WO2014109052A1 - Cuボール - Google Patents
Cuボール Download PDFInfo
- Publication number
- WO2014109052A1 WO2014109052A1 PCT/JP2013/050424 JP2013050424W WO2014109052A1 WO 2014109052 A1 WO2014109052 A1 WO 2014109052A1 JP 2013050424 W JP2013050424 W JP 2013050424W WO 2014109052 A1 WO2014109052 A1 WO 2014109052A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ball
- balls
- oxide film
- less
- sphericity
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 claims description 40
- 230000007547 defect Effects 0.000 abstract description 5
- 238000009736 wetting Methods 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 18
- 238000005259 measurement Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 229910052797 bismuth Inorganic materials 0.000 description 9
- 229910052745 lead Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000008188 pellet Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000005260 alpha ray Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/065—Spherical particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10234—Metallic balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
Definitions
- the present invention relates to a Cu ball used for soldering electronic parts and the like.
- BGA ball grid array
- An electronic component to which BGA is applied includes, for example, a semiconductor package.
- a semiconductor package a semiconductor chip having electrodes is sealed with a resin.
- Solder bumps are formed on the electrodes of the semiconductor chip. This solder bump is formed by joining a solder ball to an electrode of a semiconductor chip.
- a package to which BGA is applied is placed on the printed circuit board so that each solder bump comes into contact with the conductive land of the printed circuit board.
- solder bumps in which Cu balls are electrically joined to electrodes of electronic components with solder paste are being studied.
- the solder bump having the Cu ball can be supported by the Cu ball that does not melt at the melting point of the solder alloy even if the weight of the semiconductor package is applied to the solder bump. Therefore, the solder bump is not crushed by the weight of the package.
- Patent Document 1 is cited as a related technique.
- Patent Document 1 since the Cu ball disclosed in Patent Document 1 is manufactured by melting Cu pieces in a non-oxidizing atmosphere in order to increase the sphericity, high purity is required. There has been no study of alignment properties that represent accuracy.
- An object of the present invention is to provide a Cu ball having excellent alignment properties.
- the present inventors paid attention to the bonding form of the Cu balls in order to improve the alignment of the Cu balls. Specifically, in view of the fact that the Cu balls are electrically joined to the electrodes by the solder particles in the solder paste, the surface state of the Cu balls affects the wettability with the solder particles in the solder paste. Pay attention.
- the inventors of the present invention have the property that Cu balls are easily oxidized, and the thinner the oxide film on the surface of the Cu balls, the higher the wettability with the solder particles in the solder paste, and the better The knowledge which has alignment property was acquired.
- the present inventors examined increasing the alignment by defining the state of the oxide film of the Cu ball with some index.
- ⁇ Cu balls change to ocher when the thickness of the oxide film is increased to about 70 to 100 nm. Therefore, it is considered that alignment is improved by being defined by yellowness.
- a thick oxide film is formed only after being left for a long time in a hot and humid environment.
- Cu balls stored at about 20-40 ° C. do not form such a thick oxide film even in a high humidity environment. Therefore, even if such a Cu ball is defined by yellowness, it is unlikely that the alignment will be improved.
- the present inventors investigated this point, and obtained the knowledge that it is difficult to define by the yellowness as with the solder ball.
- Cu balls stored at about 20 to 40 ° C. have an oxide film thickness of about 40 nm or less. At this time, the Cu ball turns brown. For this reason, it seems that Cu ball
- the present inventors pay attention to the fact that the metallic luster is lost when the Cu ball is oxidized, and by specifying the Cu ball by the brightness as an index for defining the degree of oxidation of the Cu ball, the wetting defect of the Cu ball is reduced.
- the present inventors consider that the high sphericity of the Cu ball is required for the lightness to be measured more accurately, and by chance, the purity of the Cu ball is 99.995% or less.
- the present invention has been completed by obtaining knowledge that increases the sphericity.
- FIG. 1 is an SEM photograph of Cu balls manufactured using Cu pellets having a purity of 99.9%.
- FIG. 2 is an SEM photograph of a Cu ball manufactured using a Cu wire having a purity of 99.995% or less.
- FIG. 3 is a SEM photograph of a Cu ball manufactured using a Cu plate having a purity exceeding 99.995%.
- FIG. 4 is an optical micrograph of a solder bump on which a Cu ball of the present invention is mounted.
- FIG. 5 is an optical micrograph of solder bumps on which Cu balls of comparative examples are mounted.
- FIG. 6 is a graph showing the relationship between the L * value and the thickness of the oxide film.
- FIG. 7 is a graph showing the relationship between the b * value and the thickness of the oxide film.
- FIG. 8 is a graph showing the relationship between the a * value and the Cu ball oxide film thickness.
- FIG. 9 is a graph showing the relationship between the L * value and the average misalignment of the Cu balls after the Cu balls are mounted
- units (ppm, ppb, and%) relating to the composition of Cu balls represent ratios (mass ppm, mass ppb, and mass%) to the mass of Cu balls unless otherwise specified.
- the brightness is 55 or more
- the Cu ball according to the present invention has a brightness of 55 or more.
- lightness is, L * a * b * color system of L * value (hereinafter, simply sometimes referred to as L * value.) It is.
- L * value L * value
- the Cu ball oxide film is thin, and the alignment is improved.
- the accuracy of these confirmations is also increased.
- the height variation of the solder bump is measured by the laser wavelength meter, the measurement accuracy of the height variation is also improved. As a result, the inspection accuracy of the electronic component is improved and the product yield of the electronic component is improved.
- a thick oxide film mainly composed of Cu 2 O is formed on the surface of the Cu ball, resulting in poor wettability with solder particles in the solder paste, resulting in alignment properties. descend.
- a thick oxide film is formed, the Cu ball loses its metallic luster, so that the inspection accuracy of electronic parts deteriorates. Also, the formation of a thick oxide film reduces the electrical conductivity and thermal conductivity of the Cu ball.
- the brightness is preferably 57 or more, more preferably 59 or more.
- the brightness due to the metallic luster inherent in Cu is the upper limit, and is preferably 70 or less.
- bowl is 99.995% or less.
- bowl which concerns on this invention is 99.995% or less. That is, the Cu ball according to the present invention has a content of an element excluding Cu (hereinafter, appropriately referred to as “impurity element”) of 50 ppm or more.
- the Cu material formed into small pieces of a predetermined shape is melted by heating, and the molten Cu becomes spherical due to surface tension, which solidifies into a Cu ball.
- the molten Cu solidifies from the liquid state, crystal grains grow in the spherical molten Cu.
- the impurity elements serve as crystal nuclei and growth of crystal grains is suppressed. Therefore, the spherical molten Cu becomes a Cu ball having a high sphericity due to the fine crystal grains whose growth is suppressed.
- the lower limit of purity is not particularly limited, but is preferably 99.9% from the viewpoint of suppressing deterioration of the electrical conductivity and thermal conductivity of Cu balls due to a decrease in purity. That is, the content of impurities in Cu balls excluding Cu is preferably 1000 ppm or less in total.
- the Cu ball according to the present invention preferably contains Pb and Bi as impurities among impurities. These contents are preferably 1 ppm or more in total. Usually, the content of Pb and / or Bi in the Cu material is 1 ppm or more in total. In the production of Cu balls, Cu is not heated to a temperature higher than the boiling points of Pb and Bi. That is, the contents of Pb and Bi are not greatly reduced. Thus, since Pb and Bi remain in a certain amount even after the production of Cu balls, the content measurement error is small.
- Pb and Bi are important elements for estimating the content of impurity elements.
- the total content of Pb and Bi is preferably 1 ppm or more.
- the content of Pb and / or Bi is more preferably 10 ppm or more in total.
- an upper limit is not specifically limited, From a viewpoint of suppressing deterioration of the electrical conductivity of Cu ball
- the Cu ball according to the present invention preferably has a thickness of the oxide film of 8 nm or less.
- the film thickness is 8 nm or less, since the oxide film is thin, poor wetting is suppressed and alignment is improved.
- the solder paste for joining the Cu ball to the electrode usually contains a flux. Flux dissolves and removes a thin oxide film of 8 nm or less with rosin as its main component. Therefore, since the Cu ball according to the present invention can suppress poor wetting, the (self) alignment property is excellent.
- the Cu ball moves to the center of the electrode when the soft solder paste becomes uniform over the entire surface of the electrode due to surface tension during reflow.
- the thickness of the oxide film is 8 nm or less, the electrical conductivity and thermal conductivity of the Cu ball are increased.
- the thickness of the oxide film is preferably 7 nm or less, more preferably 6 nm or less.
- the lower limit value of the thickness of the oxide film is not particularly limited, and the thinner the thickness, the lower the wetting defect.
- the shape of the Cu ball according to the present invention preferably has a higher sphericity from the viewpoint of reducing lightness measurement errors. Moreover, when the sphericity is high, an error in the standoff height can be reduced. If the sphericity of the Cu ball is less than 0.95, the Cu ball has an indefinite shape, so that bumps with non-uniform height are formed at the time of bump formation, and the possibility of occurrence of poor bonding increases.
- the sphericity is more preferably 0.990 or more. In the present invention, the sphericity represents a deviation from the sphere.
- the sphericity represents a deviation from the sphere.
- the sphericity is obtained by various methods such as the least square center method (LSC method), the minimum region center method (MZC method), the maximum inscribed center method (MIC method), and the minimum circumscribed circle center method (MCC method). It is done.
- LSC method least square center method
- MZC method minimum region center method
- MIC method maximum inscribed center method
- MCC method minimum circumscribed circle center method
- the diameter of the Cu ball according to the present invention is preferably 1 to 1000 ⁇ m. When it is in this range, spherical Cu balls are stably produced, and connection short-circuiting when terminals are at a narrow pitch is suppressed. When the diameter of the Cu ball is 1 ⁇ m or more, a spherical Cu ball can be produced stably. Further, when the diameter of the Cu ball is 1000 ⁇ m or less, a connection short circuit when the terminals are at a narrow pitch can be suppressed.
- the “Cu ball” may be referred to as “Cu powder”.
- the diameter of the Cu ball is generally 1 to 300 ⁇ m.
- a Cu material as a material is placed on a heat-resistant plate such as ceramic (hereinafter referred to as “heat-resistant plate”), and is heated together with the heat-resistant plate in a furnace.
- the heat-resistant plate is provided with a number of circular grooves whose bottoms are hemispherical. The diameter and depth of the groove are appropriately set according to the particle diameter of the Cu ball. For example, the diameter is 0.8 mm and the depth is 0.88 mm.
- chip-shaped Cu material hereinafter referred to as “chip material” obtained by cutting the Cu thin wire is put into the groove of the heat-resistant plate one by one.
- the heat-resistant plate in which the chip material is put in the groove is heated to about 1000 ° C. in a furnace filled with ammonia decomposition gas and subjected to heat treatment for 30 to 60 minutes. At this time, if the furnace temperature becomes equal to or higher than the melting point of Cu, the chip material melts and becomes spherical. Thereafter, the inside of the furnace is cooled and Cu balls are formed in the grooves of the heat-resistant plate.
- a molten Cu droplet is dropped from an orifice provided at the bottom of the crucible, and this droplet is cooled to form a Cu ball, or a Cu cut metal by thermal plasma.
- a granulation method that heats to 1000 ° C. or higher.
- pellets, wires, pillars, and the like can be used as the Cu material that is a raw material of the Cu balls.
- the purity of the Cu material may be 99 to 99.995% from the viewpoint of not reducing the purity of the Cu ball too much.
- the Cu ball according to the present invention forms an oxide film on the surface by reacting with oxygen in the atmosphere depending on the temperature and humidity of the storage environment. For this reason, it is preferable to store Cu balls immediately after production at room temperature and normal humidity when stored in the air.
- normal temperature and normal humidity are in the range of 5 to 35 ° C. and 45 to 85%, respectively, according to JIS Z 8703.
- inert gas such as He and Ar, nitrogen gas, or a clean room.
- regulated by this invention may be applied to Cu column or Cu pillar.
- bowl which concerns on this invention can be used for the solder joint of an electronic component by electrically joining to an electrode with a solder paste.
- the ⁇ dose is reduced by using a low ⁇ wire.
- the Cu material is heated at about 800 to 1000 ° C. for 30 to 60 minutes when the conventional atomizing method is used. A process of raising the temperature to about 1300 ° C. is performed. Further, the manufactured Cu ball may be separately reheated at 800 to 900 ° C. which is lower than the melting point of Cu. Thereby, radioactive isotopes such as 210 Po are volatilized and the ⁇ dose is reduced.
- the sphericity was measured with a CNC image measurement system.
- the apparatus is an Ultra Quick Vision, ULTRA QV350-PRO manufactured by Mitutoyo Corporation.
- FIG. 1 is an SEM photograph of Cu balls manufactured using Cu pellets having a purity of 99.9%.
- FIG. 2 is an SEM photograph of a Cu ball manufactured using a Cu wire having a purity of 99.995% or less.
- FIG. 3 is a SEM photograph of a Cu ball manufactured using a Cu plate having a purity exceeding 99.995%. The magnification of the SEM photograph is 100 times.
- the Cu balls using Cu pellets having a purity of 99.9% and Cu wires having a purity of 99.995% or less exhibited a sphericity of 0.990 or more.
- the sphericity of the Cu ball using a Cu plate having a purity exceeding 99.995% was less than 0.95.
- Example 1 For the Cu balls produced as described above, the brightness immediately after production (less than 1 minute after production) and the thickness of the oxide film were measured under the following conditions. Then, Cu balls are mounted on each of the 30 electrodes printed with a 100 ⁇ m thick metal mask with a solder paste (Senju Metal Industry Co., Ltd .: M705-GRN360-K2-V), and the Cu balls are applied to the electrodes by reflow. Solder bumps were made by bonding. Reflow was performed under conditions of a peak temperature of 245 ° C. and an N 2 atmosphere. Since the oxygen concentration is 100 ppm or less, the increase in the oxide film thickness due to reflow does not affect the measurement of brightness.
- a solder paste Sud Metal Industry Co., Ltd .: M705-GRN360-K2-V
- the average misregistration is a value for objectively evaluating the alignment property numerically. The results are shown in Table 2. Details of each measurement and each evaluation are as shown below.
- the brightness is measured by using SPECTROTOPOMETER CM-3500d made by MINOLTA, measuring the spectral transmittance according to JIS Z 8722 “Color Measurement Method-Reflection and Transmission Object Color” with a D65 light source and a 10-degree field of view. It was obtained from the values (L * , a * , b * ).
- the color values (L * , a * , b * ) are defined in JIS Z 8729 “Color Display Method-L * a * b * Color System and L * u * v * Color System”. It is what.
- the film thickness of the oxide film of the Cu ball was measured by the following apparatus and conditions. Incidentally, the oxide film thickness measurements were determined by the terms of SiO 2.
- FIG. 4 is an optical micrograph of the solder bump 10 on which the Cu ball 11 of the present invention is mounted.
- FIG. 5 is an optical micrograph of the solder bump 20 on which the Cu ball 21 of the comparative example is mounted.
- the Cu ball 11 according to the present invention is mounted at the center of the electrode 13, and no positional deviation occurs.
- the Cu ball 21 of the comparative example protrudes from the electrode 23, and a positional deviation occurs.
- the case where the Cu ball 21 protrudes from the electrode 23 even a little is handled as the occurrence of the positional deviation.
- the alignment performance was evaluated based on the number of Cu ball misalignments.
- ⁇ No misalignment occurred in all 30 pieces.
- X One or more position shift occurred.
- Measurement of average misalignment The distance between the center of the electrode and the center of the Cu ball bump after reflow was measured for 30 solder bumps by measuring the distance between circle centers using VH-S30 manufactured by KEYENCE. The average of the 30 measurement results is the misalignment average. In this example, when the average misalignment is 30 ⁇ m or less, the alignment property is excellent during mounting.
- Examples 2 to 6 and Comparative Examples 1 to 4 In Examples 2 to 6 and Comparative Examples 1 to 4, the same evaluation as in Example 1 was performed on Cu balls after being stored under the storage conditions shown in Table 2. The results are shown in Table 2.
- room temperature is 20 ° C. Further, the humidity when measured at “room temperature” and “200 ° C.” is 50%.
- FIG. 6 is a graph showing the relationship between the L * value and the thickness of the oxide film. As shown in FIG. 6, when the L * value was 55 or more, the thickness of the oxide film was 8 nm or less, and the alignment property was good. However, when the L * value was less than 55, the thickness of the oxide film exceeded 8 nm, and the alignment property was x.
- FIG. 7 is a graph showing the relationship between the b * value and the thickness of the oxide film.
- the yellowness showed no correlation with the thickness of the oxide film. For this reason, it became clear that Cu balls cannot be determined using yellowness.
- FIG. 8 is a graph showing the relationship between the a * value and the thickness of the oxide film. As a result, the redness did not show a correlation with the thickness of the oxide film. For this reason, it became clear that Cu balls cannot be determined using redness.
- FIG. 9 is a graph showing the relationship between the L * value and the average displacement of Cu balls when Cu balls are mounted on electrodes. The higher the L * value, the smaller the average displacement of the Cu balls. For this reason, it has been found that there is a correlation between the L * value and the displacement of the Cu ball when the Cu ball is mounted on the electrode. Further, as shown in FIG. 9, it was found that when the L * value is 55 or more, at least the average misalignment is 30 ⁇ m or less.
- the Cu ball according to the present invention can determine the degree of oxidation of the Cu ball based on the L * value.
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Abstract
Description
(1)純度が99.995%以下であり、明度が55以上であることを特徴とするCuボール。
(3)真球度が0.95以上である、上記(1)または上記(2)に記載のCuボール。
本発明に係るCuボールは明度が55以上である。ここに、明度とは、L*a*b*表色系のL*値(以下、単に、L*値と言うこともある。)である。明度が55以上であるとCuボールの酸化膜が薄いことになり、アライメント性が高まる。CCDカメラなどで撮影した画像によりはんだボールの欠損や位置ずれが確認される場合、これらの確認の精度も高まる。また、レーザ波長計によりはんだバンプの高さばらつきが測定される場合、高さばらつきの測定精度も向上する。この結果、電子部品の検査精度が向上して電子部品の製品歩留まりが向上する。
・Cuボールの純度が99.995%以下
本発明に係るCuボールは純度が99.995%以下である。つまり、本発明に係るCuボールはCuを除く元素(以下、適宜、「不純物元素」という。)の含有量が50ppm以上である。Cuボールを構成するCuの純度がこの範囲であると、Cuボールの真球度が高まるための十分な量の結晶核が溶融Cu中に確保されることになる。また、真球度が高まると、明度の測定誤差が低減される。Cuボールの純度が低いと真球度が高まる理由は以下のように詳述される。
本発明に係るCuボールは酸化膜の膜厚が8nm以下であることが好ましい。膜厚が8nm以下であると、酸化膜が薄いために濡れ不良が抑制されてアライメント性が高まる。Cuボールを電極と接合するはんだペーストは通常フラックスを含有する。フラックスはその主成分であるロジンにより8nm以下の薄い酸化膜を溶解除去する。したがって、本発明に係るCuボールは濡れ不良を抑制することができるため、(セルフ)アライメント性が優れる。つまり、Cuボールの搭載直後は電極の中央からわずかに外れていても、リフロー時は軟化したはんだペーストが表面張力により電極の全面で均一になる際に、Cuボールが電極の中央に移動する。また、酸化膜の膜厚が8nm以下であると、Cuボールの電気伝導度や熱伝導率が高まる。
本発明に係るCuボールの形状は、明度の測定誤差が低減する観点から、真球度が高い方が好ましい。また、真球度が高いと、スタンドオフ高さの誤差を低減することができる。Cuボールの真球度が0.95未満であると、Cuボールが不定形状になるため、バンプ形成時に高さが不均一なバンプが形成され、接合不良が発生する可能性が高まる。真球度は、より好ましくは0.990以上である。本発明において、真球度とは真球からのずれを表す。本発明において真球度とは、真球からのずれを表す。真球度は、例えば、最小二乗中心法(LSC法)、最小領域中心法(MZC法)、最大内接中心法(MIC法)、最小外接円中心法(MCC法)など種々の方法で求められる。
本発明に係るCuボールの直径は1~1000μmであることが好ましい。この範囲にあると、球状のCuボールが安定して製造され、また、端子間が狭ピッチである場合の接続短絡が抑制される。Cuボールの直径が1μm以上であると、球状のCuボールを安定して製造できる。また、Cuボールの直径が1000μm以下であると、端子間が狭ピッチである場合の接続短絡を抑制することができる。ここで、例えば、本発明に係るCuボールがCuペースト中のCuとして用いられるような場合、「Cuボール」は「Cuパウダ」と称されてもよい。「Cuボール」が「Cuパウダ」と称されるような場合、一般的に、Cuボールの直径は1~300μmである。
材料となるCu材はセラミックのような耐熱性の板(以下、「耐熱板」という。)に置かれ、耐熱板とともに炉中で加熱される。耐熱板には底部が半球状となった多数の円形の溝が設けられている。溝の直径や深さは、Cuボールの粒径に応じて適宜設定されており、例えば、直径が0.8mmであり、深さが0.88mmである。また、Cu細線が切断されて得られたチップ形状のCu材(以下、「チップ材」という。)は、耐熱板の溝内に一個ずつ投入される。溝内にチップ材が投入された耐熱板は、アンモニア分解ガスが充填された炉内で1000℃程度に昇温され、30~60分間加熱処理が行われる。このとき炉内温度がCuの融点以上になると、チップ材は溶融して球状となる。その後、炉内が冷却され、耐熱板の溝内でCuボールが成形される。
本発明に係るCuボールは、保管環境の温度や湿度によっては雰囲気中の酸素と反応して表面に酸化膜を形成する。このため、製造直後のCuボールは、大気中で保管する場合には常温、常湿で保管することが好ましい。本発明においては、常温および常湿は、JIS Z 8703に従い、各々5~35℃、45~85%の範囲とする。また、Cuボールの酸化を極力抑制する場合には、HeやArなどの不活性ガス、窒素ガス、またはクリーンルームと同じ環境下で保存することが特に好ましい。
なお、本発明に係るCuボールは、はんだペーストで電極に電気的に接合されることにより、電子部品のはんだ継手に用いられることができる。
真球度はCNC画像測定システムで測定された。装置は、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350-PROである。
前述のように作製されたCuボールについて、作製直後(作製してから1分未満。)の明度および酸化膜の膜厚が以下の条件で測定された。そして、はんだペースト(千住金属工業株式会社製:M705-GRN360-K2-V)が100μm厚のメタルマスクにより印刷された30個の電極の各々にCuボールが搭載され、リフローによりCuボールが電極に接合されてはんだバンプが作製された。リフローは、ピーク温度245℃、N2雰囲気の条件で行われた。なお、酸素濃度は100ppm以下であるため、リフローによる酸化膜厚の増加は明度の測定に影響を及ぼさない。その後、作製されたはんだバンプについて、明度および酸化膜の膜厚の測定、アライメント性の評価、ならびに位置ずれ平均の測定が行われた。位置ずれ平均は、アライメント性を数値化して客観的に評価するための値である。結果は表2に示される。各測定および各評価の詳細は以下に示されるとおりである。
明度は、MINOLTA製 SPECTROPHOTOMETER CM-3500dを用いて、D65光源、10度視野でJIS Z 8722「色の測定方法-反射及び透過物体色」に準じて分光透過率を測定し、色彩値(L*,a*,b*)から求められた。なお、色彩値(L*、a*、b*)は、JIS Z 8729「色の表示方法-L*a*b*表色系及びL*u*v*表色系」にて規定されているものである。
Cuボールの酸化膜の膜厚は、以下の装置および条件で測定された。なお、酸化膜厚測定値はSiO2換算により求めた。
測定条件:Beam Voltage:10kV,試料電流:10nA(Arイオン銃を用いたスパッタ深さの測定法は、ISO/TR 15969に準拠。)
・アライメント性の評価
はんだバンプが形成された30個の電極のすべてが光学顕微鏡により40倍で撮影された。図4は、本発明のCuボール11が搭載されたはんだバンプ10の光学顕微鏡写真である。図5は、比較例のCuボール21が搭載されたはんだバンプ20の光学顕微鏡写真である。これらの写真は、はんだペースト12、22が印刷された電極13、23にCuボール11、21が搭載された状態を、Cuボール11、21側から撮影した写真である。写真の倍率は40倍である。
×:1個以上位置ずれが発生した。
電極の中心とリフロー後Cuボールバンプの中心との間の距離は、KEYENCE製VH-S30を用いた円心間距離測定により、30個のはんだバンプについて測定された。30個の測定結果の平均が位置ずれ平均である。本実施例では、位置ずれ平均が30μm以下であれば、実装時に優れたアライメント性を有することとした。
実施例2~6および比較例1~4では、表2に示す保管条件で保管した後のCuボールについて、実施例1と同様の評価が行われた。結果が表2に示される。
Claims (5)
- 純度が99.995%以下であり、明度が55以上であることを特徴とするCuボール。
- 表面の酸化膜の膜厚が8nm以下である、請求項1に記載のCuボール。
- 真球度が0.95以上である、請求項1または2に記載のCuボール。
- 直径が1~1000μmである、請求項1~3のいずれか1項に記載のCuボール。
- 請求項1~4のいずれか1項に記載のCuボールを使用したはんだ継手。
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CN201710742046.4A CN107579007A (zh) | 2013-01-11 | 2013-01-11 | 将铜球接合于电极的方法以及选择铜球的方法 |
US14/759,360 US20150336216A1 (en) | 2013-01-11 | 2013-01-11 | Cu BALL |
JP2013539041A JP5447745B1 (ja) | 2013-01-11 | 2013-01-11 | Cuボール |
EP13870796.3A EP2944400A4 (en) | 2013-01-11 | 2013-01-11 | CU BALL |
KR1020167001997A KR102036959B1 (ko) | 2013-01-11 | 2013-01-11 | Cu 볼을 전극에 접합하는 방법 및 Cu 볼을 선정하는 방법 |
PCT/JP2013/050424 WO2014109052A1 (ja) | 2013-01-11 | 2013-01-11 | Cuボール |
CN201380070219.2A CN104994974A (zh) | 2013-01-11 | 2013-01-11 | 铜球 |
KR1020157021286A KR20150097808A (ko) | 2013-01-11 | 2013-01-11 | Cu 볼 |
TW102148968A TWI595948B (zh) | 2013-01-11 | 2013-12-30 | A copper ball, a method of bonding the electrode to the electrode, and a method of selecting the same |
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JP5850199B1 (ja) * | 2015-06-29 | 2016-02-03 | 千住金属工業株式会社 | はんだ材料、はんだ継手およびはんだ材料の検査方法 |
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JP2016068123A (ja) * | 2014-09-30 | 2016-05-09 | 住友金属鉱山株式会社 | Au−Sn−Ag系はんだ合金及びこれを用いて封止若しくは接合された電子機器並びに該電子機器を搭載した電子装置 |
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JP6717356B2 (ja) * | 2018-03-27 | 2020-07-01 | 日立金属株式会社 | 金属粒子の製造方法 |
WO2020241436A1 (ja) * | 2019-05-27 | 2020-12-03 | 千住金属工業株式会社 | はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、およびはんだ継手 |
KR20230036062A (ko) | 2020-07-08 | 2023-03-14 | 미쓰이금속광업주식회사 | 미세 금속 선상체 |
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- 2013-01-11 CN CN201710742046.4A patent/CN107579007A/zh active Pending
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Also Published As
Publication number | Publication date |
---|---|
EP2944400A4 (en) | 2016-10-05 |
KR20160015397A (ko) | 2016-02-12 |
KR20150097808A (ko) | 2015-08-26 |
EP2944400A1 (en) | 2015-11-18 |
KR102036959B1 (ko) | 2019-10-25 |
TWI595948B (zh) | 2017-08-21 |
JPWO2014109052A1 (ja) | 2017-01-19 |
CN104994974A (zh) | 2015-10-21 |
TW201446362A (zh) | 2014-12-16 |
US20150336216A1 (en) | 2015-11-26 |
JP5447745B1 (ja) | 2014-03-19 |
CN107579007A (zh) | 2018-01-12 |
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