in the width direction and the linear expansion coefficient of the second connection target member in the length direction and the width direction of the second main electrode is expressed as C (ppm / C), the heating temperature of the conductive paste when forming the connection portion is T (° C.), and the dimensions of the plurality of first main electrodes in the width direction of the first main electrode are Yt ( mm), and when the dimension in the width direction per one of the plurality of first main electrodes is Ya (mm), the formula: C ⁇ Meet the /1000000 ⁇ Yt ⁇ 0.5 ⁇ Ya.
- the method for manufacturing a connection structure uses a conductive paste containing a plurality of solder particles and a thermosetting component, and has a surface of a first connection target member having at least one first electrode on the surface. And a second connection target member having at least one second electrode on the surface opposite to the first connection target member side of the conductive paste, and a step of disposing the conductive paste on the conductive paste.
- the weight of the second connection target member is added to the conductive paste without applying pressure, the solder particles can be efficiently arranged on the electrodes, and the conduction reliability between the electrodes can be improved. Can be increased.
- FIG. 1 is a partially cutaway front sectional view schematically showing a connection structure obtained by a method for manufacturing a connection structure according to an embodiment of the present invention.
- 2 (a) to 2 (c) are cross-sectional views for explaining each step of the method for manufacturing the connection structure according to the embodiment of the present invention.
- FIG. 3A is a plan view showing a modified example of the connection structure
- FIG. 3B is a cross-sectional view taken along the line II of FIG. 3A.
- 4A is a plan view showing a modified example of the connection structure
- FIG. 4B is a cross-sectional view taken along the line II of FIG. 4A
- FIG. It is sectional drawing which follows the II-II line of Fig.4 (a).
- FIG. 5A is a plan view showing a modification of the connection structure
- FIG. 5B is a cross-sectional view taken along the line II in FIG. 5A.
- FIG. 6 is a partially cutaway front sectional view showing a modification of the connection structure.
- 7A, 7B, and 7C are images showing an example of a connection structure included in the embodiment of the present invention, and FIGS. 7A and 7B are cross-sectional images.
- 7 (c) is a planar image.
- 8A, 8B, and 8C are images showing an example of a connection structure that is not included in the embodiment of the present invention, and FIGS. 8A and 8B are cross-sectional images.
- FIG. 8C is a planar image.
- a conductive paste, a first connection target member, and a second connection target member are used.
- the conductive material used in the method for manufacturing a connection structure according to the present invention is not a conductive film but a conductive paste.
- the conductive paste includes a plurality of solder particles and a thermosetting component.
- the first connection target member has at least one first electrode on the surface.
- the second connection target member has at least one second electrode on the surface.
- the method for manufacturing a connection structure according to the present invention includes a step of disposing the conductive paste on a surface of the first connection target member, and a surface opposite to the first connection target member side of the conductive paste. Above, the step of arranging the second connection object member so that the first electrode and the second electrode face each other, the melting point of the solder particles or more and the curing temperature of the thermosetting component or more And heating the conductive paste to form a connection portion connecting the first connection target member and the second connection target member with the conductive paste.
- the step of arranging the second connection target member and the step of forming the connection portion no pressure is applied, and the second connection is applied to the conductive paste. The weight of the target member is added.
- the conductive paste has a weight force of the second connection target member. No pressurizing pressure exceeding is applied.
- the plurality of solder particles are easily collected between the first electrode and the second electrode, and the plurality of solder particles are collected on the electrode ( Line). Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
- a conductive paste is used instead of a conductive film.
- the inventors have found that they need to be used. Furthermore, in the step of arranging the second connection target member and the step of forming the connection portion, if the weight of the second connection target member is added to the conductive paste without applying pressure, the connection portion is Solder particles arranged in a region (space) where no electrode is formed before being formed are more easily collected between the first electrode and the second electrode, and a plurality of solder particles are separated into electrodes (lines). The inventors have also found that they can be arranged efficiently above.
- the thickness of the connecting portion can be adjusted as appropriate depending on the amount of the conductive paste applied.
- the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
- FIG. 1 schematically shows a connection structure obtained by the method for manufacturing a connection structure according to an embodiment of the present invention in a partially cutaway front sectional view.
- connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
- Part 4 The connection part 4 is formed of a conductive paste containing a plurality of solder particles and a thermosetting component.
- the connection portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
- the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
- the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
- the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
- no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
- connection structure 1 As shown in FIG. 1, in the connection structure 1, after a plurality of solder particles are melted, the molten solder particles are wetted and spread on the surface of the electrode to solidify to form a solder portion 4 ⁇ / b> A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using the solder particles, the solder portion 4A, the first electrode 2a, and the solder portion are compared with the case where the conductive outer surface is made of a metal such as nickel, gold or copper. The contact area between 4A and the second electrode 3a increases. For this reason, the conduction
- the conductive paste may contain a flux. When the flux is used, the flux is generally deactivated gradually by heating.
- connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
- the connection structure 1X of the modification shown in FIG. 6 differs from the connection structure 1 shown in FIG.
- the connection part 4X has the solder part 4XA and the hardened
- most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
- the solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA.
- the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
- connection structure 1 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
- connection structure 1 shown in FIG. 1 Next, a method for manufacturing a connection structure according to an embodiment of the present invention for obtaining the connection structure 1 shown in FIG. 1 will be described.
- the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
- a conductive paste 11 containing a plurality of solder particles 11A and a thermosetting component 11B is disposed on the surface of the first connection target member 2 (first step).
- the conductive paste 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided.
- the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
- the arrangement method of the conductive paste 11 is not particularly limited, and examples thereof include application with a dispenser, screen printing, and ejection with an inkjet device.
- the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
- the 2nd connection object member 3 is arrange
- the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
- the conductive paste 11 is heated above the melting point of the solder particles 11A and above the curing temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature lower than the melting point of the solder particles 11A and the curing temperature of the thermosetting component 11B. At the time of this heating, the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect). In this embodiment, since the conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Also, the solder particles 11A are melted and joined together. Further, the thermosetting component 11B is thermoset.
- connection portion 4 connecting the first connection target member 2 and the second connection target member 3 is formed with the conductive paste 11.
- the connection part 4 is formed by the conductive paste 11
- the solder part 4A is formed by joining a plurality of solder particles 11A
- the cured part 4B is formed by thermosetting the thermosetting component 11B. If the solder particles 11A move quickly, the first electrode 2a and the second electrode will start after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
- a preheating step may be provided in the first half of the third step.
- This preheating step is a temperature at which the thermosetting component 11B is not substantially thermally cured at a temperature equal to or higher than the melting temperature of the solder in a state where the weight of the second connection target member 3 is added to the conductive paste 11. This refers to the process of heating for 5 to 60 seconds.
- connection structure 1 shown in FIG. 1 is obtained.
- the second step and the third step may be performed continuously.
- the laminated body of the obtained 1st connection object member 2, the electrically conductive paste 11, and the 2nd connection object member 3 is moved to a heating part, and said 3rd said You may perform a process.
- the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
- connection structures 1 and 1X the first electrode 2a and the second electrode 3a are arranged in the stacking direction of the first electrode 2a, the connection portion 4, and the second electrode 3a.
- the solder portions 4A in the connection portions 4A, 4X are not less than 50% in the area 100% of the portions facing the first electrode 2a and the second electrode 3a. It is preferable to obtain a connection structure 1, 1X in which 4XA is arranged.
- the heating temperature in the third step is not particularly limited as long as it is higher than the melting point of the solder particles and higher than the curing temperature of the thermosetting component.
- the heating temperature is preferably 130 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
- the temperature of the preheating step is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, still more preferably 140 ° C. or higher, preferably less than 160 ° C., more preferably 150 ° C. or lower.
- the said 1st connection object member should just have at least 1 1st electrode.
- the first connection target member preferably has a plurality of first electrodes.
- the said 2nd connection object member should just have at least 1 2nd electrode.
- the second connection target member preferably has a plurality of second electrodes.
- the first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as semiconductor chips, capacitors, and diodes, and resin films, printed boards, flexible printed boards, flexible flat cables, rigid flexible boards, glass epoxies. Examples thereof include electronic components such as circuit boards such as substrates and glass substrates.
- the first and second connection target members are preferably electronic components.
- At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
- the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder particle not to gather on an electrode.
- the conductive paste is used, even if a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board is used, the solder particles can be efficiently collected on the electrode. And the reliability of conduction between the electrodes can be sufficiently enhanced.
- the reliability of conduction between electrodes by not applying pressure compared to the case of using other connection target members such as a semiconductor chip. The improvement effect can be obtained more effectively.
- the first and second connection target members may be a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
- the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, a SUS electrode, and a tungsten electrode.
- the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
- the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
- the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
- the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
- the trivalent metal element include Sn, Al, and Ga.
- the distance D1 of the connecting portion at the position where the first electrode and the second electrode face each other is preferably 3 ⁇ m or more, more preferably 5 ⁇ m or more, preferably 40 ⁇ m or less, more preferably 30 ⁇ m or less.
- the distance D1 is equal to or greater than the lower limit, the connection reliability between the connection portion and the connection target member is further increased.
- the distance D1 is less than or equal to the above upper limit, solder particles are more likely to gather on the electrodes when the connection portion is formed, and the conduction reliability between the electrodes is further enhanced.
- the distance D1 is preferably 10 ⁇ m or more, more preferably 12 ⁇ m or more.
- the size S1 of the portion where the first electrode and the second electrode face each other is the first portion.
- the size S2 of the portion where the second electrode is not opposed to the second electrode is preferably at least twice, more preferably 10 times. Above, preferably 40 times or less, more preferably 30 times or less.
- the size S1 and the size S2 are sizes when the connection structure is viewed in plan.
- the size S1 is an area of a region where the first electrode and the second electrode overlap when the connection structure is viewed in plan.
- the size S2 is an area of a region where the first electrode and the second electrode do not overlap when the connection structure is viewed in plan.
- the size S2 is a size obtained by removing the size S1 from the size of the entire connecting portion.
- connection structure Next, a modified example of the connection structure will be described.
- FIGS. 3A and 3B show a connection structure 51 which is a modified example.
- 3A is a plan view
- FIG. 3B is a cross-sectional view taken along the line II.
- the connection portion 54 preferably has a corner portion C. 3A and 3B, the connection portion 54 has four corner portions C in the main surface direction.
- the corner C is, for example, a portion where two sides of the connecting portion 54 intersect.
- the first connection target member 52 has the first electrode 52aa for alignment inside the corner portion C as the first electrode 52a.
- the second connection object member 53 preferably has a second electrode 53aa for alignment inside the corner C as the second electrode 53a. If such an alignment electrode is provided, when the solder particles gather between the first electrode 52aa for alignment and the second electrode 53aa for alignment and are joined to each other, the alignment electrode is used.
- the first electrode 52aa and the second electrode 53aa for alignment are prevented from being misaligned, and further, the misalignment that has occurred is eliminated (for example, FIG. 7A of the embodiment of the present invention). And a difference from FIG. 8A in a form not included in the embodiment of the present invention). For this reason, the conduction
- the first electrode 52a and the second electrode 53a are composed of one or more electrodes.
- the first electrode 52a and the second electrode 53a are preferably electrodes having an area array pattern of two or more comb-shaped, zigzag-shaped, dots and square electrodes. In that case, it is preferable that the patterns of the first electrode 52a and the second electrode 53a match when they face each other.
- the pitch of the electrodes is preferably 75 ⁇ m or more, more preferably 100 ⁇ m or more, preferably 2 mm or less, more preferably 1 mm or less.
- the length of the electrode is preferably 200 ⁇ m or more, more preferably 1 mm or more, preferably 5 mm or less, more preferably 3 mm or less.
- a part of the second connection target member 53 is overlapped with the first connection target member 52.
- FIG. 3A in the vicinity of the two corners C of the connection part 54 corresponding to the two corners of the tip of the second connection target member 53, two first electrodes 52aa for alignment, Two positioning second electrodes 53aa are arranged to face each other.
- the first electrode 52aa for alignment and the second electrode 53aa for alignment are electrically connected by a solder portion 54A.
- a cured product portion 54B is located.
- the dimension of the first electrode 52aa and the second electrode 53aa is a quadrangle whose one side is preferably 300 ⁇ m or more, more preferably 500 ⁇ m or more, and the shape of the first electrode 52aa and the second electrode 53aa is a square. , Rectangular, circular or elliptical.
- the first electrode 52aa and the second electrode 53aa may be used only for alignment, or may be used as power supply electrodes that require a large electrode area.
- the shortest distance between the first electrode for alignment and the second electrode for alignment and the tip of the corner is 75 ⁇ m or more and 3000 ⁇ m or less. It is preferable.
- FIG. 4A and 4B show a connection structure 51X which is a modified example.
- 4A is a plan view
- FIG. 4B is a cross-sectional view taken along the line II
- FIG. 4C is a cross-sectional view taken along the line II-II.
- connection portion 54X there are four including the two corners C of the connection portion 54X corresponding to the two corners of the tip of the second connection target member 53X and the remaining two corners C.
- first alignment electrodes 52aa and four second alignment electrodes 53aa are arranged to face each other.
- four first and second electrodes 52aa and 53aa for alignment may be arranged in the vicinity of the four corners C.
- the first electrode 52aa for alignment and the second electrode 53aa for alignment are electrically connected by a solder portion 54XA.
- a cured product portion 54XB is located around the solder portion 54XA.
- FIGS. 5A and 5B show a connection structure 51Y which is a modified example.
- FIG. 5A is a plan view
- FIG. 5B is a cross-sectional view taken along the line II.
- connection structure 51Y the displacement between the upper and lower electrodes due to thermal expansion during heating of the first connection target material 52Y and the second connection target material 53Y is suppressed, and the conduction reliability is further improved.
- the first connection target member 52Y includes a plurality of first main electrodes 52ab having a length direction and a width direction as the first electrode 52a
- the second connection target member 53Y includes:
- the second electrode 53a includes a plurality of second main electrodes 53ab having a length direction and a width direction, and the first connection target member 52Y in the length direction and the width direction of the first main electrode 52ab.
- the connection portion 54Y is formed.
- the heating temperature of the conductive paste is T (° C.)
- the first main electrode In the width direction of 2ab when the overall dimension of the plurality of first main electrodes 52ab is Yt (mm) and the dimension in the width direction of each of the plurality of first main electrodes 52ab is Ya (mm) It is preferable that the formula: C ⁇ T / 1000000 ⁇ Yt ⁇ 0.5 ⁇ Ya is satisfied.
- the plurality of first main electrodes 52ab are arranged in parallel in the length direction with a predetermined space.
- the plurality of second main electrodes 53ab are arranged side by side in parallel in the length direction with a predetermined space.
- the first connection target member 52Y has a first electrode 52aa for alignment.
- the second connection target member 53Y includes a second electrode 53aa for alignment.
- the first main electrode 52ab does not include the first electrode 52aa for alignment.
- the second main electrode 53ab does not include the second electrode 53aa for alignment.
- the first main electrode 52ab and the second main electrode 53ab are electrically connected by a solder portion 54YA.
- a cured product portion 54YB is located around the solder portion 54YA.
- the linear expansion coefficient is TMA / SS6100 (manufactured by SII) under conditions of a temperature range from a heating rate of 5 ° C./min, 25 ° C. to the heating temperature of the conductive paste when forming the connection part. Measured. The linear expansion coefficient is obtained as an average value in the temperature range.
- the viscosity of the conductive paste at 25 ° C. is preferably 10 Pa ⁇ s or more, more preferably 50 Pa ⁇ s or more, still more preferably 100 Pa ⁇ s or more, preferably 800 Pa. ⁇ S or less, more preferably 600 Pa ⁇ s or less, still more preferably 500 Pa ⁇ s or less.
- the viscosity can be appropriately adjusted depending on the type and amount of the compounding component. Further, the use of a filler can make the viscosity relatively high.
- the viscosity can be measured under conditions of 25 ° C. and 5 rpm using, for example, an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).
- the minimum value of viscosity of the conductive paste (minimum melt viscosity value) in a temperature range of 25 ° C. or higher and the melting point of the solder particles (solder) is preferably 0.1 Pa ⁇ s or higher, more preferably 0. .2 Pa ⁇ s or more, preferably 10 Pa ⁇ s or less, more preferably 1 Pa ⁇ s or less.
- the minimum value of the viscosity is not less than the above lower limit and not more than the above upper limit, the solder particles can be arranged more efficiently on the electrode.
- the minimum value of the above viscosity is STRESSTECH (manufactured by EOLOGICA), etc., strain control 1 rad, frequency 1 Hz, heating rate 20 ° C./min, measurement temperature range 40 to 200 ° C. (however, the melting point of solder particles is 200 ° C. In the case of exceeding the upper limit of the temperature, the melting point of the solder particles is taken into account). From the measurement result, the minimum value of the viscosity in the temperature region of the solder particle melting point or lower is evaluated.
- the conductive paste includes a thermosetting component and solder particles.
- the thermosetting component preferably includes a curable compound (thermosetting compound) that can be cured by heating, and a thermosetting agent.
- the conductive paste preferably contains a flux.
- the conductive paste preferably contains a filler.
- solder particles have solder on a conductive outer surface. As for the said solder particle, both a center part and an electroconductive outer surface are formed with the solder.
- the solder is preferably a low melting point metal having a melting point of 450 ° C. or lower.
- the solder particles are preferably low melting point metal particles having a melting point of 450 ° C. or lower.
- the low melting point metal particles are particles containing a low melting point metal.
- the low melting point metal is a metal having a melting point of 450 ° C. or lower.
- the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
- the solder particles include tin.
- the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more.
- the content of tin in the solder particles is equal to or higher than the lower limit, the connection reliability between the solder portion and the electrode is further enhanced.
- the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
- ICP-AES high-frequency inductively coupled plasma emission spectrometer
- EDX-800HS fluorescent X-ray analyzer
- solder particles By using the above solder particles, the solder is melted and joined to the electrodes, and the solder portion conducts between the electrodes. For example, since the solder portion and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of solder particles increases the bonding strength between the solder portion and the electrode. As a result, peeling between the solder portion and the electrode is further less likely to occur, and the conduction reliability and the connection reliability are effectively increased.
- the low melting point metal constituting the solder particles is not particularly limited.
- the low melting point metal is preferably tin or an alloy containing tin.
- the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
- the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
- the solder particles are preferably a filler material having a liquidus line of 450 ° C. or lower based on JIS Z3001: Welding terms.
- the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and bismuth.
- the solder particles include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium. Further, it may contain a metal such as molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder part and the electrode, the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight in 100% by weight of the solder particles. % Or less.
- the average particle diameter of the solder particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, still more preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 40 ⁇ m or less, and even more preferably 30 ⁇ m.
- it is more preferably 20 ⁇ m or less, particularly preferably 15 ⁇ m or less, and most preferably 10 ⁇ m or less.
- the average particle diameter of the solder particles is particularly preferably 3 ⁇ m or more and 30 ⁇ m or less.
- the average particle diameter” of the solder particles indicates the number average particle diameter.
- the average particle diameter of the solder particles is obtained, for example, by observing 50 arbitrary solder particles with an electron microscope or an optical microscope and calculating an average value.
- the content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, and most preferably 30%. % By weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
- the content of the solder particles is not less than the above lower limit and not more than the above upper limit, it is possible to more efficiently arrange the solder particles on the electrodes, and it is easy to arrange many solder particles between the electrodes, The conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, it is preferable that the content of the solder particles is large.
- thermosetting component examples include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
- an epoxy compound is preferable from the viewpoint of further improving the curability and viscosity of the conductive paste and further improving the connection reliability.
- the content of the thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. Is 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting component is large.
- thermosetting agent thermosetting component
- the thermosetting agent thermosets the thermosetting compound.
- examples of the thermosetting agent include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generator.
- the said thermosetting agent only 1 type may be used and 2 or more types may be used together.
- an imidazole curing agent, a polythiol curing agent, or an amine curing agent is preferable because the conductive paste can be cured more rapidly at a low temperature.
- a latent curing agent is preferable.
- the latent curing agent is preferably a latent imidazole curing agent, a latent polythiol curing agent or a latent amine curing agent.
- the said thermosetting agent may be coat
- the imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
- the polythiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .
- the solubility parameter of the polythiol curing agent is preferably 9.5 or more, and preferably 12 or less.
- the solubility parameter is calculated by the Fedors method.
- the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
- the amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5].
- examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
- thermal cation curing agent examples include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents.
- examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
- examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
- the sulfonium-based cationic curing agent examples include tri-p-tolylsulfonium hexafluorophosphate.
- the thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides.
- examples of the azo compound include azobisisobutyronitrile (AIBN).
- examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
- the reaction initiation temperature of the thermosetting agent is preferably 50 ° C or higher, more preferably 70 ° C or higher, still more preferably 80 ° C or higher, preferably 250 ° C or lower, more preferably 200 ° C or lower, still more preferably 150 ° C or lower, Especially preferably, it is 140 degrees C or less.
- the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently arranged on the electrode.
- the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
- the reaction initiation temperature of the thermosetting agent is preferably lower than the melting point of the solder in the solder particles, more preferably 5 ° C. or more, and more preferably 10 It is more preferable that the temperature is lower by at least ° C.
- the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
- the content of the thermosetting agent is not particularly limited.
- the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight with respect to 100 parts by weight of the thermosetting compound. Part or less, more preferably 75 parts by weight or less.
- the content of the thermosetting agent is at least the above lower limit, it is easy to sufficiently cure the conductive paste.
- the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
- the conductive paste preferably contains a flux.
- the flux is not particularly limited.
- a flux generally used for soldering or the like can be used.
- the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin.
- Etc As for the said flux, only 1 type may be used and 2 or more types may be used together.
- Examples of the molten salt include ammonium chloride.
- Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
- Examples of the pine resin include activated pine resin and non-activated pine resin.
- the flux is preferably an organic acid having two or more carboxyl groups, pine resin.
- the flux may be an organic acid having two or more carboxyl groups, or pine resin.
- the above rosins are rosins whose main component is abietic acid.
- the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
- the melting point of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 200 ° C. or lower, more preferably 160 ° C. or lower, even more preferably 150 ° C. or lower, still more preferably. 140 ° C. or lower.
- the melting point of the flux is preferably 80 ° C. or higher and 190 ° C. or lower.
- the melting point of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
- Examples of the flux having a melting point of 80 ° C. or higher and 190 ° C. or lower include succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point 104 ° C.), suberic acid
- Examples thereof include dicarboxylic acids such as (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), and malic acid (melting point 130 ° C.).
- the boiling point of the flux is preferably 200 ° C. or lower.
- the melting point of the flux is preferably lower than the melting point of the solder in the solder particles, more preferably 5 ° C. or more, more preferably 10 ° C. or more. Is more preferable.
- the melting point of the flux is preferably lower than the reaction start temperature of the thermosetting agent, more preferably 5 ° C. or more, and more preferably 10 ° C. or less. More preferably.
- the flux may be dispersed in the conductive paste or may be adhered on the surface of the solder particles.
- the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
- the conductive paste may not contain a flux.
- the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
- the conductive paste preferably contains a filler.
- a filler By using the filler, the latent heat expansion of the cured product of the conductive paste can be suppressed.
- the said filler only 1 type may be used and 2 or more types may be used together.
- the filler examples include inorganic fillers such as silica, talc, aluminum nitride, and alumina.
- the filler may be an organic filler or an organic-inorganic composite filler. As for the said filler, only 1 type may be used and 2 or more types may be used together.
- the conductive paste and the filler each preferably contain an inorganic filler.
- the specific gravity and thixotropy of the conductive paste can be controlled to a more suitable range, the sedimentation of the solder particles can be further suppressed, and the conduction reliability of the connection structure can be further enhanced.
- the conductive paste and the filler preferably each contain silica.
- the silica is a silica filler.
- the content of the filler in 100% by weight of the conductive paste is preferably 2% by weight or more, more preferably 5% by weight or more, preferably 60% by weight or less, more preferably 50% by weight or less.
- the content of the filler is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently arranged on the electrode.
- the conductive paste is, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant.
- various additives such as an antistatic agent and a flame retardant may be included.
- Polymer A Synthesis of reaction product (polymer A) of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F type epoxy resin: 72 parts by weight of bisphenol F (containing 4,4′-methylene bisphenol, 2,4′-methylene bisphenol and 2,2′-methylene bisphenol in a weight ratio of 2: 3: 1), 1,6-hexanediol 70 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC) were placed in a three-necked flask and dissolved at 150 ° C. under a nitrogen flow.
- bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC)
- the reaction product (Polymer A) contains a hydroxyl group derived from bisphenol F, 1,6-hexanediol diglycidyl ether, and an epoxy group of bisphenol F type epoxy resin. It was confirmed that it has a structural unit bonded to the main chain and has an epoxy group at both ends.
- the weight average molecular weight of the reaction product (polymer A) obtained by GPC was 10,000, and the number average molecular weight was 3,500.
- Polymer B both ends epoxy group rigid skeleton phenoxy resin, “YX6900BH45” manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000
- Thermosetting compound 1 Resorcinol type epoxy compound, “EX-201” manufactured by Nagase ChemteX Corporation
- Thermosetting compound 2 Naphthalene type epoxy compound, “HP-4032D” manufactured by DIC
- Thermosetting compound 3 bisphenol F type epoxy resin, “EVA-830CRP” manufactured by DIC
- Thermosetting agent Pentaerythritol tetrakis (3-mercaptobutyrate), “Karenz MT PE1” manufactured by Showa Denko KK
- Latent epoxy thermosetting agent T & K TOKA "Fujicure 7000"
- Latent thermosetting agent Microcapsule type, “HXA-3932HP” manufactured by Asahi Kasei E-Materials
- Solder particles 1 (Sn-58Bi solder particles, melting point 139 ° C., “DS10-25” manufactured by Mitsui Mining & Smelting Co., Ltd., average particle size 10 ⁇ m)
- Solder particles 2 (Sn-58Bi solder particles, melting point 139 ° C., “10-25” manufactured by Mitsui Mining & Smelting Co., Ltd., average particle size 20 ⁇ m)
- Solder particles 3 (Sn-58Bi solder particles, melting point 139 ° C., “DS20-38” manufactured by Mitsui Mining & Smelting Co., Ltd., average particle size 29 ⁇ m)
- Solder particles 4 (Sn-58Bi solder particles, melting point 139 ° C., average particle size 45 ⁇ m, selected product)
- conductive particles 1 Production method of conductive particles 1: Divinylbenzene resin particles having an average particle diameter of 10 ⁇ m (“Micropearl SP-210” manufactured by Sekisui Chemical Co., Ltd.) were subjected to electroless nickel plating to form a base nickel plating layer having a thickness of 0.1 ⁇ m on the surface of the resin particles. Next, the resin particles on which the base nickel plating layer was formed were subjected to electrolytic copper plating to form a 1 ⁇ m thick copper layer. Furthermore, electrolytic plating was performed using an electrolytic plating solution containing tin and bismuth to form a solder layer having a thickness of 3 ⁇ m.
- Conductive particles 1 were prepared.
- Phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
- the overlapping area of the glass epoxy substrate and the flexible printed board was 1.5 cm ⁇ 4 mm, and the number of connected electrodes was 100 pairs.
- a glass epoxy board and a flexible printed board on which positioning electrodes (four in total) are respectively located inside the four corners of the connection part in the obtained first connection structure were used.
- the shortest distance between the first and second electrodes for alignment and the tips of the four corners was 500 ⁇ m.
- the anisotropic conductive paste immediately after fabrication was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 50 ⁇ m to form an anisotropic conductive paste layer.
- the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressure was applied. The weight of the flexible printed board is added to the anisotropic conductive paste layer. Thereafter, while heating the anisotropic conductive paste layer to a temperature of 185 ° C., the solder was melted and the anisotropic conductive paste layer was cured at 185 ° C. to obtain a first connection structure.
- the overlapping area of the glass epoxy substrate and the flexible printed board was 1.5 cm ⁇ 4 mm, and the number of connected electrodes was 67 pairs.
- a second connection structure was obtained in the same manner as the production of the first connection structure except that the glass epoxy substrate and the flexible printed circuit board having different L / S were used.
- the overlapping area of the glass epoxy substrate and the flexible printed circuit board was 1.5 cm ⁇ 4 mm, and the number of connected electrodes was 50 pairs.
- 3rd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
- Example 5 Example 1 except that the number of electrodes of the first connection structure was 75 pairs, the number of electrodes of the second connection structure was 50 pairs, and the number of electrodes of the third connection structure was 38 pairs. A connection structure was obtained.
- Yt and Ya of the first main electrode are as follows.
- connection structure 7.5 mm
- First connection structure: Ya 0.05 mm
- Second connection structure: Ya 0.075 mm
- Third connection structure: Ya 0.1 mm
- Example 6 First, second, and third connection structures are fabricated in the same manner as in Example 1 except that a glass epoxy substrate that does not include alignment electrodes and a flexible printed circuit board that does not include alignment electrodes are used. did.
- Example 7 A glass epoxy substrate (size: 30 ⁇ 30 mm thickness: 0.1 ⁇ m) having a 5 mm square semiconductor chip (thickness: 400 ⁇ m) having an electrode size / interelectrode space of 100 ⁇ m / 100 ⁇ m, 75 ⁇ m / 75 ⁇ m, and 50 ⁇ m / 50 ⁇ m, and an electrode facing it.
- the first, second, and third connection structures were obtained in the same manner as in Example 1 except that 4 mm) was used.
- Example 8 The components shown in Table 1 below were blended in the blending amounts shown in Table 1 below to obtain anisotropic conductive paste.
- First, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.
- Example 1 In the same manner as in Example 1 except that a pressure of 2 MPa was applied on the flexible printed circuit board when the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. First, second and third connection structures were obtained.
- phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so that the solid content was 50% by weight to obtain a solution.
- MEK methyl ethyl ketone
- Ingredients other than the phenoxy resin shown in Table 2 below were blended with the blending amounts shown in Table 2 below and the total amount of the above solution, and after stirring for 5 minutes at 2000 rpm using a planetary stirrer, a bar coater was used. It was used and coated on a release PET (polyethylene terephthalate) film so that the thickness after drying was 30 ⁇ m.
- An anisotropic conductive film was obtained by removing MEK by vacuum drying at room temperature.
- the 1st, 2nd, 3rd connection structure was obtained like Example 1 except having used an anisotropic conductive film.
- Example 5 A glass epoxy substrate (size: 30 ⁇ 30 mm thickness: 0.1 ⁇ m) having a 5 mm square semiconductor chip (thickness: 400 ⁇ m) having an electrode size / interelectrode space of 100 ⁇ m / 100 ⁇ m, 75 ⁇ m / 75 ⁇ m, and 50 ⁇ m / 50 ⁇ m, and an electrode facing it. 4 mm), and when the anisotropic conductive paste layer was cured, the first, second, and third connection structures were formed in the same manner as in Example 7 except that a pressure of 10 MPa was applied. Obtained.
- Example 6 The components shown in Table 2 below were blended in the blending amounts shown in Table 2 to obtain anisotropic conductive paste.
- First, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.
- Viscosity The viscosity of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) at 25 ° C. and 5 rpm.
- connection distance distance between electrodes
- solder placement accuracy on electrodes In the cross sections (cross sections in the direction shown in FIG. 1) of the obtained first, second, and third connection structures, the solder is disposed between the electrodes in a total area of 100%. The area (%) of the solder remaining in the cured product away from the solder portion was evaluated. In addition, the average of the area in five cross sections was computed. The placement accuracy of the solder on the electrode was determined according to the following criteria.
- connection resistance between the upper and lower electrodes was measured by the four-terminal method, respectively. .
- the average value of connection resistance was calculated. Note that the connection resistance can be obtained by measuring the voltage when a constant current is passed from the relationship of voltage current ⁇ resistance. The conduction reliability was determined according to the following criteria.
- ⁇ Average value of connection resistance is 10 7 ⁇ or more ⁇ : Average value of connection resistance is 10 6 ⁇ or more, less than 10 7 ⁇ ⁇ : Average value of connection resistance is 10 5 ⁇ or more, less than 10 6 ⁇ ⁇ : Connection The average resistance is less than 10 5 ⁇
- connection structures obtained in Examples 1 to 11 a portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode was seen.
- the solder portion in the connection portion is arranged in 50% or more of the area of 100% of the portion where the first electrode and the second electrode face each other.
- FIGS. 7A, 7B and 7C show an example of a connection structure included in the embodiment of the present invention.
- 7A and 7B are cross-sectional images
- FIG. 7C is a planar image.
- 7A, 7 ⁇ / b> B, and 7 ⁇ / b> C it can be seen that there is no solder (solder particles) remaining in the cured product away from the solder portion disposed between the electrodes.
- FIGS. 8A, 8B, and 8C show an example of a connection structure that is not included in the embodiment of the present invention.
- This connection structure is a connection structure obtained by applying pressure in the step of arranging the second connection target member.
- 8A and 8B are cross-sectional images
- FIG. 8C is a planar image.
- 8A, 8B, and 8C a plurality of solders (solder particles) remaining in the cured product away from the solder portions disposed between the electrodes exist on the side of the solder portions.
Landscapes
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
- Conductive Materials (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
上記はんだ粒子は、はんだを導電性の外表面に有する。上記はんだ粒子は、中心部分及び導電性の外表面とのいずれもがはんだにより形成されている。
上記熱硬化性化合物としては、オキセタン化合物、エポキシ化合物、エピスルフィド化合物、(メタ)アクリル化合物、フェノール化合物、アミノ化合物、不飽和ポリエステル化合物、ポリウレタン化合物、シリコーン化合物及びポリイミド化合物等が挙げられる。なかでも、導電ペーストの硬化性及び粘度をより一層良好にし、接続信頼性をより一層高める観点から、エポキシ化合物が好ましい。
上記熱硬化剤は、上記熱硬化性化合物を熱硬化させる。上記熱硬化剤としては、イミダゾール硬化剤、アミン硬化剤、フェノール硬化剤、ポリチオール硬化剤、酸無水物、熱カチオン開始剤及び熱ラジカル発生剤等が挙げられる。上記熱硬化剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。
上記導電ペーストは、フラックスを含むことが好ましい。フラックスの使用により、はんだを電極上により一層効果的に配置することができる。該フラックスは特に限定されない。フラックスとして、はんだ接合等に一般的に用いられているフラックスを使用できる。上記フラックスとしては、例えば、塩化亜鉛、塩化亜鉛と無機ハロゲン化物との混合物、塩化亜鉛と無機酸との混合物、溶融塩、リン酸、リン酸の誘導体、有機ハロゲン化物、ヒドラジン、有機酸及び松脂等が挙げられる。上記フラックスは1種のみが用いられてもよく、2種以上が併用されてもよい。
上記導電ペーストは、フィラーを含むことが好ましい。フィラーの使用により、導電ペーストの硬化物の潜熱膨張を抑制できる。上記フィラーは1種のみが用いられてもよく、2種以上が併用されてもよい。
上記導電ペーストは、必要に応じて、例えば、充填剤、増量剤、軟化剤、可塑剤、重合触媒、硬化触媒、着色剤、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、帯電防止剤及び難燃剤等の各種添加剤を含んでいてもよい。
ビスフェノールFと1,6-ヘキサンジオールジグリシジルエーテル、及びビスフェノールF型エポキシ樹脂との反応物(ポリマーA)の合成:
ビスフェノールF(4,4’-メチレンビスフェノールと2,4’-メチレンビスフェノールと2,2’-メチレンビスフェノールとを重量比で2:3:1で含む)72重量部、1,6-ヘキサンジオールジグリシジルエーテル70重量部、ビスフェノールF型エポキシ樹脂(DIC社製「EPICLON EXA-830CRP」)30重量部を、3つ口フラスコに入れ、窒素フロー下にて、150℃で溶解させた。その後、水酸基とエポキシ基との付加反応触媒であるテトラーn-ブチルスルホニウムブロミド0.1重量部を添加し、窒素フロー下にて、150℃で6時間、付加重合反応させることにより反応物(ポリマーA)を得た。
平均粒子径10μmのジビニルベンゼン樹脂粒子(積水化学工業社製「ミクロパールSP-210」)を無電解ニッケルめっきし、樹脂粒子の表面上に厚さ0.1μmの下地ニッケルめっき層を形成した。次いで、下地ニッケルめっき層が形成された樹脂粒子を電解銅めっきし、厚さ1μmの銅層を形成した。更に、錫及びビスマスを含有する電解めっき液を用いて、電解めっきし、厚さ3μmのはんだ層を形成した。このようにして、樹脂粒子の表面上に厚み1μmの銅層が形成されており、該銅層の表面に厚み3μmのはんだ層(錫:ビスマス=43重量%:57重量%)が形成されている導電性粒子1を作製した。
(1)異方性導電ペーストの作製
下記の表1に示す成分を下記の表1に示す配合量で配合して、異方性導電ペーストを得た。
L/Sが50μm/50μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材、線膨張率12ppm/℃(第1の主電極の長さ方向及び幅方向での線膨張率(以下同様)))を用意した。また、L/Sが50μm/50μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材、線膨張率16ppm/℃(第2の主電極の長さ方向及び幅方向での線膨張率(以下同様))))を用意した。第1の主電極について、Yt=10mm、Ya=0.05mmである。
L/Sが75μm/75μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材、線膨張率12ppm/℃)を用意した。また、L/Sが75μm/75μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材、線膨張率16ppm/℃)を用意した。第1の主電極について、Yt=10mm、Ya=0.075mmである。
L/Sが100μm/100μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材、線膨張率12ppm/℃)を用意した。また、L/Sが100μm/100μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材、線膨張率16ppm/℃)を用意した。第1の主電極について、Yt=10mm、Ya=0.1mmである。
第1の接続構造体の電極数を75対、第2の接続構造体の電極数を50対、第3の接続構造体の電極数を38対としたこと以外は実施例1と同様にして、接続構造体を得た。
第1の接続構造体:Ya=0.05mm
第2の接続構造体:Ya=0.075mm
第3の接続構造体:Ya=0.1mm
位置合わせ電極を備えていないガラスエポキシ基板と位置合わせ電極を備えていないフレキシブルプリント基板とを用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を作製した。
電極サイズ/電極間スペースが、100μm/100μm、75μm/75μm、50μm/50μmである、5mm角の半導体チップ(厚み400μm)と、それに対向する電極を有するガラスエポキシ基板(サイズ30×30mm厚み0.4mm)を用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
下記の表1に示す成分を下記の表1に示す配合量で配合して、異方性導電ペーストを得た。得られた異方性導電ペーストを用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
異方性導電ペースト層の上面に上記フレキシブルプリント基板を、電極同士が対向するように積層する際に、フレキシブルプリント基板上に2MPaの圧力を付与したこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
異方性導電ペースト層を硬化させる際に、フレキシブルプリント基板上に2MPaの圧力を付与したこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
異方性導電ペースト層の上面に上記フレキシブルプリント基板を、電極同士が対向するように積層する際に、フレキシブルプリント基板上に2MPaの圧力を付与したこと、並びに異方性導電ペースト層の上面に上記フレキシブルプリント基板を、電極同士が対向するように積層した後に加圧状態を維持し、異方性導電ペースト層を硬化させる際に、フレキシブルプリント基板上に2MPaの圧力を付与したこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
フェノキシ樹脂(新日鉄住金化学社製「YP-50S」)10重量部をメチルエチルケトン(MEK)に固形分が50重量%となるように溶解させて、溶解液を得た。下記の表2に示すフェノキシ樹脂を除く成分を下記の表2に示す配合量と、上記溶解液の全量とを配合して、遊星式攪拌機を用いて2000rpmで5分間攪拌した後、バーコーターを用いて乾燥後の厚みが30μmになるよう離型PET(ポリエチレンテレフタレート)フィルム上に塗工した。室温で真空乾燥することで、MEKを除去することにより、異方性導電フィルムを得た。
電極サイズ/電極間スペースが、100μm/100μm、75μm/75μm、50μm/50μmである、5mm角の半導体チップ(厚み400μm)と、それに対向する電極を有するガラスエポキシ基板(サイズ30×30mm厚み0.4mm)を用いたこと、並びに異方性導電ペースト層を硬化させる際に、10MPaの圧力を付与したこと以外は、実施例7と同様にして第1,第2,第3の接続構造体を得た。
下記の表2に示す成分を下記の表2に示す配合量で配合して、異方性導電ペーストを得た。得られた異方性導電ペーストを用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
(1)粘度
異方性導電ペーストの粘度を、E型粘度計(東機産業社製)を用いて、25℃及び5rpmの条件で測定した。
25℃からはんだ粒子の融点又は導電性粒子の表面のはんだの融点までの温度領域での、異方性導電ペーストの最低溶融粘度を測定した。
得られた第1の接続構造体を断面観察することにより、上下の電極が対向している位置における接続部の距離D1(電極間の間隔)を評価した。
得られた第1の接続構造体を平面視して、第1,第2の電極が対向している部分の大きさS1と、第1,第2の電極が対向していない部分の大きさS2とを評価した。比(大きさS1/大きさS2)を求めた。
得られた第1,第2,第3の接続構造体を断面観察することにより、上下の電極の位置ずれの最大距離を評価した。
得られた第1,第2,第3の接続構造体の断面(図1に示す方向の断面)において、はんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだの面積(%)を評価した。なお、5つの断面における面積の平均を算出した。電極上のはんだの配置精度を下記の基準で判定した。
○○:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が0%
○:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が0%を超え、10%以下
△:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が10%を超え、30%以下
×:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が30%を超える
得られた第1,第2,第3の接続構造体(n=15個)において、上下の電極間の接続抵抗をそれぞれ、4端子法により測定した。接続抵抗の平均値を算出した。なお、電圧=電流×抵抗の関係から、一定の電流を流した時の電圧を測定することにより接続抵抗を求めることができる。導通信頼性を下記の基準で判定した。
○○:接続抵抗の平均値が8.0Ω以下
○:接続抵抗の平均値が8.0Ωを超え、10.0Ω以下
△:接続抵抗の平均値が10.0Ωを超え、15.0Ω以下
×:接続抵抗の平均値が15.0Ωを超える
得られた第1,第2,第3の接続構造体(n=15個)において、温度85℃、及び湿度85%の雰囲気中に100時間放置後、隣接する電極間に、5Vを印加し、抵抗値を25箇所で測定した。絶縁信頼性を下記の基準で判定した。
○○:接続抵抗の平均値が107Ω以上
○:接続抵抗の平均値が106Ω以上、107Ω未満
△:接続抵抗の平均値が105Ω以上、106Ω未満
×:接続抵抗の平均値が105Ω未満
2…第1の接続対象部材
2a…第1の電極
3…第2の接続対象部材
3a…第2の電極
4,4X…接続部
4A,4XA…はんだ部
4B,4XB…硬化物部
11…導電ペースト
11A…はんだ粒子
11B…熱硬化性成分
51,51X,51Y…接続構造体
52,52X,52Y…第1の接続対象部材
52a…第1の電極
52aa…位置合わせ用の第1の電極
52ab…第1の主電極
53,53X,53Y…第2の接続対象部材
53a…第2の電極
53aa…位置合わせ用の第2の電極
53ab…第2の主電極
54,54X,54Y…接続部
54A,54XA,54YA…はんだ部
54B,54XB,54YB…硬化物部
C…角部
Claims (8)
- 複数のはんだ粒子と、熱硬化性成分とを含む導電ペーストを用いて、少なくとも1つの第1の電極を表面に有する第1の接続対象部材の表面上に、前記導電ペーストを配置する工程と、
前記導電ペーストの前記第1の接続対象部材側とは反対の表面上に、少なくとも1つの第2の電極を表面に有する第2の接続対象部材を、前記第1の電極と前記第2の電極とが対向するように配置する工程と、
前記はんだ粒子の融点以上かつ前記熱硬化性成分の硬化温度以上に前記導電ペーストを加熱することで、前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部を、前記導電ペーストにより形成する工程とを備え、
前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電ペーストには、前記第2の接続対象部材の重量が加わる、接続構造体の製造方法。 - 前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル、又はリジッドフレキシブル基板である、請求項1に記載の接続構造体の製造方法。
- 前記第1の電極と前記第2の電極とが対向している位置における前記接続部の距離を3μm以上、40μm以下にする、請求項1又は2に記載の接続構造体の製造方法。
- 前記接続部において、前記第1の電極と前記第2の電極とが対向している部分の大きさを、前記第1の電極と前記第2の電極とが対向していない部分の大きさの2倍以上、40倍以下にする、請求項1~3のいずれか1項に記載の接続構造体の製造方法。
- 25℃での粘度が、10Pa・s以上、800Pa・s以下である、請求項1~4のいずれか1項に記載の接続構造体の製造方法。
- 前記はんだ粒子の融点以下の温度領域での粘度の最低値が、0.1Pa・s以上、10Pa・s以下である、請求項1~5のいずれか1項に記載の接続構造体の製造方法。
- 前記接続部が角部を有し、
前記第1の接続対象部材が、前記第1の電極として、前記角部の内側に位置合わせ用の第1の電極を有し、
前記第2の接続対象部材が、前記第2の電極として、前記角部の内側に位置合わせ用の第2の電極を有し、
前記位置合わせ用の第1の電極及び前記位置合わせ用の第2の電極と、前記角部の先端との最短距離が75μm以上、3000μm以下である、請求項1~6のいずれか1項に記載の接続構造体の製造方法。 - 前記第1の接続対象部材が、前記第1の電極として、長さ方向と幅方向とを有する複数の第1の主電極を有し、
前記第2の接続対象部材が、前記第2の電極として、長さ方向と幅方向とを有する複数の第2の主電極を有し、
前記第1の主電極の長さ方向及び幅方向での前記第1の接続対象部材の線膨張率と前記第2の主電極の長さ方向及び幅方向での前記第2の接続対象部材の線膨張率との差をC:ppm/℃とし、前記接続部を形成する際の前記導電ペーストの加熱温度をT:℃とし、前記第1の主電極の幅方向において複数の前記第1の主電極全体での寸法をYt:mmとし、複数の前記第1の主電極の1つあたりの幅方向の寸法をYa:mmとしたとき、式:C×T/1000000×Yt<0.5×Yaを満たす、請求項1~7のいずれか1項に記載の接続構造体の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167004486A KR102360487B1 (ko) | 2014-02-24 | 2015-02-17 | 접속 구조체의 제조 방법 |
CN201580001667.6A CN105493207B (zh) | 2014-02-24 | 2015-02-17 | 连接结构体的制造方法 |
JP2015512417A JP5819026B1 (ja) | 2014-02-24 | 2015-02-17 | 接続構造体の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014033213 | 2014-02-24 | ||
JP2014-033213 | 2014-02-24 | ||
JP2014047147 | 2014-03-11 | ||
JP2014-047147 | 2014-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015125779A1 true WO2015125779A1 (ja) | 2015-08-27 |
Family
ID=53878281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/054299 WO2015125779A1 (ja) | 2014-02-24 | 2015-02-17 | 接続構造体の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5819026B1 (ja) |
KR (1) | KR102360487B1 (ja) |
CN (1) | CN105493207B (ja) |
TW (1) | TWI647709B (ja) |
WO (1) | WO2015125779A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105086902A (zh) * | 2015-09-01 | 2015-11-25 | 烟台德邦科技有限公司 | 一种非流动环氧底部填充材料及其制备方法 |
CN107614192A (zh) * | 2015-11-17 | 2018-01-19 | 积水化学工业株式会社 | 焊锡接合材料、连接结构体及连接结构体的制造方法 |
JP2019212621A (ja) * | 2018-05-30 | 2019-12-12 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6752669B2 (ja) * | 2016-09-28 | 2020-09-09 | エルジー ディスプレイ カンパニー リミテッド | 電子部品の実装方法、電子部品の接合構造、基板装置、ディスプレイ装置、ディスプレイシステム |
JP2020045463A (ja) * | 2018-09-21 | 2020-03-26 | 株式会社タムラ製作所 | 異方導電性接着剤およびそれを用いた電子基板の製造方法 |
JP7220558B2 (ja) | 2018-12-26 | 2023-02-10 | エルジー ディスプレイ カンパニー リミテッド | 表示装置及び表示装置の製造方法 |
KR20230110912A (ko) | 2022-01-17 | 2023-07-25 | 주식회사 에스켐 | 유기 발광 재료용 나프토 싸이오펜계 화합물의 제조 방법 |
WO2023189611A1 (ja) * | 2022-03-29 | 2023-10-05 | 日東電工株式会社 | 接続構造体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007280999A (ja) * | 2006-04-03 | 2007-10-25 | Matsushita Electric Ind Co Ltd | 部品接合方法ならびに部品接合構造 |
WO2011115105A1 (ja) * | 2010-03-17 | 2011-09-22 | 積水化学工業株式会社 | 導電性粒子、導電性粒子の製造方法、異方性導電材料及び接続構造体 |
JP2012216770A (ja) * | 2011-03-30 | 2012-11-08 | Tamura Seisakusho Co Ltd | 異方性導電性ペーストおよびそれを用いた電子部品の接続方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2403601A (en) * | 1999-12-27 | 2001-07-09 | Sumitomo Bakelite Company Limited | Hardening flux, soldering resist, semiconductor package reinforced by hardening flux, semiconductor device and method of producing semiconductor package and semiconductor device |
CN100442468C (zh) * | 2004-09-15 | 2008-12-10 | 松下电器产业株式会社 | 倒装片安装方法 |
EP1830399A4 (en) * | 2004-12-17 | 2012-07-11 | Panasonic Corp | RESIN COMPOSITION FOR FLIP CHIP CAPSULATION AND RESIN COMPOSITION FOR FORMING A BULB |
KR101084777B1 (ko) * | 2005-02-03 | 2011-11-21 | 파나소닉 주식회사 | 플립 칩 실장체와 그 실장 방법 및 범프 형성 방법 |
JPWO2008023452A1 (ja) | 2006-08-25 | 2010-01-07 | 住友ベークライト株式会社 | 接着テープ、接合体および半導体パッケージ |
JP4432949B2 (ja) * | 2006-09-15 | 2010-03-17 | パナソニック株式会社 | 電気部品の接続方法 |
CN102559071A (zh) * | 2007-08-08 | 2012-07-11 | 日立化成工业株式会社 | 粘接剂组合物、膜状粘接剂和电路部件的连接结构 |
JP2010272514A (ja) * | 2009-04-20 | 2010-12-02 | Idemitsu Kosan Co Ltd | 導電性酸化物微粒子分散組成物、導電性塗料組成物、及び導電性膜 |
US8070043B1 (en) * | 2010-12-02 | 2011-12-06 | Rohm And Haas Electronic Materials Llc | Curable flux composition and method of soldering |
JP5741188B2 (ja) * | 2011-04-27 | 2015-07-01 | デクセリアルズ株式会社 | 接続構造体の製造方法 |
KR101924669B1 (ko) * | 2011-06-13 | 2018-12-03 | 센주긴조쿠고교 가부시키가이샤 | 솔더 페이스트의 인쇄 방법 및 솔더 페이스트 |
-
2015
- 2015-02-17 WO PCT/JP2015/054299 patent/WO2015125779A1/ja active Application Filing
- 2015-02-17 KR KR1020167004486A patent/KR102360487B1/ko active IP Right Grant
- 2015-02-17 CN CN201580001667.6A patent/CN105493207B/zh active Active
- 2015-02-17 JP JP2015512417A patent/JP5819026B1/ja active Active
- 2015-02-24 TW TW104105916A patent/TWI647709B/zh active
- 2015-09-28 JP JP2015189610A patent/JP2015233162A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007280999A (ja) * | 2006-04-03 | 2007-10-25 | Matsushita Electric Ind Co Ltd | 部品接合方法ならびに部品接合構造 |
WO2011115105A1 (ja) * | 2010-03-17 | 2011-09-22 | 積水化学工業株式会社 | 導電性粒子、導電性粒子の製造方法、異方性導電材料及び接続構造体 |
JP2012216770A (ja) * | 2011-03-30 | 2012-11-08 | Tamura Seisakusho Co Ltd | 異方性導電性ペーストおよびそれを用いた電子部品の接続方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105086902A (zh) * | 2015-09-01 | 2015-11-25 | 烟台德邦科技有限公司 | 一种非流动环氧底部填充材料及其制备方法 |
CN107614192A (zh) * | 2015-11-17 | 2018-01-19 | 积水化学工业株式会社 | 焊锡接合材料、连接结构体及连接结构体的制造方法 |
JPWO2017086335A1 (ja) * | 2015-11-17 | 2018-08-30 | 積水化学工業株式会社 | はんだ接合材料、接続構造体及び接続構造体の製造方法 |
JP7011892B2 (ja) | 2015-11-17 | 2022-02-10 | 積水化学工業株式会社 | はんだ接合材料及び接続構造体の製造方法 |
JP2022050636A (ja) * | 2015-11-17 | 2022-03-30 | 積水化学工業株式会社 | はんだ接合材料、接続構造体及び接続構造体の製造方法 |
JP2019212621A (ja) * | 2018-05-30 | 2019-12-12 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
JP7271312B2 (ja) | 2018-05-30 | 2023-05-11 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI647709B (zh) | 2019-01-11 |
CN105493207B (zh) | 2018-05-25 |
JPWO2015125779A1 (ja) | 2017-03-30 |
KR102360487B1 (ko) | 2022-02-10 |
CN105493207A (zh) | 2016-04-13 |
KR20160125343A (ko) | 2016-10-31 |
JP5819026B1 (ja) | 2015-11-18 |
JP2015233162A (ja) | 2015-12-24 |
TW201535418A (zh) | 2015-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5819026B1 (ja) | 接続構造体の製造方法 | |
JP6329144B2 (ja) | 導電ペースト及び導電ペーストの製造方法 | |
KR102392995B1 (ko) | 도전 페이스트, 접속 구조체 및 접속 구조체의 제조 방법 | |
WO2015125778A1 (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
WO2016043265A1 (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
JP5851071B1 (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
JP5966101B1 (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
JP5966102B1 (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
JP2016127010A (ja) | 異方性導電材料、接続構造体及び接続構造体の製造方法 | |
JP2016126878A (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
JP2016126877A (ja) | 導電ペースト、接続構造体及び接続構造体の製造方法 | |
WO2016013474A1 (ja) | 接続構造体の製造方法 | |
WO2019203053A1 (ja) | 導電材料、接続構造体及び接続構造体の製造方法 | |
JP2019160788A (ja) | 導電材料、接続構造体及び接続構造体の製造方法 | |
JP6514610B2 (ja) | 接続構造体の製造方法 | |
WO2016035637A1 (ja) | 接続構造体の製造方法 | |
JP2016066610A (ja) | 接続構造体の製造方法 | |
JP2016076355A (ja) | 接続構造体の製造方法及び接続構造体 | |
JP2019200964A (ja) | 導電材料、接続構造体及び接続構造体の製造方法 | |
JP2016066609A (ja) | 接続構造体の製造方法及び接続構造体 | |
JP2016126876A (ja) | 導電材料、接続構造体及び接続構造体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201580001667.6 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2015512417 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15751772 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20167004486 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15751772 Country of ref document: EP Kind code of ref document: A1 |