WO2014032457A1 - 一种制备具有抗pid效应的减反射膜的方法 - Google Patents
一种制备具有抗pid效应的减反射膜的方法 Download PDFInfo
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- WO2014032457A1 WO2014032457A1 PCT/CN2013/077564 CN2013077564W WO2014032457A1 WO 2014032457 A1 WO2014032457 A1 WO 2014032457A1 CN 2013077564 W CN2013077564 W CN 2013077564W WO 2014032457 A1 WO2014032457 A1 WO 2014032457A1
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000000694 effects Effects 0.000 title claims abstract description 42
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 116
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000001272 nitrous oxide Substances 0.000 claims abstract description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000000151 deposition Methods 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 41
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 41
- 238000010926 purge Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 22
- 229910021529 ammonia Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 230000005684 electric field Effects 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 17
- 239000010439 graphite Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 14
- 230000009471 action Effects 0.000 claims description 9
- 230000002045 lasting effect Effects 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract 8
- 238000007664 blowing Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 48
- 239000010410 layer Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 241000112598 Pseudoblennius percoides Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- An antireflection film having anti-static effect having anti-static effect
- the present invention relates to the field of production and processing technology of solar cells, and more particularly to a method of preparing an antireflection film having an anti-PCR effect.
- a solar cell is an energy-converting photovoltaic element that converts light energy into electrical energy under the illumination of sunlight to achieve photovoltaic power generation.
- An anti-reflection film is deposited on the surface of the solar cell to reduce the reflection of light on the surface of the battery, thereby effectively improving the photoelectric conversion efficiency of the battery.
- the anti-reflection film can also surface passivate and passivate the solar cell. Therefore, in the selection of anti-reflection film materials should consider these two aspects, the material suitable for optical anti-reflection film of crystalline silicon solar cells is silicon dioxide, silicon oxynitride and other thin film materials.
- PEVCD growth antireflection film is mainly used.
- the principle of PEVCD technology is to use low temperature plasma as energy source, use glow discharge or use another heating element to warm the sample to a predetermined temperature, then pass an appropriate amount of reaction gas, and the gas undergoes a series of chemical reactions and plasma reactions. Thereafter, a solid film is formed on the surface of the sample.
- ammonia gas and silicon germanium are generally used as reaction gases, and a dark blue film is formed after the reaction, wherein the silicon nitride acts as an anti-reflection function, and hydrogen can function as a body passivation.
- the PEVCD coating has high requirements on temperature and vacuum. Because several different gases participate in the reaction, the gas path is complicated, and since the reaction gas is often toxic, flammable and explosive, there is a safety hazard.
- the mechanism for causing such attenuation is various, such as the ion migration phenomenon in the packaging material of the component battery and the material of the upper surface layer and the lower surface layer of the component under the action of the above-mentioned high voltage; the hot current flow occurring in the battery Sub-phenomenon; charge distribution reduces the active layer of the cell; the associated circuit is corroded and so on.
- PID Potential Induced Degradation
- Polarization Polarization
- Electrolytic Corrosion Electrolytic Corrosion
- Electrochemical Corrosion Electrochemical Corrosion
- the degree is related to the degree of humidity; at the same time, the degree of contamination of the surface of the component by conductivity, acidity, alkalinity and ions with ions is also related to the above-mentioned attenuation phenomenon.
- the PID phenomenon of crystalline silicon photovoltaic modules has been observed. Based on the structure of the battery and other components and the design of the components, the PID phenomenon may be in the forward voltage bias of the circuit and the metal grounding frame. Occurs under conditions that may also occur under conditions of reverse bias.
- the related literature states that the leakage current caused by the path of the battery through the packaging material (usually the upper surface of the EVA and glass) and the frame of the component is considered to be the main cause of the PID phenomenon. So far, the mechanism of leakage current formation is actually not very clear.
- the insulation system formed by encapsulating the battery by the encapsulating material is not perfect for the above leakage current, and it is presumed that the metal ion from the soda lime glass is the main load for forming the above leakage current with PID effect. Streaming medium.
- the relevant literature under the actual application conditions, the period after the morning sun rises is often a period of relatively strong PID effect, because the crystalline silicon photovoltaic module has experienced a night after no power generation. There will be condensation (especially the dew in summer and autumn), which will cause the photovoltaic system to withstand the aforementioned system bias voltage for a period of time after the morning sun rises and when the surface is wet. .
- the direction of solving the PID is mainly concentrated on the three levels of the battery chip, the component, and the system power station.
- the silicon wafer resistivity, diffusion resistance, anti-reflection film and other process quality will affect the anti-PID performance of the battery.
- EVA, tempered glass, aluminum frame and other auxiliary materials also affect the potential-induced attenuation.
- the material improvement of this kind of auxiliary material is also an effective way to solve the potential induced attenuation.
- PV modules have been in use for 25 years and are likely to encounter harsher climates.
- the power output of the power station will drop significantly (up to 90% attenuation), seriously jeopardizing the interests of operators and power station investors.
- the technical problem to be solved by the present invention is that in order to further reduce the cost, the anti-reflection film is developed and designed to form an anti-reflection film with anti-PID effect, thereby achieving the most economical and simplest. The most effective solution to the PID effect.
- the first technical solution adopted by the present invention is
- a method of preparing an antireflection film having an anti-PID effect, the antireflection film having a multilayer film structure having a refractive index from high to low on a silicon wafer substrate, and a multilayer film structure having a refractive index from high to low includes the following steps:
- the temperature is 450 ° C
- the input ammonia gas flow is 2000_2200sccm
- the input silicon germanium flow rate is 7000_8500sccm
- the input nitrous oxide flow rate is 2-3. 4slm
- the low pressure state inside the furnace tube the pressure is 1700mTorr
- the RF power between the graphite boat plates in the furnace tube is 4300 watts for 3-5 minutes. Under the action of the electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma, and the plasma has strong chemical activity, and is adsorbed on the substrate to form a dielectric film layer;
- Nitrogen purge cooling temperature is 420 °C, nitrogen flow rate is 6_12 slm, pressure is 1 OOOOmTorr, and purge time is 5-8 minutes.
- the invention also provides a method comprising a plurality of deposition steps, as follows:
- the method for fabricating a film structure includes the following steps:
- the temperature inside the furnace tube is 420 ° C
- the flow rate of the input ammonia gas is 0.1-0.5 slm
- the flow rate of silicon germanium is 180 sccm-200 sccm
- the flow rate of nitrous oxide is 3.5-4.1 slm
- the pressure is 100000 Torr
- the radio frequency power of graphite boat board is 4300 watts, and the duration is 0.3-0.5 minutes;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 6-10 slm, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- the above step (5) specifically includes: (51)-sub-deposition, the temperature inside the furnace tube is 450 ° C, the flow rate of the input ammonia gas is 2000-2200 sccm, the flow rate of silicon germanium is 7000-7500 sccm, and the flow rate of nitrous oxide is 2- 2.4slm, pressure is 1700mTorr, the RF power of the graphite boat in the furnace tube is 4300 watts, and the duration is 13 minutes. Under this electric field, glow discharge is generated in the furnace tube, and the input process gas is collided by electrons to form plasma, plasma.
- the body has strong chemical activity and forms a dielectric film layer after being adsorbed on the silicon wafer; (52) secondary deposition, the temperature inside the furnace tube is 450 ° C, the flow rate of the input ammonia gas is 2200-2500 sccm, and the flow rate of silicon germanium is 7000- 7400sccm, nitrous oxide flow rate is 2-2.4slm, pressure is 1700mTorr, RF power is 4300 watts, duration is 5 minutes. Under this electric field, glow discharge is generated in the furnace tube, and the input process gas is formed by electron collision.
- Plasma plasma has strong chemical activity, adsorbed on the silicon wafer to form another dielectric film layer;
- the temperature inside the furnace tube is 45 0 °C
- the input ammonia flow rate is 2500-2700sccm
- the silicon germanium flow rate is 7000-7400sccm
- the nitrous oxide flow rate is 2-2.4slm
- the pressure is 1700mTorr
- the RF power is 4300 watts
- the duration is 2 minutes.
- a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma, and the plasma has strong chemical activity, and is adsorbed on the substrate to form a dielectric film layer;
- the ammonia gas flow rate in step (51) is 2100 sccm, the silicon germanium flow rate is 7500 sccm, and the nitrous oxide flow rate is 2.4 slm.
- the ammonia gas flow rate in step (52) is 2300 sccm, the silicon germanium flow rate is 7400 sccm, and the nitrous oxide flow rate is 2.4 slm.
- the ammonia gas flow rate is 2600 sccm, the silicon germanium flow rate is 7300 sccm, and the nitrous oxide flow rate is 2.4 slm.
- the flow rate of nitrous oxide in step (2) was 4.4 slm.
- the ammonia gas is 0.5 slm
- silicon germanium is 200 sccm
- the nitrogen flow rate is 10 slm
- the purge time is 5 minutes.
- the three-layer anti-reflection film is deposited by a tubular PECVD system, and the frequency of the discharge frequency of 40 kHz is superior to the general 250 kHz and 400 kHz devices for electrical control, deposition stability and the like.
- a pulsed intermittent low frequency field is used to reduce surface bombardment.
- Figure 1 is a cross-sectional structural view of a silicon anti-static anti-reflection film obtained by a production method according to the present invention.
- Figure 2 is a graph showing power attenuation comparisons of the components of the seven sets of examples and the conventional process cell according to the present invention under the above-described resistance-induced attenuation measurement conditions.
- Reference numeral 1 denotes a p-type silicon substrate
- Reference numeral 2 denotes an N-type diffusion junction region
- Reference numeral 3 denotes a first layer of silicon oxynitride anti-reflection film
- Reference numeral 4 denotes a second layer of silicon oxynitride anti-reflection film
- Reference numeral 5 denotes a third layer of silicon oxynitride anti-reflection film
- the present invention provides a method of preparing an antireflection film having an anti-PCR effect, comprising the following steps:
- temperature is 420 ° C
- ammonia flow rate is 0.5 slm
- silicon germanium flow rate is 200 sccm
- nitrous oxide flow rate is 4.1 slm
- pressure is 1000 airTorr
- RF power is 4300 watts
- duration is 0.3-0.5 minutes;
- the temperature is 450 ° C
- the input ammonia gas flow rate is 2100 sccm
- the input silicon germanium flow rate is 7700 sccm
- the input nitrous oxide flow rate is 2.58 slm
- the low pressure state inside the furnace tube the pressure is 1700 raTorr, and acts on the furnace tube
- the RF power between the graphite boat boards is 4300 watts for 4 minutes. Under the action of the electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma, and the plasma has strong chemical activity, and is formed on the substrate to form a dielectric film layer;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 10 slm, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- the present invention provides a method of preparing an antireflection film having an anti-PCR effect, comprising the following steps:
- temperature is 420 ° C
- ammonia flow rate is O.lslm
- silicon germanium flow rate is 180sccm
- nitrous oxide flow rate is 3.5slm
- pressure is lOOOmTorr
- RF power is 4300 watts
- duration is 0.3-0.5 minutes ;
- the present invention provides a method of preparing an antireflection film having an anti-PCR effect, comprising the following steps:
- temperature is 420 ° C
- ammonia flow rate is 0.7 slm
- silicon germanium flow rate is 200 sccm
- nitrous oxide flow rate is 4.2 slm
- pressure is 1000 airTorr
- RF power is 4300 watts
- duration is 0.3-0.5 minutes;
- the temperature is 450 ° C
- the input ammonia gas flow rate is 2190 sccm
- the input silicon germanium flow rate is 8500 sccm
- the input nitrous oxide flow rate is 3. 4 slm
- the low pressure state inside the furnace tube the pressure is 1700 raTorr, acting in the furnace tube
- the radio frequency power of the graphite boat board is 4,300 watts, and the duration is 4.5 minutes.
- a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma, and the plasma has strong chemical activity, and is adsorbed on the substrate to form a dielectric film layer;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 6 slm, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- the present invention provides a method of preparing an antireflection film having an anti-PCR effect, comprising the following steps:
- the temperature is 450 ° C
- the input ammonia gas flow rate is 2000 sccm
- the input silicon germanium flow rate is 8300 sccm
- the input nitrous oxide flow rate is 3.0 slm
- the low pressure state inside the furnace tube the pressure is 1700 raTorr, and acts on the furnace tube
- the RF power between the graphite boat boards is 4300 watts for 5 minutes. Under the action of the electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma, and the plasma has strong chemical activity, and is formed on the substrate to form a dielectric film layer;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 12 slm, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- the present invention provides a method of preparing an antireflection film having an anti-PCR effect, which is characterized by comprising the following steps:
- temperature is 420 ° C
- ammonia flow rate is 0.5 slm
- silicon germanium flow rate is 200 sccm
- nitrous oxide flow rate is 4.1 slm
- pressure is 1000 airTorr
- RF power is 4300 watts
- duration is 0.3-0.5 minutes;
- the temperature is 450 ° C
- the input ammonia flow rate is 2110 sccm
- the input silicon germanium flow rate is 7335 sccm
- the input nitrous oxide flow rate is 2.
- the low pressure state inside the furnace tube the pressure is 1700 mTorr, acting on the furnace
- the RF power between the graphite boat in the tube is 4300 watts and the duration is 13 minutes. Under this electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided by electrons to form a plasma.
- the plasma has strong chemistry. Active, adsorbed on the substrate to form a dielectric film layer (reference numeral 3 in Figure 1);
- the temperature is 450 ° C
- the input ammonia flow rate is 2610 sccm
- the input silicon germanium flow rate is 7210 sccm
- the input nitrous oxide flow rate is 2.18 slm
- the low pressure state inside the furnace tube the pressure is 1700 mTorr, acting on the furnace
- the RF power between the graphite boat boards in the tube is 4300 watts for 2 minutes. Under the action of the electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma.
- the plasma has strong chemical activity, and is adsorbed on the substrate to form a dielectric film layer (reference numeral 5 in Fig. 1) ) ; ;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 10 slm, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- temperature is 420 ° C
- ammonia flow rate is 0.1
- silicon germanium flow rate is 180 sccm
- nitrous oxide flow rate is 3.5
- pressure is lOOOm Torr
- RF power is 4300 watts
- duration is 0.3-0.5 minutes;
- the temperature is 450 ° C
- the input ammonia flow rate is 2320 sccm
- the input silicon germanium flow rate is 7380 sccm
- the input nitrous oxide flow rate is 2.35 slm
- the low pressure state inside the furnace tube the pressure is 1700 mTorr, acting on the furnace
- the RF power between the graphite boat in the tube is 4300 watts and the duration is 13 minutes. Under this electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided by electrons to form a plasma.
- the plasma has strong chemistry.
- the temperature is 450 ° C
- the input ammonia flow rate is 2330 sccm
- the input silicon germanium flow rate is 7350 sccm
- the input nitrous oxide flow rate is 2.32 slm
- the low pressure state inside the furnace tube the pressure is 1700 mTorr
- the RF power between the graphite boat plates in the furnace tube is 4300 watts for 5 minutes. Under this electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided by electrons to form a plasma.
- the plasma has strong chemistry. Active, adsorbed on the substrate to form a dielectric film layer;
- the temperature is 450 ° C
- the input ammonia flow rate is 2530 sccm
- the input silicon germanium flow rate is 7120 sccm
- the input nitrous oxide flow rate is 2.12 slm
- the low pressure state inside the furnace tube the pressure is 1700 mTorr, acting on the furnace
- the RF power between the graphite boat boards in the tube is 4300 watts for 2 minutes. Under the action of the electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided with electrons to form a plasma, and the plasma has strong chemical activity, and is adsorbed on the substrate to form a dielectric film layer;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 6, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- temperature is 420 ° C
- ammonia flow rate is 0.1
- silicon germanium flow rate is 180 sccm
- nitrous oxide flow rate is 3.5
- pressure is lOOOm Torr
- RF power is 4300 watts
- duration is 0.35 minutes
- the temperature is 450 ° C
- the input ammonia flow rate is 2400 sccm
- the input silicon germanium flow rate is 7270 sccm
- the input nitrous oxide flow rate is 2. 25 slm
- the low pressure state inside the furnace tube the pressure is 1700 mTorr, acting on the furnace
- the RF power between the graphite boat in the tube is 4300 watts and the duration is 13 minutes. Under this electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided by electrons to form a plasma.
- the plasma has strong chemistry. Active, adsorbed on the substrate to form a medium Plasma membrane layer
- the temperature is 450 ° C
- the input ammonia flow rate is 2330 sccm
- the input silicon germanium flow rate is 7350 sccm
- the input nitrous oxide flow rate is 2.32 slm
- the low pressure state inside the furnace tube the pressure is 1700 mTorr
- the RF power between the graphite boat plates in the furnace tube is 4300 watts for 5 minutes. Under this electric field, a glow discharge is generated in the furnace tube, and the input process gas is collided by electrons to form a plasma.
- the plasma has strong chemistry. Active, adsorbed on the substrate to form a dielectric film layer;
- Nitrogen purge cooling temperature is 420 ° C, nitrogen flow rate is 6, pressure is 1000OOm Torr, and purge time is 5-8 minutes.
- the data shows that the resistance-induced attenuation power of the battery assembly prepared in accordance with the present invention can be effectively controlled.
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- Manufacturing & Machinery (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US14/425,255 US9548404B2 (en) | 2012-09-03 | 2013-06-20 | Method for fabricating anti-reflection film with anti-PID effect |
JP2015528844A JP6025985B2 (ja) | 2012-09-03 | 2013-06-20 | アンチpid効果を有する反射防止コーティングの製作方法 |
EP13832787.9A EP2894238B1 (en) | 2012-09-03 | 2013-06-20 | Preparing method of anti-reflection film having anti-pid effect |
Applications Claiming Priority (2)
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CN201210321237.0 | 2012-09-03 | ||
CN201210321237.0A CN102864439B (zh) | 2012-09-03 | 2012-09-03 | 一种制备具有抗pid效应的减反射膜的方法 |
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WO2014032457A1 true WO2014032457A1 (zh) | 2014-03-06 |
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PCT/CN2013/077564 WO2014032457A1 (zh) | 2012-09-03 | 2013-06-20 | 一种制备具有抗pid效应的减反射膜的方法 |
Country Status (5)
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US (1) | US9548404B2 (zh) |
EP (1) | EP2894238B1 (zh) |
JP (1) | JP6025985B2 (zh) |
CN (1) | CN102864439B (zh) |
WO (1) | WO2014032457A1 (zh) |
Cited By (1)
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CN115430652A (zh) * | 2022-09-05 | 2022-12-06 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 一种lpcvd石英舟的饱和清洗方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102864439B (zh) | 2012-09-03 | 2014-04-02 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种制备具有抗pid效应的减反射膜的方法 |
CN105074940B (zh) * | 2013-02-27 | 2017-04-26 | 日本瑞翁株式会社 | 太阳能电池组件及其制造方法 |
BE1020776A5 (nl) | 2013-05-27 | 2014-04-01 | Futech | Werkwijze en inrichting voor het detecteren, regenereren en/of voorkomen van defecten in een zonnepaneelinstallatie. |
CN104538486B (zh) * | 2014-11-19 | 2017-01-25 | 横店集团东磁股份有限公司 | 一种晶硅电池笑气直接生长氧化硅膜的制备工艺 |
CN106024973B (zh) * | 2016-05-31 | 2017-11-24 | 宁夏银星能源光伏发电设备制造有限公司 | 一种抗pid单晶太阳电池镀双层减反射膜工艺 |
CN106299023B (zh) * | 2016-08-26 | 2017-12-22 | 奥特斯维能源(太仓)有限公司 | 一种抗pid太阳能电池返工片的处理方法 |
CN108306612B (zh) | 2017-12-20 | 2019-11-26 | 华为技术有限公司 | 一种光伏电站中的光伏组件衰减修复方法和装置 |
CN109713080A (zh) * | 2018-12-21 | 2019-05-03 | 苏州阿特斯阳光电力科技有限公司 | 光伏组件的抗衰减处理方法 |
CN112071928B (zh) * | 2020-09-11 | 2023-03-24 | 晋能清洁能源科技股份公司 | 一种perc电池片的制备方法 |
CN114709295B (zh) * | 2022-06-06 | 2022-09-02 | 一道新能源科技(衢州)有限公司 | 一种降低perc电池片衰减的方法及装置 |
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- 2013-06-20 EP EP13832787.9A patent/EP2894238B1/en not_active Not-in-force
- 2013-06-20 JP JP2015528844A patent/JP6025985B2/ja not_active Expired - Fee Related
- 2013-06-20 WO PCT/CN2013/077564 patent/WO2014032457A1/zh active Application Filing
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Also Published As
Publication number | Publication date |
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US9548404B2 (en) | 2017-01-17 |
EP2894238A1 (en) | 2015-07-15 |
EP2894238A4 (en) | 2015-09-23 |
JP6025985B2 (ja) | 2016-11-16 |
CN102864439B (zh) | 2014-04-02 |
EP2894238B1 (en) | 2016-09-14 |
US20150221787A1 (en) | 2015-08-06 |
CN102864439A (zh) | 2013-01-09 |
JP2015529852A (ja) | 2015-10-08 |
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