WO2015087505A1 - インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア - Google Patents
インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア Download PDFInfo
- Publication number
- WO2015087505A1 WO2015087505A1 PCT/JP2014/005919 JP2014005919W WO2015087505A1 WO 2015087505 A1 WO2015087505 A1 WO 2015087505A1 JP 2014005919 W JP2014005919 W JP 2014005919W WO 2015087505 A1 WO2015087505 A1 WO 2015087505A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- carrier
- shielding
- predetermined range
- evaporation
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Definitions
- the present invention relates to a film forming preparation method for an in-line type film forming apparatus, an in-line type film forming apparatus, and a carrier.
- this type of in-line type film forming apparatus sequentially deposits a low molecular material film or a metal film on one side (film forming surface) of a substrate to be processed such as a glass substrate by a vacuum deposition method (specifically, , Hole injecting and transporting layer, light emitting layer, electron injecting and transporting layer, cathode, etc.) and are used to produce organic electroluminescence devices.
- a vacuum deposition method specifically, Hole injecting and transporting layer, light emitting layer, electron injecting and transporting layer, cathode, etc.
- This includes a vacuum chamber to which a vacuum pump is connected, and a plurality of evaporation sources are arranged in the vacuum chamber, and the substrate is transferred along the direction in which each evaporation source is arranged.
- Substrate transfer means is provided.
- the substrate transfer means When film formation is performed on the lower surface (film formation surface) of the substrate from the evaporation source to the substrate, the substrate transfer means is downstream from the position facing the upstream evaporation source and the carrier that holds the lower surface of the substrate open.
- Drive means for continuously (or intermittently) driving the carrier to a position facing the side evaporation source. Then, the substrate is transferred from the upstream side to the downstream side by the substrate transfer means, and the evaporation material evaporated by the evaporation source is supplied to the lower surface of the substrate when passing the position facing each evaporation source.
- Each single layer film is formed to form a laminated film (see, for example, Patent Document 1). In this case, if the evaporation material type of each vapor deposition source is changed, various films can be laminated with a predetermined film thickness.
- the position facing each evaporation source If the thickness of the thin film formed on each substrate does not fall within a predetermined range when passing through the substrate, the characteristics of the laminated film will change, and this will reduce the product yield.
- the film thickness of each thin film formed on the substrate is determined by the amount of evaporation material supplied from the evaporation source.For example, when the evaporation material is evaporated by a resistance heating method, the heating temperature of the evaporation material is adjusted, The supply amount to the substrate can be appropriately controlled.
- the evaporation material evaporated by the evaporation source is not only the substrate and the shutter, but also the vacuum chamber such as a deposition plate provided around the evaporation source or in the vacuum chamber. It also adheres and accumulates on the surface of the parts existing inside, and this adhesion and deposition may adversely affect mass production. For this reason, not only the periodic resupply of the evaporating material to be reduced, but also the above parts are periodically replaced (so-called maintenance). Then, after the maintenance is completed, prior to the start of mass production, it is reconfirmed whether the film thickness distribution from each evaporation source and the film formation rate are within a predetermined range (film formation preparation).
- the heating means of the evaporation source is operated in a state where the shutter is in the shielding position, a plurality of carriers on which the substrate is set are prepared, and each carrier is moved from the upstream side to the downstream side by the substrate transfer means At this time, the shutter of each evaporation source is appropriately moved to the retracted position, and the evaporation material from one evaporation source is supplied to one substrate to form a single layer film, Conventionally, a sample for measuring a film thickness distribution, a film formation rate, or the like is manufactured.
- the present invention has an object to provide a low-cost in-line type film forming apparatus film forming preparation method and an in-line type film forming apparatus that can shorten the work time for film forming preparation. It is.
- the in-line film forming apparatus of the present invention includes a step of forming a measurement sample by forming a single layer film of an evaporation material supplied from each evaporation source on the substrate. Is set on the carrier and transferred continuously or intermittently from the position facing the upstream evaporation source to the position facing the downstream evaporation source, and a predetermined range on one side of the substrate is selectively selected as the carrier.
- each shielding unit When a substrate is transported by a carrier from the upstream side to the downstream side, a predetermined range that is shielded by each shielding unit is sequentially changed to use a single substrate. Supplied from each evaporation source in the plane of Single layer film of outgoing material is characterized in that it is s deposited respectively.
- the shielding means when one of the shielding means is appropriately driven when passing through (or before) the position facing each evaporation source during the transfer from the upstream side to the downstream side with the substrate set on the carrier. Since the range in which the evaporation material is supplied within the substrate surface can be changed as appropriate, the single-layer film of the evaporation material supplied from a plurality of evaporation sources is formed by changing the film formation range within the single substrate surface. The obtained measurement sample is obtained. As a result, the work time for film formation preparation can be shortened compared to the above-described conventional example using a plurality of substrates, and since only a single substrate is used, the cost is low. This is advantageous when a large number of evaporation sources are provided.
- a vacuum chamber capable of forming a vacuum atmosphere is provided, and a plurality of evaporation sources are arranged in the vacuum chamber, and each evaporation source is arranged in the direction in which the evaporation sources are arranged.
- the substrate transfer means opens and holds one side of the substrate facing each evaporation source, and the carrier upstream.
- Drive means for continuously or intermittently driving from a position facing the evaporation source on the side to a position facing the evaporation source on the downstream side, and the carrier can selectively shield a predetermined range on one side of the substrate.
- a moving means for moving the shielding means between a shielding position that shields a predetermined range on one side of the substrate and an open position where the predetermined range faces the evaporation source.
- the shielding means is composed of a plurality of slit holes opened on the lower surface thereof and a shielding plate for closing each slit hole, and the shielding means is arranged between the shielding position and the open position by the moving means.
- a moved configuration can be employed.
- the shielding means has a plurality of rollers and a single shielding plate that covers the lower surface of the carrier and is wound around each roller, and an opening that exposes a predetermined range of the substrate set on the carrier on the shielding plate. And a configuration in which the position of the opening is shifted in the substrate plane by the moving means can be employed.
- the carrier of the present invention used to open one side of the substrate to be processed by the in-line type film forming apparatus and transfer the substrate includes a shielding unit capable of selectively shielding a predetermined range on one side of the substrate.
- FIG. 2C is a cross-sectional view taken along the line cc in FIG.
- Sectional drawing explaining the procedure which forms into a film using the carrier shown in FIG. Sectional drawing explaining opening and closing of the shielding board at the time of film-forming using the carrier shown in FIG. (A)
- (b) is sectional drawing explaining the procedure which forms into a film using the carrier which concerns on the modification used for implementation of the film-forming preparation method of this invention.
- (A)-(c) is a figure explaining the carrier which concerns on another modification. The figure explaining the carrier which concerns on another modification.
- substrate S a substrate to be processed glass substrate
- carrier SC 1 carrier surface
- an embodiment of the in-line type film forming apparatus of the present invention will be described by taking as an example the case where a plurality of thin films are formed by vacuum deposition.
- the evaporation source side to be described later is “down”
- the direction from the evaporation source to the substrate S is “up”
- the substrate S moves from the right side to the left side in FIGS. It is assumed that terms indicating directions are used based on this.
- DM is an in-line type film forming apparatus (hereinafter referred to as “film forming apparatus DM”) of this embodiment, and the film forming apparatus DM is formed in the film forming chamber 1a. in the lateral direction to define a comprises a first vacuum chamber 1 1 in the longitudinal. The first longitudinal end of the vacuum chamber 1 1 through a gate valve GV, ready chamber 1b, the second, third each vacuum chamber 1 2, 1 3 which respectively define 1c is continuously provided .
- film DM in-line type film forming apparatus
- the second vacuum chamber 1 2, the load lock chamber 1d, fourth to respectively define 1e, with the fifth vacuum chamber 1 4, 1 5 are respectively provided continuously via a gate valve GV, the third vacuum chamber 1 3, 6, each of the vacuum chamber 1 6, 1 7 of the seventh are respectively provided continuously through the gate valve GV defining load lock chamber 1f, a 1g.
- Each of the first to seventh vacuum chambers 1 1 to 17 is connected to a known vacuum pump so that it can be evacuated from atmospheric pressure to a predetermined pressure (a vacuum atmosphere can be formed). Yes.
- the substrate S is carried into the vacuum chamber 1 5 of the fifth to carrier SC 1 which is carried into the fourth vacuum chamber 1 4 sets, to transfer to the first vacuum chamber 1 1. Then, those having passed through the first vacuum chamber 1 1 is transferred to a third each vacuum chamber 1 3, 6, each of the vacuum chamber 1 6 7, 1 7 to the substrate S and the carrier SC 1 is a separate To be recovered.
- a method for carrying in / out the substrate W and the carrier SC 1 in the load lock chambers 1d to 1g, a method for setting and collecting the substrate S and the carrier SC 1 in the preparation chambers 1b and 1c, and the like are as follows. Since a known method using can be used, detailed description thereof is omitted here.
- the evaporation material evaporated by the evaporation sources 2 1 , 2 2 , 2 3 is appropriately selected according to the composition of each thin film to be laminated on the substrate S, and is also referred to as the evaporation sources 2 1 , 2 2 , 2 3.
- a known resistance heating type or electron gun type is used depending on the type of evaporation material.
- the evaporation material 2 1 , 2 2 , 2 3 when the evaporation material 2 1 , 2 2 , 2 3 is heated to evaporate, the evaporation may not be stable at the beginning of heating, so that the evaporation material covers the evaporation source and reaches the substrate S.
- a shutter 21 for preventing the above is provided.
- a substrate transfer means 3 for transferring the substrate S along the left-right direction in which the respective evaporation sources are arranged is provided in the upper part of the first vacuum chamber 11.
- Substrate transfer means 3 is provided with a carrier SC 1, a drive roller DR of the drive means is column set at respective equally spaced first vacuum chamber 1 1 of the upper wall so as to form a pair with each other.
- the drive roller DR is a known one that is configured to be rotationally driven at the same rotational speed in synchronization.
- the carrier SC 1 as shown in FIG. 1 (c), has a carrier body 31 in which the substrate storing holes 31a are opened corresponding to the contour of the substrate S in the center, the inner edge of the lower end of the substrate housing hole 31a is When an extension piece 32 extending inward is formed and dropped into the substrate housing hole 31a from the upper side, the peripheral edge of the substrate S is supported by the extension piece 32, and the inner part thereof is the film-forming surface.
- flange portions 33 extending outward are formed on the outer edge of the upper end of the carrier body 31 positioned in the direction orthogonal to the left-right direction, and the lower surface of the flange portion 33 is frictionally engaged with the driving roller DR. By doing so, it is transferred to the downstream side. Then, in the film forming chamber 1a, it supported substrate S by opening the lower surface to the carrier SC 1 is upstream (in FIG.
- film formation preparation is performed by forming a single-layer film from each of the evaporation sources 2 1 , 2 2 , and 2 3 on the substrate S under the conditions of mass production to produce a measurement sample and evaluating it. Therefore, it is necessary to reduce the work time for film formation preparation and to reduce the cost.
- the evaporation material evaporated by each evaporation source evaporation source 2 1 , 2 2 , 2 3 by changing the film formation range in the single substrate S plane using the carrier SC 2 for film formation preparation is used.
- Single-layer films were formed respectively.
- the carrier SC 2 has substantially the same form as the carrier SC 1 used for mass production, but a substrate storage portion 311 corresponding to the outline of the substrate S is recessed in the center.
- a plurality of slit holes 312 extending in the direction orthogonal to the left-right direction are formed at equal intervals in the left-right direction on the lower surface of the substrate storage portion 311.
- shielding plates 34 1 , 34 2 , and 34 3 are provided as shielding means so as to block the slit holes 312 respectively. Then, the slit holes 312 are selectively closed by each of the shielding plates 34 1 , 34 2 , and 34 3 to shield the predetermined area on the lower surface of the substrate S, and the predetermined area is the evaporation source 2 1 , 2 2 , 2 3 .
- a moving means 4 is provided to move the shielding plates 34 1 , 34 2 , 34 3 separately from the open positions that they face.
- the moving means 4 includes a rotating shaft 41 to which one side of the shielding plates 34 1 , 34 2 , and 34 3 positioned in a direction orthogonal to the left-right direction is fixed, a pair of bearing portions 42 a and 42 b that support the rotating shaft 41, A carrier 43 for attracting and holding the driven clutch 43 provided at the tip of the rotating shaft 41 projecting outward from one of the bearing portions 42a and the shielding plates 34 1 , 34 2 , 34 3 in the shielding position or the open position. Magnets 44a and 44b provided on the lower surface of the main body.
- Moving means 4 further comprises a drive shaft 45 which is inserted into the through hole 11 formed in the first vacuum chamber 1 1 of the inner wall (see FIG. 4).
- the through-hole 11 (the position where the drive shaft 45, and hence the drive-side clutch 46 described later) is provided is upstream of the upstream evaporation sources 2 1 , 2 2 , 2 3 and the respective evaporation sources 2 1 , 2 2 , 2 and 3 are formed between each other (see FIG. 3).
- the first end of the vacuum chamber 1 in one of the drive shaft 45 is provided a clutch 46 on the drive side, the other end is connected to an output shaft of a motor 47 (not shown).
- Motor 47 is supported by the support plate 46a, between the supporting plate 46a and the first vacuum chamber 1 1 of the outer wall, a first vacuum chamber 1 1 surrounding the periphery of the drive shaft 45 and the hole 11
- a bellows 48 and a drive component 49 are provided for advancing and retracting the drive-side clutch 46 with respect to the driven-side clutch 43 while maintaining airtightness.
- the drive component 49 can be constituted by, for example, an operation shaft 49a and an air cylinder 49b provided through the support plate 46a.
- the first to seventh vacuum chambers 1 1 to 17 are evacuated from atmospheric pressure to a predetermined pressure.
- the substrate S as a measurement sample carried in a carrier SC 2 which is carried into the fourth vacuum chamber 1 4 5 vacuum chamber 1 5 is set, the first vacuum chamber 1 Transfer to 1 .
- all the shielding plates 34 1 , 34 2 , 34 3 are attracted and held by the shielding-side magnet 44a.
- heating of the evaporation material is started in a state where the evaporation sources 2 1 , 2 2 , and 2 3 are covered with the shutter 21, respectively.
- the substrate S a substrate used for mass production can be used, and a substrate in which a silicon wafer or a glass substrate is attached only to a predetermined range of the substrate S corresponding to the slit hole 312 can be used.
- the first vacuum chamber 1 starts the transfer of the carrier SC 2 a driving roller DR driven to rotate, the drive shaft 45 of the moving means 4 located on the most upstream side, the shielding plate located in the transport direction leading 34
- the rotational drive of the drive roller DR is temporarily stopped.
- the drive component 49 is moved to the entry position to engage the drive side clutch 46 and the driven side clutch 43, and in this state, the drive shaft 45 is driven to rotate by the motor 47, and the shield side magnet 44a is attracted.
- the shield plate 341 is swung against the force and moved to the open position, and is attracted and held by the open-side magnet 44b.
- the first predetermined range S1 of the substrate S is to face the evaporation source 2 1 of the most upstream side through the slit hole 312.
- the state transport of the carrier SC 2 resumes to the downstream side, the retracting only shutter 21 of the evaporation source 2 1 of the most upstream side.
- the evaporation material evaporated in the evaporation source 2 1 only in a predetermined range S1 of the lower surface of the substrate S is deposited is supplied when passing through the position opposed to the evaporation source 2 1.
- the drive shaft 45 of the moving means 4 adjacent in the substrate moving direction reaches a position rotation axis 41 of the shield plate 341 which is positioned in the transport direction top corresponding then, the rotation of the driving roller DR is temporarily stopped, and moved to the blocking position by swinging the blocking plate 34 1 against the suction force of the open side of the magnet 44b in the same operation as above, the shielding side of the magnet 44a is adsorbed and held.
- the first predetermined range S1 is deposited by the deposition source 2 1 is shielded again.
- the shielding plate in the same operation as above 34 2 moves to the open position by swinging the suction is held on the open side of the magnet 44b, in this state, is retracted only shutter 21 of the evaporation source 2 2, the second predetermined range S2 of the lower surface of the substrate S evaporation material evaporated in the evaporation source 2 2 only is deposited is supplied.
- This operation further repeated, the evaporation material evaporated in the evaporation source 2 3 only in the third predetermined range S3 of the lower surface of the substrate S is deposited is supplied, the substrate S for deposition preparation is formed.
- the shielding means 34 1 , 34 2 , and 34 3 are appropriately driven, the range in which the evaporation material is supplied in the surface of the substrate S can be appropriately changed.
- a single layer film can be formed by supplying an evaporation material.
- the working time for film formation preparation can be shortened as compared with the above-described conventional example using a plurality of substrates S, and since only a single substrate is used, the cost is low. It is advantageous when the number of evaporation sources provided in one is large.
- the carriers SC 1 and SC 2 have been described by way of example in which the substrate accommodation holes 31a and the slit holes 312 are opened.
- the present invention is not limited to this, and an adhesive tape is used on the lower surface of the carrier. You may make it affix a board
- the moving unit 4 includes a plurality of shielding plates 34 1 , 34 2 , and 34 3 has been described as an example.
- the present invention is not limited to this, and the substrate S is transported toward the downstream side. Any film can be applied to the present invention as long as the film forming range can be changed as appropriate.
- the carrier SC 3 is provided on the upper left end and upper right end side of both flange portions 33 of the carrier body 31, and is supported by a bearing 401. and has been rollers 402 and 403, and a shielding plate 300 that is wound around and covers the lower surface both rollers 402 and 403 of the carrier body 31, the shield plate 300, a predetermined substrate S set in the carrier SC 3 An opening 301 exposing the range is formed.
- the rotating shaft of the roller 402 on the front side in the conveying direction protrudes outward, and a driven-side clutch 404 is provided at the tip thereof, and these components receive power from the outside to drive the shielding plate 300.
- the driven part for this is comprised.
- the position opposite to each evaporation source 2 1 , 2 2 , 2 3 during the transfer from the upstream side to the downstream side with the substrate S set on the carrier SC 3 by the moving means 4 similar to the above embodiment.
- the range in which the evaporation material is supplied within the surface of the substrate S is appropriately changed, that is, the shielding position for shielding a predetermined range on one side of the substrate S and the predetermined range are the evaporation source 2.
- the shielding plate 300 moves as a shielding means between the open positions facing 1 , 2 2 , and 2 3 .
- the predetermined range in which the evaporation material is supplied in the plane of the substrate S can be changed by operating the moving means 4 once, which is advantageous.
- the carrier SC 2 , SC 3 is provided with a driven part and receives power from the outside to drive the shielding plates 34 1 , 34 2 , 34 3 , 300, but the present invention is not limited to this. It is not something.
- the carrier SC 4 itself may be directly provided with a drive unit that moves the opening 301 of the shielding plate 300.
- the rotation shafts 402a and 403a of the rollers 402 and 403 are respectively supported by a pair of support members 410a and 410b provided upright on the flange portion 33, and outward from one support member 410a.
- a mainspring spring 420 formed by winding a belt-shaped elastic material 420a in a coil shape is fixed to the protruding end portions of the rotating shafts 402a and 403a.
- the rollers 402 and 403 are rotated by the force with which the spring spring 420 tries to return to the original position along with the movement of the carrier SC 4 to the downstream side, so that the opening 301 of the shielding plate 300 moves and the substrate S is moved in the plane.
- the range in which the evaporation material is supplied can be changed as appropriate.
- the shield plates 34 1 , 34 2 , and 34 3 are provided for each slit hole 312, but the same reference numerals are used for the same members or elements as those in the embodiment shown in FIGS. as shown in FIG. 7 showing using, in carrier SC 5 according to another modification, the shielding plate 34 1 is located in the transport direction top is omitted, the shield plate 34 2 adjacent is moved to the open position, slit 312 located in the transport direction top is shielded, further, when the shielding plate 34 3 adjacent is moved to the open position, the center of the slit 312 is to be shielded.
- the drive unit 430 that moves the shielding plates 34 2 and 34 3 is directly provided in the carrier SC 4 .
- a known actuator such as a motor is used.
- a known non-contact power feeding method is applied, or each driving roller DR provided in the first vacuum chamber 11 and each driving roller DR are rolled. This can be done via the flange portion 33 of the carrier body 31.
- a drive unit 430 with a battery can be adopted, and a mechanism for supplying power can be omitted.
- a mechanism such as a cam may be provided so that the shielding plates 34 1 , 34 2 , and 34 3 can be moved separately between the shielding position and the open position, and the shielding plate can be used using a known microswitch or sensor. 34 1, 34 2, the timing of the opening and closing of 34 3 may be controlled.
- the actuator as a drive unit described above may be adopted naturally in the carrier SC 4.
- the evaporation source 2 1 , 2 2 , 2 3 of the film forming apparatus DM has been described as an example of forming a film by a vacuum evaporation method using a resistance heating method or an electron gun method.
- a sputtering cathode can be used as an evaporation source, and it can be constituted by a gas introduction means for forming a film by a CVD method. it can.
- DM In-line type film forming apparatus, 1 1 ... Vacuum chamber, 2 1 , 2 2 , 2 3 ... Evaporation source, 34 1 , 34 2 , 34 3 , 300 ... Shield plate (shielding means), 4 ... Moving means, DR ... driving roller (substrate transfer means), S ... substrate, SC 1 , SC 2 , SC 3 , SC 4 , SC 5 ... carrier (substrate transfer means).
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (6)
- 複数個の蒸発源が列設される真空チャンバ内に、各蒸発源が列設された方向に沿って処理すべき基板を移送し、基板に多層膜を形成するのに先立って、基板に各蒸発源から供給される蒸発材料の単層膜を成膜して測定用試料を作製する工程を含むインライン式成膜装置の成膜準備方法であって、
基板がキャリアにセットされて上流側の蒸発源に対向した位置から下流側の蒸発源に対向した位置まで連続または断続して移送されるものとし、キャリアとして、基板の片面の所定範囲を夫々選択的に遮蔽できる複数個の遮蔽手段を備えるものを用い、上流側から下流側に向けてキャリアで基板を移送する際に、各遮蔽手段により夫々遮蔽される所定範囲を順次変更して単一の基板の面内に各蒸発源から供給される蒸発材料の単層膜が夫々成膜されることを特徴とするインライン式成膜装置の成膜準備方法。 - 真空雰囲気の形成が可能な真空チャンバを備え、真空チャンバ内に、複数個の蒸発源が列設されると共に、各蒸発源が列設された方向に沿って処理すべき基板を移送する基板移送手段が設けられるインライン式成膜装置であって、
基板移送手段が、各蒸発源に対向する基板の片面を開放して保持するキャリアと、キャリアを上流側の蒸発源に対向した位置から下流側の蒸発源に対向した位置まで連続または断続して駆動する駆動手段とを備えるものにおいて、
キャリアは、基板の片面の所定範囲を選択的に遮蔽できる遮蔽手段を備え、基板の片面の所定範囲を遮蔽する遮蔽位置と当該所定範囲が蒸発源を臨む開放位置との間で遮蔽手段を移動する移動手段を設けることを特徴とするインライン式成膜装置。 - 前記遮蔽手段は、その下面に開設される複数のスリット孔と各スリット孔を夫々塞ぐ遮蔽板とで構成され、前記移動手段により遮蔽板が遮蔽位置と開放位置との間で移動されるように構成したことを特徴とする請求項2記載のインライン式成膜装置。
- 前記遮蔽手段は、複数個のローラとキャリアの下面を覆って各ローラに巻き掛けられた単一の遮蔽板を有し、遮蔽板にキャリアにセットされた基板の所定範囲を露出する開口が形成され、前記移動手段により前記開口の位置を基板面内でずらすように構成したことを特徴とする請求項2記載のインライン式成膜装置。
- インライン式成膜装置にて処理すべき基板の片面を開放して当該基板を移送するのに用いられるキャリアであって、
基板の片面の所定範囲を選択的に遮蔽できる遮蔽手段を備え、外部からの動力が伝達されて、基板の片面の所定範囲を遮蔽する遮蔽位置と当該所定範囲を開放する開放位置との間で遮蔽手段を移動させるための被駆動部を更に有することを特徴とするキャリア。 - インライン式成膜装置にて処理すべき基板の片面を開放して当該基板を移送するのに用いられるキャリアであって、
基板の片面の所定範囲を選択的に遮蔽できる遮蔽手段を備え、基板の片面の所定範囲を遮蔽する遮蔽位置と当該所定範囲を開放する開放位置との間で遮蔽手段を移動させる駆動部を更に有することを特徴とするキャリア。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480067225.7A CN105874098B (zh) | 2013-12-12 | 2014-11-26 | 连续式成膜装置的成膜准备方法和连续式成膜装置以及搬运器 |
KR1020167018576A KR20160098347A (ko) | 2013-12-12 | 2014-11-26 | 인라인식 성막장치의 성막 준비방법, 인라인식 성막장치 및 캐리어 |
JP2015552306A JP6179908B2 (ja) | 2013-12-12 | 2014-11-26 | インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-257388 | 2013-12-12 | ||
JP2013257388 | 2013-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015087505A1 true WO2015087505A1 (ja) | 2015-06-18 |
Family
ID=53370836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/005919 WO2015087505A1 (ja) | 2013-12-12 | 2014-11-26 | インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6179908B2 (ja) |
KR (1) | KR20160098347A (ja) |
CN (1) | CN105874098B (ja) |
TW (1) | TWI573886B (ja) |
WO (1) | WO2015087505A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114622179A (zh) * | 2020-12-10 | 2022-06-14 | 佳能特机株式会社 | 成膜装置、成膜方法及电子器件的制造方法 |
JP2022092406A (ja) * | 2020-12-10 | 2022-06-22 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
CN115537753A (zh) * | 2021-06-29 | 2022-12-30 | 鑫天虹(厦门)科技有限公司 | 开合式遮蔽构件及具有开合式遮蔽构件的薄膜沉积机台 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109609922B (zh) * | 2019-01-02 | 2021-04-20 | 京东方科技集团股份有限公司 | 薄膜制备装置、方法及*** |
KR102184356B1 (ko) * | 2019-02-27 | 2020-11-30 | 캐논 톡키 가부시키가이샤 | 성막장치, 성막방법, 및 전자 디바이스 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09143721A (ja) * | 1995-11-17 | 1997-06-03 | Ishikawajima Harima Heavy Ind Co Ltd | 多層膜用シャッターを有する連続真空蒸着装置 |
JP2014031581A (ja) * | 2012-07-31 | 2014-02-20 | Samsung Display Co Ltd | 蒸着装置およびこれを用いた蒸着量測定方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI320059B (en) * | 2006-07-05 | 2010-02-01 | Evaporation equipment and convey device thereof | |
JP2008231446A (ja) | 2007-03-16 | 2008-10-02 | Seiko Epson Corp | インライン式蒸着装置および成膜方法 |
JP5506921B2 (ja) * | 2010-04-28 | 2014-05-28 | 株式会社アルバック | 真空処理装置並びに基板とアラインメントマスクの移動方法及び位置合わせ方法並びに成膜方法 |
DE102010052761A1 (de) * | 2010-11-30 | 2012-05-31 | Leybold Optics Gmbh | Vorrichtung zum Beschichten eines Substrats |
-
2014
- 2014-11-26 WO PCT/JP2014/005919 patent/WO2015087505A1/ja active Application Filing
- 2014-11-26 CN CN201480067225.7A patent/CN105874098B/zh active Active
- 2014-11-26 KR KR1020167018576A patent/KR20160098347A/ko not_active Application Discontinuation
- 2014-11-26 JP JP2015552306A patent/JP6179908B2/ja active Active
- 2014-12-09 TW TW103142849A patent/TWI573886B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09143721A (ja) * | 1995-11-17 | 1997-06-03 | Ishikawajima Harima Heavy Ind Co Ltd | 多層膜用シャッターを有する連続真空蒸着装置 |
JP2014031581A (ja) * | 2012-07-31 | 2014-02-20 | Samsung Display Co Ltd | 蒸着装置およびこれを用いた蒸着量測定方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114622179A (zh) * | 2020-12-10 | 2022-06-14 | 佳能特机株式会社 | 成膜装置、成膜方法及电子器件的制造方法 |
JP2022092404A (ja) * | 2020-12-10 | 2022-06-22 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
JP2022092406A (ja) * | 2020-12-10 | 2022-06-22 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
JP7216064B2 (ja) | 2020-12-10 | 2023-01-31 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
JP7239549B2 (ja) | 2020-12-10 | 2023-03-14 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
CN114622179B (zh) * | 2020-12-10 | 2023-11-03 | 佳能特机株式会社 | 成膜装置、成膜方法及电子器件的制造方法 |
CN115537753A (zh) * | 2021-06-29 | 2022-12-30 | 鑫天虹(厦门)科技有限公司 | 开合式遮蔽构件及具有开合式遮蔽构件的薄膜沉积机台 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2015087505A1 (ja) | 2017-03-16 |
CN105874098A (zh) | 2016-08-17 |
TW201534745A (zh) | 2015-09-16 |
TWI573886B (zh) | 2017-03-11 |
KR20160098347A (ko) | 2016-08-18 |
CN105874098B (zh) | 2018-06-29 |
JP6179908B2 (ja) | 2017-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6179908B2 (ja) | インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア | |
US10431779B2 (en) | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus using the same, and organic light-emitting display apparatus manufactured using the method | |
US9306191B2 (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
US20140014921A1 (en) | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus by using the same, and organic light-emitting display apparatus manufactured by the method | |
US20140014917A1 (en) | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus using the same, and organic light-emitting display apparatus manufactured using the method | |
TW201525163A (zh) | 成膜罩體及觸控面板基板 | |
US20170250379A1 (en) | Evaporation source having multiple source ejection directions | |
JP2020023737A (ja) | 成膜レートモニタ装置及び成膜装置 | |
JP5994089B2 (ja) | 蒸着装置 | |
CA2908205C (en) | Sputtering device | |
WO2012146479A1 (en) | Tooling carrier for inline coating machine, method of operating thereof and process of coating a substrate | |
JP2003041361A (ja) | 成膜装置 | |
KR101238534B1 (ko) | 리니어 다층박막 증착장치 | |
JP6500084B2 (ja) | 薄膜形成装置 | |
JP2006274396A5 (ja) | ||
US20050241585A1 (en) | System for vaporizing materials onto a substrate surface | |
KR20150120404A (ko) | 성막 방법 및 성막 장치 | |
KR101494223B1 (ko) | 원통형 플라즈마 캐소드 장치 | |
JP2010024469A (ja) | スパッタ装置 | |
KR20110135234A (ko) | 반구형 공진기의 금속박막 증착방법 및 그 장치 | |
US20140044875A1 (en) | In-line deposition chamber design for multi-stage physical vapor deposition | |
KR20230120774A (ko) | 셔터를 포함하는 진공 증발원 모듈 및 이를 이용한 유기발광 디스플레이 장치 제조 방법 | |
WO2019084840A1 (en) | Evaporation plate for depositing deposition material on substrate, evaporation apparatus, and method of depositing deposition material on substrate | |
JP2006336037A (ja) | 気相堆積装置、気相堆積方法 | |
WO2024003603A1 (en) | Substrate processing system for processing of a plurality of substrates and method of processing a substrate in an in-line substrate processing system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14870198 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2015552306 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20167018576 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14870198 Country of ref document: EP Kind code of ref document: A1 |