WO2015003600A1 - 一种mwt太阳能电池 - Google Patents

一种mwt太阳能电池 Download PDF

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Publication number
WO2015003600A1
WO2015003600A1 PCT/CN2014/081779 CN2014081779W WO2015003600A1 WO 2015003600 A1 WO2015003600 A1 WO 2015003600A1 CN 2014081779 W CN2014081779 W CN 2014081779W WO 2015003600 A1 WO2015003600 A1 WO 2015003600A1
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WIPO (PCT)
Prior art keywords
solar cell
dot matrix
backlight
gate line
solar energy
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PCT/CN2014/081779
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English (en)
French (fr)
Inventor
路忠林
李质磊
盛雯婷
张凤鸣
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南京日托光伏科技有限公司
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Publication of WO2015003600A1 publication Critical patent/WO2015003600A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the utility model relates to a battery, in particular to a ⁇ solar battery.
  • the conventional solar cell positive and negative electrodes are respectively located on the light receiving surface and the backlight surface of the battery sheet.
  • the electrode located on the front side of the battery block blocks the light receiving surface, reduces the light receiving area, and affects the photoelectric conversion efficiency of the solar cell.
  • a metal perforated silicon solar cell is a solar cell that solves the problem that the light-receiving surface of a conventional solar cell is blocked by the main gate line.
  • the MWT solar cell leads the electrode located on the front side of the solar cell to the backlight of the solar cell through the via electrode, thereby eliminating the occlusion of the light receiving surface by the main gate line.
  • the object of the present invention is to solve the problem that the solar cell printed by the prior art has few conductive vias, the gate line is far from the hole, and the power loss is large. .
  • the technical scheme adopted by the utility model is: a Li ⁇ solar cell, comprising a solar cell film, the solar cell chip is provided with a lattice hole of k X k , wherein k 5 and k are integers, and the dot matrix hole runs vertically
  • the current collected by the grating line reaches the k X k electrode contact point of the backlight through the lattice hole
  • the lattice hole is a columnar or tapered structure
  • the backlight surface of the solar cell is arranged in a 4 ⁇ 4 dot matrix arrangement.
  • the back electrode, the back electrode and the aluminum back field of the solar cell backlight surface are connected.
  • the light-receiving surface of the solar cell sheet is provided with a 5 x 5 dot matrix hole.
  • the light-receiving surface of the solar cell sheet is provided with a 6 x 6 dot matrix hole.
  • the pitch of the dot matrix is 30. 8 let.
  • the back electrode spacing is 33. 5mm.
  • the utility model adopts a hole array with a lattice arrangement of k X k, k ⁇ 5, k as an integer, and the distance between each silver grid line and the hole is closer, collecting The current is smaller,
  • the gate line can be designed to be finer, and the total area of the gate line is reduced, resulting in a smaller blackout area of the gate line, lower consumption of silver paste, and higher battery conversion efficiency.
  • FIG. 1 is a schematic structural view of a light receiving surface according to Embodiment 1 of the present invention.
  • Embodiment 2 is a schematic structural view of a backlight surface according to Embodiment 1 of the present invention.
  • a Li T solar cell includes a solar cell sheet 1 , and the solar cell sheet 1 is provided with a 5 X 5 dot matrix hole 2 , and the dot matrix hole 2 vertically penetrates the solar cell sheet 1 .
  • the dot matrix holes 2 are respectively connected to the front electrode of the light receiving surface 3 and the electrode contact point 5 of the backlight surface, and the current collected by the gate line 4 of the light receiving surface 3 passes through the dot matrix hole 2 to reach the 5 X 5 electrode contact point of the backlight surface (not shown).
  • the dot matrix hole 2 is a columnar or tapered structure
  • the back surface electrode 6 of the 4 x 4 dot array is arranged on the backlight surface of the solar cell, and the back electrode 6 is connected to the back electrode contact point through the conductive via hole, and the conductive via hole vertically penetrates the solar energy
  • the cell sheet 1, the back electrode 6 and the aluminum back field 7 of the backlight surface of the solar cell are connected.
  • the dot pitch of the dot matrix is 30. 8 mm. 5 ⁇
  • the back electrode spacing is 33. 5mm.
  • 5 ⁇ 5 dot matrix holes 2 vertically penetrating the solar cell sheet 1 may be first formed on the solar cell sheet 1, and conductive via holes may be formed on the solar cell sheet 1 by laser drilling, and then passed through the screen.
  • the printing process fills the conductive via hole with a conductive medium paste, and solidifies to form the dot matrix hole 2, and the conductive via hole has a columnar or tapered structure.
  • each silver gate line is closer to the hole, the collected current is smaller, the gate line can be designed to be finer, and the total area of the gate line is reduced, resulting in the grid line.
  • the shading area is smaller, the consumption of silver paste is lower, and the battery conversion efficiency is higher.
  • a Li T solar cell comprising a solar cell chip, the solar cell chip is provided with a 6 ⁇ 6 dot matrix hole, and the current collected by the light surface grating line passes through the lattice hole to reach the 6 ⁇ 6 electrode contact point of the backlight surface, and the dot matrix hole
  • the backlight surface of the solar cell is provided with a rear surface electrode arranged in a 4 ⁇ 4 dot matrix, and the back electrode is connected to the aluminum back field of the backlight surface of the solar cell.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

一种MWT太阳能电池，包括太阳能电池片（1），太阳能电池片（1）设有k×k的点阵孔洞（2），其中k≥5，k为整数，点阵孔洞（2）垂直贯穿太阳能电池片（1），受光面（3）的栅线（4）汇集的电流通过点阵孔洞（2）到达背光面的k×k电极接触点（5），点阵孔洞（2）为柱状或锥状结构，太阳能电池片（1）背光面设有4×4点阵排列的背面电极（6），背面电极（6）和太阳能电池背光面的铝背场（7）相连接。采用这种设计方式，受光面栅线遮光面积更小，银浆耗量更低，光电转化效率更高。

Description

一种 MWT太阳能电池 技术领域
本实用新型涉及一种电池， 特别是一种丽 τ太阳能电池。
背景技术
随着能源价格的上涨， 开发利用新能源成为当今能源领域研究的主要课题。 由于太阳能具有无污染、无地域性限制、 取之不竭等优点， 研究太阳能发电成为 开发利用新能源的主要方向。利用太阳能电池发电是当今人们使用太阳能的一种 主要方式。传统的太阳能电池正负极是分别位于电池片的受光面和背光面。而位 于电池片正面的电极会对受光面造成遮挡，减小了受光面积，影响太阳能电池的 光电转换效率。
金属穿孔硅太阳能电池， 简称 MWT太阳能电池， 是为解决传统太阳能电池 受光面被主栅线遮挡问题的一种太阳能电池。 MWT太阳能电池通过过孔电极将 位于太阳能电池正面的电极引至太阳能电池的背光面，从而消除了主栅线对受光 面的遮挡。现有的 MWT太阳能电池虽然减小栅线遮光面积， 在一定程度上提高 了光电转换效率， 但是导电通孔的数量较少， 使得细栅线距离孔洞过远， 每根细 栅线收集的电流很大， 导致了在细栅线上过多的功率损耗； 一种解决方案是加大 栅线的宽度和高度，但这样又导致了细栅线遮光面积和银浆耗量都随之增大的问 题。
实用新型内容
发明目的：本实用新型的目的在于解决现有技术印刷的太阳能电池导电通孔 少， 栅线距离孔洞远， 功率损耗大的问题。。
技术方案： 本实用新型采用的技术方案为： 一种丽 τ太阳能电池， 包括太阳 能电池片， 太阳能电池片设有 k X k的点阵孔洞， 其中 k 5且 k为整数， 点阵孔 洞垂直贯穿太阳能电池片， 受光面栅线汇集的电流通过点阵孔洞到达背光面的 k X k 电极接触点， 点阵孔洞为柱状或锥状结构， 太阳能电池片背光面设有 4 X 4 点阵排列的背面电极， 背面电极和太阳能电池背光面的铝背场相连接。
作为优选， 太阳能电池片受光面设有 5 X 5的点阵孔洞。
作为优选， 太阳能电池片受光面设有 6 X 6的点阵孔洞。
作为优选， 点阵孔洞间距为 30. 8讓。
作为优选， 背面电极间距为 33. 5mm。
有益效果： 本实用新型与现有技术相比： 本实用新型采用有 k X k， k^5, k 为整数的点阵排列的孔洞设计，每根银栅线到孔洞的距离更近，搜集的电流更小， 栅线就可以设计的更细， 栅线总面积就减小， 导致栅线的遮光面积更小， 银浆的 耗量更低， 电池转化效率更高。
附图说明
图 1为本实用新型实施例 1受光面的结构示意图；
图 2为本实用新型实施例 1背光面的结构示意图。
具体实施方式
下面结合附图和具体实施案例对本实用新型做详细说明。
实施例 1
如附图 1和附图 2所示， 一种丽 T太阳能电池， 包括太阳能电池片 1， 太阳 能电池片 1设有 5 X 5的点阵孔洞 2， 点阵孔洞 2垂直贯穿太阳能电池片 1， 点阵 孔洞 2分别与受光面 3的正面电极和背光面的电极接触点 5连接，受光面 3栅线 4汇集的电流通过点阵孔洞 2到达背光面（未标示）的 5 X 5电极接触点 5， 点阵 孔洞 2为柱状或锥状结构， 太阳能电池片背光面设有 4 X 4点阵排列的背面电极 6， 背面电极 6通过导电通孔连接背面电极接触点， 导电通孔垂直贯穿太阳能电 池片 1， 背面电极 6和太阳能电池背光面的铝背场 7相连接。 点阵孔洞间距为 30. 8mm。 背面电极间距为 33. 5mm。
具体的， 可首先在太阳能电池片 1 上形成 5 X 5个垂直贯穿太阳能电池片 1 的点阵孔洞 2， 可通过激光打孔在所述太阳能电池片 1上形成导电通孔， 然后通 过丝网印刷工艺在所述导电通孔内填充导电介质浆料，固化成型形成所述点阵孔 洞 2， 导电通孔为柱状或锥状结构。
采用 5 X 5的点阵排列的孔洞设计，每根银栅线到孔洞的距离更近，搜集的电 流更小，栅线就可以设计的更细，栅线总面积就减小，导致栅线的遮光面积更小， 银浆的耗量更低， 电池转化效率更高。 实施例 2
一种丽 T太阳能电池， 包括太阳能电池片， 太阳能电池片设有 6 X 6的点阵 孔洞， 受光面栅线汇集的电流通过点阵孔洞到达背光面的 6 X 6电极接触点， 点 阵孔洞为柱状或锥状结构，太阳能电池片背光面设有 4 X 4点阵排列的背面电极， 背面电极和太阳能电池背光面的铝背场相连接。
其他部分与实施例 1相同。

Claims

权 利 要 求 书
1、 一种丽 T太阳能电池， 其特征在于： 包括太阳能电池片， 太阳能电池片设 有 kXk的点阵孔洞， 其中 k 5且 k为整数， 点阵孔洞垂直贯穿太阳能电池片， 受光面栅线汇集的电流通过点阵孔洞到达背光面的 kXk电极接触点， 点阵孔洞 为柱状或锥状结构， 太阳能电池片背光面设有 4X4点阵排列的背面电极， 背面 电极和太阳能电池背光面的铝背场相连接。
2、根据权利要求 1所述的丽 T太阳能电池， 其特征在于： 太阳能电池片受光 面设有 5X5的点阵孔洞。
3、根据权利要求 1所述的丽 T太阳能电池， 其特征在于： 太阳能电池片受光 面设有 6X6的点阵孔洞。
4、根据权利要求 2所述的丽 T太阳能电池， 其特征在于： 所述点阵孔洞间距 为 30.8mm
5、根据权利要求 3所述的丽 T太阳能电池， 其特征在于： 所述背面电极间距 为 33.5mm
PCT/CN2014/081779 2013-07-08 2014-07-07 一种mwt太阳能电池 WO2015003600A1 (zh)

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203423193U (zh) * 2013-07-08 2014-02-05 南京日托光伏科技有限公司 一种mwt太阳能电池
CN104465806A (zh) * 2014-12-18 2015-03-25 浙江鸿禧能源股份有限公司 一种太阳能电池片正电极栅线结构
CN209544365U (zh) * 2018-11-20 2019-10-25 浙江晶盛机电股份有限公司 正六边形mwt太阳能电池片
CN109545871A (zh) * 2018-11-20 2019-03-29 浙江晶盛机电股份有限公司 一种正六边形mwt太阳能电池半片、组件及排列方法
CN109935642A (zh) * 2019-03-29 2019-06-25 江苏日托光伏科技股份有限公司 一种MWT与TopCon结合的太阳能电池及其制造方法
CN110707171A (zh) * 2019-10-24 2020-01-17 荣马实业有限公司 一种mwt背接触式高效光伏电池及生产工艺
CN110797426B (zh) * 2019-11-06 2021-07-27 维科诚（苏州）光伏科技有限公司 太阳能光伏组件及其制备方法
CN110783421B (zh) * 2019-11-06 2021-07-27 维科诚（苏州）光伏科技有限公司 太阳能电池片及制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100258177A1 (en) * 2009-06-22 2010-10-14 Jihoon Ko Solar cell and method of manufacturing the same
CN102938432A (zh) * 2012-10-30 2013-02-20 晶澳（扬州）太阳能科技有限公司 一种mwt太阳电池组件的制备方法
CN102956746A (zh) * 2012-10-31 2013-03-06 常州天合光能有限公司 Mwt电池的制造方法
CN102969399A (zh) * 2012-11-20 2013-03-13 上饶光电高科技有限公司 Mwt太阳能电池及其制作方法
CN103094369A (zh) * 2013-01-15 2013-05-08 常州亿晶光电科技有限公司 一种晶硅mwt太阳能电池
CN203423193U (zh) * 2013-07-08 2014-02-05 南京日托光伏科技有限公司 一种mwt太阳能电池

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100258177A1 (en) * 2009-06-22 2010-10-14 Jihoon Ko Solar cell and method of manufacturing the same
CN102938432A (zh) * 2012-10-30 2013-02-20 晶澳（扬州）太阳能科技有限公司 一种mwt太阳电池组件的制备方法
CN102956746A (zh) * 2012-10-31 2013-03-06 常州天合光能有限公司 Mwt电池的制造方法
CN102969399A (zh) * 2012-11-20 2013-03-13 上饶光电高科技有限公司 Mwt太阳能电池及其制作方法
CN103094369A (zh) * 2013-01-15 2013-05-08 常州亿晶光电科技有限公司 一种晶硅mwt太阳能电池
CN203423193U (zh) * 2013-07-08 2014-02-05 南京日托光伏科技有限公司 一种mwt太阳能电池

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