WO2014054121A1 - 半導体装置、半導体装置の製造方法 - Google Patents
半導体装置、半導体装置の製造方法 Download PDFInfo
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Definitions
- the present invention relates to a semiconductor device (for example, an IGBT or a diode) used for high voltage, high current switching and the like, and a method of manufacturing the same.
- a semiconductor device for example, an IGBT or a diode
- Patent Document 1 discloses a method of manufacturing a semiconductor device employing gettering technology. According to this gettering technology, first, gettering sites are formed on the lower surface of a semiconductor wafer (substrate). Thereafter, the substrate is heat treated to capture metal impurities in the substrate at the gettering site. After that, the contaminated layer which is the gettering site which captured the metal impurity is removed. In the method for manufacturing a semiconductor device disclosed in Patent Document 1, these processes are performed a plurality of times.
- the present invention has been made to solve the above-mentioned problems, and a semiconductor capable of removing the metal impurities and the like of the substrate by an easy method and stabilizing the electrical characteristics while showing the inherent performance of the semiconductor device. It aims at providing an apparatus and its manufacturing method.
- a semiconductor device comprises a substrate having a drift layer, a metal wiring formed on the upper surface of the substrate, and an electrode formed on the back surface of the substrate, and the life of carriers in the drift layer.
- the time is characterized by satisfying Formula 1 below.
- the present invention it is possible to remove the metal impurities and the like of the substrate by an easy method and stabilize the electrical characteristics while showing the inherent performance of the semiconductor device.
- FIG. 1 is a plan view of a semiconductor device according to Embodiment 1 of the present invention.
- FIG. 2 is a cross-sectional view taken along line II-II of FIG.
- FIG. 7 is a cross-sectional view showing that an N layer and a base layer are formed on a substrate on which an N ⁇ drift layer of an IGBT is formed. It is sectional drawing which shows having formed the emitter in IGBT. It is sectional drawing which shows having formed the trench in IGBT. It is sectional drawing which shows having filled the trench in IGBT with polysilicon. It is sectional drawing which shows having formed the interlayer film which consists of silicate glass or a TEOS film.
- FIG. 6 is a graph showing the relationship between the on voltage (V CE (sat)) and the breakdown voltage (BV CES ) and the carrier lifetime of the N ⁇ drift layer. It is a graph which shows the relationship between the main junction leak current (J CES ) and the carrier lifetime of the N - drift layer.
- N - is a graph showing the carrier lifetime region where the carrier lifetime dependence is eliminated in V CE (sat) to the thickness of the drift layer. It is a table
- V CE (sat) on voltage
- J CES main junction leak current
- E OFF loss at turn-off
- Vth threshold voltage
- Esc maximum breaking energy
- FIG. 16 shows J C -V CE characteristics of a plurality of semiconductor devices manufactured by the method of manufacturing a semiconductor device according to the first embodiment of the present invention.
- FIG. It is a J C- V CE characteristic of a plurality of semiconductor devices manufactured by a method of manufacturing a semiconductor device of a comparative example.
- J CES- V CES characteristic graph of a plurality of semiconductor devices manufactured by a method of manufacturing a semiconductor device according to the first embodiment of the present invention It is a J CES -V CES characteristic of a plurality of semiconductor devices manufactured by a method of manufacturing a semiconductor device of a comparative example. It is a table
- the V CE (sat) and J CES is a graph showing the annealing time dependence of phosphorus doped polysilicon formed after the annealing step. It is sectional drawing which shows having formed the diffused layer in the board
- FIG. 6 is a cross-sectional view showing that a diffusion layer and an electrode are formed on the lower surface of the N ⁇ drift layer in the diode.
- FIG. 16 is a graph comparing the trade-off characteristics of the on-state voltage (VF) and the loss at turn-off (E REC ) of the diode manufactured by the manufacturing method according to the second embodiment and the diode of the comparative example.
- VF on-state voltage
- E REC loss at turn-off
- FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present invention.
- the semiconductor device 10 has an active region 12 and an edge termination region 14 formed to surround the active region 12.
- FIG. 2 is a cross-sectional view taken along line II-II of FIG.
- An IGBT having a trench structure is formed as a semiconductor device.
- the semiconductor device has an N ⁇ drift layer 20.
- the impurity density of the N ⁇ drift layer 20 is, for example, one of 1.0 ⁇ 10 12 to 1.0 ⁇ 10 15 [cm ⁇ 3 ].
- An N-type buffer layer 22 is formed on the lower surface of the N ⁇ drift layer 20.
- a P-type collector layer 24 is formed on the lower surface of the buffer layer 22.
- An electrode 26 is formed on the lower surface of the collector layer 24.
- An N layer 28 is formed on the top surface of the N ⁇ drift layer 20.
- the N layer 28 has, for example, a peak impurity density of either 1.0 ⁇ 10 15 to 1.0 ⁇ 10 17 [cm ⁇ 3 ] and a depth of either 0.5 to 5.0 [ ⁇ m]. is there.
- a P-type base layer 30 is formed on the top surface of the N layer 28.
- the P base layer 30 has, for example, a peak impurity density of 1.0 ⁇ 10 16 to 1.0 ⁇ 10 18 [cm ⁇ 3 ] and a depth deeper than the N + emitter layer 36 and shallower than the N layer 28.
- a trench 37 is formed in which polysilicon 32 is embedded so as to penetrate the base layer 30 and the N layer 28 in the longitudinal direction. The polysilicon 32 is in contact with the N ⁇ drift layer 20, the N layer 28, the base layer 30 and the N + emitter layer 36 through the gate oxide film 34.
- N-type N + emitter layer is formed on the surface side of the base layer 30 to be in contact with the gate oxide film 34.
- the peak impurity density of the N + emitter layer 36 is, for example, 1.0 ⁇ 10 18 to 1.0 ⁇ 10 21 [cm ⁇ 3 ], and the depth is approximately 0.2 to 1.0 ⁇ m. It is either.
- a P + layer 38 is formed on the upper surface side of the P base layer 30.
- the impurity density of the surface of the P + layer 38 is, for example, one of 1.0 ⁇ 10 18 to 1.0 ⁇ 10 21 [cm ⁇ 3 ].
- a silicide film 39 is formed on the top surfaces of the N + emitter layer 36 and the P + layer 38 (hereinafter, the N + emitter layer 36 and the P + 38 may be referred to as a first diffusion layer). Further, a barrier metal 42 is formed in the polysilicon 32 via the oxide film 32 a and the oxide film 40. A metal wire 44 is formed in contact with the silicide film 39.
- FIG. 3 is a cross-sectional view showing that the N layer 28 and the P base layer 30 are formed on the substrate on which the N ⁇ drift layer 20 is formed.
- the N ⁇ drift layer 20 is subjected to ion implantation and annealing to form an N layer 28 and a P base layer 30.
- FIG. 4 is a cross-sectional view showing the formation of an N + emitter.
- the substrate is subjected to ion implantation and annealing to form a plurality of N + emitter layers 36 on the surface side of the P base layer 30.
- FIG. 5 is a cross-sectional view showing that a trench is formed.
- An oxide film 31 is formed on the upper surface of the substrate and patterned using photolithography. Then, reactive ion etching using plasma is performed on a portion exposed to the opening of the oxide film 31 to form a trench 37. Thereafter, chemical dry etching and sacrificial oxidation processing are performed for the purpose of removing crystal defects and plasma damage layer in the periphery of the trench 37, rounding of the bottom of the trench 37, and flattening of the inner wall of the trench 37.
- the chemical dry etching and the sacrificial oxidation treatment are disclosed, for example, in Japanese Patent Application Laid-Open No. 7-263692.
- a suitable depth of the trench 37 is disclosed, for example, in WO2009-122486.
- FIG. 6 is a cross-sectional view showing that the trench 37 is buried with phosphorus-doped polysilicon 32.
- a gate oxide film 34 is formed on the inner wall of the trench by a thermal oxidation method or a CVD method (see, for example, JP-A-2001-085686). Then, phosphorus-doped polysilicon 32 is formed in contact with the gate oxide film 34 to fill the trench.
- the oxide film 50 is formed on the lower surface of the substrate simultaneously with the formation of the gate oxide film 34, and the polysilicon 52 is formed simultaneously with the formation of the polysilicon 32.
- FIG. 7 is a cross-sectional view showing that oxide film 40 and TEOS film 41 are formed.
- the portion of the polysilicon 32 which has come out of the trench 37 is etched.
- the polysilicon 32 exposed on the upper surface of the substrate and the buried surface of the trench 37 is oxidized or deposited by a thermal oxidation method or a CVD method to form an oxide film 32a.
- a P + layer 38 is formed on the top surface of the substrate.
- an oxide film 40 doped with boron or phosphorus and a TEOS film 41 are formed by the CVD method.
- a TEOS film or silicate glass may be formed as the oxide film 40.
- the TEOS film 54 is formed on the lower surface of the substrate simultaneously with the formation of the oxide film 40 and the TEOS film 41.
- FIG. 8 is a cross-sectional view showing that the N ⁇ drift layer 20 on the lower surface of the substrate is exposed.
- Hydrofluoric acid or a mixed acid e.g., hydrofluoric acid, nitric acid, and a mixed solution of acetic acid
- TEOS film 54 of the lower surface of the substrate using a liquid containing a polysilicon 52, and the oxide film 50 is etched N - drift layer 20 Expose the
- each process to here is collectively called a manufacturing process.
- FIG. 9 is a cross-sectional view showing that impurity-doped polysilicon 60, 62 is formed.
- Impurity-doped polysilicon 60 (hereinafter, impurity-doped polysilicon is referred to as doped polysilicon) is formed in contact with N ⁇ drift layer 20 exposed on the lower surface of the substrate.
- undesired doped polysilicon 62 is also formed on the upper surface of the substrate.
- the doped polysilicon 60, 62 is formed by the LPCVD method.
- As an impurity for doping the doped polysilicon 60, 62 phosphorus, arsenic, antimony or the like is used so that the doped polysilicon 60, 62 becomes an N + layer.
- the impurity density of the doped polysilicon 60, 62 is 1 ⁇ 10 ⁇ 19 [cm ⁇ 3 ] or more.
- the layer thickness of the doped polysilicon 60, 62 is 500 [nm] or more.
- FIG. 10 is a cross-sectional view showing that the gettering layer 64 is formed.
- the temperature of the substrate is heated to any one of 900 ° C. to 1000 ° C. in a nitrogen atmosphere to diffuse the impurities of the doped polysilicon 60 to the lower surface side of the N ⁇ drift layer 20.
- a gettering layer 64 having crystal defects and a high concentration impurity is formed on the lower surface side of the N ⁇ drift layer 20.
- This process is referred to as a pretreatment annealing process.
- the step of forming the doped polysilicon 60 and the pretreatment annealing step are collectively referred to as a gettering layer forming step.
- the gettering layer forming step is a step of forming the gettering layer 64 on the lower surface side of the N ⁇ drift layer 20 exposed to the lower surface of the substrate.
- the surface impurity density of the gettering layer 64 is, for example, any of 1.0 ⁇ 10 19 to 1.0 ⁇ 10 22 [cm ⁇ 3 ].
- the temperature of the substrate is lowered to any of 600 to 700 ° C. at an arbitrary temperature lowering speed, and the temperature is maintained for 4 hours or more.
- This process is called an annealing process.
- the substrate is heated and metal impurities, contaminant atoms, and damage introduced into the N ⁇ drift layer 20 in the manufacturing step are diffused and captured by the gettering layer 64.
- FIG. 11 is a graph showing the impurity density of the substrate after the pretreatment annealing step and the annealing step.
- An impurity is diffused from doped polysilicon 60 to N ⁇ drift layer 20, and gettering layer 64 having an impurity density higher than that of N ⁇ drift layer 20 is formed.
- the maximum value of the impurity density of the gettering layer 64 is about 1 ⁇ 10 20 [cm ⁇ 3 ].
- FIG. 12 is a cross-sectional view showing that the doped polysilicon 62 on the upper surface of the substrate is removed.
- the doped polysilicon (doped polysilicon 62 in FIG. 10) on the upper surface of the substrate is selectively removed using a solution of hydrofluoric acid or mixed acid (eg, mixed solution of hydrofluoric acid / nitric acid / acetic acid).
- FIG. 13 is a cross-sectional view showing that a contact hole is formed.
- the oxide film 40 and the TEOS film 41 are partially etched to expose a portion of the first diffusion layer to the outside, thereby forming a trench exposure portion 70 having a contact hole.
- the portion other than the trench exposed portion 70 is a MOSTr portion 72.
- the purpose of forming contact holes partially in the region where trench 37 filled with polysilicon 32 is formed is effective by using a part of polysilicon 32 as the emitter potential. Reducing the gate width and adjusting the capacitance. Thereby, saturation current density suppression, oscillation suppression at short circuit by capacity control, short circuit tolerance improvement (for details, refer to WO2002-058160 gazette and WO2002-061845 gazette), and low on voltage by the emitter side carrier concentration improvement of the ON state Can be
- FIG. 14 is a cross-sectional view showing formation of a silicide film and the like.
- a silicide film 39 and a barrier metal 42 are formed on the upper surface of the substrate by sputtering and annealing.
- a refractory metal material such as Ti, Pt, Co or W is used as a metal at the time of sputtering.
- a metal wire 44 to which Si is added by about 1 to 3% is formed on the upper surface of the substrate by a sputtering method.
- the material of the metal wiring 44 is, for example, AlSi, AlSiCu, or AlCu.
- Metal interconnection 44 is electrically connected to the first diffusion layer through the contact hole.
- a passivation film is formed in the edge termination region.
- FIG. 15 is a cross-sectional view showing that the gettering layer and the doped polysilicon are removed.
- the gettering layer 64 and the doped polysilicon 60 formed on the lower surface side of the substrate are removed by polishing or etching.
- the process of removing the gettering layer and the like in this manner is referred to as a removal process.
- the portion of the N ⁇ drift layer 20 in contact with the gettering layer may be removed to a desired thickness.
- the thickness of the substrate (N ⁇ drift layer 20) can be made to correspond to the withstand voltage class of the semiconductor device.
- FIG. 16 is a cross-sectional view showing that the buffer layer 22, the collector layer 24, and the electrode 26 of the IGBT are formed.
- a buffer layer 22 is formed on the lower surface of the substrate.
- a P-type collector layer 24 is formed on the lower surface of the buffer layer 22.
- An electrode 26 is formed on the lower surface of the collector layer 24.
- the buffer layer 22 and the collector layer 24 which are diffusion layers formed on the lower surface side of the N ⁇ drift layer 20 are referred to as a second diffusion layer.
- the electrode 26 is formed in contact with the collector layer 24 which is a part of the second diffusion layer.
- the electrode 26 is a portion soldered to a substrate or the like in the module when the semiconductor device is mounted on the module. Therefore, it is preferable to form a low contact resistance by forming the electrode 26 by laminating a plurality of metals.
- the annealing step is performed after the gettering layer 64 is formed.
- the first impurity diffusion layer is formed on the upper surface side of the substrate, the film is formed, and the metal impurities, contaminant atoms, and damage introduced to the N ⁇ drift layer 20 in the manufacturing process of forming the etching process are gettering layers in the annealing process. Captured at 64.
- the damage referred to here is the damage to the Si crystal by the plasma in the plasma etching step and the Si crystal by the thermal stress at the time of thermal annealing.
- the impurity and the crystal defect of the gettering layer 64 become getter sites.
- the crystal defects of the gettering layer 64 include high density dislocations and lattice defects, which capture metal impurities such as heavy metals and contaminant atoms.
- doped polysilicon 60 and N were used to form the gettering layer 64 - the difference in thermal expansion coefficients of the drift layer 20, the doped polysilicon 60 and the N - distortion on the surface and the drift layer 20 is in contact It occurs. This strain also functions as a getter site. By these effects, it is possible to recover the carrier lifetime of the N ⁇ drift layer 20 which is reduced due to external factors in the manufacturing process, the annealing process, and the plasma etching process.
- FIG. 17 is a graph showing the relationship between the on-voltage (V CE (sat)) and the breakdown voltage (BV CES ) of the IGBT and the carrier lifetime of the N ⁇ drift layer 20.
- FIG. 18 is a graph showing the relationship between the main junction leak current (J CES ) and the carrier lifetime of the N ⁇ drift layer.
- FIGS. 17 and 18 show simulation results of a breakdown voltage class 6500 V class IGBT with the layer thickness of the N ⁇ drift layer 20 set to 650 ⁇ m.
- V CE (sat) can be stabilized against some fluctuations in the carrier lifetime.
- the value of BV CES hardly depends on the carrier lifetime.
- J CES can be reduced as the carrier lifetime is longer. The reduction of J CES is effective in suppressing thermal runaway at high temperatures of, for example, 398 K or more. From the above, when the carrier lifetime of the N ⁇ drift layer 20 is approximately 5.0E-04 [s] or more, the carrier lifetime dependency of V CE (sat) can be suppressed, and furthermore, J CES can be suppressed.
- the above simulation was performed on a plurality of IGBTs having various breakdown voltage classes within the breakdown voltage class 600 to 6500 V class. That is, for example, in the case of withstand voltage class 600 [V], the layer thickness of N - drift layer is 60 [ ⁇ m], and in the case of withstand voltage class 6500 [V], the layer thickness of N - drift layer is 6500 [ ⁇ m].
- the simulation was carried out by changing the layer thickness of the N ⁇ drift layer within the range of 60 to 6500 ⁇ m. Then, the carrier lifetime capable of suppressing the carrier lifetime dependency of V CE (sat) was calculated for each layer thickness of the N ⁇ drift layer.
- FIG. 19 is a graph plotting carrier lifetime capable of suppressing the carrier lifetime dependency of V CE (sat).
- V CE (sat) can be stabilized by setting the carrier lifetime to 1.1 ⁇ 10 ⁇ 4 [sec] or more.
- the carrier lifetime in the “device characteristic stabilization region” in FIG. 19 satisfies the following Expression 2.
- Formula 2 is represented by a straight line in FIG.
- the carrier lifetime in the N ⁇ drift layer 20 according to the first embodiment of the present invention satisfies Equation 2 and belongs to the device characteristic stabilization region. Therefore, according to the method of manufacturing a semiconductor device in accordance with the first embodiment of the present invention, it is possible to suppress the variation of the characteristics of the semiconductor device due to the carrier lifetime.
- FIG. 20 is a table showing differences in carrier lifetime depending on the presence or absence of the gettering layer forming step.
- the comparative example of FIG. 20 corresponds to the semiconductor device according to the first embodiment of the present invention only in that the formation of the doped polysilicon 60 and 62 in the steps of FIGS. Different (same below).
- the comparative example and the first embodiment of the present invention there is no difference in the processing contents until "etching of the lower surface of the wafer" corresponding to the step shown in FIG. There is.
- the carrier lifetime after the annealing step is significantly improved in the first embodiment of the present invention, the improvement effect is not seen in the comparative example. Therefore, it can be seen that the carrier lifetime can be improved by gettering of the gettering layer.
- FIG. 21 is a graph showing the doped polysilicon layer thickness dependency of V CE (sat), J CES , and loss at turn-off (E OFF (sat)).
- FIG. 22 shows the doped polysilicon layer thickness dependency of the value ⁇ Vg (break) obtained by subtracting the threshold voltage from the maximum gate voltage necessary to shut off the short circuit state of the IGBT and the maximum breaking energy Esc at the short circuit time.
- ⁇ Vg (break) is calculated by “Vg (break) ⁇ V GE (th)”.
- Vg (break) is the maximum gate voltage (Vg) value required to break the short circuit condition
- V GE (th) is the gate voltage required to form a channel in the MOS channel portion of the IGBT. (Threshold voltage).
- the data of the graphs shown in FIGS. 21 and 21 are obtained for an IGBT having a doped polysilicon impurity density of 1 ⁇ 10 19 cm ⁇ 3 or more and a breakdown voltage class of 4500 V.
- FIG. 23 is a graph showing the impurity density dependency of V CE (sat) and J CES doped polysilicon. This graph relates to a semiconductor device having a withstand voltage class of 4500 V, which is created by forming 500 nm of doped polysilicon. From Figure 23, the impurity concentration of the doped polysilicon can be reduced 1 ⁇ 10- 19 [cm -3] or more to the V CE (sat) and J CES.
- FIG. 24 is a graph comparing the output characteristics of the IGBT manufactured by the method of manufacturing a semiconductor device according to the first embodiment of the present invention and the IGBT of the comparative example.
- a semiconductor device having a withstand voltage class of 4500 V was evaluated.
- N of Comparative Example - carrier lifetime in the drift layer N of the present invention - is shorter than the carrier lifetime in the drift layer, the output characteristic of the comparative example is sleep waveform, and the values which the current density (Jc) is saturated Low. That is, the MOS transistor characteristics of the IGBT are degraded. From FIG. 24, it can be seen that the carrier lifetime of the N ⁇ drift layer has a large effect on the output characteristics, and that the method of manufacturing the semiconductor device of the first embodiment of the present invention can improve the output characteristics.
- FIG. 25 is a graph showing the trade-off characteristics between V CE (sat) and E OFF (sat) which are indexes of the basic performance of the IGBT.
- V CE (sat) is a V CE value at the rated current density in FIG. 24 (“ratedJc” in the figure).
- the breakdown voltage class of the evaluated IGBT is 4500V. From FIG. 25, it can be seen that, in the IGBT of the present invention in which the carrier lifetime is extended, the trade-off characteristics can be significantly improved as compared with the IGBT of the comparative example having a short carrier lifetime.
- FIG. 26 is a graph of output characteristics (J C vs. V CE characteristics) of a plurality of IGBTs manufactured by the method of manufacturing a semiconductor device according to the first embodiment of the present invention. A plurality of IGBTs were formed in one wafer surface.
- FIG. 27 is a graph of the output characteristics of a plurality of IGBTs manufactured by the method of manufacturing an IGBT according to the comparative example.
- the IGBT manufactured by the method of manufacturing a semiconductor device according to the first embodiment of the present invention can improve the variation of the output characteristics, and the characteristics are more stable.
- FIG. 28 is a graph of J CES -V CES characteristics of a plurality of IGBTs manufactured by the method of manufacturing a semiconductor device according to the first embodiment of the present invention. A plurality of IGBTs were formed in one wafer surface.
- FIG. 29 is a graph of J CES -V CES characteristics of a plurality of IGBTs manufactured by the method of manufacturing a semiconductor device of the comparative example. Comparing FIGS. 28 and 29, it can be seen that by using the method of manufacturing a semiconductor device according to the first embodiment of the present invention, it is possible to reduce J CES by one digit and to reduce in-plane variation as compared with the comparative example. . That is, the characteristics of the IGBT are stabilized by the effect of the present invention.
- FIG. 30 is a table showing the correspondence between the electrical characteristics and the manufacturing method in an IGBT of 6500 V in withstand voltage class.
- the additional comparative example in FIG. 30 shows a structure in which the doped polysilicon is formed on the lower surface of the substrate after the structure of FIG. 3 is formed and the annealing step is performed. That is, the additional comparative example indicates a semiconductor device manufactured by performing the gettering layer forming step and the annealing step before completing the “manufacturing step”. It is understood from FIG. 30 that the effect of improving the characteristics is high when the gettering layer forming step and the annealing step are performed after the implementation of the manufacturing process as in the semiconductor manufacturing apparatus of the first embodiment of the present invention. In other words, it is preferable to carry out the gettering layer forming step and the annealing step before forming the contact holes.
- FIG. 31 is a graph showing the annealing time dependency of V CE (sat) and J CES in the annealing step.
- the annealing step was performed by maintaining the substrate temperature at any of 600 to 700 ° C. in a nitrogen atmosphere. From FIG. 31, V CE (sat) and J CES are sufficiently reduced and stabilized at an annealing time of 4 hours or more. That is, in the annealing step, it is preferable to maintain the substrate temperature at any of 600 to 700 ° C. in a nitrogen atmosphere for 4 hours or more.
- N ⁇ drift layer is generally formed by the epitaxial growth method.
- N of if 600V class 50 ⁇ 60 [nm] - forming a drift layer if 6500V class 500 ⁇ 600 [nm] of about N - because it forms a drift layer, N - the need to form a thick drift layer.
- a substrate formed by the FZ method is preferable to use.
- Substrate formed by the FZ method N - because the drift layer thin to a desired thickness, the cost of the substrate does not vary by the breakdown voltage class.
- a substrate formed by the FZ method has a low self-gettering capability (IG: intrinsic gettering), and also has a low effect of known EG (extrinsic gettering). Therefore, when the substrate formed by the FZ method is used for a bipolar semiconductor device such as an IGBT or a diode, the carrier lifetime of the N ⁇ drift layer is reduced.
- the gettering layer captures metal impurities and the like of the N ⁇ drift layer. Then, the semiconductor device can be manufactured on the substrate formed by the FZ method at low cost, and the carrier lifetime of the N ⁇ drift layer can be controlled long, and the loss in the on state can be reduced. Such an effect can be obtained not only in the substrate formed by the FZ method but also in the case of using, for example, an epi wafer.
- a gettering layer forming step is carried out after performing the manufacturing step of forming the emitter, the base and the trench constituting the surface structure of the IGBT and before forming the contact hole.
- the carrier lifetime of the N ⁇ drift layer 20 is lengthened by performing the annealing step.
- the gettering layer formation step and the removal step of removing the doped polysilicon 60 and the gettering layer 64 may be performed immediately after the annealing step.
- the substrate according to the first embodiment of the present invention is formed of silicon, it may be formed of a wide band gap semiconductor having a larger band gap than silicon.
- a wide band gap semiconductor there are, for example, silicon carbide, gallium nitride based material or diamond.
- the conductivity type of each portion of the semiconductor element may be reversed as appropriate.
- FIG. 32 is a cross-sectional view showing that a diffusion layer is formed on a substrate.
- FIG. 32 shows an active region Ra and an edge termination region Re formed so as to surround the active region Ra.
- a substrate on which only the N ⁇ drift layer 100 is formed is prepared.
- the impurity density of the substrate is set in accordance with the withstand voltage class. For example, when the withstand voltage class is any of 600 to 6500 [V], the impurity density of the substrate is any of 1.0 ⁇ 10 12 to 1.0 ⁇ 10 15 [cm ⁇ 3 ].
- a plurality of P layers 102 are formed in the edge termination region Re.
- the P layer 102 is formed by performing ion implantation using the insulating films 104 and 106 formed in advance as a mask and then annealing the substrate.
- the surface concentration of the P layer 102 is, for example, one of 1.0 ⁇ 10 16 to 1.0 ⁇ 10 18 [cm ⁇ 3 ].
- An undesired oxide film 108 is also formed on the lower surface of the substrate.
- FIG. 33 is a cross-sectional view showing that the P anode layer 110 is formed in the active region. Ion implantation and annealing are performed on the active region Ra to form a P anode layer 110.
- the surface concentration of the P anode layer 110 is, for example, any of 1.0 ⁇ 10 16 to 1.0 ⁇ 10 18 [cm ⁇ 3 ].
- the “first diffusion layer” formed on the upper surface side of the substrate is the P layer 102 and the P anode layer 110.
- FIG. 34 is a cross-sectional view showing the formation of an N + layer, a TEOS film, and doped polysilicon.
- An N + layer 120 is formed at the end of the edge termination region Re on the upper surface side of the substrate.
- the surface concentration of the N + layer 120 is, for example, one of 1.0 ⁇ 10 18 to 1.0 ⁇ 10 21 cm ⁇ 3 .
- the depth is, for example, any of 0.2 to 10.0 ⁇ m.
- a TEOS film 122 is formed on the upper surface of the substrate.
- the TEOS film 122 may be configured as the oxide film 40 and the TEOS film 41 of FIG. 7.
- the oxide film 108 on the lower surface of the substrate is removed.
- impurity doped doped polysilicon 130 is formed in contact with N ⁇ drift layer 100 exposed on the lower surface of the substrate.
- doped polysilicon 132 is also formed on the upper surface of the substrate.
- FIG. 35 is a cross-sectional view showing that a gettering layer is formed. Impurities doped polysilicon 130 by heating the substrate N - diffuse to the lower side of the drift layer 100, N - forming a gettering layer 150 having a crystal defect and impurity on the lower surface side of the drift layer 100. This step is the same as the pretreatment annealing step of the first embodiment. Thereafter, an annealing process is performed to capture metal impurities, contaminant atoms, and damage of the N ⁇ drift layer 100 with the gettering layer 150.
- FIG. 36 is a cross-sectional view showing that a metal wire is formed.
- a contact hole for exposing the P layer 102 and the P anode layer 110 is formed on the upper surface of the substrate. That is, the TEOS film 122 is processed as shown in FIG. Thereafter, an aluminum wiring 152 to which about 1 to 3% of Si is added is formed by a sputtering method.
- FIG. 37 is a cross-sectional view showing that the passivation film has been formed and the gettering layer and the doped polysilicon have been removed.
- a passivation film 154 is formed on the upper surface of the substrate.
- the gettering layer 150 and the doped polysilicon 130 formed on the lower surface side of the substrate are removed by polishing or etching.
- the processing content of this process is the same as the removal process of the first embodiment.
- the thickness of the substrate N ⁇ drift layer
- FIG. 38 is a cross-sectional view showing that a diffusion layer and an electrode are formed on the lower surface of the N ⁇ drift layer.
- the N layer 160 is formed on the lower surface side of the N ⁇ drift layer 100.
- the surface concentration of the N layer 160 (the concentration of the lower surface portion of the N layer 160) is, for example, any of 1.0 ⁇ 10 15 to 1.0 ⁇ 10 18 [cm ⁇ 3 ].
- the P layer 162 is formed on the lower surface of the N layer 160.
- the surface concentration of the P layer 162 (the concentration of the lower surface portion of the P layer 162) is, for example, any of 1.0 ⁇ 10 16 to 1.0 ⁇ 10 20 [cm ⁇ 3 ].
- N + layer 164 is formed on part of the P layer 162.
- the surface concentration of the N + layer 164 is, for example, any of 1.0 ⁇ 10 19 to 1.0 ⁇ 10 21 [cm ⁇ 3 ].
- the N layer 160, the P layer 162, and the N + layer 164 are diffusion layers formed by ion implantation and annealing.
- an electrode 166 is formed on the lower surface of the substrate.
- the “second diffusion layer” formed on the lower surface side of the substrate is the N layer 160, the P layer 162, and the N + layer 164. The significance of forming these layers is disclosed in JP-A-2010-283131 and JP-A-2012-9811.
- FIG. 39 is a graph comparing the output characteristics of the diode manufactured by the method of manufacturing a semiconductor device according to the second embodiment of the present invention and the diode of the comparative example.
- the withstand voltage class of the evaluated diode is 3300V. In both the measurement at 298 [K] and the measurement at 398 [K], the diode using the method for manufacturing a semiconductor device according to the second embodiment of the present invention shows better results.
- FIG. 40 compares the trade-off characteristics between the on-state voltage (V F ) and the loss at turn-off (E REC ) of the diode manufactured by the method of manufacturing a semiconductor device according to the second embodiment of the present invention with the diode of the comparative example.
- ON voltage (V F) is that of the V AK when J A is RatedJ A in FIG. 39.
- the diode according to the second embodiment of the present invention has lower V F and higher E REC than the comparative example. Therefore, the diode according to the second embodiment of the present invention can make the carrier lifetime of the N ⁇ drift layer longer than the diode of the comparative example, and can improve the characteristics of the diode.
- the gettering layer forming step and the annealing step in the method for manufacturing a semiconductor device according to a second embodiment of the present invention is carried out after the production process, N - drift layer metal impurities, contamination atom , And damage is preferably captured by the gettering layer.
- the manufacturing process in the case of manufacturing a diode is a process of forming the P anode layer 110 constituting the surface structure of the diode, the insulating films 104 and 106, and the like.
- the semiconductor device according to the second embodiment of the present invention and the method for manufacturing the same can be modified at least as much as the first embodiment.
- FIG. 41 is a cross-sectional view showing a step of forming a gettering layer in the method of manufacturing a semiconductor device according to the third embodiment of the present invention.
- the N ⁇ drift layer 20 exposed on the lower surface of the substrate is heated to form a gettering layer 200 having crystal defects on the lower surface side of the N ⁇ drift layer 20.
- a laser annealing technique using a laser beam emitted from a laser light source 202.
- the power of the laser beam is preferably 4.0 [J / cm 2] or more.
- the wavelength of the laser light is, for example, 500 to 1000 nm.
- gettering layer 200 can be easily formed only by heating the lower surface of N ⁇ drift layer 20.
- FIG. 42 is a table showing differences in carrier lifetime depending on the presence or absence of the gettering layer forming step.
- the carrier lifetime is about the same immediately after the “etching on the lower surface of the wafer”.
- the carrier lifetime is longer in the third embodiment than in the comparative example. The carrier lifetime can be increased because the gettering layer 200 functions as a getter site.
- FIG. 43 is a graph showing the relationship between the power density of laser light and the carrier lifetime ( ⁇ ) of the N ⁇ drift layer 20 when the gettering layer is formed.
- ⁇ indicates the amount of change in ⁇ before and after the laser annealing process and the annealing step. From FIG. 43, it can be seen that by setting the power density of laser annealing to 4 [J / cm 2 ] or more, the effect of improving the carrier lifetime by laser annealing can be stably obtained.
- the semiconductor device and the method of manufacturing the same according to the third embodiment of the present invention can be modified at least as much as the first embodiment.
- the features of the semiconductor device according to each embodiment may be combined as appropriate.
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置の平面図である。半導体装置10は、活性領域12と、活性領域12を囲むように形成されたエッジターミネーション領域14を有している。図2は、図1のII-II線における断面図である。半導体装置としてトレンチ構造のIGBTが形成されている。半導体装置はN-ドリフト層20を有している。N-ドリフト層20の不純物密度は例えば1.0×1012~1.0×1015[cm-3]のいずれかである。
本発明の実施の形態2に係る半導体装置の製造方法は、実施の形態1に係る半導体装置の製造方法をダイオードに応用したものである。以後、本発明の実施の形態2に係る半導体装置の製造方法を説明する。図32は、基板に拡散層を形成したことを示す断面図である。図32には、活性領域Raと、活性領域Raを囲むように形成されたエッジターミネーション領域Reが示されている。まずN-ドリフト層100のみが形成された基板を用意する。基板の不純物密度は耐圧クラスに応じて設定される。例えば耐圧クラスが600~6500[V]のいずれかであれば基板の不純物密度は1.0×1012~1.0×1015[cm-3]のいずれかである。
本発明の実施の形態3に係る半導体装置の製造方法は、実施の形態1に係る半導体装置の製造方法におけるゲッタリング層形成工程の処理内容を変更したものである。図41は、本発明の実施の形態3に係る半導体装置の製造方法におけるゲッタリング層形成工程を示す断面図である。このゲッタリング層形成工程では、基板の下面に露出したN-ドリフト層20を加熱してN-ドリフト層20の下面側に結晶欠陥を有するゲッタリング層200を形成する。N-ドリフト層20の加熱には、レーザー光源202から放射されるレーザー光を用いるレーザーアニーリング技術を利用することが好ましい。レーザー光のパワーは4.0[J/cm2]以上であることが好ましい。レーザー光の波長は例えば500~1000[nm]のいずれかである。
Claims (19)
- 前記基板は、ワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料、又はダイヤモンドであることを特徴とする請求項2に記載の半導体装置。
- ドリフト層を有する基板の上面側に、第1拡散層を形成し、成膜し、エッチング処理を施す製造工程と、
前記基板の下面に露出した前記ドリフト層の下面側にゲッタリング層を形成するゲッタリング層形成工程と、
前記基板を加熱し前記製造工程で前記ドリフト層に導入された金属不純物、汚染原子、及びダメージを前記ゲッタリング層で捕獲するアニール工程と、
前記アニール工程の後に、前記ゲッタリング層を除去する除去工程と、
前記除去工程の後に、前記ドリフト層の下面側に第2拡散層を形成する工程と、
前記第2拡散層と接するように電極を形成する工程とを備えたことを特徴とする半導体装置の製造方法。 - 前記ゲッタリング層形成工程は、
不純物をドープしたドープドポリシリコンを、前記基板の下面に露出した前記ドリフト層と接するように形成する工程と、
前記基板を加熱して前記不純物を前記ドリフト層の下面側へ拡散させ、前記ドリフト層の下面側に結晶欠陥と前記不純物を有するゲッタリング層を形成する前処理アニール工程とを備え、
前記除去工程では、前記ドープドポリシリコンも除去することを特徴とする請求項4に記載の半導体装置の製造方法。 - 前記前処理アニール工程における前記基板の温度は900~1000[℃]のいずれかであることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記ドープドポリシリコンの不純物密度は1×10-19[cm-3]以上であることを特徴とする請求項5又6に記載の半導体装置の製造方法。
- 前記ドープドポリシリコンの層厚は500nm以上であることを特徴とする請求項5乃至7のいずれか1項に記載の半導体装置の製造方法。
- 前記アニール工程の後に、前記基板の上面側において、前記第1拡散層の一部を外部に露出させるコンタクトホールを形成し、前記第1拡散層と電気的に接続されたメタル配線を形成する工程を備えたことを特徴とする請求項4乃至8のいずれか1項に記載の半導体装置の製造方法。
- 前記ゲッタリング層形成工程では、前記基板の下面に露出した前記ドリフト層を加熱して前記ドリフト層の下面側に結晶欠陥を有するゲッタリング層を形成することを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記ゲッタリング層は、前記ドリフト層の下面をレーザー光で加熱して形成することを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記レーザー光のパワーは4.0[J/cm2]以上であることを特徴とする請求項11に記載の半導体装置の製造方法。
- 前記製造工程では、IGBTの表面構造を構成するエミッタ、ベース、及びゲートトレンチを形成することを特徴とする請求項4乃至12のいずれか1項に記載の半導体装置の製造方法。
- 前記製造工程では、ダイオードの表面構造を構成するアノード層、及び絶縁膜を形成することを特徴とする請求項4乃至12のいずれか1項に記載の半導体装置の製造方法。
- 前記アニール工程では、4時間以上前記基板の温度を600~700[℃]のいずれかに維持することを特徴とする請求項4乃至14のいずれか1項に記載の半導体装置の製造方法。
- 前記除去工程では、前記ドリフト層のうち前記ゲッタリング層に接する部分を所望の厚さだけ除去することを特徴とする請求項4乃至15のいずれか1項に記載の半導体装置の製造方法。
- 前記基板はFZ法で形成されたウエハであることを特徴とする請求項4乃至16のいずれか1項に記載の半導体装置の製造方法。
- 前記基板は、ワイドバンドギャップ半導体によって形成されていることを特徴とする請求項4乃至17のいずれか1項に記載の半導体装置の製造方法。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料、又はダイヤモンドであることを特徴とする請求項18に記載の半導体装置の製造方法。
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