FR2995726B1 - DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS - Google Patents

DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS

Info

Publication number
FR2995726B1
FR2995726B1 FR1202466A FR1202466A FR2995726B1 FR 2995726 B1 FR2995726 B1 FR 2995726B1 FR 1202466 A FR1202466 A FR 1202466A FR 1202466 A FR1202466 A FR 1202466A FR 2995726 B1 FR2995726 B1 FR 2995726B1
Authority
FR
France
Prior art keywords
detection
operating conditions
different colors
improved operating
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1202466A
Other languages
French (fr)
Other versions
FR2995726A1 (en
Inventor
Fabien Chabuel
Laurent Rubaldo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lynred SAS
Original Assignee
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS filed Critical Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority to FR1202466A priority Critical patent/FR2995726B1/en
Priority to PCT/FR2013/000245 priority patent/WO2014041262A2/en
Publication of FR2995726A1 publication Critical patent/FR2995726A1/en
Application granted granted Critical
Publication of FR2995726B1 publication Critical patent/FR2995726B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR1202466A 2012-09-17 2012-09-17 DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS Active FR2995726B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1202466A FR2995726B1 (en) 2012-09-17 2012-09-17 DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS
PCT/FR2013/000245 WO2014041262A2 (en) 2012-09-17 2013-09-17 Device for detecting two different colors having improved operation conditions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1202466A FR2995726B1 (en) 2012-09-17 2012-09-17 DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS

Publications (2)

Publication Number Publication Date
FR2995726A1 FR2995726A1 (en) 2014-03-21
FR2995726B1 true FR2995726B1 (en) 2014-10-17

Family

ID=47624129

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1202466A Active FR2995726B1 (en) 2012-09-17 2012-09-17 DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS

Country Status (2)

Country Link
FR (1) FR2995726B1 (en)
WO (1) WO2014041262A2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581084A (en) * 1995-06-07 1996-12-03 Santa Barbara Research Center Simultaneous two color IR detector having common middle layer metallic contact
US5933706A (en) 1997-05-28 1999-08-03 James; Ralph Method for surface treatment of a cadmium zinc telluride crystal
US6043106A (en) 1997-05-28 2000-03-28 Mescher; Mark J. Method for surface passivation and protection of cadmium zinc telluride crystals
US6034407A (en) 1998-07-31 2000-03-07 Boeing North American, Inc. Multi-spectral planar photodiode infrared radiation detector pixels
US7820971B2 (en) * 2008-04-30 2010-10-26 Epir Technologies, Inc. Photodetector with dark current reduction
US8790533B2 (en) 2010-04-23 2014-07-29 Postech Academy-Industry Foundation Method of etching semiconductor nanocrystals

Also Published As

Publication number Publication date
WO2014041262A3 (en) 2014-11-13
WO2014041262A2 (en) 2014-03-20
FR2995726A1 (en) 2014-03-21

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