WO2015050353A1 - Procédé pour la fabrication de paillettes de graphène pour matière d'électrode de condensateur à double couche électrique, paillettes de graphène fabriquées par ce dernier et condensateur à double couche électrique les comprenant en tant que matière d'électrode - Google Patents

Procédé pour la fabrication de paillettes de graphène pour matière d'électrode de condensateur à double couche électrique, paillettes de graphène fabriquées par ce dernier et condensateur à double couche électrique les comprenant en tant que matière d'électrode Download PDF

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WO2015050353A1
WO2015050353A1 PCT/KR2014/009155 KR2014009155W WO2015050353A1 WO 2015050353 A1 WO2015050353 A1 WO 2015050353A1 KR 2014009155 W KR2014009155 W KR 2014009155W WO 2015050353 A1 WO2015050353 A1 WO 2015050353A1
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Prior art keywords
graphene
electric double
layer capacitor
electrode material
doping source
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PCT/KR2014/009155
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English (en)
Korean (ko)
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박영민
권순근
윤동명
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코닝정밀소재 주식회사
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Publication of WO2015050353A1 publication Critical patent/WO2015050353A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/19—Preparation by exfoliation
    • C01B32/192—Preparation by exfoliation starting from graphitic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Definitions

  • the present invention relates to a method for producing graphene flakes for electrode materials of an electric double layer capacitor, to graphene flakes prepared by the present invention, and to an electric double layer capacitor including the same as an electrode material.
  • Method of manufacturing graphene flakes for the electrode material of the electric double layer capacitor which can improve the electrochemical properties of the graphene flakes by doping (P) and nitrogen (N) at the same time, the graphene flakes produced thereby and the electrode material It relates to an electric double layer capacitor comprising.
  • an electrode active material a key material that determines the capacity performance of the device is an electrode active material.
  • the electrode active material a high specific surface area carbon-based material is utilized.
  • activated carbon having a high specific surface area of 1500 to 2000 m 2 / g is commonly used.
  • graphene is a material attracting attention in various fields due to its excellent electrical and mechanical properties. Such graphene has been spotlighted as an electrode for ultracapacitors due to its large specific surface area and excellent electrical properties.
  • the electrode for ultracapacitors including graphene as an electrode material is manufactured through various methods. Among them, electrode production using graphene oxide which is easy to produce at low cost in solution process has been actively studied.
  • graphene As such, as graphene is used as an electrode material for ultracapacitors, the production of graphene having excellent electrical properties is required.
  • the present invention has been made to solve the problems of the prior art as described above, an object of the present invention by doping phosphorus (P) or phosphorus (P) and nitrogen (N) simultaneously in the graphene flakes, graphene flakes
  • the present invention provides a method for producing graphene flakes for an electrode material of an electric double layer capacitor capable of improving electrochemical properties of the graphene flakes and an electric double layer capacitor including the same.
  • the solution preparation step of preparing a solution in which graphene oxide or graphene is added A doping source addition step of adding a phosphorus (P) doping source to the solution; Microwave processing to microwave the solution to which the doping source is added; And it provides a graphene flake manufacturing method for the electrode material of the electric double layer capacitor comprising a thermal reduction treatment step of thermally reducing the microwave-treated solution.
  • phosphonic acid-based powder may be used as the phosphorous (P) doping source.
  • phenylphosphonic acid may be used as the phosphorus (P) doping source.
  • a nitrogen (N) doping source may be further added to the solution.
  • the nitrogen (N) doping source may be used any one of ammonia, hydrazine and pyrrole (pyrrole).
  • the solution preparation step may further comprise the step of preparing the graphene oxide.
  • the manufacturing of the graphene oxide may include a first process of acid-processing graphite to form graphite oxide, and a second process of layer-separating the graphene oxide from the graphite oxide.
  • the present invention provides a graphene flake characterized in that the phosphorus (P) or phosphorus (P) and nitrogen (N) is covalently bonded.
  • the present invention provides an electric double layer capacitor comprising the graphene flake as an electrode material.
  • the present invention by simultaneously doping phosphorus (P) or phosphorus (P) and nitrogen (N) in the graphene flake through a series of microwave reaction and thermal reduction, thereby improving the electrochemical properties of the graphene flake Accordingly, when the prepared graphene flake is applied to the electrode material of the electric double layer capacitor, the capacity characteristic of the electric double layer capacitor can be improved.
  • FIG. 1 is a process flow chart illustrating a method for producing graphene flakes for electrode materials of an electric double layer capacitor according to an embodiment of the present invention.
  • a 2 is a phenylphosphonic acid (a) and nitrogen (N) used as a phosphorus (P) doping source in the doping source addition step of the method for producing graphene flakes for the electrode material of the electric double layer capacitor according to an embodiment of the present invention.
  • N nitrogen
  • P phosphorus
  • 3 and 4 are XPS analysis results of the graphene flakes prepared by the graphene flake manufacturing method for the electrode material of the electric double layer capacitor according to an embodiment of the present invention.
  • Graphene flake manufacturing method is a method for manufacturing a graphene flake (graphene flake) used as the electrode material of the electric double layer capacitor (electric double layer capacitor).
  • the electric double layer capacitor is an energy storage device using a pair of charge layers (electric double layers) having different signs, and has a better output characteristic than a general battery, resulting in short charge / discharge time, excellent durability and stability, and thus a semi-permanent lifetime.
  • Such an electric double layer capacitor is generally composed of a cell formed by placing two electrodes of a positive electrode and a negative electrode facing each other with a separator therebetween and then impregnating the electrolyte.
  • the graphene flake manufacturing method is a method for manufacturing the graphene flake used as the electrode material of at least one of the two electrodes of the electric double layer capacitor.
  • the graphene flake manufacturing method includes a solution preparation step S1, a doping source addition step S2, a microwave treatment step S3, and a thermal reduction treatment step S4.
  • the solution preparation step (S1) is a step of preparing a solution in which graphene oxide or graphene is added.
  • the step of preparing the graphene oxide or the production of graphene is preceded.
  • a method for producing graphene oxide first, a graphite (Hummer's method) of the graphite (Hummer's method), the surface of the hydroxyl group (hydroxyl group, epoxide group and carboxylic group (carboxylic group) To make graphite oxide. Then, graphene oxide is obtained through layer separation from the produced graphite oxide.
  • the layer separation process may be performed by adding graphite oxide to a predetermined concentration in distilled water as a solvent and then performing liquid sonication.
  • the graphene may be separated from a carbon material such as graphite.
  • a graphene oxide solution or a graphene solution is prepared by dipping the graphene oxide or graphene thus prepared, for example, in methanol.
  • the doping source addition step (S2) is a step of adding a phosphorus (P) doping source to the graphene oxide solution or graphene solution, in order to dope the phosphorus (P) in the graphene flakes.
  • phosphonic acid-based powder may be used as the phosphorus (P) doping source.
  • phenylphosphonic acid which is well dissolved in an aqueous solution, as shown in (a) of FIG. 2, may be added to the graphene oxide solution or the graphene solution. . And by adding phenylphosphonic acid in this way, the effect of maintaining the dispersibility of a solution can also be acquired.
  • a nitrogen (N) doping source in order to dope nitrogen (N) together with phosphorus (P) in the graphene flakes, a nitrogen (N) doping source may be further added to the graphene oxide solution or the graphene solution.
  • a nitrogen (N) doping source may be used ammonia, hydrazine (hydrazine) or as shown in Figure 2 (b), pyrrole (pyrrole).
  • pyridinic Nitrogen (N) is doped in pyridinic and pyrrolic forms.
  • the microwave treatment step (S3) is a microwave (graphene oxide solution or graphene solution to which a phosphorus (P) doping source or a phosphorus (P) doping source and nitrogen (N) doping source is added at the same time as the microwave ( microwave) processing.
  • the microwave treatment step (S3) the graphene oxide solution or the graphene solution to which the doping source is added is subjected to microwave treatment at high temperature (eg, 180 degrees) and under high pressure. Through this, in the microwave processing step (S3) to induce thermal decomposition of the doping source and doping in the graphene flakes.
  • the thermal reduction treatment step (S4) is a step of thermally reducing the microwave-treated solution.
  • the thermal reduction step (S4) by thermally reducing at a temperature of 800 degrees or more, the graphene is reduced, and the carbonization of the doping source is induced, whereby phosphorus (P) or phosphorus (P) and Nitrogen (N) is doped.
  • FIG. 4 shows that the phosphorus (P) is well doped inside the graphene flakes as a result of XPS element analysis when the phosphorus (P) doping source is doped.
  • the thermal reduction treatment step S4 when the thermal reduction treatment step S4 is completed, phosphorus (P) or phosphorus (P) and nitrogen (N) are doped to produce graphene flakes covalently bonded with graphene.
  • the graphene flakes doped with phosphorus (P) unlike the graphene without defects or doping dopants, excess charge may be introduced. Accordingly, when the graphene flakes prepared by the graphene flake manufacturing method according to an embodiment of the present invention is applied as an electrode material of the electric double layer capacitor, the distance between the ions in the electrolyte is shortened and the adsorption energy with the ions is large.
  • the graphene flakes prepared by the graphene flake manufacturing method according to an embodiment of the present invention has a high charge density due to the simultaneous doping of phosphorus (P) or phosphorus (P) and nitrogen (N), excellent electrical conductivity Will have Accordingly, the characteristics of the electric double layer capacitor including the graphene flake manufactured by the graphene flake manufacturing method according to the embodiment of the present invention as an electrode material can be further improved.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

La présente invention porte sur : un procédé pour la fabrication de paillettes de graphène pour une matière d'électrode d'un condensateur à double couche électrique, qui permet d'améliorer les caractéristiques électrochimiques de paillettes de graphène par dopage de phosphore (P) ou à la fois de phosphore et d'azote (N) dans les paillettes de graphène ; des paillettes de graphène fabriquées par le procédé ; et un condensateur à double couche électrique comprenant les paillettes de graphène en tant que matière d'électrode. À cette fin, la présente invention porte un procédé pour la fabrication de paillettes de graphène pour une matière d'électrode d'un condensateur à double couche électrique, sur des paillettes de graphène fabriquées par ce dernier et sur un condensateur à double couche électrique les comprenant en tant que matière d'électrode, le procédé comprenant : une étape de préparation de solution consistant à préparer une solution à laquelle un oxyde de graphène ou du graphène a été ajouté ; une étape d'ajout de source de dopage consistant à ajouter une source de dopage en phosphore (P) à la solution ; une étape de traitement par des micro-ondes consistant à effectuer un traitement par des micro-ondes sur la solution à laquelle la source de dopage a été ajoutée ; et une étape de traitement de réduction thermique consistant à effectuer un traitement de réduction thermique sur la solution sur laquelle le traitement par des micro-ondes a été effectué.
PCT/KR2014/009155 2013-10-01 2014-09-30 Procédé pour la fabrication de paillettes de graphène pour matière d'électrode de condensateur à double couche électrique, paillettes de graphène fabriquées par ce dernier et condensateur à double couche électrique les comprenant en tant que matière d'électrode WO2015050353A1 (fr)

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KR20130117298A KR20150038915A (ko) 2013-10-01 2013-10-01 전기 이중층 캐패시터의 전극 소재용 그래핀 플레이크 제조방법, 이에 의해 제조된 그래핀 플레이크 및 이를 전극 소재로 포함하는 전기 이중층 캐패시터
KR10-2013-0117298 2013-10-01

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106276866A (zh) * 2015-06-12 2017-01-04 中国石油化工股份有限公司 磷掺杂石墨烯的生产方法
CN106276864A (zh) * 2015-06-12 2017-01-04 中国石油化工股份有限公司 磷掺杂石墨烯的合成方法
CN106276865A (zh) * 2015-06-12 2017-01-04 中国石油化工股份有限公司 生产磷掺杂石墨烯的方法
CN112420991A (zh) * 2020-08-21 2021-02-26 华南农业大学 新型碳材料的掺杂方法及其应用
US11098098B2 (en) 2013-12-29 2021-08-24 Curelab Oncology, Inc. Methods and compositions relating to p62/SQSTM1 for the treatment and prevention of inflammation-associated diseases

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101629835B1 (ko) * 2015-11-11 2016-06-14 한국지질자원연구원 다성분 도핑을 통한 3차원 그래핀 복합체의 제조방법 및 이를 이용한 슈퍼커패시터
CN107331530A (zh) * 2017-06-26 2017-11-07 中国科学技术大学 一种低温掺杂石墨烯及其制备方法和超级电容器
CN108772079B (zh) * 2018-04-26 2021-03-02 昆明理工大学 一种纳米黑磷/石墨烯复合材料的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130022565A (ko) * 2011-08-25 2013-03-07 한국과학기술원 질소 도핑된 그라핀, 이를 포함하는 울트라캐패시터 및 이의 제조방법
KR20130027199A (ko) * 2011-09-07 2013-03-15 성균관대학교산학협력단 Ｎ―도핑된 그래핀을 이용한 전계효과 트랜지스터 및 그의 제조 방법
US20130099197A1 (en) * 2010-02-02 2013-04-25 Seacrete Llc Doped graphene electronic materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130099197A1 (en) * 2010-02-02 2013-04-25 Seacrete Llc Doped graphene electronic materials
KR20130022565A (ko) * 2011-08-25 2013-03-07 한국과학기술원 질소 도핑된 그라핀, 이를 포함하는 울트라캐패시터 및 이의 제조방법
KR20130027199A (ko) * 2011-09-07 2013-03-15 성균관대학교산학협력단 Ｎ―도핑된 그래핀을 이용한 전계효과 트랜지스터 및 그의 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG CAN ET AL.: "Synthesis of Nitrogen Doped Graphene through Microwave Irradiation", J. INORG. MATER., vol. 27, February 2012 (2012-02-01), pages 146 - 150 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11098098B2 (en) 2013-12-29 2021-08-24 Curelab Oncology, Inc. Methods and compositions relating to p62/SQSTM1 for the treatment and prevention of inflammation-associated diseases
CN106276866A (zh) * 2015-06-12 2017-01-04 中国石油化工股份有限公司 磷掺杂石墨烯的生产方法
CN106276864A (zh) * 2015-06-12 2017-01-04 中国石油化工股份有限公司 磷掺杂石墨烯的合成方法
CN106276865A (zh) * 2015-06-12 2017-01-04 中国石油化工股份有限公司 生产磷掺杂石墨烯的方法
CN112420991A (zh) * 2020-08-21 2021-02-26 华南农业大学 新型碳材料的掺杂方法及其应用

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