WO2015079870A1 - Hollow-space-sealing resin sheet and method for manufacturing hollow package - Google Patents

Hollow-space-sealing resin sheet and method for manufacturing hollow package Download PDF

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Publication number
WO2015079870A1
WO2015079870A1 PCT/JP2014/079220 JP2014079220W WO2015079870A1 WO 2015079870 A1 WO2015079870 A1 WO 2015079870A1 JP 2014079220 W JP2014079220 W JP 2014079220W WO 2015079870 A1 WO2015079870 A1 WO 2015079870A1
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Prior art keywords
resin sheet
hollow
resin
sealing
volume
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PCT/JP2014/079220
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French (fr)
Japanese (ja)
Inventor
豊田　英志
祐作 清水
剛志 土生
智昭 市川
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日東電工株式会社
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Publication of WO2015079870A1 publication Critical patent/WO2015079870A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/08—Holders with means for regulating temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • This invention relates to the resin sheet for hollow sealing, and the manufacturing method of a hollow package.
  • a sealing resin For the production of an electronic device package, typically, one or more electronic devices fixed to a substrate or the like via bumps or the like are sealed with a sealing resin, and the sealing body is united as an electronic device as necessary. The procedure of dicing so that it becomes a package of is adopted.
  • a sealing resin a sheet-shaped sealing resin may be used.
  • MEMS Microelectronic devices
  • SAW Surface Acoustic Wave
  • CMOS Complementary Metal Oxide Semiconductor
  • acceleration sensors acceleration sensors
  • MEMS microelectronic devices
  • SAW Surface Acoustic Wave
  • CMOS Complementary Metal Oxide Semiconductor
  • Each package in which these electronic devices are sealed generally has a hollow structure for ensuring the propagation of surface acoustic waves, maintaining the optical system, and the mobility of the movable member of the electronic device.
  • This hollow structure is often provided as a gap between the substrate and the element.
  • Patent Document 1 describes a technique of hollow-molding a functional element using a gel-like curable resin sheet.
  • a manufacturing method of the package there is a method of laminating a resin sheet for hollow sealing so as to cover one or a plurality of electronic devices arranged on an adherend, and then thermosetting the resin sheet for hollow sealing. Can be mentioned.
  • the electronic device it is desirable that the electronic device can be suitably embedded in the hollow sealing resin sheet, and that the material constituting the sealing resin sheet does not flow into the gap.
  • the present invention has been made in view of the above-described problems, and the object thereof is to suitably embed an electronic device in a hollow sealing resin sheet, and in the gap between the adherend and the electronic device,
  • An object of the present invention is to provide a hollow sealing resin sheet in which a material constituting the sealing resin sheet hardly flows and a method for manufacturing a hollow package.
  • the present invention provides a hollow sealing resin sheet on the electronic device so as to cover one or more electronic devices arranged on the adherend, and a hollow portion between the adherend and the electronic device.
  • the hollow sealing resin sheet used for the manufacturing method of the hollow package including the lamination process which laminates
  • Containing an inorganic filler in a content of 68% by volume or more In the particle size distribution of the inorganic filler measured by a laser diffraction scattering method, the volume exceeding the width of the hollow portion is 10% by volume to 90% by volume, A test substrate in which a plurality of chips are flip-chip connected to a substrate, the distance between the chips is 100 ⁇ m, and the gap (hollow gap) between the substrate and the chips is 20 ⁇ m, After the resin sheet for hollow sealing is placed on the test substrate, the hollow sealing when pressurized from the hollow sealing resin sheet side at 70 ° C., a
  • variety of the said hollow part are mixed. Therefore, large and small inorganic fillers are closely packed. Further, the inorganic filler having such a particle size distribution is contained as much as 68% by volume or more. Therefore, a resin (thixotropy-like action) that restricts flow is imparted to the resin in the vicinity of the hollow part (the whole material constituting the resin sheet for hollow sealing containing an inorganic filler), and the resin enters the hollow part efficiently. It can be well prevented. As a result, a hollow package can be manufactured with a high yield while maintaining the hollow structure. Further, since the ratio A / B is 5 or more, in the laminating step, the electronic device can be suitably embedded in the hollow sealing resin sheet, and the gap between the adherend and the electronic device is The material constituting the sealing resin sheet can be made difficult to flow.
  • the viscosity of the organic resin component at 120 ° C. is preferably 1 Pa ⁇ s or more.
  • the viscosity of the organic resin component at 120 ° C. is 1 Pa ⁇ s or more, the viscosity of the organic resin component (organic resin component excluding the inorganic filler) is high, so that only the organic resin component oozes into the hollow portion. This can be suppressed.
  • the minimum dynamic viscosity of the entire hollow sealing resin sheet before curing at 60 to 150 ° C. is 50,000 Pa ⁇ s to 1,000,000 Pa ⁇ s.
  • the entire material constituting the hollow sealing resin sheet is It can be made difficult to flow in by the hollow portion.
  • the present invention is a method for manufacturing a hollow package, A resin sheet for hollow sealing is laminated on the electronic device while maintaining a hollow portion between the adherend and the electronic device so as to cover one or a plurality of electronic devices arranged on the adherend. Lamination process; A sealing body forming step of curing the hollow sealing resin sheet to form a sealing body,
  • the hollow sealing resin sheet is: Containing an inorganic filler in a content of 68% by volume or more, In the particle size distribution of the inorganic filler measured by a laser diffraction scattering method, the volume exceeding the width of the hollow portion is 10% by volume to 90% by volume, A test substrate in which a plurality of chips are flip-chip connected to a substrate, the distance between the chips is 100 ⁇ m, and the gap between the substrate and the chip is 20 ⁇ m, After the resin sheet for hollow sealing is placed on the test substrate, the hollow sealing when pressurized from the hollow sealing resin sheet side at 70 ° C., a pressure of 1 kgf / cm 2
  • the resin sheet for hollow sealing has both the inorganic filler in which a particle size exceeds the width
  • a hollow package can be manufactured with a high yield while maintaining the hollow structure.
  • the ratio A / B is 5 or more, in the laminating step, the electronic device can be suitably embedded in the hollow sealing resin sheet, and the gap between the adherend and the electronic device is The material constituting the sealing resin sheet can be made difficult to flow.
  • FIG. 4 is a SEM observation image of a cut surface of a hollow sealing resin sheet according to Example 2.
  • FIG. 1 is a cross-sectional view schematically showing a hollow sealing resin sheet (hereinafter also simply referred to as “resin sheet”) 11 according to an embodiment of the present invention.
  • the resin sheet 11 is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Note that a release treatment may be performed on the support 11a in order to easily peel off the resin sheet 11.
  • a support 11a such as a polyethylene terephthalate (PET) film.
  • PET polyethylene terephthalate
  • FIG. 2A is a schematic front view for explaining the test substrate.
  • the test substrate 50 has a configuration in which a plurality of chips 54 are flip-chip connected to the substrate 52.
  • the chip 54 is flip-chip connected to the substrate 52 by bumps 56.
  • the distance between the chips 54 is 100 ⁇ m, and the gap 58 between the substrate 52 and the chip 54 is 20 ⁇ m.
  • the resin sheet 11 constitutes the resin sheet 11 when the resin sheet 11 is disposed on the test substrate 50 and then pressed from the resin sheet 11 side at 70 ° C., a pressure of 1 kgf / cm 2 , and a vacuum degree of 10 Torr.
  • the ratio A / B between the material entry speed A between the chips 54 and the resin entry speed B into the gap 58 is 5 or more, preferably 8 or more, and 10 or more. More preferred.
  • the ratio A / B is preferably larger, but is, for example, 300 or less. Since the ratio A / B is 5 or more, the electronic device can be suitably embedded in the resin sheet 11, and the material constituting the resin sheet 11 flows into the gap between the adherend and the electronic device. Can be difficult.
  • 2B to 2D are diagrams for explaining how to obtain the ratio A / B.
  • the resin sheet 11 is disposed on the test substrate 50.
  • pressurization is performed from the resin sheet 11 side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr.
  • the resin enters between the chips 54 by pressure.
  • the speed in the traveling direction of the tip of the resin is measured. This is the approach speed A.
  • the approach speed A is measured within a range until the material constituting the resin sheet 11 reaches the substrate 52.
  • the resin reaches the substrate 52 as shown in FIG. 2D.
  • pressurization is continued as it is, and the speed of the resin tip in the traveling direction is measured. Specifically, the speed of the resin tip in the direction of the gap 58 is measured. This is the approach speed B. Thereafter, the ratio A / B is calculated.
  • Resin sheet 11 preferably contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • those having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C. are preferably solid, and in particular, moldability and From the viewpoint of reliability, bisphenol F type epoxy resin, bisphenol A type epoxy resin, biphenyl type epoxy resin and the like are more preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, from the viewpoint of high curing reactivity and low cost.
  • a phenol novolac resin can be preferably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the lower limit of the total content of epoxy resin and phenol resin in the resin sheet 11 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic device, a board
  • the upper limit of the total content is preferably 20% by weight or less, and more preferably 15% by weight or less. The hygroscopicity of a resin sheet can be reduced as it is 20 weight% or less.
  • the resin sheet 11 preferably contains a thermoplastic resin. Thereby, the heat resistance of the resin sheet for hollow sealing obtained, flexibility, and intensity
  • Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
  • Polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer Can be mentioned.
  • These thermoplastic resins can be used alone or in combination of two or more.
  • an acrylic resin is preferable from a viewpoint that a flexibility is easy to obtain and a dispersibility with an epoxy resin is favorable.
  • the acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component.
  • alkyl group examples include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.
  • the glass transition temperature (Tg) of the acrylic resin is preferably 50 ° C. or less, more preferably ⁇ 70 to 20 ° C., and further preferably ⁇ 50 to 0 ° C. By setting it as 50 degrees C or less, the viscosity and flexibility of the resin sheet 11 can be improved. By increasing the viscosity and flexibility of the resin sheet 11, it is possible to efficiently prevent the resin from entering the hollow portion (see the hollow portion 14 in FIG. 4A).
  • the acrylic resins those having a weight average molecular weight of 50,000 or more are preferable, 100,000 to 2,000,000 are more preferable, and 300,000 to 1,600,000 are more preferable. Within the above numerical range, the viscosity and flexibility of the resin sheet 11 can be further increased.
  • the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
  • the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid.
  • Carboxyl group-containing monomers maleic anhydride or acid anhydride monomers such as itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-methacrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyl Hydroxyl group-containing monomers such as acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as
  • a carboxyl group-containing monomer preferably, a glycidyl group (epoxy group) -containing monomer, and a hydroxyl group-containing monomer from the viewpoint of increasing the viscosity of the resin sheet 11 by reacting with the epoxy resin.
  • a carboxyl group-containing monomer preferably, a glycidyl group (epoxy group) -containing monomer, and a hydroxyl group-containing monomer from the viewpoint of increasing the viscosity of the resin sheet 11 by reacting with the epoxy resin.
  • the content of the thermoplastic resin in the resin sheet 11 is preferably 0.2% by weight or more, and more preferably 0.5% by weight or more.
  • flexibility of a resin sheet and flexibility are obtained as the said content is 0.2 weight% or more.
  • the content of the thermoplastic resin in the resin sheet 11 is preferably 10% by weight or less, and more preferably 5% by weight or less. When it is 10% by weight or less, the adhesiveness of the resin sheet to the electronic device or the substrate is good.
  • the resin sheet 11 contains an inorganic filler in a content of 68% by volume or more.
  • the content is preferably 72% by volume or more, and more preferably 75% by volume or more.
  • the content is preferably 91% by volume or less, more preferably 88% by volume or less.
  • the resin sheet 11 preferably has an area occupied by the inorganic filler in the cross-sectional SEM image of 50% or more, more preferably 60% or more and 90% or less, and 65% or more and 80% or less. Further preferred.
  • FIG. 3 is a graph showing the correlation between the content of the inorganic filler and the area occupied by the inorganic filler in the cross-sectional SEM image.
  • silica was used, and the particle size distribution measured by the laser diffraction scattering method was 42% by volume exceeding 20 ⁇ m (58% by volume below 20 ⁇ m).
  • the content of the inorganic filler can be explained by using “wt%” as a unit.
  • the content of silica or alumina will be described with “% by weight” as a unit.
  • silica usually has a specific gravity of 2.2 g / cm 3
  • the preferred range of the silica content (% by weight) is as follows. That is, the content of silica in the resin sheet 11 is preferably 83% by weight or more, and more preferably 85% by weight or more. 95 weight% or less is preferable and, as for content of the silica in the resin sheet 11, 93 weight% or less is more preferable.
  • the preferred range of the alumina content is as follows. That is, the content of alumina in the resin sheet 11 is preferably 89% by weight or more, and more preferably 91% by weight or more. 97 weight% or less is preferable and, as for content of the alumina in the resin sheet 11, 96 weight% or less is more preferable.
  • the content exceeding the width of the hollow portion of the hollow package to be manufactured is in the range of 10% by volume to 90% by volume, and 15% by volume. It is preferably in the range of 85% by volume or less and more preferably in the range of 20% by volume or more and 80% by volume or less.
  • the width of the hollow part of the hollow package to be manufactured is assumed to be 20 ⁇ m
  • those exceeding 20 ⁇ m are in the range of 10% by volume to 90% by volume. Yes, preferably in the range of 15% by volume to 85% by volume, more preferably in the range of 20% by volume to 80% by volume.
  • the particle size distribution of the inorganic filler by the laser diffraction scattering method is in the above specific relationship, a high filling state of the inorganic filler in the vicinity of the hollow structure can be obtained, thereby providing a thixotropic-like action to the resin during sealing. Resin intrusion into the hollow structure can be suitably suppressed.
  • the inorganic filler is a mixture of a plurality of types of particles, the particle size distribution of the mixture satisfies the above relationship.
  • the shape of the inorganic filler is not particularly limited, and may be any shape such as a spherical shape (including an ellipsoidal shape), a polyhedron shape, a polygonal column shape, a flat shape, and an indeterminate shape. From the viewpoint of achieving a filling state and appropriate fluidity, a spherical shape is preferable.
  • the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
  • quartz glass, talc, silica such as fused silica or crystalline silica
  • alumina aluminum nitride, silicon nitride And boron nitride powder.
  • silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • silica powder is preferable, and fused silica powder is more preferable.
  • fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable.
  • the average particle diameter of the inorganic filler is preferably 50 ⁇ m or less, more preferably 0.1 to 30 ⁇ m, and particularly preferably 0.5 to 25 ⁇ m. preferable.
  • the average particle diameter is determined as D 50 following the procedure of particle size distribution measurement in the embodiment.
  • the resin sheet 11 preferably contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Of these, imidazole compounds are preferred because they have good reactivity and are easy to increase the Tg of the cured product.
  • the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • Resin sheet 11 may contain a flame retardant component as necessary to the extent that it does not adversely affect the hollow moldability. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation.
  • a flame retardant composition for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
  • Resin sheet 11 may contain a silane coupling agent.
  • the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
  • the content of the silane coupling agent in the resin sheet 11 is preferably 0.1 to 3% by weight. When it is 0.1% by weight or more, the hardness of the cured resin sheet can be increased and the water absorption rate can be reduced. On the other hand, generation
  • the resin sheet 11 preferably contains a pigment.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • the content of the pigment in the resin sheet 11 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained. The intensity
  • the viscosity of the organic resin component (organic resin component excluding the inorganic filler) at 120 ° C. is preferably 1 Pa ⁇ s or more, more preferably 3 Pa ⁇ s or more and 100 Pa ⁇ s or less, and 5 Pa. More preferably, it is s or more and 50 Pa ⁇ s or less.
  • the viscosity of the organic resin component at 120 ° C. is 1 Pa ⁇ s or higher, the viscosity of the organic resin component is high, so that only the organic resin component can be prevented from leaking into the hollow portion.
  • the minimum dynamic viscosity of the entire resin sheet 11 before curing at 60 to 150 ° C. is preferably 50,000 Pa ⁇ s to 1,000,000 Pa ⁇ s, preferably 80,000 Pa ⁇ s to 800,000 Pa ⁇ s. More preferably, it is 100,000 Pa ⁇ s or more and 600,000 Pa ⁇ s or less.
  • the minimum dynamic viscosity before curing at 60 to 150 ° C. of the entire resin sheet 11 is 50,000 Pa ⁇ s or more and 500,000 Pa ⁇ s or less, the entire material constituting the resin sheet 11 is difficult to flow into the hollow portion. be able to.
  • the resin sheet 11 is prepared by dissolving and dispersing a resin or the like for forming the resin sheet 11 in an appropriate solvent to adjust the varnish, and applying the varnish on the support 11a to a predetermined thickness to form a coating film.
  • the coating film can be formed by drying under predetermined conditions. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, a drying temperature of 70 to 160 ° C. and a drying time of 1 to 30 minutes are performed. Moreover, after apply
  • the resin sheet 11 is bonded together with the separator on the support 11a.
  • the resin sheet 11 contains a thermoplastic resin (acrylic resin), an epoxy resin, and a phenol resin, all of them are dissolved in a solvent, and then applied and dried. Thereby, the viscosity of the resin sheet 11 can be improved and the approach to the hollow part of a resin component can be suppressed.
  • the solvent include methyl ethyl ketone, ethyl acetate, toluene and the like.
  • the thickness of the resin sheet 11 is not particularly limited, but is, for example, 100 to 2000 ⁇ m.
  • An electronic device can be favorably sealed as it is in the said range.
  • the resin sheet 11 may have a single layer structure or a multilayer structure in which two or more resin sheets are laminated, but there is no fear of delamination, the sheet thickness is highly uniform, and the moisture absorption is reduced.
  • a single layer structure is preferred because it is easy.
  • the layer in contact with the electronic device includes (1) an inorganic filler in a content of 68% by volume or more, and (2) in the particle size distribution of the inorganic filler, What exceeds the width of the hollow portion is 10% by volume or more and 90% by volume or less, (3) the ratio A / B may be 5 or more, and the other layers may satisfy the above conditions (1) to (3). Does not have to be satisfied. This is because if the layer in contact with the electronic device satisfies the above conditions (1) to (3), the resin can be efficiently prevented from entering the hollow portion.
  • the resin sheet 11 is a SAW (Surface Acoustic Wave) filter; MEMS (Micro Electro Mechanical Systems) such as pressure sensors and vibration sensors; ICs such as LSIs; semiconductors such as transistors; capacitors; resistors; sealings of electronic devices such as CMOS sensors. Used for stopping. Especially, it can use suitably for sealing of the electronic device (specifically SAW filter, MEMS) which needs hollow sealing, and can use it especially especially especially for sealing of a SAW filter.
  • SAW Surface Acoustic Wave
  • MEMS Micro Electro Mechanical Systems
  • FIG. 4A to FIG. 4C are diagrams schematically showing one step of the method for manufacturing the hollow package according to the embodiment of the present invention. It does not specifically limit as a hollow sealing method, It can seal by a conventionally well-known method. For example, a method of laminating (mounting) an uncured resin sheet 11 on a substrate while maintaining a hollow structure so as to cover an electronic device on an adherend, and then curing and sealing the resin sheet 11 Can be mentioned.
  • the adherend is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a silicon substrate, and a metal substrate.
  • the SAW chip 13 mounted on the printed wiring board 12 is hollow-sealed with the resin sheet 11 to produce a hollow package.
  • a printed wiring board 12 on which a plurality of SAW chips 13 are mounted is prepared (see FIG. 4A).
  • the SAW chip 13 can be formed by dicing a piezoelectric crystal on which predetermined comb-shaped electrodes are formed by a known method.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • the SAW chip 13 and the printed wiring board 12 are electrically connected via protruding electrodes 13a such as bumps.
  • a hollow portion 14 is maintained between the SAW chip 13 and the printed wiring board 12 so as not to inhibit the propagation of surface acoustic waves on the surface of the SAW filter.
  • the distance (width of the hollow portion) between the SAW chip 13 and the printed wiring board 12 can be set as appropriate, and is generally about 10 to 100 ⁇ m.
  • the resin sheet 11 is laminated on the printed wiring board 12 so as to cover the SAW chip 13, and the SAW chip 13 is resin-sealed with the resin sheet 11 (see FIG. 4B).
  • the resin sheet 11 functions as a sealing resin for protecting the SAW chip 13 and its accompanying elements from the external environment.
  • the method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited, and can be performed by a known method such as hot pressing or laminator.
  • the temperature is, for example, 40 to 150 ° C., preferably 50 to 120 ° C.
  • the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa
  • the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
  • it is preferable to press under reduced pressure conditions eg, 0.01 to 5 kPa).
  • the resin sheet 11 includes (1) an inorganic filler in a content of 68% by volume or more, and (2) 10% by volume or more and 90% by volume of the particle size distribution of the inorganic filler that exceeds the width of the hollow part. %, And (3) since the ratio A / B is 5 or more, resin intrusion into the hollow portion 14 is suppressed.
  • the resin sheet 11 is thermoset to form the sealing body 15 (see FIG. 4B).
  • the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • a substrate mounting process can be performed in which rewiring and bumps are formed on the hollow package 18 and mounted on a separate substrate (not shown).
  • a known device such as a flip chip bonder or a die bonder can be used.
  • Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq., Softening point 80 ° C.)
  • Phenol resin LVR8210DL (Novolak-type phenol resin, hydroxyl group equivalent 104 g / eq., Softening point 60 ° C.) manufactured by Gunei Chemical Thermoplastic resin: carboxyl group-containing acrylate copolymer, weight average molecular weight: about 600,000, glass transition temperature (Tg): -35 ° C)
  • Inorganic filler FB-9454FC (average particle size 19 ⁇ m) manufactured by Denki Kagaku Kogyo Carbon black: # 20 manufactured by Mitsubishi Chemical Curing accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Examples and comparative examples According to the blending ratio shown in Table 1, each component was dissolved and dispersed in methyl ethyl ketone as a solvent to obtain a varnish having a concentration of 90% by weight. This varnish was applied on a release treatment film made of a polyethylene terephthalate film having a thickness of 38 ⁇ m after the release treatment with silicone, and then dried at 110 ° C. for 5 minutes. As a result, a sheet having a thickness of 65 ⁇ m was obtained. Four layers of this sheet were laminated to prepare a hollow sealing resin sheet having a thickness of 260 ⁇ m.
  • the composition of the resin sheet for hollow sealing is an organic component other than the inorganic filler, and since substantially all the organic components are burned off by the above-described strong heat treatment, the ash content obtained is measured as an inorganic filler. Went. The results are shown in Table 1.
  • the minimum dynamic viscosity of the hollow sealing resin sheet before thermosetting at 60 to 150 ° C. was measured.
  • the dynamic viscosity was a value measured by a parallel plate method using a viscoelasticity measuring device ARES manufactured by TA Instruments. More specifically, the viscosity was measured in the range of 50 ° C. to 170 ° C. under the conditions of a gap of 1 ⁇ m, a rotating plate diameter of 8 mm, a frequency of 0.1 Hz, a strain of 0.1%, and a heating rate of 10 ° C./min. The lowest viscosity obtained at that time was taken as the lowest dynamic viscosity. The results are shown in Table 1.
  • a test substrate was prepared in which a plurality of silicon chips (3 mm square, thickness 200 ⁇ m) were flip-chip connected to a glass substrate (30 mm square, thickness 1 mm). The chip is flip-chip connected to the substrate by bumps (bump diameter 100 ⁇ m, height 20 ⁇ m). The distance between the chips is 100 ⁇ m, and the gap (hollow gap) between the substrate and the chip is 20 ⁇ m.
  • the resin sheet for hollow sealing of an Example and a comparative example was arrange
  • Chip size 1.2 mm square (thickness 150 ⁇ m)
  • Bump material Au (height 20 ⁇ m)
  • Number of bumps 6 bumps
  • Number of chips 100 (10 x 10)
  • Each hollow sealing resin sheet was stuck on the obtained SAW chip mounting substrate by a vacuum press under the heating and pressurization conditions shown below.
  • the resin sheet for hollow sealing was thermoset in a hot air dryer at 150 ° C. for 1 hour to obtain a sealed body. Cleavage the substrate and sealing resin interface of the obtained sealing body, and the entry of the resin into the hollow part between the SAW chip and the ceramic substrate by the product name “Digital Microscope” (200 times) manufactured by KEYENCE The amount was measured. The resin penetration amount was determined by measuring the maximum reach distance of the resin that entered the hollow portion from the end of the SAW chip, and setting this as the resin penetration amount. The case where the resin penetration amount was 20 ⁇ m or less was evaluated as “ ⁇ ”, and the case where it exceeded 20 ⁇ m was evaluated as “ ⁇ ”. The results are shown in Table 1.
  • the prepared resin sheet for hollow sealing according to Example 2 was thermally cured at 150 ° C. for 1 hour and gradually cooled to room temperature, and then the obtained cured product was cut with a cutter. The cut surface was polished by a Buhler automatic polishing apparatus, and the cut surface after polishing was observed with SEM (2000 times).
  • FIG. 5 the SEM observation image of the cut surface of the resin sheet for hollow sealing which concerns on Example 2 is shown.
  • the SEM observation image in FIG. 5 is an enlarged view of a vertical 270 ⁇ m ⁇ horizontal 270 ⁇ m portion of the sample.
  • a light-colored portion (a portion that is not black) is an inorganic filler.
  • the occupied area of the light-colored portion was obtained by performing binarization processing by the mode method using image processing software WinROOF (manufactured by Mitani Corporation). As a result, it became 73.5%.

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Abstract

This hollow-space-sealing resin sheet contains an inorganic filler in an amount greater than or equal to 68% by volume, and the particle-size distribution of said inorganic filler is such that the percentage of particles constituting said inorganic filler that are larger than the width of the hollow part of a hollow package to be manufactured is between 10% and 90% by volume, inclusive. If said hollow-space-sealing resin sheet is laid out on top of a test substrate that has a plurality of flip chips connected thereto and a pressure of 1 kgf/cm2 is applied at a temperature of 70°C in a 10 Torr vacuum from the side where the hollow-space-sealing resin sheet is, the ratio (A/B) between the penetration rate (A) of the material constituting the hollow-space-sealing resin sheet between the chips and the penetration rate (B) of said material into gaps is greater than or equal to 5.

Description

中空封止用樹脂シート、及び、中空パッケージの製造方法Hollow sealing resin sheet and method for manufacturing hollow package
　本発明は、中空封止用樹脂シート、及び、中空パッケージの製造方法に関する。 This invention relates to the resin sheet for hollow sealing, and the manufacturing method of a hollow package.
　電子デバイスパッケージの作製には、代表的に、バンプ等を介して基板などに固定された１又は複数の電子デバイスを封止樹脂にて封止し、必要に応じて封止体を電子デバイス単位のパッケージとなるようにダイシングするという手順が採用されている。このような封止樹脂として、シート状の封止樹脂が用いられることがある。 For the production of an electronic device package, typically, one or more electronic devices fixed to a substrate or the like via bumps or the like are sealed with a sealing resin, and the sealing body is united as an electronic device as necessary. The procedure of dicing so that it becomes a package of is adopted. As such a sealing resin, a sheet-shaped sealing resin may be used.
　近年、半導体パッケージと並んで、ＳＡＷ（Ｓｕｒｆａｃｅ　Ａｃｏｕｓｔｉｃ　Ｗａｖｅ）フィルタや、ＣＭＯＳ（Ｃｏｍｐｌｅｍｅｎｔａｒｙ　Ｍｅｔａｌ　Ｏｘｉｄｅ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ）センサ、加速度センサ等のＭＥＭＳと称される微小電子デバイスの開発が進められている。これらの電子デバイスを封止したパッケージは、それぞれ一般的に表面弾性波の伝播や光学系の維持、電子デバイスの可動部材の可動性を確保するための中空構造を有している。この中空構造は、基板と素子との間の空隙として設けられることが多い。封止の際には、可動部材の作動信頼性や素子の接続信頼性を確保するよう中空構造を維持しつつ封止する必要がある。例えば、特許文献１には、ゲル状の硬化性樹脂シートを用いて機能素子を中空モールドする技術が記載されている。 Recently, along with semiconductor packages, development of microelectronic devices called MEMS, such as SAW (Surface Acoustic Wave) filters, CMOS (Complementary Metal Oxide Semiconductor) sensors, acceleration sensors, and the like, has been progressing. Each package in which these electronic devices are sealed generally has a hollow structure for ensuring the propagation of surface acoustic waves, maintaining the optical system, and the mobility of the movable member of the electronic device. This hollow structure is often provided as a gap between the substrate and the element. When sealing, it is necessary to seal while maintaining the hollow structure so as to ensure the operation reliability of the movable member and the connection reliability of the element. For example, Patent Document 1 describes a technique of hollow-molding a functional element using a gel-like curable resin sheet.
特開２００６－１９７１４号公報JP 2006-19714 A
　上記パッケージの製造方法としては、被着体上に配置された１又は複数の電子デバイスを覆うように中空封止用樹脂シートを積層し、その後、中空封止用樹脂シートを熱硬化させる方法が挙げられる。このような製造方法においては、電子デバイスを好適に中空封止用樹脂シートに埋め込みでき、且つ、上記空隙には、封止用樹脂シートを構成する材料が流入しないことが望まれる。 As a manufacturing method of the package, there is a method of laminating a resin sheet for hollow sealing so as to cover one or a plurality of electronic devices arranged on an adherend, and then thermosetting the resin sheet for hollow sealing. Can be mentioned. In such a manufacturing method, it is desirable that the electronic device can be suitably embedded in the hollow sealing resin sheet, and that the material constituting the sealing resin sheet does not flow into the gap.
　本発明は上述した課題に鑑みてなされたものであり、その目的は、電子デバイスを好適に中空封止用樹脂シートに埋め込みでき、且つ、被着体と電子デバイスとの間の空隙には、封止用樹脂シートを構成する材料が流入し難い中空封止用樹脂シート、及び、中空パッケージの製造方法を提供することにある。 The present invention has been made in view of the above-described problems, and the object thereof is to suitably embed an electronic device in a hollow sealing resin sheet, and in the gap between the adherend and the electronic device, An object of the present invention is to provide a hollow sealing resin sheet in which a material constituting the sealing resin sheet hardly flows and a method for manufacturing a hollow package.
　本願発明者等は、下記の構成を採用することにより、前記の課題を解決できることを見出して本発明を完成させるに至った。 The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.
　すなわち、本発明は、被着体上に配置された１又は複数の電子デバイスを覆うように中空封止用樹脂シートを前記電子デバイス上に前記被着体と前記電子デバイスとの間の中空部を維持しながら積層する積層工程、及び、前記中空封止用樹脂シートを硬化させて封止体を形成する封止体形成工程を含む中空パッケージの製造方法に使用される中空封止用樹脂シートであって、
　無機充填剤を６８体積％以上の含有量で含み、
　レーザー回折散乱法により測定した前記無機充填剤の粒度分布において、前記中空部の幅を超えるものが１０体積％以上９０体積％以下であり、
　基板に複数のチップがフリップチップ接続されたテスト基板であって、前記チップ間の距離が１００μｍであり、且つ、前記基板と前記チップとの間隙（中空ギャップ）が２０μｍであるものを用い、
　前記テスト基板上に、前記中空封止用樹脂シートを配置した後、前記中空封止用樹脂シート側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧した際の、前記中空封止用樹脂シートを構成する材料のチップ間への進入速度Ａと、前記中空封止用樹脂シートを構成する材料の前記間隙への進入速度Ｂとの比Ａ／Ｂが５以上であることを特徴とする。 That is, the present invention provides a hollow sealing resin sheet on the electronic device so as to cover one or more electronic devices arranged on the adherend, and a hollow portion between the adherend and the electronic device. The hollow sealing resin sheet used for the manufacturing method of the hollow package including the lamination process which laminates | maintains while maintaining a process, and the sealing body formation process which hardens the said hollow sealing resin sheet and forms a sealing body Because
Containing an inorganic filler in a content of 68% by volume or more,
In the particle size distribution of the inorganic filler measured by a laser diffraction scattering method, the volume exceeding the width of the hollow portion is 10% by volume to 90% by volume,
A test substrate in which a plurality of chips are flip-chip connected to a substrate, the distance between the chips is 100 μm, and the gap (hollow gap) between the substrate and the chips is 20 μm,
After the resin sheet for hollow sealing is placed on the test substrate, the hollow sealing when pressurized from the hollow sealing resin sheet side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr. The ratio A / B between the entry speed A of the material constituting the fixing resin sheet between the chips and the entry speed B of the material constituting the hollow sealing resin sheet into the gap is 5 or more. Features.
　前記構成によれば、粒径が前記中空部の幅を超える無機充填剤と、粒径が前記中空部の幅以下の無機充填剤との両方が混在している。従って、大小の無機充填剤が密に充填されている。また、このような粒度分布を有する無機充填剤を６８体積％以上と多く含有されている。従って、中空部付近の樹脂（無機充填剤を含む中空封止用樹脂シートを構成する材料全体）に対して流動を規制する作用（チクソトロピー様作用）が付与され、中空部への樹脂進入を効率良く防止することができる。その結果、中空構造を維持しつつ高い歩留まりで中空パッケージを作製することができる。
　また、前記比Ａ／Ｂが５以上であるため、前記積層工程において、電子デバイスを好適に中空封止用樹脂シートに埋め込みでき、且つ、被着体と電子デバイスとの間の空隙には、封止用樹脂シートを構成する材料が流入し難くすることができる。 According to the said structure, both the inorganic filler whose particle size exceeds the width | variety of the said hollow part, and the inorganic filler whose particle size is below the width | variety of the said hollow part are mixed. Therefore, large and small inorganic fillers are closely packed. Further, the inorganic filler having such a particle size distribution is contained as much as 68% by volume or more. Therefore, a resin (thixotropy-like action) that restricts flow is imparted to the resin in the vicinity of the hollow part (the whole material constituting the resin sheet for hollow sealing containing an inorganic filler), and the resin enters the hollow part efficiently. It can be well prevented. As a result, a hollow package can be manufactured with a high yield while maintaining the hollow structure.
Further, since the ratio A / B is 5 or more, in the laminating step, the electronic device can be suitably embedded in the hollow sealing resin sheet, and the gap between the adherend and the electronic device is The material constituting the sealing resin sheet can be made difficult to flow.
　前記構成においては、１２０℃における有機樹脂成分の粘度が１Ｐａ・ｓ以上であることが好ましい。 In the above configuration, the viscosity of the organic resin component at 120 ° C. is preferably 1 Pa · s or more.
　１２０℃における有機樹脂成分の粘度が１Ｐａ・ｓ以上であると、有機樹脂成分（無機充填剤を除く有機樹脂成分）の粘度が高粘度であるため、有機樹脂成分のみが前記中空部に染み出すことを抑制することができる。 When the viscosity of the organic resin component at 120 ° C. is 1 Pa · s or more, the viscosity of the organic resin component (organic resin component excluding the inorganic filler) is high, so that only the organic resin component oozes into the hollow portion. This can be suppressed.
　前記構成においては、中空封止用樹脂シート全体の６０～１５０℃における硬化前の最低動的粘度が５万Ｐａ・ｓ以上１００万Ｐａ・ｓ以下であることが好ましい。 In the above configuration, it is preferable that the minimum dynamic viscosity of the entire hollow sealing resin sheet before curing at 60 to 150 ° C. is 50,000 Pa · s to 1,000,000 Pa · s.
　中空封止用樹脂シート全体の６０～１５０℃における硬化前の最低動的粘度が５万Ｐａ・ｓ以上１００万Ｐａ・ｓ以下であると、中空封止用樹脂シートを構成する材料全体が前記中空部により流入し難くすることができる。 When the minimum dynamic viscosity before curing at 60 to 150 ° C. of the entire hollow sealing resin sheet is 50,000 Pa · s or more and 1,000,000 Pa · s or less, the entire material constituting the hollow sealing resin sheet is It can be made difficult to flow in by the hollow portion.
　また、本発明は、中空パッケージの製造方法であって、
　被着体上に配置された１又は複数の電子デバイスを覆うように中空封止用樹脂シートを前記電子デバイス上に前記被着体と前記電子デバイスとの間の中空部を維持しながら積層する積層工程と、
　前記中空封止用樹脂シートを硬化させて封止体を形成する封止体形成工程と
　を含み、
　前記中空封止用樹脂シートは、
　無機充填剤を６８体積％以上の含有量で含み、
　レーザー回折散乱法により測定した前記無機充填剤の粒度分布において、前記中空部の幅を超えるものが１０体積％以上９０体積％以下であり、
　基板に複数のチップがフリップチップ接続されたテスト基板であって、前記チップ間の距離が１００μｍであり、且つ、前記基板と前記チップとの間隙が２０μｍであるものを用い、
　前記テスト基板上に、前記中空封止用樹脂シートを配置した後、前記中空封止用樹脂シート側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧した際の、前記中空封止用樹脂シートを構成する材料のチップ間への進入速度Ａと、前記中空封止用樹脂シートを構成する材料の前記間隙への進入速度Ｂとの比Ａ／Ｂが５以上である。 Further, the present invention is a method for manufacturing a hollow package,
A resin sheet for hollow sealing is laminated on the electronic device while maintaining a hollow portion between the adherend and the electronic device so as to cover one or a plurality of electronic devices arranged on the adherend. Lamination process;
A sealing body forming step of curing the hollow sealing resin sheet to form a sealing body,
The hollow sealing resin sheet is:
Containing an inorganic filler in a content of 68% by volume or more,
In the particle size distribution of the inorganic filler measured by a laser diffraction scattering method, the volume exceeding the width of the hollow portion is 10% by volume to 90% by volume,
A test substrate in which a plurality of chips are flip-chip connected to a substrate, the distance between the chips is 100 μm, and the gap between the substrate and the chip is 20 μm,
After the resin sheet for hollow sealing is placed on the test substrate, the hollow sealing when pressurized from the hollow sealing resin sheet side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr. The ratio A / B between the entry speed A of the material constituting the stopper resin sheet between the chips and the entry speed B of the material constituting the hollow sealing resin sheet into the gap is 5 or more.
　前記構成によれば、中空封止用樹脂シートは、粒径が前記中空部の幅を超える無機充填剤と、粒径が前記中空部の幅以下の無機充填剤との両方が混在している。従って、大小の無機充填剤が密に充填されている。また、このような粒度分布を有する無機充填剤を６８体積％以上と多く含有されている。従って、中空部付近の樹脂（無機充填剤を含む中空封止用樹脂シートを構成する材料全体）に対して流動を規制する作用（チクソトロピー様作用）が付与され、中空部への樹脂進入を効率良く防止することができる。その結果、中空構造を維持しつつ高い歩留まりで中空パッケージを作製することができる。
　また、前記比Ａ／Ｂが５以上であるため、前記積層工程において、電子デバイスを好適に中空封止用樹脂シートに埋め込みでき、且つ、被着体と電子デバイスとの間の空隙には、封止用樹脂シートを構成する材料が流入し難くすることができる。 According to the said structure, the resin sheet for hollow sealing has both the inorganic filler in which a particle size exceeds the width | variety of the said hollow part, and the inorganic filler whose particle size is below the width | variety of the said hollow part. . Therefore, large and small inorganic fillers are closely packed. Further, the inorganic filler having such a particle size distribution is contained as much as 68% by volume or more. Therefore, a resin (thixotropy-like action) that restricts flow is imparted to the resin in the vicinity of the hollow part (the whole material constituting the resin sheet for hollow sealing containing an inorganic filler), and the resin enters the hollow part efficiently. It can be well prevented. As a result, a hollow package can be manufactured with a high yield while maintaining the hollow structure.
Further, since the ratio A / B is 5 or more, in the laminating step, the electronic device can be suitably embedded in the hollow sealing resin sheet, and the gap between the adherend and the electronic device is The material constituting the sealing resin sheet can be made difficult to flow.
本発明の一実施形態に係る樹脂シートを模式的に示す断面図である。It is sectional drawing which shows typically the resin sheet which concerns on one Embodiment of this invention. テスト基板を説明するための正面模式図である。It is a front schematic diagram for demonstrating a test board | substrate. 比Ａ／Ｂの求め方を説明するための図である。It is a figure for demonstrating how to obtain | require ratio A / B. 比Ａ／Ｂの求め方を説明するための図である。It is a figure for demonstrating how to obtain | require ratio A / B. 比Ａ／Ｂの求め方を説明するための図である。It is a figure for demonstrating how to obtain | require ratio A / B. 無機充填剤の含有量と断面ＳＥＭ画像における無機充填剤の占有面積との相関を示すグラフである。It is a graph which shows the correlation with content of an inorganic filler, and the occupation area of the inorganic filler in a cross-sectional SEM image. 本発明の一実施形態に係る中空パッケージの製造方法の一工程を模式的に示す図である。It is a figure which shows typically 1 process of the manufacturing method of the hollow package which concerns on one Embodiment of this invention. 本発明の一実施形態に係る中空パッケージの製造方法の一工程を模式的に示す図である。It is a figure which shows typically 1 process of the manufacturing method of the hollow package which concerns on one Embodiment of this invention. 本発明の一実施形態に係る中空パッケージの製造方法の一工程を模式的に示す図である。It is a figure which shows typically 1 process of the manufacturing method of the hollow package which concerns on one Embodiment of this invention. 実施例２に係る中空封止用樹脂シートの切断面のＳＥＭ観察像である。4 is a SEM observation image of a cut surface of a hollow sealing resin sheet according to Example 2. FIG.
　以下に実施形態を掲げ、本発明を詳細に説明するが、本発明はこれらの実施形態のみに限定されるものではない。 Hereinafter, the present invention will be described in detail with reference to embodiments, but the present invention is not limited only to these embodiments.
　［中空封止用樹脂シート］ [Hollow sealing resin sheet]
　図１は、本発明の一実施形態に係る中空封止用樹脂シート（以下、単に「樹脂シート」ともいう。）１１を模式的に示す断面図である。樹脂シート１１は、代表的に、ポリエチレンテレフタレート（ＰＥＴ）フィルムなどの支持体１１ａ上に積層された状態で提供される。なお、支持体１１ａには樹脂シート１１の剥離を容易に行うために離型処理が施されていてもよい。 FIG. 1 is a cross-sectional view schematically showing a hollow sealing resin sheet (hereinafter also simply referred to as “resin sheet”) 11 according to an embodiment of the present invention. The resin sheet 11 is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Note that a release treatment may be performed on the support 11a in order to easily peel off the resin sheet 11.
　図２Ａは、テスト基板を説明するための正面模式図である。
　図２Ａに示すように、テスト基板５０は、基板５２に複数のチップ５４がフリップチップ接続された構成である。チップ５４は、バンプ５６により基板５２にフリップチップ接続されている。チップ５４間の距離は、１００μｍであり、基板５２とチップ５４との間隙５８は、２０μｍである。 FIG. 2A is a schematic front view for explaining the test substrate.
As shown in FIG. 2A, the test substrate 50 has a configuration in which a plurality of chips 54 are flip-chip connected to the substrate 52. The chip 54 is flip-chip connected to the substrate 52 by bumps 56. The distance between the chips 54 is 100 μm, and the gap 58 between the substrate 52 and the chip 54 is 20 μm.
　樹脂シート１１は、テスト基板５０上に、樹脂シート１１を配置した後、樹脂シート１１側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧した際の、樹脂シート１１を構成する材料（以下、「樹脂」ともいう）のチップ５４間への進入速度Ａと、樹脂の間隙５８への進入速度Ｂとの比Ａ／Ｂが５以上であり、８以上が好ましく、１０以上がより好ましい。また、前記比Ａ／Ｂは、大きい方が好ましいが、例えば３００以下である。前記比Ａ／Ｂが５以上であるため、電子デバイスを好適に樹脂シート１１に埋め込みでき、且つ、被着体と電子デバイスとの間の空隙には、樹脂シート１１を構成する材料が流入し難くすることができる。 The resin sheet 11 constitutes the resin sheet 11 when the resin sheet 11 is disposed on the test substrate 50 and then pressed from the resin sheet 11 side at 70 ° C., a pressure of 1 kgf / cm 2 , and a vacuum degree of 10 Torr. The ratio A / B between the material entry speed A between the chips 54 and the resin entry speed B into the gap 58 is 5 or more, preferably 8 or more, and 10 or more. More preferred. The ratio A / B is preferably larger, but is, for example, 300 or less. Since the ratio A / B is 5 or more, the electronic device can be suitably embedded in the resin sheet 11, and the material constituting the resin sheet 11 flows into the gap between the adherend and the electronic device. Can be difficult.
　以下、比Ａ／Ｂの求め方を具体的に説明する。
　図２Ｂ～図２Ｄは、比Ａ／Ｂの求め方を説明するための図である。
　まず、図２Ｂに示すように、テスト基板５０上に、樹脂シート１１を配置する。次に、図２Ｃに示すように、樹脂シート１１側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧する。そうすると、樹脂は、圧力によりチップ５４間へと進入する。この際の樹脂の先端の進行方向の速度を測定する。これを進入速度Ａとする。なお、進入速度Ａは、樹脂シート１１を構成する材料が基板５２に到達するまでの範囲内で測定する。その後、加圧を続けると、図２Ｄに示すように、樹脂は、基板５２に到達する。その後、そのまま加圧を続け、樹脂の先端の進行方向の速度を測定する。具体的には、樹脂の先端の間隙５８方向への速度を測定する。これを進入速度Ｂとする。その後、比Ａ／Ｂを算出する。 Hereinafter, the method for obtaining the ratio A / B will be described in detail.
2B to 2D are diagrams for explaining how to obtain the ratio A / B.
First, as illustrated in FIG. 2B, the resin sheet 11 is disposed on the test substrate 50. Next, as shown in FIG. 2C, pressurization is performed from the resin sheet 11 side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr. Then, the resin enters between the chips 54 by pressure. At this time, the speed in the traveling direction of the tip of the resin is measured. This is the approach speed A. The approach speed A is measured within a range until the material constituting the resin sheet 11 reaches the substrate 52. Thereafter, when the pressurization is continued, the resin reaches the substrate 52 as shown in FIG. 2D. Thereafter, pressurization is continued as it is, and the speed of the resin tip in the traveling direction is measured. Specifically, the speed of the resin tip in the direction of the gap 58 is measured. This is the approach speed B. Thereafter, the ratio A / B is calculated.
　樹脂シート１１はエポキシ樹脂、及びフェノール樹脂を含むことが好ましい。これにより、良好な熱硬化性が得られる。 Resin sheet 11 preferably contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
　エポキシ樹脂としては、特に限定されるものではない。例えば、トリフェニルメタン型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、変性ビスフェノールＡ型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、変性ビスフェノールＦ型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、フェノキシ樹脂などの各種のエポキシ樹脂を用いることができる。これらエポキシ樹脂は単独で用いてもよいし２種以上併用してもよい。 The epoxy resin is not particularly limited. For example, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
　エポキシ樹脂の硬化後の靭性及びエポキシ樹脂の反応性を確保する観点からは、エポキシ当量１５０～２５０、軟化点もしくは融点が５０～１３０℃の常温で固形のものが好ましく、なかでも、成型性および信頼性の観点から、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビフェニル型エポキシ樹脂などがより好ましい。 From the viewpoint of ensuring the toughness of the epoxy resin after curing and the reactivity of the epoxy resin, those having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C. are preferably solid, and in particular, moldability and From the viewpoint of reliability, bisphenol F type epoxy resin, bisphenol A type epoxy resin, biphenyl type epoxy resin and the like are more preferable.
　フェノール樹脂は、エポキシ樹脂との間で硬化反応を生起するものであれば特に限定されるものではない。例えば、フェノールノボラック樹脂、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ジシクロペンタジエン型フェノール樹脂、クレゾールノボラック樹脂、レゾール樹脂などが用いられる。これらフェノール樹脂は単独で用いてもよいし、２種以上併用してもよい。 The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more.
　フェノール樹脂としては、エポキシ樹脂との反応性の観点から、水酸基当量が７０～２５０、軟化点が５０～１１０℃のものを用いることが好ましく、なかでも硬化反応性が高く安価であるという観点から、フェノールノボラック樹脂を好適に用いることができる。また、信頼性の観点から、フェノールアラルキル樹脂やビフェニルアラルキル樹脂のような低吸湿性のものも好適に用いることができる。 As the phenol resin, those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, from the viewpoint of high curing reactivity and low cost. A phenol novolac resin can be preferably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
　エポキシ樹脂とフェノール樹脂の配合割合は、硬化反応性という観点から、エポキシ樹脂中のエポキシ基１当量に対して、フェノール樹脂中の水酸基の合計が０．７～１．５当量となるように配合することが好ましく、より好ましくは０．９～１．２当量である。 The blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
　樹脂シート１１中のエポキシ樹脂及びフェノール樹脂の合計含有量の下限は、２．０重量％以上が好ましく、３．０重量％以上がより好ましい。２．０重量％以上であると、電子デバイス、基板などに対する接着力が良好に得られる。一方、上記合計含有量の上限は、２０重量％以下が好ましく、１５重量％以下がより好ましい。２０重量％以下であると、樹脂シートの吸湿性を低減させることができる。 The lower limit of the total content of epoxy resin and phenol resin in the resin sheet 11 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic device, a board | substrate, etc. is acquired favorably as it is 2.0 weight% or more. On the other hand, the upper limit of the total content is preferably 20% by weight or less, and more preferably 15% by weight or less. The hygroscopicity of a resin sheet can be reduced as it is 20 weight% or less.
　樹脂シート１１は、熱可塑性樹脂を含むことが好ましい。これにより、得られる中空封止用樹脂シートの耐熱性、可撓性、強度を向上させることができる。 The resin sheet 11 preferably contains a thermoplastic resin. Thereby, the heat resistance of the resin sheet for hollow sealing obtained, flexibility, and intensity | strength can be improved.
　熱可塑性樹脂としては、天然ゴム、ブチルゴム、イソプレンゴム、クロロプレンゴム、エチレン－酢酸ビニル共重合体、エチレン－アクリル酸共重合体、エチレン－アクリル酸エステル共重合体、ポリブタジエン樹脂、ポリカーボネート樹脂、熱可塑性ポリイミド樹脂、６－ナイロンや６，６－ナイロンなどのポリアミド樹脂、フェノキシ樹脂、アクリル樹脂、ＰＥＴやＰＢＴなどの飽和ポリエステル樹脂、ポリアミドイミド樹脂、フッ素樹脂、スチレン－イソブチレン－スチレンブロック共重合体などが挙げられる。これらの熱可塑性樹脂は単独で、又は２種以上を併用して用いることができる。なかでも、可とう性が得やすく、エポキシ樹脂との分散性が良好であるという観点から、アクリル樹脂が好ましい。 Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity. Polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer Can be mentioned. These thermoplastic resins can be used alone or in combination of two or more. Especially, an acrylic resin is preferable from a viewpoint that a flexibility is easy to obtain and a dispersibility with an epoxy resin is favorable.
　前記アクリル樹脂としては、特に限定されるものではなく、炭素数３０以下、特に炭素数４～１８の直鎖若しくは分岐のアルキル基を有するアクリル酸又はメタクリル酸のエステルの１種又は２種以上を成分とする重合体（アクリル共重合体）等が挙げられる。前記アルキル基としては、例えばメチル基、エチル基、プロピル基、イソプロピル基、ｎ－ブチル基、ｔ－ブチル基、イソブチル基、アミル基、イソアミル基、ヘキシル基、へプチル基、シクロヘキシル基、２－エチルヘキシル基、オクチル基、イソオクチル基、ノニル基、イソノニル基、デシル基、イソデシル基、ウンデシル基、ラウリル基、トリデシル基、テトラデシル基、ステアリル基、オクタデシル基、又はドデシル基等が挙げられる。 The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.
　前記アクリル樹脂のガラス転移温度（Ｔｇ）は、５０℃以下が好ましく、－７０～２０℃がより好ましく、－５０～０℃がさらに好ましい。５０℃以下とすることにより、樹脂シート１１の粘度と可とう性高めることができる。樹脂シート１１の粘度と可とう性を高めることにより、中空部（図４Ａの中空部１４参照）への樹脂進入を効率良く防止することができる。 The glass transition temperature (Tg) of the acrylic resin is preferably 50 ° C. or less, more preferably −70 to 20 ° C., and further preferably −50 to 0 ° C. By setting it as 50 degrees C or less, the viscosity and flexibility of the resin sheet 11 can be improved. By increasing the viscosity and flexibility of the resin sheet 11, it is possible to efficiently prevent the resin from entering the hollow portion (see the hollow portion 14 in FIG. 4A).
　前記アクリル樹脂のなかでも、重量平均分子量が５万以上のものが好ましく、１０万～２００万のものがより好ましく、３０万～１６０万のものがさらに好ましい。上記数値範囲内であると、樹脂シート１１の粘度と可とう性をより高くすることができる。なお、重量平均分子量は、ＧＰＣ（ゲル・パーミエーション・クロマトグラフィー）により測定し、ポリスチレン換算により算出された値である。 Among the acrylic resins, those having a weight average molecular weight of 50,000 or more are preferable, 100,000 to 2,000,000 are more preferable, and 300,000 to 1,600,000 are more preferable. Within the above numerical range, the viscosity and flexibility of the resin sheet 11 can be further increased. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
　また、前記重合体を形成する他のモノマーとしては、特に限定されるものではなく、例えばアクリル酸、メタクリル酸、カルボキシエチルアクリレート、カルボキシペンチルアクリレート、イタコン酸、マレイン酸、フマール酸若しくはクロトン酸等の様なカルボキシル基含有モノマー、無水マレイン酸若しくは無水イタコン酸等の様な酸無水物モノマー、（メタ）アクリル酸２－ヒドロキシエチル、（メタ）アクリル酸２－ヒドロキシプロピル、（メタ）アクリル酸４－ヒドロキシブチル、（メタ）アクリル酸６－ヒドロキシヘキシル、（メタ）アクリル酸８－ヒドロキシオクチル、（メタ）アクリル酸１０－ヒドロキシデシル、（メタ）アクリル酸１２－ヒドロキシラウリル若しくは（４－ヒドロキシメチルシクロヘキシル）－メチルアクリレート等の様なヒドロキシル基含有モノマー、スチレンスルホン酸、アリルスルホン酸、２－（メタ）アクリルアミド－２－メチルプロパンスルホン酸、（メタ）アクリルアミドプロパンスルホン酸、スルホプロピル（メタ）アクリレート若しくは（メタ）アクリロイルオキシナフタレンスルホン酸等の様なスルホン酸基含有モノマー、又は２－ヒドロキシエチルアクリロイルホスフェート等の様な燐酸基含有モノマーが挙げられる。なかでも、エポキシ樹脂と反応して、樹脂シート１１の粘度を高くできる観点から、カルボキシル基含有モノマー、グリシジル基（エポキシ基）含有モノマー、ヒドロキシル基含有モノマーうちの少なくとも１つを含むことが好ましい。 In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers, maleic anhydride or acid anhydride monomers such as itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-methacrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyl Hydroxyl group-containing monomers such as acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate. Especially, it is preferable to include at least one of a carboxyl group-containing monomer, a glycidyl group (epoxy group) -containing monomer, and a hydroxyl group-containing monomer from the viewpoint of increasing the viscosity of the resin sheet 11 by reacting with the epoxy resin.
　樹脂シート１１中の熱可塑性樹脂の含有量は、０．２重量％以上が好ましく、０．５重量％以上がより好ましい。上記含有量が０．２重量％以上であると、樹脂シートの柔軟性、可撓性が得られる。樹脂シート１１中の熱可塑性樹脂の含有量は、１０重量％以下が好ましく、５重量％以下がより好ましい。１０重量％以下であると、電子デバイスや基板に対する樹脂シートの接着性が良好である。 The content of the thermoplastic resin in the resin sheet 11 is preferably 0.2% by weight or more, and more preferably 0.5% by weight or more. The softness | flexibility of a resin sheet and flexibility are obtained as the said content is 0.2 weight% or more. The content of the thermoplastic resin in the resin sheet 11 is preferably 10% by weight or less, and more preferably 5% by weight or less. When it is 10% by weight or less, the adhesiveness of the resin sheet to the electronic device or the substrate is good.
　樹脂シート１１は、無機充填剤を６８体積％以上の含有量で含む。上記含有量は７２体積％以上が好ましく、７５体積％以上がより好ましい。また、上記含有量は、９１体積％以下が好ましく、８８体積％以下がより好ましい。また、樹脂シート１１は、断面ＳＥＭ画像における無機充填剤の占有面積が５０％以上であることが好ましく、６０％以上９０％以下であることがより好ましく、６５％以上８０％以下であることがさらに好ましい。無機充填剤の含有量を上記範囲とすることにより、中空構造付近における樹脂へのチクソトロピー様作用を好適に付与して中空構造を維持することができるとともに、硬化後の線膨張係数を低下させてパッケージの反りを防止し、高信頼性の中空パッケージを得ることができる。なお、無機充填剤が複数種の粒子の混合物である場合は、その混合物の含有量が上記範囲を満たす。
　なお、本発明者らは、無機充填剤の含有量と断面ＳＥＭ画像における無機充填剤の占有面積が相関することを確認している。図３は、無機充填剤の含有量と断面ＳＥＭ画像における無機充填剤の占有面積との相関を示すグラフである。
　無機充填剤としては、シリカを用い、レーザー回折散乱法により測定した粒度分布において、２０μｍを超えるものが４２体積％（２０μｍ以下のものが５８体積％）であるものを用いた。この無機充填剤の含有量を順次変更したサンプルを作製し、各サンプルについて断面ＳＥＭ画像における無機充填剤の占有面積を求め、これをプロットした。図３に示すように、この無機充填剤において、無機充填剤の含有量と断面ＳＥＭ画像における無機充填剤の占有面積は良い相関を示していることがわかる。 The resin sheet 11 contains an inorganic filler in a content of 68% by volume or more. The content is preferably 72% by volume or more, and more preferably 75% by volume or more. The content is preferably 91% by volume or less, more preferably 88% by volume or less. In addition, the resin sheet 11 preferably has an area occupied by the inorganic filler in the cross-sectional SEM image of 50% or more, more preferably 60% or more and 90% or less, and 65% or more and 80% or less. Further preferred. By setting the content of the inorganic filler in the above range, the thixotropy-like action can be suitably imparted to the resin in the vicinity of the hollow structure to maintain the hollow structure, and the linear expansion coefficient after curing is reduced. Package warpage can be prevented, and a highly reliable hollow package can be obtained. In addition, when the inorganic filler is a mixture of a plurality of types of particles, the content of the mixture satisfies the above range.
The present inventors have confirmed that the content of the inorganic filler correlates with the area occupied by the inorganic filler in the cross-sectional SEM image. FIG. 3 is a graph showing the correlation between the content of the inorganic filler and the area occupied by the inorganic filler in the cross-sectional SEM image.
As the inorganic filler, silica was used, and the particle size distribution measured by the laser diffraction scattering method was 42% by volume exceeding 20 μm (58% by volume below 20 μm). Samples in which the content of the inorganic filler was sequentially changed were prepared, and the area occupied by the inorganic filler in the cross-sectional SEM image was obtained for each sample, and this was plotted. As shown in FIG. 3, in this inorganic filler, it turns out that the content of an inorganic filler and the occupation area of the inorganic filler in a cross-sectional SEM image show a good correlation.
　無機充填剤の含有量は、「重量％」を単位としても説明できる。代表的にシリカ、もしくはアルミナの含有量について、「重量％」を単位として説明する。シリカは通常、比重２．２ｇ／ｃｍ３であるので、シリカの含有量（重量％）の好適範囲は以下のとおりである。すなわち、樹脂シート１１中のシリカの含有量は、８３重量％以上が好ましく、８５重量％以上がより好ましい。樹脂シート１１中のシリカの含有量は、９５重量％以下が好ましく、９３重量％以下がより好ましい。 The content of the inorganic filler can be explained by using “wt%” as a unit. Typically, the content of silica or alumina will be described with “% by weight” as a unit. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is as follows. That is, the content of silica in the resin sheet 11 is preferably 83% by weight or more, and more preferably 85% by weight or more. 95 weight% or less is preferable and, as for content of the silica in the resin sheet 11, 93 weight% or less is more preferable.
　アルミナは通常、比重３．９ｇ／ｃｍ３であるので、アルミナの含有量（重量％）の好適範囲は以下のとおりである。すなわち、樹脂シート１１中のアルミナの含有量は、８９重量％以上が好ましく、９１重量％以上がより好ましい。樹脂シート１１中のアルミナの含有量は、９７重量％以下が好ましく、９６重量％以下がより好ましい。 Since alumina usually has a specific gravity of 3.9 g / cm 3 , the preferred range of the alumina content (% by weight) is as follows. That is, the content of alumina in the resin sheet 11 is preferably 89% by weight or more, and more preferably 91% by weight or more. 97 weight% or less is preferable and, as for content of the alumina in the resin sheet 11, 96 weight% or less is more preferable.
　樹脂シート１１では、レーザー回折散乱法により測定した前記無機充填剤の粒度分布において、製造する中空パッケージの中空部の幅を超えるものが１０体積％以上９０体積％以下の範囲であり、１５体積％以上８５体積％以下の範囲であることが好ましく、２０体積％以上８０体積％以下の範囲であることがより好ましい。具体的には、例えば、製造する中空パッケージの中空部の幅を２０μｍと想定している場合、前記無機充填剤の粒度分布において、２０μｍを超えるものが１０体積％以上９０体積％以下の範囲であり、１５体積％以上８５体積％以下の範囲であることが好ましく、２０体積％以上８０体積％以下の範囲であることがより好ましい。無機充填剤のレーザー回折散乱法による粒度分布が上記特定の関係にあることにより、中空構造付近における無機充填剤の高充填状態が得られ、これにより樹脂へチクソトロピー様作用を付与して封止時の中空構造への樹脂進入を好適に抑制することができる。なお、無機充填剤が複数種の粒子の混合物である場合は、その混合物の粒度分布が上記関係を満たす。 In the resin sheet 11, in the particle size distribution of the inorganic filler measured by the laser diffraction scattering method, the content exceeding the width of the hollow portion of the hollow package to be manufactured is in the range of 10% by volume to 90% by volume, and 15% by volume. It is preferably in the range of 85% by volume or less and more preferably in the range of 20% by volume or more and 80% by volume or less. Specifically, for example, when the width of the hollow part of the hollow package to be manufactured is assumed to be 20 μm, in the particle size distribution of the inorganic filler, those exceeding 20 μm are in the range of 10% by volume to 90% by volume. Yes, preferably in the range of 15% by volume to 85% by volume, more preferably in the range of 20% by volume to 80% by volume. When the particle size distribution of the inorganic filler by the laser diffraction scattering method is in the above specific relationship, a high filling state of the inorganic filler in the vicinity of the hollow structure can be obtained, thereby providing a thixotropic-like action to the resin during sealing. Resin intrusion into the hollow structure can be suitably suppressed. When the inorganic filler is a mixture of a plurality of types of particles, the particle size distribution of the mixture satisfies the above relationship.
　無機充填剤の形状は特に限定されず、球状（楕円体状を含む。）、多面体状、多角柱状、扁平形状、不定形状等の任意の形状であってもよいが、中空構造付近での高充填状態の達成や適度な流動性の観点から、球状が好ましい。 The shape of the inorganic filler is not particularly limited, and may be any shape such as a spherical shape (including an ellipsoidal shape), a polyhedron shape, a polygonal column shape, a flat shape, and an indeterminate shape. From the viewpoint of achieving a filling state and appropriate fluidity, a spherical shape is preferable.
　無機充填剤は、特に限定されるものではなく、従来公知の各種充填剤を用いることができ、例えば、石英ガラス、タルク、シリカ（溶融シリカや結晶性シリカなど）、アルミナ、窒化アルミニウム、窒化珪素、窒化ホウ素の粉末が挙げられる。これらは単独で用いてもよいし、２種以上併用してもよい。なかでも、線膨張係数を良好に低減できるという理由から、シリカ、アルミナが好ましく、シリカがより好ましい。 The inorganic filler is not particularly limited, and various conventionally known fillers can be used. For example, quartz glass, talc, silica (such as fused silica or crystalline silica), alumina, aluminum nitride, silicon nitride And boron nitride powder. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
　シリカとしては、シリカ粉末が好ましく、溶融シリカ粉末がより好ましい。溶融シリカ粉末としては、球状溶融シリカ粉末、破砕溶融シリカ粉末が挙げられるが、流動性という観点から、球状溶融シリカ粉末が好ましい。 As silica, silica powder is preferable, and fused silica powder is more preferable. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable.
　無機充填剤の平均粒径は５０μｍ以下の範囲のものを用いることが好ましく、０．１～３０μｍの範囲のものを用いることがより好ましく、０．５～２５μｍの範囲のものを用いることが特に好ましい。なお、平均粒径は、実施例における粒度分布測定の手順に従いＤ５０として求められる。 The average particle diameter of the inorganic filler is preferably 50 μm or less, more preferably 0.1 to 30 μm, and particularly preferably 0.5 to 25 μm. preferable. The average particle diameter is determined as D 50 Following the procedure of particle size distribution measurement in the embodiment.
　樹脂シート１１は、硬化促進剤を含むことが好ましい。 The resin sheet 11 preferably contains a curing accelerator.
　硬化促進剤としては、エポキシ樹脂とフェノール樹脂の硬化を進行させるものであれば特に限定されず、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレートなどの有機リン系化合物；２－フェニル－４，５－ジヒドロキシメチルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾールなどのイミダゾール系化合物；などが挙げられる。なかでも、反応性が良好で硬化物のＴｇが高め易いという理由から、イミダゾール系化合物が好ましい。 The curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Of these, imidazole compounds are preferred because they have good reactivity and are easy to increase the Tg of the cured product.
　硬化促進剤の含有量は、エポキシ樹脂及びフェノール樹脂の合計１００重量部に対して０．１～５重量部が好ましい。 The content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
　樹脂シート１１は、中空成型性に悪影響を与えない程度において、必要に応じ、難燃剤成分を含んでもよい。これにより、部品ショートや発熱などにより発火した際の、燃焼拡大を低減できる。難燃剤組成分としては、例えば水酸化アルミニウム、水酸化マグネシウム、水酸化鉄、水酸化カルシウム、水酸化スズ、複合化金属水酸化物などの各種金属水酸化物；ホスファゼン系難燃剤などを用いることができる。 Resin sheet 11 may contain a flame retardant component as necessary to the extent that it does not adversely affect the hollow moldability. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation. As the flame retardant composition, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
　樹脂シート１１は、シランカップリング剤を含んでいてもよい。シランカップリング剤としては特に限定されず、３－グリシドキシプロピルトリメトキシシランなどが挙げられる。 Resin sheet 11 may contain a silane coupling agent. The silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
　樹脂シート１１中のシランカップリング剤の含有量は、０．１～３重量％が好ましい。０．１重量％以上であると、硬化後の樹脂シートの硬度を高めることができるとともに、吸水率を低減させることができる。一方、上記含有量が３重量％以下であると、アウトガスの発生を抑制することができる。 The content of the silane coupling agent in the resin sheet 11 is preferably 0.1 to 3% by weight. When it is 0.1% by weight or more, the hardness of the cured resin sheet can be increased and the water absorption rate can be reduced. On the other hand, generation | occurrence | production of outgas can be suppressed as the said content is 3 weight% or less.
　樹脂シート１１は、顔料を含むことが好ましい。顔料としては特に限定されず、カーボンブラックなどが挙げられる。 The resin sheet 11 preferably contains a pigment. The pigment is not particularly limited, and examples thereof include carbon black.
　樹脂シート１１中の顔料の含有量は、０．１～２重量％が好ましい。０．１重量％以上であると、良好なマーキング性が得られる。２重量％以下であると、硬化後の樹脂シートの強度を確保することができる。 The content of the pigment in the resin sheet 11 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained. The intensity | strength of the resin sheet after hardening can be ensured as it is 2 weight% or less.
　なお、樹脂組成物には、上記の各成分以外に必要に応じて、他の添加剤を適宜配合できる。 In addition to the above components, other additives can be appropriately added to the resin composition as necessary.
　樹脂シート１１は、１２０℃における有機樹脂成分（無機充填剤を除く有機樹脂成分）の粘度が１Ｐａ・ｓ以上であることが好ましく、３Ｐａ・ｓ以上１００Ｐａ・ｓ以下であることがより好ましく、５Ｐａ・ｓ以上５０Ｐａ・ｓ以下であることがさらに好ましい。１２０℃における有機樹脂成分の粘度が１Ｐａ・ｓ以上であると、有機樹脂成分の粘度が高粘度であるため、有機樹脂成分のみが中空部に染み出すことを抑制することができる。 In the resin sheet 11, the viscosity of the organic resin component (organic resin component excluding the inorganic filler) at 120 ° C. is preferably 1 Pa · s or more, more preferably 3 Pa · s or more and 100 Pa · s or less, and 5 Pa. More preferably, it is s or more and 50 Pa · s or less. When the viscosity of the organic resin component at 120 ° C. is 1 Pa · s or higher, the viscosity of the organic resin component is high, so that only the organic resin component can be prevented from leaking into the hollow portion.
　樹脂シート１１全体の６０～１５０℃における硬化前の最低動的粘度は、５万Ｐａ・ｓ以上１００万Ｐａ・ｓ以下であることが好ましく、８万Ｐａ・ｓ以上８０万Ｐａ・ｓ以下であることがより好ましく、１０万Ｐａ・ｓ以上６０万Ｐａ・ｓ以下であることがさらに好ましい。樹脂シート１１全体の６０～１５０℃における硬化前の最低動的粘度が５万Ｐａ・ｓ以上５０万Ｐａ・ｓ以下であると、樹脂シート１１を構成する材料全体が中空部により流入し難くすることができる。 The minimum dynamic viscosity of the entire resin sheet 11 before curing at 60 to 150 ° C. is preferably 50,000 Pa · s to 1,000,000 Pa · s, preferably 80,000 Pa · s to 800,000 Pa · s. More preferably, it is 100,000 Pa · s or more and 600,000 Pa · s or less. When the minimum dynamic viscosity before curing at 60 to 150 ° C. of the entire resin sheet 11 is 50,000 Pa · s or more and 500,000 Pa · s or less, the entire material constituting the resin sheet 11 is difficult to flow into the hollow portion. be able to.
　［中空封止用樹脂シートの製造方法］
　樹脂シート１１は、適当な溶剤に樹脂シート１１を形成するための樹脂等を溶解、分散させてワニスを調整し、このワニスを支持体１１ａ上に所定厚みとなる様に塗布して塗布膜を形成した後、該塗布膜を所定条件下で乾燥させて形成することができる。塗布方法としては特に限定されず、例えば、ロール塗工、スクリーン塗工、グラビア塗工等が挙げられる。また、乾燥条件としては、例えば乾燥温度７０～１６０℃、乾燥時間１～３０分間の範囲内で行われる。また、セパレータ上にワニスを塗布して塗布膜を形成した後、前記乾燥条件で塗布膜を乾燥させて樹脂シート１１を形成してもよい。その後、支持体１１ａ上に樹脂シート１１をセパレータと共に貼り合わせる。樹脂シート１１が、特に、熱可塑性樹脂（アクリル樹脂）、エポキシ樹脂、フェノール樹脂を含む場合、これらすべてを溶剤に溶解させた上で、塗布、乾燥させる。これにより、樹脂シート１１の粘度を向上させることができ、樹脂成分の中空部への進入を抑制することができる。溶剤としては、メチルエチルケトン、酢酸エチル、トルエン等を挙げることができる。 [Method for producing hollow sealing resin sheet]
The resin sheet 11 is prepared by dissolving and dispersing a resin or the like for forming the resin sheet 11 in an appropriate solvent to adjust the varnish, and applying the varnish on the support 11a to a predetermined thickness to form a coating film. After the formation, the coating film can be formed by drying under predetermined conditions. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, a drying temperature of 70 to 160 ° C. and a drying time of 1 to 30 minutes are performed. Moreover, after apply | coating a varnish on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the resin sheet 11 may be formed. Thereafter, the resin sheet 11 is bonded together with the separator on the support 11a. In particular, when the resin sheet 11 contains a thermoplastic resin (acrylic resin), an epoxy resin, and a phenol resin, all of them are dissolved in a solvent, and then applied and dried. Thereby, the viscosity of the resin sheet 11 can be improved and the approach to the hollow part of a resin component can be suppressed. Examples of the solvent include methyl ethyl ketone, ethyl acetate, toluene and the like.
　樹脂シート１１の厚さは特に限定されないが、例えば、１００～２０００μｍである。上記範囲内であると、良好に電子デバイスを封止することができる。 The thickness of the resin sheet 11 is not particularly limited, but is, for example, 100 to 2000 μm. An electronic device can be favorably sealed as it is in the said range.
　樹脂シート１１は、単層構造であってもよいし、２以上の樹脂シートを積層した多層構造であってもよいが、層間剥離のおそれがなく、シート厚の均一性が高く、低吸湿化し易いという理由から、単層構造が好ましい。
　なお、樹脂シート１１が多層構造である場合、電子デバイスに接する層が、（１）無機充填剤を６８体積％以上の含有量で含み、（２）前記無機充填剤の前記粒度分布において、前記中空部の幅を超えるものが１０体積％以上９０体積％以下であり、（３）前記比Ａ／Ｂが５以上であればよく、他の層は、上記（１）～（３）の条件を満たさなくてもよい。電子デバイスに接する層が、上記（１）～（３）の条件を満たせば、中空部への樹脂進入を効率良く防止することができるからである。 The resin sheet 11 may have a single layer structure or a multilayer structure in which two or more resin sheets are laminated, but there is no fear of delamination, the sheet thickness is highly uniform, and the moisture absorption is reduced. A single layer structure is preferred because it is easy.
When the resin sheet 11 has a multilayer structure, the layer in contact with the electronic device includes (1) an inorganic filler in a content of 68% by volume or more, and (2) in the particle size distribution of the inorganic filler, What exceeds the width of the hollow portion is 10% by volume or more and 90% by volume or less, (3) the ratio A / B may be 5 or more, and the other layers may satisfy the above conditions (1) to (3). Does not have to be satisfied. This is because if the layer in contact with the electronic device satisfies the above conditions (1) to (3), the resin can be efficiently prevented from entering the hollow portion.
　樹脂シート１１は、ＳＡＷ（Ｓｕｒｆａｃｅ　Ａｃｏｕｓｔｉｃ　Ｗａｖｅ）フィルタ；圧力センサ、振動センサなどのＭＥＭＳ（Ｍｉｃｒｏ　Ｅｌｅｃｔｒｏ　Ｍｅｃｈａｎｉｃａｌ　Ｓｙｓｔｅｍｓ）；ＬＳＩなどのＩＣ、トランジスタなどの半導体；コンデンサ；抵抗；ＣＭＯＳセンサなどの電子デバイスの封止に使用される。なかでも、中空封止が必要な電子デバイス（具体的には、ＳＡＷフィルタ、ＭＥＭＳ）の封止に好適に使用でき、特にＳＡＷフィルタの封止に特に好適に使用できる。 The resin sheet 11 is a SAW (Surface Acoustic Wave) filter; MEMS (Micro Electro Mechanical Systems) such as pressure sensors and vibration sensors; ICs such as LSIs; semiconductors such as transistors; capacitors; resistors; sealings of electronic devices such as CMOS sensors. Used for stopping. Especially, it can use suitably for sealing of the electronic device (specifically SAW filter, MEMS) which needs hollow sealing, and can use it especially especially especially for sealing of a SAW filter.
　［中空パッケージの製造方法］
　図４Ａ～図４Ｃはそれぞれ、本発明の一実施形態に係る中空パッケージの製造方法の一工程を模式的に示す図である。中空封止方法としては特に限定されず、従来公知の方法で封止できる。例えば、被着体上の電子デバイスを覆うように未硬化の樹脂シート１１を基板上に中空構造を維持しながら積層（載置）し、次いで樹脂シート１１を硬化させて封止する方法などが挙げられる。被着体としては特に限定されず、例えば、プリント配線基板、セラミック基板、シリコン基板、金属基板等が挙げられる。本実施形態では、プリント配線基板１２上に搭載されたＳＡＷチップ１３を樹脂シート１１により中空封止して中空パッケージを作製する。 [Method of manufacturing hollow package]
FIG. 4A to FIG. 4C are diagrams schematically showing one step of the method for manufacturing the hollow package according to the embodiment of the present invention. It does not specifically limit as a hollow sealing method, It can seal by a conventionally well-known method. For example, a method of laminating (mounting) an uncured resin sheet 11 on a substrate while maintaining a hollow structure so as to cover an electronic device on an adherend, and then curing and sealing the resin sheet 11 Can be mentioned. The adherend is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a silicon substrate, and a metal substrate. In the present embodiment, the SAW chip 13 mounted on the printed wiring board 12 is hollow-sealed with the resin sheet 11 to produce a hollow package.
　（ＳＡＷチップ搭載基板準備工程）
　ＳＡＷチップ搭載基板準備工程では、複数のＳＡＷチップ１３が搭載されたプリント配線基板１２を準備する（図４Ａ参照）。ＳＡＷチップ１３は、所定の櫛形電極が形成された圧電結晶を公知の方法でダイシングして個片化することにより形成できる。ＳＡＷチップ１３のプリント配線基板１２への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。ＳＡＷチップ１３とプリント配線基板１２とはバンプなどの突起電極１３ａを介して電気的に接続されている。また、ＳＡＷチップ１３とプリント配線基板１２との間は、ＳＡＷフィルタ表面での表面弾性波の伝播を阻害しないように中空部１４を維持するようになっている。ＳＡＷチップ１３とプリント配線基板１２との間の距離（中空部の幅）は適宜設定でき、一般的には１０～１００μｍ程度である。 (SAW chip mounting substrate preparation process)
In the SAW chip mounting board preparing step, a printed wiring board 12 on which a plurality of SAW chips 13 are mounted is prepared (see FIG. 4A). The SAW chip 13 can be formed by dicing a piezoelectric crystal on which predetermined comb-shaped electrodes are formed by a known method. For mounting the SAW chip 13 on the printed wiring board 12, a known device such as a flip chip bonder or a die bonder can be used. The SAW chip 13 and the printed wiring board 12 are electrically connected via protruding electrodes 13a such as bumps. In addition, a hollow portion 14 is maintained between the SAW chip 13 and the printed wiring board 12 so as not to inhibit the propagation of surface acoustic waves on the surface of the SAW filter. The distance (width of the hollow portion) between the SAW chip 13 and the printed wiring board 12 can be set as appropriate, and is generally about 10 to 100 μm.
　（封止工程）
　封止工程では、ＳＡＷチップ１３を覆うようにプリント配線基板１２へ樹脂シート１１を積層し、ＳＡＷチップ１３を樹脂シート１１で樹脂封止する（図４Ｂ参照）。樹脂シート１１は、ＳＡＷチップ１３及びそれに付随する要素を外部環境から保護するための封止樹脂として機能する。 (Sealing process)
In the sealing step, the resin sheet 11 is laminated on the printed wiring board 12 so as to cover the SAW chip 13, and the SAW chip 13 is resin-sealed with the resin sheet 11 (see FIG. 4B). The resin sheet 11 functions as a sealing resin for protecting the SAW chip 13 and its accompanying elements from the external environment.
　樹脂シート１１をプリント配線基板１２上に積層する方法は特に限定されず、熱プレスやラミネータなど公知の方法により行うことができる。熱プレス条件としては、温度が、例えば、４０～１５０℃、好ましくは５０～１２０℃であり、圧力が、例えば、０．１～１０ＭＰａ、好ましくは０．５～８ＭＰａであり、時間が、例えば０．３～１０分間、好ましくは０．５～５分間である。また、樹脂シート１１のＳＡＷチップ１３及びプリント配線基板１２への密着性および追従性の向上を考慮すると、減圧条件下（例えば０．０１～５ｋＰａ）においてプレスすることが好ましい。
　樹脂シート１１は、（１）無機充填剤を６８体積％以上の含有量で含み、（２）前記無機充填剤の前記粒度分布において、前記中空部の幅を超えるものが１０体積％以上９０体積％以下であり、（３）前記比Ａ／Ｂが５以上であるため、中空部１４への樹脂進入は、抑制されている。 The method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited, and can be performed by a known method such as hot pressing or laminator. As hot press conditions, the temperature is, for example, 40 to 150 ° C., preferably 50 to 120 ° C., the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. In view of improving the adhesion and followability of the resin sheet 11 to the SAW chip 13 and the printed wiring board 12, it is preferable to press under reduced pressure conditions (eg, 0.01 to 5 kPa).
The resin sheet 11 includes (1) an inorganic filler in a content of 68% by volume or more, and (2) 10% by volume or more and 90% by volume of the particle size distribution of the inorganic filler that exceeds the width of the hollow part. %, And (3) since the ratio A / B is 5 or more, resin intrusion into the hollow portion 14 is suppressed.
　（封止体形成工程）
　封止体形成工程では、樹脂シート１１を熱硬化処理して封止体１５を形成する（図４Ｂ参照）。熱硬化処理の条件として、加熱温度が好ましくは１００℃以上、より好ましくは１２０℃以上である。一方、加熱温度の上限が、好ましくは２００℃以下、より好ましくは１８０℃以下である。加熱時間が、好ましくは１０分以上、より好ましくは３０分以上である。一方、加熱時間の上限が、好ましくは１８０分以下、より好ましくは１２０分以下である。また、必要に応じて加圧してもよく、好ましくは０．１ＭＰａ以上、より好ましくは０．５ＭＰａ以上である。一方、上限は好ましくは１０ＭＰａ以下、より好ましくは５ＭＰａ以下である。 (Sealing body forming process)
In the sealing body forming step, the resin sheet 11 is thermoset to form the sealing body 15 (see FIG. 4B). As the conditions for the thermosetting treatment, the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The heating time is preferably 10 minutes or more, more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less. Moreover, you may pressurize as needed, Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more. On the other hand, the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
　（ダイシング工程）
　続いて、封止体１５のダイシングを行ってもよい（図４Ｃ参照）。これにより、ＳＡＷチップ１３単位での中空パッケージ１８を得ることができる。 (Dicing process)
Subsequently, dicing of the sealing body 15 may be performed (see FIG. 4C). Thereby, the hollow package 18 in the SAW chip 13 unit can be obtained.
　（基板実装工程）
　必要に応じて、中空パッケージ１８に対して再配線及びバンプを形成し、これを別途の基板（図示せず）に実装する基板実装工程を行うことができる。中空パッケージ１８の基板への実装には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。 (Board mounting process)
If necessary, a substrate mounting process can be performed in which rewiring and bumps are formed on the hollow package 18 and mounted on a separate substrate (not shown). For mounting the hollow package 18 on the substrate, a known device such as a flip chip bonder or a die bonder can be used.
　以下に、この発明の好適な実施例を例示的に詳しく説明する。ただし、この実施例に記載されている材料や配合量などは、特に限定的な記載がない限りは、この発明の範囲をそれらのみに限定する趣旨のものではない。 Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified.
　実施例で使用した成分について説明する。
　エポキシ樹脂：新日鐵化学（株）製のＹＳＬＶ－８０ＸＹ（ビスフェノールＦ型エポキシ樹脂、エポキン当量２００ｇ／ｅｑ．、軟化点８０℃）
　フェノール樹脂：群栄化学製のＬＶＲ８２１０ＤＬ（ノボラック型フェノール樹脂、水酸基当量１０４ｇ／ｅｑ．、軟化点６０℃）
　熱可塑性樹脂：カルボキシル基含有のアクリル酸エステル共重合体、重量平均分子量：約６０万、ガラス転移温度（Ｔｇ）：－３５℃）
　無機充填剤：電気化学工業製のＦＢ－９４５４ＦＣ（平均粒径１９μｍ）
　カーボンブラック：三菱化学社製の＃２０
　硬化促進剤：四国化成工業社製の２ＰＨＺ－ＰＷ（２－フェニル－４，５－ジヒドロキシメチルイミダゾール） The components used in the examples will be described.
Epoxy resin: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq., Softening point 80 ° C.)
Phenol resin: LVR8210DL (Novolak-type phenol resin, hydroxyl group equivalent 104 g / eq., Softening point 60 ° C.) manufactured by Gunei Chemical
Thermoplastic resin: carboxyl group-containing acrylate copolymer, weight average molecular weight: about 600,000, glass transition temperature (Tg): -35 ° C)
Inorganic filler: FB-9454FC (average particle size 19 μm) manufactured by Denki Kagaku Kogyo
Carbon black: # 20 manufactured by Mitsubishi Chemical
Curing accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
　［実施例、及び、比較例］
　表１に記載の配合比に従い、各成分を溶剤としてのメチルエチルケトンに溶解、分散させ、濃度９０重量％のワニスを得た。このワニスを、シリコーン離型処理した厚さが３８μｍのポリエチレンテレフタレートフィルムからなる離型処理フィルム上に塗布した後、１１０℃で５分間乾燥させた。これにより、厚さ６５μｍのシートを得た。このシートを４層積層させて厚さ２６０μｍの中空封止用樹脂シートを作製した。 [Examples and comparative examples]
According to the blending ratio shown in Table 1, each component was dissolved and dispersed in methyl ethyl ketone as a solvent to obtain a varnish having a concentration of 90% by weight. This varnish was applied on a release treatment film made of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment with silicone, and then dried at 110 ° C. for 5 minutes. As a result, a sheet having a thickness of 65 μm was obtained. Four layers of this sheet were laminated to prepare a hollow sealing resin sheet having a thickness of 260 μm.
　（無機充填剤の粒度分布の測定）
　実施例及び比較例のそれぞれの中空封止用樹脂シートをるつぼに入れ、大気雰囲気下、７００℃で２時間強熱して灰化させた。得られた灰分を純水中に分散させて１０分間超音波処理し、レーザー回折散乱式粒度分布測定装置（ベックマンコールター社製、「ＬＳ　１３　３２０」；湿式法）を用いて粒度分布（体積基準）を求めた。なお、中空封止用樹脂シートの組成として無機充填剤以外は有機成分であり、上記の強熱処理により実質的に全ての有機成分が焼失することから、得られる灰分を無機充填剤とみなして測定を行った。結果を表１に示す。 (Measurement of particle size distribution of inorganic filler)
Each of the hollow sealing resin sheets of Examples and Comparative Examples was put in a crucible and ignited at 700 ° C. for 2 hours in an air atmosphere to be incinerated. The obtained ash was dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and the particle size distribution (volume basis) using a laser diffraction / scattering particle size distribution analyzer (“LS 13 320” manufactured by Beckman Coulter, Inc .; wet method). ) In addition, the composition of the resin sheet for hollow sealing is an organic component other than the inorganic filler, and since substantially all the organic components are burned off by the above-described strong heat treatment, the ash content obtained is measured as an inorganic filler. Went. The results are shown in Table 1.
　（中空封止用樹脂シートの最低動的粘度の測定）
　中空封止用樹脂シートの６０～１５０℃における熱硬化前の最低動的粘度を測定した。動的粘度は、ＴＡインスツルメント社製粘弾性測定装置ＡＲＥＳを用いて、パラレルプレート法により測定した値とした。より詳細には、ギャップ１μｍ、回転プレート直径８ｍｍ、周波数０．１Ｈｚ、歪み０．１％、昇温速度１０℃／分の条件にて、５０℃から１７０℃の範囲で粘度を測定し、その際に得られる最低粘度を最低動的粘度とした。結果を表１に示す。 (Measurement of minimum dynamic viscosity of resin sheet for hollow sealing)
The minimum dynamic viscosity of the hollow sealing resin sheet before thermosetting at 60 to 150 ° C. was measured. The dynamic viscosity was a value measured by a parallel plate method using a viscoelasticity measuring device ARES manufactured by TA Instruments. More specifically, the viscosity was measured in the range of 50 ° C. to 170 ° C. under the conditions of a gap of 1 μm, a rotating plate diameter of 8 mm, a frequency of 0.1 Hz, a strain of 0.1%, and a heating rate of 10 ° C./min. The lowest viscosity obtained at that time was taken as the lowest dynamic viscosity. The results are shown in Table 1.
　（１２０℃における有機樹脂成分の粘度の測定）
　中空封止用樹脂シートのフィラー以外の有機組成物の均一混合物を作成し、これをレオメーター（HAAKEレオストレス６０００）を用い、せん断速度１（１／ｓ）にて粘度を測定した。結果を表１に示す。 (Measurement of viscosity of organic resin component at 120 ° C.)
A uniform mixture of an organic composition other than the filler of the hollow sealing resin sheet was prepared, and the viscosity was measured at a shear rate of 1 (1 / s) using a rheometer (HAAKE rheostress 6000). The results are shown in Table 1.
　（比Ａ／Ｂの測定）
　まず、ガラス基板（３０ｍｍ角、厚さ１ｍｍ）に複数のシリコンチップ（３ｍｍ角、厚さ２００μｍ）がフリップチップ接続されたテスト基板を準備した。チップは、バンプ（バンプ径１００μｍ、高さ２０μｍ）により基板にフリップチップ接続されている。チップ間の距離は、１００μｍであり、基板とチップとの間隙（中空ギャップ）は、２０μｍである。次に、テスト基板上に、実施例、比較例の中空封止用樹脂シートを配置した（図２Ｂ参照）。次に、中空封止用樹脂シート側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧した（図２Ｃ参照）。この際の樹脂の先端の進行方向の速度を測定した。これを進入速度Ａとした。より具体的には、加圧２秒毎にテスト基板を取り出し、ガラス基板側から樹脂（封止用樹脂シートを構成する材料）の進入先端部を、高さ計測機能付き光学顕微鏡で観察し、進入量（チップ上端部から樹脂進入先端までの距離）を測定した。ガラス基板に樹脂先端が到達するまでにおける平均速度を進入速度Ａとした。樹脂がガラス基板に到達した後（図２Ｄ参照）、そのまま加圧を続け、樹脂の先端の進行方向の速度を測定した。具体的には、樹脂の先端の間隙方向への速度を測定した。より具体的には、進入速度Ａと同様、加圧２秒毎にテスト基板を取り出して樹脂の先端の間隙方向への進入量を測定した。樹脂がガラス基板に到達した後、加圧２秒毎の測定を５回繰り返し、その平均速度を進入速度Ｂとした。ただし、樹脂先端がチップエッジから内部へ５０μｍ浸入した場合は、その時点で測定を終了し、樹脂がガラス基板に到達した後、内部へ５０μｍ浸入した時点までの平均速度を進入速度Ｂとした。その後、比Ａ／Ｂを算出した。結果を表１に示す。 (Measurement of ratio A / B)
First, a test substrate was prepared in which a plurality of silicon chips (3 mm square, thickness 200 μm) were flip-chip connected to a glass substrate (30 mm square, thickness 1 mm). The chip is flip-chip connected to the substrate by bumps (bump diameter 100 μm, height 20 μm). The distance between the chips is 100 μm, and the gap (hollow gap) between the substrate and the chip is 20 μm. Next, the resin sheet for hollow sealing of an Example and a comparative example was arrange | positioned on the test board | substrate (refer FIG. 2B). Next, pressure was applied from the hollow sealing resin sheet side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr (see FIG. 2C). At this time, the speed in the traveling direction of the tip of the resin was measured. This was defined as approach speed A. More specifically, the test substrate is taken out every 2 seconds under pressure, and the ingress tip of the resin (material constituting the sealing resin sheet) is observed from the glass substrate side with an optical microscope with a height measuring function, The amount of penetration (distance from the top end of the chip to the tip of the resin entry) was measured. The average speed until the resin tip reaches the glass substrate was defined as the approach speed A. After the resin reached the glass substrate (see FIG. 2D), pressurization was continued as it was, and the speed in the traveling direction of the tip of the resin was measured. Specifically, the velocity in the gap direction at the tip of the resin was measured. More specifically, like the approach speed A, the test substrate was taken out every 2 seconds of pressurization, and the amount of approach in the gap direction at the tip of the resin was measured. After the resin reached the glass substrate, the measurement every 2 seconds under pressure was repeated 5 times, and the average speed was defined as the entry speed B. However, when the resin tip penetrated 50 μm from the chip edge to the inside, the measurement was terminated at that time, and the average speed from the time when the resin reached the glass substrate to the time when the resin entered 50 μm was defined as the entry speed B. Thereafter, the ratio A / B was calculated. The results are shown in Table 1.
　（パッケージ中空部への樹脂進入性評価）
　アルミニウム櫛形電極が形成された以下の仕様のＳＡＷチップを下記ボンディング条件にてセラミック基板に実装したＳＡＷチップ実装基板を作製した。ＳＡＷチップとセラミック基板との間のギャップ幅は、２０μｍであった。 (Evaluation of resin penetration into package hollow)
A SAW chip mounting substrate in which a SAW chip having the following specifications on which aluminum comb-shaped electrodes were formed was mounted on a ceramic substrate under the following bonding conditions was produced. The gap width between the SAW chip and the ceramic substrate was 20 μm.
　＜ＳＡＷチップ＞
　チップサイズ：１．２ｍｍ角（厚さ１５０μｍ）
　バンプ材質：Ａｕ（高さ２０μｍ）
　バンプ数：６バンプ
　チップ数：１００個（１０個×１０個） <SAW chip>
Chip size: 1.2 mm square (thickness 150 μm)
Bump material: Au (height 20 μm)
Number of bumps: 6 bumps Number of chips: 100 (10 x 10)
　＜ボンディング条件＞
　装置：パナソニック電工（株）製
　ボンディング条件：２００℃、３Ｎ、１ｓｅｃ、超音波出力２Ｗ <Bonding conditions>
Equipment: manufactured by Panasonic Electric Works Co., Ltd. Bonding conditions: 200 ° C., 3N, 1 sec, ultrasonic output 2W
　得られたＳＡＷチップ実装基板上に、以下に示す加熱加圧条件下、各中空封止用樹脂シートを真空プレスにより貼付けた。 Each hollow sealing resin sheet was stuck on the obtained SAW chip mounting substrate by a vacuum press under the heating and pressurization conditions shown below.
　＜貼り付け条件＞
　温度：６０℃
　加圧力：４ＭＰａ
　真空度：１．６ｋＰａ
　プレス時間：１分 <Paste conditions>
Temperature: 60 ° C
Applied pressure: 4 MPa
Degree of vacuum: 1.6 kPa
Press time: 1 minute
　大気圧に開放した後、熱風乾燥機中、１５０℃、１時間の条件で中空封止用樹脂シートを熱硬化させ、封止体を得た。得られた封止体の基板、封止樹脂界面を劈開し、ＫＥＹＥＮＣＥ社製、商品名「デジタルマイクロスコープ」（２００倍）により、ＳＡＷチップとセラミック基板との間の中空部への樹脂の進入量を測定した。樹脂進入量は、ＳＡＷチップの端部から中空部へ進入した樹脂の最大到達距離を測定し、これを樹脂進入量とした。樹脂進入量が２０μｍ以下であった場合を「○」、２０μｍを超えていた場合を「×」として評価した。結果を表１に示す。 After releasing to atmospheric pressure, the resin sheet for hollow sealing was thermoset in a hot air dryer at 150 ° C. for 1 hour to obtain a sealed body. Cleavage the substrate and sealing resin interface of the obtained sealing body, and the entry of the resin into the hollow part between the SAW chip and the ceramic substrate by the product name “Digital Microscope” (200 times) manufactured by KEYENCE The amount was measured. The resin penetration amount was determined by measuring the maximum reach distance of the resin that entered the hollow portion from the end of the SAW chip, and setting this as the resin penetration amount. The case where the resin penetration amount was 20 μm or less was evaluated as “◯”, and the case where it exceeded 20 μm was evaluated as “×”. The results are shown in Table 1.
　（中空封止用樹脂シートの切断面のＳＥＭ観察）
　作製した実施例２に係る中空封止用樹脂シートを１５０℃で１時間熱硬化して室温まで徐冷した後、得られた硬化物をカッターにて切断した。切断面をビューラー製自動研磨装置にて研磨し、研磨後の切断面をＳＥＭ（２０００倍）により観察した。図５に、実施例２に係る中空封止用樹脂シートの切断面のＳＥＭ観察像を示す。図５におけるＳＥＭ観察像は、サンプルのうち、縦２７０μｍ×横２７０μｍ部分を拡大したものである。ＳＥＭ観察像において色の薄い部分（黒色ではない部分）が無機充填剤である。次いで、色の薄い部分の占有面積を画像処理ソフトＷｉｎＲＯＯＦ（三谷商事社製）を用い、モード法による２値化処理を行って求めた。その結果、７３．５％となった。 (SEM observation of cut surface of hollow sealing resin sheet)
The prepared resin sheet for hollow sealing according to Example 2 was thermally cured at 150 ° C. for 1 hour and gradually cooled to room temperature, and then the obtained cured product was cut with a cutter. The cut surface was polished by a Buhler automatic polishing apparatus, and the cut surface after polishing was observed with SEM (2000 times). In FIG. 5, the SEM observation image of the cut surface of the resin sheet for hollow sealing which concerns on Example 2 is shown. The SEM observation image in FIG. 5 is an enlarged view of a vertical 270 μm × horizontal 270 μm portion of the sample. In the SEM observation image, a light-colored portion (a portion that is not black) is an inorganic filler. Next, the occupied area of the light-colored portion was obtained by performing binarization processing by the mode method using image processing software WinROOF (manufactured by Mitani Corporation). As a result, it became 73.5%.
Figure JPOXMLDOC01-appb-T000001
  
 
Figure JPOXMLDOC01-appb-T000001
  
 
　　　　１１　　中空封止用樹脂シート
　　　　１１ａ　　支持体
　　　　１３　　ＳＡＷチップ
　　　　１５　　封止体
　　　　１８　　中空パッケージ
　　　　５０　　テスト基板 DESCRIPTION OF SYMBOLS 11 Resin sheet | seat for hollow sealing 11a Support body 13 SAW chip 15 Sealing body 18 Hollow package 50 Test board

Claims (4)

  1. 　被着体上に配置された１又は複数の電子デバイスを覆うように中空封止用樹脂シートを前記電子デバイス上に前記被着体と前記電子デバイスとの間の中空部を維持しながら積層する積層工程、及び、前記中空封止用樹脂シートを硬化させて封止体を形成する封止体形成工程を含む中空パッケージの製造方法に使用される中空封止用樹脂シートであって、
    　無機充填剤を６８体積％以上の含有量で含み、
    　レーザー回折散乱法により測定した前記無機充填剤の粒度分布において、前記中空部の幅を超えるものが１０体積％以上９０体積％以下であり、
    　基板に複数のチップがフリップチップ接続されたテスト基板であって、前記チップ間の距離が１００μｍであり、且つ、前記基板と前記チップとの間隙が２０μｍであるものを用い、
    　前記テスト基板上に、前記中空封止用樹脂シートを配置した後、前記中空封止用樹脂シート側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧した際の、前記中空封止用樹脂シートを構成する材料のチップ間への進入速度Ａと、前記中空封止用樹脂シートを構成する材料の前記間隙への進入速度Ｂとの比Ａ／Ｂが５以上であることを特徴とする中空封止用樹脂シート。     A resin sheet for hollow sealing is laminated on the electronic device while maintaining a hollow portion between the adherend and the electronic device so as to cover one or a plurality of electronic devices arranged on the adherend. A hollow sealing resin sheet used in a manufacturing method of a hollow package including a laminating step and a sealing body forming step of curing the hollow sealing resin sheet to form a sealing body,
    Containing an inorganic filler in a content of 68% by volume or more,
    In the particle size distribution of the inorganic filler measured by a laser diffraction scattering method, the volume exceeding the width of the hollow portion is 10% by volume to 90% by volume,
    A test substrate in which a plurality of chips are flip-chip connected to a substrate, the distance between the chips is 100 μm, and the gap between the substrate and the chip is 20 μm,
    After the resin sheet for hollow sealing is placed on the test substrate, the hollow sealing when pressurized from the hollow sealing resin sheet side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr. The ratio A / B between the entry speed A of the material constituting the fixing resin sheet between the chips and the entry speed B of the material constituting the hollow sealing resin sheet into the gap is 5 or more. A hollow sealing resin sheet.
  2. 　１２０℃における有機樹脂成分の粘度が１Ｐａ・ｓ以上であることを特徴とする請求項１に記載の中空封止用樹脂シート。 The resin sheet for hollow sealing according to claim 1, wherein the viscosity of the organic resin component at 120 ° C is 1 Pa · s or more.
  3. 　中空封止用樹脂シート全体の６０～１５０℃における硬化前の最低動的粘度が５万Ｐａ・ｓ以上１００万Ｐａ・ｓ以下であることを特徴とする請求項１又は２に記載の中空封止用樹脂シート。 3. The hollow seal according to claim 1, wherein the entire resin sheet for hollow sealing has a minimum dynamic viscosity before curing at 60 to 150 ° C. of 50,000 Pa · s to 1,000,000 Pa · s. Resin sheet for stopping.
  4. 　中空パッケージの製造方法であって、
    　被着体上に配置された１又は複数の電子デバイスを覆うように中空封止用樹脂シートを前記電子デバイス上に前記被着体と前記電子デバイスとの間の中空部を維持しながら積層する積層工程と、
    　前記中空封止用樹脂シートを硬化させて封止体を形成する封止体形成工程と
    　を含み、
    　前記中空封止用樹脂シートは、
    　無機充填剤を６８体積％以上の含有量で含み、
    　レーザー回折散乱法により測定した前記無機充填剤の粒度分布において、前記中空部の幅を超えるものが１０体積％以上９０体積％以下であり、
    　基板に複数のチップがフリップチップ接続されたテスト基板であって、前記チップ間の距離が１００μｍであり、且つ、前記基板と前記チップとの間隙が２０μｍであるものを用い、
    　前記テスト基板上に、前記中空封止用樹脂シートを配置した後、前記中空封止用樹脂シート側から７０℃、圧力１ｋｇｆ／ｃｍ２、真空度１０Ｔｏｒｒにて加圧した際の、前記中空封止用樹脂シートを構成する材料のチップ間への進入速度Ａと、前記中空封止用樹脂シートを構成する材料の前記間隙への進入速度Ｂとの比Ａ／Ｂが５以上である
    ことを特徴とする中空パッケージの製造方法。     A method for manufacturing a hollow package, comprising:
    A resin sheet for hollow sealing is laminated on the electronic device while maintaining a hollow portion between the adherend and the electronic device so as to cover one or a plurality of electronic devices arranged on the adherend. Lamination process;
    A sealing body forming step of curing the hollow sealing resin sheet to form a sealing body,
    The hollow sealing resin sheet is:
    Containing an inorganic filler in a content of 68% by volume or more,
    In the particle size distribution of the inorganic filler measured by a laser diffraction scattering method, the volume exceeding the width of the hollow portion is 10% by volume to 90% by volume,
    A test substrate in which a plurality of chips are flip-chip connected to a substrate, the distance between the chips is 100 μm, and the gap between the substrate and the chip is 20 μm,
    After the resin sheet for hollow sealing is placed on the test substrate, the hollow sealing when pressurized from the hollow sealing resin sheet side at 70 ° C., a pressure of 1 kgf / cm 2 , and a degree of vacuum of 10 Torr. The ratio A / B between the entry speed A of the material constituting the fixing resin sheet between the chips and the entry speed B of the material constituting the hollow sealing resin sheet into the gap is 5 or more. A method for producing a hollow package.
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