WO2014041262A3 - Device for detecting two different colors having improved operation conditions - Google Patents

Device for detecting two different colors having improved operation conditions Download PDF

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Publication number
WO2014041262A3
WO2014041262A3 PCT/FR2013/000245 FR2013000245W WO2014041262A3 WO 2014041262 A3 WO2014041262 A3 WO 2014041262A3 FR 2013000245 W FR2013000245 W FR 2013000245W WO 2014041262 A3 WO2014041262 A3 WO 2014041262A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
different colors
detecting
operation conditions
improved operation
Prior art date
Application number
PCT/FR2013/000245
Other languages
French (fr)
Other versions
WO2014041262A2 (en
Inventor
Fabien Chabuel
Laurent Rubaldo
Original Assignee
Société Française De Détecteurs Infrarouges - Sofradir
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Société Française De Détecteurs Infrarouges - Sofradir filed Critical Société Française De Détecteurs Infrarouges - Sofradir
Publication of WO2014041262A2 publication Critical patent/WO2014041262A2/en
Publication of WO2014041262A3 publication Critical patent/WO2014041262A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

According to the invention, the substrate (3) sequentially comprises a first semiconductor layer (5) having a first band gap energy, a buffer semiconductor layer (6) a second semiconductor layer (7) having a second band gap energy different from the first band gap energy. Two photo-detectors (1, 2) sensitive to two different colors are respectively formed by means of the first and second semiconductor layers (5, 7). The first semiconductor layer (5) comprises two main opposite surfaces. The first main surface is covered by the second semiconductor layer (7). The second main surface is covered or not by a passivation film (4) having a thickness equal to or lower than 3 μm.
PCT/FR2013/000245 2012-09-17 2013-09-17 Device for detecting two different colors having improved operation conditions WO2014041262A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1202466A FR2995726B1 (en) 2012-09-17 2012-09-17 DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS
FR1202466 2012-09-17

Publications (2)

Publication Number Publication Date
WO2014041262A2 WO2014041262A2 (en) 2014-03-20
WO2014041262A3 true WO2014041262A3 (en) 2014-11-13

Family

ID=47624129

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2013/000245 WO2014041262A2 (en) 2012-09-17 2013-09-17 Device for detecting two different colors having improved operation conditions

Country Status (2)

Country Link
FR (1) FR2995726B1 (en)
WO (1) WO2014041262A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581084A (en) * 1995-06-07 1996-12-03 Santa Barbara Research Center Simultaneous two color IR detector having common middle layer metallic contact
US20090321642A1 (en) * 2008-04-30 2009-12-31 Epir Technologies, Inc. Photodetector with dark current reduction

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933706A (en) 1997-05-28 1999-08-03 James; Ralph Method for surface treatment of a cadmium zinc telluride crystal
US6043106A (en) 1997-05-28 2000-03-28 Mescher; Mark J. Method for surface passivation and protection of cadmium zinc telluride crystals
US6034407A (en) 1998-07-31 2000-03-07 Boeing North American, Inc. Multi-spectral planar photodiode infrared radiation detector pixels
US8790533B2 (en) 2010-04-23 2014-07-29 Postech Academy-Industry Foundation Method of etching semiconductor nanocrystals

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581084A (en) * 1995-06-07 1996-12-03 Santa Barbara Research Center Simultaneous two color IR detector having common middle layer metallic contact
US20090321642A1 (en) * 2008-04-30 2009-12-31 Epir Technologies, Inc. Photodetector with dark current reduction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG J ET AL: "The photoresponse of Hg0.722Cd0.278Te infrared photodiodes with a heavily doped n Region", INFRARED MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2010 35TH INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 5 September 2010 (2010-09-05), pages 1 - 2, XP031782556, ISBN: 978-1-4244-6655-9 *

Also Published As

Publication number Publication date
WO2014041262A2 (en) 2014-03-20
FR2995726A1 (en) 2014-03-21
FR2995726B1 (en) 2014-10-17

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