WO2015001709A1 - El表示装置およびel表示装置の駆動方法 - Google Patents
El表示装置およびel表示装置の駆動方法 Download PDFInfo
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- WO2015001709A1 WO2015001709A1 PCT/JP2014/002995 JP2014002995W WO2015001709A1 WO 2015001709 A1 WO2015001709 A1 WO 2015001709A1 JP 2014002995 W JP2014002995 W JP 2014002995W WO 2015001709 A1 WO2015001709 A1 WO 2015001709A1
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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Definitions
- the present disclosure relates to a video display method and display apparatus for displaying a television image or the like on a display panel having an organic electroluminescence (Organic Electro-Luminescence; hereinafter referred to as EL or OLED) element, and a stereoscopic video.
- EL Organic Electro-Luminescence
- the present invention relates to a video display system, a video display method, and a display device configured to be suitable for display.
- Patent Document 1 discloses an EL display device including an EL element.
- the EL display device controls the current flowing through the EL element by lowering the on-resistance of the transistor written in the driving transistor. Thereby, the display brightness and current consumption of the EL display device can be suppressed.
- the present disclosure aims to provide an EL display device that suppresses overheating of the display panel and deterioration of the EL element, and an EL display device that can suppress deterioration in image quality and maintain good display quality.
- An EL display device includes a display screen in which a plurality of pixels are arranged in a matrix, and a first gate signal line and a second gate signal that are arranged for each row of the plurality of pixels.
- a current generation circuit for supplying a current, a current amount acquisition circuit for obtaining a magnitude of a current flowing through the plurality of pixels, and the gate driver circuit for generating the first control voltage to be output to the first gate signal line
- Each of the plurality of pixels includes an EL (Electro-Luminescence) element, a driving transistor for supplying a driving current to the EL element, A voltage between channels is adjusted based on a first control voltage supplied from a first gate signal line, and a first switching transistor disposed on the path of the drive current, and the second gate signal line And a
- an EL display device that suppresses overheating of the display panel and deterioration of the EL element, and an EL display device that can suppress deterioration in image quality and maintain good display quality.
- FIG. 1 is an explanatory diagram of an EL display device according to a technique on which the present disclosure is based.
- FIG. 2 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the first embodiment.
- FIG. 3 is an explanatory diagram illustrating a configuration of the EL display device according to the present disclosure.
- FIG. 4 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the present disclosure.
- FIG. 5 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the present disclosure.
- FIG. 6 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the present disclosure.
- FIG. 1 is an explanatory diagram of an EL display device according to a technique on which the present disclosure is based.
- FIG. 2 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the first embodiment.
- FIG. 3 is an explanatory diagram illustrating a configuration
- FIG. 7 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the present disclosure.
- FIG. 8 is an explanatory diagram illustrating a configuration of the switching circuit of the EL display device according to the present disclosure.
- FIG. 9 is a diagram for explaining voltage binary driving and voltage ternary driving in the case of an N-channel transistor.
- FIG. 10 is a diagram for explaining voltage binary driving and voltage ternary driving in the case of a P-channel transistor.
- FIG. 11 is an explanatory diagram of an EL display device according to the present disclosure.
- FIG. 12 is an explanatory diagram illustrating a pixel configuration of an EL display device according to the present disclosure.
- FIG. 13 is an explanatory diagram illustrating a pixel configuration of an EL display device according to the present disclosure.
- FIG. 14 is an explanatory diagram illustrating a configuration of an EL display device according to the present disclosure.
- FIG. 15 is an explanatory diagram illustrating a pixel configuration of an EL display device according to the present disclosure.
- FIG. 16 is an explanatory diagram illustrating a pixel configuration of an EL display device according to the present disclosure.
- FIG. 17 is an explanatory diagram illustrating a pixel configuration of an EL display device according to the present disclosure.
- FIG. 18 is a display that employs the EL display device of the present disclosure.
- FIG. 19 is a digital camera that employs the EL display device of the present disclosure.
- FIG. 20 is a notebook personal computer employing the EL display device of the present disclosure.
- An active matrix (Active-Matrix, hereinafter sometimes abbreviated as AM) type organic EL display device having organic EL elements in a matrix is adopted for a display panel such as a smartphone and commercialized.
- an EL layer is formed between an anode electrode (terminal) and a cathode electrode (terminal).
- the EL element emits light by current or voltage supplied to the anode electrode (terminal) and the cathode electrode (terminal). Therefore, the display luminance is proportional to the current consumption, and the current consumption increases as the display luminance increases.
- FIG. 1 is an explanatory diagram of an EL display device according to the technology that is the basis of the present disclosure.
- FIG. 1 shows an example of a pixel circuit of an organic EL element.
- the pixel circuit basically includes a light emitting element (EL element) 15, a driving transistor 11 a that drives the light emitting element (EL element) 15, and a switching transistor 11 b that applies a video signal to the driving transistor 11 a.
- the drain side of the driving transistor 11a is connected to an EL voltage source Vdd (power supply device or the like).
- Vdd is an anode voltage.
- the light emission luminance of the EL element 15 can be adjusted by controlling the current Id of the EL element 15 by the driving transistor 11a and the switching transistor 11b.
- the current Id flowing through the EL element 15 is detected and the voltage of the voltage source Vdd is varied to reduce the power loss by suppressing the current Id.
- display quality deterioration luminance unevenness, flicker
- the transistor 11 refers to the driving transistor 11a and the switching transistors 11b, 11c, and 11d.
- the EL display device is characterized in that current control of the EL element is performed by a control transistor (switching transistor 11d) different from the driving transistor 11a applied to the EL element 15. This controls the on-characteristic by changing the voltage applied to the gate of the switching transistor 11d, and controls the current of the EL element 15 via the driving transistor 11a.
- the EL drive current can be controlled without causing deterioration in display quality due to the characteristic unevenness of the driving transistor 11a, the heat generation of the entire EL pixel circuit can be suppressed, and the deterioration of the EL element characteristics due to heat generation can be prevented. .
- each drawing may be omitted, enlarged, or reduced for easy understanding and drawing.
- the EL display device illustrated or described in the embodiment of the present disclosure is used as the EL display device 151 of the notebook personal computer of FIG. It goes without saying that it can be configured.
- a touch panel or the like may be added to the EL display panel of the present disclosure shown in FIG. 2 to configure the information display device shown in FIGS. 18, 19, and 20 described in detail later.
- the EL display device is a concept including system devices such as information devices.
- the concept of the EL display panel broadly includes system equipment such as information equipment.
- the driving transistor and the switching transistor are described as thin film transistors, but the present invention is not limited thereto.
- a thin film diode (TFD), a ring diode, or the like can also be used.
- the transistor is not limited to a thin film element, and may be a transistor formed on a silicon wafer.
- a transistor formed of a silicon wafer, peeled off and transferred to a glass substrate is exemplified.
- a display panel in which a transistor chip is formed using a silicon wafer and a glass substrate is mounted by bonding is exemplified.
- the transistor according to the present disclosure may be an FET, a MOS-FET, a MOS transistor, or a bipolar transistor. These are also basically thin film transistors.
- varistors, thyristors, ring diodes, photodiodes, phototransistors, PLZT elements may be used.
- the transistor according to the present disclosure preferably employs an LDD (Lightly Doped Drain) structure for both N-channel and P-channel transistors.
- LDD Lightly Doped Drain
- the transistors include high-temperature polysilicon (HTPS), low-temperature polysilicon (LTPS), continuous grain boundary silicon (CGS), and continuous oxide semiconductor (CGS). : Any one of those formed by Transparent Amorphous Oxide Semiconductors (IZO), amorphous silicon (AS), infrared RTA (RTA: Rapid thermal annealing).
- HTPS high-temperature polysilicon
- LTPS low-temperature polysilicon
- CCS continuous grain boundary silicon
- CCS continuous oxide semiconductor
- IZO Transparent Amorphous Oxide Semiconductors
- AS amorphous silicon
- RTA rapid thermal annealing
- all the transistors constituting the pixel 16 are configured by the P channel.
- the present disclosure is not limited only to configuring the transistors of the pixel 16 (the driving transistor 11a and the switching transistors 11b and 11d) with a P channel. You may comprise only N channel. Moreover, you may comprise using both N channel and P channel. Further, the driving transistor 11a may be configured using both a P-channel transistor and an N-channel transistor.
- the switching transistors 11b and 11d are not limited to transistors, and may be analog switches configured using both P-channel transistors and N-channel transistors, for example.
- the transistor preferably has a top gate structure.
- the parasitic capacitance is reduced, the gate electrode pattern of the top gate becomes a light shielding layer, and the light emitted from the EL element 15 is blocked by the light shielding layer, so that the malfunction of the transistor and the off-leakage current can be reduced. It is.
- the gate signal lines 17a and 17b driven (controlled) by the gate driver IC (gate driver circuit) 12 (gate driver ICs (circuits) 12a and 12b) have low impedance. Accordingly, the same applies to the configuration or structure of the gate signal lines 17a and 17b.
- low-temperature polysilicon Low-temperature polycrystalline silicon
- the transistor has a top gate structure and a small parasitic capacitance, so that N-channel and P-channel transistors can be manufactured, and a copper wiring or copper alloy wiring process can be used for the process.
- the copper wiring preferably employs a three-layer structure of Ti—Cu—Ti.
- the wiring preferably employs a three-layer structure of molybdenum (Mo) -Cu-Mo.
- the EL display device includes a display screen 20 having a plurality of EL elements 15.
- the EL display device generates, as peripheral circuits of the display screen 20, a gate driver IC (circuit) 12a that drives the gate signal line 17a, a gate driver IC (circuit) 12b that drives the gate signal line 17b, and a video signal.
- the gate signal line 17a is called a gate signal line GS, and the gate signal line 17b is called a gate signal line GE.
- a gate signal line 17a is connected to the gate terminal of the switching transistor 11b, and a gate signal line 17b is connected to the gate terminal of the switching transistor 11d.
- the display screen 20 includes EL elements 15 arranged in a matrix.
- the display screen 20 displays an image based on a video signal input from the outside to the EL display device.
- the pixel transistor is a P-channel transistor.
- the driving transistor 11 a generates a current that flows through the EL element 15.
- the switching transistor 11 b is generated by the source driver IC (circuit) 14 and applies the video signal applied to the source signal line 18 to the driving transistor 11 a of the pixel 16.
- the switch transistor 11d is arranged or formed on the path of the wiring through which the drive current to the EL element 15 flows.
- the path is a path through which a driving current flows, and the switching transistor 11d may be at any position between the anode Vdd terminal and the cathode Vss terminal.
- the capacitor 19a is a capacitor in which the electrode 31 that is the first electrode is connected to the gate terminal of the driving transistor 11a, and the second electrode is connected to the source terminal of the driving transistor 11a.
- the capacitor 19a holds a voltage corresponding to the signal voltage supplied from the source signal line 18. For example, after the switching transistor 11b is turned off, the potential between the gate and source electrodes of the driving transistor 11a is stabilized. The current supplied to the EL element 15 from the driving transistor 11a is stabilized.
- the switching transistor 11d is used in the linear region and is used in the nonlinear region. Switching between the linear region and the nonlinear region is operated by a gate voltage applied to the gate terminal of the switching transistor 11d.
- the EL element 15, the driving transistor 11a, and the switching transistor 11d are arranged.
- the EL element 15, the driving transistor 11a, and the switching transistor 11d are connected in series.
- the switching transistor When the on-voltage applied to the gate terminal is increased, the switching transistor is turned on strongly and operates in the saturation region. The voltage between the channels (source-drain) of the switching transistor 11d becomes low. Accordingly, a sufficient voltage is applied between the channels of the EL element 15 and the driving transistor 11a. Therefore, the constant current from the driving transistor 11 a is supplied to the EL element 15.
- the switch transistor 11d When the ON voltage applied to the gate terminal of the switch transistor 11d is lowered, the switch transistor 11d increases the ON resistance between channels (operates in a linear region). As the on-resistance between the channels (between the source and drain) of the switching transistor 11d increases, the channel-to-channel voltage increases. Therefore, it becomes difficult to apply a voltage to the EL element 15 between the channels of the driving transistor 11a. Therefore, the current supplied from the driving transistor 11a to the EL element 15 is suppressed.
- the gate driver ICs (circuits) 12a and 12b include a plurality of scanning / output buffer circuits 121a, 121b, and 121c (see FIG. 7).
- the gate driver ICs (circuits) 12a and 12b are connected to the gate signal lines 17a and 17b, respectively, and by outputting selection signals to the gate signal lines 17a and 17b, respectively, the switching transistors 11b and 11d is a drive circuit having a function of controlling conduction (on) or non-conduction (off) of 11d.
- the gate driver ICs (circuits) 12a and 12b are arranged on the left and right of the display screen 20, and at least the gate signal line 17 of each pixel 16 is the gate driver IC (circuit) 12a or the gate.
- the driver IC (circuit) 12b is connected. 2 and 3, the gate signal line 17a (gate signal line GS) is connected to the gate driver IC (circuit) 12a, and the gate signal line 17a is connected to the gate terminal of the switching transistor 11b.
- the gate signal line 17b (gate signal line GE) is connected to the gate driver IC (circuit) 12b, and the gate signal line 17b is connected to the gate terminal of the switching transistor 11d.
- An EL display device includes a display screen in which a plurality of pixels are arranged in a matrix, gate signal lines 17 (gate signal lines 17a and 17b) that are arranged for each pixel row of the display screen, Source signal line 18 arranged for each pixel column of the display screen, gate driver circuits (gate driver ICs) 12a and 12b for driving gate signal lines 17a and 17b, and source driver IC (source for driving source signal line 18) Driver circuit) 14.
- the gate driver ICs (circuits) 12a and 12b output a selection signal having a first pulse and a second pulse.
- the source driver IC (circuit) 14 outputs or generates a video signal corresponding to the input image.
- the extinction state is sequentially started in units of rows of the EL elements 15 based on the first pulse among the selection signals input via the gate signal lines 17a and 17b.
- a video signal (light emission data) is written from the source signal line 18 based on the second pulse of the selection signal.
- the video signal is held in the capacitor 19 a of the pixel 16.
- the driving transistor 11a generates a light emission current (EL current) Id based on the video signal held in the capacitor 19a.
- the switching transistor 11d is turned on by the first pulse, the light emission current Id is supplied to the EL element 15.
- the drive circuit unit starts writing the emission data to the first row of the plurality of EL elements 15 before the start of the extinction state of the last row of the plurality of EL elements 15.
- the selection signal and the video signal are supplied to the gate signal lines 17a and 17b and the source signal line 18, respectively, so that the writing of the light emission data to the last row of the plurality of EL elements 15 is completed. To do.
- the current control of the EL element 15 can be performed by the control transistor (switching transistor 11d) different from the driving transistor 11a applied to the EL element 15. it can.
- This controls the ON characteristic by changing the voltage applied to the gate of the switching transistor 11d, and controls the current of the EL element 15 via the driving transistor 11a.
- the EL drive current can be controlled without causing deterioration in display quality due to uneven characteristics of the driving transistor 11a, and heat generation of the entire EL pixel circuit is suppressed, thereby preventing deterioration of EL element characteristics due to heat generation.
- FIG. 4 is an explanatory diagram showing a pixel configuration of the EL display device according to the present embodiment.
- the current detection circuit 41 detects the magnitude of the current flowing through the display screen 20. As the current, at least one of the currents flowing in the anode Vdd and the cathode Vss is detected. Further, not only the magnitude of the current but also the change or rate of change of the magnitude of the current may be considered.
- a current detection circuit 41 is disposed on the anode wiring or terminal. The current detection circuit 41 corresponds to the current detection circuit according to the present embodiment.
- an on-voltage generation circuit 43 is an on-voltage generation circuit having at least one of a function of generating an on-voltage (Von) and a function of varying the on-voltage.
- the on-voltage generation circuit 43 is a control voltage generation circuit according to the present embodiment.
- the on-voltage (Von) is supplied to the gate driver IC (circuit) 12b, and the on-voltage is output to the gate signal line 17b (gate signal line GE).
- the switching transistor 11d is a P-channel transistor. Therefore, the on-voltage is a negative voltage. The off voltage is a positive voltage.
- the EL element 15, the driving transistor 11a, and the switching transistor 11d are arranged.
- the EL element 15, the driving transistor 11a, and the switching transistor 11d are connected in series.
- the switch transistor 11d operates in the saturation region when in the strong on state.
- the voltage between the channels (source-drain) of the switching transistor 11d becomes low. Accordingly, a sufficient voltage is applied between the channels of the EL element 15 and the driving transistor 11a. Therefore, the constant current from the driving transistor 11 a is supplied to the EL element 15.
- the switching transistor 11d When the ON voltage applied to the gate terminal of the switching transistor 11d is reduced, the switching transistor 11d has an increased ON resistance between channels (between source and drain) (operates in a linear region). As the on-resistance between the channels of the switching transistor 11d increases, the channel-to-channel voltage increases. Therefore, it becomes difficult to apply a voltage to the EL element 15 between the channels of the driving transistor 11a. Therefore, the current supplied from the driving transistor 11a to the EL element 15 is suppressed.
- the channel-to-channel voltage Vd of the switching transistor 11d can be changed by changing or adjusting the on-voltage applied to the gate terminal of the switching transistor 11d.
- the anode terminal and cathode terminal voltages can be separated into the channel voltage Va of the driving transistor 11a, the channel voltage Vd of the switching transistor 11d, and the terminal voltage Ve of the EL element 15.
- the inter-channel voltage Vd of the switching transistor 11d changes. Since the cathode voltage Vss and the anode voltage Vdd are constant voltages, when Vd changes, the channel voltage Va of the driving transistor 11a and the terminal voltage Ve of the EL element 15 change. Therefore, the current flowing through the EL element 15 can be changed by changing the Vd voltage. The change in the current of the EL element 15 changes the current flowing through the display screen 20. Therefore, the current flowing through the display screen 20 can be changed by changing the ON voltage.
- the drive transistor 11a has characteristic variations due to manufacturing problems.
- the EL element 15 also has characteristic variations due to problems such as manufacturing. Variations in the characteristics of the driving transistor 11a and the EL element 15 cause streak unevenness on the display screen 20 and lower the display quality.
- the anode voltage Vdd may be reduced. If the anode voltage Vdd is lowered, the current of the display screen 20 can be suppressed. However, since the anode voltage Vdd is a voltage common to the display screen 20, it is directly reflected in the characteristic variation of the EL element 15 and the driving transistor 11a. Is done. Therefore, streak unevenness is displayed. Therefore, the display quality is lowered.
- the anode voltage Vdd or the cathode voltage Vss common to the display screen 20 is changed, the brightness of the display screen changes simultaneously with the change. Accordingly, flicker occurs on the display screen 20 based on the change in the Vdd voltage or the change in the Vss voltage.
- This disclosure changes the inter-channel voltage Vd of the switching transistor 11d by changing the on-voltage to the gate terminal of the switching transistor 11d arranged in the current path of the driving transistor 11a.
- the change in Vd is moderately divided into the channel voltage Va of the driving transistor 11a and the terminal voltage Ve of the EL element 15 based on the characteristics of the transistor and the EL element 15.
- the voltage division is executed according to the characteristic variation of the driving transistor 11a and the EL element 15.
- the characteristics of the driving transistor 11 a and the EL element 15 vary moderately in the display screen 20. Therefore, even if the on-voltage of the switching transistor 11d is changed, streaks based on the characteristics of the transistors and the like are generated in a dispersed manner on the display screen 20, or the generation is suppressed. Accordingly, the occurrence of streak unevenness as when the anode voltage Vdd, cathode voltage Vss, etc. common to the display screen 20 are reduced (changed) is reduced, and flicker is not generated.
- a current detection circuit (means) 41 detects a current Id flowing through the display screen 20, and based on the detected current magnitude or current change rate, The on-voltage generated by 43 is changed. The current flowing through the display screen 20 is changed by changing the on-voltage.
- the present disclosure detects, for example, when the current flowing through the display screen 20 in the current detection circuit 41 increases or when the current exceeds a predetermined value, and detects or measures the current or the data proportional to the current.
- the voltage generation circuit 43 is controlled.
- the on-voltage generating circuit 43 changes the on-voltage applied to the gate terminal of the switching transistor 11d so as to increase the inter-channel voltage Vd of the switching transistor 11d (to increase the on-resistance of the switching transistor 11d). As a result, the current flowing through the EL element 15 is suppressed.
- the present disclosure detects, for example, when the current flowing through the display screen 20 is reduced by the current detection circuit 41 or when the current is smaller than a predetermined value, and is based on the detected or measured current or data proportional to the current.
- the voltage generation circuit 43 is controlled.
- the on-voltage generating circuit 43 changes the on-voltage applied to the gate terminal of the switching transistor 11d so as to reduce the inter-channel voltage Vd of the switching transistor 11d (so as to reduce the on-resistance of the switching transistor 11d).
- the current flowing through the EL element 15 is increased, and control is performed so that light can be emitted with higher peak luminance.
- FIG. 5 is a diagram showing the configuration of the EL display device according to the present embodiment, which explains the current detection circuit 41 in more detail.
- the gate driver circuit (IC) 12b (see FIG. 5) outputs voltage source terminals Von, Voff1, and Voff2 (see FIG. 9).
- the on-voltage generation circuit 43 has a feedback (FB) control line 70a for adjusting the on-voltage (see FIG. 5).
- the control transistor (switch transistor) 11d of the gate driver IC (circuit) 12b is varied by changing the voltage of the ON voltage generation circuit 43, which is the ON voltage of the control transistor (switch transistor) 11d, using the FB control line 70a. ON characteristics (ON resistance, channel voltage Vd) can be changed.
- the gate driver IC (circuit) 12 b when the ON voltage as the power supply voltage applied to the gate driver IC (circuit) 12 b is increased, the gate driver IC (circuit) 12 b outputs to the gate signal line 17. This also increases the on-voltage. Therefore, the ON voltage applied to the gate terminal of the switching transistor 11d is also increased. In addition, the ON voltage as the power supply voltage applied to the gate driver IC (circuit) 12b is also reduced. Therefore, the on-voltage output from the gate driver IC (circuit) 12b to the gate signal line 17b is also reduced. From the above, the on-voltage applied to the gate terminal of the switching transistor 11d can be varied by adjusting, varying, or setting the on-voltage as the power supply voltage of the gate driver IC (circuit) 12b. Therefore, the current control of the EL element 15 can be performed.
- the current of the EL element 15 can be controlled by increasing / decreasing (high or low) the on-voltage of the switch transistor 11d and the like, so that the current value Id of the voltage source Vdd (power supply etc.) of the EL element is By detecting and feeding back to the ON voltage, the EL element current of the entire panel can be controlled.
- the EL element current control, the switching transistor 11d, the driving transistor 11a, and the EL element 15 existing between the voltage source Vdd on the anode side of the EL element 15 and the voltage source Vss on the cathode side are appropriately separated. Therefore, the characteristic unevenness of the driving transistor 11a and the EL element 15 on the display screen 20 is not displayed. Flicker does not occur on the display screen 20 unlike when the anode voltage Vdd is changed.
- the display screen 20 includes a current detection circuit 41 (see FIG. 5).
- the current detection circuit 41 is connected in series to a path of a panel current (EL element current) Id that is the sum of currents flowing through all the EL elements 15 in the display screen 20.
- the current detection circuit 41 is connected to the on-voltage generation circuit 43 in order to control Von, which is the on-voltage of the switching transistor 11d.
- a current detection circuit 41 is inserted between the voltage source Vdd and the switching transistor 11d.
- the current detection circuit 41 includes a current detection resistor 41d and a differential amplifier 41c (see FIG. 6) for detecting a voltage generated in the current detection resistor 41d by the EL element current Id. Generates a voltage value obtained by amplifying the EL element current Id in accordance with the Id current to an arbitrary amplification amount, and the level of the voltage generated by the differential amplifier 41c by the switching element (transistor) 41b and the amplifier 41a is changed to the subsequent stage. The level is adjusted to match the FB control line 70a of the on-voltage generation circuit 43.
- the amplifier 41a is connected to the feedback circuit (FB control line 70a) of the on-voltage generation circuit 43, and adjusts the on-voltage of the on-voltage generation circuit 43 so that the EL element current Id does not exceed a certain level.
- FIG. 6 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the present disclosure.
- an increase in the EL element current Id increases the voltage of the FB control line 70a and decreases the on-voltage, thereby increasing the on-resistance of the switching transistor 11d.
- the value of current flowing to the EL element 15 is reduced.
- the above circuit performs an operation opposite to that of the n-type, so that the EL element 15 becomes overcurrent, but the switching element (transistor) 41b has a phase inversion configuration. Can be solved.
- phase inversion refers to changing the connection of the resistor 41e attached between the + terminal of the amplifier 41a and the emitter of the switching element (transistor) 41b between the + terminal of the amplifier 41a and the collector of the switching element (transistor) 41b. (Not shown).
- the current detection circuit 41 detects the current Id flowing through the entire display screen 20, but the present invention is not limited to this.
- the display screen 20 is divided into a plurality of parts (for example, the display screen is divided into a group of a plurality of pixel rows), and a current detection circuit 41 is arranged for each of the divided display screens 20, and the magnitude or current of the flowing current
- the on-voltage of the switching transistor 11d of each display screen may be changed or adjusted based on the detected current or the like.
- the current detection circuit 41 is not limited to being arranged for each divided display screen 20, and for example, the magnitude of the flowing current or the amount of change in the current is detected for each pixel row. Based on the current or the like, the on-voltage of the switching transistor 11d in each pixel row may be changed or adjusted.
- the magnitude of the flowing current or the amount of change in the current may be detected, and the on-voltage of the switching transistor 11d of each pixel may be changed or adjusted based on the detected current or the like.
- the gate driver ICs (circuits) 12a and 12b can output ternary voltages (Von, Voff1, Voff2) from the output terminal 123. Further, the gate driver ICs (circuits) 12a and 12b are configured to output a binary voltage (Von, Voff1) output mode (gate voltage binary drive) and a ternary voltage (Von, Voff1, Voff2) output mode (gate voltage ternary value). Driving) can be set by a selection signal line (SEL terminal) (see FIG. 7).
- FIGS. 7 and 8 are explanatory diagrams illustrating a pixel configuration of the EL display device according to the present disclosure.
- the setting at the SEL terminal is configured so that it can be set for each of the scanning / output buffer circuits 121a, 121b, 121c, and 121d formed or arranged in the gate driver ICs (circuits) 12a and 12b.
- FIG. 9 is a diagram for explaining voltage binary driving and voltage ternary driving in the case of an N-channel transistor.
- FIG. 10 is a diagram for explaining voltage binary driving and voltage ternary driving in the case of a P-channel transistor.
- the output voltage is three voltages: an off voltage (Voff1, Voff2) and an on voltage (Von). Since three voltages are output, this is called gate voltage ternary driving. Alternatively, it is called gate overdrive driving.
- a driving method in which driving is performed with two voltages, an off voltage (Voff1) and an on voltage (Von), is called gate voltage normal driving or gate voltage binary driving (see FIG. 9A).
- Von is applied to the selected gate signal line 17a (or 17b), and Voff2 voltage is applied in the next pixel row selection period. Further, the Voff1 voltage is applied in the next pixel row selection period. The Voff2 voltage is lower than the Voff1 voltage. For this reason, the potential difference between the Von voltage and the Voff2 voltage is larger than the potential difference between the Von voltage and the Voff1 voltage. Further, the switching transistor 11b of the pixel 16 is turned off when the voltage Voff1 is applied.
- the time for Voff1 is t1.
- the time for passing Voff1 is t2 time (t2 ⁇ t1). Therefore, in the gate voltage ternary driving, since the time when Voff1 is set is t2 hours, the switching transistor 11b of the pixel 16 is turned off at high speed. Therefore, in the gate voltage ternary driving, crosstalk between pixel rows does not occur.
- the gate voltage binary drive and the gate voltage ternary drive are determined by the logic voltage applied to the SEL (SEL1 to SEL4) terminals in FIG.
- the on-voltage is a voltage that turns on the transistor 11 of the pixel 16.
- the voltages Voff1 and Voff2 are voltages for turning off the transistor 11 of the pixel 16.
- the Voff2 voltage is used to quickly deselect (off) the video signal after writing it to the pixel selected to apply the video signal.
- the Voff1 voltage is used to suppress a change in transistor characteristics such as a Vt shift when a deep voltage (Voff2) is applied to the gate terminal of the transistor 11.
- the gate voltage binary drive and the gate voltage ternary drive are set by a logic signal applied to the SEL (SEL1, SEL2) terminal.
- the logic voltage applied to the SEL (SEL1 to SEL4) terminals shown in FIG. 7 is “L”
- the gate voltage binary drive mode is set.
- the logic voltage applied to the SEL (SEL1 to SEL4) terminals is “H”
- the gate voltage ternary drive mode is set.
- Each SEL (SEL1 to SEL4) terminal is connected to the scan / output buffer circuits 121a to 121d, and the output of the scan / output buffer circuit 121 is driven by the gate voltage binary drive or the gate voltage ternary drive by the logic of the SEL terminal.
- the data input terminals (D1, D2, D3, D4) and clock input terminals (Clk1a, Clk1b, Clk1c, Clk1d, Clk2) can be set independently.
- FIG. 8 is an explanatory diagram illustrating a configuration of the switching circuit of the EL display device according to the present disclosure. Any one of a terminal (Voff2 voltage), b terminal (Voff1 voltage), and c terminal (on voltage) is selected and applied to the gate signal line 17 by the d terminal input signal (2 bits) of the switching circuit.
- FIG. 10 is a diagram for explaining voltage binary driving and voltage ternary driving in the case of a P-channel transistor.
- the gate voltage ternary driving and the gate voltage binary driving are performed with an on voltage (Von) and an off voltage (Voff1, The polarity of Voff2) is opposite to the polarity of the on-voltage (Von) and off-voltage (Voff1, Voff2) shown in FIG.
- an EL display device is an active matrix EL display device including a display screen in which pixels 16 are arranged in a matrix as illustrated in FIG.
- a display screen having pixels arranged in a shape, a first gate signal line and a second gate signal line, and a first gate signal line and a second gate signal arranged for each row of a plurality of pixels
- a gate driver circuit that outputs a control voltage to a line
- a current generation circuit that supplies current to an EL element of a display screen
- current detection means that determines the magnitude of a current that flows through a plurality of pixels
- a control voltage generation circuit for generating a control voltage to be output to the gate signal line, and each of the plurality of pixels includes a light emitting element, a driving transistor for supplying a driving current to the light emitting element, Conduction and non-conduction are switched based on the control voltage supplied from the first gate signal line, and the first switch transistor disposed on the path of the drive current and the second gate
- the control voltage generation circuit is characterized by varying the control voltage based on the output result of the current detection circuit.
- the control voltage applied to the first switch transistor is changed to increase the on-resistance of the first switch transistor.
- the channel-to-channel voltage (drain-source terminal voltage) of the first switch transistor increases, and the current flowing to the EL element of the pixel is suppressed.
- the control voltage applied to the first switch transistor is changed to lower the on-resistance of the first switch transistor.
- the channel-to-channel voltage (drain-source terminal voltage) of the first switching transistor is reduced, and the current flowing to the EL element of the pixel can be increased or easily flowed.
- the current flowing through the display screen can be controlled by varying the on-resistance of the first switch transistor disposed on the path of the drive current to the EL element. Therefore, the overcurrent flowing through the display screen can be suppressed, and since the suppression is performed gradually, no flicker occurs. Further, since the current flowing through the display screen is controlled by varying the channel-to-channel voltage of the first switching transistor, variations in characteristics of the driving transistor and the EL element of each pixel are moderated. Therefore, it is possible to suppress the characteristic unevenness of the driving transistor and the EL element from being visually recognized, and to realize a good image display.
- the current detection circuit 41 includes a current detection resistor that detects the panel current Id and a differential amplifier that detects the voltage across the current detection resistor.
- the voltage source Vdd and the switching transistor (Control transistor) 11d is a high-side type in which a current detection circuit 41 is inserted (see FIG. 5).
- the current detection circuit 41 is inserted between the anode side of the EL element and the voltage source Vss.
- a low-side type can also be configured.
- FIG. 11 shows a configuration of an EL display device in which a cathode current is detected by the current detection circuit 41.
- the current detection circuit 41 detects the current Id flowing through the display screen 20 connected to the cathode side of the EL element 15 by the current detection circuit (means) 41, and the magnitude of the detected current or The on-voltage generated by the on-voltage generating circuit 43 is changed based on the current change rate.
- the current flowing through the display screen 20 is changed by changing the on-voltage.
- the detailed operation of the current detection circuit 41 is the same as that of the current detection circuit 41 shown in FIG.
- the EL display device described above does not limit the current detection circuit to a resistor.
- a current detection circuit including a current transformer 4, a Hall element 41f, and an amplifier 41g. 51 may be sufficient.
- the current detection method of the current detection circuit 51 is only different from the current detection method of the current detection circuit 41 described above, and the difference depending on the current measurement location (high side type / low side type) does not affect the control. It goes without saying that even the current detection circuit 51 can suppress the EL element current in the same manner as the current detection circuit 41. In this configuration, there is no need to arrange a pick-up resistor or the like in the middle of the anode wiring and the cathode wiring, and the effect of facilitating the configuration is exhibited.
- FIG. 2 shows an embodiment in which one pixel is composed of three transistors. There are two gate signal lines 17 connected to one pixel.
- the present disclosure is not limited to this, and can be applied to other pixel configurations as shown in FIG.
- the switching transistor 11e has a gate terminal connected to the gate signal line 17c and one of a source and a drain connected to Vref.
- the switching transistor 11c has a function of determining the timing at which Vini is applied to the electrode of the capacitor 19a.
- the switching transistor 11e and the switching transistor 11c are configured by, for example, n-type thin film transistors (n-type TFTs).
- the driving transistor 11 a is a driving element whose drain is connected to the anode voltage Vdd that is the first power supply line and whose source is connected to the anode of the EL element 15.
- the driving transistor 11a converts a voltage corresponding to the signal voltage applied between the gate and the source into a drain current corresponding to the signal voltage. Then, this drain current is supplied to the EL element 15 as a signal current.
- the driving transistor 11a is composed of, for example, an n-type thin film transistor (n-type TFT).
- the EL element 15 is a light emitting element whose cathode is connected to the cathode voltage Vss which is the second power supply line, and emits light when the signal current flows through the driving transistor 11a.
- the switch transistor 11d is a switch transistor having a gate connected to the gate signal line 17b and one of the source and drain terminals connected to the drain terminal of the drive transistor 11a.
- the switching transistor 11d is formed of, for example, an n-type thin film transistor (n-type TFT).
- the capacitor 19a first stores the source potential of the driving transistor 11a (the potential of the source signal line 18) in a steady state in a state where the switching transistor 11b is conductive. After that, even when the switching transistor 11b is turned off, the potential of the capacitor 19a is determined, so that the gate voltage of the driving transistor 11a is determined.
- the capacitor 19a is formed or arranged so as to overlap (overlap) the source signal line 18 and the gate signal line 17 (at least one of 17a, 17b, 17c, and 17d). In this case, the degree of freedom in layout is improved, a wider space between elements can be secured, and the yield is improved.
- the EL display device includes as many source signal lines 18 as the number of pixel columns.
- the gate signal lines 17a and 17b are connected to both of the gate driver ICs (circuits) 12a and 12b, respectively, and are connected to each EL element 15 belonging to the pixel row including the EL element 15.
- the gate signal lines 17a and 17b refer to the function of supplying the timing for writing the signal voltage to each EL element 15 belonging to the pixel row including the pixel 16, and the gate of the driving transistor 11a included in the EL element 15. It has a function of supplying timing for applying a voltage.
- anode voltage Vdd 10 to 18 (V)
- reference voltage Vref 1.5 to 3 (V)
- cathode voltage Vss 0.5 to 2.5 (V)
- initial voltage Vini 0 to -3 (V).
- the switching transistor 11d may be disposed or formed between the source terminal of the driving transistor 11a and the anode terminal of the EL element 15.
- the gate terminal of the switch transistor 11d is connected to the gate signal line 17b.
- the gate terminal of the switching transistor 11e is connected to the gate signal line 17c.
- the gate terminal of the switching transistor 11b is connected to the gate signal line 17a.
- the gate terminal of the switching transistor 11c is connected to the gate signal line 17d.
- the gate signal line 17b connected to the gate terminal of the switching transistor 11d is the gate signal line GE
- the gate signal line 17c connected to the gate terminal of the switching transistor 11e is the gate signal line.
- GR the gate signal line 17a connected to the gate terminal of the switching transistor 11b may be referred to as a gate signal line GS
- the gate signal line 17d connected to the gate terminal of the switching transistor 11c may be referred to as a gate signal line GI.
- the switching transistor 11d When an on-voltage is applied to the gate signal line 17b (GE), the switching transistor 11d is turned on, and the light emission current from the driving transistor 11a is supplied to the EL element 15.
- the EL element 15 emits light based on the magnitude of the light emission current.
- the magnitude of the light emission current is determined by applying the video signal applied to the source signal line 18 to the pixel 16 by the switching transistor 11b.
- the gate terminal of the driving transistor 11a is connected to one terminal of the capacitor 19a, and the other terminal of the capacitor 19a is connected to the source terminal of the driving transistor 11a.
- the drain terminal of the switching transistor 11 b is connected to the source signal line 18.
- the source driver IC (circuit) 14 applies a video signal to the source signal line 18.
- FIG. 14 is an explanatory diagram illustrating a pixel configuration of the EL display device according to the present disclosure.
- the gate signal lines 17 a and 17 b are connected to gate driver ICs (circuits) 12 a and 12 b arranged on the left and right of the display screen 20.
- the gate signal lines 17c and 17d are connected to a gate driver IC (circuit) 12a disposed on the left side of the display screen 20 (see FIG. 14).
- the gate driver IC (circuit) 12a applies a pixel selection voltage (ON voltage Von) to the gate signal lines 17a, 17b, 17c and 17d.
- the gate driver IC (circuit) 12b applies a pixel selection voltage (ON voltage Von) to the gate signal lines 17a and 17b.
- the switching transistor 11b is turned on, and the video signal applied to the source signal line 18 is applied to the pixel 16.
- a display screen 20 in which pixels 16 having EL elements 15 are formed in a matrix is formed.
- gate driver ICs (circuits) 12a and 12b are connected to both ends of the gate signal lines 17a and 17b.
- a gate driver IC (circuit) 12a is connected to one side of the gate signal lines 17c and 17d.
- the gate driver ICs (circuits) 12a and 12b are mounted on a COF (Chip On Film) (not shown).
- a source signal line 18 is connected to each pixel 16.
- a source driver IC (circuit) 14 is connected to one end of the source signal line 18.
- the source driver IC (circuit) 14 is mounted on a COF (Chip On Film) (not shown).
- the source driver IC (circuit) 14 outputs a video signal, and the video signal is supplied or applied to the source signal line 18.
- FIG. 15 is an explanatory diagram of the EL display device according to this embodiment corresponding to the pixel configuration of FIG.
- the on-voltage (Von) is supplied to the gate driver IC (circuit) 12b, and the on-voltage is output to the gate signal line 17b (gate signal line GE).
- the switching transistor 11d is an N-channel transistor. Therefore, the on voltage is a positive voltage. The off voltage is a negative voltage.
- the voltage Ve is less likely to be applied to the EL element 15, and the current to the EL element is less likely to flow (suppressed).
- the inter-channel voltage Vd of the switching transistor 11d can be changed by changing the ON voltage.
- the inter-channel voltage Vd of the switching transistor 11d changes. Since the cathode voltage Vss and the anode voltage Vdd are constant voltages, when Vd changes, the channel voltage Va of the driving transistor 11a and the terminal voltage Ve of the EL element 15 change. Therefore, the current flowing through the EL element 15 can be changed by changing the Vd voltage. The change in the current of the EL element 15 changes the current flowing through the display screen 20. Therefore, the current flowing through the display screen 20 can be changed by changing the ON voltage.
- This disclosure changes the inter-channel voltage Vd of the switching transistor 11d by changing the ON voltage.
- the change in Vd is appropriately divided into the channel voltage Va of the driving transistor 11a and the terminal voltage Ve of the EL element 15.
- the voltage division is performed according to the characteristics of the driving transistor 11a and the EL element 15.
- the characteristics of the driving transistor 11 a and the EL element 15 vary within the display screen 20. Therefore, the occurrence of streak unevenness as when the anode voltage Vdd is reduced (changed) is reduced, and flicker is not generated.
- the ON voltage is detected based on the detected or measured current or data proportional to the current.
- the generation circuit 43 is controlled.
- the on-voltage generation circuit 43 changes the on-voltage so as to increase the inter-channel voltage Vd of the switching transistor 11d, and consequently suppresses the current flowing through the EL element 15.
- the present disclosure detects, for example, when the current flowing through the display screen 20 in the current detection circuit 41 decreases or when the current is smaller than a predetermined value, and detects or measures the on-voltage based on the detected current or data proportional to the current.
- the generation circuit 43 is controlled.
- the on-voltage generation circuit 43 is controlled so as to change the on-voltage so as to reduce the channel-to-channel voltage Vd of the switching transistor 11d, and as a result, increase the current flowing through the EL element 15 and emit light with higher peak luminance. To do.
- FIG. 16 shows an embodiment corresponding to another pixel configuration.
- the switching transistor 11d is a P-channel transistor, as in FIG. Therefore, the on-voltage is a negative voltage.
- the off voltage is a positive voltage.
- FIG. 16 is an explanatory diagram illustrating a pixel configuration in the EL display device according to the present disclosure.
- the gate signal line 17c is connected to the gate terminal of the switching transistor 11e, and controls on / off of the switching transistor 11e.
- the gate signal line 17a is connected to the gate terminal of the switching transistor 11b, and controls the on / off of the switching transistor 11b.
- the gate signal line 17d is connected to the gate terminal of the switching transistor 11c, and controls on / off of the switching transistor 11c.
- the gate signal line 17b is connected to the gate terminal of the switching transistor 11d, and controls the on / off of the switching transistor 11d.
- the gate signal lines 17a, 17b, and 17d are connected to the gate driver IC (circuit) 12a, and the gate signal line 17b is connected to the gate driver IC (circuit) 12b.
- the source terminal of the switching transistor 11c is connected to the drain terminal of the P-channel driving transistor 11a, and the anode terminal of the EL element 15 is connected to the drain terminal of the switching transistor 11c.
- a cathode voltage Vss is applied to the cathode terminal of the EL element 15.
- An anode voltage Vdd is applied to the source terminal of the driving transistor 11a.
- the switching transistor 11d When an on-voltage is applied to the gate signal line 17b, the switching transistor 11d is turned on, and the light emission current from the driving transistor 11a is supplied to the EL element 15.
- the EL element 15 emits light based on the magnitude of the light emission current.
- a source terminal and a drain terminal of the switching transistor 11c are connected between the gate terminal and the drain terminal of the driving transistor 11a, and an ON voltage is applied to the gate signal line 17d, whereby the gate terminal of the driving transistor 11a is connected to the gate terminal and the drain terminal. Short-circuit (connect) the drain terminals.
- One terminal of the capacitor 19b is connected to the gate terminal of the driving transistor 11a, and the other terminal of the capacitor is connected to the drain terminal of the switching transistor 11b.
- the source terminal of the switching transistor 11 b is connected to the source signal line 18.
- the switching transistor 11b When the ON voltage of the gate signal line 17a is applied, the switching transistor 11b is turned ON, and the video signal (voltage, current) Vs applied to the source signal line 18 is applied to the pixel 16.
- the video signal is a video signal voltage, but may be a video signal current.
- One terminal of the capacitor 19a is connected to the drain terminal of the switching transistor 11b, the other terminal is connected to the anode electrode (terminal), and the anode voltage Vdd is applied.
- the present invention is not limited to this.
- the present invention is not limited to this.
- Vb 5 (V)
- the drain terminal of the switching transistor 11e is connected to the drain terminal of the switching transistor 11b, and the source terminal of the switching transistor 11e is connected to the electrode or signal line to which the reset voltage Va is applied.
- the on-voltage is applied to the gate signal line 17c, the switching transistor 11e is turned on, and the reset voltage Va is applied to the capacitor 19a.
- the switch transistor 11c and the switch transistor 11e are P-channel and adopt an LDD structure.
- the switching transistors 11c and 11e are at least a double gate (dial gate) or more. This is more than a triple gate. That is, a structure in which the gates of a plurality of transistors are connected in series is employed.
- the off characteristics of the switching transistors 11c and 11e can be improved. Unless the off characteristics of the switching transistors 11c and 11e are improved, the charge of the capacitor 19a cannot be held well.
- transistors other than the switching transistors 11c and 11e also adopt the P channel and adopt the LDD structure. If necessary, the transistor has a multi-gate structure.
- the switch transistor 11 b applies the video signal output from the source driver IC (circuit) 14 to the gate terminal of the drive transistor 11 a of the pixel 16.
- the driving transistor 11a performs voltage-current conversion based on the applied video signal, and supplies the EL element 15 with a light emission current based on the video signal.
- the switch transistor 11d When the ON voltage applied to the gate terminal of the switch transistor 11d is lowered, the switch transistor 11d is in a strong ON state and operates in the saturation region. The voltage between the channels (source-drain) of the switching transistor 11d becomes low. Accordingly, a sufficient voltage is applied between the channels of the EL element 15 and the driving transistor 11a. Therefore, the constant current from the driving transistor 11 a is supplied to the EL element 15.
- the switch transistor 11d When the ON voltage applied to the gate terminal of the switch transistor 11d is increased, the switch transistor 11d has an increased ON resistance between channels (operates in a linear region). As the on-resistance between the channels (between the source and drain) of the switching transistor 11d increases, the channel-to-channel voltage increases. Therefore, it becomes difficult to apply a voltage to the EL element 15 between the channels of the driving transistor 11a. Therefore, the current supplied from the driving transistor 11a to the EL element 15 is suppressed.
- the inter-channel voltage Vd of the switching transistor 11d changes. Since the cathode voltage Vss and the anode voltage Vdd are constant voltages, when Vd changes, the channel voltage Va of the driving transistor 11a and the terminal voltage Ve of the EL element 15 change.
- the current flowing through the EL element 15 can be changed by changing the inter-channel voltage Vd of the switching transistor 11d.
- the change in the current of the EL element 15 changes the current flowing through the display screen 20. Therefore, the current flowing through the display screen 20 can be changed by changing the ON voltage.
- the switching transistor 11d shown in FIG. 16 is a P-channel transistor, the gate voltage ternary driving and the gate voltage binary driving are performed as shown in FIG.
- the polarities of the off voltages (Voff1, Voff2) are opposite to those in FIG.
- the detected or measured current or data proportional to the current is used.
- the on-voltage generating circuit 43 is controlled.
- Embodiment 2 will be described with reference to FIG.
- the current calculation circuit 191 processes (calculates) the input video signal to obtain the current Id flowing through the display screen 20 or data proportional to the current, and the on-voltage generation circuit 43 is determined based on these data. It is embodiment which controls.
- the current calculation circuit 191 corresponds to the current amount acquisition circuit according to this embodiment.
- the current flowing through the EL element 15 of the pixel 16 and the luminance have a linear (proportional) relationship. Therefore, the power consumption of the panel can be obtained by calculating the sum total of the video data.
- data based on the current flowing through the display screen 20 can be obtained by obtaining the sum of the video data and integrating the sum.
- EL element 15 has different luminous efficiency in RGB. Usually, the luminous efficiency of B is the worst. Next, G is bad. R has the best luminous efficiency. Therefore, the light emitting efficiency is weighted by a multiplier (not shown).
- the R multiplier multiplies the R image data (Rdata) by the R luminous efficiency.
- a G multiplier multiplies G image data (Gdata) by G luminous efficiency.
- a B multiplier multiplies B image data (Bdata) by B light emission efficiency.
- R red
- G green
- B blue
- an R multiplier multiplies the R image data (Rdata) by a factor of three.
- a G multiplier multiplies G image data (Gdata) by 6 times.
- a B multiplier multiplies the B image data (Bdata) by 1 time.
- Input data is RGB data (red is RDATA, green is GDATA, blue is BDATA), but is not limited to this. It may be YUV (luminance data and chromaticity data). In the case of YUV, weighting processing is performed by directly converting to Y (luminance) data or Y data and UV (chromaticity) data, or by converting into luminance data or the like in consideration of light emission efficiency with respect to chromaticity. Since other matters have been described with reference to FIG.
- the current may be measured or detected by the current detection circuit. Further, a value based on a current or the like may be obtained by a current calculation circuit. Further, the current or the like may be obtained by using both the current detection circuit and the current calculation circuit. In the embodiment of the present disclosure, the current is obtained. However, the present invention is not limited to this, and a value proportional to the current may be obtained. Further, a value based on the current or related to the current may be obtained. The current value includes a change in current or a rate of change in current. Therefore, it may be a current amount acquisition circuit.
- Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games) And an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as Digital Versatile Disc (DVD) and displaying the image).
- video cameras digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games)
- an image reproducing apparatus specifically, an apparatus having a display capable of reproducing a recording medium such as Digital Versatile Disc (DVD) and displaying the image).
- DVD Digital Versatile Disc
- FIG. 18 shows a display, which includes a casing 152, a holding base 153, and an EL display device (EL display panel) 151 of the present invention.
- the display shown in FIG. 18 has a function of displaying various kinds of information (still images, moving images, text images, etc.) on the display unit. Note that the function of the display illustrated in FIG. 18 is not limited thereto, and the display can have various functions.
- FIG. 19 shows a camera, which includes a shutter 161, a viewfinder 162, and a cursor 163.
- the camera shown in FIG. 19 has a function of taking a still image. Has a function to shoot movies. Note that the function of the camera illustrated in FIG. 19 is not limited thereto, and the camera can have various functions.
- FIG. 20 shows a computer, which includes a keyboard 171 and a touch pad 172.
- the computer illustrated in FIG. 20 has a function of displaying various types of information (still images, moving images, text images, and the like) on the display unit. Note that the functions of the computer illustrated in FIG. 20 are not limited thereto, and the computer can have various functions.
- the image quality of the above-described information devices in FIGS. 18 to 20 can be improved.
- the cost can be reduced.
- inspection and adjustment can be easily performed.
- This embodiment can be implemented in combination with any of the other embodiments as appropriate.
- each drawing may be omitted, enlarged, or reduced for easy understanding and drawing.
- the EL display device illustrated or described in the embodiment of the present disclosure may be adopted as the EL display device 151 of the notebook personal computer of FIG. 20, and an information device may be configured. Needless to say, you can.
- a touch panel or the like may be added to the EL display panel of the present disclosure shown in FIG. 2 to configure the information display device shown in FIGS. 18, 19, and 20.
- the EL display device is a concept including system devices such as information devices.
- the concept of the EL display panel broadly includes system equipment such as information equipment.
- the driving transistor 11a and the switching transistors 11b and 11d are described as thin film transistors, but the present invention is not limited thereto.
- a thin film diode (TFD), a ring diode, or the like can also be used.
- the transistor is not limited to a thin film element, and may be a transistor formed on a silicon wafer.
- a transistor formed of a silicon wafer, peeled off and transferred to a glass substrate is exemplified.
- a display panel in which a transistor chip is formed using a silicon wafer and a glass substrate is mounted by bonding is exemplified.
- the transistor 11 (the driving transistor 11a, the switching transistors 11b and 11d) may be an FET, a MOS-FET, a MOS transistor, or a bipolar transistor. These are also basically thin film transistors.
- varistors, thyristors, ring diodes, photodiodes, phototransistors, PLZT elements may be used.
- the transistor 11 (the driving transistor 11a and the switching transistors 11b and 11d) of the present disclosure preferably adopts an LDD (Lightly Doped Drain) structure for both N-channel and P-channel transistors.
- LDD Lightly Doped Drain
- the transistor 11 includes high temperature polysilicon (HTPS), low temperature polysilicon (LTPS), continuous grain silicon (CGS), and continuous grain silicon (CGS).
- HTPS high temperature polysilicon
- LTPS low temperature polysilicon
- CCS continuous grain silicon
- CCS continuous grain silicon
- TAOS Transparent Amorphous Oxide Semiconductors (IZO), Amorphous Silicon (AS), and Infrared RTA (RTA: Rapid thermal annealing) may be used.
- all the transistors constituting the pixel are configured by the P channel.
- the present disclosure is not limited to only configuring the pixel transistor 11 with a P-channel. You may comprise only N channel. Moreover, you may comprise using both N channel and P channel. Further, the driving transistor 11a may be configured using both a P-channel transistor and an N-channel transistor.
- the switching transistors 11b and 11d are not limited to transistors, and may be analog switches configured using both P-channel transistors and N-channel transistors, for example.
- the transistor 11 (the driving transistor 11a and the switching transistors 11b and 11d) preferably has a top gate structure.
- the parasitic capacitance is reduced, the gate electrode pattern of the top gate becomes a light shielding layer, and the light emitted from the EL element 15 is blocked by the light shielding layer, so that the malfunction of the transistor and the off-leakage current can be reduced. It is.
- the gate signal line 17 driven (controlled) by the gate driver IC (circuit) 12 has a low impedance. Therefore, the same applies to the configuration or structure of the gate signal line 17.
- low-temperature polysilicon Low-temperature polycrystalline silicon
- the transistor has a top gate structure and a small parasitic capacitance, so that N-channel and P-channel transistors can be manufactured, and a copper wiring or copper alloy wiring process can be used for the process.
- the copper wiring preferably employs a three-layer structure of Ti—Cu—Ti.
- the wiring preferably employs a three-layer structure of molybdenum (Mo) -Cu-Mo.
- the present disclosure can be used for an EL display device (EL display panel) and a driving method thereof.
- DVD Digital Versatile Disc
- Driving transistor TFT
- Second switch transistor 11b
- Gate driver IC circuit
- Source driver IC circuit 15
- On-voltage generation circuit 70
- Arithmetic circuit current amount acquisition circuit
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Abstract
Description
以下、本開示の詳細を説明する前に、本開示の基礎となった知見について説明する。
以下、図2~図12を用いて、実施の形態1に係るEL表示装置について説明する。
本開示にかかるEL表示装置は、EL素子の電流制御を、EL素子15に印加する駆動用トランジスタ11aとは別の制御トランジスタ(スイッチ用トランジスタ11d)で行うことを特徴とするものである。これはスイッチ用トランジスタ11dのゲートへ印加する電圧を変化させることでオン特性を制御し、駆動用トランジスタ11aを介してEL素子15の電流を制御する。これにより、駆動用トランジスタ11aの特性ムラによる表示品位低下を起こすことなくEL駆動電流を制御でき、EL画素回路全体の発熱を抑えて、発熱によるEL素子特性の劣化を防ぐことができるものである。
次に、本実施の形態に係るEL表示装置の動作(駆動方法)について説明する。
以上のように、本開示の一態様に係るEL表示装置は、図2に示すような画素16がマトリックス状に配置された表示画面を有するアクティブマトリックス型EL表示装置であって、EL素子がマトリックス状に配置された画素を有する表示画面と、複数の画素の行ごとに配置された、第1のゲート信号線及び第2のゲート信号線と、第1のゲート信号線及び第2のゲート信号線に制御電圧を出力するゲートドライバ回路と、表示画面のEL素子に電流を供給する電流発生回路と、複数の画素に流れる電流の大きさを求める電流検出手段と、ゲートドライバ回路が第1のゲート信号線に出力する制御電圧を発生する制御電圧発生回路とを具備し、複数の画素の各々は、発光素子と、発光素子に駆動電流を供給するための駆動用トランジスタと、第1のゲート信号線から供給される制御電圧に基づいて導通及び非導通が切り換えられ、駆動電流の経路上に配置された第1のスイッチ用トランジスタと、第2のゲート信号線から供給される制御電圧に基づいて導通及び非導通が切り換えられ、映像信号を駆動用トランジスタに印加するための第2のスイッチ用トランジスタとを備え、制御電圧は、第1のスイッチ用トランジスタを導通状態にする電圧であり、制御電圧発生回路は、電流検出回路の出力結果に基づき、制御電圧を可変することを特徴とするものである。
以下、図13~図15を用いて、実施の形態1の変形例1を説明する。
以下、図16を用いて、実施の形態1の変形例2を説明する。
以下、図17を用いて、実施の形態2を説明する。
上記実施の形態の各々の図で述べた内容(一部でもよい)を様々な電子機器に適用することができる。具体的には、電子機器の表示画面に適用することができる。
11b 第2のスイッチ用トランジスタ
11d 第1のスイッチ用トランジスタ
12a、12b ゲートドライバIC(回路)
14 ソースドライバIC(回路)
15 EL素子
16 画素
17a、17b、17c、17d ゲート信号線
18 ソース信号線
19a コンデンサ
20 表示画面
41 電流検出回路(電流量取得回路)
43 オン電圧発生回路
70 制御回路(制御電圧発生回路)
70a FB制御線
121 走査・出力バッファ回路
123 入力端子
131 切り替え回路
151 EL表示パネル(EL表示装置)
152 筐体
153 保持台
161 シャッター
162 ビューファインダ
163 カーソル
171 キーボード
172 タッチパッド
191 演算回路(電流量取得回路)
Claims (7)
- 複数の画素がマトリックス状に配置された表示画面と、
前記複数の画素の行ごとに配置された、第1のゲート信号線及び第2のゲート信号線と、
前記第1のゲート信号線及び前記第2のゲート信号線に、それぞれ第1の制御電圧及び第2の制御電圧を出力するゲートドライバ回路と、
前記表示画面の前記複数の画素に電流を供給する電流発生回路と、
前記複数の画素に流れる電流の大きさを求める電流量取得回路と、
前記ゲートドライバ回路が前記第1のゲート信号線に出力する前記第1の制御電圧を発生する制御電圧発生回路とを具備し、
前記複数の画素の各々は、
EL(Electro-Luminescence)素子と、
前記EL素子に駆動電流を供給するための駆動用トランジスタと、
前記第1のゲート信号線から供給される第1の制御電圧に基づいてチャンネル間電圧が調整され、前記駆動電流の経路上に配置された第1のスイッチ用トランジスタと、
前記第2のゲート信号線から供給される前記第2の制御電圧に基づいて導通及び非導通が切り換えられ、映像信号を前記駆動用トランジスタに印加するための第2のスイッチ用トランジスタとを備え、
制御電圧発生回路は、前記電流量取得回路の出力結果に基づき、前記第1の制御電圧の大きさを調整することを特徴とするEL表示装置。 - 前記電流量取得回路は、EL表示装置に入力される映像信号を演算することにより、前記表示画面に流れる電流を求めることを特徴とする請求項1記載のEL表示装置。
- 前記電流量取得回路は、前記電流発生回路から前記表示画面に流れる電流の大きさを検出することにより、前記表示画面に流れる電流を求めることを特徴とする請求項1記載のEL表示装置。
- 前記第2の制御電圧は、前記第2のスイッチ用トランジスタをオンさせるオン電圧と、前記第2のスイッチ用トランジスタをオフさせる複数のオフ電圧からなることを特徴とする請求項1記載のEL表示装置。
- 複数の画素がマトリックス状に配置された表示画面を有するEL表示装置の駆動方法であって、
前記画素には、EL素子と、前記EL素子に電流を供給する駆動用トランジスタと、前記EL素子に流れる電流の経路に配置されたスイッチ用トランジスタを具備し、
前記スイッチ用トランジスタのゲート端子に印加する電圧の値を制御することにより、前記電流の大きさを可変することを特徴とするEL表示装置の駆動方法。 - 前記電流量取得回路を具備し、EL表示装置に入力される映像信号を演算することにより、前記表示画面に流れる電流を求め、求めた電流に基づいて、前記スイッチ用トランジスタのゲート端子に印加する電圧を可変することを特徴とする請求項5記載のEL表示装置の駆動方法。
- 前記電流量取得回路を具備し、前記表示画面に流れる電流の大きさを検出することにより、前記スイッチ用トランジスタのゲート端子に印加する電圧を可変することを特徴とする請求項5記載のEL表示装置の駆動方法。
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JP2018103556A (ja) * | 2016-12-28 | 2018-07-05 | 京セラディスプレイ株式会社 | 発光装置 |
JP2021520508A (ja) * | 2018-05-09 | 2021-08-19 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | 画素回路及びその駆動方法、表示基板、表示装置 |
JP7343397B2 (ja) | 2018-05-09 | 2023-09-12 | 京東方科技集團股▲ふん▼有限公司 | 画素回路及びその駆動方法、表示基板、表示装置 |
KR20200093458A (ko) * | 2019-01-28 | 2020-08-05 | 애플 인크. | 산화물 트랜지스터 임계 전압을 보상하는 디스플레이들을 갖는 전자 디바이스들 |
JP2020118973A (ja) * | 2019-01-28 | 2020-08-06 | アップル インコーポレイテッドApple Inc. | 酸化物トランジスタの閾値電圧に対する補償を行うディスプレイを有する電子デバイス |
US11081053B2 (en) | 2019-01-28 | 2021-08-03 | Apple Inc. | Electronic devices having displays with compensation for oxide transistor threshold voltage |
KR102375599B1 (ko) * | 2019-01-28 | 2022-03-16 | 애플 인크. | 산화물 트랜지스터 임계 전압을 보상하는 디스플레이들을 갖는 전자 디바이스들 |
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US10460657B2 (en) | 2019-10-29 |
US20160372035A1 (en) | 2016-12-22 |
JPWO2015001709A1 (ja) | 2017-02-23 |
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