WO2015053605A1 - A method for eliminating aluminium surface defects - Google Patents
A method for eliminating aluminium surface defects Download PDFInfo
- Publication number
- WO2015053605A1 WO2015053605A1 PCT/MY2014/000139 MY2014000139W WO2015053605A1 WO 2015053605 A1 WO2015053605 A1 WO 2015053605A1 MY 2014000139 W MY2014000139 W MY 2014000139W WO 2015053605 A1 WO2015053605 A1 WO 2015053605A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- drying
- cold
- rinsing
- nitrogen
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000004411 aluminium Substances 0.000 title claims abstract description 10
- 230000007547 defect Effects 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000001035 drying Methods 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000126 substance Substances 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
Definitions
- the present invention relates to method for eliminating aluminum surface defects after etching.
- the present invention relates to
- amethod for eliminating aluminium surface defects on large exposed aluminium alloy metal comprising: conducting a post pad etching treatment (100) on the metal; cold- rinsing the metal (200); and drying the metal (300) using nitrogen;characterized in that the steps of conducting a post pad etching treatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent.
- the step of conducting a post pad etching treatment (100) further comprising: spraying the metal batch by batch with de-ionized water with resistivity of at least 10 Megaohm (100a), wherein the de-ionized water flow rate is in range of 7000-11000 cc/ m in maximum of 5 minutes and with minimum motor speed of 60 rpm in one direction spin rotation.
- the step of cold-rinsing the metal (200) further comprising: cold-rinsing with minimum time of 7 minutes and minimum motor speed of 60 rpm in one direction spin rotation (200a).
- the step of drying the metal (300) using nitrogen further comprising: nitrogen spin drying with minimum time of 12 minutes and minimum motor speed 500 rpm in one direction spin rotation (300a).
- Figure l illustrates a flowchart of a method foreliminating aluminium surface defects on large exposed aluminium alloy metal of the present invention.
- the present invention relates to a method for eliminating aluminium surface defects on large exposedaluminium alloymetal comprising: conducting a post pad etching treatment (100) on the metal; cold-rinsing the metal (200); and drying the metal (300) using nitrogen ;characterized in that the steps of conducting a post pad etchingtreatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent.
- step of conducting a post pad etching treatment (100) further comprising:
- the step of cold-rinsing the metal (200) further comprising: cold-rinsing with minimum time of 7 minutes and minimum motor speed of 60 rpm in one direction spin rotation (200a).
- the step of drying the metal (300) using nitrogen further comprising: nitrogen spin drying with minimum time of 12 minutes and minimum motor speed 500 rpm in one direction spin rotation (300a).
- Pad etching process is part of the final fabrication stage in IC wafer fabrication. The purpose is to remove the passivation layer for bond pad opening.
- the passivation layer usually consists of a sandwiched layer of CVD silicon nitride and silicon oxide films. Underlying the passivation layer is a metal stack layer (Aluminum) with titanium nitride (TiN) film on the top surface as the anti-reflective coating (ARC).
- the process requirement for pad etching is complete removal of the nitride and oxide layer and also to etch through the TiN layer.
- Pad etching process exposes the underlying metal for subsequent wire bonding process for external interconnect.
- Discrete power MOSFET devices often require an extra large bond pad size of more than 1500 mm x 1500 mm for high current applications.
- the pad etching process sequence adopted is as follows: 1. Passivation layer etching, 2. Sidewall polymer removal by solvent cleaning, 3. Photoresistashing for photoresist removal, 4. Titanium nitride etching, and 5. Post titanium nitride cleaning
- a clean, titanium-nitride-free surface is required to ensure good adhesion of the bonding material to the bond pad surface in the subsequent wire bonding process.
- Cleaning after the pad etching process is an essential step to ensure removal of any polymer and contaminant residues on the aluminum surface of the bond pad area.
- the surface roughness observed on the aluminum grain is most probably caused by the interaction between the residues left after the titanium nitride etching step and the solvent cleaning materials.
- Standard cleaning process using a fluorine based solvent had caused white haze effect on the wafer surface.
- the present invention which does not utilize chemical as the cleaning agent is developed to prevent the unwanted interactions that lead to the occurrence of white haze.
- a new recipe using FSI Zeta surface conditioning system is developed to prevent the occurrence of white haze defect.
- This system is a batch spray processing ( 100) where the process chemical can be dispensed via centre and side spray nozzle from a fresh or re-circulated chemical, depending on chemical and dispense time step on recipe setting.
- the rotating speed turntable is programmable within the process recipe to rotate forward or reverse direction.
- Dl-water and nitrogen are used for the rinsing step (200) to remove chemical residue on the wafer surface, process chamber and the chemical line.
- the higher spin speed rotation with nitrogen purge is performed for final drying step (300).
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a method for eliminating aluminium surface defectson large exposed metalcomprising: conducting a post pad etching treatment (100) on the metal; cold-rinsing the metal (200); and drying the metal (300) using nitrogen;characterized in that the steps of conducting a post pad etching treatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent. The present invention is advantageous as it is effective in eliminating the white haze effect. The advantage of use of de-ionized (DI) water only cleaning method is that it is more environment-friendly.
Description
Description
Title of Invention: A METHOD FOR ELIMINATING
ALUMINIUM SURFACE DEFECTS
[ 1 ] FIELD OF INVENTION
[2] The present invention relates to method for eliminating aluminum surface defects after etching.
[3] BACKGROUND OF THE INVENTION
[4] Normal post pad etch cleaning method over very large pad area had created white haze defect that is visible by naked eye. Results from experimental test runs showed strong association between the aluminum surface roughness and the solvent cleaning post titanium nitride etching step. The most likely cause of the roughness was interaction between the post titanium-nitride-etch aluminum surface and the fluorine (aqueous)-based chemical formulation from the solvent, for exampleUS 200201 1 1033 where it providesapost metal etch cleaning method which begins by providing a wafer with an etched metal layer formed thereon, wherein the etched metal layer is covered with a polymer residue. A fluorine based organic acid solvent is used to clean the metal layer, followed by removing the solvent by a physical method. Next, a de-ionized water is applied to flush the metal layer before performing a drying step on the wafer to dry the metal layer.
[5] Therefore it is a need for an invention which does not require chemical as an intermediate treatment that is capable ofeliminating resist and polymer residues after the pad etching process step.
[6] SUMMARY OF THE INVENTION
[7] According to an aspect of the present invention, the present invention relates to
amethod for eliminating aluminium surface defects on large exposed aluminium alloy metal comprising: conducting a post pad etching treatment (100) on the metal; cold- rinsing the metal (200); and drying the metal (300) using nitrogen;characterized in that the steps of conducting a post pad etching treatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent. The step of conducting a post pad etching treatment (100) further comprising: spraying the metal batch by batch with de-ionized water with resistivity of at least 10 Megaohm (100a), wherein the de-ionized water flow rate is in range of 7000-11000 cc/ m in maximum of 5 minutes and with minimum motor speed of 60 rpm in one direction spin rotation. The step of cold-rinsing the metal (200) further comprising: cold-rinsing with minimum time of 7 minutes and minimum motor speed of 60 rpm in one direction spin rotation (200a). The step of drying the metal (300) using nitrogen
further comprising: nitrogen spin drying with minimum time of 12 minutes and minimum motor speed 500 rpm in one direction spin rotation (300a).
[8] The above provision is advantageous as it is effective in eliminating the white haze effect. The advantage of use of de-ionized (DI) water only cleaning method is that it is more environment-friendly.
[9] BRIEF DESCRIPTION OF THE DRAWINGS
[10] Figure lillustrates a flowchart of a method foreliminating aluminium surface defects on large exposed aluminium alloy metal of the present invention.
[1 1 ] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[12] As illustrated in Figure 1, generally, the present invention relates to a method for eliminating aluminium surface defects on large exposedaluminium alloymetal comprising: conducting a post pad etching treatment (100) on the metal; cold-rinsing the metal (200); and drying the metal (300) using nitrogen ;characterized in that the steps of conducting a post pad etchingtreatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent.
[13] The step of conducting a post pad etching treatment (100) further comprising:
spraying the metal batch by batch with de-ionized water with resistivity of at least 10 Megaohm (100a), wherein the de-ionized water flow rate is in range of 7000-1 1000 cc/ m in maximum of 5 minutes and with minimum motor speed of 60 rpm in one direction spin rotation. The step of cold-rinsing the metal (200) further comprising: cold-rinsing with minimum time of 7 minutes and minimum motor speed of 60 rpm in one direction spin rotation (200a). The step of drying the metal (300) using nitrogen further comprising: nitrogen spin drying with minimum time of 12 minutes and minimum motor speed 500 rpm in one direction spin rotation (300a).
[14] Pad etching process is part of the final fabrication stage in IC wafer fabrication. The purpose is to remove the passivation layer for bond pad opening. The passivation layer usually consists of a sandwiched layer of CVD silicon nitride and silicon oxide films. Underlying the passivation layer is a metal stack layer (Aluminum) with titanium nitride (TiN) film on the top surface as the anti-reflective coating (ARC). The process requirement for pad etching is complete removal of the nitride and oxide layer and also to etch through the TiN layer. Pad etching process exposes the underlying metal for subsequent wire bonding process for external interconnect. Discrete power MOSFET devices often require an extra large bond pad size of more than 1500 mm x 1500 mm for high current applications.
[15] The pad etching process sequence adopted is as follows: 1. Passivation layer etching, 2. Sidewall polymer removal by solvent cleaning, 3. Photoresistashing for photoresist removal, 4. Titanium nitride etching, and 5. Post titanium nitride cleaning
[16] A clean, titanium-nitride-free surface is required to ensure good adhesion of the
bonding material to the bond pad surface in the subsequent wire bonding process. Cleaning after the pad etching process is an essential step to ensure removal of any polymer and contaminant residues on the aluminum surface of the bond pad area. The surface roughness observed on the aluminum grain is most probably caused by the interaction between the residues left after the titanium nitride etching step and the solvent cleaning materials. Standard cleaning process using a fluorine based solvent had caused white haze effect on the wafer surface. The present invention which does not utilize chemical as the cleaning agent is developed to prevent the unwanted interactions that lead to the occurrence of white haze.
[17] A new recipe using FSI Zeta surface conditioning system is developed to prevent the occurrence of white haze defect. This system is a batch spray processing ( 100) where the process chemical can be dispensed via centre and side spray nozzle from a fresh or re-circulated chemical, depending on chemical and dispense time step on recipe setting. In addition, the rotating speed turntable is programmable within the process recipe to rotate forward or reverse direction. Then, Dl-water and nitrogen are used for the rinsing step (200) to remove chemical residue on the wafer surface, process chamber and the chemical line. The higher spin speed rotation with nitrogen purge is performed for final drying step (300).
[18] Although the invention has been described with reference to particular embodiment, it is to be understood that the embodiment is merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiment that other arrangements may be devised without departing from the scope of the present invention as defined by the appended claims.
Claims
[Claim 1] A method for eliminating aluminium surface defects on large exposed aluminium alloy metal comprising:
conducting a post pad etching treatment (100) on the metal;
cold-rinsing the metal (200); and
drying the metal (300) using nitrogen
characterized in that
the steps of conducting a post pad etching treatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent.
[Claim 2] A method for eliminating aluminium surface defects as claimed in
Claim 1 , wherein the step of conducting a post pad etching treatment (100) further comprising:
spraying the metal batch by batch with de-ionized water with resistivity of at least 10 Megaohm (100a), wherein the de-ionized water flow rate is in range of 7000-11000 cc/m in maximum of 5 minutes and with minimum motor speed of 60 rpm in one direction spin rotation.
[Claim 3] A method for eliminating aluminium surface defects as claimed in
Claim 1 , wherein the step of cold-rinsing the metal (200) further comprising:
cold-rinsingwith minimum time of 7 minutes and minimum motor speed of 60 rpm in one direction spin rotation (200a).
[Claim 4] A method for eliminating aluminium surface defects as claimed in
Claim 1, wherein the step of drying the metal (300) using nitrogen further comprising:
nitrogenspin drying with minimum time of 12 minutes and minimum motor speed 500 rpm in one direction spin rotation (300a).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI2013003677A MY161431A (en) | 2013-10-07 | 2013-10-07 | A method for eliminating aluminium surface defects |
| MYPI2013003677 | 2013-10-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015053605A1 true WO2015053605A1 (en) | 2015-04-16 |
Family
ID=51589482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/MY2014/000139 WO2015053605A1 (en) | 2013-10-07 | 2014-05-30 | A method for eliminating aluminium surface defects |
Country Status (2)
| Country | Link |
|---|---|
| MY (1) | MY161431A (en) |
| WO (1) | WO2015053605A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6248178B1 (en) * | 2000-03-30 | 2001-06-19 | United Microelectronics Corp. | Method for removing pad nodules |
| US20020111033A1 (en) * | 2001-02-15 | 2002-08-15 | United Microelectronice Corp. | Post metal etch cleaning method |
| US20090181542A1 (en) * | 2008-01-10 | 2009-07-16 | Winbond Electronics Corp. | Method of forming bonding pad opening |
| CN103077880A (en) * | 2012-07-25 | 2013-05-01 | 上海华力微电子有限公司 | Process method for processing titanium nitride residues on aluminum welding pad |
| WO2014112864A1 (en) * | 2013-01-18 | 2014-07-24 | Mimos Berhad | Method of fabricating a bond pad in a semiconductor device |
-
2013
- 2013-10-07 MY MYPI2013003677A patent/MY161431A/en unknown
-
2014
- 2014-05-30 WO PCT/MY2014/000139 patent/WO2015053605A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6248178B1 (en) * | 2000-03-30 | 2001-06-19 | United Microelectronics Corp. | Method for removing pad nodules |
| US20020111033A1 (en) * | 2001-02-15 | 2002-08-15 | United Microelectronice Corp. | Post metal etch cleaning method |
| US20090181542A1 (en) * | 2008-01-10 | 2009-07-16 | Winbond Electronics Corp. | Method of forming bonding pad opening |
| CN103077880A (en) * | 2012-07-25 | 2013-05-01 | 上海华力微电子有限公司 | Process method for processing titanium nitride residues on aluminum welding pad |
| WO2014112864A1 (en) * | 2013-01-18 | 2014-07-24 | Mimos Berhad | Method of fabricating a bond pad in a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| MY161431A (en) | 2017-04-14 |
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