WO2015079600A1 - パワーモジュール、及びパワーモジュールの製造方法 - Google Patents
パワーモジュール、及びパワーモジュールの製造方法 Download PDFInfo
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- WO2015079600A1 WO2015079600A1 PCT/JP2014/004028 JP2014004028W WO2015079600A1 WO 2015079600 A1 WO2015079600 A1 WO 2015079600A1 JP 2014004028 W JP2014004028 W JP 2014004028W WO 2015079600 A1 WO2015079600 A1 WO 2015079600A1
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- WIPO (PCT)
- Prior art keywords
- power module
- main terminal
- semiconductor element
- power semiconductor
- bonding
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
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Definitions
- the present invention relates to a power module, and more particularly to a power module wiring structure and a package structure.
- a power module in which a power semiconductor element (for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Transistor), a bipolar transistor, a diode, etc.) is mounted on a circuit board and packaged by a sealing resin, for example, Used in motor drive devices.
- a power semiconductor element for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Transistor), a bipolar transistor, a diode, etc.
- the main structure of the power module package structure is the case structure.
- This case mold has a structure in which a power semiconductor element is mounted on a metal base plate for heat dissipation via an insulating substrate, and the case is bonded to the metal base plate for heat dissipation.
- a wire is used to connect the power semiconductor element and the main electrode.
- the wire an aluminum alloy wire having a wire diameter of 0.1 to 0.5 mm is generally used.
- the distance between adjacent wires must be set so that the head of the ultrasonic welding tool does not interfere with the already installed wire.
- the number of wires that can be installed is limited. There is a problem that it is difficult to increase the current.
- direct lead bonding has been proposed and put into practical use as a method that replaces wire bonding to solve this problem.
- direct lead bonding a plate-like main terminal (lead) and a power semiconductor element are joined by solder.
- direct lead bonding compared to wire bonding, it is possible to cope with a large current and to reduce wiring resistance and wiring inductance (for example, Patent Document 1).
- Japanese Patent Laid-Open No. 8-8395 page 5, FIG. 1
- Japanese Patent Laying-Open No. 2005-183495 page 4, FIGS. 1 and 4
- the present invention has been made in order to solve the above-described problems, and obtains a power module capable of improving reliability by ensuring stable joint strength.
- the semiconductor device includes a base material portion having an electrode portion formed on one surface thereof, a conductor portion disposed to face the base material portion, and the one surface of the electrode portion and the conductor portion. And a wiring portion joined to the surface facing the surface.
- the present invention provides a wiring portion joined to each of the opposing surfaces of the conductor portion and the base material portion, and absorbs the strain generated by the difference in linear expansion coefficient between the conductor portion and the base material portion as the wiring portion bends. With this structure, it is possible to relieve the stress generated in the joint portion, and a power module with improved joint reliability between the conductor portion and the base material portion can be obtained.
- FIG. 1 is a schematic sectional view of a power module according to Embodiment 1 of the present invention.
- a power module 100 includes a heat-dissipating metal base plate 1, an insulating substrate 2 as a first base material portion, a power semiconductor element 3 as a second base material portion, a surface electrode 4, and a main conductor portion. Terminals 5 and 10, an opening 6 as an opening, a bonding ribbon 7 as a wiring part, a case 8, and a sealing resin 11 are provided.
- the insulating substrate 2 is joined to the heat radiating metal base plate 1 by solder or the like (not shown).
- the insulating substrate 2 includes an insulating layer 21 and metal plates 22 and 23.
- the insulating substrate 2 has a structure in which metal plates 22 and 23 such as copper are bonded to both surfaces of an insulating layer 21 made of ceramic such as aluminum oxide, aluminum nitride or silicon nitride, or an epoxy resin.
- a wiring pattern is formed on the metal plate 23 on the front side.
- the power semiconductor element 3 is joined to the front metal plate 23 by solder or the like (not shown).
- a power semiconductor element such as a power control semiconductor element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor) or a free-wheeling diode is used.
- the power semiconductor element 3 is provided with a surface electrode 4 such as aluminum or copper.
- the surface electrode 4 and the main terminal 5 are electrically connected via a bonding ribbon 7 made of aluminum alloy or copper alloy.
- the bonding ribbon 7 is used, but a bonding wire may be used.
- the diameter of the bonding wire is better.
- the main terminal 5 is a copper plate electrode, and an opening 6 is formed at a location facing the power semiconductor element 3.
- the bonding ribbon 7 is formed in a loop shape across the opening 6 formed in the main terminal 5, and both ends thereof are ultrasonically welded to the main terminal 5 as one of ultrasonic bonding.
- the loop portion of the bonding ribbon 7 is ultrasonically welded to the surface electrode 4 of the power semiconductor element 3.
- the main terminal 5 is insert-molded or outsert in the case 8 and is used for input and output of current and voltage.
- another main terminal 10 that is insert-molded or outsert to the case 8 is joined to the metal plate 22 on the front side of the insulating substrate 2 by solder or the like.
- the case 8 is bonded to the heat radiating metal base plate 1 with an adhesive. Further, for the purpose of ensuring the insulation inside the module, an insulating sealing resin 11 such as silicone gel or epoxy resin is filled in a region surrounded by the case 8 and the heat radiating metal base plate 1.
- FIG. 2 is a schematic perspective view showing a method for manufacturing the electrode portion of the power module according to Embodiment 1 of the present invention.
- FIG. 3 is a schematic cross-sectional structure diagram illustrating a method for manufacturing the electrode portion of the power module according to Embodiment 1 of the present invention.
- FIGS. 2 and 3 are views particularly illustrating a bonding process between the main electrode 5 and the surface electrode 4 of the power semiconductor element 3 using the bonding ribbon 7.
- the power module according to Embodiment 1 of the present invention can be manufactured by the steps described below.
- the heat-dissipating metal base plate 1, the insulating substrate 2, the solder, and the power semiconductor element 3 are sequentially stacked and reflow soldered to solder the heat-dissipating metal base plate 1, the insulating substrate 2, and the power semiconductor element 3. .
- the case 8 is bonded to the heat radiating metal base plate 1 with an adhesive.
- the main terminal 5 to which the bonding ribbon 7 is ultrasonically welded is insert-molded in advance by the following process.
- the main terminal 5 has an opening 6 formed therein.
- the step of bonding the wiring portion to the conductor portion using ultrasonic bonding is performed so as to straddle the opening 6 of the main terminal 5 and ribbon bonding.
- the both ends of the bonding ribbon 7 are ultrasonically welded to the main terminal 5.
- a commercially available ribbon bonder may be used for forming the ribbon bonding.
- the wiring portion is joined to the main terminal 5 in which the bonding ribbon 7 is ultrasonically welded so as to straddle the opening 6 formed in the main terminal 5.
- the surface side where the bonding ribbon 7 of the main terminal 5 is ultrasonically welded is opposed to the surface electrode 4 of the power semiconductor element 3.
- the case 8 and the heat radiating metal base plate 1 are bonded, and the main terminal 10 and the insulating substrate 2 are soldered.
- a conductor part has an opening part and ultrasonic bonding is used for the electrode part formed in the base-material part using the bonding jig which passed the opening part.
- the head 91 of the ultrasonic welding tool 9 as a bonding jig is inserted inside the opening 6 and the loop portion of the bonding ribbon 7 and the surface electrode 4 of the power semiconductor element 3 are ultrasonically welded. .
- an insulating sealing resin 11 such as silicone gel or epoxy resin is injected and cured to seal the inside of the region surrounded by the case 8 and the heat radiating metal base plate 1.
- the insulating substrate 2, the power semiconductor element 3, the surface electrode 4, the main terminals 5 and 10, the opening 6, and the bonding ribbon 7 are resin-sealed.
- the power module according to the first embodiment can be manufactured.
- the bonding ribbon 7 can be ultrasonically welded directly to the surface electrode 4 of the power semiconductor element 3, stable bonding strength can be ensured.
- the size of the opening 6 formed in the main terminal 5 may be determined by the size and current capacity of the power semiconductor element 3 and the size of the ultrasonic welding tool 9.
- the size of the opening 6 is larger than the size of the head 91 of the ultrasonic welding tool 9, and it is necessary not to interfere with the head 91 during ultrasonic welding. Since the minimum area required for ultrasonic welding is determined by the current rating of the power semiconductor element 3, the size of the head 91 may be set to be equal to or larger than the minimum required area.
- the opening 6 may be formed by pressing or cutting. Although the shape of the opening 6 is rectangular in the drawing, it is not necessarily limited to the rectangle, and may be any shape that does not interfere with the head 91 of the ultrasonic welding tool 9. Furthermore, although ultrasonic welding is used as the bonding formation method, the bonding formation method is not limited to this method, and the bonding formation method can be appropriately selected according to the material used.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- Embodiment 2 FIG.
- the opening 6 of the main terminal 5 provided with the opening 6 used in the first embodiment is eliminated, and one end of the bonding ribbon 7 is placed on the surface side of the main terminal 5 facing the power semiconductor element 3.
- the other end of the bonding ribbon 7 is ultrasonically welded to the surface electrode 4 of the power semiconductor element 3.
- the quantity of the bonding ribbon 7 to be used can be reduced.
- FIG. 4 is a schematic cross-sectional view of the electrode portion of the power module according to the second embodiment of the present invention.
- the junction between the power semiconductor element 3 and the main terminal 5 includes the power semiconductor element 3, the surface electrode 4, the main terminal 5, and the bonding ribbon 7.
- the main terminal 5 has no opening 6 and is disposed so as to face the surface side on which the surface electrode 4 of the power semiconductor element 3 is formed.
- One end of the bonding ribbon 7 is ultrasonically welded to the side of the main terminal 5 facing the power semiconductor element 3.
- the other end of the bonding ribbon 7 is ultrasonically welded to the surface electrode 4 of the power semiconductor element 3.
- FIG. 5 is a schematic cross-sectional structure diagram illustrating a method for manufacturing an electrode portion of a power module according to Embodiment 2 of the present invention.
- one end of the bonding ribbon 7 is ultrasonically welded to the side of the main terminal 5 that faces the power semiconductor element 3.
- the other end (the other end) of the bonding ribbon 7 is arranged so as not to overlap the main terminal 5 when viewed from the back side of the surface of the main terminal 5 facing the power semiconductor element 3.
- FIG. 5A in the wiring portion joining step, one end of the bonding ribbon 7 is ultrasonically welded to the side of the main terminal 5 that faces the power semiconductor element 3.
- the other end (the other end) of the bonding ribbon 7 is arranged so as not to overlap the main terminal 5 when viewed from the back side of the surface of the main terminal 5 facing the power semiconductor element 3.
- the main terminal 5 with one end of the bonding ribbon 7 ultrasonically welded is placed so that the surface on which the bonding ribbon 7 is ultrasonically welded and the surface electrode 4 of the power semiconductor element 3 face each other.
- the ultrasonic welding tool 9 is used to bond the bonding ribbon 7.
- the other end not joined to the main terminal 5 is ultrasonically welded to the surface electrode 4 of the power semiconductor element 3.
- the bonding formation method is not limited to this method, and the bonding formation method can be appropriately selected according to the material to be used.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the material utilization efficiency is improved in manufacturing the main terminal 5. Furthermore, since the number of joints can be reduced, the manufacturing yield can be improved and the lead time can be reduced. In addition, since the degree of freedom of arrangement of the main terminal 5 and the power semiconductor element 3 increases, the design is facilitated particularly when the size of the surface electrode 4 of the power semiconductor element 3 is small.
- the length of the bonding ribbon 7 used for joining the main terminal 5 and the power semiconductor element 3 can be minimized, the electrical resistance in the bonding ribbon 7 is reduced, and the amount of heat generated in the bonding ribbon 7 when energized. Therefore, there is an effect that the reliability of bonding is improved. Furthermore, since the length of the bonding ribbon 7 can be minimized, the thermal conductance between the power semiconductor element 3 and the main terminal 5 is reduced, and the heat generated when the power semiconductor element 3 is energized causes the bonding ribbon 7 to be heated. Since it can efficiently escape to the main terminal 5 via the temperature rise of the power semiconductor element 3 can be suppressed, and the reliability of the junction can be improved. Further, as compared with the case of the first embodiment, the restriction on the size of the head 91 of the ultrasonic welding tool 9 is relaxed.
- Embodiment 3 FIG.
- an opening 6 is formed in the main terminal 10 at the joint portion where the main terminal 10 and the insulating substrate 2 used in the first embodiment are solder-bonded as in the case of the main terminal 5.
- the difference is that it is bonded to the insulating substrate 2 via the bonding ribbon 7.
- the joining of the main terminal 5 and the main terminal 10 can be formed in the same process, and the number of processes can be reduced.
- the reliability of bonding between the main terminal 10 and the insulating substrate 2 can be improved.
- FIG. 6 is a schematic sectional view of a power module according to Embodiment 3 of the present invention.
- the power module 200 includes a heat radiating metal base plate 1, an insulating substrate 2, a power semiconductor element 3, a surface electrode 4, main terminals 5 and 10, an opening 6, a bonding ribbon 7, a case 8, and a sealing resin 11.
- the main terminal 10 and the insulating substrate 2 are joined by solder.
- the opening 6 is formed in the main terminal 10 as in the case of the main terminal 5. It was formed and joined to the insulating substrate 2 via the bonding ribbon 7.
- An insulating substrate 2 is joined to the heat radiating metal base plate 1 by solder or the like (not shown).
- the insulating substrate 2 includes an insulating layer 21 and metal plates 22 and 23.
- the insulating substrate 2 has a structure in which metal plates 22 and 23 such as copper are bonded to both surfaces of an insulating layer 21 made of ceramic such as aluminum oxide, aluminum nitride or silicon nitride, or an epoxy resin.
- a wiring pattern is formed on the metal plate 23 on the front side.
- the power semiconductor element 3 is joined to the front metal plate 23 by solder or the like (not shown).
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- the opening 6 is provided also in the main terminal 10 and the opposing surfaces of the main terminal 10 and the insulating substrate 2 are bonded by the bonding ribbon 7, the bonding of the main terminal 5 and the main terminal 10 can be formed in the same process. And the number of processes can be reduced. In addition, the reliability of bonding between the main terminal 10 and the insulating substrate 2 can be improved.
- Embodiment 4 is different from the first embodiment in that a plurality of openings 6 of the main terminal 5 used in the first embodiment are formed and a plurality of joints are provided via the bonding ribbon 7.
- the current density of the power semiconductor element 3 can be increased.
- the current density flowing through each bonding ribbon 7 can be reduced, so that the reliability of bonding can be further improved.
- FIG. 7 is a schematic cross-sectional view of the electrode portion of the power module according to Embodiment 4 of the present invention.
- the junction between the power semiconductor element 3 and the main terminal 5 includes the power semiconductor element 3, the surface electrode 4, the main terminal 5, the opening 6, and the bonding ribbon 7.
- a plurality of joint portions are arranged side by side in the longitudinal direction of the main terminal 5.
- the joint portions are not limited to such an arrangement, and the joint portions are within the range where the surface electrode 4 of the power semiconductor element 3 exists. Or the orientation may be arbitrarily arranged.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- the current density of the power semiconductor element 3 can be increased by providing a plurality of openings 6 of the main terminal 5 and increasing the number of junctions with the surface electrode 4 of the power semiconductor element 3. Further, when the current density of the power semiconductor element 3 is the same, the current density flowing through each bonding ribbon 7 can be reduced, so that the reliability of bonding can be further improved.
- Embodiment 5 FIG.
- a plurality of openings 6 of the main terminal 5 used in the fourth embodiment are formed, and the junction with the main terminal 5 via the bonding ribbons 7 is stitch connection. Different. Thus, since the number of locations to be ultrasonically welded is reduced by using stitch connection, the lead time of the process can be shortened.
- FIG. 8 is a schematic cross-sectional view of the electrode portion of the power module according to the fifth embodiment of the present invention.
- the junction between the power semiconductor element 3 and the main terminal 5 includes the power semiconductor element 3, the surface electrode 4, the main terminal 5, the opening 6, and the bonding ribbon 7.
- the number of bonding points with the surface electrode 4 of the power semiconductor element 3 is two, but the number of bonding points with the surface electrode 4 of the power semiconductor element 3 may be two or more. Further, since the joining via the bonding ribbons 7 at a plurality of locations is stitch connection, the ultrasonic welding to the main terminals 5 is performed rather than the case where the bonding ribbons 7 are joined to the main terminals 5 across the individual openings 6. The number of joints can be reduced.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- connection between the main terminal 5 and the bonding ribbon 7 is stitched, the number of locations to be ultrasonically welded is reduced, so that the lead time of the process can be shortened.
- Embodiment 6 FIG.
- one or more openings 12 are formed in a surface facing the power semiconductor element 3 of the main terminal 5 used in the fourth embodiment and at a place where the bonding ribbon 7 is not formed. Different points. Thus, the injection property of the sealing resin 11 between the main terminal 5 and the power semiconductor element 3 can be improved, and the manufacturing yield can be improved.
- FIG. 9 is a schematic sectional view of the electrode portion of the power module according to the sixth embodiment of the present invention.
- the junction between the power semiconductor element 3 and the main terminal 5 includes the power semiconductor element 3, the surface electrode 4, the main terminal 5, the opening 6, the bonding ribbon 7, and the opening 12.
- One or more openings 12 are formed in the surface of the main terminal 5 facing the power semiconductor element 3 and at a location where the bonding ribbon 7 is not formed.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- the injection property of the sealing resin 11 between the main terminal 5 and the power semiconductor element 3 can be improved.
- the production yield can be improved.
- Embodiment 7 FIG.
- the main terminal 10 and the insulating substrate in the third embodiment are joined so that the main terminal 5 and the power semiconductor element 3 used in the fourth and fifth embodiments are joined in a plurality of places. Also in the joining between the two, the difference is that there are a plurality of joining locations. Thus, also in the joining between the main terminal 10 and the insulating substrate 2, the joining reliability can be improved.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- Embodiment 8 FIG.
- the eighth embodiment at the junction between the main terminal 5 and the power semiconductor element 3 used in the sixth embodiment, one or more openings 12 are formed at a location where the bonding ribbon 7 is not formed. Also in the bonding between the main terminal 10 and the insulating substrate 2 in the eighth embodiment, the difference is that one or more openings 12 are formed in a place where the bonding ribbon 7 is not formed.
- the injection property of the sealing resin 11 can be improved also in the bonding between the main terminal 10 and the insulating substrate 2.
- the power module since the opposing surfaces of the main terminal 5 and the power semiconductor element 3 are joined by the bonding ribbon 7, the power module is generated due to a difference in linear expansion coefficient between the main terminal 5 and the power semiconductor element 3.
- the strain to be absorbed can be absorbed by the bending of the bonding ribbon 7.
- the stress generated at the joint between the main terminal 5 and the power semiconductor element 3 is relieved, so that the peeling between the main terminal 5 and the power semiconductor element 3 is suppressed, and the main terminal 5 and the power semiconductor element 3 are It becomes possible to improve the reliability of joining.
- the main terminal 5 and the power semiconductor element 3 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- the injection property of the sealing resin 11 between the main terminal 10 and the insulating substrate 2 can be improved, and manufacturing Yield can be improved.
- Embodiment 9 FIG. In the ninth embodiment, the configuration in which the single power semiconductor element 3 bonded to the main terminal 5 used in the first embodiment is used as the configuration in which the main terminal 5 is bonded to a plurality of power semiconductor elements 3 is used. Different.
- FIG. 10 is a schematic sectional view of a power module according to the ninth embodiment of the present invention.
- the power module 300 includes a heat radiating metal base plate 1, an insulating substrate 2, power semiconductor elements 31 and 32, surface electrodes 4, main terminals 5 and 10, openings 6, a bonding ribbon 7, a case 8, and a sealing resin. 11 is provided.
- a configuration in which the two power semiconductor elements 31 and 32 are joined is illustrated.
- the insulating substrate 2 is joined to the heat radiating metal base plate 1 by solder or the like (not shown).
- the insulating substrate 2 includes an insulating layer 21 and metal plates 22 and 23.
- the insulating substrate 2 has a structure in which metal plates 22 and 23 such as copper are bonded to both surfaces of an insulating layer 21 made of ceramic such as aluminum oxide, aluminum nitride or silicon nitride, or an epoxy resin.
- a wiring pattern is formed on the metal plate 23 on the front side.
- Power semiconductor elements 31 and 32 are joined to the front metal plate 23 by solder or the like (not shown).
- the above circuit can be realized by joining a switching element 31 and a free wheel diode 32 as two power semiconductor elements to the main terminal 5.
- the linear expansion between the main terminal 5 and the power semiconductor elements 31 and 32 is achieved. Strain generated by the coefficient difference can be absorbed by the bending of the bonding ribbon 7. As a result, the stress generated at the joint between the main terminal 5 and the power semiconductor elements 31 and 32 is relieved, so that the peeling between the main terminal 5 and the power semiconductor elements 31 and 32 is suppressed, and the main terminal 5 and the power semiconductor are reduced. It becomes possible to improve the reliability of joining with the elements 31 and 32.
- the main terminal 5 and the power semiconductor elements 31 and 32 can be joined at the shortest distance possible, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- Embodiment 10 FIG.
- the tenth embodiment is different in that the case type power module used in the first to ninth embodiments is a transfer mold type power module. As described above, by using the transfer mold, batch molding is possible, the manufacturing cost is reduced, and the productivity can be improved.
- FIG. 11 is a schematic sectional view of a power module according to the tenth embodiment of the present invention.
- the power module 400 includes an insulating substrate 2, power semiconductor elements 31 and 32, a surface electrode 4, an opening 6, a bonding ribbon 7, a case 8, a sealing resin 11, and a lead frame 13.
- the main terminals 5 and 10 are replaced with a lead frame 13. Further, the injection process of the sealing resin 11 is replaced with batch molding with the transfer mold resin 14.
- the heat radiating metal base plate 1 is not provided. However, similarly to the case type, the heat radiating metal base plate 1 may be provided.
- the insulating substrate 2 includes an insulating layer 21 and metal plates 22 and 23.
- the insulating substrate 2 has a structure in which metal plates 22 and 23 such as copper are bonded to both surfaces of an insulating layer 21 made of ceramic such as aluminum oxide, aluminum nitride or silicon nitride, or an epoxy resin.
- a wiring pattern is formed on the metal plate 23 on the front side.
- Power semiconductor elements 31 and 32 are joined to the front metal plate 23 by solder or the like (not shown).
- the bonding ribbon 7 since the opposing surfaces of the lead frame 13 and the power semiconductor elements 31 and 32 are joined by the bonding ribbon 7, the linear expansion between the lead frame 13 and the power semiconductor elements 31 and 32 is performed. Strain generated by the coefficient difference can be absorbed by the bending of the bonding ribbon 7. As a result, the stress generated at the joint between the lead frame 13 and the power semiconductor elements 31 and 32 is relieved, so that the peeling between the lead frame 13 and the power semiconductor elements 31 and 32 is suppressed, and the lead frame 13 and the power semiconductor are reduced. It is possible to improve the reliability of bonding with the element 3.
- the lead frame 13 and the power semiconductor elements 31 and 32 can be joined at the shortest possible distance, and the electrical resistance in the bonding ribbon 7 when the power module is energized can be reduced. As a result, the amount of heat generated in the bonding ribbon 7 during energization is reduced, and the power module can be increased in current by suppressing the temperature rise of the power module.
- transfer molding since transfer molding is used, batch molding can be performed, manufacturing costs can be reduced, and productivity can be improved.
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Abstract
Description
図1は、この発明の実施の形態1のパワーモジュールの断面構造模式図である。図1において、パワーモジュール100は、放熱用金属ベース板1、第一の基材部である絶縁基板2、第二の基材部であるパワー半導体素子3、表面電極4、導体部である主端子5,10、開口部である開口6、配線部であるボンディングリボン7、ケース8、封止樹脂11を備える。
本実施の形態2においては、実施の形態1で用いた開口6を備えた主端子5の開口6をなくし、ボンディングリボン7の一端が主端子5のパワー半導体素子3と対向する面側に超音波溶接され、ボンディングリボン7の他端がパワー半導体素子3の表面電極4に超音波溶接された点が異なる。このようにボンディングリボン7の近傍を用いて接合したので、使用するボンディングリボン7の量を低減することができる。
本実施の形態3においては、実施の形態1で用いた主端子10と絶縁基板2とをハンダ接合とした接合部分を、主端子5の場合と同様に、主端子10に開口6を形成し、ボンディングリボン7を介して絶縁基板2と接合した点が異なる。このように、主端子5および主端子10の接合を同一工程で形成することができ、工程数を削減できる。また、主端子10と絶縁基板2との接合の信頼性を向上することができる。
本実施の形態4においては、実施の形態1で用いた主端子5の開口6を、複数個所形成し、ボンディングリボン7を介した接合箇所を複数とする構成とした点が異なる。このように接合箇所を増やすことで、パワー半導体素子3の電流密度を増加させることができる。また、パワー半導体素子3の電流密度が同じ場合では、各ボンディングリボン7に流れる電流密度を小さくすることができるため、接合の信頼性をさらに向上することが可能となる。
本実施の形態5においては、実施の形態4で用いた主端子5の開口6を複数個所形成し、主端子5との複数個所でのボンディングリボン7を介する接合を、ステッチ接続とした点が異なる。このように、ステッチ接続とすることで超音波溶接する箇所数が減少するため、工程のリードタイムを短縮することができる。
本実施の形態6においては、実施の形態4で用いた主端子5のパワー半導体素子3と対向する面内かつ、ボンディングリボン7を形成しない箇所にも1つ以上の開口12を形成する構成とした点が異なる。このように、主端子5とパワー半導体素子3との間への封止樹脂11の注入性を高めることができ、製造歩留まりを向上することができる。
本実施の形態7においては、実施の形態4および5で用いた主端子5とパワー半導体素子3との接合を、接合箇所を複数としたように、実施の形態3における主端子10と絶縁基板2との間の接合においても、接合箇所を複数とする構成とした点が異なる。このように、主端子10と絶縁基板2との間の接合においても、接合の信頼性を向上することができる。
本実施の形態8においては、実施の形態6で用いた主端子5とパワー半導体素子3との接合において、ボンディングリボン7を形成しない箇所にも1つ以上の開口12を形成する構成としたが、実施の形態8における主端子10と絶縁基板2との間の接合においても、ボンディングリボン7を形成しない箇所にも1つ以上の開口12を形成する構成とした点が異なる。このように、主端子10に開口12を設けることで、主端子10と絶縁基板2との間の接合においても、封止樹脂11の注入性を向上することができる。
本実施の形態9においては、実施の形態1で用いた主端子5と接合するパワー半導体素子3を1つとした構成を、主端子5を複数のパワー半導体素子3に接合する構成とした点が異なる。
本実施の形態10においては、実施の形態1~9で用いたケース型のパワーモジュールを、トランスファーモールド型のパワーモジュールとした点が異なる。このように、トランスファーモールド型としたことで、一括成形が可能となり製造コストが低減し、生産性を向上することが可能となる。
Claims (17)
- 一方の面に電極部が形成された基材部と、
前記基材部に対向させて配置された導体部と、
前記電極部と前記導体部の前記一方の面に対向する面とに接続された配線部と、
を備えたことを特徴とするパワーモジュール。 - 前記配線部は、前記配線部の一端が前記電極部と接合され、前記配線部の他端が前記導体部の前記一方の面と対向する面に接合されたことを特徴とする請求項1に記載のパワーモジュール。
- 前記導体部は、開口部を有し、前記開口部に対応する位置で前記配線部の他端が前記電極部に接合されたことを特徴とする請求項2に記載のパワーモジュール。
- 前記導体部は、開口部を有し、前記配線部は前記開口部を跨いで、両端が前記導体部と接合され、前記開口部に対応する位置で一部が前記電極部に接合されたことを特徴とする請求項1に記載のパワーモジュール。
- 前記開口部は、前記導体部に複数設けられたことを特徴とする請求項3または請求項4に記載のパワーモジュール。
- 前記導体部は、前記複数の開口部を跨いで前記配線部が形成されていることを特徴とする請求項5に記載のパワーモジュール。
- 前記導体部は、前記配線部が跨いで形成されていない前記開口部を有することを特徴とする請求項5に記載のパワーモジュール。
- 前記基材部は、第一の基材部と第二の基材部とを備えたことを特徴とする請求項1~請求項7のいずれか1項に記載のパワーモジュール。
- 複数の前記第二の基材部を有することを特徴とする請求項8に記載のパワーモジュール。
- 前記第一の基材部は、絶縁基板であることを特徴とする請求項8または請求項9に記載のパワーモジュール。
- 前記第二の基材部は、半導体素子であることを特徴とする請求項8~請求項10のいずれか1項に記載のパワーモジュール。
- 前記基材部、前記導電部、および前記帯状導電部がケースを用いて樹脂封止されたことを特徴とする請求項1~請求項11のいずれか1項に記載のパワーモジュール。
- 前記基材部、前記導電部、および前記帯状導電部がトランスファーモールド樹脂を用いて封止されたことを特徴とする請求項1~請求項11のいずれか1項に記載のパワーモジュール。
- 前記配線部は、ワイヤまたはリボンであることを特徴とする請求項1~請求項13のいずれか1項に記載のパワーモジュール。
- 配線部を導体部に超音波接合を用いて接合する工程と、前記配線部を接合した面側が下面となるように前記導体部を回転させる工程と、前記配線部を基材部に形成された電極部に超音波接合を用いて接合する工程と、
を備えたことを特徴とするパワーモジュールの製造方法。 - 前記導体部は開口部を有し、前記開口部を通したボンディング冶具を用いて前記配線部を前記基材部に形成された前記電極部に超音波接合を用いて接合する工程とを特徴とする請求項15に記載のパワーモジュールの製造方法。
- 前記配線部は、ワイヤまたはリボンであることを特徴とする請求項15または請求項16に記載のパワーモジュールの製造方法。
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DE112014005415.1T DE112014005415B4 (de) | 2013-11-26 | 2014-07-31 | Leistungsmodul und Verfahren zum Herstellen eines Leistungsmoduls |
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