WO2014178252A1 - フィルム状接着剤、ダイシングテープ一体型フィルム状接着剤、及び、半導体装置の製造方法 - Google Patents
フィルム状接着剤、ダイシングテープ一体型フィルム状接着剤、及び、半導体装置の製造方法 Download PDFInfo
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- WO2014178252A1 WO2014178252A1 PCT/JP2014/059494 JP2014059494W WO2014178252A1 WO 2014178252 A1 WO2014178252 A1 WO 2014178252A1 JP 2014059494 W JP2014059494 W JP 2014059494W WO 2014178252 A1 WO2014178252 A1 WO 2014178252A1
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- film adhesive
- adhesive
- film
- dicing tape
- thermosetting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Definitions
- the present invention relates to a film adhesive, a dicing tape-integrated film adhesive, and a method for manufacturing a semiconductor device.
- a method of bonding a semiconductor element to a metal lead frame or the like has started from a conventional gold-silicon eutectic, and has changed to a method using solder and resin paste. At present, a method using a conductive resin paste is used.
- Patent Document 2 discloses a film-like film that is provided with flexibility by blending an acrylic acid copolymer having a glass transition temperature of ⁇ 10 to 50 ° C. in order to reduce thermal damage to semiconductor elements, lead frames, and the like.
- the adhesives are disclosed.
- an adhesive having heat resistance has long been desired.
- a power semiconductor device that controls and supplies electric power generally has a large amount of heat generation, so that an adhesive used for the power semiconductor device is required to have high heat resistance.
- the present inventors have intensively studied film adhesives for semiconductor devices. As a result, when the glass transition temperature (Tg) after curing is higher than the predetermined temperature, it was found that the glass has excellent heat resistance, and the present invention has been completed.
- Tg glass transition temperature
- the film adhesive for a semiconductor device according to the present invention is Including thermosetting resin, curing agent and conductive particles,
- the glass transition temperature after thermosetting is 130 ° C. or higher.
- the glass transition temperature after thermosetting is 130 ° C. or higher, it has heat resistance. Therefore, if it is used in a semiconductor device, it can withstand heat generation from a semiconductor element or the like. In addition, since the conductive particles are included, heat generated from the semiconductor element or the like can be efficiently discharged to the outside.
- the electrical resistivity at 25 ° C. after curing is preferably 1 ⁇ 10 ⁇ 2 ⁇ ⁇ m or less.
- the thermal conductivity is relatively high. As a result, heat from the semiconductor element or the like can be efficiently radiated to the outside. In particular, when used in a small and high-density semiconductor device, heat can be suitably radiated to the outside.
- the weight ratio (A) / (B) is 1 when the thermoplastic resin is included, the weight of the thermoplastic resin is A, and the total of the thermosetting resin and the curing agent is B. / 9 to 4/6 are preferable.
- the weight ratio (A) / (B) is 4/6 or less, the curing component is sufficient, and it becomes easy to increase the glass transition temperature after thermosetting.
- the weight ratio (A) / (B) is 1/9 or more, film formation becomes easy.
- the content of the conductive particles is preferably 30 to 95% by weight with respect to the entire film adhesive.
- the content of the conductive particles is 30% by weight or more with respect to the entire film adhesive, the thermal conductivity is easily increased. As a result, heat from the semiconductor element or the like can be efficiently radiated from the outside.
- the content of the conductive particles is 95% by weight or less based on the whole film adhesive, film formation is facilitated.
- the tensile storage modulus at 175 ° C. after thermosetting is preferably 50 to 1500 MPa.
- a semiconductor element etc. can be firmly adhere
- the storage elastic modulus at 175 ° C. after thermosetting is 1500 MPa, it has a certain degree of flexibility, can withstand thermal stress, and can be prevented from peeling off the adherend. .
- the shear adhesive strength with copper at 150 ° C. after being held at 0.5 MPa for 0.5 seconds at 150 ° C. is preferably in the range of 5 to 200 g / 25 mm 2 . Since the shear adhesive force is 5 g / 25 mm 2 or more, the semiconductor element can be sufficiently softened at 150 ° C. or lower when bonding the semiconductor element to the lead frame. As a result, it is possible to prevent the adherend such as the lead frame from being oxidized and achieve high adhesion to the adherend.
- the thickness is preferably in the range of 5 to 100 ⁇ m.
- the thickness is 5 ⁇ m or more, it is possible to prevent the occurrence of non-adhered portions even if chip warpage or the like occurs.
- the thickness is 100 ⁇ m or less, it is possible to prevent the film adhesive from excessively protruding and contaminating the pad or the like due to the load during die bonding.
- the dicing tape-integrated film adhesive of the present invention is a dicing tape in which a pressure-sensitive adhesive layer is laminated on a base material in order to solve the above problems, Having the film-like adhesive described above, The film adhesive is formed on the pressure-sensitive adhesive layer.
- the peeling force between the film adhesive and the dicing tape is within a range of 0.01 to 3.00 N / 20 mm under the conditions of peeling speed: 300 mm / min, peeling temperature: 25 ° C., and T peel. It is preferable that When the peeling force is 0.01 N / 20 mm or more, chip fly during dicing can be suppressed. Moreover, a pick-up can be made easy as the said peeling force is 3.00 N / 20mm or less.
- the manufacturing method of the semiconductor device of the present invention is a manufacturing method of a semiconductor device using the dicing tape-integrated film adhesive described above, Step A for attaching a semiconductor wafer to the film adhesive of the dicing tape-integrated film adhesive; Step B for dicing the semiconductor wafer together with the film adhesive; Step C for picking up a semiconductor element with a film adhesive obtained by dicing, After the semiconductor element with the film adhesive is brought into contact with the adherend, the film adhesive is held in the range of 50 to 150 ° C. for 0.01 to 2 seconds and in the range of 0.05 to 40 MPa. Step D to be performed After the step D, the method further comprises a step E of thermosetting the film adhesive.
- the film adhesive is kept in the range of 50 to 150 ° C. for 0.01 to 2 seconds, 0.05. Hold within the range of ⁇ 40 MPa (step D). Accordingly, when the semiconductor element is bonded to an adherend such as a lead frame, the film adhesive can be sufficiently softened and adhered at a temperature in the range of 50 to 150 ° C. Since the film adhesive is softened at a relatively low temperature of 150 ° C. or lower, the adherend (eg, lead frame) can be prevented from being oxidized. Then, the film adhesive is thermally cured (step E). Thus, a semiconductor device that can withstand heat generation can be obtained. Moreover, since the said film adhesive contains electroconductive particle, it becomes possible to discharge
- the film-like adhesive and the dicing tape-integrated film-like adhesive of the present invention when used in a semiconductor device, it can withstand the heat generated from the semiconductor elements and the like, and the heat generated from the semiconductor elements and the like can be generated. It is possible to efficiently discharge to the outside.
- a semiconductor device that can prevent the adherend from being oxidized and can withstand heat generation can be obtained. Further, heat generated from the semiconductor element or the like can be efficiently released to the outside.
- FIG. 1 is a schematic cross-sectional view of a dicing tape-integrated film adhesive according to an embodiment of the present invention.
- FIG. 2 is a schematic sectional view of a dicing tape-integrated film adhesive according to another embodiment of the present invention.
- the dicing tape-integrated film adhesive 10 has a configuration in which a film adhesive 3 is laminated on a dicing tape 11.
- the dicing tape 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the substrate 1, and the film adhesive 3 is provided on the pressure-sensitive adhesive layer 2.
- the present invention may be configured such that the film adhesive 3 ′ is formed only on a work (semiconductor wafer or the like) affixing portion, like the dicing tape-integrated film adhesive 12 shown in FIG. 2.
- the film adhesive 3 includes a thermosetting resin, a curing agent, and conductive particles, and has a glass transition temperature of 130 ° C. or higher after thermosetting.
- the glass transition temperature after the thermosetting is preferably 140 ° C. or higher.
- the glass transition temperature after the said thermosetting is so preferable that it is high, it is 300 degrees C or less, for example.
- the film adhesive 3 has heat resistance because the glass transition temperature after thermosetting is 130 ° C. or higher. Therefore, if it is used in a semiconductor device, it can withstand heat generation from a semiconductor element or the like.
- the conductive particles are included, heat generated from the semiconductor element or the like can be efficiently discharged to the outside.
- the glass transition temperature can be controlled by adjusting the blending ratio between the thermoplastic resin and the thermosetting resin or by adjusting the valence of the reactive functional group of the thermosetting resin such as epoxy resin. it can.
- the glass transition temperature after thermosetting means the glass transition temperature after heating at 140 degreeC for 1 hour, and also heating at 260 degreeC for 5 hours.
- the film adhesive 3 preferably has an electric resistivity at 25 ° C. of 1 ⁇ 10 ⁇ 2 ⁇ ⁇ m or less after thermosetting.
- the thermal conductivity is relatively high.
- heat from the semiconductor element or the like can be efficiently radiated to the outside.
- heat can be suitably radiated to the outside.
- the electrical resistivity at 25 ° C. after thermosetting means the electrical resistivity after heating at 140 ° C. for 1 hour and further heating at 260 ° C. for 5 hours.
- the film adhesive 3 preferably has a storage elastic modulus at 175 ° C. of 50 to 1500 MPa, more preferably 75 to 1200 MPa after thermosetting.
- a semiconductor element etc. can be firmly adhere
- the storage elastic modulus at 175 ° C. after thermosetting is 1500 MPa, it has a certain degree of flexibility, can withstand thermal stress, and can be prevented from peeling off the adherend.
- the storage elastic modulus at 175 ° C. after thermosetting means the storage elastic modulus at 175 ° C. after heating at 140 ° C. for 1 hour and further heating at 260 ° C. for 5 hours.
- the storage elastic modulus of the film adhesive 3 at 25 ° C. is preferably 5 MPa or more, and more preferably 2 ⁇ 10 2 MPa or more.
- Storage modulus at 25 ° C. of the film-like adhesive 3 is preferably 5 ⁇ 10 3 MPa or less, more preferably 3 ⁇ 10 3 MPa or less, more preferably 2.5 ⁇ 10 3 MPa or less.
- Exceeding 5 ⁇ 10 3 MPa is difficult in terms of formulation.
- the surface roughness (Ra) of the film adhesive 3 is preferably 0.1 to 1000 nm.
- the surface roughness is preferably 0.1 to 1000 nm.
- the low-temperature sticking property can be improved.
- the sticking property to the adherend at the time of die attachment can be improved. It is generally difficult to make the surface roughness 0.1 nm or more.
- the film-like adhesive 3 preferably has higher thermal conductivity at a measurement temperature of 25 ° C. after thermosetting, and is, for example, 0.5 W / m ⁇ K or more.
- the thermal conductivity is 0.5 W / m ⁇ K or more, the heat dissipation is good and it is possible to cope with small size and high density mounting.
- the thermal conductivity at a measurement temperature of 25 ° C. after thermosetting refers to the thermal conductivity at 25 ° C. after heating at 140 ° C. for 1 hour and further heating at 260 ° C. for 5 hours.
- the film adhesive 3 is preferably 0.2 N / 10 mm or more when the adhesive strength is measured at 25 ° C. after being attached to a wafer having a backside metal film at 70 ° C.
- the adhesion refers to a film obtained by vapor-depositing or plating a metal on the back surface of the wafer. Since the back surface metal film usually has a surface free energy smaller than that of a silicon wafer, the film adhesive 3 is difficult to stick.
- the measurement of the adhesion force is a value measured under conditions of a peeling angle of 180 degrees, a peeling temperature of 25 ° C., and a peeling speed of 300 mm / min.
- the film adhesive 3 preferably has a shear adhesive strength with copper at 150 ° C. after being held at 0.5 MPa for 0.5 seconds at 150 ° C. within a range of 5 to 200 g / 25 mm 2 . Since the shear adhesive force is 5 g / 25 mm 2 or more, the semiconductor element can be sufficiently softened at 150 ° C. or lower when bonding the semiconductor element to the lead frame. As a result, it is possible to prevent the adherend such as the lead frame from being oxidized and achieve high adhesion to the adherend.
- the method for measuring the shear adhesive force is according to the method described in the examples.
- the film adhesive 3 preferably contains a thermoplastic resin.
- Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity. Examples thereof include polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.
- the acrylic resin is not particularly limited, and one or more of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms, is used as a component. And a polymer (acrylic copolymer).
- alkyl group examples include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.
- the other monomer forming the polymer is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethyl cycle Hexyl) -hydroxyl group-containing monomers such as methyl acrylate, styrene sulfonic
- acrylic resins those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in the said numerical range.
- the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
- the glass transition temperature of the thermoplastic resin is preferably ⁇ 40 ° C. or higher, more preferably ⁇ 35 ° C. or higher, and further preferably ⁇ 25 ° C. or higher. Picking up can be facilitated by setting the glass transition temperature of the thermoplastic resin to ⁇ 40 ° C. or higher.
- the glass transition temperature of the thermoplastic resin is preferably ⁇ 10 ° C. or lower, more preferably ⁇ 11 ° C. or lower. By setting the glass transition temperature of the thermoplastic resin to ⁇ 10 ° C. or lower, it becomes easy to attach the film adhesive 3 to the semiconductor wafer at a low temperature of about 40 ° C.
- the glass transition temperature of a thermoplastic resin means the theoretical value calculated
- the film adhesive 3 contains a thermosetting resin as described above.
- thermosetting resin examples include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin.
- an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable.
- curing agent of an epoxy resin a phenol resin is preferable.
- the epoxy resin is not particularly limited.
- bisphenol A type bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac.
- Type orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc.
- bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type trisglycidyl isocyanurate type or glycidylamine type epoxy resin is used .
- novolac type epoxy resins novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.
- the phenol resin acts as a curing agent for the epoxy resin.
- a novolac type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol.
- resins and polyoxystyrenes such as polyparaoxystyrene.
- phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.
- the mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.
- the film adhesive 3 preferably contains a thermosetting resin that is solid at 25 ° C. and a thermosetting resin that is liquid at 25 ° C. Thereby, favorable low-temperature sticking property is obtained.
- the liquid state at 25 ° C. means that the viscosity at 25 ° C. is less than 5000 Pa ⁇ s.
- a solid at 25 ° C. means that the viscosity at 25 ° C. is 5000 Pa ⁇ s or more.
- the viscosity can be measured using a model number HAAKE Roto VISCO1 manufactured by Thermo Scientific.
- thermosetting resin solid at 25 ° C. (weight of thermosetting resin solid at 25 ° C.) / (Weight of thermosetting resin liquid at 25 ° C.) is preferably 49/51 to 10/90, 45 More preferred is / 55 to 40/60.
- the film-like adhesive 3 is formed at a low temperature of about 40 ° C. It becomes easy to stick to the wafer, and the low-temperature sticking property can be improved.
- the total content of the thermoplastic resin and the curable resin in the film adhesive 3 is preferably 5% by weight or more, more preferably 10% by weight or more with respect to the film adhesive 3 as a whole. When it is 5% by weight or more, it is easy to maintain the shape as a film. Further, the total content of the thermoplastic resin and the curable resin is preferably 70% by weight or less, more preferably 60% by weight or less, based on the entire film adhesive 3. When the content is 70% by weight or less, the conductive particles suitably exhibit conductivity.
- the weight ratio (A) / (B) is 1/9 to It is preferable to be within the range of 4/6.
- the weight ratio (A) / (B) is 4/6 or less, the curing component is sufficient, and it becomes easy to increase the glass transition temperature after thermosetting.
- the weight ratio (A) / (B) is 1/9 or more, film formation becomes easy.
- the film adhesive 3 includes conductive particles.
- the conductive particles are not particularly limited, and nickel particles, copper particles, silver particles, gold particles, aluminum particles, carbon black particles, carbon nanotubes that are fibrous particles, and particles in which the surfaces of core particles are coated with a conductive material. Etc.
- the core particles may be either conductive or non-conductive, and for example, glass particles can be used.
- the conductive material for covering the surface of the core particles metals such as nickel, copper, silver, gold, and aluminum can be used.
- the shape of the conductive particles is not particularly limited, and for example, flakes, needles, filaments, spheres, scales, etc. can be used. Among these, flakes are preferable in terms of improving dispersibility and filling rate.
- the average particle diameter of the conductive particles is not particularly limited, but is preferably 0.001 times or more (thickness of the film adhesive 3 ⁇ 0.001 or more) with respect to the thickness of the film adhesive 3, and 0.1 More than double is more preferable. By making it 0.001 times or more, it is easy to increase the thermal conductivity. As a result, heat from the semiconductor element or the like can be efficiently radiated from the outside. Further, the average particle diameter of the conductive particles is preferably 1 times or less (the thickness of the film adhesive 3 or less), more preferably 0.8 times or less the thickness of the film adhesive 3. By making it 1 times or less, chip cracking can be suppressed.
- the average particle diameter of the conductive particles is a value determined by a laser diffraction particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).
- the specific gravity of the conductive particles is preferably 0.7 or more, more preferably 1 or more. By setting it as 0.7 or more, it can suppress that electroconductive particle floats at the time of preparation of adhesive composition solution (varnish), and dispersion
- the specific gravity of the conductive particles is preferably 22 or less, and more preferably 21 or less. By setting the specific gravity to 22 or less, it is possible to prevent the conductive particles from sinking and the conductive particles from being non-uniformly dispersed.
- the content of the conductive particles in the film adhesive 3 is preferably 30% by weight or more, more preferably 40% by weight or more with respect to the entire film adhesive 3. Further, the content before the conductive particles is preferably 95% by weight or less, more preferably 94% by weight or less.
- the content of the conductive particles 30% by weight or more, it is easy to increase the thermal conductivity. As a result, heat from the semiconductor element or the like can be efficiently radiated from the outside.
- the content of the conductive particles is 95% by weight or less, film formation is facilitated.
- the film adhesive 3 may appropriately contain a compounding agent generally used in film production, for example, a crosslinking agent, in addition to the above components.
- the film adhesive 3 can be manufactured by a usual method. For example, an adhesive composition solution containing each of the above components is prepared, and the adhesive composition solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. Thereby, the film adhesive 3 can be manufactured.
- the solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading, or dispersing the components is preferable.
- organic solvent capable of uniformly dissolving, kneading, or dispersing the components.
- examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.
- a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.
- a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent
- Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating.
- the drying conditions for the coating film are not particularly limited, and for example, the drying can be performed at a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.
- the thickness of the film adhesive 3 is preferably 5 ⁇ m or more, and more preferably 15 ⁇ m or more.
- the thickness of the film adhesive 3 is preferably 100 ⁇ m or less, and more preferably 50 ⁇ m or less.
- the thickness of the film adhesive 3 is 5 ⁇ m or more, it is possible to prevent occurrence of a non-adhered portion even if chip warpage or the like occurs.
- the thickness of the film-like adhesive 3 is 100 ⁇ m or less, it is possible to suppress the film-like adhesive 3 from excessively protruding and contaminating the pad or the like due to a load during die bonding.
- the film adhesive 3 can be suitably used for manufacturing a semiconductor device. Especially, it can use especially suitably as a die attach film which adhere
- the film adhesive 3 is preferably integrated with a dicing tape and provided as a dicing tape-integrated film adhesive as in this embodiment.
- the film adhesive of the present invention may be provided as a single film adhesive without being attached to the dicing tape.
- a film-like adhesive can be made into the structure similar to a dicing tape integrated film-like adhesive by affixing on a dicing tape.
- the base material 1 is a strength matrix of the dicing tape-integrated film adhesives 10 and 12, and preferably has ultraviolet transparency.
- the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, and the like.
- polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, poly
- the surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to enhance adhesion and retention with adjacent layers.
- a physical treatment or a coating treatment with a primer for example, an adhesive substance described later can be performed.
- the thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 ⁇ m.
- the pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 2 is not particularly limited.
- a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive can be used.
- pressure-sensitive adhesives acrylic adhesives based on acrylic polymers are used as the base polymer from the standpoint of cleanability of electronic components that are difficult to contaminate such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. preferable.
- acrylic polymer examples include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, linear or
- (meth) acrylic acid cycloalkyl esters e.g., cyclopentyl ester, cyclohexyl ester, etc.
- (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.
- the acrylic polymer includes units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, as necessary, for the purpose of modifying cohesive strength, heat resistance, and the like. You may go out.
- Such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sti Contains sulfonic acid groups such as ethylene sulfonic acid, allyl s
- a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
- examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably
- the acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization.
- the polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.
- an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer.
- the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them.
- a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them.
- the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, with respect to 100 parts by weight of the base polymer.
- additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary,
- the pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive.
- the radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.
- a difference in adhesive strength with respect to the other part 2b can be provided by irradiating only the part 2a corresponding to the work pasting part of the pressure-sensitive adhesive layer 2 shown in FIG.
- the said part 2b currently formed with the uncured radiation-curing-type adhesive can adhere to the film adhesive 3, and can ensure the retention strength at the time of dicing.
- the portion 2 a having a significantly reduced adhesive force can be formed.
- the wafer ring can be fixed to the portion 2b formed of the uncured radiation curable adhesive.
- the portion 2a is irradiated with radiation so that the pressure-sensitive adhesive force of the portion 2a in the pressure-sensitive adhesive layer 2 ⁇ the pressure-sensitive adhesive strength of the other portion 2b. It is preferable.
- the radiation curable pressure-sensitive adhesive those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.
- the radiation curable pressure-sensitive adhesive include an addition-type radiation curable pressure-sensitive adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive. An agent can be illustrated.
- Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like.
- the radiation curable oligomer component examples include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable.
- the compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. In general, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
- the radiation-curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer.
- Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. It is preferable because an adhesive layer having a layered structure can be formed.
- the base polymer having a carbon-carbon double bond those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation.
- those having an acrylic polymer as a basic skeleton are preferable.
- the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
- the method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted.
- the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design.
- a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond.
- combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups.
- a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction.
- the functional group may be on either side of the acrylic polymer and the compound as long as the combination of these functional groups generates an acrylic polymer having the carbon-carbon double bond.
- it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group.
- examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
- acrylic polymer those obtained by copolymerizing the above-mentioned exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.
- the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics.
- Components and oligomer components can also be blended.
- the radiation-curable oligomer component is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
- the radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like.
- the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ '-dimethylacetophenone, 2-methyl-2-hydroxypropio ⁇ -ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalene
- the radiation-curable pressure-sensitive adhesive examples include photopolymerizability such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group, which are disclosed in JP-A-60-196956.
- photopolymerizability such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group, which are disclosed in JP-A-60-196956.
- examples thereof include rubber adhesives and acrylic adhesives containing a compound and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, or an onium salt compound.
- a compound that is colored by irradiation with radiation may be contained as necessary.
- a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation By including a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation, only the irradiated portion can be colored.
- the compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes.
- the use ratio of the compound colored by radiation irradiation can be set as appropriate.
- the thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 ⁇ m from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer.
- the thickness is preferably 2 to 30 ⁇ m, more preferably 5 to 25 ⁇ m.
- the film adhesives 3, 3 'of the dicing tape integrated film adhesives 10, 12 are preferably protected by a separator (not shown).
- the separator has a function as a protective material that protects the film adhesives 3, 3 'until they are put to practical use.
- the separator is peeled off when a workpiece is stuck on the film adhesives 3, 3 'of the dicing tape-integrated film adhesive.
- As the separator it is also possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent.
- the dicing tape-integrated film adhesives 10 and 12 can be manufactured by a usual method.
- the dicing tape integrated film adhesives 10 and 12 can be manufactured by bonding the pressure-sensitive adhesive layer 2 of the dicing tape 11 and the film adhesives 3 and 3 ′.
- the peeling force between the film adhesives 3 and 3 ′ and the dicing tape 11 is as follows: peeling speed: 300 mm / min, peeling temperature: 25 ° C., T peel It is preferably within the range of 0.01 to 3.00 N / 20 mm, and more preferably within the range of 0.02 to 2.00 N / 20 mm.
- peeling speed 300 mm / min
- peeling temperature 25 ° C.
- T peel It is preferably within the range of 0.01 to 3.00 N / 20 mm, and more preferably within the range of 0.02 to 2.00 N / 20 mm.
- the peeling force is 0.01 N / 20 mm or more, chip fly during dicing can be suppressed.
- a pick-up can be made easy as the said peeling force is 3.00 N / 20mm or less.
- Step A for attaching a semiconductor wafer to the film adhesive of the dicing tape-integrated film adhesive; Step B for dicing the semiconductor wafer together with the film adhesive; Step C for picking up a semiconductor element with a film adhesive obtained by dicing, After the semiconductor element with the film adhesive is brought into contact with the adherend, the film adhesive is held within a range of 0.05 to 40 MPa within a range of 50 to 150 ° C. for 0.01 to 2 seconds.
- Step D to be performed After the step D, at least a step E of thermosetting the film adhesive is provided.
- FIG. 3 is a diagram for explaining a method of manufacturing a semiconductor device according to the present invention.
- the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the film adhesive 3 in the dicing tape-integrated film adhesive 10, and this is bonded and held (fixing process, step A).
- This step is performed while pressing with a pressing means such as a pressure roll.
- a pressing means such as a pressure roll.
- the pressure bonding temperature is preferably 35 ° C. or higher, and more preferably 37 ° C. or higher.
- the upper limit of the pressure bonding temperature is preferably lower, preferably 50 ° C. or lower, more preferably 45 ° C. or lower, more preferably 43 ° C. or lower. Since it can be attached to the semiconductor wafer 4 at a low temperature of about 40 ° C., the thermal influence on the semiconductor wafer 4 can be prevented, and the warpage of the semiconductor wafer 4 can be suppressed.
- the pressure during the pressure bonding is preferably 1 ⁇ 10 5 to 1 ⁇ 10 7 Pa, and more preferably 2 ⁇ 10 5 to 8 ⁇ 10 6 Pa.
- the pressure bonding time is preferably 1 second to 5 minutes, and more preferably 1 minute to 3 minutes.
- the semiconductor wafer 4 is diced together with the film adhesive 3 (process B). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method, for example, from the circuit surface side of the semiconductor wafer 4. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape-integrated film adhesive 10 can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. In addition, since the semiconductor wafer 4 is bonded and fixed by the dicing tape-integrated film adhesive 10, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 4 can be suppressed.
- the semiconductor chip 5 is picked up (step C).
- the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing tape-integrated film adhesive 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device may be mentioned.
- the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the film adhesive 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 with the film adhesive 3 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5.
- Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.
- the picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 via the film adhesive 3 (die attach, process D).
- the film adhesive 3 is kept within the range of 50 to 150 ° C. (preferably within the range of 80 to 140 ° C.).
- the pressure is maintained within the range of 0.01 to 2 seconds (preferably 0.02 to 1.5 minutes) and 0.05 to 40 MPa (preferably 0.1 to 30 MPa).
- the film adhesive 3 can fully be softened and can be stuck. Since the film adhesive 3 is softened at a relatively low temperature of 150 ° C. or lower, oxidation of the adherend 6 can be prevented.
- thermosetting is preferably 100 ° C. or higher, more preferably 120 ° C. or higher.
- the heating temperature at the time of thermosetting is preferably 350 ° C. or lower, more preferably 300 ° C. or lower. When the heating temperature is in the above range, it can be bonded well.
- a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 is performed.
- the bonding wire 7 for example, a gold wire, an aluminum wire or a copper wire is used.
- the temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower.
- the heating time is several seconds to several minutes (for example, 1 second to 1 minute).
- the connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.
- a sealing process for sealing the semiconductor chip 5 with the sealing resin 8 is performed.
- This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6.
- This step is performed by molding a sealing resin with a mold.
- the sealing resin 8 for example, an epoxy resin is used.
- the heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.
- the sealing material may be further heated (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured.
- the heating temperature can be set as appropriate.
- Teisan resin SG-70L (acrylic copolymer, Mw: 900,000, glass transition temperature: ⁇ 13 ° C.): EOCN-1020-4 (epoxy resin solid at 25 ° C.) manufactured by Nagase ChemteX Corporation: Nippon Kayaku HP-4700 (epoxy resin solid at 25 ° C.) manufactured by: DIC HP-4032D (epoxy resin liquid at 25 ° C.): JER828 manufactured by DIC (epoxy resin liquid at 25 ° C.): Mitsubishi Chemical ( MEH-8000H (phenol resin as a curing agent) manufactured by Meiwa Kasei Co., Ltd.
- 1400YP conductive particles, copper powder, average particle size: 7 ⁇ m
- SPH02J conductive particles, silver manufactured by Mitsui Mining & Smelting Co., Ltd.
- TPP-K curing accelerator
- the obtained film adhesive was cut into a circle having a diameter of 230 mm and pasted on a pressure-sensitive adhesive layer of a dicing tape (P2130G manufactured by Nitto Denko Corporation) at 25 ° C. to produce a dicing tape integrated film adhesive. did.
- a silicon wafer manufactured by Shin-Etsu Chemical Co., Ltd., thickness 0.6 mm
- Ti titanium
- Ni nickel
- Ag silver
- the glass transition temperature was obtained by calculating the value of tan ⁇ (E ′′ (loss elastic modulus) / E ′ (storage elastic modulus)).
- Shear bond strength is the case in the range of 5 ⁇ 200g / 25mm 2 " ⁇ ", was evaluated in the case of out of the range of 5 ⁇ 200g / 25mm 2 as " ⁇ ". The results are shown in Table 2 together with the measured values.
- the die attach conditions were as follows: temperature: 150 ° C., holding time: 0.5 seconds, pressure: 0.5 MPa. Then, after hold
- Ten packages manufactured as described above were subjected to a thermal cycle test of 1000 cycles at a temperature of ⁇ 55 to 125 ° C. The test was conducted in accordance with JEDEC Standard 22-A104C Condition B. The package was observed with an ultrasonic microscope after the thermal cycle, and a case where even one chip was confirmed to be peeled was evaluated as x. The results are shown in Table 2.
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Abstract
Description
熱硬化性樹脂と硬化剤と導電性粒子を含み、
熱硬化後のガラス転移温度が130℃以上であることを特徴とする。
前記に記載のフィルム状接着剤とを有し、
前記フィルム状接着剤が前記粘着剤層上に形成されていることを特徴とする。
前記ダイシングテープ一体型フィルム状接着剤の前記フィルム状接着剤に半導体ウエハを貼り付ける工程Aと、
前記半導体ウエハを前記フィルム状接着剤とともにダイシングする工程Bと、
ダイシングにより得られたフィルム状接着剤付きの半導体素子をピックアップする工程Cと、
前記フィルム状接着剤付きの半導体素子を被着体に接触させた後、前記フィルム状接着剤を50~150℃の範囲内で0.01~2秒間、0.05~40MPaの範囲内で保持する工程Dと、
前記工程Dの後、前記フィルム状接着剤を熱硬化させる工程Eとを具備することを特徴とする半導体装置の製造方法。
また、本発明の半導体装置の製造方法によれば、被着体の酸化を防止することができ、且つ、発熱に耐え得る半導体装置とすることができる。また、半導体素子等からの発熱を、効率よく外部へと放出することが可能となる。
以下、本発明のダイシングテープ一体型フィルム状接着剤について説明する。図1は、本発明の一実施形態に係るダイシングテープ一体型フィルム状接着剤の断面模式図である。図2は、本発明の他の実施形態に係るダイシングテープ一体型フィルム状接着剤の断面模式図である。
なお、本明細書では、熱硬化後のガラス転移温度とは、140℃で1時間加熱し、さらに、260℃で5時間加熱した後のガラス転移温度をいう。
なお、本明細書では、熱硬化後の25℃での電気抵抗率とは140℃で1時間加熱し、さらに、260℃で5時間加熱した後の電気抵抗率をいう。
なお、本明細書では、熱硬化後の175℃での貯蔵弾性率とは、140℃で1時間加熱し、さらに、260℃で5時間加熱した後の175℃での貯蔵弾性率をいう。
なお、本明細書では、熱硬化後の測定温度25℃における熱伝導率とは、140℃で1時間加熱し、さらに、260℃で5時間加熱した後の25℃における熱伝導率をいう。
本実施形態に係る半導体装置の製造方法は、
前記ダイシングテープ一体型フィルム状接着剤の前記フィルム状接着剤に半導体ウエハを貼り付ける工程Aと、
前記半導体ウエハを前記フィルム状接着剤とともにダイシングする工程Bと、
ダイシングにより得られたフィルム状接着剤付きの半導体素子をピックアップする工程Cと、
前記フィルム状接着剤付きの半導体素子を被着体に接触させた後、前記フィルム状接着剤を50~150℃の範囲内で0.01~2秒間、0.05~40MPaの範囲内で保持する工程Dと、
前記工程Dの後、前記フィルム状接着剤を熱硬化させる工程Eとを少なくとも具備する。
テイサンレジンSG-70L(アクリル共重合体、Mw:90万、ガラス転移温度:-13℃):ナガセケムテックス(株)製
EOCN-1020-4(25℃で固体のエポキシ樹脂):日本化薬(株)製
HP-4700(25℃で固体のエポキシ樹脂):DIC社製
HP-4032D(25℃で液体のエポキシ樹脂):DIC社製
JER828(25℃で液体のエポキシ樹脂):三菱化学(株)製
MEH-8000H(硬化剤としてのフェノール樹脂):明和化成(株)社製
1400YP(導電性粒子、銅粉末、平均粒子径:7μm):三井金属鉱業社製
SPH02J(導電性粒子、銀粉末、平均粒子径:1μm):三井金属鉱業社製
TPP-K(硬化促進剤):北興化学社製
表1に記載の配合比に従い、表1に記載の各成分及び溶媒(メチルエチルケトン)を、ハイブリッドミキサー(キーエンス製 HM-500)の攪拌釜に入れ、攪拌モード、3分で攪拌・混合した。得られたワニスを、離型処理フィルム(三菱樹脂(株)製のMRA50)に塗布した後、乾燥させて、フィルム状接着剤を作製した。各フィルム状接着剤の厚さは表1の通りである。なお、表1には、熱可塑性樹脂の重量をA、熱硬化性樹脂と硬化剤との合計を重量をBとしたときの重量比率(A)/(B)、及び、フィルム状接着剤全体に対する導電性粒子の含有量(重量%)も示している。
フィルム状接着剤を厚みが500μmになるまでフィルム状接着剤を重ね合わせた。その後、140℃で1時間加熱し、さらに、260℃で5時間加熱して熱硬化させた。次に、長さ22.5mm(測定長さ)、幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAII、レオメトリックサイエンティフィック(株)製)を用いて、-50~300℃における貯蔵弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。その際の175℃での値を熱硬化後の175℃での貯蔵弾性率の測定値とした。更に、tanδ(E”(損失弾性率)/E’(貯蔵弾性率))の値を算出することによりガラス転移温度を得た。結果を表2に示す。
実施例、及び、比較例のフィルム状接着剤を140℃で1時間加熱し、さらに、260℃で5時間加熱して熱硬化させた。次に、回路素子測定器(日置電機株式会社、ミリオームハイテスタAC3560)を用いて、4端子法にて測定した。結果を表2に示す。
ダイシングテープ一体型フィルム状接着剤のフィルム状接着剤上に、保持目的にポリエステル粘着テープ(日東電工(株)製のBT-315)を貼り合わせた後、100mm×100mm幅で切断し、サンプルを作製した。このサンプルについて、剥離速度300mm/min、剥離温度25℃でTピールにてダイシングテープからフィルム状接着剤を剥離し、剥離力を測定した。結果を表2に示す。
実施例、及び、比較例のフィルム状接着剤を厚み500μm、5mm×5mmのシリコンに60℃で貼りあわせて、せん断接着力測定用チップを作製した。この測定用チップの接着剤面を銅板に150℃で0.5秒間、0.5MPa保持して貼り合わせた。銅板は、厚み200μmの銅板(JIS規格 C1020)を用いた。この測定用サンプルをせん断試験機(Dage社製、Dage4000)を用いて、フィルム状接着剤と銅とのせん断接着力を測定した。せん断試験の条件は、測定速度500μm/s、測定ギャップ100μm、ステージ温度150℃とした。せん断接着力が5~200g/25mm2の範囲内の場合を「○」、5~200g/25mm2の範囲外の場合を「×」として評価した。測定値とともに結果を表2に示す。
上記にて作製したダイシングテープ一体型フィルム状接着剤のフィルム状接着剤面に、上記にて作製した裏面金属膜付きのウエハの金属膜を貼り合わせた。貼り合わせは、ウエハマウンター(日東精機製)MA-3000IIIを用い、貼り付け速度10mm/min、貼り付け温度70℃にて行なった。次に、ダイシングマシンでダイシングを行い、5×5mmのフィルム状接着剤付きチップを得た。その後、ダイボンダーで銅製のリードフレーム(大日本印刷社製、製品名:QFN32,64)にダイアタッチした。ダイアタッチ条件は、温度:150℃、保持時間:0.5秒間、圧力:0.5MPaとした。その後、140℃で1時間保持した後、260℃で5時間加熱してフィルム状接着剤を熱硬化させた。その後、封止樹脂((日立化成(株)製、GE7470)で封止し、175℃で5時間加熱して封止樹脂を硬化させた。その後、8×8mmに切断し、パッケージを得た。
上記にて作製したパッケージ10個を温度:-55~125℃にて1000サイクルの熱サイクル試験を行なった。試験は、JEDEC規格 22-A104C 条件B に準拠して行なった。
熱サイクル後にパッケージを超音波顕微鏡にて観察し、チップの剥離が1個でも確認された場合を×、10個全てで剥離が確認されなかった場合を○として評価した。結果を表2に示す。
2 粘着剤層
3、3’ フィルム状接着剤
4 半導体ウエハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
10、12 ダイシングテープ一体型フィルム状接着剤
11 ダイシングテープ
Claims (10)
- 熱硬化性樹脂と硬化剤と導電性粒子を含み、
熱硬化後のガラス転移温度が130℃以上であることを特徴とする半導体装置用のフィルム状接着剤。 - 熱硬化後の25℃での電気抵抗率が、1×10-2Ω・m以下であることを特徴とする請求項1に記載のフィルム状接着剤。
- 熱可塑性樹脂を含み、
前記熱可塑性樹脂の重量をA、前記熱硬化性樹脂と前記硬化剤との合計を重量をBとしたとき、重量比率(A)/(B)が1/9~4/6の範囲内であることを特徴とする請求項1又は2に記載のフィルム状接着剤。 - 前記導電性粒子の含有量が、フィルム状接着剤全体に対して、30~95重量%であることを特徴とする請求項1~3のいずれか1に記載のフィルム状接着剤。
- 熱硬化後の175℃での引張貯蔵弾性率が50~1500MPaであることを特徴とする請求項1~4のいずれか1に記載のフィルム状接着剤。
- 150℃で0.5秒間、0.5MPaで保持した後の150℃での銅とのせん断接着力が、5~200g/25mm2の範囲内であることを特徴とする請求項1~5のいずれか1に記載のフィルム状接着剤。
- 厚さが、5~100μmの範囲内であることを特徴とする請求項1~6のいずれか1に記載のフィルム状接着剤。
- 基材上に粘着剤層が積層されたダイシングテープと、
請求項1~7のいずれか1に記載のフィルム状接着剤とを有し、
前記フィルム状接着剤が前記粘着剤層上に形成されていることを特徴とするダイシングテープ一体型フィルム状接着剤。 - 前記フィルム状接着剤と前記ダイシングテープとの剥離力が、剥離速度:300mm/min、剥離温度:25℃、Tピールの条件で、0.01~3.00N/20mmの範囲内であることを特徴とする請求項8に記載のダイシングテープ一体型フィルム状接着剤。
- 請求項8又は9に記載のダイシングテープ一体型フィルム状接着剤を用いた半導体装置の製造方法であって、
前記ダイシングテープ一体型フィルム状接着剤の前記フィルム状接着剤に半導体ウエハを貼り付ける工程Aと、
前記半導体ウエハを前記フィルム状接着剤とともにダイシングする工程Bと、
ダイシングにより得られたフィルム状接着剤付きの半導体素子をピックアップする工程Cと、
前記フィルム状接着剤付きの半導体素子を被着体に接触させた後、前記フィルム状接着剤を50~150℃の範囲内で0.01~2秒間、0.05~40MPaの範囲内で保持する工程Dと、
前記工程Dの後、前記フィルム状接着剤を熱硬化させる工程Eとを具備することを特徴とする半導体装置の製造方法。
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WO2015105028A1 (ja) * | 2014-01-08 | 2015-07-16 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
WO2015104986A1 (ja) * | 2014-01-08 | 2015-07-16 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
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KR20160004270A (ko) | 2016-01-12 |
TW201444940A (zh) | 2014-12-01 |
CN105164796A (zh) | 2015-12-16 |
KR102212774B1 (ko) | 2021-02-05 |
TWI627252B (zh) | 2018-06-21 |
CN111500212A (zh) | 2020-08-07 |
JP6033734B2 (ja) | 2016-11-30 |
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