WO2014132312A1 - 太陽電池モジュールおよび太陽電池モジュールの製造方法 - Google Patents
太陽電池モジュールおよび太陽電池モジュールの製造方法 Download PDFInfo
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- WO2014132312A1 WO2014132312A1 PCT/JP2013/007088 JP2013007088W WO2014132312A1 WO 2014132312 A1 WO2014132312 A1 WO 2014132312A1 JP 2013007088 W JP2013007088 W JP 2013007088W WO 2014132312 A1 WO2014132312 A1 WO 2014132312A1
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- solar cell
- light
- region
- cell element
- cell module
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a solar cell module and a method for manufacturing the solar cell module.
- the light receiving surface which is the light incident surface of the solar cell, may be provided with an ineffective region that hardly contributes to power generation even if light is incident on a region located on the outer periphery of the light receiving surface for the convenience of the manufacturing process.
- an ineffective region that hardly contributes to power generation even if light is incident on a region located on the outer periphery of the light receiving surface for the convenience of the manufacturing process.
- a structure for effectively using incident light by providing a light diffusion sheet on the ineffective region and diffusing the light incident on the ineffective region has been proposed (for example, , See Patent Document 1).
- the present invention has been made in view of such circumstances, and an object thereof is to provide a technique for improving the power generation efficiency of a solar cell module.
- a solar cell module includes a solar cell element, a sealing layer provided on a surface of the solar cell element, an invalid region on the surface, and a sealing layer.
- a light diffusing portion provided to have a curvature therebetween.
- Another aspect of the present invention is a method for manufacturing a solar cell module. This method prepares a solar cell element having a surface and a sealing layer for sealing the solar cell element, and reflects more than the solar cell element through a printing plate having a pattern corresponding to the invalid area of the surface. A paint containing a high-rate resin is applied to the ineffective region, and the solar cell element on which the paint is printed is sealed with a sealing layer.
- the power generation efficiency of the solar cell module can be improved.
- FIG. 10 is a cross-sectional view showing a light diffusing portion according to Modification 1.
- FIG. 10 is a figure which shows typically the pattern of the printing plate which concerns on the modification 1.
- FIG. 10 is a cross-sectional view showing a light diffusing portion according to Modification 2.
- FIG. 10 is a cross-sectional view showing a light diffusing portion according to Modification 3.
- FIG. 10 is a cross-sectional view showing a light diffusing portion according to Modification 4.
- FIG. 10 is a cross-sectional view showing a light diffusing portion according to Modification 5.
- FIG. 10 is a cross-sectional view showing a light diffusing portion according to Modification 1.
- FIG. 1 is a cross-sectional view showing the structure of the solar cell module 100 according to the first embodiment
- FIG. 2 is an external view showing the solar cell element 70 as seen from the light receiving surface 70a side.
- the solar cell module 100 is adjacent to the solar cell element 70 and the light diffusion part 60 provided to have a curvature in the outer peripheral region C1 of the light receiving surface 70a that is one of the surfaces of the solar cell element 70.
- the tab wiring 72 which connects the solar cell elements 70 to be connected to each other is provided.
- the solar cell element 70 is formed in the outer peripheral region C1 of the light reception surface 70a. Is not formed. For this reason, the outer peripheral area C1 is an ineffective area that hardly contributes to power generation even when light enters.
- the light diffusing unit 60 Since the light diffusing unit 60 has higher reflectance than the solar cell element 70, the light diffusing unit 60 has light diffusibility with respect to incident light, and scatters light incident toward the outer peripheral region C1 to contribute to power generation.
- the battery element 70 is directed toward the effective area C2. Further, since the light diffusing unit 60 has a gentle curvature and a raised shape so as to draw a convex curved surface, it is possible to effectively scatter incident light toward the outer peripheral region C1. Thereby, the light absorbed in the ineffective region can be reflected and absorbed in the effective region C2 to contribute to power generation, and the power generation efficiency of the solar cell element 70 can be improved as compared with the case where the light diffusion portion 60 is not provided. Can be improved.
- the solar cell module 100 includes a plurality of solar cell elements 70 (not shown).
- the solar cell element 70 includes a power generation layer 10, a first transparent electrode layer 18, a first metal electrode 20, a second transparent electrode layer 28, and a second metal electrode 30.
- the power generation layer 10 includes a base substrate 12, a first i-type layer 14, a first conductivity type layer 16, a second i-type layer 24, and a second conductivity type layer 26.
- the base substrate 12 is, for example, a crystalline semiconductor layer, and is a single crystal semiconductor layer or a polycrystalline semiconductor layer in which a large number of crystal grains are aggregated.
- an n-type crystalline silicon substrate is used as the base substrate 12, and the doping concentration is about 10 16 / cm 3 .
- the base substrate 12 is provided with a texture structure for improving the light absorption efficiency of the solar cell element 70, as will be described later with reference to FIG.
- the first i-type layer 14 and the first conductivity type layer 16 are amorphous semiconductor layers, and are semiconductor layers including an amorphous phase or a microcrystalline phase in which minute crystal grains are precipitated in the amorphous phase. is there.
- amorphous silicon containing hydrogen is used.
- the first i-type layer 14 is substantially intrinsic amorphous silicon
- the first conductivity type layer 16 is p-type amorphous silicon.
- the first conductivity type layer 16 has a higher dopant concentration than the first i-type layer 14.
- first i-type layer 14 and the first conductivity type layer 16 are not formed in the outer peripheral region C1 of the base substrate 12, but are formed in the effective region C2 that is an inner region by a certain distance.
- the second i-type layer 24 and the second conductivity type layer 26 are amorphous semiconductor layers, and are semiconductor layers including an amorphous phase or a microcrystalline phase in which minute crystal grains are precipitated in the amorphous phase. is there.
- amorphous silicon containing hydrogen is used.
- the second i-type layer 24 is substantially intrinsic amorphous silicon, and the second conductivity type layer 26 is n-type amorphous silicon.
- the second conductivity type layer 26 has a higher dopant concentration than the second i-type layer 24.
- the first transparent electrode layer 18 and the second transparent electrode layer 28 are made of tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc., tin (Sn), antimony (Sb), tungsten (W ), Fluorine (F), aluminum (Al) or the like, it is preferable to use at least one kind or a combination of plural kinds of transparent conductive oxides (TCO).
- the first transparent electrode layer 18 is formed in a region further inside the effective region C2.
- the second transparent electrode layer 28 is formed in a region that is a certain distance inside the region where the second i-type layer 24 and the second conductivity type layer 26 are formed. This is to prevent a short circuit between the first transparent electrode layer 18 and the second transparent electrode layer 28 and the base substrate 12.
- the first transparent electrode layer 18 side of the solar cell element 70 is the light receiving surface 70a.
- the light receiving surface means a main surface on which light (sunlight) is mainly incident in the solar cell element 70. Specifically, most of the light incident on the solar cell element 70 is incident. It is a surface. As shown in FIG. 2, the light receiving surface 70 a has an octagonal shape including four long sides 74 and four short sides 76.
- the first metal electrode 20 and the second metal electrode 30 are electrodes for taking out the electric power generated by the power generation layer 10 to the outside.
- the first metal electrode 20 is provided on the light receiving surface 70a of the solar cell element 70, and the second metal electrode 30 is provided on the back surface 70b facing the light receiving surface 70a.
- the first metal electrode 20 and the second metal electrode 30 are conductive materials including, for example, copper (Cu) or aluminum (Al).
- An electrolytic plating layer such as copper (Cu) or tin (Sn) may be included. However, it is not limited to this, It is good also as other metals, such as gold
- the solar cell module 100 includes a tab wiring 72 that connects adjacent solar cell elements 70 to each other.
- the tab wiring 72 is an elongated metal foil, for example, a copper foil coated with silver. One end of the tab wiring 72 is connected to the first metal electrode 20 of the solar cell element 70, and the other end is connected to the second metal electrode 30 of another solar cell element 70 to be interconnected.
- the solar cell module 100 includes a protective substrate 40, a back sheet 50, a first sealing layer 42, and a second sealing layer 44.
- the protective substrate 40 and the back sheet 50 protect the solar cell element 70 from the external environment.
- the protective substrate 40 provided on the light receiving surface 70a side transmits light in a wavelength band that the solar cell element 70 absorbs for power generation.
- the protective substrate 40 is, for example, a glass substrate.
- the back sheet 50 is a resin substrate such as EVA or polyimide, or the same glass substrate as the protective substrate 40.
- the first sealing layer 42 and the second sealing layer 44 are resin materials such as EVA and polyimide. Thereby, while preventing the penetration
- a white resin material in which particles such as titania are dispersed may be used.
- the light transmitted through the solar cell element 70 and reaching the second sealing layer 44 can be scattered and directed again to the solar cell element 70.
- the first metal electrode 20 includes a plurality of finger electrodes 21 extending in parallel to each other and three bus bar electrodes 22 extending perpendicular to the finger electrodes 21. Since the finger electrode 21 is an electrode formed on the effective region C2, it is desirable to form the finger electrode 21 so as not to block light incident on the power generation layer 10.
- the bus bar electrode 22 connects a plurality of finger electrodes 21 to each other.
- the bus bar electrode 22 needs to be thin to some extent so that the power collected from the plurality of finger electrodes 21 can be efficiently flowed while being thin enough not to block light incident on the power generation layer 10.
- the second metal electrode 30 also includes a plurality of finger electrodes extending in parallel with each other and three bus bar electrodes extending perpendicular to the finger electrodes.
- the back surface 70b side is not a main surface where sunlight is mainly incident, the number of finger electrodes on the back surface 70b side is higher than that on the light receiving surface 70a side, thereby increasing the current collection efficiency. Also good.
- FIG. 3 is a cross-sectional view showing the light diffusion portion 60.
- Light diffusing portion 60 is made of a material having a light diffusing property to light having a wavelength which the solar cell element 70 is absorbed, for example, titania resin substrate such as epoxy resin or an acrylic resin (TiO 2) or alumina ( A white material in which particles such as Al 2 O 3 ) are dispersed is used.
- the light diffusing unit 60 needs to have a height h that can sufficiently scatter incident light.
- the height h may be 3 ⁇ m or more and 100 ⁇ m or less.
- the light diffusing unit 60 is formed in a convex curved surface having a gentle curvature so as to rise up with respect to the light receiving surface 70a so that incident light toward the outer peripheral region C1 can be effectively scattered. Further, the light diffusing unit 60 is formed so as to cover at least a part of the side surface 70c so that incident light directed toward the side surface 70c of the solar cell element 70 can also be scattered. By providing the light diffusing unit 60 on both the light receiving surface 70a and the side surface 70c, curved surfaces having various inclinations with respect to incident light can be formed, and light incident on the light diffusing unit 60 is effectively scattered. be able to.
- the light diffusion portion 60 is formed so as to avoid the corner portion 70d formed by the light receiving surface 70a and the side surface 70c. By forming the light diffusion portion 60 while avoiding the corner portion 70d, the amount of the resin material necessary for forming the light diffusion portion 60 is reduced as compared with the case where the light diffusion portion 60 is provided so as to cover the corner portion 70d. Can do.
- FIG. 4 is a diagram showing a solar cell element 70 on which an electrode is formed.
- the base substrate 12 is a crystalline semiconductor material, for example, a semiconductor substrate such as silicon, polycrystalline silicon, gallium arsenide (GaAs), or indium phosphide (InP).
- a semiconductor substrate such as silicon, polycrystalline silicon, gallium arsenide (GaAs), or indium phosphide (InP).
- GaAs gallium arsenide
- InP indium phosphide
- the base substrate 12 may be made of a material other than silicon, and these layers may be made of materials other than the silicon layer.
- a texture structure is formed on the first surface 12a, the second surface 12b, and the side surface 12c of the base substrate 12.
- a first i-type layer 14 and a first conductivity type layer 16 are sequentially formed on the first surface 12a of the base substrate 12, and a second i-type layer 24 and a second conductivity type layer 26 are formed on the second surface 12b.
- the power generation layer 10 is formed by sequentially forming the layers.
- the first i-type layer 14 and the first conductivity type layer 16 can be formed by plasma enhanced chemical vapor deposition (PECVD) using a silicon-containing gas such as silane (SiH 4 ).
- PECVD plasma enhanced chemical vapor deposition
- the source gas is mixed with a dopant-containing gas such as diborane (B 2 H 6 ) as necessary.
- the second i-type layer 24 and the second conductivity-type layer 26 can also be formed by plasma enhanced chemical vapor deposition (PECVD) using a silicon-containing gas such as silane (SiH 4 ).
- the source gas is mixed with a dopant-containing gas such as phosphine (PH 3 ) as necessary.
- the first i-type layer 14 and the first conductivity type layer 16 are formed by disposing a mask provided with an opening corresponding to the outer peripheral region C1 on the first surface 12a, so that the first i-type layer 14 and the first conductivity type layer 16 are on the inside by a certain distance. It is formed in the effective area C2, which is an area.
- both the first i-type layer 14, the first conductivity type layer 16, the second i-type layer 24, and the second conductivity type layer 26 wrap around the side surface 12c. It can adhere and it can prevent that both will contact and will be in a short circuit state.
- the first transparent electrode layer 18 and the first metal electrode 20 are formed on the first conductivity type layer 16, and the second transparent electrode layer 28 and the second metal electrode 30 are formed on the second conductivity type layer 26. .
- the first transparent electrode layer 18 and the second transparent electrode layer 28 can be formed by a thin film forming method such as sputtering or plasma enhanced chemical vapor deposition (PECVD).
- PECVD plasma enhanced chemical vapor deposition
- the first metal electrode 20 and the second metal electrode 30 can be formed by printing a conductive material such as silver (Ag) paste by a screen printing method.
- FIG. 5 is a diagram schematically showing a printing plate 80 used for application of the light diffusion unit 60.
- the printing plate 80 has a pattern 82 corresponding to the outer peripheral area C1 of the light receiving surface 70a, and the light diffusing portion 60 is formed by printing a light diffusing paint through the printing plate 80.
- offset printing is used.
- the offset printing includes intaglio offset printing and planographic offset printing, and the printing plate has a planar shape or a cylindrical shape. In this embodiment, a planar intaglio printing plate is used. A case where intaglio offset printing is performed will be described.
- the printing plate 80 is provided with a recess as a pattern 82 corresponding to the outer peripheral area C1. By transferring the paint embedded in the recess to the cylindrical blanket, the paint transferred to the blanket is applied to the outer peripheral area C1 on the light receiving surface 70a.
- FIG. 6 and 7 are diagrams showing a process of applying the light diffusion portion 60 by offset printing.
- paints 62 a and 62 b are transferred to positions corresponding to the concave portions of the printing plate 80 having the pattern 82.
- FIG. 7 from the state shown in FIG. 6, by rotating the blanket 86 in the Y direction while moving in the X direction, the paint 62a transferred to the blanket 86 is applied to the outer peripheral area C1 on the light receiving surface 70a. .
- the blanket 86 is rotated in the Y direction while moving in the X direction, whereby the paint 62b is applied to the outer peripheral area C1 on the light receiving surface 70a.
- the coating 62a applied to the outer peripheral region C1 has a raised shape that draws a convex curved surface having a gentle curvature due to the surface tension.
- the light diffusing portion 60 having a gentle curvature is formed by curing the paint 62a.
- the paint having such surface tension for example, a white paint in which particles such as titania and alumina are dispersed in a resin base material such as an epoxy resin or an acrylic resin may be used.
- an acrylic resin in order to relieve
- the paint 62a applied to the outer peripheral region C1 is applied not only on the light receiving surface 70a but also on the side surface 70c so as to cover at least a part of the side surface 70c.
- the pattern of the recesses formed on the printing plate 80 may be widened slightly outside the shape of the outer peripheral area C1. Note that the amount of coating material applied may be increased by increasing the depth of the concave portion of the printing plate 80 so that the coating material protrudes from the outer peripheral region C1.
- FIG. 8 and 9 are diagrams showing a process of overcoating the light diffusing unit 60 by offset printing.
- the paints 62c and 62d are again applied by offset printing from the top of the paints 62a and 62b applied to the outer peripheral area C1 by the first offset printing, thereby repeatedly applying the paints.
- the paint 62c applied the second time is overlaid on the paint 62a applied the first time.
- the light diffusing portion 60 having a height of 20 ⁇ m can be formed by two printing steps by applying a coating having a height of 10 ⁇ m by one offset printing.
- the printing process may be repeated three or more times according to the amount of paint that can be suitably applied by one printing and the required height of the light diffusion portion 60.
- the coating materials for the second time and thereafter may be applied.
- the type of the light diffusible particles contained in the paint and the type of resin used as the base material can be changed or the mixing ratio of the materials can be changed between the paint applied the first time and the paint applied after the second time. Also good.
- FIG. 10 is a diagram showing a process of laminating the solar cell element 70 with the protective substrate 40 and the back sheet 50.
- the solar cell elements 70 in which the light diffusion portions 60 are formed are connected by the tab wiring 72
- the first sealing layer 42 and the protective substrate 40 are disposed on the light receiving surface 70a side
- the second sealing layer 44 and the back surface are disposed on the back surface 70b.
- the sheet 50 is arranged.
- the solar cell element 70 is thermocompression-bonded in a state where it is sandwiched between the protective substrate 40 and the back sheet 50. Thereby, the 1st sealing layer 42 and the 2nd sealing layer 44 fuse
- FIG. 11 is a diagram schematically showing how incident light is scattered by the light diffusing unit 60.
- Incident light A1 incident from the protective substrate 40 passes through the protective substrate 40 and the first sealing layer 42 to reach the light diffusion portion 60, is scattered by the light diffusion portion 60, and travels toward the protective substrate 40.
- the incident angle ⁇ of the scattered light A2 with respect to the upper surface 40a of the protective substrate 40 is equal to or greater than the critical angle, the scattered light A2 is totally reflected on the upper surface 40a. Can be directed to C2.
- the outer periphery is compared with the case where the light diffusion portion is provided flat on the light receiving surface 70a.
- Incident light traveling toward the region C1 can be scattered in a direction different from the incident light. Thereby, more scattered light A2 can be totally reflected by the upper surface 40a, and can be made to go to the effective area
- the light diffusion part 60 in a present Example can be manufactured by the process of printing a coating material, compared with the case where the sheet
- the light diffusion portion 60 is formed so as to cover the entire surface of the outer peripheral region C1, but the light diffusion portion 60 may be formed only in a part of the outer peripheral region C1.
- the solar cell module 100 according to the second embodiment has the same structure as that of the first embodiment shown in FIG. 1 except that the light diffusion portion 60 is formed by screen printing.
- the light diffusion portion 60 is formed by screen printing.
- FIG. 12 and 13 are diagrams showing a process of applying the light diffusing unit 60 by screen printing.
- a printing plate 80 having openings 82 a and 82 b having a pattern corresponding to the outer peripheral region C ⁇ b> 1 is disposed on the light receiving surface 70 a of the solar cell element 70, and the paint 62 is placed on the printing plate 80.
- the squeegee 84 is moved in the X direction to apply the paint 62 to the outer peripheral region C1 through the openings 82a and 82b.
- the paint applied to the outer peripheral region C1 has a raised shape that gently draws a convex curved surface due to the surface tension, and the light diffusing unit 60 having a gentle convex curved surface is obtained by curing the paint in this state. Is formed.
- the amount of paint that can be applied by one printing can be increased and the height of the light diffusing unit 60 can be increased compared to the case of offset printing. it can.
- the height of the light diffusion portion 60 can be increased and the light diffusibility can be increased.
- the height of the light diffusing unit 60 may be increased by repeating the printing process twice or more.
- FIG. 14 is a diagram showing a solar cell element 70 according to the third embodiment.
- the solar cell module according to the third embodiment has the same structure as that of the first embodiment shown in FIG. 1, but the widths w 1 to w 4 in the short direction of the light diffusion portion 60 are It is different in different points depending on the arrangement and the structure of the power generation layer constituting the solar cell element 70.
- the light diffusion unit 60 is also provided in the boundary region C3 adjacent to the outer peripheral region C1 in the effective region C2.
- the light that has entered and diffused into the light diffusing unit 60 mainly enters the adjacent region C4 immediately inside the boundary region C3 and contributes to power generation.
- a description will be given focusing on differences from the first embodiment.
- the light receiving surface 70a has an octagonal shape including four long sides 74a to 74d and four short sides 76.
- each of the four long sides 74a to 74d is also referred to as a left side 74a, a right side 74b, an upper side 74c, and a lower side 74d.
- the left side 74 a and the right side 74 b are long sides extending in parallel with the finger electrodes 21, and are long sides extending in a direction (y direction) orthogonal to the bus bar electrode 22.
- the upper side 74 c and the lower side 74 d are long sides extending in parallel with the bus bar electrode 22, and are long sides extending in a direction orthogonal to the finger electrode 21 (x direction).
- the finger electrode 21 is formed on the effective region C2, and is distributed over substantially the entire effective region C2 so that the power generated in the effective region C2 can be collected efficiently.
- the left end finger electrode 21a is provided near the left side 74a
- the right end finger electrode 21b is provided near the right side 74b.
- the upper end portion 21c of the finger electrode 21 extending in the y direction is provided near the upper side 74c
- the lower end portion 21d of the finger electrode 21 is provided near the lower side 74d.
- the finger electrode 21 is an electrode formed on the effective region C2, it is desirable to form the finger electrode 21 so as not to block light incident on the power generation layer 10.
- the width w A in the short direction of the finger electrode 21 may be about 80 ⁇ m.
- the bus bar electrode 22 is provided so as to extend in the x direction from the leftmost finger electrode 21a to the rightmost finger electrode 21b so as to connect each of the plurality of parallel finger electrodes 21. Accordingly, the left end 22a of the bus bar electrode 22 is provided near the left side 74a, and the right end 22b of the bus bar electrode 22 is provided near the right side 74b.
- the bus bar electrode 22 needs to be thin to some extent so that the power collected from the plurality of finger electrodes 21 can be efficiently flowed while being thin enough not to block light incident on the power generation layer 10.
- the width w B in the short direction of the bus bar electrode 22 may be about 100 ⁇ m.
- the light diffusing unit 60 is made of a material having light diffusibility with respect to light having a wavelength that is absorbed by the solar cell element 70.
- having light diffusibility refers to a property of reflecting light incident on the light diffusing unit 60 mainly by diffuse reflection rather than specular reflection.
- the light diffusing unit 60 is made of an electrically insulating material.
- As the light diffusion part 60 having such properties for example, an insulating white material in which particles such as titania (TiO 2 ) and alumina (Al 2 O 3 ) are dispersed in a resin base material such as an epoxy resin or an acrylic resin. Is used. Therefore, the light diffusing unit 60 has a lower electrical conductivity than the finger electrodes 21 and the bus bar electrodes 22 and has a higher light diffusibility than the finger electrodes 21 and the bus bar electrodes 22.
- the light diffusing unit 60 is provided along the long side 74 and the short side 76 so as to cover the entire surface of the outer peripheral region C1 on the light receiving surface 70a.
- the light diffusing section 60 has widths w 1 to w 4 in the short direction perpendicular to the long side 74 or the short side 76 so that the light toward the outer peripheral region C1 can be effectively incident on the effective region C2. It provided wider than the width w B of width w a and the bus bar electrode 22 of the electrode 21.
- the light diffusing unit 60 is provided so that the widths w 1 to w 4 in the short direction are 200 ⁇ m or more.
- the light diffusing unit 60 includes first light diffusing units 160a and 160b provided along the left side 74a and the right side 74b, and second light diffusing units 160c and 160d provided along the upper side 74c and the lower side 74d.
- the first light diffusing portions 160a and 160b are formed so as to have a wider width in the short direction than the second light diffusing portions 160c and 160d.
- the widths w 1 and w 2 of the first light diffusing unit 160a and the first light diffusing unit 160b are provided to be 1 mm or more, specifically, about 1.2 mm.
- the second light diffusion portions 160c and 160d are formed so that the width in the short direction is narrower than that of the first light diffusion portions 160a and 160b.
- the widths w 3 and w 4 of the second light diffusing unit 160c and the second light diffusing unit 160d are provided to be 200 ⁇ m or more and less than 1 mm.
- the second light diffusion portion 160c which corresponds to the upper side 74c is provided such that the width w 3 becomes about 900 .mu.m
- the second light diffusing portion 160d corresponding to the lower side 74d has a width w 4 of about 300 ⁇ m It is provided to become.
- FIG. 15 is a cross-sectional view showing the first light diffusion portions 160a and 160b, and is a cross-sectional view taken along the line AA of FIG.
- the structure of the solar cell element 70 in the present embodiment will be described.
- the first transparent electrode layer 18 is provided in a region inside the effective region C2 where the first i-type layer 14 and the first conductivity type layer 16 are formed.
- region in which the 1st transparent electrode layer 18 is provided changes with cross-sectional directions is used.
- the first transparent electrode layer 18 is also formed on the outer peripheral region C1.
- the first transparent electrode layer 18 is formed inside the effective region C2, as shown in FIG.
- the first light diffusing portions 160a and 160b are provided on the light receiving surface 70a of the solar cell element 70, and are provided so as to cover the upper half region of the side surface 70c on the light receiving surface 70a side.
- the first light diffusion unit 160a, 160b, the height h 1, is provided so as to be slightly lower than the height h 0 and equal to or height h 0 of the bus bar electrode 22.
- the height h 1 of the first light diffusion portions 160a and 160b may be about 20 ⁇ m to 30 ⁇ m.
- the first light diffusing portions 160a and 160b are provided on the outer peripheral region C1 where the first conductivity type layer 16 is not provided, and are adjacent to the outer peripheral region C1 in the effective region C2 where the first conductivity type layer 16 is provided. It is also provided on the boundary region C3.
- the boundary region C3 is a region that has a low current collection efficiency and hardly contributes to power generation because the distance to the finger electrode 21 or the bus bar electrode 22 is far compared with the central portion of the effective region C2.
- the light diffusing unit 60 is provided with the light diffusing unit 60 and allows the incident light to enter the effective region C2 in the region that does not easily contribute to power generation, as compared with the case where the light diffusing unit 60 is not provided and the light is incident as it is. It is desirable to provide it when the power generation efficiency is higher when it is directed to the adjacent region C4 that is a partial region of.
- the light diffused by being incident on the light diffusing portion 60 rarely re-enters the central portion of the light receiving surface 70a, and is mainly incident on the adjacent region C4 close to the light diffusing portion 60. Therefore, if the power generation contribution ratio of the adjacent region C4 is high, the utilization efficiency of the light that is diffused and re-entered by the light diffusion unit 60 is increased. On the other hand, if the power generation contribution ratio of the adjacent region C4 is low, the power generation efficiency will not increase so much even if the light diffusion portion 60 is provided.
- the adjacent region C4 corresponding to the left side 74a is a region close to the left end portion 22a of the bus bar electrode 22, so that the current collection efficiency is relatively high, and the region has a higher power generation contribution ratio than the adjacent region corresponding to the upper side 74c or the lower side 74d. It has become.
- the adjacent region C4 corresponding to the right side 74b has a high power generation contribution rate. Therefore, in the left side 74a and the right side 74b, the widths w 1 and w 2 of the first light diffusing portions 160a and 160b are widened so that the light incident on the outer peripheral region C1 and the boundary region C3 can be adjacent to the high power generation contribution ratio Can be directed to C4. That is, on the left side 74a and the right side 74b, the power generation efficiency can be further increased by widening the widths w 1 and w 2 of the first light diffusion portions 160a and 160b.
- FIG. 16 is a cross-sectional view showing the second light diffusion portions 160c and 160d, and is a cross-sectional view taken along the line BB of FIG.
- the second light diffusing portions 160c and 160d are provided on the light receiving surface 70a of the solar cell element 70 and are provided so as to cover substantially the entire side surface 70c corresponding to the upper side 74c and the lower side 74d. Accordingly, the second light diffusion portions 160c and 160d are provided so as to cover not only the upper half region of the light receiving surface 70a side but also the lower half region of the back surface 70b side of the side surface 70c.
- Second light diffusing section 160c, 160d, the height h 1 is provided so as to be slightly lower than the height h 0 and equal to or height h 0 of the bus bar electrode 22.
- the height h 1 of the second light diffusing parts 160c and 160d may be about 20 ⁇ m to 30 ⁇ m.
- the second light diffusion portions 160c and 160d are provided on the outer peripheral region C1 where the first conductivity type layer 16 is not provided, and in the outer peripheral region C1 of the effective region C2 where the first conductivity type layer 16 is provided. It is provided in the adjacent boundary region C3. Note that the adjacent region C4 corresponding to the upper side 74c and the lower side 74d where the second light diffusing portions 160c and 160d are provided is relatively far from the bus bar electrode 22 to which the tab wiring is connected, and thus is located on the left side 74a and the right side 74b. The current collection efficiency is lower than the corresponding adjacent region C4.
- the light diffusing unit 60 In such a region, even if the light diffusing unit 60 is provided, the light re-enters the adjacent region C4 having a low power generation contribution ratio. Therefore, the region where the light diffusing unit 60 is provided is reduced and the light is directly incident. However, it is easy to increase power generation efficiency. Therefore, in the upper side 74c and the lower side 74d, by reducing the widths w 3 and w 4 of the second light diffusion portions 160c and 160d, the area where the effective region C2 is covered by the second light diffusion portions 160c and 160d is reduced. . Thereby, the light which mainly enters into the outer periphery area
- the positions where the first i-type layer 14 and the first conductivity type layer 16 are provided as a whole are closer to the lower side 74d, and the outer peripheral region C1 corresponding to the upper side 74c.
- the width of the outer peripheral area C1 corresponding to the lower side 74d is narrower than the width of. Therefore, in this embodiment, the width w of the second light diffusion portion 160c which is relatively narrow the second width w 4 of the light diffusing portion 160d the width of the outer peripheral region C1 corresponding to the narrow lower side 74d, corresponding to the upper side 74c 3 is relatively wide.
- the width of the second light diffusion portions 160c and 160d in the short direction is changed according to the position of the effective region C2 contributing to power generation.
- the power generation efficiency can be further improved by changing the widths of the second light diffusing unit 160c and the second light diffusing unit 160d in accordance with the positions of the outer peripheral region C1 and the effective region C2.
- the light diffusing unit 60 is formed by screen printing as in the second embodiment. First, the process of forming the light diffusion part 60 will be described.
- FIG. 17 is a diagram illustrating a process of applying the light diffusing unit 60 according to the third embodiment by screen printing.
- the solar cell element 70 is disposed on the stage 90 provided with the groove 94.
- the printing plate 80 having the openings 82c and 82d is disposed on the light receiving surface 70a of the solar cell element 70, and the squeegee 84 is moved in the Y direction, whereby the paint 62 is placed on the light receiving surface 70a via the printing plate 80.
- the paint 62 is applied by forming the finger electrode and the bus bar electrode 22 on the light receiving surface 70a of the solar cell element 70 and then moving the squeegee 84 in the y direction in which the finger electrode extends.
- the printing plate 80 has a metal mesh 80 a and an emulsion 80 b arranged corresponding to the pattern of the printing plate 80.
- a region where the emulsion 80b is provided is a region where the paint 62 is not applied, and a region W where the emulsion 80b is not provided corresponds to the openings 82c and 82d of the printing plate 80.
- the opening area W is provided so that the outer periphery is larger than the first area E1 corresponding to the application area on the light receiving surface 70a, and the opening area W includes the first area E1 and the outer periphery of the first area E1. It extends over both of the second regions E2 provided so as to surround. By providing an opening also in a region corresponding to the second region E2, the paint 62 can be applied to the side surface 70c.
- the distance d between the light receiving surface 70 a and the mesh 80 a can be increased as compared with the case without the bus bar electrode 22, and the coating 62 can be thickened.
- the thickness of the coating material 62 to be applied can be increased by increasing the thickness of the emulsion 80b of the printing plate 80, if the thickness of the emulsion 80b is increased, there is a possibility that application failure such as inability to uniformly apply the coating material 62 may occur. is there. Therefore, by applying the paint 62 after providing the bus bar electrode 22, the thickness of the applied paint 62 can be increased while keeping the thickness of the emulsion 80b thin in order to prevent poor coating.
- the paint 62f pushed out by the squeegee 84 is likely to accumulate at a position corresponding to the second region E2.
- the collected paint 62f it is possible to apply a thick coating on the side surface 70c.
- the paint 62f may adhere to the stage. If it does so, a stage and the solar cell element 70 will adhere
- a stage 90 provided with a groove 94 at a position corresponding to the outer periphery of the solar cell element 70 is used.
- FIG. 18 is a top view showing the stage 90 on which the solar cell element 70 is placed.
- the stage 90 has a groove 94 provided at a position corresponding to the outer periphery of the solar cell element 70.
- the groove 94 has a first side wall 94a and a second side wall 94b.
- the first side wall 94 a is an inner side wall of the groove 94 and is slightly smaller than the outer periphery of the solar cell element 70.
- the second side wall 94 b is an outer side wall of the groove 94 and is provided slightly larger than the outer periphery of the solar cell element 70.
- a flat mounting surface 92 on which the solar cell element 70 is disposed is provided inside the groove 94.
- channel 94 corresponding to the octagonal shape which is the external shape of the solar cell element 70 is shown, it is not limited to the octagonal shape, and may be a rectangular or circular shape.
- FIG. 19 and 20 are diagrams showing a process of applying the light diffusing unit 60 by screen printing.
- FIG. 19 is a diagram showing a process of applying the coating 62e provided along the upper side 74c and the lower side 74d, and shows a cross section in a direction perpendicular to the bus bar electrode 22.
- FIG. By moving the squeegee 84 in the Y direction, the paint 62e can be applied to substantially the entire side surface 70c corresponding to the upper side 74c and the lower side 74d using the paint 62f accumulated in the second region E2.
- FIG. 20 is a diagram illustrating a process of applying the coating 62e provided along the left side 74a and the right side 74b, and shows a cross section in the direction along the bus bar electrode 22.
- FIG. 20 By moving the squeegee 84 in the Y direction, the paint 62e can be applied along the left side 74a and the right side 74b.
- the light diffusion portion 60 is formed by curing the coating 62e applied by screen printing.
- the solar cell element 70 on which the light diffusion portion 60 is formed is connected to another solar cell element 70 by the tab wiring 72.
- the tab wiring 72 is connected to the bus bar electrode 22 provided on the light receiving surface 70a of one solar cell element 70 and the bus bar electrode provided on the back surface of the other solar cell element.
- the present invention has been described with reference to the above-described embodiments.
- the present invention is not limited to the above-described embodiments, and the configurations of the embodiments are appropriately combined or replaced. Those are also included in the present invention. Further, it is possible to appropriately change the combination and processing order in each embodiment based on the knowledge of those skilled in the art and to add various modifications such as various design changes to each embodiment. Embodiments to which is added can also be included in the scope of the present invention.
- the convex curved surface formed by the light diffusing unit 60 has a smooth shape as shown in FIG. 3 is shown, but in order to further increase the scattering efficiency, a fine concave-convex structure is formed on the convex curved surface. May be provided.
- FIG. 21 is a cross-sectional view showing the light diffusing portion 60 according to the first modified example, and a plurality of convex portions 60a and concave portions 60b are formed as fine concavo-convex structures provided on the convex curved surface.
- a pattern in which minute concave portions or openings are arranged as a printing plate used for applying the coating 62 may be used.
- FIG. 22 is a diagram schematically showing the micropattern 88 of the printing plate according to the first modification, and the micropattern arranged in a hexagonal lattice pattern as shown in FIG. 22 in the area of the pattern 82 shown in FIG. 88 is formed.
- the light diffusing portions 60 arranged in the above are formed.
- the shape of the minute pattern 88 is not limited to a hexagonal lattice shape, and a pattern arranged in a tetragonal lattice shape, a pattern arranged randomly, or the like may be used.
- FIG. 23 is a cross-sectional view showing the light diffusing unit 60 according to the second modification, and a plurality of light diffusing units 60 are provided in the outer peripheral region C1.
- a plurality of light diffusing portions 60 having a convex curved surface in this manner, convex portions where the light diffusing portions 60 are provided and concave portions which are not provided can be formed, and light diffusibility can be improved.
- a printing plate in which the pattern area to which the paint is applied is made smaller than that in the second modification in the minute pattern 88 shown in FIG. A paint with a high viscosity may be used.
- FIG. 24 is a cross-sectional view showing a light diffusion portion 60 according to Modification 3.
- the light diffusion portion 60 is not provided on the side surface 70c, but is provided only on the light receiving surface 70a. Even in the case of such a structure, the light diffusing unit 60 forms a convex curved surface that gently draws an arc, so that the light diffusing unit 60 can enhance the light diffusibility. Moreover, compared with the case where the light-diffusion part 60 is formed compared with the case where it provides also on the side surface 70c, the quantity of the coating material to be used can be decreased.
- the light diffusing unit 60 may be provided on the back surface 70b of the solar cell element 70.
- FIG. 25 is a cross-sectional view showing a light diffusion portion 60 according to Modification 4.
- the light diffusing unit 60 is provided on the light receiving surface 70a, and first and second convex portions 60c and 60d are provided at both ends in the lateral direction (left and right direction on the paper surface).
- the light diffusing unit 60 having such a shape can be formed by using a highly viscous paint in screen printing, for example.
- the applied paint is pulled up by the edge of the printing plate, and both ends of the light diffusing portion 60 protrude. It is. In this way, a curved surface having a large curvature can be formed by projecting both ends of the light diffusing unit 60, and light incident on the light diffusing unit 60 can be diffused more efficiently.
- FIG. 26 is a cross-sectional view showing a light diffusion portion according to Modification 4.
- the light diffusion portion 60 covers the corner portion 70d and the side surface 70c and is also provided on the back surface 70b.
- the light diffusion portion 60 forms a convex curved surface that gently draws an arc on the side surface 70c and the back surface 70b.
- a coating material may be applied on the side surface 70c so that the outer peripheral regions of the light receiving surface 70a and the back surface 70b are covered with the applied coating material.
- the light diffusing portion 60 may be formed by applying paint on the light receiving surface 70a and then applying paint on the back surface 70b so that the paint applied on each surface overlaps the side surface 70c.
- the light diffusion portion 60 may not be provided on the side surface 70c, and may be provided only on the light receiving surface 70a and the back surface 70b of the solar cell element 70.
- FIG. 27 is a diagram illustrating a region where the light diffusion unit 60 according to the modification 5 is provided.
- the light diffusion portion 60 is not provided so as to cover the entire surface of the outer peripheral region C1, but is provided in a region corresponding to two sides among the four long sides 74 forming the outer peripheral region C1.
- the light diffusing unit 60 may be provided only in a region corresponding to one side among the four long sides 74 constituting the outer peripheral region C1, or the light diffusing unit 60 may be provided in a region corresponding to three sides.
- the light diffusing unit 60 may be provided only in a region corresponding to any one of the four short sides 76 constituting the outer peripheral region C1, one side, two sides, three sides, or four sides. In short, the light diffusing unit 60 may be provided in all or a part of the outer peripheral area C1 which is an invalid area.
- FIG. 28 is a diagram illustrating a region where the light diffusion unit 160 according to Modification 6 is provided.
- the light diffusion portion 160 is provided along the three long sides 74a to 74c. Therefore, it differs from the solar cell element 70 according to the third embodiment shown in FIG. 14 in that the light diffusion portion 160 is not provided along the lower side 74d. Since the range of the outer peripheral area C1 corresponding to the lower side 74d is narrower than the outer peripheral area C1 corresponding to the other long sides 74a to 74c, the contribution of improving the power generation efficiency by providing the light diffusion portion 160 is small. Therefore, the light diffusion portion 160 may not be provided in the outer peripheral region C1 corresponding to the lower side 74d. Thereby, the usage-amount of the coating material 62 can be reduced and manufacturing cost can be reduced.
- FIG. 29 is a diagram illustrating a region where the light diffusion unit 160 according to the modified example 7 is provided.
- the light diffusion portion 160 is provided along the two long sides 74a and 74b. Therefore, it differs from the solar cell element 70 shown in FIG. 28 in that the light diffusion portion 160 is not provided along the upper side 74c. Since the range of the outer peripheral region C1 corresponding to the upper side 74c is narrower than the outer peripheral region C1 corresponding to the left side 74a and the right side 74b, the contribution of improving the power generation efficiency by providing the light diffusion portion 160 is small.
- the light diffusing unit 160 is provided in the outer peripheral region C1 corresponding to the upper side 74c because the power generation efficiency of the adjacent region C4 where the light diffused by the light diffusing unit 160 re-enters is low. Even so, the contribution of power generation efficiency improvement due to re-incident light is small. Therefore, the light diffusion portion 160 may not be provided in the outer peripheral region C1 corresponding to the upper side 74c. Thereby, the usage-amount of the coating material 62 can further be reduced and manufacturing cost can be reduced.
- the light diffusing unit 160 is added to a rectangular solar cell element in which the light receiving surface has four sides. May be formed.
- the light diffusing unit 160 may be provided in a region corresponding to at least one of the four sides constituting the light receiving surface, and the light diffusing unit 60 may be formed over the entire outer peripheral region corresponding to the four sides.
- a pad printing method may be used in which a pyramid-shaped pad having a bottom area corresponding to the shape of the solar cell element 70 is prepared and the paint transferred from the printing plate 80 to the pad is applied to the outer peripheral area C1 of the light receiving surface 70a.
- the paint may be applied by a known technique such as letterpress printing or intaglio printing.
- the solar cell element 70 and the light diffusion portion 60 are shown as separate members, but the solar cell element itself may include the light diffusion portion 60 provided on the surface. Moreover, a solar cell element provided with the light-diffusion part 60 is good also as a solar cell module by sealing with a protective substrate, a back sheet, and a sealing layer.
- the first transparent electrode layer 18 provided on the light receiving surface 70a of the solar cell element 70 is located on the inner side of the region provided with the second transparent electrode layer 28 on the back surface 70b.
- One transparent electrode layer 18 was formed.
- the second transparent electrode layer 28 is formed so that the region of the second transparent electrode layer 28 provided on the back surface 70b is inside the region of the first transparent electrode layer 18 provided on the light receiving surface 70a. May be. In other words, the area relationship in which the transparent electrode layer is provided is reversed between the light receiving surface 70a and the back surface 70b, and the formation region of the second transparent electrode layer 28 is narrower than the first transparent electrode layer 18. It is good.
- the region where the first transparent electrode layer 18 is provided on the light receiving surface 70a but the second transparent electrode layer 28 is not provided on the back surface 70b side is a boundary region where incident light hardly contributes to power generation. It becomes.
- the power generation efficiency can be increased by providing the light diffusion portion 60 not only in the invalid region but also in the boundary region.
- the first conductivity type layer 16 provided on the light receiving surface 70a side is p-type amorphous silicon
- the second conductivity type layer 26 provided on the back surface 70b side is n-type.
- the base substrate 12 may be a p-type crystalline silicon substrate.
- the light diffusion portion 60 may be formed in the outer peripheral region or the ineffective region of the solar cell element by a structure or manufacturing method different from that of the solar cell element 70 shown in the above embodiment.
- a solar cell element 170 according to the fourth embodiment and a solar cell element 270 according to the fifth embodiment will be described as solar cell elements different from the above-described embodiment.
- FIG. 30 is a cross-sectional view showing a solar cell element 170 according to the fourth embodiment.
- the solar cell element 170 is a laser isolation type solar cell element in which the ineffective area C1 and the effective area C2 are separated by a groove 118 formed by irradiating the light receiving surface 170a with laser.
- the solar cell element 170 includes a base substrate 112, a first conductivity type region 114, a second conductivity type region 116, a first electrode 120, and a second electrode 130.
- the base substrate 112 is a crystalline semiconductor layer, for example, a p-type crystalline silicon substrate.
- the first conductivity type region 114 is a region made of n-type crystalline silicon, for example, an n-type diffusion region in which an n-type impurity is diffused.
- the first conductivity type region 114 is provided so as to cover one surface and the side surface of the base substrate 112.
- the second conductivity type region 116 is a region made of p-type crystalline silicon, for example, a p-type diffusion region in which a p-type impurity is diffused.
- the second conductivity type region 116 is provided so as to cover the other surface of the base substrate 112.
- the first electrode 120 is an electrode provided on the light receiving surface 170 a of the solar cell element 170, and is provided on the first conductivity type region 114.
- a transparent electrode layer may be provided between the first electrode 120 and the first conductivity type region 114.
- the second electrode 130 is an electrode provided on the back surface 170 b of the solar cell element 170 and is provided below the second conductivity type region 116.
- a groove 118 formed by removing the first conductivity type region 114 is provided on the light receiving surface 170a.
- the groove 118 is provided along the peripheral edge of the light receiving surface 170a, and separates the first conductivity type region 114 into two regions, an outer peripheral region C1 and an inner region C2.
- electrons and holes generated by the light incident on the light receiving surface 170a are recombined to prevent power generation efficiency from being lowered.
- the inner region C2 becomes an effective region where incident light contributes to power generation
- the outer peripheral region C1 is an ineffective region where incident light hardly contributes to power generation. It becomes.
- an aluminum electrode is bonded to one side to diffuse aluminum (Al) atoms. Return to the p-type silicon layer. Thereafter, a groove is formed by removing a part of the n-type layer by laser irradiation or the like so that the p-type layer on the aluminum electrode side and the n-type layer on the back surface thereof are not short-circuited on the side surface.
- FIG. 31 is a cross-sectional view showing the structure of a solar cell element 270 according to the fifth embodiment.
- the solar cell element 270 is a back junction type solar cell element in which no electrode is provided on the light receiving surface 270a and the first electrode 214 and the second electrode 215 are provided on the back surface 270b.
- the solar cell element 270 will be described mainly with respect to differences from the above-described embodiment.
- the solar cell element 270 includes a base substrate 210, a first stacked body 212, a second stacked body 213, a first electrode 214, a second electrode 215, a first insulating layer 216, and a third stacked body 217. .
- the base substrate 210 has a first main surface 210a on the light receiving surface 270a side and a second main surface 210b on the back surface 270b side.
- the base substrate 210 generates electrons and holes that become carriers mainly by light incident on the first main surface 210a.
- the base substrate 210 is a crystalline semiconductor substrate, for example, a crystalline silicon substrate such as a single crystal silicon substrate or a polycrystalline silicon substrate.
- an n-type single crystal silicon substrate is used as the base substrate 210.
- the third stacked body 217 includes a third i-type layer 217 i that is an intrinsic amorphous semiconductor, and a third conductivity-type layer 217 n having the same conductivity type as the base substrate 210.
- the third i-type layer 217i is i-type amorphous silicon containing hydrogen
- the third conductivity-type layer 217n is n-type amorphous silicon containing hydrogen.
- the first insulating layer 216 has a function as an antireflection film and a function as a protective film.
- the first insulating layer 216 is made of silicon oxide (SiO 2 ), silicon nitride (SiN), silicon oxynitride (SiON), or the like. It is a composed layer. Note that the first insulating layer 216 and the third stacked body 217 also have a function as a passivation layer of the base substrate 210.
- the first stacked body 212 and the second stacked body 213 are formed on the second main surface 210b of the base substrate 210.
- the 1st laminated body 212 and the 2nd laminated body 213 are formed in the comb-tooth shape, and are formed so that each comb tooth may be inserted mutually. Therefore, the region W1 where the first stacked body 212 is provided and the region W2 where the second stacked body 213 is provided are alternately and periodically arranged on the second major surface 210b.
- the first stacked body 212 includes a first i-type layer 212i provided on the second main surface 210b and a first conductivity type layer 212n provided on the first i-type layer 212i.
- the first i-type layer 212i is, for example, an i-type amorphous silicon layer containing hydrogen
- the first conductivity type layer 212n is an n-type amorphous silicon layer containing hydrogen.
- the second insulating layer 218 is formed in a region W3 corresponding to both end portions excluding the central portion of the region W1.
- the second insulating layer 218 is provided to prevent an electrical short between the first electrode 214 and the second electrode 215.
- the second insulating layer 218 is made of, for example, silicon oxide, silicon nitride, silicon oxynitride, or the like. Note that the second insulating layer 218 is preferably formed using silicon nitride containing hydrogen.
- the second stacked body 213 is formed on the region W2 where the first stacked body 212 is not formed and the region W3 where the second insulating layer 218 is formed.
- the second stacked body 213 includes a second i-type layer 213i provided on the second main surface 210b and a second conductivity type layer 213p provided on the second i-type layer 213i.
- the second i-type layer 213i is, for example, an i-type amorphous silicon layer containing hydrogen
- the second conductivity type layer 213p is a p-type amorphous silicon layer containing hydrogen.
- the first electrode 214 is formed on the first stacked body 212, and the second electrode 215 is formed on the second stacked body 213.
- a groove is formed in a region W5 between a region where the first electrode 214 is formed and a region where the second electrode 215 is formed, and both are electrically insulated.
- the first electrode 214 and the second electrode 215 are formed in a comb shape corresponding to the first stacked body 212 and the second stacked body 213, and are formed so that the respective comb teeth mesh with each other.
- the first electrode 214 and the second electrode 215 is formed by a four-layered laminate from the first conductive layer 219a to the fourth conductive layer 219d.
- the first conductive layer 219a is formed of a transparent electrode layer such as indium tin oxide (ITO), for example.
- the second conductive layer 219b and the third conductive layer 219c are formed of copper (Cu).
- the fourth conductive layer 219d is formed of tin (Sn).
- the first conductive layer 219a to the fourth conductive layer 219d are formed by a thin film forming method such as a sputtering method or a CVD method, a plating method, or the like. Specifically, the first conductive layer 219a and the second conductive layer 219b are formed by a sputtering method, and the third conductive layer 219c and the fourth conductive layer 219d are formed by a plating method.
- FIG. 32 is a diagram showing the back surface 270b of the solar cell element 270.
- the first electrode 214 includes a plurality of first finger electrodes 214a extending in parallel with the y direction, and a first bus bar electrode 214b extending in the x direction by connecting the plurality of first finger electrodes 214a.
- the second electrode 215 includes a plurality of second finger electrodes 215a extending in parallel in the y direction, and a second bus bar electrode 215b extending in the x direction by connecting the plurality of second finger electrodes 215a.
- the first finger electrodes 214a and the second finger electrodes 215a are alternately arranged so that the comb teeth mesh with each other.
- FIG. 33 is a view showing the light receiving surface 270a of the solar cell element 270.
- FIG. In this figure, the area
- the inner region C2 facing the region where the finger electrode is formed is an effective region, and the outer peripheral region C1 and the region C3 where the bus bar electrode is formed are more efficient in power generation than the effective region. Low invalid area.
- the light toward the invalid area can be effectively utilized by covering the outer peripheral area C1 serving as the invalid area and the area C3 where the bus bar electrode is formed with the light diffusion portion.
- the light diffusing portion is formed along the outer periphery of the solar cell element 270, and the width of the light diffusing portion in the short direction is widened at the sides 274a and 274b corresponding to the region C3 where the bus bar electrode is provided. That's fine.
- the power generation efficiency of the solar cell module can be improved.
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Abstract
Description
図4は、電極が形成された太陽電池素子70を示す図である。ベース基板12は、結晶質の半導体材料であり、例えば、シリコン、多結晶シリコン、砒化ガリウム(GaAs)、インジウム燐(InP)等の半導体基板である。なお、本実施形態では、ベース基板12として単結晶シリコン基板を用いた例を示す。したがって、後述する第1のi型層14、第1導電型層16、第2のi型層24、第2導電型層26もシリコン層とする。ただし、ベース基板12をシリコン以外の材料としてもよく、これらの層もシリコン層以外の材料としてもよい。
第2の実施形態に係る太陽電池モジュール100は、図1に示す第1の実施形態と同様の構造を有するが、光拡散部60をスクリーン印刷により形成する点が異なる。以下、第1の実施形態との相違点を中心に説明する。
図14は、第3の実施形態に係る太陽電池素子70を示す図である。第3の実施形態に係る太陽電池モジュールは、図1に示す第1の実施形態と同様の構造を有するが、光拡散部60の短手方向の幅w1~w4が、バスバー電極22の配置や太陽電池素子70を構成する発電層の構造に応じて異なる点で相違する。また、本実施形態では、有効領域C2のうち外周領域C1に隣接する境界領域C3にも光拡散部60を設ける。光拡散部60に入射して拡散された光は、主に境界領域C3のすぐ内側にある隣接領域C4に入射し発電に寄与することとなる。以下、第1の実施形態との相違点を中心に説明する。
図30は、第4の実施形態に係る太陽電池素子170を示す断面図である。太陽電池素子170は、受光面170aにレーザ照射して形成される溝118により、無効領域C1と有効領域C2が分離されるレーザアイソレーション型の太陽電池素子である。太陽電池素子170は、ベース基板112と、第1導電型領域114と、第2導電型領域116と、第1電極120と、第2電極130と、を備える。
図31は、第5の実施形態に係る太陽電池素子270の構造を示す断面図である。太陽電池素子270は、受光面270aに電極が設けられず、裏面270bに第1電極214および第2電極215が設けられる裏面接合型の太陽電池素子である。以下、太陽電池素子270について上述の実施形態との相違点を中心に示す。
Claims (13)
- 太陽電池素子と、
前記太陽電池素子の表面上に設けられた封止層と、
前記表面の無効領域と前記封止層との間に曲率を有するように設けられる光拡散部と、
を備える太陽電池モジュール。 - 前記表面には、前記無効領域の内側に有効領域が設けられており、
前記光拡散部は、前記有効領域の一部領域であって、前記無効領域に近い領域に設けられる請求項1に記載の太陽電池モジュール。 - 前記表面は、外周が四つの長辺と四つの短辺で囲まれる八角形の形状を有しており、
前記光拡散部は、前記四つの長辺のうち少なくとも一つの長辺に対応する無効領域に設けられる請求項1または2に記載の太陽電池モジュール。 - 前記光拡散部は、前記太陽電池素子の側面と前記表面とで形成される角部を避けて設けられる請求項1から3のいずれかに記載の太陽電池モジュール。
- 前記光拡散部の表面は、複数の凹部と凸部を有する凹凸構造が設けられる請求項1から4のいずれかに記載の太陽電池モジュール。
- 前記太陽電池素子は、
前記表面に設けられ、互いに並行して延びる複数のフィンガー電極と、
前記表面に設けられ、前記複数のフィンガー電極に交差して延びるバスバー電極と、
を有し、
前記表面は、前記フィンガー電極に並行する左辺および右辺と、前記バスバー電極に並行する上辺および下辺と、を有し、
前記光拡散部は、前記左辺および右辺に沿って設けられる第1光拡散部を有し、
前記第1光拡散部は、前記左辺または右辺に直交する短手方向の幅が、前記フィンガー電極の短手方向の幅よりも太い請求項1から5のいずれかに記載の太陽電池モジュール。 - 前記光拡散部は、前記上辺および下辺の少なくとも一方に沿って設けられる第2光拡散部をさらに有し、
前記第2光拡散部は、上辺または下辺に直交する短手方向の幅が、前記第1光拡散部の短手方向の幅よりも細い請求項6に記載の太陽電池モジュール。 - 表面を有する太陽電池素子と、前記太陽電池素子を封止する封止層と、を準備し、
前記表面の無効領域に対応したパターンを有する印刷版を介して、前記太陽電池素子よりも反射率の高い樹脂を含む塗料を前記無効領域に塗布し、
前記塗料が印刷された前記太陽電池素子を前記封止層で封止する太陽電池モジュールの製造方法。 - 前記太陽電池素子が載置されるステージであって、前記太陽電池素子の外周端が前記ステージと接触しないよう前記外周端に対応する位置に溝が形成されるステージに太陽電池素子を載せて、前記塗料を塗布する請求項8に記載の太陽電池モジュールの製造方法。
- 前記無効領域よりも外周が大きいパターンを有する印刷版を介して、前記塗料を塗布する請求項8または9に記載の太陽電池モジュールの製造方法。
- 前記太陽電池素子の表面に、互いに並行して延びる複数のフィンガー電極と、前記フィンガー電極に交差して延びるバスバー電極を形成した後に、前記フィンガー電極が延びる方向に向かって前記塗料を塗布する請求項8から10のいずれかに記載の太陽電池モジュールの製造方法。
- スクリーン印刷により前記無効領域に前記塗料を塗布する請求項8から11のいずれかに記載の太陽電池モジュールの製造方法。
- 前記無効領域に前記塗料を塗布した後に、前記無効領域に塗布された前記塗料の上に前記太陽電池素子よりも反射率の高い樹脂を含む塗料を重ねて塗布する請求項8から12のいずれかに記載の太陽電池モジュールの製造方法。
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Also Published As
Publication number | Publication date |
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US20150364616A1 (en) | 2015-12-17 |
US10840393B2 (en) | 2020-11-17 |
JP6697693B2 (ja) | 2020-05-27 |
JP6311999B2 (ja) | 2018-04-18 |
JPWO2014132312A1 (ja) | 2017-02-02 |
DE112013006731T5 (de) | 2015-11-12 |
JP2018113462A (ja) | 2018-07-19 |
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