WO2015057000A1 - Matériau thermoélectrique et son procédé de fabrication - Google Patents

Matériau thermoélectrique et son procédé de fabrication Download PDF

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Publication number
WO2015057000A1
WO2015057000A1 PCT/KR2014/009749 KR2014009749W WO2015057000A1 WO 2015057000 A1 WO2015057000 A1 WO 2015057000A1 KR 2014009749 W KR2014009749 W KR 2014009749W WO 2015057000 A1 WO2015057000 A1 WO 2015057000A1
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thermoelectric material
thermoelectric
present
formula
examples
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PCT/KR2014/009749
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English (en)
Korean (ko)
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고경문
김태훈
박철희
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주식회사 엘지화학
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Priority claimed from KR1020140131791A external-priority patent/KR101624310B1/ko
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to CN201480054978.4A priority Critical patent/CN105612625B/zh
Priority to JP2016524118A priority patent/JP6460351B2/ja
Priority to EP14854841.5A priority patent/EP3038175B1/fr
Priority to US14/914,617 priority patent/US10038132B2/en
Publication of WO2015057000A1 publication Critical patent/WO2015057000A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Definitions

  • the present invention relates to a thermoelectric conversion technology, and more particularly, to a thermoelectric conversion material having excellent thermoelectric conversion characteristics, a method of manufacturing the same, and a use thereof.
  • Compound A semiconductor is a compound which acts as a semiconductor by combining two or more elements rather than a single element such as silicon or germanium.
  • Various kinds of such compound semiconductors are currently developed and used in various fields.
  • a compound semiconductor may be used in a thermoelectric conversion element using a Peltier effect, a light emitting element such as a light emitting diode or a laser diode using the photoelectric conversion effect, and a solar cell.
  • thermoelectric conversion element may be applied to thermoelectric power generation, thermoelectric conversion cooling, or the like, and is generally configured in such a manner that an N-type thermoelectric semiconductor and a P-type thermoelectric semiconductor are electrically connected in series and thermally in parallel.
  • thermoelectric conversion power generation is a form of power generation that converts thermal energy into electrical energy by using thermoelectric power generated by providing a temperature difference to a thermoelectric conversion element.
  • thermoelectric conversion cooling is a form of cooling which converts electrical energy into thermal energy by taking advantage of the effect that a temperature difference occurs at both ends when a direct current flows through both ends of the thermoelectric conversion element.
  • thermoelectric conversion element The energy conversion efficiency of such a thermoelectric conversion element is largely dependent on ZT which is a figure of merit of a thermoelectric conversion material.
  • ZT may be determined according to Seebeck coefficient, electrical conductivity, thermal conductivity, and the like, and the higher the ZT value, the better the thermoelectric conversion material.
  • thermoelectric conversion materials Although many thermoelectric conversion materials have been proposed so far, there is no situation that sufficient thermoelectric conversion materials having high thermoelectric conversion performance are provided. In particular, in recent years, the field of application for thermoelectric conversion materials is gradually expanding, and the temperature conditions may vary depending on the application field. However, since thermoelectric conversion performance may vary depending on temperature, each thermoelectric conversion material needs to be optimized for thermoelectric conversion performance in a field in which the thermoelectric conversion material is applied. However, it is not yet seen that thermoelectric conversion materials with optimized performance over a wide and wide temperature range are well prepared.
  • an object of the present invention is to provide a thermoelectric material having excellent thermoelectric conversion performance in a wide temperature range, a method of manufacturing the same, and an apparatus using the same.
  • thermoelectric material represented by the following Chemical Formula 1 after repeated studies on the thermoelectric material, and confirmed that the novel thermoelectric conversion material may have excellent thermoelectric conversion performance.
  • the present invention was completed.
  • Q is at least one or more of S and Te, 2 ⁇ x ⁇ 2.6, 0 ⁇ y ⁇ 1.
  • x in Chemical Formula 1 may be x ⁇ 2.2.
  • x in Chemical Formula 1 may be x ⁇ 2.1.
  • x in Chemical Formula 1 may be 2.025 ⁇ x.
  • y in Formula 1 may be y ⁇ 0.1.
  • y in Formula 1 may be y ⁇ 0.05.
  • the method of manufacturing a thermoelectric material according to the present invention may further include a step of sintering the composite after the composite forming step.
  • the pressure sintering step may be performed by a hot press method or a discharge plasma sintering method.
  • thermoelectric conversion element according to the present invention for achieving the above object includes the thermoelectric material according to the present invention.
  • thermoelectric generator according to the present invention for achieving the above object includes the thermoelectric material according to the present invention.
  • thermoelectric material excellent in thermoelectric conversion performance can be provided.
  • thermoelectric material in the thermoelectric material according to an aspect of the present invention, a low thermal diffusivity, a low lattice thermal conductivity, a high Seebeck coefficient and a high ZT value may be ensured in a wide temperature range of 50 ° C to 500 ° C.
  • thermoelectric material according to the present invention can be used as another material in place of or in addition to the conventional thermoelectric material.
  • thermoelectric material according to the present invention can maintain a higher ZT value than the conventional thermoelectric material even at a temperature of 500 ° C. or lower, and even at a low temperature near 200 ° C. Therefore, when the thermoelectric material according to the present invention is used in a thermoelectric device for power generation or the like, stable thermoelectric conversion performance can be ensured even when a material is exposed to a relatively low temperature.
  • thermoelectric material according to the present invention may be used in solar cells, infrared windows (IR windows), infrared sensors, magnetic elements, memories, and the like.
  • FIG. 1 is a flowchart schematically showing a compound semiconductor manufacturing method according to an aspect of the present invention.
  • thermoelectric materials 2 is a graph showing an XRD analysis result for thermoelectric materials according to various embodiments of the present disclosure.
  • FIG. 3 is an enlarged graph of portion A of FIG. 2.
  • thermoelectric materials according to examples and comparative examples of the present invention are thermoelectric materials according to examples and comparative examples of the present invention.
  • thermoelectric material 5 is a graph illustrating a comparison of Seebeck coefficient measurement results according to temperatures of thermoelectric materials according to examples and comparative examples of the present disclosure.
  • thermoelectric materials according to examples and comparative examples of the present disclosure.
  • thermoelectric materials 7 is a graph illustrating a comparison of ZT value measurement results according to temperatures of thermoelectric materials according to examples and comparative examples of the present disclosure.
  • thermoelectric material according to an aspect of the present invention may be represented by the following Chemical Formula 1.
  • Q is at least one or more of S and Te, 2 ⁇ x ⁇ 2.6, 0 ⁇ y ⁇ 1.
  • thermoelectric material according to the present invention is configured in a form in which a part of Se is substituted with Cu and / or Se. That is, the thermoelectric material according to the present invention is composed of a form in which a part of Se site is deficient in Cu-Se based thermoelectric material and S and / or Te are substituted in such deficient site. And, due to such a constitutional feature, the thermoelectric material according to the present invention, the thermoelectric conversion performance can be improved compared to the conventional Cu-Se-based thermoelectric material.
  • thermoelectric material which concerns on this invention is Cu-Se type thermoelectric material containing Cu and Se, and x is larger than two.
  • Chemical Formula 1 it may be preferable to satisfy the condition of x ⁇ 2.2.
  • x ⁇ 2.2 may be.
  • thermoelectric material according to the present invention may satisfy the condition of x ⁇ 2.15.
  • Formula 1 may be configured to satisfy the condition of x ⁇ 2.1.
  • Chemical Formula 1 may satisfy a condition of 2.01 ⁇ x.
  • x may be 2.01 ⁇ x.
  • x may satisfy a condition of 2.025 ⁇ x. Under such conditions, the thermoelectric conversion performance of the thermoelectric material according to the present invention may be further improved.
  • x may be configured to satisfy a condition of 2.04 ⁇ x.
  • x may satisfy a condition of 2.05 ⁇ x.
  • x may be 2.075 ⁇ x.
  • y ⁇ 0.1 may be.
  • y ⁇ 0.075 in Chemical Formula 1, y ⁇ 0.05.
  • thermoelectric material represented by the formula (1) may include a part of the secondary phase, the amount may vary depending on the heat treatment conditions.
  • thermoelectric material according to the present invention when the content of Se is 1 with respect to the Cu-Se-based thermoelectric material, the content of Cu exceeds 2, and a part of Se is replaced with S and / or Te It can be formed as. Therefore, the thermoelectric material according to the present invention, due to such a constitutional feature, compared with the conventional Cu-Se-based thermoelectric material, the Seebeck coefficient is increased, the thermal diffusivity is reduced, ZT value is increased, the thermoelectric conversion performance can be improved. have.
  • thermoelectric material 1 is a flowchart schematically showing a method of manufacturing a thermoelectric material according to an aspect of the present invention.
  • the method of manufacturing a thermoelectric material according to the present disclosure may include a mixture forming step S110 and a compound forming step S120.
  • the mixture forming step (S110) to correspond to the formula (1), it is possible to form a mixture by mixing S and / or Te in addition to Cu and Se as a raw material.
  • each raw material may be mixed in powder form.
  • the mixing between each raw material is made better, the reactivity between each raw material can be improved, the compound synthesis can be made well in step S120.
  • the mixing of each raw material may be performed in the manner of hand milling (ball milling), ball milling (planetary ball mill), etc. using mortar (mortar)
  • the present invention is not limited by this specific mixing method.
  • the compound forming step (S120) is a step of forming a compound according to Chemical Formula 1 by heat-treating the mixture formed in the step S110, that is, Cu x Se 1-y Q y (Q is at least one of S and Te, 2 ⁇ x ⁇ 2.6, 0 ⁇ y ⁇ 1) A step of synthesizing the compound.
  • the mixture produced in step S110 may be put into a furnace and heated at a predetermined temperature for a predetermined time to allow the compound of Formula 1 to be synthesized.
  • step S120 may be performed by a solid phase reaction method.
  • the raw material that is, the mixture used in the synthesis, does not change into a completely liquid state in the synthesis process, and the reaction may occur in the solid state.
  • the step S120 may be performed for 1 hour to 24 hours in the temperature range of 200 °C to 650 °C. Since this temperature range is lower than the melting point of Cu, Cu x Se 1-y Q y may be synthesized when Cu is not melted when heated in this temperature range. For example, the step S120 may be performed for 15 hours under a temperature condition of 450 ° C.
  • a mixture of Cu, Se and S and / or Te is put into a cemented carbide mold to form a pellet for the synthesis of Cu x Se 1-y Q y , and the mixture of pellets is fused. It can be enclosed in a fused silica tube and vacuum sealed. The vacuum-sealed first mixture may be charged into a furnace and heat treated.
  • thermoelectric material manufacturing method according to the present invention after the compound forming step (S120), may further comprise a step (S130) of pressure sintering the compound.
  • step S130 may be performed by a hot press (Hot Press) method or a discharge plasma sintering (Spark Plasma Sintering) method.
  • Hot Press Hot Press
  • spark Plasma Sintering spark Plasma Sintering
  • thermoelectric material according to the present invention when sintered by the pressure sintering method, it is easy to obtain a high sintered density and an effect of improving thermoelectric performance.
  • the pressure sintering step may be performed under a pressure condition of 30MPa to 200MPa.
  • the pressure sintering step may be performed under a temperature condition of 300 °C to 800 °C.
  • the pressure sintering step may be performed for 1 minute to 12 hours under the pressure and temperature conditions.
  • the step S130 may be performed while flowing a gas, such as Ar, He, N 2 , which contains a part of hydrogen or does not contain hydrogen in a vacuum state.
  • a gas such as Ar, He, N 2 , which contains a part of hydrogen or does not contain hydrogen in a vacuum state.
  • the step S130 may be performed by pulverizing the composite formed in the step S120 into a powder form, followed by pressure sintering. In this case, while improving convenience in the sintering and measuring process, the sintered density can be further increased.
  • thermoelectric conversion element according to the present invention may include the above-mentioned thermoelectric material.
  • thermoelectric material according to the present invention can effectively improve the ZT value in a wide temperature range compared to conventional thermoelectric materials, especially Cu-Se-based thermoelectric materials. Therefore, the thermoelectric material according to the present invention can be usefully used in thermoelectric conversion elements in place of or in addition to conventional thermoelectric conversion materials.
  • thermoelectric material according to the present invention can be used in a thermoelectric power generation device that performs thermoelectric power generation using a waste heat source or the like. That is, the thermoelectric generator according to the present invention includes the thermoelectric material according to the present invention described above. In the case of the thermoelectric material according to the present invention, since it shows a high ZT value in a wide temperature range, such as a temperature range of 50 ° C. to 500 ° C., the thermoelectric material may be more usefully applied to thermoelectric power generation.
  • thermoelectric material according to the present invention may be manufactured in the form of a bulk type thermoelectric material.
  • Cu, Se and S in powder form were weighed to conform to the chemical formula of Cu 2.025 Se 0.99 S 0.01 , and then mixed in alumina mortar.
  • the mixed material was placed in a cemented carbide mold to make pellets and placed in a fused silica tube and vacuum sealed. Then, the mixture was heated in a box furnace for 1 hour and then heated for 15 hours at 500 ° C., and then slowly cooled to room temperature to obtain a Cu 2.025 Se 0.99 S 0.01 compound.
  • Example 2 Cu, Se and S in powder form were weighed to conform to the chemical formula of Cu 2.025 Se 0.95 S 0.05 , and then mixed and synthesized in the same manner as in Example 1 to obtain a Cu 2.025 Se 0.95 S 0.05 composite. Then, a sample of Example 2 was obtained through a sintering process in the same manner as in Example 1 above.
  • Example 3 Cu, Se and S in powder form were weighed to conform to the chemical formula of Cu 2.05 Se 0.99 S 0.01 , and then mixed and synthesized in the same manner as in Example 1 to obtain a Cu 2.05 Se 0.99 S 0.01 composite. Then, a sample of Example 3 was obtained through a sintering process in the same manner as in Example 1.
  • Example 4 Cu, Se and S in powder form were weighed to conform to the chemical formula of Cu 2.05 Se 0.95 S 0.05 , and then mixed and synthesized in the same manner as in Example 1 to obtain a Cu 2.05 Se 0.95 S 0.05 composite. Then, a sample of Example 4 was obtained through a sintering process in the same manner as in Example 1.
  • Example 5 Cu, Se and S in powder form were weighed to conform to the chemical formula of Cu 2.1 Se 0.99 S 0.01 , and then mixed and synthesized in the same manner as in Example 1 to obtain a Cu 2.1 Se 0.99 S 0.01 composite. Then, a sample of Example 5 was obtained through a sintering process in the same manner as in Example 1.
  • Example 6 Cu, Se, and S in powder form were weighed according to the chemical formula of Cu 2.1 Se 0.95 S 0.05 , and then mixed and synthesized in the same manner as in Example 1 to obtain a Cu 2.1 Se 0.95 S 0.05 composite. Then, a sample of Example 6 was obtained through a sintering process in the same manner as in Example 1.
  • Example 1 Cu and Se in powder form were weighed to conform to the chemical formula of Cu 2 Se, and then mixed and synthesized in the same manner as in Example 1 to obtain a Cu 2 Se composite. Then, a comparative example sample was obtained through a sintering process in the same manner as in Example 1.
  • thermoelectric materials of Examples 1 to 6 the XRD pattern was analyzed and shown in FIG. 2.
  • portion A of FIG. 2 is enlarged and illustrated in FIG. 3, and in FIG. 3, a Cu peak appearing when Cu is present in a single composition is indicated by B.
  • FIG. 1 For the thermoelectric materials of Examples 1 to 6, the XRD pattern was analyzed and shown in FIG. 2.
  • the portion A of FIG. 2 is enlarged and illustrated in FIG. 3, and in FIG. 3, a Cu peak appearing when Cu is present in a single composition is indicated by B.
  • the samples of Examples 1 to 6 all are formed from the material of the Cu x Se in the form of a portion S is substituted Cu x Se 1-y S y on Se sites, Cu 2 S It can be seen that it is not formed in the form of.
  • thermo diffusivity was measured at predetermined temperature intervals using LFA457 (Netzsch), and the results are shown as Examples 1 to 6 and Comparative Examples 4. Shown in
  • the electrical conductivity and the Seebeck coefficient of the samples were measured at predetermined temperature intervals using ZEM-3 (Ulvac-Riko, Inc), among which The Seebeck coefficient S measurement results are shown in FIG. 5 as Examples 1 to 6 and Comparative Examples.
  • the lattice thermal conductivity ( ⁇ L ) and ZT values of the samples of Examples 1 to 6 and Comparative Examples were calculated and the results are shown in FIGS. 6 and 7, respectively.
  • the lattice thermal conductivity was obtained using the Wiedenmann-Franz Law, and the Lorentz constant used at that time was 1.86 * 10 -8 .
  • the lattice thermal conductivity may be calculated using the following equation.
  • ⁇ L lattice thermal conductivity
  • ⁇ total thermal conductivity
  • ⁇ e thermal conductivity by electrical conductivity
  • T temperature (K).
  • thermoelectric materials of Examples 1 to 6 represented by Cu x Se 1-y S y (2 ⁇ x ⁇ 2.6, 0 ⁇ y ⁇ 1) are compared with the thermoelectric materials of the comparative example. It can be seen that thermal diffusivity is remarkably low over the entire temperature measurement interval of 100 ° C to 500 ° C.
  • thermoelectric material of the comparative example has a thermal diffusivity of more than 0.4 mm 2 / s, while all of the thermoelectric materials of the examples do not exceed 0.4 mm 2 / s.
  • thermoelectric material of the comparative example shows the thermal diffusivity more than twice compared with the thermoelectric materials of Examples 1-6.
  • thermoelectric materials of Examples 2 to 6 have a thermal diffusivity of 0.2 mm 2 / s or less in the temperature range of 100 ° C. to 500 ° C., and thermal diffusion at a level of about one third to one quarter compared to the comparative example. It can be seen that the degree is greatly reduced.
  • thermoelectric materials of Examples 1 to 6 according to the present invention over the entire temperature measurement section of 50 ° C. to 500 ° C., compared to the thermoelectric material of the comparative example. It can be seen that high.
  • thermoelectric material of the comparative example has only a Seebeck coefficient of 120 kW / K or less in the temperature range of 500 ° C, whereas the thermoelectric materials of Examples 1 to 6 all have a Seebeck coefficient of 175 kW / K or more at a temperature of 500 ° C. Is showing.
  • the Seebeck coefficient is at least 220 Pa / K at a temperature of 500 ° C.
  • the Seebeck coefficient is at least 260 Pa / K.
  • the lattice thermal conductivity is greater than 0.4 W / mK in the temperature range of 200 ° C. to 500 ° C., whereas in the thermoelectric material of Examples 1 to 6, the same The lattice thermal conductivity is less than 0.4 W / mK over the temperature range.
  • thermoelectric material of the comparative example at a temperature of 200 °C shows a lattice thermal conductivity of approximately 0.65 W / mK
  • thermoelectric material of Examples 1 to 6 shows a lattice thermal conductivity of 0.4 W / mK, a large difference It is shown.
  • thermoelectric material of Example 2 has a lattice thermal conductivity of about 0.25 W / mK at a temperature of 200 ° C., which has a very low lattice thermal conductivity compared to the comparative example.
  • thermoelectric material of the example exhibits a ZT value improvement effect of about 2 to 3 times in the temperature range of 200 ° C. to 500 ° C. as compared to the thermoelectric material of the comparative example. Can be.
  • the ZT value of the comparative example is only about 0.15, while the ZT values of Examples 1 to 6 show values of 0.35 or more, and in particular, the ZT values of Examples 2 to 6 are 0.5 or more. The value is shown. Moreover, in Examples 2 and 3, the ZT value is approximately 0.6, which is about 4 times that of the comparative example.
  • the ZT value of the comparative example is about 0.25 or less, whereas the ZT values of Examples 1 to 6 show a larger value than 0.5, and particularly, in Examples 2 to 6, the ZT value is 0.7 or more. It is shown. Moreover, in Examples 2 and 3, the ZT value has a value larger than 0.8, which shows a great difference from the comparative example.
  • the ZT value of the comparative example was about 0.35 or less, while the ZT values of Examples 1 to 6 showed values of 0.8 or more and more than 1.0, showing a difference of two or more times. Moreover, in the case of Example 2, the ZT value showed a value close to 1.1, which shows a big difference from the comparative example.
  • the ZT value of the comparative example is about 0.5, while the ZT values of Examples 1 to 6 show values of 0.9 or more, more than 1.0. In particular, in the case of Example 2, ZT value has shown the value of 1.25 or more.
  • thermoelectric material according to each embodiment of the present invention compared with the thermoelectric material of the comparative example, the thermal diffusivity is significantly lowered and the Seebeck coefficient is increased over the entire temperature range of 100 °C to 500 °C, ZT value It can be seen that the back is significantly improved. Therefore, it can be said that the thermoelectric material according to the present invention is excellent in thermoelectric conversion performance.

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  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
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Abstract

L'invention concerne un matériau thermoélectrique qui présente une excellente performance thermoélectrique. Le matériau thermoélectrique selon la présente invention peut être représenté par la formule chimique 1 suivante. <Formule chimique 1> CuxSe1-yQy. Dans la formule chimique 1, Q est le soufre (S) et/ou le tellure (Te) et 2 < x ≤ 2,6, 0 < y < 1.
PCT/KR2014/009749 2013-10-17 2014-10-16 Matériau thermoélectrique et son procédé de fabrication WO2015057000A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201480054978.4A CN105612625B (zh) 2013-10-17 2014-10-16 热电材料及其制造方法
JP2016524118A JP6460351B2 (ja) 2013-10-17 2014-10-16 熱電材料及びその製造方法
EP14854841.5A EP3038175B1 (fr) 2013-10-17 2014-10-16 Matériaux thermoélectriques et ses procédé de fabrication
US14/914,617 US10038132B2 (en) 2013-10-17 2014-10-16 Thermoelectric materials and their manufacturing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2013-0124024 2013-10-17
KR20130124024 2013-10-17
KR1020140131791A KR101624310B1 (ko) 2013-10-17 2014-09-30 열전 재료 및 그 제조 방법
KR10-2014-0131791 2014-09-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115010495A (zh) * 2022-05-31 2022-09-06 河南工程学院 一种快速合成铜硒基块体热电材料的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030057512A1 (en) * 2001-08-31 2003-03-27 Hans-Josef Sterzel Thermoelectrically active materials and generators and peltier arrangements containing them
EP1930960A1 (fr) * 2006-12-04 2008-06-11 Aarhus Universitet Utilisation de matériaux thermoélectriques à basse température
US20100051080A1 (en) * 2008-07-18 2010-03-04 Samsung Electronics Co., Ltd. Thermoelectric materials and chalcogenide compounds
US20100307556A1 (en) * 2007-10-18 2010-12-09 Lg Chem, Ltd Process for preparation of compound containing 6a group element using reductant
US20130009115A1 (en) * 2011-05-13 2013-01-10 Lg Chem, Ltd. Compound semiconductors and their application

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030057512A1 (en) * 2001-08-31 2003-03-27 Hans-Josef Sterzel Thermoelectrically active materials and generators and peltier arrangements containing them
EP1930960A1 (fr) * 2006-12-04 2008-06-11 Aarhus Universitet Utilisation de matériaux thermoélectriques à basse température
US20100307556A1 (en) * 2007-10-18 2010-12-09 Lg Chem, Ltd Process for preparation of compound containing 6a group element using reductant
US20100051080A1 (en) * 2008-07-18 2010-03-04 Samsung Electronics Co., Ltd. Thermoelectric materials and chalcogenide compounds
US20130009115A1 (en) * 2011-05-13 2013-01-10 Lg Chem, Ltd. Compound semiconductors and their application

Non-Patent Citations (1)

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Title
See also references of EP3038175A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115010495A (zh) * 2022-05-31 2022-09-06 河南工程学院 一种快速合成铜硒基块体热电材料的方法

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