WO2014054377A1 - ウエハ取り付け方法及びウエハ検査装置 - Google Patents
ウエハ取り付け方法及びウエハ検査装置 Download PDFInfo
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- WO2014054377A1 WO2014054377A1 PCT/JP2013/074003 JP2013074003W WO2014054377A1 WO 2014054377 A1 WO2014054377 A1 WO 2014054377A1 JP 2013074003 W JP2013074003 W JP 2013074003W WO 2014054377 A1 WO2014054377 A1 WO 2014054377A1
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- wafer
- chuck top
- probe card
- contact
- cylindrical member
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0491—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets for testing integrated circuits on wafers, e.g. wafer-level test cartridge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2893—Handling, conveying or loading, e.g. belts, boats, vacuum fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
Definitions
- the present invention relates to a wafer attachment method for attaching a wafer to a probe card for wafer inspection.
- a prober In order to inspect a wafer on which a large number of semiconductor devices are formed, a prober is used as an inspection apparatus.
- the prober includes a probe card that faces the wafer, and the probe card has a plate-like base and a plurality of electrodes arranged on the surface of the base facing the wafer so as to face each electrode pad and each solder bump on the semiconductor device of the wafer.
- a contact probe that is a columnar contact terminal (see, for example, Patent Document 1).
- each contact probe of the probe card comes into contact with an electrode pad or solder bump in the semiconductor device, and electricity is supplied from each contact probe to the electric circuit of the semiconductor device connected to each electrode pad or each solder bump. Check the continuity of the circuit.
- a wafer inspection system that has multiple probe cards and can inspect semiconductor devices on wafers with other probe cards while a wafer is being transferred to one probe card by a transfer stage has been developed. Has been.
- this wafer inspection apparatus when each wafer is brought into contact with each probe card, the space between the probe card and the wafer is evacuated and the wafer is vacuum-sucked to the probe card (see, for example, Patent Document 2).
- the rigidity of the wafer is low, if only the wafer is vacuum-sucked to the probe card, the wafer may be warped and the electrode pads or solder bumps may not contact the contact probes of the probe card evenly.
- the chuck top 80 which is a thick plate member for placing the wafer W together with the wafer W, is vacuum-sucked to the probe card 81 and warpage of the wafer W is suppressed by the chuck top 80.
- the space between the chuck top 80 and the probe card 81 is surrounded by a bellows 82 that is a metal bellows structure, and the space is evacuated (FIG. 8B), but the chuck top 80 is close to the probe card 81.
- the bellows 82 compressed at that time may generate a reaction force and the position of the chuck top 80 with respect to the probe card 81 may be shifted.
- the position of the chuck top 80 with respect to the probe card 81 may be shifted. As described above, when the position of the chuck top 80 with respect to the probe card 81 is shifted, each electrode pad or each solder bump of the wafer W placed on the chuck top 80 cannot contact each contact probe of the probe card 81.
- the present inventor provided a guide member 83 projecting toward the chuck top 80 on the side of each probe card 81 as shown in FIGS. 80 has been proposed to prevent the occurrence of displacement of the chuck top 80 with respect to the probe card 81 (see, for example, Patent Document 2).
- JP 2012-063227 A Japanese Patent Application No. 2012-128712
- the wafer inspection apparatus includes a plurality of probe cards and the guide member needs to be provided corresponding to each probe card, there is a problem that the structure of the wafer inspection apparatus is complicated.
- An object of the present invention is to provide a wafer mounting method and a wafer inspection apparatus that can prevent the structure of the wafer inspection apparatus from becoming complicated.
- a wafer attachment method for attaching a wafer to a probe card having a large number of contact terminals protruding toward the wafer, the telescopic cylinder extending toward the wafer.
- a wafer-like member is arranged so as to surround the probe card, the wafer is placed on a chuck top that is a thick plate member, the chuck top is supported on a movable stage, and the stage is mounted together with the wafer and the chuck top.
- the probe card is moved toward the probe card to bring the chuck top into contact with the cylindrical member.
- the stage After the chuck top has been brought into contact with the cylindrical member, the stage is moved together with the wafer and the chuck top to the probe card.
- a wafer mounting method in which the wafer is brought into contact with the probe card by moving toward the probe card It is subjected.
- the space surrounded by the chuck top, the cylindrical member, and the probe card is evacuated after the wafer contacts the probe card.
- the pressing force that the chuck top presses the wafer against the probe card is larger than the reaction force that the cylindrical member applies to the chuck top.
- the chuck top is attracted to the stage after at least the chuck top abuts on the cylindrical member.
- a probe card having a large number of contact terminals protruding toward a wafer, and a telescoping element that is disposed so as to surround the probe card and extend toward the wafer.
- a wafer inspection apparatus comprising: a cylindrical member; a chuck top that is a thick plate member on which the wafer is placed; and a movable stage that supports the chuck top.
- the chuck top, the cylindrical member, and the probe card A wafer inspection apparatus in which a pressing force by which the chuck top presses the wafer against the probe card is set larger than a reaction force applied by the cylindrical member to the chuck top when evacuating the space surrounded by Provided.
- the stage moves together with the wafer and the chuck top together with the wafer and the chuck top, and contacts the stretchable cylindrical member extending toward the wafer with the wafer and the chuck top.
- the wafer is moved toward the probe card and brought into contact with the probe card. That is, even after the chuck top abuts against the cylindrical member, the chuck top is supported by the stage, so that even if the chuck top receives a reaction force from the cylindrical member, the position of the chuck top does not shift with respect to the probe card. It is possible to eliminate the need to provide a guide member for guiding As a result, the structure of the wafer inspection apparatus can be prevented from becoming complicated.
- the reaction force applied to the chuck top by the cylindrical member is Since the pressing force with which the chuck top presses the wafer against the probe card is large, the chuck top is not pushed back from the probe card and is not displaced with respect to the probe card. As a result, there is no need to provide a guide member for guiding the chuck top, and the structure of the wafer inspection apparatus can be prevented from becoming complicated.
- FIG. 1 is a horizontal sectional view schematically showing a configuration of a wafer inspection apparatus to which a wafer mounting method according to an embodiment of the present invention is applied.
- 2 is a cross-sectional view taken along line II-II in FIG.
- FIG. 3 is a cross-sectional view schematically showing a configuration of a transfer stage and a tester in FIGS. 1 and 2.
- FIG. 4A to FIG. 4D FIG. 4A to FIG.
- FIGS. 5A to 5C are process diagrams of a modification of the wafer mounting method according to the present embodiment.
- FIG. 6C It is process drawing of the modification of the wafer attachment method based on this Embodiment.
- FIG. 6A It is process drawing of the modification of the wafer attachment method based on this Embodiment.
- FIG. 7 is a cross-sectional view schematically showing configurations of a transfer stage and a tester in a modified example of the wafer inspection apparatus according to the embodiment of the present invention.
- 8A to 8C are process diagrams of a wafer mounting method executed in a conventional wafer inspection apparatus.
- FIG. 1 is a horizontal sectional view schematically showing a configuration of a wafer inspection apparatus to which the wafer mounting method according to the present embodiment is applied
- FIG. 2 is a sectional view taken along line II-II in FIG. .
- the wafer inspection apparatus 10 includes an inspection chamber 11.
- the inspection chamber 11 includes an inspection region 12 for inspecting electrical characteristics of each semiconductor device of the wafer W, and the transfer of the wafer W to the inspection chamber 11. It has a carry-in / out area 13 for entering and a conveyance area 14 provided between the inspection area 12 and the carry-in / out area 13.
- a plurality of testers 15 as wafer inspection interfaces are arranged in the inspection area 12.
- the inspection area 12 has a three-layer structure of a tester row composed of a plurality of testers arranged horizontally, and one tester side camera 16 is arranged corresponding to each tester row.
- Each tester side camera 16 moves horizontally along the corresponding tester row, and confirms the position of a wafer W or the like that is located in front of each tester 15 constituting the tester row and is carried by a later-described carrying stage 18.
- the carry-in / out area 13 is partitioned into a plurality of storage spaces 17, and a port 17 a for receiving a FOUP that is a container for storing a plurality of wafers, an aligner 17 b for aligning the wafers, and a probe card 20 are carried into each storage space 17.
- a loader 17c to be carried out and a controller 17d for controlling the operation of each component of the wafer inspection apparatus 10 are arranged.
- a transfer stage 18 that is movable not only to the transfer area 14 but also to the inspection area 12 and the carry-in / out area 13 is disposed in the transfer area 14.
- the transfer stage 18 receives the wafer W from the port 17a of the carry-in / out area 13 and transfers it to each tester 15, and also transfers the wafer W that has been subjected to the inspection of the electrical characteristics of the semiconductor device from each tester 15 to the port 17a. .
- the electrical characteristics of each semiconductor device of the wafer W to which each tester 15 has been transferred are inspected. While the transfer stage 18 is transferring the wafer W toward one tester 15. Since the other tester 15 can inspect the electrical characteristics of the semiconductor devices of the other wafers W, the wafer inspection efficiency can be improved.
- FIG. 3 is a cross-sectional view schematically showing the configuration of the transfer stage and the tester in FIGS.
- FIG. 3 shows a state in which the transfer stage 18 brings the wafer W into contact with the probe card 20 of the tester 15.
- the tester 15 is engaged with and connected to a probe card 20, a pogo frame 19 on which the probe card 20 is mounted, a base 21 that supports the pogo frame 19, and a pogo frame 19.
- a flange 22 (cylindrical member) that is movable in the vertical direction with respect to 19 and a bellows 23 (cylindrical member) interposed between the pogo frame 19 and the flange 22 are provided.
- the probe card 20 is disposed so as to protrude downward from the bottom surface of the main body 24, a disk-shaped main body 24, a large number of electrodes (not shown) disposed on substantially the upper surface of the main body 24, and the lower surface of the main body 24.
- Each electrode is connected to a corresponding contact probe 25, and each contact probe 25 comes into contact with an electrode pad or a solder bump of each semiconductor device formed on the wafer W when the wafer W comes into contact with the probe card 20. .
- the pogo frame 19 has a substantially flat plate-like main body 26 and pogo block insertion holes 27 that are a plurality of through holes formed near the center of the main body 26.
- a pogo block 31 formed by arranging the pogo pins is inserted.
- the pogo block 31 is connected to an inspection circuit (not shown) included in the tester 15, and contacts a number of electrodes on the upper surface of the main body 24 of the probe card 20 mounted on the pogo frame 19, and is connected to the electrodes.
- a current is caused to flow to each contact probe 25 of the card 20 and a current flowing from the electric circuit of each semiconductor device on the wafer W via each contact probe 25 is caused to flow toward the inspection circuit.
- the flange 22 has a cylindrical main body 22a and an abutting portion 22b made of an annular member formed at the lower portion of the main body 22a, and is arranged so as to surround the probe card 20. As will be described later, until the chuck top 28 comes into contact with the flange 22, the flange 22 moves by its own weight so that the lower surface of the contact portion 22 b is positioned below the tip of each contact probe 25 of the probe card 20.
- the bellows 23 is a metal bellows structure and is configured to be extendable in the vertical direction.
- the lower and upper ends of the bellows 23 are in close contact with the upper surface of the contact portion 22b of the flange 22 and the lower surface of the pogo frame 19, respectively.
- the space between the pogo frame 19 and the base 21 is sealed with a seal member 29 a, and the space is evacuated to attach the pogo frame 19 to the base 21.
- the space between them is also sealed with a seal member 29b, and the probe card 20 is mounted on the pogo frame 19 by evacuating the space.
- the transfer stage 18 is composed of a flat plate-like member disposed below the tester 15, and the transfer stage 18 supports a table-like chuck top 28, and a wafer W is placed on the upper surface of the chuck top 28.
- the chuck top 28 is vacuum-sucked to the transfer stage 18, and the wafer W is vacuum-sucked to the chuck top 28. Therefore, it is possible to prevent the chuck top 28 and the wafer W from moving relative to the transfer stage 18 when the transfer stage 18 moves.
- the holding method of the chuck top 28 and the wafer W is not limited to vacuum suction, and any method that can prevent the relative movement of the chuck top 28 or the wafer W with respect to the transfer stage 18 may be used. It may be.
- a step 28a is formed on the peripheral edge of the upper surface of the chuck top 28, and a seal member 29c is disposed on the step 28a.
- the transfer stage 18 Since the transfer stage 18 is movable, the wafer W placed on the chuck top 28 can be moved to the lower side of the probe card 20 of the tester 15 to face the probe card 20 and moved toward the tester 15. Thus, the wafer W can be brought into contact with the probe card 20.
- the transfer stage 18 moves to the tester 15.
- the chuck top 28 contacts the contact portion 22b of the flange 22 without any gap, and the wafer W contacts the plurality of contact probes 25 evenly.
- the movement of the transfer stage 18 is controlled by the controller 17d, and the controller 17d grasps the position and the movement amount of the transfer stage 18.
- the wafer attachment method according to the present embodiment is individually executed with respect to the probe card 20 of each tester 15.
- FIGS. 4A to 4D are process diagrams of the wafer mounting method according to the present embodiment.
- the chuck top 28 is supported by the transfer stage 18, and the chuck top 28 is vacuum-sucked to the transfer stage 18. Further, the wafer W is placed on the chuck top 28 and the wafer W is vacuum-sucked to the chuck top 28. Thereafter, the transfer stage 18 is moved together with the wafer W and the chuck top 28 below the one tester 15 so that the center of the wafer W faces the center of the probe card 20 mounted on the pogo frame 19 of the tester 15 (FIG. 4A). .
- the transfer stage 18 is moved upward toward the probe card 20 together with the wafer W and the chuck top 28 to bring the chuck top 28 into contact with the contact portion 22b of the flange 22 (FIG. 4B).
- the chuck top 28 indirectly contacts the bellows 23 via the flange 22.
- the transfer stage 18 is moved upward together with the wafer W and the chuck top 28 toward the probe card 20 to bring the wafer W into contact with the probe card 20 ( FIG. 4C).
- the space S surrounded by the chuck top 28, the flange 22, the pogo frame 19, and the probe card 20 is evacuated and the chuck top 28 is sucked into the probe card 20 to maintain the positional relationship between the chuck top 28 and the probe card 20.
- the bellows 23 is compressed and applies a reaction force to the chuck top 28, but the reaction force that the chuck top 28 applies to the wafer W due to the vacuuming of the space S acts on the chuck top 28.
- the depressurization value in evacuation is set so as to be larger than that.
- the transfer stage 18 stops the evacuation of the chuck top 28 and moves away from the chuck top 28 (FIG. 4D).
- the chuck top 28 functions as an outer wall that partitions the space S
- the wafer W does not function as an outer wall that partitions the space S.
- the negative pressure resulting from the evacuation of the space S is not applied to the wafer W, and the wafer W does not warp.
- the transfer stage 18 moves toward the probe card 20 together with the wafer W and the chuck top 28, and after the chuck top 28 is indirectly brought into contact with the bellows 23.
- the wafer W and the chuck top 28 are further moved toward the probe card 20 together with the wafer W to bring the wafer W into contact with the probe card 20. That is, even after the chuck top 28 indirectly contacts the bellows 23, the chuck top 28 is supported by the transfer stage 18 until the wafer W contacts the probe card 20. Even if it is received, the position does not shift with respect to the probe card 20.
- the chuck top 28 when the space W surrounded by the chuck top 28, the flange 22, the pogo frame 19, and the probe card 20 is evacuated after the wafer W contacts the probe card 20, the bellows 23. Since the pressing force applied to the wafer W by the chuck top 28 is greater than the reaction force applied to the chuck top 28, the chuck top 28 is not pushed back from the probe card 20 and is not displaced from the probe card 20.
- the position of the chuck top 28 does not shift with respect to the probe card 20, so that it is not necessary to provide a guide member for guiding the chuck top 28. It is possible to prevent the wafer inspection apparatus 10 from becoming complicated.
- the chuck top 28 is vacuum-adsorbed to the transfer stage 18 before the chuck top 28 indirectly contacts the bellows 23, but the chuck top 28 is indirectly attached to the bellows 23.
- the chuck top 28 may be vacuum-sucked to the transfer stage 18 immediately after coming into contact with. Even in this case, when the chuck top 28 receives a reaction force from the bellows 23, the chuck top 28 is vacuum-sucked to the transfer stage 18, so that the position of the chuck top 28 is shifted with respect to the transfer stage 18. Can be reliably prevented.
- FIGS. 5A to 5C and FIGS. 6A to 6C are process diagrams of a modified example of the wafer mounting method according to the present embodiment.
- This modification is a case where the number of contact probes 25 of the probe card 20 is smaller than the number of electrode pads and solder bumps in each semiconductor device on the wafer W, and all semiconductor devices formed on the wafer W are inspected. Therefore, when the position of the wafer W with respect to the probe card 20 is changed, the contact probe 25 already in contact with one electrode pad or one solder bump needs to be brought into contact with another electrode pad or solder bump. Applied.
- each contact probe 25 of the probe card 20 is in contact with one electrode pad or one solder bump in each semiconductor device of the wafer W.
- the transfer stage 18 is moved upward toward the tester 15 to bring the transfer stage 18 into contact with the chuck top 28, and then the evacuation of the space S is stopped to increase the pressure in the space S. At this time, the chuck top 28 is not sucked upward, so that it is separated from the flange 22 and supported by the transfer stage 18 (FIG. 5B).
- the transfer stage 18 is moved below the tester 15 together with the chuck top 28 and the wafer W (FIG. 5C).
- the transfer stage 18 is moved so that the wafer W faces the tester-side camera 16, and the position of the center of the wafer W is confirmed by the tester-side camera 16 (FIG. 6A).
- the controller 17d determines the amount of movement of the transfer stage 18 based on the confirmed position of the center of the wafer W and the distance from one electrode pad to another electrode pad (or from one solder bump to another solder bump). decide.
- the wafer W is vacuum-sucked by the chuck top 28 and the chuck top 28 is vacuum-sucked by the transport stage 18 so that the wafer W and the chuck top 28 are not displaced relative to the transport stage 18 in subsequent processes. .
- the transfer stage 18 is moved together with the wafer W and the chuck top 28 according to the determined movement amount and is again opposed to the tester 15 (FIG. 6B). At this time, other electrode pads and other solder bumps in each semiconductor device of the wafer W face each contact probe 25 of the probe card 20.
- the transfer stage 18 is continuously moved in the same manner as in the process of FIG. 4C.
- the wafer W is brought into contact with the probe card 20, and the space S is evacuated to suck the chuck top 28 upward, and other electrode pads and other solder bumps in each semiconductor device of the wafer W are connected to the probe card 20.
- the contact probes 25 are brought into contact with each other (FIG. 6C). That is, also in this modified example, the chuck top 28 is supported by the transfer stage 18 until the wafer W contacts the probe card 20 even after the chuck top 28 indirectly contacts the bellows 23.
- the chuck top 28 is kept until the wafer W comes into contact with the probe card 20. Is supported by the transfer stage 18, the chuck top 28 and thus the wafer W will not be displaced from the probe card 20 even if a reaction force is received from the bellows 23. That is, in order to bring each contact probe 25 in contact with one electrode pad or one solder bump into contact with another electrode pad or another solder bump, the position of the wafer W is moved with respect to the probe card 20 by the transfer stage 18. When shifting, since the wafer W does not shift with respect to the probe card 20 due to the reaction force from the bellows 23, each contact probe 25 can be brought into contact with other electrode pads and other solder bumps accurately.
- the wafer W and the chuck top 28 are separated from the tester 15 and then the center position of the wafer W is confirmed by the tester-side camera 16, but in FIG. After the contact, the chuck top 28 is vacuum-sucked by the transfer stage 18 and the wafer W is vacuum-sucked by the chuck top 28 so that the wafer W and the chuck top 28 are displaced relative to the transfer stage 18 thereafter. Therefore, it is possible to eliminate the need to confirm the position of the center of the wafer W, and the controller 17d can only adjust the distance from one electrode pad to another electrode pad (or from one solder bump to another solder bump). Based on this, it is possible to determine the amount of movement for the transfer stage 18. In this case, since the process of FIG. 6A described above can be eliminated, the inspection time of the wafer W can be shortened.
- the bellows 23 is made of a metal bellows structure, but it is made of a member that can be in close contact with the pogo frame 19 and the flange 22 and can follow the movement of the flange 22.
- the bellows 23 may be constituted by a ring-shaped sealing member 30 made of a non-metallic material, for example, silicon rubber or resin.
- the wafer mounting method in the above-described embodiment is applied to the wafer inspection apparatus 10 including a plurality of testers 15, it can also be applied to a conventional prober including only one tester.
- An object of the present invention is to supply a storage medium recording software program codes for realizing the functions of the above-described embodiments to a computer (for example, the controller 17d) provided in the wafer inspection apparatus 10, and the CPU of the computer stores the storage medium. It is also achieved by reading out and executing the program code stored in.
- the program code itself read from the storage medium realizes the functions of the above-described embodiment, and the program code and the storage medium storing the program code constitute the present invention.
- Examples of the storage medium for supplying the program code include RAM, NV-RAM, floppy (registered trademark) disk, hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, DVD (DVD). -ROM, DVD-RAM, DVD-RW, DVD + RW) and other optical disks, magnetic tapes, non-volatile memory cards, other ROMs, etc., as long as they can store the program code.
- the program code may be supplied to the computer by downloading from another computer or database (not shown) connected to the Internet, a commercial network, a local area network, or the like.
- the function expansion is performed based on the instruction of the program code. This includes the case where the CPU or the like provided in the board or the function expansion unit performs part or all of the actual processing, and the functions of the above-described embodiments are realized by the processing.
- the form of the program code may be in the form of object code, program code executed by an interpreter, script data supplied to the OS, and the like.
- Wafer inspection device 18 Transfer stage 20 Probe card 22 Flange 23 Bellows 25 Contact probe 28 Chuck top
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- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
[図2]図1における線II−IIに沿う断面図である。
[図3]図1及び図2における搬送ステージ及びテスターの構成を概略的に示す断面図である。
[図4A乃至図4D]本実施の形態に係るウエハ取り付け方法の工程図である。
[図5A乃至図5C]本実施の形態に係るウエハ取り付け方法の変形例の工程図である。
[図6A乃至図6C]本実施の形態に係るウエハ取り付け方法の変形例の工程図である。
[図7]本発明の実施の形態に係るウエハ検査装置の変形例における搬送ステージ及びテスターの構成を概略的に示す断面図である。
[図8A乃至図8C]従来のウエハ検査装置において実行されるウエハ取り付け方法の工程図である。
10 ウエハ検査装置
18 搬送ステージ
20 プローブカード
22 フランジ
23 ベローズ
25 コンタクトプローブ
28 チャックトップ
Claims (5)
- ウエハへ向けて突出する多数の接触端子を有するプローブカードへウエハを取り付けるウエハ取り付け方法であって、
前記ウエハへ向けて延伸する伸縮自在な筒状部材を前記プローブカードを囲むように配置し、
前記ウエハを厚板部材であるチャックトップに載置し、
該チャックトップを移動自在なステージに支持させ、
前記ステージを前記ウエハ及び前記チャックトップとともに前記プローブカードへ向けて移動させて前記チャックトップを前記筒状部材へ当接させ、
前記チャックトップが前記筒状部材へ当接した後も、前記ステージを前記ウエハ及び前記チャックトップとともに前記プローブカードへ向けて移動させて前記ウエハを前記プローブカードへ当接させることを特徴とするウエハ取り付け方法。 - 前記ウエハが前記プローブカードへ当接した後、前記チャックトップ、前記筒状部材及び前記プローブカードで囲まれる空間を真空引きすることを特徴とする請求項1記載のウエハ取り付け方法。
- 前記空間が真空引きされる際、前記筒状部材が前記チャックトップに付与する反力よりも、前記チャックトップが前記ウエハを前記プローブカードへ押し当てる押力が大きいことを特徴とする請求項1又は2記載のウエハ取り付け方法。
- 少なくとも前記チャックトップが前記筒状部材へ当接した後、前記チャックトップは前記ステージに吸着されることを特徴とする請求項1乃至3のいずれか1項に記載のウエハ取り付け方法。
- ウエハへ向けて突出する多数の接触端子を有するプローブカードと、該プローブカードを囲むように配置されて前記ウエハへ向けて延伸する伸縮自在な筒状部材と、前記ウエハを載置する厚板部材であるチャックトップと、該チャックトップを支持する移動自在なステージとを備えるウエハ検査装置において、
前記チャックトップ、前記筒状部材及び前記プローブカードで囲まれる空間を真空引きする際、前記筒状部材が前記チャックトップに付与する反力よりも、前記チャックトップが前記ウエハを前記プローブカードへ押し当てる押力が大きく設定されることを特徴とするウエハ検査装置。
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