WO2014156714A1 - 面発光素子 - Google Patents
面発光素子 Download PDFInfo
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- WO2014156714A1 WO2014156714A1 PCT/JP2014/056855 JP2014056855W WO2014156714A1 WO 2014156714 A1 WO2014156714 A1 WO 2014156714A1 JP 2014056855 W JP2014056855 W JP 2014056855W WO 2014156714 A1 WO2014156714 A1 WO 2014156714A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
Definitions
- the present invention relates to the structure of a surface light emitting device.
- a surface light emitting element As a new light source, a surface light emitting element can be mentioned. In the surface light emitting element, optimization of the structure of the surface light emitting element is being studied in order to improve the light extraction efficiency.
- plasmon loss caused by the proximity of the light emitting layer and the metal electrode.
- the plasmon loss can be reduced by moving the light emitting layer and the metal electrode away from each other.
- Plasmon loss can also be reduced by adopting a structure in which an organic functional layer (for example, an electron transport layer) is thickened or a structure in which a transparent electrode is sandwiched between a light emitting layer and a metal electrode.
- a diffraction grating and a scattering layer are provided to extract light.
- Patent Document 1 discloses an organic EL element structure in which a light scattering layer having a high refractive index is provided on the light extraction side of a transparent electrode.
- Patent Document 2 discloses a high light extraction type organic light emitting diode device in which transparent electrodes are arranged above and below a light emitting layer, and a light scattering layer is provided between the transparent electrode on the light extraction side and the substrate. The structure of is disclosed.
- An object of the present invention is to provide a surface light emitting device having a structure that can further improve the light extraction efficiency.
- a surface light emitting device reflecting one aspect of the present invention is provided with a light emitting layer that generates light and a light extraction side of the light emitting layer.
- a negative conductive material is used.
- FIG. 3 is a cross-sectional view showing the structure of the surface light emitting element in the first embodiment. It is a figure which shows the change of the electric field amplitude at the time of changing the distance of the light emission center point and metal cathode in the surface emitting element of related art 1. It is a figure which shows the change of the electric field amplitude at the time of changing the distance of the light emission center point in the surface light emitting element of Embodiment 1, and a metal cathode.
- FIG. 1 It is a figure which shows the change of the electric field amplitude of the related technique 1 and Embodiment 1 in case the distance of a light emission center point and a metal cathode is 115 nm. It is a figure which shows the change of the electric field amplitude of the related technique 1 and Embodiment 1 in case the distance of a light emission center point and a metal cathode is 215 nm. It is the elements on larger scale around the light emission center point of FIG. It is a figure which shows the coupling efficiency of the relative electric field amplitude and plasmon mode in the light emission center point of the related technology 1 and Embodiment 1.
- FIG. 6 is a cross-sectional view showing a structure of a surface light emitting element in a second embodiment.
- FIG. 6 is a cross-sectional view illustrating a structure of a surface light emitting element in a third embodiment. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 4.
- FIG. 10 is a cross-sectional view illustrating a structure of a surface light emitting element in a fifth embodiment. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 6.
- FIG. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 7.
- FIG. FIG. 10 is a cross-sectional view illustrating a structure of a surface light emitting element in an eighth embodiment.
- FIG. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 9.
- FIG. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 10.
- FIG. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 11.
- FIG. It is sectional drawing which shows the structure of the surface emitting element in Embodiment 12.
- Embodiment 14 It is a figure which shows the light extraction efficiency of the surface emitting element in related technology 1, 2 and Embodiment 1-14.
- FIG. 1 is a cross-sectional view showing a structure of a surface light emitting element 1a in Related Art 1.
- the surface light emitting element 1a has a rectangular shape in a plan view, and a light emitting layer 15 that generates light, and a light emitting layer 15 on one surface of the light emitting layer 15 (light extraction side: upper side in the drawing).
- the hole transport layer 14, the first electrode layer (transparent anode) 13, the light scattering layer 12, and the transparent substrate 11 capable of passing the light generated from are stacked in this order.
- the electron transport layer 16 and the metal cathode layer (reflecting electrode) 17 are laminated in this order on the other side of the light emitting layer 15 (the side where light is not extracted: the lower side of the figure).
- the transparent substrate 11 serves as a base material on which the above-described various layers are formed on the main surface, and is made of an insulating member that transmits light in the visible light region satisfactorily.
- the transparent substrate 11 may be a rigid substrate or a flexible substrate.
- the transparent substrate 11 is composed of, for example, a glass substrate, a plastic plate, a polymer film, a silicon plate, or a laminated plate thereof from the above-described light-transmitting viewpoint.
- a glass substrate having a thickness of about 5 mm was used.
- the light scattering layer 12 is composed of an insulating film that transmits light in the visible light region and has a function of scattering part of the light.
- the light scattering layer 12 may have a higher refractive index than the transparent substrate 11.
- the first electrode layer (transparent anode) 13 is composed of a film that transmits light in the visible light region and exhibits good electrical conductivity.
- the first electrode layer (transparent anode) 13 for example, an ITO (mixture of indium oxide and tin oxide) film, an IZO (mixture of indium oxide and zinc oxide film) film, Inorganic conductive film such as ZnO film, CuI, SnO2 film, organic conductive film such as PEDOT / PSS (polyethylenedioxythiophene and polystyrene sulfonic acid) film, silver nanowire, carbon nanotube, etc. are dispersed in polymer material Composed of a composite conductive film or the like.
- the thickness is, for example, approximately 100 nm.
- the hole transport layer 14 transports holes from the first electrode layer (transparent anode) 13 to the light emitting layer 15.
- a hole transport material in the hole transport layer 14 for example, a triazole derivative, an oxadiazole derivative, or the like can be used.
- the layer thickness is about 40 nm.
- the light emitting layer 15 is an organic electroluminescent layer, and includes at least a light emitting layer made of a fluorescent light emitting compound or a phosphorescent light emitting compound, and is composed of a film that transmits light in the visible light region satisfactorily.
- the ratio n 1.8
- the thickness of about 30 nm can be suitably used.
- an organic metal complex may be used from the viewpoint of improving the external quantum efficiency of the surface light emitting element 1a, extending the light emission lifetime, and the like.
- the metal element involved in the formation of the complex is preferably any one metal belonging to Group VIII, Group IX, and Group X of the periodic table of elements, Al, Zn, and particularly Ir, Pt, Al, Zn is preferable.
- the electron transport layer 16 has a function of transporting electrons injected from the metal cathode layer 17 to the light emitting layer 15.
- an electron transport material in the electron transport layer 16 for example, a nitro-substituted fluorene derivative or a diphenylquinone derivative can be used.
- the thickness is, for example, about 40 nm to 200 nm.
- the metal cathode layer 17 can use, for example, one or more metal elements selected from Al, Ag, In, Ti, Cu, Au, Mg, Mo, W, and Pt.
- metal elements selected from Al, Ag, In, Ti, Cu, Au, Mg, Mo, W, and Pt.
- Al is used, and its thickness is, for example, about 100 nm.
- the light generated by the light emitting layer has an air mode that exits into the air, a substrate mode that is confined by the total reflection of the transparent substrate and air, a waveguide mode that is confined by the transparent anode and / or the light emitting layer, and a waveguide mode.
- a plasmon mode localized particularly in the metal cathode layer.
- the light that can actually be used is the light extracted into the air.
- the light in the substrate mode is partially extracted into the air by multiple reflection between the transparent substrate 11 and the metal cathode layer 17 by attaching a light extraction sheet to the air side surface of the transparent substrate 11. Waveguide mode and plasmon mode light cannot be used.
- the typical ratio of each mode is 20% for air mode, 30% for substrate mode, 10% for waveguide mode, and 40% for plasmon mode. Even if the light extraction sheet is used, light in the waveguide mode and the plasmon mode cannot be extracted.
- the cause of the plasmon mode is that the light emitting point in the light emitting layer 15 (the central position of the light emitting layer 15 in the thickness direction) is close to the metal cathode layer 17. Plasmon mode can be reduced by increasing the distance between the light emitting point and the surface of the metal cathode layer 17.
- the surface light emitting device it is possible to increase the distance between the light emitting point and the surface of the metal cathode layer by sufficiently increasing the thickness of the electron transport layer between the light emitting layer and the metal cathode layer.
- the thickness of the electron transport layer is excessively increased, the electrical characteristics (resistance and carrier balance) of the electron transport layer are deteriorated.
- FIG. 2 shows a surface light emitting element 2a according to Related Technique 2. Similar to the structure of the surface light emitting element 1a, the surface light emitting element 2a includes a light emitting layer 25 that generates light, and a light emitting layer on one surface of the light emitting layer 25 (light extraction side: upper side in the drawing). A hole transport layer 24 capable of passing light generated from 25, a first electrode layer (transparent anode) 23, a light scattering layer 22, and a transparent substrate 21 are laminated in this order.
- the electron transport layer 26, the transparent cathode layer 27, and the light reflecting metal layer 28 are laminated in this order on the other side of the light emitting layer 25 (the side where light is not extracted: the lower side of the figure).
- the transparent cathode layer 27 is provided to increase the distance between the light emitting point and the surface of the light reflecting metal layer 28. Similar to the first electrode layer (transparent anode) 23, the transparent cathode layer 27 is composed of a film that transmits light in the visible light region and exhibits good electrical conductivity.
- the transparent cathode layer 27 examples include inorganic films such as an ITO (mixture of indium oxide and tin oxide) film, an IZO (mixture of indium oxide and zinc oxide film) film, a ZnO film, a CuI film, and a SnO2 film. Consists of conductive films, organic conductive films such as PEDOT / PSS (polyethylenedioxythiophene and polystyrene sulfonic acid) films, composite conductive films in which silver nanowires, carbon nanotubes, etc. are dispersed in a polymer material .
- the thickness is set to about 50 nm, for example. If the transparent cathode layer 27 is also thickened, light material absorption cannot be ignored. Therefore, a laminated structure with the first electrode layer (transparent anode) 23 is preferable.
- the light reflecting metal layer 28 is composed of a metal film (for example, a thickness of about 100 nm) made of, for example, Al, Ag, Ni, Ti, Na, Ca, or an alloy containing any of these.
- the light scattering layer 22 is placed close to the first electrode layer (transparent anode) 23 on the light extraction side, so that the guided mode light guided by the first electrode layer (transparent anode) 23, the light emitting layer 25, and the like can be obtained. There is an effect of scattering to the transparent substrate 21 and scattering light of the substrate mode to the air.
- the coupling strength to the plasmon mode is the electric field at the light emitting point position of the electric field distribution of the plasmon mode. Closely related to strength.
- the plasmon mode has a distribution that has the maximum intensity on the metal surface and exponentially attenuates to the transparent substrate through the light emitting layer. If the electric field intensity at the light emitting point can be reduced, the coupling to the plasmon mode can be reduced.
- FIG. 3 is a cross-sectional view showing the structure of the surface light emitting element 3a in the first embodiment.
- the surface light emitting element 3a has the same basic configuration (material, layer thickness) as the surface light emitting element 1a in the related art 1 shown in FIG.
- On one side (light extraction side: upper side in the figure), a hole transport layer 34 capable of passing light generated from the light emitting layer 35, a first electrode layer (transparent anode) 33, a light scattering layer 32,
- the transparent substrate 31 is laminated in this order.
- An electron transport layer 36 and a metal cathode layer (reflecting electrode) 37 are laminated in this order on the other side of the light emitting layer 35 (the side from which light is not extracted: the lower side of the figure).
- the difference from Related Technology 1 is that a thin silver layer (Ag, thickness 8 nm) is used for the first electrode layer (transparent anode) 33.
- the electric field distribution has a discontinuous shape at first glance. This is a boundary condition determined from the Maxwell equation, and the electric field distribution has a dependence opposite to the exponential decrease in the thin silver layer in which the real part of the complex dielectric constant is negative. Due to this dependence, the electric field intensity near the light emitting point is reduced.
- the negative absolute value of the real part of the complex dielectric constant of the thin silver layer should be large.
- a distance D2 from the light emitting point (center position in the thickness direction of the light emitting layer 35; hereinafter the same) to the surface of the first electrode layer (transparent anode) 33 and a distance D1 from the light emitting point to the surface of the metal cathode layer 37 are the same, the electric field strength at the light emitting point is necessarily small. This is synonymous with a decrease in the coupling efficiency to the plasmon mode, and it is possible to reduce the factor of the maximum decrease in light extraction efficiency.
- the light scattering layer 32 By forming the light scattering layer 32 so as to be adjacent to the first electrode layer (transparent anode) 33, it becomes possible to convert the waveguide mode to the substrate mode and to convert the substrate mode to the air mode. It is possible to improve the typical light extraction efficiency.
- the waveguide mode is a condition in which the mode itself cannot exist if the layer thickness of the high refractive index is sufficiently thin (approximately 1/4 or less of the wavelength). If a thin silver layer is used instead of ITO for the first electrode layer (transparent anode) 33 and the organic layer is thin, the waveguide mode cannot exist.
- the conversion of the waveguide mode into the substrate mode by the high refractive index scattering layer cannot be entirely converted into the substrate mode because the propagation distance of the waveguide mode (propagation distance where the intensity becomes 1 / e) is finite. Its efficiency is about 30 to 70%, and the refractive index of the high refractive index layer is high (light emitting layer constituting the waveguide mode, charge transport layer (electron transport layer 36, hole transport layer 34), ITO) The closer it is, the higher the efficiency.
- the efficiency of converting the substrate mode to the air mode but the higher the refractive index of the high refractive index scattering layer, the higher the ratio of being trapped in the high refractive index scattering layer under the total reflection condition. The lower the refractive index, the better.
- the high refractive index scattering layer has a function of converting the waveguide mode to the substrate mode and converting the substrate mode to the air mode. It is desirable that the refractive index is not too high.
- the first electrode layer (transparent anode) 33 is composed of silver (Ag) or an alloy mainly composed of silver (Ag).
- the alloy mainly containing silver (Ag) include silver magnesium (AgMg), silver copper (AgCu), silver palladium (AgPd), silver palladium copper (AgPdCu), and silver indium (AgIn).
- a structure in which silver or a layer of silver-based alloy is divided into a plurality of layers as necessary may be employed. Each of these materials is a conductive material in which the real part of the complex dielectric constant is negative, like silver.
- FIG. 4 is a diagram showing the electric field amplitude when the distance from the light emitting point to the surface of the metal cathode layer 17 is changed in the surface light emitting element 1a of the related art 1.
- the horizontal axis represents the distance from the light emitting point, and the transparent substrate 11 exists on the right side. As the distance to the transparent substrate 11 is increased (55 nm, 75 nm, 95 nm, 115 nm, and 215 nm), the electric field amplitude at the light emitting point decreases.
- FIG. 5 is a diagram showing the electric field amplitude when the distance from the light emitting point to the surface of the metal cathode layer 37 is changed in the surface light emitting element 3a in the first embodiment.
- the horizontal axis represents the distance from the light emitting point, and the transparent substrate 11 exists on the right side. As the distance to the transparent substrate 11 is increased (55 nm, 75 nm, 95 nm, 115 nm, and 215 nm), the electric field amplitude at the light emitting point decreases.
- the electric field amplitude in the vicinity of the light emitting point is decreased in all cases.
- the distances between the light emitting point and the surface of the metal cathode layer 37 are 55 nm (FIG. 6), 75 nm (FIG. 7), 95 nm (FIG. 8), 115 nm (FIG. 9), and 215 nm (FIG. 10).
- 3 is a graph comparing electric field amplitudes in the case of the surface light emitting element 1a in the related art 1 and in the case of the surface light emitting element 3a in the first embodiment. In all cases, the electric field amplitude at the light emitting point is the embodiment. 1, the surface light emitting element 3a is reduced.
- FIG. 11 obtained by enlarging FIG. 10 also shows the real part of the complex dielectric constant of the first electrode layer (transparent anode) 33 using the surface light emitting element 3a in the first embodiment.
- a first electrode layer (transparent anode) 33 exists in the vicinity of 60 nm from the light emitting point toward the transparent substrate 31. Since the real part of the complex dielectric constant of thin silver is large and negative, the electric field distribution existing in the thin silver increases in strength in the direction of the transparent substrate 31 contrary to the surroundings. Therefore, the overall mode shape becomes a discontinuous shape so as to lower the electric field distribution of the light emitting point in the vicinity of the first electrode layer (transparent anode) 33.
- FIG. 12 is a graph showing the coupling efficiency between the electric field amplitude at the light emitting point and the plasmon mode. It can be seen that when the distance between the light emitting point and the metal cathode layer 37 is increased, the electric field amplitude at the light emitting point decreases and the coupling efficiency with the plasmon mode decreases. However, in all the areas, the surface light emitting element 3a in the first embodiment can further reduce the radio wave amplitude and reduce the coupling efficiency to the plasmon mode compared to the related technique 1.
- ⁇ is the wavelength of light in a vacuum.
- the first electrode layer (transparent anode) 33 made of the metal thin film it is desirable that the first electrode layer (transparent anode) be thinner than Ld represented by the above formula (2).
- the thickness is preferably about 8 nm.
- FIG. 13 is a cross-sectional view showing the structure of the surface light emitting element 4a in the second embodiment.
- the surface light emitting element 4a has the same basic configuration (material, layer thickness) as the surface light emitting element 3a in the first embodiment shown in FIG.
- a hole transport layer 44, a first electrode layer (transparent anode) 43, and a light scattering layer 42 through which light generated from the light emitting layer 45 can pass are provided on one side of the light (light extraction side: upper side in the figure).
- the transparent substrate 41 are laminated in this order.
- An electron transport layer 46 and a metal cathode layer (reflective electrode) 47 are laminated in this order on the other side of the light emitting layer 45 (the side where light is not extracted: the lower side of the figure).
- a base layer 49 is provided between the first electrode layer (transparent anode) 43 and the light scattering layer 42.
- the underlayer 49 the same material as the charge transport layer, an organic material such as polyethylene naphthalate, or an inorganic material such as SiOX can be used.
- the thickness is, for example, about 30 nm.
- the refractive index before and after the first electrode layer (transparent anode) 43 is also determined. Design becomes possible. Furthermore, it is desirable to use an appropriate underlayer in order to form the first electrode layer (transparent anode) 43 without unevenness in the manufacturing process, and the characteristics of the first electrode layer (transparent anode) 43 as a transparent anode. Can be further improved.
- FIG. 14 is a cross-sectional view showing the structure of the surface light emitting element 5a in the third embodiment.
- the surface light emitting element 5a has the same basic configuration (material, layer thickness) as the surface light emitting element 2a in the related art 2 shown in FIG.
- a hole transport layer 54 capable of passing light generated from the light emitting layer 55, a first electrode layer (transparent anode) 53, a light scattering layer 52,
- the transparent substrate 51 is laminated in this order.
- the electron transport layer 56, the transparent cathode layer 57, and the light reflecting metal layer 58 are laminated in this order on the other side of the light emitting layer 55 (the side where light is not extracted: the lower side of the figure).
- the difference from Related Technology 2 is that a thin silver layer (Ag, thickness 8 nm) is used for the first electrode layer (transparent anode) 53. Plasmon loss can be reduced by using a thin silver layer for the first electrode layer (transparent anode) of the surface light emitting element 2a of Related Art 2. In the surface light emitting element 5a, it is possible to achieve a better balance between the advantages and disadvantages of electrical characteristics and optical characteristics.
- FIG. 15 is a cross-sectional view showing the structure of the surface light emitting element 6a in the fourth embodiment.
- the basic structure (material, layer thickness) of this surface light emitting element 6a is the same as that of the surface light emitting element 5a in the third embodiment shown in FIG. 14, and a light emitting layer 65 for generating light, and the light emitting layer 65
- a hole transport layer 64 capable of passing light generated from the light emitting layer 65, a first electrode layer (transparent anode) 63, and a light scattering layer 62 are provided.
- the transparent substrate 61 are laminated in this order.
- the electron transport layer 66, the transparent cathode layer 67, and the light reflecting metal layer 68 are laminated in this order on the other side of the light emitting layer 65 (the side from which light is not extracted: the lower side of the figure).
- a base layer 69 is provided between the first electrode layer (transparent anode) 63 and the light scattering layer 62.
- the material and layer thickness of the underlayer 69 are the same as those of the underlayer 49 in the second embodiment.
- FIG. 16 is a cross-sectional view illustrating the structure of the surface light emitting element 7a according to the fifth embodiment.
- the basic configuration (material, layer thickness) of the surface light emitting element 7a is the same as that of the surface light emitting element 3a in the first embodiment shown in FIG. 3, and a light emitting layer 75 that generates light, and the light emitting layer 75.
- a hole transport layer 74 capable of passing light generated from the light emitting layer 75, and a first electrode layer (transparent anode) using a thin silver layer 73, the light scattering layer 72, and the transparent substrate 71 are laminated in this order.
- the structure of the other side surface of the light emitting layer 75 (the side where light is not extracted: the lower side of the figure) is different.
- an electron transport layer 76, a transparent cathode layer 77, an optical transparent layer 70, and a light reflecting metal layer 78 are laminated in this order.
- the same thin silver layer (Ag, thickness 8 nm) as in the above embodiments is used.
- the same material as the charge transport layer an organic material such as polyethylene naphthalate, or an inorganic material such as SiOX, SiO2, Ta2O5 can be used.
- the light reflecting metal layer 78 and the transparent cathode layer 77 can be further separated by the optical transparent layer 70, and plasmon loss can be further reduced.
- a configuration in which the optical transparent layer 70 is not provided can be employed.
- FIG. 17 is a cross-sectional view showing the structure of the surface light emitting element 8a in the sixth embodiment.
- the surface light emitting element 8a has the same basic configuration (material, layer thickness) as the surface light emitting element 5a in the fifth embodiment shown in FIG. 16, and includes a light emitting layer 85 that generates light, and the light emitting layer 85.
- a hole transport layer 84, a first electrode layer (transparent anode) 83, and a light scattering layer 82 through which light generated from the light emitting layer 85 can pass are disposed on one side of the light (light extraction side: upper side in the figure).
- a transparent substrate 81 are laminated in this order.
- An electron transport layer 86, a transparent cathode layer 87, an optical transparent layer 80, and a light reflecting metal layer 88 are arranged in this order on the other surface of the light emitting layer 85 (the side from which light is not extracted: the lower side of the figure). Are stacked.
- Embodiment 5 The difference from Embodiment 5 is that a base layer 89 is provided between the first electrode layer (transparent anode) 83 and the light scattering layer 82.
- the material and the layer thickness of the foundation layer 89 are the same as those of the foundation layer 49 in the second embodiment.
- FIG. 18 is a cross-sectional view showing the structure of the surface light emitting element 9a in the seventh embodiment.
- the basic configuration (material, layer thickness) of the surface light emitting element 9a is the same as that of the surface light emitting element 3a in the first embodiment, and the difference is that the positive / negative configuration of the electrodes is reversed.
- ITO is a material suitable for the anode
- a configuration such as the surface light emitting element 1a shown in Related Art 1 is often used as a typical sequential stacking configuration.
- a thin silver layer is used for the first electrode layer (transparent anode), but the thin silver layer can be used relatively easily as both an anode and a cathode.
- the surface light emitting element 9a includes a light emitting layer 95 that generates light, and light generated from the light emitting layer 95 on one surface of the light emitting layer 95 (light extraction side: upper side in the drawing).
- the first electrode layer (transparent cathode) 93, the light scattering layer 92, and the transparent substrate 91 are laminated in this order.
- a hole transport layer 94 and a metal anode layer (reflecting electrode) 97 are laminated in this order on the other side of the light emitting layer 95 (the side where light is not extracted: the lower side of the figure).
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 3a in the first embodiment, and the waveguide mode is extracted by the light scattering layer 92. Is possible.
- FIG. 19 is a cross-sectional view illustrating the structure of the surface light emitting element 10a according to the eighth embodiment.
- the basic configuration (material, layer thickness) of the surface light emitting element 10a is the same as that of the surface light emitting element 4a in the second embodiment. The difference is that the positive and negative configurations of the electrodes are reversed for the same reason as described in the seventh embodiment.
- the surface light emitting element 10a includes a light emitting layer 105 that generates light, and light generated from the light emitting layer 105 on one surface (light extraction side: upper side in the drawing) of the light emitting layer 105.
- An electron transport layer 106, a first electrode layer (transparent cathode) 103, a base layer 109, a light scattering layer 102, and a transparent substrate 101 are laminated in this order.
- a hole transport layer 104 and a metal anode layer (reflective electrode) 107 are laminated in this order on the other side of the light emitting layer 105 (the side where light is not extracted: the lower side of the figure).
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 4a in the second embodiment, and the waveguide mode is extracted by the light scattering layer 102. Is possible.
- FIG. 20 is a cross-sectional view illustrating the structure of the surface light emitting element 11a according to the ninth embodiment.
- the basic configuration (material, layer thickness) of the surface light emitting element 11a is the same as that of the surface light emitting element 5a in the third embodiment. The difference is that the positive and negative configurations of the electrodes are reversed for the same reason as described in the seventh embodiment.
- the surface light emitting element 11a includes the light emitting layer 115 that generates light, and the light generated from the light emitting layer 115 on one surface of the light emitting layer 115 (light extraction side: upper side in the drawing).
- An electron transport layer 116, a first electrode layer (transparent cathode) 113, a light scattering layer 112, and a transparent substrate 111 are laminated in this order.
- the hole transport layer 114, the transparent anode layer 117, and the light reflecting metal layer 118 are laminated in this order on the other side of the light emitting layer 115 (the side where light is not extracted: the lower side of the figure).
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 5a in the third embodiment, and the waveguide mode is extracted by the light scattering layer 112. Is possible.
- FIG. 21 is a cross-sectional view illustrating the structure of the surface light emitting element 12a according to the tenth embodiment.
- the basic configuration (material, layer thickness) of surface emitting element 12a is the same as surface emitting element 6a in the fourth embodiment. The difference is that the positive and negative configurations of the electrodes are reversed for the same reason as described in the seventh embodiment.
- the surface light emitting element 12a includes the light emitting layer 125 that generates light, and the light generated from the light emitting layer 125 on one surface of the light emitting layer 125 (light extraction side: upper side in the drawing).
- An electron transport layer 126, a first electrode layer (transparent cathode) 123, a base layer 129, a light scattering layer 122, and a transparent substrate 121 are laminated in this order.
- the hole transport layer 124, the transparent anode layer 127, and the light reflecting metal layer 128 are laminated in this order on the other side of the light emitting layer 125 (the side from which light is not extracted: the lower side of the figure). .
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 6a in the fourth embodiment, and the waveguide mode is extracted by the light scattering layer 112. Is possible.
- FIG. 22 is a cross-sectional view showing a structure of surface emitting element 13a in the eleventh embodiment.
- the basic configuration (material, layer thickness) of surface light emitting element 13a is the same as surface light emitting element 7a in the fifth embodiment. The difference is that the positive and negative configurations of the electrodes are reversed for the same reason as described in the seventh embodiment.
- the surface light emitting element 13a includes a light emitting layer 135 that generates light, and light generated from the light emitting layer 135 on one surface (light extraction side: upper side in the drawing) of the light emitting layer 135.
- An electron transport layer 136, a first electrode layer (transparent cathode) 133, a light scattering layer 132, and a transparent substrate 131 are laminated in this order.
- a hole transport layer 134, a transparent anode layer 137, an optical transparent layer 130, and a light-reflecting metal layer 138 are provided on the other side of the light emitting layer 135 (the side from which light is not extracted: the lower side of the figure). They are stacked in order.
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 7a in the fifth embodiment, and the waveguide mode is extracted by the light scattering layer 132. Is possible.
- FIG. 23 is a cross-sectional view showing the structure of surface emitting element 14a according to the twelfth embodiment.
- the basic configuration (material, layer thickness) of surface emitting element 14a is the same as surface emitting element 8a in the sixth embodiment. The difference is that the positive and negative configurations of the electrodes are reversed for the same reason as described in the seventh embodiment.
- the surface light emitting element 14a includes the light emitting layer 145 that generates light and the light generated from the light emitting layer 145 on one surface of the light emitting layer 145 (the light extraction side: the upper side in the drawing).
- An electron transport layer 146, a first electrode layer (transparent cathode) 143, a base layer 149, a light scattering layer 142, and a transparent substrate 141 are laminated in this order.
- a hole transport layer 144, a transparent anode layer 147, an optical transparent layer 140, and a light reflecting metal layer 148 are provided on the other side of the light emitting layer 145 (the side from which light is not extracted: the lower side of the figure). They are stacked in order.
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 8a in the sixth embodiment, and the guided mode is extracted by the light scattering layer 142. Is possible.
- FIG. 24 is a cross-sectional view showing a structure of surface light emitting element 15a in the thirteenth embodiment.
- the basic configuration (material, layer thickness) of the surface light emitting element 15a is the same as that of the surface light emitting element 3a in the first embodiment.
- the difference is that silver magnesium is used instead of silver as the material of the first electrode layer (transparent anode).
- silver magnesium is a conductive material having a negative real part of the complex dielectric constant and has equivalent characteristics.
- the surface light emitting element 15a includes the light emitting layer 155 that generates light, and the light generated from the light emitting layer 155 on one surface of the light emitting layer 155 (light extraction side: upper side in the drawing).
- Hole transport layer 154, first electrode layer (transparent anode) 153, light scattering layer 152, and transparent substrate 151 are stacked in this order.
- An electron transport layer 156 and a metal cathode layer (reflecting electrode) 157 are laminated in this order on the other side of the light emitting layer 155 (the side from which light is not extracted: the lower side of the figure).
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 3a in the first embodiment, and the waveguide mode is extracted by the light scattering layer 152. Is possible.
- FIG. 25 is a cross-sectional view showing the structure of surface emitting element 16a in the fourteenth embodiment.
- the basic configuration (material, layer thickness) of the surface light emitting element 16a is the same as that of the surface light emitting element 3a in the first embodiment.
- the difference is that gold is used instead of silver as the material of the first electrode layer (transparent anode).
- Gold like silver, is a conductive material having a negative real part of the complex dielectric constant, and has equivalent characteristics.
- the surface light emitting element 16a includes the light emitting layer 165 that generates light, and the light generated from the light emitting layer 165 on one surface of the light emitting layer 165 (the light extraction side: the upper side in the drawing).
- Hole transport layer 164, first electrode layer (transparent cathode) 163, light scattering layer 162, and transparent substrate 161 are laminated in this order.
- An electron transport layer 166 and a metal cathode layer (reflecting electrode) 167 are laminated in this order on the other side of the light emitting layer 165 (the side from which light is not extracted: the lower side of the figure).
- the optical characteristics can reduce the plasmon loss similarly to the surface light emitting element 3a in the first embodiment, and the waveguide mode is extracted by the light scattering layer 162. Is possible.
- FIG. 26 shows the light extraction efficiency of each surface light emitting element in the related techniques 1 and 2 and Embodiments 1 to 14. In Related Technologies 1 and 2, the light extraction efficiency was less than 40%. In each of the surface light emitting devices in Embodiments 1 to 14, it was confirmed that the light extraction efficiency can be improved to 40% or more.
- the distance D1 from the center position of the light emitting layer to the light emitting layer side surface of the second electrode layer is the distance from the center position of the light emitting layer to the light emitting layer side surface of the first electrode layer. It was set longer than D2.
- a thin metal is used as the transparent electrode on the light extraction side.
- plasmon loss can be reduced as compared with a normal first electrode layer (transparent electrode) such as ITO.
- the distance from the light emitting layer to the reflective electrode can be shortened. As a result, electrical characteristics can be improved. Waveguide mode light confined by the light emitting layer and the transparent electrode can be extracted into the substrate and air by the adjacent high refractive index scattering layer.
- a light emitting layer that generates light and a first electrode layer that is provided on a light extraction side of the light emitting layer and that allows light generated from the light emitting layer to pass therethrough,
- a second electrode layer provided on the side of the light emitting layer from which light is not extracted, a light scattering layer provided on the side of the first electrode layer opposite to the side where the light emitting layer is located, and the light scattering layer.
- a transparent substrate provided on the side opposite to the side where the light emitting layer is located, and a conductive material having a negative real part of the complex dielectric constant is used for the first electrode layer.
- the conductive material having a negative real part of the complex dielectric constant can be formed of metal.
- the metal can be formed of silver or an alloy containing silver as a main component.
- the light scattering layer can be composed of a layer having a higher refractive index than the transparent substrate.
- the second electrode layer includes a transparent electrode layer provided on the light emitting layer side and a light reflecting metal layer provided on the opposite side of the transparent electrode layer from the side where the light emitting layer is located. be able to.
- an optical transparent layer can be further included between the transparent electrode layer and the light reflecting metal layer.
- the transparent electrode layer can be made of a metal having a negative real part of the complex dielectric constant. Moreover, it can comprise so that the base layer which lets light pass may be further included between the said 1st electrode layer and the said light-scattering layer.
- the distance from the center position of the light emitting layer to the surface of the second electrode layer on the light emitting layer side is greater than the distance from the center position of the light emitting layer to the surface of the first electrode layer on the light emitting layer side. It can be configured to be long.
- the distance from the center position of the light emitting layer to the surface of the second electrode layer on the light emitting layer side can be configured to be less than 100 nm.
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Abstract
Description
図1および図2を参照して、本発明に基づいた各実施の形態における面発光素子の構造を説明する前に、関連技術1および2における面発光素子1aおよび2aについて説明する。
まず、図1を参照して、関連技術1における面発光素子1aについて説明する。図1は、関連技術1における面発光素子1aの構造を示す断面図である。
図2に、関連技術2における面発光素子2aを示す。この面発光素子2aは、上記面発光素子1aの構成と同様に、光を発生する発光層25と、この発光層25の一方側の面(光取出し側:図の上側)には、発光層25から発生した光の通過が可能である正孔輸送層24、第1電極層(透明陽極)23、光散乱層22、および透明基板21が、この順に積層されている。
次に、図3を参照して、実施の形態1における面発光素子3aについて説明する。図3は、実施の形態1における面発光素子3aの構造を示す断面図である。この面発光素子3aは、基本的構成(材料、層厚さ)は、図1に示す関連技術1における面発光素子1aと同じであり、光を発生する発光層35と、この発光層35の一方側の面(光取出し側:図の上側)には、発光層35から発生した光の通過が可能である正孔輸送層34、第1電極層(透明陽極)33、光散乱層32、および透明基板31が、この順に積層されている。
次に、図13を参照して、実施の形態2における面発光素子4aについて説明する。図13は、実施の形態2における面発光素子4aの構造を示す断面図である。この面発光素子4aは、基本的構成(材料、層厚さ)は、図3に示す実施の形態1における面発光素子3aと同じであり、光を発生する発光層45と、この発光層45の一方側の面(光取出し側:図の上側)には、発光層45から発生した光の通過が可能である正孔輸送層44、第1電極層(透明陽極)43、光散乱層42、および透明基板41が、この順に積層されている。
次に、図14を参照して、実施の形態3における面発光素子5aについて説明する。図14は、実施の形態3における面発光素子5aの構造を示す断面図である。この面発光素子5aは、基本的構成(材料、層厚さ)は、図2に示す関連技術2における面発光素子2aと同じであり、光を発生する発光層55と、この発光層55の一方側の面(光取出し側:図の上側)には、発光層55から発生した光の通過が可能である正孔輸送層54、第1電極層(透明陽極)53、光散乱層52、および透明基板51が、この順に積層されている。
次に、図15を参照して、実施の形態4における面発光素子6aについて説明する。図15は、実施の形態4における面発光素子6aの構造を示す断面図である。この面発光素子6aは、基本的構成(材料、層厚さ)は、図14に示す実施の形態3における面発光素子5aと同じであり、光を発生する発光層65と、この発光層65の一方側の面(光取出し側:図の上側)には、発光層65から発生した光の通過が可能である正孔輸送層64、第1電極層(透明陽極)63、光散乱層62、および透明基板61が、この順に積層されている。
次に、図16を参照して、実施の形態5における面発光素子7aについて説明する。図16は、実施の形態5における面発光素子7aの構造を示す断面図である。この面発光素子7aは、基本的構成(材料、層厚さ)は、図3に示す実施の形態1における面発光素子3aと同じであり、光を発生する発光層75と、この発光層75の一方側の面(光取出し側:図の上側)には、発光層75から発生した光の通過が可能である正孔輸送層74、薄銀層を用いた第1電極層(透明陽極)73、光散乱層72、および、透明基板71が、この順に積層されている。
次に、図17を参照して、実施の形態6における面発光素子8aについて説明する。図17は、実施の形態6における面発光素子8aの構造を示す断面図である。この面発光素子8aは、基本的構成(材料、層厚さ)は、図16に示す実施の形態5における面発光素子5aと同じであり、光を発生する発光層85と、この発光層85の一方側の面(光取出し側:図の上側)には、発光層85から発生した光の通過が可能である正孔輸送層84、第1電極層(透明陽極)83、光散乱層82、および透明基板81が、この順に積層されている。
次に、図18を参照して、実施の形態7における面発光素子9aについて説明する。図18は、実施の形態7における面発光素子9aの構造を示す断面図である。この面発光素子9aの基本的構成(材料、層厚さ)は、実施の形態1における面発光素子3aと同じであり、相違点は、電極の正負構成を逆転させた構成となっている。
次に、図19を参照して、実施の形態8における面発光素子10aについて説明する。図19は、実施の形態8における面発光素子10aの構造を示す断面図である。この面発光素子10aの基本的構成(材料、層厚さ)は、実施の形態2における面発光素子4aと同じである。相違点は、上記実施の形態7に示す同様の理由から、電極の正負構成を逆転させた構成となっている。
次に、図20を参照して、実施の形態9における面発光素子11aについて説明する。図20は、実施の形態9における面発光素子11aの構造を示す断面図である。この面発光素子11aの基本的構成(材料、層厚さ)は、実施の形態3における面発光素子5aと同じである。相違点は、上記実施の形態7に示す同様の理由から、電極の正負構成を逆転させた構成となっている。
次に、図21を参照して、実施の形態10における面発光素子12aについて説明する。図21は、実施の形態10における面発光素子12aの構造を示す断面図である。この面発光素子12aの基本的構成(材料、層厚さ)は、実施の形態4における面発光素子6aと同じである。相違点は、上記実施の形態7に示す同様の理由から、電極の正負構成を逆転させた構成となっている。
次に、図22を参照して、実施の形態11における面発光素子13aについて説明する。図22は、実施の形態11における面発光素子13aの構造を示す断面図である。この面発光素子13aの基本的構成(材料、層厚さ)は、実施の形態5における面発光素子7aと同じである。相違点は、上記実施の形態7に示す同様の理由から、電極の正負構成を逆転させた構成となっている。
次に、図23を参照して、実施の形態12における面発光素子14aについて説明する。図23は、実施の形態12における面発光素子14aの構造を示す断面図である。この面発光素子14aの基本的構成(材料、層厚さ)は、実施の形態6における面発光素子8aと同じである。相違点は、上記実施の形態7に示す同様の理由から、電極の正負構成を逆転させた構成となっている。
次に、図24を参照して、実施の形態13における面発光素子15aについて説明する。図24は、実施の形態13における面発光素子15aの構造を示す断面図である。この面発光素子15aの基本的構成(材料、層厚さ)は、実施の形態1における面発光素子3aと同じである。相違点は、第1電極層(透明陽極)の材料として、銀ではなく銀マグネシウムを用いている点にある。銀マグネシウムも銀と同様に、複素誘電率の実部が負の導電材料であり、同等の特性を有する。
次に、図25を参照して、実施の形態14における面発光素子16aについて説明する。図25は、実施の形態14における面発光素子16aの構造を示す断面図である。この面発光素子16aの基本的構成(材料、層厚さ)は、実施の形態1における面発光素子3aと同じである。相違点は、第1電極層(透明陽極)の材料として、銀ではなく金を用いている点にある。金も銀と同様に、複素誘電率の実部が負の導電材料であり、同等の特性を有する。
図26に、上記関連技術1、2および実施の形態1~14における各面発光素子の光取り出し効率を示す。関連技術1、2においては、光取出し効率はいずれも40%未満であったが。施の形態1~14における各面発光素子においては、光取出し効率をいずれも40%以上に向上させることが可能であることが確認できた。
Claims (10)
- 光を発生する発光層と、
前記発光層の光を取り出す側に設けられ、前記発光層から発生した光の通過が可能である第1電極層と、
前記発光層の光を取り出さない側に設けられる第2電極層と、
前記第1電極層の前記発光層が位置する側とは反対側に設けられる光散乱層と、
前記光散乱層の前記発光層が位置する側とは反対側に設けられる透明基板と、を備え、
前記第1電極層には、複素誘電率の実部が負の導電材料が用いられる、面発光素子。 - 前記複素誘電率の実部が負の導電材料は、金属である、請求項1に記載の面発光素子。
- 前記金属は、銀または銀を主成分とする合金である、請求項2に記載の面発光素子。
- 前記光散乱層は、前記透明基板よりも、高い屈折率を有する層である、請求項1から3のいずれか1項に記載の面発光素子。
- 前記第2電極層は、
前記発光層側に設けられる透明電極層と、
前記透明電極層の前記発光層が位置する側とは反対側に設けられる光反射金属層と、を含む、請求項1から4のいずれか1項に記載の面発光素子。 - 前記透明電極層と前記光反射金属層との間に、光学透明層をさらに含む、請求項5に記載の面発光素子。
- 前記透明電極層は、前記複素誘電率の実部が負の金属である、請求項5または6に記載の面発光素子。
- 前記第1電極層と前記光散乱層との間に、光を通過させる下地層をさらに含む、請求項1から7のいずれか1項に記載の面発光素子。
- 前記発光層の中心位置から前記第2電極層の前記発光層側の面までの距離は、前記発光層の中心位置から前記第1電極層の前記発光層側の面までの距離よりも長い、請求項1から8のいずれか1項に記載の面発光素子。
- 前記発光層の中心位置から前記第2電極層の前記発光層側の面までの距離は、100nm未満である、請求項9に記載の面発光素子。
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