WO2014071552A1 - Microwave excited supercritical drying apparatus and method therefor - Google Patents

Microwave excited supercritical drying apparatus and method therefor Download PDF

Info

Publication number
WO2014071552A1
WO2014071552A1 PCT/CN2012/084136 CN2012084136W WO2014071552A1 WO 2014071552 A1 WO2014071552 A1 WO 2014071552A1 CN 2012084136 W CN2012084136 W CN 2012084136W WO 2014071552 A1 WO2014071552 A1 WO 2014071552A1
Authority
WO
WIPO (PCT)
Prior art keywords
microwave
quartz
supercritical drying
excited
water
Prior art date
Application number
PCT/CN2012/084136
Other languages
French (fr)
Chinese (zh)
Inventor
于明岩
景玉鹏
郭晓龙
赵士瑞
徐昕伟
Original Assignee
中国科学院微电子研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国科学院微电子研究所 filed Critical 中国科学院微电子研究所
Priority to PCT/CN2012/084136 priority Critical patent/WO2014071552A1/en
Publication of WO2014071552A1 publication Critical patent/WO2014071552A1/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/32—Drying solid materials or objects by processes involving the application of heat by development of heat within the materials or objects to be dried, e.g. by fermentation or other microbiological action
    • F26B3/34—Drying solid materials or objects by processes involving the application of heat by development of heat within the materials or objects to be dried, e.g. by fermentation or other microbiological action by using electrical effects
    • F26B3/347—Electromagnetic heating, e.g. induction heating or heating using microwave energy

Definitions

  • the present invention relates to the field of nano-scale photoresist pattern drying technology in the semiconductor industry, and more particularly to a microwave-excited supercritical drying device and method.
  • critical point drying method that is, cleaning and drying the device with supercritical carbon dioxide
  • freezing-sublimation method A method of adding a surfactant to a water-based solvent, and the like.
  • the above methods are inevitably caused to break, fall or stick to the nano pattern.
  • the present invention provides a microwave-excited supercritical drying apparatus, comprising: a chamber 3; a quartz device 4 disposed in the chamber 3 for holding the silicon wafer 5 to be tested; and disposed outside the chamber 3 and a vacuum pumping device 1 connected to the quartz device 4; a metal turntable 9 disposed on the inner side wall of the chamber 3; a motor 10 disposed in the chamber 3 and connected to the metal turntable 9; and a microwave generating device 11 disposed in the chamber 3. And a yellow light source 12 disposed in the chamber 3.
  • the quartz device 4 has a quartz cell and a quartz cap for holding the silicon wafer 5 to be tested, and the quartz cap covers the quartz cell.
  • the quartz cover has a hole having a diameter of 15 mm to facilitate evaporation of water vapor during heating.
  • one end of the vacuum pumping device 1 is connected to the vacuum device, and the other end is connected to the quartz device 4 through the plastic hose 2.
  • the vacuum pumping device 1 When the water reaches the boiling point and enters the rotary supercritical, the vacuum pumping device 1 will be in the quartz device 4. The water is pumped out to shorten the evaporation time of the water.
  • the plastic hose 2 is a vacuum pumping outlet passage.
  • the metal turntable 9 is fixed on the inner side wall of the chamber 3 of the supercritical drying device, and is connected to the motor 10, and no object is placed thereon for dispersing the standing wave during rotation, so that The silicon wafer 5 is heated uniformly without chipping.
  • the motor 10 is used to drive the metal turntable 9 to rotate.
  • the microwave generating device 11 is a microwave transmitting device for emitting microwave waves.
  • the yellow light source 12 is used to provide a yellow light source to the chamber to prevent the photoresist pattern on the silicon wafer from being affected by the external light source.
  • the yellow light source 12 is a yellow fluorescent lamp.
  • the supercritical drying device further includes a control panel disposed outside the chamber 3, and the microwave generating device 11 and the yellow light source 12 are both fixed in the chamber 3 behind the control panel.
  • the time display device 6, the time setting knob 7, and the motor rotation speed setting knob 8 are disposed on the control panel, wherein the time display device 6 is configured to display the time set by the experiment, and the time setting The knob 7 is used to set the experiment time, and the motor speed setting knob 8 is used to set the motor speed.
  • the present invention also provides a microwave-excited supercritical drying method, comprising: Step 1: Developing a silicon wafer into a quartz device, wherein the quartz device contains a developing solution; Step 2: Developing After completion, replace the developer in the quartz device with deionized water; Step 3: Place the replaced quartz device containing the silicon wafer into the chamber of the supercritical drying device, and use the supercritical drying device The electric field is used to heat the silicon wafer; Step 4: When the water reaches the boiling point and enters the rotating supercritical, the vacuum pumping device extracts the water in the quartz device and continues to heat the silicon wafer by using the alternating electric field in the supercritical drying device. Step 5: Wait for the water on the silicon wafer to completely evaporate. After drying, remove the silicon wafer.
  • the quartz device described in the first step has a quartz tank for placing a silicon wafer to be dried, and a quartz lid covering the quartz tank.
  • the quartz cover has a hole having a diameter of 15 mm to facilitate evaporation of water vapor during heating.
  • the ionized water is replaced with boiling water to make the silicon wafer in the boiling water bath, and then it is contained in the step 3.
  • the boiling water quartz device is placed in a chamber of the supercritical drying device for heating.
  • the frequency of the alternating electric field described in the steps 3 and 4 is 2 to 100 GHz.
  • the alternating electric field has a frequency of 2 to 4 GHz.
  • the water on the silicon wafer is completely evaporated as described in the step 5, and the microwave heating time is not more than 30 seconds after the vacuum pumping, and the water can be completely evaporated.
  • the present invention has the following beneficial effects:
  • the microwave can make the water enter a rotating supercritical state, thereby breaking the water molecule cluster structure and eliminating the surface tension of the water, the fracture of the nanostructure of the fine structure during the drying process is solved, Problems such as lodging or adhesion.
  • the apparatus and method for drying a nanopattern after development provides a forward-looking method for the drying process in a semiconductor 22 nm process or even a 16 nm process.
  • the device and method for drying the nano-pattern after development provided by the invention can be used as a novel green cleaning and drying process for the next generation semiconductor, which not only reduces the consumption of water resources, but also reduces the consumption of energy, and conforms to the development of ITRS. trend. Therefore, microwave drying has good development and application prospects in terms of environmental protection and economic benefits, and it is expected to be applied to the microelectronic processing production line.
  • Figure 1 is a schematic illustration of the movement of water molecules in an alternating electric field.
  • FIG. 2 is a schematic illustration of a microwave excited supercritical drying apparatus provided by the present invention.
  • FIG. 3 is a flow diagram of a microwave excited supercritical drying process implemented using the apparatus of Figure 2.
  • FIG. 4 is an electron microscopy scan of a HSQ glue line having a width of 14.9 nm dried by a supercritical drying apparatus in accordance with an embodiment of the present invention.
  • Figure 5 is a scanning electron micrograph of a photoresist dot matrix having a diameter of 20 nm x 20 nm x 260 nm in height by a supercritical drying apparatus in accordance with an embodiment of the present invention.
  • Figure 6 is an electron microscopy scan of a HSQ glue line having a width of 32.9 nm by microwave drying using a supercritical drying apparatus in accordance with an embodiment of the present invention.
  • Fig. 1 is a schematic diagram showing the movement of water molecules in an alternating electric field.
  • Water is a polar molecule, and polar molecules do not exhibit polarity when there is no applied electric field.
  • the water molecules Under the condition of applying an alternating electric field, the water molecules will form an orderly arrangement along the direction of the electric field force, that is, the water molecules will be rapidly polarized under the applied alternating electric field, and the stronger the applied alternating electric field, the more the polarization is. Strong; the higher the frequency of the applied alternating electric field, the faster the polarization of water molecules repeatedly turning.
  • the kinetic energy of the molecular thermal motion increases, that is, the heat increases, and the temperature of the water also increases, realizing the conversion of electromagnetic energy to thermal energy. Therefore, water molecules can absorb electromagnetic waves and convert electromagnetic energy into heat to absorb them. As the direction of the applied alternating electric field changes continuously, the polarity of the water molecules also reverses. Finally, in the alternating electric field, the rotation rapidly, the kinetic energy increases, and the vaporization rapidly rises from the liquid state, avoiding the generation of the gas-liquid interface, achieving good Drying effect, achieving no damage and drying.
  • FIG. 2 shows a schematic diagram of a microwave-excited supercritical drying device provided by the present invention, the device comprising a chamber 3, a quartz device 4 disposed in the chamber 3 for holding the silicon wafer 5 to be tested, and a setting a vacuum pumping device 1 outside the chamber 3 and communicating with the quartz device 4, a metal turntable 9 disposed on the inner side wall of the chamber 3, a motor 10 disposed in the chamber 3 and connected to the metal turntable 9, and being disposed in the chamber 3
  • the microwave generating device 11 inside, the yellow light source 12 disposed in the chamber 3, and the control panel disposed outside the chamber 3, the microwave generating device 11 and the yellow light source 12 are both fixed in the chamber 3 behind the control panel.
  • the time display device 6, the time setting knob 7 and the motor rotation speed setting knob 8 are arranged on the control panel, wherein the time display device 6 is used to display the time set by the experiment, and the time setting knob 7 is used to set the experiment time, the motor The speed setting knob 8 is used to set the motor speed.
  • the vacuum pumping device 1 One end of the vacuum pumping device 1 is connected to the vacuum device, and the other end is connected to the quartz device 4 through the plastic hose 2.
  • the vacuum pumping device 1 extracts the water in the quartz device 4 to shorten the evaporation time of the water.
  • the plastic hose 2 is a vacuum pumping outlet passage.
  • the chamber 3 is an experimental chamber, and the quartz device 4 is placed in the chamber 3, and the inside thereof carries the silicon wafer 5 to be tested.
  • the quartz device 4 has a quartz tank and a quartz cover for holding in the quartz tank
  • the silicon wafer 5 is covered with a quartz cover over the quartz bath, and the quartz cover has a hole having a diameter of about 15 mm to facilitate evaporation of water vapor during heating.
  • the metal turntable 9 is disposed on the inner side wall of the chamber 3 of the supercritical drying device and is connected to the motor 10, and no object is placed thereon for dispersing the standing wave during the rotation, so that the silicon wafer to be tested is heated uniformly. No cracking occurred.
  • the motor 10 is used to drive the metal turntable 9 to rotate.
  • the microwave generating device 11 is a microwave transmitting device for emitting microwaves.
  • the yellow light source 12 is used to provide a yellow light source to the chamber to prevent the photoresist pattern on the silicon wafer from being affected by the external light source.
  • the yellow light source 12 can be a yellow fluorescent light.
  • the function of the metal turntable 9 is to break up the standing wave so that the silicon wafer to be tested is heated uniformly without chipping. Therefore, during the entire drying process, the silicon wafer itself is not adversely affected.
  • the implementation principle is as follows: The microwave is an electromagnetic wave, taking the frequency of 2.45 GHZ as an example, the wavelength is 12.23 cm, and a standing wave is generated at a half wavelength. If a certain portion of the silicon wafer to be tested is located at a half wavelength, the silicon to be tested is made. The local temperature of the sheet rises, causing the silicon wafer to be tested to be broken.
  • the metal turntable 9 Since the metal does not absorb electromagnetic waves, after the metal turntable 9 is added, the metal turntable 9 can reflect electromagnetic waves, so that the microwave cannot generate standing waves in the supercritical drying device, thereby eliminating the influence of standing waves.
  • the present invention has been subjected to a comparative test. If the supercritical drying device does not have a metal turntable, the silicon wafer to be tested is highly susceptible to chipping after being heated for a period of time.
  • Step 1 Developing the silicon wafer into a quartz device, wherein the quartz device contains a developing solution; wherein, the quartz device has a quartz tank and a quartz cover, and the quartz tank is for holding the silicon wafer to be dried, and the quartz cover is covered with Above the quartz tank, the quartz cover has a hole with a diameter of about 15 mm to facilitate evaporation of water vapor during heating.
  • Step 2 After development, replace the developer in the quartz device with deionized water;
  • Step 3 Place the replaced quartz device containing the silicon wafer into the chamber of the supercritical drying device shown in Fig. 1.
  • the silicon wafer is heated by the alternating electric field in the supercritical drying device;
  • Step 4 When the water reaches the boiling point and enters the rotary supercritical, the vacuum pumping device extracts the water in the quartz device and continues to use the supercritical drying device.
  • Step 5 The water on the silicon wafer is completely evaporated, and after drying, the silicon wafer is taken out.
  • the ionized water may be replaced with boiling water to make the silicon wafer in a boiling water bath, and then it will be contained in step 3.
  • the boiling water quartz device is placed in a chamber of the supercritical drying device for heating.
  • the frequency of the alternating electric field described in steps 3 and 4 is 2-100 GHz, preferably 2-4 GHz.
  • the water on the silicon wafer is completely evaporated in step 5, and the microwave heating time is not more than 30 seconds after vacuum pumping, and the water can be completely evaporated.
  • the following uses the supercritical drying device provided by the present invention to respectively form a HSQ glue line with a width of 14.9 nm, a photoresist dot matrix with a diameter of 20 nm x 20 nm x a height of 260 nm, and a HSQ glue line with a width of 32.9 nm and a size of 21.8> ⁇ 17.9.
  • a HSQ glue line with a width of 14.9 nm
  • a photoresist dot matrix with a diameter of 20 nm x 20 nm x a height of 260 nm
  • a HSQ glue line with a width of 32.9 nm and a size of 21.8> ⁇ 17.9.
  • Example 1 Microwave drying of HSQ glue lines with a width of 14.9 nm
  • Step 1 Developing a 2 inch, 4 inch or 8 inch silicon wafer with a photoresist pattern in a quartz device, which has a developer suitable for HSQ glue;
  • Step 2 After development is completed, the developer in the quartz device is replaced with deionized water;
  • Step 3 The replaced silicon wafer-equipped quartz device is placed in the microwave-excited supercritical drying device shown in FIG. In the chamber, the alternating electric field in the supercritical drying device is used for heating.
  • the specific heating principle is as follows: The water molecules are polar molecules, and the polarity of the water molecules changes as the direction of the alternating electric field changes rapidly.
  • the frequency of the alternating electric field It is 2-100 GHz, preferably 2-4 GHz.
  • Step 4 When the water reaches the boiling point and enters the rotating supercritical state, the vacuum pumping device extracts the water in the quartz device to shorten the evaporation time of the water, and continues to use the alternating electric field in the supercritical drying device for heating; the alternating electric field
  • the frequency is 2-100 GHz, preferably 2-4 GHz.
  • Step 5 The water on the silicon wafer is completely evaporated, and after drying, the silicon wafer is taken out. Under normal circumstances, it is verified by experiments that after vacuum pumping, the microwave heating time does not exceed 30s, and the water is Can be completely evaporated.
  • FIG. 4 shows an electron microscopy scan of a HSQ glue line having a width of 14.9 nm by microwave drying using a supercritical drying apparatus in accordance with an embodiment of the present invention.
  • FIG. 5 to FIG. 7 show the electron micrographs of the respective microwave drying.
  • FIG. 5 shows an electron microscopy scan of a photoresist dot array having a diameter of 20 nm x 20 nm > ⁇ height 260 nm using a supercritical drying device in accordance with an embodiment of the present invention
  • FIG. 6 illustrates the use of super in accordance with an embodiment of the present invention.
  • FIG. 7 shows an electron microscope of a photoresist grid having a size of 21.8 x 7.9 nm using a supercritical drying apparatus in accordance with an embodiment of the present invention. Scan photos.
  • the microwave-excited supercritical drying device and method provided by the invention are used for drying the nano-pattern of the microstructure after development, and can solve the problems of breakage, lodging or adhesion of the nano-pattern of the fine structure during the drying process. .
  • the present invention is applicable to the drying of nanopatterns of all fine structures, especially the drying of nano-patterns or nano-lines of 22/16/14 nm size.

Abstract

Provided are a microwave excited supercritical drying apparatus and a method therefor, wherein the drying apparatus comprises: a cavity (3), a quartz device (4) provide in the cavity (3) for supporting a silicon wafer (5) to be tested; a vacuum pumping device (1) provided outside the cavity (3) and in communication with the quartz device (4); a metal turntable (9) provided on an inside wall of the cavity (3); an electric motor (10) provided inside the cavity (3) and connected to the metal turntable (9); a microwave generating device (11) provided inside the cavity (3); and a yellow light source (12) provided inside the cavity (3). The drying method using the supercritical drying apparatus solves problems such as breakage, lodging, or adhesion of nano patterns of a fine structure which occur during the drying process.

Description

一种微波激发的超临界干燥装置及方法 技术领域 本发明涉及半导体行业中纳米级光刻胶图形干燥技术领域， 尤其是 一种微波激发的超临界干燥装置及方法。  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of nano-scale photoresist pattern drying technology in the semiconductor industry, and more particularly to a microwave-excited supercritical drying device and method.
背景技术 在微电子器件的制造过程中， 随着特征尺寸的进一歩减小和结构复 杂程度的进一歩提高， 纳米器件结构的塌陷已成为日益严重的问题。 结 构塌陷的原因有很多， 例如受到外界力的作用、 结构自身的应力、 较弱 的结构材料以及干燥过程中的表面张力等。 排出其它因素， 干燥过程就 成了非常关键的歩骤。 BACKGROUND OF THE INVENTION In the manufacturing process of microelectronic devices, as the feature size is further reduced and the complexity of the structure is further improved, the collapse of the nano device structure has become an increasingly serious problem. There are many reasons for structural collapse, such as the effects of external forces, the stress of the structure itself, the weaker structural materials, and the surface tension during drying. By drying out other factors, the drying process becomes a critical step.
以水为主要溶剂清洗之后的器件在传统的干燥方法中， 其机械性结 构较弱的部分及高深宽比的光刻胶图形会遭到破坏。 表面张力是器件在 湿法腐蚀后干燥过程中实际存在的一个问题， 因为在干燥过程中， 溶液 的表面张力会把柔顺的结构拉向衬底。 当干燥过程完成以后， 该结构和 衬底就会牢固地粘在一起， 这是导致纳米器件结构的塌陷及器件失效的 主要原因之一。  Devices cleaned with water as the main solvent In the conventional drying method, the mechanically weaker portions and the high aspect ratio photoresist patterns are destroyed. Surface tension is a problem that actually exists in the drying process of a device after wet etching because the surface tension of the solution pulls the compliant structure toward the substrate during the drying process. When the drying process is completed, the structure and the substrate are firmly bonded together, which is one of the main causes of collapse of the nanodevice structure and device failure.
为了解决纳米级光刻胶图形所遇到的干燥难题， 很多专家学者提出 了不同的解决方法， 比如： 临界点干燥法， 即利用超临界二氧化碳对器 件进行清洗和干燥； 冷冻-升华法； 向水基溶剂中添加表面活性剂的方法 等。 但是当图形尺寸达到 22nm及以下技术节点时， 以上方法均不可避 免的会造成纳米图形的断裂、 倒伏或粘连。  In order to solve the drying problem encountered in nano-scale photoresist patterns, many experts have proposed different solutions, such as: critical point drying method, that is, cleaning and drying the device with supercritical carbon dioxide; freezing-sublimation method; A method of adding a surfactant to a water-based solvent, and the like. However, when the pattern size reaches the technical node of 22 nm or less, the above methods are inevitably caused to break, fall or stick to the nano pattern.
发明内容 Summary of the invention
(一） 要解决的技术问题 有鉴于此， 本发明的主要目的在于提供一种微波激发的超临界干燥 装置及方法， 以解决微细结构的纳米图形在干燥过程中发生的断裂、 倒 伏或粘连等问题。 (1) Technical problems to be solved In view of the above, it is a primary object of the present invention to provide a microwave-excited supercritical drying apparatus and method for solving problems such as breakage, lodging or adhesion of a nanostructure of a fine structure during drying.
(二） 技术方案  (ii) Technical solutions
为达到上述目的， 本发明提供了一种微波激发的超临界干燥装置， 包括： 腔室 3 ; 设置于腔室 3内盛载待测硅片 5的石英装置 4; 设置于 腔室 3外且与石英装置 4连通的真空抽水装置 1 ; 设置于腔室 3内侧壁 上的金属转盘 9; 设置于腔室 3内与金属转盘 9连接的电机 10; 设置于 腔室 3内的微波发生装置 11 ; 以及设置于腔室 3内的黄色光源 12。  In order to achieve the above object, the present invention provides a microwave-excited supercritical drying apparatus, comprising: a chamber 3; a quartz device 4 disposed in the chamber 3 for holding the silicon wafer 5 to be tested; and disposed outside the chamber 3 and a vacuum pumping device 1 connected to the quartz device 4; a metal turntable 9 disposed on the inner side wall of the chamber 3; a motor 10 disposed in the chamber 3 and connected to the metal turntable 9; and a microwave generating device 11 disposed in the chamber 3. And a yellow light source 12 disposed in the chamber 3.
上述方案中， 所述石英装置 4具有石英槽和石英盖， 石英槽中用于 盛载待测硅片 5， 石英盖覆盖于石英槽之上。 所述石英盖上有直径为 15mm的孔， 便于加热时水蒸汽的蒸发。  In the above solution, the quartz device 4 has a quartz cell and a quartz cap for holding the silicon wafer 5 to be tested, and the quartz cap covers the quartz cell. The quartz cover has a hole having a diameter of 15 mm to facilitate evaporation of water vapor during heating.
上述方案中， 所述真空抽水装置 1的一端与真空装置连接， 另一端 通过塑料软管 2连通于石英装置 4， 在水达到沸点进入旋转超临界时， 真空抽水装置 1将石英装置 4中的水抽出， 以缩短水分蒸发时间。 所述 塑料软管 2是真空抽水导出通道。  In the above solution, one end of the vacuum pumping device 1 is connected to the vacuum device, and the other end is connected to the quartz device 4 through the plastic hose 2. When the water reaches the boiling point and enters the rotary supercritical, the vacuum pumping device 1 will be in the quartz device 4. The water is pumped out to shorten the evaporation time of the water. The plastic hose 2 is a vacuum pumping outlet passage.
上述方案中， 所述金属转盘 9固定于该超临界干燥装置的腔室 3内 侧壁上， 并与电机 10 相连接， 其上不放置任何物体， 用于在旋转时打 散驻波， 使得待测硅片 5加热均匀， 不发生碎裂。  In the above solution, the metal turntable 9 is fixed on the inner side wall of the chamber 3 of the supercritical drying device, and is connected to the motor 10, and no object is placed thereon for dispersing the standing wave during rotation, so that The silicon wafer 5 is heated uniformly without chipping.
上述方案中， 所述电机 10用于带动金属转盘 9旋转。  In the above solution, the motor 10 is used to drive the metal turntable 9 to rotate.
上述方案中， 所述微波发生装置 11 是微波发射装置， 用于发出微 波。  In the above solution, the microwave generating device 11 is a microwave transmitting device for emitting microwave waves.
上述方案中， 所述黄色光源 12 用于给腔室提供黄色光源， 避免硅 片上的光刻胶图形受到外界光源的影响。 所述黄色光源 12 是黄色荧光 灯。  In the above solution, the yellow light source 12 is used to provide a yellow light source to the chamber to prevent the photoresist pattern on the silicon wafer from being affected by the external light source. The yellow light source 12 is a yellow fluorescent lamp.
上述方案中， 该超临界干燥装置还包括一设置于腔室 3外部的控制 面板，微波发生装置 11与黄色光源 12均固定在控制面板后的腔室 3内。 在该控制面板上设置有时间显示装置 6、 时间设置旋钮 7和电机转速设 置旋钮 8， 其中， 时间显示装置 6用于显示实验所设定的时间， 时间设 置旋钮 7用于设置实验时间， 电机转速设置旋钮 8用于设置电机转速。 为达到上述目的， 本发明还提供了一种微波激发的超临界干燥方 法， 包括： 歩骤 1 : 将硅片放入石英装置中显影， 该石英装置中盛有显 影液； 歩骤 2: 显影完毕后， 用去离子水置换掉石英装置中的显影液； 歩骤 3 :将置换后的盛有硅片的石英装置放入超临界干燥装置的腔室中， 利用超临界干燥装置中的交变电场对硅片进行加热； 歩骤 4: 在水达到 沸点进入旋转超临界时， 真空抽水装置将石英装置中的水抽出， 并继续 利用超临界干燥装置中的交变电场对硅片进行加热； 歩骤 5 : 待硅片上 的水分完全蒸发， 干燥完毕， 取出硅片。 In the above solution, the supercritical drying device further includes a control panel disposed outside the chamber 3, and the microwave generating device 11 and the yellow light source 12 are both fixed in the chamber 3 behind the control panel. The time display device 6, the time setting knob 7, and the motor rotation speed setting knob 8 are disposed on the control panel, wherein the time display device 6 is configured to display the time set by the experiment, and the time setting The knob 7 is used to set the experiment time, and the motor speed setting knob 8 is used to set the motor speed. In order to achieve the above object, the present invention also provides a microwave-excited supercritical drying method, comprising: Step 1: Developing a silicon wafer into a quartz device, wherein the quartz device contains a developing solution; Step 2: Developing After completion, replace the developer in the quartz device with deionized water; Step 3: Place the replaced quartz device containing the silicon wafer into the chamber of the supercritical drying device, and use the supercritical drying device The electric field is used to heat the silicon wafer; Step 4: When the water reaches the boiling point and enters the rotating supercritical, the vacuum pumping device extracts the water in the quartz device and continues to heat the silicon wafer by using the alternating electric field in the supercritical drying device. Step 5: Wait for the water on the silicon wafer to completely evaporate. After drying, remove the silicon wafer.
上述方案中， 歩骤 1中所述石英装置具有石英槽和石英盖， 石英槽 用于放置待干燥的硅片， 石英盖覆盖于石英槽之上。 所述石英盖上有直 径为 15mm的孔， 便于加热时水蒸汽的蒸发。  In the above solution, the quartz device described in the first step has a quartz tank for placing a silicon wafer to be dried, and a quartz lid covering the quartz tank. The quartz cover has a hole having a diameter of 15 mm to facilitate evaporation of water vapor during heating.
上述方案中， 歩骤 2中所述用去离子水置换掉石英装置中的显影液 之后， 进一歩用沸水置换出去离子水， 使硅片处于沸水浴中， 然后在歩 骤 3中将盛有沸水的石英装置放入超临界干燥装置的腔室中加热。  In the above solution, after replacing the developer in the quartz device with deionized water as described in the step 2, the ionized water is replaced with boiling water to make the silicon wafer in the boiling water bath, and then it is contained in the step 3. The boiling water quartz device is placed in a chamber of the supercritical drying device for heating.
上述方案中，歩骤 3和歩骤 4中所述交变电场的频率为 2至 100GHz。 所述交变电场的频率为 2至 4GHz。  In the above scheme, the frequency of the alternating electric field described in the steps 3 and 4 is 2 to 100 GHz. The alternating electric field has a frequency of 2 to 4 GHz.
上述方案中， 歩骤 5中所述待硅片上的水分完全蒸发， 是在真空抽 水后微波加热时间不超过 30秒， 水分即可完全蒸发。  In the above solution, the water on the silicon wafer is completely evaporated as described in the step 5, and the microwave heating time is not more than 30 seconds after the vacuum pumping, and the water can be completely evaporated.
(三） 有益效果  (3) Beneficial effects
从上述技术方案可以看出， 本发明具有以下有益效果：  As can be seen from the above technical solutions, the present invention has the following beneficial effects:
1、 利用本发明， 由于微波可以使水进入一种旋转的超临界状态， 从而打破水分子团簇结构， 消除水的表面张力， 所以解决了微细结构的 纳米图形在干燥过程中发生的断裂、 倒伏或粘连等问题。  1. By using the invention, since the microwave can make the water enter a rotating supercritical state, thereby breaking the water molecule cluster structure and eliminating the surface tension of the water, the fracture of the nanostructure of the fine structure during the drying process is solved, Problems such as lodging or adhesion.
2、 在传统的离心甩干机干燥过程中， 需要消耗大量的去离子水， 且是在甩干的过程中， 水的表面张力对微细的光刻胶结构造成破坏， 并 且耗电量大。 本发明提供的对显影之后纳米图形进行干燥的装置及方 法， 能够干燥 15 纳米的线条而不发生倒伏现象， 有效的解决干燥过程 中结构塌陷的问题， 并能提供干净和干燥的器件， 而且效率较高， 干燥 时间很短， 耗能较少。 2. In the drying process of the conventional centrifugal dryer, a large amount of deionized water is consumed, and in the process of drying, the surface tension of the water causes damage to the fine photoresist structure and consumes a large amount of electricity. The device and the method for drying the nano-pattern after development capable of drying the 15 nm line without lodging phenomenon, effectively solving the problem of structural collapse during the drying process, and providing a clean and dry device, and the efficiency Higher, dry The time is short and the energy consumption is less.
3、 因为目前传统的甩干或氮***吹干， 都会给 22nm乃至 16nm以 下图形造成结构上的破坏， 并且目前为止没有一种良好的干燥方法来干 燥 22nm节点以下的微细线条。 本发明提供的对显影之后纳米图形进行 干燥的装置及方法， 为半导体 22纳米工艺乃至 16纳米工艺中的干燥过 程提供了一种前瞻性方法。  3. Because the conventional dry or nitrogen gun is blown dry, it will cause structural damage to the pattern below 22nm or even 16nm. So far, there is no good drying method to dry the fine lines below the 22nm node. The apparatus and method for drying a nanopattern after development provided by the present invention provides a forward-looking method for the drying process in a semiconductor 22 nm process or even a 16 nm process.
4、 本发明提供的对显影之后纳米图形进行干燥的装置及方法， 可 以作为下一代半导体新型绿色清洗和干燥工艺， 不仅减少了对水资源的 消耗、 而且降低对能源的消耗， 符合 ITRS的发展趋势。 因此无论从环 保问题还是经济效益来说， 微波干燥都有良好的发展和应用前景， 有望 运用在微电子加工生产线上。  4. The device and method for drying the nano-pattern after development provided by the invention can be used as a novel green cleaning and drying process for the next generation semiconductor, which not only reduces the consumption of water resources, but also reduces the consumption of energy, and conforms to the development of ITRS. trend. Therefore, microwave drying has good development and application prospects in terms of environmental protection and economic benefits, and it is expected to be applied to the microelectronic processing production line.
附图说明 图 1是水分子在交变电场中的运动情况的示意图。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of the movement of water molecules in an alternating electric field.
图 2是本发明提供的微波激发的超临界干燥装置的示意图。  2 is a schematic illustration of a microwave excited supercritical drying apparatus provided by the present invention.
图 3是利用图 2所示装置实现的微波激发的超临界干燥方法的流程 图。  Figure 3 is a flow diagram of a microwave excited supercritical drying process implemented using the apparatus of Figure 2.
图 4 是依照本发明实施例利用超临界干燥装置微波干燥宽度为 14.9nm的 HSQ胶线条的电镜扫描照片。  4 is an electron microscopy scan of a HSQ glue line having a width of 14.9 nm dried by a supercritical drying apparatus in accordance with an embodiment of the present invention.
图 5是依照本发明实施例利用超临界干燥装置微波干燥直径 20nmx 间隔 20nmx高度 260nm的光刻胶点阵的电镜扫描照片。  Figure 5 is a scanning electron micrograph of a photoresist dot matrix having a diameter of 20 nm x 20 nm x 260 nm in height by a supercritical drying apparatus in accordance with an embodiment of the present invention.
图 6 是依照本发明实施例利用超临界干燥装置微波干燥宽度为 32.9nm的 HSQ胶线条的电镜扫描照片。  Figure 6 is an electron microscopy scan of a HSQ glue line having a width of 32.9 nm by microwave drying using a supercritical drying apparatus in accordance with an embodiment of the present invention.
图 7 是依照本发明实施例利用超临界干燥装置微波干燥尺寸为 21.8x l7.9nm的光刻胶格栅的电镜扫描照片。 具体实施方式 为使本发明的目的、 技术方案和优点更加清楚明白， 以下结合具体 实施例， 并参照附图， 对本发明进一歩详细说明。 7 is an electron microscopy scan of a photoresist grid having a size of 21.8 x 7.9 nm using a supercritical drying apparatus in accordance with an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION In order to make the objects, the technical solutions and the advantages of the present invention more comprehensible, the present invention will be described in detail below with reference to the accompanying drawings.
下面介绍本发明的实现原理。 如图 1所示， 图 1是水分子在交变电 场中的运动情况的示意图。 水属于极性分子， 极性分子在没有外加电场 时不显示极性。 在外加交变电场的条件下， 水分子会沿着电场力的方向 形成有序排列， 即水分子会在外加交变电场下迅速极化， 且外加交变电 场越强， 极化作用也越强； 外加交变电场的频率越高， 水分子反复转向 的极化也就越快。 此时， 分子热运动的动能增大， 也就是热量增加， 水 的温度也随之升高， 实现了电磁能向热能的转换。 因此， 水分子能够吸 收电磁波， 将电磁波能量转换成为热量而吸收。 随着外加交变电场方向 不断改变， 水分子的极性也随之不断翻转， 最终在交变电场中， 快速旋 转， 动能增加， 从液态快速升温汽化， 避免气液界面的产生， 达到良好 的干燥效果， 实现无损伤干燥。  The implementation principle of the present invention will be described below. As shown in Fig. 1, Fig. 1 is a schematic diagram showing the movement of water molecules in an alternating electric field. Water is a polar molecule, and polar molecules do not exhibit polarity when there is no applied electric field. Under the condition of applying an alternating electric field, the water molecules will form an orderly arrangement along the direction of the electric field force, that is, the water molecules will be rapidly polarized under the applied alternating electric field, and the stronger the applied alternating electric field, the more the polarization is. Strong; the higher the frequency of the applied alternating electric field, the faster the polarization of water molecules repeatedly turning. At this time, the kinetic energy of the molecular thermal motion increases, that is, the heat increases, and the temperature of the water also increases, realizing the conversion of electromagnetic energy to thermal energy. Therefore, water molecules can absorb electromagnetic waves and convert electromagnetic energy into heat to absorb them. As the direction of the applied alternating electric field changes continuously, the polarity of the water molecules also reverses. Finally, in the alternating electric field, the rotation rapidly, the kinetic energy increases, and the vaporization rapidly rises from the liquid state, avoiding the generation of the gas-liquid interface, achieving good Drying effect, achieving no damage and drying.
基于上述实现原理， 图 2示出了本发明提供的微波激发的超临界干 燥装置的示意图， 该装置包括腔室 3、 设置于腔室 3 内盛载待测硅片 5 的石英装置 4、 设置于腔室 3外且与石英装置 4连通的真空抽水装置 1、 设置于腔室 3内侧壁上的金属转盘 9、 设置于腔室 3内与金属转盘 9连 接的电机 10、 设置于腔室 3内的微波发生装置 11、 设置于腔室 3内的 黄色光源 12， 以及设置于腔室 3外部的控制面板， 微波发生装置 11与 黄色光源 12均固定在控制面板后的腔室 3 内。 在该控制面板上设置有 时间显示装置 6、 时间设置旋钮 7和电机转速设置旋钮 8， 其中， 时间 显示装置 6用于显示实验所设定的时间， 时间设置旋钮 7用于设置实验 时间， 电机转速设置旋钮 8用于设置电机转速。  Based on the above implementation principle, FIG. 2 shows a schematic diagram of a microwave-excited supercritical drying device provided by the present invention, the device comprising a chamber 3, a quartz device 4 disposed in the chamber 3 for holding the silicon wafer 5 to be tested, and a setting a vacuum pumping device 1 outside the chamber 3 and communicating with the quartz device 4, a metal turntable 9 disposed on the inner side wall of the chamber 3, a motor 10 disposed in the chamber 3 and connected to the metal turntable 9, and being disposed in the chamber 3 The microwave generating device 11 inside, the yellow light source 12 disposed in the chamber 3, and the control panel disposed outside the chamber 3, the microwave generating device 11 and the yellow light source 12 are both fixed in the chamber 3 behind the control panel. The time display device 6, the time setting knob 7 and the motor rotation speed setting knob 8 are arranged on the control panel, wherein the time display device 6 is used to display the time set by the experiment, and the time setting knob 7 is used to set the experiment time, the motor The speed setting knob 8 is used to set the motor speed.
真空抽水装置 1的一端与真空装置连接， 另一端通过塑料软管 2连 通于石英装置 4。 在水达到沸点进入旋转超临界时， 真空抽水装置 1将 石英装置 4中的水抽出， 以缩短水分蒸发时间。 塑料软管 2是真空抽水 导出通道。 腔室 3为实验腔室， 石英装置 4放在腔室 3中， 其内部盛载 有待测硅片 5。 石英装置 4具有石英槽和石英盖， 石英槽中用于盛载待 测硅片 5， 石英盖覆盖于石英槽之上， 且石英盖上有直径约为 15mm的 孔， 便于加热时水蒸汽的蒸发。 金属转盘 9设置于该超临界干燥装置的 腔室 3 内侧壁上， 并与电机 10相连接， 其上不放置任何物体， 用于在 旋转时打散驻波， 使得待测硅片加热均匀， 不发生碎裂。 电机 10用于 带动金属转盘 9旋转。 微波发生装置 11是微波发射装置， 用于发出微 波。 黄色光源 12 用于给腔室提供黄色光源， 避免硅片上的光刻胶图形 受到外界光源的影响。 黄色光源 12可以是黄色荧光灯。 One end of the vacuum pumping device 1 is connected to the vacuum device, and the other end is connected to the quartz device 4 through the plastic hose 2. When the water reaches the boiling point and enters the rotary supercritical state, the vacuum pumping device 1 extracts the water in the quartz device 4 to shorten the evaporation time of the water. The plastic hose 2 is a vacuum pumping outlet passage. The chamber 3 is an experimental chamber, and the quartz device 4 is placed in the chamber 3, and the inside thereof carries the silicon wafer 5 to be tested. The quartz device 4 has a quartz tank and a quartz cover for holding in the quartz tank The silicon wafer 5 is covered with a quartz cover over the quartz bath, and the quartz cover has a hole having a diameter of about 15 mm to facilitate evaporation of water vapor during heating. The metal turntable 9 is disposed on the inner side wall of the chamber 3 of the supercritical drying device and is connected to the motor 10, and no object is placed thereon for dispersing the standing wave during the rotation, so that the silicon wafer to be tested is heated uniformly. No cracking occurred. The motor 10 is used to drive the metal turntable 9 to rotate. The microwave generating device 11 is a microwave transmitting device for emitting microwaves. The yellow light source 12 is used to provide a yellow light source to the chamber to prevent the photoresist pattern on the silicon wafer from being affected by the external light source. The yellow light source 12 can be a yellow fluorescent light.
在本发明提供的微波激发的超临界干燥装置中， 金属转盘 9的作用 是打散驻波， 使得待测硅片加热均匀， 不发生碎裂。 所以在整个干燥过 程中， 不会对待测硅片本身产生不利影响。 其实现原理如下： 微波是电 磁波， 以频率为 2.45GHZ为例， 其波长为 12.23cm， 在半波长处产生驻 波， 如果待测硅片的某一部分恰好位于半波长处， 则使得待测硅片局部 的温度升高， 导致待测硅片碎裂。 而由于金属是不吸收电磁波的， 所以 加入金属转盘 9后， 金属转盘 9能够反射电磁波， 使微波不能在该超临 界干燥装置内产生驻波， 进而消除驻波影响。 对此， 本发明做过对比试 验， 如果该超临界干燥装置中没有金属转盘， 待测硅片在加热一段时间 后， 极易发生碎裂。  In the microwave-excited supercritical drying device provided by the present invention, the function of the metal turntable 9 is to break up the standing wave so that the silicon wafer to be tested is heated uniformly without chipping. Therefore, during the entire drying process, the silicon wafer itself is not adversely affected. The implementation principle is as follows: The microwave is an electromagnetic wave, taking the frequency of 2.45 GHZ as an example, the wavelength is 12.23 cm, and a standing wave is generated at a half wavelength. If a certain portion of the silicon wafer to be tested is located at a half wavelength, the silicon to be tested is made. The local temperature of the sheet rises, causing the silicon wafer to be tested to be broken. Since the metal does not absorb electromagnetic waves, after the metal turntable 9 is added, the metal turntable 9 can reflect electromagnetic waves, so that the microwave cannot generate standing waves in the supercritical drying device, thereby eliminating the influence of standing waves. In this regard, the present invention has been subjected to a comparative test. If the supercritical drying device does not have a metal turntable, the silicon wafer to be tested is highly susceptible to chipping after being heated for a period of time.
基于图 1所示的微波激发的超临界干燥装置， 下面进一歩说明本发 明利用该超临界干燥装置实现的微波激发的超临界干燥方法， 该方法包 括以下歩骤：  Based on the microwave-excited supercritical drying apparatus shown in Fig. 1, a microwave-excited supercritical drying method using the supercritical drying apparatus of the present invention will be further described below, which comprises the following steps:
歩骤 1 : 将硅片放入石英装置中显影， 该石英装置中盛有显影液； 其中， 石英装置具有石英槽和石英盖， 石英槽用于盛载待干燥的硅片， 石英盖覆盖于石英槽之上， 且石英盖上有直径约为 15mm的孔， 便于加 热时水蒸汽的蒸发。  Step 1: Developing the silicon wafer into a quartz device, wherein the quartz device contains a developing solution; wherein, the quartz device has a quartz tank and a quartz cover, and the quartz tank is for holding the silicon wafer to be dried, and the quartz cover is covered with Above the quartz tank, the quartz cover has a hole with a diameter of about 15 mm to facilitate evaporation of water vapor during heating.
歩骤 2: 显影完毕后， 用去离子水置换掉石英装置中的显影液； 歩骤 3 : 将置换后的盛有硅片的石英装置放入图 1所示的超临界干 燥装置的腔室中， 利用超临界干燥装置中的交变电场对硅片进行加热； 歩骤 4: 在水达到沸点进入旋转超临界时， 真空抽水装置将石英装 置中的水抽出， 并继续利用超临界干燥装置中的交变电场对硅片进行加 热； Step 2: After development, replace the developer in the quartz device with deionized water; Step 3: Place the replaced quartz device containing the silicon wafer into the chamber of the supercritical drying device shown in Fig. 1. The silicon wafer is heated by the alternating electric field in the supercritical drying device; Step 4: When the water reaches the boiling point and enters the rotary supercritical, the vacuum pumping device extracts the water in the quartz device and continues to use the supercritical drying device. The alternating electric field in the silicon Hot
歩骤 5: 待硅片上的水分完全蒸发， 干燥完毕， 取出硅片。  Step 5: The water on the silicon wafer is completely evaporated, and after drying, the silicon wafer is taken out.
其中，在歩骤 2中所述用去离子水置换掉石英装置中的显影液之后， 可以进一歩用沸水置换出去离子水， 使硅片处于沸水浴中， 然后在歩骤 3 中将盛有沸水的石英装置放入超临界干燥装置的腔室中加热。 歩骤 3 和 4中所述交变电场的频率为 2-lOOGHz, 优选的是 2-4GHz。 歩骤 5中 所述待硅片上的水分完全蒸发，是在真空抽水后微波加热时间不超过 30 秒， 水分即可完全蒸发。  Wherein, after replacing the developer in the quartz device with deionized water in step 2, the ionized water may be replaced with boiling water to make the silicon wafer in a boiling water bath, and then it will be contained in step 3. The boiling water quartz device is placed in a chamber of the supercritical drying device for heating. The frequency of the alternating electric field described in steps 3 and 4 is 2-100 GHz, preferably 2-4 GHz. The water on the silicon wafer is completely evaporated in step 5, and the microwave heating time is not more than 30 seconds after vacuum pumping, and the water can be completely evaporated.
下面利用本发明提供的超临界干燥装置分别以对宽度为 14.9nm 的 HSQ胶线条、 直径 20nmx间隔 20nmx高度 260nm的光刻胶点阵、 宽度 为 32.9nm的 HSQ胶线条和尺寸为 21.8><17.9nm的格栅进行微波干燥为 例， 对本发明利用该超临界干燥装置实现的微波激发的超临界干燥方法 进行详细说明。  The following uses the supercritical drying device provided by the present invention to respectively form a HSQ glue line with a width of 14.9 nm, a photoresist dot matrix with a diameter of 20 nm x 20 nm x a height of 260 nm, and a HSQ glue line with a width of 32.9 nm and a size of 21.8><17.9. Taking the microwave drying of the grid of nm as an example, the microwave-excited supercritical drying method realized by the supercritical drying device of the present invention will be described in detail.
实施例 1 : 微波干燥宽度为 14.9nm的 HSQ胶线条  Example 1 : Microwave drying of HSQ glue lines with a width of 14.9 nm
歩骤 1 : 将带有光刻胶图形的 2寸、 4寸或 8寸硅片放入石英装置 中显影， 该石英装置中有适用于 HSQ胶的显影液；  Step 1: Developing a 2 inch, 4 inch or 8 inch silicon wafer with a photoresist pattern in a quartz device, which has a developer suitable for HSQ glue;
歩骤 2: 显影完毕后， 用去离子水置换掉石英装置中的显影液； 歩骤 3: 将置换后的盛有硅片的石英装置放入图 1所示的微波激发 的超临界干燥装置的腔室中， 利用该超临界干燥装置中的交变电场进行 加热， 具体加热原理为： 水分子是极性分子， 随着交变电场的方向迅速 变化， 水分子的极性也随之改变方向， 当改变频率越来越快， 水分子开 始高速旋转， 动能增加， 分子团簇间不断摩擦碰撞， 热能增加， 水分子 之间的化学键被破坏， 水分蒸发， 完成干燥； 交变电场的频率为 2-lOOGHz, 优选的是 2-4GHz。  Step 2: After development is completed, the developer in the quartz device is replaced with deionized water; Step 3: The replaced silicon wafer-equipped quartz device is placed in the microwave-excited supercritical drying device shown in FIG. In the chamber, the alternating electric field in the supercritical drying device is used for heating. The specific heating principle is as follows: The water molecules are polar molecules, and the polarity of the water molecules changes as the direction of the alternating electric field changes rapidly. Direction, when the frequency is changed faster and faster, the water molecules start to rotate at a high speed, the kinetic energy increases, the friction between the molecular clusters collides, the heat energy increases, the chemical bonds between the water molecules are destroyed, the water evaporates, and the drying is completed; the frequency of the alternating electric field It is 2-100 GHz, preferably 2-4 GHz.
歩骤 4: 在水达到沸点进入旋转超临界时， 真空抽水装置将石英装 置中的水抽出， 以缩短水分蒸发时间， 并继续利用该超临界干燥装置中 的交变电场进行加热；交变电场的频率为 2-lOOGHz,优选的是 2-4GHz。  Step 4: When the water reaches the boiling point and enters the rotating supercritical state, the vacuum pumping device extracts the water in the quartz device to shorten the evaporation time of the water, and continues to use the alternating electric field in the supercritical drying device for heating; the alternating electric field The frequency is 2-100 GHz, preferably 2-4 GHz.
歩骤 5: 待硅片上的水分完全蒸发， 干燥完毕， 取出硅片。 一般情 况下， 通过实验验证， 真空抽水后， 微波加热时间不超过 30s， 水分即 可完全蒸发。 Step 5: The water on the silicon wafer is completely evaporated, and after drying, the silicon wafer is taken out. Under normal circumstances, it is verified by experiments that after vacuum pumping, the microwave heating time does not exceed 30s, and the water is Can be completely evaporated.
图 4示出了依照本发明实施例利用超临界干燥装置微波干燥宽度为 14.9nm的 HSQ胶线条的电镜扫描照片。  4 shows an electron microscopy scan of a HSQ glue line having a width of 14.9 nm by microwave drying using a supercritical drying apparatus in accordance with an embodiment of the present invention.
利用本发明提供的超临界干燥装置来微波干燥直径 20nmx间隔 20nmx高度 260nm的光刻胶点阵、宽度为 32.9nm的 HSQ胶线条或尺寸 为 21.8x l7.9nm的光刻胶格栅的具体工艺与上述微波干燥宽度为 14.9nm 的 HSQ胶线条的具体工艺是一致的， 这里就不再赘述， 以下图 5至图 7 示出了其各自微波干燥后的电镜扫描照片。 其中， 图 5示出了依照本发 明实施例利用超临界干燥装置微波干燥直径 20nmx间隔 20nm><高度 260nm的光刻胶点阵的电镜扫描照片， 图 6示出了依照本发明实施例利 用超临界干燥装置微波干燥宽度为 32.9nm的 HSQ胶线条的电镜扫描照 片， 图 7示出了依照本发明实施例利用超临界干燥装置微波干燥尺寸为 21.8x l7.9nm的光刻胶格栅的电镜扫描照片。  Using a supercritical drying device provided by the present invention to microwave dry a 20 nm x 20 nm x 260 nm photoresist dot matrix, a 32.9 nm width HSQ glue line or a 21.8 x 7.9 nm photoresist grid The specific process of the above-mentioned microwave drying width of 14.9 nm HSQ glue line is the same, and will not be described here. The following FIG. 5 to FIG. 7 show the electron micrographs of the respective microwave drying. 5 shows an electron microscopy scan of a photoresist dot array having a diameter of 20 nm x 20 nm > < height 260 nm using a supercritical drying device in accordance with an embodiment of the present invention, and FIG. 6 illustrates the use of super in accordance with an embodiment of the present invention. An electron microscopy scan of a critical drying apparatus with a microwave drying width of 32.9 nm of HSQ glue lines, and FIG. 7 shows an electron microscope of a photoresist grid having a size of 21.8 x 7.9 nm using a supercritical drying apparatus in accordance with an embodiment of the present invention. Scan photos.
本发明提供的这种微波激发的超临界干燥装置及方法， 是用于对显 影之后微细结构的纳米图形进行干燥， 能够解决微细结构的纳米图形在 干燥过程中发生的断裂、 倒伏或粘连等问题。 本发明适用于所有微细结 构的纳米图形的干燥，尤其是对 22/16/14nm尺寸的纳米图形或纳米线条 的干燥。  The microwave-excited supercritical drying device and method provided by the invention are used for drying the nano-pattern of the microstructure after development, and can solve the problems of breakage, lodging or adhesion of the nano-pattern of the fine structure during the drying process. . The present invention is applicable to the drying of nanopatterns of all fine structures, especially the drying of nano-patterns or nano-lines of 22/16/14 nm size.
以上所述的具体实施例， 对本发明的目的、 技术方案和有益效果进 行了进一歩详细说明， 所应理解的是， 以上所述仅为本发明的具体实施 例而已， 并不用于限制本发明， 凡在本发明的精神和原则之内， 所做的 任何修改、 等同替换、 改进等， 均应包含在本发明的保护范围之内。  The specific embodiments of the present invention have been described in detail with reference to the preferred embodiments of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.

Claims

权利要求 Rights request
1、 一种微波激发的超临界干燥装置， 其特征在于， 包括： 腔室 (3)； 1. A microwave-excited supercritical drying device, characterized in that it includes: a chamber (3);
设置于腔室 （3) 内盛载待测硅片 （5) 的石英装置 （4); A quartz device (4) disposed in the chamber (3) containing the silicon wafer (5) to be tested;
设置于腔室 （3) 外且与石英装置 （4) 连通的真空抽水装置 （1); 设置于腔室 （3) 内侧壁上的金属转盘 （9); A vacuum pumping device (1) provided outside the chamber (3) and connected to the quartz device (4); a metal turntable (9) provided on the inner wall of the chamber (3);
设置于腔室 （3) 内与金属转盘 （9) 连接的电机 （10); A motor (10) arranged in the chamber (3) and connected to the metal turntable (9);
设置于腔室 （3) 内的微波发生装置 （11); 以及 a microwave generating device (11) provided in the chamber (3); and
设置于腔室 （3) 内的黄色光源 （12)。 A yellow light source (12) placed in the chamber (3).
2、 根据权利要求 1 所述的微波激发的超临界干燥装置， 其特征在 于， 所述石英装置 （4) 具有石英槽和石英盖， 石英槽中用于盛载待测 硅片 （5)， 石英盖覆盖于石英槽之上。 2. The microwave-excited supercritical drying device according to claim 1, characterized in that the quartz device (4) has a quartz tank and a quartz cover, and the quartz tank is used to contain the silicon wafer to be tested (5), The quartz cover covers the quartz tank.
3、 根据权利要求 2 所述的微波激发的超临界干燥装置， 其特征在 于， 所述石英盖上有直径为 15mm的孔， 便于加热时水蒸汽的蒸发。 3. The microwave-excited supercritical drying device according to claim 2, wherein the quartz cover has a hole with a diameter of 15 mm to facilitate the evaporation of water vapor during heating.
4、 根据权利要求 1 所述的微波激发的超临界干燥装置， 其特征在 于， 所述真空抽水装置 （1) 的一端与真空装置连接， 另一端通过塑料 软管 （2) 连通于石英装置 （4)， 在水达到沸点进入旋转超临界时， 真 空抽水装置 （1) 将石英装置 （4) 中的水抽出， 以缩短水分蒸发时间。 4. The microwave-excited supercritical drying device according to claim 1, characterized in that one end of the vacuum pumping device (1) is connected to the vacuum device, and the other end is connected to the quartz device (2) through a plastic hose (2). 4), when the water reaches the boiling point and enters the rotating supercritical state, the vacuum water pumping device (1) pumps out the water in the quartz device (4) to shorten the water evaporation time.
5、 根据权利要求 4 所述的微波激发的超临界干燥装置， 其特征在 于， 所述塑料软管 （2) 是真空抽水导出通道。 5. The microwave-excited supercritical drying device according to claim 4, characterized in that the plastic hose (2) is a vacuum pumping outlet channel.
6、 根据权利要求 1 所述的微波激发的超临界干燥装置， 其特征在 于， 所述金属转盘（9) 固定于该超临界干燥装置的腔室（3) 内侧壁上， 并与电机（10)相连接， 其上不放置任何物体， 用于在旋转时打散驻波， 使得待测硅片 （5) 加热均匀， 不发生碎裂。 6. The microwave-excited supercritical drying device according to claim 1, characterized in that the metal turntable (9) is fixed on the inner wall of the chamber (3) of the supercritical drying device and connected with the motor (10) ) are connected to each other without any objects placed on them, and are used to break up the standing waves during rotation, so that the silicon wafer to be tested (5) is heated evenly and does not break.
7、 根据权利要求 1 所述的微波激发的超临界干燥装置， 其特征在 于， 所述电机 （10) 用于带动金属转盘 （9) 旋转。 7. The microwave-excited supercritical drying device according to claim 1, characterized in that the motor (10) is used to drive the metal turntable (9) to rotate.
8、 根据权利要求 1 所述的微波激发的超临界干燥装置， 其特征在 于， 所述微波发生装置 （11) 是微波发射装置， 用于发出微波。 8. The microwave-excited supercritical drying device according to claim 1, characterized in that the microwave generating device (11) is a microwave emitting device for emitting microwaves.
9、 根据权利要求 1 所述的微波激发的超临界干燥装置， 其特征在 于， 所述黄色光源 （12 ) 用于给腔室提供黄色光源， 避免硅片上的光刻 胶图形受到外界光源的影响。 9. The microwave-excited supercritical drying device according to claim 1, characterized in that the yellow light source (12) is used to provide a yellow light source to the chamber to prevent the photoresist pattern on the silicon wafer from being affected by external light sources. Influence.
10、 根据权利要求 9所述的微波激发的超临界干燥装置， 其特征在 于， 所述黄色光源 （12 ) 是黄色荧光灯。 10. The microwave-excited supercritical drying device according to claim 9, characterized in that the yellow light source (12) is a yellow fluorescent lamp.
11、 根据权利要求 1所述的微波激发的超临界干燥装置， 其特征在 于， 该超临界干燥装置还包括一设置于腔室 （3 ) 外部的控制面板， 微 波发生装置 （11 ) 与黄色光源 （12 ) 均固定在控制面板后的腔室 （3 ) 内。 11. The microwave-excited supercritical drying device according to claim 1, characterized in that the supercritical drying device further includes a control panel arranged outside the chamber (3), a microwave generating device (11) and a yellow light source (12) are fixed in the chamber (3) behind the control panel.
12、 根据权利要求 11 所述的微波激发的超临界干燥装置， 其特征 在于， 在该控制面板上设置有时间显示装置 （6)、 时间设置旋钮 （7 ) 和电机转速设置旋钮 （8)， 其中， 时间显示装置 （6 ) 用于显示实验所 设定的时间， 时间设置旋钮 （7 ) 用于设置实验时间， 电机转速设置旋 钮 （8) 用于设置电机转速。 12. The microwave-excited supercritical drying device according to claim 11, characterized in that a time display device (6), a time setting knob (7) and a motor speed setting knob (8) are provided on the control panel, Among them, the time display device (6) is used to display the time set by the experiment, the time setting knob (7) is used to set the experimental time, and the motor speed setting knob (8) is used to set the motor speed.
13、 一种利用权利要求 1至 12中任一项所述的微波激发的超临界 干燥装置实现的微波激发的超临界干燥方法， 其特征在于， 包括： 13. A microwave-excited supercritical drying method realized by the microwave-excited supercritical drying device according to any one of claims 1 to 12, characterized in that it includes:
歩骤 1 : 将硅片放入石英装置中显影， 该石英装置中盛有显影液； 歩骤 2: 显影完毕后， 用去离子水置换掉石英装置中的显影液； 歩骤 3 : 将置换后的盛有硅片的石英装置放入超临界干燥装置的腔 室中， 利用超临界干燥装置中的交变电场对硅片进行加热； Step 1: Place the silicon wafer into a quartz device for development. The quartz device contains a developer solution; Step 2: After development, replace the developer solution in the quartz device with deionized water; Step 3: Replace the developer solution. The final quartz device containing the silicon wafer is placed into the chamber of the supercritical drying device, and the alternating electric field in the supercritical drying device is used to heat the silicon wafer;
歩骤 4: 在水达到沸点进入旋转超临界时， 真空抽水装置将石英装 置中的水抽出， 并继续利用超临界干燥装置中的交变电场对硅片进行加 热； Step 4: When the water reaches the boiling point and enters the rotating supercritical state, the vacuum pumping device draws out the water in the quartz device and continues to use the alternating electric field in the supercritical drying device to heat the silicon wafer;
歩骤 5: 待硅片上的水分完全蒸发， 干燥完毕， 取出硅片。 Step 5: After the water on the silicon wafer has completely evaporated and drying is complete, take out the silicon wafer.
14、 根据权利要求 13 所述的微波激发的超临界干燥方法， 其特征 在于， 歩骤 1中所述石英装置具有石英槽和石英盖， 石英槽用于盛载待 干燥的硅片， 石英盖覆盖于石英槽之上。 14. The microwave-excited supercritical drying method according to claim 13, characterized in that the quartz device in step 1 has a quartz tank and a quartz cover, the quartz tank is used to hold the silicon wafer to be dried, and the quartz cover Covered on quartz trough.
15、 根据权利要求 14所述的微波激发的超临界干燥方法， 其特征 在于， 所述石英盖上有直径为 15mm的孔， 便于加热时水蒸汽的蒸发。 15. The microwave-excited supercritical drying method according to claim 14, characterized in that the quartz cover has a hole with a diameter of 15 mm to facilitate the evaporation of water vapor during heating.
16、 根据权利要求 13 所述的微波激发的超临界干燥方法， 其特征 在于， 歩骤 2中所述用去离子水置换掉石英装置中的显影液之后， 进一 歩用沸水置换出去离子水， 使硅片处于沸水浴中， 然后在歩骤 3中将盛 有沸水的石英装置放入超临界干燥装置的腔室中加热。 16. The microwave-excited supercritical drying method according to claim 13, characterized in that, after replacing the developer in the quartz device with deionized water as described in step 2, the deionized water is further replaced with boiling water. Place the silicon wafer in a boiling water bath, and then in step 3, place the quartz device containing the boiling water into the chamber of the supercritical drying device for heating.
17、 根据权利要求 13 所述的微波激发的超临界干燥方法， 其特征 在于， 歩骤 3和歩骤 4中所述交变电场的频率为 2至 100GHz。 17. The microwave-excited supercritical drying method according to claim 13, characterized in that the frequency of the alternating electric field in step 3 and step 4 is 2 to 100 GHz.
18、 根据权利要求 17 所述的微波激发的超临界干燥方法， 其特征 在于， 所述交变电场的频率为 2至 4GHz。 18. The microwave-excited supercritical drying method according to claim 17, characterized in that the frequency of the alternating electric field is 2 to 4 GHz.
19、 根据权利要求 13 所述的微波激发的超临界干燥方法， 其特征 在于， 歩骤 5中所述待硅片上的水分完全蒸发， 是在真空抽水后微波加 热时间不超过 30秒， 水分即可完全蒸发。 19. The microwave-excited supercritical drying method according to claim 13, characterized in that when the water on the silicon wafer is completely evaporated as described in step 5, the microwave heating time does not exceed 30 seconds after the vacuum water is pumped. It will evaporate completely.
PCT/CN2012/084136 2012-11-06 2012-11-06 Microwave excited supercritical drying apparatus and method therefor WO2014071552A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2012/084136 WO2014071552A1 (en) 2012-11-06 2012-11-06 Microwave excited supercritical drying apparatus and method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2012/084136 WO2014071552A1 (en) 2012-11-06 2012-11-06 Microwave excited supercritical drying apparatus and method therefor

Publications (1)

Publication Number Publication Date
WO2014071552A1 true WO2014071552A1 (en) 2014-05-15

Family

ID=50683897

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/084136 WO2014071552A1 (en) 2012-11-06 2012-11-06 Microwave excited supercritical drying apparatus and method therefor

Country Status (1)

Country Link
WO (1) WO2014071552A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103837185A (en) * 2014-03-10 2014-06-04 上海华虹宏力半导体制造有限公司 Test instrument mounting support

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261834A (en) * 1987-04-20 1988-10-28 Fujitsu Ltd Resist hardening method
US20030233764A1 (en) * 2002-06-20 2003-12-25 Kwang-Wook Lee Method for drying a wafer and apparatus for performing the same
JP2004311507A (en) * 2003-04-02 2004-11-04 Hitachi Sci Syst Ltd Method, device, and system for drying microstructure
CN1176759C (en) * 1996-11-08 2004-11-24 恩益禧电子股份有限公司 Microwave-excitation cleaning and rinsing apparatus
JP2005175178A (en) * 2003-12-11 2005-06-30 Hitachi Sci Syst Ltd Supercritical fluid processor and its method
US20110289793A1 (en) * 2010-05-25 2011-12-01 Hidekazu Hayashi Supercritical drying method
US20120118332A1 (en) * 2010-11-15 2012-05-17 Yohei Sato Supercritical drying method for semiconductor substrate
CN102929110A (en) * 2012-11-06 2013-02-13 中国科学院微电子研究所 Device and method for supercritical drying of microwave excitation

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261834A (en) * 1987-04-20 1988-10-28 Fujitsu Ltd Resist hardening method
CN1176759C (en) * 1996-11-08 2004-11-24 恩益禧电子股份有限公司 Microwave-excitation cleaning and rinsing apparatus
US20030233764A1 (en) * 2002-06-20 2003-12-25 Kwang-Wook Lee Method for drying a wafer and apparatus for performing the same
JP2004311507A (en) * 2003-04-02 2004-11-04 Hitachi Sci Syst Ltd Method, device, and system for drying microstructure
JP2005175178A (en) * 2003-12-11 2005-06-30 Hitachi Sci Syst Ltd Supercritical fluid processor and its method
US20110289793A1 (en) * 2010-05-25 2011-12-01 Hidekazu Hayashi Supercritical drying method
US20120118332A1 (en) * 2010-11-15 2012-05-17 Yohei Sato Supercritical drying method for semiconductor substrate
CN102929110A (en) * 2012-11-06 2013-02-13 中国科学院微电子研究所 Device and method for supercritical drying of microwave excitation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103837185A (en) * 2014-03-10 2014-06-04 上海华虹宏力半导体制造有限公司 Test instrument mounting support
CN103837185B (en) * 2014-03-10 2016-08-24 上海华虹宏力半导体制造有限公司 Test instrunment mounting bracket

Similar Documents

Publication Publication Date Title
TWI612601B (en) Substrate treatment method and substrate treatment apparatus
CN102929110B (en) Device and method for supercritical drying of microwave excitation
US20030192577A1 (en) Method and apparatus for wafer cleaning
US6715498B1 (en) Method and apparatus for radiation enhanced supercritical fluid processing
US20060266389A1 (en) Method and apparatus for wafer cleaning
US10464107B2 (en) Substrate processing method and substrate processing apparatus
US20080308131A1 (en) Method and apparatus for cleaning and driving wafers
US20130284212A1 (en) Method for processing a substrate and apparatus for performing the same
JP4038556B2 (en) Resist film removing apparatus, resist film removing method, organic substance removing apparatus, and organic substance removing method
JP6624609B2 (en) Substrate processing apparatus and substrate processing method
US20110183522A1 (en) Method and apparatus for pattern collapse free wet processing of semiconductor devices
JP2012511813A (en) Semiconductor wafer cleaning method and apparatus
KR20140148340A (en) Method of collapse-free drying of high aspect ratio structures
JP5295829B2 (en) Substrate cleaning method
TW201730959A (en) Substrate processing method and substrate processing apparatus
CN104347450A (en) Semiconductor drying device and method
KR20100130695A (en) Method for forming carbon pattern using oxygen plasma
WO2014071552A1 (en) Microwave excited supercritical drying apparatus and method therefor
KR100483429B1 (en) Method and Apparatus FOR Cleaning A Semiconductor Substrate
US10593587B2 (en) Substrate treatment apparatus
CN103420333A (en) Method and apparatus for drying nanometer pattern by using microwave
JP2019197893A (en) Rapid wafer drying using induction heating
JP2016143873A (en) Substrate processing method and substrate processing device
CN103736689A (en) Silicon wafer cleaning method
JP7311988B2 (en) SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12888037

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12888037

Country of ref document: EP

Kind code of ref document: A1